TW201319882A - Method for manufacturing touch panel - Google Patents

Method for manufacturing touch panel Download PDF

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TW201319882A
TW201319882A TW100140763A TW100140763A TW201319882A TW 201319882 A TW201319882 A TW 201319882A TW 100140763 A TW100140763 A TW 100140763A TW 100140763 A TW100140763 A TW 100140763A TW 201319882 A TW201319882 A TW 201319882A
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layer
patterned photoresist
region
photoresist layer
patterned
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TW100140763A
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TWI439901B (en
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You-Li Tsai
Wei-Yen Chiu
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Chunghwa Picture Tubes Ltd
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Abstract

Disclosed herein is a method for manufacturing a touch panel. The method includes steps described below. A metal layer is formed on a substrate. A patterned photoresist layer is formed on the metal layer. The patterned photoresist layer has a first region and a second region. A thickness of the patterned photoresist layer of the first region is greater than a thickness of the patterned photoresist layer of the second region. The exposed metal layer is then removed to form a metal wire. The patterned photoresist layer is thinned to remove the patterned photoresist layer of the second region. An insulating layer is formed on the metal wire, the substrate, and the patterned photoresist layer of the first region. The patterned photoresist layer of the first region and the insulating layer thereon are then removed to form a contact window in the insulating layer. A patterned transparent conductive layer is formed in the contact window and on the insulating layer. A passivation layer is formed on the patterned transparent conductive layer.

Description

觸控面板之製造方法Touch panel manufacturing method

本發明是有關於一種觸控面板及其製造方法。The present invention relates to a touch panel and a method of fabricating the same.

觸控介面由於可讓使用者輕鬆輸入資料及點選功能,因此相關的觸控技術也越來越多元化。觸控面板依照感應原理的不同,可分為電阻式(Resistive)、電容式(Capacitive)、超音波式(Surface Acoustic Wave)及光學式(Optics)。上述電容式觸控面板又可分為表面電容式(Surface Capacitive)及投射電容式(Projected Capacitive)。近年來,以具有多點觸控(Multi-Touch)功能的投射電容式觸控技術最為受到矚目。The touch interface is more and more diversified because it allows users to easily input data and click functions. According to different sensing principles, touch panels can be classified into Resistive, Capacitive, Surface Acoustic Wave, and Optics. The capacitive touch panel can be further divided into a surface capacitive type and a projected capacitive type (Projected Capacitive). In recent years, projected capacitive touch technology with multi-touch function has attracted the most attention.

一般的投射電容式技術是利用電極與觸控物間的產生電容耦合,並量測電極的電容變化來確定觸控位置。這是因為投射式電容觸控面板中可採用單層或多層圖案化的透明電極來作為感測單元,因此可得到精確的觸控位置。The general projected capacitive technology utilizes the capacitive coupling between the electrodes and the touch object, and measures the capacitance change of the electrodes to determine the touch position. This is because a single-layer or multi-layer patterned transparent electrode can be used as the sensing unit in the projected capacitive touch panel, so that an accurate touch position can be obtained.

上述投射式電容面板若採用單層圖案化的透明電極,其製造流程通常需要四道光罩製程。四道光罩製程分別用以形成圖案化的金屬線、絕緣層、透明電極以及保護層。若採用雙層圖案化的透明電極,則需要五道光罩製程。If the above-mentioned projected capacitive panel adopts a single-layer patterned transparent electrode, the manufacturing process usually requires four mask processes. The four mask processes are used to form patterned metal lines, insulating layers, transparent electrodes, and protective layers, respectively. If a double-layer patterned transparent electrode is used, a five-mask process is required.

若製程所需光罩越多,則製造時間越長。因此,需要一種新穎的製造方法,期能減少製程步驟,以降低製程時間及降低製程成本。The more masks are required for the process, the longer the manufacturing time. Therefore, there is a need for a novel manufacturing method that reduces process steps to reduce process time and process cost.

本發明之一態樣是在提供一種觸控面板之製造方法,其包含下列步驟。形成金屬層於基板上。形成圖案化光阻層於金屬層上,並露出一部分的金屬層。上述圖案化光阻層具有第一區及第二區,且第一區之圖案化光阻層的厚度大於第二區之圖案化光阻層的厚度。移除露出部分之金屬層,以形成金屬導線並露出一部分的基板。薄化圖案化光阻層,以移除第二區之圖案化光阻層,使其下方的金屬導線露出。形成絕緣層於露出之金屬導線、露出部分之基板及第一區之圖案化光阻層上。移除第一區之圖案化光阻層及位於其上之絕緣層,以於絕緣層中形成接觸窗。形成圖案化透明導電層於接觸窗中及絕緣層上。形成保護層於圖案化透明導電層上。One aspect of the present invention provides a method of manufacturing a touch panel comprising the following steps. A metal layer is formed on the substrate. A patterned photoresist layer is formed on the metal layer and a portion of the metal layer is exposed. The patterned photoresist layer has a first region and a second region, and the thickness of the patterned photoresist layer of the first region is greater than the thickness of the patterned photoresist layer of the second region. The exposed portion of the metal layer is removed to form a metal wire and expose a portion of the substrate. The patterned photoresist layer is thinned to remove the patterned photoresist layer of the second region to expose the metal wires underneath. An insulating layer is formed on the exposed metal wires, the exposed portion of the substrate, and the patterned photoresist layer of the first region. The patterned photoresist layer of the first region and the insulating layer thereon are removed to form a contact window in the insulating layer. A patterned transparent conductive layer is formed in the contact window and on the insulating layer. A protective layer is formed on the patterned transparent conductive layer.

在一實施方式中,形成圖案化光阻層步驟包含使用一灰階光罩。In one embodiment, the step of forming the patterned photoresist layer comprises using a gray scale mask.

在一實施方式中,圖案化光阻層用以定義金屬導線。In one embodiment, the patterned photoresist layer is used to define metal wires.

在一實施方式中,第一區之圖案化光阻層用以定義接觸窗。In one embodiment, the patterned photoresist layer of the first region is used to define a contact window.

在一實施方式中,在薄化圖案化光阻層後,第一區之圖案化光阻層的厚度大於絕緣層的厚度。In one embodiment, after thinning the patterned photoresist layer, the thickness of the patterned photoresist layer of the first region is greater than the thickness of the insulating layer.

在一實施方式中,第一區之圖案化光阻層的厚度對絕緣層的厚度之比為約3:1至5:1。In one embodiment, the ratio of the thickness of the patterned photoresist layer of the first region to the thickness of the insulating layer is about 3:1 to 5:1.

在一實施方式中,移除第一區之圖案化光阻層及位於其上之絕緣層步驟包含使用一溶液溶解第一區之圖案化光阻層。In one embodiment, the step of removing the patterned photoresist layer of the first region and the insulating layer thereon comprises dissolving the patterned photoresist layer of the first region using a solution.

在一實施方式中,上述透明導電層包含氧化銦錫。In one embodiment, the transparent conductive layer comprises indium tin oxide.

在一實施方式中,薄化圖案化光阻層的步驟包含以氧氣電漿處理圖案化光阻層。In one embodiment, the step of thinning the patterned photoresist layer comprises treating the patterned photoresist layer with oxygen plasma.

在一實施方式中,形成保護層的步驟包含於保護層形成一開口,以露出圖案化透明導電層。In one embodiment, the step of forming a protective layer includes forming an opening in the protective layer to expose the patterned transparent conductive layer.

由上述可知,本製造方法可利用三道光罩製程製作觸控面板,因此可縮短製程時間及減少生產成本。As can be seen from the above, the manufacturing method can manufacture the touch panel by using three mask processes, thereby shortening the processing time and reducing the production cost.

上述發明內容旨在提供本揭示內容的簡化摘要,以使閱讀者對本揭示內容具備基本的理解。此發明內容並非本揭示內容的完整概述,且其用意並非在指出本發明實施例的重要/關鍵元件或界定本發明的範圍。在參閱下文實施方式後,本發明所屬技術領域中具有通常知識者當可輕易瞭解本發明之基本精神及其他發明目的,以及本發明所採用之技術手段與實施態樣。The Summary of the Invention is intended to provide a simplified summary of the present disclosure in order to provide a basic understanding of the disclosure. This Summary is not an extensive overview of the disclosure, and is not intended to be an The basic spirit and other objects of the present invention, as well as the technical means and implementations of the present invention, will be readily apparent to those skilled in the art of the invention.

以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

第1圖係繪示依照本發明一實施方式的觸控面板之俯視示意圖。第2A-2F圖繪示本發明一實施方式之觸控面板的製造方法中各製程階段的剖面示意圖,其為沿著第1圖中A-A’之剖面線段。以下將詳細說明各個製程步驟。FIG. 1 is a schematic top plan view of a touch panel according to an embodiment of the invention. 2A-2F is a cross-sectional view showing each process stage in the method of manufacturing the touch panel according to the embodiment of the present invention, which is a section along the line A-A' in Fig. 1. The various process steps will be described in detail below.

首先,形成金屬層120於基板110上,如第2A圖所示。基板的材質例如可為玻璃。金屬層120的材質可為鋁(Aluminum)、鉻(Chromium)、鎳(Nickel)、鉬(Molybdenum)或釹(Neodymium)。例如可使用濺鍍製程來製作金屬層120。First, a metal layer 120 is formed on the substrate 110 as shown in FIG. 2A. The material of the substrate may be, for example, glass. The material of the metal layer 120 may be aluminum, Chromium, nickel (nickel), molybdenum or neodymium. For example, the metal layer 120 can be formed using a sputtering process.

然後,形成圖案化光阻層130於金屬層120上,並露出一部分的金屬層120,如第2A圖所示。上述圖案化光阻層130可分為第一區130a及第二區130b,且第一區130a之圖案化光阻層130的厚度大於第二區130b之圖案化光阻層130的厚度。在一實施方式中,可使用灰階光罩來形成圖案化光阻層130的第一區130a及第二區130b。舉例來說,可先形成一層光阻層,然後藉由灰階光罩來定義光阻層的的第一區130a及第二區130b的圖案。隨後,經過顯影製程,而可得到不同位置具有不同厚度的圖案化光阻層130。上述光阻層可為正型光阻或負型光阻。這是因為在灰階光罩上各位置的光穿透率不同,使得微影後的圖案化光阻層130具有不同的厚度。可使用高對比的光阻劑來製作,而可在顯影製程後得到較陡側壁的圖案化光阻層130。Then, a patterned photoresist layer 130 is formed on the metal layer 120, and a portion of the metal layer 120 is exposed, as shown in FIG. 2A. The patterned photoresist layer 130 can be divided into a first region 130a and a second region 130b, and the thickness of the patterned photoresist layer 130 of the first region 130a is greater than the thickness of the patterned photoresist layer 130 of the second region 130b. In an embodiment, a gray scale mask can be used to form the first region 130a and the second region 130b of the patterned photoresist layer 130. For example, a photoresist layer may be formed first, and then the pattern of the first region 130a and the second region 130b of the photoresist layer is defined by a gray scale mask. Subsequently, through the development process, the patterned photoresist layer 130 having different thicknesses at different positions can be obtained. The photoresist layer may be a positive photoresist or a negative photoresist. This is because the light transmittance at each position on the gray scale mask is different, so that the patterned photoresist layer 130 after the lithography has a different thickness. It can be fabricated using a high contrast photoresist, and a patterned photoresist layer 130 with a steeper sidewall can be obtained after the development process.

然後,根據圖案化光阻層130來移除露出部分的金屬層120,以形成金屬導線122並露出一部分的基板110,如第2B圖所示。例如可使用濕式蝕刻製程來移除露出的金屬層120。因此,圖案化光阻層130的第一區130a及第二區130b可用以定義金屬導線122的圖案。Then, the exposed portion of the metal layer 120 is removed according to the patterned photoresist layer 130 to form the metal wires 122 and expose a portion of the substrate 110 as shown in FIG. 2B. For example, a wet etch process can be used to remove the exposed metal layer 120. Thus, the first region 130a and the second region 130b of the patterned photoresist layer 130 can be used to define a pattern of metal lines 122.

接著,薄化圖案化光阻層130而移除第二區130b之圖案化光阻層,以露出原本第二區130b之圖案化光阻層130下方的金屬導線122,如第2B圖所示。例如可使用氧氣電漿來去除一定厚度的圖案化光阻層130,直至完全去除第二區130b的圖案化光阻層130。因此,可暴露出第二區130b之圖案化光阻層130下方的金屬導線122。並且,第一區130a之圖案化光阻層130的厚度也會變薄。留下的第一區130a之圖案化光阻層130的厚度可例如為1.0至1.5 μm。接下來,可根據剩餘的第一區130a之圖案化光阻層130來設計相關製程以製造其他層的結構。Next, the patterned photoresist layer 130 is thinned to remove the patterned photoresist layer of the second region 130b to expose the metal wires 122 under the patterned photoresist layer 130 of the second region 130b, as shown in FIG. 2B. . For example, oxygen plasma can be used to remove the patterned photoresist layer 130 of a certain thickness until the patterned photoresist layer 130 of the second region 130b is completely removed. Therefore, the metal wires 122 under the patterned photoresist layer 130 of the second region 130b can be exposed. Also, the thickness of the patterned photoresist layer 130 of the first region 130a is also reduced. The thickness of the patterned photoresist layer 130 of the remaining first region 130a may be, for example, 1.0 to 1.5 μm. Next, the related process can be designed according to the patterned photoresist layer 130 of the remaining first region 130a to fabricate the structure of the other layers.

隨後,形成絕緣層140於露出的金屬導線122、露出部分的基板110及第一區130a之圖案化光阻層130上,如第2C圖所示。絕緣層140的材質可為氧化矽。例如可使用化學氣相沉積法來形成絕緣層140。在沉積絕緣層140的製程中,第一區130a之圖案化光阻層130側邊沉積的絕緣層140的厚度可能偏薄或露出部分圖案化光阻層130。Subsequently, an insulating layer 140 is formed on the exposed metal wires 122, the exposed portion of the substrate 110, and the patterned photoresist layer 130 of the first region 130a, as shown in FIG. 2C. The material of the insulating layer 140 may be yttrium oxide. The insulating layer 140 can be formed, for example, using a chemical vapor deposition method. In the process of depositing the insulating layer 140, the thickness of the insulating layer 140 deposited on the side of the patterned photoresist layer 130 of the first region 130a may be thin or expose a portion of the patterned photoresist layer 130.

在一實施方式中,第一區130a之圖案化光阻層130的厚度大於絕緣層140的厚度。舉例來說,在第一區130a之圖案化光阻層130上方之絕緣層140的厚度可例如為0.2至0.3 μm。In an embodiment, the thickness of the patterned photoresist layer 130 of the first region 130a is greater than the thickness of the insulating layer 140. For example, the thickness of the insulating layer 140 over the patterned photoresist layer 130 of the first region 130a may be, for example, 0.2 to 0.3 μm.

在一實施方式中,第一區130a之圖案化光阻層130的厚度對絕緣層140的厚度之比為約3:1至5:1。若上述厚度比越大,則可能露出的圖案化光阻層130的面積越大。In one embodiment, the ratio of the thickness of the patterned photoresist layer 130 of the first region 130a to the thickness of the insulating layer 140 is about 3:1 to 5:1. If the thickness ratio is larger, the area of the patterned photoresist layer 130 that is exposed may be larger.

然後,移除第一區130a之圖案化光阻層130及位於其上之絕緣層140,以於絕緣層140中形成接觸窗140a,如第2D圖所示。移除的方法可利用剝離法(lift-off method)。詳細來說,可先使用溶液來溶解光阻層。溶液例如可為鹼性溶液。藉由溶液接觸暴露出的圖案化光阻層130,進而溶解整個圖案化光阻層130。因此,可連帶地將圖案化光阻層130上方的絕緣層140剝離,而可於絕緣層140中形成接觸窗140a。接觸窗140露出一部分的金屬導線122。由此可知,第一區130a之圖案化光阻層130可用以定義接觸窗140a。因此,圖案化光阻層130除了可用以定義金屬導線122之外,在薄化後所留下的第一區130a之圖案化光阻層130還可用以定義絕緣層140中的接觸窗140a。綜合上述可知,可利用一道灰階光罩及剝離法來製作金屬導線122及絕緣層140的結構。Then, the patterned photoresist layer 130 of the first region 130a and the insulating layer 140 thereon are removed to form a contact window 140a in the insulating layer 140, as shown in FIG. 2D. The method of removal can utilize a lift-off method. In detail, a solution can be used first to dissolve the photoresist layer. The solution can be, for example, an alkaline solution. The exposed patterned photoresist layer 130 is dissolved by contact with the exposed patterned photoresist layer 130. Therefore, the insulating layer 140 above the patterned photoresist layer 130 can be peeled off, and the contact window 140a can be formed in the insulating layer 140. The contact window 140 exposes a portion of the metal wire 122. It can be seen that the patterned photoresist layer 130 of the first region 130a can be used to define the contact window 140a. Therefore, in addition to the patterned photoresist layer 130, the patterned photoresist layer 130 of the first region 130a left after thinning can be used to define the contact window 140a in the insulating layer 140. In summary, the structure of the metal wire 122 and the insulating layer 140 can be formed by a gray scale mask and a lift-off method.

接著,形成圖案化透明導電層150於接觸窗140a中及絕緣層140上,如第2E圖所示。因此,可藉由接觸窗140a讓金屬導線122及圖案化透明導電層150接觸而可電性連接。圖案化透明導電層150可含有氧化銦錫。舉例來說,可先使用物理氣相沈積法或化學氣相沈積法來製作一層透明導電層。然後,以一道光罩來定義透明導電層的圖案,再進行微影蝕刻製程來形成圖案化透明導電層150。例如可形成如第1圖繪示之圖案化透明導電層150。各個透明導電層區塊可用狹縫150a來區隔。Next, a patterned transparent conductive layer 150 is formed in the contact window 140a and on the insulating layer 140 as shown in FIG. 2E. Therefore, the metal wires 122 and the patterned transparent conductive layer 150 can be electrically connected by contacting the contact window 140a. The patterned transparent conductive layer 150 may contain indium tin oxide. For example, a transparent conductive layer can be formed by physical vapor deposition or chemical vapor deposition. Then, a pattern of the transparent conductive layer is defined by a mask, and then a lithography process is performed to form the patterned transparent conductive layer 150. For example, the patterned transparent conductive layer 150 as shown in FIG. 1 can be formed. Each of the transparent conductive layer blocks may be separated by a slit 150a.

然後,形成保護層160於圖案化透明導電層150上,如第2F圖所示。在形成保護層160之後,即形成第1圖繪示之觸控面板。保護層160的材質可為氧化矽。例如可使用化學氣相沈積法先形成一層保護層160。然後,以一道光罩來定義保護層160的圖案,再進行微影蝕刻製程來形成圖案化的保護層160。此外,圖案化的保護層160中可具有開口160a,而露出一部分的圖案化透明導電層150。露出的圖案化透明導電層150可用以連接其他電子元件,或用以測試觸控面板的電性特性。Then, a protective layer 160 is formed on the patterned transparent conductive layer 150 as shown in FIG. 2F. After the protective layer 160 is formed, the touch panel shown in FIG. 1 is formed. The material of the protective layer 160 may be ruthenium oxide. For example, a protective layer 160 may be formed first by chemical vapor deposition. Then, the pattern of the protective layer 160 is defined by a mask, and then a photolithography process is performed to form the patterned protective layer 160. In addition, the patterned protective layer 160 may have an opening 160a to expose a portion of the patterned transparent conductive layer 150. The exposed patterned transparent conductive layer 150 can be used to connect other electronic components or to test the electrical characteristics of the touch panel.

由上述可知,可利用一道灰階光罩及剝離法來製作金屬導線及絕緣層的結構。然後,再以兩道光罩及相關製程來分別形成圖案化透明導電層及保護層,而可完成觸控面板的製作。因此,本製造方法可利用三道光罩製程來製作觸控面板,而可縮短製程時間及減少生產成本。As can be seen from the above, the structure of the metal wires and the insulating layer can be formed by a gray scale mask and a lift-off method. Then, the patterned transparent conductive layer and the protective layer are respectively formed by two masks and related processes, and the touch panel can be completed. Therefore, the manufacturing method can manufacture a touch panel by using three mask processes, which can shorten the processing time and reduce the production cost.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

110...基板110. . . Substrate

120...金屬層120. . . Metal layer

122...金屬導線122. . . Metal wire

130...圖案化光阻層130. . . Patterned photoresist layer

130a...第一區130a. . . First district

130b...第二區130b. . . Second district

140...絕緣層140. . . Insulation

140a...接觸窗140a. . . Contact window

150...圖案化透明導電層150. . . Patterned transparent conductive layer

150a...狹縫150a. . . Slit

160...保護層160. . . The protective layer

160a...開口160a. . . Opening

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.

第1圖係繪示依照本發明一實施方式的觸控面板之俯視示意圖。FIG. 1 is a schematic top plan view of a touch panel according to an embodiment of the invention.

第2A-2F圖係繪示依照本發明一實施方式的觸控面板之製造方法的各製程階段剖面示意圖。2A-2F are schematic cross-sectional views showing respective process stages of a method of manufacturing a touch panel according to an embodiment of the present invention.

110...基板110. . . Substrate

122...金屬導線122. . . Metal wire

140...絕緣層140. . . Insulation

150...圖案化透明導電層150. . . Patterned transparent conductive layer

160...保護層160. . . The protective layer

160a...開口160a. . . Opening

Claims (10)

一種觸控面板之製造方法,包含:形成一金屬層於一基板上;形成一圖案化光阻層於該金屬層上,並露出一部分該金屬層,其中該圖案化光阻層具有一第一區及一第二區,且該第一區之圖案化光阻層之一厚度大於該第二區之圖案化光阻層之一厚度;移除該露出部分之金屬層,以形成一金屬導線並露出一部分該基板;薄化該圖案化光阻層,以移除該第二區之圖案化光阻層,使其下方之該金屬導線露出;形成一絕緣層於該露出之金屬導線、該露出部分之基板及該第一區之圖案化光阻層上;移除該第一區之該圖案化光阻層及位於其上之該絕緣層,以於該絕緣層中形成一接觸窗;形成一圖案化透明導電層於該接觸窗中及該絕緣層上;以及形成一保護層於該圖案化透明導電層上。A method for manufacturing a touch panel, comprising: forming a metal layer on a substrate; forming a patterned photoresist layer on the metal layer, and exposing a portion of the metal layer, wherein the patterned photoresist layer has a first a region and a second region, wherein a thickness of one of the patterned photoresist layers of the first region is greater than a thickness of the patterned photoresist layer of the second region; removing the metal layer of the exposed portion to form a metal wire And exposing a portion of the substrate; thinning the patterned photoresist layer to remove the patterned photoresist layer of the second region to expose the metal wire underneath; forming an insulating layer on the exposed metal wire, Exposing a portion of the substrate and the patterned photoresist layer of the first region; removing the patterned photoresist layer of the first region and the insulating layer thereon to form a contact window in the insulating layer; Forming a patterned transparent conductive layer in the contact window and the insulating layer; and forming a protective layer on the patterned transparent conductive layer. 如請求項1所述之方法,其中形成該圖案化光阻層步驟包含使用一灰階光罩。The method of claim 1, wherein the step of forming the patterned photoresist layer comprises using a gray scale mask. 如請求項1所述之方法,其中該圖案化光阻層用以定義該金屬導線。The method of claim 1, wherein the patterned photoresist layer is used to define the metal wire. 如請求項1所述之方法,其中該第一區之該圖案化光阻層用以定義該接觸窗。The method of claim 1, wherein the patterned photoresist layer of the first region is used to define the contact window. 如請求項1所述之方法,其中薄化該圖案化光阻層後,該第一區之圖案化光阻層之一厚度大於該絕緣層之一厚度。The method of claim 1, wherein after thinning the patterned photoresist layer, one of the patterned photoresist layers of the first region has a thickness greater than a thickness of the insulating layer. 如請求項5所述之方法,其中該第一區之圖案化光阻層之該厚度對該絕緣層之該厚度之比為約3:1至5:1。The method of claim 5, wherein the ratio of the thickness of the patterned photoresist layer of the first region to the thickness of the insulating layer is about 3:1 to 5:1. 如請求項1所述之方法,其中移除該第一區之該圖案化光阻層及位於其上之該絕緣層步驟包含使用一溶液溶解該第一區之該圖案化光阻層。The method of claim 1, wherein the step of removing the patterned photoresist layer of the first region and the insulating layer thereon comprises dissolving the patterned photoresist layer of the first region using a solution. 如請求項1所述之方法,其中該透明導電層包含氧化銦錫。The method of claim 1, wherein the transparent conductive layer comprises indium tin oxide. 如請求項1所述之方法,其中薄化該圖案化光阻層包含以氧氣電漿處理該圖案化光阻層。The method of claim 1, wherein thinning the patterned photoresist layer comprises treating the patterned photoresist layer with oxygen plasma. 如請求項1所述之方法,其中形成該保護層包含於該保護層形成一開口,以露出該圖案化透明導電層。The method of claim 1, wherein forming the protective layer comprises forming an opening in the protective layer to expose the patterned transparent conductive layer.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485598B (en) * 2013-07-02 2015-05-21 Au Optronics Corp Touch panel and method for manufacturing the same
TWI512582B (en) * 2013-08-30 2015-12-11 Au Optronics Corp Touch panel and touch display panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485598B (en) * 2013-07-02 2015-05-21 Au Optronics Corp Touch panel and method for manufacturing the same
TWI512582B (en) * 2013-08-30 2015-12-11 Au Optronics Corp Touch panel and touch display panel

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