TW201316473A - Combination of bypass diode and wire apparatus - Google Patents
Combination of bypass diode and wire apparatus Download PDFInfo
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Abstract
Description
本發明係一種裝置結構，尤指一種整合旁路二極體與導線之裝置。
The invention relates to a device structure, in particular to a device for integrating a bypass diode and a wire.
隨著工業的快速發展，石化燃料逐步耗竭與溫室效應氣體排放問題日益受到全球關切，能源的穩定供應已成為全球性的重大課題。相較於傳統的燃煤、燃天然氣或是核能發電，太陽能電池（solar cell）並非消耗非再生資源，而係利用光電效應直接將太陽能轉換為電能，因而不會伴隨產生二氧化碳、氮氧化物以及硫氧化物等溫室效應氣體及污染性氣體，並可減少對石化燃料的依賴而提供安全自主的電力來源。
且太陽能於再生能源發電系統中，除了具有環保與易於安裝等優點之外，再加上商品化技術的成熟與國家計畫性的輔助推動，現已成為先進國家發展分散式電源系統的主要選擇。
然而，太陽能電池的技術仍然存在諸多需要改進以提升其穩定性、壽命，或是降低成本的地方。由於太陽能電池模組是由許多太陽能電池所組成，當單一或少數電池因為老化、損壞或被樹葉、積雪所遮蔽，或是某一部份的電池模組因為地形或為配合建築物的外牆結構，必須和其他模組有不同的方向而發生部份遮蔽的情形時，該些得不到光照之部分將產生熱斑效應而有熱受損，這種效應能嚴重的破壞太陽電池，且有光照的太陽電池所産生的部分能量，都可能被遮蔽的電池所消耗。對於此種情況，現今係採用在太陽能電池組件輸出端的兩極並聯旁路二極體做為因應。
旁路二極體的功能在於當太陽能電池出現熱斑效應而不能發電時，它可以起旁路作用，讓其它太陽能電池所産生的電流從旁路二極體流出，促使太陽能發電系統能繼續發電，而不會因爲某一片太陽能電池出現問題而産生發電電路不通的情況。
而觀其所佈置的結構，於先前技術的太陽能電池模組中，旁路二極體與太陽能電池皆位於基板之上，透過金屬導電層而為連通電路，而導線則焊接於金屬導電層上，使導線可以將太陽能電池模組之電流輸出，形成一完整的通路。
然而，這種結構將會占用較大的面積，因為除了太陽能電池與旁路二極體之外，還須額外保留一區域作為導線焊接區，迫使太陽能發電系統業者必須採用較大的基板；換句話說，該較大的基板有一部分只有承載焊接上導線的功用，而對發電並沒有什麼太大的功效。請參考第一圖，於第一圖中，旁路二極體30一方面透過與第一金屬導電區201之接觸面上之第一接腳301（未見於圖中），讓電流經過第一金屬導電區201後而與第一導線501流通電流；一方面透過側邊拉出之第二接腳302與第二金屬導電區202之接觸，讓電流經過第二金屬導電區202後而與第二導線502流通電流。於此架構之下，旁路二極體30必須要透過金屬導電層20，方能使電流得以抵達第一導線501或第二導線502。在太陽能發電系統中，每一小塊平面面積都是相當珍貴、理應保留於發電而用時，故設置導線焊接區無疑是一種使成本提高但無助於提升發電收益的設計。
因此，如何解決該導線焊接區所產生的浪費，即為太陽能發電領域應面對及提出解決之道的重要問題。
With the rapid development of industry, the gradual depletion of fossil fuels and greenhouse gas emissions are increasingly receiving global concerns, and the stable supply of energy has become a major global issue. Compared with traditional coal-fired, natural gas-fired or nuclear power generation, solar cells do not consume non-renewable resources, but use photoelectric effect to directly convert solar energy into electrical energy, so they are not accompanied by carbon dioxide and nitrogen oxides. Greenhouse gases such as sulfur oxides and polluting gases, and can reduce the dependence on fossil fuels to provide a safe and autonomous source of electricity.
In addition to the advantages of environmental protection and easy installation, solar energy in renewable energy power generation system, together with the maturity of commercialization technology and the promotion of national planning, has become the main choice for developing advanced power systems in advanced countries. .
However, solar cell technology still has a number of areas that need to be improved to improve its stability, longevity, or cost. Since the solar cell module is composed of many solar cells, when a single or a small number of batteries are aging, damaged, or covered by leaves, snow, or a part of the battery module because of the terrain or the outer wall of the building. When the structure must be partially shielded from other modules in different directions, the part that is not illuminated will have a hot spot effect and heat damage, which can seriously damage the solar cell, and Part of the energy generated by a solar cell with light may be consumed by the obscured battery. In this case, the two-pole parallel bypass diode at the output of the solar cell module is now used as a response.
The function of the bypass diode is that when the solar cell has a hot spot effect and cannot generate electricity, it can act as a bypass to allow the current generated by other solar cells to flow out of the bypass diode, prompting the solar power system to continue generating electricity. , and there will be no power generation circuit failure due to a problem with a certain solar cell.
In the prior art solar cell module, the bypass diode and the solar cell are all located on the substrate, and the metal conductive layer is connected to the circuit, and the wire is soldered to the metal conductive layer. So that the wire can output the current of the solar cell module to form a complete path.
However, this structure will occupy a large area, because in addition to the solar cell and the bypass diode, an additional area must be reserved as a wire bonding area, forcing the solar power system to use a larger substrate; In other words, a part of the larger substrate only has the function of carrying the wire on the welding, and does not have much effect on power generation. Referring to the first figure, in the first figure, the bypass diode 30 passes through the first pin 301 (not shown) on the contact surface with the first metal conductive region 201, and allows the current to pass through the first The metal conductive region 201 is followed by a current flowing through the first wire 501; on the one hand, the second pin 302 pulled out through the side contacts the second metal conductive region 202, and the current is passed through the second metal conductive region 202. The two wires 502 flow current. Under this architecture, the bypass diode 30 must pass through the metal conductive layer 20 to allow current to reach the first conductor 501 or the second conductor 502. In the solar power generation system, each small piece of plane area is quite precious and should be retained for power generation. Therefore, setting the wire bonding area is undoubtedly a design that increases the cost but does not help to increase the power generation revenue.
Therefore, how to solve the waste generated by the wire bonding area is an important problem that should be faced and proposed in the field of solar power generation.
本發明之主要目的，係提供一種結合旁路二極體與導線裝置，其係具有可供旁路二極體與導線直接連接之導電件，使得單一太陽能電池所需之陶瓷基板的面積可以大幅縮小，降低生產成本。
本發明之次要目的，係提供一種結合旁路二極體與導線裝置，其係具有可供導線嵌入之導電件，使導線得以藉由嵌入而與整體架構穩定連接。
為了達到上述之目的，本發明係揭示一種結合旁路二極體與導線裝置，其係包含：一基板；一金屬導電層，係設於該基板之上，其具有一第一金屬導電區、一第二金屬導電區及一絕緣區，該絕緣區分隔該第一金屬導電區與該第二金屬導電區；一旁路二極體，係設於該金屬導電層之上方；一第一導電件，係與該旁路二極體之一第一接腳疊合於該第一金屬導電區；及一第二導電件，係與該旁路二極體之一第二接腳疊合於該第二金屬導電區。
The main object of the present invention is to provide a combination of a bypass diode and a wire device having a conductive member for directly connecting the bypass diode and the wire, so that the area of the ceramic substrate required for a single solar cell can be greatly increased. Reduce and reduce production costs.
A secondary object of the present invention is to provide a combination of a bypass diode and a wire arrangement having conductive members for embedding the wires so that the wires can be stably connected to the overall structure by embedding.
In order to achieve the above object, the present invention discloses a combined bypass diode and wire device, comprising: a substrate; a metal conductive layer disposed on the substrate, having a first metal conductive region, a second metal conductive region and an insulating region, the insulating region separating the first metal conductive region and the second metal conductive region; a bypass diode disposed above the metal conductive layer; a first conductive member And a first pin of the bypass diode is overlapped with the first metal conductive region; and a second conductive member is overlapped with the second pin of the bypass diode a second metal conductive region.
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：
於先前技術之該些太陽能電池模組結構，由於其結構上須額外保留一導線焊接區，因此迫使所採用的基板面積無法縮小，使成本無法降低，故本發明針對此缺點，設計此一結合旁路二極體與導線裝置，可以減少基板面積，進而降低成本。
首先，請參考第二圖，本發明之結合旁路二極體與導線裝置，其係包含一基板10；一金屬導電層20；一第一金屬導電區201；一第二金屬導電區202；一絕緣區203；一旁路二極體30；一第一接腳301（未見於圖中）；一第二接腳302（未見於圖中）；一第一導電件401；及一第二導電件402。
其中，該金屬導電層20係設於該基板10之上，且該金屬導電層20可分為兩個可導電之該第一金屬導電區201及該第二金屬導電區202，並還包含該絕緣區203，其中，該絕緣區203分隔該第一金屬導電區201與該第二金屬導電區202使之不會相互導通電流；該旁路二極體30係設於該金屬導電層20之上方；該第一導電件401係與該旁路二極體30之該第一接腳301疊合於該第一金屬導電區201；而該第二導電件402則係與該旁路二極體30之該第二接腳302疊合於該第二金屬導電區202。惟受限於視角，該第一接腳301與該第二接腳302待於第三圖方顯示。
除了上述元件之外，再請參考第二圖，本發明之結合旁路二極體與導線裝置更進一步包含至少一太陽能電池60及複數個金屬導線601；一第一導線501及一第二導線502；其中，該太陽能電池60係設於該第一金屬導電區201之上方，透過該太陽能電池60本身之電極（未見於圖中）與該第一金屬導電區201電性連接；而該些金屬導線601則係電性連接該太陽能電池60及該第二金屬導電區202，使兩者得以藉由該金屬導線601而為流通電路。至於該第一導線501，其係與該第一導電件401相連接，可將該第一導電件401之電流與遠端導通；該第二導線502則與該第二導電件402相連接，可將該第二導電件401之電流與遠端導通。
本發明之關鍵技術特徵在於第一導電件401與第二導電件402可直接讓電流導入或導出旁路二極體30，而不需再透過金屬導電層20為導電媒介。
請一併對照第一圖與第二圖，第一圖係為太陽能電池模組之先前技術結構。在此，透過第一圖與第二圖的比較，應可了解旁路二極體30與第一導線501及第二導線502的連結關係上，本發明相對於先前技術有了相當大的變化。
再請參考第三圖，應可更清楚地了解本發明將旁路二極體30、第一導電件401及第二導電件402的關係。特別是除前述連結關係之外，第一導電件401係與旁路二極體30之下方之第一接腳301做連接，再延伸繞過旁路二極體30之本體後，凹曲至旁路二極體30之上方；而第二導電件402則係與旁路二極體30之下方之第二接腳302做連接，再延伸繞過旁路二極體30之本體後，凹曲至旁路二極體30之上方；其中，第一導電件401與第二導電件402延伸之方向為相對應旁路二極體30之兩側。
透過第三圖之側視的角度可清楚得知，此時第一導電件401可直接與第一導線501接觸，而不需再得透過第一金屬導電區201才能與第一導線501間接接觸；相同地，第二導電件402也可以直接與第二導線502接觸，也不需再得透過第二金屬導電區202才能與第二導線502間接接觸。
在此設計之下，所需基板的面積可以大幅減少。現今太陽能電池模組所採用之基板為陶瓷基板，一片四吋陶瓷板材為面積大小為110公厘×110公厘，而現有單一陶瓷基板尺寸長寬為25公厘×15公厘，可製成28片陶瓷基板；但若採用本發明之結合旁路二極體與導線裝置，陶瓷基板可縮小為19公厘×15公厘，一片四吋陶瓷板材可製成35片陶瓷基板，增加了四分之一的數量，可顯著地降低生產成本。
再者，第一導電件401、第二導電件402、第一導線501及第二導線502除了前述之連結關係之外，也可大幅延伸第一導電件401或第二導電件402之長度，使之在一定距離之內可以和外界元件導通連接，而不必另行打設第一導線501或第二導線502。
而除了透過接觸而為之電性連接之外，第一導電件401和第二導電件402亦可設計為具有嵌入之結構，使導線得以透過嵌入之方式，進一步強化兩者連結時的穩固力量，確保此結構為在應用上具有優異的穩定性。
對於此嵌入之結構，請參考第四圖；本發明中的旁路二極體30及相關結構元件中，於第一導電件401處具有一第一嵌入口4011，於第二導電件402處具有一第二嵌入口4021；其中，第一嵌入口4011及第二嵌入口4021皆為透過調整第一導電件401與第二導電件402之外形，使之具有可供導線嵌入的凹缺槽，為一夾式嵌入設計，而其夾口大小正好與導線能配合，故能具有提升穩定性的效果。正如第四圖所示，第一導線501順利進入第一導電件401的第一嵌入口4011，並藉由第一嵌入口4011與第一導線501的大小符合，使第一導線501不易脫離而與第一導電件401穩定接觸，讓電流得以導通；而相同地，第二導線502也順利進入第二導電件402的第二嵌入口4021，並藉由第二嵌入口4021與第二導線502的大小符合，使第二導線502不易脫離而與第二導電件402穩定接觸，讓電流得以導通。
再請參考第五圖，其亦為第一導電件401與第二導電件402上的嵌入式設計的一種，此時第一嵌入口4011及第二嵌入口4021可緊密封住所有插入之導線，此插式嵌入具有前述第四圖中的夾式嵌入具有更穩固之嵌入功效，故其當然地亦提供優異的穩定接觸效果。
透過此結合旁路二極體與導線裝置，太陽能電池60所產生之電流，透過其所本身所具備的電極與該些金屬導線601，得以正常經由金屬導電層20、旁路二極體30而從導線流動出；而即便是在熱斑效應發生時，旁路二極體30也可發揮功能、穩定維持太陽能電池模組的迴路順暢。除了以上這基本功能之外，由於第一導電件401與第二導電件402讓旁路二極體30能與導線做整合，故所使用的基板面積可大幅減少，因此只需較少的平均成本就可以生產，有非常高的商業價值存在。
惟以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
本發明係實為一具有新穎性、進步性及可供產業利用者，應符合我國專利法所規定之專利申請要件無疑，爰依法提出發明專利申請，祈 鈞局早日賜准專利，至感為禱。
In order to provide a better understanding and understanding of the features of the present invention and the efficacies achieved, the preferred embodiments and detailed descriptions are provided as follows:
In the solar cell module structure of the prior art, since a wire bonding area is additionally required in the structure, the substrate area used is forced to be reduced, and the cost cannot be reduced. Therefore, the present invention addresses this disadvantage and designs the combination. Bypassing the diode and the wire arrangement can reduce the substrate area and thus the cost.
First, please refer to the second figure, the combined bypass diode and wire device of the present invention comprises a substrate 10; a metal conductive layer 20; a first metal conductive region 201; a second metal conductive region 202; An insulating region 203; a bypass diode 30; a first pin 301 (not shown); a second pin 302 (not shown); a first conductive member 401; and a second conductive Item 402.
The metal conductive layer 20 is disposed on the substrate 10, and the metal conductive layer 20 can be divided into two conductive conductive first metal conductive regions 201 and the second metal conductive region 202, and further includes the metal conductive layer 20 The insulating region 203, wherein the insulating region 203 separates the first metal conductive region 201 from the second metal conductive region 202 so as not to conduct current with each other; the bypass diode 30 is disposed on the metal conductive layer 20 The first conductive member 401 is overlapped with the first pin 301 of the bypass diode 30 in the first metal conductive region 201; and the second conductive member 402 is connected to the bypass diode The second pin 302 of the body 30 is superposed on the second metal conductive region 202. However, the first pin 301 and the second pin 302 are displayed in the third figure.
In addition to the above components, please refer to the second figure. The combined bypass diode and the wire device of the present invention further comprise at least one solar cell 60 and a plurality of metal wires 601; a first wire 501 and a second wire. 502; wherein the solar cell 60 is disposed above the first metal conductive region 201, and is electrically connected to the first metal conductive region 201 through an electrode (not shown) of the solar cell 60 itself; The metal wire 601 is electrically connected to the solar cell 60 and the second metal conductive region 202 so that the two can be used as a flow circuit by the metal wire 601. The first wire 501 is connected to the first conductive member 401, and the current of the first conductive member 401 is electrically connected to the distal end; and the second wire 502 is connected to the second conductive member 402. The current of the second conductive member 401 can be electrically connected to the distal end.
The key technical feature of the present invention is that the first conductive member 401 and the second conductive member 402 can directly conduct current or lead out of the bypass diode 30 without passing through the metal conductive layer 20 as a conductive medium.
Please refer to the first figure and the second figure together. The first figure is the prior art structure of the solar cell module. Here, by comparing the first figure with the second figure, the connection relationship between the bypass diode 30 and the first wire 501 and the second wire 502 should be known, and the present invention has undergone considerable changes with respect to the prior art. .
Referring to the third figure, the relationship between the bypass diode 30, the first conductive member 401 and the second conductive member 402 will be more clearly understood. In particular, in addition to the foregoing connection relationship, the first conductive member 401 is connected to the first pin 301 below the bypass diode 30, and then extends around the body of the bypass diode 30 to be concavely curved. The second conductive member 402 is connected to the second pin 302 below the bypass diode 30, and then extends around the body of the bypass diode 30. The second conductive member 401 and the second conductive member 402 extend in a direction corresponding to the two sides of the bypass diode 30.
It can be clearly seen from the angle of the side view of the third figure that the first conductive member 401 can be directly in contact with the first wire 501 without passing through the first metal conductive region 201 to be in indirect contact with the first wire 501. Similarly, the second conductive member 402 can also directly contact the second wire 502, and does not need to pass through the second metal conductive region 202 to be in indirect contact with the second wire 502.
Under this design, the area of the required substrate can be greatly reduced. The substrate used in today's solar cell modules is a ceramic substrate, and a four-ceramic ceramic plate has an area of 110 mm × 110 mm, and the existing single ceramic substrate has a length and width of 25 mm × 15 mm. 28 ceramic substrates; however, if the combined bypass diode and wire arrangement of the present invention is used, the ceramic substrate can be reduced to 19 mm × 15 mm, and a four-turn ceramic plate can be made into 35 ceramic substrates, adding four The number of ones can significantly reduce production costs.
Furthermore, the first conductive member 401, the second conductive member 402, the first conductive line 501 and the second conductive member 502 can extend the length of the first conductive member 401 or the second conductive member 402 substantially in addition to the aforementioned connection relationship. It is possible to make a conductive connection with an external component within a certain distance without separately designing the first wire 501 or the second wire 502.
In addition to the electrical connection through the contact, the first conductive member 401 and the second conductive member 402 can also be designed to have an embedded structure, so that the wires can be embedded and further strengthened the solid strength when the two are connected. To ensure that this structure has excellent stability in application.
For the structure of the embedded structure, please refer to the fourth figure. In the bypass diode 30 and related structural components of the present invention, a first embedded opening 4011 is formed at the first conductive member 401 at the second conductive member 402. The first insertion opening 4011 and the second insertion opening 4021 are configured to adjust the shape of the first conductive member 401 and the second conductive member 402 to have a recessed groove for the wire to be embedded. It is a clip-on embedding design, and its collet size is exactly matched with the wire, so it can improve the stability. As shown in the fourth figure, the first wire 501 smoothly enters the first insertion opening 4011 of the first conductive member 401, and the first insertion hole 4011 conforms to the size of the first wire 501, so that the first wire 501 is not easily detached. Stable contact with the first conductive member 401 to allow current to be turned on; and similarly, the second wire 502 also smoothly enters the second embedded port 4021 of the second conductive member 402, and through the second embedded port 4021 and the second conductive line 502 The size is such that the second wire 502 is not easily detached and is in stable contact with the second conductive member 402 to allow current to be conducted.
Referring to FIG. 5 again, it is also a kind of embedded design on the first conductive member 401 and the second conductive member 402. At this time, the first insertion opening 4011 and the second insertion opening 4021 can tightly seal all the inserted wires. This plug-in embedding with the clip-on embedding in the aforementioned fourth figure has a more robust embedding effect, so it of course also provides an excellent stable contact effect.
Through the combination of the bypass diode and the wire arrangement, the current generated by the solar cell 60 can pass through the metal conductive layer 20 and the bypass diode 30 through the electrode and the metal wire 601 provided by the solar cell 60. The wire flows out from the wire; and even when the hot spot effect occurs, the bypass diode 30 functions to stably maintain the smooth circuit of the solar cell module. In addition to the above basic functions, since the first conductive member 401 and the second conductive member 402 allow the bypass diode 30 to be integrated with the wires, the substrate area used can be greatly reduced, so that less average is required. Cost can be produced and there is a very high commercial value.
The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the variations, modifications, and modifications of the shapes, structures, features, and spirits described in the claims of the present invention. All should be included in the scope of the patent application of the present invention.
The invention is a novelty, progressive and available for industrial use, and should meet the requirements of the patent application stipulated in the Patent Law of China, and the invention patent application is filed according to law, and the prayer bureau will grant the patent as soon as possible. prayer.
10．．．基板10. . . Substrate
20．．．金屬導電層20. . . Metal conductive layer
201．．．第一金屬導電區201. . . First metal conduction zone
202．．．第二金屬導電區202. . . Second metal conduction zone
203．．．絕緣區203. . . Insulating area
30．．．旁路二極體30. . . Bypass diode
301．．．第一接腳301. . . First pin
302．．．第二接腳302. . . Second pin
401．．．第一導電件401. . . First conductive member
4011．．．第一嵌入口4011. . . First insertion port
402．．．第二導電件402. . . Second conductive member
4021．．．第二嵌入口4021. . . Second insertion port
501．．．第一導線501. . . First wire
502．．．第二導線502. . . Second wire
60．．．太陽能電池60. . . Solar battery
601．．．金屬導線601. . . Metal wire
第一圖：其係為先前技術之結構示意圖；
第二圖：其係為本發明之一較佳實施例之結構示意圖；
第三圖：其係為本發明之一較佳實施例之側視圖；
第四圖：其係為本發明之一較佳實施例之部分結構示意圖；及
第五圖：其係為本發明之一較佳實施例之部分結構示意圖。
First picture: it is a schematic diagram of the prior art;
Second: it is a schematic structural view of a preferred embodiment of the present invention;
Third drawing: a side view of a preferred embodiment of the invention;
Figure 4 is a partial structural view of a preferred embodiment of the present invention; and a fifth drawing: a partial structural view of a preferred embodiment of the present invention.
10．．．基板10. . . Substrate
20．．．金屬導電層20. . . Metal conductive layer
201．．．第一金屬導電區201. . . First metal conduction zone
202．．．第二金屬導電區202. . . Second metal conduction zone
203．．．絕緣區203. . . Insulating area
30．．．旁路二極體30. . . Bypass diode
401．．．第一導電件401. . . First conductive member
402．．．第二導電件402. . . Second conductive member
501．．．第一導線501. . . First wire
502．．．第二導線502. . . Second wire
60．．．太陽能電池60. . . Solar battery
601．．．金屬導線601. . . Metal wire
Claims (8)
一基板；
一金屬導電層，係設於該基板之上，其具有一第一金屬導電區、一第二金屬導電區及一絕緣區，該絕緣區分隔該第一金屬導電區與該第二金屬導電區；
一旁路二極體，係設於該金屬導電層之上方；
一第一導電件，係與該旁路二極體之一第一接腳疊合於該第一金屬導電區；及
一第二導電件，係與該旁路二極體之一第二接腳疊合於該第二金屬導電區。A combination of a bypass diode and a wire device, the system comprising:
a substrate;
a metal conductive layer is disposed on the substrate, and has a first metal conductive region, a second metal conductive region and an insulating region, the insulating region separating the first metal conductive region and the second metal conductive region ;
a bypass diode disposed above the metal conductive layer;
a first conductive member is overlapped with the first metal of the bypass diode in the first metal conductive region; and a second conductive member is connected to the second of the bypass diode The foot is superposed on the second metal conductive region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100137058A TW201316473A (en) | 2011-10-12 | 2011-10-12 | Combination of bypass diode and wire apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100137058A TW201316473A (en) | 2011-10-12 | 2011-10-12 | Combination of bypass diode and wire apparatus |
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| TW201316473A true TW201316473A (en) | 2013-04-16 |
| TWI420642B TWI420642B (en) | 2013-12-21 |
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| TWI227552B (en) * | 2003-06-17 | 2005-02-01 | Advanced Semiconductor Eng | Stacked chip package structure |
| TWI226684B (en) * | 2004-02-10 | 2005-01-11 | Stack Devices Corp | Stacked type semiconductor encapsulation device having protection mask |
| KR100891516B1 (en) * | 2006-08-31 | 2009-04-06 | 주식회사 하이닉스반도체 | Stackable fbga type semiconductor package and stack package using the same |
| TWM343921U (en) * | 2008-05-29 | 2008-11-01 | Iner Aec Executive Yuan | Concentration photovoltaic apparatus |
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