TW201328972A - Segmented graphene nanoribbons - Google Patents

Segmented graphene nanoribbons Download PDF

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TW201328972A
TW201328972A TW101142097A TW101142097A TW201328972A TW 201328972 A TW201328972 A TW 201328972A TW 101142097 A TW101142097 A TW 101142097A TW 101142097 A TW101142097 A TW 101142097A TW 201328972 A TW201328972 A TW 201328972A
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graphene
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Roman Fasel
Pascal Ruffieux
Klaus Mullen
Stephan Blankenburg
jin-ming Cai
Xin-Liang Feng
Carlo A Pignedoli
Daniele Passerone
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Basf Se
Empa Materials Science And Technology
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Abstract

The present invention relates to a segmented graphene nanoribbon, comprising at least two different graphene segments covalently linked to each other, each graphene segment having a monodisperse segment width, wherein the segment width of at least one of said graphene segments is 4 nm or less.

Description

分段之石墨烯奈米帶 Segmented graphene nanobelt

本發明係關於一種分段之石墨烯奈米帶及用於製造該等石墨烯奈米帶之方法。 The present invention relates to a segmented graphene nanobelt and a method for making the graphene nanobelt.

為原子級石墨薄層之石墨烯已在物理、材料科學及化學上受到廣泛的關注,因為最新發現其具有吸引人的電子特性。該等電子特性涉及較佳之電荷載子遷移率及量子霍爾效應(quantum Hall effect)。此外,其化學堅固性及材料強度使得石墨烯成為用於自透明導電電極至用於電荷及能量儲存用之裝置領域相關應用之理想候選者。 Graphene, which is a thin layer of atomic graphite, has received extensive attention in physics, materials science, and chemistry because it has recently been found to have attractive electronic properties. Such characteristics relate to preferred electron mobility of the charge carriers and the quantum Hall effect (quantum Hall effect). In addition, its chemical robustness and material strength make graphene an ideal candidate for applications from transparent conductive electrodes to devices used in charge and energy storage applications.

石墨烯奈米帶(GNR)係母體石墨烯晶格衍生之線性結構。其特徵為由於長度對寬度比率增加所致之高形狀異向性。目前,材料科學領域尚在廣泛討論將其運用於更小型、更扁平且更快速之碳基裝置及積體電路。與石墨烯相比,扶手椅型GNR展現與其寬度強力相關之電子能帶隙。與此同時GNR之邊緣結構對電子特性具有強力影響。關於較小奈米石墨烯之計算模擬及實驗結果表明展現在鋸齒形邊緣呈未鍵結π-電子狀態之GNR可作為用於自旋子裝置中之主動元件。 The graphene nanobelt (GNR) is a linear structure derived from the parent graphene lattice. It is characterized by high shape anisotropy due to an increase in length to width ratio. At present, the field of materials science is widely discussed and applied to smaller, flatter and faster carbon-based devices and integrated circuits. Compared to graphene, the armchair type GNR exhibits an electron band gap that is strongly related to its width. At the same time, the edge structure of the GNR has a strong influence on the electronic characteristics. The computational simulations and experimental results on the smaller nanographene indicate that the GNR exhibiting an unbonded π-electron state at the zigzag edge can be used as an active component in a spin sub-device.

石墨烯奈米帶(GNR)為用於新穎石墨烯基電子裝置之高前景的構築塊。除了最為重要之導電性之鋸齒形邊緣(ZGNR)與主要為半導體性之扶手椅型邊緣帶(AGNR)之差異之外,更一般的GNR幾何形狀差異容許經由一維(1D)量 子限制進行間隙之調諧。一般而言,增加帶寬度會導致能帶隙總體上減小,且就扶手椅型GNR(AGNR)而言其疊加振盪特徵可達成最大化。 Graphene nanoribbons (GNR) are high-progress building blocks for novel graphene-based electronic devices. In addition to the difference between the most important conductive zigzag edge (ZGNR) and the predominantly semiconducting armchair edge band (AGNR), the more general GNR geometry differences allow for one-dimensional (1D) quantities. The sub-limit performs the tuning of the gap. In general, increasing the tape width results in a reduction in the band gap as a whole, and its superimposed oscillation characteristics can be maximized in the case of an armchair type GNR (AGNR).

於此點上,內GNR異質結構可提供針對(光學-)電子裝置之實現之全新概念。的確地,使用GNR而非結晶半導體薄膜作為構築塊,可充分地利用成分之量子特性,且潛在地可得到介於不同GNR之間之界面,而不含有缺陷。可簡單地藉由改變組件之寬度而非改變其化學組成來實現異質接面不同組件間之能帶隙之調諧,潛在地容許「全碳」裝置組件。用於積體電路及其他可用GNR異質接面製成之裝置之許多電子組件述於(例如)專利申請案US 2009/0174435中。 At this point, the inner GNR heterostructure can provide a completely new concept for the implementation of (optical-) electronic devices. Indeed, the use of GNRs rather than crystalline semiconductor films as building blocks allows for full utilization of the quantum properties of the components and potentially provides an interface between different GNRs without defects. The tuning of the bandgap between different components of a heterojunction can be achieved simply by varying the width of the component rather than changing its chemical composition, potentially allowing "all carbon" device components. A number of electronic components for use in integrated circuits and other devices made of GNR heterojunctions are described, for example, in patent application US 2009/0174435.

然而,標準的由上而下製造技術,諸如石墨烯切片(例如利用微影術)、將碳奈米管解開(如US 2010/0047154及US 2011/0097258中所述)、或使用奈米線之模板(如KR 2011/005436中所述),係不適用於窄於5至10 nm之帶,因為不對邊緣構形進行精確控制及其等無法製得具有單分散寬度分佈之帶。就高效電子裝置而言,帶寬度必需遠小於10 nm,需要精確控制其寬度,及重要的係,其邊緣必需光滑,因為與理想邊緣形狀之甚至極微小的偏差會導致電子特性嚴重劣化。 However, standard top-down manufacturing techniques, such as graphene sections (eg, using lithography), unwinding carbon nanotubes (as described in US 2010/0047154 and US 2011/0097258), or using nanometers The template of the line (as described in KR 2011/005436) does not apply to strips narrower than 5 to 10 nm because of the lack of precise control of the edge configuration and the inability to produce strips having a monodisperse width distribution. In the case of high-efficiency electronic devices, the width of the tape must be much less than 10 nm, the width of which needs to be precisely controlled, and the important system, the edges of which must be smooth, because even slight deviations from the ideal edge shape can cause severe deterioration of electronic properties.

對異質接面及異質結構(多個異質接面之組合)之強烈興趣源於其等為當代高速光學電子設備之基本構築塊之事實。半導體異質結構通常藉由堆疊展現不同電子能帶隙之 結晶材料進行製造,其中需要使用分子束磊晶法或化學氣相沉積技術以精確控制2D界面。側異質接面代表甚至更難的挑戰。多晶石墨烯可利用(固有側面)晶界充作1D界面,及限制域邊界之定向可能與電子及輸送特性相關。自1D界面至由有限原子組所組成之結構可控「0D」異質接面因而顯示出高度吸引人的下一步步驟。 The strong interest in heterojunctions and heterostructures (combinations of multiple heterojunctions) stems from the fact that they are the basic building blocks of contemporary high-speed optical electronics. Semiconductor heterostructures typically exhibit different electron band gaps by stacking Crystalline materials are fabricated in which molecular beam epitaxy or chemical vapor deposition techniques are required to precisely control the 2D interface. Side heterojunctions represent even more difficult challenges. Polycrystalline graphene can utilize the (intrinsic side) grain boundaries to act as a 1D interface, and the orientation of the confinement domain boundaries may be related to electron and transport properties. The controllable "0D" heterojunction from the 1D interface to the structure consisting of finite atomic groups thus shows a highly attractive next step.

然而,由於微影術及其他已知的石墨烯奈米結構製造方法之固有局限性,仍難以實驗實現具有所需高精密度GNR異質接面。目前基於溶液中脫氫環化反應(例如,Dössel,L.;Gherghel,L.;Feng,X.;Müllen,K.Angew.Chem.Int.Ed.50,2540-2543(2011))或固體基材(例如,Cai,J.;等人Nature 466,470-473(2010))之自下而上法顯示係合成具有精確控制邊緣結構之奈米帶及奈米石墨烯之高前景途徑。 However, due to the inherent limitations of lithography and other known methods of fabricating graphene nanostructures, it is still difficult to experimentally achieve a GNR heterojunction with the desired high precision. Currently based on dehydrocyclization in solution (for example, Dössel, L.; Gherghel, L.; Feng, X.; Müllen, K. Angew. Chem. Int. Ed. 50, 2540-2543 (2011)) or solid The bottom-up method of the substrate (e.g., Cai, J.; et al. Nature 466, 470-473 (2010)) shows a high promising pathway for the synthesis of nanobelts and nanographenes with precise control of the edge structure.

就使用寡伸苯基先質之以溶液為基礎的方法而言,通常係在第一步步驟製得聚合物,該聚合物隨後藉由Scholl型氧化脫氫環化轉化成石墨結構。然而,必須小心地調整母體單體之設計以確使芳族單元在化學輔助石墨化成最終GNR結構時達成適宜配置。 In the case of a solution-based process using an oligophenylene precursor, the polymer is typically produced in a first step which is subsequently converted to a graphite structure by Scholl-type oxidative dehydrocyclization. However, the design of the parent monomer must be carefully adjusted to ensure that the aromatic unit achieves a suitable configuration when chemically assisted graphitization into the final GNR structure.

J.Wu、L.Gherghel、D.Watson、J.Li、Z.Wang、C.D.Simpson、U.Kolb及K.Müllen於Macromolecules 2003之36,7082-7089中報導藉由分子內氧化脫氫環化藉由重複1,4-雙(2,4,5-三苯基環戊烷並二烯酮-3-基)苯與二乙炔基聯三苯之狄爾斯-阿爾德環化加成(Diels-Alder cycloaddition) 所製得的可溶性支鏈聚伸苯基,實現石墨奈米帶之合成。所得石墨烯帶不是線性的而是包涵歸因於聚伸苯基先質之結構設計之統計分佈「紐結」。 J. Wu, L. Gherghel, D. Watson, J. Li, Z. Wang, CDSimpson, U. Kolb, and K. Müllen, in Macromolecules 2003, 36, 7072-7089, reported by intramolecular oxidative dehydrocyclization By repeating the Diels-Alder cycloaddition of 1,4-bis(2,4,5-triphenylcyclopentadienone-3-yl)benzene with diacetylenyltriphenyl ( Diels-Alder cycloaddition) The obtained soluble branched polyphenylene is synthesized to realize the synthesis of the graphite nanobelt. The resulting graphene band is not linear but encompasses the statistical distribution "knot" attributed to the structural design of the polyphenylene precursor.

Y.Fogel、L.Zhi、A.Rouhanipour、D.Andrienko、H.J.Räder及K.Müllen之Macromolecules 2009,42,6878-6884報導利用呈重複單元中之剛性二苯并芘核藉由微波輔助狄爾斯-阿爾德反應合成5個單分散帶類型聚伸苯基之同系物。併有多達6個二苯并芘單元之芳族主鏈中,所得聚伸苯基帶之尺寸範圍為132至372個碳原子。因為主鏈之可撓性及藉由十二烷基鏈之周邊取代,故聚伸苯基帶可溶於有機溶劑中。於另一反應步驟中,藉由脫氫環化製得帶類型多環芳香烴(PAH)。 Y. Fogel, L. Zhi, A. Rouhanipour, D. Andrienko, HJ Räder, and K. Müllen, Macromolecules 2009, 42, 6878-6884, reporting the use of a rigid dibenzopyrene nucleus in a repeating unit by microwave assisted Dil The s- alder reaction synthesizes five monodisperse band type polyphenylene homologs. In the aromatic backbone of up to six dibenzoindole units, the resulting polyphenylene bands range in size from 132 to 372 carbon atoms. Because of the flexibility of the backbone and the substitution by the periphery of the dodecyl chain, the polyphenylene strip is soluble in organic solvents. In another reaction step, a polycyclic aromatic hydrocarbon (PAH) is obtained by dehydrocyclization.

所有該等以溶液為基礎的方法均得到非分段之石墨烯奈米帶且無法以可製得分段帶之方式控制脫氫環化步驟。此外,所有該等方法將產生極難溶的GNR產物,其不可逆地凝聚於溶液中並無法以個別石墨烯帶方式處理而是以石墨碳方式進行處理的。 All of these solution-based methods result in non-segmented graphene nanoribbons and the dehydrocyclization step cannot be controlled in such a way as to produce a segmented band. In addition, all of these processes will produce very insoluble GNR products that irreversibly condense in solution and cannot be treated in individual graphene bands but in graphite carbon.

受控石墨烯奈米帶之表面限制自下而上法已描述於J.Cai等人,Nature 466,第470至473頁(2010)中。然而,尚未得到分段之GNR結構。 The surface-restricted bottom-up method of controlled graphene nanoribbons has been described in J. Cai et al., Nature 466, pp. 470-473 (2010). However, the segmented GNR structure has not yet been obtained.

本發明之一目的係提供一種具有精確控制邊緣構形及明確界定寬度之石墨烯奈米帶(GNR),其可用於形成異質接面,及提供用於製造此種石墨烯奈米帶之方法。 It is an object of the present invention to provide a graphene nanobelt (GNR) having precise control of edge configuration and a well defined width, which can be used to form a heterojunction, and to provide a method for making such a graphene nanobelt .

根據第一態樣,本發明提供一種分段之石墨烯奈米帶,其包括彼此共價鍵聯之至少兩段不同的石墨烯片段,各石墨烯片段具有單分散性片段寬度,其中該等石墨烯片段中至少一者之片段寬度為4 nm或更小。 According to a first aspect, the present invention provides a segmented graphene nanoribbon comprising at least two different graphene segments covalently bonded to each other, each graphene segment having a monodisperse fragment width, wherein At least one of the graphene fragments has a fragment width of 4 nm or less.

運用掃描穿隧顯微鏡(STM)測定片段寬度。依據J.Cai等人於Nature 466之第470至473頁(2010)中所說明之STM模擬校正表觀寬度得到有限端部半徑。依據Tersoff-Hamann法利用額外滾球演算法(rolling ball algorithm)模擬該等STM圖像,包括端部對表觀帶寬度之影響。藉由高斯及平面波方法針對特定的幾何形態求得介於費米能量(Fermi energy)及費米能量加給定樣本偏差之間之能態之積合密度。 Fragment width was determined using a scanning tunneling microscope (STM). The finite end radius is obtained according to the STM simulation corrected apparent width as described in J. Cai et al., Nature 466, pages 470 to 473 (2010). The STM images were simulated using the additional ball algorithm according to the Tersoff-Hamann method, including the effect of the end on the apparent band width. The Gaussian and plane wave methods are used to determine the integrated density of the energy states between Fermi energy and Fermi energy plus a given sample deviation for a particular geometry.

在本發明中所採用且如下文將更詳細地論述的自下而上合成方法之例中,可尤其藉由片段重複單元之結構(亦即,為該重複單元之來源之該(等)單體化合物之結構)及脫氫環化之程度進行片段寬度之調整,此等可使用掃描穿隧顯微鏡測得。原理上,則可基於此資訊基礎直接計算片段寬度。 In the example of a bottom-up synthesis method employed in the present invention and as will be discussed in more detail below, the structure of the repeating unit may be in particular (i.e., the source of the repeating unit) The structure of the bulk compound) and the degree of dehydrocyclization are adjusted for fragment width, which can be measured using a scanning tunneling microscope. In principle, the segment width can be calculated directly based on this information base.

與習知聚合物類似地,分段之石墨烯奈米帶之各片段具有其特定的重複單元。術語「重複單元」係指片段之一部分,該部分之重複將使得該等重複單元接連地沿著該片段鍵聯在一起而獲得全片段(除兩端以外)。不同近鄰片段具有不同的重複單元。 Similar to conventional polymers, each segment of the segmented graphene nanoribbon has its specific repeating unit. The term "repeating unit" refers to a portion of a fragment that will be repeated such that the repeating units are linked together in succession to obtain a full fragment (except for both ends). Different neighbor segments have different repeating units.

術語「單分散性片段寬度」意指片段具有超過其長度之 恆定寬度,若經由STM測量,標準偏差則小於0.30 nm,更佳小於0.15 nm,或甚至小於0.10 nm。 The term "monodisperse fragment width" means that the fragment has a length greater than its length. Constant width, if measured via STM, the standard deviation is less than 0.30 nm, more preferably less than 0.15 nm, or even less than 0.10 nm.

較佳地,分段之石墨烯奈米帶之各石墨烯片段具有4 nm或更小、更佳3 nm或更小、又更佳2 nm或更小之單分散性片段寬度。 Preferably, each graphene segment of the segmented graphene nanoribbon has a monodisperse fragment width of 4 nm or less, more preferably 3 nm or less, and still more preferably 2 nm or less.

如將更詳細地於下文所述,較佳地,不同近鄰石墨烯片段就其單分散性片段寬度而言係不同的。然而,於本發明中,亦可行的係兩或更多段近鄰石墨烯片段具有相等的單分散性片段寬度,但至少一種其他性能係不同的。 As will be described in more detail below, preferably, the different neighbor graphene segments are different in terms of their monodisperse fragment width. However, in the present invention, it is also possible to have two or more segments of the adjacent graphene fragments having equal monodisperse fragment widths, but at least one other property is different.

較佳地,各石墨烯片段具有衍生自至少一種經取代或未經取代多環芳族單體化合物、更佳至少一種經取代或未經取代多環芳族烴單體化合物及/或衍生自至少一種經取代或未經取代寡伸苯基芳族烴單體化合物之重複單元。 Preferably, each graphene fragment has a compound derived from at least one substituted or unsubstituted polycyclic aromatic monomer compound, more preferably at least one substituted or unsubstituted polycyclic aromatic hydrocarbon monomer, and/or derived from a repeating unit of at least one substituted or unsubstituted oligophenylene hydrocarbon monomer compound.

如將更詳細地於下文所述,藉由使至少一種經取代或未經取代多環芳族單體化合物及/或至少一種經取代或未經取代寡伸苯基芳族烴單體化合物聚合而獲得各石墨烯片段。為片段重複單元來源之經取代或未經取代多環芳族單體化合物包括(例如)萘、蒽、並四苯、並五苯、並六苯、並七苯、並八苯、並九苯、菲、聯二蒽(bisanthene)、聯三蒽(trisanthene)、稠二萘、芘、聯伸三苯、苯并[a]芘、苝、蔻,其等均可以是經取代或未經取代的。為片段重複單元來源之經取代或未經取代寡伸苯基芳族烴單體化合物包括(例如)聯苯、聯三苯、聯四苯、聯五苯、聯六苯、聯七苯、聯八苯,其等均可以是經取代或未經取代的。 Polymerization of at least one substituted or unsubstituted polycyclic aromatic monomer compound and/or at least one substituted or unsubstituted phenylene aromatic hydrocarbon monomer compound, as will be described in more detail below. Each graphene fragment was obtained. The substituted or unsubstituted polycyclic aromatic monomer compound derived from the repeating unit of the fragment includes, for example, naphthalene, anthracene, naphthacene, pentacene, hexacene, naphthacene, octaphenyl, pentacene , phenanthene, bisanthene, trisanthene, fused naphthalene, anthracene, extended triphenyl, benzo[ a ]pyrene, anthracene, anthracene, etc., all of which may be substituted or unsubstituted . Substituted or unsubstituted oligophenylene hydrocarbon monomer compounds derived from the repeating unit of the fragment include, for example, biphenyl, terphenyl, terphenyl, pentacene, hexaphenyl, hexaphenyl, hydrazine Octabenzene, which may be substituted or unsubstituted.

石墨烯片段之片段寬度亦可表示為石墨烯片段重複單元之跨片段寬度之環式芳香環的數量。較佳地,石墨烯片段之重複單元跨片段寬度具有17個或以下、更佳8個或以下環式芳香環。關於較佳之下限,較佳地,石墨烯片段之重複單元跨片段寬度具有至少2個或至少3個環式芳香環。 The fragment width of the graphene fragment can also be expressed as the number of cyclic aromatic rings across the width of the fragment of the graphene fragment repeating unit. Preferably, the repeating unit of the graphene fragment has a cyclic aromatic ring of 17 or less, more preferably 8 or less across the segment width. With respect to the preferred lower limit, preferably, the repeating unit of the graphene fragment has at least 2 or at least 3 cyclic aromatic rings across the width of the segment.

石墨烯片段亦可鍵聯至跨片段寬度不包含環式芳香環之至少一個寡伸苯基衍生之片段。 The graphene fragments may also be bonded to at least one oligophenyl-derived fragment that does not comprise a cyclic aromatic ring across the width of the fragment.

或者,根據習知概念,扶手椅型石墨烯片段之片段寬度亦可表示為跨片段寬度之二聚物線或碳原子對的數量N(K.Wakabayashi等人,Sci.Technol.Adv.Mater.11(2010)054504)。僅作為實例地,具有以並五苯為基礎之重複單元之全環式(亦即完全脫氫環化)非分段之石墨烯奈米帶會具有N=11之片段寬度的二聚物線。 Alternatively, according to conventional concepts, the fragment width of an armchair-type graphene fragment can also be expressed as the number of dimeric lines or pairs of carbon atoms across the width of the fragment (K. Wakabayashi et al., Sci. Technol. Adv. Mater. 11 (2010) 054504). By way of example only, a full-ring (ie, fully dehydrocyclized) non-segmented graphene nanoribbon having a pentacene-based repeating unit will have a dimer line with a fragment width of N=11. .

不同石墨烯片段之重複單元可具有N為3至38、更佳3至21或5至20之跨片段寬度之二聚物線。 The repeating unit of the different graphene fragments may have a dimer line having a cross-fragment width of N of from 3 to 38, more preferably from 3 to 21 or from 5 to 20.

如上所概述,分段之石墨烯奈米帶包括至少兩段不同的石墨片段,此意指至少兩段石墨烯片段於其重複單元上顯示不同。 As outlined above, the segmented graphene nanobelt comprises at least two distinct segments of graphite, which means that at least two segments of the graphene segment exhibit differences on their repeating units.

較佳地,不同石墨烯片段之重複單元至少於以下選自片段寬度、連接至重複單元之取代基、芳香環成環程度或脫氫環化程度及/或環式芳香環數量之特性中之一或多者上顯示不同。 Preferably, the repeating unit of the different graphene fragments is at least selected from the group consisting of a fragment width, a substituent attached to the repeating unit, a degree of aromatic ring ring formation or a degree of dehydrocyclization, and/or a number of cyclic aromatic rings. One or more displays differently.

成環程度係指示近鄰多環芳族及/或寡伸苯基芳族基經脫氫環化而稠合在一起之程度。如將更詳細地於下文所 述,若在石墨烯奈米帶之特定區域中發生完全脫氫環化,則該區域將呈現為最大程度成環之片段,然近鄰片段較佳因為該區域中發生部分脫氫環化而具有較低程度之成環。 The degree of ring formation indicates the degree to which the adjacent polycyclic aromatic and/or oligophenylene aromatic groups are fused together by dehydrocyclization. As will be more detailed below It is stated that if complete dehydrocyclization occurs in a specific region of the graphene nanobelt, the region will appear as a segment with the greatest degree of ring formation, and the neighboring segment is preferred because of partial dehydrocyclization in the region. A lower degree of looping.

於本發明中,可行的係不同石墨烯片段之重複單元衍生自同一經取代或未經取代多環芳族單體化合物及/或寡伸苯基芳族烴單體化合物,但芳香環之成環程度(即脫氫環化程度)不同。由於不同石墨烯片段之脫氫環化程度不同,則較佳地,該等片段之寬度亦不同。 In the present invention, it is possible that repeating units of different graphene fragments are derived from the same substituted or unsubstituted polycyclic aromatic monomer compound and/or oligophenylene aromatic hydrocarbon monomer compound, but the aromatic ring is formed. The degree of ring (ie, the degree of dehydrocyclization) is different. Since the degree of dehydrocyclization of the different graphene fragments is different, preferably, the widths of the fragments are also different.

於本發明中,亦可行的係不同重複單元及因此不同片段具有相同的成環程度(例如,該等片段完全脫氫環化),但片段寬度不同。此可藉由使用不同多環芳族單體化合物及/或寡伸苯基芳族烴單體化合物,或藉由使兩先質石墨烯奈米帶在局部化區域上稠合在一起(例如,經由近鄰石墨烯奈米帶中彼此至少部分平行定向之周邊芳香環成環)而在最終分段之石墨烯奈米帶中呈現較高寬度片段而達成,如將更詳細地於下文進行說明。 In the present invention, it is also possible to have different repeating units and thus different fragments having the same degree of loop formation (for example, the fragments are completely dehydrocyclized), but the fragment widths are different. This can be achieved by using different polycyclic aromatic monomer compounds and/or oligophenylene aromatic hydrocarbon monomer compounds, or by condensing two precursor graphene nanoribbons on localized regions (eg Achieved by presenting a higher width segment in the final segmented graphene nanoribbon via a neighboring aromatic ring that is oriented at least partially parallel to each other in the adjacent graphene nanoribbon), as will be explained in more detail below .

於本發明中,亦可行的係不同片段之重複單元所連接之取代基不同,然脫氫環化程度可以相同或可以不同。此可藉由使用具有不同之連接至該(等)芳香環的取代基之多環芳族單體化合物及/或寡伸苯基芳族烴單體化合物來達成。 In the present invention, the substituents to which the repeating units of different fragments are linked may be different, but the degree of dehydrocyclization may be the same or may be different. This can be achieved by using a polycyclic aromatic monomer compound having a different substituent attached to the (other) aromatic ring and/or an oligophenylene aromatic hydrocarbon monomer compound.

較佳地,分段之石墨烯奈米帶之片段各自具有0.25至250 nm、更佳1至50 nm之長度,及/或分段之石墨烯奈米帶之總長度較佳為至少4 nm、更佳至少20 nm且可以高達 1000 nm、更佳高達300 nm。使用掃描穿隧顯微鏡(STM)來測定片段長度及石墨烯奈米帶長度。 Preferably, the segments of the segmented graphene nanoribbons each have a length of from 0.25 to 250 nm, more preferably from 1 to 50 nm, and/or the total length of the segmented graphene nanoribbons is preferably at least 4 nm. , better at least 20 nm and can be as high as 1000 nm, more preferably up to 300 nm. Scanning tunneling microscopy (STM) was used to determine fragment length and graphene nanobelt length.

於一較佳實施例中,分段之石墨烯奈米帶之所有片段均呈線性配置。 In a preferred embodiment, all segments of the segmented graphene nanoribbon are linearly arranged.

為了提供此種線性配置,分段之石墨烯奈米帶之各片段可共價鍵聯至多達兩近鄰片段。 To provide such a linear configuration, each segment of the segmented graphene nanoribbon can be covalently bonded to up to two neighboring segments.

於本發明中,亦可行的係分段之石墨烯奈米帶之至少一片段係共價鍵聯至少三段近鄰片段。例示性實施例更詳細地述於下文,參見:例如,以式XI所示之結構。 In the present invention, at least one fragment of the segmented graphene nanoribbon is also covalently bonded to at least three adjacent segments. The illustrative embodiments are described in more detail below, see, for example, the structure shown in Formula XI.

於一較佳實施例中,此兩或更多段不同片段具有衍生自經取代或未經取代蒽單體化合物之重複單元。 In a preferred embodiment, the two or more different segments have repeating units derived from a substituted or unsubstituted oxime monomer compound.

較佳地,包括具有以蒽為基礎之重複單元之兩或更多段石墨烯片段之分段之石墨烯奈米帶具有以下結構式Ia: 其限制條件為m、x、n、y、o、z及p中之至少兩者1,且m+x+n+y+o+z+p10,更佳地,2500m+x+n+y+o+z+p50,及其中: X彼此獨立地為H、鹵素、SH、SR3、OH、OR3、OSO2R3、(SO)R3、(SO2)R3、NR1R2、NO2、POR3R3、PO(OR3)R3、PO(OR3)2、B(R3)2、B(OR3)2、(CO)R3、(CO)OR3,較佳為H或鹵素,更佳為H;Y彼此獨立地為H或在近鄰重複單元之間兩Y共同形成直接鍵;R彼此獨立地為氫;未經取代或經一或多個OH、C1-C4烷氧基、苯基或CN取代之直鏈或支鏈或環狀C1-C12烷基;間雜一或多個非連續O之C2-C12烷基;鹵素;OH;OR3;SR3;CN;NO2;NR1R2;(CO)R3;(CO)OR3;O(CO)OR3;O(CO)NR1R2;O(CO)R3;C1-C12烷氧基;C1-C12烷硫基;(C1-C6烷基)-NR7R8;或-O-(C1-C6烷基)NR1R2;芳基或雜芳基(其中芳基較佳為苯基、聯苯基、萘基或蒽基,其等均係未經取代或經一或多個C1-C4-烷基、CN、OR3、SR3、CH2OR3、(CO)OR3、(CO)NR1R2或鹵素取代);或兩R與其等所連接的碳原子共同形成5至8員環或雜環;R1與R2彼此獨立地為氫、直鏈或支鏈C1-C6烷基或苯基,或R1及R2與其等所鍵結之氮原子共同形成選自以下之基團:;R3為H、C1-C12烷基、未經取代或經一或多個C1-C4烷基、苯基、鹵素、C1-C4烷氧基或C1-C4烷硫基取代之苯基。 Preferably, the graphene nanoribbon comprising a segment of two or more segments of graphene having fluorene-based repeating units has the following structural formula Ia: The constraint is at least two of m, x, n, y, o, z, and p 1, and m+x+n+y+o+z+p 10, better, 2500 m+x+n+y+o+z+p 50, and wherein: X is independently H, halogen, SH, SR 3 , OH, OR 3 , OSO 2 R 3 , (SO) R 3 , (SO 2 ) R 3 , NR 1 R 2 , NO 2 , POR 3 R 3 , PO(OR 3 )R 3 , PO(OR 3 ) 2 , B(R 3 ) 2 , B(OR 3 ) 2 , (CO)R 3 , (CO)OR 3 , preferably H Or halogen, more preferably H; Y independently of each other is H or a direct bond between two adjacent Y repeating units; R is independently hydrogen; unsubstituted or via one or more OH, C 1 -C a linear or branched or cyclic C 1 -C 12 alkyl group substituted with alkoxy, phenyl or CN; a C 2 -C 12 alkyl group having one or more discontinuous O; halogen; OH; OR 3 ; SR 3 ; CN; NO 2 ; NR 1 R 2 ; (CO) R 3 ; (CO)OR 3 ; O(CO)OR 3 ; O(CO)NR 1 R 2 ; O(CO)R 3 ; 1 -C 12 alkoxy; C 1 -C 12 alkylthio; (C 1 -C 6 alkyl)-NR 7 R 8 ; or -O-(C 1 -C 6 alkyl)NR 1 R 2 ; Aryl or heteroaryl (wherein the aryl group is preferably phenyl, biphenyl, naphthyl or anthracenyl, all of which are unsubstituted or via one or more C 1 -C 4 -alkyl, CN, oR 3, SR 3, CH 2 oR 3, substituted (CO) oR 3, (CO ) NR 1 R 2 or halogen); or two R attached thereto, etc. Carbon atoms together form a 5-8 or heterocyclic ring; R 1 and R 2 are each independently hydrogen, a linear or branched C 1 -C 6 alkyl or phenyl, or R 1 and R 2 are bonded thereto other The nitrogen atoms of the junction together form a group selected from the group consisting of: , or ; R 3 is H, C 1 -C 12 alkyl, unsubstituted or via one or more C 1 -C 4 alkyl, phenyl, halogen, C 1 -C 4 alkoxy or C 1 -C 4 Alkylthio substituted phenyl.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為 5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有以蒽為基礎之重複單元之兩或更多片段之分段之石墨烯奈米帶具有以下結構式Ib: 其限制條件為x、n、y、o、z及p中之至少兩者1,且x+n+y+o+z+p10,更佳地,2500x+n+y+o+z+p50,及其中:X、Y及R與以上針對式Ia所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more segments of the ruthenium-based repeating unit has the following structural formula Ib: The constraint is at least two of x, n, y, o, z, and p 1, and x+n+y+o+z+p 10, better, 2500 x+n+y+o+z+p 50, and wherein: X, Y and R are the same as defined above for formula Ia.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有以蒽為基礎之重複單元之兩或更多片段之分段之石墨烯奈米帶具有以下結構式Ic: 其限制條件為y、o、z及p中之至少兩者1,且y+o+z+p10,更佳地,2500y+o+z+p50,及其中:X、Y及R係與以上針對式Ia所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more segments of the fluorene-based repeating unit has the following structural formula Ic: The constraint is at least two of y, o, z, and p 1, and y+o+z+p 10, better, 2500 y+o+z+p 50, and wherein: X, Y and R are as defined above for formula Ia.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有以蒽為基礎之重複單元之兩或更多片段之分段之石墨烯奈米帶具有以下結構式Id: 其限制條件為m、x及n中之至少兩者1,且 m+x+n10,更佳地,2500m+x+n50,及其中:X及R係與以上針對式Ia所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising a segment having two or more segments of the hydrazine-based repeating unit has the following structural formula Id: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 50, and wherein: X and R are as defined above for formula Ia.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有以蒽為基礎之重複單元之兩或更多片段之分段之石墨烯奈米帶具有以下結構式Ie: 其限制條件為m、z及p中之至少兩者1,其中m+z+p10,更佳地,2500m+z+p50,及其中:X及R係與以上針對式Ia所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more segments of the hydrazine-based repeating unit has the following structural formula Ie: The constraint is at least two of m, z and p 1, where m+z+p 10, better, 2500 m+z+p 50, and wherein: X and R are as defined above for formula Ia.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有以蒽為基礎之重複單元之兩或更多片段之分段之石墨烯奈米帶具有以下結構式Ih: 其中:m+n10,更佳地,2500m+n50,及其中:R1及R2係與以上在R1與R2不同之限制條件下所定義的R相同,及X係與以上所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more segments of the fluorene-based repeating unit has the following structural formula Ih: Of which: m+n 10, better, 2500 m+n 50, and wherein: R1 and R2 are the same as R defined above under the different conditions of R1 and R2, and X is the same as defined above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

此兩或更多段不同石墨烯片段亦可具有衍生自經取代或未經取代並五苯單體化合物之重複單元。 The two or more different graphene fragments may also have repeating units derived from a substituted or unsubstituted pentacene monomer compound.

於一較佳實施例中,包括具有衍生自並五苯單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式II: 其限制條件為m、x、n、y、o、z及p中之至少兩者1,且m+x+n+y+o+z+p10,更佳地,2500m+x+n+y+o+z+p50,及其中X、Y及R具有如以上針對式Ia所定義之相同含義。 In a preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a pentacene monomer compound has the following structural formula II: The constraint is at least two of m, x, n, y, o, z, and p 1, and m+x+n+y+o+z+p 10, better, 2500 m+x+n+y+o+z+p 50, and wherein X, Y and R have the same meanings as defined above for formula Ia.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

根據另一較佳實施例,包括具有衍生自並五苯單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式III: 其中:m+n10,更佳地,2500m+n50,及其中:R1及R2係與以上在R1與R2不同之限制條件下所定義之R相同,及X係與以上所定義相同。 According to another preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a pentacene monomer compound has the following structural formula III: Of which: m+n 10, better, 2500 m+n 50, and wherein: R1 and R2 are the same as R defined above under the different conditions of R1 and R2, and X is the same as defined above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於本發明中,亦可行的係此兩或更多段不同石墨烯片段具有衍生自經取代或未經取代蒽及經取代或未經取代並五苯單體化合物之重複單元。 In the present invention, it is also possible that the two or more different graphene fragments have repeating units derived from a substituted or unsubstituted anthracene and a substituted or unsubstituted pentacene monomer compound.

根據一較佳實施例,包括具有衍生自蒽及並五苯單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式IV: 其中: m+n10,更佳地,2500m+n50,及其中:R1及R2係與以上在R1與R2不同之限制條件下所定義之R相同,及X係與以上所定義相同。 According to a preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from hydrazine and pentacene monomer compounds has the following structural formula IV: Where: m+n 10, better, 2500 m+n 50, and wherein: R1 and R2 are the same as R defined above under the different conditions of R1 and R2, and X is the same as defined above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

此兩或更多段不同石墨烯片段亦可具有衍生自經取代及/或未經取代萘單體化合物之重複單元。 The two or more different graphene fragments may also have repeating units derived from a substituted and/or unsubstituted naphthalene monomer compound.

於一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式V: 其限制條件為m、x及n中之至少兩者1,且m+x+n10,更佳地,2500m+x+n50,及其中X、Y及R具有如上所指明之該相同含義。 In a preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula V: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 50, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為 5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式VI: 其限制條件為m、x及n中之至少兩者1,且m+x+n10,更佳地,2500m+x+n35,及其中X、Y及R具有如上指明之該相同含義。 In another preferred embodiment, a graphene nanoribbon comprising a segment having two or more different segments of a repeating unit derived from a naphthalene monomer compound has the following structural formula VI: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 35, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式VII: 其限制條件為m、x及n中之至少兩者1,且 m+x+n10,更佳地,2500m+x+n30,及其中X、Y及R具有如上指明之該相同含義。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula VII: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 30, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式VIII: 其限制條件為m、x及n中之至少兩者1,且m+x+n10,更佳地,2500m+x+n25,及其中X、Y及R具有如上指明之該相同含義。 In another preferred embodiment, the graphene nanoribbon comprising a segment having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula VIII: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 25, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式IX: 其限制條件為m、x及n中之至少兩者1,且m+x+n10,更佳地,2500m+x+n30,及其中X、Y及R具有如上指明之該相同含義。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula IX: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 30, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式X: 其限制條件為m、x及n中之至少兩者1,且m+x+n10,更佳地,2500m+x+n20,及其中X、Y及R具有如上指明之該相同含義。 In another preferred embodiment, the graphene nanoribbon comprising a segment having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula X: The constraint is at least two of m, x and n 1, and m+x+n 10, better, 2500 m+x+n 20, and wherein X, Y and R have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括具有衍生自萘單體化合物之 重複單元之兩或更多段不同片段之分段之石墨烯奈米帶具有以下結構式XIII: 其中:m+n10,更佳地,2500m+n50,及其中:R1及R2係與如上在R1與R2不同之限制條件下所定義之R相同,及X係與以上所定義相同。 In another preferred embodiment, the graphene nanoribbon comprising segments having two or more different segments of repeating units derived from a naphthalene monomer compound has the following structural formula XIII: Of which: m+n 10, better, 2500 m+n 50, and wherein: R1 and R2 are the same as R as defined above under the constraints of R1 and R2, and X is as defined above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於本發明中,可行的係該等石墨烯片段中之至少一者跨片段寬度具有含N1個二聚物線之經取代或未經取代重複單元,及該等石墨烯片段中之至少一者跨片段寬度具有含N2個二聚物線之重複單元,其中N1=5至13(更佳地,N1=5、7或11),及N2=k×N1,且k=2、3或4(更佳為2或3)。 In the present invention, it is possible that at least one of the graphene fragments has a substituted or unsubstituted repeating unit having N1 dimer lines across a fragment width, and at least one of the graphene fragments The cross-fragment width has repeating units containing N2 dimer lines, wherein N1=5 to 13 (more preferably, N1=5, 7 or 11), and N2=k×N1, and k=2, 3 or 4 (more preferably 2 or 3).

於一較佳實施例中,分段之石墨烯奈米帶係包括至少一段具有N1=5之重複單元之片段及至少一段具有N2=10、15 或20之重複單元之片段(其中N1與N2為跨片段寬度之二聚物線的計數)。 In a preferred embodiment, the segmented graphene nanobelt comprises at least one segment having a repeating unit of N1=5 and at least one segment having N2=10,15 Or a fragment of a repeating unit of 20 (wherein N1 and N2 are counts of dimeric lines across the width of the fragment).

較佳地,包括至少一段具有N1=5之經取代或未經取代重複單元之片段及至少一段具有N2=10及/或N2=15之經取代或未經取代重複單元之片段之分段之石墨烯奈米帶具有如下顯示之化學結構式XI: 其限制條件為m、p、q、r、s、u、v、w及x中之至少一者、至少兩者或至少三者1,且n、o及t中之至少一者1,且m+n+o+p+q+r+s+t+u+v+w+x10,更佳地,2500m+n+o+p+q+r+s+t+u+v+w+x25,及其中X及Y具有如上指明之該相同含義。 Preferably, comprising at least one segment of a substituted or unsubstituted repeating unit having N1=5 and at least one segment of a fragment having a substituted or unsubstituted repeating unit of N2=10 and/or N2=15 The graphene nanobelt has the chemical structure XI shown below: The constraint is at least one of at least one of m, p, q, r, s, u, v, w, and x, or at least three 1, and at least one of n, o, and t 1, and m+n+o+p+q+r+s+t+u+v+w+x 10, better, 2500 m+n+o+p+q+r+s+t+u+v+w+x 25, and wherein X and Y have the same meaning as indicated above.

較佳地,n、o及t中之至少一者1,且m、p、q、r、s、u、v、w及x中之至少兩者1,因此該等石墨烯片段中之至少一者係共價鍵聯至兩或更多段近鄰片段。 Preferably, at least one of n, o and t 1, and at least two of m, p, q, r, s, u, v, w, and x 1. At least one of the graphene fragments is covalently bonded to two or more of the neighboring fragments.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳 為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於另一較佳實施例中,包括至少一段具有N1=5之經取代或未經取代重複單元之片段及至少一段具有N2=10之經取代或未經取代重複單元之片段之分段之石墨烯奈米帶具有如下顯示之化學結構式XII: 其限制條件為p、m、q及o中之至少一者、至少兩者或至少三者、或甚至全部係1;且m+n+o+p+q10,更佳地,2500m+n+o+p+q25,及其中X及Y具有如上指明之該相同含義。 In another preferred embodiment, comprising at least one segment of a segment having substituted or unsubstituted repeating units of N1=5 and at least one segment of graphite having a segment of substituted or unsubstituted repeating units having N2=10 The olefinic band has the chemical structure XII shown below: The constraint is at least one of at least two, or at least three, or even all of p, m, q, and o 1; and m+n+o+p+q 10, better, 2500 m+n+o+p+q 25, and wherein X and Y have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

根據另一較佳實施例,分段之石墨烯奈米帶係包括至少 一段具有N1=7之經取代或未經取代重複單元之片段及至少一段具有N2=14及/或21之經取代或未經取代重複單元之片段。 According to another preferred embodiment, the segmented graphene nanobelt comprises at least a fragment of a substituted or unsubstituted repeating unit having N1=7 and at least one fragment having a substituted or unsubstituted repeating unit of N2=14 and/or 21.

於一較佳實施例中,包括至少一段具有N1=7之經取代或未經取代重複單元之片段及至少一段具有N2=14及/或21之經取代或未經取代重複單元之片段之分段之石墨烯奈米帶具有如下顯示之化學結構式If。 In a preferred embodiment, the method comprises at least one segment of a substituted or unsubstituted repeating unit having N1=7 and at least one segment of a substituted or unsubstituted repeating unit having N2=14 and/or 21 The graphene nanobelt of the segment has the chemical structural formula If shown below.

其限制條件為m、p、q、w、x、r、s、u及v中之至少一者、至少兩者或至少三者1,且n、o及t中之至少一者1,且m+n+o+p+q+r+s+t+u+v+w+x10,更佳地,2500m+n+o+p+q+r+s+t+u+v+w+x25,及X及Y具有如上指明之該相同含義。 The constraint is at least one of at least one of m, p, q, w, x, r, s, u, and v, or at least three 1, and at least one of n, o, and t 1, and m+n+o+p+q+r+s+t+u+v+w+x 10, better, 2500 m+n+o+p+q+r+s+t+u+v+w+x 25, and X and Y have the same meaning as indicated above.

較佳地,n、o及t中之至少一者1,且m、p、q、r、s、u、v、w及x中之至少兩者1,因此該等石墨烯片段中之至少一者係共價鍵聯至兩或更多段近鄰石墨烯片段。 Preferably, at least one of n, o and t 1, and at least two of m, p, q, r, s, u, v, w, and x 1. At least one of the graphene fragments is covalently bonded to two or more of the adjacent graphene fragments.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

於一較佳實施例中,包括至少一段具有N1=7之經取代或未經取代重複單元之片段及至少一段具有N2=14之經取代或未經取代重複單元之片段之分段之石墨烯奈米帶具有如下顯示之化學結構式Ig。 In a preferred embodiment, comprising at least one segment of a substituted or unsubstituted repeating unit having N1=7 and at least one segment of graphene having a segment of a substituted or unsubstituted repeating unit having N2=14 The nanobelt has the chemical structural formula Ig shown below.

其限制條件為m、p、q及o中之至少一者、至少兩者或至少三者、或甚至全部係1,其中m+n+o+p+q+r+s+t+u+v+w+x10,更佳地,2500m+n+o+p+q+r+s+t+u+v+w+x25,其中X及Y具有如上指明之該相同含義。 The constraint is at least one of m, p, q, and o, at least two or at least three, or even all 1, where m+n+o+p+q+r+s+t+u+v+w+x 10, better, 2500 m+n+o+p+q+r+s+t+u+v+w+x 25, wherein X and Y have the same meaning as indicated above.

如上指明,a較佳為1至50。更佳地,a為1至10,又更佳為1至5。若2al(其中l較佳為50,更佳為10,又更佳為 5,如上指明),該分段之石墨烯奈米帶包括l個結構部分a1,a2,.......,alAs indicated above, a is preferably from 1 to 50. More preferably, a is from 1 to 10, and more preferably from 1 to 5. If 2 a l (where l is preferably 50, more preferably 10, still more preferably 5, as indicated above), the segmented graphene nanoribbon includes 1 structural part a 1 , a 2 , ... ., a l .

較佳地,分段之石墨烯奈米帶包括至少一個異質接面。 Preferably, the segmented graphene nanobelt comprises at least one heterojunction.

異質接面產生於其等電子特性不同(例如不同能帶隙)之兩種共價鍵聯石墨烯片段之界面之處。 The heterojunction occurs at the interface of two covalently bonded graphene fragments having different electronic properties (eg, different energy band gaps).

根據另一態樣,本發明提供一種用於製造如上定義之分段之石墨烯奈米帶之方法,該方法包括:(a)使至少一種多環芳族單體化合物及/或寡伸苯基芳族烴單體化合物沉積於固體基材上,(b)使多環芳族及/或寡伸苯基芳族烴單體化合物聚合以於該固體基材之表面上形成至少一種聚合物,此至少一種聚合物較佳係直鏈的,(c)至少部分地脫氫環化步驟(b)之此一或多種聚合物。 According to another aspect, the present invention provides a method for producing a segmented graphene nanoribbon as defined above, the method comprising: (a) at least one polycyclic aromatic monomer compound and/or oligobenzene a base aromatic hydrocarbon monomer compound deposited on a solid substrate, (b) polymerizing a polycyclic aromatic and/or oligophenylene aromatic hydrocarbon monomer compound to form at least one polymer on the surface of the solid substrate Preferably, the at least one polymer is linear, (c) at least partially dehydrocycling the one or more polymers of step (b).

步驟(a)之該多環芳族單體(較佳是指多環芳族烴單體化合物)及/或寡伸苯基芳族烴單體化合物可以是於適宜反應條件下經歷聚合成為聚合物(較佳係直鏈聚合物)之任何化合物。可反應生成聚合物之該多環芳族單體或寡伸苯基芳族烴單體化合物通常為擅長該技術者所知。 The polycyclic aromatic monomer (preferably, a polycyclic aromatic hydrocarbon monomer compound) and/or the oligophenylene aromatic hydrocarbon monomer compound of the step (a) may be subjected to polymerization to polymerization under suitable reaction conditions. Any compound of the material (preferably a linear polymer). The polycyclic aromatic monomer or oligophenylene aromatic hydrocarbon monomer compound which can react to form a polymer is generally known to those skilled in the art.

較佳地,該多環芳族單體及/或寡伸苯基芳族烴單體化合物係經至少兩個脫離基取代,更佳具有較佳為Br及/或I之至少兩個鹵取代基,此為隨後的聚合反應提供反應部位。 Preferably, the polycyclic aromatic monomer and/or oligophenylene aromatic hydrocarbon monomer compound is substituted with at least two leaving groups, more preferably at least two halogens, preferably Br and/or I. Base, which provides a reaction site for subsequent polymerization.

該多環芳族單體化合物可例如為諸如彼等如以下所示式1-3之以蒽為基礎之化合物、諸如如以下所示式4者之以聯 二蒽為基礎之化合物、或諸如如以下所示式5者之以聯三蒽為基礎之化合物。多種該等化合物可商業購得或可由擅長該技術者依據文獻程序製得。亦可參考於上文在論述為石墨烯片段重複單元來源之化合物時已述及之多環芳族單體化合物。 The polycyclic aromatic monomer compound may, for example, be a compound such as those of the formula 1-3 shown below, such as the formula 4 shown below. A diterpene-based compound, or a compound based on a triterpenoid such as those shown in Formula 5 below. A variety of such compounds are commercially available or can be made by those skilled in the art in light of the literature. Reference may also be made to the polycyclic aromatic monomer compounds which have been described above in connection with the compounds of the graphene fragment repeating unit source.

於式1至5中,較佳地:X彼此獨立地為脫離基,較佳為Br或I;R彼此獨立地為氫;未經取代或經一或多個OH、C1-C4烷氧基、苯基或CN取代之直鏈或支鏈或環狀C1-C12烷基;間雜一或多個非連續O之C2-C12烷基;鹵素;OH;OR3;SR3;CN;NO2;NR1R2;(CO)R3;(CO)OR3;O(CO)OR3;O(CO)NR1R2;O(CO)R3;C1-C12烷氧基;C1-C12烷硫基;(C1-C6烷基)-NR7R8;或-O-(C1-C6烷基)NR1R2;芳基或雜芳基(其中芳基較佳為苯基、聯苯基、萘基或蒽基,其等均為未經取代或經一或多個C1-C4- 烷基、CN、OR3、SR3、CH2OR3、(CO)OR3、(CO)NR1R2或鹵素取代);或兩R與其等所連接之碳原子共同形成5至8員環或雜環;R1與R2彼此獨立地為氫、直鏈或支鏈C1-C6烷基或苯基,或R1及R2與其等所鍵結之氮原子共同形成選自之基團;R3為H、C1-C12烷基、未經取代或經一或多個C1-C4烷基、苯基、鹵素、C1-C4烷氧基或C1-C4烷硫基取代之苯基。 In Formulas 1 to 5, preferably, X is independently of each other a leaving group, preferably Br or I; R is independently hydrogen; unsubstituted or via one or more OH, C 1 -C 4 alkane a linear or branched or cyclic C 1 -C 12 alkyl group substituted with an oxy group, a phenyl group or a CN; a C 2 -C 12 alkyl group having one or more discontinuous O; halogen; OH; OR 3 ; 3 ;CN;NO 2 ;NR 1 R 2 ;(CO)R 3 ;(CO)OR 3 ;O(CO)OR 3 ;O(CO)NR 1 R 2 ;O(CO)R 3 ;C 1 - C 12 alkoxy; C 1 -C 12 alkylthio; (C 1 -C 6 alkyl)-NR 7 R 8 ; or -O-(C 1 -C 6 alkyl)NR 1 R 2 ; aryl Or a heteroaryl group (wherein the aryl group is preferably a phenyl group, a biphenyl group, a naphthyl group or a fluorenyl group, which are all unsubstituted or one or more C 1 -C 4 -alkyl groups, CN, OR 3 , SR 3 , CH 2 OR 3 , (CO)OR 3 , (CO)NR 1 R 2 or halogen substitution); or two R and its attached carbon atom together form a 5 to 8 membered ring or heterocyclic ring; R 1 And R 2 are independently of each other hydrogen, a linear or branched C 1 -C 6 alkyl group or a phenyl group, or R 1 and R 2 are bonded together with a nitrogen atom to which they are bonded, and are selected from the group consisting of , or a group; R 3 is H, C 1 -C 12 alkyl, unsubstituted or via one or more C 1 -C 4 alkyl, phenyl, halogen, C 1 -C 4 alkoxy or C 1 -C 4 alkylthio substituted phenyl.

單體化合物亦可為以並五苯為基礎之化合物,諸如如式6及7之化合物。此類型化合物可由擅長該技術者依據文獻程序製得。 The monomeric compound may also be a pentacene-based compound such as a compound of formulas 6 and 7. This type of compound can be made by a person skilled in the art in accordance with a literature procedure.

X及R具有如以上針對式1至5所定義之該相同含義。 X and R have the same meaning as defined above for Formulas 1 to 5.

該單體化合物亦可為以菲為基礎之化合物,諸如如式89之化合物。此類型單體述於(例如)US 7,968,872中。 The monomeric compound may also be a phenanthrene-based compound such as a compound of formulas 8 and 9 . Monomers of this type are described, for example, in US 7,968,872.

X及R具有如以上針對式1至5所定義之該相同含義。 X and R have the same meaning as defined above for Formulas 1 to 5.

該單體化合物亦可為諸如述於(例如)專利申請案EP 11 186 716.4及EP 11 186 659.6中之寡伸苯基芳族烴化合物,諸如以下顯示之化合物100至104。 The monomeric compound may also be an oligophenylene aromatic hydrocarbon compound such as described in, for example, patent application EP 11 186 716.4 and EP 11 186 659.6, such as compounds 100 to 104 shown below.

其中:X及R具有如以上針對式1至5所定義之該相同含義。 Wherein: X and R have the same meaning as defined above for Formulas 1 to 5.

其中:可相同或可不同之R1、R2及R3為H、鹵素、-OH、-NH2、-CN、-NO2、直鏈或支鏈之飽和或不飽和C1-C40烴殘基,其可1-至5-倍地經鹵素(F、Cl、Br、I)、-OH、-NH2、-CN及/或-NO2取代,及其中一或多個CH2-基可經由-O-、-S-、-C(O)O-、-O-C(O)-、-C(O)-、-NH-或-NR-取代,其中R為視需要經取代之C1-C40烴殘基,或視需要經取代之芳基、烷基芳基或烷氧基芳基殘基,X為鹵素。 Wherein: R1, R2 and R3 which may be the same or different are H, halogen, -OH, -NH 2 , -CN, -NO 2 , linear or branched saturated or unsaturated C 1 -C 40 hydrocarbon residue , which may be substituted 1- to 5-fold by halogen (F, Cl, Br, I), -OH, -NH 2 , -CN and/or -NO 2 , and one or more of the CH 2 - groups may be Substituted by -O-, -S-, -C(O)O-, -OC(O)-, -C(O)-, -NH- or -NR-, wherein R is optionally substituted C 1 a -C 40 hydrocarbon residue, or an optionally substituted aryl, alkylaryl or alkoxyaryl residue, and X is a halogen.

其中:可相同或可不同之R1、R2及R3為H、鹵素、-OH、-NH2、-CN、-NO2、直鏈或支鏈飽和或不飽和C1-C40烴殘基,其可1-至5-倍地經鹵素(F、Cl、Br、I)、-OH、-NH2、-CN及/或-NO2取代,及其中一或多個CH2-基可經-O-、-S-、-C(O)O-、-O-C(O)-、-C(O)-、-NH-或-NR-取代,其中R為視需要經取代之C1-C40烴殘基或視需要經取代之芳基、烷基芳基或烷氧基芳基殘基,X為鹵素及Y為H,或X為H及Y為鹵素。 Wherein: R1, R2 and R3 which may be the same or different are H, halogen, -OH, -NH 2 , -CN, -NO 2 , linear or branched saturated or unsaturated C 1 -C 40 hydrocarbon residue, It may be substituted 1- to 5-fold by halogen (F, Cl, Br, I), -OH, -NH 2 , -CN and/or -NO 2 , and one or more of the CH 2 - groups may be -O-, -S-, -C(O)O-, -OC(O)-, -C(O)-, -NH- or -NR-substitution, wherein R is optionally substituted C 1 - a C 40 hydrocarbon residue or an optionally substituted aryl, alkylaryl or alkoxyaryl residue, X is a halogen and Y is H, or X is H and Y is a halogen.

該單體化合物亦可為以並四苯為基礎之化合物,諸如彼等如式10至13者。此類型化合物可由擅長該技術者依據文獻程序製得。 The monomeric compound may also be a compound based on naphthacene, such as those of formulas 10 to 13. This type of compound can be made by a person skilled in the art in accordance with a literature procedure.

其中:X及R具有如以上針對式1至5所定義之該相同含義。 Wherein: X and R have the same meaning as defined above for Formulas 1 to 5.

該單體化合物亦可為以萘為基礎之化合物,諸如彼等如式14至22者。此類型化合物可由擅長該技術者依據文獻程序製得。 The monomeric compound may also be a naphthalene based compound such as those of formulas 14 to 22. This type of compound can be made by a person skilled in the art in accordance with a literature procedure.

其中:X及R具有如以上針對式1至5所定義之該相同含義。 Wherein: X and R have the same meaning as defined above for Formulas 1 to 5.

如上指明,步驟(a)包括使至少一種多環芳族單體或寡伸苯基芳族烴單體化合物沉積於固體基材上。 As indicated above, step (a) comprises depositing at least one polycyclic aromatic monomer or oligophenylene aromatic hydrocarbon monomer compound on a solid substrate.

可使用於其表面上能使多環芳族單體或寡伸苯基芳族烴單體化合物沉積且隨後聚合成直鏈聚合物之任何固體基材。較佳地,該固體基材具有平坦表面。 Any solid substrate on which a polycyclic aromatic monomer or an oligophenylene aromatic hydrocarbon monomer compound can be deposited and subsequently polymerized into a linear polymer can be used. Preferably, the solid substrate has a flat surface.

單體化合物所沉積之該平坦表面可以是諸如Au、Ag、Cu、Al、W、Ni、Pt或Pd表面(其可為重建或鄰近的)之金屬表面,或該表面可以是該等金屬之合金。該表面可以是完全平坦或圖案化或梯狀。該等圖案化或梯狀表面及其製造方法為擅長該技術者所知。於圖案化表面上,石墨烯奈米帶之生長可藉由表面圖案導向。 The flat surface deposited by the monomeric compound may be a metal surface such as Au, Ag, Cu, Al, W, Ni, Pt or Pd surface (which may be reconstructed or adjacent), or the surface may be such a metal alloy. The surface can be completely flat or patterned or ladder shaped. Such patterned or laddered surfaces and methods of making same are known to those skilled in the art. On the patterned surface, the growth of the graphene nanoribbons can be guided by a surface pattern.

該表面亦可為諸如氧化矽、氮氧化矽、矽酸鉿、氮化鉿矽酸鹽(HfSiON)、矽酸鋯、二氧化鉿及二氧化鋯、或氧化鋁、氧化銅、氧化鐵之金屬氧化物表面。 The surface may also be a metal such as cerium oxide, cerium oxynitride, cerium lanthanum hydride, cerium nitride (HfSiON), zirconium silicate, cerium oxide and zirconium dioxide, or aluminum oxide, copper oxide or iron oxide. Oxide surface.

該表面亦可由諸如矽、鍺、砷化鎵、碳化矽及二硫化鉬之半導體材料製成。 The surface can also be made of a semiconductor material such as tantalum, niobium, gallium arsenide, tantalum carbide, and molybdenum disulfide.

該表面亦可為諸如氮化硼、氯化鈉或方解石之材料。 The surface can also be a material such as boron nitride, sodium chloride or calcite.

該表面可以是導電、半導體特或絕緣性的。 The surface can be electrically conductive, semiconductor specific or insulative.

於表面上沉積可藉由適用於沉積有機化合物於表面上之任何方法完成。該方法可(例如)為真空沉積(昇華)法、諸如旋塗、噴塗、浸塗、列印之以溶液為基礎之方法、或由雷射引發之解吸法。 Deposition on the surface can be accomplished by any method suitable for depositing organic compounds on the surface. The method can be, for example, a vacuum deposition (sublimation) method, a solution-based method such as spin coating, spray coating, dip coating, printing, or a laser-induced desorption method.

較佳地,該沉積藉由真空沉積法完成。較佳地,其為真空昇華法。真空可介於10-3至10-11毫巴範圍內。 Preferably, the deposit is accomplished by vacuum deposition. Preferably, it is a vacuum sublimation method. The vacuum can range from 10 -3 to 10 -11 mbar.

如上指明,本發明方法之步驟(b)包括使多環芳族單體及/或寡伸苯基芳族烴單體化合物聚合以於固體基材之表面上形成至少一種聚合物,此至少一種聚合物較佳係直鏈的。 As indicated above, step (b) of the process of the invention comprises polymerizing a polycyclic aromatic monomer and/or an oligophenylene aromatic hydrocarbon monomer compound to form at least one polymer on the surface of the solid substrate, at least one of which The polymer is preferably linear.

實現使多環芳族單體及/或寡伸苯基芳族烴單體化合物聚合之適宜條件一般而言為擅長該技術者所知。 Suitable conditions for effecting polymerization of the polycyclic aromatic monomer and/or oligophenylene aromatic hydrocarbon monomer compound are generally known to those skilled in the art.

較佳地,步驟(b)中之聚合係藉由熱活化引發。然而,亦可使用引發多環芳族單體及/或寡伸苯基芳族烴單體化合物聚合之任何其他能量輸入,諸如輻射。 Preferably, the polymerization in step (b) is initiated by thermal activation. However, any other energy input, such as radiation, that initiates polymerization of the polycyclic aromatic monomer and/or oligophenylene aromatic hydrocarbon monomer compound can also be used.

活化溫度係取決於所使用表面及單體及可介於0至500℃範圍內。 The activation temperature depends on the surface and monomer used and can range from 0 to 500 °C.

視情況,可在進行步驟(c)中之部分或完全脫氫環化之前重複步驟(a)及/或步驟(b)至少一次。在重複步驟(a)及(b)時,可使用相同單體化合物或不同多環芳族單體及/或寡伸苯基芳族烴單體化合物。 Optionally, step (a) and/or step (b) may be repeated at least once prior to performing partial or complete dehydrocyclization in step (c). When repeating steps (a) and (b), the same monomeric compound or different polycyclic aromatic monomer and/or oligophenylene aromatic hydrocarbon monomer compound may be used.

如上指明,本發明方法之步驟(c)包括至少部分地脫氫環化步驟(b)之此一或多種聚合物。 As indicated above, step (c) of the process of the invention comprises at least partially dehydrocyclizing the one or more polymers of step (b).

一般而言,脫氫環化之適宜反應條件為擅長該技術者所知。 In general, suitable reaction conditions for dehydrocyclization are known to those skilled in the art.

於一較佳實施例中,使步驟(b)之聚合物經歷部分脫氫環化。 In a preferred embodiment, the polymer of step (b) is subjected to partial dehydrocyclization.

根據該較佳實施例,選擇反應條件以避免完全脫氫環化。若發生完全脫氫環化,各多環芳族重複單元將完全成環至其近鄰單元。然而,步驟(b)中聚合物部分脫氫環化形 成在近鄰單元間成環程度不同之最終石墨烯奈米帶的片段。於分段之石墨烯奈米帶中之各片段具有其特定的近鄰多環芳族重複單元間之成環程度。因此,藉由採用部分脫氫環化步驟,即使步驟(a)中只有一種多環芳族單體或寡伸苯基芳族烴單體化合物沉積於固體基材上,亦可獲得分段之石墨烯奈米帶。 According to the preferred embodiment, the reaction conditions are selected to avoid complete dehydrocyclization. If complete dehydrocyclization occurs, each polycyclic aromatic repeat unit will be fully looped to its nearest neighbor. However, in step (b), the partial dehydrogenation of the polymer A fragment of the final graphene nanoribbon band having a different degree of ringing between adjacent units. Each fragment in the segmented graphene nanoribbon has a degree of ringing between its particular adjacent polycyclic aromatic repeating units. Therefore, by using a partial dehydrocyclization step, even if only one polycyclic aromatic monomer or oligophenylene aromatic hydrocarbon monomer compound is deposited on a solid substrate in the step (a), a segmentation can be obtained. Graphene nanobelt.

較佳地,藉由熱活化引發部分脫氫環化反應。活化溫度較佳高於引發聚合之第一活化步驟中之溫度。用於部分脫氫環化之活化溫度係取決於所使用表面及聚合物先質及可介於50至600℃範圍內。 Preferably, the partial dehydrocyclization reaction is initiated by thermal activation. The activation temperature is preferably higher than the temperature in the first activation step initiating the polymerization. The activation temperature for partial dehydrocyclization depends on the surface used and the polymer precursor and may range from 50 to 600 °C.

為了可製得分段之石墨烯奈米帶,較佳選定活化溫度及活化時間以避免脫氫環化反應完成而得到非分段之石墨烯奈米帶。 In order to obtain a segmented graphene nanobelt, it is preferred to select an activation temperature and an activation time to avoid completion of the dehydrocyclization reaction to obtain a non-segmented graphene nanobelt.

實例為,就金表面上衍生自化合物2類型之二溴-二蒽基類型單體之先質聚合物而言,可藉由使溫度維持約327℃(600 K)歷時約5分鐘達成部分脫氫環化。若例如於397℃(670 K)下實施於金上之該相同脫氫環化歷時10分鐘,則達成完全脫氫環化。 For example, in the case of a precursor polymer derived from a compound of the type 2 dibromo-diindenyl type on the gold surface, partial desorption can be achieved by maintaining the temperature at about 327 ° C (600 K) for about 5 minutes. Hydrocyclization. If, for example, the same dehydrocyclization on gold is carried out at 397 ° C (670 K) for 10 minutes, complete dehydrocyclization is achieved.

根據本發明之另一較佳實施例,使步驟(b)之至少兩種聚合物經歷完全脫氫環化以形成第一及第二先質石墨烯奈米帶,接著使該第一先質石墨烯奈米帶之至少一個重複單元成環至該第二先質石墨烯奈米帶之至少一個重複單元以形成分段之石墨烯奈米帶。 According to another preferred embodiment of the present invention, at least two polymers of step (b) are subjected to complete dehydrocyclization to form first and second precursor graphene nanoribbons, followed by the first precursor At least one repeating unit of the graphene nanoribbon is looped to at least one repeating unit of the second precursor graphene nanoribbon to form a segmented graphene nanobelt.

兩種先質石墨烯奈米帶已於所處在的區域稠合在一起繼 而呈現最終分段之石墨烯奈米帶中若相較於近鄰片段具有更高的片段寬度之石墨烯片段。 The two precursor graphene nanoribbons have been fused together in the region where they are The graphene nanoribbons in the final segment are graphene fragments having a higher fragment width than the neighboring segments.

實例為,於金表面上,可藉由使溫度維持約437℃(710 K)歷時約5分鐘進行兩近鄰先質石墨烯奈米帶之成環。 For example, on the gold surface, the ringing of the two adjacent precursor graphene nanoribbons can be carried out by maintaining the temperature at about 437 ° C (710 K) for about 5 minutes.

於一較佳實施例中,於步驟(a)中使至少兩種不同多環芳族單體或寡伸苯基芳族烴單體化合物沉積於固體基材上。 In a preferred embodiment, at least two different polycyclic aromatic monomers or oligophenylene aromatic hydrocarbon monomer compounds are deposited on the solid substrate in step (a).

根據該較佳實施例,較佳具有類似反應性之兩或更多種不同單體化合物係沉積於固體基材之表面上,接著引發聚合以形成共聚物(較佳為直鏈共聚物)。隨後,進行部分或完全脫氫環化反應而得到分段之石墨烯奈米帶。 According to the preferred embodiment, preferably two or more different monomeric compounds having similar reactivity are deposited on the surface of the solid substrate, followed by initiation of polymerization to form a copolymer (preferably a linear copolymer). Subsequently, a partial or complete dehydrocyclization reaction is carried out to obtain a segmented graphene nanobelt.

於該較佳實施例之變化例中,第一多環芳族單體或寡伸苯基芳族烴單體化合物係沉積於固體基材之表面上,接著引發聚合以形成聚合物(較佳為直鏈聚合物)。然後使得第二單體沉積同一基材表面上,接著引發聚合以形成嵌段共聚物(較佳為直鏈嵌段共聚物)。可視需要使用相同或者使用不同單體化合物重複此步驟幾次以獲得多嵌段共聚物。隨後,使該嵌段共聚物經歷部分或完全脫氫環化反應而得到分段之石墨烯奈米帶。 In a variation of the preferred embodiment, the first polycyclic aromatic monomer or oligophenylene aromatic hydrocarbon monomer compound is deposited on the surface of the solid substrate, followed by initiation of polymerization to form a polymer (preferably Is a linear polymer). The second monomer is then deposited on the same substrate surface, followed by initiation of polymerization to form a block copolymer (preferably a linear block copolymer). This step can be repeated several times using the same or using different monomer compounds as needed to obtain a multi-block copolymer. Subsequently, the block copolymer is subjected to a partial or complete dehydrocyclization reaction to obtain a segmented graphene nanobelt.

於一較佳實施例中,藉由空間受控外部刺激引發部分或完全脫氫環化反應。 In a preferred embodiment, the partial or complete dehydrocyclization reaction is initiated by a spatially controlled external stimulus.

該外部刺激一般可為電流、熱、離子束、氧化電漿、微波、光或電磁輻射或其可為氧化性化學試劑。活化之空間控制可利用其對基材之位置可以控制之高度聚焦活化刺激完成。該空間受限活化刺激可源自諸如(例如)穿隧顯微鏡 尖端之奈米大小電極或源自諸如(例如)聚焦雷射束之高度聚焦電磁輻射或源自諸如在電子顯微鏡中之高度聚焦電子束。對活性之空間控制亦可使用諸如(例如)光罩之奈米結構化遮罩以引導活化刺激之影響而實現。 The external stimulus can generally be current, heat, ion beam, oxidative plasma, microwave, light or electromagnetic radiation or it can be an oxidizing chemical. The spatial control of activation can be accomplished using a highly focused activation stimulus that controls the position of the substrate. The space-limited activation stimulus can be derived, for example, from a tunneling microscope The tip-sized nano-sized electrode is derived from highly focused electromagnetic radiation such as, for example, a focused laser beam or from a highly focused electron beam such as in an electron microscope. Spatial control of activity can also be achieved using, for example, a nanostructured mask of a reticle to direct the effects of activation stimuli.

所得分段之石墨烯奈米帶可直接用於製得彼等之基材上或彼等可被轉移至另一基材。 The resulting segmented graphene nanoribbons can be used directly on the substrates on which they are made or they can be transferred to another substrate.

實例Instance 1.實驗細節1. Experimental details

分子先質10,10'-二溴-9,9'-二蒽基經以1 Å/min速率昇華100秒至藉由氬離子轟擊及退火至750 K之重複循環清潔之清潔Au(111)單晶基材上。沉積期間使基材維持於室溫然後立刻退火至480 K以引發脫鹵及自由基加成。然後於600 K下對樣本進行退火後處理5 min以將聚合物部分脫氫環化。 The molecular precursor 10,10'-dibromo-9,9'-didecyl group is sublimed at a rate of 1 Å/min for 100 seconds to clean Au (111) by argon ion bombardment and annealing to 750 K. On a single crystal substrate. The substrate was maintained at room temperature during deposition and then annealed to 480 K immediately to initiate dehalogenation and free radical addition. The sample was then annealed at 600 K for 5 min to partially dehydrogenate the polymer.

實例1:藉由熱活化脫氫環化自分子先質10,10'-二溴-9,9'-二蒽基製造分段之石墨烯奈米帶 Example 1: Preparation of segmented graphene nanoribbons from a molecular precursor 10,10'-dibromo-9,9'-didecyl group by thermally activated dehydrocyclization

自下而上GNR製造方法之主要步驟係於Au或Ag樣板上表面輔助熱引發脫氫環化直鏈聚伸苯基。除支撐金屬基材外不需要路易士酸(Lewis acid)或其他觸媒之方法具高度選擇性及有效性。掃描穿隧顯微鏡(STM)實驗展現吸附於Au或Ag基材上之聚蒽鏈於670 K下進行退火時立刻經歷脫氫環化:交替「向上」及「向下」指向之蒽基單元之末端彼此偶聯且使屈曲聚合物鏈轉形成完全平面7-AGNR(具有扶 手椅型構形及跨片段寬度具有7個二聚物線之石墨烯奈米帶)。 The main step in the bottom-up GNR manufacturing process is the surface-assisted thermal initiation of dehydrocyclization of linear poly-phenylenes on Au or Ag-like plates. The method of not requiring Lewis acid or other catalysts other than supporting the metal substrate is highly selective and effective. Scanning tunneling microscopy (STM) experiments show that the polyfluorene chain adsorbed on the Au or Ag substrate undergoes dehydrocyclization immediately upon annealing at 670 K: alternating "up" and "down" pointing thiol units The ends are coupled to each other and the buckling polymer chain is converted to a fully planar 7-AGNR (with The hand chair type configuration and the cross-section width have a graphene nanobelt of 7 dimer lines).

圖1a及1b繪示藉由使聚蒽寡聚物部分脫氫環化實現石墨烯奈米帶異質接面。圖1a顯示展現從在Au(111)基材上所組裝之聚蒽鏈開始合成AGNR之STM測量及對應原子模型。於維持於470 K之基材上沉積分子先質經由所得雙自由基中間物表面促進單體脫鹵及分子間束縛而產生聚蒽寡聚物(左)。於670 K下之退火觸發造成7-AGNR之脫氫環化(右)。如圖1b中所顯示,於600 K之減低溫度下退火5分鐘造成部分脫氫環化且產生帶內異質接面。STM影像及對應原子模型顯示在寬度w7=0.74 nm之全反應N=7 AGNR與寬度w5+=0.49 nm之部分反應聚蒽片段(N=5+)之間實現原子級精確接面。於35 K(V偏壓=1V I=0.1 nA)下以恆定電流模式獲得STM影像。 Figures 1a and 1b illustrate the formation of a graphene nanoribbon heterojunction by partial dehydrocyclization of the polyfluorene oligomer. Figure 1a shows an STM measurement and corresponding atomic model demonstrating the synthesis of AGNR starting from a polyfluorene chain assembled on an Au(111) substrate. The deposition of the molecular precursor on the substrate maintained at 470 K promotes dehalogenation and intermolecular binding of the monomer via the surface of the resulting diradical intermediate to produce a polyfluorene oligomer (left). Annealing at 670 K triggers dehydrocyclization of 7-AGNR (right). Annealing at a reduced temperature of 600 K for 5 minutes results in partial dehydrocyclization and an in-band heterojunction as shown in Figure 1b. The STM image and the corresponding atomic model show an atomic-level exact junction between a fully reactive N=7 AGNR with a width w7=0.74 nm and a partial reaction polyfluorene fragment (N=5+) with a width w5+=0.49 nm. The STM image is obtained in a constant current mode at 35 K (V bias = 1 V I = 0.1 nA).

實例2:藉由STM尖端引發之脫氫環化自分子先質10,10'-二溴-9,9'-二蒽基製造分段之石墨烯奈米帶 Example 2: Dehydrocyclization initiated by STM tip to produce segmented graphene nanoribbons from molecular precursor 10,10'-dibromo-9,9'-didecyl

藉由自STM尖端之電子注射觸發引起脫氫環化。自如上於實例1中所述經中等退火所獲得之異質接面開始,於7-AGNR片段幫助下藉由利用施加至STM尖端之電壓脈衝控制脫氫環化來縮短5+-AGNR區之長度。 Dehydrocyclization is caused by an electronic injection trigger from the tip of the STM. Starting from the heterojunction obtained by medium annealing as described in Example 1, the length of the 5+-AGNR region was shortened by the use of a voltage pulse applied to the tip of the STM to control dehydrocyclization with the aid of the 7-AGNR fragment. .

圖2a-c例示說明具有5+-AGNR區之7-GNR之實例,其中該5+-AGNR區係經電子活化脫氫縮短一個單元。圖2a(左上)顯示藉由熱可控退火所獲得N=7/5+/7異質接面之STM影像及對應原子模型。圖2b(左下)顯示前面異質接面在尖端 引發脫氫一個額外單元之後之STM影像及對應原子模型。圖2a中之圓形標誌電子活化脫氫製程期間之側向尖端位置。圖2c(右)顯示顯示-2.5V下活化反應之I-V曲線。 Figures 2a-c illustrate an example of a 7-GNR having a 5+-AGNR region, wherein the 5+-AGNR region is shortened by one unit by electron activated dehydrogenation. Figure 2a (top left) shows the STM image and corresponding atomic model of the N=7/5+/7 heterojunction obtained by thermally controlled annealing. Figure 2b (bottom left) shows the front heterojunction at the tip STM image and corresponding atomic model after deriving an extra unit of dehydrogenation. The circular mark in Figure 2a is the position of the lateral tip during the electron activation dehydrogenation process. Figure 2c (right) shows the I-V curve showing the activation reaction at -2.5V.

圖3顯示簡圖說明於600 K(V偏壓=-2V,I=0.02 nA)下使聚蒽寡聚物部分脫氫環化所形成之帶異質結構實例之STM形貌圖。圖3a顯示含有N=5+片段之兩N=7帶。圖3b顯示由N=7 AGNR及聚蒽寡聚物片段所組成之異質結構。圖3c顯示N=5+AGNR/聚蒽寡聚物異質結構。 Figure 3 is a schematic diagram showing the STM topography of an example of a heterostructure formed by partial dehydrocyclization of a polyfluorene oligomer at 600 K (V bias = -2 V, I = 0.02 nA). Figure 3a shows two N=7 bands containing N=5+ fragments. Figure 3b shows a heterostructure consisting of N=7 AGNR and polyfluorene oligomer fragments. Figure 3c shows a N=5+AGNR/polyfluorene oligomer heterostructure.

圖4顯示簡圖說明於600 K(V偏壓=-2V,I=0.02 nA)下使聚蒽寡聚物部分脫氫環化所形成之具有三段不同片段之帶異質接面之STM形貌圖。該等片段為聚蒽寡聚物,N=5+AGNR及N=7 AGNR。 Figure 4 is a schematic diagram showing the STM shape of a heterojunction having three different segments formed by partial dehydrocyclization of a polyfluorene oligomer at 600 K (V bias = -2 V, I = 0.02 nA). Look at the picture. The fragments are polyfluorene oligomers, N = 5 + AGNR and N = 7 AGNR.

實例3:藉由使非分段之石墨烯奈米帶熱退火製造分段之石墨烯奈米帶 Example 3: Fabrication of segmented graphene nanoribbons by thermally annealing non-segmented graphene nanoribbons

從在Au(111)基材上所組裝聚蒽鏈開始製備AGNR。於維持於470 K之基材上沉積分子先質經由所得雙自由基中間物表面促進單體脫鹵及分子間束縛而產生聚蒽寡聚物。於670 K下之退火觸發造成非分段之7-AGNR之脫氫環化。於710 K下進行退火後處理5分鐘導致因使非分段之帶熱成環而產生分段之石墨烯奈米帶。 The AGNR was prepared starting from the assembled polyfluorene chain on the Au (111) substrate. The deposition of the molecular precursor on the substrate maintained at 470 K promotes dehalogenation and intermolecular binding of the monomer via the surface of the resulting diradical intermediate to produce a polyfluorene oligomer. Annealing at 670 K triggers dehydrocyclization of the non-segmented 7-AGNR. Annealing at 710 K for 5 minutes resulted in segmented graphene nanoribbons due to thermal ring formation of the non-segmented tape.

圖5顯示簡圖說明藉由在710 K(V偏壓=-0.5V,I=0.1 nA)下退火後處理聚蒽寡聚物所形成帶異質接面之STM形貌圖。於此溫度下觸發個別N=7 AGNR之間的脫氫邊緣偶合,以於N=7 AGNR(寬度為w7=0.74 nm)中形成N=14 AGNR片段(寬度為w14=1.60 nm)。 Figure 5 is a schematic diagram showing the STM topography of a heterojunction formed by treatment of a polyfluorene oligomer after annealing at 710 K (V bias = -0.5 V, I = 0.1 nA). Dehydrogenation edge coupling between individual N=7 AGNRs is triggered at this temperature to form N=14 in N=7 AGNR (width w7=0.74 nm) AGNR fragment (width w14 = 1.60 nm).

圖1a及1b例示說明藉由使聚蒽寡聚物部分脫氫環化實現石墨烯奈米帶異質接面。 Figures 1a and 1b illustrate the formation of a graphene nanoribbon heterojunction by partial dehydrocyclization of a polyfluorene oligomer.

圖2a-c例示說明具有5+-AGNR區之7-GNR之實例,其中5+-AGNR區係經電子活化脫氫而縮短一個單元。 Figures 2a-c illustrate an example of a 7-GNR having a 5+-AGNR region wherein the 5+-AGNR region is shortened by one unit by electron activation dehydrogenation.

圖3顯示簡圖說明藉由在600 K(V偏壓=-2V,I=0.02 nA)下使聚蒽寡聚物部分脫氫環化所形成之帶異質結構之實例之STM形貌圖。 Figure 3 is a diagram showing the STM topography of an example of a heterostructure formed by partial dehydrogenation of a polyfluorene oligomer at 600 K (V bias = -2 V, I = 0.02 nA).

圖4顯示簡圖說明藉由在600 K(V偏壓=-2V,I=0.02 nA)下使聚蒽寡聚物部分脫氫環化所形成之具有三段不同片段之帶異質接面之STM形貌圖。 Figure 4 is a schematic diagram showing a heterojunction having three different segments formed by partial dehydrocyclization of a polyfluorene oligomer at 600 K (V bias = -2 V, I = 0.02 nA). STM topography.

圖5顯示簡圖說明藉由在710 K(V偏壓=-0.5V,I=0.1 nA)下退火後處理聚蒽寡聚物所形成帶異質接面之STM形貌圖。 Figure 5 is a schematic diagram showing the STM topography of a heterojunction formed by treatment of a polyfluorene oligomer after annealing at 710 K (V bias = -0.5 V, I = 0.1 nA).

Claims (21)

一種分段之石墨烯奈米帶,其包括彼此共價鍵聯之至少兩段不同的石墨烯片段,各石墨烯片段具有單分散性片段寬度,其中該等石墨烯片段中至少一者之片段寬度為4 nm或更小。 A segmented graphene nanoribbon comprising at least two different graphene segments covalently bonded to each other, each graphene segment having a monodisperse fragment width, wherein at least one of the graphene fragments The width is 4 nm or less. 如請求項1之分段之石墨烯奈米帶,其中該分段之石墨烯奈米帶之各石墨烯片段具有4 nm或更小之單分散性片段寬度。 A graphene nanoribbon strip as claimed in claim 1, wherein each graphene fragment of the segmented graphene nanoribbon has a monodisperse fragment width of 4 nm or less. 如請求項1或2之分段之石墨烯奈米帶,其中各石墨烯片段具有重複單元,該重複單元係衍生自至少一種經取代或未經取代之多環芳族單體化合物,更佳衍生自至少一種經取代或未經取代之多環芳族烴單體化合物,及/或衍生自至少一種經取代或未經取代之寡伸苯基芳族烴單體化合物。 A graphene nanobelt according to claim 1 or 2, wherein each graphene segment has a repeating unit derived from at least one substituted or unsubstituted polycyclic aromatic monomer compound, more preferably Derivatized from at least one substituted or unsubstituted polycyclic aromatic hydrocarbon monomer compound, and/or derived from at least one substituted or unsubstituted phenylene aromatic hydrocarbon monomer compound. 如請求項1或2之分段之石墨烯奈米帶,其中不同石墨烯片段之該等重複單元至少於選自以下之一或多個下述特性上呈現不同:片段寬度、連接至該重複單元之取代基、芳香環之成環程度或脫氫環化程度及/或成環芳香環的數量。 A graphene nanoribbon strip as claimed in claim 1 or 2, wherein the repeating units of different graphene fragments differ in at least one or more of the following characteristics selected from the group consisting of a fragment width, linked to the repeat The substituent of the unit, the degree of ring formation of the aromatic ring or the degree of dehydrocyclization and/or the number of ring-forming aromatic rings. 如請求項1或2之分段之石墨烯奈米帶,其中該分段之石墨烯奈米帶之各片段具有0.25至250 nm之長度,及/或該分段之石墨烯奈米帶之總長度為至少4nm。 A graphene nanobelt according to claim 1 or 2, wherein each segment of the segmented graphene nanoribbon has a length of from 0.25 to 250 nm, and/or the segmented graphene nanoribbon The total length is at least 4 nm. 如請求項1或2之分段之石墨烯奈米帶,其中該分段之石墨烯奈米帶之該等片段係呈線性配置,或該分段之石墨 烯奈米帶中之至少一片段與至少三段近鄰片段共價鍵聯。 A graphene nanobelt according to claim 1 or 2, wherein the segments of the segmented graphene nanoribbon are linearly arranged, or the segmented graphite At least one fragment of the olefinic band is covalently bonded to at least three adjacent segments. 如請求項1或2之分段之石墨烯奈米帶,其中該等石墨烯片段中之至少一者跨片段寬度具有含N1個二聚物線之經取代或未經取代重複單元,及該等石墨烯片段中之至少一者跨片段寬度具有含N2個二聚物線之經取代或未經取代重複單元,其中N1=5至13,及N2=k×N1,且k=2、3或4。 The graphene nanoribbon of claim 1 or 2, wherein at least one of the graphene fragments has a substituted or unsubstituted repeating unit having N1 dimer lines across a fragment width, and At least one of the equal graphene fragments has a substituted or unsubstituted repeating unit having N2 dimeric lines across the width of the fragment, wherein N1 = 5 to 13, and N2 = k x N1, and k = 2, 3 Or 4. 如請求項1或2之分段之石墨烯奈米帶,其中該兩個或更多個不同石墨烯片段具有衍生自經取代或未經取代蒽單體化合物之重複單元,該分段之石墨烯奈米帶較佳具有以下結構式Ia: 其限制條件為m、x、n、y、o、z及p中之至少兩者1,且m+x+n+y+o+z+p10,及其中:X彼此獨立地為H、鹵素、SH、SR3、OH、OR3、 OSO2R3、(SO)R3、(SO2)R3、NR1R2、NO2、POR3R3、PO(OR3)R3、PO(OR3)2、B(R3)2、B(OR3)2、(CO)R3、(CO)OR3,較佳為H或鹵素,更佳為H;Y彼此獨立地為H或在近鄰重複單元之間的兩個Y共同形成直接鍵;R彼此獨立地為氫;未經取代或經一或多個OH、C1-C4烷氧基、苯基或CN取代之直鏈或支鏈或環狀C1-C12烷基;間雜一或多個非連續O之C2-C12烷基;鹵素;OH;OR3;SR3;CN;NO2;NR1R2;(CO)R3;(CO)OR3;O(CO)OR3;O(CO)NR1R2;O(CO)R3;C1-C12烷氧基;C1-C12烷硫基;(C1-C6烷基)-NR7R8;或-O-(C1-C6烷基)NR1R2;芳基或雜芳基(其中芳基較佳為苯基、聯苯基、萘基或蒽基,其等均係未經取代或經一或多個C1-C4-烷基、CN、OR3、SR3、CH2OR3、(CO)OR3、(CO)NR1R2或鹵素取代);或兩個R與彼等所連接之碳原子共同形成5至8員環或雜環;R1與R2彼此獨立地為氫、直鏈或支鏈C1-C6烷基或苯基,或R1及R2與彼等所鍵結之氮原子共同形成選自之基團;R3為H、C1-C12烷基、未經取代或經一或多個C1-C4烷基、苯基、鹵素、C1-C4烷氧基或C1-C4烷硫基取代之苯基。 The graphene nanoribbon of claim 1 or 2, wherein the two or more different graphene fragments have repeating units derived from a substituted or unsubstituted fluorene monomer compound, the segmented graphite The olefinic band preferably has the following structural formula Ia: The constraint is at least two of m, x, n, y, o, z, and p 1, and m+x+n+y+o+z+p 10, and wherein: X is independently H, halogen, SH, SR 3 , OH, OR 3 , OSO 2 R 3 , (SO) R 3 , (SO 2 ) R 3 , NR 1 R 2 , NO 2 , POR 3 R 3 , PO(OR 3 )R 3 , PO(OR 3 ) 2 , B(R 3 ) 2 , B(OR 3 ) 2 , (CO)R 3 , (CO)OR 3 , preferably H Or halogen, more preferably H; Y independently of each other H or two Ys between adjacent repeating units form a direct bond; R is independently hydrogen; unsubstituted or via one or more OH, C 1 a linear or branched or cyclic C 1 -C 12 alkyl group substituted with a C 4 alkoxy group, a phenyl group or a CN; a C 2 -C 12 alkyl group having one or more discontinuous O; a halogen; OH; OR 3 ; SR 3 ; CN; NO 2 ; NR 1 R 2 ; (CO) R 3 ; (CO)OR 3 ; O(CO)OR 3 ; O(CO)NR 1 R 2 ; O(CO)R 3 ; C 1 -C 12 alkoxy; C 1 -C 12 alkylthio; (C 1 -C 6 alkyl)-NR 7 R 8 ; or -O-(C 1 -C 6 alkyl)NR 1 R An aryl or heteroaryl group (wherein the aryl group is preferably a phenyl group, a biphenyl group, a naphthyl group or a fluorenyl group, which are all unsubstituted or one or more C 1 -C 4 -alkyl groups, CN, oR 3, SR 3, CH 2 oR 3, substituted (CO) oR 3, (CO ) NR 1 R 2 or halogen); or two R with their Is connected to carbon atom together form a 5-8 or heterocyclic ring; R 1 and R 2 are each independently hydrogen, a linear or branched C 1 -C 6 alkyl or phenyl, or R 1 and R 2 with each other The nitrogen atoms bonded together are selected from , or a group; R 3 is H, C 1 -C 12 alkyl, unsubstituted or via one or more C 1 -C 4 alkyl, phenyl, halogen, C 1 -C 4 alkoxy or C 1 -C 4 alkylthio substituted phenyl. 如請求項1或2之分段之石墨烯奈米帶,其中該兩個或更多個不同的石墨烯片段具有衍生自經取代或未經取代之並五苯單體化合物之重複單元,該分段之石墨烯奈米帶較佳具有以下結構式II: 其限制條件為m、x、n、y、o、z及p中之至少兩者1,其中m+x+n+y+o+z+p10,及其中X、Y及R具有如請求項8中所定義之相同含義。 The graphene nanoribbon of claim 1 or 2, wherein the two or more different graphene fragments have repeating units derived from a substituted or unsubstituted pentacene monomer compound, The segmented graphene nanoribbon preferably has the following structural formula II: The constraint is at least two of m, x, n, y, o, z, and p 1, where m+x+n+y+o+z+p 10, and X, Y and R thereof have the same meaning as defined in claim 8. 如請求項1或2之分段之石墨烯奈米帶,其中該兩個或更多個不同的石墨烯片段具有衍生自經取代或未經取代之蒽及並五苯單體化合物之重複單元,該分段之石墨烯奈米帶較佳具有以下結構式IV: 其中m+n10,及其中R1及R2與定義於請求項8中之R相同,但限制條件為R1不同於R2,及X與請求項8中所定義相同。 The graphene nanoribbon of claim 1 or 2, wherein the two or more different graphene fragments have repeating units derived from substituted or unsubstituted anthracene and pentacene monomer compounds The segmented graphene nanoribbon preferably has the following structural formula IV: Where m+n 10, and R1 and R2 thereof are the same as R defined in claim 8, but the constraint is that R1 is different from R2, and X is the same as defined in claim 8. 如請求項1或2之分段之石墨烯奈米帶,其中該兩個或更多個不同的石墨烯片段具有衍生自經取代及/或未經取代之萘單體化合物之重複單元,該分段之石墨烯奈米帶較佳具有以下結構式V: 其限制條件為m、x及n中之至少兩者1,其中m+x+n10,及其中X、Y及R具有如請求項8中之相同含義。 The graphene nanoribbon of claim 1 or 2, wherein the two or more different graphene fragments have repeating units derived from a substituted and/or unsubstituted naphthalene monomer compound, The segmented graphene nanoribbon preferably has the following structural formula V: The constraint is at least two of m, x and n 1, where m+x+n 10, and X, Y and R thereof have the same meaning as in claim 8. 如請求項1或2之分段之石墨烯奈米帶,其中該等片段中之至少一者具有N1=5之經取代或未經取代之重複單元及該等片段中之至少一者具有N2=10或15之經取代或未經取代之重複單元,其中N1及N2為跨片段寬度之二聚物線的數量,該分段之石墨烯奈米帶較佳具有以下化學結構式XI: 其限制條件為m、p、q、r、s、u、v、w及x中之至少一者1,且n、o及t中之至少一者1,其中m+n+o+p+q+r+s+t+u+v+w+x10,及其中X及Y具有如請求項8中之相同含義。 The graphene nanoribbon of claim 1 or 2, wherein at least one of the fragments has a substituted or unsubstituted repeating unit of N1=5 and at least one of the fragments has N2 a substituted or unsubstituted repeating unit of 10 or 15 wherein N1 and N2 are the number of dimer lines across the width of the segment, and the segmented graphene nanoribbon preferably has the following chemical formula XI: The constraint is at least one of m, p, q, r, s, u, v, w, and x 1, and at least one of n, o, and t 1, where m+n+o+p+q+r+s+t+u+v+w+x 10, and X and Y thereof have the same meaning as in claim 8. 如請求項1或2之分段之石墨烯奈米帶,其中該等片段中之至少一者具有N1=7之經取代或未經取代之重複單元及該等片段中之至少一者具有N2=14或21之經取代或未經取代之重複單元,其中N1及N2為跨片段寬度之二聚物線的數量,該分段之石墨烯奈米帶較佳具有以下化學結構 式If: 其限制條件為m、p、q、w、x、r、s、u及v中之至少一者1,且n、o及t中之至少一者1,其中m+n+o+p+q+r+s+t+u+v+w+x10,及其中X及Y具有如請求項8中之相同含義。 The graphene nanoribbon of claim 1 or 2, wherein at least one of the fragments has a substituted or unsubstituted repeating unit of N1=7 and at least one of the fragments has N2 a substituted or unsubstituted repeating unit of 14 or 21 wherein N1 and N2 are the number of dimer lines across the width of the segment, and the segmented graphene nanoribbon preferably has the following chemical structural formula If: The constraint is at least one of m, p, q, w, x, r, s, u, and v 1, and at least one of n, o, and t 1, where m+n+o+p+q+r+s+t+u+v+w+x 10, and X and Y thereof have the same meaning as in claim 8. 如請求項1或2之分段之石墨烯奈米帶,其包含至少一個異質接面。 A graphene nanobelt of claim 1 or 2 comprising at least one heterojunction. 一種用於製造如請求項1至14中任一項之分段之石墨烯奈米帶之方法,該方法包括:(a)將至少一種多環芳族單體化合物及/或寡伸苯基芳族烴單體化合物沉積於固體基材上,(b)使該多環芳族及/或寡伸苯基芳族烴單體化合物聚合以於該固體基材之表面上形成至少一種聚合物,該至少一種聚合物較佳係直鏈的, (c)至少部分地使步驟(b)之該一或多種聚合物脫氫環化。 A method for producing a segmented graphene nanobelt according to any one of claims 1 to 14, which comprises: (a) at least one polycyclic aromatic monomer compound and/or oligophenylene The aromatic hydrocarbon monomer compound is deposited on a solid substrate, (b) polymerizing the polycyclic aromatic and/or oligophenylene aromatic hydrocarbon monomer compound to form at least one polymer on the surface of the solid substrate The at least one polymer is preferably linear, (c) dehydrocyclizing the one or more polymers of step (b) at least in part. 如請求項15之方法,其中藉由熱活化引發步驟(b)中之該聚合。 The method of claim 15, wherein the polymerization in step (b) is initiated by thermal activation. 如請求項15或16之方法,其中使步驟(b)之該聚合物經歷部分脫氫環化。 The method of claim 15 or 16, wherein the polymer of step (b) is subjected to partial dehydrocyclization. 如請求項15或16之方法,其中使步驟(b)之至少兩種聚合物經歷完全脫氫環化以形成第一及第二先質石墨烯奈米帶,接著使該第一先質石墨烯奈米帶之至少一個重複單元與該第二先質石墨烯奈米帶之至少一個重複單元成環,以形成分段之石墨烯奈米帶。 The method of claim 15 or 16, wherein the at least two polymers of step (b) are subjected to complete dehydrocyclization to form first and second precursor graphene nanoribbons, followed by the first precursor graphite At least one repeating unit of the olefinic strip is looped with at least one repeating unit of the second precursor graphene nanoribbon to form a segmented graphene nanobelt. 如請求項15或16之方法,其中在步驟(a)中,將至少兩種不同多環芳族單體或寡伸苯基芳族烴單體化合物沉積於固體基材上,接著在步驟(b)中聚合形成共聚物,然後在步驟(c)中至少部分地使該共聚物脫氫環化。 The method of claim 15 or 16, wherein in step (a), at least two different polycyclic aromatic monomers or oligophenylene hydrocarbon monomer compounds are deposited on a solid substrate, followed by b) Polymerization to form a copolymer which is then at least partially dehydrocyclized in step (c). 如請求項15或16之方法,其中:在步驟(a)中將第一多環芳族單體或寡伸苯基芳族烴單體化合物沉積於固體基材上,接著在步驟(b)中發生聚合以在該固體基材上形成第一聚合物,以不同於該第一單體化合物之第二多環芳族單體或寡伸苯基芳族烴單體化合物重複步驟(a)與(b),而與該固體基材上之該第一聚合物形成嵌段共聚物,視情況重複步驟(a)與(b)至少一次,以提供多嵌段共聚物, 隨後在步驟(c)中至少部分地使該嵌段共聚物脫氫環化。 The method of claim 15 or 16, wherein: in step (a), the first polycyclic aromatic monomer or oligophenylene aromatic hydrocarbon monomer compound is deposited on a solid substrate, followed by step (b) Polymerization occurs to form a first polymer on the solid substrate, and repeating step (a) with a second polycyclic aromatic monomer or an oligophenylene aromatic hydrocarbon monomer compound different from the first monomer compound And (b) forming a block copolymer with the first polymer on the solid substrate, and repeating steps (a) and (b) at least once to provide a multi-block copolymer, The block copolymer is then at least partially dehydrocyclized in step (c). 如請求項15或16之方法,其中藉由空間受控外部刺激來引發該部分或完全脫氫環化。 The method of claim 15 or 16, wherein the partial or complete dehydrocyclization is initiated by a spatially controlled external stimulus.
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