TW201310535A - Layered interconnection film for electronic device, and sputtering target for forming a covering layer - Google Patents

Abstract

A layered interconnection film for an electronic device using a covering layer containing a Mo alloy and a sputtering target for forming a covering layer are provided. The covering layer containing the Mo alloy improves moisture resistance or oxidation resistance, and when the covering layer laminates with Cu which is a main conductive layer having low resistance, the lower resistance can still be maintained even under a heating process. The layered interconnection film, in which a metal film is formed on a substrate, for the electronic device includes the main conductive layer in which Cu is a main component and the covering layer which covers one surface and/or another surface of the main conductive layer. The covering layer is represented by a composition formula in an atomic ratio of Mo100-x-y-Nix-Tiy, 10 ≤ x ≤ 50, 3 ≤ y ≤ 30, x+y ≤ 53, and the rest of components contain inevitable impurities.

Description

Multilayer wiring film for electronic parts and sputtering target forming sputtering target

The present invention relates to a laminated wiring film for an electronic component which is required to have moisture resistance and oxidation resistance, and a coating layer for forming a coating layer for forming one surface and/or the other surface of the main conductive layer covering the laminated wiring film. Plating target.

A planar representation of an electrophoretic display used in a liquid crystal display (hereinafter referred to as LCD), a plasma display panel (hereinafter referred to as PDP), an electronic paper, or the like which forms a thin film device on a glass substrate In addition to devices (Flat Panel Display, hereinafter referred to as FPD), wiring films of lower resistance are required in thin film electronic parts such as various semiconductor devices, thin film sensors, and magnetic heads. For example, an FPD such as an LCD, a PDP, or an organic electroluminescence display requires a large screen, a high definition, and a high-speed response, and the wiring film is required to have a low resistance. Further, in recent years, new products such as a touch panel that adds operability to an FPD or a flexible FPD that uses a resin substrate have been developed.

In recent years, a wiring film of a thin film transistor (TFT) which can be used as a driving element of an FPD has to be reduced in resistance, and thus a main wiring material has been studied, and Cu from Al to a lower resistance has been used. In addition, the touch panel substrate screen that can directly manipulate the screen while viewing the FPD screen is also becoming larger. Progress in the use of Cu for main wiring materials for low resistance has been progressing.

At present, TFT is a Si semiconductor film, and if Cu is in direct contact with Si, Then, thermal diffusion occurs due to the heating step in the TFT manufacturing, and the characteristics of the TFT are deteriorated. Therefore, a laminated wiring film in which Mo or a Mo alloy is used as a barrier film, which is excellent in heat resistance, is used between Cu and Si.

In addition, in the case of a pixel electrode, a position detecting electrode of a touch panel used in a portable terminal, a tablet personal computer, or the like, indium tin oxide (Indium Tin Oxide) is generally used. Called ITO). Although Cu can obtain contact with ITO, the adhesion to the substrate is low. Therefore, in order to ensure adhesion, it is necessary to form a laminated wiring film in which Cu is coated with Mo or a Mo alloy.

Furthermore, research has been conducted on the use of amorphous Si semiconductors to the transparent semiconductor films which can realize higher-speed response oxides, and Cu and pure are also used in the wiring films for studying these oxide semiconductors. A laminated wiring film of Mo or the like.

The present applicant proposes to maintain a low resistance value of Cu or Ag by laminating Cu or Ag having low adhesion to glass or the like and Mo alloy containing Mo and V or N as main body. Corrosion resistance, heat resistance or adhesion to a substrate can be improved. (For example, refer to Patent Document 1).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-140319

The Mo-V or Mo-Nb alloy proposed in the above Patent Document 1 is more excellent in corrosion resistance, heat resistance, or adhesion to a substrate than pure Mo, and therefore can be widely used for FPD applications formed on a glass substrate. in.

However, when manufacturing the FPD, a laminated wiring film is formed on the substrate. After that, it will be placed in the atmosphere for a long time when moving to the next step. In addition, in a lightweight and soft FPD or the like which uses a resin film for the purpose of improving the convenience, the resin film is more hygroscopic than the glass substrate and the like so far, and therefore requires a higher moisture resistance for the laminated wiring film. Sex.

In addition, when the signal cable is attached to the terminal portion of the FPD or the like, it is heated in the air. Therefore, it is also required to improve the oxidation resistance of the laminated wiring film. Further, in the semiconductor film using an oxide, in order to improve characteristics or stabilize, a heat treatment may be performed at a high temperature of 350 ° C or higher in an atmosphere containing oxygen or a protective film containing oxygen. Therefore, in order to maintain stable characteristics after the heat treatment of the laminated wiring film, the demand for improvement in oxidation resistance is enhanced.

According to the study of the present inventors, since Cu has a greater deterioration in adhesion, moisture resistance, or oxidation resistance than Al, it is necessary to form a base film for ensuring adhesion and an upper film to protect Cu. The coating layer (overlying film). There are cases in which the above-mentioned Mo-V, Mo-Nb alloy, or the like, or pure Mo, is insufficient in moisture resistance or oxidation resistance, and when a coating layer of Cu is formed in the manufacturing process of the FPD, discoloration is caused, and Through the oxygen, the resistance value of Cu is greatly increased. Further, when the coating layer is discolored, the electrical contact property is deteriorated, and the reliability of the electronic component is lowered.

Further, in order to increase the screen size or high-speed driving of the FPD, the heating temperature in the TFT manufacturing step tends to increase. Therefore, in the laminated wiring film in which the barrier layer formed of the barrier film or the adhesion film is formed of Cu as the main conductive layer, the atoms constituting the coating layer are thermally diffused to Cu. It is impossible to maintain a low resistance value. Therefore, it is required to maintain a high moisture resistance or oxidation resistance and a low resistance value which can be applied to various new environments for the coating layer of the laminated wiring film having Cu as the main conductive layer.

An object of the present invention is to provide a laminated wiring film for an electronic component including a coating layer of a Mo alloy and a sputtering target for forming a coating layer, wherein the coating layer containing the Mo alloy can improve moisture resistance or oxidation resistance, and When laminating with Cu as a low-resistance main conductive layer, a lower resistance value can be maintained even after the heating step.

The present inventors have made efforts to optimize the elements newly added to Mo in view of the above problems. As a result, it has been found that by adding a specific amount of Ni and Ti in Mo, the moisture resistance and oxidation resistance can be improved, and when the coating layer of Cu as the main conductive layer is formed, even after the heating step The present invention has been completed by maintaining a low resistance value.

That is, the present invention is a laminated wiring film for an electronic component, in which a metal film is formed on a substrate, comprising: a main conductive layer containing Cu as a main component; and a coating layer covering one surface and/or the other surface of the conductive layer; The coating layer is represented by an atomic ratio composition formula of Mo _100-xy -Ni _x -Ti _y , 10 ≦ x ≦ 50, 3 ≦ y ≦ 30, and x + y ≦ 53 , and the remainder contains unavoidable impurities.

Further, in the present invention, it is more preferable that x and y of the above composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively.

Further, the present invention relates to a sputtering target for forming a coating layer, comprising a Mo alloy for forming a coating target by using a sputtering target, and having a composition ratio of atomic ratio of Mo _100-xy -Ni _{x -} Ti _y , 10 ≦ x ≦ 50, 3 ≦ y ≦ 30, x + y ≦ 53 are indicated, and the remainder contains unavoidable impurities.

Further, in the invention, it is preferable that x and y of the above composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively.

The laminated wiring film for electronic parts of the present invention can improve moisture resistance and oxidation resistance. Further, in the heating step at the time of laminating with Cu, an increase in the resistance value can be suppressed, and a low resistance value can be maintained. In this way, the wiring film for various electronic components (for example, FPD formed on a resin substrate) can greatly contribute to stable manufacturing or reliability improvement of electronic components, and becomes an electronic component. Manufacturing technology that is indispensable. In particular, it is a laminated wiring film which is very useful for a touch panel or a soft FPD using a resin substrate. The reason is: in these products, especially moisture resistance and oxidation resistance are very important.

Fig. 1 is a schematic cross-sectional view showing a laminated wiring film for an electronic component of the present invention. The multilayer wiring film for an electronic component of the present invention includes a coating layer 2 covering a surface of the main conductive layer 3 mainly composed of Cu and/or the other surface, and a coating layer 4 formed on the substrate 1, for example. In FIG. 1, although the coating layer 2 and the coating layer 4 are formed on both surfaces of the main conductive layer 3, they may cover only one surface and may be appropriately selected. Further, in the case where only one side of the main conductive layer is covered by the coating layer of the present invention, the other surface of the main conductive layer may be covered by the coating layer having a composition different from the present invention depending on the use of the electronic component.

An important feature of the present invention is to find a new Mo alloy which is improved in moisture resistance and resistance by adding a specific amount of Ni and Ti to the Mo composite layer in the coating layer of the laminated wiring film for an electronic component shown in Fig. 1 . The oxidizing property and the heating step in the lamination with the Cu film can maintain a low resistance value. Hereinafter, the laminated film for electronic parts of the present invention will be described in detail.

In the following description, the term "moisture resistance" refers to the difficulty of causing a change in the resistance value of the wiring film in a high-temperature and high-humidity environment. In addition, the term "oxidation resistance" refers to the easiness of deterioration of electrical contact properties in a high-temperature environment, and can be confirmed by discoloration of the wiring film, and can be quantitatively evaluated by, for example, reflectance.

The reason why Ni is added to the Mo alloy forming the coating layer of the build-up wiring film for an electronic component of the present invention is to improve the oxidation resistance of the coating layer. When pure Mo is heated in the atmosphere, the surface of the film is oxidized, resulting in deterioration of electrical contact. The coating layer of the laminated wiring film for an electronic component of the present invention has an effect of improving oxidation resistance and suppressing deterioration of electrical contact properties by adding a specific amount of Ni to Mo. This effect becomes remarkable when the addition amount of Ni is 10 atom% or more.

On the other hand, Ni is an element which is more thermally diffusible to Cu than Mo. When the amount of Ni added in Mo exceeds 50 atom%, in the heating step in the production of electronic components such as FPD, Ni of the coating layer is easily diffused into Cu of the main conductive layer, and it is difficult to maintain a low resistance value. . Therefore, the amount of Ni added is set to 10 atom% to 50 atom%. Further, when a coating layer is formed on Cu of the main conductive layer and heated at a high temperature higher than 350 ° C, Ni having a coating layer is easily diffused into Cu of the main conductive layer, and the resistance value is increased. Happening. In the present invention, in order to maintain a low resistance value, it is preferred to set the Ni addition amount to 30 atom% or less.

The reason why Ti is added to the Mo alloy forming the coating layer of the build-up wiring film for an electronic component of the present invention is to improve moisture resistance. Ti is a metal having a property of being easily combined with oxygen or nitrogen, and has an effect of forming a passivation film on the surface in a high-temperature and high-humidity environment to protect the inside of the wiring film. Therefore, the coating layer of the laminated wiring film for electronic parts of the present invention can greatly improve the moisture resistance by adding a specific amount of Ti to Mo. This effect becomes remarkable when the amount of Ti added is 3 atom% or more.

On the other hand, when the amount of Ti added exceeds 30 atom%, the corrosion resistance is excessively increased, and the etching rate when the etchant for Cu is used is lowered, and residue is generated during etching of the laminated film of Cu with the main conductive layer, or Etching. Therefore, in the present invention, the amount of Ti added is set to 3 atom% to 30 atom%.

Further, in order to stably obtain higher moisture resistance than the conventional Mo-Nb alloy, the amount of Ti added is preferably 9% by atom or more. Further, in order to perform more stable etching using an etchant of Cu, the amount of Ti added is preferably 20 atom% or less.

Further, in order to form a coating layer on one surface and/or the other surface of Cu as the main conductive layer, in order to cope with a high temperature of 350 ° C in the production step, the composite is added to the Mo alloy forming the coating layer. The sum of Ni and Ti is set to 53 atom% or less. The reason is that not only Ni and Ti are elements which are thermally diffused into Cu, but if the sum of Ni and Ti exceeds 53 atom%, Ni or Ti diffuses into the Cu layer of the main conductive layer, which is difficult to maintain. Hold a lower resistance value.

Further, Ni and Ti which are added to the Mo alloy forming the coating layer are preferably Ni or Ti in an atomic ratio of 1 or more. As described above, Ti is an element which is involved in an improvement in moisture resistance, but oxidation resistance is lowered. Therefore, according to studies by the present inventors, when Ti is added in an amount larger than the amount of addition of Ni, it is difficult to obtain an improvement in oxidation resistance. effect. Therefore, by separately adding the atomic ratio of Ni and Ti to 1 or more, the moisture resistance and oxidation resistance of the coating layer can be stably obtained.

In the multilayer wiring film for an electronic component of the present invention, in order to stably obtain a low resistance value, moisture resistance, or oxidation resistance, it is preferable to set the thickness of the main conductive layer to 100 nm to 1000 nm. When the film thickness of the main conductive layer is thinner than 100 nm, the resistance value is easily increased due to the influence of scattering of electrons characteristic of the film. On the other hand, when the film thickness of the main conductive layer is thicker than 1000 nm, it takes time to form a film, or warp is easily generated on the substrate due to film stress.

In addition, pure Cu in the main conductive layer containing Cu as a main component can obtain the lowest resistance value. Further, in consideration of reliability such as heat resistance and corrosion resistance, a Cu alloy in which a transition metal or a semimetal or the like is added to Cu can be used. At this time, in order to obtain a resistance value as low as possible, the addition amount of the additive element in Cu is preferably 5 atom% or less.

Further, in the laminated wiring film for an electronic component of the present invention, in order to stably obtain a low resistance value, moisture resistance, or oxidation resistance, the film thickness of the coating layer is preferably 20 nm to 100 nm. When the film thickness of the coating layer is less than 20 nm, the continuity of the Mo alloy film is lowered, and the film cannot be sufficiently obtained. The situation of the above characteristics is obtained. On the other hand, when the film thickness of the coating layer exceeds 100 nm, the electric resistance value of the coating layer becomes high, and when the Cu film of the main conductive layer is laminated, it becomes difficult to obtain a low electric resistance value in the laminated wiring film for electronic parts.

Further, in the present invention, when the atmosphere is heated at a high temperature of 350 ° C or higher, the thickness of the coating layer is preferably 30 nm or more in order to suppress an increase in the electric resistance value due to oxidation of Cu in the main conductive layer. Further, in order to suppress an increase in the resistance value due to diffusion of atoms of Cu into the main conductive layer when heated at a high temperature of 350 ° C or higher, the thickness of the coating layer is preferably 70 nm or less. Therefore, in the present invention, it is more preferable to set the film thickness of the coating layer to 30 nm to 70 nm.

In order to form each layer of the laminated wiring film for electronic parts of the present invention, a sputtering method using a sputtering target is preferred. In forming the coating layer, for example, a method of forming a film using a Mo alloy sputtering target having the same composition as that of the coating layer; or using a Mo-Ni alloy sputtering target and a Mo-Ti sputtering target A method of forming a film by co-sputtering or the like. In terms of the ease of setting the conditions of the sputtering or the coating layer having a desired composition, it is most preferable to perform sputtering using a Mo alloy sputtering target having the same composition as that of the coating layer.

Therefore, in order to form the coating layer of the laminated wiring film for an electronic component of the present invention, Mo _100-xy -Ni _x -Ti _y , 10 ≦ x ≦ 50, 3 ≦ y ≦ 30, x are used by using the atomic ratio composition formula. +y≦53 indicates that the remaining portion contains a sputtering target of unavoidable impurities, and the coating layer can be stably formed.

Further, as described above, in order to obtain a laminated wiring film for electronic parts having a low electric resistance value even in a heating step at a high temperature of 350 ° C, Preferably, Ni contains 20 atom% to 30 atom% of Ni, and contains 9 atom% to 20 atom% of Ti.

In the method for producing a sputtering target for forming a coating layer of the present invention, for example, a powder sintering method can be applied. In the powder sintering method, for example, an alloy powder can be produced by a gas atomization method to prepare a raw material powder; or a mixed powder obtained by mixing a plurality of alloy powders or pure metal powders in a manner to be the final composition of the present invention can be used as a raw material powder. . The sintering method of the raw material powder may be carried out by pressure isothermal pressing, hot pressing, spark plasma sintering, extrusion press sintering or the like.

In the Mo alloy forming the coating layer of the laminated wiring film for an electronic component of the present invention, the unavoidable impurities other than Mo occupy the remainder other than Ni and Ti which are elements necessary for ensuring oxidation resistance and moisture resistance. The content is preferably small, but may contain, as a gas component, oxygen, nitrogen or carbon, as a transition metal, Fe, Cu, semi-metal Al, Si, etc., in a range that does not impair the effects of the present invention. Avoid impurities. For example, it is preferable that oxygen and nitrogen of the gas component are each 1000 ppm by mass or less, carbon is 200 ppm by mass or less, Fe and Cu are 200 ppm by mass or less, and Al and Si are 100 ppm by mass or less, and the purity of the gas component is removed. It is calculated to be 99.9% by mass or more.

[Example 1]

The invention is illustrated in detail by the following examples.

First, a sputtering target for forming a Mo-Ni-Ti alloy film to be a coating layer was produced. Mixing a Mo powder having an average particle diameter of 6 μm, a Ni powder having an average particle diameter of 100 μm, and an average particle diameter in such a manner as to have a specific composition The Ti powder of 150 μm was filled in a can made of mild steel, and then vacuum-exhausted while heating, and the gas components in the can were removed and sealed. Next, the sealed can was placed in a hot homogenizing apparatus, and sintered at 800 ° C, 120 MPa, and 5 hours, and then a sputtering target having a diameter of 100 mm and a thickness of 5 mm was machined. Further, similar Mo, Mo-Nb, and Mo-Ni sputtering targets were produced in the same manner. Further, the Cu target was produced by cutting out an oxygen-free copper plate manufactured by Hitachi Cable Co., Ltd.

Each of the sputtering targets obtained above was welded to a copper backing plate and attached to a sputtering apparatus. The sputtering apparatus was SPF-440H manufactured by Canon An Nev.

On a glass substrate of 25 mm × 50 mm, each having a film thickness as shown in Table 1, a Mo alloy film as a coating layer to which a specific amount of Ni and Ti shown in Table 1 was added was formed by sputtering. A Cu film as a main conductive layer is formed on the upper surface of the Mo alloy film, and then a Mo alloy film is formed on the upper surface of the Cu film to obtain a laminated wiring film for an electronic component. Further, for comparison, a pure Mo, a Mo-Ni alloy film, and a Mo-Nb alloy film were laminated with a Cu film to form a laminated wiring film.

The oxidation resistance was evaluated by measuring the change in reflectance and resistance value after heating at 250 ° C and 350 ° C for 1 hour in the atmosphere. The reflectance was measured by measuring the reflection characteristics in the visible light region using a spectrophotometer CM-2500d manufactured by Konica Minolta. In addition, the resistance value was measured using a 4-terminal thin film resistivity meter MCP-T400 manufactured by DIA INSTRUMENTS Co., Ltd. The results are shown in Table 1.

As shown in Table 1, in the Cu film monomer of the main conductive layer, if it is heated at 250 ° C or higher in the atmosphere, oxidation is caused, and the reflectance is greatly lowered, and the resistance value cannot be measured. Further, the reflectance of the laminated wiring film of the Mo alloy and Cu of the comparative example tends to decrease as it is heated in the air. In particular, it was confirmed that the reflectance of the laminated wiring film of pure Mo or Mo-10 at % Nb is greatly lowered when heated at 350 ° C in the atmosphere, and the oxidation resistance is low. Further, it is considered that the resistance value can be maintained at a low value up to 250 ° C, but it is greatly increased at 350 ° C, and oxygen gas is transmitted through the coating layer to oxidize the Cu film.

Further, it was confirmed that the laminate film of Mo-35 at% Ti in the comparative example greatly reduced the reflectance at 350 ° C, and the resistance value also increased, and the oxidation resistance could not be sufficiently improved when only Ti was added.

On the other hand, in the coating layer of the present invention, the reflectance of a Mo-Ni-Ti alloy in which a specific amount of Ni and Ti is added to Mo is reduced, and even if it is heated in the atmosphere at 350 ° C, the decrease is small. And can greatly improve oxidation resistance. In addition, in the coating layer of the present invention, a specific amount of a resistance value of a Mo-Ni-Ti alloy of Ni and Ti is added to Mo, and the increase is small even when heated in an atmosphere of 350 ° C. The oxidation resistance can be greatly improved. This improvement effect is made clear by adding 20 atom% or more of Ni and 3 atom% or more of Ti, and it is confirmed that it is a laminated wiring film suitable for an electronic component.

[Example 2]

A part of the laminated wiring film produced in Example 1 was selected and placed in a high temperature and high humidity environment of 85 ° C × 85% for 50 hours, 100 hours, and 200 hours. The change in reflectance at hour and 300 hours was evaluated as moisture resistance. The results are shown in Table 2.

As shown in Table 2, it was confirmed that the laminated wiring film of pure Mo, Mo-10Nb, or Mo-Ni alloy was used for the coating layer of the comparative example, and when placed in a high-temperature and high-humidity environment, the reflectance was greatly lowered, and the electric resistance was lowered. The value increases. In particular, it is understood that when the amount of Ni added is increased in the laminated wiring film using the Mo—Ni alloy in the coating layer, the tendency becomes more remarkable and the moisture resistance is low.

On the other hand, in the coating layer of the present invention, a specific amount of the reflectance of the laminated wiring film of Ni and Ti is added to Mo, and the reflectance can be suppressed after being placed in a high-temperature and high-humidity environment, and the reflectance can be maintained. Low resistance values greatly improve moisture resistance. Further, it was confirmed that the improvement effect was remarkable when the Ti addition amount was 3 atom% or more, and the moisture resistance was greatly improved at 9 atom%.

[Example 3]

Next, a part of the laminated wiring film produced in Example 1 was selected, and the change in the resistance value when the heat treatment was performed in a vacuum was examined. The heating was carried out at a heating temperature of 250 ° C, 350 ° C, and 450 ° C for 1 hour. The measurement results are shown in Table 3.

As shown in Table 3, when the addition amount of Ni of the comparative example exceeds 50 atom%, or the addition amount of Ni or Ti exceeds 50 atom%, the higher the temperature, particularly 350 ° C or more, the more the resistance value increases.

On the other hand, in the laminated wiring film of the present invention, the total amount of Ni and Ti added to the coating layer is 50 atom% or less, and the increase in the resistance value during heating can be suppressed.

[Example 4]

Next, the evaluation of the etching property was performed. The photoresist was coated on only half of the area of the substrate on which the laminated wiring film used in Example 3 was formed, and dried, and immersed in an etchant solution for Cu manufactured by Kanto Chemical Co., Ltd., and uncoated. Partial etching. Then, the substrate was washed with pure water and dried, and the vicinity of the boundary between the dissolved portion and the undissolved portion to which the photoresist was applied was observed by an optical microscope. The results are shown in Table 3.

In the laminated wiring film of the Mo-Ni alloy and Cu of the comparative example, the film in the vicinity of the boundary floated and the end portion was peeled off. The reason for this is considered to be that the Mo alloy film of the coating layer formed between the Cu film of the main conductive layer and the glass substrate is etched. Moreover, the residue was confirmed in the laminated wiring film of Mo-10 atom% Nb in the coating layer of the comparative example. This is because the Cu film of the main conductive layer was found to be overetched, and the Mo-10 atomic % Nb alloy film of the coating layer formed on the upper portion was floated.

Further, it was confirmed that the Mo-35 atom% Ti or the Mo-10 atom% Ni-33 atom% Ti of the comparative example was used as the coating layer, and etching was impossible, and the amount of Ti added greatly interfered with the etching property.

In contrast, it can be confirmed that a specific amount of the compound is added to the Mo in the present invention. The coating layers of Ni and Ti have no film peeling and can be etched. However, in the Mo alloy in which the amount of addition of Ti is 22 atom%, the residue is confirmed on the substrate, and it is confirmed that the amount of Ti added is more preferably 20 atom% or less in order to perform etching more stably.

As described above, in order to satisfy the oxidation resistance, the moisture resistance, the suppression of the increase in the resistance value during heating, and the etching property, it is preferable to set the amount of Ni to 10 atom% to 50 atom%, and to form Ti. The amount of addition is set to 3 atom% to 30 atom%. In addition, in order to suppress oxidation resistance at a high temperature, suppress an increase in resistance value, and ensure high etching property, it is more preferable to set Ni to 20 atom% to 30 atom%, and Ti to 9 atom% to 20 atom%. .

[Example 5]

First, a Mo-20% Ni-15% Ti (atomic%) sputtering target to be a coating layer was produced. Mo powder having an average particle diameter of 6 μm, Ni powder having an average particle diameter of 80 μm, and Ti powder having an average particle diameter of 25 μm were mixed in a specific composition, and filled in a can made of mild steel, and then vacuumed while being heated. The exhaust gas removes the gas component in the tank and seals it. Next, the sealed can was placed in a hot press apparatus, and sintered at 800 ° C, 120 MPa, and 5 hours, and then a sputtering target having a diameter of 100 mm and a thickness of 5 mm was machined.

Each of the sputtering targets obtained above was welded to a copper support plate and mounted in a sputtering apparatus. The sputtering apparatus was SPF-440H manufactured by Canon An Nev.

Next, the film thickness of the Cu film as the main conductive layer and the Mo-Ni-Ti film as the coating layer was changed on a glass substrate of 25 mm × 50 mm. A build-up wiring film for an electronic component having a film thickness as shown in Table 4 was formed by a sputtering method. Then, in the same manner as in Example 1, the change in reflectance and resistance value at the time of heat treatment in the atmosphere was measured. The results are shown in Table 4.

When the film thickness of the Cu film as the main conductive layer is the same, the thinner the film thickness of the coating layer, the lower the resistance value at the time of film formation. It can be confirmed that when heated in the atmosphere, when the upper cladding layer is 10 nm and thinner, the reflectance decreases from 250 ° C, and at 350 ° C, the resistance value increases, but when the upper cladding layer is 20 nm or more, the reflectance The decrease in the resistance and the increase in the resistance value are less, and a higher oxidation resistance is obtained.

It has been confirmed that the laminated wiring film for electronic parts of the present invention can be formed by forming a Cu film as a main conductive layer of 200 nm to 500 nm thick and forming a coating layer of a coating layer of 20 nm to 70 nm thick. Resistance value and high oxidation resistance.

1‧‧‧Substrate

2, 4‧‧‧ coating

3‧‧‧Main conductive layer

Fig. 1 is a schematic cross-sectional view showing a laminated wiring film for an electronic component of the present invention.

1‧‧‧Substrate

2, 4‧‧‧ coating

3‧‧‧Main conductive layer

Claims (4)

A laminated wiring film for an electronic component, comprising a metal film formed on a substrate, comprising: a main conductive layer containing Cu as a main component; and a coating layer covering one surface and/or the other surface of the conductive layer; The layer is represented by an atomic ratio composition formula of Mo _100-xy -Ni _x -Ti _y , 10≦x≦50, 3≦y≦30, x+y≦53, and the remainder contains unavoidable impurities. The laminated wiring film for electronic parts according to the first aspect of the invention, wherein x and y of the composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively. A sputtering target for forming a coating layer, which is a sputtering target for forming a coating layer according to claim 1 of the patent application, and has an atomic ratio composition of Mo _100-xy - Ni _x -Ti _y , 10 ≦ x ≦ 50, 3 ≦ y ≦ 30, x + y ≦ 53 are shown, and the rest contain unavoidable impurities. The sputtering target for forming a coating layer according to claim 3, wherein x and y of the composition formula are 20 ≦ x ≦ 30 and 9 ≦ y ≦ 20, respectively.