201232648 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由引進熱機械張力而切割基板之方 法本發明亦係關於由所指定的切割方法精確製造基板形 狀。本發明亦係關於一種用於執行根據本發明之該方法之 裝置。 【先月!]技術】 很多工業製程及貨物需要經受塑性破裂之材料（諸如玻 璃）之精確且受控切割。 習知切割方法通常需要移除一些材料以供分離（例如鋸 切或習知雷射切割），引起並非乾淨切割之鄰近基板表面 與邊緣之污染，即由於出現次級結構而背離一理想切割表 面。-些此等標準切割製程涉及機械研磨操作，例如由目 月IJ用於大規模玻璃製造的鑽石塗覆輪或鑽子切割。此等技 術知及所得邊緣之規則/品質並釋放不當影響基板表面之 碎屬粒子，通常需要額外清潔或拋光步驟。很多此等標準 切割製程亦會引起沿著切割之微裂痕，當施加機械應力時 微裂痕可成為巨觀破裂及基板毁壞之起始點。 更夕新近㈣方法使用雷射束以沿著基板上的—路徑加 熱，基板隨後繼之以使用一液體或氣體介質或其等混合物 引起經界疋破裂之一冷卻系統。然而，此等技術具有以 下缺點.所需設備之高成本、保護人員免於直接及反射雷 射暴露之必要性、不同材料（諸如不同玻璃類型）之雷射束 波長之不同光學回應。此外，雷射切割僅適於受限範圍之 I53645.doc 201232648 材料厚度，目前過薄或過厚基板多數使用標準 【發明内容】 因此’本發明之一目的為提供切割一材料而無需移除該 基板之諸部分之-方法；本發明之另—目的為有效處理薄 基板與厚基板並致能該基板之直接及隨機成形切割之切 割。本發明之又-目的為避免在切割製程期間釋放的任何 碎屑材料之沈^此外，本發明之—目的為獲得切割區域 内之乾淨且平坦表面並防止沿著切割邊界形成微裂痕。本 發明之又-目的為提供切割—材料之—廉價方法。本發明 之又一目的為提供易於執行且容許獲得不同厚度之材料之 規則切割之一方法。 所有此等目的係由㈣—基板之—方法解決，該方法包 括下列步驟： a) 提供待切割之一基板， b) 藉由在自！ kHz至10 GHz之範圍内之一頻率下施加一 AC電壓及一電流至該基板之一經界定區域而經由連 接至一 AC電壓源'的一冑或多個電極施加冑能及熱能 至该基板以藉此加熱該經界定區域， c) 冷卻該經界定區域， d) 其中在步騾b)期間，該經界定區域係藉由 i) 相對於該基板移動該（等）電極， ii) 相對於該（等）電極移動該基板，或201232648 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of cutting a substrate by introducing thermomechanical tension. The present invention also relates to the precise manufacture of a substrate shape by the specified cutting method. The invention also relates to an apparatus for performing the method according to the invention. [First Month!] Technology] Many industrial processes and goods require precise and controlled cutting of materials that undergo plastic rupture, such as glass. Conventional cutting methods typically require removal of some material for separation (eg, sawing or conventional laser cutting), causing contamination of adjacent substrate surfaces and edges that are not clean cuts, ie, away from an ideal cutting surface due to secondary structures. . Some of these standard cutting processes involve mechanical grinding operations, such as diamond coating wheels or drill cutting for large scale glass manufacturing by MJ. These techniques are known to the rules/quality of the resulting edges and release the granules that improperly affect the surface of the substrate, often requiring additional cleaning or polishing steps. Many of these standard cutting processes also cause microcracks along the cut. When mechanical stress is applied, microcracks can be the starting point for macroscopic cracking and substrate damage. Further, the fourth method uses a laser beam to heat along a path on the substrate, which is then followed by a cooling system that uses a liquid or gaseous medium or a mixture thereof to cause a boundary rupture. However, these techniques have the following disadvantages: the high cost of the equipment required, the need to protect personnel from direct and reflected laser exposure, and the different optical responses of the laser beam wavelengths of different materials, such as different glass types. In addition, laser cutting is only suitable for a limited range of I53645.doc 201232648 material thickness, currently too thin or too thick substrate majority use standard [invention] Therefore, one of the objects of the present invention is to provide a material without cutting The method of the parts of the substrate; another object of the invention is to effectively process the thin substrate and the thick substrate and enable direct and random shaped cutting of the substrate. Still another object of the present invention is to avoid the sinking of any debris material that is released during the cutting process. Further, the present invention is directed to obtaining a clean and flat surface within the cutting zone and preventing microcracking along the cutting boundary. Still another object of the present invention is to provide a cutting-material method. It is yet another object of the present invention to provide a method of regular cutting that is easy to perform and that allows for the obtaining of materials of different thicknesses. All of these objects are solved by a method of (d)-substrate-based, which comprises the steps of: a) providing a substrate to be cut, b) by self! Applying an AC voltage and a current to a defined area of the substrate at one of the frequencies in the range of kHz to 10 GHz, applying energy and thermal energy to the substrate via one or more electrodes connected to an AC voltage source ' Thereby heating the defined region, c) cooling the defined region, d) wherein during the step b), the defined region is moved by i) relative to the substrate, ii) relative to The (etc.) electrode moves the substrate, or
Hi)使該（等）電極及該基板兩者相對於彼此移動而沿 著该基板表面上的一路徑移動， 153645.doc 201232648 ’但完全或部分 以建立一閉合電 且其中該路徑並不沿著該基板之一邊緣 橫向該基板。 在一實施例中，該基板作為一相對電極 路0 >在-實施财…相對電極係放置於待切割之該基板之 该相對側上以建立一閉合電路。 在一實施例中，該相對電極被接地。 在-實施例中，步驟b)表現出電弧形成於該（等）電極與 該經界定區域之間，其中，較佳地，電弧係用於切割該基 通常，電流需要-閉合回路以供流動。如本文中所使用 =用》。「電路」意欲指示—電網路，其具有給定流動之電 机返回路徑之一閉合回路。在此等實施例中，該基板作 2回路之—部分。因此，離開AC(高電Μ高頻）電源之電 ⑽動穿過該電極、形成於電極與基板之間的該電弧及該 身回到該電源。在此等實施例中，該基板藉此作為 一相對電極及返回路徑。設備可藉由將該AC電源接地而 .〆簡化。此谷許忽略自該基板導引回到該電源之一專 導路彳二（例如電線等等）^因此，該基板可恰放置於與 接地相關的任何部分上。 σ之對於厚材料而言，僅使用一電極有時可引起該 基板内之一石斜y, 宁％且非均質加熱，此使在增加厚度下切割 更加困難。為砝也册丄 马確保電流均等地流動穿過該基板的整個厚 度’在一也會始么丨& 一夏她例中’使用提供接地之一專用返回路徑之 I53645.doc 201232648 一相對電極。此方式可大幅減少經由該基板流動回到該電 源之電流。不期望受任何理論約束，此方式可針對切割而 促進兩種積極效果：一電弧可形成於該基板之兩側上， 致使藉由來自兩側之外部熱量來加熱該基板；及（2)該基板 内的電場增加，因為其可接近£=(施加的電壓）除以（基板厚 度）。此進一步增加因介電損失之内部加熱。 此外，該等電極之對準容許分別在一定程度下控制穿過 该基板之電流路徑及加熱。 在貫施例中，該基板的加熱係藉由調整該AC電壓及/ 或電流之頻率及/或振幅及/或該（等）電極至該基板之距離 而控制。 不期望受任何理論約束，因介電損失現象而在該基板内 消散的功率為Hi) moving the (etc.) electrode and the substrate relative to each other to move along a path on the surface of the substrate, 153645.doc 201232648 'but completely or partially to establish a closed electrical and wherein the path does not One of the edges of the substrate is lateral to the substrate. In one embodiment, the substrate is placed as an opposite electrode path on the opposite side of the substrate to be cut to establish a closed circuit. In an embodiment, the opposing electrode is grounded. In an embodiment, step b) exhibits an arc formed between the (equal) electrode and the defined region, wherein preferably, the arc is used to cut the base. Typically, the current requires a closed loop for flow. . As used in this article = use. "Circuit" is intended to indicate a grid path that has a closed loop of one of the motor return paths for a given flow. In these embodiments, the substrate is part of a 2-circuit. Therefore, the electricity (10) leaving the AC (high-frequency, high-frequency) power source moves through the electrode, the arc formed between the electrode and the substrate, and the body returns to the power source. In such embodiments, the substrate serves as an opposing electrode and return path. The device can be simplified by grounding the AC power supply. This valley neglects to guide the substrate back to one of the power supply channels (e.g., wires, etc.) from the substrate. Therefore, the substrate can be placed on any portion associated with the ground. σ For thick materials, the use of only one electrode can sometimes cause a stone in the substrate to be y, ny% and non-homogeneously heated, which makes cutting at increased thickness more difficult. For the 砝 丄 丄 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保 确保. This approach greatly reduces the current flowing back to the power supply through the substrate. Without wishing to be bound by any theory, this approach may promote two positive effects for cutting: an arc may be formed on both sides of the substrate such that the substrate is heated by external heat from both sides; and (2) the The electric field within the substrate increases because it is close to £=(applied voltage) divided by (substrate thickness). This further increases internal heating due to dielectric loss. In addition, the alignment of the electrodes allows control of the current path and heating through the substrate to some extent, respectively. In one embodiment, the heating of the substrate is controlled by adjusting the frequency and/or amplitude of the AC voltage and/or current and/or the distance of the electrode from the substrate to the substrate. Without wishing to be bound by any theory, the power dissipated in the substrate due to dielectric loss is
Pin=srs0 tan5 ω E2 此定義用於㈣之使用者可控制參數：⑴提高頻率①增 加加熱’容許-更快加熱及因此可能更快切割或更厚材料 之切割。其亦提供補償對切割不起作用之介電參數之方 式’諸如例如低介電損失正切及“。⑺提高電壓振幅亦 增加介電損失及因此切割行為。 因為由該電弧自外側加熱亦可對切割起作用故修改立 強度會影響到該切割。該電弧取決於施加的電麼、電二 頻率、該電極至該基板之距離。取決於該基板材m 變此等參數以定義最佳切割條件。 在一實施例中，為了執行步_，該（等）電極係在該基 J53645.doc 201232648 板之一側或兩側上放置於距該基板〇 mm至100 mm之一距 離處。 該基板内之熱量分佈可藉由使用距該基板之不同電極距 離而控制。因為該電弧取決於該電極距離，故由該電弧加 熱該基板將在兩側上不同，此接著由該基板内之垂直溫度 分佈反映。 在一貫細例中，步驟b)係藉由施加一電壓而執行，其具 有自10 V至ΙΟ7 V、較佳自1〇〇 ¥至1〇6 v、更佳自1〇〇 V至 10 V之範圍内之一振幅及自i四2至1〇 GHz、較佳自⑺ kHz至1 GHz '更佳自10〇 ]^2至1〇〇 MHz之一範圍内之一 頻率。 在一實施例中，該電弧的性質係藉由舉 …巴、較佳心。巴之範圍内之一壓力下= 氣、氬氣或六氟化硫改變圍繞該（等）電極及該基板之氛圍 而控制。 修改周圍氛圍之組成物及壓力容許控制該電弧之形狀及 /見度以及該電弧接觸的該區域之形狀及大小。 在-實施例中，在步驟e)中，該經界^區域係根據任何 下列方法冷卻： i)被動地透過與周圍環境之熱傳導及/或對流， Π)附接該基板至可有效吸收熱量之—元件，該元件可視 情況用作為主動加熱泵（舉例而言一帕耳帖元件）， 叫藉由施加-氣體、一液體、氣體與液體之一混合物 或氣體與固體之-混合物至該經界定區域附近或直接至該 153645.doc 201232648 經界定區域而主動冷卻。不期望受任何理論約束，本發明 者假定切割歸因於沿著該切割路徑之熱梯度。當—先前經 加熱區域再次冷卻時發生之機械張力分別引起破裂及切 割。可藉由促進此等預加熱區域之冷卻而增強此等熱梯 度，藉此亦增強導致機械張力之裂痕。在最簡單情況下， 冷卻因自該預加熱區域至該基板之剩餘大部内之簡單熱傳 導而發生。然而，可使用更複雜冷卻方案：〇)藉由歸因於 附接一大儲熱器至該基板之被動冷卻而增加熱量移除；及 (2)使用例如熱泵或使用添加至該基板的一冷卻劑（例如氣 體或液體流）主動冷卻《藉由局部化此等冷卻輔助之施 加’可更準確界定該基板内之該分離區域。 在一貫施例中’該方法進一步包括步驟： a2)在步驟b)之前冷卻該經界定區域。 為了改良切割效能（如由切割速度、切割準確度量測）’ 可使用一預冷卻步驟a2)，具有兩個主要效果：（丨）該材料 的脆性及因此其破裂趨勢增加；及（2)可達成之最大熱梯度 可增加。再次不期望受任何理論約束，此據信係歸因於該 基板内的最大T受限’通常，因為通常不再發生 切割之事實。因此，在一較低T下起始該製程容許較高梯 度。 在一實施例中，在步驟a2)中，該經界定區域係根據如 上文所述之任何該等方法i)至iii)冷卻。 在一實施例中’該冷卻（較佳地該主動冷卻）係在該基板 上沿著與該經界定區域移動相同之路徑移動。 153645.doc 201232648 在一實施例中，該主叙、人，、 王動冷郃係經由定位於距該（等）電 之一固定距離處之一個弋夕， s夕個喷嘴施加，且其中該基板上 之該冷卻之移動係藉由 1)相對於該基板移動該（等）噴嘴， ii)相對於該（等）喷嘴移動該基板，或 iii)使移動該（等）喷嘴及該 成。 基板兩者相對於彼此 而達 在-實施财’在步_之前，該基板内之張力係沿著 其中意欲執行切割之該路徑⑽或減少。在本文t，沿著 該路徑之此張力引起或減少有時亦可稱為「多通製程」°。 此多通製程容許引進切割之—較佳路徑，尤其對於已具 有高内部張力之基㈣很重要的，其可以此方式來予以補 償。 在一實施例中，該AC電壓源係一高壓高頻裝置，其可 產生具有自10 V至107v、較佳自1〇〇 乂至1〇6 V、更佳自 100 V至105 V之範圍内之一振幅及自i ]^2至1〇 GHz、較 佳自10 kHz至1 GHz、更佳自100 kHz至100 MHz之一範圍 内之一頻率之一 AC電壓。 在一貫施例令，該尚壓高頻裝置係選自諧振變壓器（諸 如一特斯拉（Tesla)變壓器、返驰變壓器）、高功率射頻產 生器、及基於半導體的高頻固態斷路器。 在一實施例中，該高壓高頻裝置係連接至由較佳具有高 熔點、低電阻的任何導電材料（如貴金屬，舉例而言雀巴、 翻或金）製成的一個或多個電極。 153645.doc 201232648 為了可靠的切割效能，用於電壓施加的該等電極必須穩 定。抗氧化之高溶化丁材,料為較佳。如一實例，如、μ 之貴金屬具有此等性質。 在一實施例中，該（等）電極具有1至300 mm '較佳自2至 ⑽_、更佳自3至5〇 _之範圍内之一長度及〇1至2〇 腿、較佳自0.2至10職、更佳自〇 4至4咖之範圍内之一 平均直徑。 為減少浪漏電流及因此功率損失，電極應儘可能短。在 另一方面，較長電極提供較佳處置及自該熱的區域之熱量 分離。因此，實際電極長度及厚度係主要取決於所使用的 功率及頻率之一折衷。 在貫施例中，該（等）電極具有1 μιη至5 mm、較佳自1 〇 μιη至1 mm、更佳自2〇 μιη至〇.5 範圍内之一曲率之一 尖端。 不期望受任何理論約束，發明者已觀察到具有一鋒利電 極大端較佳界定其中該電弧發源之部位。因此，此對於可 靠操作為重要。 在一實施例中，該基板係由一電絕緣材料，諸如玻璃 (例如硬化玻璃、離子處理玻璃、強化玻璃、石英玻璃、 石英、鑽石、氧化鋁、藍寶石、氮化鋁、氧化錯、尖晶 石、陶曼）、半導電材料，諸如矽（包含摻雜矽及晶體石夕）、 鍺、化合物半導體（諸如砷化鎵及磷化銦）製成。 在一貫施例中’一側或兩側上的該基板已附接有具有一 導電材料（諸如氧化銦錫（ITO))或非導電材料（諸如金屬氧 153645.doc -10- 201232648 化物）之一額外層。 在一實施财，電壓及功率係根據該基板之電性質及物 理性質（如相對電容率、導電率、熱膨脹係數、厚度）而調 整。 不期望受任何理論約束，該基板中的熱消散為 Ρΐη=εΓε〇 tan5 ω Ε2 溫度增加與pin成比例：dT=(Pin/pc)dt。 最佳切割條件通常需要—經定義熱量進入dT/dt。因 此，為調適⑴材料性質（例如ε、tanS、p、c)、⑺速度（反 比例於dt)及(3)幾何參數(例如厚度），通常必需的是設定電 壓及因此設定頻率。因為在該製程期間橫越該基板之電壓 降亦取決於其T(其由該切割製程改變定義），故使用具有 一特定阻抗之一電壓源可為必需。 在一實施例中，具有一變壓器驅動電路之一諧振變壓器 係用作AC電壓源，且該基板係該閉合電路之一部分並影 響忒閉合電路之諧振頻率，使得該變壓器驅動電路之頻率 係根據該基板之物理性質（諸如其尺寸及介電性質）而調 整。 通常，一諧振變壓器藉由以或接近其諧振頻率來驅動該 次級變塵器線圈而工作。使該基板置於此次級線圈之兩端 之間將改變其諧振頻率及因此驅動該線圈必需之頻率。諧 振頻率之變化取決於該基板之介電性質及幾何性質且為了 最佳操作可需要相對應調整該驅動器。 在一實施例中，一諧振變壓器係用作藉由經設定以匹配 153645.doc 201232648 如上文所述的該電路諧振之一固定頻率驅動的AC電壓 源。 驅動該諧振變屋器之該電路可以便於獲得該變麼器之固 有頻率或諧振頻率之—方式設計。此將容許該電源之一自 動《周4即使例如材料或幾何基板參數變化。 在一實施例中，—諧振變壓器係用作AC電壓源，其以 偏離於諧振頻率之一頻率驅動以便控制該電弧的性質以及 該基板内的介電損失。 右切割發生之條件未顯著變化，則可使用該電壓源之一 固定頻率。此亦容許藉由頻率選擇而控制該電弧行為以及 該基板之聚焦及加熱。 在-實施财，在步驟b)期間，該經界定區域内的基板 材料未熔化且未自該經界定區域移除或排出。 在一實施例中，在步_期間，該經界定區域内的基板 材料炫化及/或自該經界定區域移除。 在一實施例中，該路徑係—直線、-曲線一斜角線、 -封閉線或前述之任何組合，該路徑界定在何處切割該基 板0 在一實施例中，該基板之分離（較佳沿著該路徑）係藉】 施加一機械壓縮或張力至該基板而控制。 不期望受任何理論約束，本發明者相信切割因引起^ 破裂/分離之張力之引進而發生。具有外部引進的其他; 力之此等張力之-重疊提供該切割路徑之_較佳控制之_ 法。此可舉例而言藉由按壓或拉動該基板、施加力至其; 153645.doc •12- 201232648 界而實現。 在一實施例中，在步驟b)之前，一第一破裂前驅體（如 一第一人造裂痕）係引進入該基板内，且步驟…係在該第— 破裂前驅體處起始。 在一實施例中，在步驟b)之前，一第二破裂前驅體（如 一第二人造裂痕）係引進入該基板内，且步驟b)係經執行使 得該分離路徑結束通過該第二破裂前驅體（例如第二人造 裂痕）。 為提供導引給切割之最後部分，一人造破裂前驅體可引 進於切割之最後部分中。此破裂前驅體可藉由例如使用相 較於該基板自身較硬之一鋒利元件機械地到擦該基板而獲 得。 在一實施例十，該經界定區域沿著該基板表面上的該路 徑之移動及該基板上的該冷卻之移動以自〇 〇 1 mm/s至 10000 mm/s之範圍内之一速度發生。 在實施例中，該經界定區域沿著該基板表面上的該路 视之移動在該基板之分離之一初始部分及一最後部分中減 緩’以便改良此等部分中的分離之品質。 在一實施例中，功率及/或電壓及/或頻率係經調整以便 補償切割之該初始部分及最後部分中的降低速度，舉例而 言保持一恆定速度/功率比率。 特定言之在切割期間之機械應力條件在該基板之大部分 與其緣區域之間不同。為補償切割期間的此等變化，可能 必需的是改變速度及切割功率。一實例為切割起始之速度 J53645.doc •13· 201232648 及功率之斜升及當接近該切割路徑之該端時兩參數之斜 降。 本發明之該等目的亦由用於執行根據本發明之該方法之 一裝置解決，該裝置包括： a) —AC電壓源，其可在自！ Μζ至1〇 QHz之範圍内之— 頻率下施加自1〇¥至107¥之範圍内之一電壓， b) 連接至該AC電壓源的一第一電極， c) 固持待切割之一基板並暴露該基板之一側於該第—電 極之固持構件， d) 視情況，經配置於距該電極之—固线離處以用於冷 卻5亥基板的冷卻構件， e) 視情況與該冷卻構件（若存在）結合而使該電極及該其 板相對於彼此移動之構件， ° 土 f) 控制a)、d)(若存在）及e)之控制構件， g) 視情況放置於該基板之該相對側上的一相對電極， h) 視情況放置於該基板之該相對側上的一冷卻喷嘴。 應注意a)至c)及e)至〇為強制的，而十似啦可選且 獨立存在於某些實施例辛。 在一實施例中，該AC電壓源包括驅動—功率級之_頻 率產生器、連接至該功率級的—譜振變壓器之__初級線圈 (作為-特斯拉產生器）、連接至該第一電極的該譜振變壓 器之-次級線圈及控制/設^該譜振變壓器之功率 一回饋機構。 在一實施例中 根據本發明之該裝置進一 步包括可移動 153645.doc •14· 201232648 χ等固持構件固持的該（等）電極及/或一基板之一數字控 制設備、及一監視照相機。 在貫施例中，該等控制構件亦由該監視照相機及該數 字控制②備控制如上文所定義的該方法之效能。 【實施方式】 通常在引進熱梯度至該基板之後，待切割之該基板服 從分離。 應/主意由根據本發明之該方法達成之切割可相對於該基 板之忒表面垂直。然而，在其他實施例中，切割亦可成非 105°等等或<90°，諸如 90°(例如>90。，諸如 95。、1〇〇。 80 、70、60°等等）之一角度。本發明涵蓋形成於該基板 之該側面與該基板之該頂面或該底面之間之所有此等角 度。 如本文中所使用的用語「…係經施加至該經界定區域附 近」意欲指示施加該流至圍繞該經界定區域之一區域，該 區域為受步驟b)中提供的熱量影響的該區域。在一實施例 中，該區域具有0.001 cmj100 cm2、較佳自〇1咖2至1〇 cm、更佳自〇.1 cm2至（cm2之範圍内之一大小。然而，該 用S吾亦意欲包含直接施加該流至該經界定區域。 如本文中所使用的用言吾「該經界定區域附近」亦意欲指 示「受熱影響區域」並與之同義連用。 如本文中所使用的用語「特斯拉變壓器」及「特斯拉產 生器」在全文中互通使用。 在根據本發明之諸實施例中，—電壓係使用連接至一 I53645.doc -15- 201232648 A C電壓源的一電極施加至該基板，引起一電流流動至該 基板。通常，該電流在該基板上的一經界定點處（該點在 本文中亦稱為「經界定區域」，意指該基板上該電流進入 之該區域）進入該基板。在一實施例中，用於施加該電壓 及該電流至該基板上的該經界定區域之該電極係放置於距 該基板達0 mm至100 mm之範圍内之一距離處。若該電極 係放置於距該基板0 mm處’則此意指該電極與該基板接 觸。若該電極係放置於距該基板>〇 mm之一距離處，則此 思指該電極未直接接觸該基板。為了 一電流流動，一電狐 將形成。熟習此項技術者將在處於測定產生電弧形成必需 之該等參數之一位置以便在該經界定區域處起始一電流自 該電極至該基板之流動。 通常，在根據本發明之諸實施例中，施加一電流至該基 板將導致在該經界定區域處之該基板之一局部加熱。應注 意通常執行此加熱使得在該基板之該經界定區域内無材料 熔化發生，且亦無材料自該經界定區域移除或排出。該基 板之一局部熔化通常不利的是其將干擾切割形成。 在較佳實施例中，發生於步驟…之加熱係由先前提到的 施加一電流至該基板、更特定言之施加在自i让出至1〇 GHz之範圍内之-頻率下之—電流而達成。因&，在此等 實施例中，介電損失可促進該基板之加熱，增加該電弧承 載的效果。 在根據本發明之諸實施例中，該基板上的該經界定區域 係沿著該基板移動。此意指其中施加該電壓及因此其中該 153645.doc •16· 201232648 電々α /瓜動至该基板之該部位， 忑丞板非静止但移動。此移 動通常係由下列之—这志.Λ·&上 .. 幻之違成.⑴該電極相對於該基板之一移 動、（ii)該基板相對於該電極之一 电4灸移動或（1〗0該電極及該基 板兩者相對於彼此之-移動。通常，㈣移動沿著該基板 表面上的-路徑發生。接著，此路徑亦衫該基板被切割 之形狀。此路徑根據本發明並非沿著該基板之該等邊緣之 一者’但完全或至少部分橫越該基板。此路徑可為一直 線、一曲線、—斜角線或其亦可為一封閉線，舉例而言若 基板之-部件係自該基板内部切除則為後者。 根據本發明’該經界定區域内的該材料（儘管經加熱）通 常未熔化、自絲板單獨移除或排出。將發生之任何溶化 可干擾切割之精度及/或品質。 在根據本發明m例巾，步驟。)（即冷卻該經加熱經 界疋區域）由離開該進入區域之熱對流及/或傳導而被動發 生。在其他實施例中’冷卻主要由主動冷卻而發生。此主 動冷卻可藉由施加—氣流（諸如空氣、氣氣、氬氣）或-液 體流（諸如二氣甲炫、三氣甲規）或氣體與液體、氣霧劑之 一混合物之一流或氣體與固體之一混合物之一流（例如二 氧化碳乾冰）而達成。 較佳地，冷卻亦具有局部性質，即冷卻在該基板上沿著 與忒經界定區域移動之該路徑相同之路徑發生。此可舉例 而言藉由在相對於彼此之一固定距離處放置該電極及該冷 部構件（諸如一冷卻噴嘴）及藉由使該冷卻構件在此固定距 離下置於该電極後面而達成。然而，本發明者亦設想其中 153645.doc •17- 201232648 該冷卻裝置沿著該路徑在該電極之前之實施例。在此實施 例中，該經界定區域將首先被冷卻且隨後被加熱，且步驟 b)及c)的順序可有效反轉，而該經界定區域首先被冷卻， 且隨後透過施加一電壓及電流至該區域而加熱。亦存在其 中可能一冷卻步驟在加熱之前且另一冷卻步驟繼加熱之後 之實施例。所有此等情形由本發明者設想並被本發明涵 蓋。 通常，該電極（一電壓及電流係藉其施加至該基板）係放 置於该基板之一側上。在一些實施例中，可存在一第二電 極（即一相對電極）’其放置於該基板之該相對側上。此一 第二電極提供該第一電極之一電流返回路徑。 該經界定區域之移動以自〇 〇1 mm/s之範 圍内之-速度發生。如上文所概述，此移動係由該電極相 對於該基板或該基板相對於該電極之—移動、或兩者相對 於彼此之-移動而達成。因&，該電極與該基板之間之相 對速度亦應在自0.01 „1111/5至10000 mm/s之範圍内且該 移動之該路徑可具有任何曲率半徑，自0(角度)達無窮⑷ 變化，包含任何可能之修圓輪廓。 通常，所施加之該電壓係在自1〇2 ¥至1〇7 V之範圍内並 具有自1他至10 GHz之範圍内之一頻率。0此施加的該 高頻率導致⑴該基板内部之介電損失及⑺通常由一電弧 表現的一電流，該電弧接著在該基板之該經界定區域處加 熱該基板。 不期望受任何理論約束’本發明者相信進人該基板内之 153645.doc •18- 201232648 熱里包含该基板中的機械張力，因此使經界定區域之該路 徑可經得起受控的破損或受控的分離。效果可如上文所述 藉由提高導③張力透過額外冷卻之該等溫度梯&而進—步 改良；此冷卻可發生於局部加熱之前或之後或兩者。 受控洩漏及分離亦可由額外機械方法（諸如由合適構 件，諸如合適拉動或抓持構件亦或超音波設備引起的機械 應力）支援。 在根據本發明之諸實施例中，該電極/該冷卻構件相對 於該基板之相對移動可經由局部或遙控操作之數字控制設 備而發生。用於執行根據本發明之該方法之整個設備可使 用-合適電腦系統(諸如經裝備具有一合適輸入，輸出介面 的個人電腦）、或連接至用於該基板及/或該電極移動之 控制之^:子控制設備的—單機控制裝置或前述之一組合 而控制&上文進一步概述，用於冷卻之該等構件較佳係 連同、X電極相對於絲板移動。此係舉例而言藉由保持用 於冷部之㈣件在距該電極之—固定距離處（通常在自0 1 mm至100mm之範圍内）而達成。 根據本發明為合谪之古 ^ 迥之有用尚壓高頻裝置諸如特斯拉變壓 器、返馳變壓器、宾Λ 间力率射頻產生器及基於半導體的高頻 固態斷路器。 务月亦叹心種用於執行根據本發明之該方法之裝 置。此裝置包括 a) AC電壓源、’其可在自1 kHz至10 GHZ之範圍内之一 頻率下施加自10、至1〇、之範圍内之一電壓， 153645.doc -19· 201232648 b) 連接至s亥AC電壓源的一第一電極， c) 固持待切割之一基板並暴露該基板之一側於該第一電 極之固持構件， d) 視情況，經配置於距該電極之一固定距離處以用於冷 卻該基板的冷卻構件， e) 與該冷卻構件結合而使該電極及該基板相對於彼此移 動之構件， f) 控制a)、d)及e)之控制構件， g) 視情況用於放置於該基板之該相對側上之一相對電 極， h) 視情況放置於該基板之該相對側上的—冷卻喷嘴。 若該冷卻喷嘴或該相對電極係放置於該基板之「該相對 側」上，則此通常為相對於其中該第一電極所放置之該 側。 發明者已發現藉由使用由—高頻電壓源提供的電能局部 加熱一材料，可誘發引起該材料之受控分離之熱張力。發 月者進纟觀察到藉由沿著一預定義路經施加此加熱，該 材料可以一經界定方式切割。 在本發明之諸實施例中，該基板内之電能及/或熱能之 局邛引進可藉由放置連接至一高頻高壓源的一電極使之鄰 近於待切割之該區域而發生H經界定切割可藉由相 對於該基㈣動該電極並因此移動該f流進人該基板之該 4位而引進。此移動可藉由移動該電極自身或相對於該電 極移動該基板或藉由移_者而獲得。加熱主要因⑴該基 153645.doc •20· 201232648 板内的介電損失及（2)來自形成於該（等）電極與該基板之間 之該電弧之熱傳遞而發生。歸因於高頻現象（諸如流動橫 越一非導電基板之電容性電流），熱量可僅使用一電極而 該基板直接或間接連接至接地或藉由使用直接或間接（例 如經由一電谷器）連接至接地的另一電極而引進。該電極 可以使知·該電流及因此該基板内之加熱依循由使用者決定 的一較佳路徑之一方式放置。在一實施例中，所施加之該 電壓具有自10 V至107v、較佳自100 V至106 V、更佳自 100 V至1 〇5 V之範圍内之一振幅。此外在一實施例中，該 電壓源係具有自1 kHz至10 GHz、較佳自1 〇 kHz至1 GHz、 更佳自100 kHz至100 MHz之範圍内之一頻率之一高頻電壓 產生器。在一實施例中，該施加的電壓具有自1 kHz至1 〇 GHz、較佳自 1〇 kHz至 1 GHz、更佳自 1〇〇 kHz至 100 MHz 之範圍内之一頻率。此等參數可經調整使得平均電流自 10 9 A至ΙΟ3 A、更佳自1〇-7八至1〇2 A、更佳自1〇-5至丄八變 化。 此等高壓及高頻率舉例而言可使用一特斯拉變壓器或可 匹配該等規格之任何其他高頻高壓供應而產生。此電壓供 應可根據輸出電壓、頻率、電流、阻抗而調諧。該電極與 6亥基板之間之工作距離影響加熱點之幾何，因此控制該基 板之δ亥經加熱區域之空間熱分佈。在一實施例中，該電極 與該基板之該表面之間之該距離係自〇 mm(接觸）至1〇 cm、較佳自〇 ^:^至10 mm、更佳自〇 〇5 mm至5爪爪變化。 改變該（等）電極相對於該表面之相對速度，可能調諧進 153645.doc •21- 201232648 入該基板内並因此加熱該基板之熱能及電能之數量。該電 極與該表面相對於彼此移動之速度通常自〇 〇1 mm/s至 10000 mm/s、較佳自（Umm/s、更佳自1 mm/s 至10 mm/s變化。 在根據本發明之該方法及該裝置中，根據本發明之該電 極可採用任何形狀，但較佳具有指向該基板之該表面之一 尖角形狀。此電極可由各種材料製成；已發現具有高熔點 之貴金屬（例如鉑或鈀）尤其有效。 作為高頻高電壓電源供應，可使用一特斯拉變壓器。初 級線圈可由上至100匝、較佳1至1〇匝、更佳1至2匝組成， 此可以具有自5 1!1111至1〇〇〇 mm、較佳自1〇爪爪至1〇〇 、 更佳自10 mm至60 mm變化之一直徑之平坦或螺旋形狀實 現。此等匝數可由呈電線/膠帶形式或呈經沈積層之形式 之固體導電材料（例如銅、鋁、貴金屬）獲得。次級線圈可 由具有自0.01 mm至10 mm、較佳自0.05 mm至5 mm、更佳 自〇_1 mm至1 mm變化之一直徑之一導電線獲得，並可具 有自10至105匝、較佳自50至104匝、更佳自6〇至1〇〇〇匝變 化之匝數。此次級繞組可放置於不同但通常相對於初級繞 組同心的位置：初級繞組上方、初級繞組内或恰接近於初 級繞組。 所使用的一例示性設備由一高頻特斯拉變壓器組成，其 具有使用具有ca 20 mm之一直徑之一印刷電路板圖案化而 以平坦形狀實現的1至2匝之一初級線圈。！ 〇〇至3〇〇匝之該 次級繞組係由具有自〇·〗mm至0.5 mm變化之一直徑之銅線 153645.doc •22- 201232648Pin=srs0 tan5 ω E2 This definition is used for user-controllable parameters of (iv): (1) increase frequency 1 increase heating 'allow' - faster heating and therefore may cut faster or thicker materials. It also provides means to compensate for dielectric parameters that are ineffective for cutting, such as, for example, low dielectric loss tangent and ". (7) Increasing the voltage amplitude also increases the dielectric loss and hence the cutting behavior. The cutting acts so that the modified strength affects the cutting. The arc depends on the applied electricity, the electrical frequency, and the distance from the electrode to the substrate. Depending on the substrate m, these parameters are varied to define the optimal cutting conditions. In one embodiment, in order to perform step_, the (etc.) electrode is placed on one side or both sides of the substrate J53645.doc 201232648 at a distance of 〇mm to 100 mm from the substrate. The heat distribution within can be controlled by using different electrode distances from the substrate. Because the arc depends on the electrode distance, heating the substrate by the arc will be different on both sides, followed by the vertical temperature within the substrate. Distribution reflection. In a consistent example, step b) is performed by applying a voltage having from 10 V to ΙΟ7 V, preferably from 1 〇〇 to 1 〇 6 v, more preferably from 1 〇〇V. Up to 10 V One of the amplitudes and a frequency from i 4 2 to 1 GHz, preferably from (7) kHz to 1 GHz 'more preferably from one of 10 〇 2 2 to 1 〇〇 MHz. In an embodiment The nature of the arc is controlled by a bar, preferably a pressure within one of the ranges of bar = gas, argon or sulfur hexafluoride, varying around the (and other) electrodes and the atmosphere of the substrate. The composition and pressure of the surrounding atmosphere allow control of the shape and/or visibility of the arc and the shape and size of the region in contact with the arc. In an embodiment, in step e), the boundary region is based on any of the following Method cooling: i) passively transmitting heat and/or convection through the surrounding environment, Π) attaching the substrate to an element that can effectively absorb heat, which element can be used as an active heat pump (for example, a Peltier) Element), called by applying - gas, a liquid, a mixture of a gas and a liquid, or a mixture of a gas and a solid to the vicinity of the defined area or directly to the defined area of the 153645.doc 201232648. Any theoretical constraint, the invention It is assumed that the cutting is attributed to the thermal gradient along the cutting path. The mechanical tension that occurs when the previously heated region is again cooled causes cracking and cutting, respectively. This heat can be enhanced by promoting cooling of such preheating regions. Gradient, thereby also enhancing cracks that cause mechanical tension. In the simplest case, cooling occurs due to simple heat transfer from the preheating zone to the remainder of the substrate. However, a more complex cooling scheme can be used: Adding heat removal by passive cooling due to attachment of a large heat reservoir to the substrate; and (2) actively cooling using, for example, a heat pump or using a coolant (eg, a gas or liquid stream) added to the substrate By localizing the application of such cooling aids, the separation region within the substrate can be more accurately defined. In a consistent embodiment, the method further comprises the step of: a2) cooling the defined area prior to step b). In order to improve the cutting efficiency (as measured by cutting speed, accurate cutting), a pre-cooling step a2 can be used, which has two main effects: (丨) the brittleness of the material and thus its tendency to crack; and (2) The maximum thermal gradient that can be achieved can be increased. Again, it is not expected to be bound by any theory, which is believed to be due to the fact that the maximum T within the substrate is limited 'generally because the cutting is usually no longer occurring. Therefore, starting the process at a lower T allows for a higher gradient. In an embodiment, in step a2), the defined zone is cooled according to any of the methods i) to iii) as described above. In one embodiment, the cooling (preferably the active cooling) is moved on the substrate along the same path as the defined region. 153645.doc 201232648 In one embodiment, the main, human, and kinetic cold sputum is applied via a nozzle located at a fixed distance from the (equal) electric power, and wherein The cooling movement on the substrate is performed by 1) moving the nozzle relative to the substrate, ii) moving the substrate relative to the nozzle, or iii) moving the nozzle and the assembly. The substrate is brought up with respect to each other, and the tension in the substrate is along the path (10) or reduction in which the cutting is intended to be performed. At this point t, this tension caused or decreased along the path may also be referred to as a "multi-pass process". This multi-pass process allows the introduction of a cutting-optimal path, especially for bases that already have a high internal tension (4), which can be compensated in this way. In one embodiment, the AC voltage source is a high voltage high frequency device that can have a range from 10 V to 107 V, preferably from 1 〇〇乂 to 1 〇 6 V, more preferably from 100 V to 105 V. One of the amplitudes and an AC voltage from one of the range of i ]^2 to 1 GHz, preferably from 10 kHz to 1 GHz, more preferably from one of 100 kHz to 100 MHz. In a consistent practice, the high voltage device is selected from the group consisting of a resonant transformer (such as a Tesla transformer, a flyback transformer), a high power RF generator, and a semiconductor based high frequency solid state circuit breaker. In one embodiment, the high voltage, high frequency device is coupled to one or more electrodes made of any electrically conductive material (e.g., a noble metal such as a finch, flip or gold) that preferably has a high melting point and low electrical resistance. 153645.doc 201232648 For reliable cutting performance, the electrodes used for voltage application must be stable. It is preferred to use an oxidation-resistant, highly soluble butadiene material. As an example, noble metals such as μ have such properties. In one embodiment, the (equal) electrode has a length of from 1 to 300 mm' preferably from 2 to (10) _, more preferably from 3 to 5 〇 _ and a length of from 1 to 2 〇 leg, preferably from 0.2. The average diameter of one of the range of 4 to 4, preferably from 4 to 4 coffee. To reduce leakage current and therefore power loss, the electrodes should be as short as possible. On the other hand, longer electrodes provide better handling and heat separation from the hot zone. Therefore, the actual electrode length and thickness are primarily dependent on one of the power and frequency tradeoffs. In one embodiment, the (etc.) electrode has one of the curvatures from 1 μm to 5 mm, preferably from 1 〇 μηη to 1 mm, more preferably from 2 〇 μιη to 〇.5. Without wishing to be bound by any theory, the inventors have observed that having a sharp electrical terminal preferably defines where the arc originates. Therefore, this is important for reliable operation. In one embodiment, the substrate is made of an electrically insulating material such as glass (eg, hardened glass, ion treated glass, tempered glass, quartz glass, quartz, diamond, alumina, sapphire, aluminum nitride, oxidized, spinel) Stone, Taman), semi-conducting materials, such as germanium (including doped germanium and crystal litters), germanium, compound semiconductors (such as gallium arsenide and indium phosphide). In a consistent embodiment, the substrate on one or both sides has been attached with a conductive material (such as indium tin oxide (ITO)) or a non-conductive material (such as metal oxide 153645.doc -10- 201232648). An extra layer. In one implementation, the voltage and power are adjusted based on the electrical and physical properties of the substrate (e.g., relative permittivity, electrical conductivity, coefficient of thermal expansion, thickness). Without wishing to be bound by any theory, the heat dissipation in the substrate is Ρΐη=εΓε〇 tan5 ω Ε2 The temperature increase is proportional to pin: dT=(Pin/pc)dt. Optimal cutting conditions usually require - defined heat into dT/dt. Therefore, in order to adapt (1) material properties (e.g., ε, tanS, p, c), (7) velocity (reverse to dt), and (3) geometric parameters (e.g., thickness), it is generally necessary to set the voltage and thus the set frequency. Since the voltage drop across the substrate during the process is also dependent on its T (which is defined by the cutting process change), it may be necessary to use a voltage source having a particular impedance. In one embodiment, a resonant transformer having a transformer drive circuit is used as an AC voltage source, and the substrate is part of the closed circuit and affects the resonant frequency of the closed circuit, such that the frequency of the transformer drive circuit is based on The physical properties of the substrate, such as its size and dielectric properties, are adjusted. Typically, a resonant transformer operates by driving the secondary duster coil at or near its resonant frequency. Placing the substrate between the ends of the secondary coil will change its resonant frequency and hence the frequency necessary to drive the coil. The variation of the resonant frequency depends on the dielectric properties and geometric properties of the substrate and the driver may need to be adjusted for optimal operation. In one embodiment, a resonant transformer is used as an AC voltage source driven by a fixed frequency that is set to match the circuit resonance of 153645.doc 201232648 as described above. The circuit that drives the resonant variator can facilitate the design of the inherent frequency or resonant frequency of the variator. This will allow one of the power supplies to automatically "week 4 even if material or geometric substrate parameters change. In one embodiment, the resonant transformer is used as an AC voltage source that is driven at a frequency that is offset from one of the resonant frequencies to control the nature of the arc and the dielectric loss within the substrate. If the condition of the right cut does not change significantly, one of the voltage sources can be used to fix the frequency. This also allows control of the arcing behavior as well as focusing and heating of the substrate by frequency selection. In the implementation, during step b), the substrate material within the defined region is not melted and is not removed or discharged from the defined region. In an embodiment, during step _, the substrate material within the defined region is dazzled and/or removed from the defined region. In one embodiment, the path is a line, a curve, a bevel line, a closed line, or any combination of the foregoing, the path defining where the substrate is cut. In one embodiment, the substrate is separated (more Good along this path) is controlled by applying a mechanical compression or tension to the substrate. Without wishing to be bound by any theory, the inventors believe that the cutting occurs due to the introduction of tension that causes cracking/separation. Others with external introductions; the overlap of the forces - the overlap provides the preferred method of the cutting path. This can be achieved, for example, by pressing or pulling the substrate and applying a force to it; 153645.doc •12-201232648. In one embodiment, prior to step b), a first rupture precursor (e.g., a first artificial crack) is introduced into the substrate and the step is initiated at the first rupture precursor. In one embodiment, prior to step b), a second rupture precursor (eg, a second artificial crack) is introduced into the substrate, and step b) is performed such that the separation path ends through the second rupture precursor Body (eg second artificial crack). To provide guidance to the final portion of the cut, an artificially fractured precursor can be introduced into the final portion of the cut. The rupture precursor can be obtained, for example, by mechanically rubbing the substrate with respect to one of the harder elements of the substrate itself. In a tenth embodiment, the movement of the defined region along the path on the surface of the substrate and the movement of the cooling on the substrate occur at a speed ranging from 1 mm/s to 10000 mm/s. . In an embodiment, the movement of the defined region along the surface of the substrate is reduced in an initial portion and a final portion of the separation of the substrate to improve the quality of the separation in the portions. In one embodiment, the power and/or voltage and/or frequency are adjusted to compensate for the rate of decrease in the initial and final portions of the cut, for example maintaining a constant speed/power ratio. In particular, the mechanical stress conditions during the dicing differ between a majority of the substrate and its edge regions. To compensate for these changes during cutting, it may be necessary to change the speed and cutting power. An example is the speed at which the cutting starts. J53645.doc •13·201232648 and the ramp up of the power and the slope of the two parameters as it approaches the end of the cutting path. These objects of the present invention are also solved by a device for performing the method according to the present invention, the device comprising: a) - an AC voltage source, which is available from! Μζ to a range of 1 〇 QHz—a voltage applied from a range of 1〇¥ to 107¥ at a frequency, b) a first electrode connected to the AC voltage source, c) holding a substrate to be cut and Exposing one of the substrates to the holding member of the first electrode, d) optionally, a cooling member disposed at a distance from the electrode to cool the substrate, e) as the case may be (if present) a member that combines to move the electrode and the plate relative to each other, ° f) control a), d) (if present) and e) control members, g) optionally placed on the substrate An opposite electrode on the opposite side, h) a cooling nozzle placed on the opposite side of the substrate as appropriate. It should be noted that a) to c) and e) to 〇 are mandatory, and ten are optional and exist independently in some embodiments. In one embodiment, the AC voltage source includes a drive-power stage_frequency generator, a __primary coil (as a Tesla generator) connected to the power stage's spectral transformer, connected to the first The electromagnet transformer of the one electrode is a secondary coil and a power-feedback mechanism for controlling/setting the spectral transformer. In one embodiment, the apparatus according to the present invention further includes a digital control device that moves the 153645.doc • 14· 201232648 固 holding member and/or a substrate, and a monitoring camera. In the embodiment, the control means is also controlled by the surveillance camera and the digital control 2 to control the performance of the method as defined above. [Embodiment] Usually, after the introduction of a thermal gradient to the substrate, the substrate to be cut is subjected to separation. It is desirable/intended that the cut achieved by the method according to the invention may be perpendicular to the surface of the substrate. However, in other embodiments, the cut may also be non-105° or the like or <90°, such as 90° (e.g., > 90., such as 95., 1〇〇. 80, 70, 60°, etc.) One angle. The present invention contemplates all such angles formed between the side of the substrate and the top or bottom surface of the substrate. The term "... applied to the vicinity of the defined area" as used herein is intended to indicate that the flow is applied to an area surrounding the defined area that is affected by the heat provided in step b). In one embodiment, the region has a size of 0.001 cmj100 cm2, preferably from 2 to 1 cm, more preferably from 1 cm2 to (cm2). However, the use of S is also intended Including the direct application of the flow to the defined area. As used herein, the term "near the defined area" is also intended to indicate and be used synonymously with the "heat affected area". As used herein, the term "special" "Slaer transformer" and "Tesla generator" are used interchangeably throughout. In embodiments in accordance with the invention, the voltage is applied to an electrode connected to an I53645.doc -15-201232648 AC voltage source to The substrate causes a current to flow to the substrate. Typically, the current is at a defined point on the substrate (this point is also referred to herein as a "defined region", meaning that the current on the substrate enters the region Entering the substrate. In one embodiment, the electrode system for applying the voltage and the current to the defined region on the substrate is placed at a distance of from 0 mm to 100 mm from the substrate If the electrode system Placed at 0 mm from the substrate, this means that the electrode is in contact with the substrate. If the electrode is placed at a distance from the substrate > 〇 mm, then the electrode is not directly in contact with the substrate. An electric fox will be formed for a current flow. Those skilled in the art will be in a position to determine one of the parameters necessary for arc formation to initiate a current flow from the electrode to the substrate at the defined region. Typically, in embodiments in accordance with the invention, applying a current to the substrate will result in localized heating of one of the substrates at the defined region. It should be noted that this heating is typically performed such that the defined region of the substrate No material melting occurs and no material is removed or discharged from the defined area. Local melting of one of the substrates is generally disadvantageous in that it would interfere with the formation of the cut. In a preferred embodiment, the heating system occurs in the step... It is achieved by the previously mentioned application of a current to the substrate, more specifically to the current at the frequency from i to 1 GHz. Since & In one example, dielectric loss can promote heating of the substrate, increasing the effect of the arc loading. In embodiments in accordance with the invention, the defined region on the substrate moves along the substrate. The voltage and thus the 153645.doc •16·201232648 々α / melon move to the part of the substrate, the slab is not stationary but moves. This movement is usually caused by the following - this zhi. Λ · & The illusion is violated. (1) the electrode moves relative to one of the substrates, (ii) the substrate moves with respect to one of the electrodes, or (1) the electrode and the substrate move relative to each other Typically, (d) movement occurs along the - path on the surface of the substrate. This path then ties the shape of the substrate being cut. This path is not along the one of the edges of the substrate in accordance with the present invention but completely or at least partially traverses the substrate. The path may be a straight line, a curve, an oblique line or it may also be a closed line, for example the latter if the component of the substrate is cut from the inside of the substrate. According to the invention, the material (although heated) in the defined area is typically unmelted, removed or discharged separately from the wire. Any melting that will occur can interfere with the precision and/or quality of the cut. In the case of the m example according to the invention, the steps. ) (i.e., cooling the heated boundary region) is passively generated by heat convection and/or conduction away from the entry region. In other embodiments 'cooling occurs primarily by active cooling. This active cooling may be by application of a gas stream (such as air, gas, argon) or - a liquid stream (such as a gas dioxin, a three gas gauge) or a mixture of a gas and a liquid, an aerosol or a gas. This is achieved by a stream of one of the mixture of solids, such as carbon dioxide dry ice. Preferably, the cooling also has the local nature that cooling occurs on the substrate along the same path as the path of the meandering defined area. This can be achieved, for example, by placing the electrode and the cold member (such as a cooling nozzle) at a fixed distance from one another and by placing the cooling member behind the electrode at this fixed distance. However, the inventors also contemplate embodiments in which the cooling device precedes the electrode along the path. 153645.doc • 17-201232648. In this embodiment, the defined region will be first cooled and subsequently heated, and the order of steps b) and c) can be effectively reversed, and the defined region is first cooled, and then applied with a voltage and current. Heat up to the area. There are also embodiments in which a cooling step may be preceded by heating and another cooling step followed by heating. All such circumstances are contemplated by the inventors and are encompassed by the present invention. Typically, the electrode (by which a voltage and current is applied to the substrate) is placed on one side of the substrate. In some embodiments, a second electrode (i.e., an opposing electrode) can be present that is placed on the opposite side of the substrate. The second electrode provides a current return path for the first electrode. The movement of the defined area occurs at a speed in the range of 〇 1 mm/s. As outlined above, this movement is achieved by the movement of the electrode relative to the substrate or the substrate relative to the electrode, or both. Because &, the relative velocity between the electrode and the substrate should also be in the range from 0.01 „1111/5 to 10000 mm/s and the path of the movement can have any radius of curvature, from 0 (angle) to infinity (4) Variations, including any possible rounding contours. Typically, the voltage applied is in the range from 1〇2 ¥ to 1〇7 V and has a frequency from 1 to 10 GHz. The high frequency applied results in (1) dielectric loss within the substrate and (7) a current typically represented by an arc that then heats the substrate at the defined region of the substrate. Without wishing to be bound by any theory. It is believed that the 153645.doc •18-201232648 in the substrate contains the mechanical tension in the substrate, thus allowing the path of the defined area to withstand controlled breakage or controlled separation. Further improvements are made by increasing the tension of the guide 3 through the additional cooling of the temperature ladder & the cooling may occur before or after local heating or both. The controlled leakage and separation may also be by additional mechanical means ( Such as Supporting the member, such as a suitable pulling or gripping member or mechanical stress caused by the ultrasonic device. In accordance with embodiments of the present invention, relative movement of the electrode/the cooling member relative to the substrate may be via local or remote control The digital control device occurs. The entire device for performing the method according to the present invention can be used - a suitable computer system (such as a personal computer equipped with a suitable input, output interface), or connected to the substrate and / Or control of the movement of the electrode: a stand-alone control device of the sub-control device or a combination of the foregoing and control & further outlined above, the components for cooling are preferably coupled together with the X-electrode moving relative to the wire plate This is achieved, for example, by keeping the (four) piece for the cold portion at a fixed distance from the electrode (usually in the range from 0 1 mm to 100 mm). According to the present invention, it is a combination of It is also useful for high-voltage devices such as Tesla transformers, flyback transformers, RF power generators, and semiconductor-based high-frequency solid-state circuit breakers. A device for performing the method according to the invention. The device comprises a) an AC voltage source, 'which can be applied from 10 to 1 at a frequency ranging from 1 kHz to 10 GHz. One of the voltages in the range, 153645.doc -19· 201232648 b) a first electrode connected to the shai AC voltage source, c) holding one of the substrates to be cut and exposing one of the substrates to the first electrode a member, d) a cooling member disposed at a fixed distance from one of the electrodes for cooling the substrate, e) a member coupled to the cooling member to move the electrode and the substrate relative to each other, f) Controlling components of a), d) and e), g) optionally for one of the opposite electrodes placed on the opposite side of the substrate, h) optionally placed on the opposite side of the substrate - cooling nozzle . If the cooling nozzle or the opposing electrode is placed on the "opposite side" of the substrate, this is typically relative to the side on which the first electrode is placed. The inventors have discovered that by locally heating a material using electrical energy provided by a high frequency voltage source, the thermal tension that causes controlled separation of the material can be induced. The stalker observed that by applying this heating along a predefined path, the material can be cut in a defined manner. In embodiments of the present invention, the introduction of electrical energy and/or thermal energy within the substrate can be defined by placing an electrode connected to a high frequency high voltage source adjacent to the region to be cut. The cutting can be introduced by moving the electrode relative to the substrate (4) and thus moving the f into the 4 positions of the substrate. This movement can be obtained by moving the electrode itself or moving the substrate relative to the electrode or by shifting it. The heating is mainly caused by (1) the dielectric loss in the substrate and (2) the heat transfer from the arc formed between the electrode and the substrate. Due to high frequency phenomena (such as capacitive currents flowing across a non-conducting substrate), heat can be used with only one electrode and the substrate is directly or indirectly connected to ground or used directly or indirectly (eg via an electric valley device) ) is connected to the other electrode of the ground to be introduced. The electrode can be placed such that the current and thus the heating within the substrate are placed in accordance with one of the preferred paths determined by the user. In one embodiment, the applied voltage has an amplitude in the range from 10 V to 107 v, preferably from 100 V to 106 V, more preferably from 100 V to 1 〇 5 V. Further in an embodiment, the voltage source is one of a high frequency voltage generator having a frequency from 1 kHz to 10 GHz, preferably from 1 kHz to 1 GHz, more preferably from 100 kHz to 100 MHz. . In one embodiment, the applied voltage has a frequency ranging from 1 kHz to 1 〇 GHz, preferably from 1 kHz to 1 GHz, more preferably from 1 kHz to 100 MHz. These parameters can be adjusted such that the average current varies from 10 9 A to ΙΟ 3 A, more preferably from 1 〇 -8 to 1 〇 2 A, more preferably from 1 〇 to 5 丄. Such high voltages and high frequencies can be produced, for example, using a Tesla transformer or any other high frequency, high voltage supply that can match these specifications. This voltage supply can be tuned based on output voltage, frequency, current, and impedance. The working distance between the electrode and the 6-well substrate affects the geometry of the heating point, thus controlling the spatial heat distribution of the AH-heated region of the substrate. In one embodiment, the distance between the electrode and the surface of the substrate is from 〇mm (contact) to 1〇cm, preferably from 〇^:10 to 10 mm, more preferably from 5 mm to 5 claws change. Varying the relative velocity of the electrode relative to the surface, it is possible to tune into the amount of thermal energy and electrical energy that enters the substrate and thus heats the substrate. The speed at which the electrode and the surface move relative to each other generally varies from 1 mm/s to 10000 mm/s, preferably from (Umm/s, more preferably from 1 mm/s to 10 mm/s. In the method of the invention and the apparatus, the electrode according to the present invention may take any shape, but preferably has a pointed shape directed to the surface of the substrate. The electrode may be made of various materials; it has been found to have a high melting point. A noble metal such as platinum or palladium is particularly effective. As a high-frequency high-voltage power supply, a Tesla transformer can be used. The primary coil can be composed of up to 100 匝, preferably 1 to 1 〇匝, more preferably 1 to 2 ,. This may be achieved with a flat or spiral shape of one diameter from 5 1! 1111 to 1 〇〇〇 mm, preferably from 1 〇 claw to 1 〇〇, more preferably from 10 mm to 60 mm. It can be obtained by a solid conductive material (for example, copper, aluminum, precious metal) in the form of a wire/tape or in the form of a deposited layer. The secondary coil can have a diameter of from 0.01 mm to 10 mm, preferably from 0.05 mm to 5 mm, more preferably. One of the diameters of one of the diameters from 〇_1 mm to 1 mm is obtained and can be There are turns from 10 to 105 匝, preferably from 50 to 104 匝, and more preferably from 6 〇 to 1 。. This secondary winding can be placed at a different but usually concentric with respect to the primary winding: primary Above the winding, in the primary winding or just close to the primary winding. An exemplary device used consists of a high frequency Tesla transformer with a printed circuit board patterned using one of ca 20 mm diameters to flatten The shape realizes one of the primary coils of 1 to 2 。. The 次级 to 3 〇〇匝 of the secondary winding is made of a copper wire having a diameter varying from 〇 mm to 0.5 mm. 153645.doc •22- 201232648
獲得，且該次級繞組係放置於該初級線圈内。作為電極， 始及把兩者用於具有〇·5 mm至2 mm之一直徑之一尖角桿 之形狀。驅動該初級線圈必需之功率電子器件係基於半導 體’該等半導體諸如用於低功率應用（上至5〇 W)單塊m〇s 閘極驅動器（諸如來自][XYSiIXDD414)及用於高功率應 用、高頻高功率MOSFET(例如上至500 W之IXZ 2210N50L、DE275X2-102 N06A)。該系統係在 2 至 20 MHz 下使用用於s亥初級線圈之5 V至3 0 V之一供應電壓操作。 使用此等參數，具有自〇.1 „1„1至2 mm變化之一厚度之不 同基板（例如玻璃基板）被成功切割（見圖4、圖5、圖6a及圖 6b)。 亦觀察到可使用一額外冷卻裝置進一步控制熱張力之形 成及隨後材料分離，該額外冷卻裝置在加熱之前及/或之 後在一經定義時間並在一經界定量值下冷卻該經加熱區 域。此改良之可行實施例包含待切割之該基板之預冷卻、 藉由施加氣體流（例如空氣、氮氣、氬氣）、液體（例如二氯 曱烷、三氣甲烷）或氣體與液體之一混合物（氣霧劑）或氣體 與固體（例如一氧化碳乾冰）而冷卻。如一實例，對於該等 上文提到的特斯拉變壓器參數，額外冷卻步驟係使用例如 一喷嘴而成功執行，該喷嘴具有丨mm之一直徑、在丨巴之 一相對壓力下在〜1(rc下喷射空氣、在距該基板的表面ι mm之一距離處並放置於相對於該電極1〇mm之一距離處。 玻璃性質（諸如厚度及熱膨脹係數）主要影響該切割製程 期間該玻璃的行為；因&，__較厚玻璃或具有—低熱膨服 153645.doc •23· 201232648 係數之一玻璃將引起需要更大電流及/或更慢速度以增加 經傳送能量之數量之一切割製程。 本發明可應用於不同均質或異質材料，包含趨於塑性破 裂之玻璃（硼矽酸鹽、浮製玻璃、鹼石灰或其他形式，亦 例如硬化玻璃、離子處理或電漿處理玻璃、強化玻璃）、 氧化矽、熔融矽石 '藍寶石、特殊玻璃材料（硬化玻璃、 離子處理或強化）及分層材料。具有非平坦或不規則表面 之基板亦可適用於本發明方法'然而，為改良在此等條件 下的結果’該設備可以便於使該（等）電極依循具有距該基 板表面之一經界定（例如恆定）距離之基板表面之—方式調 適。基板材料之典型厚度自0·01 mm至5 mm、較佳自〇1 随至2 mm之範圍内變化。在—實施例中，該基板在一側 或兩側上已附接具有—額外導電材料（諸如氧化銦錫（⑽)) 或非導電材料（諸如金屬氧化物）層。 沿著相對於彼此之-線性（即單一維度）路徑移動該基板 及該(等)電極，將產製一直線切割或分離。具有複雜形狀 之基板可藉由施加本發明方法同時以便於依循該基板上的 斤要求形狀之方式控制該⑷電極位置/移動而獲得。在該 經測試組態中，容易獲得複雜形狀，包含 : 矩形及波形線㈣（圖1)。 為獲得精確㈣基板，該電極與該基板之間之相對移動 可由數字控制的機電設備控制。在―可行組態_ 電極係由較位機H而在絲板之上㈣，或者，該 移動同時保持該(等)電極在一固定位置；此二選擇之組合 153645.doc •24· 201232648 亦為可行。為了在一適當短時間内(通常保持校正干預時 間低於100毫秒）控制及調適該等電及機械參數，可實施一 反饋回路。以此方式’基於電流、電塵及/或溫度之量測 值，可能即時調整電厂堅產生器參數、冷卻系統、基板-電 極距離及/或速度以保持一常規製程。 此等設備可經由-合適電腦系統(諸如經裝備具有一合 適輸入/輸出介面之-PC)或連接至該數字控制設備的一單 機控制裝置控制及驅動以用於該基板及/或該電㈣動或 其等之一組合之控制。 由於該切割製程之起始可為—臨界事件，故可引進一源 裂痕（或人造不規則）以藉由決定㈣之正確起始部位而使 該製程更精確。此等不規則可放置於該基板之該邊緣上 (在切割自該材料的邊界開始之情況下）或放置於該基板自 身内。違基板内的此等種裂痕在該基板内之封閉切割（即 未跨越該外邊界)之情況下為重要。放置於樣本中的多處 不規則可有用於預界定複雜分離路徑。 此外，參考作為例示性實施例給出之下列圖式。 更特定言之， 圖1顯示指向材料（5)之該表面的—電極⑴之—例示性實 施例。此電極（1)係連接至可或不可接地之一產生器（6)。 在由產生11(6)施加/產生電壓之後一電孤⑺形成於該材 料之該表面與該電極之間。一冷卻系統（3)係放置於距該電 極之一固定距離處，吹動可呈氣體、液體或氣霧劑形式之 一冷卻介質。該電極（繼之以該冷卻噴嘴）及該材料之該表 153645.doc -25- 201232648 面在#獲付切割之方向（4)相對於彼此移動，以暴露待切割 之該表面於該電極。一可選相對電極⑺可依循待切割之該 基板之該相對側。虛線指示其中期望切割發生之該區域。 圖2顯示發明裝置（8)之該電部分之一可行實施例：驅動 連接至一特斯拉產生器之初級線圈（10)的一功率級（9)之高 頻產生器。次級線圈（u)係連接至將經放置接近於該基板 之電極（7)，可具有一經接地之相對電極（7)。一可選回饋 (12)調諧由該產生器產製的頻率。 圖3顯示本發明裝置之自動操作之一可行配置，其包含 基板（5)、連接至電壓供應（6)的電極（1)、移動電極（13)或 基板（14)之一數字控制設備、在可見光、紅外光或紫外光 範圍内操作之一監視/回饋照相機（丨5)、一控制裝置（丨6)。 圖4顯示由D263T玻璃（厚度：〇·7 mm)製成的一載玻片： 2.5 A、3·85 mm/s、1巴冷空氣、500 μϊΏ樣本-電極距離。 圖5顯示一電弧在該切割製程期間形成於該玻璃樣本與 該電極之間。吹動冷空氣之該噴嘴跟在該電極後面一楚来 以控制溫度分佈並避免隨機裂痕發生。 圖6a及圖6b顯示硬化玻璃（厚度：〇.7 mm) : 2.5 A、3.85 mm/s ' 1巴冷空氣、500 μιη樣本-電極距離。 此外，參考經給出以說明而非限制本發明之下列實例。 實例 實例1 為了切割呈一波形之一 D263T玻璃載玻片，繼該電極及 該空氣噴嘴之後的該路徑係使用一編碼語言程式化。一電 153645.doc •26· 201232648 腦與一數字控制機電設備之間之一介面係用於傳輸該電極 及該空氣喷嘴必須依循之該路徑。 該載玻片玻璃厚度為0.7 mm，獲得一切割所施加的該等 參數為：具有3.85 _/s之該電極及該空氣喷嘴之一速度Obtained, and the secondary winding is placed in the primary coil. As the electrodes, both of them are used in the shape of a pointed rod having a diameter of one of 5·5 mm to 2 mm. The power electronics necessary to drive the primary coil are based on semiconductors such as low-power applications (up to 5 〇W) monolithic m〇s gate drivers (such as from [[XYSiIXDD414]) and for high power applications , high frequency high power MOSFET (for example, up to 500 W IXZ 2210N50L, DE275X2-102 N06A). The system operates at 2 to 20 MHz using one of the 5 V to 30 V supply voltages for the primary coil of the shai. Using these parameters, different substrates (such as glass substrates) having a thickness varying from .1 „1„1 to 2 mm were successfully cut (see Figures 4, 5, 6a and 6b). It has also been observed that the formation of thermal tension and subsequent material separation can be further controlled using an additional cooling device that cools the heated region for a defined time and/or after a defined amount of time before and/or after heating. A possible embodiment of this improvement comprises pre-cooling of the substrate to be cut, by application of a gas stream (e.g., air, nitrogen, argon), liquid (e.g., dichloromethane, tri-methane) or a mixture of a gas and a liquid (Aerosol) or gas and solid (such as carbon monoxide dry ice) to cool. As an example, for the Tesla transformer parameters mentioned above, the additional cooling step is successfully performed using, for example, a nozzle having a diameter of one mm, at a relative pressure of one of the 丨bars at ~1 ( The air is ejected under rc at a distance from the surface of the substrate and placed at a distance of 1 mm from the electrode. The properties of the glass (such as thickness and coefficient of thermal expansion) primarily affect the glass during the cutting process. Behavior; due to &, __ thicker glass or having a low heat expansion 153645.doc • 23 · 201232648 one of the coefficients of the glass will cause a need for more current and / or slower speed to increase the amount of transmitted energy The invention can be applied to different homogeneous or heterogeneous materials, including glass which tends to be plastically fractured (boron silicate, float glass, soda lime or other forms, such as hardened glass, ion treated or plasma treated glass, fortified). Glass), cerium oxide, molten vermiculite 'sapphire, special glass material (hardened glass, ion treatment or strengthening) and layered materials. Non-flat or irregular The substrate may also be suitable for use in the method of the invention 'however, to improve the results under such conditions' the apparatus may facilitate the step of the electrode to follow a substrate surface having a defined (e.g., constant) distance from one of the substrate surfaces. - Mode adaptation. The typical thickness of the substrate material varies from 0. 01 mm to 5 mm, preferably from 〇 1 to 2 mm. In the embodiment, the substrate is attached on one or both sides. Having an additional conductive material (such as indium tin oxide (10)) or a layer of non-conductive material (such as a metal oxide). Moving the substrate and the (e) electrode along a linear (ie, single dimension) path relative to each other, The production line is cut or separated in a straight line. A substrate having a complex shape can be obtained by applying the method of the present invention while controlling the (4) electrode position/movement in a manner that follows the desired shape on the substrate. In the tested configuration Easy to obtain complex shapes, including: Rectangle and wavy lines (4) (Fig. 1). To obtain an accurate (four) substrate, the relative movement between the electrode and the substrate can be controlled by a digitally controlled electromechanical device. In the "feasible configuration" electrode is from the positioner H above the wire plate (four), or, the movement while maintaining the (equal) electrode at a fixed position; the combination of the two choices 153645.doc •24· 201232648 It is also feasible. In order to control and adapt the electrical and mechanical parameters in a suitable short period of time (usually maintaining a corrected intervention time of less than 100 milliseconds), a feedback loop can be implemented. In this way, based on current, electric dust and/or Temperature measurements may adjust the plant generator parameters, cooling system, substrate-electrode distance and/or speed to maintain a conventional process. These devices may be via a suitable computer system (such as equipped with a suitable input) /Output interface - PC) or a stand-alone control device connected to the digital control device controls and drives for control of the substrate and/or the electrical (4) or a combination thereof. Since the beginning of the cutting process can be a critical event, a source crack (or artificial irregularity) can be introduced to make the process more accurate by determining the correct starting point of (4). Such irregularities can be placed on the edge of the substrate (in the case of cutting from the boundary of the material) or placed within the substrate itself. It is important that such cracks in the substrate are closed (i.e., do not cross the outer boundary) within the substrate. Multiple irregularities placed in the sample can be used to predefine complex separation paths. Further, reference is made to the following drawings which are given as exemplary embodiments. More specifically, Figure 1 shows an exemplary embodiment of the electrode (1) directed to the surface of the material (5). This electrode (1) is connected to one of the generators (6) that can be or cannot be grounded. An electric insulator (7) is formed between the surface of the material and the electrode after the voltage is applied/generated by the generation 11 (6). A cooling system (3) is placed at a fixed distance from one of the electrodes and blows a cooling medium in the form of a gas, a liquid or an aerosol. The electrode (followed by the cooling nozzle) and the surface of the material 153645.doc -25-201232648 are moved relative to each other in the direction of the #cutting cut (4) to expose the surface to be cut to the electrode. An optional counter electrode (7) can follow the opposite side of the substrate to be cut. The dashed line indicates the area in which the cutting is desired to occur. Figure 2 shows a possible embodiment of the electrical part of the inventive device (8): driving a high frequency generator of a power stage (9) connected to the primary coil (10) of a Tesla generator. The secondary coil (u) is connected to an electrode (7) that will be placed close to the substrate and may have a grounded opposite electrode (7). An optional feedback (12) tunes the frequency produced by the generator. Figure 3 shows a possible configuration of the automatic operation of the device of the invention comprising a substrate (5), a digital control device connected to the electrode (1) of the voltage supply (6), a moving electrode (13) or a substrate (14), One of the monitor/return cameras (丨5) and one control unit (丨6) operating in the visible, infrared or ultraviolet range. Figure 4 shows a slide made of D263T glass (thickness: 〇·7 mm): 2.5 A, 3·85 mm/s, 1 bar cold air, 500 μϊΏ sample-electrode distance. Figure 5 shows an arc formed between the glass sample and the electrode during the cutting process. The nozzle that blows cold air follows the electrode to control the temperature distribution and avoid random cracking. Figures 6a and 6b show hardened glass (thickness: 〇.7 mm): 2.5 A, 3.85 mm/s '1 bar cold air, 500 μηη sample-electrode distance. Further, the following examples are given to illustrate, but not to limit, the invention. EXAMPLES Example 1 In order to cut a D263T glass slide in one of the waveforms, the path following the electrode and the air nozzle was programmed using a coding language. An interface between the brain and a digitally controlled electromechanical device is used to transport the electrode and the path that the air nozzle must follow. The glass of the glass slide has a thickness of 0.7 mm, and the parameters applied to obtain a cut are: the electrode having 3.85 _/s and the speed of the air nozzle
之2.5 A電流、離開該喷嘴之冷空氣之一 α虔力及I 之該電極與該玻璃樣本之間之一 J ^距離。圖4中可見所獲得 的該所得切割。 實例2 之該路徑。 為了切割硬化賴，繼㈣極及該线㈣之後的該路 徑係使用—編碼語言程式化。-電腦與-數字控制機電設 備之間之一介面係用於傳輸該電極及該空氣喷嘴必須依循 該硬化玻璃厚度為〇.7 _ H切割所施加的該等參 數為：具有3.85 mm/s之該電極及該空氣喷嘴之一速度之 U A電流、離開該噴嘴之冷空氣之一 m屋力及〇 5咖之 *亥電極與該玻璃樣本之間之一距離。圖及圖❿中可觀察 到所獲得的該所得切割。 在說明書、中請專利範圍及/或在隨附圖式中揭示的本 發明之特徵可分離地或以任何組合方式作為用以實現本發 明的各種形式之材料。 【圖式簡單說明】 圖1顯示指向該材料之該表面的極之—例示性實施 例0 圖2顯示本發明的裝 置之該電部分之一可行實施例 153645.doc •27· 201232648 圖3顯示用於本發明的裝置之自動操作之一可行配置。 圖4顯示刪T玻項（厚度：〇7mm)製成的一載玻片。 該=一。電W—該玻璃樣本與 圖6a及圖6b顯示硬化玻璃（厚度：〇 7坑把） 【主要元件符號說明】 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 電極 電弧 冷卻系統 切割方向 材料 產生器 相對電極 高頻產生器 功率級 初級線圈 次級線圈 回饋 電極 基板 監視/回饋照相機 控制裝置 153645.doc • 28 ·The 2.5 A current, one of the cold air leaving the nozzle, and the J ^ distance between the electrode and the glass sample. The resulting cut obtained can be seen in Figure 4. The path of instance 2. In order to cut harden, the path after the (four) pole and the line (4) is programmed using a coding language. - an interface between the computer and the digitally controlled electromechanical device for transmitting the electrode and the air nozzle must follow the thickness of the hardened glass. The parameters applied by the cutting. 7 _ H cutting are: 3.85 mm/s The distance between the electrode and the UA current of one of the air nozzles, the amount of cold air leaving the nozzle, and the distance between the glass electrode and the glass sample. The resulting cut obtained can be observed in the figures and figures. The features of the invention, as disclosed in the specification, and/or the features of the invention as disclosed in the accompanying drawings, may be employed in various forms. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a pole pointing to the surface of the material - an exemplary embodiment 0. Figure 2 shows one of the electrical parts of the apparatus of the present invention. 153645.doc • 27· 201232648 Figure 3 shows One of the possible configurations for the automatic operation of the apparatus of the present invention. Figure 4 shows a slide made of T-glass (thickness: 〇 7 mm). The = one. Electric W—This glass sample and Figure 6a and Figure 6b show hardened glass (thickness: 〇7 pit handle) [Main component symbol description] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Electrode arc cooling system cutting Directional material generator relative electrode high frequency generator power stage primary coil secondary coil feedback electrode substrate monitoring / feedback camera control device 153645.doc • 28 ·