TW201233662A - Process and materials for making contained layers and devices made with same - Google Patents

Process and materials for making contained layers and devices made with same Download PDF

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TW201233662A
TW201233662A TW100147055A TW100147055A TW201233662A TW 201233662 A TW201233662 A TW 201233662A TW 100147055 A TW100147055 A TW 100147055A TW 100147055 A TW100147055 A TW 100147055A TW 201233662 A TW201233662 A TW 201233662A
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group
layer
same
different
occurrence
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TW100147055A
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Chinese (zh)
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Nora Sabina Radu
Adam Fennimore
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Du Pont
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Abstract

There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a priming material to form a priming layer; exposing the priming layer patternwise with radiation resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a pattern of priming layer, wherein the pattern of priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid depositions on the pattern of priming layer on the first layer. The priming material has In Formula I: Ar1 through Ar4 are the same or different and are aryl groups; L is a spiro group, an adamantyl group, bicyclic cyclohexyl, deuterated analogs thereof, or substituted derivatives thereof; R1 is the same or different at each occurrence and is D, F, alkyl, aryl, alkoxy, silyl, or a crosslinkable group, where adjacent R1 groups can be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is H, D, or halogen; a is the same or different at each occurrence and in an integer from 0-4; and n is an integer greater than 0.

Description

201233662 六、發明說明: 【相關申請案資料】 本專财請案依據35 u s c § ιΐ9⑷主張於麵 .20日申请之臨時專利申請案第6麗4,848號之 I:先權,其以引用方式完整併林說明書中。 【發明所屬之技術領域】 本發明一般係關於製造電子裝置之方法。其進一步 係關於由該方法製成之裝置。 【先前技術】 在許多不同種類的電子設備中,有使用有機活性材 料的電子裝置。在此種裝置中,兩個電極之間夾置一有 機活性層。 電子裝置之一類型係有機發光二極體(OLED)。由 於有機發光二極體的高功率變換效率及低加工處理成 本’應用於顯示器有相當前景。尤其對於以電池供電、 可攜式電子裝置,包括行動電話、個人數位助理(PDA)、 手持式個人電腦(掌上電腦)及多樣化數位光碟(DVD)播 放裝置,這種顯示器更具前景。此等應用要求顯示器能 顯示高量資訊内容、具全彩及快速視訊比回應時間,以 及低功率消耗。 目前製造全彩有機發光二極體的研究為朝向具成 本效益、高產量之彩色像素製造方法發展。對於用液體 製程製造單色顯示器,已廣泛採用旋轉塗布方法(參見 例如,David Braun及Alan J. Hee§er,物理應用期刊第 201233662 58期第衝頁(年)),而’製 對製造單色顯示器所使用的程序做出某此修?益需要 為了製造具有全彩影像之顯示器,每改^例如’ 成三個子像素,每一個子像素發出顯^=3係分 色、綠色及藍色中之…因將全彩像素分割成三 素,需要修改目前的處理方法,以防止有色液 = 墨水)散開及色彩混合。 (即 於文獻中已記載用於提供墨水圍阻體 C〇ntainment)的數種方法。此係基於圍阻結構 (containmem structure)、表面張力不連續性(su办= tension discontinuity)及兩者之組合。圍阻結構:像素: ⑽丨丨)、像素堤(bank)等’係用以阻止散開的幾何障 物。為了使此等結構具有效率,該等結構必須為大型、 可與經沉積材料之濕膜厚度相符。當發射墨水印在此等 結構上時,會把結構表面弄濕,使得在該結構附近的厚 度,勻度減低。於本文中,用語r發射」及「發光」係 可交替使用。因此,必須將該結構移到發射「像素」區 外,使得於操作中看不出非均勻度。由於顯示器之空間 有限(尤其是高解析度顯示器),此會減少像素的可用發 射區域。可實施的圍阻結構在沉積電荷注入層及電荷傳 輸層之連續層時,常對於品質造成負面影響。結果,所 有層必須以印刷為之。 此外,當存在有低表面張力材料的印刷區或氣相沉 積區時’會造成表面張力不連續。此等低表面張力材 料通*必須在該像素區域中印刷或塗佈第一有機活性201233662 VI. Description of invention: [Related application materials] This special account request is based on 35 usc § ιΐ9(4). The provisional patent application filed on the 20th is No. 4,848 I: First right, which is complete by reference. In the forest manual. TECHNICAL FIELD OF THE INVENTION The present invention generally relates to a method of manufacturing an electronic device. It is further related to the device made by the method. [Prior Art] Among many different kinds of electronic devices, there are electronic devices using organic active materials. In such a device, an organic active layer is interposed between the two electrodes. One type of electronic device is an organic light emitting diode (OLED). Due to the high power conversion efficiency and low processing cost of the organic light-emitting diode, there is considerable prospect for application to displays. Especially for battery-powered, portable electronic devices, including mobile phones, personal digital assistants (PDAs), handheld personal computers (PDAs), and a variety of digital compact disc (DVD) playback devices, such displays are more promising. These applications require displays to display high volume of information content, full color and fast video response time, and low power consumption. At present, the research on manufacturing full-color organic light-emitting diodes is toward the development of color-pixel manufacturing methods with cost-effectiveness and high yield. For the production of monochrome displays using liquid processes, spin coating methods have been widely used (see, for example, David Braun and Alan J. Hee§er, Journal of Physical Applications, No. 201233662, Issue 58 (Year)), and 'Manufacturing Orders' Does the program used by the color display make some repairs? In order to manufacture a display with full-color image, each change, for example, into three sub-pixels, each sub-pixel emits a display of ^=3 color separation, green and blue... because the full-color pixel is divided into three elements Need to modify the current processing method to prevent the dispersion of colored liquid = ink) and color mixing. (Some methods for providing an ink containment body C〇ntainment have been described in the literature). This is based on a containmem structure, surface tension discontinuity (su run = tension discontinuity), and a combination of the two. Enclosure structure: Pixels: (10) 丨丨), pixel banks, etc. are used to prevent the spread of geometrical obstacles. In order for these structures to be efficient, the structures must be large and conform to the wet film thickness of the deposited material. When the ink is printed on these structures, the surface of the structure is wetted so that the thickness in the vicinity of the structure is reduced. As used herein, the terms r emission and illuminating are used interchangeably. Therefore, the structure must be moved outside the emission "pixel" area so that non-uniformity is not seen in the operation. This reduces the available emission area of the pixel due to the limited space available for the display (especially for high resolution displays). The achievable containment structure often has a negative impact on quality when depositing a continuous layer of charge injection layer and charge transport layer. As a result, all layers must be printed. In addition, when there is a printing zone or a vapor deposition zone of a material having a low surface tension, the surface tension may be discontinuous. These low surface tension materials must be printed or coated with the first organic activity in the pixel region

6 201233662 層之前,就先行塗敷。通常,#塗佈_的非發射層時, 此等處理會影響品質,所以所有層必須以印刷為 兩種墨水圍阻技術之-組合例為光阻堤結構(像素 井、通道)之四氟化碳(CF4)電漿處理。通常,所有的活 性層必須印刷在像素區域中。 上述所有H阻方法具有妨礙連續塗佈的缺點。對一 層或多層的連續塗佈實有其需求,因為其具較高的產率 及較低的設備成本。因此,關於形成電子裝置的改良方 法有其需求。 【發明内容】 —本發明提供-種用於在—第—層上形成—被包含 第一層之方法’該方法包括: 形成具有一第一表面能之該第一層; 以一底塗材料處理該第—層以形成一底塗層; 以圖案化方式使該底塗層曝露於輻射,產生曝 露區域和未曝露區域; 顯影該底塗層以自該等未曝露區域有效移除 該底塗層’產生-具有-底塗層圖案之第—層,其中該 底塗層圖案具有-第二表面能,且該第二表面能大於該 第一表面能;以及 於該第-層上進行液相沉積以在該底塗層圖 案上形成該第二層;6 201233662 Before the layer, apply it first. Usually, when the non-emissive layer of #coating_ is used, these processes will affect the quality, so all layers must be printed as two ink containment technologies - a combination of examples of light barrier banks (pixel wells, channels) of PTFE Carbon (CF4) plasma treatment. Typically, all active layers must be printed in the pixel area. All of the above H resistance methods have the disadvantage of hindering continuous coating. There is a need for continuous coating of one or more layers because of its high yield and low equipment cost. Therefore, there is a need for an improved method of forming an electronic device. SUMMARY OF THE INVENTION - The present invention provides a method for forming a first layer in a layer - the method includes: forming the first layer having a first surface energy; Treating the first layer to form an undercoat layer; patterning the undercoat layer to radiation to produce an exposed area and an unexposed area; developing the undercoat layer to effectively remove the bottom layer from the unexposed areas The coating 'generates - a layer having a - undercoat pattern, wherein the undercoat pattern has a second surface energy, and the second surface energy is greater than the first surface energy; and performing on the first layer Liquid deposition to form the second layer on the undercoat pattern;

其中該底塗材料具有式I 201233662Wherein the primer material has the formula I 201233662

其中:among them:

Ar1至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; R1於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰R1基團可結合在一起 以形成一芳族環; R2於每次出現時係相同或不同,且係選自於由Η、 D及i素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以 及 η為大於0的整數。 本發明亦提供一種用於製造一有機電子裝置之方 法,該有機電子裝置包括一電極,具有設於其上之一第 一有機活性層及一第二有機活性層,該方法包括: 在該電極上形成具有一第一表面能之第一有 機活性層; 以一底塗材料處理該第一有機活性層以形成 一底塗層; 201233662 以圖案化方式使該底塗層曝露於輻射,產生曝 露區域和未曝露區域; 顯影該底塗層以自該等未曝露區域有效移除 該底塗層,產生一具有一底塗層圖案之第一活性有機 層,其中該底塗層圖案具有一第二表面能,且該第二表 面能大於該第一表面能;以及 於該第一有機活性層上進行液相沉積以在該 底塗層圖案上形成該第二有機活性層;Ar1 to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group, wherein adjacent R1 groups Can be joined together to form an aromatic ring; R2 is the same or different at each occurrence, and is selected from the group consisting of Η, D, and i; a is the same or different at each occurrence And is an integer from 0 to 4; and η is an integer greater than zero. The present invention also provides a method for fabricating an organic electronic device comprising an electrode having a first organic active layer and a second organic active layer disposed thereon, the method comprising: at the electrode Forming a first organic active layer having a first surface energy; treating the first organic active layer with a primer material to form an undercoat layer; 201233662 exposing the undercoat layer to radiation in a patterned manner to cause exposure a region and an unexposed region; developing the undercoat layer to effectively remove the undercoat layer from the unexposed regions to produce a first active organic layer having an undercoating pattern, wherein the undercoating pattern has a first Two surface energy, and the second surface energy is greater than the first surface energy; and performing liquid deposition on the first organic active layer to form the second organic active layer on the undercoat layer pattern;

其中該底塗材料具有式IWherein the primer material has the formula I

其中=Where =

Ar1至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; R1於每次出現時係相同或不同,且係選自於由D、 F、烧基、芳基、烧氧基、梦基及一可交聯基團 201233662 所組成之群組,其中相鄰R1基團可結合在一起 以形成一芳族環; R2於每次出現時係相同或不同,且係選自於由Η、 D及齒素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以 η為大於0的整數。 提供一種有機電子裝置,包括位於一電極上的一第 一有機活性層及一第二有機活性層’且更包括一介於該 第一及第二有機活性層之間的圖案化底塗層,其中該第 二有機活性層僅存在該底塗層存在之區域,且其中該底 塗層包括一具有式I之材料Ar1 to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, dream base and a crosslinkable group 201233662, wherein adjacent R1 groups The lumps may be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of Η, D, and dentate; a is the same at each occurrence or Different and are integers from 0 to 4; η is an integer greater than zero. An organic electronic device includes a first organic active layer and a second organic active layer on an electrode and further comprising a patterned undercoat layer interposed between the first and second organic active layers, wherein The second organic active layer only exists in a region where the undercoat layer exists, and wherein the undercoat layer comprises a material having the formula I

其中:among them:

Ar1至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; R1於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰R1基團可結合在一起 以形成一芳族環; 10 201233662 R2於每次出現時係相同或不同,且係選自於由Η、 D及鹵素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以 及 η為大於0的整數。 前述一般性描述及以下詳細描述僅為例示性及說 明性的,且不限制如隨附申請專利範圍所定義之本發 明。 【實施方式】 本發明提供一種用於在一第一層上形成一被包含 第二層之方法,該方法包括: 形成具有一第一表面能之該第一層; 以一底塗材料處理該第一層以形成一底塗層; 以圖案化方式使該底塗層曝露於輻射,產生曝 露區域和未曝露區域; 顯影該底塗層以自該等未曝露區域有效移除 該底塗層,產生一具有一底塗層圖案之第一層,其中該 底塗層圖案具有一第二表面能,且該第二表面能大於該 第一表面能;以及 於該第一層上進行液相沉積以在該底塗層圖 案上形成該第二層;Ar1 to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group, wherein adjacent R1 groups May be combined to form an aromatic ring; 10 201233662 R2 is the same or different at each occurrence and is selected from the group consisting of ruthenium, D and halogen; a is the same at each occurrence or Different and are integers from 0 to 4; and η is an integer greater than zero. The above general description and the following detailed description are to be considered as illustrative and not restrict [Embodiment] The present invention provides a method for forming a second layer on a first layer, the method comprising: forming the first layer having a first surface energy; treating the substrate with a primer material a first layer to form an undercoat layer; the primer layer is exposed to radiation in a patterned manner to produce an exposed area and an unexposed area; and the undercoat layer is developed to effectively remove the undercoat layer from the unexposed areas Forming a first layer having an undercoating pattern, wherein the undercoating pattern has a second surface energy, and the second surface energy is greater than the first surface energy; and performing a liquid phase on the first layer Depositing to form the second layer on the undercoat layer pattern;

其中該底塗材料具有式I 201233662Wherein the primer material has the formula I 201233662

其中:among them:

Ar至Ar為相同或不同且為方基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; R1於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰基團可結合在一起 以形成一芳族環; R2於每次出現時係相同或不同,且係選自於由Η、 D及函素所組成之群組; a在母次出現時係相同或不同且係〇_4之整數;以 及 η為大於〇的整數。 上述所描述的各種態樣與實施例僅為例示性且非 限制性。在閲讀本說明書後,熟習此項技術者瞭解在不 偏離本發明之範疇下’亦可能有其他態樣與實施例。 根攄下述之詳細說明與申請專利範圍,易使該等實 施例中之一個或多個實施例的其他特徵及益處更加彰 顯。以下之洋細說明首先描述術語的定義和闡明,接著 為方法、底塗材料、有機電子裝置,最後則是實例。Ar to Ar are the same or different and are a square group; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group, wherein adjacent groups are Combining together to form an aromatic ring; R2 is the same or different at each occurrence, and is selected from the group consisting of Η, D, and a pheromone; a is the same or different when the mother appears An integer of 〇4; and η is an integer greater than 〇. The various aspects and embodiments described above are illustrative only and not limiting. After reading this specification, those skilled in the art will appreciate that other aspects and embodiments may be made without departing from the scope of the invention. Other features and benefits of one or more of the embodiments will be apparent from the following detailed description and claims. The following detailed description first describes the definition and clarification of terms, followed by methods, primer materials, organic electronic devices, and finally examples.

S 12 201233662 1 · 術語的定義和闡明 在提出下述實施例之細節前,先對某些術語加以定 義或闡明。 當術語「活性」係指一層或材料時,該術語「活性」 為指具有電子或電輻射性質的一層或材料。在一電子裝 置中,一活性材料為在電性上有助於該裝置的操作。活 性材料之實例包括,但不侷限於傳導、注入、傳輸或陴 擋電荷之材料(其中該電荷可以是電子或電洞),或者發 射輻射,或在接收輻射時呈現電子-電洞對之濃度變化 的材料。非活性材料之實例包括但不侷限於平坦化材 料、絕緣材料及環境隔絕材料。 當術語「被包含(contained)」指一層時,其意指印 刷時不會明顯延展超出該層所沉積的區域之外,儘管一 般在沒有被包含的情況下,印刷傾向會超出該沉積區 域。具「化學圍阻」(chemical containment),為指該層 被表面能效應所限制。具「物理圍阻」(physieal containment) ’為指該層被實體障壁結構所限制。一層 可被化學圍阻及物理圍阻之一組合所限制。 術語「顯影(developing和development)」係指一材 料曝露於II射之區域和未曝露於輻射之區域間之物理 差異’及移除該曝露區域或該未曝露區域。 術語「電極」係意指經組裝,以在-電子組件内傳 輸載子的一構件或結構。例如,一電極可為一陽極、一 陰極、一電容器電極、-閘極電極等等。-電極可包括 一電晶體、一電容器、一電阻器、一電感器、一二 -電子組件、-電力供應器之一部分,或其任何組合。 13 201233662 當術語「氟化」指—有機化合物時,言亥術語「氟化」 和在違化合物巾鍵結至碳的—或多個氫原子已被氟取 代。上述術語包括部分及完全氟化的材料。 術°吾I」可與「膜」交換使用,其指-覆蓋-所 欲區域之塗層1術語不受尺寸料卜該區域可與一整 個裝置-樣大或與-特定功能區域(例如,實際視覺顯 不)樣小’或者與一單次像素一樣小。可藉由任何習 知_技術,包括氣相沈積、液相沈積(連續及不連續 技術)及熱傳遞’形成層及膜…層可經 或可為一整體及未圖案化 阅系化 術語「液體組成物」係意指―材料已轉於其 形成-溶液之賴介質、—㈣已散布於其巾而形 分散液之液體介質或__材料已懸浮於其中而形^ 浮液或一乳化液之液體介質。 術語「液體介質」係意指—液體材料,其包括 液體,、-㈣之組合、-溶液、—分散液、—懸浮液以 及-乳化液。無論存在—種或以上之溶劑,皆使 介質來表示》 w ,術語「有機電子裝置」係意指一包括一或多 半導體層或半導體材料的裝置。一有機電子裝置包人 但不限於:(1)將電能轉換為輻射能之裝置(例如發^二 極體、發光二極體顯示器、二極體雷射或照明板),^ 利用電子程序偵測訊號之裝置(例如光偵測器、光導電 池、光敏電阻、光控開關、光電晶.體、光電管、紅外線 (「IR」)偵測器或生物感測器),(3)將輻射能轉換為電 能之裝置(例如光伏裝置或太陽能電池)與(4)包含二個 201233662 或以上電子組件(其包含一個或以上之有機半導體層) 之裝置(例如電晶體或二極體),或上述(丨)至(4)項之裝 置的任何組合。 術語「輻射(radiating和radiation)」係指添加任何 形式的能量,包括任何形式的熱量、全部電磁波譜或次 原子粒子,不管此種輻射是否為射線、波或粒子的形式。 術語「表面能」為自一材料創造出一單位表面積所 需之能量。表面能之特徵在於,具有一給定表面能的液 體材料不會弄濕具有一足夠低表面能的表面。與具有較 高表面能之一層相比,較難以弄濕具有低表面能之一 層。 本文所使用之術語「在......之上(over)」不一定代表 一層、構件或結構係緊鄰於另一層、構件或結構,或與 之接觸。或許會有額外或中介之層、構件或結構存在。 如本文所用之術5#「包含」、「包括」、「具有」或其 任何其他變型意欲涵蓋非排他性的包括物。例如,含有 清單列出的複數元件的一製程、方法、製品或裝置不一 定僅限於清單上所列出的這些元件而已,而是可以包括 未明確列出但卻是該製程、方法、製品或設裝置固有的 其他元件。本文所揭露之標的之另一實施例係描述為主 要由某些特徵或元件所組成,其中並不存在會本質上改 變該實施例之操作原理或的區別性特點的特徵或元 件。本文所記載之標的之又一實施例係描述為由某些特 徵或元件所組成’在此實施例或其非實質變化中,僅存 在明破指出或描述的特徵或元件。 15 201233662 此外,除非另有明確相反陳述,否則「或」係指包 含性的「或」’而不疋指排他性的「或」。例如,以下任 何一種情況均滿足條件A或B : A是真(或存在的)且b 是偽(或不存在的),A是偽(或不存在的)且b是真(或存 在的)’以及A和B都是真(或存在的)。 又,使用一」或「一個」來描述本文所述的元件 和組件。這樣做僅僅是為了方便,並且對本發明範疇提 供一般性的意義。除非很明顯地另指他意,這種描述應 被理解為包括一個或至少一個,並且該單數也同時包括 複數。 對應於元素週期$中之行的族編號使用如S 12 201233662 1 • Definitions and clarification of terms Certain terms are defined or clarified before the details of the following examples are presented. When the term "active" refers to a layer or material, the term "active" refers to a layer or material having electronic or electrical radiation properties. In an electronic device, an active material is electrically contributing to the operation of the device. Examples of active materials include, but are not limited to, materials that conduct, inject, transport, or block charge (where the charge can be electrons or holes), or emit radiation, or exhibit electron-hole pair concentrations upon receipt of radiation. Changing materials. Examples of inactive materials include, but are not limited to, planarizing materials, insulating materials, and environmentally insulating materials. When the term "contained" refers to a layer, it means that the printing does not significantly extend beyond the area deposited by the layer, although generally not in the case of inclusion, the printing tends to extend beyond the deposition area. "chemical containment" means that the layer is limited by surface energy effects. "Physieal containment" means that the layer is limited by the physical barrier structure. One layer can be limited by a combination of chemical containment and physical containment. The term "developing and development" refers to the physical difference between the exposure of a material to the area of the II shot and the area not exposed to radiation and the removal of the exposed area or the unexposed area. The term "electrode" means a component or structure that is assembled to transport a carrier within an electronic component. For example, an electrode can be an anode, a cathode, a capacitor electrode, a gate electrode, or the like. The electrode may comprise a transistor, a capacitor, a resistor, an inductor, a two-electron assembly, a portion of a power supply, or any combination thereof. 13 201233662 When the term "fluorinated" refers to an organic compound, the term "fluorinated" and the bond to carbon in the compound towel are replaced by fluorine. The above terms include partially and fully fluorinated materials. The method of "I" can be used interchangeably with "film", which means that the term "coating 1 - covering the desired area" is not subject to size. This area can be combined with an entire device - or with - a specific functional area (for example, The actual visual display is not as small as 'or as small as a single sub-pixel. The layer and film layer can be formed by any conventional technique, including vapor deposition, liquid deposition (continuous and discontinuous techniques) and heat transfer, or can be a whole and unpatterned terminology. "Liquid composition" means "the material has been transferred to the solution-solution medium,- (iv) the liquid medium that has been dispersed in the towel-like dispersion or the material has been suspended therein and the form floats or emulsifies Liquid medium for liquids. The term "liquid medium" means a liquid material comprising a liquid, a combination of -(iv), a solution, a dispersion, a suspension, and an emulsion. The term "organic electronic device" means a device comprising one or more semiconductor layers or semiconductor materials, whether or not a solvent is present. An organic electronic device is packaged but not limited to: (1) a device that converts electrical energy into radiant energy (for example, a diode, a light-emitting diode display, a diode laser or a lighting panel), and utilizes electronic program detection. A device for measuring signals (such as a photodetector, a photoconductive battery, a photoresistor, a photoswitch, a photocell, a photocell, an infrared ("IR") detector or a biosensor), (3) a radiant energy a device (for example, a photovoltaic device or a solar cell) that converts to electrical energy and (4) a device (eg, a transistor or a diode) that includes two or more electronic components of 201233662 or higher (including one or more organic semiconductor layers), or Any combination of devices (丨) to (4). The term "radiating and radiation" refers to the addition of any form of energy, including any form of heat, all electromagnetic spectra or subatomic particles, whether or not such radiation is in the form of rays, waves or particles. The term "surface energy" is the energy required to create a unit surface area from a material. Surface energy is characterized in that a liquid material having a given surface energy does not wet a surface having a sufficiently low surface energy. It is more difficult to wet a layer having a lower surface energy than a layer having a higher surface energy. The term "over" as used herein does not necessarily mean that a layer, member or structure is in the singular, or in contact with another layer, member or structure. There may be additional or intermediate layers, components or structures. As used herein, 5# "including", "including", "having" or any other variation thereof is intended to cover non-exclusive inclusions. For example, a process, method, article, or device that comprises the plurality of elements listed in the list is not necessarily limited to the elements listed in the list, but may include the process, method, article or Set other components inherent in the device. The other embodiments of the subject matter disclosed herein are intended to be illustrative of a certain feature or element, and there are no features or elements that would substantially alter the operational principles or distinct features of the embodiments. Still another embodiment of the subject matter described herein is described as being comprised of certain features or elements. In this embodiment or its non-substantial variations, there are only those features or elements that are pointed out or described. 15 201233662 In addition, unless otherwise stated to the contrary, “or” means an inclusive “or” rather than an exclusive “or”. For example, any of the following cases satisfies condition A or B: A is true (or existing) and b is false (or non-existent), A is pseudo (or nonexistent) and b is true (or exists) 'And A and B are both true (or existing). Also, the use of "a" or "an" This is done for convenience only and provides a general sense of the scope of the invention. This description should be understood to include one or at least one, and the singular also includes the plural. The family number corresponding to the line in the element period $ is used as

Handbook of Chemistry and Physics 第 81 版(200Q-200V) 中記載之「新符號」慣用語。 除非另有定義,本文所用之所有技術與科學術語均 與本發明所屬技術領域具有一般知識者所通常理解的 意義相同。儘管類似或同等於本文所述内容之方法或材 料可用於本發明之實施例的實施或測試,但合適的方法 與材料仍如下所述。除非引用特定段落,否則本文所述 之所有公開案、專利申請案、專利以及其他參考文獻均 以引用方式全文併入本文中。在發生衝突的情況下,以 包括定義在内之本說明書為準。此外,該等材料、方法 及實例僅係說明性質’而不意欲為限制拘束。 在本文未描述之範圍内,許多關於特定材料、加工 行為(processing act)及電路的細節係習知的,且可在有 機發光二極體顯示器、光偵測器、光伏打及半導性構件 技術領域的教科書及其他來源中找到。The "new symbol" idioms described in the 81st edition of Handbook of Chemistry and Physics (200Q-200V). Unless otherwise defined, all technical and scientific terms used herein have the same meaning meaning Although methods or materials similar or equivalent to those described herein can be used in the practice or testing of embodiments of the present invention, suitable methods and materials are still described below. All publications, patent applications, patents, and other references herein are hereby incorporated by reference in their entirety in their entirety in their entirety. In the event of a conflict, the present specification, including definitions, will control. Moreover, the materials, methods, and examples are merely illustrative of the nature and are not intended to be limiting. Many details regarding specific materials, processing activities, and circuits are well within the scope not described herein, and can be found in organic light-emitting diode displays, photodetectors, photovoltaic devices, and semi-conductive members. Found in textbooks and other sources in the field of technology.

S 16 201233662 2. 方法 於本文所提供之方法中,係形成一第一層,於該第 一層上形成一底塗層,將該底塗層以圖案曝露於輻 射,將該底塗層顯影以自該未曝露區域有效地移除該底 塗層,以形成其上具有一圖案化底塗層之第一層。術語 「有效地移除」係指該底塗層係實質上完全由該未曝露 區域中移除。亦可部分移除該曝露區域中之底塗層,以 使剩餘之底塗層圖案比原始底塗層更薄。底塗層圖案具 有一表面能’尚於s亥第一層之表面能。利用液相沉積將 第一層形成於s亥第一層之底塗層圖案上。 一種測定該相對表面能之方式係為比較一已知液 體在該第一有機層上之接觸角度與同一液體在該曝露 顯影後底塗層(以下稱「顯影底塗層」)上之接觸角度。 於本文中’術語「接觸角」意指圖1中所示之角度φ。 以一液體介質之微滴而言,角度φ是由該表面之平面與 該微滴之外緣到該表面之一連線的交點所定義。另外, 於塗布後’該液滴在該表面達一平衡位置後,方測量角 度〇 ’即「靜態接觸角」。該接觸角隨著表面能減小而 增加。有數家製造商製造能夠測量接觸角的設備。 在某些實施例中’該第一層與苯甲醚間的接觸角係 大於40。;在某些實施例中係大於5〇。;在某些實施例 中係大於60。;在某些實施例中係大於70。。在某些實 施例中,該顯影底塗層與苯甲醚之接觸角度小於;3〇。; 在某些實施例中,小於2〇。;在某些實施例中,小於1〇。。 在某些實施例中’一已知溶劑與該顯影底塗層之接觸角 201233662 度至少較與該第一層之接觸角度小20。;在某些實施例 中,一已知溶劑與該顯影底塗層之接觸角度至=較與铉 第一層之接觸角度小30。;在某些實施例中,一已知= 劑與该顯影底塗層之接觸角度至少較與該第一芦 觸角度小40。。 θ接 在一實施例中,該第一層係一沉積在一基板上之有 機層。該第-層可圖案化或未圖案化。在一實施例中, 該第一層係在一電子裝置中的一有機活性層。在一實施 例中,該第一層包括一氟化材料。 可藉由任何沉積技術(例如,氣相沉積技術、液相 沉積技術及熱轉印(thermal transfer)技術)來形成該第一 層。在一實施例中,藉由一液相沉積技術沉積該第一 層,然後再加以乾燥。於此情形中,一第一材料係溶解 或分散於一液體介質中。液相沉積法可為連續或非連續 者。連續液相沉積技術包括但不侷限於,旋轉塗佈、滾 軸塗佈、簾塗布、浸塗、狹縫模具式塗佈、喷塗及連續 喷嘴塗佈。非連續液相沉積技術包括但不揭限於噴墨印 刷、凹版印刷、柔版印刷及網版印刷,在一實施例中, 係以連續液相沉積技術沉積該第一層。可在室溫或升溫 條件下進行乾燥步驟,只要該第一材料及任何底層材料 未遭到破壞即可。 接著以一底塗層處理該第一層。此意謂著,將底塗 材料塗敷於該第-層上,且與該第—層直接接觸,以形 成該底塗層。該底塗層包括一組成物,當其曝露於輻射 時會反應而形成一種材料,此材料相較於未曝露之底塗 201233662 材料更不易自下方的第一層移除。此改變必須足以達成 該曝露與非曝露區域之物理區別及顯影。 在一實施例中,底塗材料係可聚合或可交聯。 在一實施例中,當曝露於輻射時,該底塗材料會與 下方區域反應。此反應之確實機制取決於使用之材料、。 在曝露於輻射之後,藉由一合適的顯影處理,有效地在 未曝露區域中移除該底塗層。在某些實施例中,僅該未 曝露區域中之底塗層受到移除。在某些實施例中,=曝 露區域中之底塗層亦部分移除,在該等區域留下一較^ 層體。在某些實施例中,餘留在曝露區域中的底塗層厚 度係小於50 A。在某些實施例中,餘留在曝露區域中 的底塗層厚度主要係一單層的厚度。 在某些實施例中,該底漆材料經氘化。術語「氘化」 係意指至少一個H已被D所取代。術語「氘化類似物j 係指其中一或多個可用氫已被氘取代之化合物或基團 的結構類似物。在一氘化化合物或氘化類似物中,所存 在的氘比天然豐度含量多出至少1〇〇倍。在某些實施例 中,該底漆材料至少10〇/〇氘化。所謂的「%氘化的」或 「%氘化」意謂氘核與質子加氘核之總和的比率,其以 百分比表示。在某些實施例中,該底塗材料係至少2〇〇/0 氘化的;在某些實施例中,至少3〇%氘化;在某些實施 例中,至少40%氘化;在某些實施例中,至少5〇%氘化; 在某些實施例中,至少60%氘化;在某些實施例中,至 少70%氘化;在某些實施例中,至少8〇%氘化;在某些 實施例中,至少9〇%氘化;在某些實施例中,為1〇〇% 氮化的。 201233662 人氘化的底塗材料可較不易被電洞、電子、激子或其 組0所降解。氘化有抑制該底塗層於裝置操作期間的劣 =之潛力,進而可改善裝置使用壽命。一般而言,該改 口不需要犧牲其它裝置性質。另外,氛化化合物經常比 非氣化類似物具有更高的空氣穩定性(air tolerance)。此 可導致在製備及純化該材料,以及在㈣崎料形成電 子裝置的過程中具有更大的製程容差。 可以任何已知的沉積方法塗敷該底塗層。在一實施 例中,製作該底塗層時並未將之加入至溶劑。在一實施 例中,該底塗層係經氣相沉積製成。 在一實施例中,該底塗層透過凝結製程製成。若該 底塗層係藉由來自蒸氣相的冷凝進行塗敷,且在蒸氣凝 結期間該表面層溫度太高時,則該底塗層會轉移至一有 機^板表面的孔洞或自由體積中。在某些實施例中,該 有機基板係維持在低於基板材料之玻璃轉移溫度或融 化溫度的溫度。該溫度維持可透過任何已知技藝加以實 現,例如將該第一層放置於以流動液體或氣體冷卻之表 面。 在一實施例中,在凝結步驟前先將該底塗層施加於 臨時支架,形成均勻之底塗層塗層,此可透過任何沉積 方法達成,包括液相沉積、氣相沉積及熱轉印。在一實 施例中,該底塗層係經連續液相沉積技術沉積於該臨時 支架〜儿積β亥底塗層所用液體媒介之選擇取決於該底塗 層本身之實際性質。在一實施例中,該材料係經旋轉塗 佈沉積。經塗佈之臨時支撐件接著作為加熱的熱源,以 形成用於冷凝步驟的蒸氣。S 16 201233662 2. Method In the method provided herein, a first layer is formed, an undercoat layer is formed on the first layer, and the undercoat layer is exposed to radiation in a pattern to develop the undercoat layer. The undercoat layer is effectively removed from the unexposed regions to form a first layer having a patterned undercoat thereon. The term "effectively removed" means that the undercoat layer is substantially completely removed from the unexposed area. The undercoat layer in the exposed area may also be partially removed to make the remaining undercoat layer pattern thinner than the original undercoat layer. The undercoat pattern has a surface energy that is still at the surface energy of the first layer. The first layer is formed on the undercoat pattern of the first layer of shai by liquid deposition. One way to determine the relative surface energy is to compare the contact angle of a known liquid on the first organic layer with the contact angle of the same liquid on the undercoat (hereinafter referred to as "developing undercoat") after the exposure and development. . As used herein, the term "contact angle" means the angle φ shown in FIG. In the case of a droplet of a liquid medium, the angle φ is defined by the intersection of the plane of the surface and the line from the outer edge of the droplet to one of the surfaces. Further, after the application, the droplet reaches an equilibrium position on the surface, and the angle 〇 ′, that is, the "static contact angle" is measured. This contact angle increases as the surface energy decreases. Several manufacturers manufacture equipment that can measure contact angles. In certain embodiments, the contact angle between the first layer and the anisole is greater than 40. In some embodiments, it is greater than 5 Å. In some embodiments it is greater than 60. In some embodiments, it is greater than 70. . In some embodiments, the contact angle of the developed undercoat layer to anisole is less than 3 Å. In some embodiments, less than 2 〇. In some embodiments, less than 1 〇. . In some embodiments, the contact angle of a known solvent with the developed undercoat layer is at least 20 degrees less than the contact angle with the first layer. In some embodiments, the contact angle of a known solvent with the developed undercoat layer is less than 30 with respect to the contact angle of the first layer. In some embodiments, a known agent has a contact angle with the developed undercoat layer that is at least 40 less than the first reed angle. . θ. In one embodiment, the first layer is an organic layer deposited on a substrate. The first layer can be patterned or unpatterned. In one embodiment, the first layer is an organic active layer in an electronic device. In one embodiment, the first layer comprises a fluorinated material. The first layer can be formed by any deposition technique (e.g., vapor deposition technique, liquid deposition technique, and thermal transfer technique). In one embodiment, the first layer is deposited by a liquid deposition technique and then dried. In this case, a first material is dissolved or dispersed in a liquid medium. The liquid deposition method can be continuous or discontinuous. Continuous liquid deposition techniques include, but are not limited to, spin coating, roller coating, curtain coating, dip coating, slot die coating, spray coating, and continuous nozzle coating. Discontinuous liquid deposition techniques include, but are not limited to, ink jet printing, gravure printing, flexographic printing, and screen printing. In one embodiment, the first layer is deposited by continuous liquid deposition techniques. The drying step can be carried out at room temperature or elevated temperature as long as the first material and any underlying material are not damaged. The first layer is then treated with an undercoat. This means that a primer material is applied to the first layer and is in direct contact with the first layer to form the undercoat layer. The undercoat layer comprises a composition that reacts when exposed to radiation to form a material that is less susceptible to removal from the underlying first layer than the unexposed primer 201233662. This change must be sufficient to achieve physical differentiation and development of the exposed and non-exposed areas. In an embodiment, the primer material is polymerizable or crosslinkable. In one embodiment, the primer material reacts with the underlying regions when exposed to radiation. The exact mechanism of this reaction depends on the materials used. After exposure to radiation, the undercoat layer is effectively removed in the unexposed areas by a suitable development process. In some embodiments, only the undercoat layer in the unexposed area is removed. In some embodiments, the undercoat layer in the = exposed area is also partially removed, leaving a layer of layers in the areas. In certain embodiments, the thickness of the primer layer remaining in the exposed area is less than 50 Å. In some embodiments, the thickness of the undercoat remaining in the exposed areas is primarily the thickness of a single layer. In certain embodiments, the primer material is deuterated. The term "deuterated" means that at least one H has been replaced by D. The term "deuterated analog j" refers to a structural analog of a compound or group in which one or more available hydrogens have been replaced by deuterium. In a deuterated compound or deuterated analog, the rhodium is present in a natural abundance. The content is at least 1 times higher. In some embodiments, the primer material is at least 10 〇 / 〇氘. The so-called "% 氘" or "% 氘" means 氘 与 and proton 氘The ratio of the sum of the cores, expressed as a percentage. In certain embodiments, the primer material is at least 2 〇〇 / 0 氘; in some embodiments, at least 3 〇 % 氘; in some embodiments, at least 40% 氘; In certain embodiments, at least 5%% deuterated; in certain embodiments, at least 60% deuterated; in certain embodiments, at least 70% deuterated; in some embodiments, at least 8% In some embodiments, at least 9% by weight; in some embodiments, 1% by weight. 201233662 People's deuterated primer materials are less susceptible to degradation by holes, electrons, excitons or groups thereof. Deuteration has the potential to inhibit the inferiority of the undercoat during operation of the device, thereby improving device life. In general, this modification does not require sacrificing other device properties. In addition, aerosolized compounds often have higher air tolerance than non-vaporized analogs. This can result in greater process tolerances in the preparation and purification of the material, as well as in the process of forming electronic devices in (4). The undercoat layer can be applied by any known deposition method. In one embodiment, the undercoat layer is not added to the solvent when it is formed. In one embodiment, the undercoat layer is formed by vapor deposition. In one embodiment, the undercoat layer is formed by a coagulation process. If the undercoat layer is applied by condensation from the vapor phase and the surface layer temperature is too high during vapor condensation, the undercoat layer is transferred to a hole or free volume of the surface of the machine. In some embodiments, the organic substrate is maintained at a temperature below the glass transition temperature or melting temperature of the substrate material. This temperature maintenance can be achieved by any known technique, such as placing the first layer on a surface that is cooled by a flowing liquid or gas. In one embodiment, the primer layer is applied to the temporary support prior to the coagulation step to form a uniform primer coating, which can be achieved by any deposition method, including liquid deposition, vapor deposition, and thermal transfer. . In one embodiment, the choice of the undercoat layer for the liquid medium deposited by the continuous liquid phase deposition technique on the temporary support layer depends on the actual nature of the undercoat layer itself. In one embodiment, the material is deposited by spin coating. The coated temporary support is attached to a heated heat source to form a vapor for the condensation step.

S 20 201233662 β亥底塗層之施用可利用連續或批次加工完成。例 如:在批次加工中,可將一或多個裝置同時以該底塗層 塗佈,爾後同時曝露於輻射源。在一連續處理中]在一 傳送帶或其它輪送裝置上傳輸的裝置將會通過一站 台,於該站台,該等裝置係循序地塗佈底塗層,然後繼 續通過一站台,於該站台,該等裝置係循序地曝露於一 輻射源。該加工製程中可部分為連續性,其他部分為 次性。 在一實施例中’該底塗層由第二液體組成物沉積而 成。如上所述’液相沉積方法可為連續或不連續。在一 實施例中,使用一連續液相沉積方法沉積該底塗液體組 成物。用於沉積該底塗層之液體媒介,其選擇係取決於 該底塗材料本身的確切性質。 該底塗層形成後,將其曝露於輻射。如上所述,所 用輻射之類型取決於該底塗層之敏感度。該曝露係以圖 案化方式為之。本文所使用之術語「圖案化方式 (patternwise)」代表僅會使一材料或層之被選擇部分曝 露。可使用任何已知的成像技術進行圖案化方式曝露。 在一實施例中,係經由透過遮罩進行曝露形成該圖案。 在一實施例中,藉由將被選擇部份曝露於一光柵化雷射 (rastered laser) ’而完成該圖案。曝露時間可為數秒至數 分鐘,取決於使用底塗層之特定化學性質。當使用雷射 時’對於每一個個別區域,曝露時間更短,曝露時間取 決於該雷射的功率。可於空氣中或在一惰性大氣環境中 執行曝露步驟’其取決於材料之敏感度。 201233662 在一實施例中,該輻射係選自於由紫外光輻射(1〇 至390 nm)、可見光輻射(39〇至77〇 nm)、紅外線輻射 (770至1〇 nm)及其組合所組成之群組,包括同時處理 及1列處理。在一實施例中,該輻射選自可見光輻射以 及紫外線輻射。在一實施例中,該輻射波長範圍為3〇〇 至450 nm。在一實施例中,該輻射為深uv(2〇〇至3〇〇 nm)。在另一實施例中,該紫外光輻射波長在3〇〇及4〇〇 nm之間。在另一實施例中,該輻射波長範圍在4⑼至 450 nm。在一實施例中,該輻射為熱輻射。在一實施例 中,該曝露輻射之方式為加熱。該加熱步驟之溫度及持 續時間使該底塗層之至少一物理性質改變,而不損及該 發光區域之任何下方層體。在一實施例中,該加熱溫度 低於250°C。在一實施例中,該加熱溫度低於15〇它^ 經輻射中圖案性曝露之後,顯影該底塗層。顯影可 透過任何已知技術達成《此等技術已廣泛用於光阻與印 刷領域。顯影技術之實例包括但不限於加熱(蒸發)、液 體媒介處理(清洗)、吸收性材料處理(吸墨)、黏性材料 處理等。顯影步驟可有效地移除未曝露區域中的底塗 層。之後底塗層只存在曝露區域中。亦可部分移除曝露 區域中的底塗層,但仍需留下足夠的量,以使曝露與未 曝露區域之間可存在可濕性之差異。 在一實施例中,該底塗層之輻射曝露造成該底塗層 在溶劑中溶解性或分散性之改變。在此,透過濕式顯影 處理達成顯影。該處理通常涉及了以一會溶解、分散或 剝離(lift-off)—區域類型之溶劑進行清洗。在一實施例 中’以圖案化方式曝露於輻射的步驟,導致該底塗層之S 20 201233662 The application of the β-coating can be accomplished by continuous or batch processing. For example, in batch processing, one or more devices may be simultaneously coated with the primer layer and then exposed to the radiation source at the same time. In a continuous process, a device that is transported on a conveyor or other transfer device will pass through a station at which the substrates are sequentially applied to the undercoat and then continue through a station at which the station is The devices are sequentially exposed to a source of radiation. This process can be partially continuous and the other parts are secondary. In one embodiment, the undercoat layer is deposited from a second liquid composition. As described above, the liquid phase deposition method may be continuous or discontinuous. In one embodiment, the primer liquid composition is deposited using a continuous liquid deposition process. The liquid medium used to deposit the undercoat layer depends on the exact nature of the undercoat material itself. After the undercoat layer is formed, it is exposed to radiation. As mentioned above, the type of radiation used depends on the sensitivity of the undercoat. The exposure is in a graphical manner. As used herein, the term "patternwise" means that only a selected portion of a material or layer is exposed. Patterned exposure can be performed using any known imaging technique. In one embodiment, the pattern is formed by exposure through a mask. In one embodiment, the pattern is completed by exposing the selected portion to a rasterized laser. The exposure time can range from a few seconds to a few minutes, depending on the particular chemistry of the undercoat layer used. When using a laser, the exposure time is shorter for each individual area, and the exposure time depends on the power of the laser. The exposure step can be performed in air or in an inert atmosphere. It depends on the sensitivity of the material. 201233662 In one embodiment, the radiation is selected from the group consisting of ultraviolet radiation (1 〇 to 390 nm), visible radiation (39 〇 to 77 〇 nm), infrared radiation (770 to 1 〇 nm), and combinations thereof. Groups, including simultaneous processing and 1 column processing. In one embodiment, the radiation is selected from the group consisting of visible radiation and ultraviolet radiation. In one embodiment, the radiation wavelength ranges from 3 至 to 450 nm. In one embodiment, the radiation is deep uv (2 〇〇 to 3 〇〇 nm). In another embodiment, the ultraviolet radiation has a wavelength between 3 Å and 4 〇〇 nm. In another embodiment, the radiation wavelength ranges from 4 (9) to 450 nm. In an embodiment, the radiation is thermal radiation. In one embodiment, the manner of exposing the radiation is heating. The temperature and duration of the heating step changes at least one physical property of the undercoat layer without damaging any underlying layers of the luminescent region. In one embodiment, the heating temperature is below 250 °C. In one embodiment, the undercoating is developed after the heating temperature is below 15 Å and after patterning exposure in the radiation. Development can be achieved by any known technique. "These technologies have been widely used in the field of photoresist and printing. Examples of development techniques include, but are not limited to, heating (evaporation), liquid medium treatment (cleaning), absorbent material treatment (ink absorption), viscous material treatment, and the like. The development step effectively removes the undercoat layer in the unexposed areas. The undercoat layer is then only present in the exposed area. The undercoat in the exposed area can also be partially removed, but still be left in sufficient amount to allow for differences in wettability between the exposed and unexposed areas. In one embodiment, the radiant exposure of the undercoat layer causes a change in the solubility or dispersibility of the undercoat layer in the solvent. Here, development is achieved by a wet development process. This treatment typically involves cleaning with a solvent that will dissolve, disperse or lift-off the type of zone. In an embodiment, the step of being exposed to radiation in a patterning manner results in the undercoat layer

S 22 201233662 埶戎顯單發f生在此,顯影町透過 二== 理:含加熱至該更易揮發材料 溫度。例如··對可聚入單'^度於該村料熱反應之 溫度且低於熱聚合溫度之溫度。應知其献反 或H發 導致ΪΖΓ巾,曝輯底塗層絲射之鱗露步驟 、軟m㈣溫纽變。在此情況 可句^乾式顯影處理達到顯影。一乾式顯影處理 可包括以-吸收性表面接觸該元件的一最外 軟的部分。可於-升溫條件下執行此乾式 顯衫/要其不會進—步影響剩餘區域的性質即可。 _影步誠生时底塗層的區域,及底層之第一 層f被覆蓋的區域。在某些實施例中,該圖案f匕底塗層 及未2區域與一給定溶劑間之接觸角差異至“ 為〇二某些實施例中至少為3〇。,在某些實施例中至少 接著於該第一層上底塗材 上,藉由液相沉積塗敷該第二層。在-實:例中影:第 二層係-電子裝置中的-第二有機活性層。 可以任何液相沉積技術塗敷該第二層。 物包括-第二材料,溶解或分散於-液體介質;將㊁ 液體組成物塗敷在經顯影底塗層之該圖案上,以乾= 23 201233662 第—層。魏體組成物具有-*大於該第一層表 ^表面能,但是大致與經顯影底塗層之表面能相同 1在兮麻m液體組成物會弄濕該經顯影底塗層’ 拒。^6被移除之區域中,仍會為第—層所排 拒。液體可散佈至轉理的第 底塗層之圖案二二= 上迷之連續液相沉積技術塗佈該第二層。 -恳t文所提供之—方法實施例中,該第—層及該第 有:活性層。該第-有機活性層係形成在-第- ,—底塗層係形成在該第-有機活性層上 ,曝露 二ϊ且顯影以形成經顯影底塗層圖案;及該第二有機 爲a係,成在邊第―有機活性層上的該經顯影底塗 ’使传該第二有機活性層僅存在於該底塗層上,且 具有與該底塗層相同的圖案。 在-實施例巾,該第—有機活性層储由一第一液 一 ^成物的液相沉積而形成,該第—賴組成物包括第 機雜材料及-第—㈣介質。紐體組成物係沉 在第-電極層上,然後乾燥以形成—層。在 一實施例 藉由it續液相沉積方法形成該第—有機活性層。 此種方法可有較高的產率及較低賴備成本。 、在一實施例中,該底塗層係藉由一第二液體組成物 以液相沉積而形成’該第二液體組成物包括在一第二液 體介質中的底塗材料。該第二液體介質可與該第一液體 "質相同或不同’只要其不會破壞該第 一層即可。如上 所述,液相沉積方法可為連續或不連續。在一實施例 中’使用-連續液相沉積方法沉積該底塗紐組成物。S 22 201233662 埶戎 单 单 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生 生For example, the temperature at which the temperature can be aggregated in the thermal reaction of the village material and is lower than the thermal polymerization temperature. It should be known that the anti-reverse or H-induced smear, the step of exposing the undercoating silk, and the soft m (four) temperature change. In this case, the development can be achieved by a dry development process. A dry development process can include contacting the outermost soft portion of the component with an absorbent surface. This dry type of shirt can be carried out under temperature-raising conditions or if it does not affect the nature of the remaining area. The area of the undercoat layer and the area where the first layer f of the bottom layer is covered. In some embodiments, the pattern has a difference in contact angle between the undercoat layer and the un-region and a given solvent to "is at least 3" in some embodiments. In some embodiments, The second layer is applied by liquid deposition at least on the first layer of the undercoat material. In the case of the second layer-electronic device, the second organic active layer can be used. The second layer is applied by a liquid deposition technique. The material comprises - a second material, dissolved or dispersed in a liquid medium; and the two liquid composition is applied to the pattern of the developed undercoat layer to dry = 23 201233662 —layer. The WEB composition has a -* greater than the surface energy of the first layer, but is substantially the same as the surface energy of the developed undercoat layer. 1 The liquid composition of the castor m wets the developed undercoat layer. Rejected. ^6 The area to be removed will still be rejected for the first layer. The liquid can be dispersed to the pattern of the undercoat layer of the second layer of the second layer = the continuous liquid deposition technique coated on the second - The method provided in the method embodiment, the first layer and the first: active layer. The first organic active layer Forming a --, - undercoat layer formed on the first-organic active layer, exposing the bismuth and developing to form a developed undercoat pattern; and the second organic is a-line, forming an organic-side The developed undercoat on the active layer is such that the second organic active layer is only present on the undercoat layer and has the same pattern as the undercoat layer. In the embodiment, the first organic active layer The storage is formed by liquid phase deposition of a first liquid composition, the first composition and the - (4) medium. The composition of the body is deposited on the first electrode layer, and then dried. To form a layer. In an embodiment, the first organic active layer is formed by a continuous liquid deposition method. This method can have higher yield and lower cost. In an embodiment, the The undercoat layer is formed by liquid phase deposition of a second liquid composition. The second liquid composition comprises a primer material in a second liquid medium. The second liquid medium can be associated with the first liquid ; the same or different 'as long as it does not destroy the first layer. As mentioned above, The liquid deposition method may be continuous or discontinuous. In one embodiment, the primer composition is deposited using a continuous liquid deposition method.

S 24 201233662 在一實施例中,該第二有機活性層係藉由一第三液 體組成物經液相沉積而形成,該第三液體組成物包括第 二有機活性材料及一第三液體介質。該第三液體介質可 與該第一液體介質及該第二液體介質相同或不同,只要 其不會破壞該第一層或該經顯影底塗層即可。在某些實 施例中,藉由印刷形成該第二有機活性層。 在某些實施例中,一第三層係塗敷在該第二層上, 使得該第三層只存在於該第二層上,且具有與該第二層 相同的圖案。可藉由上述用於該第二層之任何方法塗敷 該第三層。在某些實施例中,係以液相沉積技術塗敷該 第三層。在某些實施例中,該第三有機活性層係以印刷 法所形成,且該印刷法係選自於由喷墨印刷及連續式喷 嘴印刷所組成之群組。 在某些實施例中,該底塗材料係與該第二有機活性 材料相同。 經顯影底塗層之厚度取決於該材料之最終用途。在 某些實施例中,該經顯影底塗層的厚度係小於100 A。 在某些實施例中,該厚度範圍在1-50 A ;在某些實施例 中係5-30 A。 3.底塗材料S 24 201233662 In one embodiment, the second organic active layer is formed by liquid phase deposition of a third liquid composition comprising a second organic active material and a third liquid medium. The third liquid medium may be the same as or different from the first liquid medium and the second liquid medium as long as it does not damage the first layer or the developed undercoat layer. In some embodiments, the second organic active layer is formed by printing. In some embodiments, a third layer is applied over the second layer such that the third layer is only present on the second layer and has the same pattern as the second layer. The third layer can be applied by any of the methods described above for the second layer. In some embodiments, the third layer is applied by a liquid deposition technique. In some embodiments, the third organic active layer is formed by a printing process and the printing process is selected from the group consisting of ink jet printing and continuous nozzle printing. In certain embodiments, the primer material is the same as the second organic active material. The thickness of the developed undercoat layer depends on the end use of the material. In certain embodiments, the developed undercoat layer has a thickness of less than 100 Å. In certain embodiments, the thickness ranges from 1 to 50 A; in certain embodiments, from 5 to 30 A. 3. Primer materials

底塗材料具有式IPrimer material has the formula I

25 201233662 其中:25 201233662 Where:

Ar至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氛化類似物及其經取代衍生物所組成之群 組; R於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基'烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰R1基團可結合在—起 以形成一芳族環; R2於每次出現時係相同或不同’且係選自於由Η、 D及函素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以 及 η為大於〇的整數。 具有式I之化合物可為η==1之小分子、寡聚物或聚 合物。在某些實施例中,該化合物為Μη>20,000之聚合 物,在某些實施例中,該化合物為Μη >50,000之聚合 物。 在某些式I實施例中,η=1且R2為鹵素。此等化合 物可作為用於形成聚合性化合物的單體。在某些實施例 中,鹵素為C1或Br;在某些實施例中,鹵素為Br。 在某些式I實施例中,n=l且R2為Η或D。 在某些實施例中,具有式I之該化合物係經爪*化。 術語「氖化」係意指至少一個H已被D所取代。術語 「氘化類似物」係指其中一或多個可用氫已被氘取代之Ar to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, an condensed analog thereof, and a substituted derivative thereof; Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl 'alkoxy, thiol and a crosslinkable group, wherein adjacent R1 groups Can be combined to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of Η, D, and aglycon; a is the same at each occurrence or Different and are integers from 0 to 4; and η is an integer greater than 〇. The compound of formula I can be a small molecule, oligomer or polymer with η = =1. In certain embodiments, the compound is a polymer of Mn > 20,000, and in certain embodiments, the compound is a polymer of Mn > 50,000. In certain Formula I embodiments, η = 1 and R2 is a halogen. These compounds can be used as monomers for forming a polymerizable compound. In certain embodiments, the halogen is C1 or Br; in certain embodiments, the halogen is Br. In certain Formula I embodiments, n = 1 and R2 is Η or D. In certain embodiments, the compound of Formula I is via a paw. The term "deuterated" means that at least one H has been replaced by D. The term "deuterated analog" means that one or more of the available hydrogens have been replaced by deuterium.

S 26 201233662 化合物或基團的結構類似物。在一氘化化合物或氘化類 似物中,所存在的氘比天然豐度含量多出至少1〇〇倍。 在某些實施例中,該化合物係至少10〇/〇氘化。所謂的「% Jil化的」或A亂化」意謂氛核與質子加乱核之總和的 比率,其以百分比表示。▲某些實施例中,該化合物係 至少10%沉化,在某些實施例中,至少20%氛化;在某 些只施例中,至少30%亂化;在某些實施例中,至^ 40%氘化;在某些實施例中,至少5〇%氘化;在某些實 施例中,至少60%氘化·,在某些實施例中,至少7〇%氘 化;在某些實施例中,至少80%氘化;在某些實施例中^ 至少90%氣化;在某些實施例中,氣化。 氘化材料較不會被電洞、電子、激子或其組合給降 解氘化作用在裝置運作期間有潛力抑制化合物降解, =其可改善裝置壽命。-般而言’該改善不需要犧牲其 它裝,性質。另外,氛化化合物經常比非氛化類似物具 有更向的空氣穩定性(airt〇丨erance)。此可導致在製備及 ,化該材料,以及在使用該材料形成電子裝置的過程中 具有更大的製程容差。 在式1中,連結基[於兩個芳胺基之間的共軛現象 ^巾斷。在某些實施财,L·提供—線性度而使 如下所示之角度α大於109·5〇的四面角。S 26 201233662 Structural analogue of a compound or group. In a deuterated compound or deuterated analog, the rhodium present is at least 1 times more abundant than the natural abundance. In certain embodiments, the compound is at least 10〇/〇氘. The so-called "% Jilized" or "A chaotic" means the ratio of the sum of the nucleus and the proton plus the nucleus, expressed as a percentage. ▲ In certain embodiments, the compound is at least 10% precipitated, in some embodiments, at least 20% saturated; in some embodiments, at least 30% is disordered; in certain embodiments, To 40% deuteration; in some embodiments, at least 5% deuterated; in some embodiments, at least 60% deuterated, in some embodiments, at least 7 % deuterated; In certain embodiments, at least 80% is deuterated; in certain embodiments, at least 90% is vaporized; in certain embodiments, vaporized. Deuterated materials are less likely to be degraded by holes, electrons, excitons, or combinations thereof, and have the potential to inhibit compound degradation during device operation, which can improve device life. - Generally speaking, the improvement does not require sacrificing other equipment, nature. In addition, the occluded compound often has a more air stability than the non-inhibited analog. This can result in greater process tolerances in the preparation and characterization of the material, as well as in the use of the material to form an electronic device. In Formula 1, the linking group [the conjugation phenomenon between the two arylamine groups] is broken. In some implementations, L· provides linearity such that the angle α shown below is greater than the tetrahedral angle of 109·5〇.

27 201233662 在某些實施例中,α大於12〇。;在某些實施例中, 大於140。;在某些實施例中,大於16〇。。 螺基為一雙環有機化合物,其具有透過單一原子連 接的環。該等環之本質可為相同或不同。該連接原子被 稱為螺原子。在某些實施例中,螺原子係選自於由C及 Si所組成之群組。 在某些式I實施例中,具有L之化合物具有如下 不之核結構之'者27 201233662 In certain embodiments, a is greater than 12 〇. In some embodiments, greater than 140. In some embodiments, greater than 16 〇. . A spiro group is a bicyclic organic compound having a ring attached through a single atom. The nature of the rings may be the same or different. This connecting atom is called a spiro atom. In certain embodiments, the spiro atomic system is selected from the group consisting of C and Si. In certain embodiments of Formula I, the compound having L has the following non-nuclear structure

其中星號代表連接至芳胺基之氮原子的點,而R於每次 出現時係相同或不同且係Η或R1。 在某些式I實施例中,Ar1及Ar2為不具有稠合環 的芳基◊在某些實施例中,Ar1與Ar2具有式aWherein the asterisk represents the point of attachment to the nitrogen atom of the arylamine group, and R is the same or different and appears to be Η or R1 at each occurrence. In certain embodiments of Formula I, Ar1 and Ar2 are aryl oximes without a fused ring. In certain embodiments, Ar1 and Ar2 have the formula a.

S 28 201233662S 28 201233662

式a 其中: R1G在每次出現時係相同或不同且係選自於由D、 烧基、烧氧基、石夕氧烧及梦基所組成之群組; c在每次出現時係相同或不同且係〇-4之整數; d為0-5之整數;以及 m為1至5之整數。 在某些實施例中,Ar1與Ar2具有式bWherein: R1G is the same or different at each occurrence and is selected from the group consisting of D, alkyl, alkoxy, oxazepine and dream base; c is the same at each occurrence Or different and is an integer of 〇-4; d is an integer from 0 to 5; and m is an integer from 1 to 5. In certain embodiments, Ar1 and Ar2 have formula b

其中: R10在每次出現時係相同或不同且係選自於由D、 烷基、烷氧基、矽氧烷及矽基所組成之群組; c在每次出現時係相同或不同且係0-4之整數; d為0-5之整數;以及 m為1至5之整數。 在某些式a及b之實施例中,c及d之至少一者不 為0。在某些實施例中,m = 1 -3。 29 201233662 在某些式I實施例中,Ar1及Ar2係選自於由苯基、 聯苯、聯三苯、其氘化衍生物及其經取代衍生物所組成 之群組,該經取代衍生物具有選自於由烧基、烧氧基、 矽基及一具有一交聯基之取代基所組成之群組之一或 多個取代基。 在某些式I實施例中,3= 〇。 在某些式I實施例中,R1為D或C^o烷基。在某 些實施例中,該烷基係經氘化。在某些實施例中,a = 4 且 R1 = D。 在某些式I實施例中,可存在任一種下列組合:⑴ 氘化;(ii)角度α大於109.5°; (iii)L係選自於如上定義 之基團Wherein: R10 is the same or different at each occurrence and is selected from the group consisting of D, alkyl, alkoxy, decane, and decyl; c is the same or different at each occurrence and An integer from 0 to 4; d is an integer from 0 to 5; and m is an integer from 1 to 5. In some embodiments of formulas a and b, at least one of c and d is not zero. In some embodiments, m = 1 -3. 29 201233662 In certain embodiments of Formula I, Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, its deuterated derivatives, and substituted derivatives thereof, which are substituted The substance has one or more substituents selected from the group consisting of an alkyl group, an alkoxy group, a thiol group, and a substituent having a crosslinking group. In some Formula I embodiments, 3 = 〇. In certain embodiments of Formula I, R1 is D or C^o alkyl. In certain embodiments, the alkyl group is deuterated. In some embodiments, a = 4 and R1 = D. In certain embodiments of Formula I, any one of the following combinations may be present: (1) deuteration; (ii) angle α greater than 109.5°; (iii) L is selected from the group defined above.

(iv) Ar1及Ar2係選自於由苯基、聯苯、聯三苯、其氘化 衍生物、具有選自於由烧基、烧氧基、石夕基及一具有一(iv) Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, and deuterated derivatives thereof, and having a group selected from the group consisting of a pyridyl group, an alkoxy group, a ceramide group, and a

S 30 201233662 交聯基之取代基所組成之群組之一或多個取代基之衍 生物、具有式a之基團以及具有式b之基團所組成之群 組;(v) a = 0或a不為0且R1為D、Ci-io炫基或氘化 Cl.10院基。 在某些實施例中,具有式I之化合物進一步由式II 所定義S 30 201233662 A group consisting of one or more substituents of a group consisting of a substituent of a crosslinking group, a group having a group of formula a, and a group having a group of formula b; (v) a = 0 Or a is not 0 and R1 is D, Ci-io dad or deuterated Cl.10 yard. In certain embodiments, the compound of Formula I is further defined by Formula II

其中:among them:

Ar1與Ar2係相同或不同且為芳基; L係選自於由一螺基、一金剛烧基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; E於每次出現時係相同或不同^且係選自於由一單 鍵、C(R3)2、C(R4)2C(R4)2、Ο、Si(R3)2、Ge(R3)2 所組成之群組; R1於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰R1基團可結合在一起 以形成一芳族環; 201233662 R2於每次出現時係相同或不同,且係選自於由Η、 D及鹵素所組成之群組; R3於每次出現時係相同或不同,且係選自於由烷基 及芳基所組成之群組,其中相鄰R3基團可結合 在一起以形成一脂族環; R4於每次出現時係相同或不’同,且係選自於由Η、 D及烷基所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以 及 η為大於0的整數。 具有式II之化合物可為η=1之小分子、寡聚物或 聚合物。在某些實施例中,該化合物為Mn>20,000之聚 合物;在某些實施例中,該化合物為Mn >50,000之聚 合物。 在某些式Π實施例中,n=l且R2為鹵素。此等化 合物可作為用於形成聚合性化合物的單體。在某些實施 例中,鹵素為C1或Br ;在某些實施例中,鹵素為Br。 在某些式II實施例中,n=l且R2為Η或D。 在某些實施例中,具有式II之該化合物係經氘化。 在某些式II實施例中,L係選自如下所示之基團Ar1 and Ar2 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; Each occurrence is the same or different ^ and is selected from a single bond, C (R3) 2, C (R4) 2 C (R4) 2, Ο, Si (R3) 2, Ge (R3) 2 a group; R1 is the same or different at each occurrence, and is selected from the group consisting of D, F, an alkyl group, an aryl group, an alkoxy group, a thiol group, and a crosslinkable group. Wherein adjacent R1 groups may be joined together to form an aromatic ring; 201233662 R2 is the same or different at each occurrence and is selected from the group consisting of ruthenium, D and halogen; When present, the same or different, and selected from the group consisting of alkyl and aryl groups, wherein adjacent R3 groups can be joined together to form an aliphatic ring; R4 is the same at each occurrence or Not identical, and is selected from the group consisting of Η, D, and alkyl; a is the same or different at each occurrence and is an integer from 0-4; and η is an integer greater than zero. The compound of formula II can be a small molecule, oligomer or polymer of η = 1. In certain embodiments, the compound is a polymer of Mn >20,000; in certain embodiments, the compound is a polymer of Mn > 50,000. In certain embodiments, n = 1 and R2 is halogen. These compounds can be used as monomers for forming a polymerizable compound. In certain embodiments, the halogen is C1 or Br; in certain embodiments, the halogen is Br. In certain Formula II embodiments, n = 1 and R2 is deuterium or D. In certain embodiments, the compound of Formula II is deuterated. In certain embodiments of Formula II, L is selected from the group shown below.

S 32 201233662S 32 201233662

其中星號代表連接至芳胺基之氮原子的點,而R於每次 出現時係相同或不同且係Η或R1。 在某些式II實施例中,Ar1及Ar2為不具有稠合環 的芳基。在某些實施例中,Ari及Ar2具有如上定義之 式a或式b。在某些式&及b之實施例中,()及d之至 少一者不為〇。在某些實施例中,m = U。 在某些式11實施例中,Ar1及Ar2係選自於由苯基、 聯苯、聯二苯、丨氛化衍生物及其經取代衍生物所組成 之群組,該經取代衍生物具有選自於由烷基、烷氧基、 具有—交聯基之取代基所組成之群組之一或 多個取代基。 在某些式I實施例中,a == 〇。 此實實施例中,Rl4l^Cl·10燒基。在某 : 彳中’该燒基係經氛化。在某些實施例中,a = 4 33 201233662 在某些式II實施例中,E係選自於由C(R3)2及 C(R4)2C(R4)2所組成之群組。在某些實施例中,R3係選 自於由苯基、聯苯及氟烧基所組成之群組。在某些實施 例中,R4係選自於由Η及D所組成之群組。 在某些式II實施例中,可存在任一種下列組合:⑴ 氘化;(ii)角度α大於109.5。;(iii) L係選自於如上定義 之基團Wherein the asterisk represents the point of attachment to the nitrogen atom of the arylamine group, and R is the same or different and appears to be Η or R1 at each occurrence. In certain embodiments of Formula II, Ar1 and Ar2 are aryl groups having no fused ring. In certain embodiments, Ari and Ar2 have the formula a or formula b as defined above. In some embodiments of the formulas & b, at least one of () and d is not a defect. In some embodiments, m = U. In some embodiments of Formula 11, Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, biphenyl, an astringent derivative, and substituted derivatives thereof, the substituted derivative having One or more substituents selected from the group consisting of alkyl, alkoxy, and substituents having a crosslinking group. In some Formula I embodiments, a == 〇. In this embodiment, Rl4l^Cl·10 is burned. In a certain: 彳中' the burning base is scented. In certain embodiments, a = 4 33 201233662 In certain Formula II embodiments, the E is selected from the group consisting of C(R3)2 and C(R4)2C(R4)2. In certain embodiments, R3 is selected from the group consisting of phenyl, biphenyl, and fluoroalkyl. In certain embodiments, R4 is selected from the group consisting of hydrazine and D. In certain Formula II embodiments, any one of the following combinations may be present: (1) deuteration; (ii) angle a greater than 109.5. (iii) L is selected from the group defined above

(iv) Ar1及Ar2係選自於由苯基、聯苯、聯三苯、其氣化 衍生物、具有選自於由烷基、烷氧基、矽基及一具有一 交聯基之取代基所組成之群組之一或多個取代基之衍 生物、具有式a之基團以及具有式b之基團所組成之群 組;(v) a = 〇或a不為〇且Ri為d、Cmg烷基或氘化 Ci-io 烷基;(vi) E 係選自於由 C(R3)2 及 C(R4)2C(R4)2 所 組成之群組;(vii) R3係選自於由苯基、聯苯及氟烷基(iv) Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, a gasified derivative thereof, and having a substituent selected from an alkyl group, an alkoxy group, a fluorenyl group and a crosslinking group. a group consisting of one or more substituents of a group, a group having a formula a, and a group having a group of formula b; (v) a = 〇 or a is not 〇 and Ri is d, Cmg alkyl or deuterated Ci-io alkyl; (vi) E is selected from the group consisting of C(R3)2 and C(R4)2C(R4)2; (vii) R3 is selected From phenyl, biphenyl and fluoroalkyl

S 34 201233662 所組成之群組;(viii) R4係選自於由Η及D所組成之群 組。在某些實施例中,具有式I之化合物進一步由式III 所定義A group consisting of S 34 201233662; (viii) R4 is selected from the group consisting of Η and D. In certain embodiments, the compound of Formula I is further defined by Formula III

其中:among them:

Ar1與Ar2係相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、 其氘化類似物及其經取代衍生物所組成之群 組; R1於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組,其中相鄰R1基團可結合在一起 以形成一芳族環; R2於每次出現時係相同或不同,且係選自於由Η、 D及鹵素所組成之群組; R5於每次出現時係相同或不同,且係選自於由D、 F、烷基、芳基、烷氧基、矽基及一可交聯基團 所組成之群組; 35 201233662 R6至R9於每次出現時係相同或不同,且係選自於 由Η、D、F、烧基、芳基、烧氧基、梦基及一 可交聯基團所組成之群組,惟其前提是R6及 R7之至少一者為烷基或矽基,且R8及R9之至 少·一者為燒基或妙基; a在每次出現時係相同或不同且係0-4之整數。 b在每次出現時係相同或不同且係0-2之整數;以 η為大於0的整數。 具有式III之化合物可為η=1之小分子、寡聚物或 聚合物。在某些實施例中,該化合物為Mn>20,000之聚 合物;在某些實施例中,該化合物為Mn >50,000之聚 合物。 在某些式III實施例中,n=l且R2為卤素。此等化 合物可作為用於形成聚合性化合物的單體。在某些實施 例中,鹵素為C1或Br ;在某些實施例中,鹵素為Br。 在某些式III實施例中,n=l且R2為η或D。 在某些實施例中,具有式ΠΙ之該化合物係經氘化。 在某些式ΠΙ實施例中,L係選自如下所示之基團Ar1 is the same as or different from Ar2 and is an aryl group; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is Each occurrence is the same or different and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group, wherein adjacent R1 groups May be combined to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of ruthenium, D and halogen; R5 is the same or different at each occurrence, And selected from the group consisting of D, F, alkyl, aryl, alkoxy, fluorenyl and a crosslinkable group; 35 201233662 R6 to R9 are the same or different at each occurrence, And is selected from the group consisting of ruthenium, D, F, alkyl, aryl, alkoxy, dream base and a crosslinkable group, provided that at least one of R6 and R7 is an alkyl group Or a fluorenyl group, and at least one of R8 and R9 is a burnt group or a wonderful base; a is the same or different at each occurrence and is an integer of 0-4. b is the same or different at each occurrence and is an integer from 0 to 2; η is an integer greater than zero. The compound of formula III can be a small molecule, oligomer or polymer of η = 1. In certain embodiments, the compound is a polymer of Mn >20,000; in certain embodiments, the compound is a polymer of Mn > 50,000. In certain embodiments of Formula III, n = 1 and R2 is a halogen. These compounds can be used as monomers for forming a polymerizable compound. In certain embodiments, the halogen is C1 or Br; in certain embodiments, the halogen is Br. In certain Formula III embodiments, n = 1 and R2 is η or D. In certain embodiments, the compound having the formula is deuterated. In certain embodiments, the L is selected from the group shown below.

S 36 201233662 f?4S 36 201233662 f?4

其中星號代表連接至芳胺基之氮原子的點,而R於每次 出現時係相同或不同且係Η或R1。 在某些式III實施例中,Ar1及Ar2為不具有稠合環 的芳基。在某些實施例中,Ar1及Ar2具有如上定義之 式a或式be在某些式a及b之實施例中,c及d之至 少一者不為0。在某些實施例中,m = 1-3。 在某些式III實施例中,Ar1及Ar2係選自於由苯 基、聯苯、聯三苯、其氘化衍生物及其經取代衍生物所 組成之群組,該經取代衍生物具有選自於由烷基、烷氧 基、矽基及一具有一交聯基之取代基所組成之群組之一 或多個取代基。 在某些式III實施例中,所有的a= 0。 在某些式III實施例中,a不為0且R1為D或Cuh) 烷基。在某些實施例中,該烷基係經氘化。在某些實施 例中’所有的a = 4且R1 = D。 在某些式III實施例中,所有的b = 0。 在某些式III實施例中,b不為0且R2為D或CM0 烷基。在某些實施例中,該烷基係經氘化。在某些實施 例中,所有的b = 2且R2 = D。 在某些式III實施例中,R6 = R8=烷基或氘化烷基。 在某些實施例中,R7 = R9=烷基或氘化烷基。 37 201233662 在某些式III實施例中’可存在任一種下列組合: (1)氛化;(ii)角度α大於109.5。;(iii) L係選自於如上定 義之基團Wherein the asterisk represents the point of attachment to the nitrogen atom of the arylamine group, and R is the same or different and appears to be Η or R1 at each occurrence. In certain embodiments of Formula III, Ar1 and Ar2 are aryl groups having no fused ring. In certain embodiments, Ar1 and Ar2 have the formula a or formulae as defined above. In some embodiments of formulas a and b, at least one of c and d is not zero. In certain embodiments, m = 1-3. In certain embodiments of Formula III, Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, a deuterated derivative thereof, and substituted derivatives thereof, the substituted derivative having One or more substituents selected from the group consisting of an alkyl group, an alkoxy group, a fluorenyl group, and a substituent having a crosslinking group. In some Formula III embodiments, all a = 0. In certain embodiments of Formula III, a is not 0 and R1 is D or Cuh) alkyl. In certain embodiments, the alkyl group is deuterated. In some embodiments 'all a = 4 and R1 = D. In some Formula III embodiments, all b = 0. In certain embodiments of Formula III, b is not 0 and R2 is D or CM0 alkyl. In certain embodiments, the alkyl group is deuterated. In some embodiments, all b = 2 and R2 = D. In certain embodiments of Formula III, R6 = R8 = alkyl or alkylated alkyl. In certain embodiments, R7 = R9 = alkyl or deuterated alkyl. 37 201233662 In some Formula III embodiments, any of the following combinations may be present: (1) scented; (ii) angle α is greater than 109.5. (iii) L is selected from the group defined above.

(iv) Ar1及Ar2係選自於由苯基、聯苯、聯三苯、其氘化 衍生物、具有選自於由烷基、烷氧基、矽基及一具有一 交聯基之取代基所組成之群組之一或多個取代基之衍 生物、具有式a之基團以及具有式b之基團所組成之群 組;(v) a = 0或a不為0且R1為D、Cwo院基或氛化 Ci-i〇烧基;(vi) b = 0或b不為0且R2為D、Ci-κ)燒基 或氘化C^o烷基;(vii) R6 = R8 =烷基或氘化烷基;(viii) r7 = r9=烷基或氘化烷基。 具有式I之化合物的某些非限制性實例如下所示(iv) Ar1 and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, a deuterated derivative thereof, and having a substituent selected from an alkyl group, an alkoxy group, a fluorenyl group and a crosslinking group. a group consisting of one or more substituents of a group, a group having a formula a, and a group having a group of formula b; (v) a = 0 or a is not 0 and R1 is D, Cwo, or cystized Ci-i oxime; (vi) b = 0 or b is not 0 and R2 is D, Ci-κ) alkyl or deuterated C^o alkyl; (vii) R6 = R8 = alkyl or deuterated alkyl; (viii) r7 = r9 = alkyl or deuterated alkyl. Some non-limiting examples of compounds having Formula I are shown below

化合物ACompound A

S 38 2〇1233662S 38 2〇1233662

201233662201233662

化合物DCompound D

災用饮Ml座生c_c或(:七鍵 新穎化合物。已熟知各種不同的此類技術如Suz二、 Ya,a,o^ ,物可利用氘化之前驅物材料以類似方式 笑* 用爪化之溶劑(例如队 tit ί D交換催化劑(例如三氣㈣或二氣 例二々子在下處理非氛化之化合物而進行製備。於實 例中說明示範性製備過程。 耳 y彻雜處理技術將化合物形成為層。術語「層」 臈」交換使用,其指一覆蓋一所欲區域之塗層。 語=受尺寸限制。該區域可與一整個裝置一樣大或 特定功能區域(例如,實際視覺顯示)一樣小,或 者,一單次像素一樣小。可藉由任何習知沈積技術,包 括氣相沈積、液相沈積(連續及不連續技術)及熱傳遞, 形成層及膜。連續沈積技術包括但不限於旋轉塗布、凹 版塗布、簾式塗布、浸潰塗布、狹縫模具式塗布、喷灑. 201233662 塗布與連續喷嘴塗布。不連續的沈積技術包括但不限於 喷墨印刷、凹版印刷及網版印刷。 4.有機電子裝置 進一步針對該方法於一電子裝置中的應用,說明該 方法’但是其並未侷限在此類應用中。 圖2係一例示性電子裝置,其為一有機發光二極體 (OLED)顯示器,包括至少兩個有機活性層設於兩個電 接觸層之間。該電子裝置1〇〇包含一或多個層12〇及 130 ’以促進電洞從陽極層110注入到發射層140。一般 而言,當存在兩個層時,鄰近該陽極的層12〇稱為電洞 注入層,有時稱為緩衝層。在發射層旁邊的層130係稱 作電洞傳輸層。一選擇性的電子傳輸層15〇位在該發射 層140與一陰極層16〇之間。該等有機層12〇至15〇個 別且總稱為該裝置的有機活性層。取決於裝置刚的應 用’該發射層14G可為-由外施電壓啟動的發光層(例 如m極财或發光學電池巾),或為-在^有或不具有-外施驗下,可對鋪能量回應及產 生信號之材料層(例如,在一光偵測器中)。該裝置在系 統、驅動方法及功能模式上並無限制。在此圖中未表示 出該底涂屉。 H多彩裝置而言,該發射層咐係由至少三個不 成。可藉由印刷個別的有色區域而 以具有不同顏色之發射材料摻成 201233662 成。已於例如在已公開美國專利申請案第2004-0094768 说中所描述之方法。 在某些實施例中,本文所述之新方法可使用於該裝 置中之任何一對連續有機層,其中該第二層係被包含在 一特定區域内。用於製造一有機電子裝置(包括一電 極’該電極具有設在其上之一第一有機活性層及一第二 有機活性層)之方法包括: 在該電極上形成具有一第一表面能之第一有機活‘ 性層; 以一底塗材料處理該第一有機活性層以形成一底 塗層; 以圖案化方式使該底塗層曝露於輻射,產生曝露區 域和未曝露區域; 顯影該底塗層以自該等未曝露區域有效移除該底 塗層,產生一具有一底塗層圖案之第一活性有機層,其 中該底塗層圖案具有一第二表面能,且該第二表面能大 於該第一表面能; 於該第一有機活性層上的該底塗層圖案上進行液 相沉積以形成該第二有機活性層; 其中該底塗材料具有式I ,如上所述。 於此新穎方法之一實施例中,該第二有機活性層為 發射層140,且該第一有機活性層為在層14〇之前即施 用之裝置層。在許多情形中,該裝置之建構係始於該陽 極層。若存在電洞傳輸層130,則可在施用發射層14〇 之前將底塗層施用至層130並顯影。若不存在層13〇, 則可將底塗層施用至層120。在裝置之建構係始曰於該陰The disaster-using drink Ml is c_c or (: seven-button novel compound. It is well known that various such technologies such as Suz II, Ya, a, o^, can be used in a similar way to laugh with the precursor material. The solvent (for example, the team tit ί D exchange catalyst (for example, three gas (four) or two gas two dice is prepared by treating the non-inflated compound under the treatment. The exemplary preparation process is illustrated in the example. The compound is formed into a layer. The term "layer" is used interchangeably to refer to a coating that covers a desired area. Language = limited by size. This area can be as large as a whole device or a specific functional area (eg, actual vision) Displayed as small, or as small as a single sub-pixel. Layers and films can be formed by any conventional deposition technique, including vapor deposition, liquid deposition (continuous and discontinuous techniques), and heat transfer. Including but not limited to spin coating, gravure coating, curtain coating, dip coating, slot die coating, spraying. 201233662 Coating and continuous nozzle coating. Discontinuous deposition techniques include, but are not limited to, spraying Ink printing, gravure printing and screen printing 4. Organic electronic devices further illustrate the method of the method in an electronic device, but the method is not limited to such applications. Figure 2 is an exemplary electronic device , which is an organic light emitting diode (OLED) display, comprising at least two organic active layers disposed between two electrical contact layers. The electronic device 1 〇〇 includes one or more layers 12 〇 and 130 ′ to facilitate A hole is injected from the anode layer 110 to the emissive layer 140. In general, when two layers are present, the layer 12 adjacent to the anode is referred to as a hole injection layer, sometimes referred to as a buffer layer. Layers beside the emissive layer 130 is referred to as a hole transport layer. A selective electron transport layer 15 is sandwiched between the emissive layer 140 and a cathode layer 16A. The organic layers 12 to 15 are individually and collectively referred to as organic devices. The active layer. Depending on the application of the device, the emissive layer 14G may be a light-emitting layer (for example, a m-rich or illuminating battery cell) activated by an applied voltage, or - with or without Underneath, a material layer that responds to the energy and generates a signal (For example, in a photodetector.) The device is not limited in terms of system, driving method and functional mode. The primer tray is not shown in the figure. For the colorful device, the emission layer is The method described in the U.S. Patent Application Serial No. 2004-0094768, the disclosure of which is incorporated herein by reference. In some embodiments, the novel methods described herein can be used with any pair of continuous organic layers in the device, wherein the second layer is contained within a particular region. For use in fabricating an organic electronic device (including an electrode) The method of the electrode having a first organic active layer and a second organic active layer disposed thereon includes: forming a first organic active layer having a first surface energy on the electrode; Treating the first organic active layer with a coating material to form an undercoat layer; exposing the undercoat layer to radiation in a patterned manner to produce an exposed area and an unexposed area; developing the undercoat layer from the unexposed The region effectively removes the undercoat layer to produce a first active organic layer having an undercoating pattern, wherein the undercoating pattern has a second surface energy, and the second surface energy is greater than the first surface energy; Liquid-depositing is performed on the undercoat layer pattern on the first organic active layer to form the second organic active layer; wherein the undercoat material has Formula I, as described above. In one embodiment of the novel method, the second organic active layer is an emissive layer 140, and the first organic active layer is a device layer applied prior to layer 14〇. In many cases, the construction of the device begins with the anode layer. If the hole transport layer 130 is present, the undercoat layer can be applied to the layer 130 and developed prior to application of the emissive layer 14". If layer 13 is absent, the undercoat layer can be applied to layer 120. The construction of the device begins with the yin

S 201233662 極的情形中’可於施用發射層140之前將底塗層施用至 電子傳輸層150。 於此新穎方法之一實施例中,該第一有機活性層為 電洞注入層120,且該第二有機活性層為電洞傳輸層 130在裝置之建構係始於該陽極層的實施例中,可於 施用電洞傳輸層130之前將底塗層施用至電洞注入層 120並顯影。在一實施例中,該電洞注入層包括一氟化 材料。在一實施例中,該電洞注入層包括一摻雜氟化酸 聚合物的導電聚合物。在一實施例中,該電洞注入層主 要係由一摻雜氟化酸聚合物的導電聚合物組成。在某些 實施例中,該底塗層主要係由電洞傳輸材料組成。在一 實施例中,該底塗層主要係由與該電洞傳輸層相同的電 洞傳輪材料組成。 裝置中的層可利用任一種已知可用於該層之材料 成°該裝置可包含可鄰近於該陽極層11()或該陰極 陽極的一支撐件或基板(未顯示)。該支撐件鄰近該 的,層110為最常見者。該支撐件可為撓性的或剛性 機有機的或無機的。一般而言,可使用玻璃或撓性有 效率、支為支揮件。該陽極層110係比陰極層160更有 人金'入電洞的一電極。該陽極可包括含有一金屬、混 的 f、合金、金屬氧化物或混合氧化物的材料。合適 混人二包括第2族元素(即’ Be、Mg、Ca、Sr、Ba) 氣化物、第u族元素 族中的元素、 中的元素、笛< ^ 元素。=弟6族中的元素及第8族至第1〇族的過渡 第居該陽極層110係透光的,則可使用第12族、 族及第14族元素的混合氧化物,如氧化銦錫。本 43 201233662 文所使用之術語「混合氧化物」係指具有兩或多個不同 陽離子的氧化物’其係選自第2族it素或第12族、第 13族或第14族元素。用於陽極層11〇之材料的非限制 性特定實例,包括但不侷限於,氧化銦錫(订〇)、氧化 鋁錫、氧化鋁鋅、金、銀、銅及鎳。該陽極亦可包括一 有機材料,如聚苯胺、聚嗟吩或聚吨洛。 可藉由化學氣相沉積法或物理氣相沉積法、或旋模 法形成該陽極層110。化學氣相沉積可如下列方式執 行.電漿增強化學氣相沉積(PECVD)或金屬有機化學氣 相沉積(MOCVD)。物理氣相沉積可包括所有形式的喷 鍍,包括離子束喷鍍、電子束(e_beam)蒸鍍及電阻蒸鍍。 特疋形式的物理氣相沉積包括射頻(RF)磁控濺鍍及感 應耦合電漿物理氣相沉積(IMP_PVD) ^上述該等沉積技 術在半導體製造技藝領域中已廣為人知。 通常,該陽極層110於一微影光刻(丨ith〇graphic)操 作期間進行圖案化。該圖案可根據需求改變。可藉由, 例如,在第一撓性複合障壁結構上塗敷第一電接觸層材 料之前先行放置一圖案化光罩或光阻而形成該等圖案 層。或者係,該等層可塗敷成一整體層(亦稱為毯式沉 積)’隨後使用例如一圖案化光阻層及濕式化學或乾式 化學蝕刻技術進行圖案化。亦可使用本技藝中已廣為人 知的其它圖案化方法。當該等電子裝置係設置在一陣列 中時,該陽極層110 —般係形成在實質平行的條狀物 (strip)中,該等平行條狀物具有在實質上相同方向中延 伸的長度。 201233662 電洞注入層120係用以促進電洞注入發射層並平 面化該陽極表面以防止裝置短路。電洞注入材料可為聚 合物、寡聚物或小分子,且可以是溶液、分散液、懸浮 液、乳化液、膠體混合物或其他組成物的型態。 該電洞注入層可用聚合材料如聚苯胺(PANI)或聚 伸乙二氧噻吩(PEDOT)加以形成,該等聚合材料經常摻 雜以質子酸。該等質子酸可以是如聚苯乙烯磺酸 (poly(styrenesulfonic acid))、聚(2-丙烯醯胺-2-甲基-1-丙磺酸)(poly(2-acrylamido-2-methyl-l-propanesulf〇nic acid))及類似者。該電洞注入層12〇可包括電荷傳輸化 合物及類似者’如銅敵青(copper phthalocyanine)與四嗟 富瓦烯-四氟四氰基苯醌二甲烧 (tetrathiafulvalene-tetracyanoquinodimethane , TTF-TCNQ)。在一實施例中,該電洞注入層12〇係含有 一導電聚合物及一膠體形成聚合酸構成之分散液製 成。已於例如在已公開之美國專利申請案第 2004/0102577 號、第 2004/0127637 號、第 2005/0205860 號和已公開之PCT申請案WO 2009/018009中描述此種 材料。 可藉由任何沉積技術塗敷該電洞注入層120。如上 所述,在一實施例中,藉由一溶液沉積方法塗敷該電洞 注入層。在一實施例中,藉由一連續溶液沉積方法塗敷 該電洞注入層。 層130包括電洞傳輸材料。用於電洞傳輸層的電洞 傳輸材料實例已彙整於例如Kirk-Othmer Encyclopedia of Chemical Technology,第四版,第 18 卷,第 837 至 45 201233662 860頁,1996,Y. Wang。電洞傳遞小分子與聚合物兩者 皆可使用。一般常用的電洞傳輸分子包括但不限於: 4,4,,4,’-三(1^,:^-二苯胺)-三苯胺(丁0八丁八);4,4,,4,,-三 (N-3-甲基苯-N-苯胺)-三苯胺(MTDATA) ; N,N,二苯基 -N,N,·雙(3-曱基苯)-[1,1,-聯苯基]_4,4,·二胺(TPD) ; 4,4,· 雙(叶唑-9-基)聯苯(CBP) ; 1,3-雙(味唑-9-基)苯如⑶); U-雙[(二-4-曱苯胺基)苯基]環己烷(TAPC) ; Ν,Ν,-雙(4-曱基苯)-Ν,Ν’-雙(4_乙基苯)-[1,Γ-(3,3·-二甲基)聯苯 基]-4,4’-二胺(ETPD);四-(3-甲基苯)-N,N,N,,N,-2,5j: 胺(PDA) ; α-苯基-4-N,N-二苯胺苯乙婦(TPS);對(二乙 胺)苯甲醛二苯腙(DEH);三苯胺(TPA);雙[4-(N,N-二乙 胺)-2-甲基苯](4·甲基苯)甲烷(MPMP); 1-苯基-3·[對-(二 乙胺)苯乙婦基]-5-[對-(二乙胺)苯基]Π比唾琳(ppR或 DEASP) ; 1,2-反式雙(9H-咔唑-9-基)環丁烷(DCZB); N,N,N',N’-四(4-甲基苯)-(1,1,-聯苯)·4,4,-二胺 (N,N ,N',N'-tetrakis(4-methylphenyl)-( 1,1 '-biphenyl)-4,4'-diamine, TTB); N,N,-雙(萘-1-基)-N,N’-雙·(苯基)聯苯胺 (Ν,Ν -bis(naphthalen-1 -yl)-N,N5-bis-(phenyl)benzidine, α-ΝΡΒ);以及紫質(p〇rphyrinic)化合物如醜青銅。一般 常用的電洞傳輸聚合物包括但不限於,聚乙烯咔唑、(苯 基甲基)聚矽烷、聚(二氧噻吩)、聚苯胺及聚吡咯。藉由 將像上述那些的電洞傳輸分子摻雜至像聚苯乙烯及聚 碳酸酯之聚合物中,亦可能獲得電洞傳輸聚合物。 在某些實施例中,該電洞傳輸層包括一電洞傳輸聚 合物。在某些實施例中,該電洞傳輸層係實質上由一電 洞傳輸聚合物所組成。在某些實施例中,該電洞傳輸聚In the case of S 201233662, the undercoat layer may be applied to the electron transport layer 150 before the emissive layer 140 is applied. In one embodiment of the novel method, the first organic active layer is a hole injection layer 120, and the second organic active layer is a hole transport layer 130. In the embodiment in which the device is constructed from the anode layer, The undercoat layer may be applied to the hole injection layer 120 and developed before the hole transport layer 130 is applied. In one embodiment, the hole injection layer comprises a fluorinated material. In one embodiment, the hole injection layer comprises a conductive polymer doped with a fluorinated acid polymer. In one embodiment, the hole injection layer is primarily comprised of a conductive polymer doped with a fluorinated acid polymer. In some embodiments, the undercoat layer is primarily comprised of a hole transport material. In one embodiment, the undercoat layer consists essentially of the same hole transport material as the hole transport layer. The layer in the device can utilize any of the materials known to be useful for the layer. The device can include a support or substrate (not shown) that can be adjacent to the anode layer 11 (or the cathode anode). The support member is adjacent to the layer 110, which is the most common. The support can be flexible or rigid organic or inorganic. In general, glass or flexibility can be used to efficiently support the support. The anode layer 110 is more electrode-positive than the cathode layer 160. The anode may comprise a material comprising a metal, a mixed f, an alloy, a metal oxide or a mixed oxide. Suitable mixed two includes a Group 2 element (i.e., ' Be, Mg, Ca, Sr, Ba) vapor, an element in the Group u element group, an element in the group, and a flute < ^ element. If the element in the group 6 and the transition from the group 8 to the first group are light-transmissive, the mixed oxide of the group 12, group and group 14 elements, such as indium oxide, may be used. tin. The term "mixed oxide" as used herein refers to an oxide having two or more different cations which is selected from a Group 2 or a Group 12, Group 13, or Group 14. Non-limiting specific examples of materials for the anode layer 11 include, but are not limited to, indium tin oxide (sodium), aluminum tin oxide, aluminum zinc oxide, gold, silver, copper, and nickel. The anode may also comprise an organic material such as polyaniline, polybenzazole or polytonol. The anode layer 110 can be formed by chemical vapor deposition or physical vapor deposition, or by spin molding. Chemical vapor deposition can be performed as follows: plasma enhanced chemical vapor deposition (PECVD) or metal organic chemical vapor deposition (MOCVD). Physical vapor deposition can include all forms of sputtering, including ion beam sputtering, electron beam (e_beam) evaporation, and resistance evaporation. Special forms of physical vapor deposition include radio frequency (RF) magnetron sputtering and inductively coupled plasma physical vapor deposition (IMP_PVD). These deposition techniques are well known in the art of semiconductor fabrication. Typically, the anode layer 110 is patterned during a lithography operation. The pattern can be changed as needed. The pattern layer can be formed by, for example, placing a patterned mask or photoresist prior to applying the first electrical contact layer material over the first flexible composite barrier structure. Alternatively, the layers can be applied as a unitary layer (also known as blanket deposition) followed by patterning using, for example, a patterned photoresist layer and wet chemical or dry chemical etching techniques. Other patterning methods well known in the art can also be used. When the electronic devices are disposed in an array, the anode layer 110 is typically formed in substantially parallel strips having lengths that extend in substantially the same direction. 201233662 The hole injection layer 120 is used to facilitate the injection of holes into the emissive layer and planarize the surface of the anode to prevent shorting of the device. The hole injecting material may be a polymer, an oligomer or a small molecule, and may be in the form of a solution, a dispersion, a suspension, an emulsion, a colloidal mixture or other composition. The hole injection layer may be formed of a polymeric material such as polyaniline (PANI) or polyethylene oxydioxide (PEDOT), which is often doped with a protonic acid. The protic acids may be, for example, poly(styrenesulfonic acid), poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (poly(2-acrylamido-2-methyl-). L-propanesulf〇nic acid)) and the like. The hole injection layer 12A may include a charge transport compound and the like 'copper phthalocyanine and tetrathiafulvalene-tetracyanoquinodimethane (TFF-TCNQ) . In one embodiment, the hole injection layer 12 is made of a conductive polymer and a colloid to form a dispersion of a polymeric acid. Such materials are described in, for example, the published U.S. Patent Application Serial Nos. 2004/0102577, 2004/0127637, 2005/0205860, and PCT Application WO 2009/018009. The hole injection layer 120 can be applied by any deposition technique. As described above, in one embodiment, the hole injection layer is applied by a solution deposition method. In one embodiment, the hole injection layer is applied by a continuous solution deposition process. Layer 130 includes a hole transport material. Examples of hole transport materials for the hole transport layer have been incorporated, for example, in Kirk-Othmer Encyclopedia of Chemical Technology, Fourth Edition, Volume 18, pages 837 to 45 201233662, page 860, 1996, Y. Wang. The hole can be used to transfer both small molecules and polymers. Commonly used hole transport molecules include, but are not limited to: 4, 4, 4, '-three (1^, :^-diphenylamine)-triphenylamine (but 0 octet 8); 4, 4, 4, -Tris(N-3-methylbenzene-N-aniline)-triphenylamine (MTDATA); N,N,diphenyl-N,N,·bis(3-mercaptobenzene)-[1,1,- Biphenyl]_4,4,diamine (TPD); 4,4,·bis(pyrazol-9-yl)biphenyl (CBP); 1,3-bis(isoxyl-9-yl)benzene (3)); U-bis[(di-4-indolyl)phenyl]cyclohexane (TAPC); Ν, Ν, - bis(4-mercaptobenzene)-Ν, Ν'-double (4_B Benzo)-[1,Γ-(3,3·-dimethyl)biphenyl]-4,4'-diamine (ETPD); tetra-(3-methylphenyl)-N,N,N ,,N,-2,5j: amine (PDA); α-phenyl-4-N,N-diphenylamine benzene (TPS); p-(diethylamine) benzaldehyde diphenyl hydrazine (DEH); Aniline (TPA); bis[4-(N,N-diethylamine)-2-methylbenzene](4.methylphenyl)methane (MPMP); 1-phenyl-3·[p--(2-B Amine) phenethyl]-5-[p-(diethylamine)phenyl]pyrene than salicin (ppR or DEASP); 1,2-trans bis(9H-carbazol-9-yl)cyclobutane Alkane (DCZB); N,N,N',N'-tetrakis(4-methylphenyl)-(1,1,-biphenyl)·4,4,-diamine (N,N,N',N '-tetrakis(4-me Thylphenyl)-( 1,1 '-biphenyl)-4,4'-diamine, TTB); N,N,-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine ( Ν, Ν-bis(naphthalen-1 -yl)-N, N5-bis-(phenyl)benzidine, α-ΝΡΒ); and p〇rphyrinic compounds such as ugly bronze. Commonly used hole transport polymers include, but are not limited to, polyvinyl carbazole, (phenylmethyl) polydecane, poly(dioxythiophene), polyaniline, and polypyrrole. It is also possible to obtain a hole transporting polymer by doping a hole transporting molecule such as those described above into a polymer such as polystyrene and polycarbonate. In some embodiments, the hole transport layer comprises a hole transporting polymer. In some embodiments, the hole transport layer consists essentially of a hole transport polymer. In some embodiments, the hole transmission gathers

S 46 201233662 合物係一二苯乙烯基芳基(distyrylaryl)化合物。在某些 實施例中,务基基團具有兩或多個芳族揭環。在某些實 施例中,該芳基基團係一多并苯(acene)。本文所使用之 術语「多并苯」係指烴基的母成分含有兩或多個摩位苯 稠環(ortho-fused benzene ring)出現在一直鏈線形配置 中。 在某些實施例中,該電洞傳輸聚合物係一芳胺聚合 物。在某些實施例中,其為第和芳胺單體的一共聚合物。 在某些實施例中,該聚合物具有可交聯的基團。在 某些實施例中,可藉由一加熱處理及/或曝露於紫外光 或可見光輻射達成交聯作用。可交聯基團之實例包括但 不限於乙稀基、丙缔酸酯、全氟乙烯基喊、1_苯并 環丁烷、矽氧烷及曱基酯類。可交聯聚合物在溶液製程 OLEDs的製備上有優點。應用可溶性聚合材料於形成 一可在沉積之後轉變成不可溶薄膜之層,可使製造經多 層溶液處理之有機發光二極體裝置時,免於出現層溶解 的問題。 可交聯之聚合物的實例可見於如已公開之美國專 利申請案第2005-0184287號與已公開之pCT申請案 W0 2005/052027。 ^ 在某些實施例中.,該電洞傳輸層包括一聚合物,其 係 9,9-二炫基第(9,9-dialkylfluorene)和三苯 ^ (triphenylamine)的一共聚合物。在某些實施例中,電洞 傳輸層係實質上由一聚合物所組成,且其係9,9-二燒夷 苐及三苯胺之共聚物。在某些實施例中,該聚合物& 9,9·二烷基薙(9,9-dialkylfluorene)和 4,4’-二(二苯胺)聯 201233662 苯(4,4’-bis(diphenylamino)biphenyl)的一共聚合物。在某 些實施例中,該聚合物係9,9-二烷基薙和TPB的一共聚 合物。在某些實施例中,該聚合物係9,9_二貌基第和 NPB的一共聚合物。在某些實施例中,該共聚合物係從 一第三共聚單體製成’該第三共聚單體係選自於(乙烯 本基)一本胺及9,9-一本乙婦基第或9,9-雙(乙稀节基) 第。在某些實施例中,該電洞傳輸層包括一材料,該材 料包含二芳胺,該二芳胺具有銜接在一非平面組態中的 共輛部分(conjugated moieties)。此種材料可為單體或聚 合的。例如已公開PCT申請案第w〇 2009/067419號中 已記載此種材料的實例。 在某些實施例中,該電洞傳輸層係摻雜有p型摻雜 劑(p-dopant),如四氟四氟四氰基苯醌二甲烷 (tetrafluorotetracyanoquinodimethane)和茈-3,4,9,10-四 羧 -3,4,9,l〇- 二 針 (perylene-354,9,10-tetracarboxylic.3,4,9,10.(lianhydride)〇 在某些實施例中,該電洞傳輸層包括一具有式工之 材料,如上所述。在某些實施例中,該電洞傳輸層實質 上係由一具有式I之材料所組成。 可藉由任何沉積技術塗敷該電洞傳輸層13〇。如上 所述,在一實施例中,藉由一溶液沉積方法塗敷該電洞 傳輸層。在一實施例中,藉由一連續溶液沉積方法塗敷 該電洞傳輸層。 取決於裝置的應用,該發射層140可為一由外施電 壓啟動的發光層(例如,在一發光二極體中或發光電化 學電池中)’或為一在具有或不具有一外施偏壓下,對S 46 201233662 The compound is a distyryl aryl compound. In certain embodiments, the group has two or more aromatic rings. In certain embodiments, the aryl group is a polyacene. The term "polyacene" as used herein means that the parent component of the hydrocarbon group contains two or more ortho-fused benzene rings present in a straight chain configuration. In certain embodiments, the hole transporting polymer is an aromatic amine polymer. In certain embodiments, it is a co-polymer of a first and an arylamine monomer. In certain embodiments, the polymer has a crosslinkable group. In some embodiments, the crosslinking can be effected by a heat treatment and/or exposure to ultraviolet or visible radiation. Examples of crosslinkable groups include, but are not limited to, ethylene, propionate, perfluorovinyl, 1 -benzocyclobutane, decane, and decyl esters. Crosslinkable polymers have advantages in the preparation of solution process OLEDs. The use of a soluble polymeric material to form a layer which can be converted to an insoluble film after deposition allows for the problem of layer dissolution to occur when fabricating a multi-layer solution treated organic light-emitting diode device. Examples of crosslinkable polymers can be found in U.S. Patent Application Serial No. 2005-0184287, the disclosure of which is hereby incorporated by reference. ^ In certain embodiments, the hole transport layer comprises a polymer which is a co-polymer of 9,9-dialkylfluorene and triphenylamine. In certain embodiments, the hole transport layer consists essentially of a polymer and is a copolymer of 9,9-dione and triphenylamine. In certain embodiments, the polymer & 9,9·dialkylfluorene and 4,4'-di(diphenylamine) are combined with 201233662 benzene (4,4'-bis(diphenylamino) a common polymer of biphenyl). In certain embodiments, the polymer is a copolymer of 9,9-dialkylfluorene and TPB. In certain embodiments, the polymer is a co-polymer of 9,9-dimorphyl and NPB. In certain embodiments, the copolymer is made from a third comonomer. The third copolymer system is selected from the group consisting of (ethylene-based) amines and 9,9-one daughters. The first or 9,9-double (Ethylene base). In certain embodiments, the hole transport layer comprises a material comprising a diarylamine having conjugated moieties that are coupled in a non-planar configuration. Such materials can be monomeric or polymeric. Examples of such materials are described in, for example, PCT Application No. WO 2009/067419. In some embodiments, the hole transport layer is doped with a p-dopant such as tetrafluorotetracyanoquinodimethane and xenon-3, 4, 9 , 10-tetracarboxy-3,4,9,l〇-two needles (perylene-354,9,10-tetracarboxylic.3,4,9,10. (lianhydride) 〇 In some embodiments, the hole The transport layer comprises a material having a workmanship, as described above. In some embodiments, the hole transport layer consists essentially of a material having Formula I. The hole can be coated by any deposition technique. The transport layer 13 is as described above. In one embodiment, the hole transport layer is applied by a solution deposition method. In one embodiment, the hole transport layer is applied by a continuous solution deposition method. Depending on the application of the device, the emissive layer 140 can be a light-emitting layer (for example, in a light-emitting diode or in a light-emitting electrochemical cell) activated by an applied voltage, or one with or without an external application. Under bias, right

S 48 201233662 輻射能量有回應及產生信號之材料層(例如,在一光伯 測器中)。在一實施例中,發射材料為一有機電致發光 (“EL”)材料。任何有機電致發光材料皆可使用在該等裝 置中’該等有機電致發光材料包括但不侷限於,小型分 子有機螢光化合物、螢光與磷光金屬錯合物、共輛聚合 物和它們的混合物。螢光化合物之實例包括但不侷限於 【#+快】(chrysenes)、芘(pyrenes)、茈(perylenes)、紅 螢烯(rubrenes)、香豆素(coumarins)、蒽(anthracenes)、 噻二唑(thiadiazoles)、上述物質之衍生物及上述物質之 混合物。金屬錯合物之實例包括但不限於金屬鉗合類号 辛化合物(metalchelated oxinoidcompounds),例如,三(8-羥基喹啉)紹(tris(8-hydroxyquinolato)aluminuin,Alq3); %金屬化錶與銘電發光化合物(cyclometalated iridium and platinum electroluminescent compounds),例如,像 Petrov等人所發明之美國專利第6,670,645號和PCT申 請案公開第WO03/063555及W02004/016710號所揭露 之銥與苯°比咬(phenylpyridine)、苯嗟琳(phenylquinoline) 或苯濟咬配位基(phenylpyrimidine ligands)之錯合物以 及例如在PCT申請案公開第W003/008424、 W003/091688及W003/040257號所述之有機金屬錯合 物以及上述物質之混合物。在某些情況中,該小分子螢 光或有機金屬材料係沉積作為主材料中之摻雜劑,以改 良加工與/或電子特性◊共軛聚合物之實例包括但不限 於聚(苯伸己烯)(p〇ly(phenylenevinylenes))、聚輳 (polyfluorenes)、聚(螺聯苐)(p〇iy(spirobifluorenes))、聚 49 201233662 噻吩(polythiophenes)、聚(對伸苯)(p〇iy(p-phenylenes))、 上述物質之共聚物及上述物質之混合物。 可藉由任何沉積技術塗敷該發射層14〇。如上所 述,在一實施例中’藉由一溶液沉積方法塗敷該發射 層。在一實施例中’藉由一連續溶液沉積方法塗敷該發 射層。 選擇層150可用以促進電子傳輸,亦可當作一緩衝 層或揭限層(confinement layer),以防止層介面之激子淬 滅。較佳而言’此層提昇電子移動率及減少激子淬滅。 使用在該選擇性電子傳輸層150之電子傳輸材料的實 例包括,金屬鉗合類咢辛化合物,其包含金屬喹啉衍生 物,例如三 (8- 羥基喹啉)鋁 (tris(8-hydroxyquinolato)aluminum,A1Q)、二(2-甲基-8- 喹啉)(對苯基 苯酚)鋁 (bis(2-methyl-8-quinolinolato)(p-phenylphenolato) aluminum ,BAlq)、四 _(8_ 經基啥琳)給 (tetrakis-(8-hydroxyquinolato)hafnium,HfQ)及四-(8-經 基喧琳)結(tetrakis_(8-hydroxyquinolato)zirconium, ZrQ);及唑化合物,例如2-(4-聯苯基)-5-(4-第三-丁基 苯基 )·1,3,4- 【口 + 号】 二唾 (2-(4-biphenylyl)-5-(4-t-butylphenyl)-l,3,4-oxadiazole, ?6〇)、3-(4-聯苯基)-4-苯基-5-(4-'1-丁基苯基)-1,2,4-三唾 (3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-l,2,4-tria zole,TAZ)及 1,3,5_三(苯基-2-苯并咪唑)苯 (l,3,5-tri(phenyl-2-benzimidazole)benzene,TPBI);啥【口 +咢】啉衍生物,例如2,3-雙(4·氟苯基)喹【口 +咢】啉S 48 201233662 A layer of material that responds to and produces a signal (eg, in a light detector). In one embodiment, the emissive material is an organic electroluminescent ("EL") material. Any organic electroluminescent material can be used in such devices. 'The organic electroluminescent materials include, but are not limited to, small molecule organic fluorescent compounds, fluorescent and phosphorescent metal complexes, co-polymers and their mixture. Examples of fluorescent compounds include, but are not limited to, [#+快] (chrysenes), pyrenes, perylenes, rubrenes, coumarins, anthracenes, thiazepines. Thiadiazoles, derivatives of the above, and mixtures of the foregoing. Examples of metal complexes include, but are not limited to, metalchelated oxinoid compounds, for example, tris(8-hydroxyquinolato)aluminuin, Alq3); % metallization Cyclone-like iridium and platinum electroluminescent compounds, for example, as disclosed in U.S. Patent No. 6,670,645, the disclosure of which is incorporated by reference to the entire disclosure of the disclosures of (phenylpyridine), phenylquinoline or phenylpyrimidine ligands, and organometallics such as those disclosed in PCT Application Publication Nos. W003/008424, W003/091688, and W003/040257 The complex and a mixture of the above. In some cases, the small molecule fluorescent or organometallic material is deposited as a dopant in the host material to improve processing and/or electronic properties. Examples of conjugated polymers include, but are not limited to, poly(benzene). (pene) (pene) (polyphenylenes), polyfluorenes, p〇iy (spirobifluorenes), poly 49 201233662 polythiophenes, poly (p-butene) (p〇iy (p-phenylenes)), a copolymer of the above substances and a mixture of the above. The emissive layer 14 can be applied by any deposition technique. As described above, in one embodiment, the emissive layer is applied by a solution deposition method. In one embodiment, the emissive layer is applied by a continuous solution deposition process. The selection layer 150 can be used to facilitate electron transport or as a buffer layer or a condensation layer to prevent exciton quenching of the layer interface. Preferably, this layer enhances electron mobility and reduces exciton quenching. Examples of the electron transporting material used in the selective electron transporting layer 150 include a metal-clamping oxin-like compound containing a metal quinoline derivative such as tris(8-hydroxyquinolato)aluminum (tris(8-hydroxyquinolato)) Aluminum, A1Q), bis(2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum, BAlq), tetra-(8_ (tetrakis-(8-hydroxyquinolato)hafnium, HfQ) and tetrakis_(8-hydroxyquinolato)zirconium, ZrQ); and azole compounds such as 2-(4) -biphenyl)-5-(4-tris-butylphenyl)·1,3,4-[oral + No.] 2-s 4-biphenylyl-5-(4-t-butylphenyl )-l,3,4-oxadiazole, ?6〇), 3-(4-biphenyl)-4-phenyl-5-(4-'1-butylphenyl)-1,2,4- 3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-l,2,4-tria zole, TAZ) and 1,3,5-tris(phenyl-2- Benzoimidazole benzene (TPBI); 啥 [mouth + 咢] porphyrin derivative, such as 2,3-bis(4.fluorophenyl) quinolin [ Methyl porphyrin

S 50 201233662 (2,3-bis(4-fluorophenyl)quinoxaline);啡啉,例如 47_ 二苯基-1,1〇·啡啉(4,7-diphenyl-l,l〇-phenanthroline, DPA)及2,9-二甲基-4,7-二苯基·u〇-啡啉 (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline , ddpa);及它們的混合物。在某些實施例中,該電子傳 輸層進一步包括一 η型摻雜物。η型摻雜劑材料為已知 技術。該η型摻雜劑包括但不限於第丨與2族之金屬; 第1與2族之金屬鹽,例如LiF、CsF與Cs2C03 ;第1 與2族之金屬有機化合物,例如Li喹啉;以及n型-摻 雜劑分子,例如無色染劑、金屬錯合物,例如w2(hpp)4, 其中hpp=l,3,4,6,7,8-六氳-2H-嘴啶并-[1,2斗嘯咬及二 茂鈷、四噻稠四苯、雙(伸乙二硫)四噻富瓦烯、雜環自 由基或二自由基以及雜環自由基或二自由基之二聚 物、寡聚物、聚合物、二螺化合物及多環。 電子傳輸層150通常係由化學或物理氣相沉積法 形成。 該陰極160係一對於注入電子或負電荷載子特別 有效的電極。該陰極可以是任何具有比該陽極低之功函 數的金屬或非金屬。用於陰極的材料可選自第丨族的鹼 金屬(例如Li、C〇、第2族(鹼土)金屬、第12族金 屬(包括稀土元素及鑭族元素)及婀系。可使用像鋁、 銦、鈣、鋇、釤及鎂以及其組合之材料。含u有機金 屬化合物、LiF、Li20、含Cs有機金屬化合物、cSF、 Cse及CsAO3也可在陰極層沉積之前進行沉積以降低 操作電壓。該層可稱作電子注入層。 — 201233662 該陰極層160通常係藉由一化學或物理氣相沉積 法形成。 在某些實施例中,有機電子裝置中可存在額外層。 應理解各功能性層可由多於一層所構成。 在一實施例中,不同的層所具有的厚度範圍如下: 陽極110為100-5000 A,在一實施例中為1〇〇_2〇〇〇 A ; 電洞注入層120為50-2500 A,在一實施例中為2〇〇_1〇〇〇 A ;電洞傳輸層130為50-2500 A,在一實施例中為 200-1000 A ;發射層140為10-2000 A,在一實施例中 為100-1000 A ;電子傳輸層15〇為5〇·2〇〇〇 a,在一實 施例中為 100-1000 A ;陰極 160 為 200_10000 A,在一 實施例中為300-5000 A。若存在電子注入層,材料沉積 量通常在1-100A之範圍内,在一實施例中為m〇a。 層厚度之理想比例將取決於所使用材料的實際性質。 在某些實施例中,提供一種有機電子裝置,包括 於-電極上的一第一有機活性層及一第二有機包= 層,且更包括一介於該第一及第二有機活性層之間的圖 案化底塗層,其中該第二有機活性層僅存在該底塗層存 在之區域,且其中該底塗層包括一具有式!之材料:如 上所述。在某些實施例中,該底塗層實質上係由一具有 式I之材料所組成。在某些實施例中,該第一有機活性 層包括一導電聚合物及一氟化酸聚合物。在某些實施例 中,該第二有機活性層包括電洞傳輸材料。在某些實施 例中,該第一有機活性層包括一摻雜氟化酸聚合物之導 電聚合物,該第二有機活性層主要係由電洞傳輸材料組 成0 、S 50 201233662 (2,3-bis(4-fluorophenyl)quinoxaline); phenanthroline, such as 47_diphenyl-1,1 〇 phenanthroline (4,7-diphenyl-l, l〇-phenanthroline, DPA) and 2,9-Dimethyl-4,7-diphenyl-u- phenanthroline (ddpa); and mixtures thereof. In some embodiments, the electron transport layer further comprises an n-type dopant. The n-type dopant material is a known technique. The n-type dopant includes, but is not limited to, metals of Groups 2 and 2; metal salts of Groups 1 and 2, such as LiF, CsF and Cs2C03; metal organic compounds of Groups 1 and 2, such as Li quinoline; An n-type dopant molecule, such as a colorless dye, a metal complex such as w2(hpp)4, wherein hpp=l,3,4,6,7,8-hexa-2H-mouth pyridine-[ 1,2 screaming bite and dicobalt, tetrathia condensed tetraphenyl, bis(ethylene disulfide) tetrathiafulvalene, heterocyclic or diradical and heterodimer radical or diradical dimerization , oligomers, polymers, snail compounds and polycyclic rings. The electron transport layer 150 is usually formed by chemical or physical vapor deposition. The cathode 160 is an electrode that is particularly effective for injecting electrons or negative charge carriers. The cathode can be any metal or non-metal having a lower work function than the anode. The material for the cathode may be selected from the group consisting of alkali metals of the steroid family (for example, Li, C 〇, Group 2 (alkaline earth) metals, Group 12 metals (including rare earth elements and lanthanum elements), and lanthanides. Materials containing indium, calcium, strontium, barium, and magnesium, and combinations thereof. The organometallic compound containing u, LiF, Li20, organometallic compounds containing Cs, cSF, Cse, and CsAO3 may also be deposited prior to deposition of the cathode layer to lower the operating voltage. This layer may be referred to as an electron injecting layer. — 201233662 The cathode layer 160 is typically formed by a chemical or physical vapor deposition process. In some embodiments, additional layers may be present in the organic electronic device. The layer may be composed of more than one layer. In one embodiment, the different layers have a thickness range as follows: The anode 110 is 100-5000 A, in one embodiment 1 〇〇 2 〇〇〇 A; The hole injection layer 120 is 50-2500 A, in one embodiment 2〇〇_1〇〇〇A; the hole transport layer 130 is 50-2500 A, in one embodiment 200-1000 A; the emission layer 140 is 10-2000 A, in one embodiment 100-1000 A; electron transport layer 15〇 5〇·2〇〇〇a, in one embodiment 100-1000 A; cathode 160 is 200-10000 A, in one embodiment 300-5000 A. If an electron injecting layer is present, the material deposition amount is usually 1 Within the range of -100 A, in one embodiment m〇a. The desired ratio of layer thickness will depend on the actual properties of the materials used. In certain embodiments, an organic electronic device is provided, including on an electrode a first organic active layer and a second organic package=layer, and further comprising a patterned undercoat layer interposed between the first and second organic active layers, wherein the second organic active layer only has the primer The region in which the layer is present, and wherein the undercoat layer comprises a material having the formula: as described above. In some embodiments, the undercoat layer consists essentially of a material having Formula I. In an embodiment, the first organic active layer comprises a conductive polymer and a fluorinated acid polymer. In some embodiments, the second organic active layer comprises a hole transport material. In some embodiments, the The first organic active layer comprises a doped fluorinated acid polymer Ferroelectric polymer, the second organic active layer is mainly a hole transport material is set to 0,

S 52 201233662 在某些實施例中,提供一種用於製造一有機電子裝 置之方法,該有機電子裝置包括一陽極,於該陽極上具 有一電洞注入層及一電洞傳輸層,該方法包括: 在該陽極上形成該電洞注入層,該電洞注入層包括 一氟化材料且具有一第一表面能; 直接在該電洞注入層上形成一底塗層; 以圖案化方式使該底塗層曝露於輻射,產生曝露區 域和未曝露區域; 顯影該底塗層,以有效地自該等未曝露區域移除該 底塗層,導致在該電洞注入層上產生經顯影底塗層圖 案,該經顯影底塗層具有一第二表面能,其高於該第一 表面能;以及 於該底塗層之經顯影圖案上進行液相沉積以形成 一電洞傳輸層; 其中該底塗層包括一具有式I之材料,如上所述。 上述内容顯示於圖3中。裝置200具有一陽極210, 在一基板(未繪出)上。位於陽極上者為電洞注入層 220。經顯影之底塗層如225所示。電洞注入層220之 表面能係小於底塗層225之表面能。當電洞傳輸層230 被沉積在底塗層及電洞注入層之上時,其並不會濕潤電 洞注入層的低能重表面,且僅會留在底塗層的圖案上。 在某些實施例中’該電洞注入層包括一摻雜氟化酸 聚合物的導電聚合物。在某些實施例中,該電洞注入層 主要係由一摻雜氟化酸聚合物的導電聚合物組成。在某 些實施例中,該電洞注入層主要係由一摻雜氟化酸聚合 物及無機奈米粒子的導電聚合物組成。在某些實施例 53 201233662 中,該等無機奈米粒子係選自於由氧化矽、氧化鈦、氧 化鍅、三氧化鉬、氧化釩、氧化鋁、氧化鋅、氧化釤、 氧化釔、氧化鉋、氧化銅(II)、氧化錫(IV)、氧化銻及它 們的組合所組成之群組。已於例如在已公開之美國專利 申請案第 2004/0102577 號、第 2004/0127637 號、第 2005/0205860號和已公開之pct申請案w〇 2009/018009中描述此種材料。 在某些實施例中,該底塗層實質上係由一具有式工 之材料所組成。 在某些實施例中,該電洞傳輸層係選自於由三芳 胺、咔唑、它們的聚合類似物及它們的組合所組成之群 ,。在某些實施例中,該電洞傳輸層係選自於由聚合三 芳胺、具有銜接在一非平面組態中的共軛部分的聚合三 芳胺及第和三芳胺的共聚合物所組成之群組。 在某些實施射,财法進—步包括藉由於該電洞 傳輸層上以液相沉積形成一發射層。在某些實施例中’ 發射層包括一電致發光摻雜劑及一或多種:體材料。在 某些實施例中’該發射層係藉由—液相沉積技術形成, 該液相沉積技術選自於由噴墨印刷及連續式喷嘴印刷 所組成之群組。 實例 此處所描述的概念將以下列實例進一步說明之,該 等實例不限辦請專利範圍中所描述本發明之射。 實例1S 52 201233662 In some embodiments, a method for fabricating an organic electronic device includes an anode having a hole injection layer and a hole transport layer on the anode, the method comprising Forming the hole injection layer on the anode, the hole injection layer comprising a fluorinated material and having a first surface energy; forming an undercoat layer directly on the hole injection layer; The undercoat layer is exposed to radiation to produce an exposed area and an unexposed area; the undercoat layer is developed to effectively remove the undercoat layer from the unexposed areas, resulting in a developed primer on the hole injection layer a layer pattern having a second surface energy higher than the first surface energy; and performing liquid deposition on the developed pattern of the undercoat layer to form a hole transport layer; The undercoat layer comprises a material having the formula I as described above. The above is shown in Figure 3. Apparatus 200 has an anode 210 on a substrate (not shown). Located on the anode is a hole injection layer 220. The developed undercoat layer is shown as 225. The surface energy of the hole injection layer 220 is less than the surface energy of the undercoat layer 225. When the hole transport layer 230 is deposited over the undercoat layer and the hole injection layer, it does not wet the low energy surface of the hole injection layer and remains only on the pattern of the undercoat layer. In some embodiments, the hole injection layer comprises a conductive polymer doped with a fluorinated acid polymer. In some embodiments, the hole injection layer consists essentially of a conductive polymer doped with a fluorinated acid polymer. In some embodiments, the hole injection layer consists essentially of a conductive polymer doped with a fluorinated acid polymer and inorganic nanoparticles. In certain embodiments 53 201233662, the inorganic nanoparticles are selected from the group consisting of cerium oxide, titanium oxide, cerium oxide, molybdenum trioxide, vanadium oxide, aluminum oxide, zinc oxide, cerium oxide, cerium oxide, and oxidized planing. a group consisting of copper (II) oxide, tin (IV) oxide, cerium oxide, and combinations thereof. Such materials are described in, for example, the published U.S. Patent Application Serial No. 2004/0102577, No. 2004/0127637, No. In some embodiments, the undercoat layer consists essentially of a material having a workmanship. In certain embodiments, the hole transport layer is selected from the group consisting of triarylamines, carbazoles, polymeric analogs thereof, and combinations thereof. In certain embodiments, the hole transport layer is selected from the group consisting of a polymeric triarylamine, a polymeric triarylamine having a conjugated moiety attached to a non-planar configuration, and a copolymer of a polytriarylamine and a triarylamine. Group. In some implementations, the method further comprises forming an emissive layer by liquid deposition on the transport layer of the hole. In some embodiments the emissive layer comprises an electroluminescent dopant and one or more: bulk materials. In some embodiments the emissive layer is formed by a liquid phase deposition technique selected from the group consisting of ink jet printing and continuous nozzle printing. EXAMPLES The concepts described herein will be further illustrated by the following examples, which are not limited to the invention described in the scope of the patent. Example 1

S 54 201233662 本實例說明化合物c及D之製備。 該等化合物係根據下示流程進行製備:S 54 201233662 This example illustrates the preparation of compounds c and D. These compounds were prepared according to the procedure shown below:

-PS JDH HO*-PS JDH HO*

螺-雙酴 1 係以 Chen,W. -F.; Lin,Η. Dai S aSnail-Double 酴 1 is Chen, W. -F.; Lin, Η. Dai S a

Le"ea2004, A 2341所描述之流程進行合成。 將二醇 1 (10.0 g, 32.4 mmol)溶於 300 mL 的二氯甲 烧中並冷卻至0C。將三氟甲磺酸酐(13.1 mL,77.8 mmol) 緩緩加入並將反應緩緩升溫至室溫一整夜。以0.5 Μ HC1對所得混合物進行淬火。將層分離並依序以碳酸鈉 溶液、水及鹽水沖洗有機層。蒸發揮發性物質後得到淡 粉紅色固體,產率為81%(15g)。 55 201233662 於氮氣氣氛下,在一小玻璃瓶中倒入雙三氟甲磺酸 鹽 2 (3.07 g,5.36 mmol)、4-胺基聯苯(i.9〇4 g, 11.3 _〇1)、Pd2(dba)3 (0·246 g,〇 268 _〇1)、u,雙(二苯 基膦基)一茂鐵(〇·297 g,0.536 mmol)及甲苯(40 mL)。將 所得溶液攪拌ίο分鐘,之後加入Na〇tBu (1 248 g,13 4 mmol)。在室溫下攪拌反應一整夜,之後加熱至18 個小時。在冷卻至室溫後,將所得濃稠溶液以曱苯(〜100 mL)稀釋並以矽土墊過濾。蒸發揮發性物質並以矽土純 化,利用二氣甲烷及己烷(〇_4〇〇/0)混合物作為沖提液以 獲得化合物3,產率22% (0.73 g)。 於氮氣氣氛下,在一小玻璃瓶中倒入二胺3 (0.73 g, 1 -20 mmol)、4,4碘溴聯苯(0.902 g,2.51 mmol)、PcJ2 (dba) 3 (0.044 g,0.048 mmol)、1,1’-雙(二苯基膦基)二茂鐵 (〇·〇53 g,0.096 mmol)及甲苯(40 mL)。將所得溶液授摔 1〇 分鐘’之後加入 NaC^Bu (0.242 g, 2.51 mmol)。將反 應加熱至90°C 22個小時。在冷卻至室溫後,將所得濃 稠溶液以甲苯(〜100 mL)稀釋並以矽土墊過濾◊蒸發揮 發性物質並以矽土純化,利用二氣甲烷及己烷(40%)混 合物作為沖提液以獲得化合物C,產率37% (0.479 g, 99%純度)。 使用Yamamoto條件聚合化合物C以獲得化合物d (GPC: Μη = 2781, Mw = 23,325)。 實例2 本實例說明化合物B之製備。 化合物係根據下示流程進行製備。The process described by Le"ea2004, A 2341 is synthesized. The diol 1 (10.0 g, 32.4 mmol) was dissolved in 300 mL of methylene chloride and cooled to 0C. Trifluoromethanesulfonic anhydride (13.1 mL, 77.8 mmol) was slowly added and the reaction was slowly warmed to room temperature overnight. The resulting mixture was quenched with 0.5 Μ HC1. The layers were separated and the organic layer was washed sequentially with sodium carbonate solution, water and brine. Evaporation of the volatile material gave a pale pink solid with a yield of 81% (15 g). 55 201233662 Under a nitrogen atmosphere, pour bistrifluoromethanesulfonate 2 (3.07 g, 5.36 mmol), 4-aminobiphenyl (i.9〇4 g, 11.3 _〇1) into a small glass vial. Pd2(dba)3 (0·246 g, 〇268 _〇1), u, bis(diphenylphosphino)ferrocene (〇·297 g, 0.536 mmol) and toluene (40 mL). The resulting solution was stirred for ίο min, then Na〇tBu (1 248 g, 13 4 mmol) was added. The reaction was stirred at room temperature overnight and then heated to 18 hours. After cooling to room temperature, the resulting thick solution was diluted with toluene (~100 mL) and filtered thru a pad. The volatile matter was evaporated and purified with alumina, and a mixture of di-methane and hexane (????/0) was used as a solvent to obtain compound 3 in a yield of 22% (0.73 g). Under a nitrogen atmosphere, diamine 3 (0.73 g, 1-20 mmol), 4,4 iobrobromobiphenyl (0.902 g, 2.51 mmol), PcJ2 (dba) 3 (0.044 g, pour into a small glass vial, 0.048 mmol), 1,1'-bis(diphenylphosphino)ferrocene (〇·〇53 g, 0.096 mmol) and toluene (40 mL). The resulting solution was dropped for 1 min. After that, NaC^Bu (0.242 g, 2.51 mmol) was added. The reaction was heated to 90 ° C for 22 hours. After cooling to room temperature, the resulting thick solution was diluted with toluene (~100 mL) and filtered over a pad of alumina to evaporate volatiles and purified with alumina, using a mixture of di-methane and hexane (40%). The extract was taken to obtain Compound C in a yield of 37% (0.479 g, 99% purity). Compound C was polymerized using Yamamoto conditions to obtain compound d (GPC: Μn = 2781, Mw = 23, 325). Example 2 This example illustrates the preparation of Compound B. The compounds were prepared according to the procedure shown below.

S 56 201233662S 56 201233662

化合物B 於氮氣氣氛下,在一小玻璃瓶中倒入雙三氟甲磺酸 鹽 2 (1.875 g,3_27 mmol)、3_甲基聯苯-4-胺(1.26 g,6.88 mmol)、Pd2(dba)3 (0150 g,0.164 mmol)、1,Γ·雙(二苯 基膦基)二茂鐵(0.182 g, 0.327 mmol)及甲苯(30 mL)。將 所得溶液攪拌10分鐘,之後加入NaC^Bu (0.762 g, 8.19 mmol)。將反應加熱至90°C 18個小時。在冷卻至室溫 後,將所得濃稠溶液以甲苯(〜100 mL)稀釋並以矽土墊 過濾。蒸發揮發性物質並以矽土純化,利用二氯曱烷及 己烷(0-40%)混合物作為沖提液以獲得化合物6,產率 61% (1.28 g)。Compound B was poured into bistrifluoromethanesulfonate 2 (1.875 g, 3-27 mmol), 3-methylbiphenyl-4-amine (1.26 g, 6.88 mmol), Pd2 in a small glass vial under a nitrogen atmosphere. (dba) 3 (0150 g, 0.164 mmol), 1, bis(diphenylphosphino)ferrocene (0.182 g, 0.327 mmol) and toluene (30 mL). The resulting solution was stirred for 10 minutes, then NaC^Bu (0.762 g, 8.19 mmol). The reaction was heated to 90 ° C for 18 hours. After cooling to room temperature, the resulting thick solution was diluted with toluene (~100 mL) and filtered thru a pad. The volatiles were evaporated and purified with alumina, using a mixture of dichloromethane and hexanes (0-40%) as a solvent to obtain compound 6 in a yield of 61% (1.28 g).

S 57 201233662 乳下在一小玻璃瓶中倒入二胺6(ι.28 g, 2.00 mmol)、4-強 〇 晏·3·曱基-3’-苯基-聯苯(1.943 g,6.00 mm〇1)、Pd2(dba)3 (0.044 g, 0.048 mmol)、1,1,-雙(二苯 基膦基)-茂鐵(〇 〇19 g,〇獅麵。丨)及曱苯㈣响。將 所得'合液麟1G分鐘,之後加人NaQtBu (G.560 g, 6.0 mmol)將曰反應加熱至贼μ個小時。在冷卻至室溫 後’將f斤得濃_溶液以甲苯(〜100 mL)稀釋並以;ε夕土整 己^物f並时土純化,湘三氯甲院及 44二(1。§)°广。物作為沖提液以獲得化合物B,產率 動作^ ^ ’並非上文一般性描述或實例中所述之 ==之部分可能並非必要的, 而,=二 :一一所=::== 前文已針對特定實施例之效益、 決方案加以闡述。然而,不可將1優點及問題解 方案以及任何可使這些效 優點、問題解決 突顯的特徵解讀為^憂.或問題解決方案更為 鍵、必需料料相申請範圍之關 58 201233662 應當理解為了清楚說明起見,本文所述之各實施例 内容中的某些特徵,亦可以組合之方式於單獨實施例中 別加以提供。相反地’簡潔起見,本文所述許多特徵於 同一實施例中’其亦可分別提供或提供於任何次組合 中。此外,當提及範圍的數值時,其係包括該範圍内的 所有及每一個數值。 【圖式簡單說明】 實施例係說明於隨附圖式中,以增進對於本文中所 呈現之概念的理解。 圖1包括一接觸角之圖式。 圖2包括一有機電子裝置之說明。 圖3包括具有-底塗層之有機電子裝置之部分 說明。 熟習此項技術者應瞭解,圖式中之 單及清楚之目的而說明,且不一定按比崎製、。= 在該等圖式中,某些物件的尺寸相對於其 所放大,以有助於對實施例的暸解。、物件可靶有 59 201233662 【主要元件符號說明】S 57 201233662 Under the milk, diamine 6 (ι.28 g, 2.00 mmol), 4-strong 〇晏·3·decyl-3'-phenyl-biphenyl (1.943 g, 6.00) was poured into a small glass vial. Mm〇1), Pd2(dba)3 (0.044 g, 0.048 mmol), 1,1,-bis(diphenylphosphino)-ferrocene (〇〇19 g, 〇狮面.丨) and toluene (IV) ring. The obtained mixture was heated for 1 hour in 1 hour, and then NaQtBu (G.560 g, 6.0 mmol) was added to heat the hydrazine reaction to the thief for μ hours. After cooling to room temperature, 'five the concentrated amount of _ solution toluene (~100 mL) and dilute it; ε 土 整 整 ^ 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘) ° wide. As the extract to obtain the compound B, the yield action ^ ^ ' is not part of the general description or the == described in the example above, but, = 2: one by one =::== The foregoing has been described with respect to the benefits and solutions of a particular embodiment. However, it is not possible to interpret the advantages and solutions of the problem and any features that can make these advantages and problems solve the problem as a concern or a solution to the problem. For purposes of explanation, some of the features of the various embodiments described herein may also be combined in a separate embodiment. Conversely, many of the features described herein may be provided separately or in any sub-combination. In addition, when referring to a range of values, it includes all and every value within the range. BRIEF DESCRIPTION OF THE DRAWINGS The embodiments are described in the accompanying drawings to improve the understanding of the concepts presented herein. Figure 1 includes a diagram of a contact angle. Figure 2 includes an illustration of an organic electronic device. Figure 3 includes a partial illustration of an organic electronic device with a bottomcoat. Those skilled in the art should be aware of the single and clear purpose of the drawings, and not necessarily by Bisaki. = In these figures, the dimensions of some of the objects are relative to them to facilitate understanding of the embodiments. Objects can be targeted 59 201233662 [Main component symbol description]

S 100. ..電子裝置 110. .陽極層 120. ..電洞注入層 130. ..電洞傳輸層 140. ..發射層 150. ..電子傳輸層 160. ..陰極層 200. ..裝置 210. ..陽極 220. ..電洞注入層 225. ..底塗層 230. ..電洞傳輸層 60S 100. .. electronic device 110. anode layer 120.. hole injection layer 130. . . hole transmission layer 140. .. emission layer 150. .. electron transport layer 160.. cathode layer 200. Device 210. .. anode 220.. hole injection layer 225. . . . undercoat 230 . . . hole transport layer 60

Claims (1)

201233662 七、申請專利範圍: 1·種用於在—n形成_被_之第二層之方法,該 方法包括: 形成具有一第一表面能之該第一層; 以一底塗材料處理該第一層以形成一底塗層; 以圖案化方式使該底塗層曝露於輻射,產生曝露 區域和未曝露區域; 顯影該底塗層以自該等未曝露區域有效移除該底 層,產生一具有一底塗層圖案之第一層,其中該底塗層 圖案具有一第二表面能,且該第二表面能大於該第一表面 能;以及 , 於該第一層上的該底塗層圖案上進行液相沉積以 形成該第二層; 其中該底塗材料具有式丨201233662 VII. Patent Application Range: 1. A method for forming a second layer of _ _ _, the method comprising: forming the first layer having a first surface energy; treating the material with a primer material Forming a first layer to form an undercoat layer; patterning the undercoat layer to radiation to produce an exposed area and an unexposed area; developing the undercoat layer to effectively remove the underlayer from the unexposed areas, resulting in a first layer having an undercoating pattern, wherein the undercoating pattern has a second surface energy, and the second surface energy is greater than the first surface energy; and the primer layer on the first layer Performing liquid deposition on the layer pattern to form the second layer; wherein the primer material has the formula 其中: Ar1至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、其 氛化類似物及其經取代衍生物所組成之群組; Rl於每次出現時係相同或不同,且係選自於由D、F、 烧基、芳基、烷氧基、矽基及一可交聯基團所組成 61 201233662 之群組,其中相鄰R1基團可結合在一起以形成一 芳族環; R2於每次出現時係相同或不同,且係選自於由Η、D 及鹵素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以及 η為大於0的整數。 2.如請求項1所述之方法,其中該底塗材料具有式IIWherein: Ar1 to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, an condensed analog thereof, and a substituted derivative thereof; Rl is the same or different at each occurrence, and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group 61 201233662, wherein the phase The adjacent R1 groups may be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of ruthenium, D and halogen; a is present at each occurrence The same or different and are integers from 0 to 4; and η is an integer greater than zero. 2. The method of claim 1, wherein the primer material has the formula II 其中: Ar1與Ar2係相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、其 氘化類似物及其經取代衍生物所組成之群組; E於每次出現時係相同或不同,且係選自於由一單 鍵、C(R3)2、C(R4)2C(R4)2、Ο、Si(R3)2、Ge(R3)2 所組成之群組; R1於每次出現時係相同或不同,且係選自於由D、F、 烷基、芳基、烷氧基、矽基及一可交聯基團所組成 之群組,其中相鄰R1基團可結合在一起以形成一 芳族環; S 62 201233662 R2於每次出現時係相同或不同,且係選自於由Η、D •及鹵素所組成之群組; R3於每次出現時係相同或不同,且係選自於由烷基及 芳基所組成之群組,其中相鄰R3基團可結合在一 起以形成一脂族環; R4於每次出現時係相同或不同,且係選自於由Η、D 及烷基所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以及 η為大於0的整數。 3.如請求項1所述之方法,其中該底塗材料具有式IIIWherein: Ar1 and Ar2 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; E is the same or different at each occurrence, and is selected from a single bond, C(R3)2, C(R4)2C(R4)2, Ο, Si(R3)2, Ge(R3)2 a group consisting of; R1 is the same or different at each occurrence, and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group a group wherein adjacent R1 groups may be joined together to form an aromatic ring; S 62 201233662 R2 is the same or different at each occurrence and is selected from the group consisting of ruthenium, D • and halogen R3 is the same or different at each occurrence and is selected from the group consisting of an alkyl group and an aryl group, wherein adjacent R3 groups may be bonded together to form an aliphatic ring; When present, the same or different, and selected from the group consisting of Η, D, and alkyl; a is the same or different at each occurrence and is an integer from 0-4; and η is greater than 0. . 3. The method of claim 1, wherein the primer material has the formula III 其中= Ar1與Ar2係相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、其 氘化類似物及其經取代衍生物所組成之群組; R1於每次出現時係相同或不同,且係選自於由D、F、 烧基、芳基、烧氧基、碎基及一可交聯基團所組成 63 201233662 之群組,其中相鄰R1基團可結合在一起以形成一 芳族環; R2於每次出現時係相同或不同,且係選自於由Η、D 及鹵素所組成之群組; R5於每次出現時係相同或不同,且係選自於由D、F、 烷基、芳基、烷氧基、矽基及一可交聯基團所組成 之群組; R6至R9於每次出現時係相同或不同,且係選自於由 Η、D、F、烷基、芳基、烷氧基、矽基及一可交聯 基團所組成之群組,惟其前提是R6及R7之至少一 者為烷基或矽基,且R8及R9之至少一者為烷基或 碎基; a在每次出現時係相同或不同且係0-4之整數。 b在每次出現時係相同或不同且係0-2之整數;以及 η為大於0的整數。 4.如請求項1-3中任一項所述之方法,其中Ar1及Ar2具有Wherein = Ar1 is the same as or different from Ar2 and is an aryl group; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is the same or different at each occurrence, and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, fragment and a crosslinkable group 63 201233662, wherein the phase The adjacent R1 groups may be joined together to form an aromatic ring; R2 is the same or different at each occurrence, and is selected from the group consisting of ruthenium, D, and halogen; R5 is present at each occurrence The same or different, and selected from the group consisting of D, F, alkyl, aryl, alkoxy, fluorenyl and a crosslinkable group; R6 to R9 are the same at each occurrence or Different from, and selected from the group consisting of ruthenium, D, F, alkyl, aryl, alkoxy, fluorenyl and a crosslinkable group, provided that at least one of R6 and R7 is An alkyl or fluorenyl group, and at least one of R8 and R9 is an alkyl group or a fragment; a is the same or different at each occurrence and is an integer from 0 to 4. b is the same or different and is an integer from 0 to 2 at each occurrence; and η is an integer greater than zero. 4. The method of any of claims 1-3, wherein Ar1 and Ar2 have 其中: S 64 201233662 R 〇在每次出現時係相同或不同且係選自於由D、燒 基、烷氧基、矽氧烷及矽基所組成之群組; c在每次出現時係相同或不同且係之整數; d為0-5之整數;以及 m為1至5之整數。 5. 如請求項1-3中任一項所述之方法,其中Ari及Ar2係選 自於由苯基、聯苯、聯三苯、其氘化衍生物及其經取代衍 生物所組成之群組,該經取代衍生物具有選自於由烷基、 燒氧基、矽基及一具有一交聯基之取代基所組成之群組之 一或多個取代基。 6. 如請求項ι·5中任一項所述之方法,其中a = 〇。 7. 如請求項2所述之方法,其中E係選自於由c(r3)2及 C(R4)2C(R4)2所組成之群組。 8. 如請求項2或7所述之方法,其中R3係選自於由苯基、 聯苯及氟烷基所組成之群組。 9. 如請求項2、7或8所述之方法,其中R4係選自於由η及 D所組成之群組。 10. 如清求項3所述之方法,其中R6 = R8 =烧基。 11. 如睛求項3或10所述之方法,其中R7 = R9=烷基。 65 201233662 12. =用於製造-有機電子裝置之方法,該有機電子裝置 包括一電極,該電極具有設於其上的〜第一有機活性層 及一第二有機活性層,該方法包括: 在該電極上形成具有—第1面能之第 活性層; 以一底塗材料處理該第一有機活性層以形成 .底塗層; 區域和方式韻底塗㈣,產生曝露 顯影該底塗層以自該等未曝露區域有效移除該 :塗層,產生-具有一底塗層圖案之第一活性有機層, 其中該底塗層圖案具有-第二表面能,且該第二表面能 大於該第一表面能;以及 於該第一有機活性層上的該底塗層圖案上進行 液相沉積以形成該第二有機活性層; 其中該底塗材料具有式j R2Wherein: S 64 201233662 R 〇 is the same or different at each occurrence and is selected from the group consisting of D, alkyl, alkoxy, decane and sulfhydryl; c is present at each occurrence The same or different and integers; d is an integer from 0 to 5; and m is an integer from 1 to 5. The method of any one of claims 1 to 3, wherein Ari and Ar2 are selected from the group consisting of phenyl, biphenyl, terphenyl, a deuterated derivative thereof, and substituted derivatives thereof. In the group, the substituted derivative has one or more substituents selected from the group consisting of an alkyl group, an alkoxy group, a thiol group, and a substituent having a crosslinking group. 6. The method of any one of clauses 1-5, wherein a = 〇. 7. The method of claim 2, wherein the E is selected from the group consisting of c(r3)2 and C(R4)2C(R4)2. 8. The method of claim 2, wherein R3 is selected from the group consisting of phenyl, biphenyl, and fluoroalkyl. 9. The method of claim 2, 7 or 8, wherein R4 is selected from the group consisting of η and D. 10. The method of claim 3, wherein R6 = R8 = alkyl group. 11. The method of claim 3, wherein R7 = R9 = alkyl. 65 201233662 12. A method for manufacturing an organic electronic device, the organic electronic device comprising an electrode having a first organic active layer and a second organic active layer disposed thereon, the method comprising: Forming an active layer having a first surface energy on the electrode; treating the first organic active layer with a primer material to form an undercoat layer; and applying a region and a pattern to the undercoat (4) to cause exposure to develop the undercoat layer Effectively removing the coating from the unexposed regions to produce a first active organic layer having an undercoating pattern, wherein the undercoating pattern has a second surface energy, and the second surface energy is greater than the a first surface energy; and performing liquid deposition on the undercoat layer pattern on the first organic active layer to form the second organic active layer; wherein the undercoat material has the formula j R2 其中: Ar至Ar4為相同或不同且為芳基; L係:選自於由—螺基、—金剛炫基、雙環環己基、其 氛化類似物及其經取代衍生物所組成之群組; S 66 201233662 R1於每次出現時係相同或不同,且係選自於由D、F、 烧基、芳基、烧氧基、石夕基及一可交聯基團所組 成之群組,其中相鄰R1基團可結合在一起以形成 一芳族環; R2於每次出現時係相同或不同,且係選自於由H、D 及鹵素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以及 η為大於0的整數。 13. 如請求項12所述之方法,其中該第一活性層為一電洞傳 輸層,以及該第二活性層為一發射層。 14. 如請求項12所述之方法,其中該第一活性層為一電洞注 入層,以及該第二活性層為一電洞傳輸層。 15. 如請求項14所述之方法,其中該電洞注入層包括一導電 聚合物及一氟化酸聚合物。 16. 如請求項14所述之方法,其中該電洞注入層實質上係由 一摻雜一氟化酸聚合物及無機奈米粒子之導電聚合物所 組成。 17. 如請求項14所述之方法,更包括於該電洞傳輸層上,藉 由液相沉積形成一發射層。 67 201233662 18.—種有機電子裝置,包括位於一電極上的一第一有機活 性層及一第二有機活性層,且更包括一介於該第一及第 二有機活性層之間的圖案化底塗層,其中該第二有機活 性層僅存在該底塗層存在之區域,且其中該底塗層包括 一具有式I之材料Wherein: Ar to Ar4 are the same or different and are aryl; L-system: a group selected from the group consisting of a spiro group, a diamond substrate, a bicyclocyclohexyl group, an condensed analog thereof, and a substituted derivative thereof ; S 66 201233662 R1 is the same or different at each occurrence, and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, Shi Xiji and a crosslinkable group; Wherein adjacent R1 groups may be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of H, D and halogen; When present, are the same or different and are integers from 0 to 4; and η is an integer greater than zero. 13. The method of claim 12, wherein the first active layer is a hole transport layer and the second active layer is an emitter layer. 14. The method of claim 12, wherein the first active layer is a hole injection layer and the second active layer is a hole transport layer. 15. The method of claim 14, wherein the hole injection layer comprises a conductive polymer and a fluorinated acid polymer. 16. The method of claim 14, wherein the hole injection layer consists essentially of a conductive polymer doped with a fluorinated acid polymer and inorganic nanoparticles. 17. The method of claim 14, further comprising forming an emissive layer by liquid deposition on the hole transport layer. 67 201233662 18. An organic electronic device comprising a first organic active layer and a second organic active layer on an electrode, and further comprising a patterned bottom between the first and second organic active layers a coating wherein the second organic active layer is only present in the region where the undercoat layer is present, and wherein the undercoat layer comprises a material having the formula I 其中: Ar1至Ar4為相同或不同且為芳基; L係選自於由一螺基、一金剛烷基、雙環環己基、其 氘化類似物及其經取代衍生物所組成之群組; R1於每次出現時係相同或不同,且係選自於由D、F、 烷基、芳基、烷氧基、矽基及一可交聯基團所組 成之群組,其中相鄰R1基團可結合在一起以形成 一芳族環; R2於每次出現時係相同或不同,且係選自於由H、D 及鹵素所組成之群組; a在每次出現時係相同或不同且係0-4之整數;以及 η為大於0的整數。 S 68Wherein: Ar1 to Ar4 are the same or different and are aryl; L is selected from the group consisting of a spiro group, an adamantyl group, a bicyclocyclohexyl group, a deuterated analog thereof, and a substituted derivative thereof; R1 is the same or different at each occurrence, and is selected from the group consisting of D, F, alkyl, aryl, alkoxy, thiol and a crosslinkable group, wherein adjacent R1 The groups may be joined together to form an aromatic ring; R2 is the same or different at each occurrence and is selected from the group consisting of H, D and halogen; a is the same at each occurrence or Different and are integers from 0 to 4; and η is an integer greater than zero. S 68
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