TW201306084A - Passive compensation for temperature-dependent wafer gap changes in plasma processing systems - Google Patents

Abstract

Passive wafer gap compensation arrangements and methods relying on temperature-driven dimensional change of thermally expanding component(s) to counteract, substantially or partially, the change in the wafer gap due to chamber component temperature change is provided. The passive arrangements and techniques involve passively raising or lowering the substrate-facing component or the substrate support to counteract, substantially or partially, the gap-narrowing effect or gap-expanding effect of rising temperature, thereby reducing or eliminating the change in the wafer gap due to a change in the chamber component temperature. Cooling arrangement(s) and thermal break(s) are optionally provided to improve performance.

Description

Passive compensation of wafer gap variation depending on temperature in plasma processing systems

The present invention relates to a plasma processing system; in particular, the present invention relates to a passive wafer gap compensation configuration and method in a plasma processing system.

Plasma has long been used to process substrates (eg, wafers, flat panels, etc.) to make electronic products (eg, semiconductor integrated circuits, flat panel displays, LCDs, etc.). The plasma strengthening treatment of the substrate typically involves placing the substrate in a plasma processing chamber of a suitable plasma processing system (such as a plasma processing tool set), positioning the substrate over the workpiece holder or fixture, and placing the appropriate source The gas is introduced into the processing chamber and the source gas is excited into a plasma according to a particular formulation for deposition or etching purposes.

As the feature size of the substrate becomes smaller and the processing requirements become more stringent, there is a need to more tightly control the processing parameters to ensure that the etching or deposition results meet the requirements. One of the parameters to be controlled during the plasma processing is the state of the wafer bevel, which is located at the outer edge of the wafer. At the bevel, a film is deposited during construction of the device in a state of high mechanical tension or stress. During wafer processing and processing of these films, flaking occurs and defects are formed on the surface of the wafer, resulting in a decrease in grain yield. One of the parameters that needs to be controlled in the bevel etching process involves the wafer gap. Here, when the term is used, the wafer gap is related to the upper electrode (which may be grounded or supplied with a DC or RF power source or the like or an insulating plate or a combination of electrically insulating and conductive materials) and the substrate. The distance between them. More specifically, in the case of the bevel etching, the wafer gap refers to the lower surface of the upper insulator plate disposed above and spaced apart from the substrate (the plasma treatment is not performed during the bevel etching) The distance between the surface of the substrate and the upper surface of the substrate is required to suppress the formation of the plasma in the central region of the substrate. In bevel etching, the wafer gap is the key to controlling the etch boundary toward the center of the wafer. This etch boundary is defined such that the etch rate of the substrate below this radius will fall below a certain threshold and the etching becomes unimportant. This threshold is typically about 50 nm/min. In other words, this critical gap will determine how deep the plasma invades from the peripheral area around the wafer toward the center of the wafer. although This erosion distance is dependent on the effect, but is typically in the range of 500 microns from the edge (tip) of the wafer.

In general, the wafer gap is controlled by the driving mechanism, and the driving mechanism will raise or lower the upper insulator plate according to, for example, the need to load and unload the substrate, and control the aforementioned wafer gap for different functions. For example, some drive mechanisms use stepper motors and/or associated gearing or spiral configurations to finely control wafer gaps based on wafer gap values set by the processing recipe.

In some cases, the plasma strengthening treatment of the substrate will involve the temperature of the raised substrate and the processing chamber hardware. For example, a bevel etch recipe would require the substrate and process chamber hardware to have a temperature in the range of about 80 degrees Celsius or higher. This elevated temperature is achieved by actively heating the process chamber components, and it has been noted that as the process chamber components heat up, the thermal expansion of the process chamber components will cause variations in the wafer gap. The change in wafer gap due to thermal expansion will be severe enough to re-correct the gap in the process chamber at various temperatures to handle variations in wafer gap depending on temperature. Since the recalibration will cause the process chamber to be opened, recalibration will result in an increase in the offline time of the module and is therefore not required by me. In addition, the need for recalibration of the gap depending on temperature will prevent the user of the tool from being able to process a particular wafer at different temperatures in a single operation. This ability to perform immediate calculations on temperature changes will be a processing hub for us for some bevel etch.

For example, in some cases, in order to overcome temperature-dependent thermal expansion, it may be necessary to change the wafer gap value employed by the drive mechanism to reposition the insulator plate. In the case of bevel etching, the wafer gap may be as small as 350 microns, and in some systems, for every 10 °C temperature change, temperature-dependent thermal expansion will cause the wafer gap to shrink to its specified value. 3%. By increasing the wafer gap value in the recipe to account for shrinkage of the temperature-dependent wafer gap, the drive mechanism can provide some degree of compensation as the chamber components heat up.

However, as described above, the correction of the wafer gap is labor intensive and time consuming, and the handling of the thermal expansion problem affecting the wafer gap is quite troublesome. Embodiments of the present invention provide an improved arrangement and method for treating thermal expansion problems associated with temperature that affect wafer gaps in a plasma processing system.

The invention provides a plasma processing system for processing a substrate, the plasma processing system having at least one processing chamber having at least one substrate carrier and a component facing the substrate, the component facing the substrate An upper surface of the substrate is spaced apart from the substrate at a position above the substrate. During the process, the substrate is disposed over the top surface of the substrate carrier and is positioned on the substrate carrier Between the components facing the substrate, the plasma processing system includes: a carrier structure facing the components of the substrate, coupled between the component facing the substrate and an upper processing chamber component of the plasma processing chamber So that the substrate-facing component is positioned above the substrate during the process, so that a desired gap exists between a lower surface of the component facing the substrate and an upper surface of the substrate; The means for passively moving the component facing the substrate is configured to passively move the component facing the substrate in response to a temperature change experienced by at least one component of the plasma processing chamber, and the element facing the substrate The temperature change experienced by the at least one component will cause a change in the desired gap when the device is not passively moved, and the device for passively moving the component facing the substrate is dependent on the device being thermally driven. Dimensional changes to achieve this movement.

The invention provides a plasma processing system for processing a substrate, the plasma processing system having at least one processing chamber having at least one substrate carrier and a component facing the substrate, the component facing the substrate An upper surface of the substrate is spaced apart from the substrate at a position above the substrate. During the process, the substrate is disposed over the top surface of the substrate carrier and is positioned on the substrate carrier Between the components facing the substrate, the plasma processing system includes: a carrier structure facing the components of the substrate, coupled between the component facing the substrate and an upper processing chamber component of the plasma processing chamber So that the substrate-facing component is positioned above the substrate during the process, so that a desired gap exists between a lower surface of the component facing the substrate and an upper surface of the substrate; The means for passively moving the substrate carrier passively moves the substrate carrier back to a temperature change experienced by at least one component of the plasma processing chamber, and the substrate carrier is not passively moved When the case, the at least one element subjected to the temperature change will cause a change required to produce the gap, the driven means moving the substrate carrier by means of the heat-dependent The size of the drive changes to achieve this movement.

The invention will be described in detail below with reference to some embodiments of the invention illustrated in the drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be apparent to those skilled in the art that the present invention may be practiced without some or all of the specific details. In other instances, detailed descriptions of well-known processing steps and/or structures are omitted in order to avoid unnecessarily obscuring the present invention.

Embodiments of the present invention relate to a passive compensation arrangement and method for counteracting variations in wafer gap due to temperature variations. In one or more embodiments, if the wafer gap tends to shrink as the process chamber element heats up (eg, caused by a change in the temperature set point of the system or caused by continued operation), An auxiliary hardware in the form of a thermal expansion element is then added to passively move (e.g., increase) the upper insulator plate at the same rate of change. Therefore, regardless of the temperature change, the wafer gap can be kept substantially unchanged by passive mechanical elimination or cancellation.

As used herein, the term "passive" means that embodiments of the invention relate to compensating wafer gaps with devices that are not actuators (eg, an electronic, hydraulic, magnetic, mechanical, or pneumatic power source). Change. It must be noted that in any of the known systems embodying one or more embodiments of the present invention, while still employing the existing actuator to actively drive the positioning of the upper insulator plate as previously provided Some active compensation, but the embodiment of the present invention that performs passive compensation is not the part that uses the gap drive mechanism to achieve its compensation. In a different manner, although the present invention does not require passive compensation as a wafer gap compensation mechanism in the plasma processing system, the passive compensation method described herein does not employ an active actuator. Thus, the passive compensation method of embodiments of the present invention may exist alone or in conjunction with existing known active compensation methods utilizing, for example, a gap drive mechanism.

For example, embodiments of the present invention do not employ an actuator to drive the upper insulator plate away from or toward the substrate carrier, or to drive the lower electrode to compensate or counteract the gap reduction effect or gap widening effect caused by temperature changes. Although the driving mechanism of the prior art is Temperature changes can initially set wafer gaps or correct wafer gaps of different values, but such active compensation strategies are not required by the present invention (although such conventional compensation strategies are among known plasma processing systems) It may also coexist with embodiments of the invention). More specifically, embodiments of the present invention mechanically eliminate or mechanically cancel the aforementioned shrinkage or enlargement of the wafer gap depending on the thermally driven dimensional change of the thermal expansion element (e.g., temperature driven expansion properties).

It must be noted from the outset that in the present description, the use of a specific example of a thermal expansion element illustrates passively counteracting the substantial or localized gap narrowing effect caused by the elevated chamber element temperature. However, the invention is not limited to the examples explicitly set forth herein, and is not limited to the gap narrowing effect. What we must understand is that the present invention also covers the case where the wafer gap is widened or expanded due to the elevated processing chamber element temperature, and the proper arrangement of the thermal expansion element can also be used to passively offset the temperature of the elevated processing chamber component. A substantial or localized wafer gap expansion effect. Modifications to methods of coupling, locating, joining, etc., of thermal expansion elements used to passively counteract substantial or localized gap reduction effects or gap widening effects caused by warming are well known to those having ordinary skill in the art. . Further, although the temperature rise is taken as an example, the gap may be changed (turned on or off) due to a decrease in temperature. The principles described herein are equally applicable to such scenarios.

In one or more embodiments, the thermal expansion element is coupled to the carrier structure, and the carrier structure mechanically holds the upper insulator plate above the wafer to enhance the expansion of the thermal expansion element as the temperature increases. Insulator board. For example, if the upper insulator plate is coupled to the mechanical support point of the reference of the process chamber structure via the retaining assembly of the upper insulator plate, the thermal expansion element (group) can be utilized to increase the reference mechanical support point as the temperature rises. In this manner, when the carrier structure of the upper insulator plate expands or expands in response to an increase in temperature (in one example, the rise in temperature tends to narrow the wafer gap), the same temperature rise will also cause the thermal expansion element ( The expansion of the group increases the mechanical point of the reference, thereby increasing the upper insulator plate, thereby counteracting the substantial or local wafer gap reduction effect caused by the temperature rise.

In a similar manner, it is also possible to passively offset the wafer gap expansion effect that occurs substantially or locally in the case of temperature rise by appropriately arranging the thermal expansion elements. should.

In one or more embodiments, in order to increase the efficiency of the passive compensation arrangement, at least a portion of the aforementioned carrier structure (and/or other components) of the upper insulator plate is thermally insulated from elongation or Expanded to minimize the amount of change in wafer gap. The passive compensation configuration can be made simpler or more efficient or of a smaller size since there are only a few factors that reduce or swell to be offset or involve only a small change in wafer gap.

The features and advantages of embodiments of the invention will be apparent from the description and appended claims. 1 shows a simplified schematic of a typical plasma processing chamber 100 including a substrate carrier 102 for carrying wafers 104 during processing. In an embodiment, the substrate carrier 102 is an electrode. In another embodiment, the substrate carrier 102 is a workpiece holder. In yet another embodiment, the substrate carrier 102 is a jig.

The components facing the substrate are shown coupled to a carrier structure of the components facing the substrate. In the example of FIG. 1, the components facing the substrate are in the form of an upper insulator plate 106 and exhibit a carrier structure 108 coupled to the upper insulator plate, the mechanism for coupling the upper insulator plate 106 to the reference of the process chamber structure. Support point 110. What we must understand is that although in the example of FIG. 1, the component 106 facing the substrate is an upper insulator plate, the embodiment of the present invention is also applicable to the case where the component facing the substrate is an upper electrode (may be It is powered or grounded, for example, by applying a DC bias to it as needed.)

For example, in order to suspend the upper insulator plate 106 above the wafer 104, the reference mechanical support point 110 is an element (or portion thereof) on the process chamber structure, and by virtue of the upper insulator plate The carrier structure 108 is coupled to form a wafer gap 120 during processing.

In order to facilitate loading and unloading of the wafer, and to facilitate driving the wafer gap 120 to a predetermined wafer gap value set by the processing recipe, the driving mechanism 122, i.e., reference numeral 122A in FIG. As shown in 122B, the wafer gap 120 is driven. During processing, plasma is generated by the injected process gas (group) in the bevel zone, and the bevel zone is treated (eg, etched). Maintaining a narrower wafer gap above the wafer will ensure that the plasma is not formed over the central portion of the substrate because of the inside of the substrate Plasma treatment of the side regions is generally not required during ramp processing.

In general, the drive mechanism 122 is configured to drive the wafer gap to a certain position by using the precision motor/gear combination and the position decoder for feedback. Once the wafer gap is driven to the specified position by the wafer drive mechanism 122, the wafer gap is considered set and other recipe parameters (such as RF power, pressure, gas flow, etc.) are also set. Processing will begin.

However, in some cases, to achieve a certain bevel etch, the process chamber hardware will rise to a relatively high temperature, for example, about 80 degrees Celsius. For example, although the plasma processing chamber and its components have been calibrated at low temperatures (e.g., room temperature), they may operate at elevated temperatures. Process chamber elements composed of different materials and having different heat capacities and different physical lengths will expand at different expansion rates and will undergo different length changes as a function of time and temperature.

This rise in temperature of the process chamber components will affect the wafer gap in a variety of ways. In a certain processing chamber, the wafer gap will narrow as the temperature rises. In other processing chambers, the wafer gap expands as the aforementioned temperature rises. Such changes will be sufficient to affect many effects, including bevel etching, where the gap system is relatively small (eg, less than 700 microns) and at room temperature with the highest processing temperature (ie, after the processing chamber has been in operation for a certain period of time) When a temperature change occurs in the range between the temperatures obtained by the process chamber components, a temperature rise of 10 ° C occurs, causing a 3% change in the preset wafer gap. For example, in the case of a process chamber heated to 120 ° C (eg, 20 ° C at room temperature), the process chamber components will experience a 100 ° C change and the gap will vary by 30%. This large percentage variation in wafer gap will have a significant impact on the results of the bevel etch. For example, a bevel etch rate that is narrower than the desired wafer gap will result in less plasma erosion above the wafer, thereby reducing the etch rate at a known distance from the tip of the bevel. This variation in wafer gap variation depending on temperature will cause the etch front to shift more outwardly toward the wafer tip than desired, thereby reducing the yield improvement of the bevel tool. Since some wafers are not flat, smaller gaps will also be a problem. The nominal gap will better overcome the unevenness of the production wafer. Reducing the gap will undesirably increase the risk that the insulator plate contacts the surface above the substrate, on the device side.

In one or more embodiments, the thermal expansion element is coupled to a carrier structure for mechanically holding the upper insulator plate above the wafer, and passively when the thermal expansion element expands as the temperature increases The upper insulator plate is raised to counteract the aforementioned wafer gap reduction effect. Figure 2 shows a simplified schematic of a typical plasma processing chamber employing a thermally expandable element that passively maintains a wafer gap that is substantially constant and independent of temperature variations.

Referring to Fig. 2, thermal expansion elements 202A/202B are added to the assembly in such a manner that the thermal expansion elements 202A/202B expand as the temperature of the heat receiving plate 210 rises, thereby increasing the gap. Although the two thermal expansion elements 202A and 202B are in the shape shown, a single cylindrical structure (or other structural shape) may be employed as the thermal expansion structure. In other embodiments, more or less thermal expansion elements may be employed as desired, and the upper insulator plate may be raised or lowered as needed to achieve the desired amount.

In the example of FIG. 2, as the temperature increases, the thermal expansion element 202A/202B expands, thereby passively moving the reference mechanical support point 212 upward. The passive improvement of the reference mechanical support point 212 also passively increases the upper insulator plate 220 (because the upper insulator plate 220 is coupled to the reference mechanical support point 212 by the upper plate carrier structure 214), thereby expanding the wafer gap 222. . This expansion of the wafer gap 222 has the effect of counteracting the aforementioned temperature-driven gap narrowing effect by mechanically and passively eliminating or counteracting the temperature-driven (integral or localized) gap narrowing effect. In the example of FIG. 2, the expansion of the wafer gap 222 effectively counteracts the temperature-driven expansion of the flat carrier structure 214.

What we must note is that as the temperature of the various components in the process chamber rises, a variety of complex factors will contribute to the shrinkage of the wafer gap. One way to characterize the effect of rising temperature on the wafer gap is to empirically measure wafer gaps at various temperatures or after a certain number of operating cycles. For example, a comparison table can be generated that relates the relationship between the temperature/the number of wafers being processed in the case of wafer gap shrinkage. What has been found is that although there may be complex factors that cause changes in the wafer gap, the net shrinkage effect of the wafer gap as the temperature rises can be empirically obtained, and in this way, regardless of the processing chamber configuration Complexity, both can be measured And quantify the net reduction effect.

The quantification of the gap narrowing effect can be utilized to select the appropriate structure or shape or size of the thermal expansion element (group) to optimally offset or counteract the temperature dependent gap narrowing effect (either as desired, in whole or in part). In this way, the same temperature rises due to the expansion or elongation of the upper plate carrier structure in response to an increase in temperature (by which the wafer gap tends to be narrowed) and the heating of other process chamber elements will increase or mitigate the gap narrowing effect. The expansion of the thermal expansion element (group) is also caused to increase the reference mechanical point 212, thereby increasing the upper insulator plate 220, thereby offsetting the wafer gap reduction effect of the temperature rise.

In one or more embodiments, providing a thermal breaker will make the passive compensation configuration more efficient. In some systems, it can be appreciated that since the drive mechanism is constructed of a variety of components and is not actively heated, the temperature of these components cannot be effectively controlled. The actual temperature of these various components will be affected by the thermal resistance of the contact between the components that interact with each other depending on the component. This result is a varying amount of thermal expansion, which in some cases will be complicated to handle. By thermally insulating the drive assembly, the temperature-driven overall dimensional change is a variety of helpful gap broadening effects and gap widening effects attributable to different temperature-driven reactions of different parts and components. The sum tends to have more reproducibility with the processing room, so that it can be compensated more straightforwardly.

Referring to FIG. 2, if the entire upper plate carrier structure 214 has been allowed to expand or elongate as the temperature rises, such expansion or elongation can be partially or completely offset by driving the upper plate 220 to move downward toward the wafer. The expansion or elongation provided by the thermal expansion element 202A/202B.

By providing thermal circuit breakers 226A, 226B, and 226C and arbitrarily utilizing a suitable warming/cooling system to actively maintain a locally stable temperature of the planar carrier structure as indicated by reference numeral 214', any high temperature drive The gap change will be offset by the thermal expansion element. If the portion 214' has expanded with increasing temperature, the expanded portion 214' will again drive the gap closer, thereby undesirably at least partially or substantially defeating the function of the thermal expansion element.

In order to simplify the compensation configuration and/or to make the compensation configuration smaller and/or more efficient, It is also possible to have other process chamber components thermally insulated and/or provided with a cooling arrangement. In one or more embodiments, the drive mechanism is thermally insulated and the drive mechanism is protected from thermal expansion effects due to elevated temperatures.

In one or more embodiments, the upper plate carrier structure 214 is heated/cooled in such a manner as to ensure that the elements expand/contract at substantially the same ratio, following heating/cooling of the thermal expansion elements 202A/202B. In other embodiments, the upper plate carrier structure 214 is heated/cooled in such a manner as to ensure that these elements expand/contract at different ratios, but are still substantially sufficient to counteract the reduction/expansion of the wafer gap, so follow Heating/cooling of the thermal expansion elements 202A/202B. In one or more embodiments, the same heating/cooling liquid (such as a fluorinated liquid or other suitable heating/cooling liquid) is passed through both the upper plate carrier structure 214 and the thermal expansion elements 202A/202B,俾 can ensure that its temperature changes are essentially the same.

It must be noted that although the thermal expansion element shown is in the position of 202A/202B, it is also possible to couple the thermal expansion element to the process chamber element in other ways. As long as the thermal expansion element employed is sufficient to passively counteract the temperature-driven (partial or total) wafer gap reduction effect, the thermal expansion element can be added to any suitable location and/or to any suitable plasma processing chamber. element. For example, to compensate for the temperature-driven wafer gap reduction effect, the substrate carrier can be passively lowered rather than passively raising the upper plate. Moreover, although three thermal circuit breakers are provided, as long as they contribute to the above-described passive cancellation of the temperature-driven wafer gap reduction effect (partially or completely passively canceled by the expansion of the thermal expansion element), the thermal circuit breaker The quantity and/or cooling configuration will vary as desired.

In light of the above description, it should be understood that embodiments of the present invention advantageously and passively compensate for variations in wafer gap due to temperature variations. Embodiments of the present invention are reliably and inexpensively realized because there is no need to utilize complex active control and/or feedback structures to counteract temperature-driven wafer gap reduction effects. By mechanically offsetting the (partially or completely) wafer gap narrowing effect of the elevated temperature by utilizing the expansion properties of the thermal expansion element (group) and the simple mechanical elimination principle, no matter how the temperature changes, in order to process The result is more reproducible and predictable The embodiments of the present invention maintain the wafer gap substantially constant and/or significantly reduce the amount of narrowing of the wafer gap.

Although the present invention has been described in terms of several preferred embodiments, it is understood that all changes, modifications, and equivalents are within the scope of the invention. For example, although a specific example thereof illustrates a bevel etch processing chamber and refers to a particular method of joining the thermal expansion elements and a particular location within such a connection, it is important to understand that the present invention can equally be applied regardless of whether or not a bevel treatment is involved. It is applied to other treatments involving deposition and/or etching.

Moreover, although a specific example therein is to change the wafer gap passively to increase or decrease the components facing the substrate, it must be understood that one or more embodiments of the present invention can be applied to the following case, that is, passive The substrate carrier is raised/decreased to change the wafer gap. Further, although a specific example thereof mentions a temperature-driven gap reduction, it must be understood that the present invention can be applied to the case where the temperature-driven gap is enlarged. Thus, various alternative ways of embodying the methods and apparatus of the present invention are presented herein, which are within the scope of those of ordinary skill in the art. While various examples are presented herein, these examples are to be considered as illustrative and not restrictive.

100‧‧‧ Plasma processing room

102‧‧‧Substrate carrier

104‧‧‧ wafer

106, 220‧‧‧Upper insulator board

108‧‧‧Carrier structure

120, 222‧‧‧ wafer gap

122A, 122B‧‧‧ drive mechanism

202A, 202B‧‧‧ Thermal expansion components

110, 212‧‧‧ mechanical support points

214'‧‧‧ Part of the structure of the flat carrier

226A, 226B, 226C‧‧‧ Thermal Circuit Breakers

Figure 1 shows a simplified schematic of a typical plasma processing chamber for ease of illustration.

2 shows a simplified schematic diagram of a plasma processing chamber having a compensated configuration of a materialized passive wafer gap, in accordance with an embodiment of the present invention.

102‧‧‧Substrate carrier

104‧‧‧ wafer

122A, 122B‧‧‧ drive mechanism

202A, 202B‧‧‧ Thermal expansion components

212‧‧‧Mechanical support points

214'‧‧‧ Part of the structure of the flat carrier

220‧‧‧Upper insulator board

222‧‧‧ wafer gap

226A, 226B, 226C‧‧‧ Thermal Circuit Breakers

Claims (24)

A plasma processing system for processing a substrate, the plasma processing system having at least one processing chamber, the processing chamber having at least one substrate carrier and an element facing the substrate, the component facing the substrate facing the substrate One of the upper surfaces is spaced apart from the substrate above the substrate, during which the substrate is disposed over the top surface of the substrate carrier and is positioned on the substrate carrier Between the components of the substrate, the plasma processing system includes: a carrier structure facing the components of the substrate, coupled between the component facing the substrate and an upper processing chamber component of the plasma processing chamber, thereby The substrate-facing component is positioned above the substrate during the process, such that a desired gap exists between a lower surface of the component facing the substrate and an upper surface of the substrate; and a passive movement The device for the component facing the substrate is configured to passively move the component facing the substrate by a temperature change experienced by at least one component of the plasma processing chamber, and the component facing the substrate is not subjected to In the case of ground movement, the temperature change experienced by the at least one component will cause a change in the desired gap, and the device for passively moving the component facing the substrate is dependent on the dimensional change of the device driven by the device. Achieve the move. The plasma processing system of claim 1, wherein the substrate-facing component is an upper insulator plate, and wherein the processing chamber is a bevel etching process chamber. The plasma processing system of claim 1, wherein the component facing the substrate is an upper electrode. The plasma processing system of claim 1, wherein the substrate carrier is a lower electrode. A plasma processing system according to claim 1, wherein the change is representative, when the at least one component undergoes a rise in temperature, the required gap is reduced, and the substrate facing the substrate is passively moved. The device used for the component is used to respond to the required The gap becomes smaller to increase the components facing the substrate. The plasma processing system of claim 1, wherein the change is representative, when the at least one component undergoes a rise in temperature, the required gap is increased, and the substrate facing the substrate is passively moved. The device for the component is used to reduce the required gap and reduce the component facing the substrate. A plasma processing system of claim 1, wherein the passively moving system comprises passively moving the upper processing chamber component. The plasma processing system of claim 1, wherein the upper processing chamber component comprises a joint for joining the carrier structure of the component facing the substrate. A plasma processing system according to claim 1, wherein the means for passively moving the component facing the substrate comprises at least one thermal breaker. A plasma processing system according to claim 1, wherein the means for passively moving the component facing the substrate comprises at least one thermal expansion element. The plasma processing system of claim 1, wherein the means for passively moving the component facing the substrate comprises a plurality of thermal expansion elements for symmetrically moving the component facing the substrate in response to a temperature change. The plasma processing system of claim 1, wherein the means for passively moving the component facing the substrate is for substantially counteracting in the absence of the means for passively moving the component facing the substrate When the temperature of the at least one component rises, the required gap will undergo a change. A plasma processing system according to claim 1, wherein the means for passively moving the component facing the substrate comprises a cooling subsystem. A plasma processing system for processing a substrate, the plasma processing system having at least one processing chamber, the processing chamber having at least one substrate carrier and an element facing the substrate, the component facing the substrate facing the substrate One of the upper surfaces is spaced apart from the substrate above the substrate, during which the substrate is disposed over the top surface of the substrate carrier and is positioned on the substrate carrier Between the components of the substrate, the plasma processing system includes: a carrier structure facing the components of the substrate, coupled between the component facing the substrate and an upper processing chamber component of the plasma processing chamber, thereby The substrate-facing component is positioned above the substrate during the process, such that a desired gap exists between a lower surface of the component facing the substrate and an upper surface of the substrate; and a passive movement The substrate carrier device is configured to passively move the substrate carrier by a temperature change experienced by at least one component of the plasma processing chamber, and when the substrate carrier is not passively moved, At least one element subjected to the temperature change will cause a change required to produce the gap, the driven means moving the substrate carrier with the driving means of the heat-dependent dimensional change to achieve the movement. The plasma processing system of claim 14, wherein the substrate-facing component is an upper insulator plate, and wherein the processing chamber is a bevel etching processing chamber. The plasma processing system of claim 14, wherein the component facing the substrate is an upper electrode. A plasma processing system according to claim 14 wherein the substrate carrier is a lower electrode. A plasma processing system according to claim 14 wherein the variation is representative, when the at least one component undergoes a rise in temperature, causing the required gap to become smaller, the passively moving the substrate carrier The device is used to reduce the required gap and reduce the substrate carrier. The plasma processing system of claim 14, wherein the change is representative, when the at least one component undergoes a rise in temperature, the required gap is increased, and the substrate carrier is passively moved. The device is used to increase the gap required to increase the substrate carrier. The plasma processing system of claim 14, wherein the means for passively moving the substrate carrier comprises at least one thermal breaker. The plasma processing system of claim 14, wherein the means for passively moving the substrate carrier comprises at least one thermal expansion element. A plasma processing system according to claim 14 wherein the means for passively moving the substrate carrier comprises a plurality of thermal expansion elements for symmetrically moving the substrate carrier in response to temperature changes. The plasma processing system of claim 14, wherein the means for passively moving the substrate carrier is for substantially counteracting the absence of the device for passively moving the substrate carrier, when the at least one component When the temperature rises, the required gap will change by one. A plasma processing system according to claim 14 wherein the means for passively moving the substrate carrier comprises a cooling subsystem.