201219612 六、發明說明： 【發明所屬之技術領域】 本案係關於-制以製條材的電鐘系統及其方法 電鑛物 其，本祕在電鍍翻錢加熱待鍍物，以提升 的結晶性的電鍍系統及其方法。 【先前技術】 到二Ξ電驟包括物擴散 ()电鍍物吸附到待鍍物的表面、（3)電铲物 = 錢物上的表面擴散以及‘物 命二φ❼、，、。日日成長。一般電鍍物係以離子的狀態存在於 j中’而電翁物要擴散到待鍵物的周圍主要有下列兩種 產=度r中所造成的擴散以及_等外= 在電鍍液；的擴====可増加電鍍物 散速率。又使加…忐扣升电鍍物在待鍍物上的表面擴 散二物ί ^缺乏足夠的時間進行表面擴 錢物表面iu上適當層ί散到待 已經沉積於第一電〗#了鍍層原子113就 無法進行進一步的=a，、 上’因此第一電鍍層原子112 緻密性不佳的電#、面擴散’而導致第―圖⑷中結晶性以及 足夠的時間丄;？Γ:11。如果電鍍物在待錢物表面上具有 原子m可於第^擴政’則如第—_)所示，第二電鍍層201219612 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an electric clock system for making a strip and a method thereof. The electric mineral, the secret of which is heated by electroplating to increase the crystallinity. Electroplating systems and methods therefor. [Prior Art] The diffusion of the material includes: (2) the adsorption of the plating material to the surface of the object to be plated, (3) the electric shovel, the surface diffusion on the money object, and the object life φ❼, . Growing up day by day. Generally, the electroplating is present in the state of ions in the state of 'in the ion state, and the electric material is diffused to the periphery of the object to be bonded, and the diffusion caused by the following two kinds of production degrees r and the external plating = the plating solution; ==== can increase the plating rate. Moreover, the surface of the electroplated material is diffused on the surface of the object to be plated. ί ^ Lack of sufficient time for the surface of the surface of the surface of the surface of the material to expand on the iu layer to be deposited on the first electricity layer. 113, it is impossible to carry out further =a, "on the first plating layer atom 112, poor density of electricity #, surface diffusion" resulting in the crystallinity in Fig. (4) and sufficient time 丄; Hey: 11. If the electroplated material has an atom m on the surface of the object to be deposited, the second plating layer may be as shown in the first -_)
S 散完成後才沉積下=鍵層原子122在待鑛物表面121上的擴 積下來’進而產生結晶性以及緻密性良好的電 3 201219612 鍍獏層12。 在現今的半導沪制 般乾材是利用粉東^中’姆的魏是常用的技術。-此類的粉體燒社姑卞了形，再進行高溫燒結而完成。然而， 液化，甚至於“發：同：：熔點較低的元素在燒結的過程中 來製作乾材地’若是藉由金屬轉鑄造的方式 -來，靶材的虑::二广溫加熱而液化或揮發的問題。如此 來製造乾材，控制、然而，若用電鐘的方式 密性不良等卩顿2由於電賴層結晶性不佳以及緻 會蝴過程中，產生局部:ΐ=的缺陷’而這些缺陷 究本:咖 統及其方法」。本案透過直接、’待材的電鑛系 物本身的能量，熱的方式，提升待鍍 所提升，因此電=物有^在待f物表面上的擴散速率有 有較充分的時間擴散到適當的結晶位 Π ^鍍膜層的結晶性與緻密性。 【發明内容】 分早％ ,, ….，. · 一並达原成原子或 ㈣’仍有足角的能量可以繼續擴散，而到達適當的結晶 ^ °因此透過加熱器或是光源照料方式，直接於待&散t 鼓待材的結晶性以及緻密性，本發明透過直接加 寺鍵物的方式，使電鑛物制於待鐘物上孟 位置 本發明之目的係在提升電鍍物於待鍍物上的表面 因此透 鍍物上 施加一熱能 為了達到上述目的，本制提出—種製造姆的電鐘方 201219612 法，該方法包括下列步驟：直接於一待鍍物的上提供一熱能； 以及對邊待錄物的實施_電錢製程。 根據上述構想，該靶材係為一金屬靶或一合金靶。 根據上述構想，該電鍍製程包括下列步騾：提供一電鍍 液、一電極以及一外接電路；將該電極電性連接該外接電^ 以及該待鍍物；以及將該待鍍物浸泡於該電鍍液中。 根據上述構想，該熱能係透過一加熱器、具有一光波長 的一光源或是該加熱器以及該光源的一組合，直接對該待^ Φ 物加熱。。 根據上逑構想，一第一吸收光譜顯示出該電鍍液的一第 一吸收波長，該第一吸收光譜係於具有複數量測波長的一波 長區段中進行制，且鮮量職長扣_第—吸收波長即 為複數可選波長，而該光波長選自該等可選波長。 〃根據上述構想’其中—第二吸收光譜顯示出該待錢物的 一第二吸收波長，而該光波長係選自該第二吸收波長。 為了達到上述目的，本發明另提出用以製作一靶枒的一 春=线’其包括：-電極，用以連結—待賴；以及一能 里長：供裝置，用以直接施加一熱能於該待鍍物。 根據上述構想，該能量提供裝置係為〜加熱器、具 光波長的一光源或是該加熱器以及該光源的一組合。 根據上述構想，該電鑛系統更具有_t鍍^用m巧 該待錢物以進行-電鍍製程；以及—外接電路，與該 接，以提供一電流來進行該電鐘製程。 包^ 【實施方式】 本案所提出之「靶材的電鍍系統及其方法」將可由以下 5 201219612 的實施例說明而得到充分瞭解，使得”本技 據以完成之，然而本案之實施並祚、 ；之人士可以 其實施型態’熟習本技藝之人士仍可依據除二而被限制 精神推演出其他實施例，該等實施例皆當屬於 請參閲第二圖（a)，其係為太众 示意圖。電鍍系統包括作為陰極心加：待鍍物的電鍍系統 U、電鐘電源供應器231、躲t之倾物21、陽極電極 液容器25、作為能量供應褒置的==電=夜Μ、電鍵 以及加熱電源供應器263。呈中兩二二 σ-、态電線262 鍵電線说與待鐘物21以及陽應器231透過電 待錢㈣、陽極電極二===性連接， 而電鑛液24盛裝於電鍵液容二、私鍍液24中， 組成’而複數溶質至少包括一電鑛物。4與複數溶質所 在另一實施例中，若力σ叙σσ 響加熱電源供應器263的供電=殼可導電，且不影 透過電鐘電線232直接盘域源供應$ 231亦可 例中，待_可裝在另-實施 21 261 電鍍電源供應哭,、， 路，提供陽極電梅22及^電鐘錢232係為-外接電 使電鍵物可故躲待额電流，从 (扣4^ 1 +22可二情性電梅，例如冷 叫电極、石墨（c)電 二極’例如麵 液“中的電鍍物會電沉二:鐘广程進行期間’由於電錢 …積於待鍍物21上， 201219612 時間而下降，故可與電鍍期間適度的添 液，使電射、財料魏杨*錄尚的電鐘 Μ度維持在—㈣濃度範圍中。 ，而此：,二’陽極電極22可為—金屬材料的-金屬 包極’而此金料财料機料 屬離子。因此在電鐘二二 受時間的影響而產生變化。讀液24中讀物的濃度較不易 由於加熱器261係賴浦㈣21 加可直接對於待鍍物21進行加熱。在一般的電^力程中: 雖然會使用加熱H來加熱f，但是由 ，，而無法對於待鍵物有良好的加熱效果。此外二身 ;==T物至電嫂液中’對於電錄液本“ ，控U不易’更何況是要轉⑽物穩定的加熱效果。 二的'、二:;，：261直接對待鍍物21加熱，可維持待鍍物 74二會Ϊ思變化’此外雖然會有些熱能逸散到電鍍液 旦加熱裔261係直接控制待鍍物21的溫度，因此 鍍物21的溫度不易受電鑛液24的影響。較佳地，加、 係透過熱傳導的方式提供熱能給待鍍物21，且加熱器、^ = 透過:電能轉換成熱能的方式來達成加熱的效杲。°° 一睛荃閱第二圖(b)，其係為本發明待鍍物照光的 不意圖。其電鍍系統包括作為陰極電極之待鍍物21、=二 極22^。電鍍電源供應器231、電艘電線232、電錢液二= 錢，谷$ 25、作為能量供應t置的光源27。其中電_ =After the completion of the S dispersion, the deposition of the bonding layer atoms 122 on the mineral surface 121 is carried out, which in turn produces a crystallized and densely charged electricity 3 201219612 rhodium-plated layer 12. In today's semi-guided Shanghai-based dry materials, it is a common technique used in the powder of the East. - This type of powder burning society is shaped and then finished by high temperature sintering. However, liquefaction, even "fam: the same:: the lower melting point of the element in the process of sintering to make dry wood" - if it is cast by metal - the target considerations:: two wide temperature heating The problem of liquefaction or volatilization. In this way, dry materials are produced, and control, however, if the density of the electric clock is poor, etc., due to the poor crystallinity of the electric layer and the process of the butterfly, a partial: ΐ = Defects and these deficiencies: the coffee system and its methods. In this case, through the direct, 'electricity of the electric ore system itself, the heat and the way of raising the material to be plated, so that the rate of diffusion of the object on the surface of the object has a sufficient time to spread to the appropriate Crystalline position Π ^ Crystallinity and compactness of the coating layer. [Summary of the Invention] The early %, , ....,. · together with the original atom or (4) 'The energy of the foot angle can continue to spread, and reach the appropriate crystal ^ ° so through the heater or light source care, Directly to the crystallinity and compactness of the material to be treated, the present invention is made by adding the temple bond directly to make the electric mineral in the upper position of the object. The surface on the plate thus exerts a thermal energy on the plated material. In order to achieve the above object, the present invention proposes a method for manufacturing the electric clock of 201219612, which comprises the steps of: providing a thermal energy directly on a plate to be plated; And the implementation of the side to be recorded _ electricity money process. According to the above concept, the target is a metal target or an alloy target. According to the above concept, the electroplating process includes the steps of: providing a plating solution, an electrode, and an external circuit; electrically connecting the electrode to the external device and the object to be plated; and immersing the object to be plated in the plating In the liquid. According to the above concept, the thermal energy is directly heated by a heater, a light source having a wavelength of light, or a combination of the heater and the light source. . According to the above concept, a first absorption spectrum shows a first absorption wavelength of the plating solution, and the first absorption spectrum is performed in a wavelength section having a complex measurement wavelength, and the fresh weight buckle _ The absorption wavelength is a plurality of selectable wavelengths, and the wavelength of the light is selected from the selectable wavelengths. According to the above concept, wherein the second absorption spectrum shows a second absorption wavelength of the object to be purchased, and the wavelength of the light is selected from the second absorption wavelength. In order to achieve the above object, the present invention further provides a spring=line for making a target, which comprises: - an electrode for connecting - waiting; and a length: a device for directly applying a thermal energy to The object to be plated. According to the above concept, the energy providing device is a heater, a light source having a wavelength of light, or a combination of the heater and the light source. According to the above concept, the electric ore system further has a _t plating method for performing the electroplating process, and an external circuit for supplying a current to perform the electric clock process. Package ^ [Embodiment] The "plating system and method of the target" proposed in the present application will be fully understood from the following description of the embodiment of 201219612, so that "this technology is completed, but the implementation of this case is The person who can be in the form of a person who is familiar with the skill can still perform other embodiments according to the restrictions of the two. All of the embodiments belong to the second figure (a), which is too The electroplating system includes as a cathode core plus: electroplating system U to be plated, electric clock power supply 231, dumping object 21, anode electrode liquid container 25, as energy supply device == electricity = night Μ, electric key and heating power supply 263. The two-two sigma-, state-of-the-wire 262 key wire is said to be connected to the object 21 and the positivity device 231 through the electric charge (4), the anode electrode 2 === The electric mineral liquid 24 is contained in the electric liquid volume 2 and the private plating liquid 24, and constitutes 'and the plurality of solute includes at least one electric mineral. In another embodiment where 4 and the complex solute are present, if the force σ σ σ 加热 加热 heating power supply 263 Power supply = the shell is electrically conductive, Not only through the electric clock wire 232 direct disk source supply $ 231 can also be an example, to be _ can be installed in another - implementation 21 261 electroplating power supply cry,,, road, provide anode electric plum 22 and ^ electric bell money 232 series For the external power, the electric button can be used to avoid the current, from the plating of 4^ 1 +22, which can be used for the electric plum, such as the cold electrode, the graphite (c) electric pole, such as the surface liquid. The object will sink 2: during the period of Zhong Guangcheng's due to the electricity money... accumulated on the object 21 to be poured, 201219612 time, so it can be moderately added with the plating period, so that the electric radiation, the material Wei Yang * recorded electricity The clock length is maintained in the - (4) concentration range. However, the second 'anode electrode 22 can be - the metal material - the metal envelope" and the gold material is an ion. Therefore, the electric clock is affected by the second clock. The influence of the time changes. The concentration of the reading material in the reading liquid 24 is not easy to be directly heated by the heater 261, which is directly added to the object to be plated 21. In the general electric force: although the heating H is used Heating f, but by, and can not have a good heating effect on the object to be keyed. In addition, two bodies; == T to In the sputum, 'for the electro-recording liquid book', it is not easy to control the U. What's more, it is necessary to turn the (10) material into a stable heating effect. The second ', two:;,: 261 directly treats the plating material 21 to heat, and can maintain the material to be plated 74 In addition, although there will be some heat energy dissipated to the plating liquid, the heating 261 series directly controls the temperature of the object to be plated 21, so the temperature of the plating material 21 is not easily affected by the electric ore liquid 24. Preferably, The heat is supplied to the object to be plated 21 by means of heat conduction, and the heater, ^ = through: electrical energy is converted into heat energy to achieve the effect of heating. ° ° Read the second picture (b), which is The intention of the present invention to illuminate the object to be plated. The plating system includes a material to be plated 21 as a cathode electrode, and a second electrode 22^. The electroplating power supply 231, the electric ship wire 232, the electric money liquid 2 = money, the valley $25, the light source 27 which is set as the energy supply t. Which electricity _ =
S 應器231透過電錢電線加與待鍵物η以及陽極電=、電 7 201219612 性連接，待鍍物21以及陽極電極22浸泡於電鍍液％中，而 電鍍液24盛裝於電鍍液容器25裡，並由一溶劑與複數溶質 所組成，而複數溶質至少包括一電鍍物。 第二圖(b)與第二圖（a)之間的差異僅在於將加熱器26卜 加熱器電線262、加熱電源供應器263置換成光源27。然而， 待鑛物21係浸泡於電鍍液24 t，就算將光源27設置於電鍛 液24裡’以拉近待錢物21與光源27之間的距離，但對於待 鍵的加熱效果未必會有太多的助益。爲了使光源27可 二有良好的加熱效果’可選擇一特定波長的光波作為光源 2 / 0 逑貫施例中，可先量測魏液％以及魏物^的 ’而分別獲得—第—吸收光譜以及—第二吸收光 二收t譜會顯示出電鍍液24的吸收波峰，該第二 吸收波聲以及待鑛物21的：。由於電鐘液24的 獅的吸收波峰係由 二，波崎^ ,, . _ , 弟一波長的光波所造成。 又土也，為了提高待鍍物21的加埶 物21對於光源27的吸收农， …、放果心即提冋待鍍 波長的光波中進行選擇。二地原】的波長可從至少-第二 不同的吸收率’因此可同的吸收波峰會有 選擇。若需要高吸收率的丄27而求從至少—第二波長中 擇-吸收率最高㈣二^ 7，’可_第二錄光譜中選 較佳地，爲了降低光源^ 乍為光源27的光波長。 意即降低電鍍液24對於光*、；％缝24的加熱效果， 一第一波具卜 '原7的吸收率，光源27可從至少 皮長以外的波長進行選擇。1而言，在量測第—i 201219612 收光譜時，會敎—波長範圍内的波長 ==量測波長扣掉至少一第一波長以後= :數X波長。較佳地，光源27的光波長可從複數 免5二：可降低電舰24對於光源27的吸收效果，以避 免毛鍍液24的溫度過度提升。 較佳，，光源27的光波長可同時參考至少一第一波長以 及至少-第二波長來進行選擇，意即從至少—第二波長^ 選出未與至少-第—波長相同的波長的光絲作為光源 可在提升待鍍物21的加熱效率之同時，亦可降低對於電鑛液 24的加熱效果。 請參閱第三圖，其係為不同基板溫度的電鍛試片的χ_ ^繞射(XRD)圖。曲線3Η系為電鍍液溫度耽和基板溫度為 室溫的XRD ® ’曲、線μ係為電鍍液以及基板溫度皆為耽 的XRD目。其中，作為待鍵物的基板之成分係為麵⑽〇)美 板，M〇的繞料位於40.2。的位置，電鏡物的成分係為二ς 化，銦(CuInSe2，CIS)，CIS的繞射峰依據粉末繞射標準聯合 委員會（Joint Committee on Powder Diffracti〇n standards， 面 JCPDS)的JCPDS卡（JCPDS card)，其主要的繞射峰位於 26.6、44.1、44.2 以及 52.3。，分別代表 CIS 的（112)面、（22〇) 一 （204)面以及（316)面。 將曲線31與曲線32比較來看，曲線32有較為明顯的 CIS(112)繞射峰，意即當基板溫度較高時，電鍍物具有較好 的結晶性，因而有較為明顯的電錢物繞射峰。這是因為較高 的基板溫度，可使電鍍物在基板的表面上有較高的表面擴2 速率，因此有足夠的時間讓各個元素擴散到適當的結晶位 置’而產生大量沿（Π2)面成長的CIS結晶。 9 201219612 相對地，曲線31具有較為明顯的M〇基板繞射峰，而 CIS(112)的繞射峰相對較不明顯，意即基板溫度較低時，電 鍍物不具有良好的結晶性。這是因為較低的基板溫度，會使 電鍍物在基板表面上的表面擴散速率較低，因此各個元素尚 未擴散到適㈣結晶位置時，就有新的電鍵膜層產生而阻礙The S device 231 is connected to the to-be-baked object η and the anode electrode=, the electric battery 7 201219612 through the electric wire, and the object to be plated 21 and the anode electrode 22 are immersed in the plating solution %, and the plating solution 24 is contained in the plating solution container 25 And consisting of a solvent and a plurality of solute, and the plurality of solute comprises at least one electroplating. The only difference between the second figure (b) and the second figure (a) is that the heater 26, the heater wire 262, and the heating power supply 263 are replaced with the light source 27. However, after the mineral 21 system is immersed in the plating solution for 24 t, even if the light source 27 is placed in the electric forging liquid 24 to close the distance between the money object 21 and the light source 27, the heating effect on the key to be pressed may not necessarily be Too much help. In order to make the light source 27 have a good heating effect, 'a specific wavelength of light can be selected as the light source 2 / 0. In the example, the Wei liquid % and the Wei object ^ can be measured first to obtain the first - absorption The spectrum and the second absorption light two-received t-spectrum will show the absorption peak of the plating solution 24, which is the same as that of the mineral 21 to be treated. Because the absorption peak of the lion of the electric bell liquid 24 is caused by the wave of the wavelength of the second wave, the wave of the wave, the wave of the waves. In addition, in order to increase the absorption of the light source 27 by the twisting object 21 of the object to be plated 21, the heart is selected to select the light wave to be plated. The wavelength of the two originals can be selected from at least a second different absorption rate, so that the same absorption peak can be selected. If a high absorption rate of 丄27 is required, it is preferable to select at least the second wavelength from the second wavelength (four) two^7, 'can be selected from the second recording spectrum, in order to reduce the light source 乍 as the light source 27 wavelength. That is, the heating effect of the plating solution 24 on the light*, %% slit 24 is reduced, and the first wave has the absorption rate of the original 7, and the light source 27 can be selected from wavelengths other than the skin length. 1 In the measurement of the spectrum of the -i 201219612, the wavelength in the wavelength range == the measurement wavelength is deducted after at least one first wavelength = : number X wavelength. Preferably, the wavelength of light of the light source 27 can be reduced from a plurality of times: the absorption effect of the electric ship 24 on the light source 27 can be reduced to prevent the temperature of the brush plating liquid 24 from being excessively increased. Preferably, the light wavelength of the light source 27 can be selected simultaneously with reference to at least a first wavelength and at least a second wavelength, that is, a light filament having a wavelength not equal to at least the -first wavelength is selected from at least the second wavelength. As the light source, the heating effect on the electro-mineral liquid 24 can be reduced while the heating efficiency of the object 21 to be plated is increased. Please refer to the third figure, which is a χ_^ diffraction (XRD) pattern of an electrically wrought test piece of different substrate temperatures. The curve 3 is the XRD ® ' curve of the plating bath temperature 耽 and the substrate temperature is room temperature, the line μ is the plating solution, and the substrate temperature is 耽 XRD mesh. Here, the composition of the substrate as the object to be bonded is the surface (10) 美), and the winding of the M 位于 is located at 40.2. The position of the electron microscopy is bismuth, indium (CuInSe2, CIS), and the CIS diffraction peak is based on the JCPDS card of the Joint Committee on Powder Diffracti〇n standards (JCPDS) (JCPDS). Card), whose main diffraction peaks are located at 26.6, 44.1, 44.2 and 52.3. Represents the (112), (22), (204), and (316) faces of CIS. Comparing curve 31 with curve 32, curve 32 has a relatively obvious CIS (112) diffraction peak, which means that when the substrate temperature is higher, the electroplating material has better crystallinity, and thus there is a more obvious electric money object. Diffraction peaks. This is because the higher substrate temperature allows the plate to have a higher surface expansion rate on the surface of the substrate, so there is sufficient time for the elements to diffuse to the appropriate crystalline position' to produce a large number of (Π2) faces. The growth of CIS crystallizes. 9 201219612 In contrast, curve 31 has a relatively obvious M〇 substrate diffraction peak, while the CIS (112) diffraction peak is relatively insignificant, meaning that the substrate does not have good crystallinity when the substrate temperature is low. This is because the lower substrate temperature causes the surface diffusion rate of the electroplated material on the surface of the substrate to be lower, so that when the elements have not yet diffused to the appropriate (four) crystal position, a new electro-bond layer is generated and hindered.
電鍍物的表面擴散，而無法產生大量具有同一結晶面的CIS 結晶。此外，由於CIS結晶的緻密性不佳，也因此產生較多 Mo基板的X光繞射數。 。請參’四®(a)與第四_)，其係分別為魏液溫度 50C和基板溫度至溫以及電鍍液和基板溫度皆5〇。〇的表面 形貌圖’其中上述表面形貌圖係由掃插電子顯微鏡阶咖㈣ Electron Mic臟ope，贿)所拍攝。由兩圖比較可看出，基 板溫，較高時’電鍍膜層較為平坦，晶粒_缝隙較少且較 不明顯、’當基板溫度較低時，電親層較為_，晶粒間的 1較為明頒。攻疋因為基板溫度較高時，電鍵物具有較高 的表面擴散速度’可移動到適當的結晶位置，而可以產生敏 ^度較高的電賴層，相對表面粗糙度大幅下降。相反地， 度較低時’電鍍物具有較低的表面擴散速率，因此無 電鍍膜看產生前，移動到適當的結晶位置，故其緻 治度相對較低，且表面粗糙度相對較高。 言 =閱下表一’其為不同基板溫度的表面粗糙度比較 J ，、表面粗糙度係透過原子力顯微鏡(Atomic Force 的恭供2 AFM)所里測。由下表可看出，基板溫度為室溫 =、鍍=的表錄錢仏於聽溫度筑的電賴 為基板溫度較南時’電錢物於基板21上的表面擴 月父’、’較有充分的時間移動到適當的結晶位置 ，而較能以 201219612 相同的結晶面進行晶粒成長，故表面粗糙度相對較低。由 AFM以及SEM的量測結果以及觀察結果，可顯示出較高的 基板溫度，可提升電鍍膜層的緻密度，並降地膜層的表面 糙度。 --~~色二J不胜基板溫度的表面粗糙度比較 — 電鍍膜層參數 表面粗糙度(nm) 電錢液溫度50。〇，基板溫度室溫 53 ，基板溫度50°C 7.128The surface of the electroplated material is diffused, and a large amount of CIS crystals having the same crystal face cannot be produced. In addition, since the compactness of the CIS crystal is not good, the X-ray diffraction number of the Mo substrate is also generated. . Please refer to 'four® (a) and fourth _), which are respectively Wei liquid temperature 50C and substrate temperature to temperature and plating solution and substrate temperature are 5〇. The surface topography of the crucible 'the above surface topography is taken by the scanning electron microscope (4) Electron Mic dirty ope, bribe). It can be seen from the comparison of the two figures that the substrate temperature is higher, the plating layer is flatter, the grain gap is less and less obvious, and when the substrate temperature is lower, the electric layer is more _, between the grains 1 is more clearly stated. When the substrate temperature is high, the electrode material has a high surface diffusion speed, which can be moved to an appropriate crystallization position, and a high-sensitivity electric layer can be produced, and the relative surface roughness is greatly reduced. Conversely, when the degree is low, the electroplated material has a lower surface diffusion rate, so that the electroless film is moved to a proper crystallization position before it is produced, so that the degree of treatment is relatively low and the surface roughness is relatively high.言 = See Table 1 below for the surface roughness comparison J of different substrate temperatures, and the surface roughness is measured by atomic force microscopy (Atomic Force's 2 AFM). As can be seen from the table below, the substrate temperature is room temperature =, the plating of the table is recorded, and the temperature of the substrate is the temperature of the substrate. When the temperature of the substrate is relatively south, the surface of the substrate is expanded on the substrate 21, ' It has a sufficient time to move to a proper crystallization position, and it is more capable of grain growth with the same crystal face of 201219612, so the surface roughness is relatively low. The measurement results and observation results of AFM and SEM can show a higher substrate temperature, which can increase the density of the plating film layer and lower the surface roughness of the film layer. --~~ Comparison of surface roughness of the substrate temperature of the two-color substrate - Plating film parameters Surface roughness (nm) Electricity liquid temperature 50. 〇, substrate temperature room temperature 53 , substrate temperature 50 ° C 7.128
凊麥閱第五®，其係為本發明電财法流賴，其步 ^ . (S51)將-待㈣設置在—電極上；_將該電極 接笔路電性連接’·（S53)將該待鍍物至於—電鑛液中S、 物上施加一熱能;鄉5)外接i路施加1 言月“并參閱第二圖⑷與第二圖⑻以 S51二可將作為待鍵物的待㈣21在= 地’右待鍍物21本身可導電，即可作為 二-Μ 作電極來使用。 —261的外殼可導電，亦可舊 在步驟S52中，將電錢電源供應 232上而形成外接電路，外接電路的; ^電鍵電綉 22以及設置有待链物2!的陰極電桮。二，上陽極電招 身可導電時，外接電路可直接與待 土地’若待鍍物本 地，若加熱器261外殼可導電以作^ 士電性連接。較信 加熱器261電性連接。 ' 包—陪，外接電路可負 在步驟S53中，將陰極電極連同待 丄陽極電極2: 201219612 以及加熱If 261浸泡於電舰24 _。若能量提供裳置係為光 =7時，則將待㈣21以及陽極電極22浸泡 即可，光源27可置於電錢外。較錢，切^ 電鍵液24中’以使待㈣21與麵27之間驗離更近。 在步驟S54中，由加熱電源供應器加提供 電流通過加熱器電線262流入加熱器261中，使加埶哭261 直接對待鍍物21進行加熱。若能量提供t置係為光源η時， 將光源27的開關打@，即可使光源27開始騎特定光 的光波’以對待錄物21進行加熱。 乂 在4S55中’由外接電路提供―電流，藉由電錢電源 供應器放、電鍍電線232、待鐘物2卜電錢液24以及陽極 電極24卿成的通路’使本案之電齡⑽始進行—電錢製 程。 又衣 在上述的實施例中，除了透過加熱器261以及光.源27 的方式加熱外’可透過其他的方式直接對待㈣21進行加 熱，亦可合併多種不同的加熱方式進行加熱。此外，加熱器 261的設置方式除了本案圖式所揭露的方式之外，亦可有 他的設置方式。較佳地，待鍍物21除了需要電鍍獏層的表面 外’皆可由加熱器261完全包覆，來維持待鍍物21整體溫度 的均勻性，然而此設置方式可能使加熱器261加熱電鍍液24 的加熱面積較大，而使電鍍液24的溫度較高。較佳地，加熱 器261能以多點設置的方式設置於待鑑物21上，如此一來可 減少加熱器261與電鍍液24的接觸面積，以降低電鍍液24 被加熱的程度，然而此設置方式可能使待鍍物21整體溫度的 均勻性較差。因此，可視電鍍膜層的需求，來決定要以何種 設置方式來設置加熱器261 12 201219612 在上述實施例中，加熱 24。然而待麵21的溫度 難免會加熱到電錄液 上升’就算電賴的電沉積速率，因電I鍍擴散速率 變快，電鍍物仍可因表面擴散速率:吏:二二:: 較於^加熱電罐來的平整，且有較佳的=膜層相 在=實_中，除了加熱電魏等方式來提升電鑛速 f卜亦可提咼外接電路所提供的 ^玄 :必會使電鍵膜層的粗縫度提高且結晶度; ’即可在較快的電鍍迷率下，仍維持較為; 正的包錢膜層，以及結晶性較好的晶检。 在上述實_巾’―般電㈣統的祕 2士1的溶點都會比電鍍液24㈣點高，因此在加轉;^ ^需將待㈣21的溫度㈣在電鍍液24㈣點以;，以 蝴糊^使電鍵液 —請參閱第六圖，其係為本發明經電賴程製作的 不忍圖。㈣6經電鑛完成後，可再經快速升溫的方式，以 避免録鍊鑄造或粉賴結的長咖加熱触。因此 鍵的方式㈣造的糾6’ _製作出包含_較低的元^ :，材’例如··鋼銦硒(CuInSe，CIS)以及鋼錮鎵硒 相。此外，透過本錢電鍍系統以 及电鍵方式，可使乾材6不會有—般電鍍產品具有大量 的問題，因此可避免局部放電的狀況。 、 在上述實施例中，由於電鍍係有大面積的生產特性，且 不需加熱至高溫並長時間的持溫，因此相對成本較為低廉， 有助於乾材大規模的生產。另外，由於乾材有其特定的形狀， 201219612 因此亦可將模具作為ϋ!物來限觀材的做，並於 完成後’再將模具與乾材分離。此外，亦可直接以—平 為待鍍物，來進行大面積的製造，在經由後續加工的方 達到特定形狀。 > “ 實施例 1. 一種製造靶材的電鍍方法的步騾包括：直接於— 鍍物上提供一熱能以及對該待鍍物實施一電鍍製裎。、待 2·如實施例1中的方法，其中該靶材為乾、合金說。 3.如實補1〜2㈣任何—個實關巾的方法， 熱能係透過一加熱器直接對該待鍍物加熱。 ζ、〜 力二2實施例1〜3中的任何—個實補中的方法，复中兮 加熱态係处過一電能來產生的該熱能。 、甲4 熱丄；方法， 電鍍製程極:’其中該 接電-及‘物及::: 光波長係參料i1〜7中的任何—個實施例中的麵，复中 吸收光譜_出^液的—第―吸收光譜來選取，而該第、 吸收 “1,測波長 吸 9·如貧施心〜8中的任何—個實施例中的订方=其中將 201219612 該等量測波長扣除該第—吸收數 光波長選自該等可選波長。 x ”、、 适波長，而該 1〇·如實施例1〜9中沾紅y 光波長係參考該待鍵物的1F個實施例中的方法，其中該 收光譜顯示出該待鑛物的—ί— 及收光譜來選取’而第二吸 J 乐二吸收波長。 11·如實施例1〜10中的彳 光波長係選自該第二吸收It何-個實施例中的方法，其中該 12·如實施例1〜11中的紅The fifth edition of the buckwheat is the reliance on the invention of the invention, and the step (^) is to set the (four) on the electrode; _ electrically connect the electrode to the pen' (S53) Applying a thermal energy to the S to the electro-mineral liquid, and applying a thermal energy to the S-throic material; 5) applying an external i-channel for 1 month "and referring to the second figure (4) and the second figure (8) to the S51 two Waiting for (4) 21 at = ground 'right to be plated 21 itself can be electrically conductive, can be used as a second - Μ electrode. - 261 the outer casing can be electrically conductive, or in the old step S52, the electricity supply 232 Forming an external circuit, an external circuit; ^Electric key embroidering 22 and a cathode electric cup provided with a chain 2!. Second, when the upper anode is electrically conductive, the external circuit can be directly connected with the land to be plated. If the heater 261 outer casing can be electrically conductive for electrical connection, the heater 261 is electrically connected. 'Package-external, the external circuit can be negative in step S53, and the cathode electrode is combined with the anode electrode 2 to be smashed: 201219612 Heating If 261 soaked in the electric ship 24 _. If the energy supply is set to light = 7, then the (four) 21 and the anode electrode will be 22 soaking, the light source 27 can be placed outside the electric money. Compared with the money, cut the ^ key liquid 24 'to make the distance between the (4) 21 and the surface 27 closer. In step S54, provided by the heating power supply The current flows into the heater 261 through the heater wire 262, so that the twisting 261 directly heats the plating material 21. If the energy supply t is set to the light source η, the light source 27 is turned on and the light source 27 is started. The light wave of the specific light is heated by the object 21 to be recorded. 乂 In 4S55, 'current is supplied by an external circuit, by the electric money supply, the electroplating wire 232, the object 2, the electric liquid 24 and the anode The path of the electrode 24 is made to make the electric age (10) of the present case start--the money-making process. In the above embodiment, in addition to the heating by the heater 261 and the light source 27, it can be directly transmitted through other means. Heating (4) 21 may be combined with a plurality of different heating methods for heating. In addition, the heater 261 may be arranged in a manner other than that disclosed in the drawings of the present invention. Preferably, the object to be plated is provided. 21 in addition to electricity The outer surface of the crucible layer can be completely covered by the heater 261 to maintain the uniformity of the overall temperature of the object to be plated 21. However, this arrangement may cause the heating area of the heater 261 to heat the plating solution 24 to be large, thereby making the plating solution The temperature of 24 is higher. Preferably, the heater 261 can be disposed on the object 21 in a multi-point arrangement, so that the contact area of the heater 261 and the plating solution 24 can be reduced to reduce the plating solution 24 The degree of heating, however, this arrangement may make the overall temperature uniformity of the object to be plated 21 poor. Therefore, depending on the demand of the plating film layer, it is determined in which setting manner the heater is to be set. 261 12 201219612 In the above embodiment , heating 24. However, the temperature of the surface 21 will inevitably heat up to the rise of the electro-acoustic liquid. Even if the electrodeposition rate of the electrode is increased, the plated material can still diffuse due to the surface diffusion rate: 吏: 22:: Compared with ^ Heating the electric tank to flatten, and there is a better = film phase in the = real _, in addition to heating electric Wei and other ways to improve the electric mine speed f can also improve the external circuit provided by the ^ Xuan: will definitely The thick seam of the electro-bonding layer is improved and the crystallinity is improved; 'that can be maintained at a faster plating rate; a positive coating layer, and a crystallized crystal having better crystallinity. In the above-mentioned real _ towel '----------------------------------------------------------------------------------------------------------------------------------------- The paste ^ makes the key liquid - please refer to the sixth figure, which is the unbearable picture made by the electrophoresis process of the present invention. (4) After the completion of the electric ore mine, it can be heated up quickly to avoid the heating of the long chain of the casting chain or the powder. Therefore, the method of the key (4) makes the correction 6' _ to produce a lower _ element, a material such as steel indium selenide (CuInSe, CIS) and a steel lanthanum gallium selenide phase. In addition, through the cost plating system and the electric key method, the dry material 6 does not have a large number of problems in the general plating product, so that partial discharge can be avoided. In the above embodiment, since the electroplating system has a large-area production characteristic and does not need to be heated to a high temperature and held for a long time, the relative cost is relatively low, which contributes to large-scale production of dry materials. In addition, since the dry material has its specific shape, 201219612 can also be used as a material to limit the viewing of the material, and after the completion, the mold is separated from the dry material. In addition, it is also possible to directly manufacture a large area with the flat material to be plated, and to achieve a specific shape by subsequent processing. > "Example 1. A step of electroplating a method of manufacturing a target includes: providing a thermal energy directly on the plating material and performing a plating process on the object to be plated. The method, wherein the target is dry, alloy said. 3. As a matter of fact, 1 to 2 (4) any method for actually closing the towel, the thermal energy is directly heated by the heater to the object to be plated. ζ, ~ force 2 embodiment Any of the methods in 1 to 3, the method of solid compensation, the heating state of the heating medium is generated by an electric energy. A, 4 enthalpy; method, electroplating process: 'where the power-and- And::: The light wavelength is the surface of any of the reference materials i1 to 7, the surface of the complex absorption spectrum is extracted from the first absorption spectrum, and the first absorption is "1". Wavelength absorption 9 - any of the lean cores ~ 8 - the prescription in an embodiment = where 201219612 the measurement wavelengths are subtracted from the first absorption wavelength selected from the selectable wavelengths. x 、, a suitable wavelength, and the wavelength of the red y light in Examples 1 to 9 refers to the method in the 1F embodiment of the object to be bonded, wherein the received spectrum shows the mineral to be- And </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> 12. Red as in Examples 1-11
待錄物的-溫度需低於該電錢夜7的^例中的方法，其中該 / 13. —種用以製作靶材的電“ 待鍍物的-電極以及用以直：…帛以連結-量提供裝置。 接砭加一熱能於該待鍍物的一能 14·如實施例13中的雷妒备 合金乾。 又二统，，、中該乾材為金屬乾、 15.如實施例13〜14中的权& , 一 令該能量提供裝置係為-1= 貫施例的電鍍系统，其 中兮:6- „如，、關13〜15中的任何—個實施例的電㈣统，I 遠加熱益係透過-電能來產生的該熱能。 ’、统其 如實施例13〜16中的任何—個實施例的 ，讀供裝置細熱料的方式加熱在該待鍍物^其 .如貫施例13〜17中的任何一個實施 ^括用以浸泡該待鍍物以進行统飞 讀電極連接以提# 一、㈣讀液以及鱼 、银乂㈣$流來進盯该電錢製程的一外接界 中>〜如貫麵13〜18㈣任何—個實關的電齡、统。 ‘置触裝置係為具有一光波長的-光源提供。其 20.如貫施例l^9中的任何—個實施例的電鎮系统， 201219612 麥考該電鍍液的-第-吸收光譜來選取 弟-吸收鱗顯示出讀電鍍液的—第—吸收波，而該 吸收光城於魏量·長中進行制。、’且該第― 21.如實_13〜2〇中的任何一個實施例 中將該等量測波長扣除該 具 鍍系统，其 而該光波長選自該等可選波長。/…，、灵可選波長， 中該任：個實施例的電鍍系統，其 芩°亥待鍍物的一第二吸收光譜來潠敌， -吸收切顯示*該待鍵物的—第二吸收波長。'而弟 兮*實施f列I3〜22中的任何一 中該光波長係選自該第二吸收波長。 讀系統，其 如實施例13〜23中的任何一個實施例的電 中该存鍵物的-溫度需低於該電驗的滞點。h、、”，、 菸明、ra :述’:鈿例僅係為了方便說明而舉例，並非限制本 發月悉本技#之人士在村t本發明之精神，對於 ίίίϊ例進行修改、變化，㈣不脫如时請專利範圍所 【圖式簡單說明】 弟圖（a)為結晶性和緻密性不佳的電鍵膜層示意圖； 第一圖(b)為結晶性和緻密性良好的電鍍膜層示意圖； 第二圖（a)為本發明待鍍物加熱的電鍍系統示意圖； 第一圖(b)為本發明待錢物照光的電錢系統示意圖； 第三圖為不同基板溫度的電鍍試片的又_光以_1^力繞射 201219612 第四圖（a)為電鍍液溫度5〇。〇和待鍍物溫度室溫的 試片的SEM圖； x 第四圖（b)為電鍍液和待鍍物溫度皆為5〇。〇的電铲 的SEV[圖；以及 又。乃 第五圖為本發明電鍍方法的流程圖。 第六圖為本發明經電鍍製程製作的靶材的示意圖。 【主要元件符號說明】 11 ' 12電鑛膜層 112、122第一電鍍層原子 21 231 24 261 263 551 552 553 554 555 6 111 113 22 232 25 262 27 121 123 待錢物 電鑛電源供應器 電鐘液 加熱器 加熱電源供應器 將一待鍍物設置在—電極上 將該電極與外接電路電性連接 將3亥待鐘物至於一電錢液中 直接於該待鍍物上施加一熱外 待鍍物表面 第二電鍍層原子 陽極電極 cTi* /35» // 私緩電線 電鍍液容器 加熱器電線 光源 外接電路施加一 靶材 月&以進行電鐘The temperature of the object to be recorded needs to be lower than that of the method of the electricity bank night 7, wherein the /13 is used to make the target "electrode of the object to be plated and used to straighten: ... a connection-quantity providing device. A heat energy is applied to the material to be plated. 14. The thunder alloy is dried as in the embodiment 13. The second and the dry materials are dry metal, 15. The weights of the embodiments 13 to 14 are such that the energy supply device is -1 = the electroplating system of the embodiment, wherein: - -, for example, any of the embodiments 13 to 15 The electric (four) system, I far heating is the heat energy generated by the electric energy. ', as in any of the embodiments of Examples 13 to 16, the heating device is heated in the manner of the device to be plated. Any one of the embodiments 13 to 17 is implemented. It is used to soak the object to be plated for the fly-by-read electrode connection to extract #一, (4) reading liquid and fish, silver 乂 (4) $ stream to enter the outer boundary of the money-making process>~如面面13~ 18 (4) Any - a true age of electricity, system. The 'touch device is provided as a light source having a wavelength of light. 20. The electro-well system of any of the embodiments of Example l^9, 201219612 McCaw's electroplating solution - the first absorption spectrum to select the di-absorption scale to show the reading of the electroplating solution - the first absorption Wave, and the absorption light city is carried out in Weiliang and Changzhong. And in any one of the embodiments of the present invention, wherein the measuring wavelength is subtracted from the plating system, and the wavelength of the light is selected from the selectable wavelengths. /...,, the optional wavelength of the wavelength, in the electroplating system of an embodiment, the second absorption spectrum of the coating to be smashed, the absorption cut display * the second to be keyed - the second Absorbing wavelength. And the light wavelength of any one of the f columns I3 to 22 is selected from the second absorption wavelength. A read system, such as the one of the embodiments 13 to 23, wherein the temperature of the deposit is lower than the hysteresis of the test. h,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, (4) If you are not taking off, please refer to the patent scope [Simple description of the diagram] The figure (a) is a schematic diagram of the key layer of crystallinity and compactness; the first diagram (b) is a crystal with good crystallinity and compactness. The second layer (a) is a schematic diagram of the electroplating system for heating the object to be plated according to the present invention; the first figure (b) is a schematic diagram of the electric money system for the light of the object to be illuminated; The _ light of the test piece is diffracted by _1 ^ force 201219612 The fourth picture (a) is the temperature of the plating solution 5 〇. SEM image of the test piece of the temperature of the object to be plated at room temperature; x Figure 4 (b) is The temperature of the plating solution and the object to be plated are 5 〇. The SEV of the shovel of the shovel [Fig.; and Fig. 5 is a flow chart of the plating method of the present invention. The sixth figure is the target made by the electroplating process of the present invention. Schematic diagram of [main component symbol] 11 '12 electric mineral film layer 112, 122 first plating layer atom 21 231 24 261 263 551 552 553 554 555 6 111 113 22 232 25 262 27 121 123 Waiting for money, electricity, power supply, electric clock, liquid heater, heating, power supply, setting a plating object on the electrode, connecting the electrode to the external The electrical connection of the circuit is to apply a hot external object to be plated on the surface of the object to be plated. The second plating layer atomic anode electrode cTi* /35» // the private wire plating solution The container heater wire source external circuit applies a target month & for the electric clock