201230121 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種具碳膜之線型基板、具碳膜之線型基 板之製造方法、及場放射型光源。 【先前技術】 近年來，可使用於照明或顯示之場放射型光源（Field Emission Light:以下稱為FEL)之研究不斷進展，且作為 場放射型光源之場放射用陰極（亦稱為射極電極或陰極電 極），已知有於基板上形成由奈米金剛石層（ND層）與碳奈 米牆層（CNW層）之積層構造而成之ND/CNW層者。 專利文獻1中記載有如下之方法：使用直流電漿CVD裝 置，將鎳等之基板固定於直流電漿CVD裝置之陽極之載置 面上，並使其暴露於在氫氣體與含碳化合物氣體之混合氣 體中產生之電漿，藉此形成ND/CNW層。 作為FEL之場放射用陰極而使用之電極，有於線型之射 極電極基板上設置作為電子放射膜之ND/CNW層者。 作為此處所言之「線型之基板」，一般使用例如圓柱形 狀等的棒狀之基板。 作為電子放射膜之ND/CNW層，係藉由直流電漿CVD裝 置，使載置於陽極電極上之線型射極電極基板暴露於在碳 化氫氣體與氫氣體之混合氣體中產生之電漿而形成。 先前技術文獻 專利文獻 專利文獻1:日本特開2007-109523號公報 160167.doc 201230121 【發明内容】 發明所欲解決之問題 將線型射極電極基板載置於直流電漿CVD載置之陽極電 極而進行ND/CNW層之形成時，會出現各線型射極電極基 板之電子放射特性各不相同之狀況。 本發明者們探討導致線型射極電極基板之電子放射特性 各不相同之原因，結果發現如下之問題。 首先’由於線型射極電極基板相對於載置線型射極電極 基板之陽極電極之接觸面積較小，且各個基板之上述接觸 面積不同，因此陽極電極與線型射極電極基板之間的熱傳 導不穩定。故在ND/CNW層之形成過程中，在同時成膜之 複數個線型射極電極基板之間成膜溫度不一，且經成膜之 電子放射膜之品質不定。因此，有在線型射極電極基板間 出現電子放射特性偏差大之問題。 又’針對以上述方法獲得之線型射極電極基板求出可獲 得有效之電子放射特性之成膜區域之廣度（以下亦稱為有 效電子束照射角度），其值不能說十分大，期望有效電子 束照射角度更大之線型射極電極基板。 本發明係為解決上述問題而完成者，其目的在於提供一 種有效電子束照射角度大之具碳膜之線型基板、及於線型 基板形成具有均一之電子放射特性之電子放射膜而製造具 碳膜之線型基板之方法。 又，目的在於提供一種利用有效電子束照射角度較大的 具破膜之線型基板之場放射型光源。 160167.doc 201230121 解決問題之技術手段 本發明之具韻之㈣基板包切k基板、及形成於 上述曲面上之含有奈米金剛石/碳奈米牆之碳膜，且於圓 筒型或漏斗型之陽極電極之中心軸配置上述具碳膜之線型 基板’藉由於陽極電極與線型基板之間施加電壓而進行電 子放射時，來自上述㈣之m子束照㈣度超過3〇。 且為95。以下。 圖1係顯示於漏斗型之陽極電極之中心軸配置具碳膜之 線型基板而測定有效電子束照射角度之情況之照片。 圖1所示之照片係顯示將Μ具碳膜之線型基板作為射極 電極而配置於内面經塗布螢光體之漏斗型之陽極電極之中 〜軸上，並藉由在真空中於陽極電極與線型基板之間施加 電壓而使電子束自碳膜向具螢光體之陽極電極放射，藉此 使螢光體發光時之情況。 於漏斗型之真空密封容器之中心車由配置具碳膜之線型基 板，且於陽極電極與線型基板之間施加電壓，藉由來自線 型基板之電子放射而發光之區域泛白。 上述照片之測定條件為投入電力hi W(〇.2 mA，5.5 kv)，真空度3〜4xl〇·5 pa。 又’於射極電極之兩端，為了以相對於平行於中心轴之 方向之向螢光體之電子束照射密度為一樣之方式而調節具 碳膜線型基板表面上之電場強度，安裝有較線型基板之直 徑更粗之饋電部及帽蓋部。 在上述照片中，自漏斗型之真空密封容器之中心軸起晝 160167.doc 201230121 出發光之區域與未發光之區域之邊界線而求出之角度為有 效電子束照射角度。 圖1所示之照片係使用本發明之具碳膜之線型基板測定 有效電子束照射角度之例，且有效電子束照射角度為 90° 〇 具有本發明決定之有效電子束照射角度之具碳膜之線型 基板由於跨廣範圍具有可獲得有效之電子放射特性之成膜 區域’因此可適宜作為構成場放射型光源之射極電極之材 料使用》 本發明之具碳膜之線型基板中，較佳為上述有效電子束 照射角度為70。〜90。。 將複數條具叙膜之線型基板作為射極電極基板沿圓周排 列而達成360。之電子放射之情形，若有效電子束照射角度 小，則容易產生隙縫。 且’若有效電子束照射角度小，為毫無隙縫地達成36〇。 之電子放射’則所需之射極電極基板之條數勢必會增加。 若有效電子束照射角度為70。以上，則可減少用以達成 360°之電子放射之射極電極基板之條數，因而較理想。 本發明之具石反膜之線型基板中，較佳為上述棒狀之基板 為具有曲面與平坦面之棒狀。 若使用具有平坦面之棒狀之基板，則於成膜裝置之陽極 載置面上，藉由以上述平坦面為底面、以上述曲面為上表 面而排列基板’可容易於上述曲面上形成具有均一之電子 放射特性之電子放射膜，因此較理想。 160167.doc 201230121 本發明之具碳膜之線型基板之製造方法，其特徵為包 含：準備棒狀之基板之步驟；將上述基板複數條排列於成 媒裝置之陽極載置面上之步驟；及於上述基板之表面使碳 膜成膜之成膜步驟；且在上述基板與上述成膜裝置之陽極 載置面為面接觸之狀態下進行成膜步驟。 若在棒狀之基板與成膜裝置之陽極載置面為面接觸之狀 態下進行成膜步驟，則陽極載置面與線型基板之接觸面積 較大，從而在陽極載置面上得以穩定載置線型基板。 因此，陽極電極與線型基板之間的熱傳導穩定，從而可 使同時成膜之複數個線型基板之間成膜溫度均一化。且， 可使經成膜之電子放射膜之品質一定。 其結果，可形成具有均一之電子放射特性之電子放射膜 而製造具碳膜之線型基板。 本發明之具碳膜之線型基板之製造方法令，較佳為，上 述棒狀之基板為具有曲面與平坦面之棒狀，且以上述平坦 面為底面、以上述曲面為上表面㈣列於上述成膜裝置: %極載置面上。 成膜裒置之陽極載置面通常為平板形狀。因此，藉由以 :::基，之平坦面為底面而排列，可使棒狀之基板與成 、裝置之陽極载置面成為面接觸之狀態。 :::月之具碳臈之線型基板之製造方法中，較佳為，將 上=在以垂直於其長度方向之方向切斷之剖面中，設 m “η 手牛uR，且上述曲面近似圓. 與上述平坦面之距離為d之情形時， 160167.doc 201230121 0<d<0.8xR之關係成立。 此處所言之距離d定義為在成膜步驟中平坦面位於較中 心0更下方之情形之距離。平坦面位於較中心〇更上方之 情形之距離d，設為附註減號符號之值。因此，平坦面位 於較中心〇更上方之情形，設為d<〇。 如為0<d之情形，由於電子放射膜所形成之曲面大於作 為線型基板而假定具有曲率半徑R之圓之情形之半圓之面 積，因此可跨廣範圍得到可獲得有效之電子放射特性之成 膜區域。又，若為d<〇.8xR，由於平坦面之寬度夠廣，因 此線型基板之接觸面積充分大，從而在陽極載置面上得以 穩定載置線型基板，因而較理想。 本發明之具碳膜之線型基板之製造方法中，較佳為，上 述成膜載置之陽極載置面具有凹槽，且於上述凹槽内載置 上述棒狀之基板。 若陽極載置面具有凹槽，則藉由於上述凹槽載置棒狀之 基板，可使棒狀之基板與成膜裝置之陽極載置面成為面接 觸之狀態。 在本發明之具碳膜之線型基板之製造方法中，較佳為， 將上述基板以各上述基板彼此分離之方式排列，且於上述 基板間配置其高度h低於上述基板之高度η之棒狀之間隔 件’而進行上述成膜步驟。 本發明者們發現’若毫無間隙地排列線型基板而進行成 膜’則只可於線型基板之頂上附近之狹窄區域得到可獲得 有效之電子放射特性之成膜區域。據推斷，其原因為向形 160167.doc 201230121 成於線型基板間之間隙部分之活性種的回繞較少。 又，使線型基板分離排列而進行成膜之情形時亦只能 夠於較窄區域得到可獲得有效t電子放射特性之成膜區 域。 作為其原因，據推斷為，由向線型基板之頂上附近之電 %集中增強，電漿中之電子集中，使得線型基板之頂上附 近與底面附近之溫度梯度增大。 在本發明之具碳膜之線型基板之製造方法中，若將上述 基板以各上述基板彼此分離之方式排列，且於上述基板間 配置其高度h低於上述基板之高度H之棒狀之間隔件，則由 於線型基板間存在谷間，因此設定活性種之回繞，且由於 向線型基板之頂上附近之電場集中受到緩和，因此可跨廣 範圍得到可獲得有效之電子放射特性之成膜區域。 其結果，可廣範圍形成具有均一之電子放射特性之電子 放射膜而製造具碳膜之線型基板。 本發明之具碳膜之線型基板之製造方法中，較佳為，上 述基板之高度Η、與上述間隔件之高度h之關係為 h=0.5xH〜0·8χΗ。 若h未達0.5χΗ，或h超過0.8χΗ，則有所獲得之具碳膜之 線型基板之有效電子束照射角度降低為70。以下之傾向。 本發明之具碳膜之線型基板之製造方法中，較佳為，上 述間隔件為石墨、以石墨為主成份之陶究、钥、鶴、戍 鈦。 該％·材料不會作為碳材料之成長之觸媒而作用，且炫_，點 160167.doc -9- 201230121 較高，因此較理想。 本發明之具碳膜之線型基板之製造方法中，較佳為，上 述成膜步驟藉由電漿CVD進行。 在藉由電漿CVD之成膜中，可更好地發揮作為本發明之 效果，即在同時成膜之複數個線型基板間成膜溫度均一化 之效果。 本發明之場放射型光源，其特徵為具備本發明之具碳膜 之線型基板作為構成射極電極之材料。 如此之場放射型光源，由於具有有效電子束照射角度大 之具碳膜之線型基板作為構成射極電極之材料，因此可適 宜作為具有良好之發光特性之光源使用。 發明之效果 本發明之具碳膜之線型基板’由於跨廣範圍具有可獲得 有效之電子放射特性之成膜區域，因此可適宜作為構成場 放射型光源之射極電極之材料使用。 又’在本發明之具碳膜之線型基板之製造方法中，可於 線型基板形成具有均一之電子放射特性之電子放射膜而製 造具碳膜之線型基板。 又’將本發明之具碳膜之線型基板作為構成射極電極之 材料使用之本發明之場放射型光源，可適宜作為具有良好 之發光特性之光源使用。 【實施方式】 (第一實施形態） 以下’參照圖式說明作為本發明之具碳膜之線型基板、 160167.doc 201230121 具碳膜之線型基板之製造方法及場放射型光源之一實施形 態即第一實施形態。 首先說明第一實施形態之具碳膜之線型基板。 圖2(a)係模式性顯示本發明之具碳膜之線型基板之一例 之立體，圖2(b)係圖2(a)所示之線型基板之A-A線剖面 圖。 圖2(a)及圖2(b)所示之具碳膜之線型基板〖中，使作為電 子放射膜之碳膜30成膜於棒狀之線型基板2〇之曲面21。 線型基板20具有將圓柱之一部分於其長度方向（圖2(幻 中，以兩箭頭B所示之方向）平行切斷之形狀，經切斷之面 為平坦面22。 圖2(b)係顯不具碳膜之線型基板丨之剖面圖。線型基板 20之剖面形狀為假定設中心〇、半徑R之圓，並以自中心〇 之距離為d之直線切斷上述假定之圓之形狀，經切斷之直 線相當於平坦面22。又’圓之外周之曲線相當於曲面21。 期望的是，在本實施形態之具碳膜之線型基板丨中，尺與 d之關係滿足〇<d<〇.8xR之關係。 線型基板20之種類非特別限定，可使用作為fel之射極 電極使用之電極。 其中，較好的是導電性陶究、或包含含有q之陶竟之 電極。理自是’若為如达匕之材才斗，由於其與成膜於其上之 碳膜之熱膨脹率相近，因此能防止由熱膨脹所致之線型基 板與碳膜之間的剝離。 碳膜30係形成由奈米金剛石層（ND層）與碳奈米牆層 160167.doc 11 201230121 (CNW層）之積層構造而成之ND/CNW層者。 若於圓筒型或漏斗型之陽極電極之中心軸配置具碳膜之 線型基板1，並藉由於陽極電極與線型基板之間施加電壓 而進行電子放射，則來自碳膜之有效電子束照射角度超過 30°且為95。以下。 有效電子束照射角度之測定方法之概要，如圖1及其說 明所示。 接著，說明本發明之具碳膜之線型基板之製造方法。 圖3係顯示本發明之具碳膜之線型基板的製造方法之成 膜步驟之情況之模式圖。 圖3中顯示在成膜步驟中使用之直流電漿CVD裝置1〇〇。 直流電漿CVD裝置1〇〇係於處理對象之線型基板2〇之表 面形成碳膜之裝置，具備用以將線型基板2〇與外氣隔絕之 腔室10。 於腔室H)内配置平臺U，且於平臺u之上部安裝有圓板 狀之陽極11a。使複數條線型基板2〇以其平坦面22在下而 載置於陽極11a之上側載置面llb。 又，後述之間隔件4〇亦载置於陽極i la之上側載置面 lib。 平臺11與陽極11 a皆設定為以軸χ為軸而旋轉。 於陽極1 la之載置面之下表面側配置冷卻構件Η，且為 藉由未圖示之移動機構使冷卻構件12上下移動之構成。冷 卻構件12以銅等之熱傳導率較高之金屬形成，於其内部^ 核未圖示之水或氯㈣水溶液等之冷媒而使冷卻構件㈣ 160167.doc 201230121 體冷卻。因此’冷卻構件12藉由移動至上方而抵接於陽極 lla，並介由陽極iia帶走線型基板2〇之熱。 於陽極lla之上方’以與陽極11a對向之方式隔開一定之 距離配置有陰極13。 於陰極13之内部形成冷媒流動之流道丨3a，且於該流道 之兩端安裝有管13b、管13c。管i3b、管13c貫通形成於腔 至10之孔而連通於流道13a。管13b、管13c穿過之腔室1〇 之孔以密封劑密封，從而確保腔室1〇内之氣密性。冷媒於 管13b、流道13a、管13c中流動，藉此抑制陰極13之發 熱。作為冷媒，較佳為水、氣化鈣水溶液、空氣、及惰性 氣體等較佳。 於腔室10之側面形成窗14，從而可進行腔室1〇内之觀 察。於窗14嵌入玻璃，從而確保腔室1〇内之氣密性。於腔 室10之外側’介由窗14之玻璃而配置有測定線型基板2〇之 溫度之放射溫度計15。 於該直流電漿CVD裝置1〇〇中具備：原料系統（圖示 略），其經由氣體供給用管16導入原料氣體；排氣系統（圖 示略），其經由排氣用管17自腔室1〇内排出氣體，從而調 整腔室10内之氣壓；及輸出設定部18。 各管16、17穿過設置於腔室10之孔。該孔與管16、17之 外周及與腔室10之間以密封材料密封，從而確保腔室1〇内 之氣密性。 輸出設定部18為設定陽極11 a與陰極13之間之電壓或電 流密度之機構’且輸出設定部18與陽極Ua及陰極13各自 160167.doc 201230121 以引線連接》各引線穿過設置於腔室]0之孔。被引線穿過 之腔室10之孔以密封材料密封。 輸出設定部1 8具備控制部18a，該控制部18a以引線與放 射溫度計15連接。控制部1 8a起動後，根據在放射溫度計 1 5所測定之線型基板2〇之成膜表面之放射率並參照線型基 板20之成膜表面之溫度，以使線型基板2〇之成膜表面之溫 度成為預定之值之方式，調整陽極lla與陰極13之間之電 壓或電流密度。 以下，詳細說明當使用上述直流電漿CVD裝置100於線 型基板20之表面上形成碳膜30時，於陽極lla之上側載置 面11b載置線型基板20之具體形態。 圖4係顯示設線型基板之平坦面為底面而加以排列之形 態之一例之模式圖。 圖4中顯示將線型基板以垂直於其長度方向之剖面(與圖 2(b)相同之剖面）切斷之剖面，且線型基板2〇以線型基板2〇 彼此分離之方式排列有複數條。 又，各線型基板20以其平坦面22為底面、曲面2ι為上表 面之方式排列。 於各線型基板間配置有間隔件4〇。 間隔件4〇為其高度匕低於基板之高度Η之棒狀之構件。 間隔件之高度h為於載置面等之平板上载置間隔件時距 離平板之高度。間隔件之形狀為圓柱形狀時，4高度Μ 直徑-致。間隔件之形狀為圓柱形狀以外之 ’、 離平板之高度會因間隔件之哪部分載置於載置面而異^巨 160l67.doc 201230121 此，將以於載置面等之平板上載置間隔件時距離平板之高 度為最低之方式載置間隔件之情形下距離平板之高度設為 間隔件之高度h。 基板之高度Η為將基板之平坦面作為底面而冑置於載置 面等之平板上時距離平板之高度。 期望的S，在本實施形態之具碳膜之線型基板之製造方 法中’使用間隔件之情形’基板之高度⑽上述間隔件之 咼度h之關係為h=〇.5xH〜〇.8χΗ。 間隔件40之材質雖非特別限定，但期望為不包含鐵、鈷 及鎳之金屬材料。 作為具體材料’可使用石墨、以石墨為主成份之陶瓷、 #目、鶴、或欽。 圖5係顯示將線型基板以其平坦面為底面而加以排列之 形態之另一例之模式圖 與圖4所示之形態不同，圖5中顯示使線型基板2〇複數條 也接而配置之形態β在圖5所示之形態中，未於各線型基 板間配置間隔件。 其後，說明使用圖3所示之直流電漿CVD裝置將碳膜成 膜，而形成具碳膜之線型基板之成膜步驟。 以下，在成膜步驟中，以於線型基板之表面形成碳奈米 牆、與形成於碳奈米牆上之包含複數之金剛石微粒子之碳 膜（ND/CNW層）之方法為例，說明成膜步驟。 首先，準備將包含導電性陶瓷之圓柱形狀之線型基板之 一部分於長度方向平行切斷之形狀之線型基板（參照圖2 (a) 160167.doc •15· 201230121 及圖2(b))。 又，準備包含以石墨為主成份之陶瓷之圓柱形狀之間隔 件。 其後，以成為圖4所示之配置之方式，於直流電漿cVD 裝置100之陽極Ua之上側載置面nb(陽極載置面），以平坦 面22為底面、曲面21為上表面之方式分離排列線型基板 20 ’且於各線型基板20間配置間隔件4〇。 其後，使用排氣系統使腔室1〇内減壓，接著，自氣體供 給用管16導入氫氣體與曱烷等之於組成中含有碳之化合物 之氣體（含碳化合物）》氣體供給用管16可針對氫氣體與甲 烷各設置不同之管，亦可作為混合氣體而匯集成1條。 期望的是，原料氣體中之於組成中含有碳之化合物之氣 體在王體之3 vol%〜30 vol%之範圍内。例如，設曱院之流 量為50 seem，虱之流量為5〇〇 seem，全體之壓力為 0.05〜1.5 atm，較好的是設為〇.07〜ο.】 atin。又，各線型基 板20以10 rpm使陽極lla旋轉，且以線型基板2〇上之溫度 不均為5 %以内之方式於陽極π a與陰極13之間施加直流電 源，使產生電漿’並控制電漿狀態及線型基板2〇之溫度。 於碳奈米牆之成膜時，設線型基板20之碳奈米牆成膜之 部位（曲面21上）之溫度為900。(：〜1100°C而進行特定時間之 成膜。利用放射溫度計15測定碳奈米牆之成膜表面之輻 射。此時，冷卻構件12以不會影響陽極ila之溫度之方式 充分隔開。放射溫度計1 5以減去直流電漿CVD裝置之電聚 輻射而僅自在線型基板20側之表面之熱輻射求取溫度的方 160167.doc • 16· 201230121 式設定。作為底層之碳奈米牆經充分成膜後，不改變氣體 環境而連續地接著使遠低於藉由電漿加熱之陽極1 la之溫 度之冷卻構件12上升並抵接於陽極lla之下表面。 此時’經冷卻之陽極11a使固定在其上之線型基板2〇冷 卻’將線型基板20側之表面急速冷卻至較碳奈米牆之成膜 時低10°C以上之複數之金剛石微粒子之成膜適宜溫度。此 時之溫度設為890°C〜950°C ’更好的是920°C〜940°C。由於 碳奈米牆為sp2鍵結之石墨構造’故放射率大致為1，因此 若將碳奈米牆作為底層膜使用，則藉由使其上之放射率配 合作為主成份之金剛石微粒子而設放射率為〇7，可掌握 金剛石微粒子之成膜狀態’而可進行穩定之溫度測定。 藉由急速冷卻，碳奈米牆之成長停止，而以碳奈米牆為 核心，複數之金剛石微粒子開始成長，最後於碳奈米牆上 形成包含粒徑為5 nm~ 10 nm之sp3鍵結之複數之金剛石微 粒子及介存於金剛石微粒子彼此之間隙中之導電性之sp2 鍵結之無定形碳之碳膜30(ND/CNW層）。 藉由上述步驟，於線型基板20之曲面21上形成碳膜 30(ND/CNW層），從而製造出具碳膜之線型基板。 在上述成膜步驟中，將線型基板2〇以其平坦面22為底面 而載置於直流電漿CVD裝置100之陽極lla之上側載置面 1 lb。若為如此之態樣，則由於線型基板2〇與陽極u a之間 的接觸面積較大，且熱傳導性較高，因此當使冷卻構件】2 升降時，線型基板20之溫度會迅速變化，而容易藉由冷卻 構件12之升降來進行線型基板2〇之溫度控制。 160167.doc -17- 201230121 因此’可使經成膜之電子放射膜之品質一定。 又’由於防止線型基板20滾動，因此亦防止成膜面損 傷。 以下’兹說明將本發明之具碳膜之線型基板作為構成射 極電極之材料使用之本發明之場放射型光源。 圖6係模式性顯示將本發明之具碳膜之線型基板作為構 成射極電極之材料使用之本發明之場放射型光源之一例之 剖面圖。圖6所示之場放射型光源50具備：將内部密封成 真空之真空密封容器51;配設於真空密封容器51内之作為 射極電極之具碳膜之線型基板〗；配設於真空密封容器51 之内壁面之一部分之陽極電極53 ;及形成於陽極電極53上 之螢光體層52。 作為射極電極之具碳膜之線型基板丨係於線型基板2〇之 曲面21上形成有碳膜3〇者，碳膜3〇以與螢光體層對向之 方式配置。 真空密封容器51為圓筒形，且以對可視光具有高透射率 之玻璃形成。 作為射極電極之具碳膜之線型基板丨為配設於真空密封 容器5 1之中心之線型電極。 線型電極與平行平板形之電極相比，可於電極面板產生 較南之電場強度，故較為有利。 陽極電極53包含金屬膜、或金屬氧化物膜，且形成於真 空密封容器之内壁面之一部分、具體為圓筒之下半部分以 下之部位。作為構成陽極電極之金屬膜之種類，可舉出氧 I60l67.doc • 18- 201230121 化鋁膜、碳膜等。 作為金屬氧化物膜之種類，可舉出Sn〇2、丨〜…等。 該等金屬膜、金屬氧化物膜可依據材料選擇蒸鍍法、濺 渡法等之方法而適當形成。 又’真空密封容器之直徑較小之情形等，亦可取代蒸鍍 法、漉渡法等之方法，而應用溶膠_凝膠法或無電解鑛敷 法。 作為螢光體層52，可使用例如Pl5螢光體（Zn〇: Zn)、 P22 螢光體（藍：ZnS : Ag，α ; ZnS : Ag，^ ;綠：: Cu ’ A1 ; ZnS : Cu，Au ’ A1 ;紅：Y2〇2S : Eu3+)、p53 營 光體（Y3AL5〇12 : Tb3+)、及 P56 螢光體（γ2〇3 : EU3+)等。此 外，只要為藉由電子束照射而發光之螢光體，其種類非特 別限定。 又，亦可不於螢光體層52之表面形成透明保護膜。 透明保護膜為抑制由螢光體層5 2之電子束照射所致之劣 化者，以透明且具有高電導係數之氧化銦錫、氧化鋅、或 氧化錫中任一種材料構成。藉由使該等材料以1〇〇〜2〇〇 厚附著於螢光體層52上，則自具碳膜之線型基板丨之碳膜 30放射之電子會到達螢光體層52，且可無遮蔽地提取由螢 光體層52發光之光。又，可大幅降低螢光體層52之螢光體 之劣化速度。 在上述構造之場放射型光源50中，自具碳膜之線型基板 1之碳膜30放射之電子束射向螢光體層52，與螢光體層52 碰撞而使螢光體發光。 160167.doc -19- jf _ 201230121 來自螢光體之發光從與螢光體層相反側（圖6之上側）介 由真空密封容器被提取至外部。如此之構造之場放射型光 源稱為電子照射面發光利用型FEL。 陽極電極53包含如氧化鋁膜之可視光反射率高之膜之情 形下’自螢光體之發光中射向著圖6之下側之光子會在陽 極電極53反射並射向上側。從而，如此之光子亦自與榮光 體層52相反側（圖6之上側）介由真空密封容器51而被提取至 外部。 (實施例） 藉由觀察自具碳膜之線型基板之碳膜之電子放射所引起 之螢光板之發光之情況，評估具碳膜之線型基板之電子放 射特性。 圖7係模式性顯示發光評估裝置之立體圖。 發光評估裝置60係於真空裝置内設置2條之角棒狀之臺 61a、61b、載置於臺61a、61b上之1〇條具碳膜之線型基板 1、及設置於與具碳膜之線型基板1之碳膜3〇對向之位置之 螢光板62之裝置。 臺61 a與高壓脈衝源63之—端電性連接，且亦具有對具 碳膜之線型基板1供饋電流之作用。 又’螢光板62亦與高壓脈衝源63之一端電性連接，且亦 具有作為陽極電極之作用。 在各實施例中，設臺61a、61b之高度為1〇 mm，具碳膜 之線型基板之長度為35 mm，具碳膜之線型基板間之間隔 為7 mm ’具碳膜之線型基板1之碳膜3〇之頂點與螢光板“ 160167.doc 201230121 之間隔為8 mm。 使真工裝置内排氣至5xlG.5 Pa以下之壓力後，利用高壓 脈衝電源㈣複頻㈣G Hz、導通時.作比㈣使峰值 電[上升直至峰值電流為3 mA，並在該狀態下攝影勞光板 之發光狀態。 (實施例1) 圖8 (a)係顯示在實施例1之成膜步驟中排列線型基板之情 況之模式圖’圖8(b)係顯示在實施⑴製造之具碳膜之線型 基板之發光情況之照片。 本實知例中’在成膜步驟，如圖8⑷所示’於直流電聚 CVD裝置100之陽極lla之上側载置面爪，以平坦面22為 底面、曲面21為上表面之方式分離排列線型基板2〇，並於 各線型基板20間配置間隔件4〇。 直流電漿CVD裝置1〇〇之陰極及陽極之直徑為8〇 mm， 陰極與陽極之間的距離為6〇 mm，且使陰極與陽極平行對 向而配置。 線型基板20與間隔件40之數量分別設為各丨〇條。 作為線型基板20 ’使用藉由將1 ^ηιΦX3 5 mm之導電性 陶瓷基板於其長度方向（圖2(a)中，以兩箭頭B所示之方向） 平行切斷而設置平坦面22者。其高度h(參照圖4)設為〇.8 作為間隔件40 ’使用包含以石墨為主成份之陶瓷之〇 5 mmO之圓柱形狀之間隔件。 成膜步驟之原料氣體之流入量，藉由質量流量控制器設 160167.doc •21- 201230121 為甲烷50 seem、氫500 sccm，並藉由自動控制排氣閥之壓 力控制裝置維持60 Torr。在使腔室内之壓力自真空狀態上 升至8 kPa之過程中，使於陰極—陽極間流動之電流自〇 a 上升至8 A，其後維持8 a。在該狀態下使碳奈米牆成膜2 小時’其後，藉由操作載置面下部之冷卻構件之位置，將 線型基板之溫度維持在93〇〇c，並維持該狀態丨小時半後， 藉由遮斷電力供給而結束成膜。 以上述條件同時製造1 〇條具碳膜之線型基板。 圖8(b)係顯示使用1〇條基於上述方法製造之具碳膜之線 型基板，並根據上述之方法攝影自螢光板之發光狀態之照 片。 圖8(b)所示之照片係自圖7所示之螢光板62之上側攝影 之‘系片。針對據該照片推論之在實施例丨製造之具碳膜之 線型基板之電子放射特性之評估，與在其他之實施例及比 較例所攝影之照片進行比較考察。 又，對於在實施例丨製造之具碳膜之線型基板，於漏斗 型之陽極電極之中心軸配置具碳膜之線型基板而測定有效 電子束"、、射角度，發現有效電子束照射角度為9〇。。測定 有效電子束照射角度時之照片為圖1顯示之照片。 (實施例2) 圖9(a)係顯示在實施例2之成膜步驟中排列線型基板之情 之模式圖，圖9(b)係顯示在實施例2製造之具碳膜之線型 基板之發光情況之照片。 在實把例2中，作為線型基板2〇，使用以其高度為〇.65 160167.doc -22- 201230121 馳之方式切斷者，除此之外，與實施例！同樣進行成膜步 驟並同時製造10條具碳膜之線型基板。 圖9(b)係顯示使用1Q條基於上述方法製造之具碳膜之線 里基板’並根據上述之方法攝影自螢光板之發光狀態之昭 片。 “、、 (實施例3) 圖l〇(a)係顯示在實施例3之成膜步驟中排列線型基板之 情況之模式圖，圖10(b)係顯示在實施例3製造之具碳膜線 型基板之發光情況之照片，圖10(c)係顯示測定在實施例3 製造之具碳膜之線型基板之有效電子束照射角度之情況之 照片。 在實施例3中，不使用間隔件4〇，而使實施例丨使用之線 型基板20鄰接排列，並載置於直流電漿CVD裝置丨之陽 極1 la之上側載置面丨lb，除此之外，與實施例〗同樣進行 成膜步驟，並同時製造1〇條具碳膜之線型基板。 圖10(b)係顯示使用1〇條基於上述方法製造之具碳膜之 線型基板，並根據上述之方法攝影自螢光板之發光狀態之 照片。 測定以實施例3製造之具碳膜之線型基板之有效電子束 照射角度’發現有效電子束照射角度為7〇。。 (實施例4) 圖11(a)顯示在實施例4之成膜步驟中排列線型基板之情 況之模式圖，圖11 (b)係顯示以實施例4製造之具碳膜之線 型基板之發光情況之照片。 I60167.doc -23· 201230121 在實施例4中，不使用間隔件40 ’而使實施例1使用之線 型基板20以間隔〇·5 mm之方式分離排列，並載置於直流電 浆CVD裝置1〇〇之陽極iia之上側載置面llb，除此之外， 與實施例1同樣進行成膜步驟，並同時製造1〇條具碳膜之 線型基板。 圖11(b)係顯示使用10條基於上述方法製造之具碳膜之 線型基板’並根據上述之方法攝影自螢光板之發光狀態之 照片。 (比較例1) 圖12(a)係顯示在比較例1之成膜步驟中排列線型基板之 情況之模式圖，圖12(b)係顯示以比較例1製造之具碳膜線 型基板之發光情況之照片’圖12(c)係顯示測定以比較例！ 製造之具碳膜之線型基板之有效電子束照射角度之情況之 照片。 在比較例1中’取代實施例1之線型基板2〇，使用1 mm<Dx35 mm之不具有平坦面之導電性陶瓷基板（線型基板 200)作為線型基板。 又’不使用間隔件40 ’而使線型基板2〇〇鄰接排列，並 載置於直流電漿CVD裝置100之陽極11 a之上側載置面 11 b ’除此之外，與實施例1同樣進行成膜步驟，並同時製 造1 〇條具碳膜之線型基板。 圖12(b)係顯示使用1〇條基於上述方法製造之具碳膜之 線型基板’並根據上述之方法攝影自螢光板之發光狀態之 照片。 160167.doc -24- $ 201230121 測定以比較例1製造之具碳膜之線型基板之有效電子束 照射角度，發現有效電子束照射角度為30。。 以下，茲考察自據各實施例及比較例所攝影之照片推論 之具碳膜之線型基板之電子放射特性之評估。 在比較例1中’使用不具有平坦面之線型基板進行碳膜 之成膜。因此，來自各具碳膜之線型基板之電子放射特性 不均’且可見發光狀態之偏差。具體而言，在圖12(b)所 示之照片中，雖來自右側之線型基板之電子放射所產生之 發光稍強’但來自其他之線型基板之電子放射所產生之發 光較弱。 由此可知’於以比較例1製造之10條之線型基板上成膜 之電子放射膜之品質有偏差。 測定以比較例1製造之線型基板之有效電子束照射角 度，發現為30。。 在實施例3中’使用具有平坦面之線型基板進行碳膜之 成膜。 觀察圖10(b)所示之照片獲知，發光狀態之偏差小於圖 12(b)所示之照片，且來自各具碳膜之線型基板之電子放射 特性與比較例1相比較均一。 由此可知，藉由使用具有平坦面之線型基板進行碳膜之 成膜’可使經成膜之電子放射膜之品質一定。 測疋以貫施例3製造之線型基板之有效電子束照射角 度，發現為70。，此值較比較例1之有效電子束照射角度更 高。 、、 160167.doc -25- 201230121 在實施例4中’將具有平坦面之線型基板以〇 5 mm間隔 分離配置而進行碳膜之成膜。 觀察圖11 (b)所示之照片，與實施例3相同，發光狀態之 偏差小於圖12(b)所示之照片。但，發光區域較實施例3更 窄。該狀況表示進行有效之成膜之區域變窄。可認為其理 由是’藉由使線型基板彼此分離，線型基板之較高部分之 電場集中變強，從而於基板中產生溫度梯度所致。 在實施例1及實施例2中，於具有平坦面之線型基板之間 配置間隔件而進行碳膜之成膜。 觀察圖8(b)及圖9(b)所示之照片，兩者之情形皆未見發 光狀態之偏差，又，與實施例3及實施例4比較，可獲得較 廣之發光區域（與實施例3比較，增大30 %)。 測定以實施例1製造之線型基板之有效電子束照射角 度，發現為90。’為有效電子束照射角度極高之值。 即，在貫施例1及實施例2進行之步驟中，可製造跨廣範 圍内包含具有均一之電子放射特性之電子放射膜且有效電 子束照射角度大之具碳膜之線型基板。 (第二實施形態） 以下’利用圖式說明作為本發明之具碳膜之線型基板、 具碳膜之線型基板之製造方法及場放射型光源之一實施形 態即第二實施形態。 圖13係模式性顯示本發明之具碳膜之線型基板之另一例 之立體圖。 圖13所示之具碳膜之線型基板2中，線型基板2〇〇為圓柱 160167.doc -26- 201230121 形狀，其在不具有平坦面之點與第一實施形態之具碳膜之 線型基板1不同。 具碳膜之線型基板2,於曲面221形成作為電子放射膜之 碳膜230，曲面221與碳膜230之構成與第一實施形態之具 碳膜之線型基板1之曲面21與碳膜30之構成相同。 又，具碳膜之線型基板2之其他構成，與第一實施形態 之具碳膜之線型基板1之構成相同。 即’具碳膜之線型基板2亦具有如下之特性：若於圓筒 型或漏斗型之陽極電極之中心軸配置具碳膜之線型基板 2’並藉由於陽極電極與線型基板之間施加電壓而進行電 子放射時’來自碳膜之有效電子束照射角度超過3〇。且為 95°以下。 在本發明之第二實施形態之具碳膜之線型基板之製造方 法中，藉由使用於陽極載置面具有凹槽之成膜裝置，並於 上述凹槽載置線型基板，使棒狀之基板與成膜裝置之陽極 載置面成為面接觸狀態，從而進行成膜步驟。 除了成膜裝置之陽極載置面具有凹槽、及成膜對象之線 型基板之形狀不同以外，其餘成膜條件皆與第—實施形態 之具碳膜之線型基板製造方法中說明之條件相同，因此省 略詳細之說明。 _顯示於具有凹槽之陽極載置面上排列線型基板之 形態之一例之模式圖。 圖14係模式性顯示作為圖 β 口所不之直流電漿CVD裝置之 陽極11 a，使用於其上側# 載置面11 b(陽極載置面）設置凹槽 160167.doc -27- 201230121 11 c者之例。 凹槽11c之形狀為將平板削成半圓筒狀之形狀，且具有 剛好容納所要載置之圓柱形狀之線型基板200之曲面221之 曲面。 圖14係模式性顯示於凹槽iic上載置線型基板200之狀 態’棒狀之線型基板與成膜裝置之陽極載置面為面接觸之 狀態。 又’圖14係顯示於線型基板200間配置有間隔件40之 例。 期望的是’在本實施形態之具碳膜之線型基板之製造方 法中’亦將基板以各基板彼此分離之方式排列，且於上述 基板間配置其高度h低於上述基板之高度η之棒狀之間隔 件，從而進行上述成膜步驟。 於圖14中顯示有本實施形態之間隔件之高度h及基板之 尚度Η。 第—貫細1形態之具碳膜之線型基板之製造方法之間隔件 之局度h，與第一實施形態之具碳膜之線型基板之製造方 法之間隔件之高度h同樣定義為距離載置面之平板之部分 之向度。 又’基板之高度Η係忽視線型基板中埋入凹槽1丨c内之部 刀之尚度，而定義為距離陽極載置面之平板之部分之古 度。 円 圖14中雖顯示於成膜裝置之陽極載置面設置用以載置線 型基板之凹槽1 lc之例，但亦可進而設置用以載置間隔件 160167.doc -28· 201230121 之凹槽。 於凹槽内載置間隔件之情形之間隔件之高度’與圖14所 不之基板之高度Η同樣地忽視間隔件中埋入凹槽内之部分 之高度，而定義為距離陽極載置面之平板之部分之高度。 本發明之第二實施形態之場放射型光源將本實施形態之 具碳膜之線型基板作為構成射極電極之材料使用。 由於本發明之第二實施形態之場放射型光源與本發明之 第一實施形態之場放射型光源之具碳膜之線型基板之構成 不同，但其他之構成相同，且其功能亦相同，因此省略詳 細之說明。 (其他實施形態） 於圖6所示之本發明之場放射型光源中亦可配設散熱構 件。 ”’、 期望的是，散熱構件配設於真空密封容器之外周面上之 對應於形成有螢光體層之部位之部位。 若於該部位配設散熱構件，則因電子碰撞於螢光體層電 子而產生之熱會自螢光體層經過陽極電極、真空密封容器 傳導至散熱構件，並自散熱構件迅速散熱。從而，防止螢 光體層之溫度上升。其結果，可在高發光效率下持續發 光。 作為散熱構件，可適宜使用包含熱傳導率較高之金屬材 料之金屬薄片，特別是包含散熱片之金屬薄片。 在圖6中，作為本發明之場放射型光源，雖揭示電子照 射面發光利用型FEL之例，但本發明之場放射型光源亦^ 160I67.doc 201230121 為透射光利用型FEL。 作為本發明之場放射型光源之透射光利用型FEL，具備 將内部密封為真空之真空密封容器、配設於真空密封容器 内之本發明之具碳膜之線型基板、形成於真空密封容器之 内壁面之螢光體層、及形成於螢光體層上之陽極電極。 於透射光利用型FEL中，自碳膜放射之電子藉由施加於 電極間之電壓而被加速後’入射至陽極電極。具有高運動 能量之電子貫通由薄膜形成之陽極電極，並入射至螢光體 層。透射光利用型FEL藉由向該螢光體層入射之電子使螢 光體激發發光’並使該光通過塗布螢光體之真空密封容器 而放射至外部，藉此獲得照明光。 本發明之具碳膜之線型基板’亦可適宜作為透射光利用 型FEL之射極電極使用。 【圖式簡單說明】 圖1係顯示於漏斗型之陽極電極之中心轴配置具碳膜之 線型基板而測定有效電子束照射角度之情況之照片。 圖2(a)係模式性顯示本發明之具碳膜之線型基板之一例 之立體圖’圖2(b)係圖2(a)所示之線型基板之a線剖面 圖。 圖3係顯不本發明之具碳膜之線型基板的製造方法之成 膜步驟之情況之模式圖。 圖4係顯示設其早柏；& 一 共十土-面為底面而排列線型基板之形態之 一例之模式圖。 圖5係顯示設盆年±曰品达— 、十一面為底面而排列線型基板之形態之 160167.doc 201230121 另一例之模式圖 圖6係模式性顯示 & M 本發月之具碳膜之線型基板作為構 成射極電極之材料传 剖面圖。 之本^之場放射型光源之-例之 圖7係模式性顯示發光評估裝置之立體圖。 :()系.„·員不在實施例1之成膜步驟排列線型基板之情況 H圖8(b)係顯示在實施例❻造之具碳膜之線型基 板之發光情況之照片。 圖9(a)係顯示在實· μ你丨& ^ 貫轭例2之成膜步驟排列線型基板之情況 之模式圖，圖9(b)係Α者# /,、 )宁..肩不在貫施例2製造之具碳膜之線型基 板之發光情況之照片。 •圖乂)係顯不在貫施例3之成膜步驟排列線型基板之情 '弋圖圖10(b)係顯示在實施例3製造之具碳膜線型 基板之發光情況之照片，圖1G⑷係顯示測定在實施例3製 -炭膜之線型基板之有效電子束照射角度之情況之照 片。 圖11(a)顯示在f施例4之成膜步驟排列線型基板之情況 之模式® ® 11⑻係顯示在實施例4製造之具碳膜之線型 基板之發光情況之照片。 圖12(a)係顯示在比較例丨之成膜步驟排列線型基板之情 況之杈式圖，圖12(b)係顯示在比較例丨製造之具碳膜線型 基板之發光情況之照片，圖12(c)係顯示測定在比較例J製 造之具碳膜之線型基板之有效電子束照射角度之情況之照 片。 160l67.doc -31 - 201230121 圖13係模式性顯示本發明 之立體圖。 之具碳骐之線型基板之另一例 圖14係顯示於具有 形態之一例之模式圖 凹槽之陽極載置面上排列線型基板之 【主要元件符號說明】 具碳膜之線型基板 20 ' 200 線型基板 21 ' 221 曲面 22 平坦.面 30 > 230 碳膜 40 間隔件 50 場放射型光源 51 真空密封容器 52 螢光體層 53 陽極電極 100 直流電漿CVD裝置 160167.doc •32·201230121 SUMMARY OF THE INVENTION [Technical Field] The present invention relates to a linear substrate having a carbon film, a method of manufacturing a linear substrate having a carbon film, and a field emission type light source. [Prior Art] In recent years, research on a Field Emission Light (hereinafter referred to as FEL) for illumination or display has been progressing, and a cathode for field emission of a field emission type light source (also referred to as an emitter) The electrode or the cathode electrode is known to have an ND/CNW layer formed by laminating a nanocrystalline diamond layer (ND layer) and a carbon nanowall layer (CNW layer) on a substrate. Patent Document 1 describes a method of fixing a substrate such as nickel to a mounting surface of an anode of a direct current plasma CVD apparatus using a direct current plasma CVD apparatus, and exposing it to a mixture of a hydrogen gas and a carbon-containing compound gas. A plasma generated in the gas, thereby forming an ND/CNW layer. As the electrode used for the field emission cathode of FEL, an ND/CNW layer as an electron radiation film is provided on the linear emitter electrode substrate. As the "linear substrate" as used herein, a rod-shaped substrate such as a cylindrical shape is generally used. The ND/CNW layer of the electron radiation film is formed by exposing a linear emitter electrode substrate placed on the anode electrode to a plasma generated in a mixed gas of a hydrocarbon gas and a hydrogen gas by a direct current plasma CVD apparatus. . [Problems to be Solved by the Invention] The problem of the invention is to carry out the linear emitter electrode substrate on the anode electrode of the direct current plasma CVD mounting. When the ND/CNW layer is formed, the electron emission characteristics of the respective linear emitter electrode substrates are different. The inventors of the present invention investigated the causes of the different electron emission characteristics of the linear emitter electrode substrate, and as a result, found the following problems. First, since the contact area of the linear emitter electrode substrate with respect to the anode electrode on which the linear emitter electrode substrate is placed is small, and the above contact areas of the respective substrates are different, heat conduction between the anode electrode and the linear emitter electrode substrate is unstable. . Therefore, in the formation process of the ND/CNW layer, the film formation temperature is different between the plurality of linear emitter electrode substrates simultaneously formed, and the quality of the formed electron film is not determined. Therefore, there is a problem that the deviation of the electron emission characteristics between the in-line type emitter electrode substrates is large. Further, the breadth of the film formation region (hereinafter also referred to as the effective electron beam irradiation angle) at which the effective electron emission characteristics can be obtained is obtained for the linear emitter electrode substrate obtained by the above method, and the value cannot be said to be very large, and effective electrons are desired. A linear emitter electrode substrate having a larger beam irradiation angle. The present invention has been made to solve the above problems, and an object thereof is to provide a linear substrate having a carbon film having a large electron beam irradiation angle and an electron emission film having uniform electron emission characteristics on a linear substrate to produce a carbon film. A method of a linear substrate. Further, it is an object of the invention to provide a field emission type light source having a ruptured film type substrate which has a large angle of irradiation with an effective electron beam. 160167.doc 201230121 Technical Solution to Problem The fourth embodiment of the present invention includes a substrate for cutting a k-substrate and a carbon film containing a nano-diamond/carbon nanowall formed on the curved surface, and is of a cylindrical type or a funnel type. When the central axis of the anode electrode is disposed on the linear substrate having the carbon film, electron emission is performed by applying a voltage between the anode electrode and the linear substrate, and the m sub-beams from the above (4) are more than 3 照. And is 95. the following. Fig. 1 is a photograph showing a case where a linear substrate having a carbon film is placed on a central axis of a funnel-type anode electrode to measure an effective electron beam irradiation angle. The photograph shown in Fig. 1 shows that the linear substrate of the carbon film of the cookware is disposed as an emitter electrode on the anode of the funnel-type anode electrode of the inner coated phosphor, and is in the vacuum at the anode electrode. When a voltage is applied between the linear substrate and the linear substrate, the electron beam is emitted from the carbon film to the anode electrode of the phosphor, thereby causing the phosphor to emit light. In the center of the funnel-type vacuum-sealed container, a linear substrate having a carbon film is disposed, and a voltage is applied between the anode electrode and the linear substrate, and a region where light is emitted by electron emission from the linear substrate is whitened. The measurement conditions of the above photographs were input electric power hi W (〇. 2 mA, 5.5 kv), and the degree of vacuum was 3 to 4 x 10 · 5 pa. Further, at both ends of the emitter electrode, the electric field intensity on the surface of the carbon film-line substrate is adjusted in such a manner that the electron beam irradiation density to the phosphor in the direction parallel to the central axis is the same. The feeding portion and the cap portion of the linear substrate having a larger diameter. In the above photograph, the angle obtained by the boundary line between the region where the light is emitted and the region where the light is not emitted is the effective electron beam irradiation angle from the central axis of the funnel-type vacuum-sealed container 昼 160167.doc 201230121. The photograph shown in Fig. 1 is an example of measuring the effective electron beam irradiation angle using the linear substrate having the carbon film of the present invention, and the effective electron beam irradiation angle is 90°. The carbon film having the effective electron beam irradiation angle determined by the present invention has a carbon film. The linear substrate has a film-forming region that can obtain effective electron emission characteristics over a wide range. Therefore, it can be suitably used as a material for forming an emitter electrode of a field emission type light source. The angle of the effective electron beam irradiation described above was 70. ~90. . A plurality of linear substrates having a film are arranged as an emitter electrode substrate in a circumferential direction to achieve 360. In the case of electron emission, if the effective electron beam irradiation angle is small, a slit is likely to occur. And if the effective electron beam irradiation angle is small, 36 turns are achieved without gaps. The number of emitter electrode substrates required for the electron emission is bound to increase. If the effective electron beam irradiation angle is 70. As described above, it is preferable to reduce the number of the emitter electrode substrates for achieving electron emission of 360°. In the linear substrate having a stone-reflecting film of the present invention, it is preferable that the rod-shaped substrate has a rod shape having a curved surface and a flat surface. When a rod-shaped substrate having a flat surface is used, the substrate can be easily formed on the curved surface by arranging the substrate with the flat surface as the bottom surface and the curved surface as the upper surface on the anode mounting surface of the film forming apparatus. An electron-emitting film with uniform electron emission characteristics is therefore preferable. 160167.doc 201230121 The method for producing a carbon-based linear substrate of the present invention, comprising: a step of preparing a rod-shaped substrate; and a step of arranging the plurality of substrates on an anode mounting surface of the forming device; and a film forming step of forming a carbon film on the surface of the substrate; and performing a film forming step in a state in which the substrate is in surface contact with the anode mounting surface of the film forming apparatus. When the film forming step is performed in a state in which the rod-shaped substrate is in surface contact with the anode mounting surface of the film forming apparatus, the contact area between the anode mounting surface and the linear substrate is large, and the anode mounting surface is stably loaded. Wire-type substrate. Therefore, the heat conduction between the anode electrode and the linear substrate is stabilized, so that the film formation temperature between the plurality of linear substrates simultaneously formed can be uniformized. Moreover, the quality of the film-formed electron-emitting film can be made constant. As a result, an electron-emitting film having uniform electron emission characteristics can be formed to produce a linear substrate having a carbon film. In the method for producing a linear substrate having a carbon film according to the present invention, it is preferable that the rod-shaped substrate has a rod shape having a curved surface and a flat surface, and the flat surface is a bottom surface and the curved surface is an upper surface (four) The above film forming apparatus: % pole mounting surface. The anode mounting surface of the film formation is generally in the shape of a flat plate. Therefore, by arranging the flat surface of the ::: base as the bottom surface, the rod-shaped substrate can be brought into surface contact with the anode mounting surface of the device and the device. :: In the manufacturing method of the carbon-based linear substrate, it is preferable to set m “η手牛 uR” in the cross section cut in a direction perpendicular to the longitudinal direction thereof, and the curved surface is approximated Circle. When the distance from the flat surface is d, 160167.doc 201230121 0 <d The relationship of <0.8xR is established. The distance d as used herein is defined as the distance in which the flat surface is located below the center 0 in the film forming step. The distance d at which the flat surface is located above the center 〇 is set to the value of the note minus sign. Therefore, the flat surface is located above the center , and is set to d. <〇. If it is 0 In the case of <d, since the curved surface formed by the electron-emitting film is larger than the area of the semicircle in the case of assuming a circle having the radius of curvature R as the linear substrate, a film-forming region in which effective electron emission characteristics can be obtained can be obtained over a wide range. . Also, if d <〇.8xR, since the width of the flat surface is wide enough, the contact area of the linear substrate is sufficiently large, and the linear substrate is stably placed on the anode mounting surface, which is preferable. In the method for producing a linear film having a carbon film according to the present invention, it is preferable that the anode mounting surface on which the film formation is placed has a groove, and the rod-shaped substrate is placed in the groove. When the anode mounting surface has a groove, the rod-shaped substrate can be brought into surface contact with the anode mounting surface of the film forming apparatus by placing the rod-shaped substrate on the groove. In the method for producing a linear film having a carbon film according to the present invention, preferably, the substrate is arranged such that the substrates are separated from each other, and a rod having a height h lower than a height η of the substrate is disposed between the substrates. The film forming step described above is carried out. The inventors have found that the film formation can be performed by arranging the linear substrate without any gaps, and the film formation region in which effective electron emission characteristics can be obtained can be obtained only in a narrow region near the top of the linear substrate. It is inferred that the reason is that the active species of the gap portion formed between the linear substrates of the shape 160167.doc 201230121 are less. Further, in the case where the linear substrates are separated and arranged to form a film, it is only possible to obtain a film forming region in which a stable t electron emission characteristic can be obtained in a narrow region. For this reason, it is presumed that the concentration of electricity in the vicinity of the top of the linear substrate is increased, and the electrons in the plasma are concentrated, so that the temperature gradient near the top of the linear substrate and the vicinity of the bottom surface is increased. In the method for producing a linear film having a carbon film according to the present invention, the substrate is arranged such that each of the substrates is separated from each other, and a height of h between the substrates is set to be smaller than a height H of the substrate. Since there is a valley between the linear substrates, the active species are wound back, and since the electric field concentration in the vicinity of the top of the linear substrate is moderated, a film formation region in which effective electron emission characteristics can be obtained can be obtained over a wide range. As a result, an electron-emitting film having uniform electron emission characteristics can be formed in a wide range to produce a linear substrate having a carbon film. In the method for producing a linear film having a carbon film of the present invention, it is preferable that the relationship between the height Η of the substrate and the height h of the spacer is h = 0.5 x H 0 0. If h is less than 0.5 χΗ, or h exceeds 0.8 χΗ, the effective electron beam irradiation angle of the obtained linear film having a carbon film is reduced to 70. The following trends. In the method for producing a linear film having a carbon film of the present invention, it is preferable that the spacer is graphite, ceramics containing a graphite as a main component, a key, a crane, and a titanium. The %·material does not act as a catalyst for the growth of carbon materials, and is more desirable because it has a higher height, 160167.doc -9-201230121. In the method for producing a linear film having a carbon film of the present invention, it is preferred that the film forming step is performed by plasma CVD. In the film formation by plasma CVD, the effect of the present invention, that is, the effect of uniformizing the film formation temperature among a plurality of linear substrates simultaneously formed into a film can be exhibited. The field radiation type light source of the present invention is characterized in that the linear substrate having the carbon film of the present invention is provided as a material constituting the emitter electrode. Such a field-type radiation source can be suitably used as a light source having excellent light-emitting characteristics because it has a carbon-coated linear substrate having a large electron beam irradiation angle as a material for forming an emitter electrode. Advantageous Effects of Invention The linear substrate having a carbon film of the present invention can be suitably used as a material for forming an emitter electrode of a field emission type light source because it has a film formation region in which an effective electron emission characteristic can be obtained over a wide range. Further, in the method for producing a linear film having a carbon film of the present invention, a linear film having a carbon film can be produced by forming an electron emitting film having uniform electron emission characteristics on a linear substrate. Further, the field-type radiation source of the present invention using the carbon-based linear substrate of the present invention as a material constituting the emitter electrode can be suitably used as a light source having excellent light-emitting characteristics. [Embodiment] (First Embodiment) Hereinafter, a linear substrate having a carbon film according to the present invention, a method for producing a linear substrate having a carbon film of 160167.doc 201230121, and an embodiment of a field emission type light source will be described with reference to the drawings. The first embodiment. First, a linear substrate having a carbon film according to the first embodiment will be described. Fig. 2(a) is a perspective view showing an example of a linear substrate having a carbon film of the present invention, and Fig. 2(b) is a cross-sectional view taken along line A-A of the linear substrate shown in Fig. 2(a). In the linear substrate having a carbon film shown in Fig. 2 (a) and Fig. 2 (b), a carbon film 30 as an electron emitting film is formed on a curved surface 21 of a linear substrate 2 of a rod shape. The linear substrate 20 has a shape in which one of the columns is cut in parallel in the longitudinal direction thereof (Fig. 2 (in the direction indicated by the two arrows B), and the cut surface is the flat surface 22. Fig. 2(b) A cross-sectional view of a linear substrate having no carbon film. The cross-sectional shape of the linear substrate 20 is a circle having a center 〇 and a radius R, and the shape of the assumed circle is cut by a straight line from the center 为 d. The straight line of the cut corresponds to the flat surface 22. The curve of the outer circumference of the circle corresponds to the curved surface 21. It is desirable that the relationship between the ruler and the d is satisfied in the linear substrate of the carbon film of the present embodiment. <d <〇.8xR relationship. The type of the linear substrate 20 is not particularly limited, and an electrode used as an emitter electrode of fel can be used. Among them, it is preferred that the conductive ceramics or the electrode containing the ceramics containing q. It is said that if it is a material such as Daban, it is similar to the thermal expansion rate of the carbon film formed thereon, so that peeling between the linear substrate and the carbon film due to thermal expansion can be prevented. The carbon film 30 is formed of an ND/CNW layer composed of a laminate of a nanodiamond layer (ND layer) and a carbon nanowall layer 160167.doc 11 201230121 (CNW layer). When a linear substrate 1 having a carbon film is disposed on a central axis of a cylindrical or funnel-shaped anode electrode, and electron emission is performed by applying a voltage between the anode electrode and the linear substrate, an effective electron beam irradiation angle from the carbon film is obtained. More than 30° and 95. the following. An outline of a method for measuring the effective electron beam irradiation angle is shown in Fig. 1 and its description. Next, a method of producing a linear substrate having a carbon film of the present invention will be described. Fig. 3 is a schematic view showing a state of a film forming step of a method for producing a linear film of a carbon film of the present invention. A DC plasma CVD apparatus 1 used in the film forming step is shown in FIG. The DC plasma CVD apparatus 1 is a device for forming a carbon film on the surface of a linear substrate 2 to be processed, and includes a chamber 10 for isolating the linear substrate 2 from the outside air. A platform U is disposed in the chamber H), and a disk-shaped anode 11a is mounted on the upper portion of the platform u. The plurality of linear substrates 2 are placed on the upper side mounting surface 11b of the anode 11a with their flat faces 22 below. Further, the spacer 4〇 to be described later is also placed on the upper side mounting surface lib of the anode i la. Both the platform 11 and the anode 11a are set to rotate about the axis. The cooling member 配置 is disposed on the lower surface side of the mounting surface of the anode 1 la, and the cooling member 12 is moved up and down by a moving mechanism (not shown). The cooling member 12 is formed of a metal having a high thermal conductivity such as copper, and is internally cooled by a water such as water (not shown) or a chlorine (tetra) aqueous solution to cool the cooling member (four) 160167.doc 201230121. Therefore, the cooling member 12 abuts against the anode 11a by moving to the upper side, and carries the heat of the linear substrate 2 through the anode iia. A cathode 13 is disposed above the anode 11a at a predetermined distance from the anode 11a. A flow path 丨3a through which the refrigerant flows is formed inside the cathode 13, and a tube 13b and a tube 13c are attached to both ends of the flow path. The tube i3b and the tube 13c are formed in a hole formed in the cavity to 10 to communicate with the flow path 13a. The tube 13b and the tube 13c pass through the hole of the chamber 1〇 to be sealed with a sealant, thereby ensuring the airtightness in the chamber 1〇. The refrigerant flows through the tube 13b, the flow path 13a, and the tube 13c, thereby suppressing the heat generation of the cathode 13. As the refrigerant, water, an aqueous calcium carbonate solution, air, an inert gas or the like is preferred. A window 14 is formed on the side of the chamber 10 so that observation in the chamber 1 can be performed. The glass is embedded in the window 14 to ensure airtightness in the chamber 1 . A radiation thermometer 15 for measuring the temperature of the linear substrate 2 is disposed on the outer side of the chamber 10 via the glass of the window 14. The DC plasma CVD apparatus 1A includes a raw material system (not shown) that introduces a material gas through the gas supply pipe 16 and an exhaust system (not shown) that passes through the exhaust pipe 17 from the chamber. The gas is exhausted in one turn to adjust the gas pressure in the chamber 10; and the output setting portion 18 is output. Each of the tubes 16, 17 passes through a hole provided in the chamber 10. The hole is sealed with a sealing material between the outer circumference of the tubes 16, 17 and the chamber 10 to ensure airtightness in the chamber 1 . The output setting unit 18 is a mechanism for setting the voltage or current density between the anode 11 a and the cathode 13 and the output setting unit 18 is connected to the anode Ua and the cathode 13 by 160167.doc 201230121. ] 0 hole. The hole of the chamber 10 through which the lead is passed is sealed with a sealing material. The output setting unit 18 includes a control unit 18a that is connected to the radiation thermometer 15 by a lead wire. After the control unit 18a is activated, the film formation surface of the linear substrate 2 is referred to by the emissivity of the film formation surface of the linear substrate 2 measured by the radiation thermometer 15 and with reference to the temperature of the film formation surface of the linear substrate 20. The voltage or current density between the anode 11a and the cathode 13 is adjusted in such a manner that the temperature becomes a predetermined value. Hereinafter, a specific form in which the linear substrate 20 is placed on the upper surface 11b of the anode 11a when the carbon film 30 is formed on the surface of the linear substrate 20 by using the above-described direct current plasma CVD apparatus 100 will be described in detail. Fig. 4 is a schematic view showing an example in which the flat surface of the linear substrate is arranged as a bottom surface. Fig. 4 shows a cross section in which a linear substrate is cut in a cross section perpendicular to the longitudinal direction thereof (the same cross section as Fig. 2(b)), and a plurality of linear substrates 2 are arranged in such a manner that the linear substrates 2 are separated from each other. Further, each of the linear substrates 20 is arranged such that the flat surface 22 is the bottom surface and the curved surface 2 is the upper surface. A spacer 4 is disposed between the linear substrates. The spacer 4 is a rod-like member having a height 匕 lower than the height of the substrate. The height h of the spacer is the height from the flat plate when the spacer is placed on the flat surface such as the mounting surface. When the shape of the spacer is a cylindrical shape, 4 heights 直径 diameter-induced. The shape of the spacer is other than the shape of the cylinder, and the height of the spacer is different depending on which part of the spacer is placed on the mounting surface, and the spacer is placed on the flat surface such as the mounting surface. When the height of the flat plate is the lowest, the height from the flat plate is set to the height h of the spacer. The height 基板 of the substrate is the height from the flat plate when the flat surface of the substrate is placed on the flat surface such as the mounting surface. Desirable S is the case where the spacer is used in the method of manufacturing a linear film having a carbon film according to the present embodiment. The height of the substrate (10) The relationship of the width h of the spacer is h = 5.5xH to 〇.8χΗ. The material of the spacer 40 is not particularly limited, but is preferably a metal material that does not contain iron, cobalt, and nickel. As a specific material, graphite, graphite-based ceramics, #目, crane, or chin can be used. 5 is a schematic view showing another example in which the linear substrate is arranged with the flat surface as the bottom surface, and the configuration shown in FIG. 4 is different. FIG. 5 shows a configuration in which the plurality of linear substrates 2 are connected to each other. In the form shown in Fig. 5, a spacer is not disposed between the respective linear substrates. Next, a film forming step of forming a carbon film into a film using a direct current plasma CVD apparatus shown in Fig. 3 to form a carbon film will be described. Hereinafter, in the film formation step, a method of forming a carbon nanowall and a carbon film (ND/CNW layer) including a plurality of diamond fine particles formed on a carbon nanowall on the surface of the linear substrate will be described as an example. Membrane step. First, a linear substrate in which a part of a linear substrate having a cylindrical shape of a conductive ceramic is cut in parallel in the longitudinal direction is prepared (see Figs. 2(a) 160167.doc •15·201230121 and Fig. 2(b)). Further, a spacer having a cylindrical shape containing ceramics containing graphite as a main component is prepared. Then, in the arrangement shown in FIG. 4, the surface nb (anode mounting surface) is placed on the upper side of the anode Ua of the direct current plasma cVD device 100, and the flat surface 22 is the bottom surface and the curved surface 21 is the upper surface. The linear substrate 20' is separated and arranged, and a spacer 4 is disposed between the linear substrates 20. Then, the inside of the chamber 1 is decompressed by the exhaust system, and then a gas (carbon-containing compound) such as a hydrogen-containing compound such as hydrogen gas or decane is introduced from the gas supply pipe 16 for gas supply. The tube 16 may be provided with a tube different for each of the hydrogen gas and the methane, or may be collected as a mixed gas. It is desirable that the gas in the material gas in which the compound containing carbon in the composition is in the range of 3 vol% to 30 vol% of the king body. For example, the flow rate of the brothel is 50 seem, the flow rate of the sputum is 5 〇〇 seem, and the total pressure is 0.05~1.5 atm, preferably 〇.07~ο.] atin. Further, each of the linear substrates 20 rotates the anode 11a at 10 rpm, and a DC power source is applied between the anode π a and the cathode 13 so that the temperature on the linear substrate 2 is not within 5%, so that plasma is generated. Control the plasma state and the temperature of the linear substrate 2〇. In the film formation of the carbon nanowall, the temperature at the portion where the carbon nanowall of the linear substrate 20 is formed (on the curved surface 21) is 900. Film formation at a specific time was carried out at a temperature of 1:100 ° C. The radiation on the film formation surface of the carbon nanowall was measured by a radiation thermometer 15. At this time, the cooling member 12 was sufficiently separated so as not to affect the temperature of the anode ila. The radiation thermometer 15 is set by subtracting the electro-radiation radiation of the direct current plasma CVD apparatus and obtaining the temperature only from the heat radiation of the surface of the linear substrate 20 side. The carbon nanometer wall as the bottom layer is set by the formula 160167.doc • 16· 201230121 After sufficient film formation, the cooling member 12 which is much lower than the temperature of the anode 1 la heated by the plasma is continuously raised and abuts against the lower surface of the anode 11a without changing the gas atmosphere. At this time, the cooled anode 11a is such that the linear substrate 2 affixed thereto is cooled to cool the surface of the linear substrate 20 side to a suitable temperature for forming a plurality of diamond fine particles which are 10 ° C or more lower than that of the carbon nanowall. The temperature is set to 890 ° C to 950 ° C. More preferably, it is 920 ° C to 940 ° C. Since the carbon nanowall is a sp2 bonded graphite structure, the emissivity is approximately 1, so if carbon nanotubes are used The wall is used as the underlying film by making it The emissivity of the upper part is matched with the diamond fine particles as the main component, and the emissivity is 〇7, and the film formation state of the diamond fine particles can be grasped, and stable temperature measurement can be performed. By rapid cooling, the growth of the carbon nanowall is stopped, and With the carbon nanowall as the core, a plurality of diamond microparticles begin to grow, and finally a plurality of diamond microparticles containing sp3 bonds with a particle diameter of 5 nm to 10 nm are formed on the carbon nanometer wall and interposed in the gap between the diamond microparticles. In the above-described step, a carbon film 30 (ND/CNW layer) is formed on the curved surface 21 of the linear substrate 20 by the above-described step, thereby producing a tool. In the film forming step, the linear substrate 2 is placed on the upper surface 11b of the anode 11a of the DC plasma CVD apparatus 100 with the flat surface 22 as the bottom surface. In this case, since the contact area between the linear substrate 2 and the anode ua is large and the thermal conductivity is high, when the cooling member 2 is moved up and down, the temperature of the linear substrate 20 changes rapidly, and it is easy to be cooled. The temperature control of the linear substrate 2 is performed by raising and lowering the member 12. 160167.doc -17- 201230121 Therefore, the quality of the electron-emitting film formed by the film can be made constant. Further, since the linear substrate 20 is prevented from rolling, film formation is also prevented. The surface-type substrate having the carbon film of the present invention is used as the field-radiation type light source of the present invention which is used as a material constituting the emitter electrode. Fig. 6 is a view schematically showing a linear substrate having the carbon film of the present invention. A cross-sectional view of an example of the field emission type light source of the present invention used as a material constituting the emitter electrode. The field emission type light source 50 shown in Fig. 6 is provided with a vacuum sealed container 51 that seals the inside into a vacuum, and is disposed in a vacuum seal. A linear substrate having a carbon film as an emitter electrode in the container 51; an anode electrode 53 disposed on one of the inner wall surfaces of the vacuum sealed container 51; and a phosphor layer 52 formed on the anode electrode 53. A linear film having a carbon film as an emitter electrode is formed on the curved surface 21 of the linear substrate 2, and a carbon film 3 is formed, and the carbon film 3 is disposed to face the phosphor layer. The vacuum sealed container 51 is cylindrical and formed of glass having high transmittance for visible light. The linear substrate having a carbon film as an emitter electrode is a linear electrode disposed at the center of the vacuum sealed container 51. Compared with a parallel plate-shaped electrode, a linear electrode can produce a souther electric field strength on an electrode panel, which is advantageous. The anode electrode 53 includes a metal film or a metal oxide film, and is formed in a portion of the inner wall surface of the vacuum sealed container, specifically, a portion below the lower half of the cylinder. Examples of the type of the metal film constituting the anode electrode include an oxygen film I60l67.doc • 18-201230121, a carbon film, and the like. Examples of the type of the metal oxide film include Sn〇2, 丨~... and the like. These metal films and metal oxide films can be suitably formed depending on the material selection method such as a vapor deposition method or a sputtering method. Further, in the case where the diameter of the vacuum-sealed container is small, the sol-gel method or the electroless ore method may be applied instead of the method such as the vapor deposition method or the pulverization method. As the phosphor layer 52, for example, a Pl5 phosphor (Zn〇: Zn), a P22 phosphor (blue: ZnS: Ag, α; ZnS: Ag, ^; green:: Cu ' A1 ; ZnS : Cu,) can be used. Au ' A1 ; Red: Y2 〇 2S : Eu3+), p53 luminaire (Y3AL5 〇 12 : Tb3+), and P56 phosphor (γ2 〇 3 : EU3+). Further, the type of the phosphor that emits light by electron beam irradiation is not particularly limited. Further, a transparent protective film may not be formed on the surface of the phosphor layer 52. The transparent protective film is made of any one of indium tin oxide, zinc oxide, or tin oxide which is transparent and has a high conductivity, in order to suppress deterioration by the electron beam irradiation of the phosphor layer 52. By attaching the materials to the phosphor layer 52 at a thickness of 1 〇〇 2 〇〇 2, electrons emitted from the carbon film 30 of the linear substrate having the carbon film reach the phosphor layer 52 and can be unmasked. Light emitted by the phosphor layer 52 is extracted. Further, the deterioration rate of the phosphor of the phosphor layer 52 can be greatly reduced. In the field emission type light source 50 of the above configuration, an electron beam emitted from the carbon film 30 of the linear substrate 1 having a carbon film is incident on the phosphor layer 52, and collides with the phosphor layer 52 to cause the phosphor to emit light. 160167.doc -19- jf _ 201230121 The light from the phosphor is extracted from the opposite side of the phosphor layer (upper side of Fig. 6) to the outside via a vacuum sealed container. The field emission type light source thus constructed is referred to as an electron irradiation surface light-emitting type FEL. The anode electrode 53 contains a film having a high visible light reflectance of the aluminum oxide film. The photons emitted from the phosphor light toward the lower side of Fig. 6 are reflected by the anode electrode 53 and emitted upward. Thus, such a photon is also extracted to the outside from the opposite side to the glory body layer 52 (the upper side in Fig. 6) via the vacuum sealed container 51. (Example) The electron emission characteristics of the linear substrate having a carbon film were evaluated by observing the light emission of the phosphor plate caused by the electron emission of the carbon film of the linear substrate having the carbon film. Figure 7 is a perspective view of a mode display illuminance evaluation device. The illuminating evaluation device 60 is provided with two corner-shaped bars 61a and 61b in the vacuum device, one linear film substrate 1 having carbon films placed on the stages 61a and 61b, and a carbon film. A device for the phosphor plate 62 at a position where the carbon film 3 of the linear substrate 1 is opposed. The stage 61a is electrically connected to the terminal of the high voltage pulse source 63, and also has a function of supplying a current to the linear substrate 1 having a carbon film. Further, the phosphor plate 62 is also electrically connected to one end of the high voltage pulse source 63, and also functions as an anode electrode. In each of the embodiments, the height of the stage 61a, 61b is 1 mm, the length of the linear substrate having a carbon film is 35 mm, and the interval between the linear substrates having a carbon film is 7 mm. The apex of the carbon film 3〇 and the fluorescent plate “160167.doc 201230121 are 8 mm apart. After exhausting the pressure in the artificial device to a pressure below 5×1 G.5 Pa, the high-voltage pulse power supply (4) is used for multi-frequency (4) G Hz, when conducting The ratio (4) is such that the peak current [rises until the peak current is 3 mA, and the light-emitting state of the photographic plate is photographed in this state. (Example 1) FIG. 8(a) shows the arrangement in the film forming step of Example 1. FIG. 8(b) is a photograph showing the light-emitting state of the linear substrate having the carbon film produced by (1). In the present example, 'in the film forming step, as shown in FIG. 8(4)' The surface claws are placed on the upper side of the anode 11a of the DC electro-CVD device 100, and the linear substrate 2 is arranged such that the flat surface 22 is the bottom surface and the curved surface 21 is the upper surface, and the spacers 4 are disposed between the linear substrates 20. The diameter of the cathode and anode of the slurry CVD apparatus is 8〇mm, The distance from the anode is 6 〇mm, and the cathode is disposed in parallel with the anode. The number of the linear substrate 20 and the spacer 40 is set to each ridge. The linear substrate 20' is used by 1 ^ The conductive ceramic substrate of ηιΦX3 5 mm is cut in parallel in the longitudinal direction (the direction indicated by the two arrows B in Fig. 2(a)), and the flat surface 22 is provided. The height h (see Fig. 4) is set to 〇 .8 as a spacer 40' using a cylindrical shape spacer containing 5 mmO of graphite-based ceramics. The inflow of the material gas in the film forming step is set by the mass flow controller 160167.doc • 21- 201230121 is methane 50 seem, hydrogen 500 sccm, and maintains 60 Torr by the pressure control device that automatically controls the exhaust valve. During the process of raising the pressure in the chamber from vacuum to 8 kPa, the cathode-anode flow is made. The current rises from 〇a to 8 A, and thereafter maintains 8 a. In this state, the carbon nanowall is formed into a film for 2 hours. Thereafter, by operating the position of the cooling member at the lower portion of the mounting surface, the linear substrate is The temperature is maintained at 93〇〇c and the state is maintained. After a half hour and a half, the film formation was terminated by interrupting the power supply. A linear substrate having a carbon film was simultaneously produced under the above conditions. Fig. 8(b) shows a carbon film manufactured by the above method using a one-shot method. The line type substrate is photographed from the light-emitting state of the phosphor plate according to the above method. The photograph shown in Fig. 8(b) is a 'system piece photographed from the upper side of the phosphor plate 62 shown in Fig. 7. The evaluation of the electron emission characteristics of the linear substrate having the carbon film produced in the example was compared with the photographs taken in the other examples and comparative examples. Further, in the linear substrate having the carbon film produced in the example, a linear substrate having a carbon film was placed on the central axis of the funnel-shaped anode electrode, and an effective electron beam was measured, and an effective electron beam irradiation angle was observed. It is 9 inches. . The photograph when the effective electron beam irradiation angle is measured is a photograph shown in Fig. 1. (Example 2) Fig. 9(a) is a schematic view showing the arrangement of the linear substrate in the film forming step of the second embodiment, and Fig. 9(b) shows the linear substrate having the carbon film produced in the second embodiment. Photo of the illuminating situation. In the second example, as the linear substrate 2, the height is 〇.65 160167.doc -22-201230121, and the method is cut off, and other examples are given! The film forming step was also carried out and 10 linear substrates having a carbon film were simultaneously produced. Fig. 9 (b) shows a state in which a light-emitting state of a fluorescent film is taken by using the 1Q strip-based substrate of the carbon film manufactured by the above method and photographed according to the above method. (Example 3) FIG. 1(a) is a schematic view showing a state in which a linear substrate is arranged in the film forming step of Example 3, and FIG. 10(b) shows a carbon film produced in Example 3. Fig. 10(c) is a photograph showing the measurement of the effective electron beam irradiation angle of the linear substrate having the carbon film produced in Example 3. In Example 3, the spacer 4 was not used. In other words, the film-forming substrate 20 used in the embodiment was placed adjacent to each other and placed on the upper surface 1b of the anode 1 la of the direct current plasma CVD apparatus, and the film formation step was carried out in the same manner as in the example. At the same time, a linear substrate having a carbon film is produced at the same time. Fig. 10(b) shows a linear substrate having a carbon film manufactured by the above method using a single film, and the light-emitting state of the fluorescent plate is photographed according to the above method. Photograph. The effective electron beam irradiation angle of the linear substrate having the carbon film produced in Example 3 was determined to be an effective electron beam irradiation angle of 7 Å. (Example 4) Fig. 11 (a) shows the formation of Example 4. Pattern diagram of the arrangement of the linear substrate in the film step Fig. 11 (b) is a photograph showing the light-emitting state of the linear substrate having the carbon film produced in Example 4. I60167.doc -23· 201230121 In the embodiment 4, the embodiment 1 is used without using the spacer 40'. A film forming step was carried out in the same manner as in Example 1 except that the linear substrate 20 was placed at intervals of 55 mm and placed on the upper surface mounting surface 11b of the anode iia of the DC plasma CVD apparatus. At the same time, a linear substrate having a carbon film is produced at the same time. Fig. 11(b) shows a photograph of a light-emitting state of a fluorescent substrate obtained by using the above-described method of a linear substrate having a carbon film manufactured by the above method. (Comparative Example 1) Fig. 12(a) is a schematic view showing a state in which a linear substrate is arranged in the film formation step of Comparative Example 1, and Fig. 12(b) is a view showing a carbon film-line substrate manufactured in Comparative Example 1. Photograph of the illuminating condition 'Fig. 12(c) shows a photograph of the effective electron beam irradiation angle of the linear substrate having the carbon film produced by the comparative example! In the comparative example 1, the linear substrate 2 of the embodiment 1 was replaced. Oh, use 1 mm <Dx35 mm A conductive ceramic substrate (linear substrate 200) having no flat surface is used as a linear substrate. In the same manner as in the first embodiment, the linear substrate 2 is placed adjacent to each other and placed on the upper surface 11 b of the anode 11 a of the DC plasma CVD apparatus 100 without using the spacer 40 ′. A film forming step, and simultaneously manufacturing a linear substrate having a carbon film. Fig. 12 (b) is a photograph showing the state of light emitted from the phosphor plate by the above method using a linear substrate of a carbon film manufactured by the above method. 160167.doc -24- $201230121 The effective electron beam irradiation angle of the linear substrate having the carbon film produced in Comparative Example 1 was measured, and the effective electron beam irradiation angle was found to be 30. . Hereinafter, evaluation of the electron emission characteristics of the linear substrate having a carbon film inferred from the photographs taken in the respective examples and comparative examples will be examined. In Comparative Example 1, the film formation of the carbon film was carried out using a linear substrate having no flat surface. Therefore, the electron emission characteristics from the linear substrates each having the carbon film are uneven, and the variation in the light-emitting state can be seen. Specifically, in the photograph shown in Fig. 12(b), the light emitted from the electron emission from the linear substrate on the right side is slightly stronger, but the emission from the electron emission from the other linear substrate is weak. From this, it was found that the quality of the electron-emitting film formed on the linear substrates of the ten sheets produced in Comparative Example 1 was different. The effective electron beam irradiation angle of the linear substrate produced in Comparative Example 1 was measured and found to be 30. . In Example 3, a film of a carbon film was formed using a linear substrate having a flat surface. The photograph shown in Fig. 10(b) was observed, and the deviation of the light-emitting state was smaller than that of the photograph shown in Fig. 12(b), and the electron emission characteristics from the linear substrates each having the carbon film were uniform as compared with Comparative Example 1. From this, it is understood that the film formation of the carbon film by using the linear substrate having a flat surface enables the quality of the film-formed electron-emitting film to be constant. The effective electron beam irradiation angle of the linear substrate manufactured in Example 3 was measured and found to be 70. This value is higher than the effective electron beam irradiation angle of Comparative Example 1. , 160167.doc -25- 201230121 In the fourth embodiment, a linear film having a flat surface was separated and disposed at intervals of 〇 5 mm to form a film of a carbon film. Looking at the photograph shown in Fig. 11 (b), the deviation of the light-emitting state is smaller than that of the photograph shown in Fig. 12 (b), as in the third embodiment. However, the light-emitting area is narrower than that of Embodiment 3. This condition indicates that the area where the film formation is effective is narrowed. The reason for this is considered to be that by separating the linear substrates from each other, the electric field concentration of the upper portion of the linear substrate becomes stronger, thereby causing a temperature gradient in the substrate. In the first and second embodiments, a spacer is placed between the linear substrates having flat surfaces to form a film of a carbon film. Looking at the photographs shown in Fig. 8(b) and Fig. 9(b), neither of them shows the deviation of the illuminating state. Further, compared with the third embodiment and the fourth embodiment, a wider illuminating region can be obtained (and In comparison with Example 3, the increase was 30%). The effective electron beam irradiation angle of the linear substrate produced in Example 1 was measured and found to be 90. ' is an extremely high value for the effective electron beam irradiation angle. That is, in the steps carried out in the first embodiment and the second embodiment, a linear substrate having a carbon film having a uniform electron emission characteristic and having a large effective electron beam irradiation angle can be manufactured. (Second Embodiment) Hereinafter, a second embodiment in which a linear substrate having a carbon film, a method for producing a linear substrate having a carbon film, and a field emission type light source are used as the present invention will be described. Fig. 13 is a perspective view schematically showing another example of the linear substrate having a carbon film of the present invention. In the linear substrate 2 having a carbon film shown in FIG. 13, the linear substrate 2 is in the shape of a cylinder 160167.doc -26-201230121, and the linear substrate having the carbon film of the first embodiment is not provided at a point having a flat surface. 1 different. The linear film 2 having a carbon film is formed on the curved surface 221 as a carbon film 230 as an electron emission film, and the curved surface 221 and the carbon film 230 are formed, and the curved surface 21 and the carbon film 30 of the linear substrate 1 having the carbon film of the first embodiment are formed. The composition is the same. Further, the other structure of the linear substrate 2 having a carbon film is the same as that of the linear substrate 1 having the carbon film of the first embodiment. That is, the linear substrate 2 having a carbon film has a characteristic that a linear substrate 2' having a carbon film is disposed on a central axis of a cylindrical or funnel-shaped anode electrode and a voltage is applied between the anode electrode and the linear substrate. In the case of electron emission, the effective electron beam irradiation angle from the carbon film exceeds 3 〇. And it is below 95°. In the method for producing a linear film having a carbon film according to the second embodiment of the present invention, the film forming device having a groove on the anode mounting surface is used, and the linear substrate is placed on the groove to form a rod-shaped substrate. The substrate is brought into surface contact with the anode mounting surface of the film forming apparatus to perform a film forming step. The film forming conditions are the same as those described in the method for producing a linear film having a carbon film according to the first embodiment, except that the anode mounting surface of the film forming apparatus has a groove and the shape of the linear substrate of the film forming object is different. Therefore, the detailed description is omitted. _ is a schematic view showing an example of a configuration in which a linear substrate is arranged on an anode mounting surface having a groove. Fig. 14 is a view schematically showing an anode 11a of a direct current plasma CVD apparatus which is not shown in Fig. 4, and is provided on the upper side #mounting surface 11b (anode mounting surface) to provide a groove 160167.doc -27-201230121 11 c An example of the person. The groove 11c has a shape in which the flat plate is cut into a semi-cylindrical shape, and has a curved surface which just accommodates the curved surface 221 of the linear substrate 200 to be placed in a cylindrical shape. Fig. 14 is a view schematically showing a state in which the groove-shaped linear substrate is placed in contact with the anode mounting surface of the film forming apparatus in a state in which the groove iic is placed on the linear substrate 200. Further, Fig. 14 shows an example in which spacers 40 are disposed between the linear substrates 200. It is desirable that 'in the method of manufacturing a linear substrate having a carbon film according to the present embodiment', the substrate is also arranged such that the substrates are separated from each other, and a rod having a height h lower than the height η of the substrate is disposed between the substrates. A spacer is formed to perform the film forming step described above. The height h of the spacer of this embodiment and the degree of enthalpy of the substrate are shown in Fig. 14. The degree h of the spacer of the method for manufacturing a linear film having a carbon film of the first embodiment is the same as the height h of the spacer of the method for manufacturing a linear substrate having a carbon film according to the first embodiment. The dimension of the part of the flat plate. Further, the height of the substrate ignores the degree of the knives embedded in the grooves 1 丨c in the linear substrate, and is defined as the degree of the portion of the flat plate from the anode mounting surface. Although an example in which the groove 1 lc for mounting the linear substrate is placed on the anode mounting surface of the film forming apparatus is shown in FIG. 14 , a recess for placing the spacer 160167.doc -28· 201230121 may be further provided. groove. The height of the spacer in the case where the spacer is placed in the groove is the same as the height 基板 of the substrate not shown in FIG. 14 , and the height of the portion buried in the recess in the spacer is ignored, and is defined as the distance from the anode mounting surface. The height of the part of the slab. In the field emission type light source according to the second embodiment of the present invention, the linear substrate having the carbon film of the present embodiment is used as a material constituting the emitter electrode. The field emission type light source according to the second embodiment of the present invention is different from the configuration of the linear substrate having a carbon film of the field emission type light source according to the first embodiment of the present invention, but the other configurations are the same and the functions are also the same. Detailed explanations are omitted. (Other Embodiments) A heat dissipation member may be disposed in the field emission type light source of the present invention shown in Fig. 6. "It is desirable that the heat dissipating member is disposed on a peripheral surface of the vacuum sealed container corresponding to a portion where the phosphor layer is formed. If a heat dissipating member is disposed at the portion, electrons collide with the phosphor layer electrons. The generated heat is transmitted from the phosphor layer to the heat dissipating member through the anode electrode and the vacuum sealed container, and rapidly dissipates heat from the heat dissipating member, thereby preventing the temperature of the phosphor layer from rising. As a result, the light can be continuously emitted with high luminous efficiency. As the heat dissipating member, a metal foil containing a metal material having a high thermal conductivity, in particular, a metal foil including a heat sink, can be suitably used. In Fig. 6, as the field emission type light source of the present invention, an electron irradiation surface illumination type is disclosed. An example of the FEL, but the field-radiation light source of the present invention is also 160I67.doc 201230121 is a transmitted light utilization type FEL. The transmitted light utilization type FEL which is the field radiation type light source of the present invention has a vacuum sealed container which seals the inside into a vacuum. The linear substrate with carbon film of the present invention disposed in a vacuum sealed container is formed on the inner wall surface of the vacuum sealed container a phosphor layer and an anode electrode formed on the phosphor layer. In the transmitted light utilization type FEL, electrons emitted from the carbon film are accelerated by a voltage applied between the electrodes, and are incident on the anode electrode. The electrons of the energy penetrate through the anode electrode formed of the thin film and enter the phosphor layer. The transmitted light-use type FEL causes the phosphor to emit light by the electrons incident on the phosphor layer, and passes the light through the coated phosphor. The container is vacuum-sealed and radiated to the outside to obtain illumination light. The linear substrate of the present invention having a carbon film can also be suitably used as an emitter electrode of a transmitted light-utilizing FEL. [Simplified Schematic] FIG. A photograph of a case where a linear film of a carbon film is placed on a central axis of a funnel-shaped anode electrode to measure an effective electron beam irradiation angle. Fig. 2(a) is a perspective view showing an example of a linear substrate having a carbon film of the present invention. Fig. 2 (b) is a cross-sectional view of the linear substrate shown in Fig. 2 (a), and Fig. 3 is a schematic view showing a state of a film forming step of the method for producing a linear substrate having a carbon film of the present invention. Fig. 4 is a schematic view showing an example of a configuration in which a linear substrate is arranged with a total of ten soils-surfaces as a bottom surface. Fig. 5 is a diagram showing that the basin is provided with the bottom surface and the eleven surfaces are arranged on the bottom surface. The shape of the linear substrate is 160167.doc 201230121 Another mode is shown in Fig. 6 is a schematic display & M The linear substrate with carbon film of this month is used as a material transmission cross section of the emitter electrode. Fig. 7 is a perspective view showing a luminescence evaluation device in a mode. Fig. 7 is a case where a member does not arrange a linear substrate in the film forming step of the first embodiment. Fig. 8(b) is shown in the embodiment. Photograph of the luminescence of a linear substrate with a carbon film. Fig. 9(a) is a schematic view showing a state in which a linear substrate is arranged in the film forming step of the real y y y y y y y y y y y y y y y y y y y y y y A photograph of the light-emitting condition of the linear substrate having the carbon film produced in Example 2. Fig. 10(b) shows a photograph of the light-emitting condition of the carbon film-line substrate manufactured in Example 3, and Fig. 1G(4) is a diagram showing the arrangement of the linear substrate in the film forming step of Example 3. A photograph showing the measurement of the effective electron beam irradiation angle of the linear substrate of the carbon film produced in Example 3 was shown. Fig. 11 (a) shows a mode in which the linear substrate is arranged in the film forming step of Example 4, and the pattern ® ® 11 (8) is a photograph showing the light-emitting state of the linear substrate having the carbon film produced in the fourth embodiment. Fig. 12 (a) is a view showing a state in which a linear substrate is arranged in a film forming step of a comparative example, and Fig. 12 (b) is a photograph showing a light-emitting state of a carbon film-line substrate manufactured in a comparative example. 12(c) shows a photograph of the case where the effective electron beam irradiation angle of the linear substrate having the carbon film produced in Comparative Example J was measured. 160l67.doc -31 - 201230121 Fig. 13 is a perspective view schematically showing the present invention. FIG. 14 is a view showing another example of a carbon-based linear substrate. FIG. 14 is a view showing a line substrate which is arranged on an anode mounting surface of a pattern groove having an example. [Main element symbol description] A carbon-based linear substrate 20' 200 line type Substrate 21 '221 Curved surface 22 flat. Surface 30 > 230 Carbon film 40 Spacer 50 Field emission type light source 51 Vacuum sealed container 52 Phosphor layer 53 Anode electrode 100 DC plasma CVD apparatus 160167.doc • 32·