TW201304194A - Method and apparatus for manufacturing light emitting diode - Google Patents

Abstract

There is provided a method for manufacturing a light emitting diode. The method includes providing a light emitting diode having a reflective film formed on one surface of a substrate; removing part of the reflective film to expose a partial area of the substrate; and scribing the substrate by focusing a laser beam in the inside of the substrate through the exposed partial area of the substrate.

Description

Method and device for manufacturing light emitting diode

The present invention relates to a method and apparatus for fabricating a light emitting diode.

A light emitting diode (LED) is a light emitting device using a semiconductor that receives a current and a discharge light. With the latest developments in semiconductor technology, the manufacture of a high quality light-emitting diode has continued rapidly. As an example, a technique for forming a set of III-IV nitride layers on a blue substrate by a metal organic chemical vapor deposition (MOCVD) method to achieve a high-brightness blue LED is becoming popular.

One of the most important factors affecting the characteristics and performance of a light-emitting diode is brightness. In order to provide brightness or to avoid deterioration of brightness, studies on materials for light-emitting diodes, film formation methods, structures, and other improvements or improvements in processing methods or packaging methods of light-emitting diodes have been actively conducted.

As one of the methods, there is known a technique of coating one of the bottom surfaces of a light-emitting diode using an emissive film. The reflective film efficiently reflects light generated in the inner light-emitting layer of one of the light-emitting diodes, so that the deterioration of brightness after packaging is completely reduced as compared with the case where there is no reflective film.

However, if the reflective film is coated on the bottom surface of the substrate, it will be difficult to perform one of the processes for scribing or rupturing the light-emitting diodes as compared to the case without the reflective film. Here, the scribing or rupturing process means that one wafer is reconstituted as one of the wafer processes. As a scribing method or a breaking method, there is a method of mechanically breaking a light-emitting diode by using a dicing saw. However, mechanically breaking the light-emitting diode by using a cutting saw Produces a powder. Moreover, the width of one of the areas to be removed is larger, thereby reducing the overall yield.

The prior art disclosed in the present invention is described in Korean Patent Application Publication Nos. 10-2004-0010168 and 10-2004-0063128.

Accordingly, in view of the above problems, the present invention provides a method for fabricating a light emitting diode and a manufacturing apparatus thereof, which is capable of scribing or rupturing a light emitting diode having a reflective film formed on a substrate It is a wafer unit.

The present disclosure also provides a method for fabricating a light-emitting diode and a manufacturing apparatus capable of preventing deterioration of brightness, prohibiting generation of a powder, and increasing a yield.

In accordance with a first aspect of the present disclosure, a method for fabricating a light emitting diode is provided. The method includes: providing a light emitting diode having a reflective film formed on a surface of a substrate; removing a portion of the reflective film to expose a portion of the substrate; and transmitting a portion of the exposed portion of the substrate A laser beam is collected inside the substrate to scribe the substrate.

According to a second aspect of the present disclosure, there is provided an apparatus for manufacturing a light emitting diode, wherein a reflective film is formed on a surface of a substrate, the apparatus comprising: a laser source, generating a a laser beam; a stage mounted with a light-emitting diode and movable relative to the laser source; and an optical system positioned between the laser source and the stage and focusing the laser beam to the reflective film or substrate, wherein The optical system comprises: a first optical system that focuses the laser beam to the reflective film; and a second optical system that focuses the laser beam to the interior of the substrate.

According to a third aspect of the present disclosure, there is provided a method for fabricating a light-emitting diode, which transmits a laser beam to a light-emitting diode along a rupture hypothesis line, wherein a reflective film is formed On a substrate, the method comprises: removing a first step of the reflective film along the imaginary line of rupture; and illuminating a laser beam to a region where the reflective film is removed, and forming one of the laser beams to be inside the substrate to form a The phase change region is in a second step of the interior of the substrate.

According to a fourth aspect of the present disclosure, there is provided an apparatus for manufacturing a light emitting diode, the apparatus comprising: a stage provided on a frame, and the light emitting diode is mounted on the stage; a first processing unit provided on an upper side of the stage to illuminate a laser beam to the LED mounted on the stage; and a second processing unit provided on one side of the first processing unit to remove the light A reflective film on one of the polar bodies.

The present invention can provide a method for fabricating a light-emitting diode and a manufacturing apparatus thereof, which can scribe or rupture one of the reflective films to form one of the light-emitting diodes on a substrate.

The present disclosure can provide a method for manufacturing a light-emitting diode and a manufacturing apparatus capable of preventing deterioration of brightness, prohibiting generation of a powder and improving a yield without deteriorating brightness.

The present invention can provide a method for manufacturing a light-emitting diode and a manufacturing apparatus capable of being removed by using a second processing unit for removing a reflective film before performing processing using a laser beam a reflective film on one of the substrates of a light-emitting diode (a wafer used to fabricate an LED wafer), thereby avoiding the occurrence of scattering or diffuse reflection of a laser beam on the reflective film, and thus The process of over-illuminating the laser beam is not transmitted to the inside of the substrate.

The present invention can provide a method for manufacturing a light-emitting diode and a manufacturing apparatus capable of removing one impurity generated in a process of removing a reflective film from a substrate, which is used for An impurity removing unit that removes impurities generated in the process of the reflective film in the substrate, thereby avoiding contamination of a device or a stage including a light-emitting diode (a wafer for manufacturing an LED chip).

The effects disclosed by the present invention are not limited to the effects described above. The effects of the present disclosure include the inventive effects described in this file, and can be clearly inferred by those skilled in the art from the description of this file.

In the following, the embodiments explained will be described in detail with reference to the accompanying drawings, and the concept of the invention can be easily realized by those skilled in the art. However, it is to be noted that the disclosure of the present invention is not limited to the illustrated embodiments, and can be implemented in various other methods. In the figures, some components that are not directly related to the description are omitted to increase the clarity of the drawings, and the same reference numerals are used throughout the drawings.

Throughout the entire text, the terms "connected to" or "coupled to" are used to designate one element to be connected or connected to one of the other elements, and to include a component that is "directly connected or coupled to" another element. It is also the case that one element is "electrically connected or coupled to" another element through another element. Moreover, the term "comprising", used in the context, means that the presence or addition of one or more other components, steps, operations and/or components are not excluded, except for the described components, steps, operations and/or components. .

A structure in which a reflective film is formed on a substrate and one of the light-emitting diodes will be described first with reference to "Fig. 1" and "Fig. 2".

"Fig. 1" is a cross-sectional view showing a structure of one of the light-emitting diodes. "Fig. 2" is a detailed cross-sectional view showing the structure of the light-emitting diode of "Fig. 1".

As illustrated in FIG. 1, a light-emitting diode 1000 includes a reflective film 100, a substrate 110 provided on one side of the reflective film, and a functional device layer 120 provided on one of the upper sides of the substrate 110. Here, providing the substrate 110 on the upper side of the reflective film 100 does not mean that another film is not formed between the reflective film 100 and the substrate 110. Providing the functional element layer 120 on the upper side of the substrate 110 does not mean that another film is not formed between the substrate 110 and the functional element layer 120.

The reflective film 100 reflects the light generated from the inner light-emitting layer of one of the light-emitting diodes 1000 and directly directs downward to increase the light-emitting efficiency of the light-emitting diode and avoids deterioration of brightness.

As shown in FIG. 2, the reflective film 100 may include a metal layer 102 and a distributed Bragg mirror (DBR) layer 104. In the present disclosure, the reflective film 100 may include only one of the metal layer 102 and the DBR layer 104. Moreover, regardless of the type or structure, any reflective film may be the reflective film 100 if the reflective film can effectively reflect light generated from the inner luminescent layer of the light-emitting diode.

The metal layer 102 may be formed to include a metal having high reflectance, such as at least one of aluminum (Al), gold (Au), silver (Ag), titanium (Ti), platinum (Pt), and a compound thereof.

The DBR layer 104 may be formed by alternately stacking at least one pair of layers having different refractive indices. In other words, the DBR layer 104 is alternately stacked with a high refractive index layer 104a. And a low refractive index layer 104b is formed (refer to the expanded view of "Fig. 2"). The material used for the high refractive index layer 104a may be silicon nitride (Si3N4), titanium oxide (TiO2), hydrogenated silicon (Si-H), zirconium oxide (ZrO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or the like. . The material for the low refractive index 104b may be silicon dioxide (SiO2), aluminum oxide (Al2O3) or the like. However, materials for the high refractive index layer 104a and the low refractive index layer 104b are not limited thereto. The high refractive index and the low refractive index are conceptually relative, rather than through the absolute value of the refractive index.

The thickness of the high refractive index layer 104a and the low refractive index layer 104b can be determined to be such that a certain wavelength band of light is reflected to a maximum thickness. In other words, assuming that one of the wavelengths of the light is λ, and one of the medium (high refractive index layer or low refractive index layer) has a refractive index of n, the thickness of the high refractive index layer 104a and the low refractive index layer 104b can be determined as m λ/4n (here, m is an odd number). Since the difference in refractive index between the high refractive index layer 104a and the low refractive index layer 104b is large, the reflectance increases.

For the substrate 110, a transparent substrate such as sky blue can be used. However, the material used for the substrate 110 is not limited to sky blue. Without limitation, if a group of III nitride semiconductor crystals are epitaxially grown on the surface of the substrate, any substrate can be used. For example, zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), or the like can be used as the material for the substrate 110.

Functional element layer 120 can include multiple semiconductor layers and electrodes. The semiconductor layer can be formed on epitaxial growth using a metal organic chemical vapor deposition (MOCVD) method. As shown in FIG. 2, the functional device layer 120 may include an n-semiconductor layer 122, an n-electrode 122a, a light-emitting layer 124, a p-semiconductor layer 126, a p-electrode 126a, and a buffer layer 128. .

The n-semiconductor layer 122 is a semiconductor layer containing one of n-type impurities, and may be, for example, an n-GaN (n-GaN) layer. The p-semiconductor layer 126 is a semiconductor layer containing one of p-type impurities, and may be, for example, a p-gallium nitride (p-GaN) layer. The n-electrode 122a can maintain ohmic contact with the n-semiconductor layer 122. The p-electrode 126a can maintain ohmic contact with the p-semiconductor layer 126.

The luminescent layer 124 is referred to as an active layer or a quantum well layer. The luminescent layer 124 can be formed in a multi-quantum well structure in which a well layer and a barrier layer are alternately stacked (not shown). As the well layer, for example, gallium 1-y indium y (Ga1-yInyN) (0 < y < 0.4) can be used. As the barrier layer, for example, aluminum z-gallium 1-z nitrogen AlzGa1-zN (0 < z < 0.3) having a larger band gap energy than the well layer can be used.

The buffer layer 128 mitigates the difference in grating constant between one of the substrate 110 and the n-GaN layer 122 to promote the formation of a nitride having a good crystallinity on the substrate 122. For example, the buffer layer 128 may be made of undoped aluminum x gallium 1-x nitrogen AlxGa1-xN (0 x 1) formed by gallium nitride (GaN) or silicon nitride (SiN).

Next, a method for manufacturing one of the light-emitting diodes provided with a reflective film will be described with reference to "Fig. 3" to "Fig. 5".

Fig. 3 is a cross-sectional view showing one of the light-emitting diodes on which the multi-function element layer is formed. "4a" to "4d" are schematic cross-sectional views showing one of the processes of rupturing a light-emitting diode in order. Fig. 5 is a schematic cross-sectional view showing one of the methods of focusing a laser beam.

First, a light-emitting diode 1000 provided with a reflective film 100 on one surface of a substrate 1000 is provided (refer to "Fig. 3" and "Fig. 4a"). As shown in "Fig. 3", the plurality of functional element layers 120 spaced apart from each other may be formed on the substrate. On the other surface of 110. The structure of the light-emitting diode 1000 is the same as that described above. "3rd" to "figure 5" merely describe the light-emitting diode in which the reflective film 100 is in a state above the drawing. "3rd figure" and "5th figure" do not describe the functional component layer.

Next, as shown in "Fig. 4a", a laser beam L is irradiated to a focus point P on the surface of the metal layer 102. A device for illuminating the laser beam L will be described later. The thickness of the metal layer 102 and the DBR layer 104 is relatively thin compared to the substrate 110. Moreover, the metal layer 102 has a small permeability to the laser beam. Therefore, the metal layer 102 and the DBR layer 104 are processed immediately by focusing and illuminating the laser beam L on the surface of the metal layer 102.

By the irradiation of the laser beam, portions of the reflective films 102, 104 are removed as shown in "Fig. 4b". By removing portions of the reflective films 102, 104, a portion of the upper end surface of the substrate 110 is exposed.

If the distance between adjacent functional element layers is d (refer to "Fig. 3"), the width of the reflective films 102, 104 to be removed by the irradiation of the laser beam may be less than d. If the width of the removed reflective films 102, 104 is larger than d, the surface to be reflected is reduced, so that the luminous efficiency and the brightness of the manufactured light-emitting diode 1000 are finally deteriorated. The width of the reflective films 102, 104 is preferably as small as possible so as not to cause any problems in subsequent processes.

Next, as shown in "Fig. 4c", the exposed portion of the laser beam L passing through the substrate 110 is focused on one of the focal points P inside the substrate 110, thereby scribing the substrate 110. By irradiating the laser beam L to the inside of the substrate 110, the brightness deterioration of the light-emitting diode 1000 is avoided relative to the irradiation of a laser beam on the surface or the back surface of the substrate 110, thereby increasing the luminous efficiency and inhibiting the generation of the powder. And improve the production the amount.

Here, the process of focusing the laser beam to the inside of the substrate 110 to scribe the substrate 110 may be a process of forming a phase change region by irradiating the laser beam L to the focus point P inside the substrate 110.

The phase change region is formed at or near the focus point P at which the laser beam L is irradiated in the substrate 110. If the focus point is located inside the substrate 110 that is clearly spaced from the surface or the other surface of the substrate 110, the phase change region may be formed only inside the substrate 110. Since the crack grows from the phase change region toward one of the surface of the substrate or the other surface, the phase change region may be a starting point for one of the scribe lines or the rupture substrate.

Finally, as shown in "Fig. 4d", the substrate 110 is spaced apart, and the light emitting diode 1000 can be split into two reflective diode wafers 1000a, 1000b. With this method, the light emitting diode 1000 provided with the reflective film 100 can be efficiently manufactured.

At the same time, in the process shown in FIG. 4c, that is, the process of focusing the laser beam L through the exposed region of the substrate 110 to the inside of the substrate 110 by scribe the substrate 110 may be one of the processes of the self-rupturing substrate 110. If the self-rupture is performed, the substrate 110 is separated only by the scribing process without requiring an external force or using only a small external force. Here, "self-breaking" should be interpreted as including the case where one of the cracks generated in the phase change region inside the substrate 110 is spread to reach the surface or the back surface of the substrate 110, and the substrate 110 is completely broken. Moreover, the crack propagation is relatively close to the surface or the back surface of the substrate 110, even when the surface or the back surface of the substrate 110 is not reached, or the portion of the crack reaches the surface of the substrate 110. The face or the back, and the other portion of the crack does not reach the surface or the back of the substrate 110.

Meanwhile, after the process of scribing the substrate 110, a process of rupturing the substrate 110 by applying an external force can be further performed. If the substrate 110 is in a state of being self-ruptured, the rupture process can be performed using only a very small external force.

After the process of removing portions of the reflective films 102, 104 to expose a portion of the substrate 110, cleaning or processing one of the surfaces of the exposed portions of the substrate 110 may be further performed. For example, a suction process or a cleaning process that removes the powder generated by the metal layer 102 or other removal can be performed. For example, one of the processes of treating the exposed surface of the substrate 110 can be performed to enable the laser beam to be easily illuminated to the inside of the substrate 110.

A process of illuminating a laser beam to a point along the thickness of the substrate 110 has been described. However, the disclosure of the present invention is not limited to the embodiment. For example, as shown in "Fig. 5", the laser beam can be irradiated to the two focus points P1 and P2 in the direction of the thickness of the substrate 110. This technique promotes scribing and cracking in the case where the substrate 110 is thick. Also, at least 3 focus points can be provided. The thickness direction position and the focus order for one of the plurality of focus points may be appropriately selected depending on the processing conditions.

Next, an apparatus for manufacturing a light-emitting diode provided with a reflective film will be described with reference to "Fig. 6" to "Fig. 10".

"Picture 6" is a schematic structural view of one of the devices for manufacturing a light-emitting diode. Fig. 7 is a schematic view showing the structure of one of the first embodiments for manufacturing a light-emitting diode. "Fig. 8a" is a structural diagram of one of the first optical systems of the manufacturing apparatus of "Fig. 7". "Figure 8b" is the manufacture of "Figure 7" One of the second optical systems of the device is a structural diagram. "Fig. 9" and "Fig. 10" are schematic structural views of a second embodiment of one of the devices for manufacturing a light-emitting diode.

As shown in FIG. 6, an apparatus 2000 for manufacturing a light-emitting diode may include a laser source 210, an optical system 220, a stage 230, and a controller 240.

Laser source 210 is one that produces a laser beam L1. The laser source 210 can be a carbon dioxide (CO2) laser having a Gaussian beam profile, a quasi-molecular laser, or a diode-pumped solid state (DPSS) laser. The laser beam L1 can be a pulsed laser beam, especially an ultrashort wave pulsed laser beam. Here, the ultrashort wave pulse laser is one of the light pulse cycles having one nanosecond, one picosecond or one femtosecond, and can process the foil-shaped light emitting diode 1000 with high precision. In particular, the ultrashort wave pulsed laser is effective in forming a portion of the substrate of the light emitting diode 1000.

The optical system 220 is located between the laser source 210 and the stage 230, and converts the laser beam L1 from the laser source 210 into one of the reflective film 100 or the substrate 110 to be focused to the light emitting diode 1000. Laser beam L2. In other words, the optical system 220 transmits the laser beam therethrough and adjusts the characteristics of the laser beam, one way, and the like. The optical system 220 can include optical elements such as a beam trap, an attenuator, a beam shaping module, and a focusing lens arranged along one of the optical axes of the laser beam. A detailed description of the components will be described later.

The stage 230 mounts the light emitting diode 1000 at a top end portion thereof and is movable relative to the laser source 210. In other words, the stage 230 rises, descends, moves forward and backwards relative to the laser source 210, or rotates, and the laser beam can be focused at one of the appropriate positions of the light emitting diode 1000.

Controller 240 is electrically coupled to laser source 210, optical system 220, and stage 230 to control them. Information and a command signal are communicated and received between controller 240 and laser source 210 to perform various processes with respect to laser source 210. Information and an instruction signal are transmitted and received between the controller 240 and the optical system 220 to perform various processes such as adjusting the distance between a cylindrical concave lens and a cylindrical convex lens (described later) to modify the laser beam. A divergence angle. Information and an instruction signal are transmitted and received between the controller 240 and the stage 230 to perform various processes such as adjusting the distance between the optical system 220 and the stage 230 to adjust one of the focus points within the substrate 110.

Referring to "FIG. 7", the optical system 220 can include a first optical system 220a and a second optical system 220b. The first optical system 220a focuses one of the laser beams transmitted from the laser source 210 to one of the first light-emitting diodes 1000a held by the first stage 230a. The second optical system 220b focuses on one of the laser beams transmitted from the laser source 210 to the inside of one of the substrates of the second light-emitting diode 1000b held by the second stage 230b.

The first optical system 220a includes reflecting a portion of the laser beam transmitted from the laser source 210 to the first stage 230a, and passing other portions of the laser beam transmitted from the laser source 210 through the second optical system 220b. One of the beam splitters 260. The first optical component unit 280 is the other optical component that excludes the first optical system 220a of the beam splitter 260. The laser beam that has passed through the beam splitter 260 is transmitted to the second stage 230b via a mirror 270 and a second optical element unit 290. The second optical component unit 290 is the other optical component that excludes the second optical system 220b of the mirror 270.

Referring to "Fig. 8a", the first optical component unit 280 may include: receiving a lightning a first beam trap 282 of one of the laser beams generated in the source 210, a first attenuator 284 receiving the laser beam from the first beam trap 282, receiving from the first attenuator A homogenizer 286 of the laser beam of 284, and a first focusing lens 288 that receives the laser beam from the homogenizer 286 to focus the laser beam onto the reflective film of the first light emitting diode 1000a.

The first beam trap 282 is an optical element that absorbs the laser beam. The first attenuator 284 is an optical element that regulates one of the output powers of the laser beam. The homogenizer 286 is an optical element that equalizes the energy distribution of the laser beam. Since the configuration of the components is generally known, its detailed description is omitted here. The first attenuator 284 can include an attenuator 284a and a compensator 284b.

Referring to "Fig. 8b", the second optical component unit 290 can include a second beam trap 292 that receives one of the laser beams generated in the laser source 210, and receives the second beam trap 292 from the second beam trap 292. a second attenuator 294 of the laser beam, a beam shaping module 296 that receives the laser beam from the second attenuator 294, and a laser beam received from the beam shaping module 296 to focus the laser beam A second focusing lens 298 on the reflective film of the two LEDs 1000b. The second attenuator 294 can include an attenuator 294a and a compensator 294b.

Since the second beam trap 292 is similar in structure to the first beam trap 282, the second attenuator 294 is similar in structure to the first attenuator 284, which is similar in structure to the second focus lens 298. A focusing lens 288, the details of which are omitted here.

The beam shaping module 296 is an optical component that modifies one of the divergence angles of the laser beam. Since the laser beam has a single wavelength and collimation compared to ordinary light, the laser beam It does not propagate parallel to an optical axis and goes straight. However, since the laser beam has one of the properties of the wave, the laser beam is affected by diffraction and thus has an angle of a divergence angle. The beam shaping module 296 changes the divergence angle of the laser beam and appropriately adjusts a point formed inside the substrate of the second light emitting diode 1000b, and thus, for example, self-breaking can be easily performed.

As shown in FIG. 8b, the beam shaping module 296 can include a cylindrical concave lens 296a that disperses a laser beam, and a cylindrical convex lens 296b that modifies a divergence angle of one of the laser beams that have passed through the cylindrical concave lens 296a. . By using the cylindrical concave lens 296a and the cylindrical convex lens 296b, the divergence angle of the laser beam is changed to one of the elements in one direction to be performed. Therefore, in one of the points, only the size of the point along a certain axis direction is changed.

Conversely, the beam shaping module 296 can include a spherical concave lens that disperses a laser beam, modifies a first cylindrical convex lens that is one of the divergence angles of the laser beam that has passed through the spherical concave lens in a first direction, and changes A second cylindrical convex lens having passed through a diverging angle of the laser beam of the first cylindrical convex lens in a second direction (not shown). Here, the first direction and the second direction are substantially perpendicular to each other. By using the spherical concave lens, the first cylindrical convex lens, and the second cylindrical convex lens, the divergence angle of the laser beam is changed to the two-direction element to be performed. Therefore, in one of the points, the size of the point along a certain two axis directions is changed.

Meanwhile, although shown here, the second optical element unit 290 may further include a diffraction grating of one of the diffraction laser beams. The diffraction grating can be located between the laser beam source 210 and the beam shaping module 296 or between the beam shaping module 296 and the second focusing lens 298. A diffraction grating is introduced, which is formed in the light emitting diode 1000 The point in the interior of the substrate can contain a plurality of very small points. If a plurality of minimum points are formed, the main axial length of the points is substantially maintained while the size of the phase change area is reduced. Therefore, the self-rupture of the substrate of the light-emitting diode 1000 is more easily performed without lowering the scribe line or the rupture speed of the light-emitting diode 1000.

Next, a second embodiment of an apparatus for manufacturing a light-emitting diode will be described with reference to "Fig. 9" and "10th figure". The same structural elements as described in the embodiments described above are denoted by the same reference numerals as used in the embodiments described above. Overlapping descriptions of the same structure are omitted.

The apparatus 2000 for manufacturing a light-emitting diode may include multiple laser sources such as a first laser source 210a and a second laser source 210b as set forth in "Fig. 9". One of the laser beams generated in the first laser source 210a is delivered to the first optical system 220a. One of the laser beams generated in the second laser source 210b is delivered to the second optical system 220b. By using multiple laser sources, a light source suitable for removing a reflective film or a scribe line (breaking) substrate of the light-emitting diode can be selected.

At the same time, the first optical system and the second optical system can share all or part of the optical component. For example, as shown in FIG. 10, the laser beam generated in the first laser source 210a and the laser beam generated in the second laser source 210b can be transmitted through the same optical system 220. To the light emitting diode 1000.

Meanwhile, hereinafter, a method for manufacturing one of the light-emitting diodes and one method for manufacturing one light-emitting diode will be described by using the apparatus according to another embodiment of the present disclosure.

As shown in "11th" and "12th", the wafer 10 for manufacturing an LED chip (since the state before a wafer is recombined into a wafer, the wafer corresponds to The light-emitting diodes, which will be collectively referred to as a light-emitting diode, may be configured by a substrate 11 formed of sky blue, a multiple nitride layer 12 stacked on the substrate 11, and a nitride layer formed thereon. The reflective film 13 is formed on one of the other surfaces of the substrate 11 on which the surface of the substrate 11 is stacked.

The nitride layer 12 can be formed by using, for example, a metal organic chemical vapor deposition (MOCVD) method. The nitride layer 12 may be formed of an n-GaN layer 12a, an indium gallium nitride (InGaN) layer 12b, and a p-GaN layer 12c. In order to improve grating matching between the substrate 11 and the n-GaN layer 12a, an undoped GaN layer may be formed between the substrate 11 and the n-GaN layer 12a.

The reflective film 13 may be formed to include at least one of a dispersion Bragg mirror (DBR) and a metal, and has a structure including one layer of a dispersion Bragg mirror and one layer including one layer of a metal stacked thereon. As the metal suitable for the reflective film 13, a metal containing silver (Ag), aluminum (Al), nickel (Ni), or chromium (Cr) having good reflectance can be used. The reflective film 13 can be formed on the other surface of the substrate 11 by coating or deposition. The reflective film 13 reflects the light emitted from the InGaN layer 12b of a luminescent material to avoid leakage of light. The light-emitting diode 10 is divided into a plurality of LED chips by a process along one of the rupture hypothetical line B-line diodes, and then the diode is ruptured.

As shown in FIG. 13, a device for manufacturing a light-emitting diode according to a third embodiment (laser processing apparatus) can be formed to include a frame 20, provided on the frame 20, and a light-emitting diode. The body 10 is mounted on one of the stage 30, provided on one of the upper sides of the stage 30 to illuminate a laser beam to a first processing unit 40 of the light-emitting diode 10 mounted on the stage 30, and provided at the first One side of the processing unit 40 The second processing unit 50 of one of the reflective films 10 on the light-emitting diode 10 is removed.

The first processing unit 40 can be configured to include a laser source 41, one of the laser beam shaping modules 42 provided on one side of the laser source 41, and one side of the laser beam shaping module 42. A focusing lens 43. In "Fig. 13", the laser source 41, the laser beam shaping module 42, and the focus lens 43 are vertically arranged from the upper side of the stage 30. However, the laser source 41, the laser beam shaping module 42 and the focusing lens 43 can be arranged in a horizontal direction or in any other direction through an optical system such as a reflecting mirror.

The laser source 41 can be a solid laser, a gas laser or a liquid laser. Preferably, the laser source 41 can have a Gaussian beam profile. For example, the laser source 41 can be a solid laser such as a neodymium-yttrium aluminum garnet (Nd-YAG) laser. In addition to the Nd-YAG laser, a CO2 laser, a pseudo-molecular laser, a DPSS or others can be used.

The laser beam shaping module 42 modifies the divergence angle of the laser beam and can be configured by a cylindrical concave lens 421 and a cylindrical convex lens 422.

The focusing lens 43 focuses the laser beam corrected in the laser beam shaping module 42 to form a point P in the interior of the substrate 11. A phase change region T is formed in the inside of the substrate 11 through a point P formed inside the substrate 11.

Meanwhile, a driving unit 60 may be provided between the frame 20 and the stage 30 to move the stage 30. The driving unit 60 can move the light emitting diode 10 in a horizontal direction. Therefore, in a state where the laser beam is directed to the light-emitting diode 10, the driving unit 60 can continuously or intermittently move the light-emitting diode 10 in a horizontal direction. The drive unit 60 can move the stage 30 in a vertical direction. So the laser beam is about to be or is being focused on In the state of the inside of the substrate, the driving unit 60 can continuously or intermittently move the light emitting diode 10 in a vertical direction.

The second processing unit 50 may be configured to: generate an ultrasonic oscillator 51 having one of electric powers of a variety of frequencies, receive an electric power from one of the ultrasonic oscillators 51 to vibrate one of the ultrasonic vibrators 52, and connect to the ultrasonic waves The vibrator 52 is also provided to face one of the light-emitting diode removing elements 53, and the removing element 53 is vibrated by the vibration of the ultrasonic vibrator 52, thereby removing the reflective film 13 on the substrate 11.

The ultrasonic oscillator 51 is configured to provide an electrical power to the ultrasonic vibrator 52 having a certain inaudible frequency. The ultrasonic vibrator 52 has, for example, a piezoelectric vibrator to convert electrical energy into physical energy. The physical energy is delivered to the removal element 53 that is coupled to the ultrasonic vibrator 52. The physical energy transferred to the removing element 53 is transferred to the reflective film 13 on the substrate 11, and the reflective film 13 can be removed from the substrate 11.

The removing member 53 may be formed in contact with the reflective film 13 and having the same shape of one of the sharp portions.

Hereinafter, a method for rupturing the light-emitting diode 10 by using a device for manufacturing a light-emitting diode (laser processing device) according to the third embodiment will be referred to "14th to 19th". It is described.

As shown in Fig. 14, once the light-emitting diode 10 is mounted on the stage 30, the removing element 53 of the second processing unit 50 is located on the reflective film 13 which is about to be on the broken line B of the light-emitting diode 10. contact. In order to enable the removing element 53 to be located on the light-emitting diode 10, in a state where the position of the second processing unit 50 is stopped, the stage 30 can be traversed in a horizontal direction and/or a vertical direction through the operation of the driving unit 60. Move in a straight direction.

In this state, once the ultrasonic oscillator 51 is operated and the ultrasonic vibrator 52 vibrates, the removing element 53 vibrates to remove the reflective film 13 located on the fracture hypothesis line B. In this case, the light-emitting diode 10 is moved in a horizontal direction so that the removing element 53 can follow the trail of the broken hypothetical line B. To this end, the stage 30 can be moved in a horizontal direction by the operation of the driving unit 60. In the process of removing the reflective film 13, the removing member 53 can be moved relative to the light emitting diode in an upward direction and a downward direction to correspond to the thickness of the reflective film 13. To this end, the stage 30 can be moved in a vertical direction by the operation of the driving unit 60. As shown in Fig. 15, after the operation of removing the reflective film 13 along the rupture hypothesis line B is completed, the substrate 11 of the illuminating diode 10 is exposed outwardly to one of the reflective film removal regions A along the rupture. It is assumed to be formed by line B.

As shown in Fig. 16, the first processing unit 40 is located at a position where the laser beam can be irradiated onto the reflection film removal area A on the fracture hypothesis line B. For the position adjustment of the first processing unit 40, in a state where the position of the first processing unit 40 is stopped, the stage 30 can be moved in a horizontal direction and/or a vertical direction by the operation of the driving unit 60.

In this state, once a laser beam is emitted from the laser source 41, the emitted laser beam is corrected in the laser beam shaping module 42 and is focused by the focus lens 43. Thereafter, the laser beam is irradiated to the inside of the substrate 11 through the reflective film removal region A. In this case, the laser beam forms a point P in the interior of the substrate 11, and a phase change region T is formed at or around the point P. As shown in "17th to 19th", once the stage 30 is moved in a horizontal direction by the operation of the driving unit 60, The LEDs 10 are moved such that the laser beam follows the trace of the rupture hypothetical line B. Therefore, the phase change region T can be continuously formed along the fracture assumed line B. Therefore, the light-emitting diode 10 can be separated or broken using only a small external force.

The apparatus (laser processing apparatus) for manufacturing a light-emitting diode according to the third embodiment has a second processing unit 50 that removes the reflective film 13 formed on the substrate 11 of the light-emitting diode 10. And removing the reflective film 13 before performing the processing using the laser beam, thereby preventing the occurrence of scattering or diffuse reflection of the laser beam on the reflective film 13, and thus in the process of irradiating the laser beam for processing without It is transferred to the substrate 11.

Hereinafter, a device for manufacturing a light-emitting diode (laser processing apparatus) according to a fourth embodiment will be described with reference to "20th drawing". The same structural elements as described in the third embodiment are denoted by the same reference numerals as used in the third embodiment, and the detailed description of the same structural elements will be omitted.

As shown in FIG. 20, a device for manufacturing a light-emitting diode (laser processing apparatus) according to a fourth embodiment may include an impurity removing unit 70 provided adjacent to one of the second processing units 50. To remove one of the impurities generated in the process of removing the reflective film. The impurity removal unit 70 may be provided in conjunction with the second processing unit 50. In the second processing unit 50, the impurity removing unit 70 may be provided as a separate device.

The impurity removing unit 70 may include: a suction port 71 provided adjacent to one of the removing units 53 facing the light emitting diode 10 and sucking one of the impurities, a channel 72 connected to one of the sucking openings 71, and a channel 72 connected thereto A negative pressure source 73. A filter 74 is preferably provided between the passage 72 and the negative pressure source 73 for Filter the sucked impurities.

The apparatus for manufacturing a light-emitting diode (laser processing apparatus) according to the fourth embodiment can suck and remove impurities containing the reflective film 13 which may be generated in the process of removing the reflective film 13. Therefore, it can prevent the apparatus including the light-emitting diode 10 and the stage 30 from being contaminated.

Hereinafter, a device for manufacturing a light-emitting diode (laser processing apparatus) according to a fifth embodiment will be described with reference to "21st drawing". The same structural elements as described in the third embodiment are denoted by the same reference numerals as used in the third embodiment, and the detailed description of the same structural elements will be omitted.

As shown in FIG. 21, a device for manufacturing a light-emitting diode (laser processing apparatus) according to the fifth embodiment may include an impurity removing unit 80 provided adjacent to one of the second processing units 50, To remove one of the impurities generated in the process of removing the reflective film. The impurity removal unit 80 may be provided in conjunction with the second processing unit 50. In the second processing unit 50, the impurity removing unit 80 may be provided as a separate device.

The impurity removing unit 80 may be configured to include a magnetic element 81 provided at a position adjacent to one of the removing units 53 facing the light emitting diode 10. The magnetic member 81 absorbs the removed reflective film 13 by using a magnetic property, and the magnetic member 81 may be a permanent magnet or an electromagnet. If the magnetic element 81 is an electromagnet, a power source 82 can be connected to the magnetic element 81.

The apparatus (laser processing apparatus) for manufacturing a light-emitting diode according to the fifth embodiment can absorb and remove the reflective film 13 produced in the process of removing the film 13 by using a magnetic property. Therefore, it can avoid the inclusion of the light-emitting diode 10 The apparatus of the stage 30 is contaminated by the removed reflective film 13.

The technical concepts described in this embodiment can be implemented independently or in their combined form. Each of the embodiments has described an apparatus (laser processing apparatus) for manufacturing a light-emitting diode for performing processing on one of wafers for manufacturing a light-emitting diode (LED) wafer. However, the apparatus for manufacturing a light-emitting diode according to an embodiment (laser processing apparatus) can be applied to a wafer formed by irradiating a laser beam to a reflective film in addition to a wafer for manufacturing an LED chip. One of the processing devices is performed on the various semiconductor substrates.

The disclosed embodiments of the present invention have been described, however, the disclosure of the present invention is not limited to the embodiments. It will be apparent to those skilled in the art that various substitutions, changes and modifications can be made without departing from the technical concepts defined in the claims.

10‧‧‧Light Emitting Diodes / Wafers

11‧‧‧Substrate

12‧‧‧ nitride layer

12a‧‧‧n-GaN layer

12b‧‧‧Indium gallium nitride layer

12c‧‧‧p-GaN layer

13‧‧‧Reflective film

20‧‧‧ box

30‧‧‧Mirror

40‧‧‧First Processing Unit

41‧‧‧Laser source

42‧‧‧Laser Beam Shaping Module

43‧‧‧focus lens

50‧‧‧Second processing unit

51‧‧‧ Ultrasonic Oscillator

52‧‧‧ ultrasonic vibrator

53‧‧‧Removing components

60‧‧‧ drive unit

70‧‧‧ impurity removal unit

71‧‧‧Sucking opening

72‧‧‧ channel

73‧‧‧Negative pressure source

74‧‧‧Filter

80‧‧‧ impurity removal unit

81‧‧‧Magnetic components

82‧‧‧Power supply

100‧‧‧reflective film

102‧‧‧metal layer

104‧‧‧Distributed Bragg mirror layer

104a‧‧‧High refractive index layer

104b‧‧‧low refractive index layer

110‧‧‧Substrate

120‧‧‧Functional element layer

122a‧‧n-electrode

122‧‧‧n-semiconductor layer

124‧‧‧Lighting layer

126a‧‧‧p-electrode

126‧‧‧p-semiconductor layer

128‧‧‧buffer layer

210‧‧‧Laser source

210a‧‧‧first laser source

210b‧‧‧second laser source

220‧‧‧Optical system

220a‧‧‧First optical system

220b‧‧‧Second optical system

230‧‧‧Mirror

230a‧‧‧first stage

230b‧‧‧Second stage

240‧‧‧ Controller

260‧‧‧beam splitter

270‧‧‧Mirror

280‧‧‧First optical component unit

282‧‧‧First beam trap

284‧‧‧First attenuator

284a‧‧‧Attenuator

284b‧‧‧ compensator

286‧‧‧Homogenizer

288‧‧‧First focusing lens

290‧‧‧Second optical component unit

292‧‧‧Second beam trap

294‧‧‧second attenuator

294a‧‧‧Attenuator

294b‧‧‧ compensator

296‧‧‧beam shaping module

296a‧‧‧ cylindrical concave lens

296b‧‧‧ cylindrical convex lens

298‧‧‧Second focusing lens

421‧‧‧ cylindrical concave lens

422‧‧‧ cylindrical convex lens

1000‧‧‧Lighting diode

1000a‧‧‧Reflective Diode Wafer

1000b‧‧‧Reflective Diode Wafer

2000‧‧‧ Equipment

A‧‧‧Reflective film removal area

D‧‧‧distance

B‧‧‧Fracture hypothesis line

L‧‧‧Laser beam

L1‧‧‧Laser beam

L2‧‧‧Laser beam

P‧‧‧ Focus point

P1‧‧‧ Focus point

P2‧‧‧ Focus point

T‧‧‧ phase change area

1 is a schematic cross-sectional view showing one of the structures of a light-emitting diode; FIG. 2 is a detailed cross-sectional view showing the structure of the light-emitting diode of FIG. 1; and FIG. 3 is a view showing the formation of a multi-functional element layer. A cross-sectional view of one of the light-emitting diodes thereon; FIGS. 4a to 4d are schematic cross-sectional views showing one of the processes of rupturing a light-emitting diode in sequence; and FIG. 5 is for focusing a laser beam. One of the methods is a schematic cross-sectional view; and FIG. 6 is a schematic structural view of one of the devices for manufacturing a light-emitting diode; Figure 7 is a schematic structural view of one of the first embodiments of the apparatus for manufacturing a light-emitting diode; Figure 8a is a structural view of one of the first optical systems of the manufacturing apparatus of Figure 7; The figure is a structural diagram of one of the second optical systems of the manufacturing apparatus of FIG. 7; and FIG. 9 and FIG. 10 are structural diagrams of one of the second embodiments of the apparatus for manufacturing a light-emitting diode; Figure 11 is a perspective view of one of the wafers for fabricating an LED chip (light-emitting diode); and Figure 12 is a cross-sectional view of one of the wafers for fabricating an LED chip (light-emitting diode) Figure 13 is a schematic diagram of one of the devices (laser processing equipment) for manufacturing a light-emitting diode according to a third embodiment; and Figures 14 to 15 are used for manufacturing the third A second processing unit of a device (laser processing device) of a light-emitting diode, which removes the performance of a reflective film for one of the wafers for manufacturing an LED chip (light-emitting diode); Figure 16 is the first through the use of one of the devices (laser processing equipment) for manufacturing the light-emitting diode of Figure 13 A schematic diagram of the performance of irradiating a laser to a wafer for fabrication of an LED chip (light emitting diode); FIGS. 17 to 19 are diagrams for use in fabricating one of the illuminations of FIG. A device of a polar body (laser processing device), which forms a phase change region by breaking a hypothetical line on one of the wafers fabricated on an LED chip (light emitting diode) 20 is a schematic diagram of a second processing unit and a shameless removal unit of a laser processing apparatus (a device for manufacturing a light emitting diode) according to a fourth embodiment; and FIG. 21 It is a schematic diagram of a second processing unit and a shameless removal unit, which is one of the laser processing apparatuses (devices for manufacturing a light-emitting diode) according to a fifth embodiment.

1000‧‧‧Lighting diode

102‧‧‧metal layer

104‧‧‧Distributed Bragg mirror layer

110‧‧‧Substrate

P1‧‧‧ Focus point

P2‧‧‧ Focus point

L‧‧‧Laser beam

Claims (26)

A method for manufacturing a light emitting diode, the method comprising: providing a light emitting diode having a reflective film formed on a surface of a substrate; removing a portion of the reflective film to expose the substrate a portion of the region; and scribing the substrate by concentrating a laser beam on the portion of the substrate exposed to the interior of the substrate. The method for manufacturing a light-emitting diode according to claim 1, wherein the reflective film comprises a distributed Bragg mirror (DBR) layer or a metal layer. The method for manufacturing a light-emitting diode according to claim 1, wherein the mutually spaced functional element layers are formed on the other surface of the substrate, and the portion of the reflective film is removed to expose the substrate. The width of the reflective film to be removed by the process of one of the partial regions is less than the distance between adjacent functional device layers. The method for manufacturing a light-emitting diode according to claim 1, wherein the process of marking the substrate is to irradiate a laser beam to a focus point of the inside of the substrate to form a phase change region. A process. The method for manufacturing a light-emitting diode according to claim 4, wherein the phase change region is formed only inside the substrate, and a crack is from the phase change region toward a surface of the substrate or another a surface long. The method for manufacturing a light-emitting diode according to claim 1, wherein the method further comprises: after the process of removing a portion of the reflective film to expose a portion of the substrate, cleaning or processing the method The surface of the portion of the substrate that is exposed. The method for manufacturing a light-emitting diode according to claim 1, wherein the process of marking the substrate is a process of self-rupturing the substrate. The method for manufacturing a light-emitting diode according to claim 1, wherein the method further comprises: after the process of marking the substrate, applying an external force to the substrate to rupture the substrate. An apparatus for manufacturing a light-emitting diode, wherein a reflective film is formed on a surface of a substrate, the device comprising: a laser source for generating a laser beam; and a stage for loading the light-emitting diode a pole body movable relative to the laser source; and an optical system positioned between the laser source and the stage and focusing the laser beam to the reflective film or the substrate, wherein the optical system comprises a first optical system for focusing the laser beam to the reflective film, and a second optical system for focusing the laser beam to the interior of the substrate. The apparatus for manufacturing a light-emitting diode according to claim 9, wherein the reflective film comprises a distributed Bragg mirror (DBR) layer or a Metal layer. The apparatus for manufacturing a light-emitting diode according to claim 9, wherein the laser source is a carbon dioxide (CO ₂ ) laser source having a Gaussian beam profile, a quasi-molecular laser source, and Any one of a diode-pumped solid state (DPSS) laser source. The apparatus for manufacturing a light-emitting diode according to claim 9, wherein the laser source comprises a first laser source and a second laser source, which are generated in the first laser source One of the laser beams is delivered to the first optical system, and one of the laser beams generated in the second laser source is delivered to the second optical system. The apparatus for manufacturing a light-emitting diode according to claim 9, wherein the first optical system and the second optical system share all or part of the optical element. The apparatus for manufacturing a light-emitting diode according to claim 9, wherein the first optical system comprises: a first beam trap, which receives a mine generated in the laser source a first attenuator for receiving a laser beam from the first beam trap; a homogenizer for receiving a laser beam from the first attenuator; and a first focusing lens A laser beam from the homogenizer is received to focus the laser beam onto the reflective film. The apparatus for manufacturing a light-emitting diode according to claim 9 of the claim, Wherein the second optical system comprises: a second beam trap for receiving one of the laser beams generated in the laser source; and a second attenuator for receiving the second beam trap a laser beam; and a beam shaping module for receiving a laser beam from the second attenuator; and a second focusing lens for receiving a laser beam from the beam shaping module to focus the laser beam The bundle is placed inside the substrate. The apparatus for manufacturing a light-emitting diode according to claim 15, wherein the beam shaping module comprises: a cylindrical concave lens that diverges the laser beam; and a cylindrical convex lens that has passed the modification One of the laser beams of the cylindrical concave lens has a divergence angle. The apparatus for manufacturing a light-emitting diode according to claim 15, wherein the beam shaping module comprises: a spherical concave lens that diverges the laser beam; and a first cylindrical convex lens that is along a The first direction changes a divergence angle of the laser beam that has passed through the spherical concave lens; and a second cylindrical convex lens changes one of the laser beams that have passed through the first cylindrical convex lens in a second direction a divergence angle, wherein the first direction and the second direction are substantially perpendicular to each other. The apparatus for manufacturing a light-emitting diode according to claim 15, wherein the second optical system further comprises a diffraction grating of a diffraction beam, and the diffraction grating is located at the laser source and Between the beam shaping modules or between the beam shaping module and the second focusing lens. A method for fabricating a light-emitting diode, transmitting a laser beam to a light-emitting diode along a rupture hypothesis line, wherein a reflective film is formed on a substrate, the method comprising: along the rupture Assuming that the line removes one of the first steps of the reflective film; and irradiating a laser beam to the region where the reflective film is removed, and forming one of the laser beams to be inside the substrate to form a phase change region on the substrate The second step of one of the internals. The method for manufacturing a light-emitting diode according to claim 19, wherein the first step removes the reflective film by using ultrasonic vibration. The method for manufacturing a light-emitting diode according to claim 19, wherein the first step comprises removing impurities having the removed reflective film. An apparatus for manufacturing a light-emitting diode, the apparatus comprising: a stage provided on a frame, and the light-emitting diode is mounted on the stage; a first processing unit is provided on the stage One of the upper sides to illuminate a laser beam to the light-emitting diode mounted on the stage; and a second processing unit provided on one side of the first processing unit to remove one of the light-emitting diodes Reflective film. The apparatus for manufacturing a light-emitting diode according to claim 22, wherein the second processing unit comprises: an ultrasonic oscillator that generates electric power having one of various frequencies; and an ultrasonic vibrator that receives The electric power from the ultrasonic oscillator vibrates; and a removing element is coupled to the ultrasonic vibrator and is provided to face the light emitting diode and vibrate through the vibration of the ultrasonic vibrator to remove the reflective film. The apparatus for manufacturing a light-emitting diode according to claim 22, wherein the apparatus further comprises an impurity removing unit provided adjacent to the second processing unit to remove the reflection Impurities generated in the process of the film. The apparatus for manufacturing a light-emitting diode according to claim 24, wherein the impurity removing unit comprises: a sucking opening provided at a position adjacent to the removing element; and a negative pressure source, It is connected to the sucking opening through a passage. The apparatus for manufacturing a light-emitting diode according to claim 24, wherein the impurity removing unit comprises a magnetic element provided adjacent to a position of the removing element.