TW201329261A - Method for forming antifouling film - Google Patents

Method for forming antifouling film Download PDF

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Publication number
TW201329261A
TW201329261A TW101105038A TW101105038A TW201329261A TW 201329261 A TW201329261 A TW 201329261A TW 101105038 A TW101105038 A TW 101105038A TW 101105038 A TW101105038 A TW 101105038A TW 201329261 A TW201329261 A TW 201329261A
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film
substrate
pressure
antifouling
film forming
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TW101105038A
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Chinese (zh)
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Mitsuhiro Miyauchi
Ichiro Shiono
Shingo Samori
you-song Jiang
Ekisyu Nagae
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Shincron Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided is a method for forming an antifouling film which exhibits abrasion resistance sufficient for practical use. This film-forming method is a method for using a film-forming device (1) that has a pressure control means (vacuum pump (24), pressure detection means (22), controller (52)) which controls the pressure within a vacuum chamber (2), holding a plurality of substrates (101) to be subjected to film formation against a substrate holder (4a) in a manner such that the substrates (101) face deposition sources (34, 36), and then sequentially forming a supporting film and an antifouling film on each of the plurality of substrates (101) while rotating the substrate holder (4a), wherein the antifouling film is formed after adjusting the interior pressure of the vacuum chamber (2); by operating the pressure control means in a manner such that the interior pressure of the vacuum chamber (2) falls within a pressure range determined on the basis of the distance between the deposition source (36) and the substrate (101) held near the axis of rotation of the substrate holder (4a). It is preferable to adjust the interior pressure of the vacuum chamber (2) in a manner such that P satisfies the following relationship, when the distance between the substrate (101) and the deposition source (36) is set to SS (unit is mm), and the antifouling film formation pressure is set to P (unit is Pa): (0.06/SS)<=P<=(50/SS).

Description

防污膜的成膜方法Anti-fouling film forming method

本發明是關於具有可耐實用的耐磨耗性的防污膜的成膜方法。The present invention relates to a film forming method having an antifouling film which is resistant to practical wear resistance.

在玻璃、塑膠等的表面形成深度10~400nm的傷痕而使其具有既定方向的肌理狀的微凹凸面,之後在上述微凹凸面上將既定組成的防污膜成膜,此方法為已知(專利文獻1)。A micro-concave surface having a depth of 10 to 400 nm is formed on the surface of glass, plastic, or the like to have a texture-like shape in a predetermined direction, and then an anti-fouling film having a predetermined composition is formed on the micro-concave surface. This method is known. (Patent Document 1).

【先行技術文獻】[First technical literature] 【專利文獻】[Patent Literature]

【專利文獻1】特開平9-309745號公報[Patent Document 1] JP-A-9-309745

在此類的防污膜的表面附著指紋等的油分時,是以擦拭布等擦去此油分。在引證1的手法中,由於在基板表面以既定深度形成既定方向的肌理狀的傷痕,若使擦拭布等在與傷痕的方向交叉的方向滑動而欲擦去此油分,則容易削去形成於最表層的防污膜,而會遭遇因這樣的磨耗而使防污膜的疏油性消失的問題。特別是在專利文獻1的手法中,在往復滑動試驗中,以在畫布施加0.1kg/cm2左右的輕荷重的狀態進行滑動試驗(同文獻的第0038段),這樣無法說是具有可耐實用的耐磨耗性。When an oil such as a fingerprint is attached to the surface of such an antifouling film, the oil is wiped off with a wipe or the like. In the method of the first aspect, since a texture-like flaw in a predetermined direction is formed at a predetermined depth on the surface of the substrate, if the wiping cloth or the like is slid in a direction intersecting the direction of the flaw and the oil is to be wiped off, it is easy to be cut and formed. The most antifouling film on the surface layer suffers from the problem that the oleophobicity of the antifouling film disappears due to such abrasion. In particular, in the technique of Patent Document 1, in the reciprocating sliding test, the sliding test is performed in a state where a light load of about 0.1 kg/cm 2 is applied to the canvas (paragraph 0038 of the same document), so that it cannot be said that it is resistant. Practical wear resistance.

根據本發明的一個面向,是提供具有可耐實用的耐磨耗性的防污膜的成膜方法。According to one aspect of the present invention, there is provided a film forming method having an antifouling film which is resistant to practical wear resistance.

本案諸位發明人發現藉由將容器內壓力調整為根據真空容器的大小(也就是反應室大小)所決定的最佳範圍內的壓力後開始成膜,而可以形成具有可耐實用的耐磨耗性的防污膜。The inventors of the present invention found that by adjusting the pressure in the container to a pressure within an optimum range determined according to the size of the vacuum vessel (that is, the size of the reaction chamber), film formation can be performed, and the wear resistance can be formed to be practical. Sexual antifouling film.

根據本發明,是提供一種防污膜的成膜方法,其是使用一成膜裝置,其中防污膜的成膜源與輔助膜的成膜源是分別設置在真空容器內的下方,並將基板托座以可繞著鉛直軸自轉的方式配置在上述真空容器內的上方,還具有壓力控制工具來控制上述真空容器內的壓力;在此方法中,使成膜對象物的複數個基板保持在上述基板托座而與上述兩成膜源對向之後,一面使上述基板托座旋轉、一面依序將輔助膜與防污膜在各基板上成膜;其特徵在於使上述壓力控制工具作動而調整上述真空容器的內壓而使上述真空容器的內壓成為根據上述真空容器的大小而決定的壓力範圍之後,將該防污膜成膜。According to the present invention, there is provided a film forming method for an antifouling film, which uses a film forming apparatus in which a film forming source of the antifouling film and a film forming source of the auxiliary film are respectively disposed under the vacuum container, and The substrate holder is disposed above the vacuum container so as to be rotatable about a vertical axis, and has a pressure control tool for controlling the pressure in the vacuum container; in this method, a plurality of substrates of the film formation object are held After the substrate holder is opposed to the two film formation sources, the auxiliary film and the antifouling film are sequentially formed on each of the substrates while rotating the substrate holder; and the pressure control tool is activated. The internal pressure of the vacuum container is adjusted so that the internal pressure of the vacuum container becomes a pressure range determined according to the size of the vacuum container, and then the antifouling film is formed into a film.

在本發明中,以反應室大小為表示參數,設定設於基板托座的自轉軸附近的基板與防污膜的成膜源的距離,調整真空容器的內壓而使其包含於根據此距離而決定的壓力範圍,而可以開始藉由成膜源的成膜。In the present invention, the distance between the substrate in the vicinity of the rotation axis of the substrate holder and the film formation source of the antifouling film is set in accordance with the parameter of the reaction chamber size, and the internal pressure of the vacuum container is adjusted to be included in the distance. The pressure range is determined, and film formation by the film formation source can be started.

在本發明中,將保持於基板托座的自轉軸附近的基板與該防污膜的成膜源的距離設為SS(單位為mm)、將防污膜的成膜壓力設為P(單位為Pa)時,可調整真空容器的內壓而使上述P滿足(0.06/SS)≦P≦(50/SS)的關係。In the present invention, the distance between the substrate held in the vicinity of the rotation axis of the substrate holder and the film formation source of the antifouling film is SS (unit: mm), and the film formation pressure of the antifouling film is set to P (unit) In the case of Pa), the internal pressure of the vacuum vessel can be adjusted so that the above P satisfies the relationship of (0.06/SS) ≦P ≦ (50/SS).

根據本發明,由於使壓力控制工具作動而調整真空容器的內壓而成為根據反應室大小而決定的壓力範圍之後再將該防污膜成膜,可以將此防污膜的耐磨耗性提升至可耐實用的程度。以本發明方法成膜的防污膜,由於是隔著輔助膜而形成於基板上,可期待耐磨耗性能的進一步提升。According to the present invention, since the internal pressure of the vacuum container is adjusted by the pressure control means to become a pressure range determined according to the size of the reaction chamber, the antifouling film is formed into a film, and the abrasion resistance of the antifouling film can be improved. To the extent that it is practical. The antifouling film formed by the method of the present invention is formed on the substrate via the auxiliary film, and further improvement in wear resistance can be expected.

【用以實施發明的最佳形態】[Best form for implementing the invention]

以下,根據圖式來說明本發明的實施例。Hereinafter, embodiments of the present invention will be described based on the drawings.

<成膜裝置的構成例><Configuration Example of Film Forming Apparatus>

首先,說明可實現上述發明方法的成膜裝置的一例。如第1圖所示,作為可實現上述發明方法的一例的成膜裝置1,是包含縱向圓筒狀的真空容器2。First, an example of a film forming apparatus that can realize the above-described method of the invention will be described. As shown in Fig. 1, the film forming apparatus 1 which is an example of the above-described method of the invention is a vacuum vessel 2 including a longitudinal cylindrical shape.

在真空容器2的側壁部下端附近,設有排氣用的排氣口(省略圖示)。此排氣口連接管路23的一端,管路23的另一端則連接真空泵24。藉由來自控制器52的指令使真空泵24作動,經由管路23將容器2內的真空度(壓力)減壓。在真空容器2,是設有檢測容器2內的壓力之壓力檢測工具22(壓力計等)。藉由壓力檢測工具22而檢測的容器內壓力的資訊則逐次輸出至控制器52。若控制器52判斷容器內壓力達到既定值,則保持此狀態(每個成膜步驟的成膜壓力不同時,則保持在各自適當的壓力範圍)。真空泵24、壓力檢測工具22及控制器52是相當於本發明的「壓力控制工具」。An exhaust port (not shown) for exhausting is provided in the vicinity of the lower end of the side wall portion of the vacuum container 2. The exhaust port is connected to one end of the line 23, and the other end of the line 23 is connected to the vacuum pump 24. The vacuum pump 24 is actuated by an instruction from the controller 52 to decompress the degree of vacuum (pressure) in the container 2 via the line 23. The vacuum container 2 is provided with a pressure detecting tool 22 (pressure gauge or the like) that detects the pressure in the container 2. The information of the pressure in the container detected by the pressure detecting means 22 is sequentially output to the controller 52. If the controller 52 judges that the pressure in the container reaches a predetermined value, it maintains this state (when the film forming pressure of each film forming step is different, it is maintained at a respective appropriate pressure range). The vacuum pump 24, the pressure detecting tool 22, and the controller 52 are "pressure control tools" corresponding to the present invention.

另外,亦可以在例如自動壓力控制閥(auto pressure controller;APC)等的壓力控制部(省略圖示)的監視之下,藉由經流量控制器(mass flow controller;MFC)等的流量調整部(省略圖示)將氬等的氣體導入容器2內來控制容器2內的壓力。此時,泵24、壓力檢測工具22、自動壓力控制閥、流量控制器、壓力檢測工具22及控制器52是相當於壓力控制工具。另外,亦可以是藉由在連接容器2的排氣口與泵24的管路23的中途設置閥門(省略圖示)而在使泵24作動的狀態調節此閥門的開度而控制容器2內的壓力的構成。此時,泵24、閥門、壓力檢測工具22及控制器52是相當於壓力控制工具。Further, it is also possible to pass a flow rate adjustment unit such as a mass flow controller (MFC) under the supervision of a pressure control unit (not shown) such as an automatic pressure controller (APC). (not shown) A gas such as argon is introduced into the container 2 to control the pressure in the container 2. At this time, the pump 24, the pressure detecting tool 22, the automatic pressure control valve, the flow rate controller, the pressure detecting tool 22, and the controller 52 correspond to a pressure control tool. In addition, a valve (not shown) may be provided in the middle of the line 23 of the pump 24 in the middle of the line 23 of the pump 24, and the opening of the valve 24 may be adjusted to control the opening degree of the valve to control the inside of the container 2. The composition of the pressure. At this time, the pump 24, the valve, the pressure detecting tool 22, and the controller 52 correspond to a pressure control tool.

在真空容器2的內部上方,配置著不鏽鋼製的圓頂狀的基板托座4a。基板托座4a是連接於馬達(未圖示。旋轉工具)的輸出軸(未圖示。旋轉工具),而可繞著其垂直軸旋轉。在此狀態中,在基板托座4a的內面(鉛直方向下側的面)具有凹曲面形狀的基板保持面,在成膜之時,藉由在此基板保持面抵接作為成膜對象的基板101的背面而保持負數個基板101。另外,在基板托座4a的中心設有開口,水晶監視器50則設置在此開口。水晶監視器50是根據在其表面附著蒸鍍物質造成的共振頻率的變化,以膜厚檢測部51檢測形成於各基板101表面的物理膜厚。膜厚的檢測結果則被送至控制器52。A dome-shaped substrate holder 4a made of stainless steel is placed above the inside of the vacuum container 2. The substrate holder 4a is an output shaft (not shown, a rotary tool) that is connected to a motor (not shown), and is rotatable about its vertical axis. In this state, the inner surface of the substrate holder 4a (the surface on the lower side in the vertical direction) has a concave-curved substrate holding surface, and at the time of film formation, the substrate holding surface abuts on the substrate holding surface as a film formation target. A negative number of substrates 101 are held on the back surface of the substrate 101. Further, an opening is provided in the center of the substrate holder 4a, and the crystal monitor 50 is provided at this opening. The crystal monitor 50 detects the physical film thickness formed on the surface of each substrate 101 by the film thickness detecting unit 51 in accordance with the change in the resonance frequency caused by the deposition of the vapor deposition material on the surface. The detection result of the film thickness is sent to the controller 52.

在真空容器2的內部,設置電熱器53而籠罩基板托座4a全體。基板托座4a的溫度是以熱電偶等的溫度感測器54來檢測,其結果被送至控制器52。控制器52是使用來自此溫度感測器54的輸出來控制電熱器53而適當地管理基板101的溫度。Inside the vacuum vessel 2, an electric heater 53 is provided to cover the entire substrate holder 4a. The temperature of the substrate holder 4a is detected by a temperature sensor 54 such as a thermocouple, and the result is sent to the controller 52. The controller 52 controls the electric heater 53 using the output from the temperature sensor 54 to appropriately manage the temperature of the substrate 101.

在真空容器2的內部下方,以拉開間隔的狀態設置蒸發源34、36,蒸發源34、36是使成膜原料附著於保持於基板托座4a的基板101。另外,在蒸發源34、36之間亦配置距離感測器39。另外,在本例中是例示在距離感測器39與蒸發源34之間亦配置向基板101照射正離子的離子槍38,但不一定要配置離子槍38。The evaporation sources 34 and 36 are provided under the inside of the vacuum vessel 2 at intervals, and the evaporation sources 34 and 36 are attached to the substrate 101 held by the substrate holder 4a. Further, a distance sensor 39 is also disposed between the evaporation sources 34, 36. Further, in this example, the ion gun 38 that irradiates the substrate 101 with positive ions is disposed between the distance sensor 39 and the evaporation source 34, but the ion gun 38 is not necessarily disposed.

蒸發源34(輔助膜的成膜源的一例)是具有坩堝(舟皿)34b、電子槍34c與斷續器34a,其中坩堝34b是在上方具有用來承載成膜原料的凹部,電子槍34c是對成膜原料照射電子束(e-)並使其蒸發,斷續器34a是以可開啟關閉的方式被設置在阻斷從坩堝34b到基板101的成膜原料的位置。在坩堝34b承載成膜原料的狀態下,若藉由電子槍電源34d對電子槍34c供應電力而從電子槍34c產生電子束而對成膜原料照射此電子束,成膜原料則受到加熱而蒸發。若在此狀態下開啟斷續器34a,從坩堝34b蒸發的成膜原料則朝向基板101而在真空容器2的內部移動,附著在保持於基板托座4a且旋轉中的基板101的表面。The evaporation source 34 (an example of a film formation source of the auxiliary film) has a crucible (boat) 34b, an electron gun 34c, and an interrupter 34a, wherein the crucible 34b has a concave portion for carrying a film forming material thereon, and the electron gun 34c is a pair. The film forming material irradiates the electron beam (e - ) and evaporates, and the interrupter 34a is disposed at a position to block the film forming material from the crucible 34b to the substrate 101 in a manner that can be opened and closed. In a state where the film material is carried by the crucible 34b, when the electron gun 34c is supplied with electric power by the electron gun power supply 34d, an electron beam is generated from the electron gun 34c, and the electron beam is irradiated to the film forming material, and the film forming material is heated and evaporated. When the interrupter 34a is opened in this state, the film forming material evaporated from the crucible 34b moves toward the substrate 101 inside the vacuum vessel 2, and adheres to the surface of the substrate 101 held by the substrate holder 4a and rotated.

蒸發源36(防污膜的成膜源的一例)在本例中是直接加熱式、間接加熱式等的電阻加熱式的蒸發源,具有坩堝(舟皿)36b與斷續器36a,其中坩堝36b是在上方具有用來承載成膜原料的凹部,斷續器36a是以可開啟關閉的方式被設置在阻斷從坩堝36b到基板101的成膜原料的位置。直接加熱式是在金屬製的舟皿安裝電極而使電流流動,直接加熱金屬製的舟皿而以舟皿本身作為電阻加熱器,而將放入其中的成膜原料加熱。間接加熱式中,舟皿非直接的熱源,是藉由使電流在與舟皿另外設置的加熱裝置例如過渡金屬等的稀有金屬等構成的蒸鍍燈絲流動而作加熱的方式。在坩堝36b承載成膜原料的狀態下,若藉由舟皿本身或與舟皿另外設置的加熱裝置來加熱成膜原料並在此狀態開啟斷續器36a,從坩堝36b蒸發的成膜原料則朝向基板101而在真空容器2的內部移動,附著在保持於基板托座4a且旋轉中的基板101的表面。In the present embodiment, the evaporation source 36 (an example of a film formation source of the antifouling film) is a resistance heating type evaporation source such as a direct heating type or an indirect heating type, and has a crucible (boat) 36b and an interrupter 36a. 36b is a recess having a recess for holding a film forming material thereon, and the interrupter 36a is disposed at a position to block the film forming material from the crucible 36b to the substrate 101 in an openable and closable manner. In the direct heating type, an electrode is attached to a metal boat to flow an electric current, and a metal boat is directly heated, and the boat itself is used as a resistance heater, and the film forming raw material placed therein is heated. In the indirect heating type, the indirect heat source of the boat is heated by flowing a vapor deposition filament composed of a heating means such as a transition metal or the like provided separately with the boat. In a state in which the crucible 36b carries the film forming raw material, if the film forming raw material is heated by the boat itself or a heating device additionally provided with the boat, and the interrupter 36a is opened in this state, the film forming raw material evaporated from the crucible 36b is The substrate 101 is moved toward the inside of the vacuum container 2, and adheres to the surface of the substrate 101 held by the substrate holder 4a and rotated.

離子槍38是離子輔助用的離子源,從反應性氣體(O2等)、稀有氣體(Ar等)的電漿引出帶電的離子(O2+、Ar+),藉由既定的加速電壓作加速而朝基板101射出。在離子槍38的上方以可開啟關閉的方式設置斷續器38a。The ion gun 38 is an ion source for ion assist, and extracts charged ions (O 2+ , Ar + ) from a plasma of a reactive gas (O 2 or the like) or a rare gas (Ar or the like) by a predetermined accelerating voltage. The substrate 101 is emitted while being accelerated. The interrupter 38a is disposed above the ion gun 38 in an openable and closable manner.

從蒸發源34、36向基板101移動的成膜材料,是藉由從離子槍38照射的正離子的撞擊能量,高緻密性且堅固地附著於基板101的表面。此時,基板101是藉由離子束所含的正離子而帶正電。另外,藉由從離子槍38射出的正的離子(例如O2+)累積於基板101,而引起基板101全體帶正電的現象(帶電現象)。一旦發生帶電現象,會引起帶正電的基板101與其他構件之間的異常放電,因放電造成的衝擊會有破壞形成於基板101表面的薄膜(絕緣膜)的情形。另外,由於基板101帶正電使得從離子槍38射出的正的離子造成的撞擊能量降低,亦會有薄膜的緻密性、附著強度等減少的情況。因此在本例中,以電性上中和(中和化)在基板101累積的正的電荷之目的,在真空容器2的例如側壁的中間等設置中和器(neutralizer)(省略圖示)。中和器是在藉由離子槍38的離子束的照射當中,釋放電子(e-)者,從Ar等的稀有氣體引出電子,以加速電壓加速而射出電子。從此處射出的電子中和附著於基板101表面的離子造成的帶電。The film forming material that has moved from the evaporation sources 34 and 36 to the substrate 101 is adhered to the surface of the substrate 101 with high density and high density by the impact energy of the positive ions irradiated from the ion gun 38. At this time, the substrate 101 is positively charged by the positive ions contained in the ion beam. Further, positive ions (for example, O 2+ ) emitted from the ion gun 38 are accumulated on the substrate 101, causing a phenomenon in which the entire substrate 101 is positively charged (charge phenomenon). When the charging phenomenon occurs, abnormal discharge between the positively charged substrate 101 and other members is caused, and the impact due to the discharge may damage the thin film (insulating film) formed on the surface of the substrate 101. Further, since the substrate 101 is positively charged, the impact energy caused by the positive ions emitted from the ion gun 38 is lowered, and the denseness of the film, the adhesion strength, and the like may be reduced. Therefore, in this example, a neutralizer (not shown) is provided in the middle of the vacuum vessel 2, for example, in the middle of the side wall, for the purpose of electrically neutralizing (neutralizing) the positive electric charge accumulated on the substrate 101. . The neutralizer releases electrons (e - ) during irradiation of the ion beam of the ion gun 38, and extracts electrons from a rare gas such as Ar to accelerate the voltage and emit electrons. The electrons emitted therefrom neutralize the charging caused by ions attached to the surface of the substrate 101.

距離感測器39(測距機構的一例),在本例中是以附帶傾斜機構的光學式距離感測器(雷射位移計、三角測距式)而構成。此距離感測器39首先在保持各基板101後,將光照射在繞著鉛直軸旋轉中的基板托座4a的自轉軸附近。接下來,接收此照射光的反射光或散射光,根據這些光線檢測受光位置、受光強度等後,進行既定的處理。接下來將藉由如此處理而檢測之感測器39與實際保持於基板托座4a的自轉軸附近的特定的基板101的距離Sx(x是保持於基板托座4a的自轉軸附近的各基板101的位置編號。單位為mm。以下皆同)之資訊、與此時的相對於鉛直方向之感測器本體的傾斜角θ的資訊輸出至控制器52(請參考第1圖及第2圖)。The distance sensor 39 (an example of a distance measuring mechanism) is configured by an optical distance sensor (laser displacement meter or triangulation type) with a tilt mechanism in this example. The distance sensor 39 firstly irradiates light to the vicinity of the rotation axis of the substrate holder 4a that rotates around the vertical axis after holding the respective substrates 101. Next, the reflected light or the scattered light of the irradiation light is received, and the light receiving position, the received light intensity, and the like are detected based on the light, and then a predetermined process is performed. Next, the distance Sx of the sensor 39 detected by such processing and the specific substrate 101 actually held in the vicinity of the rotation axis of the substrate holder 4a (x is the substrate held in the vicinity of the rotation axis of the substrate holder 4a) The position number of 101. The unit is mm. The information of the same) and the inclination angle θ of the sensor body with respect to the vertical direction at this time are output to the controller 52 (please refer to FIG. 1 and FIG. 2). ).

控制器52是接受從膜厚檢測部51及溫度感測器54的輸出資訊之輸入,並將既定的指令輸出至電熱器53及斷續器34a、36a、38a,此外還接受從距離感測器39的輸出資訊之輸入。控制器52是根據來自距離感測器39的資訊,使壓力控制工具(在本例中為真空泵24與壓力檢測工具22)作動,而具備容器內壓力控制功能將容器2內部的真空度(也就是成膜開始時壓力)調整至適當的狀態。The controller 52 receives input of output information from the film thickness detecting portion 51 and the temperature sensor 54, and outputs a predetermined command to the electric heater 53 and the interrupters 34a, 36a, 38a, and also receives distance sensing. The input of the output information of the device 39. The controller 52 activates the pressure control tool (in this example, the vacuum pump 24 and the pressure detecting tool 22) based on the information from the distance sensor 39, and has a pressure control function inside the container to increase the degree of vacuum inside the container 2 (also That is, the pressure at the start of film formation) is adjusted to an appropriate state.

<防污膜的成膜方法><Method of Film Formation of Antifouling Film>

接下來,說明使用成膜裝置1的成膜方法(本發明方法)的一例。在本例中,是例示以下方法:藉由使用離子槍的離子輔助蒸鍍法(IAD:Ion-beam Assisted Deposition method)在基板101上將輔助膜成膜之後,在此輔助膜之上使用電阻加熱式的真空蒸鍍法將防污膜成膜。Next, an example of a film forming method (method of the present invention) using the film forming apparatus 1 will be described. In this example, the following method is exemplified: after the auxiliary film is formed on the substrate 101 by an Ion-beam Assisted Deposition method (IAD), a resistor is used on the auxiliary film. The antifouling film is formed into a film by a heated vacuum evaporation method.

(1)首先,將成膜原料充填於蒸發源34、36的舟皿。在本例中,是使用氧化矽(SiO2)作為充填於蒸發源34的舟皿之成膜原料(第一成膜原料),亦可使用氧化鋁(Al2O3)等。第一成膜原料的形態並未特別限定,可使用例如團塊(pellet)狀者。(1) First, a film-forming material is filled in a boat of the evaporation sources 34 and 36. In this example, cerium oxide (SiO 2 ) is used as a film forming material (first film forming material) of a boat filled in the evaporation source 34, and alumina (Al 2 O 3 ) or the like can also be used. The form of the first film-forming material is not particularly limited, and for example, a pellet shape can be used.

在本例中,是使用可形成在一個分子中具有至少一個疏水性基及可與氫氧基結合的至少一個反應性基之有機化合物(以下簡稱為「疏水性反應性有機化合物」)構成的薄膜(防污膜)的材料,作為充填於蒸發源36的舟皿之成膜原料(第二成膜原料)。作為疏水性反應性有機化合物者,可列舉出的有含聚氟醚基或聚氟烷基聚氟烷基的含氟有機化合物等。製品例有Canon Optron. Inc.的OF-SR(疏油劑)、OF-110(疏水劑)等。In this example, an organic compound (hereinafter abbreviated as "hydrophobic reactive organic compound") having at least one hydrophobic group and at least one reactive group bonded to a hydroxyl group in one molecule is used. The material of the film (antifouling film) serves as a film forming material (second film forming material) of the boat filled in the evaporation source 36. Examples of the hydrophobic reactive organic compound include a fluorine-containing organic compound containing a polyfluoroether group or a polyfluoroalkyl polyfluoroalkyl group. Examples of the product include OF-SR (oleophobic agent), OF-110 (hydrophobic agent), and the like of Canon Optron. Inc.

第二成膜原料的形態並無特別限定,可使用例如(a)將疏水性反應性有機化合物含浸於多孔質陶瓷者、(b)將疏水性反應性有機化合物含浸於金屬纖維或細線的塊狀物。這些形態可俐落地吸收、蒸發多量的疏水性反應性有機化合物。多孔質陶瓷從處理性的觀點,較好為使用團塊狀。作為金屬纖維或細線,可列舉出例如:鐵、白金、銀、銅等。金屬纖維或細線較好為交織的形狀而可以保持充分的量的疏水性反應性有機化合物者,例如織布狀、不織布狀等者。金屬纖維或細線的塊狀物的空孔率,可按照要保持多少程度的疏水性反應性有機化合物而決定。The form of the second film-forming material is not particularly limited, and for example, (a) a hydrophobic reactive organic compound is impregnated into the porous ceramic, and (b) a hydrophobic reactive organic compound is impregnated into the metal fiber or the thin wire. Shape. These forms absorb and evaporate a large amount of hydrophobic reactive organic compounds. From the viewpoint of handleability, the porous ceramic is preferably in the form of agglomerates. Examples of the metal fiber or the fine wire include iron, platinum, silver, copper, and the like. The metal fiber or the fine wire is preferably an interlaced shape and can retain a sufficient amount of the hydrophobic reactive organic compound, for example, a woven fabric or a non-woven fabric. The porosity of the metal fibers or the bulk of the fine wires can be determined according to how much hydrophobic reactive organic compound is to be maintained.

第二成膜原料使用金屬纖維或細線的塊狀物時,較好為將其保持在一端開放的容器內。保持於容器內的金屬纖維或細線的塊狀物亦可視同為團塊。容器的形狀並無特別限定,可列舉出克努森(Knudsen)型、發散噴嘴(divergent nozzle)型、直筒型、發散筒型、瓶型、絲型等,可根據蒸鍍裝置的樣式作適當選擇。容器開放至少一開端,從開放端蒸發疏水性反應化合物。容器的材質可使用銅、鎢、鉭、鉬、鎳等的金屬、氧化鋁等的陶瓷、碳等,根據蒸鍍裝置、疏水性反應性有機化合物等來作適當選擇。When the second film-forming material is a metal fiber or a thin wire block, it is preferably held in a container having one end open. The mass of metal fibers or fine wires held in the container may also be regarded as agglomerates. The shape of the container is not particularly limited, and examples thereof include a Knudsen type, a divergent nozzle type, a straight type, a divergent tube type, a bottle type, a wire type, etc., and can be appropriately selected according to the style of the vapor deposition apparatus. select. The container is open at least at the beginning and evaporates the hydrophobic reactive compound from the open end. The material of the container may be a metal such as copper, tungsten, tantalum, molybdenum or nickel, a ceramic such as alumina or carbon, or the like, and may be appropriately selected depending on a vapor deposition device, a hydrophobic reactive organic compound or the like.

多孔質陶瓷團塊、以及保持於容器的金屬纖維或細線的塊狀物構成的團塊,在尺寸上均無受到限定。The agglomerates composed of the porous ceramic agglomerates and the lump of metal fibers or fine wires held in the container are not limited in size.

將疏水性反應性有機化合物含浸於多孔質陶瓷或金屬纖維或細線時,首先製作疏水性反應性有機化合物的有機溶劑溶液,藉由浸漬法、滴下法、噴灑法等,將溶液含浸於多孔質陶瓷或金屬纖維或細線後,使有機溶劑揮發。由於疏水性反應性有機化合物具有反應性基(加水分解性基),較好為使用非活性有機溶劑。When the hydrophobic reactive organic compound is impregnated into the porous ceramic or metal fiber or the fine wire, the organic solvent solution of the hydrophobic reactive organic compound is first prepared, and the solution is impregnated into the porous by a dipping method, a dropping method, a spraying method, or the like. After the ceramic or metal fiber or fine wire, the organic solvent is volatilized. Since the hydrophobic reactive organic compound has a reactive group (hydrolyzable group), it is preferred to use an inert organic solvent.

作為非活性有機溶劑者,可列舉出的有氟化脂肪族碳氫化合物類溶劑(全氟正庚烷(perfluoroheptane)、全氟正辛烷(perfluorooctane)等)、氟化芳香族碳氫化合物類溶劑(間二三氟甲苯(m-xylene hexafluoride)、三氟甲苯(benzotrifluoride)等)、氟化醚類溶劑(甲基全氟丁基醚(methyl perfluorobutyl ether)、全氟丁基四氫呋喃(perfluoro(2-butyltetrahydrofuran))等)、氟化烷基胺類溶劑(全氟三丁胺(perfluorotributylamine)、全氟三戊胺(perfluorotripentylamine)等)、碳氫化合物類溶劑(甲苯(toluene)、二甲苯(xylene)等)、酮(ketone)類溶劑(丙酮、甲基乙基酮(methyl ethyl ketone)、甲異丁基酮(methyl isobutyl ketone)等)等。這些有機溶劑可單獨使用、亦可混合二種以上使用。疏水性反應性有機化合物溶液的濃度並無限定,可按照含浸疏水性反應性有機化合物的載體的形態作適當設定。Examples of the inactive organic solvent include fluorinated aliphatic hydrocarbon-based solvents (perfluoroheptane, perfluorooctane, etc.), and fluorinated aromatic hydrocarbons. Solvent (m-xylene hexafluoride, benzotrifluoride, etc.), fluorinated ether solvent (methyl perfluorobutyl ether, perfluorobutyltetrahydrofuran (perfluoro) 2-butyltetrahydrofuran)), fluorinated alkylamine solvents (perfluorotributylamine, perfluorotripentylamine, etc.), hydrocarbon solvents (toluene, xylene) Xylene), etc., a ketone solvent (acetone, methyl ethyl ketone, methyl isobutyl ketone, etc.). These organic solvents may be used singly or in combination of two or more. The concentration of the hydrophobic reactive organic compound solution is not limited, and can be appropriately set in accordance with the form of the carrier impregnated with the hydrophobic reactive organic compound.

另外,第一成膜材料的加熱,並未限定於電子束加熱方式,可使用鹵素燈、夾套加熱器(sheathed heater)、電阻加熱、感應加熱等可充分加熱而使蒸鍍材料氣化的熱源。同樣地,第二成膜材料的加熱並不限定為電阻加熱方式,亦可使用鹵素燈、夾套加熱器、電子束、電漿電子束、感應加熱等。Further, the heating of the first film forming material is not limited to the electron beam heating method, and the vapor deposition material can be vaporized by using a halogen lamp, a sheathed heater, a resistance heating, an induction heating or the like to be sufficiently heated. Heat source. Similarly, the heating of the second film-forming material is not limited to the resistance heating method, and a halogen lamp, a jacket heater, an electron beam, a plasma electron beam, induction heating, or the like can also be used.

(2)接下來,將複數個基板101固定於基板托座4a。基板101可適用塑膠基板(有機玻璃基板)、無機基板(無機玻璃基板)等、其他還有不鏽鋼等的金屬基板,其厚度例如0.1~5mm。另外,作為基板101的一例的無機玻璃基板者,可列舉出例如鈉鈣玻璃(soda-lime glass)(6H~7H)、硼矽酸玻璃(6H~7H)等。另外,無機玻璃基板的括弧內的數字,是以JIS-K5600-5-4為依據的方法測定的鉛筆硬度的值。固定於基板托座4a的複數個基板101,是使用被加工為形狀例如板狀、透鏡狀等者。另外,基板101較好為在固定前或固定後作濕式清洗。(2) Next, a plurality of substrates 101 are fixed to the substrate holder 4a. The substrate 101 can be applied to a plastic substrate (organic glass substrate), an inorganic substrate (inorganic glass substrate), or the like, and other metal substrates such as stainless steel, and have a thickness of, for example, 0.1 to 5 mm. In addition, examples of the inorganic glass substrate as an example of the substrate 101 include soda-lime glass (6H to 7H) and borosilicate glass (6H to 7H). Further, the number in the parentheses of the inorganic glass substrate is the value of the pencil hardness measured by the method based on JIS-K5600-5-4. The plurality of substrates 101 fixed to the substrate holder 4a are processed into shapes such as a plate shape, a lens shape, and the like. Further, the substrate 101 is preferably subjected to wet cleaning before or after fixing.

(3)接下來,將固定複數個基板101的基板托座4a設於真空容器2的內部,之後使泵24作動而開始真空容器2內的排氣。然後,在電熱器53通電並使其發熱,以低速旋轉基板托座4a。藉由此旋轉使基板101的溫度與成膜條件均一化。在本例中,在進行上述步驟的同時,亦開始距離感測器39的作動。藉由在基板托座4a的自轉軸附近有無基板101,感測器的感測光強度的圖形會不同,從這樣的不同的圖形,可以確認在基板托座4a的半徑方向位置有無基板101。(請參考第3圖)(3) Next, the substrate holder 4a for fixing the plurality of substrates 101 is placed inside the vacuum container 2, and then the pump 24 is actuated to start the evacuation in the vacuum container 2. Then, the electric heater 53 is energized and heated to rotate the substrate holder 4a at a low speed. By this rotation, the temperature of the substrate 101 and the film formation conditions are made uniform. In this example, the operation of the distance sensor 39 is also started while the above steps are being performed. By the presence or absence of the substrate 101 in the vicinity of the rotation axis of the substrate holder 4a, the pattern of the sensed light intensity of the sensor is different, and from such a different pattern, the presence or absence of the substrate 101 in the radial direction of the substrate holder 4a can be confirmed. (Please refer to Figure 3)

控制器52是接受來自距離感測器39的輸出(距離Sx與傾斜角θ的各個資訊),根據下式1計算出連接保持於基板托座4a的自轉軸附近的特定的基板101與蒸發源36的直線距離Dx。The controller 52 receives the output from the distance sensor 39 (each information of the distance Sx and the tilt angle θ), and calculates a specific substrate 101 and an evaporation source which are connected and held in the vicinity of the rotation axis of the substrate holder 4a according to the following formula 1. The linear distance of 36 is Dx.

[式1] Dx=√((x0-(Sx‧cosθ))2+(Sx‧sinθ)2)[Formula 1] Dx=√((x 0 -(Sx‧cosθ)) 2 +(Sx‧sinθ) 2 )

另外,在式1中,將蒸發源36的位置資訊定義為在XY平面的(x0,0),另外將特定的基板101的位置資訊定義為在XY平面的(Sx‧cosθ,Sx‧sinθ)(請參考第2圖)。控制器52還從上述計算出來的距離Dx之中選擇最大值(最大距離)的距離SS(單位為mm),將此選擇的距離SS的值代入下列式2,計算出最佳壓力P(單位為Pa)的範圍。Further, in Equation 1, the position information of the evaporation source 36 is defined as (x 0 , 0) in the XY plane, and the position information of the specific substrate 101 is additionally defined as (Sx‧cos θ, Sx‧sin θ in the XY plane). ) (Please refer to Figure 2). The controller 52 also selects the distance SS (unit: mm) of the maximum value (maximum distance) from the calculated distance Dx, and substitutes the value of the selected distance SS into the following formula 2 to calculate the optimal pressure P (unit The range for Pa).

[式2] (0.06/SS)≦P≦(50/SS)[Formula 2] (0.06/SS)≦P≦(50/SS)

另外,上述式2的係數是本案諸位發明人考慮用於第二成膜原料的疏水性反應性有機化合物的分子量、成膜溫度等而計算出的獨立係數。然後,控制器52使壓力控制工具作動來控制容器內壓力,使真空容器2內的真空度(壓力)成為上述最佳壓力P的範圍。在本例中,是在此狀態開始輔助膜與防污膜的成膜。具體細節如下所述。Further, the coefficient of the above formula 2 is an independent coefficient calculated by the inventors of the present invention in consideration of the molecular weight, film formation temperature, and the like of the hydrophobic reactive organic compound used for the second film-forming material. Then, the controller 52 activates the pressure control tool to control the pressure inside the container so that the degree of vacuum (pressure) in the vacuum container 2 becomes the range of the above-described optimum pressure P. In this example, film formation of the auxiliary film and the antifouling film is started in this state. The specific details are as follows.

控制器52一旦藉由來自溫度感測器54的輸出,判定基板101的溫度已成為例如常溫~120℃、較好為50~90℃,則開始輔助膜的成膜。基板溫度若不到常溫,則成膜的輔助膜的密度低,而有無法得到充分的膜耐久性的傾向。基板溫度若超過120℃,則使用塑膠基板作為基板101時,有發生此基板101的劣化、變形等的可能性。另外,無加熱成膜亦有在使用適當材料時在常溫成膜的情況。When the controller 52 determines that the temperature of the substrate 101 has become, for example, normal temperature to 120 ° C, preferably 50 to 90 ° C by the output from the temperature sensor 54, the film formation of the auxiliary film is started. When the substrate temperature is less than normal temperature, the density of the auxiliary film formed is low, and there is a tendency that sufficient film durability cannot be obtained. When the substrate temperature exceeds 120 ° C, when a plastic substrate is used as the substrate 101, deterioration or deformation of the substrate 101 may occur. Further, there is a case where film formation without heating is carried out at room temperature when a suitable material is used.

在本例中,在開始輔助膜的成膜前的時間點,使離子槍38位在閒置運轉狀態。另外,亦先準備蒸發源34、36,使其可以藉由斷續器34a、36a的打開動作直接將第一成膜材料及第二成膜材料擴散(釋出)。In this example, the ion gun 38 is placed in an idle state at a point in time before the film formation of the auxiliary film is started. Further, the evaporation sources 34 and 36 are also prepared so that the first film formation material and the second film formation material can be directly diffused (released) by the opening operation of the interrupters 34a and 36a.

(4)接下來,控制器52將離子槍38的照射電力(功率)從閒置狀態增大至既定的照射電力,打開斷續器38a,開始在旋轉(繞著基板托座4a的旋轉軸公轉)中的基板101的表面照射離子束。在此同時,控制器52打開斷續器34a,亦開始第一成膜材料的離子輔助蒸鍍(IAD)。在配置有中和器(省略圖示)的情況中,此裝置的作動較好為也與離子束照射及蒸鍍的開始同時開始。也就是在本例中,是對基板101的成膜面進行下列步驟:使第一成膜材料從蒸發源34飛散、照射從離子槍38引出的導入氣體(在此處為氧)的離子數、照射電子。(4) Next, the controller 52 increases the irradiation power (power) of the ion gun 38 from the idle state to the predetermined irradiation power, opens the interrupter 38a, and starts to rotate (revolves around the rotation axis of the substrate holder 4a). The surface of the substrate 101 in the ) is irradiated with an ion beam. At the same time, the controller 52 opens the interrupter 34a and also begins ion assisted vapor deposition (IAD) of the first film forming material. In the case where a neutralizer (not shown) is disposed, the operation of the device preferably starts simultaneously with the start of ion beam irradiation and vapor deposition. That is, in this example, the film forming surface of the substrate 101 is subjected to the following steps: scattering the first film forming material from the evaporation source 34, and irradiating the number of ions of the introduced gas (here, oxygen) drawn from the ion gun 38. , illuminating electrons.

藉由離子束的離子輔助條件如下所述。導入至離子槍38的氣體種較好為例如氧、氬或氧與氬的混合氣體。來到離子槍38的上述氣體種的導入量(混合氣體時為合計導入量)較好為5~50sccm。離子的加速電壓(V1)較好為200~1500V。離子的電流密度(I1)較好為5~50μA/cm2。離子照射的時間(T1)較好為10~100秒。以電子單位電荷e(=1.602×10-19C)來除I1與T1的乘積(=(T1×I1)/e)是表示照射離子的照射個數,而在本例中,此離子的照射個數較好為5×1013~5×1014個/cm2的範圍,而可以以此範圍來照射離子束。另外,例如增大照射電力密度時,則縮短照射時間(T1);相反地縮小照射電力密度時則延長照射時間(T1),藉此亦可控制照射能量密度(=V1×I1×T1)。The ion assisting conditions by the ion beam are as follows. The gas species introduced into the ion gun 38 is preferably, for example, oxygen, argon or a mixed gas of oxygen and argon. The introduction amount of the gas species to the ion gun 38 (the total introduction amount when the gas is mixed) is preferably 5 to 50 sccm. The acceleration voltage (V1) of the ions is preferably from 200 to 1500V. The current density (I1) of the ions is preferably from 5 to 50 μA/cm 2 . The time (T1) of ion irradiation is preferably from 10 to 100 seconds. The product of dividing I1 and T1 by the electron unit charge e (=1.602 × 10 -19 C) (= (T1 × I1) / e) is the number of irradiations of the irradiated ions, and in this example, the irradiation of the ions The number is preferably in the range of 5 × 10 13 to 5 × 10 14 /cm 2 , and the ion beam can be irradiated in this range. Further, for example, when the irradiation power density is increased, the irradiation time (T1) is shortened; when the irradiation power density is decreased, the irradiation time (T1) is extended, whereby the irradiation energy density (= V1 × I1 × T1) can be controlled.

使中和器作動時的作動條件如以下所述。導入至中和器的氣體種例如為氬。上述氣體種的導入量較好為30~50sccm。電子的加速電壓較好為30~70V。電子電流只要是如供應離子電流以上的電流一般的電流即可。The operating conditions when the neutralizer is actuated are as follows. The gas species introduced into the neutralizer is, for example, argon. The introduction amount of the above gas species is preferably from 30 to 50 sccm. The acceleration voltage of the electron is preferably 30 to 70V. The electron current may be a current as a current of a supply current or more.

輔助膜首先在成膜初期階段,將三次元的核在基板101上形成為島狀,接下來這些核隨著成膜量(蒸發量)的增加而成長、合體,不久後成長為連續性的膜(島成長)。如此一來,在基板101表面以既定膜厚形成SiO2構成的輔助膜。控制器52是藉由水晶監視器50持續監視形成於基板101之上的薄膜(輔助膜)的膜厚,一旦成為既定的膜厚則停止成膜。另外,不隔著這樣的輔助膜而以後文敘述的方法直接形成防污膜,則可以將此防污膜的耐磨耗性提升至可耐實用的程度。但是藉由隔著這樣的輔助膜在基板101形成防污膜,則可期待防污膜的耐磨耗性能的進一步提升。其理由是例如在玻璃基板形成防污膜時,藉由疏油劑分子與玻璃表面的矽醇(silanol)基結合而形成薄膜。然而,由於玻璃的表面存在鹼金屬等的不純物,而有疏油劑分子與玻璃表面無法結合而形成防污膜的密接力較低的部分的可能性。因此,推測在不含不純物的SiO2等的輔助膜上形成防污膜,則可形成在基板全面的密接力高的防污膜,提升防污膜的耐磨耗性能。The auxiliary film first forms a three-dimensional core on the substrate 101 as an island in the initial stage of film formation, and then these nuclei grow and merge with the increase in the amount of film formation (evaporation amount), and soon become continuous. Membrane (island growth). As a result, an auxiliary film made of SiO 2 is formed on the surface of the substrate 101 with a predetermined film thickness. The controller 52 continuously monitors the film thickness of the thin film (auxiliary film) formed on the substrate 101 by the crystal monitor 50, and stops film formation once it has a predetermined film thickness. Further, the antifouling film can be directly formed without interposing such an auxiliary film by a method described later, and the abrasion resistance of the antifouling film can be improved to a practical level. However, by forming an antifouling film on the substrate 101 via such an auxiliary film, it is expected that the abrasion resistance of the antifouling film is further improved. The reason for this is that, for example, when an antifouling film is formed on a glass substrate, a film is formed by bonding an oleophobic molecule to a silanol group on the surface of the glass. However, since an impurity such as an alkali metal exists on the surface of the glass, there is a possibility that the oleophobic agent molecule and the glass surface cannot be combined to form a portion having a low adhesion force of the antifouling film. Therefore, it is presumed that the antifouling film is formed on the auxiliary film of SiO 2 or the like which does not contain impurities, and an antifouling film having a high adhesion to the entire substrate can be formed, and the abrasion resistance of the antifouling film can be improved.

(5)接下來,控制器52將離子槍38的照射電力回到閒置狀態並關閉斷續器34a、38a的同時,打開斷續器36a,開始藉由第二成膜原料的電阻加熱方式的真空蒸鍍。也就是對於旋轉中的複數個基板101,使來自蒸發源36的第二成膜原料在例如3~20分鐘的時間飛散,進行成膜處理。其結果,在複數個基板101分別隔著輔助膜以既定的膜厚(例如1~50nm)形成防污膜。控制器52是藉由水晶監視器50持續監視在基板101隔著輔助膜形成的薄膜的膜厚,一旦成為既定的膜厚則關閉斷續器36a,停止蒸鍍。藉由這些步驟在各基板101上依序形成輔助膜與防污膜。(5) Next, the controller 52 returns the irradiation power of the ion gun 38 to the idle state and closes the interrupters 34a, 38a, opens the interrupter 36a, and starts the resistance heating method by the second film forming material. Vacuum evaporation. That is, the second film forming material from the evaporation source 36 is scattered for a period of, for example, 3 to 20 minutes with respect to the plurality of substrates 101 being rotated, and a film forming process is performed. As a result, the anti-fouling film is formed on the plurality of substrates 101 with a predetermined film thickness (for example, 1 to 50 nm) via the auxiliary film. The controller 52 continuously monitors the film thickness of the film formed on the substrate 101 via the auxiliary film by the crystal monitor 50, and when the film thickness is set to a predetermined thickness, the interrupter 36a is closed to stop the vapor deposition. By these steps, an auxiliary film and an antifouling film are sequentially formed on each of the substrates 101.

在本例中,在藉由蒸發源36的成膜開始時之容器2內壓力的控制方面,若防污膜的成膜開始時的容器2內的壓力不滿(0.06/SS),則真空度過高而延長排氣時間而使成膜效率惡化,故不建議。另外,由於防污膜的成膜原料(有機材料)是蒸氣壓高而揮發性、昇華性佳,在過低的壓力下成膜時,防污膜的一部分容易再蒸發,而使構成該膜的防污膜分子無法緻密且均一地附著於基板101上的輔助膜。防污膜公認是在其構成分子到達基板101上的輔助膜後,以相鄰分子彼此形成網狀物(脫水縮合)的方式而形成,但在防污膜未均一地附著於基板101上的輔助膜時,則在基板101上的輔助膜會存在未形成防污膜的部分。若存在為存在防污膜的部分,會以此部分為起點發生摩擦時的薄膜剝離,結果就無法提升耐磨耗性。In this example, in the control of the pressure in the container 2 at the start of film formation by the evaporation source 36, if the pressure in the container 2 at the start of film formation of the antifouling film is not full (0.06/SS), the degree of vacuum It is not recommended because it is too high and the exhaust time is prolonged to deteriorate the film formation efficiency. In addition, since the film forming raw material (organic material) of the antifouling film has high vapor pressure and is excellent in volatility and sublimation, when a film is formed under an excessively low pressure, a part of the antifouling film is easily re-evaporated to constitute the film. The antifouling film molecules are not densely and uniformly attached to the auxiliary film on the substrate 101. The antifouling film is formed by forming a network (dehydration condensation) between adjacent molecules after the constituent molecules reach the auxiliary film on the substrate 101, but the antifouling film is not uniformly attached to the substrate 101. In the case of the auxiliary film, the auxiliary film on the substrate 101 may have a portion where the antifouling film is not formed. If there is a portion where the antifouling film is present, the film peeling occurs when the portion is used as a starting point, and as a result, the abrasion resistance cannot be improved.

另一方面,若防污膜的成膜開始時的容器2內的壓力超過(50/SS),則起因於防污膜分子的平均自由徑的降低,防污膜分子難以到達基板101上的輔助膜,而無法緻密且均一地附著。由於前文敘述之防污膜是在其構成分子到達基板101上的輔助膜後,以相鄰分子彼此形成網狀物(脫水縮合)的方式而形成,在防污膜未均一地附著於基板101上的輔助膜時,則在基板101上的輔助膜會存在未形成防污膜的部分,以此為存在防污膜的部分為起點發生摩擦時的薄膜剝離,結果就無法提升耐磨耗性。On the other hand, if the pressure in the container 2 at the start of film formation of the anti-fouling film exceeds (50/SS), the anti-fouling film molecules are hard to reach the substrate 101 due to the decrease in the average free-diameter of the anti-fouling film molecules. The auxiliary film is not dense and uniformly attached. Since the antifouling film described above is formed in such a manner that its constituent molecules reach the auxiliary film on the substrate 101, the adjacent molecules form a network (dehydration condensation), and the antifouling film is not uniformly attached to the substrate 101. In the case of the auxiliary film, the auxiliary film on the substrate 101 may have a portion where the antifouling film is not formed, and the film may be peeled off when the portion where the antifouling film exists as a starting point, and as a result, the abrasion resistance cannot be improved. .

以本例成膜的防污膜是具有疏水性、疏油性的膜,具有防止油污附著的功能。在此處,「防止油污附著」指的不僅僅是油污不附著,意指即使附著仍可簡單地拭除。也就是防污膜會維持疏油性。具體而言,以本例在輔助膜上成膜的防污膜,其耐磨耗性是提升至可耐實用的等級,而在即使以1kg/cm2的荷重的鋼絲棉#0000作超過200次(較好為400次、更好為600次)的來回,仍可拭去油性筆造成的油墨。這樣地提升耐磨耗性,是因為如上所述,藉由適當地調節藉由蒸發源36成膜開始時的容器2內壓力,以防污膜分子確實地佈滿基板101上的輔助膜的表面,而使在基板101上的輔助膜不存在防污膜的非存在部分。The antifouling film formed in this example is a film having hydrophobicity and oleophobic property, and has a function of preventing adhesion of oil. Here, "preventing oil stain adhesion" means not only that the oil does not adhere, but means that it can be easily wiped off even if it adheres. That is, the antifouling film will maintain oleophobicity. Specifically, the antifouling film formed on the auxiliary film in this example is improved in wear resistance to a practical grade, and is more than 200 in steel wool #0000 even at a load of 1 kg/cm 2 . The back and forth (preferably 400 times, more preferably 600 times) can still wipe off the ink caused by the oily pen. This improves the wear resistance because, as described above, the anti-fouling film molecules are surely covered with the auxiliary film on the substrate 101 by appropriately adjusting the pressure in the container 2 at the start of film formation by the evaporation source 36. The surface is such that the auxiliary film on the substrate 101 does not have a non-existing portion of the anti-fouling film.

如以上說明,藉由本例之使用成膜裝置1的成膜方法,由接受來自距離感測器39的輸出的控制器52進行既定的演算,計算出連結保持於基板托座4a的自轉軸附近的特定的基板101與蒸發源36的直線距離Dx,其後從計算出的距離Dx中選擇最大值(最大距離)SS,根據此選擇的最大距離SS的值進一步進行既定的演算,計算出成膜開始時的最佳壓力P。然後控制器52使壓力控制工具作動而適當地控制容器內壓力而使真空容器2的內部壓力落在計算出來的最佳壓力P的範圍,而形成防污膜。藉此,可將成膜於各基板101的輔助膜上的防污膜的耐磨耗性提升至可耐實用的程度。As described above, according to the film forming method using the film forming apparatus 1 of the present embodiment, the controller 52 that receives the output from the distance sensor 39 performs a predetermined calculation, and calculates that the connection is held in the vicinity of the rotation axis of the substrate holder 4a. The linear distance Dx between the specific substrate 101 and the evaporation source 36, and then the maximum value (maximum distance) SS is selected from the calculated distance Dx, and the predetermined calculation is further performed based on the value of the selected maximum distance SS, and the calculation is performed. The optimum pressure P at the beginning of the film. Then, the controller 52 activates the pressure control tool to appropriately control the pressure inside the container so that the internal pressure of the vacuum container 2 falls within the range of the calculated optimum pressure P to form an antifouling film. Thereby, the abrasion resistance of the antifouling film formed on the auxiliary film of each substrate 101 can be improved to a level that is practical.

得到這樣的效果,推測是因為如上所述,在適當地控制成膜開始時的容器2內壓力之下,有效地防止在基板101上的輔助膜已一度成膜的防污膜的一部分的再蒸發,且可以確實地將構成防污膜的防污膜分子緻密且均一地附著於基板101,並使得在基板101的輔助膜上不存在未形成防污膜的部分。Such an effect is obtained because it is presumed that, as described above, under the pressure in the container 2 at the start of film formation, the portion of the antifouling film on which the auxiliary film on the substrate 101 has been once formed is effectively prevented. Evaporation, and the antifouling film molecules constituting the antifouling film can be surely adhered to the substrate 101 in a dense and uniform manner, and the portion where the antifouling film is not formed is not present on the auxiliary film of the substrate 101.

藉由以本例的方法成膜的防污膜,即使以重的荷重(例如1kg/cm2程度的荷重)拭除附著於其表面的指紋等的油分,仍可有效地使防污膜的構成成分殘存。也就是藉由本實施形態,可以在基板101上形成具備可耐實用的耐磨耗性之防污膜。By the antifouling film formed by the method of the present example, even if the oil such as a fingerprint attached to the surface thereof is wiped off with a heavy load (for example, a load of about 1 kg/cm 2 ), the antifouling film can be effectively made. The constituents remain. In other words, according to this embodiment, it is possible to form an antifouling film having practical wear resistance on the substrate 101.

以本例的方法形成有防污膜的基板101,可適用於要求疏油性的用途,例如:各種顯示器(例如電漿顯示器面板PDP、映像管CRT、液晶顯示器LCD、電致發光顯示器ELD等);展示櫃(showcase);時鐘、計量儀器等的蓋玻璃;銀行ATM、票券的售票機等的觸控面板式電子機器的觸控面;具有上述各種顯示器的行動電話、個人電腦等的各種電子機器等等。The substrate 101 having the antifouling film formed by the method of this example can be applied to applications requiring oleophobicity, for example, various displays (for example, plasma display panel PDP, image tube CRT, liquid crystal display LCD, electroluminescence display ELD, etc.) Display case (showcase); cover glass for clocks, measuring instruments, etc.; touch panel type electronic device touch screens such as bank ATMs, ticket vending machines, etc.; various mobile phones, personal computers, etc. having various displays as described above; Electronic machines and so on.

另外,在上述實施形態中,是例示使用距離感測器39的情況作為測距機構的一例,但不限定於此。在本例中要言之,只要是可對控制器52輸出可由控制器52計算出連結保持於基板托座4a的自轉軸附近的特定的基板101與蒸發源36的直線距離Dx之資訊(數據)的結構者即可。另外,在本發明中不一定要設測距機構,亦可適用根據預先計測的距離數據而計算出的容器內壓力範圍。另外,測距機構的作動開始的時機並未限定在上述實例(也就是輔助膜的成膜開始前),亦可以在即將開始防污膜的成膜前進行。In the above embodiment, the case where the distance sensor 39 is used is exemplified as an example of the distance measuring mechanism, but the present invention is not limited thereto. In this example, as long as the controller 52 outputs a linear distance Dx which can be calculated by the controller 52 to be connected to the specific substrate 101 and the evaporation source 36 in the vicinity of the rotation axis of the substrate holder 4a (data) The structure of the structure can be. Further, in the present invention, it is not necessary to provide a distance measuring mechanism, and it is also possible to apply a pressure range in the container calculated based on the distance data measured in advance. Further, the timing at which the operation of the distance measuring mechanism is started is not limited to the above example (that is, before the film formation of the auxiliary film is started), and may be performed immediately before the film formation of the antifouling film is started.

【實施例】[Examples]

以下,列舉出比上述發明的實施形態更加具體化的實施例,以更詳細地說明本發明。Hereinafter, the present invention will be described in more detail by exemplifying embodiments that are more specific than the embodiments of the invention described above.

《實驗例1~19》"Experimental Examples 1~19"

使用第1圖所示的成膜裝置1,在具有既定的直徑(請參照表1)的圓頂狀的基板托座4a的背面,設置(設置狀況請參考第3圖)既定片數的鉛筆硬度(JIS-K5600-5-4)6H的玻璃基板(尺寸:縱100mm×橫50mm×厚1mm)作為基板101。The film forming apparatus 1 shown in Fig. 1 is provided with a predetermined number of pencils on the back surface of the dome-shaped substrate holder 4a having a predetermined diameter (see Table 1). A glass substrate (size: vertical 100 mm × width 50 mm × thickness 1 mm) having a hardness (JIS-K5600-5-4) 6H was used as the substrate 101.

接下來,使基板托座4a以10rpm的速度(RS)旋轉的同時,使泵24作動而開始容器2內的排氣,藉由壓力調整工具將容器2內壓力調整為1×10-3Pa,基板溫度達60℃後,以下列條件將輔助膜成膜於基板101上。Next, the substrate holder 4a was rotated at a speed (RS) of 10 rpm, the pump 24 was actuated to start the exhaust in the container 2, and the pressure inside the container 2 was adjusted to 1 × 10 -3 Pa by a pressure adjusting tool. After the substrate temperature reached 60 ° C, the auxiliary film was formed on the substrate 101 under the following conditions.

另外在本例中,在上述排氣中,亦開始距離感測器39(OPTEX FA CO.,LTD.製的LED距離感測器,商品名:DT2),一面對旋轉中的基板托座4a的自轉軸附近連續照射光線,一面將受光、處理後的測定結果(距離Sx與傾斜角θ的各個資訊)接連不斷地輸出至控制器52。控制器52是在計算出距離Dx之後,根據選擇的距離SS計算出最佳壓力P的範圍。Further, in this example, in the above-described exhaust gas, the distance sensor 39 (LED distance sensor manufactured by OPTEX FA CO., LTD., trade name: DT2) is also started, and a substrate holder in rotation is faced. The light is continuously irradiated near the rotation axis of 4a, and the light-receiving and processed measurement results (each information of the distance Sx and the inclination angle θ) are continuously output to the controller 52. The controller 52 calculates the range of the optimum pressure P based on the selected distance SS after calculating the distance Dx.

‧成膜原料:SiO2‧ film forming material: SiO 2 ;

‧成膜速率:7.2nm/min.;‧ film formation rate: 7.2nm / min.;

‧離子槍38的條件‧Ion gun 38 conditions

導入氣體種及導入量:O2、40sccm;Introduced gas species and introduction amount: O 2 , 40 sccm;

離子加速電壓:1000V;Ion acceleration voltage: 1000V;

離子電流密度:30μA/cm2Ion current density: 30 μA/cm 2 ;

‧中和器的條件‧ Neutralizer conditions

導入氣體種及導入量:Ar、10sccm;Introduced gas species and introduction amount: Ar, 10 sccm;

電子電流:1A。Electronic current: 1A.

接下來,停止蒸鍍源34、離子槍38、中和器的作動後,一旦控制器52藉由來自壓力檢測工具22的輸出確認容器2內壓力是成為既定壓力(請參考表1),藉由以壓力控制工具的控制而保持此狀態。在此狀態下打開斷續器36a,開始藉由蒸發源36的成膜原料(Canon Optron. Inc.製的疏油劑,商品名:OF-SR,成分名:含氟有機細化合物)的蒸鍍(成膜速率:1.0nm/min.)。然後,得到將厚度5nm的防污膜在基板101的輔助膜上成膜的各實驗例樣品。Next, after the operation of the vapor deposition source 34, the ion gun 38, and the neutralizer is stopped, the controller 52 confirms that the pressure in the container 2 is a predetermined pressure by the output from the pressure detecting tool 22 (refer to Table 1). This state is maintained by the control of the pressure control tool. In this state, the interrupter 36a is opened, and steaming of the film forming raw material (an oleophobic agent manufactured by Canon Optron. Inc., trade name: OF-SR, component name: fluorine-containing organic fine compound) by the evaporation source 36 is started. Plating (film formation rate: 1.0 nm/min.). Then, a sample of each experimental example in which an antifouling film having a thickness of 5 nm was formed on the auxiliary film of the substrate 101 was obtained.

在獲得的各實驗例樣品的防污膜的表面,承載1cm2的鋼絲棉#0000,在施加1kg/cm2的荷重的狀態,以在50mm的直線上1秒來回一次的速度,進行擦傷試驗。在此擦傷試驗的每100次來回,以油性奇異筆(有機溶劑型馬克筆,商品名:極細,ZEBRA CO.,LTD.製)在試驗面(防污膜面)畫線,評量是否可以以乾燥布拭去油性奇異筆的有機溶劑型油墨。其結果,在表1顯示可以拭去有機溶劑型油墨的最大擦傷來回次數。On the surface of the antifouling film of each experimental sample obtained, 1 cm 2 of steel wool #0000 was carried, and a scratch test was performed at a speed of 1 second on a straight line of 50 mm under a load of 1 kg/cm 2 . . In every 100 rounds of this abrasion test, oily singular pen (organic solvent type marker, trade name: Very fine, made by ZEBRA CO., LTD.) On the test surface (anti-fouling film surface), it is possible to evaluate whether the organic solvent-based ink of the oily singular pen can be wiped off with a dry cloth. As a result, Table 1 shows the maximum number of abrasions of the organic solvent type ink which can be wiped off.

根據表1可理解以下的情況。距離SS為590mm時,藉由控制器52計算出防污膜的最佳壓力P(成膜開始壓力)為10-4~8.5×10-2Pa,與將容器2內壓力調整為此範圍外而成膜的樣品(實驗例7)作比較,可以確認將容器2內壓力調整為此範圍內而成膜的樣品(實驗例1~6)的有用性。SS為1150mm時,藉由控制器52計算出防污膜的最佳壓力P為5.2×10-5~4.3×10-2Pa,與將容器2內壓力調整為此範圍外而成膜的樣品(實驗例13)作比較,可以確認將容器2內壓力調整為此範圍內而成膜的樣品(實驗例8~12)的有用性。SS為1550mm時,藉由控制器52計算出防污膜的最佳壓力P為3.7×10-5~3.1×10-2Pa,與將容器2內壓力調整為此範圍外而成膜的樣品(實驗例18、19)作比較,可以確認將容器2內壓力調整為此範圍內而成膜的樣品(實驗例14~17)的有用性。The following can be understood from Table 1. When the distance SS is 590 mm, the optimum pressure P (film formation start pressure) of the antifouling film is calculated by the controller 52 to be 10 -4 to 8.5 × 10 -2 Pa, and the pressure inside the container 2 is adjusted outside the range. The sample formed in the film (Experimental Example 7) was compared, and the usefulness of the sample (Experimental Examples 1 to 6) in which the pressure in the container 2 was adjusted to be in this range was confirmed. When SS is 1150 mm, the optimum pressure P of the antifouling film is calculated by the controller 52 to be 5.2 × 10 -5 to 4.3 × 10 -2 Pa, and the sample in which the pressure inside the container 2 is adjusted to be outside the range is formed. (Experimental Example 13) For comparison, the usefulness of the sample (Experimental Examples 8 to 12) in which the pressure in the container 2 was adjusted to be in this range was confirmed. When the SS is 1550 mm, the optimum pressure P of the antifouling film is calculated by the controller 52 to be 3.7 × 10 -5 to 3.1 × 10 -2 Pa, and the sample in which the pressure inside the container 2 is adjusted to be outside the range is formed. (Experimental Examples 18 and 19) For comparison, it was confirmed that the pressure in the container 2 was adjusted to be useful in the film formed in this range (Experimental Examples 14 to 17).

另外,實驗例6-1、12-1、17-1是不進行輔助膜的成膜,而在基板101上直接形成防污膜者,與隔著輔助膜將防污膜形成於基板101上的樣品(實驗例6、12、17)比較,最大擦傷來回次數分別較差。然而,與將容器2內壓力調整為上述最佳壓力P的範圍外而成膜的樣品(實驗例7、13、18、19)作比較時,可確認充分地賦予耐磨耗性能。Further, Experimental Examples 6-1, 12-1, and 17-1 are formed by directly forming an anti-fouling film on the substrate 101 without forming an auxiliary film, and forming an anti-fouling film on the substrate 101 via the auxiliary film. The samples (Experimental Examples 6, 12, and 17) were compared, and the maximum number of abrasions was poor. However, when the samples (Experimental Examples 7, 13, 18, and 19) formed by adjusting the pressure in the container 2 to the above-described optimum pressure P were compared, it was confirmed that the abrasion resistance was sufficiently imparted.

1...成膜裝置1. . . Film forming device

2...真空容器2. . . Vacuum container

4a...基板托座4a. . . Substrate holder

22...壓力檢測工具twenty two. . . Pressure detection tool

23...管路twenty three. . . Pipeline

24...真空泵twenty four. . . Vacuum pump

34...蒸發源34. . . Evaporation source

34a...斷續器34a. . . Interrupter

34b...坩堝34b. . . crucible

34c...電子槍34c. . . Electron gun

34d...電子槍電源34d. . . Electron gun power supply

36...蒸發源36. . . Evaporation source

36a...斷續器36a. . . Interrupter

36b...坩堝36b. . . crucible

38...離子槍38. . . Ion gun

38a...斷續器38a. . . Interrupter

39...距離感測器39. . . Distance sensor

50...水晶監視器50. . . Crystal monitor

51...膜厚檢測部51. . . Film thickness detecting unit

52...控制器52. . . Controller

53...電熱器53. . . Heater

54...溫度感測器54. . . Temperature sensor

101...基板101. . . Substrate

第1圖是從正面看可實現本發明方法的成膜裝置的一構成例的剖面圖。Fig. 1 is a cross-sectional view showing a configuration example of a film forming apparatus which can realize the method of the present invention as seen from the front.

第2圖是第1圖的局部放大圖。Fig. 2 is a partial enlarged view of Fig. 1.

第3圖是一說明圖,說明使用第1圖與第二圖的距離感測器之在基板托座的任意位置有無基板的判定方法。Fig. 3 is an explanatory view for explaining a method of determining the presence or absence of a substrate at an arbitrary position of a substrate holder using the distance sensors of Figs. 1 and 2;

1...成膜裝置1. . . Film forming device

2...真空容器2. . . Vacuum container

4a...基板托座4a. . . Substrate holder

22...壓力檢測工具twenty two. . . Pressure detection tool

23...管路twenty three. . . Pipeline

24...真空泵twenty four. . . Vacuum pump

34...蒸發源34. . . Evaporation source

34a...斷續器34a. . . Interrupter

34b...坩堝34b. . . crucible

34c...電子槍34c. . . Electron gun

34d...電子槍電源34d. . . Electron gun power supply

36...蒸發源36. . . Evaporation source

36a...斷續器36a. . . Interrupter

36b...坩堝36b. . . crucible

38...離子槍38. . . Ion gun

38a...斷續器38a. . . Interrupter

39...距離感測器39. . . Distance sensor

50...水晶監視器50. . . Crystal monitor

51...膜厚檢測部51. . . Film thickness detecting unit

52...控制器52. . . Controller

53...電熱器53. . . Heater

54...溫度感測器54. . . Temperature sensor

101...基板101. . . Substrate

Claims (3)

一種防污膜的成膜方法,其是使用一成膜裝置,其中防污膜的成膜源與輔助膜的成膜源是分別設置在真空容器內的下方,並將基板托座以可繞著鉛直軸自轉的方式配置在該真空容器內的上方,還具有壓力控制工具來控制該真空容器內的壓力;該成膜方法是在使成膜對象物的複數個基板保持在該基板托座而與上述兩成膜源對向之後,一面使該基板托座旋轉、一面依序將該輔助膜與該防污膜在各基板上成膜;其特徵在於:使該壓力控制工具作動而調整該真空容器的內壓而使該真空容器的內壓成為根據該真空容器的大小而決定的壓力範圍之後,將該防污膜成膜。A film forming method for an antifouling film, which uses a film forming device, wherein a film forming source of the antifouling film and a film forming source of the auxiliary film are respectively disposed under the vacuum container, and the substrate holder is rewound The vertical axis is rotated in a manner of being disposed above the vacuum container, and further has a pressure control tool for controlling the pressure in the vacuum container; the film forming method is to hold a plurality of substrates of the film formation object on the substrate holder After facing the two film formation sources, the auxiliary film and the antifouling film are sequentially formed on each substrate while rotating the substrate holder; the pressure control tool is adjusted to be actuated The internal pressure of the vacuum container is such that the internal pressure of the vacuum container becomes a pressure range determined according to the size of the vacuum container, and then the antifouling film is formed into a film. 如申請專利範圍第1項所述之防污膜的成膜方法,其特徵在於使用的壓力範圍是根據保持於該基板托座的自轉軸附近的基板與該防污膜的成膜源的距離所決定。The film forming method of the antifouling film according to the first aspect of the invention, characterized in that the pressure range used is a distance from a substrate held near the rotation axis of the substrate holder and a film forming source of the antifouling film. Determined. 如申請專利範圍第2項所述之防污膜的成膜方法,其特徵在於將該距離設為SS(單位為mm)、將該防污膜的成膜壓力設為P(單位為Pa)時,調整該真空容器的內壓而使上述P滿足(0.06/SS)≦P≦(50/SS)的關係。The film forming method of the antifouling film according to the second aspect of the invention is characterized in that the distance is SS (unit: mm), and the film forming pressure of the antifouling film is P (unit: Pa) At this time, the internal pressure of the vacuum vessel is adjusted so that the above P satisfies the relationship of (0.06/SS) ≦P ≦ (50/SS).
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