201218458 六、發明說明： 【發明所屬之技術領域】 特別是指一種發光二極體。 [0001] 本發明涉及一種二極體 【先前技術】 [0002] 發光—極體憑藉其高光效、低能耗、無污染等優點，已 被應用於越來越多的場合之中，大有取代傳統光源的趨 勢。 闺發極體是騎制電㈣發其發S晶#的方式進行 〇 發光。根據賴用的材料，發光二賴的晶片能夠轄射 出各種相應的可見光錢不可見光，範圍涵蓋紫外至紅 外波段。對於紫外發光晶片而言，其既可搭配RGB(紅綠 藍）二色螢光粉使用來合成白光以進行照明，也可以單獨 使用來達到殺菌、淨化、探測、固化等目的。因此，紫 外發光晶片的應用較為廣泛，然而，由於發光二極體基 座通常是由塑膠材質製成，;其對於紫外線的耐性較低， 在經過長時間照射之後容易發生黃化甚至於脆裂，造成 Q 發光二極體的使用壽命降低》 [0004]因此，有業者採用在基座的内壁覆蓋一層金屬薄膜，以 通過金屬薄膜的反射防止紫外線直接照射到基座内壁。 然而，由於金屬薄膜具有導電性，其必然要與金屬引腳 隔開而導致無法完全覆蓋基座内壁。並且，由於制程原 因’發光二極體的基座在正負引腳之間的區域也往往沒 有金屬薄膜覆蓋。因此，基座未被金屬薄膜覆蓋的區域 仍舊會受到紫外線的照射而導致上述黃化及脆裂的問題 產生。 099136235 表單編號A0101 第3頁/共12頁 0992063346-0 201218458 【發明内容】 [0005] 因此，有必要提供一種不易黃化及脆裂的發光二極體。 [0006] 一種發光二極體，包括基座、固定於基座上的第一引腳 及第二引腳、電連接第一引腳及第二引腳的發光晶片及 覆蓋發光晶片的封裝體，該發光晶片可發出紫外光，基 座暴露於發光晶片照射範圍内的表面覆蓋有絕緣保護膜 〇 [0007] 該發光二極體由於採用了絕緣保護膜對基座進行保護， 可不受二引腳的影響而覆蓋住位於發光晶片照射範圍内 的基座表面，因此可防止紫外線對基座照射所帶來的黃 化及脆裂的問題。 【實施方式】 [0008] 請參閱圖1，示出了本發明的發光二極體。該發光二極體 包括一基座10、分別固定於基座10相對兩端的一第一引 腳20及一第二引腳30、安裝於第二引腳30上的發光晶片 40、覆蓋基座10内表面的絕緣保護膜50及覆蓋發光晶片 40的封裝體60。 [0009] 該基座10由塑膠所製成，其頂面開設一凹槽（圖未標）而 在其上部形成一環狀的側壁12。第一引腳20及第二引腳 30均由金屬材料製成，二者分別插設於基座10下部的相 對兩端。第一引腳20與第二引腳30相互隔開以避免短路 。第一引腳20及第二引腳30均包括位於基座10底面的接 觸段24、34、暴露於凹槽底部的接線段22、32及連接接 觸段24、34及接線段22、32的連接段26、36。該接觸段 24、34用於與外部的電路結構（圖未示）連接以將電能輸 099136235 表單編號A0101 第4頁/共12頁 0992063346-0 201218458 入進發光二極體内。該接線段22、32用於與發光晶片4〇 電連接，以驅動發光晶片40發光。該接線段22、32平行 於接觸段24、34且垂直於連接段26 ' 36。 〇 [0010] 該發光晶片40固定於第二引腳30的接線段32表面，其是 由氮化鎵、氮化銦鎵等半導體化合材料所製成。發光晶 片40在通電之後可輻射出波長介於i9〇nm〜400nm的紫外 光。發光晶片40通過二金線42分別連接至第—弓丨腳2〇及 第二引腳30的接線段22、32以實現電性導通。當然，發 光晶片40也可採用倒裝（flip-chip )的方式直接固定於 第—引腳20及第二引腳30的接線段22、32表面，而無需 使用金線42。 [0011] 請一併參閱圖2該絕緣保護膜50覆蓋凹槽的整個側壁面及 底面中位於第一引腳20及第二引腳30之間的區域，即直 接暴露在發光晶片40照射範圍内的基座10表面均有絕緣 保護膜50覆蓋。該絕緣保護膜50為一由二氧化發、氮化 發等玻璃類或陶瓷類材料所製成的布拉格反射媒201218458 VI. Description of the invention: [Technical field to which the invention pertains] In particular, it refers to a light-emitting diode. [0001] The present invention relates to a diode [Prior Art] [0002] The light-emitting body has been applied to more and more occasions due to its advantages of high luminous efficiency, low energy consumption, and no pollution, and has been greatly replaced. The trend of traditional light sources. The 闺 极 是 是 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑Depending on the materials used, the luminescent wafers are capable of emitting a variety of corresponding visible light invisible light, ranging from the ultraviolet to the infrared. For UV-emitting wafers, it can be used with RGB (red, green and blue) dichroic phosphors to synthesize white light for illumination, or it can be used alone for sterilization, purification, detection, curing, etc. Therefore, the application of the ultraviolet light-emitting chip is extensive, however, since the light-emitting diode base is usually made of a plastic material; its resistance to ultraviolet light is low, and yellowing or even cracking is likely to occur after a long period of irradiation. Therefore, the service life of the Q light-emitting diode is lowered. [0004] Therefore, the manufacturer uses a metal film on the inner wall of the pedestal to prevent ultraviolet rays from directly illuminating the inner wall of the susceptor through the reflection of the metal film. However, since the metal thin film is electrically conductive, it is inevitably separated from the metal pin so that the inner wall of the pedestal cannot be completely covered. Moreover, due to the process principle, the pedestal of the light-emitting diode is often not covered by a metal film in the region between the positive and negative pins. Therefore, the area where the susceptor is not covered by the metal film is still exposed to ultraviolet rays, causing the above problems of yellowing and embrittlement. 099136235 Form No. A0101 Page 3 of 12 0992063346-0 201218458 SUMMARY OF THE INVENTION [0005] Therefore, it is necessary to provide a light-emitting diode that is not easily yellowed and brittle. [0006] A light emitting diode comprising a susceptor, first and second pins fixed on the pedestal, an illuminating chip electrically connecting the first pin and the second pin, and a package covering the illuminating chip The illuminating chip can emit ultraviolet light, and the surface of the pedestal exposed to the illuminating range of the illuminating chip is covered with an insulating protective film. [0007] The illuminating diode protects the pedestal by using an insulating protective film, and is not subject to The effect of the foot covers the surface of the susceptor located within the illumination range of the illuminating wafer, thereby preventing the problem of yellowing and embrittlement caused by ultraviolet irradiation on the susceptor. [Embodiment] Referring to Fig. 1, a light emitting diode of the present invention is shown. The illuminating diode includes a pedestal 10, a first pin 20 and a second pin 30 respectively fixed to opposite ends of the pedestal 10, a luminescent wafer 40 mounted on the second pin 30, and a pedestal An insulating protective film 50 on the inner surface of the 10 and a package 60 covering the light emitting wafer 40. [0009] The base 10 is made of plastic, and has a groove (not shown) on its top surface and an annular side wall 12 at its upper portion. The first pin 20 and the second pin 30 are both made of a metal material, and are respectively inserted at opposite ends of the lower portion of the susceptor 10. The first pin 20 and the second pin 30 are spaced apart from each other to avoid a short circuit. The first pin 20 and the second pin 30 each include a contact segment 24, 34 on the bottom surface of the base 10, a wiring segment 22, 32 exposed to the bottom of the groove, and connection contact segments 24, 34 and wiring segments 22, 32. Connection segments 26, 36. The contact segments 24, 34 are connected to an external circuit structure (not shown) for inputting power into the light-emitting diodes in the form of a 099136235 form number A0101 page 4 / page 12 0992063346-0 201218458. The wiring segments 22, 32 are for electrically connecting to the light-emitting chip 4'' to drive the light-emitting wafer 40 to emit light. The segments 22, 32 are parallel to the contact segments 24, 34 and perpendicular to the connecting segments 26'36. [0010] The luminescent wafer 40 is fixed to the surface of the wiring segment 32 of the second lead 30, which is made of a semiconductor compound such as gallium nitride or indium gallium nitride. The light-emitting wafer 40 can emit ultraviolet light having a wavelength of from i9 〇 nm to 400 nm after being energized. The illuminating wafer 40 is connected to the first and second pin 30 segments 22, 32 via the two gold wires 42 to electrically conduct. Of course, the light-emitting chip 40 can also be directly attached to the surface of the wiring segments 22, 32 of the first pin 20 and the second pin 30 in a flip-chip manner without using the gold wire 42. [0011] Please refer to FIG. 2 together with the insulating protective film 50 covering the entire sidewall surface and the bottom surface of the recess between the first lead 20 and the second lead 30, that is, directly exposed to the illumination range of the illuminating wafer 40. The surface of the susceptor 10 is covered with an insulating protective film 50. The insulating protective film 50 is a Bragg reflector made of glass or ceramic material such as oxidized hair or nitrided hair.
(Di stributed BMgg Ref lector) ’ 其包括多層第一 折射層52及第二折射層54。第一折射層52的折射率大於 第二折射層54的折射率。第一折射層52與第二折射層54 交替層疊，且與基座10内表面接觸及位於最外面的均為 第一折射層52。第一折射層52及第二折射層54的厚度均 為λ/4(又為發光晶片40發出的紫外光波長），以使發光 晶片4 0照射在絕緣保護膜5 0上的光能夠發生布拉格反射 。經由布拉格反射膜的反射，發光晶片40朝向基座1〇内 側壁面及底面的紫外光可被有效地反射回凹槽内，從而 099136235 表單編號Α0101 第5頁/共12頁 0992063346-0 201218458 提升光利用率。並且，由於布拉格反射膜的反射率較高（ 可達到99%以上），因此僅有非常少量的光透射過布拉格 反射膜到達至基座10内侧壁面及底面，從而確保基座10 基本不會受紫外線影響而致黃化或者脆裂。 [0012] 封裝體60填滿凹槽以保護位於凹槽内的發光晶片40。封 裝體60由聚碳酸酯或者聚甲基丙烯酸曱酯等透明材料所 製成。封裝體60内均勻地摻雜有螢光粉顆粒70，以受紫 外光的激發而輻射出可見光。該螢光粉顆粒70可由釔鋁 石榴石、氮化物、氮氧化物、矽酸鹽等螢光材料所製成 ，具體取決於實際的光色需求。 [0013] 為進一步提升光利用率，使更多的紫外光能夠照射到螢 光粉顆粒70上，封裝體60内還掺雜有反射顆粒80。反射 顆粒80可由雲母、二氧化鈦、氧化鋅等對於紫外光有較 高反射率的材料製成，其粒徑介於0. 1 //m〜0. 3 μ m之間 。通過反射顆粒80的反射，可改變原本未經過螢光粉顆 粒70的紫外光的光路，使其有一定幾率照射到螢光粉顆 粒70上。因此，發光二極體的出光效率相應地得到了提 升。 [0014] 另外，應當指出，當反射顆粒80選用二氧化鈦作為其材 料時，紫外光的波長應當限制在375nm之上，以避免激發 出二氧化鈦的自由基而導致反射效果下降的問題。 [0015] 綜上所述，本發明符合發明專利要件，爰依法提出專利 申請。惟，以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等效修 099136235 表單編號A0101 第6頁/共12頁 0992063346-0 201218458 飾或變化，皆應涵蓋於以下之申請專利範圍内 【圖式簡單說明】 [0016] 圖1示出了本發明發光二極體的剖面圖。 [0017] 圖2示出了圖1中發光二極體的部分放大圖 【主要元件符號說明】 [0018] 基座：10 [0019] 第一引腳：20 [0020] 接線段：22 [0021] 接觸段：24 [0022] 連接段：26 _ 1__議.』 [0023] 第二引腳：30 [0024] 接線段：32 [0025] 接觸段：34 [0026] 連接段：36 ..-: / ： [0027] 發光晶片：40 [0028] 金線：42 [0029] 絕緣保護膜：50 [0030] 第一折射層：52 [0031] 第二折射層：54 [0032] 封裝體：60 表單編號A0101 第7頁/共12頁 Ο 〇 099136235 0992063346-0 201218458 [0033] [0034] 螢光粉顆粒 反射顆粒. ：70 80 099136235 表單編號A0101 第8頁/共12頁 0992063346-0(Di stributed BMgg Ref lector)' includes a plurality of first refractive layers 52 and second refractive layers 54. The refractive index of the first refractive layer 52 is greater than the refractive index of the second refractive layer 54. The first refractive layer 52 and the second refractive layer 54 are alternately laminated, and the first refractive layer 52 is in contact with the inner surface of the susceptor 10 and located at the outermost surface. The thicknesses of the first refractive layer 52 and the second refractive layer 54 are both λ/4 (also the wavelength of ultraviolet light emitted by the light-emitting wafer 40), so that the light irradiated onto the insulating protective film 50 by the light-emitting wafer 40 can occur in Prague. reflection. Through the reflection of the Bragg reflection film, the ultraviolet light of the light-emitting chip 40 facing the inner wall surface and the bottom surface of the susceptor 1 can be effectively reflected back into the groove, thereby 099136235 Form No. 1010101 Page 5 / Total 12 Page 0992063346-0 201218458 Lifting light Utilization rate. Moreover, since the reflectance of the Bragg reflection film is high (up to 99% or more), only a very small amount of light is transmitted through the Bragg reflection film to reach the inner wall surface and the bottom surface of the susceptor 10, thereby ensuring that the susceptor 10 is substantially unaffected. Yellowing or brittle cracking caused by ultraviolet light. [0012] The package 60 fills the recess to protect the luminescent wafer 40 located within the recess. The package body 60 is made of a transparent material such as polycarbonate or polymethyl methacrylate. The package body 60 is uniformly doped with phosphor particles 70 to emit visible light by excitation of ultraviolet light. The phosphor particles 70 can be made of a fluorescing material such as yttrium aluminum garnet, nitride, oxynitride or bismuth, depending on the actual light color requirement. [0013] In order to further enhance the light utilization efficiency, more ultraviolet light can be irradiated onto the phosphor powder particles 70, and the package body 60 is further doped with the reflective particles 80.微米之间之间。 The reflective particles 80 may be made of mica, titanium dioxide, zinc oxide, etc., having a high reflectivity for the ultraviolet light, having a particle size of between 0.1 and m. By the reflection of the reflective particles 80, the optical path of the ultraviolet light which has not been passed through the phosphor particles 70 can be changed to have a certain probability of being irradiated onto the phosphor particles 70. Therefore, the light-emitting efficiency of the light-emitting diode is correspondingly improved. [0014] In addition, it should be noted that when the reflective particles 80 are selected from titanium dioxide as the material thereof, the wavelength of the ultraviolet light should be limited to 375 nm to avoid the problem that the free radical of the titanium oxide is excited to cause a decrease in the reflection effect. [0015] In summary, the present invention complies with the requirements of the invention patent, and submits a patent application according to law. However, the above is only a preferred embodiment of the present invention, and those skilled in the art will be equivalent to 099136235 in the spirit of the present invention. Form No. A0101 Page 6 / Total 12 Page 0992063346-0 201218458 </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 2 is a partial enlarged view of the light-emitting diode of FIG. 1 [Main component symbol description] [0018] Base: 10 [0019] First pin: 20 [0020] Wiring section: 22 [0021] Contact section: 24 [0022] Connection section: 26 _ 1__ Discussion.』 [0023] Second pin: 30 [0024] Wiring section: 32 [0025] Contact section: 34 [0026] Connection section: 36 .. -: / : [0027] Light-emitting wafer: 40 [0028] Gold wire: 42 [0029] Insulating protective film: 50 [0030] First refractive layer: 52 [0031] Second refractive layer: 54 [0032] Package: 60 Form No. A0101 Page 7 of 12 Ο 〇099136235 0992063346-0 201218458 [0033] Fluorescent powder particles reflecting particles. :70 80 099136235 Form No. A0101 Page 8 of 12 0992063346-0