TW201308806A - Electron beam excited light source device - Google Patents

Abstract

[Problem to be solved] To provide an electron beam excited light source device which is capable of efficiently irradiating one surface of a semiconductor light emitting element with electron beams from an electron beam source device, and achieving higher light output. [Solution] An electron beam source device and a semiconductor light emitting element radiating ultraviolet light when excited by electron beams radiated from the electron beam source device are disposed inside an electron beam excited light source device formed in a vacuum container. The semiconductor light emitting element is provided with a structure of an electricity removal component for removing electric charge conductivity on one surface where the electron beams are emitted from the electron beam source device.

Description

Electron beam excitation type light source device

The present invention relates to an electron beam excitation type light source device that emits an electron beam from an electron beam source device to a semiconductor light emitting element to emit light.

An electron beam excitation type light source device that emits a semiconductor light-emitting device by illuminating an electron beam is expected to be a small-sized light source that emits high-intensity ultraviolet light. For example, as disclosed in Patent Document 1, as shown in FIG. The electron beam of the electron gun 75 inside the glass valve 71 held in a high vacuum is irradiated onto the semiconductor light-emitting element 74 which is provided on the inner surface of the panel 72 and is provided with reflective layers 73a and 73b made of Al, Ag or the like on both surfaces. The semiconductor light-emitting element 74 is excited, whereby the electron beam excitation type light source device that emits ultraviolet laser light is emitted. Further, in Patent Document 2, as shown in FIG. 7, a vacuum container 80 having a light-transmissive window 81 sealed therein in a negative pressure state is disposed, and light reflection members 83 and 84 are disposed on both surfaces of the semiconductor light-emitting device 82. The laser structure 85 is disposed on the inner surface of the light transmission window 81, and on the inner surface of the bottom wall of the vacuum vessel 80, the semiconductor light emitting element 82 is irradiated with an electron beam source 86 of the electron beam to oppose the laser structure. The electron beam excitation type light source device of the radiation ultraviolet laser light is disposed in the form of the body 85.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Laid-Open Patent Publication No. 06-303625

[Patent Document 2] Japanese Patent No. 3667188

In the electron beam excitation type light source device, for example, a semiconductor light-emitting device is formed by laminating a plurality of semiconductor layers by crystal deposition on an insulating substrate, but it has been found that high-output with the electron beam excitation type light source device is known. In the case where the electrons emitted from the electron beam source are irradiated on one surface of the semiconductor light-emitting device, charges are accumulated on one surface of the semiconductor light-emitting device and the circumferential side surface on the one surface side due to collision of electrons, and charge up occurs. As a result, the electron beam from the electron beam source cannot be efficiently injected into the semiconductor light based on the change in the orbit of the electron beam emitted from the electron beam source or the electron from the electron beam member rebounding due to the surface of the semiconductor light-emitting element. One side of the component causes a problem of reduced luminous efficiency.

The present invention has been made in view of the above circumstances, and it is an object of the invention to provide an electron beam excitation type light source device which can efficiently irradiate an electron beam from an electron beam source device to one surface of a semiconductor light emitting element and obtain a high light output.

The electron beam excitation type light source device of the present invention is an electron beam source device and emits violet light by excitation by an electron beam emitted from the electron beam source device An electron beam excitation type light source device in which an external light semiconductor light emitting element is disposed inside a vacuum container, wherein the semiconductor light emitting element is provided to remove an electron beam incident from the electron beam source device A charge-removing member that is electrically conductive on one side.

In the electron beam excitation type light source device of the present invention, the semiconductor light emitting element is fixed to the vacuum container through a conductive support; The static eliminating member is preferably electrically connected to the conductive support.

According to the electron beam excitation type light source device of the present invention, the semiconductor light emitting element can be prevented or suppressed by being configured to remove the charge removing member for removing the charge of one side of the semiconductor light emitting element by the electron beam from the electron beam source device. The electron beam is irradiated from one side of the electron beam source device, and the charge is accumulated by the electron beam from the electron beam source device, so that the electron beam from the electron beam source device can be efficiently irradiated to the semiconductor light-emitting element. One side, and a higher light output can be obtained.

Hereinafter, embodiments of the present invention will be described in detail.

Fig. 1 is an explanatory view showing an outline of an example of an electron beam excitation type light source device according to the present invention, wherein (A) is a side sectional view, and (B) is revealed. FIG. 2 is a plan view schematically showing a structure of an electron beam source device of the electron beam excitation type light source device shown in FIG. 1, and an enlarged cross-sectional view taken along line A-A of FIG. 1(B). Further, in Fig. 1(B), for convenience of explanation, hatching is added to the electron beam source device.

In the electron beam excitation type light source device, the vacuum container 10 having a rectangular shape in a state of being sealed inside the negative pressure is provided, and the vacuum container 10 is opened by one side (upward in FIG. 1(A)), and A container base 11 having a through hole at a central position of the bottom wall is disposed to close the upper opening of the container base 11, and is hermetically sealed to the light transmission window 15 of the container base 11 and inserted into the bottom wall of the container base 11. The through hole is configured to be hermetically sealed to the semiconductor light emitting element holding member 18 of the container base 11.

In the vacuum vessel 10, the semiconductor light emitting element 20 is disposed on one surface (upper surface in FIG. 1(A)) 20a and disposed toward the light transmission window 15, in the peripheral region of the semiconductor light emitting element 20, specifically The electron beam source device 30 having the planar electron beam emitting portion 32 is surrounded by the region on the one surface of the semiconductor light emitting element 20 and the region on the other side of the semiconductor light emitting element 20 The semiconductor light emitting element 20 is arranged in a manner. In the illustrated example, the electron beam source device 30 is configured as an annular strip-shaped body, and the surface of the emitted electron beam of the electron beam emitting portion 32 faces the electron beam incident surface 20a of the semiconductor light emitting element 20. The posture in the same direction, that is, the posture toward the light transmission window 15 of the vacuum container 10 is disposed so as to surround the semiconductor light emitting element 20, and is fixed to the vacuum container 10 through the support member 37 in this state. The bottom wall of the container base 11. The semiconductor light emitting element 20 and the electron beam source device 30 are transmitted through a conductive line (indicated by a dotted line in FIG. 1(A)) drawn from the inside of the vacuum container 10, and the semiconductor light emitting element 20 is a positive electrode, and the electron beam source device 30 is used. In the form of a negative electrode, it is electrically connected to an electron acceleration means 55 provided outside the vacuum vessel 10 for applying an accelerating voltage.

Further, the semiconductor light-emitting device 20 is transmitted through the conductive support 16 provided on one surface (the upper surface in FIG. 1(A)) of the semiconductor light-emitting element holding member 18, and the other surface 20b opposed to the one surface 20a of the electron beam. The semiconductor light emitting element holding member 18 is fixedly disposed.

Then, the semiconductor light-emitting element 20 is disposed further outward than the electron beam source device 30, and the direction of the orbit of the electron beam emitted from the electron beam source device 30 is directed toward the face 20a of the radiation light of the semiconductor light-emitting device 20. The electric field control electrode 50. Specifically, the electric field control electrode 50 is formed by the body portion 51 having an inner diameter larger than the outer diameter of the electron beam source device 30, and is formed continuously with the body portion 51, and is oriented toward the front end (in FIG. 1). The upper end of (A) is a cylindrical body formed by a tapered portion 52 having a small diameter. The electric field control electrode 50 is disposed so as to surround the outer periphery of the electron beam source device 30, and the base end of the electric field control electrode 50 is fixed to the bottom wall of the container base 11 of the vacuum container 10. The electron beam source device 30 and the electric field control electrode 50 are transmitted through the conductive wire drawn from the inside of the vacuum vessel 10 to the outside (indicated by a dotted line in FIG. 1(A)), and the electron beam source device 30 is used as a positive electrode, and the electric field is used. The control electrode 50 is a negative electrode, and is electrically connected to an electric field control power supply provided outside the vacuum container 10. 57.

As a material of the container base 11 constituting the vacuum container 10, a glass material such as Kovar glass or quartz glass can be used.

Further, as a material constituting the light transmission window 15 of the vacuum container 10, a light that can transmit light from the semiconductor light emitting element 20 is used, and for example, sapphire, quartz glass or the like can be used.

Further, the pressure inside the vacuum vessel 10 is, for example, 10 ^-4 to 10 ^-6 Pa.

As the material constituting the semiconductor light-emitting element holding member 18, the coefficient of thermal expansion is preferably a material close to the value of the coefficient of thermal expansion of the material constituting the container base 11, and for example, when the material of the container base 11 is Kovar, for example, Kovar metal can be used. Wait.

As the material constituting the conductive support 16, a metal having high thermal conductivity such as copper can be used.

As shown in FIG. 2, the electron beam source device 30 of this example includes a cathode electrode 31 having a planar electron beam emitting portion 32. The cathode electrode 31 is formed by forming an electron beam emitting layer 31a on the entire circumferential surface of the cathode substrate 31b. The electron beam emitting layer 31a is formed by supporting a surface of the cathode substrate 31b by a plurality of carbon nanotube tubes.

The method of forming the electron beam emitting layer 31a made of a carbon nanotube on the cathode substrate 31b is not particularly limited, and a known method can be used. For example, a metal catalyst layer formed on the surface by heating can be suitably used. The cathode substrate 31b is supplied with carbon source gas such as CO and acetylene, and carbon is deposited on the metal catalyst layer formed on the surface of the cathode substrate 31b to form carbon nanotubes. The thermal CVD method of the tube, the preparation of the powder of the carbon nanotube formed by the arc discharge method, and the organic binder are contained in a liquid medium, and the paste is applied to the cathode by screen printing. A screen printing method or the like for drying the surface of the substrate 31b.

The cathode electrode 31 is disposed, for example, on one surface of the susceptor frame 36 provided on one surface of a plate-shaped susceptor 35 made of ceramic such as alumina.

In the electron beam source device 30, the shielding member 40 that shields the electron beam from the electron beam emitting portion 32 toward the surface of the electron beam emitting surface 32a in the surface direction is fixed to the susceptor frame in the lateral position of the cathode electrode 31. One side of 36. The shielding member 40 is disposed on the periphery of the electron beam emitting surface 32a of the cathode electrode 31 along the front end of the body portion 41 by the body portion 41 surrounding the cathode electrode 31, and toward the electron beam emitting surface 32a. The flange portion 42 formed to extend inward in the plane direction is formed, whereby the cathode electrode 31 is held and fixed by the inner surface of the flange portion 42 and one surface of the base frame 36.

Above the cathode electrode 31, a mesh-shaped electron extraction electrode (gate electrode) 46 for discharging an electron beam from the electron beam emitting portion 32 is disposed to be disposed away from the electron beam emitting portion 32.

The electron extraction electrode 46 is fixed to one side of the front end portion 48a of the cover member 48 having the end portion bent in an arc shape. The cover member 48 is provided such that the inner surface of the front end portion 48a is in contact with a portion of one surface of the plate-like base frame 39 (having the same potential), and the base frame 39 is fixed to the base 35. One side of the base frame 36 Foreign location. Here, the distance (interval) between the electron extraction electrode 46 and the electron beam emitting surface 32a of each of the electron beam emitting portions 32 of the cathode electrode 31 is, for example, 100 to 1000 μm.

In the above, as the material of the cathode substrate 31b, the shielding member 40, the susceptor frame 36, 39, the electron extraction electrode 46, and the cover member 48 constituting the cathode electrode 31, for example, an alloy containing at least one of iron or nickel may be used. Wait.

The cathode electrode 31 and the electron extraction electrode 46 are electrically connected to the outside through the inside of the vacuum vessel 10 (indicated by a dotted line in FIG. 1(A)), and are electrically connected to the electrons disposed outside the vacuum vessel 10. The beam discharge power source 56.

As shown in FIG. 3, the semiconductor light emitting element 20 is formed, for example, by a substrate 21 made of sapphire, a buffer layer 22 made of, for example, AlN formed on one surface of the substrate 21, and a side formed on the buffer layer 22. The active layer 25 having a single quantum well structure or a multiple quantum well structure, and the active layer 25 is bonded to the light transmission window 15 of the vacuum vessel 10, and the substrate 21 is bonded to the substrate 21 by, for example, a conductive adhesive S. Conductive support 16.

The thickness of the substrate 21 is, for example, 10 to 1000 μm, and the thickness of the buffer layer 22 is, for example, 100 to 1000 nm.

Further, the distance between the active layer 25 of the semiconductor light emitting element 20 and the electron beam source device 30 is, for example, 5 to 15 mm.

Further, the distance between the one surface 20a of the radiation light of the semiconductor light emitting element 20 and the inner surface of the light transmission window 15 is, for example, 3 to 25 mm.

The active layer 25 is a single quantum well structure or a multiple quantum well structure formed by In _x Al _y Ga _1-xy N (0≦x<1, 0<y≦1, x+y≦1), single or plural The quantum well layer 26 and the single or complex barrier layer 27 are formed on the buffer layer 22 in this order.

The respective thicknesses of the quantum well layers 26 are, for example, 0.5 to 50 nm. Further, the barrier layer 27 is selected to have a band gap larger than that of the quantum well layer 26. For example, AlN may be used, and each thickness is set to be larger than the well width of the quantum well layer 26, specifically, for example, 1~ 100nm.

The period of the quantum well layer 26 constituting the active layer 25 is appropriately set in consideration of the thickness of the entire quantum well layer 26, the barrier layer 27, and the active layer 25, and the acceleration voltage of the electron beam to be used, but is usually 1~. 100.

The semiconductor light emitting element 20 described above can be formed, for example, by an MOCVD method (organic metal chemical vapor deposition method). Specifically, a carrier gas made of hydrogen and nitrogen is used, and a raw material gas made of trimethylaluminium and ammonia is vapor-deposited on the (0001) surface of the substrate 21 made of sapphire. Thereby, after forming the buffer layer 22 made of AlN having a required thickness, by using a carrier gas formed of hydrogen gas and nitrogen gas, and by trimethyl aluminum, trimethylgallium, and trimethyl A raw material gas of trimethylindium and ammonia is vapor-deposited on the buffer layer 22 to form a desired thickness having an In _x Al _y Ga _1-xy N (0 ≦ x < 1, 0 < y ≦ 1 , x + y ≦ 1) a single quantum well structure or an active layer 25 of a multi-quantum well structure, whereby the semiconductor light-emitting element 20 can be formed.

In the respective formation processes of the buffer layer 22, the quantum well layer 26, and the barrier layer 27, conditions such as processing temperature, processing pressure, and deposition rate of each layer are required to form the buffer layer 22, the quantum well layer 26, and The composition, thickness, and the like of the barrier layer 27 are appropriately set.

Further, when the quantum well layer 26 made of InAlGaN is formed, as the source gas, in addition to the above, trimethylindium is used, and the treatment temperature is set lower than the formation of the quantum well layer 26 formed of AlGaN. .

Further, the method of forming the semiconductor multilayer film is not limited to the MOCVD method, and for example, an MBE method (molecular beam epitaxy method) or the like may be used.

Then, in the electron beam excitation type light source device of the present invention, the semiconductor light emitting element 20 is provided with a static eliminating member for removing the conductivity of the electric charge incident on the one surface 20a of the electron beam from the electron beam source device 30.

In the electron beam excitation type light source device of the embodiment, the static electricity removing member is formed by, for example, a conductive film 28 provided to cover the outer peripheral side surface of the semiconductor light emitting element 20 and the outer peripheral portion of the one surface 20a. The film 28 is electrically connected or electrically connected to the conductive support 16 via a wire 28a.

As a material for forming the conductive film 28, for example, an Ag paste, an Al paste, a silver solder, or the like can be used.

The thickness of the conductive film 28 is, for example, 1 to 100 μm.

In the electron beam excitation type light source device described above, a voltage is applied between the electron beam source device 30 and the electron extraction electrode 46, and is emitted from the electron beam emitting portion 32 of the electron beam source device 30 toward the electron extraction electrode 46. The electrons are accelerated toward the semiconductor light-emitting element 20 by an acceleration voltage applied between the semiconductor light-emitting element 20 and the electron beam source device 30 to form an electron beam, and the orbital direction of the electron beam is accelerated by The voltage and electric field control power source 57 is applied to the voltage 20 between the electron beam source device 30 and the electric field control electrode 50 toward the surface 20a of the radiation of the semiconductor light emitting element 20. As a result, the electron beam is incident on the semiconductor light emitting element 20. One side 20a, that is, the surface of the active layer 25. Then, in the semiconductor light-emitting device 20, electrons of the active layer 25 are excited by the incident electron beam, whereby light emitted from the surface of the semiconductor light-emitting element 20 by the electron beam entering the surface 20a is transmitted through the vacuum container. A light transmission window 15 of 10 is emitted to the outside of the vacuum vessel 10.

As described above, the voltage applied between the electron beam source device 30 and the electron extraction electrode 46 by the electron beam emitting power source 56 is, for example, 1 to 5 kV.

Further, the acceleration voltage of the electron beam applied by the electron acceleration means 55 is preferably 6 to 12 kV. When the accelerating voltage is too small, it is difficult to obtain a higher light output. On the other hand, when the accelerating voltage is excessively large, X-rays are easily generated from the semiconductor light-emitting element 20, and the semiconductor light-emitting device 20 is easily damaged by the energy of the electron beam, which is not preferable.

Further, the voltage applied between the electron beam source device 30 and the electric field control electrode 50 by the electric field control power source 57 is, for example, -2 to 2 kV.

Then, the electron beam excitation type light source device is provided with a peripheral portion that covers the outer peripheral side surface of the semiconductor light emitting element 20 and the electron beam incident from the electron beam source device 30. The static eliminating member formed of the conductive film 28 can prevent or suppress the charge accumulation on one surface 20a of the semiconductor light emitting element 20 due to the irradiation of the electron beam from the electron beam source device 30, so that the radiation from the electron beam source device 30 can be avoided. The orbital change of the electron beam, or the electrons from the electron beam source device 30 rebound due to the face 20a of the semiconductor light emitting element 20, and the electron beam from the electron beam source device 30 can be efficiently irradiated to the semiconductor light emitting element 20. One side 20a, so a higher light output (luminous efficiency) can be obtained.

Further, since the electron beam from the electron beam source device 30 is incident on the one surface 20a of the semiconductor light emitting device 20, the light is incident on the one surface 20a of the semiconductor light emitting element 20 by the electron beam incident. The other surface 20b can cool the semiconductor light emitting element 20 through the conductive support 16. Therefore, the semiconductor light emitting element 20 can be efficiently cooled, and therefore, it is possible to maintain a high output light without lowering the light emitting efficiency of the semiconductor light emitting element 20.

[Example 1]

The electron beam excitation type light source device according to the present invention was produced in accordance with the configuration shown in Fig. 1 to Fig. 3. The specifications of this electron beam excitation type light source device are as follows.

[Vacuum container (10)]

Container base (11): Material: Kovar glass, outer dimensions: 40mm × 40mm × 20mm, thickness: 2mm, opening: 36mm × 36mm

Light transmission window (15): Material: sapphire, size: 40mm × 40mm × 2mm

[Electron beam source device (30)]

Electron beam discharge portion (32): outer diameter: 24 mm, inner diameter: 20 mm, thickness: 0.02 mm, area of the surface irradiated by the electron beam: 138 mm ²

[Semiconductor light-emitting element (20)]

Substrate (21): Material: sapphire, thickness: 400μm

Buffer layer (22): Material: GaN, thickness: 2μm

Active layer (25): Material of quantum well layer (26): InGaN, thickness of quantum well layer (26): 3 mm, material of barrier layer (27): GaN, thickness of barrier layer (27): 18 mm, quantum well Period of layer (26): 6

Conductive film (28): Material: Ag, thickness: 500μm

Further, in the electron beam excitation type light source device manufactured as described above, as shown in FIG. 4, a semiconductor having the same structure as that of the electron beam excitation type light source device of the present invention is produced, except that the charge remaining suppression member is not provided. An electron beam excitation type light source device for comparison of the light-emitting elements 201.

The light output and the luminous efficiency when the electron beam excitation type light source device and the comparative electron beam excitation type light source device according to the present invention are operated under the operating conditions shown below are measured. The results are disclosed in Table 1 below. In Table 1, the value of the light output value and the luminous efficiency of the electron beam excitation type light source device of the present invention are all used to indicate an electron beam excitation type light source device for comparison. The relative value of the value of the light output and the value of the luminous efficiency.

<Action conditions>

Voltage applied between the electron beam source device and the extraction electrode: 2kV

Acceleration voltage of electron beam: 8kV

Voltage applied between the electron beam source device and the electric field control electrode: 1 kV

Input power to semiconductor light-emitting elements: 32mW

According to the above results, it was confirmed that the electron beam excitation type light source device in which the charge removing member is provided in the semiconductor light emitting element can obtain a light output of 20 times larger than that of the electron beam excitation type light source device for comparison.

Although the embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various modifications can be added.

For example, the conductive film constituting the charge removing member is not necessarily required to cover all of the outer peripheral edge portion of the surface of the semiconductor light emitting element that is irradiated with the electron beam from the electron beam source device and the outer peripheral side surface of the semiconductor light emitting element, even if The structure of the semiconductor light-emitting element formed on at least a part of the outer peripheral edge portion of the surface irradiated with the electron beam from the electron beam source device and the outer peripheral side surface of the semiconductor light-emitting device can also be expected.

Further, the static eliminating member may be formed of a conductive film formed on the surface of the semiconductor light emitting element that is irradiated with the electron beam from the electron beam source device, for example, a conductive film having an opening.

In the above-described embodiment, the structure of the semiconductor light-emitting device that emits light from one side of the electron beam is described. However, as shown in FIG. 5, the electron beam source device 30 is disposed in the electron beam emitting unit 32. The surface is disposed in a state in which one of the semiconductor light emitting elements 20 faces, and an electron beam from the electron beam source device 30 is incident on one surface of the semiconductor light emitting element 20, whereby light emitted from the other surface of the semiconductor light emitting element 20 is transmitted through The structure in which the light window 15 is emitted may also be used.

Further, the electron beam source device is not limited to a specific shape as long as it has a planar electron beam radiation portion, and is not limited to those formed of carbon nanotubes. In addition, the arrangement position of the electron beam source is not particularly limited as long as it is around the semiconductor light-emitting element and can enter the position of the electron beam on the light-emitting surface of the semiconductor light-emitting element.

10‧‧‧Vacuum container

11‧‧‧ Container base

15‧‧‧Light window

16‧‧‧Electrically conductive support

18‧‧‧Semiconductor light-emitting element holding member

20,201‧‧‧ Semiconductor light-emitting components

20a‧‧‧ side

20b‧‧‧The other side

21‧‧‧Substrate

22‧‧‧ Buffer layer

25‧‧‧Active layer

26‧‧‧Quantum wells

27‧‧‧Baffle layer

28‧‧‧ Conductive film

28a‧‧‧Wire section

S‧‧‧ Conductive adhesive

30‧‧‧Electron beam source device

31‧‧‧Cathode electrode

31a‧‧‧Electron beam release layer

31b‧‧‧Cathode substrate

32‧‧‧Electron beam release department

31a‧‧‧Electronic beam release surface

35‧‧‧Base

36‧‧‧Base frame

37‧‧‧Support components

39‧‧‧Base frame

40‧‧‧Shielding members

41‧‧‧ Body

42‧‧‧Flange

46‧‧‧Electronic extraction electrode

48‧‧‧ Cover members

48a‧‧‧ front end

50‧‧‧Electrical control electrode

51‧‧‧ Body

52‧‧‧ Cone

55‧‧‧Electronic acceleration means

56‧‧‧Electronic discharge power supply

57‧‧‧Power supply for electric field control

71‧‧‧ glass valve

72‧‧‧ panel

73a, 73b‧‧‧reflective layer

74‧‧‧Semiconductor light-emitting components

75‧‧‧Electronic gun

80‧‧‧vacuum container

81‧‧‧Light window

82‧‧‧Semiconductor light-emitting components

83,84‧‧‧Light reflecting members

85‧‧‧Laser structure

86‧‧‧Electronic beam source

87‧‧‧Electronic acceleration means

1 is an explanatory view showing an outline of an example of an electron beam excitation type light source device according to the present invention, wherein (A) is a side cross-sectional view, and (B) is a plan view showing a state in which a light transmission window is removed.

Fig. 2 is a schematic cross-sectional view showing the structure of an electron beam source device of the electron beam excitation type light source device shown in Fig. 1 taken along line A-A of Fig. 1(B).

FIG. 3 is a cross-sectional view for explaining a schematic configuration of a semiconductor light emitting element of the electron beam excitation type light source device shown in FIG. 1.

4 is a cross-sectional view for explaining the structure of a semiconductor light emitting element of the electron beam excitation type light source device for comparison prepared in the first embodiment.

Fig. 5 is a conceptual diagram showing a schematic configuration of another example of the electron beam excitation type light source device of the present invention.

Fig. 6 is a cross-sectional view for explaining an outline of an example of a conventional electron beam excitation type light source device.

Fig. 7 is a cross-sectional view for explaining a schematic configuration of another example of the prior art electron beam excitation type light source device.

16‧‧‧Electrically conductive support

20‧‧‧Semiconductor light-emitting elements

20a‧‧‧ side

20b‧‧‧The other side

21‧‧‧Substrate

22‧‧‧ Buffer layer

25‧‧‧Active layer

26‧‧‧Quantum wells

27‧‧‧Baffle layer

28‧‧‧ Conductive film

28a‧‧‧Wire section

Claims (2)

An electron beam excitation type light source device, which is an electron beam source device, and an electron beam excitation type in which a semiconductor light emitting element that emits ultraviolet light by excitation with an electron beam emitted from the electron beam source device is disposed inside a vacuum container In the light source device, the semiconductor light emitting element is provided with a static eliminating member for removing conductivity of electric charges incident on one surface of the electron beam from the electron beam source device. The electron beam excitation type light source device according to claim 1, wherein the semiconductor light emitting element is fixed to the vacuum container through a conductive support, and the static eliminating member is electrically connected to the conductive material. Support body.