TW201233784A - Texture etching solution composition and texture etching method of crystalline silicon wafers - Google Patents

Abstract

Disclosed are a texture etching solution composition for a crystalline silicon wafer and a texture etching method and, more particularly, a composition which includes an alkaline compound; a cyclic compound; at least one surfactant selected from a group consisting of a polyoxyethylene (POE) compound, a polyoxypropylene (POP) compound and copolymers thereof; and water. According to the texture etching solution composition for a crystalline silicon wafer and the texture etching method of the present invention, it is possible to minimize a deviation in texture quality of the surface of a crystalline silicon wafer to improve uniformity of a texture structure, thus maximizing an absorbed amount of solar light while decreasing light reflectivity and finally enhancing luminous efficacy. Moreover, an amount used may be considerably decreased to increase the number of sheets to be treated and, since an alternative etching solution component is not needed to be introduced during texturing, productivity may be improved while attaining economical advantage in terms of costs.

Description

201233784 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] [0001] This application claims to be from Korean Patent Application No. 10-2010-01 39987, filed on December 31, 2001 by the Korea Intellectual Property Office. The priority of the application number 1〇-2〇1〇_〇139988 filed on December 31, 2010 and the application number 10_2〇11-〇142671 applied for on December 26, 2011, all of which are disclosed The content is incorporated herein by reference. The present invention relates to a texture etching solution composition for a crystalline germanium wafer, which is capable of minimizing texture quality deviation in the region on the surface of the crystallized wafer and improving light absorption efficiency, and crystallization using the foregoing composition Texture etching method for germanium wafers. [Prior Art] [0002] In recent years, solar cells have rapidly spread and are well known as energy sources for the next generation, and are an electronic device that directly converts clean energy, that is, sunlight, into electric power. Such a solar cell has in principle a P-type germanium semiconductor comprising germanium and boron added thereto, and comprises a "junction semiconductor substrate, which in principle comprises germanium and boron added to it, and Phosphorus (p) diffuses into the surface of the p-type dream semiconductor to form an N-type Si Xi semiconductor layer. 10014888# Single number Α0]01 When light, such as sunlight, illuminates a substrate provided by an electric field, the semiconductor Electrons (-) and holes (+) are excited, and such excited electrons (-) and holes (+) are freely and randomly moved within the semiconductor. In this example, the pN junction is formed. Electrons (1) in the electric field can be moved to the N-type semiconductor, and the hole (+) is moved to the ?-type semiconductor. If electrodes are provided on the surface of the P-type semiconductor and the type-type semiconductor, The electrons flow toward the external circuit and generate a current. Base m λι φ Page 4 of 35 I013I55033-0 201233784 In this principle, sunlight is converted into electrical energy. Therefore, in order to improve the efficiency of solar conversion, PN should be increased as much as possible. Joint semi-guide The electrical output per unit area of the substrate, for this purpose, the reflectivity must be reduced while maximizing the light absorbance. Considering the foregoing, the germanium wafer of the solar cell constructing the PN junction semiconductor substrate should have a microscopic surface formed on the surface thereof. The pyramid structure' can be provided with an anti-reflection film. The surface of the germanium wafer that has formed the texture of the micro-pyramid structure can reduce the reflectivity of the incident light having a wide range of wavelengths, thereby increasing the amount of light absorbed. Therefore, the solar cell can be enhanced. Efficacy, that is, the efficiency of a solar cell. A method of forming a surface of a stone wafer into a micro-pyramid structure has been disclosed. For example, U.S. Patent No. 4,137,123 describes a ruthenium texture engraving solution, wherein 0.5 to 10 wt. % of Shi Xi is dissolved in an anisotropic etching (usually "dry etching") solution containing 〇 to 75 vol. % of ethylene glycol, 〇· 〇 5 to 50 wt.% of potassium hydroxide and residual water. in. However, this kind of surname solution leads to the failure of pyramid formation, thus increasing light reflectivity and causing a decrease in light absorption efficiency. Furthermore, European Patent No. 0477424 proposes a texture etching method which feeds oxygen to a texture etching solution containing a dream dissolved in a mixture of ethylene glycol, potassium hydroxide and the remaining water, that is, , perform the aeration process for a few minutes. However, the above etching method causes failure of pyramid formation, which in turn increases light reflectivity while reducing light absorption efficiency, and, in addition, has the disadvantages of a further alternative aerator. 1013155033-0 In addition, Korean Patent Registration No. 0180621 discloses a mixture comprising 5 to 5% potassium hydroxide solution, 3 to 20 vol. % isopropanol, and 75 to 0.5 vol. % deionized water. Texture etching solution; US 10014888# Single number A 〇 101 $ 5 pages / Total 35 pages 201233784 National Patent No. 6, 451, 218 discloses a texture etching comprising a basic compound, isopropyl alcohol, an aqueous solution of alkaline glycol, and water. Solution. However, since each of the foregoing etching solutions includes isopropyl alcohol having a relatively low boiling point and this material must be additionally introduced during texturing, economical disadvantages in terms of productivity and cost may occur. In addition, the additional introduction of isopropanol results in a temperature gradient of the etching solution, thus increasing the texture quality deviation in the area of the wafer surface and ultimately reducing uniformity. SUMMARY OF THE INVENTION [0003] It is therefore an object of the present invention to provide a texture etching solution composition for a crystalline germanium wafer that can be minimized when a micropyramid structure is provided on the surface of the crystalline germanium wafer as described above. The texture quality deviation in the area on the surface, thus improving the light absorption efficiency. Another object of the present invention is to provide a texture-etching solution composition for a crystalline germanium wafer without the need to apply an aeration process and to introduce additional etching solution components during texturing. Further, another object of the present invention is to provide a texture etching solution composition in which the amount of the composition used is remarkably reduced as compared with the conventional texture etching solution composition, thereby increasing the amount of the composition to be treated. The number of wafers. Furthermore, it is still another object of the present invention to provide a texture etching method using a texture etching solution for the foregoing tantalum wafer. In order to achieve the above object, the present invention provides the following. Π) A texture etching solution composition for crystallizing a germanium wafer, comprising: 1 to 20 wt.% of a basic compound; 0.00001 to 1 Wt. % of at least one surfactant, the surfactant A group selected from the group consisting of polyoxyethylene (POE) compounds, polyoxypropylene (POP) compounds, and copolymers thereof, 1013155033-0 10014888#single number A01Q1, page 6 / total 35 pages 201233784; and water as the remainder. (2) The composition according to the above item (1), which further comprises 0.1 to 50 wt.% of a cyclic compound. (3) The composition according to the above item (2), which has a boiling point of 100 ° C or higher. (4) The composition according to the above item (1), wherein the basic compound is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, and tetrahydrofurfuryl ammonium. At least it in the group is ^^. (5) The composition according to the above item (a), wherein the surfactant is at least one selected from the group consisting of polyoxyethylene glycol, polyoxyethylene glycol A bond, polyoxyethylene mono-propyl hydrazine, polyoxyethylene neopentyl _, polyethylene glycol mono (triphenylethylene phenyl) test, polyoxyethylene 10 /, burnt hydrazine, polyoxyethylene The laurel, the polyoxyethylene thinner, the polyoxyethylene stearyl sulfhydryl, the polyoxyethylene tridecyl _, the polyoxyethylene sulfhydryl group, the polyoxyethylene octyl domain, the polyoxyethylene Double expectation, polyoxyethylene, glycerin oxime, polyoxyethylene fluorenyl phenyl group, polyoxyethylene ketone ketone, polyoxyethylene benzene fine, polyoxyethylene octyl phenyl fluorene, polyoxyethylene _, provided It has 6 lions, a base, a ring, a hexyl group, a polyoxyethylene, a naphthyl group, a polyoxyethylene drug, a polyoxyethylene hydrogenated coffee, a polyoxyethylene garamine, and a polyoxyethylene sulfonate. Vinegar, 2 埽 oil, · polyoxyethylene followed by amine, polyoxyethylene hard wax polyoxyethylene fatty amine; polypropylene glycol; polyoxygen (tetra) _ polyoxypropylene: polyoxyethylene - polyoxypropylene thiol _ Polymer, polyoxyethylene ethoxylate H polyoxyethylene Oxygen-propylene material four-recorded polymer, t-oxyethylene-polyoxy-2-indole-based base slab number A_ Page 7 of 35 Poly 201233784 Oxypropylene propylene lauryl ether copolymer, polyoxyethylene-polyoxypropylene A stearyl sulfonate copolymer, a glycerin addition polyoxyethylene-polyoxypropylene copolymer, an ethylenediamine addition polyoxyethylene-polyoxypropylene copolymer. (6) The composition according to the above item (2), wherein the cyclic compound is at least one selected from the group consisting of: piperazine, N-methyl, N-B Baseline, ethyl brace, n-(2-aminoethyl)oxazine, hydrazine, Ν'-dimethyl benzylazine, morphine, N-methylmorpholine, n-ethyl , Ν-phenyl 啦, ν-cocoyl-Merlin, Ν-(2-aminoethyl)morpholine Ν-(2-cyanoethyl)morpholine, Ν-(2-hydroxyl Ethyl)morpholine, Ν-(2-propyl) morphine, Ν-ethyl hydrazinyl, Ν-methyl hydrazino, Ν-methyl-methyl-lin-oxide-methyl Biting, Μ-methyl brigade, bite, 3, 5-dimercaptopiperidine, oxime-ethyl piperidine, Ν-(2-hydroxyethyl) piperidine, Ν-methyl-4-ketone, Ν-Ethyl-2-Big bite_, Ν-曱 base" Bilo bite, Ν-mercaptopyrrolidone, Ν-ethyl-2-pyrrolidone, Ν-isopropyl-2-pyrrolidone, Ν-butyl -2-pyrrolidone, Ν-tert-butyl-2-pyrrolidone, Ν-hexyl-2-pyrrolidone, fluorenyl-octyl-2-pyrazine, Ν-knot-2-° Alkanone, Ν-cyclohexyl-2-pyrrolidone, Ν-vinyl-2-pyrrolidone, Ν-(2-hydroxyethyl) -2-pyrrolidone, Ν-(2-methoxyethyl)-2-pyrrolidone, Ν-(2-methoxypropyl)-2-pyrrolidine, I, Ν-(2-ethoxyl Ethyl)-2-pyrrolidone, fluorenyl-indolyl idazole ketone, dimethylimidazolidinone, N-(2-hydroxyethyl)-ethylene urea, tetrahydrofuran, tetrahydrofurfuryl alcohol, N-mercaptoaniline, N, N-dimethylaniline, N-(2-hydroxyethyl)aniline, N,N-bis-(2-hydroxyethyl)aniline, ethyl_N_(2-transethylethyl) phenantamine, N, N-diethyl o-methylamine, N-ethyl_N_(2_ethyl) m-anisidine, dimethylbenzylamine, butyrolactone, tolyltriazole, 1,2,3-benzene Triazole, 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2, 4- 1013155033-0 Page 8 of 35 201233784 Triazole, 4-amino-4H-1,2,4-triazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-mercaptobenzotriazole, 5-mercapto Triazole, benzotriazole-5-bicarbonate, nitrobenzotriazole and 2-(2H-benzotriazol-2-yl)-4,6-di-tert-butylphenol . The composition according to the above item (1), further comprising from 0.00001 to 1 wt.% of at least a fluorosurfactant selected from the group consisting of perfluoroalkyl carboxylates , perfluoroalkyl acid salt, perfluoroalkyl sulfate, perfluoroalkyl phosphate, perfluoroalkylamine salt, perfluoroalkane quaternary ammonium salt, perfluoroalkylcarboxybetaine, perfluoroalkane A group consisting of a base sulfonic acid betaine, a fluoroalkylpolyoxyethylene, and a perfluoroalkylpolyoxyethylene, each of which has a monoalkyl group having from 1 to 3 carbon atoms. (8) According to the composition of the above item (1), the composition further comprises at least one compound containing a cerium oxide, and the compound containing cerium oxide is selected from the group consisting of fine cerium oxide Powder; Naxi sol solution stabilized by Na 2 ;; ruthenium sol solution stabilized by Κ2〇; Shixi sol solution stabilized by acidic solution; sol sol solution stabilized by Nlis

Q; a cerium sol solution stabilized with at least one organic solvent selected from the group consisting of ethanol, propanol, ethylene glycol, mercaptoethyl ketone, and methyl isobutyl ketone; liquid tannic acid Nano; liquid hydrazine unloading; and liquid lithium niobate. (9) A method of etching a crystallization of a cerium wafer, comprising immersing the crystallization wafer in a texture etching solution composition according to any one of claims 1 to 8, spraying the composition The crystallization wafer is immersed in the composition while the composition is being sprayed. (10) According to the method described in the above item (9), execute 1〇〇14888#单号A0101 Page 9/35 pages^13155033-0 201233784 Immersion, spraying or at 5〇 to i〇〇°c Immerse and spray for 30 seconds to 6 minutes. The texture surname solution composition for crystallizing the lithographic wafer according to the present invention minimizes the texture quality deviation in the region on the surface of the crystallization wafer, that is, improves the uniformity of the texture, thereby maximizing the absorption of sunlight. To the extent, and to reduce light reflectivity, which thus enhances light absorption efficiency. In addition, since it is not necessary to introduce any alternative etching solution components during texturing, productivity is improved and economic advantages in terms of cost can be achieved. Further, in the case of including a cyclic compound having a high boiling point, the number of (wafer) sheets to be processed can be greatly increased as compared with the existing texture surname solution composition. In addition, productivity and cost advantages are achieved because no additional etching solution components need to be introduced during text formation. Furthermore, the texture etching method according to the present invention does not require the introduction of an alternative aeration device, and is therefore economical in terms of initial production and processing costs. In addition, a uniform micro-pyramid structure can be successfully embodied. [Embodiment] The present invention provides a texture etching solution composition for a crystalline germanium wafer, and a texture etching method for a crystalline germanium wafer using a texture etching solution composition. In the following, the following description will be given to specifically explain the present invention. The texture button solution composition for crystallizing a silicon wafer according to the present invention may comprise: a basic compound; a compound selected from the group consisting of polyoxyethylene (p〇E;) compounds, polyoxypropylene (POP) compounds, and copolymers thereof. At least one surfactant in the group; and water. 1013155033-0 More specifically, 'the composition preferably includes 〇·1 to 2〇wt. % of alkaline 10014888#军号A0101 Page 10 of 35 201233784 Compound, 〇.〇〇_ to i wt % At least a surfactant selected from the group consisting of polyoxyethylene (p〇E) compounds, polyoxypropylene (10)) compounds, and copolymers thereof, with a minimum of water. In addition to at least one surfactant and water selected from the group consisting of a test compound, a polyoxyethylene (PGE) compound, a polyoxypropylene (POP) compound, and a copolymer thereof, The texture etching solution composition of the wafer may further include a cyclic compound. More particularly, the composition preferably comprises from about 0.1% to about 50% by weight of the basic compound; from 0.1 to 50% by weight of the cyclic compound; 〇oooooiii wt.% is selected from the group consisting of polyoxyethylene (Poe) compounds, At least one surfactant in the group consisting of a polyoxygen compound and a copolymer thereof; and the remainder being water. The composition of the test compound 疋 结晶 结晶 结晶 结晶 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 《 Etc., used alone or in combination of two or more thereof. The test compound may be included in an amount of 0.1 to 20 wt.% with respect to a total of 100 wt% of the texture etching solution compound for crystallizing the germanium wafer. Preferably, from 1 to 5 wt.% of the basic compound is used. When the content of the compound is within the foregoing range, etching of the surface of the tantalum wafer can be performed. The cyclic compound means a compound comprising: a cyclic hydrocarbon having 4 to 1 carbon atoms; and/or a heterocyclic hydrocarbon having 4 to 10 carbon atoms, which contains a compound selected from N, 0 Or at least one hetero atom of S. The compound improves the wettability of the surface of the crystalline germanium wafer to prevent overetching caused by the alkaline compound, thereby minimizing the deviation of the texture quality, and rapidly reducing the amount of hydrogen bubbles with 1013155033-0, which is followed by Prevention of the occurrence of bubble chambers 1〇〇14888 production order number A0101 page 11 / total 35 pages 201233784. Also, due to the high boiling point, the compound can be used in a relatively small amount compared to the conventionally used isopropyl alcohol, and the number of sheets treated with the same amount of the compound can be increased. The cyclic compound may have a high boiling point of 100 ° C or higher, more preferably a boiling point in the range of 15 ° to 400 ° C. If the cyclic compound has a boiling point of 100 ° C or higher, the kind of the cyclic compound is not It is particularly limited, but can include 嘻, 琳琳, bite, brigade, brittle ketone, η 洛洛 bite, D 洛洛, 嗤 _, 咬, aniline, indole and lactone Compound. Specific examples thereof may include piperazine, N-mercaptopiperazine, N-ethylpiperazine, hydroxyethylpiperazine, N-(2-aminoethyl)piperazine, N,Ν'-dimethyl Piperazine; morpholine, N-methylmorpholine, Ν-ethylmorpholine, Ν-stupylmorpholine, Ν-cocoyl-morpholine, Ν-(2-aminoethyl)morpholine, hydrazine -(2-cyanoethyl)morpholine, Ν-(2-hydroxyethyl)morpholine, Ν-(2-hydroxypropyl)morpholine, Ν-ethinylmorpholine, Ν-methylhydrazine Porphyrin, fluorenyl-mercaptomorpholine-indole-oxide; picoline; fluorenyl-hydrazinopiperidine, 3,5-dimethylpiperidine' Ν-ethylpiperidine, Ν-(2-hydroxyethyl Piperidine; Ν-mercapto-4-branched bite |, Ν-vinyl-2-0 bottom bite | ; Ν-methyl ° Billow, Ν-methylpyrrolidone, Ν-ethyl-2 - pyrrolidone, Ν-isopropyl-2-pyrrolidone, Ν-butyl-2-pyrrolidone, Ν-tert-butyl-2-pyrrolidone, Ν-hexyl-2-pyrrolidone, Ν-octyl-2-pyrrolidone, hydrazine -benzyl-2-pyrrolidine, anthracene-cyclohexyl-2-pyrrolidone, anthracene-vinyl-2-pyrrolidone, anthracene-(2-hydroxyethyl)-2-pyrrolidone, anthracene-(2-methoxyl Ethyl)-2-pyrrolidone, ν-(2-methoxypropyl)-2-pyrrolidone, N-(2- Oxyethyl)-2-pyrrolidone; N-methylimidazolidinone, dimethylimidazolidinone, M-(2-hydroxyethyl)-ethylene urea; tetrahydrofuran, tetrahydro 1013155033-0 sterol; N-A Aniline, N,N-dimercaptoaniline, N-(2-hydroxyethyl) 1〇〇14888 Sound 1 Single Number A0101 Page 12 of 35 201233784 Stupid Amine, Anthracene, Bismuth-Double-(2- Hydroxyethyl)aniline, anthracene-ethyl-indole-(2-hydroxyethyl)aniline, anthracene, fluorene-diethyl o-toluidine, hydrazine-ethyl-hydrazine-(2-hydroxyethyl) m-toluidine Dimethylbenzylamine; τ-butyrolactone, methyl strepazine, 1,2,3-benzaldehyde, 1,2, 3_three gas, 1,2,4_three gas , 3_

Ο Amino-1,2,4-triazole, 4-amino-4Η-1,2,4-triazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2 - mercaptobenzotriazole, 5-mercaptobenzotriazole 'benzotriazole-5-bicarbonate, nitrobenzotriazole, 2-(2Η-stuppyrazole-2 -Based on -4,6-di-tert-butylphenol' or blocked such that it is used alone or in combination of two or more thereof. The ring-shaped compound may be included in an amount of 0.1 to 50 wt.% (more preferably 2 to 10 wt.%) with respect to a total of 100 wt.% of the texture etching solution composition for crystallizing the germanium wafer. If the content of the cyclic compound is in the above range, the wettability of the surface of the tantalum wafer can be effectively improved to minimize variations in texture quality and thus enhance uniformity. The present invention specifically selects and uses, at the most desirable level, a compound having a hydroxyl group, i.e., a polyoxyethylene (POE) compound, a polyoxygen (pop) compound or a copolymer thereof, as a surfactant. Surfactants, such as polyoxyethylene (P〇E) compounds, polyoxypropylene (POP) compounds, and copolymers thereof, can control the activity of hydroxyl ions [0H-] in the texture etching solution composition to be greatly reduced for ^

The difference in the etching rate in the Siul direction, and therefore the composition used in the same amount, increases the number of processed sheets. In addition, since the degree of innovation of the surface of the crystallization wafer can be improved, the amount of hydrogen bubbles in the custodial student can be quickly reduced to prevent the occurrence of bubble chambers, thereby reducing texture quality deviation during texture formation and ultimately enhancing it. Uniformity and appearance. Page 13 of 35 pages 10014888^^ A〇101 1013155033-0 201233784 Polyoxyethylene (10)) surfactants may include, for example, polyoxyethylene glycol polyoxyethylene-ol, polyoxyethylene mono-propyl Ethylene glycol single (three stupid Ethyl amide, poly = six burning base, polyoxyethylene laurel, more ethoxylated oil = two oxyethylene hard basal bond, polyoxyethylene oxime Three burnt fine, polyoxyethylene fine, polyoxymethylene fine, polyoxyethylene lion _ chest, polyoxyethylene gan _, Yu (four) silk _, Yu Yi _ fine, polyoxyethylene benzene fine, recorded B埽 丝 丝 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Oxygen ethylene lauryl vinegar, polyoxyethylene stearyl sulfonate, polyoxyethylene oleyl ester, polyoxyethylene ethoxylate, polyoxyethylene stearate, polyoxyethylene tallow amine Further, the polyoxypropylene (POP) surfactant may be polypropylene glycol. Similarly, a polyoxyethylene (10) compound and a copolymer of the polyoxypropylene/POP compound may be used, and the copolymer includes For example, polyoxyethylene women's recording of a copolymer of polypropylene, polyoxyethylene-polyoxypropylene fluorenyl squama copolymer, polyoxyethylene-polyoxypropylene 10-synthesis copolymer, polyoxyethylene-polyoxypropylene 12 silk county, polyoxygen hexamethylene copolymer, polyoxyethylene-polyoxypropylene test ethylhexyl back polymer = lactide ~ polyoxypropylene Yaki county polymer, polyoxyethylene - polyoxypropylene hard A fat-blend fine copolymer, a glycerin-added polyoxyethylene-polyoxypropylene copolymer, a diamine addition polyoxyethylene-polyoxypropylene-polymer, or the like. These materials may be used singly or in combination of two or more thereof. Relative to the total (10) wt. of the texture of the crystallized stone wafer, the composition of the solution can be 0. __ to 1 wt. % (preferably 〇〇 _ to 〇) 10014888 early production number A0101 page 14 / total Zhanbai 201233784 The amount of %' more preferably 0.0 deleted to (U wt%) includes a group consisting of polyoxyethylene (POE) compounds, polyoxypropylene (p〇p) compounds and copolymers thereof. At least one surfactant. If the amount is in the above 祀, the area-texture quality deviation on the surface of the texture-forming crystal 18 can be reduced, the appearance of the wafer can be improved, and the same amount of the used composition can be used. The number of treated sheets may be increased. In addition to at least a surfactant selected from the group consisting of polyoxyethylene (10) compounds, polyoxypropylene (p〇p) compounds, and groups of filaments thereof, The textured etching solution composition of the crystalline germanium wafer may further comprise a fluorosurfactant. Fluorinated surfactants and polyoxyl compound-based surfactants can reduce the surface tension of the surnamed solution composition, thus promoting the improvement of the surface wettability of the crystallized wafers, and the final lions are evenly paved. . The kind of the fluorosurfactant is not particularly limited, but may include, for example, an anionic surfactant such as a perfluoroalkyl sulphate, a full gas hydrate, a perfluoroalkyl sulfate, a perfluoroalkane. Phosphate, etc.; cationic surfactants such as perfluoroalkylamine salts, perfluoroalkyl quaternary ammonium salts, etc.; amphoteric surfactants such as perfluoroalkylcarboxybetaine, perfluoroalkylsulfonate Acid beet test, etc.; nonionic surfactants, such as fluoropolyoxyethylene, perfluorohomopolyethylene, and the like. This compound may have an alkyl group having 1 to 30 carbon atoms. These materials may be used singly or in combination of two or more thereof. 1013155033-0 Relative to a total of 100 wt.% of the texture etching solution composition for crystallization of the germanium wafer, may be from 0.00000 to 1 Wt% (preferably 〇. 00001 to 0. J wt.%, and more preferably The amount of o.oooi to 〇.〖wt%) includes fluorine boundary 10014888# single number A〇101 page 15 / total 35 pages 201233784 surfactant. If the amount is within the above range, the wettability of the surface of the wafer can be effectively improved. Further, the texture etching solution composition for crystallizing the germanium wafer may further include a compound containing cerium oxide. The cerium oxide-containing compound can be physically adsorbed on the surface of the crystallization wafer and acts as a mask, thus making the surface of the germanium wafer micro-pyramid. The cerium oxide-containing compound may include a powdery, gelatinous or liquid metal silicate compound. More particularly, a fine silica dioxide powder; a Na 2 〇 stabilized ruthenium sol solution; a K 2 O stabilized ruthenium sol solution; an acidic solution stabilized ruthenium sol solution; a ruthenium; 3 stable ruthenium sol solution; At least one organic solvent-stabilized cerium sol solution, the at least one organic solvent being selected from the group consisting of ethanol, propanol, ethylene glycol, methyl ethyl lanyl and methyl isobutyl ketone; liquid sodium oxalate; Liquid potassium citrate; liquid lithium niobate' and the like. The foregoing materials may be used singly or in combination of two or more thereof. The amount of the 0. 00001 to 10 wt.% (preferably 〇, 〇〇〇1 to 1 wt.%) may include oxidizing, relative to a total of 100 wt% of the texture etching solution composition used for the crystallization of the ruthenium wafer. Broken compound. If the amount is within the above range, the micropyramid can be easily formed on the surface of the crystallized wafer. The texture etching solution composition for crystallizing the germanium wafer may further include water as a remaining portion of a total of 100 wt.% (composition). The type of water is not particularly limited. However, deionized water is preferred, and deionized water for semiconductor processes having a specific resistance of 18 Μ Ω/cm or higher is more preferred. In addition to the compound, the texture etching solution composition for the crystalline germanium wafer according to the present invention containing the composition as described above may be specifically used for 10014888#单号Α〇101 page 16/35 pages 1013155033-0 201233784 The most desirable content is at least one surfactant selected from the group consisting of polyoxyethylene (poly) compounds, polyoxypropylene (pop) compounds, and copolymers thereof, thereby minimizing the texture quality in the region on the surface of the crystallized wafer. Deviation and enhance the uniformity of the texture "Therefore, the absorption of sunlight is maximized and the light reflectivity is reduced, thus increasing the light absorption efficiency. In addition, the greatly reduced amount of the composition used can increase the number of processed sheets, and does not require the introduction of an alternative etching solution component during text formation, thereby achieving excellent productivity and economic advantages in terms of cost. f) The texture surname solution composition for crystallizing germanium wafers according to the present invention may be suitably used in a conventional etching process, such as immersion, spraying, embedding type, etc., and the like. The present invention provides a texture etching method for a crystalline germanium wafer using the texture etching solution composition described above for crystallizing germanium wafers. The texture etching method of the crystalline germanium wafer may include immersing the crystalline germanium wafer in a composition for crystallizing the crystal wafer, spraying the composition, or crystallizing the crystal while spraying The circle is immersed in it.

J may not particularly limit the number of times of immersion and/or spraying, and in the case where immersion and spraying are simultaneously performed, the order of operation may not be limited. Immersion, sprinkler or immersion and sprinkler can be performed at 50 to 100 C for 3 sec to 6 〇 minutes. As described above, the crystallization wafer texture remnant method according to the present invention does not require introduction of an additional aeration device to supply oxygen, and therefore, is economical in terms of initial production and processing costs, and even by a simple process, Can form a uniform micro-pyramid structure. In the following, a preferred embodiment will be described in more detail with reference to the examples and to a more specific example than the 100H888#single number A〇101 page/35 pages 201233784. However, it will be apparent to those skilled in the art that the present invention is provided by way of example, and various modifications and alternatives are possible without departing from the scope and spirit of the invention. Such modifications and substitutions are fully included in the invention as defined by the scope of the appended claims. Example Examples 1 to 27 by mixing 2 wt.% potassium hydroxide (ΚΟΗ), 0·016 wt% polyoxyethylene benzyl ether (PBE), 〇.〇16 wt.% perfluoroalkyl sulfate A texture etching solution composition of the crystalline germanium wafer of Example 1 was prepared (PFAS) and deionized water as the remainder. The same procedure as described in Example 1 was performed for Examples 2 to 27, except that the basic components listed in Table 1 below and their contents were used. Here, the content means the weight %. [Table 1] _48^Single ship A〇101 Page 18 of 35 1013155033-0 201233784

Part of the test compound compound POE-based interface live 13⁄4 agent fluorosurfactant containing sulphur dioxide compound deionized water type content wake up type containing child type seam type containing child content example 1 - 2 - - PBE 0.016 PFAS 0.016 - - Remaining example 2 ΚΟΗ 2 - - POE 0.016 PFAS 0.016 - - Remaining example 3 ΚΟΗ 2 - - PPE 0.016 PFAS 0,016 - - Example remaining 4 ΚΟΗ 2 - - PPE 0.016 PFAP 0.016 - - Example remaining 5 NaOH 2 - - PPE 0.016 PFAS 0.016 - - Example remaining 6 ΚΟΗ 3 - - PPE 0.016 PFAS 0.016 - - Example remaining 7 ΚΟΗ 4 - - PPE 0.016 PFAS 0.016 - - Example remaining 8 ΚΟΗ 2 - - PPE 0.048 PFAS 0.016 - - Remaining Some examples 9 ΚΟΗ 2 - PPE 0.016 PFAS 0.032 - - Remaining part example - 2 - - PPE 0.016 PFAS 0.016 SSS 0.5 Remaining example" ΚΟΗ 2 - - PPE 0.016 PFAS 0.016 CS 0.5 Remaining example 12 ΚΟΗ 2 NMP 1.5 PBE 0.008 PFAS 0.008 - - Example remaining 13 ΚΟΗ 2 NMP 2 PBE 0.008 PFAS 0.008 - - Examples of the rest ΚΟΗ 2 NMP 2 POE 0,008 PFAS 0.008 » - Example of the remaining 15 ΚΟΗ 2 NMP 2 PPE 0.008 PFAS .0.008 - - Example remaining 16 ΚΟΗ 2 NMP 2 PPE 0.008 PFAP 0.008 - - Remaining NaOH 1 NMP 1.9 PPE 0,008 PFAP 0.008 Examples Port AEP 0.1 Remaining part ΚΟΗ 2 NMP 1.9 PPE 0.008 PFAP 0.008 • • Example 18 GBL 0.1 Remaining Lions 2 NMM 1.9 PPE 0.008 PFAP 0.008 • • Example 19 AEP 0.1 Remaining ΚΟΗ 2 NMM 1.9 PPE 0.008 PFAP 0.008 • Example 20 GBL 0.1 Remaining example 21 NaOH I NMP 2 PPE 0.008 PFAS 0.008 - - Remaining part 1001488#单单A〇101 Page 19 of 351013155033-0 201233784 Example 22 KOH 3 NMP 2 PPE 0.008 PFAS 0.008 - • Some examples 23 KOH 4 NMP 2 PPE 0.008 PFAS 0.008 - - Example remaining 24 KOH 2 NMP 2 PPE 0.024 PFAS 0.008 - Example remaining 25 KOH 2 NMP 2 PPE 0.008 PFAS 0.016 Remaining example 26 KOH 2 NMP 1.9 PPE 0.008 PFAS 0.008 SSS 0.5 Remaining example 27 KOH 2 NMP 1.9 PPE 0.008 PFAS 0.008 c s 0.5 Remaining part KOH : «Gasification potassium NaOH : Hydrogen surface PBE : Polyoxyethylene benzyl ether POE : Polyoxyethylene octyl phenyl ether PPE : Polyethylene vinyl phenyl ether PFAS : All rebel base sulfate PFAP : Perfluoro total surface salt sss : wmmm CS : Miscellaneous solution of Na20 crop [0005] Comparative Examples 1 to 1 0 In addition to the basic components listed in Table 2 below and their contents, for comparison Examples 1 through 10 perform the same procedure as described in Example 1. Here, the content means % by weight. 10014888 鲁单编请01 Page 20/35 pages 1013155033-0 201233784 Read 2] Partially animated miscellaneous compound POE-based interface active contact agent Active agent containing oxidized chemical deionized water type containing Comparison type mm content content comparison example ί - 2 - - PPH - PFAS 0.016 - - Remaining comparative example 2 ΚΟΗ 2 - - PPE 1.2 PFAS 0.016 - - Remaining comparative lag 3 1.5. WL% g oxidation狎 (KOH), 5 wt.% of isopropion (1 ΡΑ) and deionized water as the remainder of the comparative example 4 1.5 wt·% of gas oxidized C KOH), 5 wt% of ethylene glycol (EG) and go Ionic water as the remaining part & Example 5 1-5 wt% of 氪 oxygen like f (KOH), 5 wt·% of diethylene glycol monomethyl enchantment and deionized water as the remaining part of the profitable example 6 1.5 wt % Hydrogen _ (iCOKO, 5 wt% monoethanol® and deionized water as a comparative example 7 KOH 2 NMP 2 PPE - PFAS 0.008 - - Remaining comparative example 8 KOH 2 NMP 2 PPE 1.2 PFAS 0.008 - Remaining comparative example 9 KOH 2 HMP PPE 0 PFAS 0.008 Remaining part Comparative Example 10 KOH 2 NMP 51 PPE 0.008 PFAS 0.008 - Remaining part ΚΟΗ : Potassium argon oxide ΝΜΡ : Mu methyl _ 翩 ΡΡΕ : Polyoxyethylene phenyl acid PFAS:.

Experimental example 1

The texture etching solution composition of each of the crystalline germanium wafers prepared according to Examples 1 to 11 and Comparative Examples 1 to 6 was evaluated by the following procedure, and the results are shown in Table 3. The single crystal germanium wafer substrate was immersed in the prepared single crystal germanium wafer texture etching solution composition at 80 ° C for 20 minutes. (1) Texture uniformity The texture deviation formed on the surface of the single crystal germanium wafer substrate obtained after the texture etching, that is, the 'uniformity' was visually observed through a digital camera and a 3D optical microscope, and evaluated according to the following criteria. In this regard, 10014888#^^^ A〇101 Page 21 of 35 1013155033-0 201233784, the color shows the self-change to the texture processing temperature over time, so no texture testing is required. <Evaluation Criteria> ◎ - A pyramid is formed on the entire wafer substrate. 〇 - No pyramid is formed on a portion of the wafer substrate (less than 5% of the portion without the pyramid). Δ-The pyramid is not formed on a part of the wafer substrate (the portion having no pyramid is in the range of 5 to 50%). X- generally does not form a pyramid on most of the wafer substrate (partial pyramid without pyramid is 90% or more)" (2) Average pyramid size (in m) measured using a scanning electron microscope (SEM) The size of each micropyramid formed on the surface of the single crystal silicon wafer obtained after the etching. Here, after measuring the size of each micro-pyramid formed on the unit area, the average of the measured sizes is calculated. (3) Average reflectivity (%) In the example in which light having a light wavelength range of 400 to 800 nm was irradiated on the surface of the single crystal germanium wafer substrate obtained after the texture etching, the average reflectance was measured using a UV spectrometer. [Table 3] 10014888#单号A0101 Page 22 of 351013155033-0 201233784 Partial texture uniformity Average pyramid large/J, (pi) Average reflectivity (%) Example 1 ◎ 6 12.02 Example 2 ◎ 6 12.12 Example 3 ◎ 6 11.82 Example 4 ◎ 6 12.15 Example 5 ◎ 7 12.04 Example 6 ◎ 8 12.29 Example 7 ◎ 10 12.24 Example 8 ◎ 6 12.32 Example 9 ◎ 6 12.17 Example 10 ◎ 5 12.19 . Example 11 ◎ 4 12.08 Comparison Note Example 1 X 12 20.11 Comparative Example 2 X 6 23.21 Comparative Example 3 〇5 13.22 Comparative Example 4 X 10 21.13 Comparative Example 5 Colored Etching Solution Comparative Example 6 Colored Etching Solution

[0006] As shown in Table 3, in the example in which the texture etching was performed using any of the texture etching solution compositions prepared in Examples 1 to 11, the display was shown to reduce the micropyramid on the surface of the single crystal germanium wafer. Quality deviation in the area'

Thus ensuring excellent uniformity and reducing light reflectivity, which in turn improves light absorption efficiency, the texture etching solution composition comprises a basic compound; selected from polyoxyethylene (POE) compounds, polyoxypropylene (POP) At least one surfactant in the group consisting of the compound and its copolymer; and water. The examples also show that the fluorosurfactant of the present invention can reduce the surface tension of the composition of the etching solution, thereby promoting the improvement of the surface wettability of the crystallized wafer and ultimately preventing excessive etching by the alkaline compound. 1 is a 3D optical microscopy of the surface of a crystalline germanium wafer obtained by text etching using the texture etching solution composition prepared in Example 1, and the numbering should be 01. 23/35 pages 1013155033- 0 201233784 Mirror image; and Fig. 2 is a SEM photograph depicting the surface of the crystallized wafer obtained after texture etching as described above. From these patterns, it was confirmed that micro-pyramids have been formed on the entire surface of the wafer, thereby enhancing texture uniformity while reducing the variation in quality. On the other hand, when the texture etching solution composition of the surfactant which is not based on the polyoxygen compound prepared in Comparative Example 1 was used, the dream of the yttrium hydroxide caused by the occurrence of yttrium hydroxide occurred randomly throughout the wafer. Pyramid was formed; in the case where the texture etching solution composition containing the surfactant based on excess polyoxygen compound prepared in Comparative Example 2 was used, the etching rate was reduced, and thus no pyramid was generated. Regarding the texture etching solution composition prepared in Comparative Example 3, a temperature gradient caused by continuous introduction of the composition during text formation (due to the low boiling point of isopropanol (IPA) included in the composition of the etching solution) ) has caused texture failure and increased cost. The texture etching solution composition prepared in Comparative Example 4 exhibited quite deteriorated characteristics in terms of texture uniformity and light reflectivity as compared with the products in the examples. Further, the texture etching solution compositions prepared in Comparative Examples 5 and 6 have exhibited self-changes in temperature-to-texture temperature over time. Experimental Example 2 The texture etching effect of each of the crystalline stone wafer texture surname solution compositions prepared according to Examples 12 to 27 and Comparative Examples 3 to 1 was carried out by the same procedure as described in Experimental Example 1. Evaluation. Further, using each of the texture etching solution compositions prepared in Example 13 and Comparative Examples 7 to 1 , the processing ability was evaluated according to the following criteria. The results are shown in Tables 4 and 5 〇1013155033-0 10014888#单号A〇101 Page 24/35 pages 201233784 (4) Processing capacity (number of processed sheets) Used in Example 13 and Comparative Examples 7 to 1 Each of the texture etching solution compositions prepared in the texture was used to texture etch the single crystal germanium wafer substrate, and the number of processed sheets using the same amount of the composition was investigated. In this regard, referring to the number of processed slices in the example 13, the number of processed pieces of each of the comparative examples 7 to 1 is calculated. Then, based on the calculation results, the processing power is evaluated. <Evaluation Criteria> 〇_ is the same as the number of processed samples in Example 13. Δ- is 5 to 10% less than the number of processed sheets in the example 13. X - is less than 1% less than the number of processing in Example 13. [Table 4]

10014888#单编号 A0101 Page 25 of 35 1013155033-0 201233784 Section Example 12 Example 13 Example 14 Example 15 mm 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24

Example 2S Example 26 Example 27 Comparative Example 3 Comparative Example 4 Uniform homogeneity Average pyramid size (m) Average reflectivity (%) ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Ο 6 4 12.04 11.99 12.05 12.07 12.30 12.01 11.98 12.01 12.10 12.05 12.10 12.15 12.50 12.10 11.99 12.05 13.22 Comparative example 5 Comparative example 6 Comparative example 7 Comparative example 8 Comparative example 9 Comparative example 1〇 21.13 Color etching solution ◎ 4 12.62 X 6 24.38 —° 6 12.52 X 0.5 21.19

Example 13 Comparative Comparison Comparative Example 7 Example 8 Example 9 Reference 1 △ X Δ

&amp; When using each texture side solution composition prepared in Examples 12 to 27 to perform texture surrogate, it is shown that the quality deviation along the micropyramid position on the surface of the single-turn wafer is reduced' Ensuring an excellent sister, and reducing light reflection 1001 cents 88 production order number A0101 page 26 / total 35 pages 1013155033-0 201233784 sex, which in turn improves the luminous efficacy 'the texture etching solution composition includes; the most ideal content a basic compound, at least one surfactant selected from the group consisting of polyoxyethylene (p〇E) compounds, polyoxypropylene (POP) compounds, and copolymers thereof, and water. In addition, the number of processed sheets using the same amount of composition is increased, thus exhibiting excellent processing ability. Moreover, this example also shows that the cyclic compounds of the present invention increase the number of wafers processed (wafer) and achieve economic advantages with respect to productivity and cost by eliminating the need to introduce additional residual solution components during texturing. In addition, this example also shows that the fluorosurfactant of the present invention can reduce the surface tension of the etch solution composition, thereby promoting the improvement of the wettability of the surface of the crystallization wafer and ultimately preventing excessive characterization by the test compound. Figure 3 is a 3d optical microscopy image depicting the surface of a crystalline lithographic wafer obtained after the texture etch solution composition texture prepared in Example 12 is used; and Figure 4 is a depiction of the texture as described above. SEM photograph of the obtained crystalline BB round surface. From these patterns, the micro-pyramids have been formed in the entire surface of the wafer, thereby enhancing texture uniformity while reducing quality deviation. On the other hand, the comparative examples 7 and 9 in which the content of the polyoxygen compound-based surfactant or the cyclic compound is outside the range of the present invention have a reduced number of processed sheets, compared to the examples, using the same amount of the composition. , which in turn reduces processing power, although they show good results in terms of the formation of micro-pyramid structures on the surface of the crucible. Alternatively, using alkaline compounds, Comparative Examples 8 and 1 show a large reduction in the ruthenium etch rate, so that the pyramid cannot be fully formed. 1013155033-0 About the texture etching solution composition prepared in Comparative Example 3, since isopropyl alcohol (IPA) included in the etching solution composition is 10_8# single number A 〇 101 page 27 / total 35 pages 201233784 At low Buddha points, the temperature gradient caused by the continuous introduction of the composition during texture formation has resulted in texture failure and increased cost. The texture etching solution composition in Comparative Example 4 exhibited characteristics which were considerably deteriorated in terms of texture uniformity and light reflectivity as compared with the examples. The texture etching solution compositions of Comparative Examples 5 and 6 show self-changes from elevated temperature to texture processing temperature over time. While the invention has been described with respect to the preferred embodiments, the embodiments of the invention may be BRIEF DESCRIPTION OF THE DRAWINGS [7] The above and other objects, features and other advantages of the invention will be more clearly apparent from the following detailed description in conjunction with the accompanying drawings in which FIG. Inventive Example i for crystallization of germanium wafers. 3D optical microscopy images of etching solution compositions; Figure 2 is a depiction of a texture etching solution composition for use in a solar wafer prepared by using the exemplary crucible of the present invention. Scanning electron microscope (SEM) image of a single 矽 wafer surface that is textured and etched; DAY 3 is a depiction of a texture etching solution prepared by using the 丨2 wafer of the present invention. 3D optical microscopy images of the surface of the single-crystallized wafer on the surface of the texture; and Figure 4 depicts the texture of the wafer prepared by using the sample of the present invention 丨2 The SEM image of the surface of the wafer is engraved with the solution composition to form a texture.曰日曰石夕 [Main component symbol description] 10014888# early number A (3m page 28 / ϋ % first 1〇13155〇33^〇 201233784 L〇_”

1()()14888f单单A0101 Page 29 of 35 1013155033-0

Claims (1)

201233784 VII. Patent application scope: 1. A texture etching solution composition for a crystalline germanium wafer, comprising: 0.1 to 20 wt.% of a basic compound; 0.00000 1 to 1 wt. % of a polyoxygen At least one surfactant of the group consisting of ethylene (POE) compound, polyoxypropylene (POP) compound, and copolymer thereof; and water as the remainder. 2. The composition of claim 1, further comprising 0.1 to 50 wt.% of a cyclic compound. 3. The composition of claim 2, wherein the cyclic compound has a boiling point of 100 ° C or higher. 4. The composition of claim 1, wherein the basic compound is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetramethylolmonium, and tetrahydroethylammonium. At least one of the groups. 5. The composition of claim 1, wherein the surfactant is at least one selected from the group consisting of polyoxyethylene glycol, polyoxyethylene glycol oxime ether, Polyoxyethylene monoallyl ether, polyoxyethylene neopentyl ether, polyethylene glycol mono(tristyrylphenyl) ether, polyoxyethylene cetyl ether, polyoxyethylene lauryl ether, polyoxygen Ethylene oleyl ether, polyoxyethylene stearyl decyl ether, polyoxyethylene tridecyl ether, polyoxyethylene decyl ether, polyoxyethylene octyl ether, polyoxyethylene bisphenol A ether, polyoxyethylene Glycerol ether, polyoxyethylene nonylphenyl ether, polyoxyethylene benzyl ether, polyoxyethylene phenyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene phenol ether, provided with 6 to 30 carbon atoms Monoalkyl polyoxyethylene alkyl cyclohexyl ether, polyoxyethylene/5-naphthyl ether, polyoxyethylene ricinole, polyoxyethylene hydrogenated castor ether, polyoxyethylene lauryl ester, polyoxyethylene hard Lipidyl ester, polyoxyethylene oleyl ester; 10014888#单号A0101 Page 30/Total 35 Page 1013155033-0 201233784 5 Sodium laurylamine, Oxygen b-counteramine, polyoxyethylene tallow m _ polyoxyethylene ♦ polyoxypropylene copolymer, polyoxyethylene f polyoxypropyl ketone m (four) (four) ten _ burn j polymer, - polyoxyethylene - poly Oxypropylene propylene 12 copolymer, ^ oxyethylene - Wei _ _ _ _ listener, - polyoxyethylene _ poly 7 dil 2 ~ ethylhexene copolymer, - polyoxyethylene - polyoxypropylene lauryl ether "Polymer polyoxyethylene _ polyoxypropylene hard fat brewing base shouting copolymer, 7 oil addition polyoxyethylene-polyoxypropylene copolymer, ethylenediamine addition polyoxyethylene-polyoxypropylene copolymer. For example, the patent application is a second embodiment of the present invention, wherein the cyclic compound is at least one selected from the group consisting of: 娘, N-methyl 嗓, N-ethyl Oxazine, ethylpyrene, n_(2-aminoethyl)pyridazine N'N-methylpyrazine, morphine, N-methylmorphine, n-ethylmorpholine, N-phenyl Leaching, N-cocoyl-morpholine, heart (2_Aminoethyl)morpholine, N-(2-cyanoethyl) chlorene, n-(2-ylethylethyl) spider, n_ (2_propyl), lin, N-ethyl hydrazino, N-mercapto, n-methylmorpholine-N-oxide, picoline, N-methylpiperidine, 3, 5-_Dimethyl piperidine, N-ethyl abbreviated, N-(2-ethyl) bite, N-methyl-4-Bentone, N-vinyl-2-piperidone, N- Methyl pyrrolidine, N-decyl pyrrolidone, N-ethyl-2-pyridone, N-isopropyl-2-pyrrolidone, N-butyl-2-pyrrolidone, N-tert-butyl- 2-pyrrolidone, N-hexyl-2-pyrrolidone, N-octyl-2-°biha, 1, N-benzyl-2-«*bigcodone, N-cyclohexyl-2-0 Compared with ketone, N-ethyl fluorenyl-2-0 ratio, each calcination, N-(2-ethyl)-2-pyrrolidone, N-(2-methoxy-4- )-2-pyrrolidone, 1013155033-0 N-(2-methylmercaptopropyl)-2-° pyrrolidone, N-(2-ethoxyethyl)-2-0 piroxicam _, N - 曱基0米 brewing I, 曱 曱 base flavor. 圭 bit _, N- (2- via 10014888^ single number A 〇 1 (U Page 31 / 35 pages 201233784 ethyl) - ethylene urea, tetrahydrofuran , tetrahydrofurfuryl alcohol 'N-methyl phenylamine, N,N-dimethylaniline, N-(2-hydroxyethyl)aniline, N,N-bis-(2-ethyl)aniline, N-B -N-(2-hydroxyethyl)aniline, n,N-diethyl-o-toluidine, N-ethyl-N-(2-hydroxyethyl) m-toluidine, dimethyl ketamine, r- Butyrolactone, phenylphenyltriazine, 1,2,3-benzotris, 1,2,3-triazide, 1,2,4-triazo. Sit, 3-amino-1 , 2,4-triazo. Sodium, 4-amino-4H-1,2,4-triazide, 1-p-benzotriazol, m-methylbenzotriazole, 2-mercaptobenzotriene Oxazole, 5-methylbenzotriazole, benzotriazole-5-bicarbonate, nitrobenzotriazinium and 2-(2H-benzotriazol-2-yl)-4, 6-di-tert-butylphenol 7. The composition according to claim 1, further comprising: 〇〇〇〇〇()1 to 1 wt.% At least a fluorosurfactant selected from the group consisting of perfluoroalkyl carboxylates, perfluoroalkyl sulfonates, perfluoroalkyl sulfates, 'perfluoroalkyl sulphates, perfluoroalkanes a group consisting of a base amine salt, a perfluoroalkyl quaternary ammonium salt, a perfluoroalkylcarboxybetaine, a perfluoroalkylsulfonic acid betaine, a fluoroalkyl polyoxyethylene, and a perfluoroalkyl polyoxyethylene, wherein Each has a monoalkyl group having from 1 to 30 carbon atoms. 8. The composition as described in claim 1 further comprising at least one compound containing a cerium oxide, the compound containing cerium oxide being selected from the group consisting of: finely divided sulphur dioxide Xi powder; Na2 〇 stabilized *^ stone less sol solution; J [2〇 stable one sol solution; one sol solution stabilized with an acidic solution; Nils stable sol solution; 1013155033- 0 at least one organic solvent-stabilized monosol sol solution, the at least one organic solvent selected from the group consisting of ethanol, propanol, ethylene glycol, methyl ethyl ketone, and methyl isobutyl ketone; liquid sodium citrate ; liquid potassium citrate; and liquid tannic acid 1001488# single number A〇l〇1 page 32 / total 35 pages 201233784 chain. 9. A texture etching method for a crystalline germanium wafer, comprising: immersing the crystalline germanium wafer in a texture etching/liquid composition as described in any one of claims 1 to 8 'spraying the composition Or immersing the crystallization wafer in the composition while spraying the composition. The method described in item 7 is executed at up to 10 °C. Shout, spurt or immerse in the sea for 30 seconds to 6 minutes. ❹ 488#单单A〇101 Page 33 of 35 1013155033-0