201250676 六、發明說明： 【發明所屬之技術領域】 本案係關於一種具垂直磁異向性之硬磁性合金薄膜，尤指一 種非磊晶機制成長具垂直磁異向性之硬磁性合金薄膜。 【先前技術】 傳統硬碟機均採用水平記錄(丨ongimdinal recording)的方式來 記錄資料，但水平記錄媒體因相鄰記錄位元的磁化方向為反向排 列，且受超順磁極限的限制，當記錄密度提升到某一程度後，寫 入的資料會因熱的不穩定性，而容易消失，致無法達到超高記錄 密度的需求。而所謂垂直記錄(perpendicular recording)係指記錄媒 體的磁化方向垂直於膜面，由於具有較小的消磁場(demagnetizing field，Hd)及較厚的記錄層，因此被認為是可以克服水平記錄熱 不穩定性的缺點，繼續提升記錄密度的方法。此外由於垂直記錄 之磁化方向和膜面垂直，故彼此間的磁力線互相平行，但方向相 反，不會造成磁力線互相排斥，磁力線密度較高，因此可達到更 1¾的線記錄密度。 採用垂直磁記錄技術被預期可將記錄密度提高至兆位元(1 Tb/in2)以上。然而欲使FePt合金應用於垂直磁記錄媒體，（〇〇1)結 晶面必須平行膜面才可得到[〇〇1]之垂直磁異向性，而fct (face-centered tetragonal)結構的FePt薄膜之(in)能量最低，使得 FePt薄膜退火後通常傾向(111)從優取向，致無法應用於垂直磁記 錄媒體。先前有人利用MgO、NaCl基板或MgO、Cr及CrRu底 層蠢晶(epitaxial)來促進FePt合金薄膜之垂直磁異向性，亦有人利 201250676 用(FePt/B2〇3)與(FePt)n多層膜來獲得垂直磁異向性之Fept合金薄 膜，然多層膜將會增加製造成本且磁性層與底層(或緩衝層)之間在 退火過程易產生交互擴散，進而影響磁性層之磁性質。因此需要 -種膜層結構簡化且具有垂直磁異向性之合金賴，以作為超高 密度之垂直磁記錄媒體材料。 爰是之故，申請人有鑑於習知技術之缺失，發明出本案「非 磊晶機制成長具垂直磁異向性之硬磁性合金薄膜」，用以改善上述 習用手段之缺失。 【發明内容】 因此，本發明之-目的係提供一種非蟲晶機制成長具垂直磁 異向性之硬雜合金_，其包含：—基板及-硬雜層。該硬 磁性層係沉積於該基板上，其厚度係介於25〜35nm之間，其中該 基板之溫度係大於600。(：，藉哺縣具有垂直磁異向性之硬磁性 合金薄膜。 本發明之另-目的係提供一種非蠢晶機制成長具垂直磁異向 性之硬磁性合金薄膜之製造方法’其步含：提供—基板；加 熱該基板至6W：以上；於該基板上沉積一硬磁性層，其厚度介於 25〜35 nm之間；及利用該基板對該硬磁性層進行一臨場退火處 理，藉以獲得該具有垂直磁異向性之硬磁性合金薄膜。 關於本發明之優點與精神，可以藉由以下的實财式及所附 圖式得到進一步的瞭解。 201250676 【實施方式】 本發明係提供一種非磊晶機制成長具垂直磁異向性之硬磁性 合金薄膜，其包含一基板以及一硬磁性層，其中該基板係結晶面 指向為(100)之自然氧化石夕(natural-oxidized silicon)基板，其溫度係 大於600°C。而該硬磁性層係利用直流磁控濺鍍(direct current magnetron sputtering)沉積於該基板上。該硬磁性層係為一鐵基合 金(Fe-basedalloy)，較佳為一鐵始(Fept)合金，其始含量介於41〜51 at.0/。之間、厚度介於25〜35 nm之間。經由該基板之臨場退火(in_situ annealing)處理後之具垂直磁異向性之硬磁性合金薄膜之垂直膜面 頑磁力(out-of-plane coercivity，Hc_〇大於 14000 〇e、飽和磁化量 (saturation magnetization，Ms)大於450 emu/cm3、垂直膜面角形比 (out-of-plane squareness，S_〇 大於 0.9、有序化程度（〇rdering parameter，S〇rder)大於0.69，具備應用於高密度金直磁記錄媒體的 潛力。 請參閱第1圖，其係本發明一較佳實施例之非磊晶機制成長 具垂直磁異向性之硬磁性合金薄膜之膜層結構。根據第i圖，本 發明之具垂直磁異向性之硬磁性合金薄膜丨包含一基板n以及一 硬磁性層12。該基板11為(100)之自然氧化矽基板，而該硬磁性 層12係利用直流磁控濺鍍沉積於該基板n上’其中該硬磁性層 12之材料係選自鐵基合金，較佳為Fept，且其厚度介於乃〜％臟 之間。該FePt合金中之鉑含量係介於41〜51 at %，較佳為Fe54pt46。 根據第1圖，本發明一較佳實施例之具垂直磁異向性之硬磁 性合金薄膜1包含一(1〇〇)之自然氧化矽基板u及一 FePt硬磁性 層12，厚度30 nm之FePt硬磁性層12之濺鍍功率控制在Fe為 201250676 15 watt及Pt為4 watt，該梦基板11之溫度大於6⑻。^ ,濺鍍腔體 氬氣壓力固定在lOmTorr ’基板轉速固定在10rpm，硬磁性層12 將因矽基板11之臨場退火而產生一具有垂直磁異向性之FePt 硬磁相，藉以獲得一高垂直磁性質之磁記錄合金薄膜。 本發明之FePt合金薄膜之磁性質係利用震動樣品磁度儀 (Vibrating Sample Magnetometer ’ VSM)量測，相結構是以 X·光繞 射儀(X-ray Diffraction ’ XRD)之Cu-Κα鑑定，顯微結構是以高解 析穿透式電子顯微鏡(high-resolution transition electron mieiOseope， HR-TEM)觀察。 實施例 厚度30 nm之FeMPt46合金薄膜以直流磁控濺鍍沉積於溫度為 620°C之矽基板上。 比較例一 厚度30 nm之Fe^Pt46合金薄臈以直流磁控賤錄沉積於溫度為 520 C之秒基板上。 比較例二 厚度30 mn之Fe^Pt46合金薄膜以直流磁控機鑛沉積於溫度為 570°C之矽基板上。 比較例三 厚度30 nm之Fe^Pt36合金薄膜以直流磁控濺鍍沉積於溫度為 201250676 620°C之矽基板上。 比較例四 厚度30 nm之Fe^Pt55合金薄膜以直流磁控濺鍍沉積於溫度為 620°C之矽基板上。 比較例五 厚度20 nm之Fe^Pt46合金薄膜以直流磁控漱鍍沉積於溫度為 620°C之發基板上。 比較例六 厚度40 nm之Fe^Pl；46合金薄膜以直流磁控濺鐘沉積於溫度為 620°C之矽基板上。 請參閱第2A〜2C圖，其係分別為本發明實施例與比較例一、 二之硬磁性合金薄膜經臨場退火後之震動樣品磁度儀磁滯曲線 (hysteresis loop)。由第2A〜2C圖中可以發現，當3〇腿厚之?例合 金薄膜沉積於570。(：以下之基板溫度時，平行方向磁滯曲線皆略大 於垂直方向磁滯曲線，其呈現散亂排列。然而#基板溫度增加至 620 °C時，平行方向磁滯曲線明顯縮小，呈現垂直磁異向性之Fept 合金薄膜。根據第2A圖，當基板溫度為62〇 °c時，FePt合金薄膜 之Ms值約為473 emu/cm3。 請參閱第3圖，其係本發明實施例與比較例一、二之頑磁力 201250676 (coercivity)隨基板溫度之變化曲線。根據第3圖，當基板溫度為 520。(：時，Hci及Hcv/值分別為8 9及1〇 5 k〇e ;然而當基板溫度 增加至570 〇C時，此時可獲得最大Hc"，其值為1；3 〇 k〇e，而其 Hex值約為11.0 kOe ;繼續將基板溫度增加至62〇 QC時，可獲得 最大Hci及最小Hcz/值，其值分別為14 〇 k〇e及4 〇 k〇e。 请參閱第4圖，其係本發明實施例與比較例一、二之角形比 (squareness)隨基板溫度之變化曲線。根據第4圖，當基板溫度為 520。(：時’ S丄及S"值分別為0.61及〇 76 ;然而當基板溫度增加至 570 °C時’此時S丄及S//值幾乎相同，其約為〇 71 ;進一步將基板 溫度增加至620 °C B寺’可獲得最大s丄及最小s"值，其值分別為 0.96及0.50，此時FePt合金薄膜之易磁化軸垂直膜面且呈現高垂 直磁異向性。此乃因FePt合金薄膜沉積於較高之基板溫度時，擁 有較慢的/儿積速率及較長持溫時間，因此當基板溫度增加至620 °c時，可獲得較佳垂直磁異向性iFePt合金薄膜。 請參閱第5圖，其係本發明實施例與比較例一、二之不同基板 溫度之XRD曲線。根據第5圖，當基板溫度為52〇 〇c時，將出現 FePt(llO)及FePt(200)繞射峰；繼續將基板溫度增加至57〇冗時， FePt(llO)及FePt(200)繞射峰明顯減弱，FePt(〇〇2)繞射峰開始出 現；進一步將基板溫度增加至620 °C時，可以獲得(〇〇1)從優取向 之FePt合金薄膜，此與第2A〜2C圖之磁滯曲線量測結果相符。 另外由第5圖之XRD繞射圖可依據下式計算出不同基板溫度 之FePt合金薄膜有序化程度(ordering parameter，S〇rder): 8 201250676 其中k值與FePt合金薄膜之組成原子百分比有關，對Fe54pt46 合金薄膜而言’其k值約為0.585 ; /QG1和/。。2表示Fept(〇〇i)和 FePt(002)繞射峰強度的積分值；經由計算可得知隨著基板溫度增 加有序化程度SOTder值也隨之上升。當基板溫度為52〇 %時，其 有序化程度為G.59 ;然而當基板溫度增加至57G χ時，其 值增加至G.64 ;進-步將基板溫度增加至62() %時，其s。*值增 加至0.69。顯示隨著基板溫度增加時，無序的朊 CUblC)結構軟_賴始大量觀成斜Ll〇 FePt硬磁相 ，因此有 序化程度提升，使得頑磁力值增加。 "月參閱第6A〜6C圖，其係分別為本發明實施例與比較例三、 四之硬磁性合金__場退火後之震祕品磁度儀磁滞曲線。 由第6A〜6C®巾可赠現，#pt含量為則at %時，鼓方向磁滞 曲線與平行方向磁滯曲線大小幾乎相$，此時驗合金薄膜呈現散 亂排列；增加Pt含量至46.〇 at%時，可獲得大的垂直方向磁滞曲線 及最小平行方向爾曲線，此啦現高垂直磁異向性之_合金 薄膜；繼續將Pt含量增加至55.Gat辦，垂直方向磁滞曲線開始縮 小且逐漸轉成散亂排列。 清參閱第7圖’其係本發明實施例與比較例三、四之頑磁力 隨FePt合金薄膜組成之變化曲線。根據 _時，綱，其雜隱^當 增加至46.0 at%時，此時Hc丄及Hc"值最大，其值分別為i4細^ 201250676 及4.0 kOe，更進-步增加Pt含量至％ 〇站％時，阶丄及说* 乎相同，其值約為7.0 kOe。 4參閱第8圖’其係本發明實施例與比較例三、四之角形比 隨随合金薄膜組成之變化曲線。根據第8圖，當pt含量為则 at./〇時’其S丄及S"值幾乎相同，分別為〇 8及〇 74 ;當丹含量增 加至 at%時，可獲得最大S道及最小S"值，其值分別為0.9曰6 及〇·5目此’隨著pt含量的增加，Fept合金薄膜之易磁化轴由 散亂轉成垂直膜面且呈現高垂直縣向性；l_pt含量增加至 55.0 at./〇時’其s丄及S"值幾乎相同，分別為〇 γι及〇 65，說明此 時FePt合金薄膜呈現散亂排列。 請參閱第9圖，其係本發明實施例與比較例三、四之不同秘 合金薄膜組成之XRD曲線。根據第9圖，# pt含量為36 〇站％ 時:可清楚的看到Feft及FePt兩相共存所產生繞射峰，說明此 時薄膜中共存Feft軟磁相及FePt硬磁相’此乃導致Fept合金薄 膜頑磁力在Pt含量為36.G at%日·小_因；然而# pt含量增加 至46.0 at.%時’ &3朽(2〇〇)及Fept(2〇〇)繞射峰消失此時皆呈現 FePt繞射峰且祕_)及FePt(〇〇2)繞射峰強度開始增強，可獲得 FePt_)從優取向之FePt合金薄膜；繼續將朽含量提高至^ 〇 at.%時’此時出現FePt及Fept3共存相繞射峰，此時薄臈中f奶 硬磁相大幅齡，且有大量的驗軟磁相及秘认鐵磁相出現， 導致FePt合金薄臈硬磁特性明顯下降，這也是當朽含量提高至 55.0 at.%時’FePt合金薄膜頑磁力劇烈下降的原目此與第6A〜0c 圖之磁滯曲線量測結果相符。 請參閱第10A〜10C圖’其係分別為本發明實施例與比較例 201250676 五、六之硬雜合金薄酿臨域之震紐品磁度儀磁滞曲 線由第10A〜10C圖中可以發現，Fept合金薄膜垂直方向之磁滞 曲線大於平行方向，此__向蚊磁異向性。 月參閱第11圖’其係本f明實施例與比較例五、六之頑磁力 I^FePt合金薄膜厚度之變化曲線。根據第u圖，當·合金薄 膜厚度為20 nm時，其He丄及He"值幾乎相同，其值約為12 k〇e。 進一步將厚度增加至3〇伽時，此時可獲得最大也值及最小Η。" 值，其值分別為R0kOe及4.0k〇e。進一步增加薄膜厚度至4〇nm 時’其/c"值反而會大於Hc♦其值分別為9 8 k〇e及 10.3 kOe。 明參閱第I2圖，其係本發明實施例與比較例五、六之角形比 Ik FePt合金賴厚度之變化轉。根· 12目當F奶合金薄 膜厚度為20 nm a夺，其S丄及S"值分別為0.95及〇·73 ;進-步將厚 度增加至30 nm時’其S丄提升至0.96，而S"ii降為0.5，說明此 時FePt合金薄膜呈現垂直磁異向性；繼續將驗薄膜厚度增加至 40 nm時’其s丄值卻有下降趨勢，但s"值隨厚度增加而升高，其 值分別為0.90及0.61。 凊參閱第13圖，其係本發明實施例與比較例五、六之不同Fept 合金薄膜厚度之勘曲線。根據第丨3圖，當薄膜厚度增加至2〇nm 時’可明顯的看到尸奶轉）、秘聊幻及秘川⑴繞射峰。進一 步將薄膜厚度提升測肺，l1g Fep_ept(觀)及秘聯幻繞射 峰強度明顯上升且Fept(lll)繞射峰強度無鴨變化，此時出現優 異的FePt(OOl)從優取向。然而，更進一步增加薄膜厚度至4〇⑽時， FePt(1U)的繞射峰強度會逐漸增強，並出現微弱的FePt(200)繞射 201250676 峰’表厚度較大的FePt合金薄膜不利於維持其垂直磁異向性，此與 第10A〜10C圖之磁滯曲線量測結果相符。 請參閱第14A、14B圖’其係本發明實施例與比較例六之高解 析穿透式電子顯微鏡(HR-TEM)橫截面明視野影像圖。根據第14A 圖，將30nm厚之FePt合金薄膜沉積於620 0C之(100)自然氧化石夕基 板時’ FePt薄膜之面間距(d spacing)值為0.3732 nm，此與Ll〇 FePt 之c軸晶格常數(0.3735 nm)極為接近’證明FePt易磁化軸[001]垂直 於膜面’因而呈現垂直磁異向性。從Hr_tem橫截面明視野影像圖 中發現FePt硬磁性層僅有一顆晶粒，當晶粒尺寸(291腿)和膜厚 (30 nm)相近時’應變鬆他異向性(§train relaxation anisotropy)會沿 著薄膜方向，使得FePt薄膜(001)平行於膜面而獲得(〇〇1)從優取 向，FePt薄膜因而呈現垂直磁異向性。根據第wb圖，當薄膜厚度 增加至40 nm時’可以發現HR-TEM橫截面明視野影像圖中呈現散 亂排列的FePt合金薄膜’此時也說明當薄膜厚度超過3〇⑽時，Fept 硬磁性層之垂直磁異向性將遭受到破壞。 依據本發明之非磊晶機制成長具垂直磁異向性之硬磁性合金 薄膜及其製造方法’將30 mn厚之Fe54Pt46硬磁性合金薄膜直接沉 積於620C之(100)自然氧化矽基板上，其垂直膜面頑磁力(15(^)大 於14000 Oe、飽和磁化量(MS)大於450 emu/cm3、垂直膜面角形比 (S丄)大於0.9、有序化程度大於〇.69，且不需利用任何基板或底層 材料之蠢晶效果來促進FePt硬磁性合金薄膜之垂直磁異向性，具 備應用於超高密度垂直磁記錄媒體之潛力。 12 201250676 雖然本發明已以較佳實施例揭露如上，然其並非用以限定本 發明之範圍’任何熟習此技藝者，在不脫離本發明之精神和範圍 内’當可作各種之更動觸飾，因此本發明之賴細當視後附 之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖：本發明一較佳實施例之具垂直磁異向性之硬磁性合金薄 膜之膜層結構。 / 第2A〜2C圖：本發明實施例與比較例一、二之硬磁性合金薄膜經 臨場退火後之震動樣品磁度儀磁滯曲線。 第3圖：本發明實施例與比較例一、二之頑磁力隨基板溫度之變化 曲線。 第4圖：本發明實施例與比較例一、二之角形止隨基板溫度之變化 曲線。 第5圖：本發明實施例與比較例一、二之不同基板溫度之乂肋曲 線。 第6A〜6C圖：本發明實施例與比較例三、四之硬磁性合金薄膜經 臨場退火後之震動樣品磁度儀磁滯曲線。 第7圖：本發明實施例與比較例三、四之頑磁力隨FePt合金薄膜 組成之變化曲線。 第8圖：本發明實施例與比較例三、四之角形比隨FePt合金薄膜 組成之變化曲線。 第9圖：本發明實施例與比較例三、四之不同FePt合金薄膜組成 之XRD曲線。 13 201250676 第10A〜10C圖··本發明實施例與比較例五、六之Fept合金薄膜經 臨場退火後之震動樣品磁度儀磁滞曲線。 第11圖：本發明實施例與比較例五、六之頑磁力隨驗合金薄膜 厚度之變化曲線。 第12圖：本發明實施例與比較例五、六之角形比隨FePt合金薄膜 厚度之變化曲線。 第13圖：本發明實施例與比較例五、六之不同FePt合金薄膜厚度 之XRD曲線。 第14A、14B圖：本發明實施例與比較例六之HR-ΤΕΜ橫截面明 視野影像圖。 【主要元件符號說明】 1非遙晶_成長具垂直磁異向性之硬雜合金薄膜 11基板 12硬磁性層201250676 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a hard magnetic alloy film having a perpendicular magnetic anisotropy, and more particularly to a hard magnetic alloy film having a perpendicular magnetic anisotropy grown by a non-exfoliation mechanism. [Prior Art] Traditional hard disk drives use horizontal recording to record data, but horizontal recording media are arranged in reverse due to the magnetization direction of adjacent recording bits, and are limited by the superparamagnetic limit. When the recording density is increased to a certain extent, the written data is easily lost due to thermal instability, and the demand for ultra-high recording density cannot be achieved. The term "perpendicular recording" means that the magnetization direction of the recording medium is perpendicular to the film surface. Since it has a small demagnetizing field (Hd) and a thick recording layer, it is considered that the horizontal recording heat can be overcome. The shortcomings of stability continue to increase the recording density. In addition, since the magnetization direction of the perpendicular recording is perpendicular to the film surface, the magnetic lines of force are parallel to each other, but the directions are opposite to each other, so that the magnetic lines of force do not repel each other, and the magnetic flux density is high, so that a line recording density of 13⁄4 can be achieved. The use of perpendicular magnetic recording technology is expected to increase the recording density to more than one megabit (1 Tb/in2). However, in order to apply FePt alloy to a perpendicular magnetic recording medium, (〇〇1) crystal plane must be parallel to the film surface to obtain the perpendicular magnetic anisotropy of [〇〇1], and fct (face-centered tetragonal) structure of FePt film. The (in) energy is the lowest, so that the FePt film generally tends to be (111) favorably oriented after annealing, so that it cannot be applied to a perpendicular magnetic recording medium. Previously, MgO, NaCl substrates or MgO, Cr and CrRu underlayers were used to promote the perpendicular magnetic anisotropy of FePt alloy films. Some people used the (FePt/B2〇3) and (FePt)n multilayer films for 201250676. In order to obtain a perpendicular magnetic anisotropy Fept alloy film, the multilayer film will increase the manufacturing cost and the magnetic layer and the underlying layer (or the buffer layer) are prone to interdiffusion during the annealing process, thereby affecting the magnetic properties of the magnetic layer. Therefore, there is a need for an alloy having a simplified film structure and a perpendicular magnetic anisotropy as an ultra-high density perpendicular magnetic recording medium material. For the sake of this, the applicant invented the "non-extra-grain mechanism to grow a hard magnetic alloy film with perpendicular magnetic anisotropy" in view of the lack of conventional techniques to improve the lack of the above-mentioned conventional means. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a non-worm-like mechanism for growing a hard alloy having a perpendicular magnetic anisotropy, comprising: a substrate and a hard layer. The hard magnetic layer is deposited on the substrate to a thickness of between 25 and 35 nm, wherein the temperature of the substrate is greater than 600. (:, a hard magnetic alloy film having a perpendicular magnetic anisotropy in the borrowing county. Another object of the present invention is to provide a method for manufacturing a hard magnetic alloy film having a perpendicular magnetic anisotropy by a non-stupid mechanism. Providing a substrate; heating the substrate to 6W: or more; depositing a hard magnetic layer on the substrate, the thickness of which is between 25 and 35 nm; and performing a field annealing treatment on the hard magnetic layer by using the substrate The hard magnetic alloy film having the perpendicular magnetic anisotropy is obtained. The advantages and spirit of the present invention can be further understood by the following solid financial formula and the accompanying drawings. 201250676 [Embodiment] The present invention provides a A non-exfoliation mechanism for growing a hard magnetic alloy film having a perpendicular magnetic anisotropy, comprising a substrate and a hard magnetic layer, wherein the substrate is a natural-oxidized silicon substrate having a crystal plane oriented to (100) The temperature is greater than 600 ° C. The hard magnetic layer is deposited on the substrate by direct current magnetron sputtering. The hard magnetic layer is an iron base. Fe-based alloy, preferably a Fept alloy, having an initial content of between 41 and 51 at.0 / and a thickness of between 25 and 35 nm. (in_situ annealing) The vertical film coercivity of the hard magnetic alloy film with perpendicular magnetic anisotropy (Hc_〇 is greater than 14000 〇e, and the saturation magnetization (Ms) is greater than 450 emu/cm3, vertical film surface angle ratio (out_of-plane squareness, S_〇 is greater than 0.9, degree of 〇rdering parameter (S〇rder) is greater than 0.69, suitable for high-density gold magnetic recording media Please refer to FIG. 1 , which is a non-extrusion mechanism of a preferred embodiment of the present invention for growing a film structure of a hard magnetic alloy film having a perpendicular magnetic anisotropy. According to FIG. The magnetic anisotropic hard magnetic alloy film 丨 comprises a substrate n and a hard magnetic layer 12. The substrate 11 is a (100) natural ruthenium oxide substrate, and the hard magnetic layer 12 is deposited by DC magnetron sputtering. On the substrate n, wherein the material of the hard magnetic layer 12 is selected from an iron base Gold, preferably Fept, and having a thickness of between -% and % soil. The platinum content of the FePt alloy is between 41 and 51 at %, preferably Fe54pt 46. According to Fig. 1, the invention is preferred. The hard magnetic alloy film 1 having a perpendicular magnetic anisotropy of the embodiment comprises a (1 〇〇) natural yttrium oxide substrate u and a FePt hard magnetic layer 12, and a sputter power control of the FePt hard magnetic layer 12 having a thickness of 30 nm When Fe is 201250676 15 watt and Pt is 4 watt, the temperature of the dream substrate 11 is greater than 6 (8). ^, the argon pressure of the sputtering chamber is fixed at 10mTorr 'the substrate rotation speed is fixed at 10 rpm, and the hard magnetic layer 12 will generate a FePt hard magnetic phase with perpendicular magnetic anisotropy due to the field annealing of the ruthenium substrate 11 to obtain a high A perpendicular magnetic magnetic recording alloy film. The magnetic properties of the FePt alloy thin film of the present invention are measured by a Vibrating Sample Magnetometer (VSM), and the phase structure is identified by Cu-Κα of an X-ray Diffraction 'XRD. The microstructure was observed by a high-resolution transition electron miei Oseope (HR-TEM). EXAMPLES A FeMPt46 alloy film having a thickness of 30 nm was deposited by DC magnetron sputtering on a substrate having a temperature of 620 °C. Comparative Example 1 Fe^Pt46 alloy thin crucible with a thickness of 30 nm was deposited on a substrate with a temperature of 520 C on a DC magnetron. Comparative Example 2 A Fe Mn Pt46 alloy film having a thickness of 30 mn was deposited on a kiln substrate at a temperature of 570 ° C by a DC magnetron. Comparative Example 3 Fe^Pt36 alloy film with a thickness of 30 nm was deposited by DC magnetron sputtering on a substrate with a temperature of 201250676 and 620 °C. Comparative Example 4 A FeMn Pt55 alloy film having a thickness of 30 nm was deposited by DC magnetron sputtering on a substrate having a temperature of 620 °C. Comparative Example 5 Fe^Pt46 alloy film with a thickness of 20 nm was deposited by DC magnetron plating on a substrate with a temperature of 620 °C. Comparative Example 6 Fe^Pl; 46 alloy film with a thickness of 40 nm was deposited on a 620 °C substrate with a DC magnetron splash. Please refer to FIGS. 2A to 2C, which are respectively hysteresis loops of the vibrating sample viscometer after the field annealing of the hard magnetic alloy film of the embodiment and the comparative examples 1 and 2 of the present invention. It can be found from Fig. 2A to Fig. 2C that an alloy film of 3 legs thick is deposited at 570. (In the following substrate temperature, the hysteresis curves in the parallel direction are slightly larger than the hysteresis curves in the vertical direction, which appear scattered. However, when the substrate temperature increases to 620 °C, the hysteresis curve in the parallel direction is significantly reduced, showing perpendicular magnetic Anisotropic Fept alloy film. According to Fig. 2A, when the substrate temperature is 62 ° C, the Ms value of the FePt alloy film is about 473 emu/cm 3 . Please refer to Fig. 3, which is an example and comparison of the present invention. Example 1 and 2 coercivity 201250676 (coercivity) as a function of substrate temperature. According to Figure 3, when the substrate temperature is 520. (:, Hci and Hcv/ values are 8 9 and 1〇5 k〇e, respectively; However, when the substrate temperature is increased to 570 〇C, the maximum Hc" is obtained at this time, which is 1; 3 〇k〇e, and its Hex value is about 11.0 kOe; when the substrate temperature is continued to increase to 62 〇 QC, The maximum Hci and the minimum Hcz/value are obtained, and the values are 14 〇k〇e and 4 〇k〇e, respectively. Please refer to Fig. 4, which is a squareness ratio of the embodiment of the present invention and the comparative examples 1 and 2. Curve with substrate temperature. According to Figure 4, when the substrate temperature is 520. (: The values of S丄 and S" are 0.61 and 〇76, respectively; however, when the substrate temperature is increased to 570 °C, the values of S丄 and S// are almost the same, which is about 〇71; further increase the substrate temperature to 620 °. CB Temple's maximum s丄 and minimum s" values are 0.96 and 0.50, respectively. At this time, the easy magnetization axis of the FePt alloy film is perpendicular to the film surface and exhibits high perpendicular magnetic anisotropy. This is due to FePt alloy film deposition. At higher substrate temperatures, it has a slower rate and a longer temperature holding time, so when the substrate temperature is increased to 620 °c, a better perpendicular magnetic anisotropy iFePt alloy film can be obtained. Fig. 5 is an XRD curve of different substrate temperatures of the embodiment of the present invention and Comparative Examples 1 and 2. According to Fig. 5, when the substrate temperature is 52 〇〇c, FePt (110) and FePt (200) diffraction will occur. Peak; when the substrate temperature is increased to 57 〇, the diffraction peaks of FePt(llO) and FePt(200) are obviously weakened, and the diffraction peak of FePt(〇〇2) begins to appear; further increase the substrate temperature to 620 °C. , (〇〇1) favorably oriented FePt alloy film can be obtained, which is compared with the 2A~2C figure. The hysteresis curve measurement results are consistent. In addition, the XRD diffraction pattern of Fig. 5 can calculate the ordering parameter of the FePt alloy film with different substrate temperatures according to the following formula: 8 201250676 where k value and FePt The composition of the alloy film is related to the atomic percentage. For the Fe54pt46 alloy film, its k value is about 0.585; /QG1 and /. . 2 represents the integral value of the diffraction peak intensities of Fept (〇〇i) and FePt (002); it is found by calculation that the SOTder value also increases as the substrate temperature increases. When the substrate temperature is 52%, the ordering degree is G.59; however, when the substrate temperature is increased to 57G ,, the value is increased to G.64; when the substrate temperature is increased to 62 ()% , its s. * The value is increased to 0.69. It shows that as the substrate temperature increases, the disordered 朊 bl bl bl bl CU CU CU CU CU CU CU CU CU CU CU CU CU CU CU P P P P P P P P P P P P P P P P P P P P P P P "Monitor refers to Figures 6A to 6C, which are respectively the hysteresis curve of the shock magnetometer after annealing the __ field of the hard magnetic alloy of the embodiment and the comparative example 3 and 4. It can be given by the 6A~6C® towel. When the #pt content is at %, the hysteresis curve of the drum direction and the hysteresis curve of the parallel direction are almost the same, and the alloy film is arranged in a random arrangement; the Pt content is increased to 46. 〇at%, a large vertical hysteresis curve and a minimum parallel direction curve can be obtained, which is a high perpendicular magnetic anisotropy alloy film; continue to increase the Pt content to 55. Gat, vertical direction The hysteresis curve begins to shrink and gradually turns into a scattered arrangement. Refer to Fig. 7 for the variation of the coercivity of the embodiment of the present invention and the comparative examples 3 and 4 with the composition of the FePt alloy film. According to _,,,,,, when the increase is to 46.0 at%, the value of Hc丄 and Hc" is the largest, and the values are i4 fine ^ 201250676 and 4.0 kOe respectively, and the Pt content is further increased to % 〇 When station %, the order is the same as the value, which is about 7.0 kOe. 4, Fig. 8 is a graph showing the relationship between the angular ratio of the embodiment of the present invention and the comparative examples 3 and 4 with the composition of the alloy film. According to Figure 8, when the pt content is at./〇, its S丄 and S" values are almost the same, respectively 〇8 and 〇74; when the dan content is increased to at%, the maximum S channel and minimum can be obtained. The value of S" is 0.9曰6 and 〇·5 mesh respectively. With the increase of pt content, the easy magnetization axis of Fept alloy film is transferred from scattered to vertical film surface and exhibits high vertical county orientation; l_pt content When the value is increased to 55.0 at./〇, the values of s丄 and S" are almost the same, respectively 〇γι and 〇65, indicating that the FePt alloy film is randomly arranged. Please refer to Fig. 9, which is an XRD curve of the composition of the different alloy films of the examples of the present invention and Comparative Examples 3 and 4. According to Fig. 9, when the #pt content is 36%, the diffraction peaks of the Feft and FePt phases can be clearly seen, indicating that the Feft soft magnetic phase and the FePt hard magnetic phase coexist in the film at this time. The Fnt alloy film has a coercive force at a Pt content of 36.G at% ··小_因; however, the # pt content increases to 46.0 at.% '&3 decay (2〇〇) and Fept(2〇〇) diffraction When the peak disappears, the FePt diffraction peak appears and the __ and FePt(〇〇2) diffraction peak intensity begins to increase, and the FePt_) favorably oriented FePt alloy film can be obtained; continue to increase the turmeric content to ^ 〇at.% At this time, there are FePt and Fept3 coexisting phase diffraction peaks. At this time, the hard magnetic phase of f milk in the thin sputum is large, and there are a large number of soft magnetic phases and a secret ferromagnetic phase, which leads to the hard magnetic properties of FePt alloy. Significantly decreased, which is also the case where the coercive force of the FePt alloy film is drastically reduced when the aging content is increased to 55.0 at.%. This is consistent with the hysteresis curve measurement results of the 6A~0c chart. Please refer to the figures 10A to 10C, which are respectively the embodiment of the present invention and the comparative example 201250676. The hysteresis curve of the magnetic alloy of the hard alloy of the fifth and the sixth is calculated from the 10A to 10C. The hysteresis curve of the vertical direction of the Fept alloy film is larger than the parallel direction, and this __ to the mosquito magnetic anisotropy. Refer to Fig. 11 for the variation of the thickness of the coercive I^FePt alloy film of the embodiment of the present invention and the comparative examples 5 and 6. According to Fig. u, when the thickness of the alloy film is 20 nm, the He丄 and He" values are almost the same, and the value is about 12 k〇e. When the thickness is further increased to 3 〇, the maximum value and the minimum 可获得 are obtained at this time. The " value, which is R0kOe and 4.0k〇e, respectively. Further increasing the film thickness to 4 〇 nm will have a value of /c" which is greater than Hc♦, which is 9 8 k〇e and 10.3 kOe, respectively. Referring to Figure I2, it is a change in the thickness of the Ik FePt alloy of the embodiment of the present invention and the comparative examples 5 and 6. When the thickness of the F-milk alloy film is 20 nm, the S丄 and S" values are 0.95 and 〇·73, respectively; when the thickness is increased to 30 nm, the S丄 is increased to 0.96. S"ii is reduced to 0.5, indicating that the FePt alloy film exhibits perpendicular magnetic anisotropy; when the film thickness is increased to 40 nm, its s丄 value decreases, but the s" value increases with thickness. The values are 0.90 and 0.61, respectively. Referring to Figure 13, it is a survey of the thickness of the Fept alloy film which is different from the examples 5 and 6 of the present invention. According to Figure 3, when the thickness of the film is increased to 2 〇 nm, it can be clearly seen that the corpse milk turns, the secret saga and the secret stream (1). Further, the thickness of the film was increased to measure the lungs, and the intensity of the l1g Fep_ept (viewing) and the secret phantom diffraction peaks increased significantly and the intensity of the Fept (lll) diffraction peak did not change. At this time, the superior FePt (OOl) favorably oriented. However, when the film thickness is further increased to 4 〇(10), the diffraction peak intensity of FePt(1U) will gradually increase, and a weak FePt(200) diffraction will occur. 201250676 The peak thickness of the FePt alloy film is not conducive to maintenance. Its perpendicular magnetic anisotropy is consistent with the measurement results of the hysteresis curve in Figures 10A to 10C. Referring to Figures 14A and 14B, a high-resolution electron microscope (HR-TEM) cross-sectional bright-field image of the embodiment of the present invention and Comparative Example 6 is shown. According to Fig. 14A, when a 30 nm thick FePt alloy film is deposited on a 620 0C (100) natural oxide oxide substrate, the interplanar spacing (d spacing) of the FePt film is 0.3732 nm, which is a c-axis crystal with L1〇FePt. The lattice constant (0.3735 nm) is very close to 'proving that the FePt easy magnetization axis [001] is perpendicular to the film surface' and thus exhibits perpendicular magnetic anisotropy. From the bright-field image of Hr_tem cross-section, it is found that the FePt hard magnetic layer has only one grain. When the grain size (291 legs) and film thickness (30 nm) are similar, the strain relaxation anisotropy (§train relaxation anisotropy) In the direction of the film, the FePt film (001) is parallel to the film surface to obtain (〇〇1) favorable orientation, and the FePt film thus exhibits perpendicular magnetic anisotropy. According to the wb diagram, when the film thickness is increased to 40 nm, it can be found that the FR-TEM cross-section of the bright-field image shows a scattered arrangement of FePt alloy film. This also indicates that when the film thickness exceeds 3 〇 (10), Fept is hard. The perpendicular magnetic anisotropy of the magnetic layer will suffer damage. A hard magnetic alloy film having a perpendicular magnetic anisotropy and a method for producing the same according to the non-exfoliation mechanism of the present invention. A 30 mn thick Fe54Pt46 hard magnetic alloy film is directly deposited on a 620C (100) natural ruthenium oxide substrate. Vertical film surface coercive force (15(^) is greater than 14000 Oe, saturation magnetization (MS) is greater than 450 emu/cm3, vertical membrane surface angle ratio (S丄) is greater than 0.9, and degree of ordering is greater than 〇.69, and is not required The use of the stupid crystal effect of any substrate or underlayer material to promote the perpendicular magnetic anisotropy of the FePt hard magnetic alloy film has the potential to be applied to ultra high density perpendicular magnetic recording media. 12 201250676 Although the present invention has been disclosed in the preferred embodiment as above However, it is not intended to limit the scope of the invention. Any person skilled in the art can make various types of touches without departing from the spirit and scope of the invention, and therefore the application of the present invention is attached. The scope of the patent is defined as follows. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a film structure of a hard magnetic alloy film having a perpendicular magnetic anisotropy according to a preferred embodiment of the present invention. / 2A to 2C: Invention implementation The hysteresis curve of the vibrating sample viscometer of the hard magnetic alloy film of Comparative Examples 1 and 2 after field annealing. Fig. 3 is a graph showing the relationship between the coercive force and the substrate temperature of the embodiment and the comparative examples 1 and 2. 4 is a graph showing the variation of the angular temperature of the substrate of the present invention and the comparative examples 1 and 2 with the temperature of the substrate. Fig. 5: the rib profile of the substrate temperature of the embodiment of the present invention and the comparative examples 1 and 2. 6A to 6C Figure: Hysteresis curve of the vibrating sample viscometer of the hard magnetic alloy film of the embodiment and the comparative examples 3 and 4 after the field annealing. Fig. 7: The coercivity of the embodiment of the present invention and the comparative examples 3 and 4 with FePt The curve of the composition of the alloy film. Fig. 8 is a graph showing the relationship between the angular ratio of the examples of the present invention and the comparative examples 3 and 4 with the composition of the FePt alloy film. Fig. 9: Different FePt of the examples of the present invention and the comparative examples 3 and 4. The XRD curve of the composition of the alloy film. 13 201250676 10A~10CFig. The hysteresis curve of the vibrating sample viscometer of the Fept alloy film of the embodiment and the comparative example 5 and 6 after the field annealing. Figure 11: The present invention The curves of the thickness of the coercive alloy film of the examples and the comparative examples 5 and 6 are shown in Fig. 12. Fig. 12 is a graph showing the relationship between the angular ratio of the examples of the present invention and the comparative examples 5 and 6 with the thickness of the FePt alloy film. : XRD curves of thicknesses of different FePt alloy films in the examples of the present invention and Comparative Examples 5 and 6. Figures 14A and 14B are views of the HR-ΤΕΜ cross-section bright-field image of the embodiment of the present invention and Comparative Example 6. [Main component symbols Description] 1 non-remote crystal _ growth of hard magnetic alloy film with perpendicular magnetic anisotropy 11 substrate 12 hard magnetic layer