TW201306289A - Solar cell structure having a nano anti-reflection layer - Google Patents

Abstract

A solar cell structure includes a substrate, a nano anti-reflection layer, a p-i-n structure and a transparent conductive layer. The substrate has a first electrode formed thereon. The nano anti-reflection layer and the p-i-n structure are provided on the substrate and the transparent conductive layer is provided on the p-i-n structure so as to form a second electrode. The nano anti-reflection layer is used to reduce a reflection degree of solar radiation incident so as to enhance an efficiency of solar energy conversion.

Description

Solar cell structure with nano anti-reflection layer

The present invention relates to a solar cell construction having a nano anti-reflection layer; and more particularly to a solar cell construction using a low temperature technique to form a nano antireflection layer.

For example, in terms of solar energy conversion efficiency, a solar cell made of twins is limited by the solar light energy that can absorb only a certain electron volt or more, and is still limited by the loss of the sun reflected light and the material to the sunlight. Insufficient absorptive capacity, failure of the carrier to be captured by defects in the material before it has been exported, or the carrier being captured by the suspension bond on the surface of the material to produce a composite, etc., resulting in a decrease in conversion efficiency. Therefore, in order to improve the efficiency of the twin solar cell, an anti-reflection layer is provided to reduce the occurrence of solar reflection.

A solar cell structure of a solar cell having an antireflection layer, such as the solar cell of the anti-reflection layer of the Republic of China Patent Application Publication No. 200933911, discloses a solar cell having an anti-reflection layer. The anti-reflection layer solar cell comprises a substrate, at least one anti-reflection laminate, at least one front electrode and at least one back electrode. The substrate has a front side and a back side, and has a first type semiconductor layer close to the back side and a second type semiconductor layer close to the front side. The anti-reflective laminate is formed on the front surface of the substrate and includes a plurality of layers of high refractive index material and a plurality of layers of low refractive index material. The layers of the high refractive index material and the layers of the low refractive index material are interlaced with each other, and one of the layers of the low refractive index material is located on the front surface of the substrate, and the refractive index of each of the high refractive index material layers is greater than each of the low refractive indices. Rate the refractive index of the material layer. The front electrode is formed on the anti-reflective layer and electrically connected to the second type semiconductor layer. The back electrode is formed on the back surface of the substrate and electrically connected to the first type semiconductor layer.

Another conventional solar cell construction, such as the multi-layer anti-reflective coating for solar cells, is disclosed in the Patent Application Publication No. 200933905, which discloses a solar cell having a multilayer film anti-reflection layer. The solar cell with the multilayer film anti-reflection layer mainly uses a multilayer film as an anti-reflection layer of a bismuth-based or thin film solar cell to increase the transmittance to absorb more light sources and improve the efficiency of the bismuth-based or thin-film solar cell. It can reduce the related semiconductor processes such as photovoltaic layer etching, and reduce the efficiency of manufacturing more complex germanium-based or thin-film solar cells, which can improve the performance of germanium-based or thin-film solar cells.

Another conventional solar cell construction, such as the method and apparatus for fabricating an anti-reflective or passivation layer for a solar cell, is disclosed in the Patent Application Publication No. 200840070, which discloses a solar cell having a multilayer film antireflection layer. The method of fabricating an anti-reflective and/or passivating coating for a solar cell deposits a hydrogen-containing anti-reflective and/or passivating coating on a germanium wafer by sputtering.

Another conventional solar cell construction, such as the method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots, which discloses an anti-reflective layer. Solar battery. The anti-reflection layer of the solar cell is formed of a silicon nitride or a silicon oxide film.

However, the above-mentioned Republic of China Patent Application Publication No. 200933911, No. 200933905, No. 200840070, and U.S. Patent Application Publication No. 20110027935 only provide a general anti-reflection layer, which has a considerable space for improving solar energy conversion efficiency. Therefore, there is a need in the conventional solar cell to further provide a higher solar energy conversion efficiency. The foregoing descriptions of the present invention are not intended to limit the present invention.

In view of the above, the present invention provides a solar cell structure having a nano anti-reflection layer, which provides a nanostructure using a nano anti-reflection layer, and the nanostructure is used to reduce the sun. Light reflectivity to solve the problem of low solar energy conversion efficiency of conventional solar cells.

The main object of the present invention is to provide a solar cell structure having a nano anti-reflection layer, which provides a nanostructure using a nanometer anti-reflection layer, and the nanostructure is used to reduce the solar reflectance to achieve Improve the efficiency of solar energy conversion.

In order to achieve the above object, a solar cell structure of the present invention comprises: a substrate made of a transparent material, the substrate having a first electrode layer; at least one nanometer anti-reflection layer disposed on the substrate, the nano-layer The anti-reflective layer provides a nanostructure; a p-type semiconductor layer disposed on the nano anti-reflection layer; an i-generation layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer Provided on the i-generation layer; and a transparent conductive film layer disposed on the n-type semiconductor layer to form a second electrode layer; wherein the nano anti-reflection layer is configured to block sunlight Reflection occurs to reduce the solar reflectance in order to improve solar energy conversion efficiency.

A solar cell structure according to another preferred embodiment of the present invention comprises: a substrate made of a transparent material, the substrate having a first electrode layer; and at least one nanometer anti-reflection layer disposed on the substrate, The nano anti-reflective layer provides a nanostructure; a pin structure layer is disposed on the substrate, the pin structure layer forms a pn junction layer; and a transparent conductive film layer is disposed on the pin structure layer Forming a second electrode layer; wherein the nano anti-reflective layer and the pin structure layer are disposed between the substrate and the transparent conductive film layer.

In the preferred embodiment of the present invention, the p-i-n structural layer has a first side and a second side, and the nano anti-reflective layer is disposed on the first side or the second side of the p-i-n structural layer.

The nanostructure of the preferred embodiment of the invention comprises a plurality of nano-pillars or a plurality of nanotubes.

In the preferred embodiment of the invention, the nano anti-reflective layer is grown on a metal layer.

The nano antireflection layer of the preferred embodiment of the invention is a zinc oxide layer [ZnO].

The transparent conductive film layer of the preferred embodiment of the invention has a plurality of electrodes.

In the preferred embodiment of the invention, the electrode is a silver electrode layer.

The solar cell of the preferred embodiment of the invention may be selected from a single crystal germanium solar cell, a polycrystalline germanium solar cell or an amorphous germanium solar cell.

In order to fully understand the present invention, the preferred embodiments of the present invention are described in detail below and are not intended to limit the invention.

The nano antireflection layer of the solar cell structure of the preferred embodiment of the present invention can be formed on various solar cells, such as: single crystal germanium, polycrystalline germanium, amorphous germanium, gallium arsenide [GaAs], cadmium telluride [CdTe] or copper. Thin film solar cells of indium selenide [CIGS], but are not intended to limit the scope of the invention. For example, one or more of the nano anti-reflective layers of the preferred embodiment of the present invention can be grown inside a solar cell, but it is not intended to limit the scope of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a side cross-sectional view showing the construction of a solar cell having a nano antireflection layer in accordance with a preferred embodiment of the present invention. Figure 2 is a block diagram showing the construction of a solar cell structure having a nano anti-reflective layer in accordance with a preferred embodiment of the present invention. Referring to FIGS. 1 and 2, the solar cell structure of the preferred embodiment of the present invention comprises a substrate 11, at least one nano anti-reflection layer 12, a p-type semiconductor layer 13, an i-generation layer 14, and an n-type. The semiconductor layer 15 and a transparent conductive film layer 16, wherein the p-type semiconductor layer 13, the i-power generating layer 14, and the n-type semiconductor layer 15 constitute a pin structure layer.

Referring to FIGS. 1 and 2 again, the substrate 11 is made of a transparent material such as various ITO glass or other transparent materials for incident sunlight (including visible light, infrared light, and ultraviolet light). To the inside of the solar cell construction. In addition, in the preferred embodiment of the present invention, the substrate 11 has a first electrode layer 110, and the first electrode layer 110 can be selected from a zinc metal electrode layer.

Referring to FIGS. 1 and 2 again, the nano anti-reflection layer 12 may be provided with a single anti-reflection layer or a plurality of anti-reflection layers. The anti-reflective layer 12 provides a nanostructure in an anti-reflective configuration, and the nanostructure comprises a plurality of nanopiles or a plurality of nanotubes. In the solar cell, the nanostructure of the nano anti-reflection layer 12 serves to prevent reflection of sunlight incident from the side of the substrate 11 to reduce the reflectance of the solar light in order to improve the solar energy conversion efficiency.

Referring to FIGS. 1 and 2 again, the nano anti-reflective layer 12 is disposed on the first electrode layer 110 of the substrate 11. For example, the nano anti-reflective layer 12 is grown on a metal layer [eg, zinc], that is, the nano anti-reflective layer 12 is directly grown on the substrate 11 in an appropriate manner. Alternatively, another preferred embodiment of the present invention transfers the pre-grown nanostructure to the substrate 11 by a suitable process [e.g., a printing process], but it is not intended to limit the scope of the invention. Further, the nano antireflection layer of the preferred embodiment of the invention is a zinc oxide layer [ZnO] or other material layer.

Referring to FIGS. 1 and 2 again, the p-type semiconductor layer 13 is provided on the nano anti-reflection layer 12. In contrast, the i power generation layer 14 is disposed on the p-type semiconductor layer, and the i power generation layer 14 is made of a non-doped material, and the thickness of the i power generation layer 14 is appropriately lowered. In contrast, the n-type semiconductor layer 15 is further disposed on the i-power generating layer 14 to form the p-i-n structural layer. When sunlight is incident on the p-type semiconductor layer 13 and the n-type semiconductor layer 15, a built-in electric field is generated in the i-power generation layer 14.

Referring to FIG. 1 again, in the pin structure layer, the i power generation layer 14 is sandwiched between the p-type semiconductor layer 13 and the n-type semiconductor layer 15 so as to utilize the pin. The structural layer forms a pn junction layer. At this time, the nano anti-reflection layer 12 is adjacent to the p-type semiconductor layer 13 of the [first side] of the p-i-n structure layer. Alternatively, in another preferred embodiment of the present invention, the nano anti-reflective layer 12 is adjacent to the n-type semiconductor layer 15 of the p-i-n structural layer [second side].

Referring to FIGS. 1 and 2 again, the transparent conductive film layer 16 is disposed on the pin structure layer composed of the p-type semiconductor layer 13, the i-power generation layer 14, and the n-type semiconductor layer 15 to form a second electrode. A layer corresponding to the first electrode layer 110 of the substrate 11 to output a photoelectric conversion current. In the preferred embodiment of the present invention, the transparent conductive film layer 16 has a plurality of electrodes 160, and the electrode 160 is a silver electrode layer.

Fig. 3 is a scanning electron microscope [SEM] photograph showing the formation of a nano antireflection layer in a solar cell structure according to a preferred embodiment of the present invention, which is compared with the nano antireflection layer of Fig. 2. Referring to Figures 1 and 3, the nano-column or nanotube of the nano anti-reflection layer 12 grows in a random manner [randomly], which is used to reduce the reflectance of incident sunlight, thereby effectively improving The efficacy of photoelectric conversion efficiency.

The foregoing preferred embodiments are merely illustrative of the invention and the technical features thereof, and the techniques of the embodiments can be carried out with various substantial equivalent modifications and/or alternatives; therefore, the scope of the invention is subject to the appended claims. The scope defined by the scope shall prevail.

11. . . Substrate

110. . . First electrode layer

12. . . Nano anti-reflection layer

13. . . P-type semiconductor layer

14. . . i power generation layer

15. . . N-type semiconductor layer

16. . . Transparent conductive film layer

160. . . electrode

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing the structure of a solar cell having a nano antireflection layer in accordance with a preferred embodiment of the present invention.

Figure 2 is a block diagram showing the construction of a solar cell structure having a nano anti-reflective layer in accordance with a preferred embodiment of the present invention.

Fig. 3 is a scanning electron microscope [SEM] photograph of a solar cell structure of a preferred embodiment of the present invention to form a nano antireflection layer.

11. . . Substrate

110. . . First electrode layer

12. . . Nano anti-reflection layer

13. . . P-type semiconductor layer

14. . . i power generation layer

15. . . N-type semiconductor layer

16. . . Transparent conductive film layer

160. . . electrode

Claims (9)

A solar cell structure comprising: a substrate made of a transparent material, the substrate having a first electrode layer; at least one nano anti-reflective layer disposed on the substrate, the nano anti-reflective layer provided a nano-structure; a p-type semiconductor layer disposed on the nano anti-reflection layer; an i-power generation layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the i-generation And a transparent conductive film layer disposed on the n-type semiconductor layer to form a second electrode layer; wherein the nano-anti-reflective layer has a nano-structure to prevent sunlight from being reflected to reduce Solar reflectance to improve solar energy conversion efficiency. A solar cell structure comprising: a substrate made of a transparent material, the substrate having a first electrode layer; at least one nano anti-reflective layer disposed on the substrate, the nano anti-reflective layer provided a nanostructure; a pin structure layer disposed on the substrate, the pin structure layer forming a pn junction layer; and a transparent conductive film layer disposed on the pin structure layer to form a second The electrode layer; wherein the nano anti-reflection layer and the pin structure layer are disposed between the substrate and the transparent conductive film layer. The solar cell structure of claim 2, wherein the pin structure layer has a first side and a second side, and the nano anti-reflection layer is disposed on the first side or the second side of the pin structure layer. . The solar cell construction of claim 1 or 2, wherein the nanostructure comprises a plurality of nano-pillars or a plurality of nanotubes. The solar cell structure of claim 1 or 2, wherein the nano anti-reflective layer is grown on a metal layer. The solar cell structure of claim 1 or 2, wherein the nano anti-reflective layer is a zinc oxide layer. The solar cell structure according to claim 1 or 2, wherein the transparent conductive film layer has a plurality of electrodes. The solar cell structure of claim 7, wherein the electrode is a silver electrode layer. The solar cell structure of claim 1 or 2, wherein the solar cell is selected from the group consisting of a single crystal germanium solar cell, a polycrystalline germanium solar cell, or an amorphous germanium solar cell.