TW201234075A - A correction method of degradation for display device under long-term illumination - Google Patents

Abstract

The present invention provides a correction method of degradation for display device under long-term illumination, comprising: receiving an environment light and back light from a display device under the illumination time by a photosensitive element to obtain a first photo-current value; receiving the environment light from the display device when the back light of the display device is turned off to obtain a second photo-current value; comparing the first photo-current value and the second photo-current value to obtain a reference value, R; and mapping the reference value, R to the diagram of the reference value (R) and the intensity of environment light to obtain the accurate intensity of the environment light under the illumination time.

Description

201234075 VI. Description of the Invention: [Technical Field of the Invention] The present invention proposes an liquid crystal display, a special gap type amorphous slab thin film transistor as a liquid crystal of a photo sensing element: by ___晶晶夕膜电The crystal is corrected in the long = photocurrent decay phenomenon. @ [Prior Art] panel image sensors) is the use of electromagnetic radiation that is frequently used to detect visible light (visiMe light spectrum) and near visible light (near visiMe). The planar image sensing element can form a planar display by depositing and patterning a metal layer, an insulating layer, and a semiconductor layer on the glass substrate. Such sensing elements are typically used as photosensitive elements, such as amorphous silicon (a-Si) PIN diodes. The photosensitive element is coupled to a readout switch, such as a thin film transistor (TFT), for providing data for receiving the light source. For planar image sensing components, it is commonly used to detect X-rays in medical and industrial applications. The image sensing element includes a phosphorescent screen overlying the array of image sensing elements. This fluorescent screen converts the received X-ray into visible light. The image sensing element array receives the visible light and generates a photocurrent corresponding to the visible light. The current is measured. Need to use the number of times of the mask - f ray crystal. The mask process, and the multiple mask process will be reduced twice. In the plane wire 4_ towel complex = and its polar body is not Standard components, so cut and add (four) ^ two use standard process financial axis _ _ _ yuan mouth this,

In the application of flat panel display, the film transistor is made to be t mesh. „. Thin-film transistors are generally used in active array liquid crystals: show ^ Wtlve-matnx llQuld crystal dispiay, view c two mother and one 溥 film transistor function system as a matrix in the array display (matriX dlSplay) ( (PixeD The switch is separately clamped and, under the brightness ratio, the voltage is passed through each pixel. The thin film capacitor can be deposited and patterned by the metal layer, the insulating layer and the semiconductor layer on the substrate. Known semiconductor process technology ^ ^ ^ ^. Thin film transistor usually uses amorphous germanium (a_Si), more 5 = (polycrystal 1 ine si 1 icon) or stone Western recording (CdSe) thin film half V body material. It is generally used in flat-panel displays, so it is easy to deposit amorphous germanium on large-area glass substrates at temperatures below 35 (rc). Thin-film transistors are more economical than amorphous germanium pIN diodes. Benefits, and can be fully applied to flat-panel displays. If the image measuring component is combined with the readout switch of the image sensing array, and as a thin-film electric body, only a small mask is needed in the process of the process, and the system can be used. Greatly reduced. Wang 5201234075

In addition, on the TFT LCD panel, the conventional amorphous thin-crystal (amorphous-Si:H TFT)' is shown in Fig. 1, and is too functioning as a switch for controlling the liquid crystal voltage, and these films are ,: The current characteristic 'will be'; under the light intensity of the same ambient light: change, ^ 2 _. (4) It is known from Fig. 2 that the county has a high-sensitivity 只有 只有 作 作 作 关 _ 漏 漏 漏 漏 , , , , , _ _ _ _ _ _ _ _ _ _ _ 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流 电流i: Η ΤΠ Operation in the off state to sense ambient light. However, because the leakage current signal that is operating in the off state is too small, additional circuits must be added to amplify. If such a signal amplifying circuit is to be placed in a pixel circuit, the array 'will occupy more than the display area of the afternoon'. The display aperture ratio drops. In order to solve the above problems, a gate-gap amorphous-type (Si-H TFT) film having the same process as the conventional amorphous-Si:H TFT has been proposed, and this structure can be present at present. The panel factory is made without changing the process. More importantly, this non-traditional structure still has the function of sensing light when it is operated in the open state, as shown in Figure 3, so no extra is needed. By adding an amplifying circuit, the signal can be read by the reading circuit. However, for a long time, the operation of the amorphous germanium thin film transistor in the open state will face the problem that the sensing current will decrease with the illumination time, and the more serious the conductivity declines, that is, Staebler-Wronski (SW) Effect, this phenomenon will seriously affect the accuracy of the light sensing component under long-term use. Another serious problem is that when such a light sensing component is placed in a flat panel display, the light sense 6 201234075 (bj t; to the backlight from the display itself contains I Unit) is the first line 'measures the measurement component As a result, the influence of the backlight of the display device and the ambient light produced by the desired measurement [invention] can be known, and the light sensing component in the flat display is in addition to the light source of the light. 'At the same time _ to the source source 2, the use of the module (baCkHght ―) provided by the back of the surgery 2 fine ambient light produces errors, so = Shi Xixin The main purpose of the invention is to gate gap type Non-type 1 non-^ Ρ^6 class fine I^ ΤΠ) replaces the transmission, self-generating 曰矽 曰矽 曰矽 曰矽 电 电 电 , , , 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 非晶 非晶 非晶The high photocurrent value.

The sundial is to use the gate gap amorphous (four) film electricity ^ 乍 as the light sensing device 'to replace the original photo current (6) for the round-trip method ~ using the parameter value R (R = lD (FUBLiixed) As the basis for judging the sensing value, the optical signal value is obtained by corresponding to a parameter R and the illumination time, and the ambient light intensity at the illumination time can be known by the optical signal value. Another object of the present invention is to use the parameter value r(r = Id(fl + bl fixed ) / KFL only) as the basis for the j-break sensing value according to the correction method of the present invention, no matter how long Under the illumination time, there is the same trend for ambient light intensity.

S 7 201234075 Numerical reference intensity. The strength of the force is added to the environment at the time. The purpose of the invention is that any parameter value (8) of the display can be used to correct the amorphous thin silicon 4 = = under the illumination, the transistor channel current is reduced so that: sense

The purpose of the present invention is to provide a display that is first and foremost, and that includes: during the illumination time, the optical element receives the ambient light and the backlight source to obtain the L current. 2 (, light (FL) + f light source (BL one); turning off the display is such that the moonlight source causes the light sensing element to receive a second current value Μ ambient light (FL_)); comparing the first current The value corresponds to the ambient voltage intensity at the time of the illuminating time of the second electric power corresponding to the lD (FL + BLfixed) / value - the money value and the ambient light intensity. [Embodiment] For a more complete and clear disclosure of the technical content, the object of the invention, and the effect of the invention, the present invention will be described in detail below, and the drawings and drawings are disclosed. Figure 3 is a diagram showing the use of a gate 1 austenitic amorphous thin film transistor as a light sensing element, under different illuminations, and a drain current and a gate voltage (gate v) according to the disclosed technology. 〇ltage) = line relationship diagram. In this embodiment, when the gate-transistor-type amorphous germanium thin germanium transistor is used as the light sensing element, it can be obtained that although illumination is performed under different light intensity of 201234075, it can be obtained in whatever Under the strong sound, the ratio of the polar current to the voltage of the amorphous (four) film transistor between the gates is a fixed value, and is not affected by the backlight source. Next, the present invention is based on the principle 0 of the foregoing FIG. 3, and proposes a method for correcting the light intensity of H and its remedy, the first cut reference to FIG. 4, which is a simple schematic diagram of the display structure according to the present invention. . In the fourth embodiment, the display panel 1 is provided with at least a backlight module 12 and a display panel (iSpiay panei) i4, wherein the display panel 14 is disposed on the backlight module 12. In another embodiment, a touch panel (not shown) is further disposed on the display panel 14 to form a touch display (not shown). In addition, as shown in FIG. 5, the display panel 14 further includes a thin film transistor array substrate 142, a liquid crystal layer (liquid crys1; al laye 144 and a color filter substrate (col filter; r filter substrate) 146' The liquid crystal layer 144 is disposed between the thin film transistor array substrate 142 and the color filter substrate 144. The thin film transistor array substrate 142 has a plurality of light sensing elements (1422) and at least one storage capacitor ( St〇rage capacitor) (1424) and a plurality of pixel electrodes (1426). In addition, the light sensing component disclosed in the present invention is a gate gap type amorphous germanium thin film transistor. (gap-gate amorphous-Si thin film transistor) 1422 j The process steps of forming the thin film transistor array substrate 142 are the same as those of the conventional amorphous germanium thin film transistor as the light sensing element, and therefore are not described herein. The following is based on the use of gate gap type in accordance with the present invention.

S 9 201234075 Crystalline crystal is used as a light-sensitive gap-type amorphous austenitic film to explain how to use the correction method of the light intensity of the interpolar light. - for a longer illumination time, for the environment to display the book test circuit in the display 10, and using the gate gap type Ί曰 thousand '-4 parts or all of the photosensitive elements in the light sensing circuit', Q film Transistor 1426 as a very gap type amorphous (tetra) film transistor

With the panel scan line (scanning Η gate (not shown in the figure) and gate gap type amorphous 矽 town: e) (not shown in the figure) link, (one with the photosensitive circuit On-line electricity 2: 2 in Figure 6, it is obvious that when y' ambient light, the electric 曰 31 is right when the transistor is irradiated to different "operations in the open state, we can gamma: = = 1111 itself backlight mode Group Μ: Flowing) 'Adding two light sources to be the first-electrical addition' In order to solve the above problem, the present invention also proposes a gate gap type of the same process as the conventional rph〇US-S 1:H TFT. Amorphous; g-membrane transistor (gap-gate amorph〇us_Si: H TFT), this structure can be produced by today's panel manufacturers without changing the process, and more importantly, this non-traditional structure is operating in the open state. When it is down, it still has the function of sensing light. As shown in the above figure 3, it is possible to read the signal by the reading circuit without adding additional 201234075 plus the amplifying circuit. The gate gap type amorphous germanium thin film transistor has a phenomenon that the drain current decreases. As shown in Fig. 7. In addition, 'in the display 10, in order to eliminate the motion blur', the backlight module 12 of the display 1 will be turned off at a very short instant, and only the display 1〇 The ambient light in front exists, and the light sensing element 1426 in the display panel can detect the second current value ID (F1 only) of only ambient light. Then, the first current value ID (FL+BLf ixed) Obtained by dividing the second current value ID (FL 〇nly)

The ratio is defined as the parameter value R. This ratio R is almost identical for both light intensity sensing trends at any illumination time, as shown in Figure 8. ® This user can pre-produce the parameter value (R) and the intensity of the light, the relationship diagram _ get the current w at a known time or at a different time, corresponding to the curve diagram of Figure 7, ie I can know the light intensity of Wei Guang at that time. There are several advantages to be corrected: as the judgment of the sensing two SmLfixed) / iD (FL〇niy)) on the length of the area; in addition, by this correction method is not appropriate. The lower amorphous optical (four) film transistor, which has the same generalization for ambient light intensity, replaces the parameter value after the transmission of the conductive property is not long after illumination. Therefore, no matter when it is measured, it can correspond to a light intensity, so as to obtain the ambient light intensity when 201234075. Furthermore, any parameter value (R) obtained by the backlight source of the display can be used to correct the photosensitive error caused by the decrease of the transistor channel current under the long-time illumination of the amorphous germanium film transistor. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included. Within the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a conventional amorphous germanium thin film transistor according to a conventional technique; ^Fig. 2 shows a conventional amorphous tantalum film turtle body according to a conventional technique. Diagram of the relationship between the drain currenf and the gate voltage (gate VQltage) under different illumination intensities; FIG. 3 is a diagram showing the use of the gate-type amorphous sand film in the gate according to the technology disclosed in the present invention. a crystal as a light sensing device, a relationship between a drain current and a gate voltage under different illumination intensities; and a fourth diagram showing a simple schematic diagram of the display according to the technology disclosed in the present invention; The figure 5 shows a schematic diagram of a plurality of n?, storage capacitors and a plurality of photo sensing elements disposed on a display board on a display board according to the technology disclosed in the present invention; The invention discloses a technique for using a gate

S 201234075 石石式非(四)_O crystal is used as a light sensing element to detect a schematic diagram when irradiated at different light intensities; Figure 7 is a technique according to the present invention, which shows that the use of interrogation a crystal (four) film transistor as a light sensing element, a relationship between a dra in current and an illumination intensity after long-time illumination; and a figure 8 showing a different illumination according to the technique disclosed by the present invention At time, its corresponding curve for different light intensities.

[Main component symbol description] 10 display 12 backlight module 14 display panel 142 thin film transistor array substrate 144 liquid crystal layer 146 color filter substrate 1422 between the gap gap type amorphous germanium film H24 storage shirt ΒΗ ^ 1426 halogen electrode 30 ambient light

Claims (1)

201234075 VII. Patent application scope: 1. A method for correcting light intensity of a display, comprising: at least one light sensing component receiving ambient light of a display and a backlight source to obtain a first current value; Turning off the backlight source of the display such that the light sensing component receives a second current value; comparing the first current value with the second current value to obtain a value; and A line graph corresponding to an ambient light intensity is obtained according to the parameter value to obtain the ambient light intensity at the illumination time. 2. The calibration method of claim 4, wherein the light sensing element is a gate gap type amorphous germanium film transistor. 3. ^Apply to the correction method described in the special fiber (4) item, wherein the display is read from: a group consisting of a liquid crystal display and a touch-sensitive liquid crystal display. • t: May's correction method described in item 1 of the range </ RTI> where the source intensity of the backlight source is a fixed value. The method for correcting the display north, wherein the display comprises a display surface; ^ = for providing a "backlight source" - a display panel, the display transistor film array substrate is disposed in the backlight mode; The surface has a plurality of halogen electrodes, two, a storage capacitor and a plurality of light sensing elements' liquid crystal layer, and the thin film transistor array base is disposed on the liquid crystal layer, and the correction method comprises a color μ The light-sensing element receives the display 14 201234075 « an ambient light and the backlight source to obtain a first current value; turning off the backlight source of the display causes the light-sensing elements Receiving a second current value; comparing the first current value with the second current value to obtain a parameter value; and corresponding to a parameter value and an ambient light intensity according to the parameter value to obtain the illumination time The ambient light intensity below. 6. The method of claim 5, wherein the photo sensing element is a gate gap type amorphous germanium film transistor. 7. The calibration method of claim 5, wherein the display is a liquid crystal display. 8. The method of claim 5, wherein the color filter and the optical panel further comprise a touch panel. 9. The method of claim 5, wherein the source of the backlight source has a fixed value. S 15