TW201327614A - Pixel structure of field emission display device and repairing method thereof - Google Patents
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Description
本發明是有關於一種畫素結構及其修補方法，且特別是有關於一種場發射式顯示器的畫素結構及其修補方法。The present invention relates to a pixel structure and a repair method thereof, and more particularly to a pixel structure of a field emission display and a repair method thereof.
場發射顯示器的發光原理，是在真空環境下利用電場將材料尖端的電子吸引出，而離開陰極板的場發射電子受陽極上正電壓的加速吸引，撞擊至陽極的螢光粉而發光(Luminescence)。陰極板是作為場電子發射源，而陽極板作為發光源，由陰極板射出之電子撞擊陽極板上之螢光層而發光。The principle of illumination of the field emission display is to draw the electrons at the tip of the material by an electric field in a vacuum environment, and the field emission electrons leaving the cathode plate are attracted by the positive voltage on the anode, and the phosphor powder impinging on the anode emits light (Luminescence). ). The cathode plate is used as a field electron emission source, and the anode plate is used as a light source. The electrons emitted from the cathode plate strike the phosphor layer on the anode plate to emit light.
一般來說，場發射顯示器的場電子放射器是位於兩條訊號線交叉重疊的區域中，此區域又稱為顯示發射區。當顯示發射區發生任何缺陷，例如構件之間的不當短路、構件之間的不當斷路或是有微粒子掉落在顯示發射區時，若是利用雷射切割或是其他合適的方法將對應的訊號線切斷，將造成被切斷的訊號線所連接的畫素結構失去發光的效能。如此一來，顯示發射區的作用面積將大為減少，使得場發射示顯示器的良率下降。In general, the field electron emitter of a field emission display is located in an area where two signal lines overlap, and this area is also referred to as a display emission area. When displaying any defects in the launch area, such as improper short circuit between components, improper disconnection between components, or the presence of particles falling in the display launch area, if using laser cutting or other suitable method, the corresponding signal line Cutting off will cause the pixel structure connected to the cut signal line to lose its luminous efficacy. As a result, the active area of the display emitter area will be greatly reduced, so that the field emission shows a decrease in the yield of the display.
本發明提供一種場發射式顯示器的畫素結構及其修補方法，其具有可修補的結構設計，有助於提升畫素結構的良率。The invention provides a pixel structure of a field emission display and a repairing method thereof, which has a repairable structural design, which helps to improve the yield of the pixel structure.
本發明提出一種場發射式顯示器的畫素結構包括第一導線、第二導線以及多個電子放射器。第一導線具有第一主線以及第一延伸部。第一主線具有第一延伸方向。第二導線具有第二主線以及第二延伸部。第二主線具有第二延伸方向。第一延伸部以及第二延伸部之間形成重疊區域。電子放射器位於第一延伸部以及第二延伸部之間並且位於重疊區域中。The invention provides a pixel structure of a field emission display comprising a first wire, a second wire and a plurality of electron emitters. The first wire has a first main line and a first extension. The first main line has a first extension direction. The second wire has a second main line and a second extension. The second main line has a second extension direction. An overlapping region is formed between the first extension portion and the second extension portion. The electron emitter is located between the first extension and the second extension and is located in the overlap region.
本發明再提出一種場發射式顯示器的修補方法。首先，提供場發射式顯示器。所述場發射式顯示器具有多個如上所述之畫素結構。所述畫素結構的其中之一為一缺陷畫素。接著，對所述缺陷畫素之第一延伸部與第一主線進行第一分離程序以使第一延伸部與第一主線分離，或是對所述缺陷畫素之第二延伸部與第二主線進行第二分離程序以使第二延伸部與第二主線分離。The invention further proposes a repair method for a field emission display. First, a field emission display is provided. The field emission display has a plurality of pixel structures as described above. One of the pixel structures is a defective pixel. Next, performing a first separation process on the first extension of the defective pixel and the first main line to separate the first extension from the first main line, or the second extension and the second on the defect pixel The main line performs a second separation process to separate the second extension from the second main line.
本發明更提出一種場發射式顯示器的修補方法。首先，提供場發射式顯示器。所述場發射式顯示器具有多個如上所述之畫素結構，且各畫素結構之第二延伸部包括連接部以及至少一重疊部，連接部與第二主線連接，且重疊區域位於第二延伸部之重疊部與第一延伸部之間。所述畫素結構的其中之一為一缺陷畫素。接著，對所述缺陷畫素之第一延伸部與第一主線進行第一分離程序以使第一延伸部與第一主線分離，或是對缺陷畫素之第二延伸部的連接部與重疊部進行第二分離程序以分離連接部與重疊部。The invention further provides a repair method for a field emission display. First, a field emission display is provided. The field emission display has a plurality of pixel structures as described above, and the second extension of each pixel structure includes a connection portion and at least one overlap portion, the connection portion is connected to the second main line, and the overlap region is located at the second Between the overlapping portion of the extension and the first extension. One of the pixel structures is a defective pixel. Next, performing a first separation process on the first extension of the defective pixel and the first main line to separate the first extension from the first main line or the connection and overlap on the second extension of the defective pixel The second separation process is performed to separate the connection portion and the overlap portion.
基於上述，本發明之場發射式顯示器中畫素結構之電子放射器是配置在第一延伸部以及第二延伸部的重疊區域中。當所述場發射式顯示器的構件之間發生缺陷時，可以使用分離程序將發生缺陷所對應之區域的延伸部與主線分離。如此一來，主線部分仍為連續的傳輸線路，其他沒有發生缺陷的畫素結構可以正常的運作。因此，根據本發明之場發射式顯示器的修補方法，可以大幅提升場發射式顯示器的製程良率。Based on the above, the electron emitter of the pixel structure in the field emission type display of the present invention is disposed in the overlapping region of the first extension portion and the second extension portion. When a defect occurs between members of the field emission display, a separation program can be used to separate the extension of the region where the defect occurs from the main line. As a result, the main line portion is still a continuous transmission line, and other pixel structures without defects can operate normally. Therefore, according to the repair method of the field emission type display of the present invention, the process yield of the field emission type display can be greatly improved.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1A是本發明一實施例之場發射式顯示器的畫素結構P1的上視示意圖。圖1B是沿圖1A中剖線A-A’的剖面示意圖。圖1A以及圖IB僅繪示場發射式顯示器的其中一個畫素結構P1以作說明。一般來說，場發射式顯示器是由多個畫素結構所構成。因此此領域技術人員根據圖1A之畫素結構P1之說明，便可清楚地可以理解場發射式顯示器的畫素結構之架構。1A is a top plan view of a pixel structure P1 of a field emission type display according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along line A-A' of Fig. 1A. 1A and IB show only one of the pixel structures P1 of the field emission display for illustration. In general, a field emission display is composed of a plurality of pixel structures. Therefore, the structure of the pixel structure of the field emission display can be clearly understood by those skilled in the art according to the description of the pixel structure P1 of FIG. 1A.
請同時參考圖1A以及圖1B，本實施例之場發射式顯示器的畫素結構P1包括第一導線110、第二導線120以及多個電子放射器130。此外，本實施例之畫素結構P1更包括基板102、電阻層140、介電層150以及保護層160。Referring to FIG. 1A and FIG. 1B simultaneously, the pixel structure P1 of the field emission display of the present embodiment includes a first wire 110, a second wire 120, and a plurality of electron emitters 130. In addition, the pixel structure P1 of the embodiment further includes a substrate 102, a resistance layer 140, a dielectric layer 150, and a protective layer 160.
第一導線110位於基板102上。第一導線110具有第一主線112以及至少一第一延伸部114，且第一主線112具有第一延伸方向D1。第一導線110一般是使用金屬材料。然，本發明不限於此，根據其他實施例，第一導線110也可以使用其他導電材料。例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其它合適的材料、或是金屬材料與其它導電材料的堆疊層。The first wire 110 is located on the substrate 102. The first wire 110 has a first main line 112 and at least one first extension 114, and the first main line 112 has a first extending direction D1. The first wire 110 is generally made of a metal material. However, the present invention is not limited thereto, and other conductive materials may be used for the first wire 110 according to other embodiments. For example: alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials, or stacked layers of metallic materials and other electrically conductive materials.
電阻層140位於基板102上且覆蓋第一導線110。電阻層140例如為電阻材料或是電阻材料與絕緣材料兩者之堆疊層。上述之電阻材料可為矽、非晶矽、矽化物、非晶碳、陶瓷材料、半導體氧化物、半導體氮化物、金屬氧化物、金屬氮化物或是其他適用的電阻材料。上述之絕緣材料例如是氧化矽、氮化矽等無機絕緣材料或是有機絕緣材料。The resistive layer 140 is on the substrate 102 and covers the first wire 110. The resistive layer 140 is, for example, a resistive material or a stacked layer of both a resistive material and an insulating material. The above-mentioned resistive material may be tantalum, amorphous germanium, germanide, amorphous carbon, ceramic material, semiconductor oxide, semiconductor nitride, metal oxide, metal nitride or other suitable resistive material. The above insulating material is, for example, an inorganic insulating material such as cerium oxide or tantalum nitride or an organic insulating material.
介電層150位於電阻層140上。介電層150具有多個開口150S，且開口150S貫穿介電層150。本發明不限介電層150之開口150S的數目。The dielectric layer 150 is on the resistive layer 140. The dielectric layer 150 has a plurality of openings 150S, and the openings 150S extend through the dielectric layer 150. The present invention is not limited to the number of openings 150S of the dielectric layer 150.
電子放射器130位於介電層150之開口150S內。電子放射器130可為奈米碳管電子放射端或是其他種尖端放電形式之電子放射端。此外，本發明不對電子放射器130的數目作限制。The electron emitter 130 is located within the opening 150S of the dielectric layer 150. The electron emitter 130 can be an electron emitting end of a carbon nanotube or other type of electron emitting end in the form of a tip discharge. Moreover, the present invention does not limit the number of electron emitters 130.
第二導線120位於介電層150之上。第二導線120具有第二主線122以及至少一第二延伸部124，且第二主線122沿第二延伸方向D2延伸。特別一提的是，第一延伸部114以及第二延伸部124之間形成重疊區域I。電子放射器130位於第一延伸部114以及第二延伸部124之間並且位於所述重疊區域I中。此外，第二延伸部124更包括連接部124a以及至少一重疊部124b。詳細而言，第二延伸部124中的連接部124a是與第二主線122連接，且連接部124a的延伸方向與第一主線112的第一延伸方向D1平行。另外，所述的重疊區域I是位於第二延伸部124中的重疊部124b與第一延伸部114之間。根據本實施例，重疊部124b位於介電層150中靠近開口150S之頂表面且填入開口150S內。因此重疊部124b是圍繞於電子放射器130頂部之周圍，且與電子放射器130之間電性連接。第二導線120之材質包括金屬，然，本發明不限於此。換言之，第二導線120也可以使用其他導電材料。例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其它合適的材料、或是金屬材料與其它導電材料的堆疊層。值得一提的是，由於電子放射器130位於重疊部124b之上，而且電子放射器130與重疊部124b之間的黏著性比電子放射器130與介電層150之間的黏著性佳，因此電子放射器130不易產生剝落的現象。保護層160位於第二導線120上。保護層160的材質例如為氧化矽、氮化矽、氮氧化矽或是其他合適的保護層材料。The second wire 120 is over the dielectric layer 150. The second wire 120 has a second main line 122 and at least one second extension 124, and the second main line 122 extends in the second extension direction D2. In particular, an overlap region I is formed between the first extension portion 114 and the second extension portion 124. The electron emitter 130 is located between the first extension 114 and the second extension 124 and is located in the overlap region I. In addition, the second extending portion 124 further includes a connecting portion 124a and at least one overlapping portion 124b. In detail, the connecting portion 124 a of the second extending portion 124 is connected to the second main line 122 , and the extending direction of the connecting portion 124 a is parallel to the first extending direction D1 of the first main line 112 . In addition, the overlapping region I is located between the overlapping portion 124b and the first extending portion 114 in the second extending portion 124. According to the present embodiment, the overlapping portion 124b is located in the dielectric layer 150 near the top surface of the opening 150S and filled into the opening 150S. Therefore, the overlapping portion 124b surrounds the periphery of the top of the electron emitter 130 and is electrically connected to the electron emitter 130. The material of the second wire 120 includes a metal, however, the invention is not limited thereto. In other words, the second wire 120 can also use other conductive materials. For example: alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials, or stacked layers of metallic materials and other electrically conductive materials. It is worth mentioning that since the electron emitter 130 is located above the overlapping portion 124b, and the adhesion between the electron emitter 130 and the overlapping portion 124b is better than that between the electron emitter 130 and the dielectric layer 150, The electron emitter 130 is less prone to spalling. The protective layer 160 is located on the second wire 120. The material of the protective layer 160 is, for example, tantalum oxide, tantalum nitride, hafnium oxynitride or other suitable protective layer material.
圖1C為圖1A之畫素結構P1應用於場發射式顯示器100a時，對應圖1A之剖線A-A’示意圖。請參考圖1C，本實施例之場發射式顯示器更包括間隙結構200以及陽極結構300。陽極結構300跟畫素結構P1相對設置。間隙結構200位於陽極結構300跟畫素結構P1之間。一般而言，陽極結構300包括基板、黑矩陣層、發光材料層以及陽極層(未繪示)。在此，第一導線110例如為陰極，第二導線120之重疊部124b例如為閘極。當場發射式顯示器100a運作之時，電子放射器130會發射出電子束e。所述電子束e撞擊發光材料層而使場發射式顯示器發光。1C is a schematic view of a cross-sectional line A-A' corresponding to FIG. 1A when the pixel structure P1 of FIG. 1A is applied to the field emission display 100a. Referring to FIG. 1C , the field emission display of the embodiment further includes a gap structure 200 and an anode structure 300 . The anode structure 300 is disposed opposite to the pixel structure P1. The gap structure 200 is located between the anode structure 300 and the pixel structure P1. In general, the anode structure 300 includes a substrate, a black matrix layer, a luminescent material layer, and an anode layer (not shown). Here, the first wire 110 is, for example, a cathode, and the overlapping portion 124b of the second wire 120 is, for example, a gate. When the field emission display 100a is in operation, the electron emitter 130 emits an electron beam e. The electron beam e strikes the luminescent material layer to cause the field emission display to emit light.
在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.
圖2A為本發明另一實施例之畫素結構P2的剖面示意圖。圖2B是沿圖2A中剖線B-B’的剖面示意圖。請參照圖2A以及圖2B，本實施例之場發射式顯示器的畫素結構P2包括第一導線110、第二導線120以及多個電子放射器130。在此須說明的是，本實施例之畫素結構P2與前述圖1A之實施例之畫素結構P1類似，相似構件的材料及功能在此不重複敘述，惟二者主要差異之處在於：本實施例之畫素結構P2更包括金屬導線126。而金屬導線126是在形成第二導線120之第二主線122以及第二延伸部124之前所形成。另外，本實施例之畫素結構P2更包括基板102、電阻層140、介電層150以及保護層160。所述金屬導線126配置於介電層150之上，且其配置於介電層150與第二主線122以及連接部124a之間。換言之，第二主線122以及連接部124a覆蓋在金屬導線126之上。類似地，在本實施例中，電子放射器130位於第二延伸部124之第二重疊部124b之上，而且電子放射器130與重疊部124b之間的黏著性比電子放射器130與介電層150之間的黏著性佳，因此電子放射器130不易產生剝落的現象。2A is a schematic cross-sectional view showing a pixel structure P2 according to another embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along line B-B' of Fig. 2A. Referring to FIG. 2A and FIG. 2B , the pixel structure P2 of the field emission display of the embodiment includes a first wire 110 , a second wire 120 , and a plurality of electron emitters 130 . It should be noted that the pixel structure P2 of the embodiment is similar to the pixel structure P1 of the embodiment of FIG. 1A. The materials and functions of the similar components are not repeated here, but the main differences are as follows: The pixel structure P2 of this embodiment further includes a metal wire 126. The metal wire 126 is formed before the second main line 122 of the second wire 120 and the second extension 124 are formed. In addition, the pixel structure P2 of the embodiment further includes a substrate 102, a resistance layer 140, a dielectric layer 150, and a protective layer 160. The metal wire 126 is disposed on the dielectric layer 150 and disposed between the dielectric layer 150 and the second main line 122 and the connecting portion 124a. In other words, the second main line 122 and the connecting portion 124a are overlaid on the metal wire 126. Similarly, in the present embodiment, the electron emitter 130 is located above the second overlapping portion 124b of the second extension portion 124, and the adhesion between the electron emitter 130 and the overlapping portion 124b is higher than that of the electron emitter 130 and the dielectric Since the adhesion between the layers 150 is good, the electron emitter 130 is less likely to be peeled off.
圖2C為圖2A之畫素結構P2應用於場發射式顯示器100b時，對應圖2A之剖線B-B’的示意圖。請參考圖2C，與圖1C之實施例類似地，本實施例之場發射式顯示器100b包括間隙結構200以及陽極結構300。陽極結構300跟畫素結構P2相對設置。間隙結構200位於陽極結構300跟畫素結構P2之間。一般而言，陽極結構300包括基板、黑矩陣層、發光材料層以及電極層(未繪示)。在此，電極層例如為陽極、第一導線110例如為陰極，第二導線120之重疊部124b例如為閘極。當場發射式顯示器運作之時，第一導線110與陽極結構300之間會形成一電場，激發電子放射器130發射出電子束e。所述電子束e撞擊發光材料層而使場發射式顯示器發光。Fig. 2C is a schematic view corresponding to the line B-B' of Fig. 2A when the pixel structure P2 of Fig. 2A is applied to the field emission type display 100b. Referring to FIG. 2C, similar to the embodiment of FIG. 1C, the field emission display 100b of the present embodiment includes a gap structure 200 and an anode structure 300. The anode structure 300 is disposed opposite the pixel structure P2. The gap structure 200 is located between the anode structure 300 and the pixel structure P2. In general, the anode structure 300 includes a substrate, a black matrix layer, a layer of luminescent material, and an electrode layer (not shown). Here, the electrode layer is, for example, an anode, the first wire 110 is, for example, a cathode, and the overlapping portion 124b of the second wire 120 is, for example, a gate. When the field emission display is in operation, an electric field is formed between the first wire 110 and the anode structure 300, and the excitation electron emitter 130 emits an electron beam e. The electron beam e strikes the luminescent material layer to cause the field emission display to emit light.
一般來說，習知場發射式顯示器的畫素結構中通常是將電子放射器配置在第一主線與第二主線交會之處，以作為發射顯示區。而本發明之實施例中畫素結構P1與P2則是提供具有第一延伸部114以及第二延伸部124的第一導線110與第二導線120，並且將電子放射器配置在第一延伸部114與第二延伸部124重疊之上，以作為發射顯示區。當畫素結構P1或P2中發生構件之間的短路、斷路或是有微粒子掉落在重疊區域I中時，部分的畫素結構P1或P2會失去效能，造成有瑕玼的顯示畫面。Generally, in the pixel structure of a conventional field emission display, an electron emitter is usually disposed at a place where the first main line and the second main line meet to serve as an emission display area. In the embodiment of the present invention, the pixel structures P1 and P2 provide the first wire 110 and the second wire 120 having the first extension portion 114 and the second extension portion 124, and the electron emitter is disposed on the first extension portion. The 114 overlaps the second extension 124 to serve as an emission display area. When a short circuit, an open circuit, or a microparticle falls between the components in the pixel structure P1 or P2, the partial pixel structure P1 or P2 loses its effectiveness, causing a flawed display.
有鑑於此，本發明提出一種場發射式顯示器的修補方法。圖3A為本發明一實施例中場發射式顯示器的修補方法的示意圖。圖3B為沿圖3A中剖線C-C’的剖面示意圖。在此以圖2A中的場發射式顯示器100b為例說明，當然，場發射式顯示器100a也可以使用相同的修補方式，本發明不以此為限。請同時參考圖3A以及圖3B，本實施之場發射式顯示器100b的修補方法包括提供場發射式顯示器100b，場發射式顯示器100b具有多個畫素結構P2，而多個畫素結構P2的其中一個為缺陷畫素P’。須說明的是，為清楚繪示修補的方式，在圖3A中僅繪示場發射式顯示器100b中的缺陷畫素P’，而省略繪示場發射式顯示器的其他構件。具體而言，本實施例的缺陷畫素P’中具有一個微粒子U。所述微粒子U造成缺陷畫素P’的顯示功能產生異常。因此，本實施例之場發射式顯示器100b的修補方法可以對缺陷畫素P’中的第一延伸部114與第一主線112進行第一分離程序L1，以使第一延伸部114與第一主線112分離。具體而言，所述第一分離程序例如為雷射切割程序，其可以將第一延伸部114以及第一主線112進行切割而形成一分離區域M1(如圖3B所示)。換言之，位於分離區域M1中的第一延伸部114、電阻層140、介電層150以及保護層160會形成開孔以暴露出基板102。詳細而言，根據本發明所述之修補方法，主要是能夠使第一延伸部114與第一主線112斷開即可達到修補的效果。如此一來，與第一主線112連接的缺陷畫素P’將失去訊號的輸入而停止運作。另外，與第一主線112連接的其他畫素結構P2將維持正常的運作。In view of this, the present invention proposes a repair method for a field emission type display. FIG. 3A is a schematic diagram of a repair method of a field emission type display according to an embodiment of the invention. Fig. 3B is a schematic cross-sectional view taken along line C-C' of Fig. 3A. The field emission display 100b of FIG. 2A is taken as an example. Of course, the field emission display 100a can also use the same repairing method, and the invention is not limited thereto. Referring to FIG. 3A and FIG. 3B simultaneously, the repair method of the field emission display 100b of the present embodiment includes providing a field emission display 100b having a plurality of pixel structures P2, and wherein the plurality of pixel structures P2 are One is the defective pixel P'. It should be noted that, in order to clearly illustrate the manner of repair, only the defective pixel P' in the field emission type display 100b is shown in Fig. 3A, and other members of the field emission type display are omitted. Specifically, the defective pixel P' of the present embodiment has one fine particle U. The microparticles U cause an abnormality in the display function of the defective pixel P'. Therefore, the repairing method of the field emission display 100b of the embodiment may perform the first separation process L1 on the first extension portion 114 and the first main line 112 in the defective pixel P', so that the first extension portion 114 and the first portion The main line 112 is separated. Specifically, the first separation program is, for example, a laser cutting program, which can cut the first extension portion 114 and the first main line 112 to form a separation region M1 (as shown in FIG. 3B). In other words, the first extension 114, the resistive layer 140, the dielectric layer 150, and the protective layer 160 located in the separation region M1 may form openings to expose the substrate 102. In detail, according to the repairing method of the present invention, the first extending portion 114 can be disconnected from the first main line 112 to achieve the effect of repairing. As a result, the defective pixel P' connected to the first main line 112 will lose its input of the signal and stop operating. In addition, the other pixel structure P2 connected to the first main line 112 will maintain normal operation.
另外，本實施例所述之修補方法也可以對缺陷畫素P’中的第二延伸部124的連接部124a與重疊部124b進行第二分離程序L2，以使連接部124a與重疊部124b分離。具體而言，所述第二分離程序L2例如為雷射切割程序，其可以將第二延伸部124中的連接部124a以及重疊部124b進行切割而形成一分離區域M2。此外，位於此分離區域M2中的電阻層140、介電層150、重疊部124b以及保護層160會形成開孔以暴露出基板102。詳細而言，根據本發明所述之修補方法，主要是能夠使第二延伸部124中的連接部124a以及重疊部124b斷開即可達到修補的效果。如此一來，連接缺陷畫素P’的連接部124a與重疊部124b之間就會形成斷路，所述的缺陷畫素P’將與其他正常的畫素結構P2獨立地失去傳輸訊號。因此，第一主線112或第二主線122仍為連續的傳輸線路。更佳的是，第二延伸部124亦為連續的傳輸線路而不受修補動作影響。因此，本實施例之修補方法可以針對單一的缺陷畫素進行修補，而讓其他與第二延伸部124連接的畫素結構在修補之後仍具有正常的功效，而使得場發射示顯示器100b維持高良率的輸出顯示品質。值得說明的是，所述第一分離程序L1以及第二分離程序L2可以擇一進行，或是同時進行，本發明不以此為限。In addition, the repairing method according to the embodiment may perform the second separating procedure L2 on the connecting portion 124a and the overlapping portion 124b of the second extending portion 124 in the defective pixel P' to separate the connecting portion 124a from the overlapping portion 124b. . Specifically, the second separation program L2 is, for example, a laser cutting program that cuts the connection portion 124a and the overlapping portion 124b in the second extension portion 124 to form a separation region M2. In addition, the resistive layer 140, the dielectric layer 150, the overlapping portion 124b, and the protective layer 160 located in the separation region M2 may form openings to expose the substrate 102. In detail, according to the repairing method of the present invention, it is mainly possible to achieve the effect of repair by disconnecting the connecting portion 124a and the overlapping portion 124b in the second extending portion 124. As a result, an open circuit is formed between the connecting portion 124a connecting the defective pixel P' and the overlapping portion 124b, and the defective pixel P' will lose the transmission signal independently of the other normal pixel structures P2. Therefore, the first main line 112 or the second main line 122 is still a continuous transmission line. More preferably, the second extension 124 is also a continuous transmission line and is not affected by the repairing action. Therefore, the repairing method of the embodiment can be repaired for a single defective pixel, and the other pixel structures connected to the second extending portion 124 still have normal functions after repairing, so that the field emission display display 100b maintains high quality. The output of the rate shows the quality. It should be noted that the first separation procedure L1 and the second separation procedure L2 may be performed alternatively or simultaneously, and the invention is not limited thereto.
圖4為本發明另一實施例中場發射式顯示器的修補方法示意圖。在此，以圖2A中的場發射式顯示器100b為例說明，當然，場發射式顯示器100a也可以使用相同的修補方式進行修補，本發明不以此為限。請參考圖4，本實施之場發射式顯示器100b的修補方法包括提供場發射式顯示器100b，場發射式顯示器100b具有多個畫素結構P2，而多個畫素結構P2的其中一個為缺陷畫素P’。須說明的是，為清楚繪示修補的方式，在圖4中僅繪示場發射式顯示器100b中的缺陷畫素P’，而省略繪示場發射式顯示器的其他構件。舉例而言，當本實施例的缺陷畫素P’中具有多個微粒子U時，所述微粒子U將造成缺陷畫素P’的顯示功能產生異常。因此，本實施例之場發射式顯示器100b的修補方法就是針對缺陷畫素P’中的第一延伸部114與第一主線112進行第一分離程序L1。所述第一分離程序L1使第一延伸部114與第一主線112分離。如此一來，與第一主線114連接的缺陷畫素P’會失去訊號傳輸的來源而失去效能。而與第一主線114連接的其他畫素結構P2則可以維持正常的效能。另外，本實施例所述之修補方法也可以針對缺陷畫素P’中的第二主線122以及第二延伸部124進行第二分離程序L2，而使第二主線122以及第二延伸部124分離。如此一來，與第二延伸部124連接的缺陷畫素P’將失去效能，而與第二主線122連接的其他畫素結構P2則可以維持正常的運作，不受修補動作之影響。值得說明的是，所述第一分離程序L1以及第二分離程序L2可以擇一進行，或是同時進行，本發明不以此為限。FIG. 4 is a schematic diagram of a repair method of a field emission type display according to another embodiment of the present invention. Here, the field emission display 100b in FIG. 2A is taken as an example for description. Of course, the field emission display 100a can also be repaired by using the same repairing method, and the present invention is not limited thereto. Referring to FIG. 4, the repair method of the field emission display 100b of the present embodiment includes providing a field emission display 100b having a plurality of pixel structures P2, and one of the plurality of pixel structures P2 is a defect drawing. Prime P'. It should be noted that, in order to clearly illustrate the manner of repair, only the defective pixel P' in the field emission type display 100b is shown in Fig. 4, and other components of the field emission type display are omitted. For example, when the defective pixel P' of the present embodiment has a plurality of fine particles U, the fine particles U cause an abnormality in the display function of the defective pixel P'. Therefore, the repair method of the field emission display 100b of the present embodiment is to perform the first separation procedure L1 for the first extension 114 in the defective pixel P' and the first main line 112. The first separation program L1 separates the first extension portion 114 from the first main line 112. As a result, the defective pixel P' connected to the first main line 114 loses the source of the signal transmission and loses its effectiveness. The other pixel structure P2 connected to the first main line 114 can maintain normal performance. In addition, the repairing method described in this embodiment may also perform the second separating procedure L2 for the second main line 122 and the second extending portion 124 in the defective pixel P', and separate the second main line 122 and the second extending portion 124. . As a result, the defective pixel P' connected to the second extension portion 124 will lose its performance, and the other pixel structure P2 connected to the second main line 122 can maintain normal operation without being affected by the repairing action. It should be noted that the first separation procedure L1 and the second separation procedure L2 may be performed alternatively or simultaneously, and the invention is not limited thereto.
特別說明的是，所述第一分離程序L1與所述第二分離程序L2可以是相同或不相同的分離程序，其中，所述第一分離程序L1例如為紅寶石雷射(ruby laser)切割程序、二氧化碳雷射(CO2 laser)切割程序或其他適合的程序。而所述第二分離程序L2例如為紅寶石雷射(ruby laser)切割程序、二氧化碳雷射(CO2 laser)切割程序或其他適合的程序。Specifically, the first separation program L1 and the second separation program L2 may be the same or different separation programs, wherein the first separation program L1 is, for example, a ruby laser cutting program. , CO 2 laser cutting program or other suitable program. The second separation program L2 is, for example, a ruby laser cutting program, a CO 2 laser cutting program, or other suitable program.
綜上所述，本發明之場發射式顯示器的畫素結構中，將電子放射器設置在第一延伸部與第二延伸部的重疊區域中，以作為發射顯示區。當場發射式顯示器的其中一個畫素結構發生缺陷，例如構件之間的不當短路或是構件之間的不當斷路等，可以針對連接此缺陷畫素的延伸部與主線進行分離的程序。此時，主線仍維持連續的傳輸線路而不受修補動作的影響。換言之，本發明之場發射式顯示器的修補方法可以針對單一的缺陷畫素進行獨立地修補，而使其他畫素結構正常地運作，如此一來，場發射式顯示器將維持良好的輸出品質。In summary, in the pixel structure of the field emission type display of the present invention, the electron emitter is disposed in an overlapping area of the first extension portion and the second extension portion as an emission display area. In the case where one of the pixel structures of the field emission display is defective, such as an improper short circuit between members or an improper disconnection between members, a procedure for separating the extension portion connecting the defect pixel from the main line may be performed. At this time, the main line still maintains a continuous transmission line without being affected by the repairing action. In other words, the repair method of the field emission display of the present invention can be independently repaired for a single defective pixel, and the other pixel structures operate normally, so that the field emission display will maintain good output quality.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100a、100b．．．場發射式顯示器100a, 100b. . . Field emission display
102．．．基板102. . . Substrate
110．．．第一導線110. . . First wire
112．．．第一主線112. . . First main line
114．．．第一延伸部114. . . First extension
120．．．第二導線120. . . Second wire
122．．．第二主線122. . . Second main line
124．．．第二延伸部124. . . Second extension
124a．．．連接部124a. . . Connection
124b．．．重疊部124b. . . Overlap
126．．．金屬導線126. . . Metal wire
130．．．電子放射器130. . . Electron emitter
140．．．電阻層140. . . Resistance layer
150．．．介電層150. . . Dielectric layer
150S．．．開口150S. . . Opening
160．．．保護層160. . . The protective layer
200．．．間隙結構200. . . Gap structure
300．．．陽極結構300. . . Anode structure
D1．．．第一延伸方向D1. . . First extension direction
D2．．．第二延伸方向D2. . . Second extension direction
A-A’、B-B’、C-C’．．．剖線A-A’, B-B’, C-C’. . . Section line
I．．．重疊區域I. . . Overlapping area
M．．．分離區域M. . . Separation area
P1、P2．．．畫素結構P1, P2. . . Pixel structure
P’．．．缺陷畫素P’. . . Defective pixel
e．．．電子束e. . . Electron beam
L1．．．第一分離程序L1. . . First separation procedure
L2．．．第二分離程序L2. . . Second separation procedure
圖1A是本發明一實施例之場發射式顯示器的畫素結構的上視示意圖。1A is a top plan view showing a pixel structure of a field emission type display according to an embodiment of the present invention.
圖1B是沿圖1A中剖線A-A’的剖面示意圖。Fig. 1B is a schematic cross-sectional view taken along line A-A' of Fig. 1A.
圖1C為圖1A之畫素結構應用於場發射式顯示器時，對應圖1A之剖線A-A’示意圖。1C is a schematic view of the cross-sectional line A-A' of FIG. 1A when the pixel structure of FIG. 1A is applied to a field emission type display.
圖2A為本發明另一實施例之畫素結構的剖面示意圖。2A is a cross-sectional view showing a pixel structure according to another embodiment of the present invention.
圖2B是沿圖4A中剖線C-C’的剖面示意圖。Fig. 2B is a schematic cross-sectional view taken along line C-C' of Fig. 4A.
圖2C為圖2A之畫素結構應用於場發射式顯示器時，對應圖2A之剖線B-B’的示意圖。Fig. 2C is a schematic view corresponding to the line B-B' of Fig. 2A when the pixel structure of Fig. 2A is applied to a field emission type display.
圖3A為本發明另一實施例中場發射式顯示器的修補方法的示意圖。FIG. 3A is a schematic diagram of a repair method of a field emission type display according to another embodiment of the present invention.
圖3B為沿圖3A中剖線C-C’的剖面示意圖。Fig. 3B is a schematic cross-sectional view taken along line C-C' of Fig. 3A.
圖4為本發明一實施例中場發射式顯示器的修補方法示意圖。4 is a schematic diagram of a repair method of a field emission type display according to an embodiment of the present invention.
110．．．第一導線110. . . First wire
112．．．第一主線112. . . First main line
114．．．第一延伸部114. . . First extension
120．．．第二導線120. . . Second wire
122．．．第二主線122. . . Second main line
124．．．第二延伸部124. . . Second extension
124a．．．連接部124a. . . Connection
124b．．．重疊部124b. . . Overlap
130．．．電子放射器130. . . Electron emitter
D1．．．第一延伸方向D1. . . First extension direction
D2．．．第二延伸方向D2. . . Second extension direction
A-A’．．．剖線A-A’. . . Section line
I．．．重疊區域I. . . Overlapping area
P1．．．畫素結構P1. . . Pixel structure
Claims (10)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149874A TWI445037B (en) | 2011-12-30 | 2011-12-30 | Pixel structure of field emission display device and reparing method thereof |
| CN201210123882.1A CN102637569B (en) | 2011-12-30 | 2012-04-25 | Pixel structure of field emission display and repairing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149874A TWI445037B (en) | 2011-12-30 | 2011-12-30 | Pixel structure of field emission display device and reparing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201327614A true TW201327614A (en) | 2013-07-01 |
| TWI445037B TWI445037B (en) | 2014-07-11 |
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| TW100149874A TWI445037B (en) | 2011-12-30 | 2011-12-30 | Pixel structure of field emission display device and reparing method thereof |
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| Country | Link |
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| CN (1) | CN102637569B (en) |
| TW (1) | TWI445037B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502263B (en) * | 2013-07-25 | 2015-10-01 | Au Optronics Corp | Pixel structure, display panel and fabrication method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4196490B2 (en) * | 1999-05-18 | 2008-12-17 | ソニー株式会社 | Cathode panel for cold cathode field emission display, cold cathode field emission display, and method for manufacturing cathode panel for cold cathode field emission display |
| JP3710441B2 (en) * | 2001-09-07 | 2005-10-26 | キヤノン株式会社 | Electron source substrate and display device using the same |
| TWI435295B (en) * | 2011-11-11 | 2014-04-21 | Au Optronics Corp | Pixel structure and field emission device |
-
2011
- 2011-12-30 TW TW100149874A patent/TWI445037B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502263B (en) * | 2013-07-25 | 2015-10-01 | Au Optronics Corp | Pixel structure, display panel and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI445037B (en) | 2014-07-11 |
| CN102637569B (en) | 2014-12-17 |
| CN102637569A (en) | 2012-08-15 |
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