201230414 六、發明說明： 【發明所屬之技術領域】 _]本發明涉及-種半導體發光元件’特別涉及—種發光二 極體的封裝結構。 【先前技彳标】 [0002] 常見的發光二極體封裝結構均具有一層由樹脂、矽膠等 材料製成的封裝層將發光二極體晶片包覆，用於保護發 光二極體晶片。發光二極體晶片發出的光可透過該封裝 層並向外射出。由於封裝層的折射率比大氣的折射率大 ，當光線的入射角大於臨界角時’發光二極體晶片發出 的光將在封裝層與大氣的介面發生全反射’致使光線不 能射出至封裝層外，因而影響發光效率。另一方面，由 於越偏離光轴的光線越容易產生全反射，使得該發光二 極體封裝結構在光軸附近的光強度大’而越偏離光軸光 線越弱，光線分佈不均勻，不利於後端使用。 【發明内容】 [0003] 本發明旨在提供一種發光效率高且發光均勻的發光二極 體封裝結構。 [0004] 一種發光二極體封裝結構，包括基板、設置在基板上的 發光二極體晶片，以及封裝發光二極體晶片的封裝層， 封裝層具有—個出光面，發光二極發出的光㈣ 出光面射出’該出光面上設有微結構，該微結構的設置 具有如下規律中的至少_個：微結構分佈的密度與發光 二極體晶片在出光面上的光強度分佈呈反比；微結構的 尺寸與發光二極體晶片在出光面上的光強度分佈 呈反比 100101058 表單編號A0101 第4頁/共13頁 1002001902-0 201230414 ο [0005] 一種發光二極體封裝結構，包括基板、設置在基板上的 發光二極體晶片，以及封裝發光二極體晶片的封裝層， Ο [0006] 發光二極體晶片具有一個光軸，封裝層具有一個出光面 ’發光二極體晶片發出的光從該出光面射出，該出光面 上設有微結構’該微結構的設置具有如下規律中的至少 一個：距離光軸越遠，設置在出光面上的微結構分佈的 密度越大；距離光軸越遠，設置在出光面上的微結構的 尺寸越大。 本發明中的發光二極體封裝結構在其出光面上設置的微 結構依光強度的變化而變化，可更大程度的破壞發光二 極體晶片的光線全反射，同時優化出光面的出光均勻性 ，利於發光二極體封裝結構的後端使用。 【實施方式】 [0007] 〇 [0008] 請參考圖1，本發明第一實施例的發离二極體封裝結構包 括基板10，設置在基板10上的發光體晶片20及封裝 發光二極體晶片2 0的封裝層3〇。 基板10的一表面上例如是頂表面上，設有電路結構12。 優選的，該電路結構12可延伸至基板1〇的另一表面，例 如是底表面。 [0009] 優選的’該基板10的頂表面上還可設有一個反射杯14 ° 該反射杯14的材質可與基板10的材質相同。 發光二極體晶片20可以是在43〇nm以上具有發光峰值波長 的氮化鎵系發光二極體晶片，例如可以是發藍光的發光 100101058 表單編號A0101 第5頁/共13頁 1002001902-0 [0010] 201230414 二極體，當然還可以在430nm以下具有發光峰值波長的氮 化鎵系發光二極體晶片，例如紫外光發光二極體。 [0011] 發光二極體晶片20與電路結構12電連接從而可與外部電 源導通，以獲得發光二極體晶片20工作時所需的電能。 發光二極體晶片20可以覆晶或者打線固晶的方式固定在 基板10上。本實施例中，發光二極體晶片20採用打線固 晶的方式固定在基板10的電路結構12上’發光二極體晶 片20的電極通過導線與電路結構12電連接。 [0012] 優選的，發光二極體晶片20置於反射杯14的底部，並可 置於中央位置。發光二極體晶片20具有一個通過發光二 極體晶片20本身且垂直基板10的光轴15。一般而言，發 光二極體晶片20沿著光軸15正向發光的光強度較大，而 越偏離光軸方向的光強度越小。 [0013] 封裝層30可以是由樹脂或者矽膠等材料製成，用於封裝 發光二極體晶片20。封裝層30的外表面可大致與反射杯 14的開口相平。封裝層30的外表面形成出光面31。發光 二極體晶片20發出的光線經封裝層30的出光面31射出至 封裝結構的外部空間。該出光面31可依反射杯14的開口 形狀不同而具有不同的形狀，例如可以是圓形、擴圓形 、方形等。 [0014] 封裝層30内還可進一步包括螢光粉32，所述螢光粉32可 包含石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢 光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化 物基螢光粉和氮化物基螢光粉中的一種或多種。 100101058 表單編號A0101 第6頁/共13頁 1002001902-0 201230414 [0015]封褒層30的出光面31上形成複數微結構4〇。本實施例中 ，該微結構40是呈錐形的凸起。在其他實施例中，微結 構40還可以是呈其他形狀（如圓頂形）的凸起，也還可 以是在出光面31上形成的凹槽，或者各種形狀的網點結 構。凹槽的橫截面可為V形，ϋ形等形狀。各種微結構4〇 的开>態可組合呈現在一個實施例中。該微結構分佈的 密度與發光二極體晶片20在出光面31上的光強度分佈呈 反比。換言之，出光面31上的光強度小的地方，該微結 構40設置的密度大，出光面31上的光強度大的地方，該 〇 微結構設置的密度小。具體到該實施例中，在出光面 31上越遠離光軸15的區域，該微結構4〇設置的密度越大 ’而越靠近光軸15的區域，該微結構4〇設置的密度越小 [0016]由於偏離光轴15的區域光強度較小，設置更多的微結構 40可使光線在該區域的全反射被破壞的更多，因而能有 效提升該區域的光線透過率，從而使偏離光軸15的區域 的光強度變大，使得與靠近光軸15的區域的光強度相同 或接近。由此可提高發光二極體封裝、结構的出光均勻性 ’在後端利用例如是用於背光模組中的光源時可更好地 提高發光二極體晶片20的光學性能，以減少勻光的二次 光學元件的使用。 [0017] 請參考圖2，本發明第二實施例的發光二極體封裝結構與 上述封裝結構基本相同，不同之處在於，微結構42的尺 寸還與發光二極體晶片20在出光面31上的光強度分佈呈 反比。換言之，在出光面31上越遠離光軸15的區域，該 1002001902-0 100101058 表單編號Α0101 第7頁/共13頁 201230414 微結構42設置的尺寸越大，而越靠近光軸15的區域，該 微結構42設置的尺寸越小。具有該種特徵的微結構42亦 能達成上述實施例中提及的效果。圖中示出的微結構42 的尺寸並不能代表微結構42的真實尺寸，該微結構42的 尺寸為微米級或者納米級。 [0018] 在其他實施例中，也可僅設置具有上述尺寸變化的微結 構42，並非需要同時具有密度變化的規律。微結構42的 具體形態可為上述實施例中的微結構40的一種或多種。 [0019] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0020] 圖1為本發明第一實施例的發光二極體封裝結構的剖視示 意圖。 [0021] 圖2為本發明第二實施例的發光二極體封裝結構的剖視示 意圖。 【主要元件符號說明】 [0022] 基板：10 [0023] 電路結構：12 [0024] 反射杯：14 [0025] 光軸：15 100101058 表單編號A0101 第8頁/共13頁 1002001902-0 201230414 [0026] 發光二極體晶片：20 [0027] 封裝層：30 [0028] 出光面：3 1 [0029] 螢光粉：3 2 [0030] 微結構：40、42 〇 100101058 表單編號A0101 第9 頁/共13頁 1002001902-0201230414 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a semiconductor light-emitting device', and particularly relates to a package structure of a light-emitting diode. [Previous Technical Standards] [0002] A common LED package structure has a package layer made of a resin, silicone or the like to encapsulate a light-emitting diode wafer for protecting a light-emitting diode wafer. Light emitted from the LED chip can pass through the encapsulation layer and be emitted outward. Since the refractive index of the encapsulation layer is larger than the refractive index of the atmosphere, when the incident angle of the light is greater than the critical angle, the light emitted by the LED chip will be totally reflected at the interface between the encapsulation layer and the atmosphere, so that the light cannot be emitted to the encapsulation layer. In addition, it affects the luminous efficiency. On the other hand, the light that is more off-axis from the optical axis is more likely to cause total reflection, so that the light intensity of the light-emitting diode package structure near the optical axis is large, and the lighter the light from the optical axis, the light distribution is uneven, which is disadvantageous for Used by the backend. SUMMARY OF THE INVENTION [0003] The present invention is directed to a light emitting diode package structure having high luminous efficiency and uniform light emission. [0004] A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the substrate, and an encapsulation layer encapsulating the light emitting diode chip, wherein the encapsulation layer has a light emitting surface and the light emitted by the light emitting diode (4) emitting light surface, the microstructure is provided with a microstructure, and the microstructure is arranged to have at least one of the following rules: the density of the microstructure distribution is inversely proportional to the light intensity distribution of the light-emitting diode wafer on the light-emitting surface; The size of the microstructure is inversely proportional to the light intensity distribution of the light-emitting diode wafer on the light-emitting surface. 100101058 Form No. A0101 Page 4 of 13 1002001902-0 201230414 ο [0005] A light-emitting diode package structure including a substrate, a light emitting diode chip disposed on the substrate, and an encapsulating layer encapsulating the light emitting diode chip, [0006] the light emitting diode chip has an optical axis, and the encapsulating layer has a light emitting surface emitted by the light emitting diode chip Light is emitted from the light exiting surface, and the light emitting surface is provided with a microstructure. The arrangement of the microstructure has at least one of the following rules: the farther from the optical axis, the setting is The density of the microstructure distribution on the light surface is larger; the further away from the optical axis, the larger the size of the microstructure disposed on the light exit surface. The microstructure of the light-emitting diode package structure on the light-emitting surface of the present invention changes according to the change of the light intensity, which can damage the total light reflection of the light-emitting diode wafer to a greater extent, and optimize the light-emitting uniformity of the light-emitting surface. Sex, which is good for the back end of the LED package structure. [0007] Referring to FIG. 1, a transmitter-off diode package structure according to a first embodiment of the present invention includes a substrate 10, an illuminant chip 20 disposed on the substrate 10, and a package LED. The encapsulation layer 3 of the wafer 20 is. On one surface of the substrate 10, for example, a top surface, a circuit structure 12 is provided. Preferably, the circuit structure 12 can extend to another surface of the substrate 1 , such as a bottom surface. [0009] Preferably, the top surface of the substrate 10 may further be provided with a reflective cup 14°. The reflective cup 14 may be made of the same material as the substrate 10. The light-emitting diode wafer 20 may be a gallium nitride-based light-emitting diode wafer having an emission peak wavelength of 43 〇 nm or more, for example, a blue light-emitting light 100101058. Form No. A0101 Page 5 / Total 13 pages 1002001902-0 [ 0010] 201230414 Diode, of course, a gallium nitride-based light-emitting diode wafer having an emission peak wavelength of 430 nm or less, such as an ultraviolet light-emitting diode. [0011] The LED wafer 20 is electrically connected to the circuit structure 12 so as to be electrically connected to an external power source to obtain electrical energy required for the operation of the LED array 20 during operation. The light emitting diode chip 20 can be fixed on the substrate 10 by flip chip or wire bonding. In this embodiment, the LED substrate 20 is fixed on the circuit structure 12 of the substrate 10 by wire bonding. The electrodes of the LED array 20 are electrically connected to the circuit structure 12 through wires. [0012] Preferably, the LED wafer 20 is placed at the bottom of the reflector cup 14 and can be placed in a central position. The light-emitting diode wafer 20 has an optical axis 15 that passes through the light-emitting diode wafer 20 itself and is perpendicular to the substrate 10. In general, the light intensity of the light-emitting diode wafer 20 that emits light in the forward direction along the optical axis 15 is large, and the light intensity that deviates from the optical axis direction is smaller. [0013] The encapsulation layer 30 may be made of a material such as resin or silicone for encapsulating the LED chip 20. The outer surface of the encapsulation layer 30 can be substantially flush with the opening of the reflective cup 14. The outer surface of the encapsulation layer 30 forms a glossy surface 31. The light emitted from the LED wafer 20 is emitted through the light exit surface 31 of the encapsulation layer 30 to the outer space of the package structure. The light-emitting surface 31 may have a different shape depending on the shape of the opening of the reflector cup 14, and may be, for example, a circle, an oval, a square, or the like. [0014] The encapsulating layer 30 may further include a phosphor powder 32, and the phosphor powder 32 may include garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, and sulfide. One or more of a base fluorescent powder, a thiogallate-based fluorescent powder, an oxynitride-based fluorescent powder, and a nitride-based fluorescent powder. 100101058 Form No. A0101 Page 6 of 13 1002001902-0 201230414 [0015] A plurality of microstructures 4 are formed on the light-emitting surface 31 of the sealing layer 30. In this embodiment, the microstructure 40 is a tapered protrusion. In other embodiments, the microstructures 40 may also be protrusions in other shapes (e.g., dome-shaped), or grooves formed on the light-emitting surface 31, or dot structures of various shapes. The cross section of the groove may be a V shape, a dome shape or the like. The open > states of the various microstructures can be combined in one embodiment. The density of the microstructure distribution is inversely proportional to the light intensity distribution of the LED wafer 20 on the light exit surface 31. In other words, where the light intensity on the light-emitting surface 31 is small, the density of the microstructure 40 is large, and the light intensity on the light-emitting surface 31 is large, and the density of the microstructure is small. Specifically, in this embodiment, the farther the microstructure 4 is disposed on the light-emitting surface 31 from the region of the optical axis 15, the closer the density is to the region of the optical axis 15, the smaller the density of the microstructure 4 is set [ 0016] Since the light intensity from the region deviating from the optical axis 15 is small, providing more microstructures 40 can cause the total reflection of light in the region to be destroyed more, thereby effectively increasing the light transmittance of the region, thereby deviating The light intensity of the region of the optical axis 15 becomes large, so that the light intensity with respect to the region near the optical axis 15 is the same or close. Therefore, the light uniformity of the LED package and the structure can be improved. The optical performance of the LED wafer 20 can be better improved when the rear end utilizes, for example, a light source used in the backlight module to reduce the uniform light. Use of secondary optical components. [0017] Referring to FIG. 2, the LED package structure of the second embodiment of the present invention is substantially the same as the package structure described above, except that the size of the microstructure 42 is also on the light-emitting surface 31 of the LED chip 20. The distribution of light intensity on the surface is inversely proportional. In other words, the region farther from the optical axis 15 on the light-emitting surface 31, the 1002001902-0 100101058 form number Α0101 7th page/total 13 page 201230414 The larger the size of the microstructure 42 is set, the closer to the region of the optical axis 15, the micro The smaller the size of the structure 42 is set. The microstructures 42 having such features can also achieve the effects mentioned in the above embodiments. The dimensions of the microstructures 42 shown in the figures are not representative of the true dimensions of the microstructures 42, which are either micron or nanoscale in size. [0018] In other embodiments, it is also possible to provide only the microstructures 42 having the dimensional changes described above, and it is not necessary to have a law of density variation at the same time. The specific configuration of the microstructures 42 can be one or more of the microstructures 40 of the above embodiments. [0019] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0020] FIG. 1 is a cross-sectional view showing a light emitting diode package structure according to a first embodiment of the present invention. 2 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention. [Main component symbol description] [0022] Substrate: 10 [0023] Circuit structure: 12 [0024] Reflector cup: 14 [0025] Optical axis: 15 100101058 Form number A0101 Page 8 of 13 1002001902-0 201230414 [0026 Light Emitting Diode Wafer: 20 [0027] Encapsulation Layer: 30 [0028] Light Emitting Surface: 3 1 [0029] Fluorescent Powder: 3 2 [0030] Microstructure: 40, 42 〇 100101058 Form No. A0101 Page 9 / Total 13 pages 1002001902-0