TW201326045A - Method for producing conductive mayenite compound and electrode for fluorescent lamps - Google Patents

Method for producing conductive mayenite compound and electrode for fluorescent lamps Download PDF

Info

Publication number
TW201326045A
TW201326045A TW101142694A TW101142694A TW201326045A TW 201326045 A TW201326045 A TW 201326045A TW 101142694 A TW101142694 A TW 101142694A TW 101142694 A TW101142694 A TW 101142694A TW 201326045 A TW201326045 A TW 201326045A
Authority
TW
Taiwan
Prior art keywords
mayenite compound
sintered body
powder
titanium
conductive mayenite
Prior art date
Application number
TW101142694A
Other languages
Chinese (zh)
Other versions
TWI597240B (en
Inventor
Kazuhiro Ito
Toshinari Watanabe
Satoru Watanabe
Naomichi Miyakawa
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201326045A publication Critical patent/TW201326045A/en
Application granted granted Critical
Publication of TWI597240B publication Critical patent/TWI597240B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00Compounds of aluminium
    • C01F7/02Aluminium oxide; Aluminium hydroxide; Aluminates
    • C01F7/16Preparation of alkaline-earth metal aluminates or magnesium aluminates; Aluminium oxide or hydroxide therefrom
    • C01F7/164Calcium aluminates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00Compounds of aluminium
    • C01F7/78Compounds containing aluminium and two or more other elements, with the exception of oxygen and hydrogen
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/44Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/6261Milling
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/638Removal thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/50Solid solutions
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208Calcium oxide or oxide-forming salts thereof, e.g. lime
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444Halide containing anions, e.g. bromide, iodate, chlorite
    • C04B2235/445Fluoride containing anions, e.g. fluosilicate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/652Reduction treatment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6587Influencing the atmosphere by vaporising a solid material, e.g. by using a burying of sacrificial powder
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00Gas-discharge or vapour-discharge lamps
    • H01J61/02Details
    • H01J61/04Electrodes; Screens; Shields
    • H01J61/06Main electrodes
    • H01J61/067Main electrodes for low-pressure discharge lamps
    • H01J61/0675Main electrodes for low-pressure discharge lamps characterised by the material of the electrode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

A method for producing a conductive mayenite compound, which is characterized by comprising: (1) a step wherein a mayenite compound powder is prepared; and (2) a step wherein a material to be processed, which contains the mayenite compound powder prepared in the step (1), is arranged so as not to be in contact with a titanium source in the presence of a carbon monoxide gas and titanium vapor supplied from the titanium source and the material to be processed is maintained at a temperature within the range from 1,230 DEG C to 1,380 DEG C in an inert gas atmosphere other than a nitrogen atmosphere or in a reduced pressure environment.

Description

導電性鈣鋁石化合物之製造方法及螢光燈用之電極 Method for producing conductive mayenite compound and electrode for fluorescent lamp

本發明係關於一種導電性鈣鋁石化合物之製造方法。 The present invention relates to a method of producing a conductive mayenite compound.

鈣鋁石化合物具有以12CaO.7Al2O3所表示之代表組成,且持有具有三維地連結之直徑約0.4 nm之空隙(籠)的特徵性之晶體結構。構成該籠之骨架帶正電荷,每單位晶格形成12個籠。由於該籠之1/6滿足晶體之電中性條件,故而內部被氧離子所佔據。然而,該籠內之氧離子具有與構成骨架之其他氧離子化學性不同之特性,因此,籠內之氧離子尤其是稱為自由氧離子。鈣鋁石化合物亦記載為[Ca24Al28O64]4+.2O2-(非專利文獻1)。 The mayenite compound has 12CaO. A representative composition represented by 7Al 2 O 3 and possessing a characteristic crystal structure having a void (cage) having a diameter of about 0.4 nm which is three-dimensionally joined. The skeleton constituting the cage is positively charged, and 12 cages are formed per unit lattice. Since 1/6 of the cage satisfies the electrical neutral condition of the crystal, the inside is occupied by oxygen ions. However, the oxygen ions in the cage have different chemical properties from the other oxygen ions constituting the skeleton, and therefore, the oxygen ions in the cage are especially called free oxygen ions. The mayenite compound is also described as [Ca 24 Al 28 O 64 ] 4+ . 2O 2- (Non-Patent Document 1).

於將鈣鋁石化合物之籠中之自由氧離子之一部分或全部與電子進行取代之情形時,對鈣鋁石化合物賦予導電性。其原因在於:包合於鈣鋁石化合物之籠內之電子不太受籠所約束,可於晶體中自由移動(專利文獻1)。具有此種導電性之鈣鋁石化合物尤其是稱為「導電性鈣鋁石化合物」。 When a part or all of the free oxygen ions in the cage of the mayenite compound are substituted with electrons, the mayenite compound is imparted with conductivity. The reason for this is that the electrons contained in the cage of the mayenite compound are less constrained by the cage and can move freely in the crystal (Patent Document 1). The mayenite compound having such conductivity is especially called a "conductive mayenite compound".

然而,於將導電性鈣鋁石化合物用作例如螢光燈等之電極材料之情形時,對導電性鈣鋁石化合物要求有3.0×1020 cm-3以上之較高之電子密度。其原因在於:於將電子密度低於3.0×1020 cm-3之導電性鈣鋁石化合物用作電極之情形時,可產生在使用時於電極中產生焦耳熱而使電極成為高溫之問題。又,於每次點燈時,若於電極中產生此種焦耳熱,則對電極反覆施加熱應力之結果為,亦有於電極中產 生龜裂或破碎而使電極破損之虞。 However, when the conductive mayenite compound is used as an electrode material such as a fluorescent lamp, a higher electron density of 3.0 × 10 20 cm -3 or more is required for the conductive mayenite compound. The reason for this is that when a conductive mayenite compound having an electron density of less than 3.0 × 10 20 cm -3 is used as an electrode, there is a problem that Joule heat is generated in the electrode at the time of use to make the electrode high temperature. Further, when such Joule heat is generated in the electrode at each lighting, as a result of applying thermal stress to the electrode, there is a possibility that cracks or breakage occur in the electrode to break the electrode.

再者,關於具有較高之電子密度之導電性鈣鋁石化合物之製造,於專利文獻2中揭示有將二氧化矽玻璃管用作容器,於包含金屬鈦之真空氛圍下對鈣鋁石化合物之單晶體進行熱處理,藉此,可製造具有3.0×1020 cm-3以上之電子密度之導電性鈣鋁石化合物製之構件。 Further, regarding the production of a conductive mayenite compound having a high electron density, Patent Document 2 discloses that a ceria glass tube is used as a container, and a mayenite compound is used in a vacuum atmosphere containing titanium metal. The single crystal is subjected to heat treatment, whereby a member made of a conductive mayenite compound having an electron density of 3.0 × 10 20 cm -3 or more can be produced.

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1:國際公開第2005/000741號 Patent Document 1: International Publication No. 2005/000741

專利文獻2:國際公開第2006/129674號 Patent Document 2: International Publication No. 2006/129674

非專利文獻Non-patent literature

非專利文獻1:F. M. Lea, C. H. Desch, The Chemistry of Cement and Concrete, 2nd ed., p. 52, Edward Arnold & Co., London, 1956 Non-Patent Document 1: F. M. Lea, C. H. Desch, The Chemistry of Cement and Concrete, 2nd ed., p. 52, Edward Arnold & Co., London, 1956

如上所述,藉由於包含金屬鈦之真空氛圍下對鈣鋁石化合物之單晶體進行熱處理,可製造具有3.0×1020 cm-3以上之較高之電子密度之導電性鈣鋁石化合物製之構件。 As described above, by heat-treating a single crystal of the mayenite compound in a vacuum atmosphere containing titanium metal, a member made of a conductive mayenite compound having a higher electron density of 3.0 × 10 20 cm -3 or more can be produced. .

然而,以該方法所獲得之導電性鈣鋁石化合物製之構件具有如下特徵:於表面上具有相對較厚之「表面層」。 However, the member made of the conductive mayenite compound obtained by this method has the feature of having a relatively thick "surface layer" on the surface.

此處,於本案中,所謂「表面層」係指於被處理體之熱處理之過程中,藉由被處理體之表面與環境中之成分、或鈣鋁石化合物之籠中之自由氧離子進行反應而形成之層, 且具有與鈣鋁石化合物不同之相組成之層之總稱。 Here, in the present invention, the term "surface layer" means that during the heat treatment of the object to be processed, the surface of the object to be treated and the components in the environment, or the free oxygen ions in the cage of the mayenite compound are used. The layer formed by the reaction, And a general term for a layer composed of a phase different from the mayenite compound.

於將具有構件之內部之相組成即與鈣鋁石化合物不同之相組成之此種「表面層」的導電性鈣鋁石化合物製之構件用作例如螢光燈之電極之情形時,可產生如下之問題。 When a member made of such a "surface layer" conductive mayenite compound having a phase composition inside the member, that is, a phase different from the mayenite compound, is used as, for example, an electrode of a fluorescent lamp, it may be produced. The following questions.

螢光燈之電極必需於使用螢光燈之後,儘可能快速地發揮穩定之特性。 The electrodes of the fluorescent lamp must be stable as quickly as possible after using the fluorescent lamp.

關於該方面,於將「表面層」較薄之導電性鈣鋁石化合物製之構件用作電極之情形時,「表面層」因電極之濺鍍而相對較快速地消耗、去除。因此,於該情形時,於開始使用螢光燈之後,「表面層」消失,直至特性穩定化之時間相對縮短。 In this case, when a member made of a conductive mayenite compound having a thin "surface layer" is used as an electrode, the "surface layer" is relatively quickly consumed and removed by sputtering of the electrode. Therefore, in this case, after the start of the use of the fluorescent lamp, the "surface layer" disappears until the time during which the characteristics are stabilized is relatively shortened.

與此相對,於將具有較厚之「表面層」之導電性鈣鋁石化合物製之構件用作電極之情形時,該「表面層」直至因濺鍍消耗而完全去除需要較長之時間。因此,於該情形時,於開始使用螢光燈之後,產生如下問題:經長時間無法獲得所需之特性,或者特性不會穩定。 On the other hand, when a member made of a conductive mayenite compound having a thick "surface layer" is used as an electrode, it takes a long time until the "surface layer" is completely removed by sputtering. Therefore, in this case, after the start of the use of the fluorescent lamp, there arises a problem that the desired characteristics cannot be obtained over a long period of time, or the characteristics are not stabilized.

再者,為了避免上述問題而考慮到如下情況:於將構件安裝於螢光燈之上一階段中,藉由加工而去除導電性鈣鋁石化合物製之構件之「表面層」。然而,通常,此種「表面層」牢固地固著於構件上。又,通常於大多情況下,電極具有複雜之形狀,預先藉由加工而去除電極之「表面層」極其困難。因此,構件之「表面層」必需利用螢光燈之放電現象而於螢光燈之使用過程中去除。 Further, in order to avoid the above problem, it is considered that the "surface layer" of the member made of the conductive mayenite compound is removed by processing in one stage of mounting the member on the fluorescent lamp. However, in general, such a "surface layer" is firmly fixed to the member. Further, in many cases, the electrode usually has a complicated shape, and it is extremely difficult to remove the "surface layer" of the electrode by processing in advance. Therefore, the "surface layer" of the member must be removed during use of the fluorescent lamp by the discharge phenomenon of the fluorescent lamp.

如上所述,形成於導電性鈣鋁石化合物製之構件之表面 上之「表面層」必需儘可能變薄以使螢光燈迅速穩定運轉。 As described above, formed on the surface of a member made of a conductive mayenite compound The "surface layer" on the top must be as thin as possible to allow the fluorescent lamp to operate quickly and stably.

本發明係鑒於此種問題而成者,本發明之目的在於提供一種導電性鈣鋁石化合物之製造方法,該導電性鈣鋁石化合物不太會形成「表面層」且具有較高之電子密度。 The present invention has been made in view of such a problem, and an object of the present invention is to provide a method for producing a conductive mayenite compound which does not form a "surface layer" and has a high electron density. .

本發明提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備鈣鋁石化合物之粉末;及(2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之鈣鋁石化合物之粉末之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 The present invention provides a method for producing a conductive mayenite compound, comprising the steps of: (1) preparing a powder of a mayenite compound; and (2) carbon monoxide gas and a source of titanium In the presence of the supplied titanium vapor, the object to be treated containing the powder of the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, and is subjected to an inert gas atmosphere other than nitrogen, or The object to be processed is maintained at a temperature in the range of 1230 ° C to 1380 ° C under a pressurized atmosphere.

此處,於本發明之製造方法中,包含上述鈣鋁石化合物之粉末之被處理體亦可為包含上述鈣鋁石化合物之粉末之成形體。 Here, in the production method of the present invention, the object to be treated containing the powder of the mayenite compound may be a molded body of the powder containing the mayenite compound.

尤其是上述被處理體亦可藉由將包含上述鈣鋁石化合物之粉末之成形體安裝於導電性構件而構成。 In particular, the object to be processed may be formed by attaching a molded body of a powder containing the mayenite compound to a conductive member.

又,本發明提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備包含鈣鋁石化合物之燒結體;及 (2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之包含鈣鋁石化合物之燒結體的被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 Moreover, the present invention provides a method of producing a conductive mayenite compound, comprising the steps of: (1) preparing a sintered body comprising a mayenite compound; (2) in the presence of the carbon monoxide gas and the titanium vapor supplied from the titanium source, the object to be processed containing the sintered body containing the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, The object to be treated is maintained at a temperature in the range of 1230 ° C to 1380 ° C in an inert gas atmosphere other than nitrogen or a reduced pressure atmosphere.

又,本發明提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備預燒粉之成形體;及(2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之預燒粉之成形體之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 Further, the present invention provides a method for producing a conductive mayenite compound, comprising the steps of: (1) preparing a preform of a calcined powder; and (2) carbon monoxide gas and titanium In the presence of the titanium vapor supplied from the source, the object to be processed including the molded body of the calcined powder prepared in the above step (1) is placed in contact with the titanium source, and is placed in an inert gas atmosphere other than nitrogen. The object to be treated is maintained at a temperature ranging from 1230 ° C to 1380 ° C under a reduced pressure atmosphere.

此處,於本發明之製造方法中,上述(2)之步驟亦可於將上述被處理體及上述鈦源放入包含碳之容器中之狀態下進行。 Here, in the production method of the present invention, the step (2) may be carried out in a state in which the object to be processed and the titanium source are placed in a container containing carbon.

又,於本發明之製造方法中,於上述(2)之步驟後所獲得之導電性鈣鋁石化合物亦可具有3.0×1020 cm-3以上之電子密度。 Further, in the production method of the present invention, the conductive mayenite compound obtained after the step (2) may have an electron density of 3.0 × 10 20 cm -3 or more.

又,於本發明之製造方法中,上述被處理體包含氟(F),且於上述(2)之步驟後,亦可獲得包含氟之導電性鈣鋁石化合物。 Further, in the production method of the present invention, the object to be treated contains fluorine (F), and after the step (2), a conductive mayenite compound containing fluorine may be obtained.

進而,本發明提供一種螢光燈用之電極,其包含藉由上述製造方法而製造之高導電性鈣鋁石化合物。 Further, the present invention provides an electrode for a fluorescent lamp comprising the highly conductive mayenite compound produced by the above production method.

進而,本發明提供一種製造方法,其係使用如上所述之製造方法,製造包含導電性鈣鋁石化合物之成膜用之靶之方法。 Furthermore, the present invention provides a production method for producing a target for film formation comprising a conductive mayenite compound by the above-described production method.

本發明可提供一種導電性鈣鋁石化合物之製造方法,該導電性鈣鋁石化合物不太會形成「表面層」且具有較高之電子密度。 The present invention can provide a method for producing a conductive mayenite compound which does not form a "surface layer" and has a high electron density.

本發明之第1態樣提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備鈣鋁石化合物之粉末;及(2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之鈣鋁石化合物之粉末之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 A first aspect of the present invention provides a method of producing a method for producing a conductive mayenite compound, comprising the steps of: (1) preparing a powder of a mayenite compound; and (2) carbon monoxide gas And the object to be treated containing the powder of the mayenite compound prepared in the above step (1) in a state in which it is not in contact with the titanium source in the presence of the titanium vapor supplied from the titanium source, and is inert to nitrogen removal The object to be treated is maintained at a temperature in the range of 1230 ° C to 1380 ° C in a gas atmosphere or a reduced pressure environment.

又,本發明之第2態樣提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備包含鈣鋁石化合物之燒結體;及 (2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之包含鈣鋁石化合物之燒結體的被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 Further, a second aspect of the present invention provides a method of producing a method for producing a conductive mayenite compound, comprising the steps of: (1) preparing a sintered body comprising a mayenite compound; (2) in the presence of the carbon monoxide gas and the titanium vapor supplied from the titanium source, the object to be processed containing the sintered body containing the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, The object to be treated is maintained at a temperature in the range of 1230 ° C to 1380 ° C in an inert gas atmosphere other than nitrogen or a reduced pressure atmosphere.

又,本發明之第3態樣提供一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)備預燒粉之成形體;及(2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之預燒粉之成形體之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 Further, a third aspect of the present invention provides a method of producing a method for producing a conductive mayenite compound, comprising the steps of: (1) preparing a preform of a calcined powder; and (2) In the presence of the carbon monoxide gas and the titanium vapor supplied from the titanium source, the object to be processed including the molded body of the calcined powder prepared in the above step (1) is placed in contact with the titanium source, and is removed from the nitrogen. The object to be processed is maintained at a temperature in the range of 1230 ° C to 1380 ° C in an inert gas atmosphere or a reduced pressure atmosphere.

於本案中,所謂「鈣鋁石化合物」,係具有籠(cage)結構之12CaO.7Al2O3(以下亦稱為「C12A7」)及具有與C12A7同等之晶體結構之化合物(同型化合物)之總稱。 In this case, the so-called "calcium-alumina compound" is a 12CaO with a cage structure. A general term for 7Al 2 O 3 (hereinafter also referred to as "C12A7") and a compound having the same crystal structure as C12A7 (isotype compound).

又,於本案中,所謂「導電性鈣鋁石化合物」,係表示籠中所含之「自由氧離子」之一部分或全部經電子取代之電子密度為1.0×1018 cm-3以上之鈣鋁石化合物。全部自由氧離子經電子取代時之電子密度為2.3×1021 cm-3Further, in the present invention, the "conductive mayenite compound" means a part or all of the "free oxygen ions" contained in the cage, and the electron density of the electrons substituted by electrons is 1.0 × 10 18 cm -3 or more. Stone compound. The electron density of all free oxygen ions substituted by electrons was 2.3 × 10 21 cm -3 .

因此,於「鈣鋁石化合物」中包含「導電性鈣鋁石化合物」及「非導電性鈣鋁石化合物」。 Therefore, "a mayenite compound" and "a non-conductive mayenite compound" are included in the "calcium-aluminum compound".

於本發明中,所製造之「導電性鈣鋁石化合物」之電子密度為3.0×1020 cm-3以上,從而可獲得能夠用作燈之電極之「導電性鈣鋁石化合物」。以下,將此種電子密度為3.0×1020 cm-3以上之導電性鈣鋁石化合物尤其稱為「高導電性鈣鋁石化合物」。 In the present invention, the "conductive mayenite compound" produced has an electron density of 3.0 × 10 20 cm -3 or more, and a "conductive mayenite compound" which can be used as an electrode of a lamp can be obtained. Hereinafter, the conductive mayenite compound having an electron density of 3.0 × 10 20 cm -3 or more is particularly referred to as "a highly conductive mayenite compound".

再者,通常,導電性鈣鋁石化合物之電子密度係根據鈣鋁石化合物之電子密度,以兩種方法進行測定。於電子密度為1.0×1018 cm-3~未達3.0×1020 cm-3之情形時,電子密度係測定導電性鈣鋁石化合物粉末之擴散反射,根據經Kubelka-Munk轉換(Kubelka-Munk transformation)之吸收光譜之2.8 eV(波長443 nm)之吸光度(Kubelka-Munk轉換值)而算出。該方法係利用電子密度與Kubelka-Munk轉換值成為比率關係。以下,對校準曲線之製作方法進行說明。 Further, in general, the electron density of the conductive mayenite compound is measured by two methods depending on the electron density of the mayenite compound. When the electron density is 1.0 × 10 18 cm -3 ~ less than 3.0 × 10 20 cm -3 , the electron density is used to measure the diffuse reflection of the conductive mayenite compound powder, according to the Kubelka-Munk conversion (Kubelka-Munk) The absorbance of the absorption spectrum of 2.8 eV (wavelength 443 nm) (Kubelka-Munk conversion value) was calculated. This method uses the electron density to be proportional to the Kubelka-Munk conversion value. Hereinafter, a method of producing a calibration curve will be described.

預先製作4件電子密度不同之試樣,並預先根據電子自旋共振(ESR,Electron Spin Resonance)之訊號強度求出各自之試樣之電子密度。能夠以ESR測定之電子密度係1.0×1014 cm-3~1.0×1019 cm-3左右。若分別以對數繪製Kubelka-Munk值與以ESR求出之電子密度則成為比率關係,將其設為校準曲線。即,於該方法中,電子密度為1.0×1019 cm-3~3.0×1020 cm-3係外插校準曲線之值。 Four samples having different electron densities were prepared in advance, and the electron densities of the respective samples were determined in advance based on the signal intensity of Electron Spin Resonance (ESR). The electron density which can be measured by ESR is about 1.0 × 10 14 cm -3 to 1.0 × 10 19 cm -3 . If the Kubelka-Munk value is plotted in logarithm and the electron density obtained by ESR is plotted as a ratio, it is set as a calibration curve. That is, in this method, the electron density is a value of an extrapolation calibration curve of 1.0 × 10 19 cm -3 to 3.0 × 10 20 cm -3 .

與此相對,於電子密度為3.0×1020 cm-3~2.3×1021 cm-3之情形時,電子密度係測定導電性鈣鋁石化合物粉末之擴散反射,根據經Kubelka-Munk轉換之吸收光譜之波峰之波長 (能量)而換算。關係式係使用下述式:n=(-(Esp-2.83)/0.199)0.782 On the other hand, in the case where the electron density is 3.0 × 10 20 cm -3 to 2.3 × 10 21 cm -3 , the electron density is a measure of the diffuse reflection of the conductive mayenite compound powder, according to the Kubelka-Munk conversion absorption. The wavelength (energy) of the peak of the spectrum is converted. The relational expression uses the following formula: n=(-(E sp -2.83)/0.199) 0.782

此處,n表示電子密度(cm-3),Esp表示進行Kubelka-Munk轉換之吸收光譜之波峰之能量(eV)。 Here, n represents an electron density (cm -3 ), and E sp represents an energy (eV) of a peak of an absorption spectrum at which Kubelka-Munk conversion is performed.

又,於本發明中,高導電性鈣鋁石化合物只要具有包含鈣(Ca)、鋁(Al)及氧(O)之C12A7晶體結構,則選自鈣(Ca)、鋁(Al)及氧(O)中之至少一種原子之一部分亦可經其他原子或原子團取代。例如,鈣(Ca)之一部分亦可經選自由鎂(Mg)、鍶(Sr)、鋇(Ba)、鋰(Li)、鈉(Na)、鉻(Cr)、錳(Mn)、鈰(Ge)、鈷(Co)、鎳(Ni)及銅(Cu)所組成之群中之1種以上之原子取代。又,鋁(Al)之一部分亦可經選自由矽(Si)、鍺(Ge)、硼(B)、鎵(Ga)、鈦(Ti)、錳(Mn)、鐵(Fe)、鈰(Ce)、鐠(Pr)、鈧(Sc)、鑭(La)、釔(Y)、銪(Eu)、鐿(Yb)、鈷(Co)、鎳(Ni)及鋱(Tb)所組成之群中之1種以上之原子取代。又,籠之骨架之氧亦可經氮(N)等取代。 Further, in the present invention, the highly conductive mayenite compound is selected from the group consisting of calcium (Ca), aluminum (Al) and oxygen as long as it has a crystal structure of C12A7 containing calcium (Ca), aluminum (Al) and oxygen (O). A portion of at least one of the atoms in (O) may also be substituted with other atoms or groups of atoms. For example, a portion of calcium (Ca) may also be selected from the group consisting of magnesium (Mg), strontium (Sr), barium (Ba), lithium (Li), sodium (Na), chromium (Cr), manganese (Mn), strontium ( One or more atoms of the group consisting of Ge), cobalt (Co), nickel (Ni), and copper (Cu) are substituted. Further, a part of aluminum (Al) may also be selected from the group consisting of bismuth (Si), germanium (Ge), boron (B), gallium (Ga), titanium (Ti), manganese (Mn), iron (Fe), bismuth ( Ce), strontium (Pr), strontium (Sc), lanthanum (La), yttrium (Y), lanthanum (Eu), yttrium (Yb), cobalt (Co), nickel (Ni) and lanthanum (Tb) One or more atoms in the group are substituted. Further, the oxygen of the skeleton of the cage may be replaced by nitrogen (N) or the like.

於本發明中,導電性鈣鋁石化合物係籠內之自由氧離子之至少一部分亦可經H-、H2 -、H2-、O-、O2 -、OH-、F-、Cl-、及S2-等陰離子、或氮(N)之陰離子取代。 In the present invention, at least a part of free oxygen ions of the conductive mayenite compound was also based cages of H -, H 2 -, H 2-, O -, O 2 -, OH -, F -, Cl - And an anion such as S 2- or an anion of nitrogen (N).

如上所述,以先前之方法所獲得之高導電性鈣鋁石化合物製之構件具有如下特徵:於表面上具有相對較厚之「表面層」。 As described above, the member made of the highly conductive mayenite compound obtained by the prior method has a feature of having a relatively thick "surface layer" on the surface.

此種「表面層」係相組成與構件之內部不同,且由與鈣鋁石化合物不同之相所構成。因此,於將具有此種「表面層」之導電性鈣鋁石化合物製之構件用作例如螢光燈之電 極之情形時,必需藉由放電時之濺鍍而迅速去除「表面層」以使螢光燈穩定運轉。 The "surface layer" phase composition is different from the inside of the member and is composed of a phase different from the mayenite compound. Therefore, a member made of a conductive mayenite compound having such a "surface layer" is used as, for example, a fluorescent lamp. In the extreme case, it is necessary to quickly remove the "surface layer" by sputtering during discharge to stabilize the fluorescent lamp.

然而,於電極具有較厚之「表面層」之情形時,可產生如下問題:於開始使用螢光燈之後,直至「表面層」消失而特性穩定化之時間變長。 However, when the electrode has a thick "surface layer", there is a problem that the time until the "surface layer" disappears and the characteristic is stabilized becomes long after the start of the use of the fluorescent lamp.

本案發明者等為了應對此種問題,於各種條件下進行導電性鈣鋁石化合物之製造實驗,潛心研究製造條件對導電性鈣鋁石化合物之「表面層」之態樣造成之影響。其結果為,本案發明者等發現,於特定之溫度範圍中的包含鈣鋁石化合物之粉末之被處理體之熱處理時,當於環境中共存一氧化碳氣體與成為鈦蒸氣之鈦源時,無法使表面層不太成長而製造高導電性鈣鋁石化合物。 In order to cope with such a problem, the inventors of the present invention conducted an experiment on the production of a conductive mayenite compound under various conditions, and studied the influence of the production conditions on the "surface layer" of the conductive mayenite compound. As a result, the inventors of the present invention found that when heat treatment of the object to be treated containing the powder of the mayenite compound in a specific temperature range, when carbon monoxide gas and titanium source of titanium vapor are coexisted in the environment, the inventors cannot The surface layer is not grown to produce a highly conductive mayenite compound.

因此,本發明之高導電性鈣鋁石化合物之製造方法之第1特徵在於:於一氧化碳氣體及成為鈦蒸氣之鈦源之存在下配置被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 Therefore, the first aspect of the method for producing a highly conductive mayenite compound according to the present invention is characterized in that the object to be treated is placed in the presence of a carbon monoxide gas and a titanium source which is a titanium vapor, and is in an inert gas atmosphere other than nitrogen or The object to be treated is maintained at a temperature in the range of 1230 ° C to 1380 ° C under a reduced pressure atmosphere.

再者,藉由於一氧化碳氣體與鈦蒸氣共存之環境下進行熱處理,與先前之方法相比而顯著抑制被處理體之表面上之「表面層」之成長,作為上述之原因,考慮到以下情況。 In addition, the heat treatment in the environment in which carbon monoxide gas and titanium vapor coexist is effective in suppressing the growth of the "surface layer" on the surface of the object to be treated as compared with the prior art. For the above reasons, the following cases are considered.

如先前之製造方法,於環境中僅存在鈦蒸氣之情形時,該鈦蒸氣與環境中之氧、或鈣鋁石化合物之籠中之自由氧離子進行反應,生成氧化鈦。藉此,於作為被處理體之鈣 鋁石化合物之表面上堆積氧化鈦。此處,構成被處理體之鈣鋁石化合物為氧化物,故而與堆積之氧化鈦之親和性較高。因此,堆積於被處理體之表面上之氧化鈦與被處理體之表面牢固地結合。其後,氧化鈦亦持續堆積於被處理體之表面上,最終形成較厚之「表面層」。 As in the previous manufacturing method, when only titanium vapor is present in the environment, the titanium vapor reacts with oxygen in the environment or free oxygen ions in the cage of the mayenite compound to form titanium oxide. Thereby, in the calcium as the treated body Titanium oxide is deposited on the surface of the aluminum stone compound. Here, since the mayenite compound constituting the object to be treated is an oxide, the affinity with the deposited titanium oxide is high. Therefore, the titanium oxide deposited on the surface of the object to be processed is firmly bonded to the surface of the object to be treated. Thereafter, the titanium oxide is also continuously deposited on the surface of the object to be treated, and finally a thick "surface layer" is formed.

另一方面,於環境中鈦蒸氣與一氧化碳氣體共存之情形時,鈦蒸氣與環境中之一氧化碳氣體進行反應,生成鈦碳化物。該鈦碳化物為非氧化物,故而與構成被處理體之鈣鋁石化合物之親和性不太高。因此,即便鈦碳化物堆積於被處理體之表面上,該鈦碳化物亦不會固著於被處理體之表面上,而容易自表面脫落。因此,顯著抑制鈦碳化物之堆積物固著於被處理體之表面上或者於被處理體之表面上成長。其結果可認為,最終形成較薄之「表面層」。 On the other hand, in the case where titanium vapor and carbon monoxide gas coexist in the environment, the titanium vapor reacts with one of the carbon monoxide gases in the environment to form titanium carbide. Since the titanium carbide is non-oxide, the affinity with the mayenite compound constituting the object to be treated is not so high. Therefore, even if titanium carbide is deposited on the surface of the object to be treated, the titanium carbide is not fixed to the surface of the object to be treated, and is easily peeled off from the surface. Therefore, the deposit of titanium carbide is remarkably suppressed from adhering to the surface of the object to be processed or growing on the surface of the object to be treated. As a result, it is considered that a thin "surface layer" is finally formed.

進而,本案發明者等人發現,若於環境中僅使一氧化碳氣體與成為鈦蒸氣之鈦源共存,則產生以下問題。 Further, the inventors of the present invention have found that if only carbon monoxide gas coexists with the titanium source which becomes titanium vapor in the environment, the following problems occur.

例如,若使鈣鋁石化合物之被處理體與鈦源直接接觸,則於熱處理時,金屬鈦附著於被處理體之表面上。若於此種狀態下降低溫度直至室溫,則成為金屬鈦之固體固著於導電性鈣鋁石化合物之表面上之狀態。此種固著物係與導電性鈣鋁石化合物牢固地密著,從而難以於下一步驟中將固著物自導電性鈣鋁石化合物剝離或者去除。 For example, when the object to be treated of the mayenite compound is directly contacted with the titanium source, the titanium metal adheres to the surface of the object to be treated during the heat treatment. When the temperature is lowered to room temperature in this state, the solid of titanium metal is fixed to the surface of the conductive mayenite compound. Such a fixing system is firmly adhered to the conductive mayenite compound, so that it is difficult to peel or remove the anchor from the conductive mayenite compound in the next step.

因此,本發明之第2特徵在於:以未與鈦源接觸之方式配置被處理體,於該狀態下進行被處理體之熱處理。藉此,可消除金屬鈦牢固地密著於被處理體之表面上之問 題。 Therefore, a second feature of the present invention resides in that the object to be processed is placed so as not to be in contact with the titanium source, and the object to be processed is subjected to heat treatment in this state. Thereby, the problem that the titanium metal is firmly adhered to the surface of the object to be treated can be eliminated. question.

如上所述,本發明係藉由上述兩個特徵而顯著抑制固著物之附著,並且可使「表面層」不太厚地成長而製造具有較高之電子密度之導電性鈣鋁石化合物。「表面層」之厚度例如可設為40 μm以下。 As described above, according to the present invention, the adhesion of the anchor is remarkably suppressed by the above two features, and the "surface layer" can be grown to a relatively small thickness to produce a conductive mayenite compound having a high electron density. The thickness of the "surface layer" can be, for example, 40 μm or less.

(本發明之一實施例之高導電性鈣鋁石化合物之製造方法) (Manufacturing method of high-conductivity mayenite compound according to an embodiment of the present invention)

以下,參照圖式,對本發明之一實施例之高導電性鈣鋁石化合物之製造方法進行詳細說明。 Hereinafter, a method for producing a highly conductive mayenite compound according to an embodiment of the present invention will be described in detail with reference to the drawings.

圖1係模式性地表示本發明之一實施例之高導電性鈣鋁石化合物之製造方法的流程。 Fig. 1 is a flow chart schematically showing a method for producing a highly conductive mayenite compound according to an embodiment of the present invention.

如圖1所示,該製造方法包括如下步驟:(1)備鈣鋁石化合物之粉末(步驟S110);及(2)一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之鈣鋁石化合物之粉末之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度(步驟S120)。 As shown in FIG. 1, the manufacturing method comprises the steps of: (1) preparing a powder of a mayenite compound (step S110); and (2) presenting carbon monoxide gas and titanium vapor supplied from a titanium source, The object to be treated containing the powder of the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, and the object to be processed is held in an inert gas atmosphere other than nitrogen or under a reduced pressure atmosphere. The temperature in the range of 1230 ° C to 1380 ° C (step S120).

以下,對各個步驟進行說明。 Hereinafter, each step will be described.

(步驟S110:鈣鋁石化合物粉末製備步驟) (Step S110: preparation procedure of mayenite powder)

最初,製備鈣鋁石化合物之粉末。鈣鋁石化合物之粉末係如以下所示,藉由將原料粉末加熱至高溫而合成、製造。 Initially, a powder of the mayenite compound was prepared. The powder of the mayenite compound is synthesized and produced by heating the raw material powder to a high temperature as shown below.

首先,調合用以合成鈣鋁石化合物之粉末之原料粉末。 First, a raw material powder for synthesizing a powder of the mayenite compound is blended.

原料粉末中,鈣(Ca)與鋁(Al)之比率係以換算為CaO: Al2O3之莫耳比計,較佳為13:6~10:9之範圍,更佳為12.6:6.4~11.7:7.3之範圍,更佳為12.3:6.7~11.5:7.5之範圍,進而較佳為12.2:6.8~11.8:17.2之範圍,尤佳為約12:7。於鈣(Ca)之一部分經其他原子取代之情形時,將鈣與其他原子之莫耳數視為鈣之莫耳數。於鋁(Al)之一部分經其他原子取代之情形時,將鋁與其他原子之莫耳數視為鋁之莫耳數。 In the raw material powder, the ratio of calcium (Ca) to aluminum (Al) is in terms of a molar ratio converted to CaO: Al 2 O 3 , preferably in the range of 13:6 to 10:9, more preferably 12.6:6.4. The range of ~11.7:7.3 is more preferably 12.3: 6.7 to 11.5: 7.5, and more preferably 12.2: 6.8 to 11.8: 17.2, and particularly preferably about 12: 7. When one part of calcium (Ca) is substituted by other atoms, the molar number of calcium and other atoms is regarded as the molar number of calcium. When one part of aluminum (Al) is substituted by other atoms, the molar number of aluminum and other atoms is regarded as the molar number of aluminum.

再者,原料粉末所使用之化合物只要維持上述比率則無特別限定。 In addition, the compound used for the raw material powder is not particularly limited as long as the above ratio is maintained.

原料粉末較佳為包含鋁酸鈣,或者包含選自由鈣化合物、鋁化合物、及鋁酸鈣所組成之群中之至少2種。原料粉末例如亦可為包含鈣化合物與鋁化合物之混合粉末。原料粉末例如亦可為包含鈣化合物與鋁酸鈣之混合粉末。又,原料粉末例如亦可為包含鋁化合物與鋁酸鈣之混合粉末。又,原料粉末例如亦可為包含鈣化合物、鋁化合物、及鋁酸鈣之混合粉末。進而,原料粉末例如亦可為僅包含鋁酸鈣之混合粉末。 The raw material powder preferably contains calcium aluminate or at least two selected from the group consisting of a calcium compound, an aluminum compound, and calcium aluminate. The raw material powder may be, for example, a mixed powder containing a calcium compound and an aluminum compound. The raw material powder may be, for example, a mixed powder containing a calcium compound and calcium aluminate. Further, the raw material powder may be, for example, a mixed powder containing an aluminum compound and calcium aluminate. Further, the raw material powder may be, for example, a mixed powder containing a calcium compound, an aluminum compound, and calcium aluminate. Further, the raw material powder may be, for example, a mixed powder containing only calcium aluminate.

作為鈣化合物,可列舉:碳酸鈣、氧化鈣、氫氧化鈣、碳酸氫鈣、硫酸鈣、偏磷酸鈣、草酸鈣、乙酸鈣、硝酸鈣、及鹵化鈣等。於該等之中,較佳為碳酸鈣、氧化鈣、及氫氧化鈣。 Examples of the calcium compound include calcium carbonate, calcium oxide, calcium hydroxide, calcium hydrogencarbonate, calcium sulfate, calcium metaphosphate, calcium oxalate, calcium acetate, calcium nitrate, and calcium halide. Among these, calcium carbonate, calcium oxide, and calcium hydroxide are preferred.

作為鋁化合物,可列舉:氫氧化鋁、氧化鋁、硫酸鋁、硝酸鋁、及鹵化鋁等。於該等之中,較佳為氫氧化鋁及氧化鋁。氧化鋁(氧化鋁,alumina)有α-氧化鋁、γ-氧化鋁、 δ-氧化鋁等,較佳為α-氧化鋁(氧化鋁)。 Examples of the aluminum compound include aluminum hydroxide, aluminum oxide, aluminum sulfate, aluminum nitrate, and aluminum halide. Among these, aluminum hydroxide and aluminum oxide are preferred. Alumina (alumina) has alpha-alumina, gamma-alumina, Δ-alumina or the like is preferably α-alumina (alumina).

原料粉末進而亦可包含氟(F)成分。作為氟(F)成分,例如可列舉氟化鈣(CaF2)等。於對原料粉末添加氟(F)成分之情形時,最終(於步驟S120之後)可製造於籠內導入有氟離子之高電子密度之導電性鈣鋁石化合物等。 The raw material powder may further contain a fluorine (F) component. Examples of the fluorine (F) component include calcium fluoride (CaF 2 ). When a fluorine (F) component is added to the raw material powder, finally (after step S120), a conductive mayenite compound or the like having a high electron density of fluorine ions introduced into the cage can be produced.

包含氟(F)成分之原料粉末並不限定於此,例如,亦可於如上所述之鈣化合物與鋁化合物之混合粉末中添加氟化鈣而製備。 The raw material powder containing the fluorine (F) component is not limited thereto, and for example, it may be prepared by adding calcium fluoride to the mixed powder of the calcium compound and the aluminum compound as described above.

原料粉末中之氟(F)之含量並無特別限定。氟(F)之含量例如亦可以當以如下(1)式表示最終獲得之導電性鈣鋁石化合物之化學式時,x之範圍成為0~0.60之範圍的方式選定。 The content of fluorine (F) in the raw material powder is not particularly limited. The content of the fluorine (F) may be selected, for example, when the chemical formula of the finally obtained conductive mayenite compound is represented by the following formula (1), and the range of x is in the range of 0 to 0.60.

(12-x)CaO.7Al2O3.xCaF2 (1)式 (12-x) CaO. 7Al 2 O 3 . xCaF 2 (1)

繼而,將調合而成之原料粉末保持於高溫,合成鈣鋁石化合物。合成亦可於惰性氣體環境下或真空下進行,但較佳為於大氣下進行。 Then, the blended raw material powder is kept at a high temperature to synthesize the mayenite compound. The synthesis can also be carried out under an inert gas atmosphere or under vacuum, but is preferably carried out under the atmosphere.

合成溫度並無特別限定,例如為1200℃~1415℃之範圍,較佳為1250℃~1400℃之範圍,更佳為1300℃~1350℃之範圍。於以1200℃~1415℃之溫度範圍合成之情形時,可容易獲得包含較多之C12A7之晶體結構之鈣鋁石化合物。若合成溫度過低,則有C12A7晶體結構變少之虞。另一方面,若合成溫度過高,則超過鈣鋁石化合物之熔點,故而有C12A7之晶體結構變少之虞。 The synthesis temperature is not particularly limited, and is, for example, in the range of 1200 ° C to 1415 ° C, preferably in the range of 1250 ° C to 1400 ° C, more preferably in the range of 1300 ° C to 1350 ° C. When it is synthesized at a temperature ranging from 1200 ° C to 1415 ° C, a mayenite compound containing a crystal structure of a large amount of C12A7 can be easily obtained. If the synthesis temperature is too low, there is a decrease in the crystal structure of C12A7. On the other hand, if the synthesis temperature is too high, the melting point of the mayenite compound is exceeded, so that the crystal structure of C12A7 is small.

高溫之保持時間並無特別限定,該保持時間亦根據合成 量及保持溫度等而發生變動。保持時間例如為1小時~12小時。保持時間例如較佳為2小時~10小時,更佳為4小時~8小時。藉由於高溫下將原料粉末保持2小時以上,可充分進行固相反應而獲得均質之鈣鋁石化合物。 The holding time of the high temperature is not particularly limited, and the holding time is also based on the synthesis. The amount and the temperature are kept to change. The holding time is, for example, 1 hour to 12 hours. The holding time is, for example, preferably from 2 hours to 10 hours, more preferably from 4 hours to 8 hours. By maintaining the raw material powder at a high temperature for 2 hours or more, a solid phase reaction can be sufficiently carried out to obtain a homogeneous mayenite compound.

藉由合成而獲得之鈣鋁石化合物之一部分或全部為燒結之塊狀。塊狀之鈣鋁石化合物係利用搗碎機等進行粉碎處理直至例如5 mm左右之大小。進而,利用自動研缽或乾式球磨機進行粉碎處理直至平均粒徑為10 μm~100 μm左右。此處,「平均粒徑」係指以雷射繞射散射法測定而獲得之值。以下,粉末之平均粒徑係指以相同之方法測定之值。 A part or all of the mayenite compound obtained by the synthesis is a sintered block. The bulky mayenite compound is pulverized by a pulverizer or the like to a size of, for example, about 5 mm. Further, the pulverization treatment is carried out by an automatic mortar or a dry ball mill until the average particle diameter is about 10 μm to 100 μm. Here, the "average particle diameter" means a value measured by a laser diffraction scattering method. Hereinafter, the average particle diameter of the powder means a value measured by the same method.

進而於欲獲得微細且均勻之粉末之情形時,例如藉由使用將以CnH2n+1OH(n為3以上之整數)表示之醇(例如,異丙醇)用作溶劑之濕式球磨機、或循環式珠磨機等,而可將粉末之平均粒徑微細化直至0.5 μm~50 μm。作為溶劑,無法使用水。其原因在於:鈣鋁石化合物係氧化鋁黏固劑之一成分,容易與水進行反應而生成水合物。 Further, in the case where a fine and uniform powder is to be obtained, for example, a wet type using an alcohol (for example, isopropanol) represented by C n H 2n+1 OH (n is an integer of 3 or more) as a solvent is used. A ball mill, a circulating bead mill, or the like can be used to refine the average particle diameter of the powder to 0.5 μm to 50 μm. As a solvent, water cannot be used. The reason is that the mayenite compound is one component of the alumina cement and easily reacts with water to form a hydrate.

藉由以上步驟,製備鈣鋁石化合物之粉末。 By the above steps, a powder of the mayenite compound is prepared.

以粉末之形式調整之鈣鋁石化合物亦可為導電性鈣鋁石化合物。其原因在於:導電性鈣鋁石化合物與非導電性之化合物相比粉碎性更優異。 The mayenite compound adjusted in the form of a powder may also be a conductive mayenite compound. The reason for this is that the conductive mayenite compound is more excellent in pulverizability than the non-conductive compound.

導電性鈣鋁石化合物之合成方法並無特別限定,可列舉下述方法。例如有如下方法:將鈣鋁石化合物放入附蓋碳容器中,以1600℃進行熱處理而製作(參照國際公開第2005/000741號);將鈣鋁石化合物放入附蓋碳容器中,於 氮中以1300℃進行熱處理而製作(參照國際公開第2006/129674號);將由碳酸鈣粉末與氧化鋁粉末所製作之鋁酸鈣等之粉末放入附蓋碳坩堝中,於氮中以1300℃進行熱處理而製作(參照國際公開第2010/041558號);將混合有碳酸鈣粉末與氧化鋁粉末而成之粉末放入附蓋碳坩堝中,於氮中以1300℃進行熱處理而製作(參照日本專利特開2010-132467號公報)等。 The method for synthesizing the conductive mayenite compound is not particularly limited, and the following methods can be mentioned. For example, there is a method in which a mayenite compound is placed in a capped carbon container and heat-treated at 1600 ° C (refer to International Publication No. 2005/000741); the mayenite compound is placed in a capped carbon container, The nitrogen is heat-treated at 1300 ° C (refer to International Publication No. 2006/129674); a powder of calcium aluminate or the like prepared from calcium carbonate powder and alumina powder is placed in a covered carbon crucible, and 1300 in nitrogen. It is produced by heat treatment at °C (refer to International Publication No. 2010/041558); a powder obtained by mixing calcium carbonate powder and alumina powder is placed in a covered carbon crucible and heat-treated at 1300 ° C in nitrogen (see Japanese Patent Laid-Open Publication No. 2010-132467, and the like.

導電性鈣鋁石化合物之粉碎方法與上述鈣鋁石化合物之粉碎方法相同。 The pulverization method of the conductive mayenite compound is the same as the pulverization method of the above mayenite compound.

藉由以上步驟,調整導電性鈣鋁石化合物之粉末。再者,亦可使用鈣鋁石化合物與導電性鈣鋁石化合物之混合粉末。 By the above steps, the powder of the conductive mayenite compound is adjusted. Further, a mixed powder of a mayenite compound and a conductive mayenite compound may also be used.

(步驟S120:煅燒步驟) (Step S120: calcination step)

繼而,如以下所示,藉由將包含所獲得之鈣鋁石化合物之粉末之被處理體保持於高溫下而對鈣鋁石化合物之粉末進行燒結,並且使鈣鋁石化合物之籠中之氧離子與電子進行取代(還原),製造高導電性鈣鋁石化合物。 Then, as shown below, the powder of the mayenite compound is sintered by maintaining the object to be treated containing the powder of the obtained mayenite compound at a high temperature, and the oxygen in the cage of the mayenite compound is made. The ion and electron are substituted (reduced) to produce a highly conductive mayenite compound.

作為包含鈣鋁石化合物之粉末之被處理體,亦可直接使用步驟S110中製備之粉末。然而,於通常之情形時,使用包括步驟S110中製備之鈣鋁石化合物之粉末之成形體作為被處理體。 As the object to be treated containing the powder of the mayenite compound, the powder prepared in the step S110 can also be used as it is. However, in the usual case, a shaped body comprising a powder of the mayenite compound prepared in the step S110 is used as the object to be treated.

成形體之形成方法並無特別限定,亦可使用先前之各種方法來形成成形體。例如,成形體亦可藉由包括步驟S110中製備之粉末或者包含該粉末之混練物的成形材料之加壓 成形而製備。 The method for forming the molded body is not particularly limited, and the molded body can be formed by using various methods previously described. For example, the shaped body may also be pressurized by a molding material including the powder prepared in step S110 or the kneaded material containing the powder. Prepared by shaping.

於成形材料中,視需要包含黏合劑、潤滑劑、塑化劑或溶劑。作為黏合劑,例如可使用:聚苯乙烯、聚乙烯、聚乙烯丁醛、EVA(Ethylene Vinyl Acetate,乙烯乙酸乙烯酯)樹脂、EEA(Ethylene-Ethyl Acrylat,乙烯-丙烯酸乙酯)樹脂、丙烯酸系樹脂、纖維素系樹脂(硝化纖維素、乙基纖維素)、聚環氧乙烷等。作為潤滑劑,可使用蠟類或硬脂酸。作為塑化劑,可使用鄰苯二甲酸酯。作為溶劑,可使用:如甲苯、二甲苯之類之芳香族化合物,乙酸丁酯,松脂醇,丁基卡必醇乙酸酯,以化學式CnH2n+1OH(n=1~4)表示之醇(例如異丙醇)等。若使用水作為溶劑,則鈣鋁石化合物發生因水合引起之化學反應,故而有無法獲得穩定之漿料之虞。n=1、2之醇(例如乙醇)亦有容易水合之傾向,較佳為n=3、4之醇。 In the forming material, a binder, a lubricant, a plasticizer or a solvent is optionally contained. As the binder, for example, polystyrene, polyethylene, polyvinyl butyral, EVA (Ethylene Vinyl Acetate) resin, EEA (Ethylene-Ethyl Acrylat, ethylene-ethyl acrylate) resin, acrylic acid can be used. Resin, cellulose resin (nitrocellulose, ethyl cellulose), polyethylene oxide, and the like. As the lubricant, wax or stearic acid can be used. As the plasticizer, a phthalate can be used. As the solvent, an aromatic compound such as toluene or xylene, butyl acetate, rosinol, butyl carbitol acetate, and the chemical formula C n H 2n+1 OH (n=1 to 4) can be used. An alcohol (such as isopropyl alcohol) or the like. When water is used as the solvent, the mayenite compound undergoes a chemical reaction due to hydration, so that a stable slurry cannot be obtained. The alcohol of n = 1 and 2 (e.g., ethanol) also tends to hydrate easily, and is preferably an alcohol of n = 3 or 4.

藉由對成形材料進行全張成形、擠壓成形、或射出成形,可獲得成形體。就能夠近終成形,即,可生產性良好地製造接近最終製品之形狀而言,較佳為射出成形。 The formed body can be obtained by full-sheet forming, extrusion molding, or injection molding of the molding material. It is possible to form near-finish, that is, to produce a shape close to the final product with good productivity, and preferably injection molding.

於射出成形中,預先對鈣鋁石化合物之粉末與黏合劑進行加熱混練來準備成形材料,將該成形材料投入射出成形機中,可獲得所需之形狀之成形體。例如,藉由將鈣鋁石化合物之粉末與黏合劑加熱混練並進行冷卻,獲得大小1 mm~10 mm左右之顆粒或粉末狀之成形材料。於加熱混練中,使用密閉型混練機(labo plastomill)等,藉由剪切力解散粉末之凝聚,對粉末之1次粒子塗佈黏合劑。將該成 形材料投入射出成形機中,加熱至120℃~250℃而於黏合劑中表現出流動性。模具係預先於50℃~80℃下進行加熱,以3 MPa~10 MPa之壓力對模具注入材料,藉此,可獲得所需之成形體。 In the injection molding, the powder of the mayenite compound and the binder are heated and kneaded in advance to prepare a molding material, and the molding material is placed in an injection molding machine to obtain a molded body having a desired shape. For example, by heating and mixing the powder of the mayenite compound and the binder, it is cooled to obtain a pellet or a powdery shaped material having a size of about 1 mm to 10 mm. In the heating and kneading, a cohesive agent is dispensed by a shearing force using a closed type kneading machine (labo plastomill) or the like, and a binder is applied to the primary particles of the powder. Will become The shaped material is placed in an injection molding machine and heated to 120 ° C to 250 ° C to exhibit fluidity in the adhesive. The mold is heated in advance at 50 ° C to 80 ° C, and a material is injected into the mold at a pressure of 3 MPa to 10 MPa, whereby a desired molded body can be obtained.

或者,將上述製備粉末或混練物放入模具中,對該模具進行加壓,藉此,亦可形成所需之形狀之成形體。於模具之加壓時,例如亦可利用均壓(CIP,Cold Isostatic Pressing)處理。CIP處理時之壓力並無特別限定,例如為 50 MPa~200 MPa之範圍。 Alternatively, the above-mentioned prepared powder or kneaded product is placed in a mold, and the mold is pressurized, whereby a molded body having a desired shape can be formed. When pressurizing the mold, for example, it is also possible to use a CIP (Cold Isostatic Pressing) treatment. The pressure during CIP processing is not particularly limited, for example, 50 MPa ~ 200 MPa range.

又,於製備成形體之情形且成形體包含溶劑之情形時,亦可預先將成形體於50℃~200℃之溫度範圍內保持20分鐘~2小時左右,使溶劑揮發而去除。又,於成形體包含黏合劑之情形時,較佳為預先將成形體於200℃~800℃之溫度範圍內保持30分鐘~6小時左右,或者以50℃/小時進行升溫,去除黏合劑。或者亦可同時進行兩者之處理。 Further, in the case of preparing a molded body and in the case where the molded body contains a solvent, the molded body may be previously held in a temperature range of 50 ° C to 200 ° C for about 20 minutes to 2 hours to volatilize and remove the solvent. Further, in the case where the molded body contains a binder, it is preferred that the molded body is held in a temperature range of from 200 ° C to 800 ° C for about 30 minutes to 6 hours or at a temperature of 50 ° C / hour to remove the binder. Or you can handle both at the same time.

再者,被處理體亦可將以如上所述之方法製備之成形體安裝於金屬等之導電性構件而構成。藉此,於以後之高溫處理之後,可獲得能夠直接用作螢光燈等之電極之構件。 Further, the object to be processed may be formed by attaching a molded body prepared by the above method to a conductive member such as metal. Thereby, after the high temperature treatment in the future, a member which can be directly used as an electrode of a fluorescent lamp or the like can be obtained.

導電性構件例如亦可由金屬鎳、鎳合金、鉬及鎢等所構成。又,導電性構件之形狀並無特別限定。導電性構件例如亦可為線狀、桿狀、杯狀及短條等形狀。 The conductive member may be made of, for example, metallic nickel, a nickel alloy, molybdenum, tungsten or the like. Further, the shape of the conductive member is not particularly limited. The conductive member may have a shape such as a wire shape, a rod shape, a cup shape, or a short strip.

於本發明之製造方法中,於熱處理環境中存在鈦蒸氣。然而,鈦係蒸氣壓極低之金屬,因此,於被處理體之熱處理過程中與其他金屬進行反應並生成脆弱之金屬間化合物 之可能性較少。因此,即便於被處理體中包含導電性構件之情形時,亦顯著抑制該導電性構件於熱處理後脆化或者破損之危險性。進而,於使用碳容器之情形時,蒸氣壓較低之鈦不易生成化合物,故而亦可抑制碳容器之劣化。 In the manufacturing method of the present invention, titanium vapor is present in a heat treatment environment. However, titanium is a metal whose vapor pressure is extremely low, and therefore reacts with other metals during heat treatment of the object to be processed to form a brittle intermetallic compound. Less likely. Therefore, even when the conductive member is contained in the object to be processed, the risk of embrittlement or breakage of the conductive member after heat treatment is remarkably suppressed. Further, in the case of using a carbon container, titanium having a low vapor pressure is less likely to form a compound, and thus deterioration of the carbon container can be suppressed.

繼而,於除氮以外之惰性氣體環境、或減壓環境下對成形體等被處理體進行高溫處理。藉此,進行被處理體中之鈣鋁石化合物粒子之燒結,並且鈣鋁石化含物之籠中之氧離子經電子取代,從而生成高導電性鈣鋁石化合物。 Then, the object to be processed such as a molded body is subjected to high temperature treatment in an inert gas atmosphere other than nitrogen or in a reduced pressure environment. Thereby, sintering of the mayenite compound particles in the object to be treated is performed, and oxygen ions in the cage of the calcium aluminosilicate inclusion are electronically substituted to form a highly conductive mayenite compound.

此處,如上所述,於本發明中,必需留意被處理體係於一氧化碳氣體及由鈦蒸氣源所供給之鈦蒸氣之存在下配置。 Here, as described above, in the present invention, it is necessary to pay attention to the arrangement of the treated system in the presence of carbon monoxide gas and titanium vapor supplied from a titanium vapor source.

被處理體之高溫處理係於除氮以外之惰性氣體環境、或減壓環境下實施。「減壓環境」例如亦可為壓力為100 Pa以下之環境。於惰性氣體環境、或減壓環境中,氧分壓較佳為10-5 Pa以下,更佳為10-10 Pa以下,進而較佳為10-15 Pa以下。 The high temperature treatment of the object to be processed is carried out in an inert gas atmosphere other than nitrogen or in a reduced pressure environment. The "reduced pressure environment" may be, for example, an environment having a pressure of 100 Pa or less. The oxygen partial pressure is preferably 10 -5 Pa or less, more preferably 10 -10 Pa or less, still more preferably 10 -15 Pa or less in an inert gas atmosphere or a reduced pressure atmosphere.

鈦蒸氣源並無特別限定,例如亦可為鈦粒子之層。再者,如上所述,必需留意被處理體係以未與鈦蒸氣源直接接觸之方式而於鈦蒸氣之存在下配置。 The titanium vapor source is not particularly limited, and may be, for example, a layer of titanium particles. Furthermore, as noted above, it must be noted that the system being treated is disposed in the presence of titanium vapor in a manner that is not in direct contact with the source of titanium vapor.

一氧化碳氣體亦可自外部供給至被處理體所放置之環境,但較佳為將被處理體配置於包含碳之容器中。亦可使用碳製容器,亦可將碳製片材配置於環境中。 The carbon monoxide gas may be supplied from the outside to the environment in which the object to be treated is placed, but it is preferred to arrange the object to be processed in a container containing carbon. A carbon container can also be used, or a carbon sheet can be placed in the environment.

為了供給一氧化碳氣體及鈦蒸氣,例如,亦可於附蓋碳製容器內配置被處理體與鈦層之狀態下實施加熱處理。 In order to supply the carbon monoxide gas and the titanium vapor, for example, heat treatment may be performed in a state in which the object to be treated and the titanium layer are placed in a carbon container.

於被處理體之高溫處理時,將反應環境調整為惰性氣體環境、或減壓環境之方法並無特別限定。 The method of adjusting the reaction environment to an inert gas atmosphere or a reduced pressure atmosphere at the time of high temperature treatment of the object to be processed is not particularly limited.

例如,亦可將包含碳之容器置於壓力為100 Pa以下之真空氛圍。於該情形時,壓力較佳為60 Pa以下,更佳為20 Pa以下,進而較佳為5 Pa以下,尤佳為0.1 Pa以下。 For example, a container containing carbon may be placed in a vacuum atmosphere having a pressure of 100 Pa or less. In this case, the pressure is preferably 60 Pa or less, more preferably 20 Pa or less, further preferably 5 Pa or less, and particularly preferably 0.1 Pa or less.

或者,亦可於包含碳之容器中供給氧分壓為1000 Pa以下之惰性氣體。於該情形時,供給之惰性氣體之氧分壓較佳為100 Pa以下,更佳為10 Pa以下,進而較佳為1 Pa以下,尤佳為0.1 Pa以下。 Alternatively, an inert gas having an oxygen partial pressure of 1000 Pa or less may be supplied to a vessel containing carbon. In this case, the partial pressure of oxygen supplied to the inert gas is preferably 100 Pa or less, more preferably 10 Pa or less, still more preferably 1 Pa or less, and particularly preferably 0.1 Pa or less.

惰性氣體環境亦可為氬氣環境等。 The inert gas atmosphere may also be an argon atmosphere or the like.

處理溫度為1230℃~1380℃之範圍,較佳為1280℃~1340℃之範圍,進而較佳為1290℃~1320℃之範圍。 The treatment temperature is in the range of 1230 ° C to 1380 ° C, preferably in the range of 1280 ° C to 1340 ° C, and more preferably in the range of 1290 ° C to 1320 ° C.

其原因在於:於處理溫度低於1230℃之情形時,會析出較多之異相,而有無法賦予充分之導電性之虞。又,於處理溫度高於1380℃之情形時,由於超過高導電性鈣鋁石化合物之熔點故而晶體結構會分解,電子密度變低。 The reason is that when the treatment temperature is lower than 1230 ° C, a large amount of heterophase is precipitated, and there is a possibility that sufficient conductivity cannot be imparted. Further, when the treatment temperature is higher than 1380 ° C, the crystal structure is decomposed due to the melting point of the highly conductive mayenite compound, and the electron density is lowered.

被處理體之高溫保持時間較佳為5分鐘~48小時之範圍,進而較佳為30分鐘~24小時之範圍,進而較佳為1小時~12小時之範圍,最佳為4小時~8小時。於被處理體之保持時間未達5分鐘之情形時,有無法獲得具有充分高之電子密度之導電性鈣鋁石化合物之虞,而且燒結亦不充分,有所獲得之燒結體容易變壞之虞。又,若延長保持時間則有「表面層」變厚之傾向,因此,保持時間較佳為24小時以內,保持時間更佳為12小時以內。 The high temperature retention time of the object to be treated is preferably in the range of 5 minutes to 48 hours, more preferably in the range of 30 minutes to 24 hours, further preferably in the range of 1 hour to 12 hours, and most preferably in the range of 4 hours to 8 hours. . When the holding time of the object to be treated is less than 5 minutes, there is a possibility that a conductive mayenite compound having a sufficiently high electron density cannot be obtained, and sintering is insufficient, and the obtained sintered body is easily deteriorated. Hey. Further, if the holding time is extended, the "surface layer" tends to be thick. Therefore, the holding time is preferably within 24 hours, and the holding time is preferably within 12 hours.

藉由以上步驟,可獲得「表面層」之厚度為40 μm以下且電子密度為3.0×1020 cm-3以上之高導電性鈣鋁石化合物。 By the above steps, a highly conductive mayenite compound having a "surface layer" of 40 μm or less and an electron density of 3.0 × 10 20 cm -3 or more can be obtained.

圖2係模式性地表示對被處理體進行高溫處理時所使用之裝置之一構成圖。 Fig. 2 is a view schematically showing a configuration of a device used for high-temperature treatment of a target object.

如圖2所示,裝置100之整體係由耐熱性密閉容器所構成,排氣口170與排氣系統連接。 As shown in Fig. 2, the entire apparatus 100 is composed of a heat-resistant sealed container, and the exhaust port 170 is connected to the exhaust system.

裝置100係於耐熱性密閉容器內包括:上部打開之碳容器120、配置於該碳容器120之上部之碳蓋130、及配置於碳容器120內之隔板140(例如氧化鋁板)。於碳容器120之底部配置有載置於耐熱皿(例如氧化鋁製皿)145上之金屬鈦粉末之層150作為鈦蒸氣源。 The apparatus 100 is a heat-resistant sealed container including an upper open carbon container 120, a carbon cover 130 disposed above the carbon container 120, and a separator 140 (for example, an alumina plate) disposed in the carbon container 120. A layer 150 of titanium metal powder placed on a heat-resistant dish (for example, an alumina dish) 145 is disposed at the bottom of the carbon container 120 as a titanium vapor source.

於隔板140之上部配置有被處理體160。隔板140具有如不會妨礙來自層150之鈦蒸氣到達被處理體160之構成。又,隔板140必需由高溫處理時不會與鈦蒸氣及被處理體160進行反應之材料所構成。例如,隔板140係由具有多個貫通孔之氧化鋁板所構成。 The object to be processed 160 is disposed on the upper portion of the separator 140. The separator 140 has a configuration that does not prevent the titanium vapor from the layer 150 from reaching the object to be processed 160. Further, the separator 140 must be made of a material that does not react with the titanium vapor and the object to be processed 160 when it is treated at a high temperature. For example, the separator 140 is composed of an alumina plate having a plurality of through holes.

碳容器120及碳蓋130係於被處理體160之高溫處理時成為一氧化碳氣體之供給源。即,於被處理體160之高溫保持過程中,自碳容器120及碳蓋130側產生一氧化碳氣體。 The carbon container 120 and the carbon cover 130 are supply sources of carbon monoxide gas when the object to be processed 160 is subjected to high temperature treatment. That is, carbon monoxide gas is generated from the carbon container 120 and the carbon cap 130 side during the high temperature holding process of the object to be processed 160.

該一氧化碳氣體係抑制被處理體160所含之鈣鋁石化合物粉末之表面受到氧化而形成氧化鈦層。 The carbon monoxide gas system suppresses oxidation of the surface of the mayenite compound powder contained in the object to be treated 160 to form a titanium oxide layer.

又,被處理體160所含之鈣鋁石化合物之籠中之自由氧離子係藉由自金屬鈦粉末之層150產生之鈦蒸氣,於以下 反應中經還原:2O2-+Ti → 4e-+TiO2 (2)式 Further, the free oxygen ions in the cage of the mayenite compound contained in the object to be treated 160 are reduced by the titanium vapor generated from the layer 150 of the titanium metal powder in the following reaction: 2O 2- + Ti → 4e - +TiO 2 (2)

(2)之反應中產生之氧化鈦係藉由氛圍中之一氧化碳氣體,例如於鈦碳化物為碳化鈦(TiC)之情形時,於以下反應中生成。 The titanium oxide produced in the reaction of (2) is formed by the following reaction in the case where one of the carbon oxide gases in the atmosphere, for example, titanium carbide is titanium carbide (TiC).

TiO2+4CO → TiC+3CO2 (3)式 TiO 2 +4CO → TiC+3CO 2 (3)

鈦碳化物與鈣鋁石化合物之親和性較差而不會固著。進而於該熱處理溫度區中亦不會燒結,故而可認為容易除外。 Titanium carbides have poor affinity with mayenite compounds and are not fixed. Further, it is not sintered in the heat treatment temperature zone, and thus it is considered to be easily excluded.

因此,藉由使用裝置100將被處理體160保持於高溫,而可對被處理體160所含之鈣鋁石化合物之粉末進行燒結,進而,向該鈣鋁石化合物燒結體之籠中導入電子。 Therefore, by using the apparatus 100 to maintain the object to be processed 160 at a high temperature, the powder of the mayenite compound contained in the object to be processed 160 can be sintered, and further, electrons can be introduced into the cage of the mayenite compound sintered body. .

由於一氧化碳氣體與鈦蒸氣共存於環境中,故而抑制於鈣鋁石化合物燒結體之表面上形成較厚之「表面層」。 Since the carbon monoxide gas and the titanium vapor coexist in the environment, a thick "surface layer" is formed on the surface of the mayenite compound sintered body.

再者,本領域人員明確,圖2之裝置構成係一例,亦可使用其他裝置對被處理體進行高溫處理。 Furthermore, it is clear to those skilled in the art that the device configuration of Fig. 2 is an example, and the device to be processed may be subjected to high temperature treatment using another device.

以上,作為本發明之一實施例,對使用包含鈣鋁石化合物之粉末之被處理體來製造導電性鈣鋁石化合物的方法之一例進行說明。 As an example of the present invention, an example of a method for producing a conductive mayenite compound using a target material containing a powder of a mayenite compound will be described.

然而,本發明並不限定於此。例如,亦可使用包含鈣鋁石化合物之燒結體之被處理體來代替包含鈣鋁石化合物之粉末之被處理體。 However, the invention is not limited thereto. For example, a treated body containing a sintered body of a mayenite compound may be used instead of the object to be treated containing a powder of the mayenite compound.

此種鈣鋁石化合物之燒結體例如可藉由使經過上述(鈣鋁石化合物粉末製備步驟)所製造之鈣鋁石化合物燒結、 或者對包含鈣鋁石化合物之粉末之成形體進行熱處理而製備。 The sintered body of the mayenite compound can be sintered, for example, by causing the mayenite compound produced by the above (calcium-alumina compound powder preparation step) to be sintered. Alternatively, a shaped body of a powder containing a mayenite compound is heat-treated to prepare.

於後者之情形時,熱處理條件只要為對成形體進行燒結之條件則無特別限制。熱處理例如亦可於大氣中,於300℃~1450℃之溫度範圍內實施。若為300℃以上則有機成分揮發且粉末之接點增加故而容易進行燒結處理,若為1450℃以下則容易保持燒結體之形狀。熱處理之最高溫度大約為1000℃~1420℃之範圍,較佳為1050℃~1415℃,進而較佳為1100℃~1380℃,尤佳為1250℃~1350℃。 In the latter case, the heat treatment conditions are not particularly limited as long as they are conditions for sintering the formed body. The heat treatment can be carried out, for example, in the atmosphere at a temperature ranging from 300 ° C to 1450 ° C. When it is 300 ° C or more, the organic component volatilizes and the contact of the powder increases, so that the sintering treatment is easy, and if it is 1450 ° C or less, the shape of the sintered body is easily maintained. The maximum temperature of the heat treatment is in the range of about 1000 ° C to 1420 ° C, preferably from 1050 ° C to 1415 ° C, more preferably from 1100 ° C to 1380 ° C, and particularly preferably from 1250 ° C to 1350 ° C.

熱處理之最高溫度中之保持時間大約為1小時~50小時之範圍,較佳為2小時~40小時,進而較佳為3小時~30小時。又,即便延長保持時間,特性上亦無特別問題,但若考慮製作成本,則保持時間較佳為48小時以內。亦可於氬、氦、氖、氮等惰性氣體、氧氣、或該等混合存在之氛圍中、或者真空中實施。 The holding time in the highest temperature of the heat treatment is about 1 hour to 50 hours, preferably 2 hours to 40 hours, and more preferably 3 hours to 30 hours. Further, even if the holding time is extended, there is no particular problem in terms of characteristics. However, in consideration of the production cost, the holding time is preferably within 48 hours. It can also be carried out in an inert gas such as argon, helium, neon, or nitrogen, oxygen, or an atmosphere in which the mixture is present, or in a vacuum.

此外,亦可以各種方法製備鈣鋁石化合物之燒結體。 Further, a sintered body of the mayenite compound can also be produced by various methods.

再者,燒結體所含之鈣鋁石化合物可為導電性鈣鋁石化合物,亦可為非導電性鈣鋁石化合物。又,燒結體所含之鈣鋁石化合物可為包含氟之鈣鋁石化合物,亦可為不含氟之鈣鋁石化合物。 Further, the mayenite compound contained in the sintered body may be a conductive mayenite compound or a non-conductive mayenite compound. Further, the mayenite compound contained in the sintered body may be a mayenite compound containing fluorine or a mayenite compound not containing fluorine.

又,於本發明中,亦可使用包含預燒粉之成形體之被處理體來代替包含鈣鋁石化合物之粉末之被處理體。 Further, in the present invention, a target object including a molded body of a calcined powder may be used instead of the object to be treated containing a powder of the mayenite compound.

於本案中,所謂「預燒粉」意指經過熱處理製備而成之粉末,且指(i)包含選自由氧化鈣、氧化鋁、及鋁酸鈣所組 成之群中之至少2種之混合粉末,或(ii)2種以上之鋁酸鈣之混合粉末。作為鋁酸鈣,可列舉:CaO.Al2O3、3CaO.Al2O3、5CaO.3Al2O3、CaO.2Al2O3、CaO.6Al2O3、C12A7等。「預燒粉」中之鈣(Ca)與鋁(Al)之比率係以換算為CaO:Al2O3之莫耳比計,為9.5:9.5~13:6。 In the present invention, the term "pre-calcined powder" means a powder prepared by heat treatment, and means that (i) comprises a mixed powder of at least two selected from the group consisting of calcium oxide, aluminum oxide, and calcium aluminate. Or (ii) a mixed powder of two or more kinds of calcium aluminate. As calcium aluminate, mention may be made of CaO. Al 2 O 3 , 3CaO. Al 2 O 3 , 5CaO. 3Al 2 O 3 , CaO. 2Al 2 O 3 , CaO. 6Al 2 O 3 , C12A7, and the like. The ratio of calcium (Ca) to aluminum (Al) in "pre-fired powder" is 9.5:9.5 to 13:6 in terms of the molar ratio of CaO:Al 2 O 3 .

尤其是以鈣(Ca)與鋁(Al)之比率以換算為CaO:Al2O3之莫耳比計成為10:9~13:6之範圍的方式進行調合。CaO:Al2O3(莫耳比)較佳為11:8~12.5:6.5之範圍,更佳為11.5:7.5~12.3:6.7之範圍,進而較佳為11.8:7.2~12.2:6.8之範圍,尤佳為約12:7。 In particular, the ratio of calcium (Ca) to aluminum (Al) is adjusted so that the molar ratio of CaO:Al 2 O 3 is in the range of 10:9 to 13:6. CaO:Al 2 O 3 (mole ratio) is preferably in the range of 11:8 to 12.5:6.5, more preferably in the range of 11.5:7.5 to 12.3:6.7, and further preferably in the range of 11.8:7.2 to 12.2:6.8. , especially good is about 12:7.

預燒粉可以如下方式製備。首先,準備原料粉末。原料粉末至少包含成為氧化鈣源及氧化鋁源之原料。 The calcined powder can be prepared in the following manner. First, a raw material powder is prepared. The raw material powder contains at least a raw material which is a source of calcium oxide and a source of alumina.

例如,原料粉末較佳為包含2種以上之鋁酸鈣,或者包含選自由鈣化合物、鋁化合物、及鋁酸鈣所組成之群中之至少2種。 For example, the raw material powder preferably contains two or more kinds of calcium aluminate or at least two selected from the group consisting of a calcium compound, an aluminum compound, and calcium aluminate.

原料粉末例如亦可為以下之原料粉末:包含鈣化合物與鋁化合物之原料粉末;包含鈣化合物與鋁酸鈣之原料粉末;包含鋁化合物與鋁酸鈣之原料粉末;包含鈣化合物、鋁化合物、及鋁酸鈣之原料粉末;僅包含鋁酸鈣之原料粉末。 The raw material powder may be, for example, the following raw material powder: a raw material powder containing a calcium compound and an aluminum compound; a raw material powder containing a calcium compound and calcium aluminate; a raw material powder containing an aluminum compound and calcium aluminate; and a calcium compound, an aluminum compound, And raw material powder of calcium aluminate; only raw material powder containing calcium aluminate.

以下,作為代表例,設想原料粉末至少包含成為氧化鈣源之原料A、及成為氧化鋁源之原料B之情形,說明預燒粉之製備方法。 In the following, as a representative example, a case where the raw material powder contains at least a raw material A which is a source of calcium oxide and a raw material B which becomes an alumina source is described, and a method of preparing the calcined powder will be described.

作為原料A,可列舉:碳酸鈣、氧化鈣、氫氧化鈣、碳 酸氫鈣、硫酸鈣、偏磷酸鈣、草酸鈣、乙酸鈣、硝酸鈣、及鹵化鈣等。於該等之中,較佳為碳酸鈣、氧化鈣、及氫氧化鈣。 As the raw material A, calcium carbonate, calcium oxide, calcium hydroxide, and carbon can be cited. Calcium hydrogen phosphate, calcium sulfate, calcium metaphosphate, calcium oxalate, calcium acetate, calcium nitrate, and calcium halide. Among these, calcium carbonate, calcium oxide, and calcium hydroxide are preferred.

作為原料B,可列舉:氫氧化鋁、氧化鋁、硫酸鋁、硝酸鋁、及鹵化鋁等。於該等之中,較佳為氫氧化鋁及氧化鋁。氧化鋁(氧化鋁)有α-氧化鋁、γ-氧化鋁、δ-氧化鋁等,較佳為α-氧化鋁(氧化鋁)。 Examples of the raw material B include aluminum hydroxide, aluminum oxide, aluminum sulfate, aluminum nitrate, and aluminum halide. Among these, aluminum hydroxide and aluminum oxide are preferred. The alumina (alumina) has α-alumina, γ-alumina, δ-alumina or the like, and is preferably α-alumina (alumina).

預燒粉亦可包含除原料A及原料B以外之物質。預燒粉可包含氟成分,亦可不包含氟成分。 The calcined powder may also contain substances other than the raw material A and the raw material B. The calcined powder may or may not contain a fluorine component.

繼而,對包含原料A及原料B之原料粉末進行熱處理。藉此,可獲得包含鈣與鋁之預燒粉。如上所述,預燒粉中之鈣(Ca)與鋁(Al)之比率係以換算為CaO:Al2O3之莫耳比計,為約10:9~13:6之範圍。 Then, the raw material powder containing the raw material A and the raw material B is subjected to heat treatment. Thereby, a calcined powder containing calcium and aluminum can be obtained. As described above, the ratio of calcium (Ca) to aluminum (Al) in the calcined powder is in the range of about 10:9 to 13:6 in terms of the molar ratio of CaO:Al 2 O 3 .

熱處理之最高溫度大約為600℃~1250℃之範圍,較佳為900℃~1200℃,更佳為1000℃~1100℃。熱處理之最高溫度中之保持時間大約為1小時~50小時之範圍,較佳為2小時~40小時,更佳為3小時~30小時。又,即便延長保持時間,特性上亦無特別問題,但若考慮製作成本,則保持時間較佳為48小時以內。 The maximum temperature of the heat treatment is in the range of about 600 ° C to 1,250 ° C, preferably from 900 ° C to 1,200 ° C, more preferably from 1000 ° C to 1,100 ° C. The holding time in the highest temperature of the heat treatment is about 1 hour to 50 hours, preferably 2 hours to 40 hours, more preferably 3 hours to 30 hours. Further, even if the holding time is extended, there is no particular problem in terms of characteristics. However, in consideration of the production cost, the holding time is preferably within 48 hours.

熱處理亦可於大氣中實施。熱處理亦可於氬、氦、氖、氮等惰性氣體、氧氣、或該等混合存在之氛圍中、或者真空中實施。 The heat treatment can also be carried out in the atmosphere. The heat treatment may also be carried out in an inert gas such as argon, helium, neon, or nitrogen, oxygen, or an atmosphere in which they are mixed, or in a vacuum.

通常,熱處理後所獲得之預燒粉之一部分或全部為燒結之塊狀。因此,視需要亦可實施如上述(鈣鋁石化合物之 粉末之製備)之欄中所示之粉碎處理(粗粉碎及/或微細化)。藉由以上步驟,製備預燒粉。 Usually, part or all of the calcined powder obtained after the heat treatment is a sintered block. Therefore, as described above, it is also possible to carry out the above (calciumsite compound) The pulverization treatment (crude pulverization and/or miniaturization) shown in the column of the preparation of the powder. By the above steps, a calcined powder is prepared.

繼而,使用如上所述製備而成之預燒粉,形成成形體。成形體之形成方法可應用與上述包含鈣鋁石化合物之粉末之成形體的形成方法相同之方法,故而於此處結束不作說明。 Then, the calcined powder prepared as described above was used to form a molded body. The method of forming the molded body can be applied to the same method as the method of forming the molded body of the above-described powder containing the mayenite compound, and therefore, the description thereof will be omitted.

實施例Example

繼而,對本發明之實施例進行說明。 Next, an embodiment of the present invention will be described.

(實施例1) (Example 1)

以如下方法製作高導電性鈣鋁石化合物。 A highly conductive mayenite compound was produced in the following manner.

(鈣鋁石化合物之合成) (Synthesis of mayenite compound)

以用氧化鈣(CaO):氧化鋁(Al2O3)之莫耳比換算計成為12:7之方式,混合碳酸鈣(CaCO3,關東化學公司製造,特級)粉末313.5 g、與氧化鋁(α-Al2O3,關東化學公司製造,特級)粉末186.5 g。繼而,將該混合粉末於大氣中以300℃/小時之升溫速度加熱直至1350℃,並保持於1350℃下6小時。其後,將其以300℃/小時之冷卻速度進行降溫,獲得約362 g之白色塊體。 Mixed calcium carbonate (CaCO 3 , manufactured by Kanto Chemical Co., Ltd.) powder 313.5 g, with alumina, in a molar ratio of 12:7 in terms of molar ratio of calcium oxide (CaO):alumina (Al 2 O 3 ) (α-Al 2 O 3 , manufactured by Kanto Chemical Co., Ltd., special grade) powder 186.5 g. Then, the mixed powder was heated to 1,350 ° C at a temperature elevation rate of 300 ° C / hour in the atmosphere, and kept at 1350 ° C for 6 hours. Thereafter, it was cooled at a cooling rate of 300 ° C / hour to obtain a white block of about 362 g.

繼而,藉由氧化鋁製搗碎機將該白色塊體以大小成為約5 mm之破片之方式粉碎之後,進而,利用氧化鋁製自動研缽進行粗粉碎,獲得白色粒子(以下,稱為粒子「A1」)。藉由雷射繞射散射法(SALD-2100,島津製作所公司製造)測定所獲得之粒子A1之粒度,結果平均粒徑為20 μm。 Then, the white block was pulverized so as to have a size of about 5 mm by an alumina masher, and then coarsely pulverized by an automatic mortar made of alumina to obtain white particles (hereinafter referred to as particles). "A1"). The particle size of the obtained particle A1 was measured by a laser diffraction scattering method (SALD-2100, manufactured by Shimadzu Corporation), and as a result, the average particle diameter was 20 μm.

繼而,將350 g粒子A1、直徑5 mm之氧化鋯球3 kg、及 作為粉碎溶劑之工業用EL級之異丙醇350 ml投入2升之氧化鋯製容器中,於使氧化鋯製之蓋裝載於容器上之後,以旋轉速度94 rpm實施16小時之球磨機粉碎處理。 Then, 350 g of particles A1, 5 mm diameter zirconia balls 3 kg, and 350 ml of an industrial EL grade isopropyl alcohol as a pulverization solvent was placed in a 2-liter zirconia container, and after the zirconia cap was placed on the container, the ball mill pulverization treatment was carried out for 16 hours at a rotation speed of 94 rpm.

處理後,使用所獲得之漿料進行抽吸過濾,去除粉碎溶劑。又,將殘留之物質投入80℃之烘箱中,乾燥10小時。藉此,獲得白色粉末(以下,稱為粉末「B1」)。X射線繞射分析之結果為,確認所獲得之粉末B1為C12A7結構。又,可知藉由上述雷射繞射散射法所獲得之粉末B1之平均粒徑為3.3 μm。 After the treatment, the obtained slurry was subjected to suction filtration to remove the pulverization solvent. Further, the remaining material was placed in an oven at 80 ° C and dried for 10 hours. Thereby, a white powder (hereinafter referred to as powder "B1") was obtained. As a result of X-ray diffraction analysis, it was confirmed that the obtained powder B1 was a C12A7 structure. Further, it was found that the average particle diameter of the powder B1 obtained by the above-described laser diffraction scattering method was 3.3 μm.

(鈣鋁石化合物之成形體之製作) (Production of a body of a mayenite compound)

調配79.8 g以上述方法所獲得之鈣鋁石化合物之粉末B1、作為成形用黏合劑之聚環氧乙烷13.0 g、作為塑化劑之鄰苯二甲酸二丁酯0.2 g、及作為潤滑劑之硬脂酸7.0 g,加熱至150℃進行混練。將所獲得之混練物注入射出成形用之成形模中,冷卻直至室溫。藉此,獲得直徑3.4 mm、長度15 mm之桿型之成形體C1。 79.8 g of the powder B1 of the mayenite compound obtained by the above method, 13.0 g of polyethylene oxide as a binder for forming, 0.2 g of dibutyl phthalate as a plasticizer, and as a lubricant Stearic acid 7.0 g, heated to 150 ° C for mixing. The obtained kneaded material was poured into a molding die for injection molding, and cooled to room temperature. Thereby obtaining a diameter of 3.4 mm A molded body C1 of a rod shape of 15 mm in length.

繼而,進行成形體C1之脫黏合劑處理。 Then, the debonding agent treatment of the molded body C1 is performed.

將成形體C1以置於氧化鋁板上之狀態設置於電爐內,於大氣中以40分鐘加熱直至200℃。進而以8小時加熱直至600℃之後,以2小時冷卻直至室溫。經脫脂之成形體為白色且維持桿形狀。 The formed body C1 was placed in an electric furnace in the state of being placed on an alumina plate, and heated in the air for 40 minutes up to 200 °C. Further, after heating to 8 ° C for 8 hours, it was cooled to room temperature over 2 hours. The degreased molded body is white and maintains a rod shape.

(高導電性鈣鋁石化合物之製作) (Production of highly conductive mayenite compound)

繼而,使用圖3所示之裝置以高溫對脫脂後之成形體C1進行煅燒處理,製作導電性鈣鋁石化合物。 Then, the degreased molded body C1 was subjected to a calcination treatment at a high temperature using the apparatus shown in Fig. 3 to prepare a conductive mayenite compound.

圖3係表示脫脂後之成形體C1之煅燒處理所使用之裝置。 Fig. 3 is a view showing the apparatus used for the calcination treatment of the molded body C1 after degreasing.

如圖3所示,該裝置300具備:氧化鋁容器310、附碳製之蓋335之碳容器330。又,於氧化鋁容器310之底部配置有鋪滿0.8 g之金屬鈦粉末而構成之鈦層320。鈦層320係於裝置300成為高溫時,成為產生鈦蒸氣之鈦蒸氣源。 As shown in FIG. 3, the apparatus 300 includes an alumina container 310 and a carbon container 330 with a cover 335 made of carbon. Further, a titanium layer 320 composed of 0.8 g of titanium metal powder was placed on the bottom of the alumina container 310. The titanium layer 320 is a titanium vapor source that generates titanium vapor when the device 300 is at a high temperature.

氧化鋁容器310具有外徑20 mm×內徑18 mm×高度10 mm之大致圓筒狀之形狀,以鈦蒸氣擴散至碳容器330整體之方式,實施粗削邊緣之處理。又,碳容器330具有外徑50 mm×內徑40 mm×高度60 mm之大致圓筒狀之形狀。 The alumina container 310 has a substantially cylindrical shape having an outer diameter of 20 mm, an inner diameter of 18 mm, and a height of 10 mm, and the rough edge is treated so that the titanium vapor is diffused to the entire carbon container 330. Further, the carbon container 330 has a substantially cylindrical shape having an outer diameter of 50 mm, an inner diameter of 40 mm, and a height of 60 mm.

該裝置300係以如下方式使用。 This device 300 is used in the following manner.

首先,於具有鈦層320之氧化鋁容器310之上部配置氧化鋁板315。繼而,於氧化鋁板315上配置複數個上述脫脂後之成形體C1。於該狀態下,成形體C1並未與鈦層320直接接觸。 First, an alumina plate 315 is disposed on the upper portion of the alumina container 310 having the titanium layer 320. Then, a plurality of the above-mentioned degreased molded bodies C1 are placed on the alumina plate 315. In this state, the formed body C1 is not in direct contact with the titanium layer 320.

進而,將該等整體配置於碳容器330內,於碳容器330之上部配置碳製之蓋335。 Further, the whole is placed in the carbon container 330, and a carbon cover 335 is placed on the upper portion of the carbon container 330.

繼而,將該裝置300設置於氛圍可調之電爐內。又,使用旋轉泵及擴散泵將爐內抽成真空。其後,於爐內之壓力成為0.1 Pa以下之後,開始裝置300之加熱,以2小時升溫直至1300℃。將裝置300於該狀態下保持6小時之後,以2小時冷卻直至室溫。 The device 300 is then placed in an electric furnace of adjustable atmosphere. Further, the inside of the furnace was evacuated using a rotary pump and a diffusion pump. Thereafter, after the pressure in the furnace became 0.1 Pa or less, the heating of the apparatus 300 was started, and the temperature was raised to 1300 ° C in 2 hours. After the apparatus 300 was kept in this state for 6 hours, it was cooled to room temperature in 2 hours.

藉由該熱處理,成形體C1進行燒結而可獲得表面為黑色之燒結體(以下,稱為燒結體「D1」)。該燒結體D1之相對 密度為96.6%。 By this heat treatment, the molded body C1 is sintered to obtain a sintered body having a black surface (hereinafter referred to as a sintered body "D1"). The relative of the sintered body D1 The density is 96.6%.

為了提取電子密度測定用樣品,而利用氧化鋁製自動研缽實施燒結體D1之粗粉碎。粗粉碎係使用氧化鋁研缽及氧化鋁製自動研缽而實施。 In order to extract a sample for electron density measurement, coarse pulverization of the sintered body D1 was carried out by an automatic mortar made of alumina. The coarse pulverization was carried out using an alumina mortar and an automatic mortar made of alumina.

所獲得之粉末呈較濃之深棕色。X射線繞射分析之結果可知,該粉末僅具有C12A7結構。又,根據所獲得之粉末之光擴散反射光譜之波峰位置求出之電子密度為1.6×1021 cm-3,導電率為16 S/cm。由此確認,燒結體D1係高導電性鈣鋁石化合物。 The powder obtained was darker brown. As a result of X-ray diffraction analysis, it was found that the powder had only a C12A7 structure. Further, the electron density determined from the peak position of the light-diffusing reflectance spectrum of the obtained powder was 1.6 × 10 21 cm -3 , and the electric conductivity was 16 S / cm. From this, it was confirmed that the sintered body D1 is a highly conductive mayenite compound.

又,使用SEM(Scanning Electron Microscope,掃描型電子顯微鏡),觀察燒結體D1之剖面。根據剖面觀察之結果確認,燒結體D1係空孔較少而緻密之狀態。又,確認表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, a cross section of the sintered body D1 was observed using an SEM (Scanning Electron Microscope). From the results of the cross-sectional observation, it was confirmed that the sintered body D1 was in a state of being small and dense. Further, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, so that the surface layer was extremely thin.

(實施例2) (Example 2)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例2係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1320℃。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, in Example 2, in the above step (manufacture of a highly conductive mayenite compound), the heat treatment temperature was set to 1,320 °C. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D2」)。燒結體D2之相對密度為96.6%。 Thus, after the above step (manufacturing of the highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D2") can be obtained. The relative density of the sintered body D2 was 96.6%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D2而獲得之粉末之X射線繞射之結果可知,燒結體D2僅具有C12A7結構。燒結體D2之電子密度為1.6×1021 cm-3,導電 率為16 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D2 by the same method as in Example 1, the sintered body D2 had only a C12A7 structure. The sintered body D2 had an electron density of 1.6 × 10 21 cm -3 and a conductivity of 16 S / cm.

根據上述情況確認,燒結體D2係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D2 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D2之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D2 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例3) (Example 3)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例3係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1280℃。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 3 is in the above step (manufacturing of a highly conductive mayenite compound), and the heat treatment temperature is set to 1280 °C. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D3」)。燒結體D3之相對密度為98.5%。 Thereby, after the above-described step of producing the highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D3") can be obtained. The relative density of the sintered body D3 was 98.5%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D3而獲得之粉末之X射線繞射之結果可知,燒結體D3僅具有C12A7結構。燒結體D3之電子密度為1.7×1021 cm-3,導電率為17 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D3 by the same method as in Example 1, the sintered body D3 had only a C12A7 structure. The sintered body D3 had an electron density of 1.7 × 10 21 cm -3 and a conductivity of 17 S / cm.

根據上述情況確認,燒結體D3係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D3 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D3之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D3 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例4) (Example 4)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例4係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理時間設為12小時。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 4 is in the step of the above (production of a highly conductive mayenite compound), and the heat treatment time is set to 12 hours. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D4」)。燒結體D4之相對密度為97.5%。 Thereby, after the above-described step (production of a highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D4") can be obtained. The relative density of the sintered body D4 was 97.5%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D4而獲得之粉末之X射線繞射之結果可知,燒結體D4僅具有C12A7結構。燒結體D4之電子密度為1.7×1021 cm-3,導電率為17 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D4 by the same method as in Example 1, the sintered body D4 had only a C12A7 structure. The sintered body D4 had an electron density of 1.7 × 10 21 cm -3 and a conductivity of 17 S / cm.

根據上述情況確認,燒結體D4係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D4 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D4之表面層之厚度之結果確認,表面層之厚度為約5 μm~約15 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D4 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 15 μm, and the surface layer was extremely thin.

(實施例5) (Example 5)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例5係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理時間設為48小時。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 5 is in the above-mentioned step (production of a highly conductive mayenite compound), and the heat treatment time was set to 48 hours. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D5」)。燒結體D5之相對密度為96.0%。 Thereby, after the step of the above (manufacturing of the highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D5") can be obtained. The relative density of the sintered body D5 was 96.0%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D5而獲得之粉末之X射線繞射之結果可知,燒結體D5僅具有C12A7結構。燒結體D5之電子密度為1.4×1021 cm-3,導電率為14 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D5 by the same method as in Example 1, the sintered body D5 had only a C12A7 structure. The sintered body D5 had an electron density of 1.4 × 10 21 cm -3 and a conductivity of 14 S / cm.

根據上述情況確認,燒結體D5係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D5 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D5之表面層之厚度之結果確認,表面層之厚度為約5 μm~約15 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D5 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 15 μm, and the surface layer was extremely thin.

(實施例6) (Example 6)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例6係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理時間設為96小時。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 6 was carried out in the above-mentioned step (manufacturing of a highly conductive mayenite compound), and the heat treatment time was set to 96 hours. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D6」)。燒結體D6之相對密度為96.7%。 Thereby, after the above-described step (production of a highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D6") can be obtained. The relative density of the sintered body D6 was 96.7%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D6而獲得之粉末之X射線繞射之結果可知,燒結體D6僅具有C12A7結構。燒結體D6之電子密度為1.5×1021 cm-3,導電率為15 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D6 by the same method as in Example 1, the sintered body D6 had only a C12A7 structure. The sintered body D6 had an electron density of 1.5 × 10 21 cm -3 and a conductivity of 15 S / cm.

根據上述情況確認,燒結體D6係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D6 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D6之表面 層之厚度之結果確認,表面層之厚度為約5 μm~約20 μm左右,從而表面層極薄。 Further, the surface of the sintered body D6 was evaluated by the same method as in Example 1. As a result of the thickness of the layer, it was confirmed that the thickness of the surface layer was about 5 μm to about 20 μm, so that the surface layer was extremely thin.

再者,若比較實施例5與實施例6之結果,則可知於兩者中,相對密度及電子密度幾乎無變化。由此可認為,即便使煅燒處理之時間長於48小時,亦不易進一步提高電子密度。因此,就抑制表面層之成長之觀點而言,可認為保持時間較佳為約50小時以內。 Further, when the results of Comparative Example 5 and Example 6 were compared, it was found that the relative density and the electron density hardly changed. From this, it is considered that even if the calcination treatment time is longer than 48 hours, it is difficult to further increase the electron density. Therefore, from the viewpoint of suppressing the growth of the surface layer, it is considered that the holding time is preferably within about 50 hours.

(實施例7) (Example 7)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例7係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理時間設為0.5小時。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 7 is in the step of the above (production of a highly conductive mayenite compound), and the heat treatment time is set to 0.5 hour. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D7」)。燒結體D7之相對密度為95.2%。 Thereby, after the above-described step of producing a highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D7") can be obtained. The relative density of the sintered body D7 was 95.2%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D7而獲得之粉末之X射線繞射之結果可知,燒結體D7僅具有C12A7結構。燒結體D7之電子密度為1.0×1021 cm-3,導電率為10 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D7 by the same method as in Example 1, the sintered body D7 had only a C12A7 structure. The sintered body D7 had an electron density of 1.0 × 10 21 cm -3 and a conductivity of 10 S / cm.

根據上述情況確認,燒結體D7係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D7 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D7之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D7 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例8) (Example 8)

藉由與上述實施例1相同之方法,製作高導電性鈣鋁石化合物。然而,於該實施例8中,作為上述(高導電性鈣鋁石化合物之製作)之步驟中之金屬鈦層320,使用在與實施例1相同條件下使用一次者。其他條件與實施例1之情形相同。 A highly conductive mayenite compound was produced by the same method as in the above Example 1. However, in the eighth embodiment, the titanium metal layer 320 in the above step (the production of the high-conductivity mayenite compound) was used once under the same conditions as those in the first embodiment. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D8」)。燒結體D8之相對密度為97.2%。 Thereby, after the above (manufacture of the highly conductive mayenite compound) step, a sintered body having a black surface (hereinafter referred to as a sintered body "D8") can be obtained. The relative density of the sintered body D8 was 97.2%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D8而獲得之粉末之X射線繞射之結果可知,燒結體D8僅具有C12A7結構。燒結體D8之電子密度為1.5×1021 cm-3,導電率為16 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D8 by the same method as in Example 1, the sintered body D8 had only a C12A7 structure. The sintered body D8 had an electron density of 1.5 × 10 21 cm -3 and a conductivity of 16 S / cm.

根據上述情況確認,燒結體D8係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D8 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D8之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D8 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

由該結果可知,金屬鈦層320能夠再利用。順便,根據其後之實驗確認,於裝置300中,即便重複5次使用金屬鈦層320,亦可獲得大致同等之高導電性鈣鋁石化合物。 From this result, it is understood that the titanium metal layer 320 can be reused. Incidentally, it was confirmed from the subsequent experiments that in the apparatus 300, even if the titanium metal layer 320 was used five times, a substantially equivalent high-performing mayenite compound was obtained.

(實施例9) (Example 9)

藉由與上述實施例1相同之方法,製作高導電性鈣鋁石化合物。然而,該實施例9係於上述(鈣鋁石化合物之成形 體之製作)之步驟中,對使用之粉末並未使用鈣鋁石化合物,而是使用電子密度為5.0×1019 cm-3之導電性鈣鋁石化合物之粉末。其他條件與實施例1之情形相同。 A highly conductive mayenite compound was produced by the same method as in the above Example 1. However, in the step of the above (the production of the formed body of the mayenite compound), the use of the powder does not use the mayenite compound, but the electron density is 5.0 × 10 19 cm -3 . A powder of a conductive mayenite compound. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D9」)。燒結體D9之相對密度為96.5%。 Thereby, after the above-described (production of a highly conductive mayenite compound) step, a sintered body having a black surface (hereinafter referred to as a sintered body "D9") can be obtained. The relative density of the sintered body D9 was 96.5%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D9而獲得之粉末之X射線繞射之結果可知,燒結體D9僅具有C12A7結構。燒結體D9之電子密度為1.6×1021 cm-3,導電率為17 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D9 by the same method as in Example 1, the sintered body D9 had only a C12A7 structure. The sintered body D9 had an electron density of 1.6 × 10 21 cm -3 and a conductivity of 17 S / cm.

根據上述情況確認,燒結體D9係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D9 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D9之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D9 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例10) (Embodiment 10)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例10係於上述(高導電性鈣鋁石化合物之製作)之步驟中,於真空處理時未使用擴散泵。因此,於該實施例10中,爐內之壓力為約50 Pa左右。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 10 is in the above step (manufacture of a highly conductive mayenite compound), and a diffusion pump is not used in the vacuum treatment. Therefore, in this embodiment 10, the pressure in the furnace is about 50 Pa. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D10」)。燒結體D10之相對密度為96.3%。 Thereby, after the step of the above (manufacturing of the highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D10") can be obtained. The relative density of the sintered body D10 was 96.3%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D10而獲得之粉末之X射線繞射之結果可知,燒結體D10僅具有C12A7結構。燒結體D10之電子密度為1.1×1021 cm-3,導電率為11 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D10 by the same method as in Example 1, the sintered body D10 has only a C12A7 structure. The sintered body D10 had an electron density of 1.1 × 10 21 cm -3 and a conductivity of 11 S / cm.

根據上述情況確認,燒結體D10係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D10 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D10之表面層之厚度之結果確認,表面層之厚度為約20 μm~約40 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D10 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 20 μm to about 40 μm, and the surface layer was extremely thin.

(實施例11) (Example 11)

藉由與上述實施例1相同之方法,製作高導電性鈣鋁石化合物。然而,該實施例11係於上述(高導電性鈣鋁石化合物之製作)之步驟中,未製作鈣鋁石化合物之成形體C1,而是以鈣鋁石化合物之粉末之狀態進行煅燒處理。其他條件與實施例1之情形相同。 A highly conductive mayenite compound was produced by the same method as in the above Example 1. However, in the above-described step (the production of the high-conductivity mayenite compound), the molded article C1 of the mayenite compound was not produced, but the calcination treatment was carried out in the state of the powder of the mayenite compound. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色且一部分經燒結之塊(以下,稱為燒結體「D11」)。 Thereby, after the step of the above (manufacturing of the highly conductive mayenite compound), a part of the surface which is black and partially sintered (hereinafter referred to as sintered body "D11") can be obtained.

進而,藉由與實施例1相同之方法,粉碎該燒結體D11而獲得之粉末之X射線繞射之結果可知,燒結體D11僅具有C12A7結構。燒結體D11之電子密度為1.5×1021 cm-3Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D11 by the same method as in Example 1, the sintered body D11 has only a C12A7 structure. The electron density of the sintered body D11 was 1.5 × 10 21 cm -3 .

根據上述情況確認,燒結體D11係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D11 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D11之表面 層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, the surface of the sintered body D11 was evaluated by the same method as in Example 1. As a result of the thickness of the layer, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, so that the surface layer was extremely thin.

(實施例12) (Embodiment 12)

藉由與上述實施例1相同之方法,製作高導電性鈣鋁石化合物。然而,該實施例12係於上述(鈣鋁石化合物之成形體之製作)之步驟中,製作向成形體C1中插入鎳線者代替成形體C1,並將其設為被處理體。 A highly conductive mayenite compound was produced by the same method as in the above Example 1. However, in the above-described step (in the production of the formed body of the mayenite compound), the nickel wire is inserted into the molded body C1 instead of the molded body C1, and this is used as the object to be processed.

被處理體係以如下方式製作。 The treated system was produced as follows.

首先,使用流達(Leutor),於成形體C1之一底面之中心形成直徑約0.7 mm、深度約2.5 mm之孔。繼而,向該孔內插入加熱至150℃之線徑0.7 mm、長度10 mm之鎳線。由於鎳線經加熱,故而與成形體C7之接觸部分之樹脂會軟化,可容易插入鎳線。 First, a hole having a diameter of about 0.7 mm and a depth of about 2.5 mm is formed at the center of one of the bottom faces of the formed body C1 using a Leutor. Then, a nickel wire having a wire diameter of 0.7 mm and a length of 10 mm heated to 150 ° C was inserted into the hole. Since the nickel wire is heated, the resin in contact with the molded body C7 is softened, and the nickel wire can be easily inserted.

以上述方式製作附鎳線之成形體。其他條件與實施例1之情形相同。 A molded body to which a nickel wire is attached is produced in the above manner. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得與鎳線結合之黑色之燒結體(以下,稱為燒結體「D12」)。燒結體D12之除鎳線以外之部分之相對密度為96.7%。 Thereby, after the step of the above (manufacturing of the highly conductive mayenite compound), a black sintered body (hereinafter referred to as a sintered body "D12") bonded to a nickel wire can be obtained. The relative density of the portion other than the nickel wire of the sintered body D12 was 96.7%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D12而獲得之粉末之X射線繞射之結果可知,燒結體D12僅具有C12A7結構。燒結體D12之電子密度為1.6×1021 cm-3,導電率為16 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D12 by the same method as in Example 1, the sintered body D12 has only a C12A7 structure. The sintered body D12 had an electron density of 1.6 × 10 21 cm -3 and a conductivity of 16 S / cm.

根據上述情況確認,燒結體D12係高導電性鈣鋁石化合 物。 According to the above situation, it is confirmed that the sintered body D12 is a highly conductive calcium-aluminum petrochemical compound. Things.

又,藉由與實施例1相同之方法,評價燒結體D12之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D12 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

再者,可知鎳線即便彎曲10次左右亦不會彎折,而不會產生脆化等劣化。 Further, it is understood that the nickel wire is not bent even if it is bent about 10 times, and does not cause deterioration such as embrittlement.

(實施例13) (Example 13)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例13係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1360℃。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 13 is in the above step (manufacturing of a highly conductive mayenite compound), and the heat treatment temperature is set to 1360 °C. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D13」)。燒結體D13之相對密度為97.8%。 Thereby, after the above-described step of producing the highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D13") can be obtained. The relative density of the sintered body D13 was 97.8%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D13而獲得之粉末之X射線繞射之結果可知,燒結體D13僅具有C12A7結構。燒結體D13之電子密度為1.5×1021 cm-3,導電率為15 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D13 by the same method as in Example 1, the sintered body D13 has only a C12A7 structure. The sintered body D13 had an electron density of 1.5 × 10 21 cm -3 and a conductivity of 15 S / cm.

根據上述情況確認,燒結體D13係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D13 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D13之表面層之厚度之結果確認,表面層之厚度為約5 μm~約20 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D13 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 20 μm, and the surface layer was extremely thin.

(實施例14) (Example 14)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例14係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1250℃。其他條件與實施例1情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Example 14 is in the above step (manufacturing of a highly conductive mayenite compound), and the heat treatment temperature is set to 1,250 °C. Other conditions are the same as in the case of Embodiment 1.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D14」)。燒結體D14之相對密度為96.0%。 Thus, after the above step (manufacturing of the highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body "D14") can be obtained. The relative density of the sintered body D14 was 96.0%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D14而獲得之粉末之X射線繞射之結果可知,燒結體D14僅具有C12A7結構。燒結體D14之電子密度為1.0×1021 cm-3,導電率為10 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D14 by the same method as in Example 1, the sintered body D14 has only a C12A7 structure. The sintered body D14 had an electron density of 1.0 × 10 21 cm -3 and a conductivity of 10 S / cm.

根據上述情況確認,燒結體D14係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D14 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D14之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D14 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例15) (Example 15)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例15係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將自室溫起加熱直至1300℃時之時間設為4小時,將自1300℃起冷卻直至室溫之時間設為4小時。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, in the above-mentioned step (the production of the high-conductivity mayenite compound), the time from the heating at room temperature to 1300 ° C was set to 4 hours, and the temperature was cooled from 1300 ° C to room temperature. The time is set to 4 hours. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體 「D15」)。燒結體D15之相對密度為97.0%。 Thereby, after the above step (manufacturing of a highly conductive mayenite compound), a sintered body having a black surface (hereinafter referred to as a sintered body) can be obtained. "D15"). The relative density of the sintered body D15 was 97.0%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D15而獲得之粉末之X射線繞射之結果可知,燒結體D15僅具有C12A7結構。燒結體D15之電子密度為1.5×1021 cm-3,導電率為15 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D15 by the same method as in Example 1, the sintered body D15 had only a C12A7 structure. The sintered body D15 had an electron density of 1.5 × 10 21 cm -3 and a conductivity of 15 S / cm.

根據上述情況確認,燒結體D15係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D15 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D15之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D15 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(比較例1) (Comparative Example 1)

藉由與上述實施例1相同之方法,嘗試高導電性鈣鋁石化合物之製作。然而,該比較例1係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1200℃。其他條件與實施例1之情形相同。 The production of the highly conductive mayenite compound was attempted by the same method as in the above Example 1. However, this Comparative Example 1 was carried out in the above step (manufacturing of a highly conductive mayenite compound), and the heat treatment temperature was set to 1200 °C. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D51」)。 Thereby, after the above-described step of producing a highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D51") can be obtained.

進而,藉由與實施例1相同之方法,粉碎該燒結體D51而獲得之粉末之X射線繞射之結果可知,燒結體D51係除C12A7結構以外,具有多樣化之異相。燒結體D51具有異相,故而無法求出電子密度及導電率。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D51 by the same method as in Example 1, it is understood that the sintered body D51 has a heterogeneous phase other than the C12A7 structure. Since the sintered body D51 has a different phase, the electron density and the electrical conductivity cannot be obtained.

(比較例2) (Comparative Example 2)

藉由與上述實施例1相同之方法,嘗試高導電性鈣鋁石 化合物之製作。然而,該比較例2係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將熱處理溫度設為1400℃。其他條件與實施例1之情形相同。 High conductivity manganite was tried by the same method as in the above Example 1. Production of compounds. However, in Comparative Example 2, in the above step (manufacturing of a highly conductive mayenite compound), the heat treatment temperature was set to 1400 °C. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D52」)。燒結體D52變形激烈而不會維持原來之形狀。因此,無法測定相對密度。 By this, after the above-described step of producing the highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D52") can be obtained. The sintered body D52 is highly deformed and does not maintain its original shape. Therefore, the relative density cannot be measured.

進而,藉由與實施例1相同之方法,粉碎該燒結體D52而獲得之粉末之X射線繞射之結果可知,燒結體D52係除C12A7結構以外,具有異相。燒結體D52具有異相,故而準確之電子密度及導電率不明確,但估計燒結體D52之電子密度為大約7.7×1019 cm-3Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D52 by the same method as in Example 1, it is understood that the sintered body D52 has a hetero phase in addition to the C12A7 structure. Since the sintered body D52 has a different phase, the exact electron density and conductivity are not clear, but it is estimated that the electron density of the sintered body D52 is about 7.7 × 10 19 cm -3 .

根據上述情況確認,燒結體D52不具有較高之電子密度。 From the above, it was confirmed that the sintered body D52 did not have a high electron density.

(比較例3) (Comparative Example 3)

藉由與上述實施例10相同之方法,嘗試高導電性鈣鋁石化合物之製作。然而,該比較例3係於上述(高導電性鈣鋁石化合物之製作)之步驟中所使用之裝置300中,僅使用氧化鋁容器310及氧化鋁板315而未使用附蓋335之碳容器330。其他條件與實施例10之情形相同。 The production of the highly conductive mayenite compound was attempted by the same method as in the above Example 10. However, in Comparative Example 3, in the apparatus 300 used in the above-described step of producing a highly conductive mayenite compound, only the alumina container 310 and the alumina plate 315 were used without using the carbon container 330 with the lid 335. . Other conditions are the same as those in the embodiment 10.

藉此,於上述(高導電性鈣鋁石化合物之製作)步驟後,可獲得表面為白色之燒結體(以下,稱為燒結體「D53」)。燒結體D53之相對密度為92.0%。 Thereby, after the above-mentioned (production of a highly conductive mayenite compound) step, a sintered body having a white surface (hereinafter referred to as a sintered body "D53") can be obtained. The relative density of the sintered body D53 was 92.0%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D53而 獲得之粉末之X射線繞射之結果可知,燒結體D53僅具有C12A7結構。燒結體D53之電子密度為測定極限以下,根據上述情況確認,燒結體D53並非高導電性鈣鋁石化合物。 Further, the sintered body D53 was pulverized by the same method as in the first embodiment. As a result of the X-ray diffraction of the obtained powder, it was found that the sintered body D53 had only the C12A7 structure. The electron density of the sintered body D53 was not more than the measurement limit. From the above, it was confirmed that the sintered body D53 was not a highly conductive mayenite compound.

(比較例4) (Comparative Example 4)

藉由與上述實施例1相同之方法,嘗試高導電性鈣鋁石化合物之製作。然而,該比較例4係於上述(高導電性鈣鋁石化合物之製作)之步驟中所使用之裝置300中,未使用金屬鈦層320。即,該比較例5係於未存在鈦蒸氣之環境下進行成形體C1之煅燒處理。其他條件與實施例1之情形相同。 The production of the highly conductive mayenite compound was attempted by the same method as in the above Example 1. However, in Comparative Example 4, in the apparatus 300 used in the above-described step of producing a highly conductive mayenite compound, the titanium metal layer 320 was not used. That is, in Comparative Example 5, the calcination treatment of the molded body C1 was carried out in an environment where titanium vapor was not present. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D54」)。燒結體D54之相對密度為99.7%。 Thereby, after the above (manufacture of the highly conductive mayenite compound) step, a sintered body having a black surface (hereinafter referred to as a sintered body "D54") can be obtained. The relative density of the sintered body D54 was 99.7%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D54而獲得之粉末之X射線繞射之結果可知,燒結體D54僅具有C12A7結構。然而,根據所獲得之粉末之光擴散反射光譜利用Kubelka-Munk轉換所求出之電子密度為4.0×1019 cm-3,導電率為0.04 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D54 by the same method as in Example 1, the sintered body D54 had only a C12A7 structure. However, the electron density determined by Kubelka-Munk conversion was 4.0 × 10 19 cm -3 and the electric conductivity was 0.04 S/cm according to the light diffusion reflection spectrum of the obtained powder.

根據上述情況確認,燒結體D54不具有較高之電子密度。 From the above, it was confirmed that the sintered body D54 did not have a high electron density.

(比較例5) (Comparative Example 5)

藉由與上述實施例1相同之方法,嘗試高導電性鈣鋁石化合物之製作。然而,該比較例5係於上述(高導電性鈣鋁 石化合物之製作)之步驟中所使用之裝置300中,未使用氧化鋁板315而是將鈣鋁石化合物之成形體C1直接設置於金屬鈦層320之上。其他條件與實施例1之情形相同。 The production of the highly conductive mayenite compound was attempted by the same method as in the above Example 1. However, this Comparative Example 5 is based on the above (highly conductive calcium aluminum) In the apparatus 300 used in the step of producing the stone compound, the formed body C1 of the mayenite compound is directly placed on the titanium metal layer 320 without using the alumina plate 315. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)步驟後,可獲得燒結體(以下,稱為燒結體「D55」)。燒結體D55與金屬鈦層320接觸之表面成為白色。去除白色物質之燒結體D55之相對密度為94.4%。 Thereby, after the above (manufacture of the highly conductive mayenite compound) step, a sintered body (hereinafter referred to as a sintered body "D55") can be obtained. The surface of the sintered body D55 in contact with the metallic titanium layer 320 becomes white. The relative density of the sintered body D55 from which the white substance was removed was 94.4%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D55而獲得之粉末之X射線繞射之結果可知,燒結體D55僅具有C12A7結構。燒結體D55之電子密度為1.6×1021 cm-3,導電率為16 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D55 by the same method as in Example 1, the sintered body D55 had only a C12A7 structure. The sintered body D55 had an electron density of 1.6 × 10 21 cm -3 and a conductivity of 16 S / cm.

藉由與實施例1相同之方法,觀察燒結體D55之表面之形態。其結果為,於燒結體D55之表面上存在厚度約10 μm之白色層,於其正下方觀察到另外之層。該另外之層具有與其他燒結體(例如燒結體D1)中之表面層相同之形態。確認該另外之層之厚度亦有約40 μm~約50 μm從而較厚。 The morphology of the surface of the sintered body D55 was observed by the same method as in Example 1. As a result, a white layer having a thickness of about 10 μm was present on the surface of the sintered body D55, and another layer was observed directly below it. This additional layer has the same morphology as the surface layer in other sintered bodies (for example, sintered body D1). It is confirmed that the thickness of the additional layer is also about 40 μm to about 50 μm so as to be thick.

(比較例6) (Comparative Example 6)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該比較例6係於上述(高導電性鈣鋁石化合物之製作)之步驟中,將進行熱處理之氛圍設為氮氣環境。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, this Comparative Example 6 is in the above-described step (production of a highly conductive mayenite compound), and the atmosphere in which the heat treatment is performed is a nitrogen atmosphere. Other conditions are the same as those in the first embodiment.

藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為奶油色之燒結體(以下,稱為燒結體「D56」)。燒結體D56之相對密度為97.8%。 Thus, after the above-described step of producing the highly conductive mayenite compound, a sintered body having a cream color (hereinafter referred to as a sintered body "D56") can be obtained. The relative density of the sintered body D56 was 97.8%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D56而獲得之粉末之X射線繞射之結果可知,燒結體D56僅具有C12A7結構。燒結體D56之電子密度為測定極限以下,根據上述情況確認,燒結體D56並非高導電性鈣鋁石化合物。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D56 by the same method as in Example 1, the sintered body D56 had only a C12A7 structure. The electron density of the sintered body D56 was not more than the measurement limit. From the above, it was confirmed that the sintered body D56 was not a highly conductive mayenite compound.

表1係匯總表示實施例1~15與比較例1~6中之被處理體之種類、CO源及鈦源之有無、處理溫度、處理時間、以及所獲得之燒結體之電子密度、相對密度、及表面層之厚度。 Table 1 summarizes the types of the objects to be treated, the sources of CO and the source of titanium in Examples 1 to 15 and Comparative Examples 1 to 6, the treatment temperature, the treatment time, and the electron density and relative density of the obtained sintered body. And the thickness of the surface layer.

(實施例21) (Example 21)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例21係於上述(高導電性鈣鋁石化合物之製作)之步驟中,使用鈣鋁石化合物(非導電性)之燒結體E21代替脫脂後之成形體C1。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, in the step of the above (the production of the highly conductive mayenite compound), the sintered body E21 of the mayenite compound (non-conductive) was used instead of the molded body C1 after the degreasing. Other conditions are the same as those in the first embodiment.

再者,鈣鋁石化合物之燒結體E21係以下述方式製作。 Further, the sintered body E21 of the mayenite compound was produced in the following manner.

首先,將經過上述實施例1之(鈣鋁石化合物之成形體之製作)之步驟所獲得之成形體C1配置於氧化鋁板上,於大氣下加熱直至1100℃。升溫速度係設為300℃/小時。繼而,將成形體C1於1100℃下保持2小時之後,以300℃/小時之降溫速度冷卻直至室溫。藉此,可獲得非導電性鈣鋁石化合物之燒結體E21。 First, the molded body C1 obtained through the step of producing the formed body of the mayenite compound of the above-mentioned Example 1 was placed on an alumina plate and heated in the air until 1100 °C. The heating rate was set to 300 ° C / hour. Then, the formed body C1 was kept at 1100 ° C for 2 hours, and then cooled to room temperature at a cooling rate of 300 ° C / hour. Thereby, the sintered body E21 of the non-conductive mayenite compound can be obtained.

使用燒結體E21,實施上述(高導電性鈣鋁石化合物之製作)之步驟。藉此,可獲得表面為黑色之燒結體(以下,稱為燒結體「D21」)。燒結體D21之相對密度為95.8%。 The above step (production of a highly conductive mayenite compound) is carried out using the sintered body E21. Thereby, a sintered body having a black surface (hereinafter referred to as a sintered body "D21") can be obtained. The relative density of the sintered body D21 was 95.8%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D21而獲得之粉末之X射線繞射之結果可知,燒結體D21僅具有C12A7結構。燒結體D21之電子密度為1.6×1021 cm-3,導電率為16 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D21 by the same method as in Example 1, the sintered body D21 had only a C12A7 structure. The sintered body D21 had an electron density of 1.6 × 10 21 cm -3 and a conductivity of 16 S / cm.

根據上述情況確認,燒結體D21係高導電性鈣鋁石化合物。 From the above, it was confirmed that the sintered body D21 is a highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D21之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左 右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D21 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was from about 5 μm to about 10 μm. Right, so the surface layer is extremely thin.

(實施例22) (Example 22)

藉由與上述實施例1相同之方法,製作導電性鈣鋁石化合物。然而,該實施例22係於(鈣鋁石化合物之成形體之製作)之步驟中,使用包含氟成分之混合粉末代替粉末B1,製備成形體C22。其他條件與實施例1之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 1. However, in the step (in the production of the formed body of the mayenite compound), the molded article C22 was prepared by using a mixed powder containing a fluorine component instead of the powder B1. Other conditions are the same as those in the first embodiment.

再者,混合粉末F22係藉由下述步驟製作。 Further, the mixed powder F22 was produced by the following procedure.

(混合粉末之製備方法) (Preparation method of mixed powder)

首先,向以實施例1之(鈣鋁石化合物之合成)之欄中記載之方法所獲得之粉末B1 38.72 g中添加氟化鈣(GaF2,關東化學公司製造,特級)粉末0.73 g、與氧化鋁(α-Al2O3,關東化學公司製造,特級)粉末0.55 g,充分混合該等,獲得混合粉末F22。 First, 0.73 g of calcium fluoride (GaF 2 , manufactured by Kanto Chemical Co., Ltd.) powder was added to 38.72 g of the powder B1 obtained by the method described in the section (Synthesis of the mayenite compound) of Example 1. 0.55 g of a powder of alumina (α-Al 2 O 3 , manufactured by Kanto Chemical Co., Ltd.) was thoroughly mixed, and a mixed powder F22 was obtained.

當假設於最終製造而成之鈣鋁石化合物中亦維持該混合粉末F22之Ca/Al/F之組成比時,所製造之鈣鋁石化合物係以如下化學式表示,尤其是成為x=0.32。 When it is assumed that the composition ratio of Ca/Al/F of the mixed powder F22 is also maintained in the finally produced mayenite compound, the produced mayenite compound is represented by the following chemical formula, in particular, x=0.32.

(12-x)CaO.7Al2O3.xCaF2 (1)式 (12-x) CaO. 7Al 2 O 3 . xCaF 2 (1)

使用利用混合粉末F22製作之成形體C22,實施上述(高導電性鈣鋁石化合物之製作)之步驟。藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D22」)。燒結體D22之相對密度為97.2%。 The above step (production of a highly conductive mayenite compound) is carried out using the molded body C22 produced by using the mixed powder F22. By this, after the above-described step of producing a highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D22") can be obtained. The relative density of the sintered body D22 was 97.2%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D22而獲得之粉末之X射線繞射之結果可知,燒結體D22僅具有 C12A7結構。燒結體D22之電子密度為1.1×1021 cm-3,導電率為12 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D22 by the same method as in Example 1, the sintered body D22 had only a C12A7 structure. The sintered body D22 had an electron density of 1.1 × 10 21 cm -3 and a conductivity of 12 S / cm.

繼而,測定燒結體D22之晶格常數之結果為,燒結體D22之晶格常數小於實施例1中之燒結體D1之值。根據上述情況可認為,燒結體D22係於鈣鋁石化合物中含有氟。 Then, as a result of measuring the lattice constant of the sintered body D22, the lattice constant of the sintered body D22 was smaller than that of the sintered body D1 in the first embodiment. According to the above, it is considered that the sintered body D22 contains fluorine in the mayenite compound.

繼而,使黑色物質D22斷裂,藉由能量分散型X射線分析(EDX,Energy Dispersive X-ray Analysis),進行斷裂面之組成分析。根據分析結果可知,檢測出之氟之比率接近混合粉末F22之混合比。 Then, the black substance D22 was broken, and the composition analysis of the fracture surface was performed by Energy Dispersive X-ray Analysis (EDX). According to the analysis results, the ratio of the detected fluorine was close to the mixing ratio of the mixed powder F22.

如此,確認燒結體D22係包含氟之高導電性鈣鋁石化合物之燒結體。 Thus, it was confirmed that the sintered body D22 is a sintered body of a fluorine-containing highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D22之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D22 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例23) (Example 23)

藉由與上述實施例22相同之方法,製作導電性鈣鋁石化合物。然而,該實施例23係於上述(混合粉末之製備方法)之步驟中,於39.78 g粉末B1中添加氟化鈣(CaF2,關東化學公司製造,特級)粉末0.12 g、及氧化鋁(α-Al2O3,關東化學公司製造,特級)粉末0.09 g,充分混合該等,獲得混合粉末F23。 A conductive mayenite compound was produced by the same method as in the above Example 22. However, this Example 23 was added to the above-mentioned (preparation method of the mixed powder), and added calcium fluoride (CaF 2 , manufactured by Kanto Chemical Co., Ltd.) powder of 0.12 g, and alumina (α) to 39.78 g of powder B1. -Al 2 O 3 , manufactured by Kanto Chemical Co., Ltd., special grade) powder 0.09 g, and the mixture was thoroughly mixed to obtain a mixed powder F23.

當假設於最終製造而成之鈣鋁石化合物中亦維持該混合粉末F23之Ca/Al/F之組成比時,所製造之鈣鋁石化合物係以上述化學式(3)表示,尤其是成為x=0.06。 When it is assumed that the composition ratio of Ca/Al/F of the mixed powder F23 is also maintained in the finally produced mayenite compound, the manufactured mayenite compound is represented by the above chemical formula (3), especially as x. =0.06.

其他條件與實施例22相同。 Other conditions were the same as in Example 22.

使用利用混合粉末F23製作之成形體C23,實施上述(高導電性鈣鋁石化合物之製作)之步驟。藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D23」)。燒結體D23之相對密度為96.0%。 The above step (production of a highly conductive mayenite compound) is carried out using the molded body C23 produced by the mixed powder F23. By this, after the above-described step of producing a highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D23") can be obtained. The relative density of the sintered body D23 was 96.0%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D23而獲得之粉末之X射線繞射之結果可知,燒結體D23僅具有C12A7結構。燒結體D23之電子密度為1.1×1021 cm-3,導電率為11 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D23 by the same method as in Example 1, the sintered body D23 has only a C12A7 structure. The sintered body D23 had an electron density of 1.1 × 10 21 cm -3 and a conductivity of 11 S / cm.

繼而,測定燒結體D23之晶格常數之結果為,燒結體D23之晶格常數小於實施例1中之燒結體D1之值。根據上述情況可認為,燒結體D23係於鈣鋁石化合物中含有氟。 Then, as a result of measuring the lattice constant of the sintered body D23, the lattice constant of the sintered body D23 was smaller than that of the sintered body D1 in the first embodiment. According to the above, it is considered that the sintered body D23 contains fluorine in the mayenite compound.

繼而,使黑色物質D23斷裂,藉由能量分散型X射線分析(EDX),進行斷裂面之組成分析。根據分析結果可知,檢測出之氟之比率接近混合粉末F23之混合比。 Then, the black substance D23 was broken, and the composition analysis of the fracture surface was performed by energy dispersive X-ray analysis (EDX). According to the analysis results, the ratio of the detected fluorine was close to the mixing ratio of the mixed powder F23.

如此,確認燒結體D23係包含氟之高導電性鈣鋁石化合物之燒結體。 Thus, it was confirmed that the sintered body D23 is a sintered body of a fluorine-containing highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D23之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D23 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例24) (Example 24)

藉由與上述實施例22相同之方法,製作導電性鈣鋁石化合物。然而,該實施例24係於上述(混合粉末之製備方法) 之步驟中,於38.11 g粉末B1中添加氟化鈣(CaF2,關東化學公司製造,特級)粉末1.07 g、與氧化鋁(α-Al2O3,關東化學公司製造,特級)粉末0.82 g,充分混合該等,獲得混合粉末F24。 A conductive mayenite compound was produced by the same method as in the above Example 22. However, this Example 24 was added to the above-mentioned (preparation method of the mixed powder), and calcium fluoride (CaF 2 , manufactured by Kanto Chemical Co., Ltd., special grade) powder of 1.07 g, and alumina (α) was added to 38.11 g of powder B1. -Al 2 O 3 , manufactured by Kanto Chemical Co., Ltd., special grade) 0.82 g of powder, and the mixture was thoroughly mixed to obtain a mixed powder F24.

當假設於最終製造而成之鈣鋁石化合物中亦維持該混合粉末F24之Ca/Al/F之組成比時,所製造之鈣鋁石化合物係以上述化學式(3)表示,尤其是成為x=0.48。 When it is assumed that the composition ratio of Ca/Al/F of the mixed powder F24 is also maintained in the finally produced mayenite compound, the manufactured mayenite compound is represented by the above chemical formula (3), especially as x. =0.48.

其他條件與實施例22相同。 Other conditions were the same as in Example 22.

使用利用混合粉末F24製作之成形體C24,實施上述(高導電性鈣鋁石化合物之製作)之步驟。藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D24」)。燒結體D24之相對密度為95.7%。 The above step (production of a highly conductive mayenite compound) is carried out using the molded body C24 produced by using the mixed powder F24. Thereby, after the above-described step of producing the highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D24") can be obtained. The relative density of the sintered body D24 was 95.7%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D24而獲得之粉末之X射線繞射之結果可知,燒結體D24僅具有C12A7結構。燒結體D24之電子密度為1.0×1021 cm-3,導電率為10 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D24 by the same method as in Example 1, the sintered body D24 had only a C12A7 structure. The sintered body D24 had an electron density of 1.0 × 10 21 cm -3 and a conductivity of 10 S / cm.

繼而,測定燒結體D24之晶格常數之結果為,燒結體D24之晶格常數小於實施例1中之燒結體D1之值。根據上述情況可認為,燒結體D24於鈣鋁石化合物中含有氟。 Then, as a result of measuring the lattice constant of the sintered body D24, the lattice constant of the sintered body D24 was smaller than that of the sintered body D1 in the first embodiment. From the above, it is considered that the sintered body D24 contains fluorine in the mayenite compound.

繼而,使黑色物質D24斷裂,藉由能量分散型X射線分析(EDX),進行斷裂面之組成分析。根據分析結果可知,檢測出之氟之比率接近混合粉末F24之混合比。 Then, the black substance D24 was broken, and the composition analysis of the fracture surface was performed by energy dispersive X-ray analysis (EDX). According to the analysis results, the ratio of the detected fluorine was close to the mixing ratio of the mixed powder F24.

如此,確認燒結體D24係包含氟之高導電性鈣鋁石化合 物之燒結體。 Thus, it was confirmed that the sintered body D24 is a highly conductive calcium-aluminum petrochemical compound containing fluorine. a sintered body of matter.

又,藉由與實施例1相同之方法,評價燒結體D24之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D24 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

(實施例25) (Embodiment 25)

藉由與上述實施例22相同之方法,製作導電性鈣鋁石化合物。然而,該實施例25係於上述(高導電性鈣鋁石化合物之製作)之步驟中,使用包含氟之鈣鋁石化合物(非導電性)之燒結體E25代替成形體C22。其他條件與實施例22之情形相同。 A conductive mayenite compound was produced by the same method as in the above Example 22. However, in the step 25 of the above (manufacturing of the highly conductive mayenite compound), the sintered body E25 containing the mayenite compound (non-conductive) of fluorine is used instead of the formed body C22. Other conditions are the same as those in the embodiment 22.

再者,鈣鋁石化含物之燒結體E25係以如下方式製作。 Further, the sintered body E25 of the calcium-aluminum petrochemical content was produced in the following manner.

首先,將上述實施例22之成形體C22配置於氧化鋁板上,於大氣下加熱直至1100℃。升溫速度設為300℃/小時。繼而,將成形體C22於1100℃下保持2小時之後,以300℃/小時之降溫速度冷卻直至室溫。藉此,可獲得包含氟之非導電性鈣鋁石化合物之燒結體E25。 First, the formed body C22 of the above Example 22 was placed on an alumina plate and heated in the air until 1100 °C. The heating rate was set to 300 ° C / hour. Then, the formed body C22 was kept at 1,100 ° C for 2 hours, and then cooled to room temperature at a cooling rate of 300 ° C / hour. Thereby, the sintered body E25 containing the fluorine-containing non-conductive mayenite compound can be obtained.

使用燒結體E25,實施上述(高導電性鈣鋁石化合物之製作)之步驟。藉此,於上述(高導電性鈣鋁石化合物之製作)之步驟後,可獲得表面為黑色之燒結體(以下,稱為燒結體「D25」)。燒結體D25之相對密度為95.6%。 The above step (production of a highly conductive mayenite compound) is carried out using the sintered body E25. Thereby, after the above-described step of producing a highly conductive mayenite compound, a sintered body having a black surface (hereinafter referred to as a sintered body "D25") can be obtained. The relative density of the sintered body D25 was 95.6%.

進而,藉由與實施例1相同之方法,粉碎該燒結體D25而獲得之粉末之X射線繞射之結果可知,燒結體D25僅具有C12A7結構。燒結體D25之電子密度為1.0×1021 cm-3,導電率為10 S/cm。 Further, as a result of X-ray diffraction of the powder obtained by pulverizing the sintered body D25 by the same method as in Example 1, the sintered body D25 has only a C12A7 structure. The sintered body D25 had an electron density of 1.0 × 10 21 cm -3 and a conductivity of 10 S / cm.

繼而,測定燒結體D25之晶格常數之結果為,燒結體D25之晶格常數小於實施例1中之燒結體D1之值。根據上述情況可認為,於鈣鋁石化合物中含有氟。 Then, as a result of measuring the lattice constant of the sintered body D25, the lattice constant of the sintered body D25 was smaller than that of the sintered body D1 in the first embodiment. According to the above, it is considered that fluorine is contained in the mayenite compound.

繼而,使黑色物質D25斷裂,藉由能量分散型X射線分析(EDX),進行斷裂面之組成分析。根據分析結果可知,檢測出之氟之比率接近混合粉末F22之混合比。 Then, the black substance D25 was broken, and the composition analysis of the fracture surface was performed by energy dispersive X-ray analysis (EDX). According to the analysis results, the ratio of the detected fluorine was close to the mixing ratio of the mixed powder F22.

如此,確認燒結體D25係包含氟之高導電性鈣鋁石化合物之燒結體。 Thus, it was confirmed that the sintered body D25 is a sintered body of a fluorine-containing highly conductive mayenite compound.

又,藉由與實施例1相同之方法,評價燒結體D25之表面層之厚度之結果確認,表面層之厚度為約5 μm~約10 μm左右,從而表面層極薄。 Further, as a result of evaluating the thickness of the surface layer of the sintered body D25 by the same method as in Example 1, it was confirmed that the thickness of the surface layer was about 5 μm to about 10 μm, and the surface layer was extremely thin.

表2係匯總表示實施例21~25中之被處理體之種類、CO源及鈦源之有無、處理溫度、處理時間、以及所獲得之燒結體之電子密度、相對密度、及表面層之厚度。 Table 2 summarizes the types of the objects to be treated in Examples 21 to 25, the presence or absence of the CO source and the titanium source, the treatment temperature, the treatment time, and the electron density, relative density, and thickness of the surface layer of the obtained sintered body. .

再者,於表2中,「F添加量(x值)」之欄中之數值係表示被處理體所含之氟(F)量。該值意指當假設由被處理體製造最終以如下(1)式表示之鈣鋁石化合物時之x之值。 In addition, in Table 2, the numerical value in the column of "F addition amount (x value)" shows the amount of fluorine (F) contained in the to-be-processed object. This value means the value of x when it is assumed that the mayenite compound finally represented by the following formula (1) is produced from the object to be processed.

(12-x)CaO.7Al2O3.xCaF2 (1)式 (12-x) CaO. 7Al 2 O 3 . xCaF 2 (1)

產業上之可利用性Industrial availability

本發明可應用於形成有機EL(Electro-Luminescence,電致發光)元件之電子注入層之薄膜所必需之濺鍍用靶、或螢光燈等中能使用的導電性鈣鋁石化合物製構件之製造方法。 The present invention can be applied to a target for sputtering necessary for forming a thin film of an electron injecting layer of an organic EL (Electro-Luminescence) element, or a member made of a conductive mayenite compound which can be used in a fluorescent lamp or the like. Production method.

本案係基於2011年12月20日提出申請之日本專利申請案2011-278869號而主張優先權者,並藉由參照而將該日本專利申請案之全部內容引用於本文中。 The present invention is based on Japanese Patent Application No. 2011-278869, filed on Dec.

100‧‧‧裝置 100‧‧‧ device

120‧‧‧碳容器 120‧‧‧carbon container

130‧‧‧碳蓋 130‧‧‧ Carbon cover

140‧‧‧隔板 140‧‧‧Baffle

145‧‧‧耐熱皿 145‧‧ ‧Heat-resistant dish

150‧‧‧金屬鈦粉末之層 150‧‧‧layer of metal titanium powder

160‧‧‧被處理體 160‧‧‧Processed body

170‧‧‧排氣口 170‧‧‧Exhaust port

300‧‧‧裝置 300‧‧‧ device

310‧‧‧氧化鋁容器 310‧‧‧Alumina container

315‧‧‧氧化鋁板 315‧‧‧Alumina plate

320‧‧‧鈦層 320‧‧‧Titanium layer

330‧‧‧碳容器 330‧‧‧Carbon container

335‧‧‧碳製之蓋 335‧‧‧Carbon cover

圖1係模式性地表示本發明之高導電性鈣鋁石化合物之製造方法之一例的流程圖。 Fig. 1 is a flow chart schematically showing an example of a method for producing a highly conductive mayenite compound of the present invention.

圖2係模式性地表示對被處理體進行高溫處理時所使用之裝置之一構成例的圖。 Fig. 2 is a view schematically showing an example of the configuration of a device used for high-temperature treatment of a target object.

圖3係模式性地表示對實施例1之成形體C1進行高溫處理時使用之裝置之構成的圖。 Fig. 3 is a view schematically showing the configuration of an apparatus used for high-temperature processing of the molded body C1 of the first embodiment.

Claims (10)

一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)準備鈣鋁石化合物之粉末;及(2)於一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之鈣鋁石化合物之粉末之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 A manufacturing method characterized by being a method for producing a conductive mayenite compound, and comprising the steps of: (1) preparing a powder of a mayenite compound; and (2) supplying carbon monoxide gas and a source of titanium In the presence of the titanium vapor, the object to be treated containing the powder of the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, and is subjected to an inert gas atmosphere other than nitrogen or a reduced pressure environment. Next, the object to be processed is maintained at a temperature in the range of 1230 ° C to 1380 ° C. 如請求項1之製造方法,其中包含上述鈣鋁石化合物之粉末之被處理體係包含上述鈣鋁石化合物之粉末之成形體。 The method of claim 1, wherein the processed system comprising the powder of the mayenite compound comprises a shaped body of the powder of the mayenite compound. 如請求項2之製造方法,其中上述被處理體係藉由將包含上述鈣鋁石化合物之粉末之成形體安裝於導電性構件而構成。 The method of claim 2, wherein the processed system is configured by attaching a molded body of the powder containing the mayenite compound to a conductive member. 一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)準備包含鈣鋁石化合物之燒結體;及(2)於一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之包含鈣鋁石化合物之燒結體的被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理 體保持於1230℃~1380℃之範圍之溫度。 A manufacturing method, characterized in that it is a method for producing a conductive mayenite compound, and comprises the steps of: (1) preparing a sintered body containing a mayenite compound; and (2) carbon monoxide gas and a source of titanium In the presence of the supplied titanium vapor, the object to be processed containing the sintered body containing the mayenite compound prepared in the above step (1) is placed in contact with the titanium source, and is in an inert gas atmosphere other than nitrogen. Or under reduced pressure, the above is processed The body is maintained at a temperature ranging from 1230 ° C to 1380 ° C. 一種製造方法,其特徵在於:其係製造導電性鈣鋁石化合物之方法,且包括如下步驟:(1)準備預燒粉之成形體;及(2)於一氧化碳氣體及由鈦源所供給之鈦蒸氣之存在下,以未與上述鈦源接觸之狀態配置包含上述步驟(1)中準備之預燒粉之成形體之被處理體,並於除氮以外之惰性氣體環境、或減壓環境下,將上述被處理體保持於1230℃~1380℃之範圍之溫度。 A manufacturing method characterized by being a method for producing a conductive mayenite compound, and comprising the steps of: (1) preparing a shaped body of a calcined powder; and (2) supplying carbon monoxide gas and a source of titanium In the presence of the titanium vapor, the object to be processed containing the formed body of the calcined powder prepared in the above step (1) is placed in contact with the titanium source, and is subjected to an inert gas atmosphere other than nitrogen or a reduced pressure environment. Next, the object to be processed is maintained at a temperature in the range of 1230 ° C to 1380 ° C. 如請求項1至5中任一項之製造方法,其中上述(2)之步驟係於將上述被處理體及上述鈦源放入包含碳之容器中之狀態下進行。 The production method according to any one of claims 1 to 5, wherein the step (2) is carried out in a state in which the object to be processed and the titanium source are placed in a container containing carbon. 如請求項1至6中任一項之製造方法,其中於上述(2)之步驟後所獲得之導電性鈣鋁石化合物具有3.0×1020 cm-3以上之電子密度。 The production method according to any one of claims 1 to 6, wherein the conductive mayenite compound obtained after the step (2) has an electron density of 3.0 × 10 20 cm -3 or more. 如請求項1至7中任一項之製造方法,其中上述被處理體包含氟(F),且於上述(2)之步驟後,可獲得包含氟之導電性鈣鋁石化合物。 The production method according to any one of claims 1 to 7, wherein the object to be treated contains fluorine (F), and after the step (2), a conductive mayenite compound containing fluorine can be obtained. 一種螢光燈用之電極,其包含藉由如請求項1至8中任一項之製造方法而製造之導電性鈣鋁石化合物。 An electrode for a fluorescent lamp, comprising a conductive mayenite compound produced by the production method according to any one of claims 1 to 8. 一種製造方法,其係使用如請求項1至8中任一項之製造方法,製造包含導電性鈣鋁石化合物之成膜用之靶之方法。 A method of producing a method for forming a film-forming target of a conductive mayenite compound by using the production method according to any one of claims 1 to 8.
TW101142694A 2011-12-20 2012-11-15 Process for producing conductive mayenite compound and electrode for fluorescent lamp TWI597240B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011278869 2011-12-20

Publications (2)

Publication Number Publication Date
TW201326045A true TW201326045A (en) 2013-07-01
TWI597240B TWI597240B (en) 2017-09-01

Family

ID=48668245

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101142694A TWI597240B (en) 2011-12-20 2012-11-15 Process for producing conductive mayenite compound and electrode for fluorescent lamp

Country Status (3)

Country Link
JP (1) JP5971258B2 (en)
TW (1) TWI597240B (en)
WO (1) WO2013094346A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104684868B (en) * 2012-09-28 2017-07-07 旭硝子株式会社 The manufacture method of the electric conductivity mayenite compound of high electron density
KR20150063049A (en) 2012-09-28 2015-06-08 아사히 가라스 가부시키가이샤 Method for producing conductive mayenite compound having high-electron-density
JP6885015B2 (en) * 2016-10-17 2021-06-09 Agc株式会社 Method for Producing Conductive Mayenite Compound and Sintered Body of Conductive Mayenite Compound

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1900689B1 (en) * 2005-05-30 2016-03-30 Asahi Glass Company, Limited Process for producing electroconductive mayenite compound
JP4833221B2 (en) * 2005-11-24 2011-12-07 独立行政法人科学技術振興機構 Method for producing metallic electrically conductive 12CaO.7Al2O3 compound
KR101160131B1 (en) * 2010-05-11 2012-06-26 한국세라믹기술원 Manufacturing method of dodecacalcium hepta-aluminate electride

Also Published As

Publication number Publication date
JP5971258B2 (en) 2016-08-17
TWI597240B (en) 2017-09-01
WO2013094346A1 (en) 2013-06-27
JPWO2013094346A1 (en) 2015-04-27

Similar Documents

Publication Publication Date Title
JP5358891B2 (en) Method for producing sintered zinc oxide
TWI540100B (en) Preparation method of conductive bauxite compound
JP6028797B2 (en) Method for producing conductive mayenite compound having high electron density and target
US9428827B2 (en) Method of manufacturing electrically conductive mayenite compound with high electron density
TWI597240B (en) Process for producing conductive mayenite compound and electrode for fluorescent lamp
US9879338B2 (en) Method of manufacturing electrically conductive mayenite compound with high electron density
JP2012126618A (en) Method for producing conductive mayenite compound
JP2011195924A (en) In-Ga-Zn BASED COMPOUND OXIDE SINTERED BODY, AND METHOD FOR MANUFACTURING THE SAME
TW201319007A (en) Conductive mayenite compound sintered compact, sputtering target, and method for producing conductive mayenite compound sintered compact
WO2014077215A1 (en) Method for manufacturing electroconductive mayenite compound
JP2013224259A (en) Zinc oxide sintered body, and method for producing the same
WO2012157462A1 (en) Method for producing member containing conductive mayenite compound
JP5842914B2 (en) Method for producing electrode containing conductive mayenite compound
JP2012238523A (en) Method for manufacturing electrode including conductive mayenite compound and metal conductor
JP2012236749A (en) Method of manufacturing member containing conductive mayenite compound

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees