201222709 六、發明說明： 【發明所屬之技術領域】 種具有冷卻模 本發明係有關於一種薄臈沈積裝置，尤其是一 組的薄膜沈積裝置。 【先前技術】 薄膜沈積(Thin Film Deposition)可應用於裝飾品、餐具、 刀具、工具、模具、半導體元件等之表面處理，泛指在各種 材料、超硬合金、陶瓷材料及晶圓基板的表面上，成長—層同 或異質材料薄膜的製程，以期獲得美觀_、耐熱、耐料y性。201222709 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a thin tantalum deposition apparatus, and more particularly to a group of thin film deposition apparatuses. [Previous Technology] Thin Film Deposition can be applied to the surface treatment of decorative articles, tableware, knives, tools, molds, semiconductor components, etc., and refers to the surface of various materials, superhard alloys, ceramic materials, and wafer substrates. On, the process of growing - layer or the same material film, in order to obtain aesthetic _, heat resistance, material resistance y.
薄膜沈積依據沈積過程中，是否含有化學反應的機制，可以 區分為物理氣相沈積（PhySical Vapor Dep〇siti〇n，簡稱pvD) 通常稱為物理蒸鍍及化學氣相沈積（Chemical Vap〇r Deposition，簡稱CVD)通常稱為化學蒸鍍。Thin film deposition can be distinguished as physical vapor deposition (Physical Vapor Dep〇siti〇n, pvD for short) according to the mechanism of chemical reaction during deposition. Chemical vapor deposition and chemical vapor deposition (Chemical Vap〇r Deposition) , referred to as CVD), is commonly referred to as chemical vapor deposition.
曰隨著沈積技術及沈積參數差異，所沈積薄膜的結構可能是『單 晶』、『多晶』、或『非結晶』的結構。單晶薄膜的沈積在積體電路 衣私中特職要’稱為是『蟲晶』（epitaxy)。相較於晶圓基板， 蠢晶成長的半導體薄膜的優點主要有：可以在沈積過程中直接推 雜施體或受體，因此可以精確控·膜巾的『摻f分佈』（d〇_ profile)，而且不包含氧與碳等雜質。 金屬有機化學氣相沉積（Metal_〇rganic Chemical Vap〇r De=ti0n，_ M0⑽），其原理是利用承載氣體&町^挪) 攜帶軋相反應物，或是前驅物進人㈣晶圓的腔體中，晶圓下方 的承載盤（susceptor)以特定方式加熱晶圓及接近晶圓的氣 =因高溫觸發單-或是數魏體_化學反應式，將反應物(通 书為氣體)轉換為固態生成物沉積在晶圓表面的一種薄膜沉積技 術。 、^0CVD裝置的反應腔S所有氣體混合及發生反應的地方，腔體 通米是由不細或是石英所製成，腔體的内壁通常具有由石英或「曰 With the difference in deposition techniques and deposition parameters, the structure of the deposited film may be “single crystal”, “polycrystalline”, or “non-crystalline” structure. The deposition of a single crystal film is called "epitaxy" in the special circuit of the integrated circuit. Compared with the wafer substrate, the advantages of the semiconductor film grown by stupid crystal are as follows: the donor or the acceptor can be directly pushed during the deposition process, so that the "f-distribution" of the film can be accurately controlled (d〇_profile) ), and does not contain impurities such as oxygen and carbon. Metal organic chemical vapor deposition (Metal_〇rganic Chemical Vap〇r De=ti0n, _ M0 (10)), the principle is to use the carrier gas &machi; to carry the rolling phase reactant, or the precursor into the (four) wafer In the cavity, the susceptor under the wafer heats the wafer and the gas close to the wafer in a specific way. = The high temperature triggers the single- or the number of Wei- _ chemical reaction, and the reactants are A thin film deposition technique that converts solid state products onto the surface of the wafer. Where the gas in the reaction chamber S of the ^0CVD device is mixed and reacted, the cavity is made of quartz or quartz, and the inner wall of the cavity usually has quartz or "
L 201222709 是高溫陶瓷所構成的内襯。在腔體中會有一個承載盤用來承載基 板或是晶圓，這個承載盤必須能夠有效率地吸收從加熱器所提& 的能量而達到薄膜成長時所需要的溫度，且不能與反應氣體發^ 反應j所以多半是由石墨所製成。加熱模組通常設置於承载盤下 方，其種類有紅外線加熱模組、熱阻加熱模組與微波加熱模組等。 驅動模組通常設置於加熱模組下方，以帶動承載盤旋轉。 反應腔體表面通常有許多可以讓冷卻水流通的通道，可以讓 =卻水來避免腔體本身在薄膜成長時發生過熱的狀況。一般來 說’為了保護操作人員安全，對冷卻程度的要求是人體觸摸反應 鲁腔體外側表面不能夠燙傷，因此，反應腔體的壁面、頂蓋、甚至 底部都有設置冷卻水通道。 然而’-般MOCVD裝置並沒有特別針對加熱模組或驅動模组 設置冷卻模組，因此對驅動模組的保護性不佳；當加熱模組需要 降溫時’降溫效率緩慢。有鑑於此’亟需提出具有新的冷卻&組 的化學氣相沈積裝置’以針對加熱模組且/或驅動模組設置提供A 卻功能。 7 【發明内容】 本發明之一目的係提供一種薄膜沈積裝置，包括：一反應胪. 位於反應腔内之-晶圓載具，晶圓載具用以承載至少一晶圓Ί 中士’晶圓載具包括-實質上封閉之轉動殼；一加熱模組，位於^ 動设内，用以加熱晶圓；一驅動模组，位於轉動殼 驅動轉動殼旋轉；以及-冷卻频，位於轉動殼内，並於加^ 組與驅動之間’其中’冷卻模組於操作時係使得加熱模組至 驅動模組之間的溫度分佈為不連續溫度分佈。 、 ，發明之另-目的係提供-種用於一薄膜沉積裝置之冷卻模 組，薄膜沉積裝置包含-反應肋及位於反應糊之—基材載、 具、一加熱模組以及一驅動模組，加熱模組用以加埶基材載呈上 之基材’㈣模_轉祕材載具_，冷賴組餘於^熱[ 201222709 模組以及驅動模组之間’其中 組至驅動模組之間的溫度分佈為不連續溫度=時係使得加熱模 ^使#審查委員能進—步瞭解本發明之結構 關式及較佳具體實施例之詳細說明如^。 』L 201222709 is the inner lining of high temperature ceramics. There is a carrier disk in the cavity for carrying the substrate or the wafer. The carrier must be able to efficiently absorb the energy extracted from the heater to reach the temperature required for the film to grow, and cannot react with the reaction. The gas reacts with the reaction j, so most of it is made of graphite. The heating module is usually disposed under the carrier tray, and the types thereof include an infrared heating module, a thermal resistance heating module, and a microwave heating module. The driving module is usually disposed under the heating module to drive the carrier to rotate. The surface of the reaction chamber usually has a number of channels through which the cooling water can flow, so that water can be used to avoid overheating of the cavity itself as the film grows. Generally speaking, in order to protect the safety of the operator, the requirement for the degree of cooling is that the human body touches the reaction. The outer surface of the cavity cannot be burnt. Therefore, the wall surface, the top cover and even the bottom of the reaction chamber are provided with cooling water passages. However, the MOCVD device does not specifically provide a cooling module for the heating module or the driving module, so the protection of the driving module is not good; when the heating module needs to be cooled, the cooling efficiency is slow. In view of this, it is urgent to propose a chemical vapor deposition apparatus having a new cooling & group to provide an A function for the heating module and/or the driving module setting. 7 SUMMARY OF THE INVENTION One object of the present invention is to provide a thin film deposition apparatus comprising: a reaction cartridge. A wafer carrier for carrying at least one wafer in a reaction chamber, a sergeant' wafer carrier The invention comprises: a substantially closed rotating shell; a heating module located in the movable device for heating the wafer; a driving module located at the rotating shell to drive the rotating shell to rotate; and - a cooling frequency, located in the rotating shell, and Between the group and the drive, the 'cooling module' is operated such that the temperature distribution between the heating module and the driving module is a discontinuous temperature distribution. Further, the invention provides a cooling module for a thin film deposition apparatus, the thin film deposition apparatus comprising a reaction rib and a substrate carrier, a heating module, a heating module and a driving module The heating module is used to reinforce the substrate on which the substrate is placed. (4) Mode _ Transfer to the secret material carrier _, the cold 组 group is in the heat [201222709 module and the drive module Between the group and the drive mode The temperature distribution between the groups is the discontinuous temperature = the time so that the heating module enables the review committee to further understand the structural closure of the present invention and the detailed description of the preferred embodiment. 』
【貫施方式】 D — 10，承载㈣上具有至少―晶圓11，承健盤[Comprehensive mode] D-10, bearing (4) has at least "wafer 11,"
供反t職行化秋射所需要之溫度，加i =之下方則具有_絕熱模組13,以隔絕高溫輻射至： r如ί傳動^组（未顯示於圖中），因為高溫輕射容易導致傳^ /皿度上升時間，熱防護性不佳。 另方面，轉動軸的設計有無法避免之缺點 當承載盤H)安驗轉練14，7傾射心產生些微誤差H =誤差將獻於承賴巾叫值。尤絲—麵直徑越大以 例如:承載盤的半徑為r，傾斜角度為Θ，末端 響3如此一來’於轉動時將會影響沈積薄膜的均 σ回 不’纟明之第—貫施例揭露-種薄膜沈積裝置， 例如：化學氣相沈積裝置’具有一反應腔2〇、一晶圓載具21、一 加熱模組22、一驅動模組23以及一冷卻模組24。 八 。其中一，晶圓載具21係位於反應腔20内，用以承載至少一晶 圓（圖未不）’其中’晶圓載具20包括-實質上封閉之轉動殼212。 加熱模組22係位於轉動殼212内，用以加熱晶圓。其中，加 熱模組22係為紅外線加熱模組、熱阻加熱模組或是微波加熱模組。 請參考圖3所不，驅動模組23係位於轉動殼212的底部，用 以驅動轉動殼212旋轉。此外，驅動模組23進一步包含：一從動^ 201222709 内齒輪232 ;至少一主動外齒輪234 ;以及一第一馬達2邪。其中， 轉動殼212係架設於從動内齒輪232上；至少一主動外齒輪234 係用以嗜合及驅動從動内齒輪232;而第一馬達236係用以: 少一主動外齒輪234。 “請再參照圖2，冷卻模組24係位於轉動殼212内’且位於加 ，杈組2*2與驅動模組2〇之間，其中，冷卻模組24於操作時係使 得加熱模組22至驅動模組23之間的溫度分佈為不連續溫度分 佈。於本發明之一範例中，不連續溫度分佈指的是冷卻模組 近兩側空間之溫度差異值非常明顯，例如：大於或等於1⑻。c . 難者，大於或等於 ΐ。於本㈣之另—範财、，冷卻模也 於域時係使得旋轉殼内之溫度分佈為不連續溫度分佈。 於|發明之又—範例中，冷卻模組24之截面積可以占旋轉殼 2之截面積的30%以上，較佳者為5⑽以上。 相2 ’於本發明之再—範财，冷賴組24係為-可 :周整=之冷卻模組务步包含：一冷卻主體241 ;複數個支撐 早疋243,以及至少-個高度調整單元245。其中，冷體 2418 ； 243，, 主^卩主體241，且支撐早凡243内部設置管路243a與冷卻 體241&連通’以便於冷媒進出冷卻主_，上述 之冷媒可以為水或空氣。 ^ 上述高度調整單S 245係與支撐單元如配合，可根 撐私243之高度，藉此調整冷卻模組24於加熱模组22 與驅動模組23之間的相對距離。 、 上述高度調整單元245可以包含至彡 之鎖固元件245b，例如但不限於螺帽。1衣働與其對應 =晶反應進行前，使时可藉由手動 至適當向度，再將鎖固元件245b迫緊〇 文牙，心43 245a向左右兩邊膨脹，進而對支撐單二a，以、使〇型環 丁又存早το 243及側壁氣密，以達鎖f 201222709 固之效果。然而，於磊晶反應進行當時則無法調整支撐單元2奶 之高度。 本實施例之冷卻模組24不直接接觸驅動模組23等元件，可 以有效隔絕熱轄射，因此，確實較習知之化學氣相沈積裝置呈 進步性。 此外，本實施例之化學氣相沈積裝置可以更包含一絕熱模組 25，其係置於加熱模組22及冷卻模組24間，以增加絕熱效果\ 請參照圖4，其繪示本案之第二實施例之冷卻模組私之細部 結構示意圖。如圖所示，本發明之高度調整單元桃可為一伸^ • 式蛇管，其具有大壓縮量及封真空的特性。 、 此外，本實施例之化學氣相沈積裝置進一步具有：一微控制 器48，一第二馬達49 ; 一第一溫度偵測器46 ;以及一第二 測器47。 貝 中，Μ控制器48具有一儲値表（L〇〇kup Table)，可經由儲 値表，據一目標加熱溫度而得到一第一高度控制訊號。 β、第二馬達49 ’耦接至微控制器48，可接收第一高度控制訊號 I，或拉長伸‘式蛇管445,以調整冷卻模組44到達預定高度。 第溫度偵測器46係設置於加熱模組42及冷卻模組之間 =電性轉接至微控制器48，以產生_第—溫度峨。其中，微控 =48會監控第一溫度訊號是否位於正常細，當第一溫度訊號 =正常範圍時’微控制器48將產生—第二高度控制訊號，第二 、:49接收第二尚度控制訊號時，會壓縮或拉長伸縮式蛇管 5，以調整冷卻模組44到達預定高度。 第二溫度偵測器47係設置於冷卻模組44及驅賴组43之間 =耦接至微控湘48，以產生—第二溫度訊號。其中，微控 =會監控第二溫度訊號是否位於正常翻，當第二溫度訊號 遠^’微控制器48會產生—第三高度控制訊號，第二馬 弟二咼度控制訊號而壓縮或拉長伸縮式蛇管445，以調整冷[ 201222709 卻模組44到達預定高度。 舰蟲晶程序的預定操作溫度偏高（例如麵。«， 男J微控制器48控制第二馬達49愿粮# ) 44高度遠離加敎模⑽式蛇官445，使冷卻模組 处、—石θ (也尤疋接近驅動模組43)，以避免耗鲁 Γ48’^Γ第曰曰程ί遠的作溫度偏低（例如500 °c)，則_ 靠近加達若::;二 使糊^ . 弟一度偵测器47所感測之溫度過埶，表 驅動杈組43有異常狀況，本發日月 ^^ f縮伸縮式蛇管4㈣咖近驅動模組 低）以决速冷卻驅動模組43，避免燒毁。 444本ίΓ之化魏她齡置可視^而_雕支撐單元 之间度，以即時冷卻加熱模組42或驅 隔絕熱輕射，因此，可改善習知化學氣相沈積裝置之缺^ έ ^發明之第三實施例揭露一種用於薄膜沉卻模 ^ίΪ沉積裝置例如但不限於為—化學4相沉積裝置，呈包含 動板組，加熱权組用以加熱基材載具上之基材，例如 -晶圓’驅動模_轉動基材載具 ^ 模組以及驅動模组之間，其中，Α :賴、、且係位於加熱 叙至驅動模組之間的溫度分佈“連時加熱模 -r^it ^ 佈為不連續溫度分佈。於本發明之另一範例中，不; g冷部模組的鄰近兩側空間之溫度差異值可以大於或等ς:佈 描述所述之冷卻模組之結構變化已經於第—實施例中 本案所揭示者，乃較佳實施例，舉凡局部 偷 於本案之技術思想而為熟習項技藝之人所易於推知者== 8 201222709 案之專利權範疇。 综上所陳，本案無論就目的、 於習知爾特徵，且其首先發明心實:效亦==其週異 社會，實感敏。 +日舒糊’俾嘉惠 【圖式簡單說明】 圖1A為一般化學氣相沈積裝置之示意圖。 圖。圖1B為-般化學氣相沈積裝置之承載盤末端偏斜誤差示音 圖2係根據本發明第一實施例之化學 構剖面示意圖。 ^相沈射置之細部結 圖3係根據本發明第一實施例之驅動模組之剖面示意圖。 圖4係根摅太恭昍筮二f施例之各媒名m ~ ° 構剖面示意圖。 【主要元件符號說明】 10承載盤 11晶圓 12加熱器 13絕熱模組 14轉動轴 20反應腔 21晶圓載具 212轉動殼 22加熱模組 23驅動模組 232從動内齒輪 236第一馬達 234主動外齒輪 241冷卻主體 24冷卻模組 243支撐單元 241a槽體 245高度調整單元 243a管路 245b鎖固元件 245a 0型環 25絕熱模組 42加熱模組 43驅動模組 44冷卻模組 445高度調整單元 201222709 46第一溫度偵測器 48微控制器 47第二溫度偵測器 49第二馬達For the temperature required for anti-t occupational autumn shooting, plus i = below there is _ adiabatic module 13 to isolate high temperature radiation to: r such as ί drive ^ group (not shown in the figure), because of high temperature and light shot It is easy to cause the transfer time of the ^ / dish degree, and the thermal protection is not good. On the other hand, the design of the rotating shaft has unavoidable shortcomings. When the carrier disk H) is tested and the 14,7 tilting heart produces a slight error H = the error will be given to the value of the towel. The larger the diameter of the 尤斯—the surface is, for example, the radius of the carrier disk is r, the angle of inclination is Θ, and the end is 3, so that the rotation will affect the σ of the deposited film. A thin film deposition apparatus, such as a chemical vapor deposition apparatus, has a reaction chamber 2, a wafer carrier 21, a heating module 22, a driving module 23, and a cooling module 24. Eight . In one of the embodiments, the wafer carrier 21 is located in the reaction chamber 20 for carrying at least one crystal (not shown). The wafer carrier 20 includes a substantially closed rotating shell 212. The heating module 22 is located in the rotating casing 212 for heating the wafer. The heating module 22 is an infrared heating module, a thermal resistance heating module or a microwave heating module. Referring to FIG. 3, the drive module 23 is located at the bottom of the rotating housing 212 for driving the rotating housing 212 to rotate. In addition, the driving module 23 further includes: a driven ^ 201222709 internal gear 232; at least one active external gear 234; and a first motor. The rotating housing 212 is mounted on the driven internal gear 232; at least one of the driving external gears 234 is used to engage and drive the driven internal gear 232; and the first motor 236 is used to: one less the external external gear 234. "Please refer to FIG. 2 again, the cooling module 24 is located in the rotating shell 212" and is located between the adding group 2*2 and the driving module 2〇, wherein the cooling module 24 is used to make the heating module The temperature distribution between 22 and the drive module 23 is a discontinuous temperature distribution. In one example of the present invention, the discontinuous temperature distribution means that the temperature difference between the two sides of the cooling module is very significant, for example: greater than or Equivalent to 1 (8). c. Difficult, greater than or equal to ΐ. In this (four) another - Fancai, the cooling mode is also in the domain when the temperature distribution in the rotating shell is a discontinuous temperature distribution. The cross-sectional area of the cooling module 24 may be more than 30% of the cross-sectional area of the rotating shell 2, preferably 5 (10) or more. Phase 2 'in the present invention - Fancai, the cold Lai group 24 is - can: The cooling module step comprises: a cooling body 241; a plurality of supporting early 243, and at least one height adjusting unit 245. wherein, the cold body 2418; 243, the main body 241, and the support is early Wherein 243 internal arrangement line 243a is connected to the cooling body 241 & to facilitate the ingress and egress of refrigerant Cooling main _, the above-mentioned refrigerant may be water or air. ^ The height adjustment single S 245 is matched with the supporting unit, and can support the height of 243, thereby adjusting the cooling module 24 to the heating module 22 and the driving mode. The relative distance between the groups 23. The height adjusting unit 245 may include a locking element 245b to the crucible, such as but not limited to a nut. 1 clothing and its corresponding = crystal reaction before the time can be made by manual to appropriate In the degree of orientation, the locking element 245b is forced to the ridge, and the heart 43 245a is expanded to the left and right sides, thereby supporting the single two a, so that the 〇-shaped ring is stored το 243 and the side wall is airtight to lock f 201222709 The effect is solid. However, the height of the support unit 2 can not be adjusted at the time of the epitaxial reaction. The cooling module 24 of the present embodiment does not directly contact the components such as the driving module 23, and can effectively isolate the thermal radiation, so The chemical vapor deposition apparatus of the present embodiment is further improved. Further, the chemical vapor deposition apparatus of the embodiment further includes an insulation module 25 disposed between the heating module 22 and the cooling module 24 to Increase insulation Please refer to Fig. 4, which is a schematic view showing the structure of the private module of the second embodiment of the present invention. As shown in the figure, the height adjusting unit of the present invention can be a flexible coil having a large compression. The chemical vapor deposition apparatus of the present embodiment further has a microcontroller 48, a second motor 49, a first temperature detector 46, and a second detector 47. In the middle, the controller 48 has a storage table (L〇〇kup Table), which can obtain a first height control signal according to a target heating temperature via the storage table. β, the second motor 49' is coupled To the microcontroller 48, a first height control signal I, or a stretched-type coil 445 can be received to adjust the cooling module 44 to a predetermined height. The temperature detector 46 is disposed between the heating module 42 and the cooling module = electrically coupled to the microcontroller 48 to generate a _th temperature 峨. Among them, the micro control=48 will monitor whether the first temperature signal is in normal fineness, when the first temperature signal=normal range, the microcontroller 48 will generate the second height control signal, and the second: 49 will receive the second degree. When the signal is controlled, the telescopic coil 5 is compressed or elongated to adjust the cooling module 44 to a predetermined height. The second temperature detector 47 is disposed between the cooling module 44 and the drive group 43 and coupled to the micro control unit 48 to generate a second temperature signal. Wherein, the micro control=will monitor whether the second temperature signal is in the normal turn, when the second temperature signal is farther than the 'micro controller 48 will generate the third height control signal, and the second horse second control signal is compressed or pulled Long retractable coil 445 to adjust the cold [201222709 but module 44 reaches the predetermined height. The predetermined operating temperature of the ship worm program is high (for example, face. «, male J microcontroller 48 controls the second motor 49 will grain #) 44 height away from the twisting die (10) type snake officer 445, so that the cooling module, Stone θ (also close to the drive module 43), in order to avoid the low temperature (for example, 500 °c), the _ close to the Garda::; Paste ^. The temperature sensed by the younger detector 47 is too high, the table drive 杈 group 43 has abnormal conditions, the hair of the day and the moon ^ ^ f shrink telescopic snake 4 (four) coffee near drive module low) to speed the cooling drive mode Group 43, to avoid burning. 444 Γ 化 魏 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她A third embodiment of the invention discloses a deposition device for a thin film deposition, such as but not limited to, a chemical 4-phase deposition device, comprising a movable plate group, and a heating right group for heating a substrate on a substrate carrier For example, the wafer 'drive mode _ rotating substrate carrier ^ module and the drive module, wherein Α: 赖, and is located between the heating and the drive module between the temperature distribution "continuous heating mode -r^it ^ The cloth is a discontinuous temperature distribution. In another example of the present invention, the temperature difference value of the space on the adjacent sides of the g cold part module may be greater than or equal to: the cloth describes the cooling mode The structural changes of the group have been disclosed in the present invention in the first embodiment, which is a preferred embodiment, and it is easy for a person who is a part of the skill of the present invention to steal the technical idea of the present invention == 8 201222709 In summary, this case, regardless of purpose, familiarity Characteristics, and first invented the heart: effect also == its different society, real sense of sensitivity. + 日舒糊'俾嘉惠 [schematic description] Figure 1A is a schematic diagram of a general chemical vapor deposition device. 1B is a schematic diagram of the deflection of the end of the carrier disk of the general chemical vapor deposition apparatus. FIG. 2 is a schematic cross-sectional view of the chemical structure according to the first embodiment of the present invention. Figure 4 is a schematic cross-sectional view of the drive module of the embodiment of the present invention. Figure 4 is a cross-sectional view of the media name m ~ ° of the embodiment of the 摅 摅 昍筮 。 。 f 。 。 。 。 。 。 10 10 10 10 10 10 10 10 10 10 10 Insulation module 14 rotating shaft 20 reaction chamber 21 wafer carrier 212 rotating shell 22 heating module 23 driving module 232 driven internal gear 236 first motor 234 active external gear 241 cooling body 24 cooling module 243 supporting unit 241a tank 245 height adjustment unit 243a line 245b locking element 245a 0 type ring 25 insulation module 42 heating module 43 drive module 44 cooling module 445 height adjustment unit 201222709 46 first temperature detector 48 microcontroller 47 second temperature Measuring a second motor 49