TW201338091A - Substrate carrier, apparatus, and system layout for processing large area substrates, and a method for plasma cleaning therefor - Google Patents

Abstract

Embodiments of the present invention relate to apparatus and methods for cleaning substrate carriers and components in a processing chamber. A processing chamber according to the embodiment of the present invention includes components that are encapsulated, coated or made with materials compatible with cleaning plasma. A substrate carrier according to embodiments of the present invention may be formed by or coated with materials compatible with cleaning plasma. According to the embodiments of the present invention, plasma cleaning may be performed in a processing chamber having one or more substrate carriers without the presence of any substrates to clean the one or more substrate carriers and the chamber components.

Description

Substrate carrier, device, system layout and plasma for processing large-area substrates Cleaning method

Embodiments of the present invention generally relate to an apparatus and method for processing a large area substrate. More particularly, embodiments of the present invention relate to an apparatus and method for cleaning substrate carriers and components in a large area substrate processing chamber.

Processes for flat panel displays and solar panels typically involve depositing a thin film on a large area substrate. The film can be deposited by a chemical vapor deposition process in which a chemical precursor is introduced into a processing chamber, chemically reacted to form a predetermined compound or material, and then deposited in a chemical vapor deposition process. Positioned on the substrate within the processing chamber. A substrate carrier is sometimes used to support a large-area substrate during processing and transfer of a large-area substrate into and out of the processing chamber. In the deposition process, the chemical precursor reacts in addition to the large-area substrate and In addition to forming a film, it is also possible to react and form a film on the substrate carrier or cavity member. Film formation on substrate carriers and cavity components can cause particle contamination. Particle contamination can be reduced by using plasma to clean the cavity components. Conventional large-area substrate carrier carriers, as well as cavity components for supporting and handling large-area substrates, are typically fabricated in stainless steel to achieve structural strength sufficient to carry large-area substrates. However, stainless steel is not compatible with cleaning plasma. Therefore, the substrate carrier and the processing chamber of the conventional large-area substrate need to be manually cleaned by opening the cavity, so that the system down time is prolonged. Therefore, there is a need to clean substrate carriers and cavity components for processing large area substrates.

Embodiments of the present invention relate to a vertical processing system having a cavity component that is compatible with cleaning plasma. Embodiments of the invention are also directed to a substrate carrier that can be cleaned with plasma.

One embodiment of the present invention provides a substrate carrier. The substrate carrier includes a frame for receiving and supporting the substrate therein. The frame body includes a plurality of clamps for fixing the substrate in the frame. The substrate carrier also includes an upper rail attached to the frame. The upper rail includes a magnetizable material, and the outer side surface of the frame and the upper rail system are compatible with the cleaning plasma.

Another embodiment of the present invention provides an apparatus for processing a large area substrate. The device includes a cavity and a plasma source. The cavity defines an interior space. The plasma source is disposed adjacent to the intermediate portion of the internal space and separates the internal space into the first processing region With the second processing area. The device also includes a first linear roller track, a first magnetic track and a first back plate. The first linear roller track is disposed at a lower portion of the first processing area for supporting and transmitting the substrate in a vertical direction; the first magnetic track is disposed at the first The upper portion of the processing area is for guiding the substrate carrier, and the substrate carrier is supported by the first linear roller track and located in a vertical direction; the first back plate is movably disposed in the first processing space. The first backing plate is configured to be attached to the substrate carrier on the first linear roller track to seal the back side of the substrate carrier. The device further includes a second linear roller track, a second magnetic track and a second back plate, wherein the second linear roller track is disposed at a lower portion of the second processing region for supporting and transmitting the substrate carrier in a vertical direction; the second magnetic track And disposed on the upper portion of the second processing area for guiding the substrate carrier, the substrate carrier is located in a vertical direction and supported by the second linear roller track; and the second back plate is movably disposed in the second processing space. The second backing plate is configured to be attached to the substrate carrier on the second linear roller track to seal the back side of the substrate carrier.

Another embodiment of the present invention provides a method for processing a large area substrate System layout. The system layout includes the apparatus for processing a large-area substrate, the first load-locking cavity, the second load-locking cavity, the first loading/unloading bracket, and the second loading/unloading bracket disclosed in the foregoing embodiments. The first loading/unloading bracket is movably attached to the first load lock chamber, and the second loading/unloading bracket is movably attached to the second load lock chamber. The first load lock chamber is configured to be capable of loading and unloading the substrate carrier to the first linear roller track of the device, and the second load lock cavity is configured to be capable of loading and unloading the substrate carrier to the second linear roller track of the device.

Another embodiment of the present invention provides a plasma cleaning vehicle law. The method includes receiving, in a processing chamber, a substrate carrier that does not carry a substrate, the processing chamber being configured to process a large area substrate in one or more of the vertical directions; and generating a cleaning plasma in the processing chamber to Clean the substrate carrier and the interior surface of the processing chamber. According to an embodiment of the invention, the surface of the backing plate used to cover the back side of the substrate during deposition may also be cleaned with plasma simultaneously with the inner surface of the processing chamber. The backing plate can be separated from the substrate carrier by a distance during plasma cleaning.

100‧‧‧System layout

102A, 102B‧‧‧Load/Unload Bracket

104A, 104B‧‧‧ load lock chamber

106‧‧‧Processing chamber

108A, 108B, 110A, 110B‧‧‧ slit gate

112‧‧‧ Plasma source

114A, 114B‧‧‧ Processing space

114, 211‧‧‧ internal space

116A, 116B, 118A, 118B, 120A, 120B, 122A, 122B‧‧‧ linear roller track

124A, 124B‧‧‧ arrows

202‧‧‧

204‧‧‧ cavity bottom

206‧‧‧ cavity sidewall

208‧‧‧Antenna

210‧‧‧pipe body

212‧‧‧End cover

214‧‧‧ gas source

216‧‧‧ Plasma source

218‧‧‧Central plane

220‧‧‧Process gas source

222‧‧‧ gas transmission tube

224‧‧‧Substrate support assembly

226‧‧‧Roller

228‧‧‧Substrate carrier

230‧‧‧Substrate

230A‧‧‧ Back side

232‧‧‧ Track

234‧‧‧ Magnet

236, 334‧‧‧ Plasma compatible materials

238, 240‧‧‧ trench

242‧‧‧lower edge

244‧‧‧Upper track

246, 250‧‧‧ mandrel

248, 258‧‧‧ drive mechanism

252‧‧‧Backplane assembly

254‧‧‧ Backplane

256‧‧‧ rod body

302‧‧‧ frame

302A‧‧‧上段

302B‧‧‧ lower section

304‧‧‧Internal opening

306‧‧‧ vertical wall

308‧‧ steps

310‧‧‧Reaction side

312‧‧‧Substrate bearing side

314‧‧‧Connector

316‧‧‧ fixture

318‧‧‧ recess

320‧‧‧Clamp body

322‧‧‧ pivot

324‧‧‧Connected end

325‧‧‧Connecting mat

326‧‧‧Free end

328‧‧ ‧ spring

330‧‧‧ Sealing structure

332‧‧‧Magnetizable core

1 is a plan view showing the layout of a system in accordance with an embodiment of the present invention.

2 is a cross-sectional view of a chemical vapor deposition chamber in accordance with an embodiment of the present invention.

3A to 3F are schematic views of a substrate carrier according to an embodiment of the present invention.

Embodiments of the present invention relate to an apparatus and method for cleaning substrate carriers and components in a processing chamber. In particular, embodiments of the invention pertain to a processing chamber having a cavity component that is compatible with plasma cleaning. Embodiments of the invention are also directed to substrate carriers that are compatible with plasma cleaning operations when the substrate is not loaded. A processing chamber in accordance with embodiments of the present invention can include components that are packaged, coated, or fabricated with a material that is compatible with the cleaning plasma. The substrate carrier according to an embodiment of the present invention may be

1 is a plan view of a system layout 100 in accordance with an embodiment of the present invention. The system layout 100 is configured to process a large area substrate when a large area substrate is placed in a substantially vertical direction. The system layout 100 can be fabricated to handle substrates having a surface area in excess of 90,000 square millimeters (mm ² ).

The system layout 100 includes two loader/unloader carriages 102A, 102B, two load lock chambers 104A, 104B, and a processing chamber 106. The system layout 100 is configured to perform chemical vapor deposition on a large area substrate. The load lock chambers 104A, 104B are used to exchange substrates between the vacuum environment in the process chamber 106 and the load/unload brackets 102A, 102B located in the atmosphere.

The processing chamber 106 includes a plasma source 112 disposed adjacent the processing chamber 106 that divides the interior space of the processing chamber 106 into two symmetric processing volumes 114A, 114B. The processing chamber 106 is configured to receive and process a single substrate in each of the processing spaces 114A, 114B, and to process both substrates simultaneously. The load lock chambers 104A, 104B are coupled to the dual process chambers 106 through slit valve doors 110A, 110B, respectively. Each of the load lock chambers 104A, 104B is configured to load and unload substrates in corresponding processing spaces 114A, 114B. The loading/unloading brackets 102A, 102B are adjacent to the load lock chambers 104A, 104B Dynamically placed, on the opposite side of the processing chamber 106.

Loading/unloading brackets 102A, 102B include linear roller tracks (linear roller track) 116A, 116B for carrying and moving the substrate in and out of the load lock chambers 104A, 104B. Each of the load lock chambers 104A, 104B includes two sets of linear roller tracks 118A, 120A, 118B, 120B, each configured to carry and move a substrate thereon. The two sets of linear roller tracks 118A, 118B enable the load lock chambers 104A, 104B to simultaneously accommodate the incoming substrate and the substrate to be output. Processing chamber 106 includes linear roller tracks 122A, 122B located in respective processing spaces 114A, 114B. The linear roller tracks 122A, 122B adjust the distance of the processed substrate from the plasma source 122 in the direction indicated by the arrows 124A, 124B during the processing process, and align the linear roller tracks 118A, 120A, 118B during loading and unloading. , 120B.

2 is a cross-sectional view of the processing chamber 106 in accordance with an embodiment of the present invention. Surface map. The processing chamber 106 is configured to treat large area substrates by plasma, such as plasma enhanced chemical vapor deposition (PECVD).

The processing chamber 106 includes a chamber top 202 surrounding the interior space 114, a cavity bottom 204, and a cavity sidewall 206. The cavity sidewall 206 can be removably mounted to a frame (not shown) to facilitate removal and opening of the processing chamber 106 while maintaining the cavity. The cavity top 202, the cavity bottom 204, and the cavity sidewall 206 (only one of which is shown) may have an inner surface that is compatible with the plasma cleaning action, wherein the plasma is, for example, NF ₃ plasma. The cavity top 202, the cavity bottom 204, and the cavity sidewall 206 can be made of aluminum. Alternatively, the inner surface of the cavity top 202, the cavity bottom 204, and the cavity sidewall 206 may have an aluminum, Teflon or ceramic coating, wherein the ceramic is, for example, high purity alumina. In an embodiment, the chamber top 202, the cavity bottom 204, and the cavity sidewall 206 may be coated with aluminum having a purity greater than 96%.

The plasma source 112 is coupled to the cavity along a central plane 218 of the processing chamber 106 Top 202 and cavity bottom 204. The plasma source 112 includes a plurality of tubes 210 that are disposed vertically within the interior space 114 through the chamber top 202 and the chamber bottom 204. The plurality of tubes 210 may be made of a solid ceramic on which perforations may be formed to pass an exciting gas. The plurality of antennas 208 can be parallel to one another and evenly distributed along the length of the central plane 218. An antenna 208 is disposed in the internal space 211 of each of the porous tubular bodies 210. A plurality of end caps 212 are coupled to the tubular body 210 outside the processing chamber 106 to seal the internal space 211. Gas source 214 may be coupled through end cap 212 to provide an excitation gas into interior space 211. Each antenna 208 can be coupled to a power source 216 to generate plasma. The power source 216 can be a radio frequency (RF) power source, a very high frequency (VHF) power source, an ultra high frequency (UHF) power source, or a microwave power source that is transmitted to the antenna.

The excitation gas is, for example, argon (Ar), xenon (Xe), and/or krypton (Kr), excited Gas may be supplied to the interior space 211 by a gas source 214, wherein the plasma is generated by a power source applied to the antenna 208. The radical species in the plasma then diffuse through the porous tube 210 into the processing spaces 114A, 114B for processing.

A plurality of gas delivery tubes 222 are disposed in the processing spaces 114A, 114B to deliver one or more processing gases in a process gas source 220. A plurality of gas delivery tubes 222 may be evenly distributed in two planes parallel to the central plane 218 within the processing spaces 114A, 114B. Process gas source 220 can provide a variety of process gases, such as SiH ₄ , Si ₂ H _{6 ,} and NH ₃ for silicon nitride deposition. Process gas source 220 may also provide NF ₃ for plasma cleaning operations. The gas transfer tube 222 can be made of aluminum or ceramic and has a plurality of holes distributed along the length of the gas distribution, so that the process gas can enter the processing spaces 114A, 114B and further diffuse from the plasma source 112. Plasma reaction. The body 210 of the plasma source 112 can be longer than the gas distribution length of the gas delivery tube 222. The gas distribution length is generally greater than the length of the substrate 230. The difference in length of the tube 210, the length of the gas distribution, and the length of the substrate 230 enhances particle performance and also increases the efficiency of gas use.

Processing chamber 106 includes separate processing spaces 114A, 114B Two substrate support assemblies 224. Each substrate support assembly 224 includes a plurality of rollers 226 disposed in a lower portion of the processing space 114A or 114B. A plurality of rollers 226 are linearly arranged to form linear roller tracks 122A, 122B. Each of the substrate support assemblies 224 also includes a magnetic track 232 disposed above the processing space 114A or 114B. The track 232 is aligned with the plurality of rollers 226 to support and transport the substrate carrier 228 in a vertical orientation. The substrate carrier 228 is disposed to be fixed to the support substrate 230.

Each roller 226 can include a lower portion for receiving the substrate carrier 228 The groove 240 of the edge 242. The lower edge 242 of the substrate carrier 228 contacts the roller 226. Each roller 226 is coupled to a shaft 246. The mandrel 246 extends through the cavity sidewall 206 and is coupled to a drive mechanism 248 located outside of the cavity sidewall 206. The driving mechanism 248 is configured to rotate the spindle 246 and the roller 226 to drive The substrate carrier 228 enters and exits the processing chamber 106. The drive mechanism 248 can also extend the mandrel 246 into the interior space 114 and withdraw the mandrel 246 from the interior space 114 to enable the roller 226 to move laterally simultaneously. Lateral movement of the roller 226 can be used to align the roller to the linear roller track 118A/118B or 120A/120B during loading and unloading. Lateral movement of the roller 226 can also be used to adjust the distance of the substrate 230 from the plasma source 112 during processing.

The track 232 includes a downwardly facing groove 238 for receiving the upper rail 244 of the substrate carrier 228. The track 232 can be made by encapsulating one or more magnets 234 into a plasma compatible material 236. One or more of the magnets 234 can be permanent magnets. The plasma compatible material 236 can withstand cleaning plasma such as NF ₃ plasma. The plasma compatible material 236 can be selected from different materials depending on the type of plasma. When NF ₃ plasma is used, the plasma compatible material 236 can be aluminum, Teflon® or ceramic, wherein the ceramic is, for example, high purity alumina (e.g., alumina having a purity greater than about 96%). The plasma compatible material 236 is shaped to form trenches 238 to accommodate the substrate carrier 228. Alternatively, the grooves 238 may be formed by magnets 234 and coated with a plasma compatible material such as aluminum, Teflon or ceramic, wherein the ceramic is, for example, a high purity alumina (e.g., alumina having a purity greater than about 96%). . The track 232 is mounted to one or more of the mandrels 250. The mandrel 250 extends through the cavity sidewall 206 and is coupled to the drive mechanism 248. The drive mechanism 248 can simultaneously extend or contract the spindles 246 and 250 to maintain the track 232 and the roller 226 in the same plane. The upper track 244 of the substrate carrier 228 includes a material that can be magnetized such that the upper track 244 can be received in the track 232 without contact with the track 232 by the repulsive force between the upper track 244 and the magnet 234. . As the upper rail 244 slides into the groove 238, the substrate carrier 228 moves relative to the track 232.

Roller 226, mandrel 246, and mandrel 250 also have an outer surface that is compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma. Roller 226, mandrel 246, and mandrel 250 may be formed from aluminum or ceramic. Alternatively, roller 226, mandrel 246, and mandrel 250 may have a coating of aluminum, Teflon, or ceramic, such as high purity alumina (e.g., alumina having a purity greater than about 96%). For example, the roller 226, the mandrel 246, and the mandrel 250 can be made of stainless steel coated with aluminum, Teflon, or ceramic, such as high purity alumina (eg, alumina having a purity greater than about 96%). ).

The processing chamber 106 also includes a backing plate assembly 252 that is configured to protect The back side 230A of the substrate 230 avoids unwanted deposition of the back side 230A during processing. The backplane assembly 252 includes a backing plate 254 coupled to one or more beams 256 that support the backing plate 254 in a substantially vertical position. The backing plate 254 may be slightly larger than the substrate 230 to be processed to completely cover the back side 230A of the substrate 230. One or more rods 256 extend through the cavity sidewall 206 and are coupled to the drive mechanism 258. The drive mechanism 258 laterally moves the back plate 254 by the telescopic rod body 256. Lateral movement causes the backing plate 254 to move closer to and adhere to the substrate carrier 228 during operation and away from the substrate carrier 228 during loading and unloading.

The backing plate 254 and one or more of the rods 256 have an outer surface that is compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma. The backing plate 254 and the one or more rods 256 can be formed from aluminum or ceramic. Alternatively, the backing plate 254 and the one or more rods 256 may comprise a coating of aluminum, Teflon or ceramic, wherein the ceramic is, for example, a high purity alumina (e.g., alumina having a purity greater than about 96%). For example, the backing plate 254 and the one or more rods 256 can be made of stainless steel coated with aluminum, Teflon or ceramic, such as high purity alumina (eg, alumina having a purity of up to 96%). .

3A-3F illustrate schematic views of a substrate carrier 228 in accordance with an embodiment of the present invention. The substrate carrier 228 is configured to transport and support the large area substrate 230 during processing. The substrate carrier 228 has an outer surface that is compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma such that the substrate carrier 228 can be cleaned with plasma when the substrate is not loaded thereon. The plasma cleaning action removes unwanted deposits formed on the substrate carrier during processing and reduces particle contamination caused by unwanted deposits. In addition, since the substrate carrier 228 can be cleaned by plasma, the substrate carrier 228 is not covered with a shadow frame as is the case with conventional large-area substrates.

FIG. 3A illustrates the base of the substrate loading side 312 of the display frame 302. Schematic representation of the board carrier 228. During operation, the substrate loading side 312 faces away from the processing environment, such as a plasma source and a gas transfer tube. The frame 302 is divided into four sections (one upper section 302A, lower section 302B and two side sections) enclosing a rectangular inner opening 304 located therein. The frame 302 has a step 308 formed on the substrate loading side 312. Step 308 extends from inner opening 304 toward vertical wall 306. A plurality of contact pads 336 can be attached to the frame 302 on the step 308. Contact pad 336 can be made of Teflon. The vertical wall 306 forms a rectangular shape, the size of the rectangular shape is larger than the substrate, and The inner opening 304 is smaller in size than this rectangular shape such that the outer edge of the substrate can be supported on the plurality of contact pads 336 at step 308. When the frame 302 covers the outer edge of the substrate, the inner opening 304 provides a window that exposes the processing area of the substrate. A plurality of clamps 316 are distributed around the frame 302 on the substrate loading side 312. A plurality of clamps 316 are provided to pressurize the substrate toward step 308 to secure the substrate to substrate carrier 228.

The upper rail 244 is attached to the upper section 302A of the frame 302 through a plurality of connectors 314. The upper track 244 includes a material that can be magnetized such that the substrate carrier 228 can be guided by the track.

The lower edge 242 is coupled to the lower segment 302B of the frame 302. The lower edge 242 is configured to contact the processing chamber 106, the load lock chambers 104A, 104B, and the drive rollers of the load/unload brackets 102A, 102B.

The substrate carrier 228 further includes a sealing structure 330 attached to an outer side edge of the frame 302 positioned on the substrate carrying side 312. Sealing structure 330 surrounds vertical wall 306. During operation, the backing plate 254 (eg, the flat backing plate 254) can be in contact with the sealing structure 330 and form a seal on the back side of the substrate that is secured to the substrate carrier 228 to prevent process chemistry from contacting the back side of the substrate.

FIG. 3B is a side cross-sectional view of the substrate carrier 228. As shown in FIG. 3B, the upper rail 244 can include a magnetizable core 332 that is encapsulated in a plasma compatible material 334. The plasma compatible material 334 can comprise aluminum, Teflon or ceramic, wherein the ceramic is, for example, high purity alumina (e.g., alumina having a purity greater than about 96%). FIG. 3C is a schematic diagram showing the reaction side 310 of the frame 302. reaction Side 310 faces the processing environment, such as a plasma source and a gas transfer tube. The reaction side 310 frames the substrate to expose only the area of the internal opening 304. The frame 302 can serve as a shadow frame to prevent the outer edge of the substrate from being processed.

The frame 302, the connector 314, and the lower edge 242 have an outer side surface that is compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma. The frame 302, the connector 314, and the lower edge 242 can be made of aluminum or ceramic. Alternatively, the frame 302, the connector 314, and the lower edge 242 may comprise a coating of aluminum, Teflon or ceramic, wherein the ceramic is, for example, a high purity alumina (e.g., alumina having a purity greater than about 96%). . For example, the frame 302, the connector 314, and the lower edge 242 can be made of stainless steel coated with aluminum, Teflon, or ceramic, such as high purity alumina (eg, oxidation greater than about 96% purity). aluminum).

Figure 3D is a partial view of the substrate carrier 228 showing multiple One of the clamps 316. Figure 3E is a partial cross-sectional view of the substrate carrier 228 showing the clamp 316 securing the substrate 230 to the substrate carrier. Each of the clamps 316 is disposed in a recess 318 formed on the substrate loading side 312 of the frame 302. The clamp 316 includes a clamp body 320 that is rotatable along a pivot 322. The clamp body 320 has a contact end 324 and a free end 326 on the opposite side of the pivot 322. The clamp 316 also includes a spring 328 that is pressurized from the contact end 324 of the clamp body 320 toward the frame 302. The spring 328 provides a pressure to the contact end 324 to urge the substrate 230 toward the frame 302. Contact pads 325 can be attached to contact ends 324 to contact substrate 230. Contact pad 325 can be made of Teflon.

Figure 3E is a partial view of the substrate carrier 228 showing the location A clamp 316 for the substrate loading/unloading position. To load or unload the substrate, an external force F can be applied to the free end 326 of the clamp body 320, such as by a push pin. The clamp body 320 rotates about the pivot 322, and the contact end 324 rotates away from the substrate 230. Substrate 230 can then be released from substrate carrier 228 to load a new substrate.

The clamp body 320 and the pivot 322 can have an outer side surface that is compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma. The clamp body 320 and the pivot 322 can be made of aluminum or ceramic. Alternatively, the clamp body 320 and the pivot 322 may comprise a coating of aluminum, Teflon or ceramic, wherein the ceramic is, for example, a high purity alumina (e.g., alumina having a purity greater than about 96%). For example, the clamp body 320 and the pivot 322 can be made of stainless steel coated with aluminum, ceramic or Teflon.

The spring 328 can also be made of a material compatible with the cleaning plasma, wherein the plasma is, for example, NF ₃ plasma. For example, the spring 328 can be made of a superalloy such as HASTELLOY®.

During operation, the substrate 230 to be processed can be loaded in the load / The substrate carrier 228 on the linear roller tracks 116A, 116B of the carriages 102A, 102B is unloaded. When all of the clamps 316 are pushed toward the loading/unloading position as shown in FIG. 3F, the substrate 230 will be loaded to the substrate carrier 228 by the substrate transport robot and positioned in the step 308 of the substrate carrier 228. on. When the jig body 320 is returned to the initial position, the substrate 230 is fixed in the substrate carrier 228.

Then, the loading/unloading carriages 102A, 102B are moved to roll straight Wheel tracks 116A, 116B align with linear roller tracks in load lock chambers 104A, 104B Road 120A, 120B. The linear roller tracks 118A, 118B are vacant. Substrate carriers 228 pass through slit gates 108A, 108B, respectively, and then into load lock chambers 104A, 104B, which are located on linear roller tracks 120A, 120B. Then, the slit gates 108A, 108B are closed, and the load lock chamber is evacuated to a vacuum state that becomes the processing chamber 106.

Then, the slit gates 110A, 110B are opened. Roller in the processing chamber 226 aligns one of the linear roller tracks 118A, 118B that are hollowed out by the load lock chambers 104A, 104B. Roller 226 then carries the processed substrate from processing chamber 106 to load lock chambers 104A, 104B.

The roller 226 in the processing chamber 106 is then aligned with the load lock chamber 104A, One of the linear roller tracks 120A, 120B in 104B, wherein each of the linear roller tracks 120A, 120B has a substrate 230 fixed to the substrate carrier 228. The two substrates secured to the substrate carrier 228 are then carried by the rollers in the load lock chambers 104A, 104B, and the rollers 226 in the processing chamber 106, into the processing spaces 114A, 114B. The lower edge 242 of the substrate carrier 228 is maintained on the roller 226 and the upper rail 244 of the substrate carrier 228 is received by the track 232. The mandrels 246, 250 are then moved toward the plasma source 112 to position the substrate 230 in the processing position. One or more rods 256 then extend through the cavity sidewalls 206 to attach the backing plate 254 to the substrate carrier 228 to cover the back side 230A of the substrate 230.

Excitation gases (e.g., Ar, Xe, and/or Kr) are supplied to the interior space 211 of the tubular body 210 via a gas source 214, wherein a plasma is generated by a power source supplied to the antenna 208. The radical species in the plasma then diffuse through the tube 210 into the processing spaces 114A, 114B for processing. One or more process gases, such as SiH ₄ , Si ₂ H ₆ and NH _{3 , are} supplied to the processing spaces 114A, 114B through the gas transfer tube 222 and reacted with the plasma to deposit a thin film on the substrate 230, for example Tantalum nitride film.

After the process is completed, one or more of the rods 256 are retracted so that The backing plate 254 is separated from the substrate carrier 228. The roller 226 is then retracted and the substrate carrier 228 is aligned with one of the linear roller tracks 118A, 118B that are hollowed out of the load lock chambers 104A, 104B to unload the substrate.

When the substrate is processed in the processing chamber 106, the slit gate 110A, 110B is off. The load lock chambers 104A, 104B are then pressurized to atmospheric pressure. The slit gates 108A, 108B are opened to unload the substrate carrier 228 having the processed substrate onto the loading/unloading trays 102A, 102B. In the load/unload brackets 102A, 102B, the processed substrate can be removed from the substrate carrier 228 and removed from the system layout 100.

In accordance with an embodiment of the present invention, substrate carrier 228 can then be returned to processing chamber 106 through load lock chambers 104A, 104B without any substrate being loaded on substrate carrier 228. The vacant substrate carrier 228 can be positioned by the roller 226 at a reactive location in the processing chamber 106. An excitation gas, such as Ar, Xe, and/or Kr, is supplied to the interior space 211 of the tubular body 210 via a gas source 214, wherein a plasma is generated by a power source supplied to the antenna 208. The free radicals in the plasma are diffused through the tube 210 into the processing spaces 114A, 114B for processing. A detergent, for example NF _3, supplied through the gas transfer tube 222 to the processing space 114A, 114B and subjected to the cleaning process with the plasma reaction chamber 106 and the substrate 228 having the exposed surface.

In an exemplary cleaning process, the substrate carrier 228 is not in use The condition in which the substrate 230 is placed is loaded into the processing chamber 106. The substrate carrier 228 can be moved to the plasma source 112 to a processing location. The backing plate 254 can be moved toward the plasma source 112 but not the substrate carrier 228 such that the backing plate 254 can be exposed to the cleaning plasma without obscuring the back side of the substrate carrier 228.

When preparing for plasma ignition, the processing chamber 106 is connected Being cleaned. For example, argon can be passed into the processing space 114A, 114B at a flow rate of about 5 SLM (standard liter per minute) for about 5 seconds to complete the cleaning.

Next, an excitation gas (e.g., argon) is used to excite the processing chamber 106. Plasma. Argon may flow from the gas source 214 into the processing chamber 106 for at least 8 seconds at a flow rate of from about 1 SLM to about 10 SLM while applying microwave power to the antenna 208 to excite argon in the processing spaces 114A, 114B.

After the plasma in the processing spaces 114A, 114B is successfully energized, a flow of cleaning gas, such as NF ₃ , can be initiated, but the inflow of argon is still maintained. The flow rate of NF ₃ can be gradually increased until the flow rate is stable.

Once the flow of NF ₃ is stable, the argon inflow can be stopped to initiate a complete plasma cleaning action. The temperature of the processing spaces 114A, 114B can be maintained at 100 ° C during the plasma cleaning operation. The chamber pressure can be between about 20 and about 30 Torr. The flow rate of NF ₃ can be between about 20 SLM and about 30 SLM. The duration of the plasma cleaning action depends on various factors such as the size of the processing chamber 106, the amount of etching required, the flow rate of the cleaning gas, and the chamber pressure.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

228‧‧‧Substrate carrier

242‧‧‧lower edge

244‧‧‧Upper track

302‧‧‧ frame

302A‧‧‧上段

302B‧‧‧ lower section

304‧‧‧Internal opening

306‧‧‧ vertical wall

308‧‧ steps

312‧‧‧Substrate bearing side

314‧‧‧Connector

316‧‧‧ fixture

330‧‧‧ Sealing structure

332‧‧‧Magnetizable core

Claims (20)

A substrate carrier includes: a frame for receiving and supporting a substrate therein, wherein the frame includes a plurality of clamps for fixing the substrate in the frame; and a track attached to the frame The body, wherein the track comprises a magnetizable material, the outer surface of the frame and the track comprise a plasma compatible material. The substrate carrier of claim 1, wherein the frame comprises an upper section, a lower section and two side sections, wherein the upper section, the lower section and the two side sections enclose a rectangular inner opening located therein One side of the frame has a step. The substrate carrier of claim 2, further comprising a plurality of contact pads disposed on the step, the contact pads contacting the substrate during operation. The substrate carrier of claim 2, further comprising a plurality of jigs disposed on the frame, each of the jigs being mounted to press the substrate toward the step. The substrate carrier of claim 2, further comprising a plurality of connectors, the connectors coupling the track to the upper portion of the frame. The substrate carrier of claim 1, wherein the frame comprises a coating of the plasma compatible material. The substrate carrier of claim 1, wherein the magnetizable material of the track is encapsulated in the plasma compatible material. The substrate carrier of claim 1, wherein the plasma is compatible Materials include one of aluminum, ceramic or Teflon. The substrate carrier of claim 2, further comprising a lower edge attached to the lower portion of the frame, the lower edge being shaped to interact with a drive mechanism to move the substrate carrier. The substrate carrier of claim 4, wherein each of the clamps comprises: a pivot disposed on a recess formed in the frame; a clamp body rotatable along the pivot, wherein the clamp The body has a contact end for contacting the substrate; and a spring surrounding the pivot and coupled to the clamp body, wherein the spring presses the contact end of the clamp body toward the step of the frame. The substrate carrier of claim 10, further comprising a contact pad attached to the contact end of the clamp body, wherein the contact pad is made of Teflon. The substrate carrier of claim 10, wherein the spring is made of HSTELLOY®. The substrate carrier of claim 10, wherein the jig body and the pivot are made of stainless steel coated with aluminum, ceramic or Teflon. The substrate carrier of claim 2, further comprising a sealing structure attached to the frame, wherein the sealing structure and the step are located on the same side of the frame. A device for processing a large area substrate, comprising: a cavity defining an internal space; a plasma source disposed adjacent to the intermediate portion of the internal space, and separating the internal space into a first processing region and a second processing region; a first linear roller track disposed at the a lower portion of the first processing region for supporting and transmitting a substrate in a vertical direction; a first magnetic track disposed at an upper portion of the first processing region for guiding the substrate carrier, the substrate carrier being The first linear roller track is supported and disposed in a vertical direction; a first back plate is movably disposed in the first processing space, wherein the first back plate is disposed to be attached to the substrate on the first linear roller track The second linear roller track is disposed at a lower portion of the second processing region for supporting and transmitting a substrate carrier in a vertical direction; a second magnetic track is disposed to seal a back side of the substrate carrier; And disposed on an upper portion of the second processing area for guiding the substrate carrier, the substrate carrier is located in a vertical direction and supported by the second linear roller track; and a second back plate is movable In the second process space, wherein the second backplane configured to be attached to a base located on the second straight line of the chuck roller track, to seal the substrate with a back side of the. The device of claim 15, wherein the first linear roller track and the second linear roller track each comprise a plurality of rollers, the rollers comprising a coating of aluminum, ceramic or Teflon. The device of claim 15, wherein the first backing plate and the second backing plate each comprise a coating of aluminum, ceramic or Teflon. A system layout for processing a large-area substrate includes: a first load-locking cavity; a second load-locking cavity; a first loading/unloading bracket movably attached to the first load-locking cavity; a second loading/unloading bracket movably attached to the second load locking chamber; a pair of processing chambers coupled to the first load locking chamber and the second load locking chamber, wherein the dual processing chamber comprises: a cavity Defining an internal space; a plasma source disposed adjacent to the intermediate portion of the internal space, and separating the internal space into a first processing area and a second processing area; a first linear roller track disposed in the first processing a lower portion of the region for supporting and transmitting a substrate in a vertical direction; a first magnetic track disposed at an upper portion of the first processing region for guiding the substrate carrier, the substrate carrier being the first straight line The roller track is supported and located in a vertical direction; a first back plate is movably disposed in the first processing space, wherein the first back plate is disposed to be attached to the substrate carrier on the first linear roller track To seal the substrate having a back side; a second linear roller track, is provided at a lower portion of the second treatment zone, to support and transport located in a direction perpendicular to a substrate carrier; a second magnetic track disposed on an upper portion of the second processing area for guiding the substrate carrier, the substrate carrier being located in a vertical direction and supported by the second linear roller track; a second back plate, Movably disposed in the second processing space, wherein the second backing plate is disposed to be attached to the substrate carrier on the second linear roller track to seal a back side of the substrate carrier; wherein the first The load lock cavity is configured to be capable of loading and unloading the substrate carrier to the first linear roller track of the dual processing chamber, the second load lock cavity being configured to be capable of loading and unloading the substrate carrier to the second of the dual processing chamber Linear roller track. A plasma cleaning method comprising: receiving a substrate carrier that does not carry a substrate in a processing chamber, the processing chamber being configured to be capable of processing one or more large-area substrates in a vertical direction; and in the processing chamber A cleaning plasma is generated to clean the substrate carrier and the interior surface of the processing chamber. The method of claim 19, wherein the substrate carrier comprises a coating of a plasma compatible material.