201249590 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種研磨工具以及相關方法。因此，本 發明與化學和材料科學領域有關。 【先前技術】 許多工業在使用不同種類的機械研磨製程來研磨工作 件。例如，電腦製造工業大量依賴化學機械研磨（CMp ) 製程來研磨陶瓷、矽、玻璃、石英及金屬的晶圓。此等研 磨製程一般需要將晶圓抵靠在由諸如聚胺基甲酸酯 (polyurethane)之耐久性有機物質製成的旋轉研磨墊上。 使用一化學研磨漿，其含有能夠破碎晶圓物質之化學品， 以及定量之研磨顆粒，其可物理性地侵蝕晶圓表面。將 研磨漿持續地加至旋轉之CMP研磨墊上，且施加在晶圓 上之雙重化學力及機械力致使能以所要方式研磨晶圓。 研磨顆粒在整個研磨墊上的分布為達成研磨品質之重 要因素。研磨墊之頂部藉由纖維或小孔固持該等顆粒，該 等纖維或小孔提供摩擦力，其足以防止該等顆粒因著研磨 墊之旋轉運動所產生的離心力而被甩出該研磨墊。因此， 盡可能保持研磨塾之頂部的彈性’盡可能保持纖維直立， 且確保具有足夠的開孔以容納新施用的研磨顆粒是相當重 要的。 田 然而，在維持研磨塾表面方面會發生的一問題是來自 工件、研磨桀及研磨墊修整器之研磨碎片的累積。此累積 會導致研磨墊頂部「變滑（glazing)」或變硬，而使纖 .201249590 維纏在一起’因此使研磨墊表面較不能固持研磨漿之研磨 顆粒。此等效應顯著降低研磨墊之總體研磨效能。此外， 在許多研磨墊的使用情況下，用來固持研磨漿的孔會被堵 塞’且研磨墊之研磨表面整體的粗糙度下降且變得雜亂。 CMP研磨墊修整器可用於藉由「梳理（c〇mbing)」或「切 割（cutting)」研磨墊表面來恢復研磨墊表面。此製程已知 為「修整（dressing)」或「調整（conditioning)」該〇ΜΡ 研磨墊。許多類型之裝置及製程已經用於此目的。—個這 樣的裝置為結合具有複數個超硬結晶顆粒（諸如鑽石顆 粒）至金屬基材表面的圓盤。 然而，當半導體科技逐漸朝向體積縮小至奈米級，已 證明目前的CMP研磨技術已不敷使用。由於這樣尺寸的 縮小，用於構成電路元件的材料無論是從尺寸和材料來說 都越來越精細。因此要求該CMP產業提供研磨材料以及 技術來回應此趨勢，以符合這樣的進步。例如，使用較低 的CMP研磨壓力、在装液中較小尺寸的研磨顆粒、以及 不會過度研磨或損害晶圓的研磨塾尺寸和特性。再者，要 使用旎將研磨墊切割成符合較小研磨顆粒的粗糙度，且不 能過度修整該研磨墊的研磨塾修整器β 有許多關於修飾目前為符合這種精細研磨之CMp法 的問題關於CMP研磨墊修整器，超研磨顆粒一定要明 顯小於那些-般用於目前已知的修整操作之顆粒。一般而 言，超研磨顆粒#常小，α致於傳統金屬基^常不適合 用於保留及固定超研磨顆粒；再者，超研磨顆粒的較小尺 .201249590 寸需要顆粒尖端的高度精確地對準，以一致地修整該修整 墊。傳統CMP研磨墊修整器可具有大於5〇 μ|γι變化的顆 粒尖端高《，而不會危及到修整的效能。然而，如果一修 整器需要修整CMP研磨墊且達到研磨非常小且精細之電 路元件時，這種變化會讓該修整器無法使用。在這種情形 中，被修整之研磨墊的突出物具有與修整器一樣等級的高 度變化。最高的突出物施加最大的壓力，且會因此刮^ 損害晶圓。 除了相對於精細之研磨操作的劇烈高度變化外，晶圓 7損傷也會因為研磨顆粒本身所產生。該等顆粒的尺$就 是問題，特別是為了更精細的研磨操作而需要的較小尺寸 顆粒。而因此傾向於造成晶圓之表面損害的較大研磨顆粒 很難從研磨漿中排除。 某些研磨&已發現加入電？元件是有Μ，其產生與 機械研磨結合的電化學研磨。這種方法已知的有電化學機 械研磨（ECMP)。在這種類型的系統中，係藉由與機械:磨 結合之電化學分解法以從表面移除導電物質。由於該電子 元件的加入，&方法需要較弱的機械或強迫剝蝕：因此 ECMP能用於研磨當只有機械和/或化學方法時非常容易變 形_卿_、斷裂__9)、破裂（。咖_的表面。 除此之外，ECMP ^允許报細微的研磨—特別是用於這種 表面（如銅電路）。 因此’目前正在尋找適合用於精細研磨應用(如那些由 於半導體體積逐漸在減少而衍生的應用）的研磨工且。 201249590 【發明内容】 因此，本發明提供導電性研磨工具以及方法，其係（並 未限制在）適用於如上所述的精細研磨應用。在一態樣中， 提供一種研磨工作件的工具，這種工具可包括一固體基 材’該固體基材可具有摻有足以讓基材產生偏壓之導電材 料的聚合物基質；該固體基材也可包括一具有表面突出物 的工作表面，該突出物（asperjties)具有小於或等於約1Q 的尖端對尖端（tip-to-tip) RA值；該工作表面具有小於或 等於約50 的表面粗縫度（surface roughness) RA值。 在另態樣中’導電材料為碳的同素異構物。在又一態樣 中’該基材具有從約2〇%至約9〇%的導電材料，該導電材 料可為均勻分布於基材中，或可集中於某幾個區域。 本發明亦呈現製造能產生偏壓之電加工研磨工具的方 法。這種方法可包括配準一固體基材之工作表面至表面粗 糙度之RA值小於或等於約5〇 。該固體基材可包含摻 有足以讓基材產生偏壓之導電材料的聚合物基質。該方法 可再包括在工作表面上形成突出#，該突出物可具有小於 或等於約10 _的尖端對尖端（tip_to_tip) RA值；該導電 材料為碳的同素異構物，如石墨或碳奈米管。在一態樣中， 該固體基材的卫作表面可為預先配準的。 在本發明之另一態樣中係提供一種研磨工作件的方 法。逆種方法可包括提供包括一固體基材之一研磨工具， °玄固體基材具有掺有^以讓基材產生偏壓之導電材料的聚 合物基質；該固體基材在一工作表面上具有突出物，其中 201249590 該突出物可具有小於或等於約彳〇 tiP) RA值；該工作表 、尖端對尖端（tip-to- 炸衣面也可具有小於或 表面粗糙度RA值。該方法也 … _的 電泝，曰…仏女 J匕括、，口合该工作表面至一 電源且仗工作表面至工作件之 徑。該方法尚可包含使突出物的尖端接觸途 表面’且以一實質上平行於工作件之界=工作件的界面 該突出物的尖肖’以研磨該界 J :::移動 電化學移除工作件的部份界面表面：:二額= 中，係可同時執行超過-個的步驟，例如機械和電子研； 在另一態樣令’在固體基材中可加入液態溶液。又一能樣 二藉：該液態溶液能建立一導電途徑。在—態樣中該 電源了為連續性或不連續性。 因此’現在本發明僅描述初—個初步、廣大的概念以 及較重要的特色’目此在接下來的詳細說明中可更進一步 地理解’並且在本領域所做的貢獻可能會有更佳的領合， 而本發明的其他特徵將會從接下來的詳細說明及其㈣和 申請專利範圍中變得更為清晰’也可能在實施本發明時得 知。 【實施方式] 定義 以下是在本發明的說明及專利範圍中所出現之專有名 詞的定義。 單數型態字眼如「一」和「該」，除非在上下文中清 楚明白的指示為單數然這些單數型態的指稱亦包括複 201249590 數對象。因此，舉例來說，如「—顆粒」包括一或多個這 種顆粒’如「該金屬」係包括—或多個這種金屬。 所述的「突出*(asperity)」係指有目的地形成在基材 表面的大出物’該突出物具有在頂端（apex)良好排列的尖 端（tip) 〇 所述的「表面粗糙度（surface r〇ughness) RA」係指 一種表面之粗糙度的測量方法，其藉由在表面最高峰以及 該表面最低谷之間的高度差來決定。表面粗糙度RA的描 述係顯示於第三圖的標號（34)。 所述的「尖端對尖端（tip_t0_tip) RA值」係指最高突 出物的尖端以及最低突出物的尖端之間高度差的測量方 法。尖端對尖端RA值的係顯示於第四圖的標號（44)。 所述的「金屬的（meta丨丨丨C)J係指金屬、或兩種或更多 金屬的合金。金屬材料的各種態樣皆可為於所屬技術領域 中具有通常知識者所熟知，例如鋁、銅、鉻、鐵、鋼、不 鏽鋼、鈦、鎢、鋅、錘、鉬等’包括其合金和化合物。 術領域中具有通常知識者所熟知的軟金屬合金。常見（但非 巴氏合金（Babbitt an〇y)」係指一群於所屬技 所述的 限制性）的態樣包括鉛基（lead 基、碎基以及其各種組合。 所述的「破的同素異構物 物理型態（例如結晶結構）的物 包括石墨、無晶型碳、鑽石、 管、膠结（aggregated)鑽石 based)、鉛銀基、錫基、鎘 」係指由碳組成但具有不同 質。碳的同素異構物之範例 虽勒稀（fullerenes)、碳奈米 奈米棒、玻璃碳（glassy 10 201249590 六方金剛石 carbon)、碳奈米泡泳（carbon nanofoam)、 (lonsdaleite)和趙氏石（chaoite)。 所述的「陶瓷的」係指一硬的、通常為晶體且實質上 具有抗熱性與抗腐蝕性的材料，其係由非金屬材料（有時隨 同金屬材料）燒製而成。許多氧化物、氮化物與碳化物材料 被視為陶瓷已是所屬領域具有通常知識者所了解的，包括 但不限制在氧化㉟、氧切、氮㈣、氮切以及碳化石夕、 碳化鎢等。 所述的「奈米研磨料（nano-abrasive)」以及r奈米顆 粒（_〇-Particle)」可交換使用，其係指研磨顆粒:有奈 米級的尺寸。尺寸範圍可依照特別的用途而不同。然而， ，一態樣中’奈米研磨料的尺寸範圍可從約1000 _至 約1 在另一態樣中，奈米研磨料的尺寸範圍可從約⑽ Γτ至：10 nm;在又另—態樣中，奈米研磨料的尺寸範 :=約5〇_至約2〇_。這種Μ顆粒可具有不同形 橢圓形、方形、自形(euhedra|)等 可為早晶或多晶。 作表面（working surface) 面其上形成有作為研磨應用的突出物。 所述的「實質上地（substa loo%的情況。恭 y〗」你如接近和包括 但有祀丨沾 係用於指雖然所想要的是100。/。， 有後小的誤差是可抵典沾 出物包括所有突出物二。列如’質上所有的表面突 部分之突出物的群組以及所有突出物減去相對少 .201249590 所述的「大約（about)」是藉由提供可能比端點「高— 些（a little above)J或「低一些（a丨丨·⑴e be|〇w)」之數值而 提供數值範圍端點的彈性。 這裡所述的複數個物品、結構元件、組成元素和/或材 料，基於方便可出現在一般的常見列舉中，然而這些列舉 可解釋為列舉中的單一構件單獨或個別地被定義，因此， 這樣列舉中的單一構件不能視為任何單獨基於在—般族群 中無相反表不之解釋的相同列舉中實際上相等的其他構 件。 濃度、數量以及其他數值上的資料可是以範圍的形式 來加以呈現或表示，而需要瞭解的是這種範圍形式的使用 僅基於方便性以及簡潔，因此在解釋時，應具有相當的彈 性，不僅包括在範圍中明確顯示出來以作為限制之數值， 同時亦可包含所有個別的數值以及在數值範圍中的次範 圍，如同每一個數值以及次範圍被明確地引述出來_般。 例如一個數值範圍「約彳微米到約5微米」應該解釋成不 僅僅包括明確引述出來的大約！微米到大約5微米，同時 還包括在此指定範圍内的每一個數值以及次範圍，因此， 包含在此一數值範圍中的每一個數值，例如2、3及4，或 例如1 -3、2-4以及3-5等的次範圍等。 此相同原則適用在僅有引述一數值的範圍中，再者， 這樣的闡明應s亥應用在無淪是一範圍的幅度或所述的特徵 中。 12 201249590 本發明 本發明是關於一種新顆的研磨工具以及研磨基材的方 法。本發明人發現，當研磨時在工件上造成刮痕的原因， 大多是由於所建構的研磨工具之粗糙所造成的，而材料的 硬度則是次之…匕，即使該工具是利用相當堅硬的材質 所製成的，具有已被非常精確對齊之突出物尖端的研磨工 具能被有效地研磨工件表面至奈米尺寸的範圍。 β舉例來說，在CMP研磨的情況中，曰曰曰#㈣痕往往 是因為CMP研磨塾上不均勻的突出物所造成的。請再參 看第-圖’舉例純，一研磨工具(1〇)顯示其具有高度不 均的突出物（12)，且卫作件（14)顯示為藉由研磨工具（1〇)而 研磨。較平均突出物高度更為突起的突出物傾向於到钱(顯 不在咖工作件(14);反之’較平均突出物高度更不突 起那些突出物（12)不會接觸（顯示在18)工作件（1句，且因 :幾乎沒有或無任何效果’或者甚至可能在工作件⑽上 a生凸起點(high spot)。這些影響可能發生於當研磨工且 =軟的材㈣成，也以硬㈣料製成；在 =，該到痕可能是因為在較高突起之突出物所造成的之 θ加的壓力所造成的。 因此，不管研磨工具的硬度為 出物的^ 杓用精確地對齊突 跨過哕工“ "艮並增加研磨率。這是因為 配置之… 不同W區域所導致的粗糙度 材料之相斟敌 个疋因為成形研磨工具的 對堅硬程度所造成。如第二圖所示，具有實質上 13 201249590 一致尚度（22)之突出物的一研磨工具（2〇)接觸到工作件（24) 時，會均句地跨過一工作表面（26)。這樣的研磨工且（2〇) 能均勾地研磨工作件（24)，而不會形成明顯的到痕以'及凸 起點。使用這樣的研磨工具將提升研磨速率，因為實質上 所有的粗糙度將針對被研磨工具進行研磨，沒有任何單一 或群組的突出物比其他單—或區域的突出物暴露在較高的 工作量。由於研磨速率與壓力成正比，因此各種材料（由堅 硬的材料到柔軟的材料）均可用來建構該研磨工具。 在某二清況下，甚至進一步藉由增加電學觀點於研磨 程序上藉此改進製帛。所謂的電化學機械研磨(EcMp)能夠 幫助消除從工作件產生的某些金屬材料凸起點。接著氧化 產物能藉纟機财法從界H樣中，電 偏壓會被引導到金屬研磨卫具上，導致與金屬墊接觸的材 料產生氧化。由於此種接觸型的特定氧化方式，只有工作 牛上之金屬材料凸起點才會被氧化。此製程對於研磨銅佈 線（copper trace)或其他導電結構特別有用。 在a加例中’研磨一工件的工具可包含一個固體基 材，其包括-摻有導電性材料的高分子基質，而使該基材 ㈣電偏壓。當該固體基材具有尖端對尖端之ra值小於 ’ Λ ; 0"m之犬出物的工作表面時，該固體基材具有增 、的！生質而且备s亥固體基材具有尖端對尖# ra值小於 或等於50_之表面粗糖度RA值的工作表面時這個該 固體基材更顯露其進步的性質。 該導電材料可為碳 元素的同素異構物 碳同素異構物 201249590 顯示各種材料導電性，且可與其他ECMP材料產生不同的 作用。因此，碳的同素異構物的選擇取決於多種因素，包 含成本以及於所屬技術領域中具有通常知識者的領域中所 能選擇的材料，對於本發明有用之碳同素異構物的非限制 性範例，包括石墨、無晶型碳、鑽石、富勒稀（fune「enes)、 碳奈米管、膠結（aggregated)鑽石‘米棒、玻璃碳⑻assy carbon)、碳奈米泡沫（carb0ll nan0f0am)、六方金剛石 (lonsdaleite)、趙氏石（chaoite)以及其組合物。此外，其 他型態的碳元素也對於本發明有所幫助，非限制性的範例 包括石墨粉末、石墨薄片 '石墨纖維、任何形態的純化碳、 碳纖維、碳粉末、碳黑。再者，導電材料也可以包括碳的 同素異構物以及金屬粒子（如金、錫、銅、銀、麵、紐錫合 ::白金、鉛、金屬合金、塗佈導電性材料的纖維、導電 向分:等。在一實施例中’該碳的同素異構物為石墨。在 另實施例中，該碳同素異構物為碳奈米管。 該導電性材料可為任何足以讓該基材產生電偏壓的固 體基材。在—實施例中，料電性材料包括約20%至約90% 的固體基材。在另一實施 至約帆的固體基材。 電性材料包括從約4〇% 可僅料的配置具有各種的構型。該導電性材料 同的軸線戈者疋的位置’尤其是集中在某些點上，沿著不 、車線或者於整個固體基材上 性材料的位置以及、，宜 地間卜布。該導電 可。牯 /亦、而要此夠足夠產生電偏壓即 、可依據用來製造固體基材的材料、欲被研 15 201249590 磨的材料、使用的計劃夂 屬技術領域t具有通常㈣陶me⑹）等於所 該導電性材料可用任何因素而有所不同。 於固態基材上❶在一實施例：基材產生電偏㈣方法分佈 布於整個基材;該導;性材料可均勻地分 在-實施例中，該導電性料。朝向該工作表面。 μ . ^ ^ f材枓可出現在該基材的工作表面201249590 IX. INSTRUCTIONS: TECHNICAL FIELD OF THE INVENTION The present invention relates to an abrasive tool and related methods. Accordingly, the present invention relates to the fields of chemistry and materials science. [Prior Art] Many industries use different types of mechanical grinding processes to grind workpieces. For example, the computer manufacturing industry relies heavily on chemical mechanical polishing (CMp) processes to grind ceramic, germanium, glass, quartz, and metal wafers. Such grinding processes generally require the wafer to be placed against a rotating polishing pad made of a durable organic material such as polyurethane. A chemical slurry is used which contains chemicals capable of breaking wafer material and a defined amount of abrasive particles that physically erode the wafer surface. The slurry is continuously applied to the rotating CMP pad and the dual chemical and mechanical forces applied to the wafer enable the wafer to be polished in the desired manner. The distribution of the abrasive particles throughout the polishing pad is an important factor in achieving the quality of the polishing. The top of the polishing pad holds the particles by fibers or apertures that provide friction sufficient to prevent the particles from being drawn out of the polishing pad by the centrifugal force generated by the rotational movement of the polishing pad. Therefore, it is important to keep the elasticity of the top of the abrasive crucible as much as possible to keep the fibers upright as much as possible, and to ensure that there are sufficient openings to accommodate the newly applied abrasive particles. However, one problem that can occur with maintaining the surface of the abrasive pad is the accumulation of abrasive debris from the workpiece, the abrasive pad, and the pad conditioner. This accumulation causes the top of the pad to "glazing" or harden, and the fibers are entangled together. Thus, the surface of the pad is less able to hold the abrasive particles of the slurry. These effects significantly reduce the overall grinding performance of the polishing pad. Further, in the case of use of many polishing pads, the holes for holding the slurry are blocked, and the roughness of the entire polishing surface of the polishing pad is lowered and becomes disordered. The CMP pad dresser can be used to restore the surface of the pad by "c〇mbing" or "cutting" the pad surface. This process is known as "dressing" or "conditioning" the polishing pad. Many types of devices and processes have been used for this purpose. One such device is a disk that incorporates a plurality of superhard crystalline particles (such as diamond particles) to the surface of a metal substrate. However, as semiconductor technology has gradually shrunk to the nanometer scale, it has been proven that current CMP grinding techniques are no longer available. Due to the downsizing of such dimensions, the materials used to construct the circuit components are becoming finer in size and material. The CMP industry is therefore required to provide abrasive materials and techniques to respond to this trend in order to comply with such advances. For example, lower CMP grinding pressures, smaller sized abrasive particles in the liquid, and abrasive 塾 size and characteristics that do not over-grind or damage the wafer. Furthermore, it is necessary to use a crucible to cut the polishing pad into a roughness conforming to the roughness of the smaller abrasive particles, and the abrasive crucible trimmer β which cannot over-trimize the polishing pad has many problems regarding the modification of the CMp method which currently conforms to such fine grinding. For CMP pad dressers, the superabrasive particles must be significantly smaller than those used for the currently known finishing operations. In general, superabrasive particles # are often small, and alpha is often used in conventional metal bases. It is not suitable for retaining and fixing superabrasive particles. Moreover, the smaller size of superabrasive particles. 201249590 inch requires a highly accurate alignment of the particle tip. Precisely, the trim pad is trimmed consistently. Conventional CMP pad dressers can have a particle tip height greater than 5 〇 μ|γι change without compromising the performance of the trim. However, if a dresser requires trimming of the CMP pad and achieving very small and delicate circuit components, this change can make the dresser unusable. In this case, the protrusion of the finished polishing pad has the same level of height variation as the dresser. The highest protrusion exerts the greatest pressure and will therefore scratch the wafer. In addition to the dramatic height variations relative to the fine grinding operation, wafer 7 damage can also result from the abrasive particles themselves. The ruler of these particles is a problem, especially for smaller sized particles that are required for finer grinding operations. Therefore, larger abrasive particles that tend to cause surface damage to the wafer are difficult to remove from the slurry. Some grinding & has been found to join the electricity? The component is flawed, which produces electrochemical polishing in combination with mechanical grinding. Electrochemical mechanical polishing (ECMP) is known in this method. In this type of system, the conductive material is removed from the surface by electrochemical decomposition in combination with mechanical: grinding. Due to the addition of this electronic component, the & method requires weak mechanical or forced ablation: ECMP can therefore be used for grinding when it is only mechanically and/or chemically deformed very easily_qing_, fracture__9), cracked (. In addition, ECMP ^ allows for fine grinding - especially for such surfaces (such as copper circuits). Therefore 'currently looking for suitable applications for fine grinding (such as those due to the gradual reduction in semiconductor volume) The present invention provides a conductive abrasive tool and method that are (not limited to) suitable for use in fine grinding applications as described above. Providing a tool for grinding a workpiece, the tool comprising a solid substrate. The solid substrate may have a polymer matrix doped with a conductive material sufficient to bias the substrate; the solid substrate may also include a a working surface having surface protrusions having a tip-to-tip RA value of less than or equal to about 1Q; the working surface having a small A surface roughness RA value at or equal to about 50. In another aspect, the 'conductive material is an allotrope of carbon. In another aspect, the substrate has from about 2% to about 2%. Up to about 9% by weight of conductive material, which may be uniformly distributed in the substrate, or may be concentrated in certain areas. The present invention also presents a method of making an electrically machined abrasive tool capable of generating a bias voltage. The RA can be included to register a solid substrate to a surface roughness having an RA value of less than or equal to about 5. The solid substrate can comprise a polymer matrix that is doped with a conductive material sufficient to bias the substrate. It may be further included to form a protrusion # on the work surface, the protrusion may have a tip-to-tip RA value of less than or equal to about 10 _; the conductive material is an isomer of carbon, such as graphite or carbon nanotubes In one aspect, the surface of the solid substrate may be pre-registered. In another aspect of the invention, a method of abrading a workpiece is provided. The method of cropping may include providing a solid One of the substrate grinding tools, ° Xuan The bulk substrate has a polymer matrix doped with a conductive material that biases the substrate; the solid substrate has protrusions on a working surface, wherein 201249590 the protrusions can have less than or equal to about 彳〇 tiP) RA value; the worksheet, tip-to-tip (tip-to-frozen surface can also have less than or surface roughness RA value. The method is also... _ electric trace, 曰...仏女匕,, 口口The working surface is to a power source and the working surface is to the diameter of the working piece. The method may further comprise contacting the tip end of the protrusion with the surface of the workpiece and having a tip substantially parallel to the boundary of the workpiece = the interface of the workpiece Xiao's grinding the boundary J ::: mobile electrochemical removal of part of the interface surface of the workpiece:: two = medium, the system can perform more than one step at the same time, such as mechanical and electronic research; in another aspect Let 'a liquid solution be added to the solid substrate. Another example can be borrowed: the liquid solution can establish a conductive path. In the case, the power supply is continuous or discontinuous. Therefore, 'the present invention only describes the initial, broad concepts and more important features', which can be further understood in the following detailed descriptions, and the contributions made in this field may be better. Other features of the present invention will become apparent from the following detailed description and the appended claims. [Embodiment] Definitions The following are definitions of the proper names appearing in the description and patent scope of the present invention. The singular type of words such as "a" and "the" are used unless the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Thus, for example, "-particle" includes one or more of such particles' such as "the metal" includes - or a plurality of such metals. The "asperity" refers to a large object that is purposefully formed on the surface of the substrate. The protrusion has a tip that is well aligned at the tip (the tip). Surface r〇ughness) RA" refers to a method of measuring the roughness of a surface, which is determined by the difference in height between the highest peak on the surface and the lowest valley of the surface. The description of the surface roughness RA is shown in the reference numeral (34) of the third figure. The "tip-t0_tip RA value" refers to a method of measuring the difference in height between the tip of the highest protrusion and the tip of the lowest protrusion. The tip-to-tip RA value is shown in reference numeral (44) of the fourth figure. The term "meta" C refers to a metal or an alloy of two or more metals. Various aspects of the metal material are well known to those of ordinary skill in the art, for example Aluminum, copper, chromium, iron, steel, stainless steel, titanium, tungsten, zinc, hammer, molybdenum, etc. 'includes alloys and compounds. Soft metal alloys well known to those skilled in the art. Common (but not Babbitt alloys) (Babbitt an〇y)" refers to a group of restrictions as described in the art, including lead-based (lead-based, fragment-based, and various combinations thereof. The "broken allotrope physical form" (e.g., crystalline structure) includes graphite, amorphous carbon, diamond, tube, aggregated diamond based, lead-silver, tin-based, cadmium, which means consist of carbon but has different qualities. Examples of carbon isomers are fullerenes, carbon nanorods, glassy carbon (glassy 10 201249590 hexagonal diamond carbon), carbon nanofoam, (lonsdaleite), and Zhao Stone (chaoite). By "ceramic" is meant a hard, generally crystalline, substantially heat and corrosion resistant material that is fired from a non-metallic material (sometimes with a metallic material). Many oxide, nitride and carbide materials are considered ceramics and are well known to those of ordinary skill in the art, including but not limited to oxidation 35, oxygen cutting, nitrogen (tetra), nitrogen cutting, and carbon carbide, tungsten carbide, and the like. . The "nano-abrasive" and "n-abrasive" ("〇-Particle"" are used interchangeably and refer to abrasive particles: having a nanometer size. The size range can vary depending on the particular application. However, in one aspect, the size of the nano-abrasive can range from about 1000 _ to about 1. In another aspect, the size of the nano-abrasive can range from about (10) Γτ to: 10 nm; In the aspect, the size of the nanoabrasive is: about 5 〇 to about 2 〇. Such ruthenium particles may have different elliptical shapes, square shapes, self-forms (euhedra|), etc., which may be early or polycrystalline. A working surface is formed with a protrusion as a grinding application. The "substantially (substa loo% of the case. Christine y)", if you are close to and including but there is a smear, it is used to mean that although the desired is 100. /, there is a small error is The tokens include all the protrusions 2. Columns such as the protrusions of all the surface protrusions and all the protrusions are relatively small. The "about" described in 201249590 is provided by It may provide the elasticity of the end of the numerical range than the value of the "a little above J" or "lower (a丨丨·(1)e be|〇w)". The plural items and structures described here. The elements, constituent elements and/or materials may appear in common general enumerations based on convenience, however these enumerations may be construed as a single component in the list being defined individually or individually, and therefore, a single component in such an enumeration cannot be considered any Separately based on other components that are actually equal in the same list in the general population without the opposite interpretation. Concentrations, quantities, and other numerical data may be presented or represented in a range, but need to be understood The use of this range of forms is based solely on convenience and simplicity, and therefore should be interpreted with considerable flexibility, including not only the values explicitly indicated in the range, but also all individual values and values. The sub-ranges in the range are as explicitly recited as each value and sub-range. For example, a range of values "about 彳 micron to about 5 microns" should be interpreted to include not only the definitely quoted! Micron to about 5 Micrometers, including every value and sub-range within the specified range, therefore, each value included in this range of values, such as 2, 3, and 4, or such as 1-3, 2-4, and 3 The sub-range of -5, etc. This same principle applies to the range in which only one value is quoted, and further, such clarification should be applied to the extent that the flaw is a range or the feature described. 12 201249590 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a new abrasive tool and a method of polishing a substrate. The inventors have discovered that when scratching causes scratches on a workpiece, It is mostly caused by the roughness of the constructed grinding tool, and the hardness of the material is second... 匕, even if the tool is made of a relatively hard material, it has a tip that has been precisely aligned. The abrasive tool can be effectively ground to the surface of the workpiece to a range of nanometer sizes. For example, in the case of CMP grinding, the 曰曰曰#(4) mark is often caused by uneven protrusions on the CMP abrasive raft. Referring again to the figure - 'exemplary purely, an abrasive tool (1〇) shows its uneven protrusion (12), and the guard (14) is shown as being ground by a grinding tool (1〇). Protrusions that are more protruding than the average protrusion height tend to be worth the money (14); otherwise, the height of the average protrusion is less pronounced and the protrusions (12) do not touch (show at 18) work. Piece (1 sentence, and because: almost no or no effect 'or even a high spot on the workpiece (10). These effects may occur when the grinder and = soft material (four), also made of hard (four) material; at =, the trace may be caused by the pressure of θ caused by the protrusion of the higher protrusion of. Therefore, regardless of the hardness of the abrasive tool, the precision of the material is precisely aligned with the completion of the " " 艮 and increase the grinding rate. This is because of the configuration... the roughness of the material caused by different W areas Because of the hardness of the forming abrasive tool, as shown in the second figure, an abrasive tool (2〇) having a protrusion of substantially 13 201249590 uniformity (22) is in contact with the workpiece (24). , will evenly cross a working surface (26). Such a grinder and (2〇) can grind the workpiece (24) evenly, without forming obvious marks to the 'and raised points. The grinding tool will increase the grinding rate because virtually all of the roughness will be ground against the tool being ground, without any single or group of protrusions being exposed to higher workloads than other single- or area protrusions. The grinding rate is proportional to the pressure, so various materials (from hard materials to soft materials) can be used to construct the grinding tool. In a certain two conditions, even further increase the electrical point of view in the grinding process This improves the enthalpy. The so-called electrochemical mechanical polishing (EcMp) can help eliminate certain metal material bumps generated from the workpiece. The oxidation product can then be subtracted from the boundary H sample by electric enthalpy. Being guided onto the metal abrasive fixture causes oxidation of the material in contact with the metal pad. Due to the specific oxidation mode of the contact type, only the raised points of the metal material on the working cow are oxidized. This process is for grinding copper wiring ( Copper trace) or other electrically conductive structures are particularly useful. In a plus, the tool for grinding a workpiece can comprise a solid substrate comprising a polymer matrix doped with a conductive material and electrically biasing the substrate (four) When the solid substrate has a work surface having a tip-to-tip ra value smaller than a 'dog; 0" m dog discharge, the solid substrate has an increased biomass; and the solid substrate has a tip pair The solid substrate exhibits its progressive properties when the tip # ra value is less than or equal to the working surface of the surface roughness of RA value of 50. The conductive material may be an allotrope carbon isomer of carbon. 201249590 shows the electrical conductivity of various materials and can have a different effect than other ECMP materials. Therefore, the choice of carbon isomers depends on a variety of factors, including cost and in the field of ordinary knowledge in the art. Materials that can be selected, non-limiting examples of carbon allotropes useful in the present invention, including graphite, amorphous carbon, diamonds, fune "enes", carbon nanotubes, aggregated Diamond 'meter rod, glass carbon (8) assy carbon), carbon nano foam (carb0ll nan0f0am), hexagonal diamond (lonsdaleite), chaoite (chaoite) and combinations thereof. In addition, other types of carbon elements are also useful in the present invention, non-limiting examples including graphite powder, graphite flakes 'graphite fibers, purified carbon in any form, carbon fibers, carbon powder, carbon black. Furthermore, the conductive material may also include allotropes of carbon and metal particles (such as gold, tin, copper, silver, face, neotung: platinum, lead, metal alloys, fibers coated with conductive materials, Conductive directional: etc. In one embodiment 'the homologue of the carbon is graphite. In another embodiment, the carbon isomer is a carbon nanotube. The conductive material may be any sufficient The substrate is caused to produce an electrically biased solid substrate. In an embodiment, the electrical material comprises from about 20% to about 90% of the solid substrate. In another embodiment, the solid substrate is applied to the sail. The material includes a configuration from about 4% of the material that can be expected to have a variety of configurations. The position of the same axis of the conductive material is especially concentrated at certain points along the line, the lane, or the entire solid base. The position of the material on the material and, preferably, the cloth. The conductivity can be 牯 / also, and this is enough to produce an electrical bias, that is, according to the material used to manufacture the solid substrate, to be studied 15 201249590 Grinding materials, plans for use, technical fields of t have the usual (four) pottery me (6)), etc. The conductive material may be any of the factors vary. On a solid substrate, in one embodiment: the substrate is electrically biased (four) method distributed over the entire substrate; the conductive material can be evenly distributed in the embodiment, the conductive material. Towards the work surface. μ . ^ ^ f material can appear on the working surface of the substrate
上，在又一實施例中，嗜A °基材的表面可為一連續的導電材 料層’又-態樣中，該導電材料均句地設置在該工作表面 上；又一實施例中，該導電材料係一連續層，該連續層呈 現於該基材t低於該表面—深度的地方，且實質上與該工 作表面相互平行’这種構型的實施例會讓該固體基材產生 均勻的偏壓*>又再-實施例中，在該固體基材中可具有複 數導電材料層，而該等層狀結構可實質上相互平行。 可使用各種高分子材料來製造該高分子基質。而且， 向分子只需要能夠形成一摻有導電性物質的固體基材，而 讓該基材產生電偏壓》此外’該固體基材必須能夠具有一 個工作表面，其包含有小於或等於1〇"m之尖端對尖端RA 值的突出物以及一小於或等於50/；m的表面粗輪度RA值。 用於該、高分子基質的高分子非限制性的範例包括聚氨基甲 酸酯（polyurethane)、聚醯胺（polyamides)、聚亞醯胺 (polyimides)、尼龍聚合物（nylon polymer)、聚酯 (polyester)、含二烯的聚合物（diene containing polymers)、聚丙稀酸酯（acrylic polymers)、聚乙烯 (polyethylene)、聚丙晞（polypropylene)、聚苯乙晞 201249590 (polystyrene)、聚對苯二甲酸乙二酯（polyethylene terephthalate)、聚氣乙烯（p0iyViny|Chi〇ride)、聚碳酸酯 (polycarbonate)、丙烯腈一丁二烯—苯乙烯共聚樹脂 (acrylonitrile butadiene styrene)、聚偏二氯乙烯 (polyvinyldiene chloride) 、 聚四 氟乙烯 (polytetrafluoroethylene)、聚曱基丙稀酸甲酉旨（polymethyl methacrylate)、聚乙炔（p〇|yacety|ene)、三元乙丙橡膠 實施例中，該高分子基質包含聚氨基甲酸酯。 在一實施例中’該基材包括大於約重量百分率70 %的 石墨。在一態樣中係利用石墨、Grafoil®或其他可被使用 之具彈性的石墨。該具彈性的石墨型態可為片狀、帶狀或 辮狀。此外’在製造過程中，石墨可喷塗至基材或部分基 材上。 該基材可在該高分子基質以及和導電元素之外包含額 外的添加物。在一實施例中，該額外的添加物的含量係少 於重量百分率25%。能被加入的添加物能修飾該基材的性 質，該添加物可改變該高分子基質特定的性質，除此之外， 可被加入的添加物能改變該固體基材的導電性或機械研磨 性質。可作為添加劑的例子有鑽石（diamond)、碳化蝴（boron carbide)、立方氮化觸（cubic boron nitride)、石梅石 (garnet)、矽土（silica)、鈽土（ceria)、鋁土（alumina)、锆 石（zircon)、氧化銼（zirconia)、二氧化鈦（titania)、氧化猛 (manganese oxide)、氧化銅（copper oxide)、氧化鐵（jron 17 201249590 oxide)、氧 4 匕錄（nickel oxide)、石炭 4 匕石夕（silicon carbide)、 氮化石夕（silicon nitride)、氧化錫（tin oxide)、碳化鈦（titanium carbide)、氮化鈦（titanium nitride)、碳化鶴（tungsten carbide)、氧化釔（yttria)、鋁（Al)、銅（Cu)、鋅（Zn)、鎵（Ga)、 銦（In)、錫（Sn)、鍺（Ge)、鉛（Pb)、鉈（Tl)、鎘（Cd)、銀（Ag)、 金（Au)、鎳（Ni)、鈀（Pd)、紐（Pt)、始（c〇)、鐵（Fe〉、錳（Mn)、 嫣（W)、銷（Mo)、絡（Cr)、組（Ta)、銳（（Nb)、飢（V)、錯（Sr)、 鈦（Tl)、矽（Si)以及其組合物。可使用超過一種以上的添加 物，且其選擇與涵蓋的範圍係於所屬技術領域中具有通常 知識者所能判斷的。 突出物的精確對齊能因此讓研磨工具由較耐久的材料 所建構，該材料可重新舖面或重複利用至一較大程度。在 研磨操作中’該突出物之精確對齊的尖端能夠磨蝕性地研 磨該工具，儘管該方法需要藉由各種研磨料、化學物、還 原/氧化反應物等幫助。 *明各種態樣，該研磨工具以及方法涵蓋有潛 力之工作件的寬闊範圍’中請專利範圍的領域不限制在特 ^ 怨輛作過私’而這種領域係包括任何研磨 ^ _ 形式或技術皆具有可使用性。工作# 的她例包括’但不限制在晶圓、發光二極體、雷射-極：件 鏡子、眼鏡、記憶存取介⑥“ 極體、In a further embodiment, the surface of the A ° substrate may be a continuous layer of conductive material in a state in which the conductive material is uniformly disposed on the working surface; in yet another embodiment, The electrically conductive material is a continuous layer that is present where the substrate t is below the surface-depth and substantially parallel to the working surface. An embodiment of this configuration would result in uniformity of the solid substrate. The bias voltage*> in still another embodiment, may have a plurality of layers of electrically conductive material in the solid substrate, and the layered structures may be substantially parallel to each other. Various polymer materials can be used to manufacture the polymer matrix. Moreover, it is only necessary to be able to form a solid substrate doped with a conductive substance to cause the substrate to generate an electrical bias. In addition, the solid substrate must have a working surface containing less than or equal to 1 〇. "The tip of the tip of the m to the tip RA value and a surface coarse round RA value less than or equal to 50 /; m. Non-limiting examples of polymers for use in such polymeric matrices include polyurethanes, polyamides, polyimides, nylon polymers, polyesters. (polyester), diene containing polymers, acrylic polymers, polyethylene, polypropylene, polystyrene 201249590 (polystyrene), poly-p-phenylene Polyethylene terephthalate, p0iyViny|Chi〇ride, polycarbonate, acrylonitrile butadiene styrene, polyvinylidene chloride (polyvinylidene chloride) Polyvinyl methacrylate, polymethyl methacrylate, polyacetylene (polymethyl methacrylate), polyacetylene (p〇|yacety|ene), ethylene propylene diene monomer, the polymer matrix Contains polyurethane. In one embodiment, the substrate comprises greater than about 70% by weight graphite. In one aspect, graphite, Grafoil® or other elastic graphite that can be used is utilized. The elastic graphite pattern may be in the form of a sheet, a ribbon or a braid. In addition, graphite can be sprayed onto the substrate or part of the substrate during the manufacturing process. The substrate may contain additional additives in addition to the polymeric matrix and to the conductive elements. In one embodiment, the additional additive is present in an amount less than 25% by weight. The additive that can be added can modify the properties of the substrate, the additive can change the specific properties of the polymer matrix, and in addition, the additive that can be added can change the conductivity or mechanical grinding of the solid substrate. nature. Examples of additives that can be used are diamonds, boron carbides, cubic boron nitrides, garnets, silicas, ceria, and bauxites. Alumina, zircon, zirconia, titania, manganese oxide, copper oxide, iron oxide (jron 17 201249590 oxide), oxygen oxide ), carbon carbide, silicon nitride, tin oxide, titanium carbide, titanium nitride, tungsten carbide, oxidation Yttria, aluminum (Al), copper (Cu), zinc (Zn), gallium (Ga), indium (In), tin (Sn), germanium (Ge), lead (Pb), tantalum (Tl), Cadmium (Cd), silver (Ag), gold (Au), nickel (Ni), palladium (Pd), new (Pt), initial (c〇), iron (Fe), manganese (Mn), antimony (W) , pin (Mo), complex (Cr), group (Ta), sharp ((Nb), hunger (V), wrong (Sr), titanium (Tl), bismuth (Si) and combinations thereof. More than one type can be used. Above And the scope of the selection and coverage is within the skill of the art to be judged by one of ordinary skill in the art. The precise alignment of the protrusions allows the abrasive tool to be constructed from a more durable material that can be resurfaced or reused. To a greater extent, the precisely aligned tip of the protrusion can abrasively grind the tool during the grinding operation, although the method requires assistance with various abrasives, chemicals, reduction/oxidation reactants, and the like. In various ways, the grinding tools and methods cover a wide range of potential work pieces. The scope of the patent scope is not limited to the special use of the work. This field includes any grinding ^ _ form or technology Available for use. Her example of work # includes 'but not limited to wafers, light-emitting diodes, laser-poles: mirrors, glasses, memory access 6" poles,
取’丨面、積體電路或者任何A 導電性及/或電介質的結構、石 "^ δ 此外，研磨的細節範圍可隨著被屬、半導體等。 期應用而有所不同β U被研磨之材料與該材料的預 201249590 在本發明之一態樣中係提供研磨— 的方法可包含提供一如上所述的研磨工旦，這樣 基材，其包含可讓該基材產生電偏壓之導物質有:固體 基質。這固體基材在工作表面上可具導電^質的南分子 物卜直古， 大出物，而該突出 物上”有小於或等於10 的尖 工作矣而曰‘ 值，並且該 方法二：小於或等於5〇,的表面粗链度RA值。該 了匕έ將S亥工作表面斑電斧 到m4 衣”冤源連接，並且從工作表面 "作件之界面表面建立—導電途徑。該方 包含利用電化學移除部分工作件 v 上平行w… 面’且沿著實質 而研麻Γ 的方向移動突出物的尖端，進 ::界面表面。該方法任兩個或多個部分可實質上同 帝才呆作或在重複的時間中進行。在一實施例中，建立一導 路徑以及讓突出物的尖端接觸工作件的界面表面係實質 同時進行的。在另一實施例中’建立—導電路徑以及使 〆電化學方式移除部分工作件的界面表面係實質上同時進 勺再於又一實施例中，讓突出物的尖端接觸工作件的 界面表面以及利用電化學移除部分工作件的界面表面係實 質上同時進行的。 為了幫助進行上述流程，可在固體基材中加入液體溶 液’該液體溶液可包含電解質。在—實施財，從工作表 面到工作件界面表面的導電途徑可藉由液體溶液完成；在 -配置中’該固體基材可完全或部分浸置於一液體溶液 中。可使用之電解質非限制的範例包括硫酸、磷酸、胺基 夂有機胺、鄰本二曱酸（phthalic acid)、有機石炭酸、 19 201249590 〇比咬甲酸及其組合物和衍生物。 連結到該基材之工作表面的電源可為連續性的或 該電源可為非連續性的。在一實施例中，_、可為脈 電源，也就是說它是間隔式開和關。在另一實施例中，該 電源可隨著時間逐漸變化。另一實施例中，該電源可隨著 時間逐漸遞增。藉由調整不論是連續或間歇的電源功率可 進行M_e-tUned)研磨，以得到最佳的研磨效果。在― 些例子中’可建立一研磨程式以隨著時間調整電源，如此 可獲得想要的研磨效果。這種調整方式不僅可以改善研磨 品質：還可以減少研磨所耗費的時間。舉例來說，首先可 使用高電壓來移除較大量的材料，接著隨著時間電壓可被 減小’以製造-個有可能更為平坦且精細的研磨。任何製 造本發明各種態樣之研磨工具的方法係包含於本發明的範 缚中》例如在-態樣中係提供—種製造這種工具的方法， 包括配準-固體基材之工作表面的表面粗糙度ra值小於 或等約卿m。該固體基材可包含換雜導電物質的高分子 基質’以讓該基材產生電偏壓。該方法也可包含在工作表 面上形成突出物，其中該粗糖度具有小於或等於的 尖端對尖端RA值。 各種研磨工作件的工具也可根據本發明之方法被製 造。任何具有根據在此揭露之態樣的表面構型以及粗糙度 的研磨工具皆被認為屬於本發明之範疇。範例可包括但不 限制在CMP研磨塾、磨盤、金相顯微鏡的樣品製備研磨 墊、固定磨蝕墊等。 20 201249590 因為突出物會明顯的小於未配準之工作表面的平均表 面粗縫度，所以在形成突出物之前，將研磨工具之工作表 面配準是有利的；或者，在本發明中能考慮獲得 準的固體基材亦為有利的。預先配準的基材具有_被配準 以使表面粗綠度RA值小於或等於約5Q _的卫作表面。 該基材在製造前可練配準，或者取得如此狀㈣基材。 第三圖顯示一固體基材(30)具有一表面粗糙度ra_的 工作表面㈣，為了有效研磨—工作件，冑質上所有沿著 工作表面的穴出物應該與要被.研磨之界面表面接觸，沿著 工作表面而增加表面粗糙度的高峰區域將在該區域產生更 緊密壓擠該界面表面的粗糙度，而產生前述的到痕。依昭 f面粗糖的程度，沿著工作表面的低谷區域中的突出物可、 能不會與界面表面接觸，因此更增加到痕問題。這種在工 作件界面表面之表面粗糙度非均一性 研磨速率，所《精準地配準該研^具之χ作表面^ 低刮痕的頻率以及規模。 各種不同的方法以及工具都能被考量應用在配準固體 基材的工作表面，幾乎任何配準工作表面的方法都能夠被 使用，只要是能夠產生一在此所揭露之容忍範圍内的表面 粗縫度RA值即可，該表面粗縫度RA值的容忍範圍可依 照一所給的研磨工具所要的應用和研磨的相對規模而不 同。必須注意的是可接受之表面粗糙度RA值的範圍也必 須根據在其上所形成之突出物的尖端對尖端RA值的預期 容忍度而定。因此，該工作表面可被配準到能允許所形成 21 201249590 之突出物獲得—能接受之尖端對尖端RAi範圍的表 縫度RA i ’以使得該研磨工具可料研磨卫作件到 期：拋：效果。因A ’在於所屬技術領域中具有通常知識 者一侍知本發明，即擁有設計具一能與預期的研磨程度 相容之表面粗糙度RA值之研磨工具的能力。 " ，於本發明-態樣巾H表面可利㈣平工具進行 丨平配準；^種研磨工具的性質及構型可依照工作件的性 質以及研磨的預期程度而有不同。然而在一態樣中，該研 磨工具可為多晶鑽石（PC_平器，藉由PCD的極堅硬特 性使其可以作為1平工具的良好材料；此外，PCD能夠 ，用到各種㈣形狀以及構型，目此在超高壓力以及超高 '皿度下’ PCD材料(如PCD粉末)可利用燒結方式建構成— PCD创平器。所形成的PCD基材能藉由任何有效的方法 雕刻成預期的剖平構型’如電聚蝕刻、雷射剝蝕法、放電 法（EDM)或者疋其他於所屬技術領域中具有通常知識 者所知的方法。與這種作為创平器或其他pcD工具的p⑶ 材料使用有關的詳細細節以及特定：^的例子，可在2_ 年2月17日申請之申請案「超硬切割器及其相關方法」 (Attorney Docket Ν〇· 24462 Np)中找到，其係可合併於 此作為參考。 儘管各種不同等級的表面粗糙度根據該研磨工具的預 期應用而皆可被考慮’在一態樣中，該表面粗糙度ra值 可小於或等於❸50 。在另一態樣中，該表面粗糙ra 值可小於或等於約2Q在又—態樣中，該表面粗糖度 22 201249590 RA值可小於或等於約ι〇 。 :上述所相的，精準整平的突出物尖端將改善該抛 先研磨工具的拋光研磨性質，並降低橫跨工作表面之突出 物的尖端對尖端RA值。尖端對尖端RA值越低，所得到 ，磨之表面的研磨結果就越精細。因此在形成粗縫度之 則在δ亥研磨工具之工作表面進行cMp加工的一些應用 是有絮助的，這種CMP加工能藉由單獨配準該工作表面 而產生更細緻的研磨結果。 一旦表面經過配準並且選擇性地經過CMp加工，可 藉由任何於所屬技術領域中具有通常知識者所熟知的方法 在表面上形成突出物，所得到的突出物被整平到如在此所 揭露之尖端對尖端RA冑。第四圖顯示一在其上具有突出 物（42)且有尖端對尖端R“（44)的研磨除了突 出物的整平外，橫跨工作表面的粗链度之密度以及圖形也 會=響工具的研磨特性。一工具的研磨速率可依照突出物 的而變化。一方面，當突出物的密度增加，則接觸該 ^物數目、加，另-方面，當突出物度的密度 “ 點’由於所有經由研磨工具產生的壓 力至用的突出物，所以藉由每一個突出物所產生的壓 。因為在研磨速率的機械方面係與接觸面積以及 在工具與工作件之間所產生的壓力有關係，所以形成之粗 撼度的密度可被調整而提供—最適化的研磨速率。因此， 在，發明之一態樣中，可根據預先決定好的圓案使粗趟度 形成於該工作表面上。 23 201249590 各種方&白可考慮來形成粗糙度於該固體基材的工作 表面上因此任何形成符合如在此所揭露之尖端對尖端 RA值的突出物方沐·iTake the 'facet, integrated circuit or any A conductive and / or dielectric structure, stone " ^ δ In addition, the details of the grinding can be dependent on the semiconductor, semiconductor and so on. Depending on the application, the method of providing a grinding material in a manner of the present invention may include providing a polishing machine as described above, such that the substrate comprises The conductive material that allows the substrate to produce an electrical bias is: a solid substrate. The solid substrate may have a conductive southern mineral on the working surface, a large material, and the protrusion has a value of less than or equal to 10, and the method 2: Less than or equal to 5 〇, the surface roughness of the RA value. The 亥 匕έ 工作 工作 工作 工作 工作 到 到 到 到 到 到 m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m The method involves the use of electrochemical removal of a portion of the workpiece v on a parallel w... face' and moving the tip of the protrusion in a direction that is substantially paralyzed, into the :: interface surface. Any two or more portions of the method may be substantially in the same state or in repeated times. In one embodiment, establishing a guide path and allowing the tip end of the protrusion to contact the interface surface of the workpiece is substantially simultaneous. In another embodiment, the 'establishment—the conductive path and the electrochemically removing the interface surface of the portion of the workpiece are substantially simultaneously in a further embodiment, with the tip of the protrusion contacting the interface surface of the workpiece And the interface surface that utilizes electrochemical removal of a portion of the workpiece is performed substantially simultaneously. To aid in the above process, a liquid solution can be added to the solid substrate. The liquid solution can comprise an electrolyte. In the implementation, the conductive path from the work surface to the surface of the workpiece interface can be accomplished by a liquid solution; in the configuration - the solid substrate can be fully or partially immersed in a liquid solution. Non-limiting examples of electrolytes that may be used include sulfuric acid, phosphoric acid, aminoguanidine organic amines, phthalic acid, organic carbolic acid, 19 201249590 guanidine benzoic acid, and combinations and derivatives thereof. The power source attached to the working surface of the substrate can be continuous or the power source can be discontinuous. In one embodiment, _ can be a pulsed power source, that is, it is spaced on and off. In another embodiment, the power source can be gradually changed over time. In another embodiment, the power source can be gradually increased over time. M_e-tUned) grinding can be performed by adjusting the power of the continuous or intermittent power supply to obtain the best grinding effect. In some examples, a grinding program can be built to adjust the power supply over time so that the desired grinding effect can be obtained. This adjustment not only improves the quality of the grinding: it also reduces the time it takes to grind. For example, a high voltage can first be used to remove a larger amount of material, and then the voltage can be reduced over time to produce a more flat and finer finish. Any method of making the abrasive tool of the various aspects of the present invention is included in the scope of the present invention, for example, in the aspect of the invention, a method of making such a tool, including a working surface of a registration-solid substrate. The surface roughness ra value is less than or equal to about m. The solid substrate may comprise a polymeric matrix that is exchanged with a conductive material to cause the substrate to generate an electrical bias. The method can also include forming a protrusion on the work surface, wherein the coarseness has a tip-to-tip RA value that is less than or equal to. Various tools for abrading the work piece can also be made in accordance with the method of the present invention. Any abrasive tool having a surface configuration and roughness in accordance with the aspects disclosed herein is considered to be within the scope of the present invention. Examples may include, but are not limited to, CMP abrasive crucibles, discs, sample preparation abrasive pads for metallographic microscopes, fixed abrasive pads, and the like. 20 201249590 Because the protrusions are significantly smaller than the average surface sag of the unregistered work surface, it is advantageous to register the working surface of the abrasive tool prior to forming the protrusions; or, in the present invention Quasi-solid substrates are also advantageous. The pre-registered substrate has a servant surface that is registered such that the surface roughness greenness RA is less than or equal to about 5Q _. The substrate can be dispensed prior to manufacture, or the substrate can be obtained in such a shape. The third figure shows that a solid substrate (30) has a working surface (4) with a surface roughness ra_. In order to effectively grind the working piece, all the holes along the working surface on the enamel should be the interface to be ground. The surface contact, the peak region that increases the surface roughness along the working surface will create a roughness in the region that more closely compresses the interface surface, resulting in the aforementioned traces. Depending on the extent of the raw sugar, the protrusions in the valley region along the working surface can be in contact with the interface surface, thus increasing the problem of the mark. This non-uniformity of the surface roughness of the surface of the workpiece interface is precisely the frequency and scale of the scratch surface of the tool. A variety of different methods and tools can be considered for registration on the working surface of a solid substrate. Almost any method of registering a working surface can be used as long as it produces a surface roughness within the tolerances disclosed herein. The degree of sag RA can be determined, and the tolerance of the surface roughness RA value can be different according to the application of the given abrasive tool and the relative scale of the grinding. It must be noted that the range of acceptable surface roughness RA values must also depend on the expected tolerance of the tip RA value based on the tip of the protrusion formed thereon. Thus, the working surface can be registered to allow the protrusions formed 21 201249590 to be obtained - an acceptable tip-to-tip RAi range of surface prongs RA i 'to allow the abrasive tool to be abrasively cured: Throw: effect. Since A' is a person of ordinary skill in the art, the invention has the ability to design an abrasive tool having a surface roughness RA value that is compatible with the desired degree of grinding. ", in the present invention - the surface of the towel H surface can be (four) flat tool for the leveling registration; the nature and configuration of the grinding tool can be different according to the nature of the workpiece and the expected degree of grinding. In one aspect, however, the abrasive tool can be a polycrystalline diamond (PC_ flattener, which is a good material for a flat tool by the extremely hard nature of the PCD; in addition, the PCD can use a variety of (four) shapes and The configuration, in the case of ultra-high pressure and ultra-high 'dish' PCD materials (such as PCD powder) can be constructed by sintering - PCD flattener. The formed PCD substrate can be engraved by any effective method. In the desired split configuration, such as electro-convex etching, laser ablation, discharge (EDM) or other methods known to those of ordinary skill in the art, with this as a flattener or other pcD The p(3) material usage details of the tool and the specific: ^ example can be found in the application "Superhard Cutter and Related Methods" (Attorney Docket Ν〇 24462 Np) filed on February 17, 2, 2011. It may be incorporated herein by reference. Although various grades of surface roughness may be considered in accordance with the intended application of the abrasive tool, the surface roughness ra may be less than or equal to ❸50. One aspect Wherein, the surface roughness ra value may be less than or equal to about 2Q. In the recurrence state, the surface roughness sugar 2012 201249590 RA value may be less than or equal to about ι〇. : The above-mentioned phase, the precision leveling protrusion tip will Improving the polishing and polishing properties of the polishing tool and reducing the tip-to-tip RA value of the protrusion across the working surface. The lower the tip-to-tip RA value, the finer the grinding result of the ground surface is. Some applications in which cMp processing is performed on the working surface of the δHai grinding tool are formed by the application of the rough working degree. This CMP processing can produce finer grinding results by separately registering the working surface. Registration and selective processing by CMp can be used to form protrusions on the surface by any method known to those of ordinary skill in the art, and the resulting protrusions are leveled to the tip as disclosed herein. For the tip RA胄. The fourth figure shows a thick chain with a protrusion (42) thereon and a tip to the tip R "(44) except for the leveling of the protrusion, across the working surface. The degree and pattern will also be the grinding characteristics of the tool. The polishing rate of a tool can vary according to the protrusion. On the one hand, when the density of the protrusion increases, the number of contacts is increased, and the other side is highlighted. The density of the material "point" is the pressure generated by each protrusion due to the pressure-to-use protrusions generated by the grinding tool. Because of the mechanical aspect of the polishing rate and the contact area and the tool and work piece Between the pressures generated, the density of the resulting roughness can be adjusted to provide an optimum polishing rate. Therefore, in one aspect of the invention, the coarseness can be made according to a predetermined round The twist is formed on the work surface. 23 201249590 Various squares & whites may be considered to form roughness on the working surface of the solid substrate, thus any protrusion forming conforming to the tip-to-tip RA value as disclosed herein Mu·i
石在了破考慮在本發明的範疇内。這種RA 值的容隸可隨著預期的應用m47·；^的相 子規模肖基材的製作材料以及該基材的預期使用情況而 有二微的不同。因此，一些限制會藉由在粗糙度形成之前， 該工作表面配準的程度而.出現在尖端對尖端RA值上。 於本發明之一態樣中，藉由一修整工具修整該工作表 面而形成粗糙度，修整工具係在所屬技術領域中具有通常 知識者所熟知的。然而，如上所述，目前的修整工具無法 在工具的表面形成具有如在此所述之尖端對尖端ra值 的粗链度，因此，需要具有齊平之切割元件的修整器以形 成這種粗糙度。在一態樣中，該種修整工具可為PCD修 整工具，如上所述，PCD的極堅硬度使其成為一個形成修 整工具的良好材料，因此，PCD能夠被運用來形成各種不 同的切割元件以及切割元件構塑。因此，在超高壓力及超 兩溫度下，PCD材料（如PCD粉末）可藉由燒結方式而建構 成P C D修整工具’所產生的p C D基質能夠被雕刻成預期 的修整工具構型，該構型包含具有非常精確突出及定向的 個別切割元件。如同P C D刨平物一樣，該p c D修整器可 藉由各種不同的有效方法來成型與雕刻，例如電锻钮刻、 雷射剝蝕、放電加工（E D Μ)或者是其他於所屬技術領域中 具有通常知識者所知的方法。與這種作為修整器或其他 PCD工具的pCD材料使用有關的詳細細節以及特定工且 24 201249590 =例子，可在2_年2月17日中請之巾請案「超硬切割 器及其相關方法」（Attorney Docket No_ 24462.NP)中找 到，其係可合併於此作為參考β 除了 PCD修整工具之外，其他具有非常精確整平之切 割元件的工具也可用於形成本發明之研磨工具的粗糙度， 舉例來說，當超研磨工具與硬焊金屬工具結合時會因為該 工具在因熱變形的特性而在冷卻時變形，超研磨顆粒通常 無法精確地整平。然而，超研磨顆粒可與使用樹脂或者其 他有機層當作顆粒基材的工具結合。這種工具的例子可在 2004年12月30號申請之美國專利申請案第11/〇26 544 號以及在2005年9月9號申請之美國專利申請案第 1 1/223,786 E中找到，該等專利案皆可合併於此作為來 考0 〆 雖然可考慮各種不同的研磨結果能根據研磨工具的預 期應用而考量，但在一態樣巾，該尖端對尖端ra值可小 於或等於約10 在另―態樣中，該尖端對尖# RA值 可小於或等於約5 "m ;在又一態樣中，該尖端對尖端RA 值可小於或等於約i ;又在另―態樣中，該$端對尖端 RA值可小於或等於約0.8 。 各種能製造本發明之研磨工具的材料皆能被考慮。因 為突出物精準地被整平，且實質上全部皆與工作件的界面 表面接觸，所以不管研磨墊有多堅硬都能避免產生到痕。 因此，實際上任何能形成在此所述之RA容忍值的突出物 的材料皆能用於形成這種研磨工具。藉由於所屬技術領域 25 201249590 中具有通常知譎告拼姑τ ra 考根據工具的特定應用能挑選出 磨工具材料。舉例决祥^ ®行疋的研 J來說，右奈米鑽石能與工具結合，盆 有助於利用材靱袓4⑽ Z、刑· 4决速將鑽石弄濕，以提高 (retention);假芒神 w Γιτ 办 κ π ^ I性研磨漿或電解質溶液被用來幫助研 磨，將有助於選擇能對私 擇此對於泥漿中之特定酸提供抵抗能力的 材料&夕卜+同材料的氧化能力也會影響材料的使用情 況，特別是在有關電解質溶液的研磨應用方面。 如上所述，任何能在表面形成突出物且在此所提及的 谷忍範圍内的材才斗皆可·去虎 何科s 了考慮在本發明之範疇中。特別的是 (但非限制性的），續研麻 ]4研磨工具可包含導電材料或各種添加 物，如銘、鋼、鋅、鎵、銦、錫、錯、錯、銘、録、銀、 金、鎳、鈀、鉑、鈷、鐵、錳、鎢、翻、鉻、鈕、鈮、釩、 錯、鈦、石夕以及其混合物，包含複合材料、高分子以及陶 瓷材料。 在本發明之-態樣令，該研磨工具可包含導電材料或 者具有炼點低於約7戮之金屬的添加物，這種柔軟的金 屬添加物可提供各種生產的優勢，舉例來說，#由金屬延 展性的增加，越柔軟的金屬越容易操作。其可幫助突出物 的形成，特別是有關以修整器切割突出物的方面。表一顯 示一些柔軟金屬的非限制範例，其係依照金厲的熔點所排 列0 26 201249590 表 一 柔軟金屬The stone is considered to be within the scope of the present invention. The capacity of this RA value can vary slightly depending on the intended application of the phase-scale material of the substrate and the expected use of the substrate. Therefore, some limitations will occur at the tip-to-tip RA value by the degree to which the working surface is registered before the roughness is formed. In one aspect of the invention, the work surface is finished by a dressing tool to form a roughness, and the dressing tool is well known to those of ordinary skill in the art. However, as noted above, current dressing tools are unable to form a thick chain having a tip-to-tip ra value as described herein on the surface of the tool, and therefore, a trimmer having a flush cutting element is required to form such a roughness. degree. In one aspect, the dressing tool can be a PCD dressing tool. As described above, the extreme rigidity of the PCD makes it a good material for forming a dressing tool, so that the PCD can be used to form a variety of different cutting elements and The cutting element is constructed. Therefore, under ultra-high pressure and super-temperature, the PCD material (such as PCD powder) can be engraved into the intended dressing tool configuration by the pCD matrix produced by the PCD dressing tool by sintering. The type contains individual cutting elements with very precise protrusion and orientation. Like the PCD planer, the pc D dresser can be formed and engraved by a variety of different effective methods, such as electric forging, laser ablation, electrical discharge machining (ED Μ) or other Usually known by the knowledge. Detailed details regarding the use of this pCD material as a dresser or other PCD tool and the specific work 24 201249590 = example, please request the towel in the February 2nd of February 2, "Superhard Cutter and its related Found in Attorney Docket No_ 24462.NP, which can be incorporated herein as a reference. In addition to the PCD dressing tool, other tools with very precisely flattened cutting elements can also be used to form the abrasive tool of the present invention. Roughness, for example, when a superabrasive tool is combined with a brazed metal tool, the superabrasive particles are often not accurately leveled because the tool deforms upon cooling due to thermal deformation characteristics. However, superabrasive particles can be combined with tools that use a resin or other organic layer as a particulate substrate. An example of such a tool can be found in U.S. Patent Application Serial No. 11/26,544, filed on Dec. 30, 2004, and U.S. Patent Application Serial No. 1 1/223,786, filed on Sep. The patents can be incorporated herein by reference. Although it is contemplated that various different grinding results can be considered in accordance with the intended application of the abrasive tool, in the case of an exemplary towel, the tip can have a tip ra value of less than or equal to about 10 In another aspect, the tip-to-tip # RA value may be less than or equal to about 5 "m; in yet another aspect, the tip-to-tip RA value may be less than or equal to about i; The $end to tip RA value may be less than or equal to about 0.8. Various materials capable of producing the abrasive tool of the present invention can be considered. Since the protrusions are accurately leveled and substantially all in contact with the interface surface of the workpiece, no matter how hard the polishing pad is, it is possible to avoid the occurrence of marks. Thus, virtually any material that forms the protrusions of the RA tolerance values described herein can be used to form such abrasive tools. The tool material can be selected according to the specific application of the tool according to the general knowledge in the technical field 25 201249590. For example, the research of J. Co., Ltd., the right nano diamond can be combined with the tool, the basin helps to use the material 4 (10) Z, the criminal speed to wet the diamond to improve (retention);芒神 Γιτ κ π ^ I-based slurry or electrolyte solution is used to help grinding, will help to choose the material that can be used to resist the specific acid in the mud & Oxidation capacity also affects the use of materials, especially in the application of grinding solutions for electrolyte solutions. As described above, any material that can form a protrusion on the surface and is within the range of the valleys mentioned herein can be considered in the scope of the present invention. In particular (but not limited to), Continuing Research] 4 abrasive tools may contain conductive materials or various additives such as Ming, Steel, Zinc, Gallium, Indium, Tin, Wrong, Wrong, Ming, Record, Silver, Gold, nickel, palladium, platinum, cobalt, iron, manganese, tungsten, turn, chrome, niobium, tantalum, vanadium, mis, titanium, shixi and mixtures thereof, including composite materials, polymers and ceramic materials. In the aspect of the invention, the abrasive tool can comprise a conductive material or an additive having a metal having a refining point of less than about 7 Å. This soft metal additive can provide various production advantages, for example, # The softer the metal, the easier it is to operate by the increased ductility of the metal. It can aid in the formation of protrusions, especially in terms of cutting protrusions with a dresser. Table 1 shows a non-limiting example of some soft metals, which are ranked according to the melting point of Jin Li. 0 26 201249590 Table 1 Soft metal
34二炫點較低的金屬而被用來 中，各種合金也w / 研磨工具的態樣 _ 。使至少兩種金屬或一種金屬與 y θ %成合金通常會降低該合金的溶點，此種合金可 、疋由兩肖-種或者是其他多種組成所形成的合金。表 ”》頁’、二這種合金的非限制範例，其中在表二中的重量 百刀比（Wt /〇)疋金屬合金中的第一個元素。 27 201249590 合金 銘 -石夕 巴 弼氏合金 銅 -鎮 紹 -銅 鋁 -鎮 銅 -鋅 鋁 -鍺 銅 -錫 鋁 -錫 錫 -鋅 錫 -鉈 表二34 two brighter metal is used in the middle, various alloys also w / grinding tool aspect _. Alloying at least two metals or a metal with y θ % generally reduces the melting point of the alloy, and the alloy may be an alloy formed by two or a plurality of other compositions. Table "" page, a non-limiting example of this alloy, which is the first element in the weight percent of the Wr / 疋 metal alloy in Table 2. 27 201249590 Alloy Ming - Shi Xi Ba Shi Alloy copper-镇绍-copper-aluminum-town copper-zinc-aluminum-bismuth-tin-iron-tin-zinc-zinc
480 60480 60
548.2 437-450 51.6 457 425 99.3 420.0 227548.2 437-450 51.6 457 425 99.3 420.0 227
其具有高氧化物能力 有用金屬的範例可包括鋁金屬 並且能快速地讓鑽石變濕。例如，有用的合金可包括但不 限制在鋁-矽合金、碳化矽以及焊接合金（如錫·鋼-銀合金卜 在製造研磨工具令使用金屬的額外好處是可以在工具 上導入電偏壓，進而藉由電解反應幫助研磨。 根據本發明各種態樣的研磨工具能被應用在具有或沒 有研磨顆粒的研磨應用中。因此，在一態樣中，一工作件 能在缺乏研磨顆粒的情況下被研磨，在這種情況下，因為 6亥大出物的尖端之移動橫跨欲被研磨之表面，所以會產生 物理/4研磨。冑由化學研磨t、電解反應等能夠幫助這種 28 201249590 沒有研磨料的研磨程序。然而，在另一態樣中，奈米研磨 顆粒能被涵蓋而增加研磨該工作件的速率。這種奈米研磨 顆#可被匕3在研磨工具本身内部，或者能夠在研磨操作 過程之前或之中從外部施加。舉例來說，在一態樣中，具 有奈米顆粒w研冑聚可被用於研磨玉具的工作表面上，或 β工作件的界面表面。在一實施例中，具有奈米顆粒的研 磨！以及電解質溶液可一起使用。在另一態樣中，奈米顆 粒可配置在至少一部份研磨工具之工作表面，作為換入的 : 複合材料。這些顆粒可被混合或者是在製造過程中被涵蓋 在被用來構成該研磨工具的材料中。為了將這些奈米㈣ 均勻分散在基質材料中，研磨顆粒可用濕潤該基質材料的 杀橋劑預先塗佈。因此該奈米研磨顆粒會被設置在突出物 的乂端也因此可增加该工具的研磨機能，當該工具磨損 時，更深層的奈米研磨顆粒會被顯露，這將有助於研磨操 作。在又一實施例中，該奈米研磨顆粒可在突出物形成之 前固定在該研磨工具的工作表面上。 雖然任何能夠幫助研磨工作件的奈米研磨顆粒皆可被 考慮在本發明之申請專利範圍的範疇内，但特定的範例可 包括以下物質或由以下物質所組成：鑽石（diam〇nd)、碳 化删（boron carbide)、立方氮化爛（cubjc boron nitride)、 石榴石（garnet)、矽土（Siiica)、鈽土（cer·丨 a)、鋁土（a|umina)、 锆石（zircon)、氧化鍅（Zj「c0nja)、二氧化鈦（titania)、氧化 錳（manganese oxide)、氧化銅（COpper oxjde)、氧化鐵〇Γ〇η oxide)、氧化鍊（nickel oxide)、碳化石夕（silicon carbide)、 29 201249590 氮化石夕（silicon nitride)、氧化錫（tin oxicle)、碳化鈦（titanium carbide)、氣化鈦（titanium nitride)、碳化鎢（tungsten carbide)、氧化釔（yttria)及其混合物；除此之外，也可使 用各種其他的陶瓷材料，在一特定的態樣中，該奈米研磨 顆粒可包括奈米鑽石顆粒或由其所組成。另外，雖然奈米 研磨顆粒已經大致討論過，且與在此所揭露的各種研磨工 具態樣有Μ ’所以需要了解的是’為了特定的應用，微米 尺寸的研磨顆粒也可使用，且亦包括於本發明之範疇中。 以下範例敘述本發明各種製造具塗佈的超研磨顆粒以 及工具《該fe例僅作為描述，再此並非意欲限制本發明。 實施例 聚氨基甲酸酯圓盤（disk)係摻有碳奈米管 材的50%’該圓盤係設置在一旋轉平台上，且藉由^ 创平器配準至粗糖度（RA)M 5微米。使用—pcD修整 ϋ以產生大約之均句的突出物。使用該所建構的 研磨墊，並結合電解溶液來研磨銅電路層。 需要瞭解的是以上所述之排列皆僅是在描述本發明原 貝！的應用’許多改變及不同的排列亦可以在不脫離本發明 之精神和範圍的情況下被於本領域具通常知識者所設想出 來’而申請範圍也涵蓋上述的改變和排列。因此，儘管本 :明被特定及詳述地描述呈上述最實用和最佳實施例，於 域通*知識者可在不偏離本發明的原則和觀點的情 况下做許多如尺寸、材料、 組裝和使用等變動。 樣式、功此、操作方法、 30 201249590 【圖式簡單說明】 第—圖係既有研磨工具的剖視圖。 第：圖係本發明一實施例之研磨工具的剖視圖。 第二圖係本發明另一實施例之固體基材的剖視圖。 第四圖係本發明又一實施例之研磨工具的剖視圖。 【主要元件符號說明】 (10)研磨工具 （12)突出物 (14)工作件 （16)到蝕 (20)研磨工具 （22)—致高度 (24)工作件 （26)工作表面 (3〇)基材 （32)工作表面 (34)表面粗糙度ra值 (40)研磨工具 （42)突出物 (44)尖端對尖端RA值 31It has high oxide capacity. Examples of useful metals can include aluminum metal and can quickly wet diamonds. For example, useful alloys may include, but are not limited to, aluminum-bismuth alloys, tantalum carbides, and solder alloys (eg, tin-steel-silver alloys. In the manufacture of abrasive tools, the additional benefit of using metals is that electrical bias can be introduced into the tool, The grinding is further assisted by an electrolytic reaction. The abrasive tool according to various aspects of the present invention can be applied to abrasive applications with or without abrasive particles. Thus, in one aspect, a workpiece can be in the absence of abrasive particles. It is ground, in this case, because the tip of the 6 liter large object moves across the surface to be polished, physical/4 grinding occurs. 胄 Chemical polishing t, electrolytic reaction, etc. can help this 28 201249590 There is no grinding process for the abrasive. However, in another aspect, the nano-abrasive particles can be covered to increase the rate at which the workpiece is ground. This nano-grinding # can be 匕3 inside the grinding tool itself, or Can be applied externally before or during the grinding operation. For example, in one aspect, the nanoparticle w can be used to grind the working surface of the jade. Upper, or interfacial surface of the beta working piece. In one embodiment, the grinding with nanoparticles! and the electrolyte solution can be used together. In another aspect, the nanoparticle can be disposed in at least a portion of the abrasive tool Working surface, as a replacement: composite material. These particles can be mixed or covered in the manufacturing process to form the material of the grinding tool. In order to uniformly disperse these nano (4) in the matrix material, grinding The particles may be pre-coated with a bridging agent that wets the matrix material. Thus the nano-abrasive particles will be placed at the ends of the protrusions and thus increase the grinding function of the tool, and when the tool wears, deeper nano-particles The abrasive particles will be revealed which will aid in the grinding operation. In yet another embodiment, the nanoabrasive particles can be secured to the working surface of the abrasive tool prior to formation of the projections. Nano abrasive particles can be considered within the scope of the patent application scope of the present invention, but specific examples may include the following substances or Diamond: diam〇nd, boron carbide, cubjc boron nitride, garnet, Siiica, cer·丨a, bauxite a|umina), zircon, zirconium oxide (Zj "c0nja", titanium dioxide (titania), manganese oxide (manganese oxide), copper oxide (COpper oxjde), iron oxide 〇Γ〇 oxide), oxidized chain ( Nickel oxide), silicon carbide, 29 201249590 silicon nitride, tin oxicle, titanium carbide, titanium nitride, tungsten carbide And yttria and mixtures thereof; in addition, various other ceramic materials may be used. In a particular aspect, the nano-milled particles may comprise or consist of nano-diamond particles. In addition, although nano-abrasive particles have been generally discussed and are inconsistent with the various abrasive tooling features disclosed herein, it is understood that 'micro-sized abrasive particles can also be used for specific applications, and include Within the scope of the invention. The following examples are illustrative of various articles of the invention for the application of coated superabrasive particles and tools. The examples are for illustrative purposes only and are not intended to limit the invention. EXAMPLES Polyurethane disks are 50% doped with carbon nanotubes. The discs are placed on a rotating platform and registered by a flattener to coarse sugar (RA) M. 5 microns. Use -pcD to trim ϋ to produce an approximation of the average sentence. The copper circuit layer is ground using the constructed polishing pad in combination with an electrolytic solution. It should be understood that the above arrangement is only for describing the original shell of the present invention! The application of the present invention is intended to be <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Therefore, although the present invention has been described in a specific and detailed manner as the most practical and preferred embodiments described above, the skilled person can do many things such as size, material, and assembly without departing from the principles and concepts of the present invention. And use and other changes. Style, function, operation method, 30 201249590 [Simple description of the diagram] The first diagram is a cross-sectional view of the abrasive tool. BRIEF DESCRIPTION OF THE DRAWINGS Fig. is a cross-sectional view showing an abrasive tool according to an embodiment of the present invention. The second drawing is a cross-sectional view of a solid substrate according to another embodiment of the present invention. The fourth figure is a cross-sectional view of an abrasive tool according to still another embodiment of the present invention. [Main component symbol description] (10) Grinding tool (12) protrusion (14) work piece (16) to eclipse (20) grinding tool (22) - height (24) working piece (26) working surface (3 〇 ) substrate (32) working surface (34) surface roughness ra value (40) abrasive tool (42) protrusion (44) tip to tip RA value 31