201239898 六、發明說明： 【發明所屬之技術領域】 本發明之實施形態係關於具備將放射線轉換成可視光之 螢光體層之閃爍器面板、及使用該閃爍器面板之放射線檢 測器。 【先前技術】 先前’醫療用或工業用非破壞檢查等之數位放射線檢測 器，主流為如電腦放射攝影（以下記為「CR」）或平面檢測 器（以下記為「FPD」）之將入射線X射線在螢光體層轉換成 可視光之方式。 作為螢光體層’在大部份之FPD中使用添加鉈之碘化鉋 (Csl . T1)，又，在一部分之CR裝置中使用添加銪之溴化 鉋（CsBr: Eu)。該等材料皆因以真空蒸鍍法易成柱狀結晶 之理由而使用。 例如，使用Csl . T1之閃爍器面板，基本為於具有放射 線透射性之玻璃等之支持基板上塗佈反射膜，且於其上成 膜螢光體層之Csl : T1之構成。 通過被攝體自X射線源入射之X射線，在如此之構成之 閃爍器面板中轉換成可視光《若使用乂射線光子進行說 明，則光子在螢光體層内之發光點轉換成可視光。光自發 光點與入射光子之向量毫無關係地發散至八方。此處，由 於螢光體層為粗3〜10 μηι之支柱構造，故藉由支柱間之隙 縫與CsI(CsI之折射率=1.8)之折射率之差，某_比例之發 光光子通過支柱内而來到閃爍器面板之表面。關於發散至 161746.doc 201239898 比鄰近之支柱遠之光，橫切多數之支柱間之光學界面而發 散至螢光體層之面方向之概率較低，若到達某一界面則最 終封閉於該支柱内，而來到閃爍器面板之表面。基於如以 上般之作用，設為支柱構造之螢光體層，不會使發光那麼 滲漏，而將發光傳遞至此後之裝置（例如，FPD中具有包含 光電二極體之複數個受光面之TFT基板），故可獲得解析度 特性比較高之閃爍器層。 該支柱間之隙縫部分之比率，可以螢光體層之成膜條件 而加以變^於賴條件中，有基板溫度、壓力、蒸鑛速 度等，藉由改變該等參數’可將填充率（相對於螢光體層 全體之支柱部分之比例）劃分為約自7〇%至1 〇〇%。 又，反射膜具有使朝向支持基板之方向之發光光暫且返 回至螢光體層之表面而提高閃爍器面板之感度之功能。 螢光體層之成膜結束後，於支持基板上進而塗佈防濕 膜，但該防濕膜會在某種程度上侵入成上述之支柱構造之 螢光體層之隙縫部分。作為防濕膜之材料，使用聚對二甲 苯樹脂等之有機CVD膜。有機CVD膜具有可沿隨著支柱構 造之凹凸構造而以大致均一之膜厚塗佈之優點。 作為使用螢光體層之FPD之一例，有於複數個受光元件 排列成1維或2維狀之影像感應器上貼合閃爍器面板之形 態。成如此之構造之FPD之解析度.感度特性，會受到閃爍 器面板之特性之影響。即，上述之CsI之支柱構造與反射 膜之功忐左右著FPD之特性（例如日本特開2〇06_58〇99號公 報（第4、5頁，圖3)) » 161746.doc 201239898 先前之閃爍器面板，如上述般以真空蒸鍍法與CVD法之 比較簡便之方法，可成為兼具解析度特性與防濕特性之特 性。 但，若製作製造條件不同之閃爍器面板而進行加濕試 驗，則於防濕特性中可見差異。例如，比較填充率79%、 具有膜厚350 μηι之螢光體層之閃爍器面板、與填充率 88%、具有膜厚500 μιΏ之螢光體層之閃爍器面板之情形， ’·’£ 60 C 80 /〇-1 〇〇〇小時放置時之3 Lp/mm下之圖像解析度 (CTF: C0ntrast Transfer Functi〇n)之值，分別與加濕前之 103%、3 1 %產生較大之差異。 原本，有機防濕膜之水分透過率，一般為（每日數g/m2 左右），並非完全切斷水蒸氣。若在加濕狀態下放置閃爍 器面板，則透過防濕膜之水蒸氣會浸入螢光體層，且螢光 體層因水分而成為膨潤狀態。此時，有螢光體層鄰接之支 柱發生合體.粗大化，而導致產生解析度特性降低之情 形。 根據本閃爍器面板之實施形態，在具備包含複數個柱狀 結晶，且將放射線轉換成可視光之螢光體層、支撐上述螢 光體層之基板、及包覆上述螢光體層與上述基板之至少一 部分之有機防濕膜之閃爍器面板中，上述有機防濕膜填充 互相鄰接之上述柱狀結晶彼此之隙縫，而到達至上述基 板。 【實施方式】 以下，參照圖式而說明本發明之實施形態。 161746.doc 201239898 (閃爍器面板之構造） 圖1係顯示本發明之一實施形態之閃爍器面板之全體構 造。 閃爍器面板1 0 ’於正反兩面上分別黏貼PET(聚對苯二甲 酸乙二酯）薄片而形成反射膜2a、2b之CFRP(碳纖維強化塑 膠）製基板1之表側表面上設置有螢光體層3，進而以覆蓋 該螢光體層3之表面及基板丨之側面之方式而形成有機防濕 膜4。 又’螢光體層3包含複數個柱狀結晶5，有機防濕膜4侵 入鄰接之柱狀結晶5之隙縫。該侵入程度，可以有機防濕 膜侵入深度11及塗佈殘存深度12進行評價。 (閃爍器面板之製造方法） 接著’說明該閃爍器面板1 〇之製造方法。 首先’洗淨正反兩面上黏貼PET薄片而形成反射膜2a、 2b之CFRP製基板1。 接著，將基板1與收納螢光體材料之坩堝在互相對向之 狀態下收納於真空蒸鍍裝置内，將裝置内之壓力、基板i 之溫度、掛禍溫度等調節至適當之值，而進行真空蒸纪直 到附著於基板1之螢光體層3成為所期望之狀態。 進而’將形成螢光體層3之基板1自真空蒸鍍裝置取出並 移至CVD裝置中’且將藉由將二聚對二曱苯原料加溫至 650°C而產生之自由基解離氣體送入CVD裝置中，於基板丄 與螢光體層3之必要之面上形成有機防濕膜4而成閃爍器面 板10。 161746.doc 201239898 (放射線檢測器） 使用上述之閃爍器面板10，貼合於在玻璃基板上以1維 或2維狀排列有複數個光電二極體受光元件之影像感應器 上’藉此可製作放射線檢測器。· (解析度特性） 為研究閃爍器面板10之解析度特性，製成複數個將圖j 所示之螢光體層3設為Csl : T1，且使該螢光體層3之填充 率與膜厚變化之樣本。 即’相對於填充率，藉由製作填充率：86〜90%之螢光 體層3之步驟（製程a)、製作填充率：77〜81 %之螢光體層3 之步驟（製程B)、及製作填充率：71〜75%之螢光體層3之步 驟（製程C)之3種步驟，而準備填充率不同之樣本。 螢光體層3之填充率，可藉由自以真空蒸鍍法使csi螢光 體層於基板上成膜時之基板溫度（1〇〇〜250°C)、壓力（10_5〜 1 Pa)、成膜速度（1〜50 μηι/分鐘）、基板旋轉速度（1〜20 rpm)、及其他裝置内之構造物之形狀、尺寸等選擇適當之 參數，而設為所期望之值。 具體而言，在製程A中，設為基板溫度200。(：、壓力0.4 Pa、成膜速度1 μηι/分鐘’在製程b中，基板溫度i6〇°c、 壓力1〇3 Pa、成膜速度1 μηι/分鐘，在製程c中，基板溫度 140 C、壓力1 〇_3 Pa、成膜速度2 μηι/分鐘。基板旋轉速度 皆設為10 rpm。又，在製程B、C中，使坩堝之位置相較於 製程A更為遠離。 又’相對於螢光體層3之膜厚，準備200、350、500 μιη 161746.doc 201239898 之3種類。 圖2係顯示相對於螢光體層3之膜厚、填充率不同之7種 類之樣本’持續加濕直至6 〇 t · 8 0 % -10 0 0小時之時之解析 度（CTF)特性之變化者。此處，作為解析度特性，顯示在3 Lp/mm下之CTF值。 根據圖2之結果，製程Α·膜厚500 μπι之樣本之解析度降 低顯著，其次’製程Β_膜厚5〇〇 μηΐ2樣本中亦可見解析度 之降低。 圖3係顯示1〇〇〇小時後之解析度（CTF)之殘存率。 根據圖3之結果獲知，若關注相同之膜厚50〇 μπι，則填 充率越低，殘存率越大。又，若關注在同一製程内⑺與 C) ’則膜厚500 μπι之樣本中可見解析度降低，另一方面， 3 50 μπι之樣本之解析度幾乎無降低。 為發現用以概括說明該等現象之法則，觀察完成之螢光 體層之斷裂面。 其結果，如圖1所示，發現有機防濕膜4侵入螢光體層3 之柱狀結晶5之隙縫之侵入深度丨i根據樣本之不同而有差 異。即，獲知製程A(填充率88%)之樣本之侵入深度u為約 200 μπι，製程B(填充率79%)為約350 μπι，製程c(填充率 73%)為約500 μπι »如圖4所示，若以2次式近似將該等資料 繪圖於圖表而製成之曲線，則為： (侵入深度（μπι)) = 0·5556χ(填充率（％))2_1〇9 44χ(填充率）+ 5528.9……（式 1)。 另，侵入深度11，基於以SEM(掃描式電子顯微鏡）觀察 161746.doc 201239898 螢光體層3之斷裂面時，使螢光體層3之膜於獏厚方向裂門 時，因架設於雙方之有機防濕膜4與雙方一同拉伸而產: 之弦狀之殘存物之有無而判^ u螢光體層3之表面 側至基請，於深度方向依序觀察，而決定弦狀之殘存 物消失之處之深度為侵入深度U。 若螢光體層3之膜厚大於侵入深度u，則會產生塗佈殘 存深度12 °塗佈殘存深度12為（螢光體層3之膜厚㈣)_(侵 入深度11 (μιη))。 圖5係顯示相對於塗佈殘存深度12，繪圖解析度(CTF)殘 存率之圖表。 根據圖5所示之結果獲知，若塗佈殘存深度12超過〇，則 會發生CTF之降低’ ^為G以下，則不會發生CTF之降低。 右將其以支柱構造之變化進行說明，則可認為，以有機 ^濕膜4塗佈支柱之部分，即使因加濕而支柱膨潤，利用 沿支柱形狀塗佈之有機防濕膜4，仍將保持加濕前之形 狀，與此相對，未以有機防濕膜4塗佈支柱之部分，由於 於鄰接之支柱間無障壁部分，因此依序反復合體粗大化， 而招致螢光體層之解析度降低。 根據以上之研究結果， (螢光體層之膜厚τ(μηι)⑷侵人深度Η—))......(式2) 為可獲侍所期望之特性之螢光體&，將式i代入式2， (營光體層之膜厚t)$Q5556x(填充率D)2_lG9 44χ(填充率 ϋ) + 5528·9…”·（式 3) ' 為防濕特性優良之螢光體層3。此處設螢光體層之膜厚為 161746.doc 201239898 Τ(μΐΉ) ’填充率為D(°/。），侵入深度為Η(μπι)。 具體而言，相對於螢光體層3之膜厚為2〇〇 μηΐ2閃爍器 面板10 ’期望設螢光體層3之填充率為88%以下，相對於 膜厚為350 μιη之閃爍器面板1〇，期望設螢光體層3之填充 率為79%以下。又，相對於膜厚為5〇〇 μιη之閃爍器面板 1 〇，期望設填充率為73%以下。 另’藉由使螢光體層3之膜厚未達500 μηι，可較廣地選 取用以使解析度特性不會降低之填充率之範圍。 (本實施形態之效果） 如以上般，藉由關注塗佈殘存深度12，發現以一個參數 區別相對於加濕試驗、解析度特性易下降之閃爍器面板1〇 與不易下降者，且發現可以一個式子（式3)而獲得所期望之 螢光體層之條件。 即，藉由設塗佈殘存深度12為〇，且有機防濕膜4填充柱 狀結晶5彼此之隙缝而到達基板丨，即使因加濕使得柱狀結 晶5膨潤，藉由有機防濕膜4，仍可保持加濕前之形狀。 因此，可提供一種即使在6(rc _8〇%1〇〇〇小時之加濕 下，仍不會使解析度特性降低之閃爍器面板及使用該閃爍 器面板之放射線檢測器。 (其他實施形態） 作為基板1，不僅上述實施形態中顯示之CFRp基板，亦 可選擇非結晶碳、石墨、玻璃、鈹、鈦、鋁、及該等之合 金、陶瓷（氧化鋁、氧化鈹、氧化鍅、氮化矽）、及工程塑 膠等。又，作為螢光體層3，不僅CsI，使用^汾時亦可獲 161746.doc •10· 201239898 得相同之效果。 又，作為上述實施形態之放射線檢測器，作為影像感應 器，使用複數個光電二極體受光元件以1維或2維狀排列於 玻璃基板上者，此外，亦可使用CCD、及CMOS等。 【圖式簡單說明】 圖1係顯示本發明之一實施形態之閃爍器面板之構造之 剖面圖。 圖2係顯示在改變螢光體層之膜厚與填充率之情形下， 持續加濕直至60。(： -80%-1 〇〇〇小時之時之解析度（CTF)特性 之變化之圖表。 圖3係顯示改變登光體層之膜厚與填充率之情形之丨 小時加濕後之解析度（CTF)之殘存率之表。 圖4係顯示勞光體層之填充率與有機防濕膜之侵入深度 之關係之圖表。 圖5係顯示 存率之圖表。 塗佈殘存深度與基於_小時加濕之CTF殘 【主要元件符號說明】 1 基板 2a 反射膜 2b 反射膜 3 螢光體層 4 有機防濕膜 5 柱狀結晶 10 閃爍器面板 161746.doc 201239898 11 12 有機防濕膜侵入深度 塗佈殘存深度 161746.doc •12·[Technical Field] The embodiment of the present invention relates to a scintillator panel including a phosphor layer that converts radiation into visible light, and a radiation detector using the scintillator panel. [Prior Art] Previously, the digital radiation detector for medical or industrial non-destructive inspection, such as computer radiography (hereinafter referred to as "CR") or planar detector (hereinafter referred to as "FPD"), will be incident. The way in which the line X-rays are converted into visible light in the phosphor layer. As the phosphor layer, a bismuth iodide planer (Csl. T1) was used for most of the FPD, and a bismuth bromide planer (CsBr: Eu) was used for a part of the CR device. These materials are all used for reasons of easy columnar crystallization by vacuum evaporation. For example, a scintillator panel using Csl. T1 is basically a structure in which a reflective film is coated on a support substrate having a radiation-transmissive glass or the like, and a phosphor layer of Csl : T1 is formed thereon. The X-ray incident from the X-ray source of the subject is converted into visible light in the scintillator panel thus constructed. If the ray-ray photon is used, the light-emitting point of the photon in the phosphor layer is converted into visible light. The spontaneous light spot is divergent to the square of the incident photon. Here, since the phosphor layer is a pillar structure having a thickness of 3 to 10 μm, the luminescence photon of a certain ratio passes through the pillar by the difference between the refractive index of the slit between the pillars and the refractive index of CsI (the refractive index of CsI = 1.8). Come to the surface of the scintillator panel. About diverging to 161746.doc 201239898 The light farther than the adjacent pillar, the optical interface between the majority of the pillars is less likely to diverge to the surface of the phosphor layer, and if it reaches an interface, it is finally enclosed in the pillar. And come to the surface of the scintillator panel. Based on the above-described action, the phosphor layer of the pillar structure is not leaked by the light, and the light is transmitted to the subsequent device (for example, the TFT having the plurality of light-receiving surfaces including the photodiode in the FPD) Since the substrate is used, a scintillator layer having a relatively high resolution characteristic can be obtained. The ratio of the slit portion between the pillars can be changed by the film forming conditions of the phosphor layer, and the substrate temperature, pressure, vaporization speed, etc. can be changed by changing the parameters. The proportion of the pillar portion of the entire phosphor layer is divided into approximately from 7〇% to 1%. Further, the reflective film has a function of temporarily returning the light emitted in the direction of the support substrate to the surface of the phosphor layer to improve the sensitivity of the scintillator panel. After the film formation of the phosphor layer is completed, the moisture-proof film is further applied onto the support substrate, but the moisture-proof film intrudes into the slit portion of the phosphor layer of the above-described pillar structure to some extent. As the material of the moisture-proof film, an organic CVD film such as a polyparaphenylene resin is used. The organic CVD film has an advantage of being coatable at a substantially uniform film thickness along the uneven structure of the pillar structure. As an example of the FPD using the phosphor layer, the image sensor having a plurality of light receiving elements arranged in a one-dimensional or two-dimensional shape is attached to the scintillator panel. The resolution and sensitivity characteristics of the FPD thus constructed are affected by the characteristics of the scintillator panel. In other words, the above-mentioned CsI pillar structure and the reflection film function are related to the characteristics of the FPD (for example, Japanese Patent Laid-Open No. Hei 06-58〇99 (pages 4, 5, Fig. 3)) » 161746.doc 201239898 Previous flicker As described above, the panel is simpler than the vacuum deposition method and the CVD method, and has characteristics of both resolution characteristics and moisture resistance. However, if a scintillator panel having different manufacturing conditions is produced and a humidification test is performed, a difference can be seen in the moisture resistance characteristics. For example, comparing a scintillator panel having a filling rate of 79%, a phosphor layer having a film thickness of 350 μm, and a scintillator panel having a filling rate of 88% and a phosphor layer having a film thickness of 500 μm, '·' £ 60 C The value of image resolution (CTF: C0ntrast Transfer Functi〇n) at 3 Lp/mm at 80 〇-1 〇〇〇 hours is larger than 103% and 31% before humidification, respectively. difference. Originally, the moisture permeability of the organic moisture-proof film was generally (about several g/m2 per day), and the water vapor was not completely cut off. When the scintillator panel is placed in a humidified state, water vapor that has passed through the moisture-proof film is immersed in the phosphor layer, and the phosphor layer is swollen due to moisture. At this time, the pillars adjacent to the phosphor layer are combined and coarsened, resulting in a decrease in resolution characteristics. According to an embodiment of the scintillator panel, a phosphor layer including a plurality of columnar crystals and converting radiation into visible light, a substrate supporting the phosphor layer, and at least the phosphor layer and the substrate are coated In the scintillator panel of the organic moisture-proof film, the organic moisture-proof film fills the slits of the columnar crystals adjacent to each other and reaches the substrate. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. 161746.doc 201239898 (Structure of Scintillator Panel) Fig. 1 is a view showing the overall configuration of a scintillator panel according to an embodiment of the present invention. The scintillator panel 10 0 is provided with fluorescent light on the front surface of the CFRP (carbon fiber reinforced plastic) substrate 1 on which the PET (polyethylene terephthalate) sheet is adhered to the front and back surfaces to form the reflective films 2a and 2b. The bulk layer 3 further forms the organic moisture proof film 4 so as to cover the surface of the phosphor layer 3 and the side surface of the substrate stack. Further, the phosphor layer 3 contains a plurality of columnar crystals 5, and the organic moisture-proof film 4 invades the slits of the adjacent columnar crystals 5. The degree of intrusion can be evaluated by the organic moisture-proof film intrusion depth 11 and the coating residual depth 12. (Manufacturing Method of Scintillator Panel) Next, a method of manufacturing the scintillator panel 1 will be described. First, the CFRP substrate 1 on which the PET sheets were adhered on both sides of the front and back sides to form the reflection films 2a and 2b was washed. Then, the substrate 1 and the crucible containing the phosphor material are housed in a vacuum vapor deposition apparatus in a state of being opposed to each other, and the pressure in the apparatus, the temperature of the substrate i, the temperature of the substrate, and the like are adjusted to appropriate values. The vacuum evaporation is performed until the phosphor layer 3 adhering to the substrate 1 is in a desired state. Further, 'the substrate 1 forming the phosphor layer 3 is taken out from the vacuum evaporation apparatus and transferred to the CVD apparatus' and the radical dissociated gas generated by heating the dimer-p-quinone benzene raw material to 650 ° C is sent In the CVD apparatus, the organic moisture-proof film 4 is formed on the surface of the substrate 丄 and the phosphor layer 3 to form the scintillator panel 10. 161746.doc 201239898 (radiation detector) The above-described scintillator panel 10 is attached to an image sensor in which a plurality of photodiode light-receiving elements are arranged in a one-dimensional or two-dimensional manner on a glass substrate. Make a radiation detector. (Resolution characteristic) In order to study the resolution characteristics of the scintillator panel 10, a plurality of phosphor layers 3 shown in Fig. j are set to Csl: T1, and the filling ratio and film thickness of the phosphor layer 3 are made. A sample of change. That is, the step of preparing the phosphor layer 3 having a filling ratio of 86 to 90% (process a), the step of preparing the phosphor layer 3 having a filling ratio of 77 to 81% (process B), and the filling rate A three-step process of filling (71 to 75%) of the phosphor layer 3 (process C) was prepared, and samples having different filling rates were prepared. The filling rate of the phosphor layer 3 can be achieved by a substrate temperature (1 〇〇 to 250 ° C) and a pressure (10 _ 5 〜 1 Pa) when the csi phosphor layer is formed on the substrate by vacuum evaporation. The film speed (1 to 50 μm/min), the substrate rotation speed (1 to 20 rpm), and the shape and size of the structure in the other device are selected as appropriate values, and are set to desired values. Specifically, in the process A, the substrate temperature 200 is set. (:, pressure 0.4 Pa, film formation speed 1 μηι/min' in process b, substrate temperature i6〇°c, pressure 1〇3 Pa, film formation speed 1 μηι/min, in process c, substrate temperature 140 C , pressure 1 〇 _3 Pa, film formation speed 2 μηι / min. The substrate rotation speed is set to 10 rpm. Also, in the process B, C, the position of the crucible is farther away than the process A. In the film thickness of the phosphor layer 3, three types of 200, 350, and 500 μm 161746.doc 201239898 are prepared. Fig. 2 shows a sample of seven types of film thickness and filling rate with respect to the phosphor layer 3, which is continuously humidified. The change in resolution (CTF) characteristics up to 6 〇t · 80% -10 0 0. Here, as the resolution characteristic, the CTF value at 3 Lp/mm is displayed. The resolution of the sample with a film thickness of 500 μm is significantly reduced, and the resolution of the sample of the process Β_film thickness 5〇〇μηΐ2 is also seen. Figure 3 shows the resolution after 1 hour ( The residual rate of CTF). According to the results of Fig. 3, if the same film thickness is 50 〇μπι, the filling rate is obtained. The lower the residual rate is, the more the resolution is reduced in the sample with a film thickness of 500 μm in the same process (7) and C) ', and the resolution of the sample of 3 50 μm is hardly reduced. In order to find a rule for summarizing these phenomena, the fracture surface of the completed phosphor layer is observed. As a result, as shown in Fig. 1, it was found that the depth of invasion of the slit of the columnar crystal 5 in which the organic moisture-proof film 4 invaded the phosphor layer 3 was different depending on the sample. That is, it is known that the intrusion depth u of the process A (fill rate 88%) is about 200 μm, the process B (filling rate 79%) is about 350 μm, and the process c (filling rate 73%) is about 500 μπι » As shown in Fig. 4, if the curve is drawn by plotting the data on the graph in a quadratic manner, it is: (intrusion depth (μπι)) = 0·5556χ (filling rate (%)) 2_1〇9 44χ (filling Rate) + 5528.9...... (Formula 1). In addition, when the depth of penetration 11 is observed, when the fracture surface of the phosphor layer 3 is observed by SEM (scanning electron microscope), when the film of the phosphor layer 3 is cracked in the thickness direction, it is organically placed on both sides. The moisture-proof film 4 is stretched together with both sides to produce: the presence or absence of the chord-like residue, and the surface side of the phosphor layer 3 is determined to be in the depth direction, and the residue of the string shape is determined to disappear. The depth of the point is the intrusion depth U. When the film thickness of the phosphor layer 3 is larger than the intrusion depth u, the coating residual depth 12 is applied at a coating residual depth of 12 (film thickness (four) of the phosphor layer 3) (invasion depth 11 (μιη)). Fig. 5 is a graph showing the plot resolution (CTF) residual rate with respect to the coating residual depth 12. From the results shown in Fig. 5, it is known that if the coating residual depth 12 exceeds 〇, a decrease in CTF is caused, and if it is G or less, the decrease in CTF does not occur. In the case where the pillar structure is changed to the right, it is considered that the portion of the pillar coated with the organic wet film 4 is swollen by the pillars, and the organic moisture proof membrane 4 coated in the pillar shape is still used. The shape before the humidification is maintained. On the other hand, the portion of the pillar is not coated with the organic moisture-proof film 4, and since there is no barrier portion between the adjacent pillars, the anti-composite is coarsened in sequence, and the resolution of the phosphor layer is caused. reduce. According to the above findings, (the film thickness τ (μηι) of the phosphor layer (4) invaded the depth Η-)) (Formula 2) is a phosphor & Formula i is substituted into Formula 2, (film thickness t of the camping layer) $Q5556x (filling rate D) 2_lG9 44χ (filling rate ϋ) + 5528·9..." (Formula 3) ' Fluorescence excellent in moisture resistance Body layer 3. Here, the film thickness of the phosphor layer is 161746.doc 201239898 Τ(μΐΉ) 'filling rate D (°/.), and the depth of invasion is Η(μπι). Specifically, relative to the phosphor layer 3 The film thickness is 2 〇〇μηΐ2 scintillator panel 10' It is desirable to set the filling ratio of the phosphor layer 3 to 88% or less, and it is desirable to set the filling rate of the phosphor layer 3 with respect to the scintillator panel 1 having a film thickness of 350 μm. It is 79% or less. Further, with respect to the scintillator panel 1 膜 having a film thickness of 5 μm, it is desirable to set the filling ratio to 73% or less. In addition, by making the thickness of the phosphor layer 3 less than 500 μm, The range of the filling rate for which the resolution characteristic is not lowered is selected widely. (Effect of the present embodiment) As described above, by focusing on the residual depth 12, it is found that The number is different from that of the scintillator panel which is easy to decrease with respect to the humidification test and the resolution characteristic, and it is found that the condition of the desired phosphor layer can be obtained by one formula (Formula 3). The coating residual depth 12 is 〇, and the organic moisture-proof film 4 fills the slits of the columnar crystals 5 to reach the substrate 丨, and even if the columnar crystal 5 is swollen by humidification, the organic moisture-proof film 4 can be kept. The shape of the wet front. Therefore, it is possible to provide a scintillator panel that does not deteriorate the resolution characteristics even under humidification of 6 (rc _8 〇 1 〇〇〇 1 hr, and a radiation detector using the scintillator panel) (Other Embodiments) As the substrate 1, not only the CFRp substrate shown in the above embodiment but also amorphous carbon, graphite, glass, tantalum, titanium, aluminum, and the like, ceramics (aluminum oxide, tantalum oxide) may be selected.鍅 鍅 鍅 矽 工程 工程 工程 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 萤 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 161 Radiation As the image sensor, a plurality of photodiode light-receiving elements are arranged on the glass substrate in one-dimensional or two-dimensional form, and CCD, CMOS, etc. can also be used. [Simplified Schematic] FIG. A cross-sectional view showing the structure of a scintillator panel according to an embodiment of the present invention. Fig. 2 shows a case where the film thickness and the filling ratio of the phosphor layer are changed, and humidification is continued until 60. (: -80% -1 A graph showing the change in resolution (CTF) characteristics at the hour of aging. Fig. 3 shows the residual rate of the resolution (CTF) after 加 hours of humidification after changing the film thickness and filling rate of the illuminating layer. table. Fig. 4 is a graph showing the relationship between the filling ratio of the working layer and the depth of penetration of the organic moisture-proof film. Figure 5 is a graph showing the stock rate. Coating residual depth and CTF residue based on _hour humidification [Major component symbol description] 1 Substrate 2a Reflective film 2b Reflective film 3 Phosphor layer 4 Organic moisture proof film 5 Columnar crystal 10 Scintillator panel 161746.doc 201239898 11 12 Organic moisture-proof film intrusion deep coating residual depth 161746.doc •12·