TW201215250A - Plasma processing device and plasma processing method - Google Patents

Abstract

The disclosed plasma processing device (100) is provided with: a processing vessel (1); a table (3) that supports a plurality of wafers (W); and a plurality of microwave introduction units (27) that introduce electromagnetic waves for causing the generation of plasma at a plurality of sites within the processing vessel (1). The configuration is such that each of the wafers (W) carried on the carrying region (SR) of the table (3) can move relatively in a manner so as to pass through a position facing the microwave-transmitting region of the transmitting plate (28) of at least one of the microwave introduction units (27). The transmitting plates (28) can be disposed in a manner so that the time integral value of plasma density and/or the integral value of plasma irradiation time is the same at any position over the wafers.

Description

201215250 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus and a plasma processing method for guiding electromagnetic waves of a predetermined frequency to a processing container to cause plasma to be processed into a processed object. [Prior Art] For the object to be processed such as a semiconductor wafer, for example, plasma treatment such as oxidation treatment, nitrogenation treatment, CVD (Chemical Vapor Deposition) treatment, or starving treatment is performed. The plasma processing apparatus is known in the art of a slit antenna type plasma processing apparatus which uses a planar antenna having a plurality of slits to introduce microwaves into a processing container to generate plasma. Further, in another type of plasma processing apparatus, there is a plasma processing apparatus of an Inductively Coupled Plasma (ICP) type in which a high frequency is introduced into a processing container by a coil-shaped antenna to generate plasma. Known. Such a plasma processing apparatus can generate high density plasma in a processing vessel. For the development of the device after the next generation, for example, while improving the productivity of the three-dimensional device processing or miniaturization, it is necessary to process a plurality of processed objects while ensuring the uniformity of the processing in the substrate surface. Alternatively, the substrate to be processed is currently grown to a diameter of 450 mm in a substrate having a diameter of 300 mm. In response to this, it is necessary to uniformize the distribution of the plasma density in the processing container which is enlarged corresponding to the substrate. In the above-described slot antenna type plasma processing apparatus, the density control of the plasma generated in the processing container is performed by the shape or arrangement of the slit, the shape design of the container or the microwave introduction window, and the like. For example, in order to change the distribution of plasma density in accordance with the processing content, it is necessary to replace the planar antenna with a shape or configuration of a different slit. Further, in the plasma processing apparatus of the ICP method described above, in order to change the distribution of the plasma density, it is necessary to convert the antenna into a different coil shape or arrangement. However, the replacement of this antenna is a time-consuming and laborious large-scale operation. Further, the distribution of the plasma density generated in the processing vessel can be finely adjusted by, for example, changing process parameters such as microwave power, processing pressure, gas flow rate, and the like. However, these process parameters cannot be separated from the process conditions, so that the variation width (limit) of the plasma density distribution in the range in which the process parameters vary can be made small, and the effect is limited. Further, due to factors such as manufacturing tolerances of the planar antenna and the processing container, assembly errors, and machine differences between devices of the same type, there is a case where the symmetry of the plasma in the processing container collapses and the distribution of the plasma density is eccentric. occur. In this case, there is no simple way to correct the problem, and there is a problem that a large-scale device change such as replacement of a planar antenna is required. However, in order to simultaneously process a plurality of large-sized substrates, a plurality of microwave introduction windows are provided, and a plasma processing apparatus in which a sample stage is provided under each of the microwave introduction windows is proposed (for example, Patent Document 1). Further, a plasma processing apparatus in which a plurality of large-sized substrates are subjected to uniform plasma treatment is proposed (for example, Patent Document 2). Further, in a device having a plurality of antennas and a plurality of microwave introduction windows, a microwave plasma processing apparatus capable of supplying microwaves of different electric power for each antenna has also been proposed (for example, Patent Document 3).

S -6-201215250 Further, in order to efficiently perform a plurality of processing projects, a plurality of processing chambers divided by the partition walls are provided in the processing container, and a plurality of substrates for mounting the plurality of substrates are rotatably provided below the processing chamber. A processing device for setting the table is also proposed (for example, Patent Document 4). Further, in the plasma processing apparatus of the slot antenna type, an antenna module constituting a plurality of phases which can change the phase of the microwave by the core tuner is used as a plasma processing apparatus for a mechanism for introducing microwaves into the processing container. Proposal (for example, Patent Document 5). CITATION LIST Patent Literature Patent Literature 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The plasma is produced independently. However, if the position where the plasma is generated and the arrangement of the object to be processed are fixed, the plasma density may be high or low due to the distance between adjacent plasmas or the degree of plasma diffusion. The problem of uniformizing the processing in the surface of the object to be processed 201215250 The object of the present invention is to easily control the distribution of the plasma density in the plasma processing apparatus in which a plurality of plasmas are generated in the processing container. The desired processing is achieved in-plane. The plasma processing apparatus of the present invention includes: a vacuum-processable processing container that forms a processing space for processing the object to be processed; a supporting device that supports the object to be processed in the processing container; and an electromagnetic wave generating device Generating electromagnetic waves for generating plasma in the processing container; a plurality of electromagnetic wave introducing units for introducing electromagnetic waves generated by the electromagnetic wave generating device into the processing container; and driving means for The center of the support device serves as a center of rotation, and a plurality of objects to be processed supported by the support device and/or the plurality of electromagnetic wave introduction units are rotated to cause a wraparound motion. The electromagnetic wave introduction unit has an electromagnetic wave introduction window, and the electromagnetic wave is introduced. The window system is provided to face the processing space, and electromagnetic waves are transmitted and introduced into the processing container. The supporting device has a mounting table on which a plurality of objects to be processed are placed, and a plurality of processed systems placed on the mounting table Relatively moving the electromagnetic wave introduction window to each of the processed bodies By introducing at least one of said electromagnetic waves through a window constituting the embodiment of the location area. Further, the plasma processing apparatus of the present invention may be configured such that one of the objects to be processed passes through the opposing positions at least partially in sequence with respect to the two or more electromagnetic wave introduction windows between the relative movements.

Further, the plasma processing apparatus according to the present invention may be configured such that at least one of the objects to be processed simultaneously passes through the opposing position with respect to two or more electromagnetic wave introduction windows between the relative movements. Composition. Further, in the plasma processing apparatus of the present invention, the plurality of electromagnetic wave introduction windows are temporally accumulated 电 and/or plasma irradiation of the plasma density of the plasma generated by the electromagnetic waves introduced from the respective electromagnetic wave introduction windows. The accumulation of time is configured in the same way regardless of the position of a processed object. Further, the plasma processing apparatus of the present invention may further include an auxiliary electromagnetic wave introducing unit that has an electromagnetic wave introducing window provided at a position deviated from the opposing position with respect to the track of the object to be moved relatively. Further, the plasma processing apparatus of the present invention may further include a plurality of electromagnetic wave introducing units having different areas of the electromagnetic wave introducing windows. Further, in the plasma processing apparatus of the present invention, the electromagnetic wave generating device may be provided separately in accordance with the electromagnetic wave introducing unit. Further, in the plasma processing apparatus of the present invention, the power of the electromagnetic waves supplied to the plurality of electromagnetic wave introducing units can be individually set. Further, in the plasma processing apparatus of the present invention, the electromagnetic wave power introduced from the electromagnetic wave introduction window located inside the position close to the rotation center and the electromagnetic wave introduction from the outer side of the outer radius of the electromagnetic wave introduction window on the inner side are introduced. The power of the electromagnetic waves introduced by the windows is different. In the plasma processing method of the present invention, the plasma processing apparatus is used to introduce electromagnetic waves into the processing container through the plurality of electromagnetic wave introduction windows to generate plasma, and the processed object is at least 201215250 in the processing container. The temporal accumulation of the plasma density at the position on the object to be processed while the object to be processed is relatively moved to the electromagnetic wave introduction window by the opposite direction of the electromagnetic wave transmission region of the electromagnetic wave introduction window And/or the cumulative enthalpy of the plasma irradiation time is formed in the same manner for plasma treatment, the plasma processing apparatus comprising: a vacuumable processing container that forms a processing space for processing the object to be processed; The electromagnetic wave generating device is configured to generate electromagnetic waves for generating plasma in the processing container, and a plurality of electromagnetic wave introducing units to be generated in the electromagnetic wave generating device. Electromagnetic waves are introduced into the processing container; and the drive device is The center of the support device serves as a center of rotation, and a plurality of objects to be processed supported by the support device and/or the plurality of electromagnetic wave introduction units are rotated to cause a wraparound motion. The electromagnetic wave introduction unit has an electromagnetic wave introduction window, and the electromagnetic wave is introduced. The window system is provided to face the processing space, and electromagnetic waves are transmitted and introduced into the processing container. The supporting device has a mounting table on which a plurality of objects to be processed are placed. According to the present invention, the object to be processed placed on the supporting device is relatively movable so as to pass through at least the opposing position of the electromagnetic wave transmitting region of the electromagnetic wave introducing window. Moreover, regardless of the position on the object to be processed, the temporal accumulation of the plasma density and/or the fatigue of the plasma irradiation time

S -10- 201215250 The electromagnetic wave introduction window is configured in the same way, and the uniformity of processing in the in-plane of the borrowing body is improved. Moreover, even if the line, or changing the process conditions, the processing capacity can be independently controlled. Therefore, the plasma can be distributed in the treatment vessel in a desired distribution. In addition, even when the shape of the object to be processed is increased, the area of the magnetic wave introduction window of the plurality of electromagnetic wave introduction means, the power of the supplied electromagnetic wave, and the like can be adjusted in the processing container. Plasma distribution. [Embodiment] Hereinafter, the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view schematically showing a configuration example of an electric device 100 according to an embodiment of the present invention. 2A and 2B are views showing the appearance of the mounting table of the supporting device of the slurry processing apparatus 100. 3 is a schematic diagram of the microwave introducing unit of the plasma processing apparatus 100, 4A, 4B, and 4C showing the plasma processing apparatus used in Fig. 1. : Plan view of the antenna. Fig. 5 is a bottom plan view showing the lower surface of the plasma treatment top wall 1c of Fig. 1. The main structure of the plasma processing apparatus 100 includes: a processing container 1 which is airtight; and a supporting transport apparatus 2 which is a semiconductor wafer (hereinafter referred to as "wafer") W of the processing body in the processing container 1; The gas introduction unit 15 introduces a gas into the processing container exhausting device 24 for maintaining the large arrangement or electrification of the processing container in the processing container 1 so that the plasma in the replaced planar device can be stably maintained. A simple embodiment of the slurry processing apparatus is used for an electro-optical image. Figure Composition diagram. The support of the flat device 100 of FIG. 1 is taken as the location 1; the decompression row -11 - 201215250 gas is applied; the plurality of microwave introduction units 27 are provided at the upper portion of the processing container 1 and are used to generate plasma. The microwave is introduced into the processing container 1; the waveguide 37 is connected to the microwave introducing unit 27 at one end; the microwave generating device 39 is connected to the other end of the waveguide to generate microwaves; and the control unit 50 It is used as a control means for controlling each component of the plasma processing apparatus 100. Further, the microwave introducing unit 27, the waveguide 37, and the microwave generating device 39 constitute a plasma generating means for generating plasma of the processing gas in the processing container 1. The processing container 1 is a bottom wall 1a, a side wall 1b, and a top wall 1c which are made of a material such as aluminum. The support device 2 has a mounting table 3, a support portion 4, and a drive device 5. The stage 3 is a wafer W horizontally supporting a plurality of sheets inside the processing container 1. The mounting table 3 is made of a material having a high thermal conductivity such as a ceramic material such as A1N. This mounting table 3 is supported by a cylindrical support portion 4 that extends from the center of the bottom wall 1a of the processing container 1 to the upper side. Further, the mounting table 3 is, for example, a mounting region Sr in which a plurality of places (5 in Fig. 2A) are placed on the wafer W as shown in Fig. 2A. Further, the mounting table 3 is configured to be rotatable by the driving device 5' coupled to the support portion 4 with the support portion 4 as a rotation axis (center). In the present embodiment, the plurality of mounting regions SR are arranged concentrically around the rotation axis of the mounting table 3. Therefore, by the rotation of the mounting table 3, five placements

S -12- 201215250 The area SR is a wraparound motion (revolution) on the same circumference centered on the rotation axis of the support portion 4. Further, the mounting table 3 does not have to be a single body, and may be divided into a plurality of pieces according to the number of wafers W placed thereon. For example, Fig. 2B shows a modification of the mounting table in which five pedestals 8 supported by the five support portions 7 are provided by the drive unit 5 to form the rotatable common table portion 6. The five support portions 7 and the pedestal 8 are circumferentially moved (revolved) on the same circumference centered on the rotation axis of the table portion 6. In this configuration example, the configuration of the support device includes the table portion 6, the support portion 7, the pedestal 8, and the drive device 5. Further, the mounting table 3 is provided with a heating or cooling mechanism (not shown), and the temperature of the crystal W can be controlled to, for example, a range of 25 ° C (room temperature) to 900 ° C. Further, the mounting table 3 is provided with a wafer supporting pin (not shown) for supporting the wafer W to be lifted and lowered. Each of the wafer support pins is provided so as to protrude from the surface of the mounting table 3. A gas introduction portion 15 is provided at the center of the top wall lc of the processing container 1. The gas introduction portion 15 is a nozzle 16 having a cylindrical shape, and a gas hole 16a is formed on the lower surface thereof. This gas introduction portion 15 is connected to the pipe 17. The gas supply device 18 is configured to include a gas supply source 18a and a pipe 17 connected to the gas supply source 18a. In Fig. 1, a gas supply source 18a and a pipe 17 are shown, but a plurality of gas supply sources 18a and pipes 17 can be provided in accordance with the type of gas. The gas supply source 18a is, for example, a processing gas such as a rare gas such as Ar, Kr, Xe, or He for plasma generation, an oxidizing gas such as an oxidized oxygen gas, or a nitriding gas. In addition, in the CVD process, it is possible to form a raw material gas for supplying -13 to 201215250, a purge gas such as N2 and Ar for use in the environment of the replacement processing container, and C1F3, NF3, etc. when used in the washing processing container 1. Washing gas. The mass flow controller (not shown) and the on-off valve are provided in the middle of the piping 17 that connects the gas supply source 18a to the gas introduction unit 15, and the switching of the supplied gas or the flow rate and the like can be controlled. Further, the gas supply device 18 may be a part of the composition of the plasma processing apparatus 1 or an external device. Further, the side wall 1b of the processing container 1 is provided with a carry-out port 19 for carrying in and out of the wafer W between the plasma processing apparatus 1 and an adjacent transfer chamber (not shown), and opening and closing the carry-out port 19 Gate valve 20. At the plurality of bottom walls la of the processing container 1 (2 in Fig. 1), an exhaust port 11 is formed. Here, the exhaust port Π is connected to the exhaust pipe 12, and is connected to the exhaust device 24 via the exhaust pipe 12. FIG. 1 is an exhaust port 1 at the bottom wall 1a, and is connected to the exhaust device 24, respectively. . The exhaust device 24 is, for example, an APC valve and a turbo molecular pump as a high-speed vacuum pump. As described above, the exhaust device 24 is connected to the exhaust port 11 via the exhaust pipe 12. By operating the exhaust unit 24, the gas in the processing container 1 is exhausted to the outside through the exhaust port 11 and the exhaust pipe 12. Thereby, the inside of the processing container 1 can be decompressed at a high speed to, for example, 〇.133Pa. Next, a mechanism for introducing microwaves into the processing container 1 will be described with reference to Figs. 3 to 5 . The plasma processing apparatus 100 is configured such that microwaves generated by the plurality of microwave generating devices 39 are supplied to the processing chamber 1 via the microwave introducing unit 27, respectively. The microwave generating device 39 and the microwave introducing unit 27 are connected by a waveguide 37, respectively.

S -14- 201215250 First, the microwave introducing unit 27 as an electromagnetic wave introducing unit will be described. The main configuration of the microwave introducing unit 27 is to include a transmitting plate 28 and a planar antenna 31. The transmission plate 28, which is an electromagnetic wave introduction window for transmitting microwaves, is provided on the support portion 13a, and the support portion 13a is formed on the top wall lc. In the transmission plate 28, a portion of the processing container 1 facing the support portion 13a forms a microwave transmission region as an electromagnetic wave transmission region. The transmission plate 28 is made of a dielectric material such as quartz, Al2〇3, A1N or the like. The space between the transmission plate 28 and the support portion 13a is hermetically sealed via the sealing member 29. Therefore, each of the transmission plates 28 is an opening that blocks the top wall 1c, respectively, and maintains the airtightness in the processing container 1. The planar antenna 31 is disposed above the transmission plate 28 so as to face the mounting area SR of the mounting table 3. The planar antenna 31 has a disk shape. Further, the shape of the planar antenna 31 is not limited to a disk shape, and may be, for example, a square plate shape. The planar antenna 31 is composed of, for example, a copper plate or an aluminum plate whose surface is plated with gold or silver. The planar antenna 31 is a plurality of slit-shaped microwave radiation holes 32 having radiated microwaves. The microwave radiation holes 32 are formed by penetrating the planar antenna 31 in a predetermined pattern. Each of the microwave radiation holes 32 has an elongated rectangular shape (slit shape) as shown, for example, in Fig. 4A. Further, the shape of the microwave radiation holes 32 may be other shapes such as a circular shape or an arc shape. Further, the arrangement of the microwave radiation holes 32 is not particularly limited. For example, as shown in FIG. 4B, the curved plurality of elongated microwave radiation holes 32 are arranged in a circular shape, or the elongated microwave radiation holes 32 can be arranged as shown in FIG. 4C. Radially extending from the center -15-201215250 of the planar antenna 3 1 . The lower end of the waveguide 37 is connected above the planar antenna 31. On the other end side of the waveguide 37, a microwave generating device 39 that generates microwaves is connected via a matching circuit 38. The microwave generating device 39 as the electromagnetic wave generating means generates microwaves of a predetermined frequency. The frequency of the microwave is ideal, for example, 2.45 GHz, and other frequencies of 800 MHz to 1 GHz (more preferably 800 MHz to 915 MHz), 8.35 GHz, and 1.98 GHz may be used. The waveguide 37 is a circular waveguide 37a having a circular cross section extending upward from the planar antenna 31, and an upper end portion connected to the upper end portion of the circular waveguide 37a via the mode converter 40 extending in the horizontal direction Rectangular waveguide 37b. The mode converter 40 has a function of converting microwaves propagating in the rectangular waveguide 37b in the TE mode into the TM mode. With such a configuration, the microwave propagates through the planar waveguide 31 via the circular waveguide 37a having an inner conductor (not shown). With the above configuration, the microwave generated by the microwave generating device 39 can be transmitted to the planar antenna 31 of the microwave introducing unit 27 via the waveguide 37, and introduced into the processing container 1 via the microwave transmitting region of the transmitting plate 28. Further, in the plasma processing apparatus 1 of the present embodiment, the mechanism for introducing the microwave into the processing container 1 is not limited to the configuration shown in Fig. 3 . For example, it is also possible to use the microwave introduction mechanism disclosed in Patent Document 5. In the present embodiment, a plurality of microwave introduction units 27 are provided. Figure 5 is a bottom plan view of the top wall lc as seen from the inside of the processing container 1. in

S-16-201215250 A total of 20 transmissive plates 28 are depicted in FIG. That is, in the plasma processing apparatus 100 of the present state, a total of 20 microwave guides 27 are provided. In the embodiment illustrated in Fig. 5, each of the microwave introduction units 27 is the same. The area of the transmission plate 28 is also equal. The following description explains the arrangement of the microwave introduction unit 27 by the position of the board 28. The transmission plate 28 as the electromagnetic wave introduction window is not limited to a circular shape, and is formed into other shapes such as a rectangle. As shown in Fig. 5, five transmissive plates 28 concentrically arranged so as to surround the center 〇 of the top wall 1 c (the same position as the rotational axis of the mounting table 3) are arranged in a quadruple direction in the radial direction of the top wall lc. The diameter direction of the table 3). First, the first week of the innermost circumference is composed of five of 28A1, 28B1, 28C1, 28D1, and 28E1. The second week from the inside is constituted by five of the transparent plates 2 8A2 , 2 8B2 , 2 8D2 , and 2 8E2 . Similarly, from the inside, it is passed through the transmission plates 28A3, 28B3, 28C3, 28D3, and 28E3. Then, the fourth week of the outermost circumference is constituted by five of the transmission plates 28A4, 28C4, 28D4, and 28E4. Here, the transmission plate 28A4 is a group of plasmas for processing one wafer W. Similarly, the transmission plates 28B1 to 28B4, the transmission plates 28C1 to 28B1 to 28D4, and the transmission plates 28E1 to 28E4 are also used. Grouped separately. This point will be further described with reference to FIG. Fig. 6 is a plan view showing the plan view of the mounting table 3 in the same manner as Fig. 5. As described above, the mounting table 3 is provided with the mounting area SR placed at five places. The mounting table 3 is configured such that the drive unit 5 is driven into the unit. Alternatively, it may be arranged here (the transmission plate is placed next, and 28C2' is a structure 28B4, 28 A1 〜: 1 28C4, the constituent group is rotated by the plate wafer W, and is rotated (rotated) in the direction indicated by the arrow in Fig. 6 in -17-201215250. Therefore, each of the mounting areas SR is centered on the rotating shaft of the mounting table 3 The direction is around (revolution). Here, for example, the group of the transmissive plates 28A1 to 28A4 is arranged in order from the innermost transmissive plate 28A1 to the outermost transmissive plate 28A4 in the circumferential direction of the placement area SR. In addition, the transmissive plates 28A1 to 28A4 are arranged such that at least some of the transmissive plates 28A1 to 28A4 are vertically overlapped with each other regardless of which of the mounting regions SR. The wafer W of the region SR is relatively moved to the transmissive plates 28A1 to 28A4, and constitutes an opposite position through at least one of the transmissive plates 28A1 to 28A4. In the present embodiment, the wafer W is transmissive. Board 28A1~28A4 The movement is configured to pass through all of the opposing positions of the microwave transmission regions of the transmission plates 28A1 to 28A4. Here, the "opposing position" means that the area of the microwave transmission region of the transmission plates 28A1 to 2 8 A4 is directed toward the mounting table 3. When the vertical projection is not performed, the projection area is at least partially overlapped with the placement area SR (or the wafer W placed thereon), and the transmission plates 28A1 to 28A4 are disposed on the wafer W. At which position, the cumulative time 电 of the plasma density and/or the cumulative 値 of the plasma irradiation time will be the same. With such a configuration, the transmission plates 28A1 to 28A4 are sequentially shifted in part or in whole and the mounting area SR Similarly, the respective groups of the transmission plates 28B1 to 28B4, the transmission plates 28C1 to 28C4, the transmission plates 28D1 to 28D4, and the transmission plates 28E1 to 28E4 are also arranged in an arc shape, and the staggered time is sequentially arranged in part or all. The experience overlaps with the placement area SR.

S -18-201215250 By arranging the plurality of transmissive plates 28 in this manner, the time-accumulation of the plasma irradiation of each portion of the wafer W after the predetermined number of rotations of the mounting table 3 is formed in the same manner, and can be formed between the plurality of wafers W And plasma treatment is performed substantially uniformly in the plane of the wafer W. That is, the irradiation time for generating the plasma acting on the wafer W from the microwaves radiated from the microwave transmitting region of the transmitting plate 28 is the result of forming the time average of the wafer W at which portion of the surface is substantially equal. Further, in the processing container 1, since the plasma generated directly under the microwave transmitting region of the transmitting plate 28 is diffused, the plasma reaching the surface of the wafer W has a microwave transmitting region larger than the transmitting plate 28. Larger area (horizontal sectional area). The area of the plasma diffusion region also varies depending on the distance from the surface of the transmission plate 28 to the surface of the wafer W (gap LG). Such a plasma diffusion can be considered to determine the configuration of the transmission plate 28. Further, it is understood that it is equally feasible to surround the transmissive plate 28 instead of rotating the mounting table 3 so as to surround the mounting area SR. In other words, as long as the microwave introducing unit 27 and the mounting region SR are relatively moved in the reverse direction, either one can be moved or both can be moved. Each component of the plasma processing apparatus 1 is configured to be connected to the control unit 150. The control unit 50 is a computer. For example, as shown in Fig. 7, the control unit 50 includes a controller 51 having a CPU, a user interface 52 connected to the controller 51, and a memory unit 53. The controller 51 is configured to control various components (for example, the drive unit 5, the gas supply unit 18, the exhaust unit 24, and the microwave) in the plasma processing apparatus 1 to control process conditions such as gas flow rate, pressure, and microwave output. Control means for generating device 39, etc.). -19-201215250 The user interface 52 has a keyboard for inputting an instruction or the like for the management of the plasma device 100, and a display for visually displaying the operation state of the plasma device 100. Further, the memorandum portion 53 holds a prescription for recording a control program (software), a processing condition, and the like, and the control program (software) is for realizing various types of plasma processing apparatus 1 to be executed under the control of the process control. Processing, and then, according to the instruction from the user interface 52, an arbitrary prescription is called from the memory unit 53, so that the process controller is executed in the container 1 of the plasma processing apparatus 100 under the control of the process controller 51. Perform the desired processing. Further, the prescriptions of the control program, the device data, and the like can be used in the state of the memory 54 readable by the computer, or can be used by other devices, for example, via a dedicated line. The computer readable memory medium 5 4 can be, for example, a ROM, a hard disk, an SSD, a floppy disk, a flash memory, a DVD, a Blu-ray, or the like. Next, an example of a procedure for plasma treatment using the plasma processing apparatus of the present embodiment will be described. Here, an example is given in which a gas containing a nitrogen-containing gas is used to treat the surface of the wafer by plasma nitriding. For example, the command is input from the user interface 52, and the plasma nitriding process can be performed at the plasma place 100. The controller 51 accepts this command to issue a prescription stored in the storage unit 53 or the recording medium 54. Then, in a manner of performing plasma nitriding treatment under the conditions of the prescription, each of the terminal devices from the device 51 to the plasma processing apparatus 1 such as a driving device, a gas supply device 18, an exhaust device 24, and a microwave generating device 39 Processing is in the record § 51. Etc., 51, processing the management of the media, when the CD-CD 100 is used as the first, the dressing, reading to control, etc.

S -20- 201215250 Control signal. Then, the gate valve 20 is opened, and, for example, a plurality of wafers W are sequentially loaded into the processing container 1 from the carry-out port 19, and placed on the mounting area SR of the mounting table 3. Then, the drive unit 5 is driven to rotate the mounting table 3 to stabilize the rotation speed of the mounting unit 3. Next, the exhaust unit 24 is operated to decompress the inside of the processing container 1 while exhausting the gas from the gas supply unit. 18 The rare gas and the nitrogen-containing gas are introduced into the processing container 1 through the gas introduction unit 15 at a predetermined flow rate. Further, the amount of exhaust gas and the amount of gas supplied are adjusted to adjust the inside of the processing container 1 to a predetermined pressure. Next, the power of each of the microwave generating devices 39 is turned on (input) to generate microwaves. Then, microwaves of a predetermined frequency, for example, 2.45 GHz, are guided from the respective microwave generating devices 39 to the waveguide 37 via the matching circuit 38, and sequentially supplied to the planar antenna through the rectangular waveguide 37b and the circular waveguide 37a. Board 31. The microwave is propagated in the TE mode in the rectangular waveguide 37b, and the TE mode microwave is converted into the TM mode in the mode converter 40, and the planar antenna plate 31 of the microwave introduction unit 27 is formed in the circular waveguide 37a. Spread away. The microwave is radiated from the microwave radiation hole 32 penetrating through the hole formed in the planar antenna plate 31 to the space above the wafer W in the processing container 1 via the transmission plate 28. In this manner, microwaves are introduced into the processing container 1 from the respective microwave introduction units 27, respectively. In the present embodiment, for example, the microwave introduction unit 27 is disposed at 20, and an electromagnetic field is formed in the processing container 1 by the microwave introduced into the processing container 1 via each of the microwave introduction units 27, for example, it is introduced into the processing container 1 not - 21 - 201215250 The reactive gas and the nitrogen-containing gas are plasmad. The plasma to be used by the microwave is formed by microwaves from the microwave radiation holes 32 of the planar antenna plate 31, for example, to a high density of l〇1 ()/cm3 to 1013/cm3, and a low electron temperature of approximately 2 eV or less on the wafer. Plasma. The plasma thus formed is less damaged by plasma caused by ions or the like of the underlying film. However, the surface of the tantalum nitride is formed by the action of an active species such as a radical or an ion in the plasma to form a thin film of the tantalum nitride film SiN. Further, an oxygen-containing gas can be used as the nitrogen gas to carry out oxidation treatment of the ruthenium, and film formation by a plasma CVD method can be carried out by using a film-forming material gas. Once the control for discharging the plasma treatment is sent by the controller 51, the power of each microwave generating device 39 is turned off (cut off). The supply of the process gas from the gas supply device 18 is stopped, and the inside of the device is evacuated. Then, the rotation of the mounting table 3 is stopped, and the wafer W is sequentially carried out from the inside of the space 1, and the same processing of the wafer W of the plurality of sheets is completed. Figs. 8A and 8B are linearly showing the trajectories of the transmissive plates 28A1 to 28A4 of the wave introducing unit 27 of Figs. 5 and 6 in the opposite direction to the wafer W. In Figs. 8A and 8B, 'L1 is the interval between the transmissive plates 28Α1 to 28Α4 in the direction orthogonal to the direction in which the crystal β is relatively orthogonal (the direction in which the relative movement direction is the direction in which the circular rail is orthogonal to the wiring direction). The distance between the centers of the microwaves of the plates 28Α1 to 28Α4). Further, Μ indicates the distance D from the center of the innermost transmissive plate to the center of the outermost transmissive plate 28Α4 D The diameter of the wafer W. Also, the arrow in the figure is placed on the mount i

The excited radiation, after the high density near W, is replaced by the wafer w and can also be signaled. Secondly, when the processing container is treated with the micro-moving surface W of the plasma, the adjacent region: 28A1 is expressed as [ Domain SR

In the moving direction of the transmissive plates 28A1 to 28A4, the wafer W of the fixed position of S-22-201215250 is linearly displayed in the circumferential direction shown in Fig. 6 in consideration of the arc arrangement of the transmissive plates 28A1 to 28A4. First, the center of the innermost transmissive plate 28A1 and the center of the microwave transmitting region of the outermost transmissive plate 28A4 are arranged to avoid temporal accumulation of the plasma density at the end positions P 1 and P 3 of the wafer W. The lowering of the other portions (for example, the central position P2 of the wafer W) is preferably the same or wider than the diameter D of the wafer W. That is, the relationship of M2D is established as ideal. In Fig. 8A, it is substantially M = D, and in Fig. 88, M > D, the arrangement of the transmission plates 28A to 28A4 is preferable to Fig. 8B. Further, by sufficiently taking the arrangement intervals of the relative movement directions of the transmission plates 28A1 to 28A4 (the circumferential direction in the case of the circular orbit), the wafer W can be sequentially passed through the direction of the microwave transmission region of the transmission plates 28A1 to 28A4. position. Conversely, by narrowing the arrangement interval of the transmission plates 28 A1 to 28 A4 in the relative movement direction, the microwave transmission regions of the two or more transmission plates of the transmission plates 28A1 to 28 A4 may be relatively moved with the wafer W. At the same time, they overlap each other. Further, the interval between the directions in which the relative movement directions of the transmission plates 28A1 to 28A4 disposed adjacent to each other in the relative movement direction are orthogonal to each other (the direction in which the direction of movement is a circular orbit, the direction orthogonal to the direction of the connection) is set to be adjacent There is no time-dependent reduction in the plasma density between the plates. In other words, if the interval L i is too small or too large, even if the diffusion of the plasma is considered, there is a large mountain portion and a small valley portion in which the plasma density is generated, and the uniformity of the treatment in the plane of the wafer W is lowered. Case. In contrast, in Fig. 8A, P1 passes only directly below the microwave transmission region -23-201215250 of the transmission plate 28A1, and P3 passes directly under the microwave transmission region of the transmission plate 28A4, and P2 passes through the transmission plate. Both the 28A2 and the transparent plate 28A3 are directly under the microwave transmission region. Therefore, P2 has more plasma irradiation time than PI and P3. When the plasma density of the transmission plates 28A1 to 28A4 is uniform, P2 is, for example, in the nitriding treatment, the nitrogen doping amount or the nitride film thickness is larger than PI and P3. Therefore, in PI, P2, and P3, the size or interval L of the transmission plates 28A1 to 28A4 and the minimum of the surface from the transmission plates 28 A to 28D are adjusted in the same manner as the temporal accumulation of the plasma density. The distance (gap LG), the microwave power of each microwave introduction unit 27, and the like. Further, in any position on the wafer W, the cumulative time of plasma irradiation is formed in the same manner, and a plasma source (transmission plate) is disposed, whereby a more uniform process can be performed. In the same manner as in Fig. 8A or Fig. 8B, the result of superimposing the temporal accumulation of the plasma density when the four transmission plates 28A1 to 28A4 (diameter: 109 mm) are arranged at predetermined intervals is simulated. The shortest distance (gap LG) from the respective transmission plates 28A1 to 28A4 to the surface of the wafer W was set to 89 mm. The diameter D of the wafer W is set to 300 mm. The vertical axis of Figs. 9 to 14 is the average 値 indicating the temporal accumulation 値 of the electron density (plasma density) by the passage time, and the horizontal axis is the distance indicating the direction perpendicular to the moving direction of the wafer W. Further, the horizontal axis of Figs. 9 to 14 is a large and small (diameter) in which the wafer W is overlapped and displayed. First, Figure 9 is 1^ = 90111111 (1^ = 270111111), M<D. As shown in Fig. 9, in the direction orthogonal to the relative movement direction of the wafer W and the transmission plate (when the relative movement direction is a circular orbit, it means that the wiring direction is positive

S -24- 201215250 The direction of the handover. In the comparison between the central portion of the wafer W and the plasma density at the end portion, the central portion is high and the end portion is lowered, and the whole is formed into a mountain shape. On the other hand, Fig. 10 is Ι^ = 120ιηιη(Μ = 360ιηιη), M>D. As shown in Fig. 1A, the sum of the plasma densities of the central portion and the end portion of the wafer W in the direction orthogonal to the direction of movement is substantially uniform. Similarly to the case of Fig. 9, the plasma density of the transmission plates 28A1 and 28A4 disposed at both ends is lowered outward. However, a drop occurs in a portion deviating from the width D of the wafer W, and a substantially uniform plasma density is maintained in the plane of the wafer W. Fig. 11 to Fig. 13 are shown at Li = 120 mm (M = 360 mm), M> In the setting of D, the microwave power introduced from the microwave transmission regions of the transmission plates 28A1 to 28A4 (that is, the corresponding microwave introduction units 27) is changed. Fig. 11 shows that the microwave power introduced from the transmissive plates 28A1 and 28A4 disposed outside is set to 1 000 W, and the microwave power introduced from the two transmissive plates 28 A2 and 28 A3 disposed inside is set to 600 W. Happening. The total 电 of the plasma density is lowered in the central portion of the wafer W in the direction orthogonal to the relative movement direction, and the end portion is high. Fig. 12 shows a case where the microwave power introduced from the transmissive plates 28A1 and 28A4 disposed outside is 1000 W, and the microwave power guided from the two transmissive plates 28A2 and 28A3 disposed inside is set to 1 300 W. The total 电 of the plasma density is increased in the central portion of the wafer W in the direction orthogonal to the relative movement direction, and becomes lower at the end portion. Fig. 13 shows a case where the introduced microwave power is set to 400 W, 600 W, 800 W, and 1000 W in the order of the transmission plates 28A1' 28A2' 28A3, 28A4. The total density of the plasma density is higher on one end side (the side of the transmission plate 28A4) of the wafer W in the direction orthogonal to the direction of movement of -25 to 201215250, and is lowered on the multi-end side (the side of the transmission plate 28A1) to generate a direction. tilt. Fig. 14 is a view showing a state in which the microwave power introduced from the microwave transmission regions of the transmission plates 28A1 to 28A4 is changed under the setting of Li = 90 mm (M = 270 mm) and M < D. FIG. 14 shows that the microwave powers introduced from the transmissive plates 28A1 and 28A4 disposed outside are set to be larger, and the microwave powers to be introduced from the two transmissive plates 28A2 and 28A3 disposed inside are set. Smaller 700W. However, since M < D, the decrease in the plasma density of the end portion of the wafer W in the direction orthogonal to the relative moving direction is not improved. From the above simulation results, it was confirmed that in order to uniformize the density of the plasma reaching the surface of the wafer W and to achieve uniform processing, it is preferable that the relationship of M2D is established. The above description is as shown in FIG. 8A and FIG. 8B. When the wafer W is in a linear motion, when the wafer W is in the revolving motion, the speeds of the positions P1 and P3 on the wafer W are different, and the side far from the revolution axis is different. The P3 of the (outer side) is faster than the P1 of the near side (inner side). Therefore, it is necessary to increase the density of the plasma on the outer side as shown in Fig. 13, so that the temporal accumulation of the plasma density is uniform. As described above, the plasma processing apparatus 1A of the present embodiment includes a plurality of mounting regions SR on which the wafer W is placed, and at least one wafer W placed on the plurality of mounting regions SR is passed through at least one The microwave introduction unit 27 is formed to be relatively movable in such a manner as to oppose the position of the microwave transmission region of the transmission plate 28. Then, regardless of the position on the crystal II W, the plasma is dense

S -26- 201215250 degrees of time accumulation / and / or accumulation of plasma irradiation time are formed in the same way to configure the plasma source (transmission plate), so that uniform processing can be performed. Therefore, the uniformity of the processing in the wafer W of the plurality of wafers and the wafer W in one wafer can be improved. Further, even if the planar antenna 31 is replaced or the process conditions are changed, the plasma distribution in the processing container 1 can be independently controlled. Therefore, the plasma can be stably maintained in the processing container 1 with a desired distribution. Further, even when the processing container 1 is enlarged in accordance with the enlargement of the wafer W, it is possible to easily adjust the plasma distribution generated in the processing container 1 by changing the number or arrangement of the microwave introducing units 27. Next, the arrangement of the microwave introducing unit 27 will be described with reference to Figs. 15 to 24, to name a few. Here, the configuration of the microwave introduction unit 27 is also shown in accordance with the transmission plate. 15 to 24 are views showing the arrangement of the transmission plate 28 on the plan view of the mounting table 3. Further, in the example shown below, three or five placement areas SR are depicted, but the number of placement areas SR may be arbitrary. Fig. 15 is a view showing an example in which a total of twelve transparent plates are arranged four times in a concentric manner at a position facing the surrounding track of the mounting region SR in the top wall lc. First, the first week of the innermost circumference is constituted by three of the transmission plates 1 1 1 A 1 , 1 1 1 B 1 , and 1 1 1 C 1 . Next, the second week from the inside is constituted by three of the transmission plates 111A2, 111B2, and 111C2. Similarly, the third week from the inside is constituted by three of the transmission plates 111A3, 111B3, and 111C3. Then, the fourth week of the outermost circumference is constituted by three of the transmission plates 111A4, 111B4, and 111C4. The transmission plates 111A1 to 111A4 are formed by a group of -27-201215250 points for plasma treatment of one wafer W. Similarly, the transmission plates 111B1 to 1ΠΒ4 and the transmission plates 1 1 1 C 1 to 1 1 1 C4 also constitutes a group. The transmission plates 1 1 1 A 1 to 111A4 , the transmission plates 111B1 to 111B4 , and the transmission plates 111C1 to 111C4 of each group are sequentially curved from the inside to the outside and sequentially arranged in the circumferential direction of the placement area SR indicated by the arrow. Arranged. Further, the transmission plates 111A1 to 111A4, the transmission plates 111B1 to 111B4, and the transmission plates 111C1 to 111C4 of the respective groups are arranged in the width direction of the placement region SR (the radial direction of the surrounding circular orbit). By such an arrangement, a part or the whole of the plurality of transmissive plates can be arranged in a vertically overlapping manner with respect to the placement area SR. The basic idea of the arrangement shown in Fig. 15 is the same as that of Figs. 5 and 6, but in Fig. 15, the number of groups is less than that of Figs. 5 and 6. In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible. Further, the number of the transparent plates can be set according to the size of the processing container 1, the number of the mounting regions SR (or wafers W), the rotational speed of the mounting table 3, and the contents of the processing (for example, oxidation, nitridation, film formation, Etching, etc., etc. are set as appropriate. 16 is a view showing a transparent plate 112A1, 111B1, and 111C1 which are disposed on the innermost circumference of FIG. 15, and a large-area transmission plate 112 is disposed, and the top wall lc is concentric with the circumferential track of the mounting region 811. An example of a total of 10 transmission plates of the transmission plates 113A1, 113A2, 113A3, 113B1, 113B2, 113B3, 113C1, 113C2, and 113C3 of three groups and three groups is arranged in a circular shape. First, in the center of the top wall 1C, there is a transmissive plate than the surrounding

S -28- 201215250 113A1 to 113A3, 113B1 to 113B3, 113C1 to 113C3 are further transmitted through the board 112. Around the transmission plate 112, three of the three passes of the transmission plates 113A1, 113B1, and 113C1 from the inside are formed by the transmission plates 113A3 and 113B3 by the three sections 113A2, 113B2, and 113C2. The three transmission plates 113A1 to 113A3 of the 113C3 are grouped by the viewpoint of performing electric paddle processing on the wafer W of the group of the transmission plates 112, and the same plates 113B1 to 113B3 and the transmission plates 113C1 to 113C3 are also divided. The group is formed in combination with the transmissive plate 112. The transmission plate 112 and the transmission plates 113A1 to 113A3 and the transmission plates 113B1 to 113B3 and 113C1 to 113C3 are arranged in an arc-like manner from the inside to the outside in the circumferential direction of the arrow placement area SR. Further, each of the group plates 113A1 to 113A3, the transmission plates 113B1 to 113B3, and the transmission plates 11 to 11C3 are arranged in the width direction (the radial direction of the ring track) of the placement region SR. By such an arrangement, the microwave transmissive regions of the plurality of transmissive plates or the entire array can be sequentially arranged to overlap each other in the Sr shift time. In this case, the inner side (the axis side) of the surrounding placement area SR (or the wafer W) is which position on the unwound track often overlaps directly below the micro area of the transmission plate 112. Therefore, the plasma density of the mounting region SR (or the inner side of the wafer (the rotating shaft side) can be made higher than the outer side. Fig. 17 is an example in which the number of the transparent reflecting plates of the respective transparent plates of Fig. 16 is omitted. Further, in Fig. 7, the three regions SR are depicted, but the number of the placement regions SR may be arbitrary. First, one week of the large diameter is the first, third, and third configurations. The movement of a part of the circular area through the 1 1 3C 1 shown by the plate is transmitted through the W), and the large diameter is placed in the center of the top wall -29-201215250 1C. Through the board 114. The periphery of the transmission plate 114 is at a position facing the surrounding track of the mounting region Sr, and three of the transmission plates 115A1, 115B1, and 115C1 are provided on the first circumference from the inside, and the transmission plate 1 15A2 is provided on the second circumference. 3 of 15B2 and 1 15C2, and a total of seven transmissive plates are provided. The transmissive plates 115A1 and 115A2 are grouped by a plasma treatment of one wafer W by a combination with the transmissive plate 114. Similarly, the transmissive plates 115B1 and 115B2 and the transmissive plates 115C1 and I15C2 are respectively borrowed. The group is formed by a combination with the transmissive plate 1 1 4 . The transmission plate 1 1 4 and the transmission plates Π5Α1 and 115A2 of the respective groups, the transmission plates 115B1 and 115B2, and the transmission plates 1 15C1 and 1 15C2 are respectively curved outwardly from the inside to the outside of the placement area SR indicated by the arrow. The directions are arranged in order. Further, the transmission plates 115A1 and 115A2 and the transmission plates 115B1 and 115B2 and the transmission plates 1 15C1 and 1 15C2 of the respective groups are arranged in the width direction (the radial direction of the circular orbit) of the placement region SR. By such an arrangement, a part or the whole of the microwave transmission regions of the plurality of transmission plates can be arranged in a vertically overlapping manner with respect to the placement area SR. In this example, the mounting area SR of the surrounding motion or the inner side (the rotating shaft side) of the wafer W often overlaps directly below the microwave transmitting area of the transmitting plate 114 regardless of the position on the surrounding track. Therefore, the plasma density of the inner side (rotation side) of the mounting region SR or the wafer W can be made higher than the outer side. Fig. 18 is a view showing an example in which a total of 16 transparent plates are arranged concentrically at a position facing the surrounding track of the mounting region SR in the top wall 1c. First, the first week of the innermost circumference is constituted by three of the transmission plates 116A1, 16B1, and 16C1. Second, the second week from the inside

S -30- 201215250 is constituted by three of the transmission plates 116A2, 116B2, and 116C2. The third week from the inside is constituted by four of the transmission plates 116A3, 116B3, 116C3, and 116D. Then, the fourth week of the outermost circumference is constituted by the six layers of the transmission plates 1 16A4 '116B4, 116C4, 116E, 116F, and 16G, so that the number of the transmission plates on the outer side (the outer circumference of the mounting table 3) is higher than the top. The center side of the wall 1 c is also set more. By such an arrangement, a part or the whole of the microwave transmission regions of the plurality of transmission plates can be arranged in a vertically overlapping manner with respect to the placement area SR. Further, by arranging the number of the transparent plates on the outer side (outer circumference of the mounting table 3) more than the center side of the top wall 1c, it is possible to easily increase the mounting area Sr (or wafer W) in which the surrounding speed is increased. The outer plasma density. In this case, the plasma source (transmission plate) can be configured in the same manner regardless of the position on the wafer W, the cumulative time of the plasma density, and/or the cumulative time of the plasma irradiation time. Uniform processing. Fig. 19 shows an example in which a total of ten transparent plates are arranged four times in a concentric manner at a position facing the surrounding track of the mounting region SR in the top wall 1C. First, the first week of the innermost circumference is constituted by two of the transmission plates 117A and 11 7B. Next, the second week from the inside is formed by passing through two of the plates 11 8A and 11 8B. The third week from the inside is constituted by two of the transmission plates 119A and 119B. Then, the fourth week of the outermost circumference is constituted by four of the transmission plates 120A, 120B, 120C, and 120D. Further, the area of the transmission plate from the first week to the fourth week is changed, and the first week and the fourth week are the same size, the second week is larger than the first week, and the third week is larger than the second week. . In this way, it is possible to combine the transmissive plates with different areas to match -31 - 201215250. According to such an arrangement, a part or the whole of the microwave transmission regions of the plurality of transmission plates can be arranged in a vertically overlapping manner with respect to the placement region sR. In this way, the plasma source (transmission plate) is disposed such that the position of the plasma density and/or the cumulative time of the plasma irradiation time are the same regardless of the position on the wafer W, thereby achieving uniformity. Processing. FIG. 20 is a transmissive plate in which the total length of four of four weeks is concentrically placed on the top wall lc at a position facing the surrounding track of the mounting area SR, not the entire top wall lc, but is offset to a part. A configuration example. That is, the first week of the innermost circumference is constituted by two of the transmission plates 121A and 121B. Next, the second week from the inside is constituted by three of the transmission plates 122A, 122B, and 122C. The third week from the inside is constituted by four of the transmission plates 123A, 123B, 123C, and 123D. Then, the fourth week of the outermost circumference is constituted by five of the transmission plates 124A, 124B, 124C, 124D, and 124E. By moving the transmissive plate and the placement region SR (or the wafer W) relative to each other, it is not necessary to provide the transmissive plate in the entire region of the top wall lc. Therefore, as shown in Fig. 20, the transmissive plate can be partially biased. In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible. Further, in the top wall U, a region where the transmission plate is not provided (toward the right half of the paper surface of Fig. 20) can be used for other purposes such as a film thickness measuring device or a gas supply device. Fig. 21 is a view showing an example in which a total of nine elliptical transmissive plates are disposed in a position facing the surrounding track of the mounting region SR in the top wall lc.

S -32 - 201215250 That is, the first week of the innermost circumference is constituted by three of the transmission plates 125A, 125B, and 125C. Next, the second week from the inside is constituted by three of the transmission plates 126A, 126B, and 126C. The third week from the inside is constituted by three of the transmission plates 127A, 127B, and 127C. The angles in the longitudinal direction of the transmission plates 125A to 125C, 126A to 126C, and 127A to 127C are arbitrary, and may not necessarily be arranged concentrically at the center. As described above, the shape of the transmission plate is not necessarily limited to a circular shape, and may be any shape of a polygonal shape such as a quadrangle or a rectangle, in addition to an elliptical shape. In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible.

Fig. 22 is a view showing an example of a configuration in which a total of six transparent plates are arranged three times in a concentric manner at a position facing the surrounding track of the mounting region SR in the top wall lc. That is, the first week of the innermost circumference is constituted by two of the transmission plates 128A and 128B. Next, the second week from the inside is constituted by two of the transmission plates 129A and 129B. The outermost circumference, that is, the third week from the inner side, is composed of two of the transmission plates 130A and 130B. In this example, the transmission plates 129A and 12 9B of the second week constitute a larger area than the transmission plates 128A and 1280 of the first week and the transmission plates 130A and 130B of the third circumference. Specifically, the transmission plates 12 9A and 129B are formed to have a larger area than the placement region SR (or the wafer W), and the entire formation region SR (or wafer W) is superposed on the transmission plates 12 9A and 129B. Just below. Therefore, from the viewpoint of the uniformity of the processing in the in-plane of the wafer W, the transmissive plates 12 9A and 129B are the main plasma generating portions, and the first reflecting plates 128A - 33 - 201215250 , 128B , and the third week The transmission plates 130A and 130B are auxiliary plasma generating units that supplement the transmission plates 12 9A and 129B. In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible. In Fig. 22, each of the microwave transmission regions having the transmission plates 128A and 128B and the transmission plates 130A and 130B having the functions of the auxiliary plasma generating portion and the rails of the placement region SR (or wafer W) are partially overlapped. However, considering the diffusion of the plasma, it may be located at a position away from the track of the mounting area SR (or the wafer W). An example of this is shown in FIG. Fig. 23 shows an example of a configuration in which a total of six transparent plates are arranged three times concentrically at a position facing the surrounding track of the mounting region SR in the top wall lc. That is, the first week of the innermost circumference is constituted by two of the transmission plates 131A and 131B. Next, the second week from the inside is constituted by two of the plates 132A and 132B. The outermost circumference, that is, from the inner side, is formed by the two transmission plates 133A and 133B. The transmission plates 132A and 132B of the second week are larger in area than the transmission plates 131 A and 131B of the first week and the transmission plates 133A and 133B of the third circumference. Specifically, the transmissive plates 13 2A and 13 2B are formed to have a larger area than the mounting region SR (or the wafer W), and most of the mounting region SR (or the wafer W) is superposed on the transmissive plate 13 2A. Directly below 132B. Therefore, from the viewpoint of the uniformity of the processing in the in-plane of the wafer W, the plasma generating portions mainly including the transmitting plates 13 2A and 132B, the transmitting plates 131A and 131B of the first week, and the transmitting plates 133A of the third week. 133B is supplementary to the auxiliary plate 132A, 132B

S -34- 201215250 Plasma generation department. In FIG. 23, the transmission plates 133A and 133B having the function as the auxiliary plasma generating portion are not partially overlapped with the track of the placement region SR (or the wafer W), but the microwaves are transmitted through the transmission plates 133A and 133B. The plasma generated immediately below the transmission region is diffused and spread over the wafer W, so that the plasma generated by the microwaves introduced from the microwave transmission regions of the transmission plates 132A and 132B can be obtained. The effect. In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible. Fig. 24 is a view showing an example of a configuration in which a large-area and small-area transmission plate is combined as in Fig. 22; In other words, in the top wall lc, two large-area transmission plates 135A and 135B are arranged concentrically at positions facing the surrounding track of the mounting region 811, and four and four concentrically arranged. Through the board. The first week of the innermost area of the small-area transmission plate is the permeation plate 134A, and the second week from the inside is the permeation plate 134B, and the third week from the inside is the permeation plate 134C, and the outermost circumference is the inner side. 4 weeks is made up of the transmission plate 134D. In this case, the large-area transmission plates 135A and 135B are formed in a rectangular shape in accordance with the shape of the waveguide 37. Specifically, the transmissive plates 135A and 135B are formed to have a larger area than the mounting region SR (or the wafer W), and are disposed directly below the transmissive plates 135A and 135B by the mounting region SR (or wafer W). Relatively moving, all of them are formed to pass directly under the microwave transmitting region of the transmitting plates 135A, 135B. Therefore, from the viewpoint of the uniformity of the processing in the in-plane of the wafer W, the transmissive plates 135A and 135B are the main plasma-35-201215250 generating portion, the first reflecting plate 134A, and the second reflecting plate. 134B, the transmission plate 134C of the third week, and the 13 4D of the fourth week are auxiliary plasma generating units that supplement the transmission plates 135A and 135B. In addition, in FIG. 24, the transmission plates 134A, 134B, 134C, and 134D having the function as the auxiliary plasma generating portion partially overlap the track of the mounting region SR (or the wafer W), but as shown in the figure. As an example of 23, in consideration of the diffusion of the plasma, the transmission plates 134A, 134B, 134C, and 134D may be provided at positions deviated from the trajectory of the mounting region SR (or the wafer W). In this case, the plasma source (transmission plate) is configured in the same manner by which the cumulative time of the plasma density and/or the cumulative time of the plasma irradiation time are formed regardless of the position on the wafer W. Uniform processing is possible. As shown in FIGS. 5, 6, and 15 to 24, when the mounting region SR (or the wafer W) is moved around, the portion on the inner peripheral side of the rotating shaft is placed in the mounting region SR (or the wafer W). The moving speed will be slower, and the moving speed will be faster on the outer peripheral side. Therefore, as illustrated in Fig. 18, more of the transmissive plate is disposed on the outer portion of the top wall 1c than the inner portion of the top wall 1c, and it is also effective to easily increase the outer circumference of the mounting region SR having a fast moving speed. Part of the plasma density. Further, the area of the transmissive plate of the outer portion is enlarged more than the inner portion of the top wall lc, and the plasma density of the outer peripheral portion of the mounting region SR having a high moving speed is also effectively improved. Further, the introduction of the microwave power from the transmissive plate disposed at the outer portion of the top wall lc is made larger than that of the transmissive plate disposed on the inner portion, and the plasma density of the outer peripheral portion of the mounting region SR having a high moving speed is effectively increased. . Further, as shown in Figs. 22 and 23, the transmission plate serving as the auxiliary plasma generating portion is disposed on the top wall.

The outer portion of the S-36-201215250 1C also effectively increases the plasma density of the outer peripheral portion of the mounting area SR where the moving speed is fast. Further, by arranging the plasma source (transmission plate) at any position on the wafer W, the temporal accumulation of the plasma density and/or the accumulation of the plasma irradiation time are all the same, and uniformity can be performed. Processing. Next, the configuration of the gas supply unit and the exhaust unit of the processing container 1 will be described with reference to Figs. 25 to 30 . In the plasma processing apparatus 100, a plurality of microwave introducing units 27 are disposed in the top wall 1C. Therefore, the microwave introducing unit is provided over the entire processing space as compared with the conventional one, and the degree of freedom in the arrangement of the gas introduction portions is high. The gas introduction portion 15 may be provided at any position other than the portion where the ceiling wall lc is provided with the microwave introduction unit 27. Fig. 25 is a view schematically showing the flow of the inside of the processing container 1 of the plasma processing apparatus 100. Further, in Fig. 25, the exhaust device 24 is provided with an APC valve (APC) and a turbo molecular pump (TMP). FIG. 26 is a view schematically showing the positional relationship between the airflow in the processing container 1 and the mounting table 3, the mounting region SR, the gas introduction portion 15, and the exhaust port 11 in the configuration of the gas introduction portion 15 similar to that of FIG. . In Fig. 26, the gas introduction portion 15 is disposed at the center of the top wall lc, and one air hole 16 is provided at the center of the gas introduction portion 15. Further, in Fig. 26, 'the exhaust port 11' is provided annularly below the mounting table 3, so that the gas ejected from the air hole 16 is equally distributed in the processing container 1 as indicated by an arrow in the figure. Radial, exhausted from the exhaust port 11. In the meantime, the gas is equally distributed on the surface of the wafer w placed on the mounting region Sr of the rotating mounting table 3, and the processing between the wafers W of a plurality of wafers can be uniformized, and a wafer can be processed. The processing of w-in-37-201215250 is uniform. Fig. 27 is a view showing another configuration example of the gas introduction portion and the exhaust portion. In Fig. 27, the air holes 16a are provided over the entire area of the top wall lc. That is, a plurality of air holes 16a are formed in the entire area of the top wall lc except for the place where the top wall lc is provided with the transmission plate 28 (the plasma introduction unit 27). The gas introduction structure to each of the air holes 16a may be, for example, a gas flow path formed inside the top wall lc or a gas distributor disposed on the upper portion of the top wall lc. Further, in Fig. 27, the exhaust port 11 is provided at the lower portion 4 of the mounting table 3, so that the gas ejected from each of the air holes 16a is evenly distributed in the processing container 1, and is exhausted from each of the exhaust ports 11. In the meantime, the gas is equally distributed to the surface of the wafer W placed on the mounting region SR of the rotating mounting table 3, and the processing between the wafers W of a plurality of wafers can be uniformized, and one wafer can be processed. The processing in the W plane is uniform. Further, by providing the exhaust gas dispersion plate at the exhaust port 11, a more uniform air flow can be obtained. Fig. 28 to Fig. 30 show other examples of the configuration of the gas introduction portion and the exhaust portion. Figs. 28 to 30 show the positional relationship between the airflow in the processing container 1 (not shown here), the mounting table 3, the mounting region SR, the gas introduction portion, and the exhaust port 1 1 in a schematic manner. First, referring to Fig. 28, the gas introduction member 16 is provided as a gas introduction portion which is disposed opposite to the mounting table 3, for example, and has a long shape in the radial direction of the mounting table 3. The gas introduction member 16 is provided with a nozzle for introducing a gas. For example, a plurality of pores 16a are formed in series below the gas introduction member 16. Fig. 28 shows that the two gas introduction members 16 are linearly arranged such that the length direction thereof overlaps the diameter of the mounting table 3.

S - 38 - 201215250 Further, the gas introduction member 16 is disposed at a position directly below the microwave introduction unit 27 . The longitudinal direction of the gas introduction member 16 is orthogonal to the direction in which the wafer W revolving in the circular orbit (i.e., the wiring direction of the circular track). The gas is ejected linearly from the plurality of pores 16a of the gas introduction member 16 toward the wafer W (not shown) placed on the placement region SR of the mounting table 3. The gas reaches the upper surface of the mounting table 3 and is branched in the two directions, and is disposed to the exhaust port 11 below the outer peripheral portion of the mounting table 3, respectively. In this form, the exhaust port 11 is provided at a position offset from the arrangement position of the pair of gas introduction members 16 by approximately 90 in the circumferential direction of the mounting table 3. In this way, the gas is supplied linearly from the long gas introduction member 16, and the flow is divided into two directions directly above the rotating mounting table 3, and the reaction species or the reaction product are uniformly (rotation (revolution) integration).値) Between the wafers W of the plurality of sheets placed in the respective placement regions SR, the processing between the wafers W can be uniformized, and the processing in the wafer W surface can be uniformized. The arrangement position or number of the gas introduction members 16 may be various changes in addition to the example of Fig. 28. For example, Fig. 29 is a view showing an example of a configuration in which three groups (total of six) of gas introduction members paired in the longitudinal direction are disposed. In other words, the gas introduction members 16A, 16A are arranged linearly so as to overlap the diameter of the mounting table 3 in the longitudinal direction. Similarly, the gas introduction members 16B and 16B and the gas introduction members 16C and 16C are also arranged linearly so as to overlap the diameter of the mounting table 3 in the longitudinal direction. The configuration of each gas introduction member 16 is the same as that of Fig. 28 . The arrangement angles of the gas introduction members 16A, 16A and the gas introduction members 16B, 16B, -39 - 201215250, and the angles of arrangement of the gas introduction members 16A, 16A and the gas introduction members 16C, 16C are arbitrary, respectively. For example, the gas introduction members 16B and 16B and the gas introduction members 16C and 16C may be disposed at an angle of 45° with respect to the gas introduction members 16A and 16A. By arranging the gas introduction member 16 at a plurality of positions on the top wall lc of the processing container 1 to supply the gas, the reaction species or the reaction product can be equally distributed (integral enthalpy of rotation (revolution)) to each of the mounting regions. Further, between the wafers W of the plurality of SRK-mounted wafers, the processing between the wafers W can be uniformized, and the processing in the wafer W surface can be uniformized. In addition, the number of the gas introduction members 16 can be increased more than that of Fig. 29. Further, in the configuration example of Fig. 29, for example, the type of gas introduced through the gas introduction members 16A, 16A and the type of gas introduced through the gas introduction members 16B, 16B and the gas introduction members 16C, 16C can be changed. For example, the gas introduction members 16A and 16A are introduced into a gas which generates a short-lived active species or a gas which generates a reaction species which adversely affects the process once it is stored in the plasma, in addition to other gases. In this case, the residence time in the processing container 1 can be shortened, so that it is possible to efficiently use a gas which generates a short-lived active species, or to suppress the generation of a reaction species which adversely affects the process once it is stored in the plasma. Further, the types of gases introduced from the gas introduction members 16A, 16B, and 16C may be different types. Fig. 30 is a view showing another configuration example of the gas introduction portion and the exhaust portion. The example of Fig. 30 is a gas introduction member 16D having a curved bow shape as a gas introduction portion. Further, the exhaust port 11A also has a shape curved into a bow shape.

S-40-201215250 This configuration example is an exhaust gas disposed at a lower portion of the processing container 1 which is disposed obliquely downward from the position of the gas introduction member 16D provided on the upper portion of the processing container 1 at a position therebetween. The port 11A forms a gas flow in a substantially one direction. In other words, when the gas ejected from the air vent 16a of the gas introduction member 16D to the one end side of the lower stage 3 reaches the surface of the mounting table 3, the flow direction is changed in a direction parallel to the surface as indicated by an arrow in FIG. The direction from the opposite side of the mounting table 3 is further downward and directed toward the exhaust port 11A. In the meantime, the gas is uniformly distributed to the surface of the wafer W placed on the mounting region SR of the rotating mounting table 3, whereby the reaction species or the reaction product are equal (rotation (revolution) integral 値The processing is performed between the wafers W of the plurality of sheets placed in the respective mounting regions SR, and the processing between the wafers W is uniformized, and the processing in the wafer w plane of one wafer is uniformized. Further, when the configuration in which the gas introduction portion 15 is disposed in the vicinity of the center of the top wall lc (for example, FIG. 26) is compared, the configuration of FIG. 30 is such that a flow in one direction is formed in the vicinity of the surface of the wafer W in the processing container 1. Therefore, there is an advantage that gas can be uniformly supplied to the inside (rotation center side) of the wafer W placed on the mounting area SR or the outside of the wafer W. Further, in Fig. 30, the gas introduction member 16D and the exhaust port 11A are provided along the inner surface (not shown) of the circular processing container 1. As described above, the gas introduction unit and the exhaust unit of the plasma processing apparatus can be configured according to the size of the processing container 1, the arrangement of the microwave introduction unit 27, the area of the transmission plate 28, and the placement area SR (or the wafer W). The number of sheets, the rotation speed of the mounting table 3, the contents of the processing, and the like (for example, oxidation, nitridation, film formation, etching, etc.) are appropriately set. Further, in addition to the relative movement of the wafer-41 - 201215250 W to the plurality of microwave introduction units 27, the gas introduction portion and the exhaust portion as shown in Figs. 25 to 30 are used, whereby the rotation can be performed. The surface of the wafer W placed on the mounting area SR of the stage 3 is uniformly distributed with gas. Further, by combining with the configuration of the gas introduction portion and the exhaust portion, the temporal accumulation of the plasma density and/or the accumulation of the plasma irradiation time are the same regardless of the position on the wafer W. The plasma source (transmission plate) is configured in a manner to perform uniform processing. Therefore, it is possible to uniformize the processing between the crystal wafers of the plurality of wafers and to uniformize the processing in the wafer W surface of one wafer. Next, experimental materials for confirming the effects of the present invention will be described. First, the configuration of the plasma processing apparatus used in the trade inspection will be described. [Experiment 1] As shown in Fig. 31, a plasma processing apparatus for transmitting the transmission plates 28X, 28Y, 28Z having a circular microwave transmission region having a diameter of 90 mm was linearly arranged on the top wall lc. That is, a microwave introduction unit is provided at each of the transmission plates 28X, 28Y, and 28Z. Hereinafter, the transmission plate 28X is described as "the first plasma source 28Xj, the transmission plate 28Y is referred to as the "second plasma source 28Y", and the transmission plate 28Z is referred to as the "third plasma source 28Z". This experiment is based on the center of the first plasma source 28X (zero), and the distance to the center of the second plasma source 28Y and the distance to the center of the third plasma source 28Z are set to 175 mm, respectively. Further, the purpose of this experiment was to evaluate the uniformity of the treatment, and therefore, a wafer w of a width of 300 mm was assumed to be evaluated as a processed object.

S -42 - 201215250 The following conditions were used to generate plasma, and the plasma density was measured at a position below the 49 mm from the top plate 1C. <plasma generation condition>

Ar gas flow rate; l〇〇〇mL/min (see) N2 gas flow rate; 200mL/min (see) treatment pressure; 20Pa stage temperature; room temperature (25 °C) microwave power;

The first plasma source 28X...260W, the second plasma source 28Y...260W, the third plasma source 28Z...260W, Fig. 32 shows the first plasma source 28X and the second plasma source 28Y, A graph of the plasma density at the time of operation of each of the microwave introduction units of the third plasma source 28Z and the plasma density at the time of simultaneous operation. The vertical axis of Fig. 32 indicates the plasma density, and the horizontal axis indicates the distance from the center of the first plasma source 28X which serves as a reference. Further, in Fig. 32, the width of the wafer W is indicated by a dotted line (the same applies to Figs. 33 to 35). As can be seen from Fig. 32, in the individual operation of the microwave introduction units of the first plasma source 28X, the second plasma source 28Y, or the third plasma source 28Z, the 'plasma density is taken as the vicinity of the center of each of the transmission plates. The apex is in the shape of a mountain. However, when the microwave introduction unit of the first plasma source 28X, the second plasma source 28Y, and the third plasma source 28Z are simultaneously operated, it is confirmed that the entire area in the width direction of the wafer W is substantially constant (about 1). The plasma density of xl〇11/cm3) is -43-201215250. In Fig. 32, the "synthesis (calculation)" is the calculation of the total of the first plasma source 28X and the second plasma source 28Y. The plasma density of the single plasma source 28Z operating alone is almost identical to the result of "synthesis (measured)". [Experiment 2] Fig. 33 shows the results of the same conditions as in Experimental Example 1, except that the microwave power of the microwave introduction unit of the first plasma source 28X was changed to l 〇〇 W, 260 W' or 500 W. The symbols of A' B and C in the graph are microwave powers of 100 W, 260 W, and 500 W, respectively, of the microwave introduction unit of the first plasma source 28X. In addition, when the microwave power of the microwave introduction unit of the first plasma source 28X is 260 W (B) is a re-disclosure of Experimental Example 1 as shown in FIG. 33, the third portion of the three is added or subtracted. 1 The microwave power of the microwave introduction unit of the plasma source 28X confirms that the plasma density changes in the radial direction of the wafer W by a convex (C; 500 W) or a downward convex (A; 100 W). Thereby, it can be confirmed that when a plurality of microwave introducing units are disposed, the intensity distribution of the plasma density to be synthesized can be controlled by changing the microwave power of each microwave introducing unit. [Experiment 3] The ruthenium substrate of the wafer W was subjected to a gambling nitriding treatment under the following conditions, and the film thickness of the ruthenium nitride film was measured. Further, the distance (gap) from the top plate 1 c to the wafer W was set to 85 mm.

S -44 - 201215250 <plasma nitriding treatment conditions>

Ar gas flow rate; 1000 mL/min (sccm) N2 gas flow rate; 200 mL/min (see)

Processing pressure; temperature of 20 Pa mounting table; microwave power of 500 ° C; only the microwave power of the microwave introducing unit of the first plasma source 28X is changed to l 〇〇 W, 260 W, or 500 W. The power configuration of each plasma source is as follows. A; 28Y, 28X, 28Z = 260W > 100W, 260W B; 28Y, 28X, 28Z = 260W, 260W « 260W C ; 28Y , 28X , 28Z=260W , 500W , 260W processing time ; Figure 34. The vertical axis of Fig. 34 indicates the optical film thickness (refractive index 2.0) of the tantalum nitride film, and the horizontal axis indicates the distance from the center of the first plasma source 28X which serves as a reference. Further, the meanings of A, B, and C in the graph of Fig. 34 are the same as those of Fig. 33. When the microwave powers of the three microwave introducing units are set to be the same as in Fig. 34 (B), a tantalum nitride film is uniformly formed in the radial direction of the wafer W. In addition, by increasing or decreasing the microwave power of the microwave introduction unit of the first plasma source 28X disposed at the center of the three, it is confirmed that the in-plane thickness of the tantalum nitride film changes in the radial direction of the wafer W. Convex (C; 500W) or convex (A; 100W). As can be seen from Fig. 34, the same tendency as in Fig. 33 was observed. That is, it can be confirmed that the measurement result of the plasma density of FIG. 33 and the measurement result of the film thickness of the tantalum nitride film of FIG. 34 correspond to -45 to 201215250, and Range/2AVE of the index of in-plane uniformity is also That is, (the minimum 氮化 of the nitride film thickness, the minimum 値 of the nitride film thickness) / the average 値X 2 of the nitride film thickness] is 4.2% of A in Fig. 34, 1.3% in B, and 1.9% in C. From the above results, it was confirmed that when a plurality of microwave introducing units are disposed, the film thickness of the tantalum nitride film can be controlled in the plane of the wafer W by changing the microwave power of each microwave introducing unit. [Experiment 4] The ruthenium substrate as the wafer W was subjected to plasma nitriding treatment in the same manner as in Experiment 3 except that the microwave power of the microwave introduction units of the respective plasma sources 28X, 28Y, and 28Z was changed. <plasma nitriding treatment conditions> The power configuration of each plasma source is as follows. D; 28Y, 28X, 28Z=100W > 100W, 100W E; 28Y > 28X, 28Z = 260W, 260W, 260W F; 28Y, 28X, 28Z = 400W, 400W, 400W Other conditions are the same as in Experiment 3. The results are shown in Figure 35. The vertical axis of Fig. 35 indicates the optical film thickness (refractive index 2.0) of the tantalum nitride film, and the horizontal axis indicates the distance from the center of the first plasma source 28X which is the reference. Further, D' E, F in the graph of Fig. 35 means the above-described plasma nitriding conditions. When the microwave powers of the three microwave introduction units were set to be the same as shown in Fig. 35, it was confirmed that the distribution of the in-plane thickness of the tantalum nitride film of the wafer W according to the size of the power was substantially parallel. and

S -46 - 201215250 Also, Range/2AVE of the in-plane uniformity of the wafer w of the tantalum nitride film [that is, the minimum 氮化 of the nitride film thickness and the minimum thickness of the nitride film) / nitride film The thick average 値x2] is D of Fig. 35 being 1.06°/. , E is 1.2 6 %, F is 0 · 8 5 %, all are good defects. From the above experimental results, it was confirmed that it is easy to control the plasma density by arranging a plurality of transparent plates (microwave introduction means) at predetermined intervals, and the plasma density can be made uniform. Further, in order to prevent the temporal accumulation of the plasma density at the end portion of the wafer W from being lower than the other portions (for example, near the center of the wafer W), the direction orthogonal to the relative movement direction of the wafer W is orthogonal. A plurality of (for example, three or more) plasma sources of the same size (the microwave transmission region of the transmission plate) are disposed at equal intervals, so that the distance 中心 between the centers of the microwave transmission regions of the outermost two transmission plates is the diameter D of the wafer W. Same or wider (Μ 2 D ). With this configuration, it is confirmed that a homogeneous process (e.g., plasma nitridation treatment) can be performed at least in the radial direction of the wafer W. The results of these experiments are consistent with the results of the overlap of the temporal accumulations of simulated plasma densities (Figs. 9 to 14). Further, as a result of the above experiment, the wafer W of a virtual one is a result of the object to be processed. However, it can be easily understood that even when a plurality of small substrates are placed on the mounting table 3 for rotation, the same or better uniformity can be obtained. [Application to the ALD method] As a film formation method for a semiconductor manufacturing process, for example, a method called ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition) (herein, collectively referred to as "aLD method") -47 - 201215250 is known. In the ALD method, after the first reaction gas is adsorbed on the surface of the substrate in a vacuum environment, the supplied gas is switched to the second reaction gas, and the atomic layer or the molecular layer of one or more layers is formed by the reaction of the two gases. . By repeating this cycle a plurality of times, the layers are laminated to form a film on the substrate. In the ALD method, the film thickness can be controlled with high precision in accordance with the number of cycles, and the in-plane uniformity of the film quality is also excellent, which is an effective method for thinning the semiconductor device. Fig. 36 is a view showing a configuration in which the plasma processing apparatus of the present invention is applied to the above ALD method. The film forming apparatus 200 is a flat vacuum container 201 having a flat shape and a large circular shape, and a mounting table 202 provided in the vacuum container 201 and having a center of rotation at the center of the vacuum container 201. The mounting table 202 is fixed to the cylindrical core portion 203 at the center portion, and the core portion 203 is fixed to a rotating shaft (not shown) extending in the vertical direction. The stage 202 and the core 203 are rotatable about a vertical axis (in this case, a clockwise direction). On the surface of the mounting table 202, a circular mounting region Sr for placing the wafer W is provided as a concave portion at a plurality of, for example, five locations along the rotation direction (circumferential direction). Further, for the sake of convenience, in Fig. 36, the wafer W is drawn in only one of the mounting regions SR. The mounting area SR has a diameter slightly larger than the diameter of the wafer W, and its depth is set to be equal to the thickness of the wafer W. A lift pin (not shown) for supporting the back surface of the wafer W to support the wafer W at the bottom of the mounting region SR is provided in the through hole. The inside of the vacuum container 201 is divided into the first region. Rl, 2nd

S -48- 201215250 Zone R2, Zone 3 R3 and Zone 4 R4. The first to fourth regions R1 to R4 are arranged in order from the upstream side to the downstream side in the rotation direction of the mounting table 202 in the first region R1, the second region R2, the third region R3, and the fourth region. In Fig. 36, the boundary portion of each region is indicated by a line (symbol BR), but the boundary of each region may also have a certain width (area formed). The first to fourth regions R1 to R4 are separated by the boundary portion Br. In addition, it is possible to substantially obstruct the environment of each area while rotating the mounting table 202. The means for separating the first to fourth regions R1 to R4, respectively, are omitted in detail, but for example, the first principle can be used in combination with the principle of an air curtain. The boundary portion BR of each of the fourth regions R1 to R4 is introduced into the gas, or the gap between the top surface (not shown) of the vacuum container 201 and the upper surface of the table 202 is formed in a narrow manner. Each of the 1 to 4 regions R1 to R4 is provided with an exhaust port connected to the vacuum pump. The film forming apparatus 200 shown in Fig. 36 is a position facing the passing region of the mounting region SR of the mounting table 202 in the first region R1. A reaction gas nozzle 205A is provided. The first reaction gas nozzle 205A is a gas supply source of DCS (chlorinated gas) gas connected to the first reaction gas (not shown). In the third region R3, a plurality of (for example, four) microwave input units are provided. In Fig. 36, the position of the microwave introducing element is displayed in accordance with the position of the transmitting plate 28. Further, in the third region R3, the second reaction gas nozzle 20 5B is provided at a position opposed to the passage region of the mounting table 202 in the mounting region Sr. The second reaction gas nozzle 205B is a gas supply source (not shown) connected to the NH3 gas of the second reaction body, and the gas flow source (not shown) is disconnected from the first and the first guide. -49-201215250 In the first reaction gas nozzle 205A and the second reaction gas nozzle 205B, the gas discharge holes 206 for discharging the reaction gas toward the lower side are arranged in the longitudinal direction of the nozzle. The first region R1 is a processing region for adsorbing DCS gas on the wafer W, and the third region R3 is a processing region for adsorbing the activated NH 3 gas on the wafer W. For example, the first reaction gas nozzle 205 A and the second reaction gas nozzle 205B are attached to the side wall of the vacuum container 201, and the second region R2 and the fourth region R4 are respectively provided with a purge gas such as N 2 gas. The purge gas nozzles 207 A, 20 7B. The purge gas nozzles 207A, 207B are respectively connected to an N2 gas supply source (not shown). The purge gas nozzles 207A, 207B are, for example, side peripheral walls mounted to the vacuum vessel 201. Although not shown in the drawings, a plurality of exhaust ports are actually provided in the bottom wall of the vacuum container 201, and each of the exhaust ports is connected to an exhaust device such as a vacuum pump via an exhaust pipe. Further, a heating means such as a heater (not shown) is provided between the mounting table 202 and the bottom wall of the vacuum container 201, and the wafer W can be heated to a predetermined temperature via the mounting table 202. Further, a transfer port 208 is formed in the side wall of the vacuum container 201 for transferring the wafer W, which is a substrate between the transfer device (not shown) and the mounting table 202. The transfer port 208 can be omitted from the drawing. The gate valve is opened and closed. The mounting area SR of the mounting table 202 is to transfer the wafer W between the transfer port 208 and the transfer device (not shown). In the film forming apparatus 200, the formation of a tantalum nitride film is performed as follows. First, a gate valve (not shown) is opened, and an external transfer device (not shown) is used.

S - 50 - 201215250 The wafer W is transferred from the transfer port 208 to, for example, the mounting area SR of the mounting table 202 heated to 200 to 400 °C. This transfer is performed by a lift pin (not shown) when the placement area SR is stopped at the position facing the transfer port 208, and the lift pin is passed from the bottom of the vacuum container 201 through the through hole of the bottom surface of the mounting area SR. Side lift. The wafers W are placed in the five mounting regions SR of the mounting table 208 by intermittently rotating the mounting table 202 to carry out the transfer of the wafers W. Then, the gate valve is closed, and the vacuum chamber 201 is evacuated to a predetermined pressure by an exhaust device (not shown), and while the mounting table 202 is rotated clockwise, the wafer is heated by a heater unit (not shown). W. Then, the DCS gas and the NH3 gas are discharged from the first reaction gas nozzle 205 and the second reaction gas nozzle 205B, respectively, and the N2 gas of the purge gas is discharged from the purge gas nozzles 207A and 207B. The wafer W is alternately passed through the first region R1 in which the first reaction gas nozzle 205A and the third region R3 of the plasma generating portion are provided by the rotation of the mounting table 202. Therefore, the DCS gas is adsorbed, and the NH3 gas is activated after the second activation. The adsorbed 'the gas molecules react to form a molecular layer of one or more layers of tantalum nitride. As a result, the molecular layer of tantalum nitride is sequentially laminated to form a tantalum nitride film (SiN film) having a predetermined film thickness. The DCs gas in the first region R1 and the NH3 gas in the third region R3 are exhausted by an exhaust port (not shown) provided in each region. Further, the wafer w sent from the first region R1 can be cleaned in the second region R2' by the rotation of the mounting table 202. In the fourth region R4, the wafer W sent from the third region R3 can be processed. Purification. Further, the second region R2 and the fourth region R4 may be -51 - 201215250, which are used for separating the separation regions of the first region R1 and the third region R3. In this case, the long nozzles having a plurality of pores may be used. N2 gas is released linearly. Thereby, the environment of the first region R1 and the environment of the third region R3 are completely separated, and the process in which the DCS gas and the NH3 gas are not mixed with each other can be performed. In the film forming apparatus 200 of the present embodiment, a plurality of wafers W are arranged in the rotation direction of the mounting table 202, and the mounting table 222 is rotated to sequentially pass the first region R1 and the third region R3 to perform so-called ALD ( Or MLD). In the third region R3, since a plurality of plasma sources are disposed through the plate 28) to generate plasma of NH3 gas, uniform processing can be performed to make the plasma density temporal in any position on the wafer W. The cumulative enthalpy of cumulative enthalpy and/or plasma irradiation time is the same. Therefore, it is possible to uniformize the processing between the wafers W of a plurality of sheets and to uniformize the processing in the wafer W in one sheet. The ALD method is suitable for forming a thin film at a low temperature, for example, a high dielectric film used for a gate insulating film, for example, a tantalum nitride film (SiN film) or a tantalum oxide film (SiO 2 film). In the above description, a film formation example of the nitride film is exemplified. For example, a DCS gas can be used as the first reaction gas, and an oxygen gas or an ozone gas can be used as the second reaction gas to form a film of the tantalum oxide film. Further, as another application example, for example, TiCl4 gas may be used as the first reaction gas, and NH3 gas may be used as the second reaction gas. The TiN film may be formed extremely thin at a low temperature. Further, the distinction between the regions of the film forming apparatus 200 is not limited to four. For example, a Si film may be formed in the first region.

The S-52-201215250 area is subjected to oxidation (nitridation) treatment, and the ruthenium oxide film (矽 nitride film) is subjected to plasma modification treatment in the fifth region. In this case, a plurality of plasma sources (transmission plates 28) may be disposed in either or both of the third region and the fifth region for processing. The embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and various modifications are possible. For example, the plasma processing apparatus of the present invention can be applied to, for example, a plasma oxidation treatment apparatus or a plasma CVD treatment apparatus, a plasma etching treatment apparatus, a plasma ashing treatment apparatus, and the like in addition to the plasma nitriding treatment apparatus. Further, the plasma processing apparatus 100 of the present invention is not limited to the case where the substrate to be processed is a semiconductor wafer, and may be applied to, for example, a substrate for a solar cell panel or a substrate for a flat panel display as a workpiece to be processed. Further, in the above-described embodiment, the microwave introducing means for individually reciprocating the plurality of microwave generating means supplies microwaves. However, it is also possible to configure two or more microwaves from the single microwave generating means by using the branched waveguide. The introduction unit supplies microwaves. Further, in the above embodiment, the microwave plasma processing apparatus is used, but it is also applicable to a plasma processing apparatus using high frequency as electromagnetic waves. Further, for example, a plasma processing apparatus in which a plasma is produced may be used in another manner such as an ICP plasma method, an ECR plasma method, a surface wave plasma method, or a magnetron plasma method. Further, it is not limited to vacuum processing, and atmospheric piezoelectric slurry can also be used. This international application is based on the Japanese Patent Application No. 20 1 0-8 1 987 filed on March 31, 2010. The full content of the application is used for this. -53- 201215250 Brief Description of the Drawings Fig. 1 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus according to an embodiment of the present invention. Fig. 2A is a perspective view showing an external configuration of a mounting table. 2B is a perspective view showing an external configuration of a mounting table of another example. Fig. 3 is a schematic block diagram of a microwave supply unit. 4A is a plan view showing an example of a planar antenna. 4B is a plan view of another example of a planar antenna. 4C is a plan view of another alternative of the planar antenna. Fig. 5 is a bottom plan view showing a top wall of an example of arrangement of the microwave introduction unit. Fig. 6 is a view for explaining the positional relationship between the microwave introduction unit and the mounting area of the mounting table. FIG. 7 is a view showing a configuration example of a control unit. Fig. 8A is a view showing the principle of plasma treatment of a plasma processing apparatus according to an embodiment of the present invention. Fig. 8B is a view for explaining the principle of plasma treatment of the plasma processing apparatus according to the embodiment of the present invention. Fig. 9 is a graph showing simulation results of the relationship between the arrangement of the microwave introduction unit and the electron density. Fig. 10 is a graph showing simulation results of the relationship between the arrangement of the microwave introduction unit and the electron density. Fig. 11 is a graph showing the results of simulation of the relationship between the arrangement of the microwave introduction unit and the electron density. Figure 12 is a diagram showing the relationship between the arrangement of the microwave introduction unit and the electron density.

A graph of the simulation results for S-54- 201215250. Fig. 13 is a graph showing the results of simulation of the arrangement of the microwave introduction unit and the electron density. Fig. 14 is a graph showing simulation results of the relationship between the arrangement of the microwave introduction unit and the electron density. Fig. 15 is a view for explaining an example of arrangement of a microwave introducing unit. Fig. 16 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 17 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 18 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 19 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 20 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 21 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 22 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 23 is a view for explaining another example of arrangement of the microwave introducing unit. Fig. 24 is a view for explaining another example of arrangement of the microwave introducing unit. Figure 25 is a diagram illustrating the flow of air in the processing vessel. FIG. 26 is a view showing an arrangement example of the gas introduction portion. Fig. 27 is a view showing another example of arrangement of the gas introduction portion. Fig. 28 is a view showing another arrangement example of the gas introduction portion and an air flow in the processing container. Fig. 29 is a view showing another example of arrangement of the gas introduction portion. Fig. 30 is a view showing another arrangement example of the gas introduction portion and an air flow in the processing container. Fig. 31 is a view for explaining the arrangement of a transmission plate (-55-201215250 microwave introduction unit) used in the experimental plasma processing apparatus. Fig. 32 is a graph showing the measurement results of the plasma density in Experiment 1. Fig. 33 is a graph showing the measurement results of the plasma density in Experiment 2. Fig. 34 is a graph showing the measurement results of the film thickness of the tantalum nitride film of Experiment 3. Fig. 35 is a graph showing the measurement results of the film thickness of the tantalum nitride film of Experiment 4. Figure 36 is a schematic view showing an ALD film forming apparatus to which the present invention is applicable. [Description of main component symbols] 1 : Processing container 2 : Support device 3 : Mounting table 4 : Support portion 1 1 : Exhaust port 15 : Gas introduction portion 1 8 : Gas supply device 24 : Exhaust device 27 : Microwave introduction unit 2 8: Transmitting plate 3 7 : Waveguide 39: Microwave generating device 5 〇: Control unit

S -56- 201215250 100 : Plasma processing unit W: Semiconductor wafer (substrate) S R : Mounting area -57

Claims (1)

201215250 VII. Patent application scope: 1. A plasma processing device, which is a smear preparation: a vacuum-processable processing container, which forms a processing space for processing a processed object; the support device is attached to the processing container to be processed An electromagnetic wave generating device that generates electromagnetic waves for generating plasma in the processing container, and a plurality of electromagnetic wave introducing units that introduce electromagnetic waves generated by the electromagnetic wave generating device into the processing container; And a driving device that rotates a plurality of objects to be processed supported by the supporting device and/or the plurality of electromagnetic wave introducing units supported by the center of the supporting device to cause a wraparound motion, and the electromagnetic wave introducing unit has The electromagnetic wave introduction window is provided to face the processing space, and electromagnetic waves are transmitted and introduced into the processing container, and the supporting device has a mounting table on which a plurality of objects to be processed are placed, and is placed on the loading table. Placing a plurality of processed systems for the above electromagnetic waveguide Window movement relative to the respective object to be processed by the at least one of said electromagnetic wave introduced through the window area of positions constituting the embodiment. 2. The plasma processing apparatus according to claim 1, wherein between the relative movements, one of the objects to be processed passes through the opposing positions at least partially in sequence with respect to the two or more electromagnetic wave introduction windows. Way composition. 3. The plasma processing apparatus according to claim 1, wherein, between the relative movements of S-58-201215250, at least one of the objects to be processed simultaneously passes at least partially on the electromagnetic wave introduction window of the two or more electromagnetic waves. The way to the position. 4. The plasma processing apparatus according to claim 2, wherein the plurality of electromagnetic wave introduction windows have temporal properties of plasma density of plasma generated by electromagnetic waves introduced from respective electromagnetic wave introduction windows. The cumulative enthalpy and/or the cumulative time of the plasma irradiation time are configured in the same manner regardless of the position of a treated object. 5. The plasma processing apparatus of claim 1 is more auxiliary. The electromagnetic wave introduction unit has an electromagnetic wave introduction window provided at a position deviated from the opposite position with respect to the track of the object to be moved that moves relatively. 6. The plasma processing apparatus according to claim 1, wherein the plurality of electromagnetic wave introducing units have different areas of the electromagnetic wave introducing windows. 7. The plasma processing apparatus according to claim 1, wherein the electromagnetic wave generating device is individually provided corresponding to the electromagnetic wave introducing unit. 8. The plasma processing apparatus according to claim 1, wherein the power of the electromagnetic waves supplied to the plurality of electromagnetic wave introducing units can be individually set. 9. The plasma processing apparatus according to claim 1, wherein The power of the electromagnetic wave introduced from the electromagnetic wave introduction window located inside the position close to the rotation center is introduced from the electromagnetic wave introduction window on the outer side of the radius of the ring-59-201215250 from the electromagnetic wave introduction window on the inner side. The power of electromagnetic waves is different. 10. A plasma processing method, wherein a plasma processing apparatus is used to introduce electromagnetic waves into the processing container through the plurality of electromagnetic wave introduction windows to generate plasma, and at least a processed object in the processing container When the object to be processed moves relative to the electromagnetic wave introduction window by the relative position of the electromagnetic wave introduction window of the electromagnetic wave introduction window, the plasma density is accumulated at any position on the object to be processed. And/or the cumulative enthalpy of the plasma irradiation time is performed in the same manner for plasma treatment, the plasma processing apparatus comprising: a vacuumable processing container that forms a processing space for processing the object to be processed; and a support device The electromagnetic wave generating device is configured to generate electromagnetic waves for generating plasma in the processing container, and a plurality of electromagnetic wave introducing units to be generated in the electromagnetic wave generating device. Electromagnetic waves are introduced into the processing container; and the driving device is above The center of the supporting device serves as a center of rotation, and a plurality of objects to be processed supported by the supporting device and/or the plurality of electromagnetic wave introducing units are rotated to cause a wraparound motion. The electromagnetic wave introducing unit has an electromagnetic wave introducing window, and the electromagnetic wave introducing window The apparatus is provided to face the processing space, and electromagnetic waves are transmitted and introduced into the processing container. S-60-201215250 The supporting device has a mounting table on which a plurality of objects to be processed are placed. C: -61 -