TW201219793A - with the same micro-electromechanical process to fabricate vertical chip writing probe base and its probe card - Google Patents

Abstract

The present invention provides a vertical chip writing probe base, which comprises: a substrate; a writing probe card having a body and at least one series of micro probe; and, a fixation base. During assembly, the writing probe card may first be configured in the fixation base, and then the fixation base may be mounted on the substrate holes using fasteners. Furthermore, the present invention also discloses a fabrication method for vertical chip writing probe card, which employs a micro-electromechanical process in association with micro-electroforming technology to fabricate the vertical chip writing probe base and its probe card within the same micro-electromechanical process.

Description

201219793 VI. Description of the Invention: [Technical Field] The present invention relates to a vertical type wafer burning probe holder and a probe card=method thereof, in particular, a (10) microelectromechanical process combined with micro electroforming technology, In the micro-private privately, several micro-probes with the same shape are fixed on a module according to the required pitch, ^ - a micro-machine Wei Cheng towel completes the charm type "ship probe seat and its probe card manufacturing method. Prior Art In the past few years, Taiwan has established a global market for semi-conducting financial and optoelectronic products, # semiconductor, from ic design, reticle, wafer fabrication, packaging, testing, professional division and clustering effects. The advantage of the word, the overall output value in the global share - sit = the ground' However, the whole semiconductor industry in the latter stage of the wafer probe test is often ignored, but its $ essential is indispensable, so far no one The company omits the test of this step, because it is related to the quality and reputation of the company's shipments. However, with the continuous improvement of semiconductor technology, how to reduce the size of the wafer and increase its customer's ability to make the chip function stronger and stronger. Operation and storage functions are the main goals of future development, but with this trend, pr〇be testing requirements will face ultra fine pitch, area array testing (虹(9) # array testinS), 咼Challenges such as high pin counts, high touchdown, and low cost (i〇w(7) pairs). As far as the project is concerned, the industry's current wafer testing technology is mainly based on epoxy resin technology. The main disadvantage of the pin directly connected to the printed circuit board is that it cannot meet the requirements of small pitch and high-frequency electronic components, and it cannot be mass-produced to reduce costs. Therefore, the current traditional testing technology will require wafer size reduction and high-frequency testing. Producing bottlenecks in production. Micro-electro-mechanical system technology (MEMS) micro-probes are available because they are light, thin, short, small, inexpensive, and mass-produced. To meet the future high enthusiasm, high density, high number of 'high frequency wide and system 201219793 system on chip test requirements.

The development of MEMS technology has been going on for a long time, and many research results have been presented and widely used in micro-scan mirror arrays (please refer to p. F. Van Kessel, LJ Hornbeck, RE Meier, and MR Douglass, “ A MEMS-Based Projection Display,,,,,,,,,,,,,,,,,,,, Patra, OMM Inc, "Digital MEMS For Optical Switching," IEEE Communications Magazine, Vol. 40, 2002, pp. 88-95), Light Decay_Subtractor (please refer to C. Chen, C. Lee, and YJ, respectively) Lai, "Novel VOA Using In-Plane Reflective Micromirror And Off-Axis Light Attenuation, IEEE Communications Magazine, Vol. 41, 2003, pp. SI 6 - S20 ' RRA Syms, H. Zou, J. Stagg, and DF Moore, uMultistance Latching MEMS Variable Optical Attenuator," IEEE Photonics Technology Letters, Vol. 16, 2004, pp. 191-193, TS Lim, CH Ji, CH Oh, Y. Yee, and JU Bu, "Electrostatic MEMS Va Riable Optical Attenuator With Folded Micromirror, 5, MEMSO3, Kyoto, Japan, • August 2003, pp. 143 - 144. ' M. Wu, C. Yang, X. Mao, X. Zhao, and B. Cai, “Novel MEMS Variable Optical Attenuator," Chinese Optical Letters, Vol. 1, 2003, pp. 139-141. 'CH Ji, Y. Yee, J. Choi, and JU Bu, "Electromagentic Variable Optical Attenuator, 5, MEMSO3, Kyoto, Japan , August 2003, pp. 49-50. and BM Andersen, S. Fairchild, and N. Thorsten, "MEMS Variable Optical Attenuator for DWDM Optical Amplifiers," Optical Fiber Communication Conference, Baltimore, Maryland, Vol. 2, March 1999, Pp. 260-262.), RF, switch (please refer to M. Ozgur and M. Zaghlout, tsRF MEMS Components Using CMOS 201219793, respectively)

Technology, ^ Antennas and Propagation Society International Symposium, Boston, Vol. 3, July 2001, pp. 678 - 681. and Y. S. Hijazi, D. Hanna, D. Fairweather, YA Vlasov, and GL Larkins, "Fabrication Of A Superconducting MEM Shunt Switch For RF Applications, 5, IEEE Transactoins On Applied

Superconductivity, Vol. 13, 2003, pp. 700-702.) and microsensors (please refer to B. Okcan, and T. Akin, "A thermal Conductivity Based Humidity Sensor In A Standard CMOS Process, MEMSO4, Maastricht, The Netherlands, January 2004, pp. 552-555. )° φ Therefore, 'the development of MEMS technology has more R&D fields and application potential than IC components'. Especially MEMS includes not only electronic circuit systems. Design, also involves the principle and application of mechanical actuators and sensors, is a high degree of system integration technology. On the other hand, in terms of process conditions and component characteristics, micro-electromechanical technology can be used to make three-dimensional structures, high and deep Ratio, suspension microstructure and multi-component 2 (: The spring probe is mainly used in the burning equipment, but the spring-type contact probe can not resist the horizontal vibration interference, and it is easy to be tilted by the lateral force, causing the burnt recording Unstable. The spring contact probe will eventually become fatigued and cause instability when the IC is burned. However, the life of the spring probe is about 5G~6 million times. The method of the probe includes: _ is electrically connected to a measurement system, for example, 'the method of the vertical probe and 4 and the method of joining the same is disclosed in the 'Republic of China Bulletin No. 131' patent. And manufacturing and joining: a contact body with two tips; a connecting body,

Lie reveals a kind of probe module, (2) a mouthpiece 1 Sichuan Wui No. | probe module" which mainly includes a carrier, a plurality of metal probes 201219793

And a plurality of reinforcing materials. The carrier has at least one probe carrying area and at least one reinforcing material carrying area, and the probe carrying area is adjacent to the reinforcing material carrying area, wherein a plurality of fixing portions of the metal probes are coated and fixed on the The probe carrying area of the carrier supports the metal probes, and the carrier exposes a plurality of detecting ends of the metal probes, and the reinforcing materials are disposed on the reinforcing material carrying area of the carrier Increasing the strength of the carrier and allowing the metal probes of the probe module to perform an average force on the metal probes during the test, which can prevent the metal probes from generating the needle position offset Or the detection ends of the metal probes are not in the same horizontal plane. The probe of the above patent has a carrier and a plurality of metal probes, the end of the metal probe is oblique, the body of the metal probe is in an upright shape, and the end of the metal probe is oblique and the wafer The contact pad is easy to slide when it comes into contact, which is a drawback. SUMMARY OF THE INVENTION One object of the present invention is to provide a vertical type wafer burning probe holder and a probe thereof, which are micro-electromechanical process combined with micro-electro-wei, and the micro-electromechanical 13⁄4 has the same shape. The probe is fixed on a module according to the required pitch, and the electromechanical hiding is completed, and then the vertical displacement type of the probe holder and the probe probe are provided for the system of the special needle card. Depth, minimum lateral offset t δ~Da Temple f·sheng-species conditions, using the voice coil motor load for the purpose of the description, the vertical type of tablet burning probe holder of the present invention, one burning The recording probe is placed in the middle; the second probe 'the micro-probe is in a vertical manner.», a丄i eight ends are exposed from the body, and in addition, the body is at least running for life. And the goal is to reach -, can. -p and the probe is burned and transmitted without deterioration of quality: including at least one pinhole and at least a card having a body and at least one 虼 ί 木 ' 侧 ” ” ” ” ” ” ” ” The device has a receiving device for accommodating the device, and at least one side of the accommodating space has a seat hole corresponding to the hole of the plate, and the two sides are fixed, and the side has a gap, the gap The two sides are respectively extended outward to form two wings _^ and the mother-wing is strong when the age is m, the lining probe card can be first placed in the fixing seat, and then the first lock is exposed through the two joints. The pinhole is locked by a second fastener through the hole of the plate J. For the purpose of the description, the vertical type wafer burning probe card of the present invention includes the following steps: first coating on the wafer 7g - seed layer, missing = rotating cloth - first - (d) Photoresist (KMpR) layer, and exposure (step 1); post-exposure post-baking (step 2); after the completion of the exposure, the development of the re-r ancient, the age of the end of the new re-run (township 3) After the completion of the series, ^ the first negative-type photoresist layer of the household, the slit and then the cloth - the second negative photoresist (su-8) i the second mask to expose the second negative light Unwanted light on the resist layer = shirt removal (step 4); and the secret engraving machine removes the seed layer to obtain the burn-in probe card on the 3th day of the day (step 5). A detailed description of the structure, features, and aspects of the present invention, as well as the preferred embodiments, will be further described. /, [Embodiment] Straight type: sheet and 5 2 'where FIG. 1 1 shows a schematic diagram of the vertical hanging of the preferred embodiment of the present invention; FIG. 2 shows the case, the preferred embodiment is a vertical type aa piece}^ A schematic diagram of the combination of the probe holders. The present invention - a vertical type wafer burning probe holder of the preferred embodiment, and a probe card 20; and a mounting base 30, wherein the substrate 10 is, for example but not limited to, a printed circuit board Ct1 and at least - plate hole 12. The number of the pinholes 11 is fixed, and the number of the plate holes 2 is, for example but not limited to, two. The burn-in probe card 20 has a body 21 and at least one micro-probe, and the micro-201219793 probe 22 is placed in a vertical manner on the body body 2, and the body 21 is t-shaped, the body 21 It is made of insulating material 2: it has 1 perforation 23. In the present embodiment, the micro ride 22 is a red s and then u is from the system 4, but is not limited thereto. The J Λ 'Γ burning probe card 20 further has an isolation seat 24, and the number of the pin holes 25 corresponding to the body 21 is corresponding to the number of the pin holes 25 of the body 21; 25' = accommodating = having a accommodating space 31 for accommodating the burning probe card 20, which is 34^35 34. The #- the first locking member 40 and the second locking member are not in contact with the ic or the ball of one end of the microprobe 22 (Fig. = work: this? The other end of the microprobe 22 is connected to the burning The recorder port (not shown), so that the pre-burning operation can be performed. [S] Please - and refer to Figure 3 and Figure 4, wherein Figure 3 shows another better solid crystal in the case> A schematic diagram of a process for fabricating a card; a schematic diagram showing the fabrication of a vertical wafer burning probe card of a preferred embodiment. ^ 〇201219793 wafer burning probe card manufacturing method, including negative Type photoresist a) layer 'and exposure (step 1); after exposure H t (step 2); after the post-exposure bake is completed, the development is completed after the electroforming (step 3); after electroforming, Remove the second = second warm ΐ: then rotate a second negative photoresist (su-8) layer, and then use a (+4) light. Do not rely on the photoresist on the second 贞-type photoresist layer. The development is removed to the ^ _ ^ = machine lai fresh layer wire, the _ wafer wafer 70 is coated with a sub-layer, and then the thickness of the photoresist layer is two; =: line exposure; where 'the first-negative type Fang, 4 are not obvious The wafer 70 has a plurality of probes 20' through the above-mentioned pens, and each of the burn-in probe cards 20 has a plurality of micro-S-shaped bends and then one end of the probe 22 is exposed to the body 21, and another One end is the method, === wafer burning probe holder and its probe card are made by the thief, and the miniatures are: ^, the replacement micro-probe holder; and the system is different. The external penalty of flexible telescope is tested for repeatability and stability, and the fatigue transmission life of the flexible probe is measured by the three kinds of signal transmission characteristics: This technique ^^ΐ和=佳实&example' is a partial change or modification and the source code technology is easy to infer from the skill of the person who knows the skill, and does not deviate from 201219793. . Regardless of the purpose, means and efficacy of Yu Xia, the case is showing its strangeness and obscuring the patent, the patent element of Qi Jiahui, and the invention of the money is practical, and it is also in the pursuit of the invention. I urge you to review the euphemistic society and feel really good. [Simple description of the diagram] Recording = Figure _ Case - Compared to __ straight wafer burning

Recording (10) (4) Straight wafer firing 2 趟 ^ Recording of the case - the vertical wafer burning of the preferred embodiment [main TL symbol description] substrate 10 plate hole 12 body 21 perforation 23 pinhole 11 burning probe Card 20 Microprobe 22 Isolation seat 24 Pin 26 Housing space 31 Notch 33 Wing hole 341 Wing hole 351 Screw 41 Second lock 50 Nut 52 Pin hole 25 Fixing seat 30 Seat hole 32 Flap 34 Wing 35 First Locking nut 4 〇 nut 42 screw 51 wafer 70 201219793 Step 1: first deposit a sub-layer on a wafer, then spin a resistance (KMPR) layer, and expose; keeper ^ light step 2: after the exposure is completed After the exposure and baking, after the casting is completed, the development of the first-negative photoresist layer is completed. After the development is completed, step 4: after the electroforming is completed, all the second negative photoresists are removed (SU-8). Layer, then make the second one, and then rotate the negative light _ the light that is not needed - first cover the 仃 exposure, the second step (four) use the etching machine to remove 1 hai;

Probe card. Λ layer removal' can be obtained on the wafer

Claims (1)

201219793 VII. Patent Application Range: 1. A vertical type wafer burning probe holder, comprising: a substrate having at least one pinhole and at least one plate hole; the micro body 'this one burning probe card , having a body and at least one string of micro-probes, the probe is placed in the body in a vertical manner, and both ends thereof are exposed to the outside, the body has a perforation on at least one side thereof; and * a fixed The seat has a accommodating space for accommodating the burning probe card, and at least one side of the receiving station has a hole corresponding to the hole of the plate, and one side of the fixing seat The utility model has a notch, the two sides of the notch extending outwardly to form two fins and having a wing hole thereon; and when the combination is in combination, the burning probe card can be first placed in the fixing seat, and then After the first lock fastener passes through the two wing holes, the micro-probe is exposed to the pinhole and is locked by a second fastener respectively passing through the plate hole and the seat hole. 2. The vertical wafer burning probe holder of claim 1, wherein the substrate is a printed circuit board. The vertical type wafer burning probe holder according to claim 1, wherein the body of the burning probe card and the fixing base are made of an insulating material. 4. For the towel, please use the vertical type (9) burning probe base described in the item, and the second recording probe card has a spacer, and the spacer corresponds to the body. The perforation has at least a pin hole, and the 俾# can be placed through the perforation and pin hole to be combined with another burning probe card. 5. The vertical wafer burning probe holder according to the invention of claim 2, wherein the burning probe card has a plurality of micro-probes, and one of the riding-micro-probes is bent in an S shape. Straighten out. 6. The vertical wafer burning probe holder of claim 1, wherein the first locking member and the second locking member respectively comprise a screw and a nut. 7. A method for fabricating a vertical wafer burning probe card, comprising the steps of: first depositing a sublayer on a wafer, and then rotating a first negative photoresist [S1 12 201219793 (KMPR) And exposing the exposure; after the exposure is completed, performing post-exposure baking; after the post-exposure baking is completed, developing the first negative-type photoresist layer, and performing electroforming after the development is completed; after the electroforming is completed, removing all of the a first negative photoresist layer, and then a second negative photoresist (SU-8) layer is rotated, and then a second photomask is used for exposure to develop an unnecessary photoresist on the second negative photoresist layer. Remove; and, the needle card uses the side of the miscellaneous layer of silk 'can be used to make the burn 8. The thickness of the photoresist layer as described in claim 7 is 90_. The first negative type is further composed of a plurality of micro-facets as described in claim 7 of the patent application.探针 Recording probe card