201208496 六、發明說明： 【交互參照之相關申請案】 本申請案主張美國專利臨時申請案61/334,386號之優 先權，其於2〇1〇年5月13曰提出申請，發明名稱為 heater with independent center zone CONTROL」’其全文在此併入做為參考。 【發明所屬之技術領域】 本發明大體上關於基材處理設備之領域。詳言之，本 發明關於控制用於積體電路製造上的基材（諸如半導體 基材）溫度之設備與方法。 【先前技術】 現代化積體電路（1C)含有數百萬的個別元件，其透 過圖案化諸如矽、金屬及/或介電層之材料而形成，該等 材料構成積體電路達僅幾微米之尺寸。許多與積體電路 的製造相關的步驟包括準確地控制1C藉以形成於其上 的半導體基材之溫度。 半導體製造商在此類步驟中面對的一項挑戰是橫越基 材整個表面上均勻地控制基材的溫度。甚至，基材各位 置之間的溫度差都可能造成形成在基材的這些位置上的 一層或多層有物理特性上的非期望差異。 在高溫基材處理中特別有用的一種類型的加熱器是運 201208496 用陶莞基材切件的底座設計。電阻式加熱元件埋在陶 兗基材支撐件的上表面下方’而電阻式加熱器所用的電 子反饋件疋位在底座内，該底座附接於加熱器底部，並 且將基材抬升於基材處理腔室底板上方1 1圖是先前 已知的底座加熱器2之範例’其包括附接中空心柱或底 座6的陶£基材支料4。嵌於陶竟支樓件4内的是灯 電極8與電阻式加熱器1〇。電連接桿匕及^分別提供 料& RF電極8及電阻式加熱$ 1()。_些底座加熱器 亦包括真空線路（圖中未示），其使基材得以透過真空壓 力夾持至底座。 上文所論及之溫度控制的挑戰對底座加熱器（諸如加 熱器2)而言經常呈現：在基材加熱器的中心稍微比加 熱器其他部份冷。這是因為加熱器及RF電極的電連接件 一般是靠近底座中心，提供電阻式加熱元件較少面積（相 較於加熱器其他區域可得者 因此’雖第1圖所示之基材加熱^在許多基材處理操 作上相當實用，但世人仍期望有嶄新的且改善的用於精 確控制基材溫度的基材加熱器與方法。 【發明内容】 本發明一些實施例提供基材加熱器，其包括兩個分別 可控制的加熱系統，該等系統包括第一主要加熱器與第 二輔助加熱器，該第一主要加熱器嵌於基材支撐件的實 201208496 質上平坦的上表面内，而該第二輔助加熱器定位在耦接 該基材支撐件之背表面的中空底座内。該主要加熱器可 例如為電阻式加熱器，其嵌於該基材支撐件内並且以二 維圖案鋪展而覆蓋該基材支撐件的佔地面（f〇〇tprint)。該 辅助加熱器以可操作式耦接該基材支撐件，使得該辅助 加熱器能夠改變該基材支撐件的該上表面的中央區域中 的溫度。 根據本發明一個實施例，提供一種基材加熱器，其包 含一陶瓷基材支撐件，該陶瓷基材支撐件具有一實質平 坦的上表面，以在基材處理期間支撐一基材。電阻式加 熱器嵌在該基材支撐件内，而一加熱器軸桿耦接該基材 支撐件的一背表面。該加熱器軸桿可具有一内部空腔 (cavity)，該内部空腔沿其縱軸延伸並且終止在該基材支 撐件的一底部中央表面。該基材加熱器可進一步包括一 辅助加熱器，該輔助加熱器與該陶瓷基材支撐件分開， 並且定位在該加熱器轴桿的該内部空腔内，與該基材支 撐件的該底部中央表面的一部分熱接觸，使得該輔助加 熱器能夠改變該基材支撐件的該上表面的一中心區域的 溫度。 根據另一實施例的基材加熱器包含一陶瓷基材支撐 件，該陶瓷基材支撐件具有一實質平坦的上表面，以在 基材處理期間支擇電阻式加熱器谈在該基材 支撐件内，並且以一二維圖案鋪展，其適於以一大體上 均勻的方式加熱該基材支撐件的該上表面，而一加熱器 201208496 轴桿搞接及基材支撐件的一背表面。該加熱器軸桿包括 一内部空腔，該内部空腔沿其縱軸延伸並且終止在該基 材支撐件的底部中央表面。一可拆卸的輔助加熱器定 位在該空腔内，而—空氣間隙環繞該輔助加熱器而位於 界疋該工腔的該加熱器軸桿的一内表面與該辅助加熱器 的-外周邊表面之間。—偏壓機構以可操作式_接以推 抵（f_)該輔助加熱器與該基材支撐件的該底部中心 表面之-部份熱接觸，使得該辅助加熱器能夠改變該基 材支撐件的該上表面的一中心區域的溫度。 各種月匕由本發明之該些與其他實施例達成的優點與益 處在下文中與附圖一併描述。 【實施方式】 第2圖是根據本發明實施例的基材加熱器20之簡化截 面圖。加熱器20包括陶瓷（例如AIN、BN、SiC、SiN) 基材支撐件22’其具有RF電極24與電阻式加熱元件％ 嵌於其个’並且伴隨軸桿或底座28。加熱元件％是基 材支撐件的主要熱源，並且可為以二維圖案鋪展電阻式 加熱線圈’加熱元件26位在基材支撑件表面略下方，被 供橫越基材支撑件的整體佔地面上基材支樓表 、體上均勾的加熱。底座28可由與基材支 Μ相同的衫材料製成，其包括㈣空腔3 金屬桿（圖中耒千、π ^ ^ 之 干未不）侍以在空腔30内延伸並且耦接電極 201208496 24及加熱元件26,而提供功率給電極及加熱元件之每一 者。如第2圖所示，基材加熱器2〇亦包括輔助加孰器 其裝配（寧底座28的空腔3〇内，以提供純支 撐件中央區域的額外熱源。輔助加熱器可為任何裝配於 空腔30㈣適合的緊密_源。在—個特別的實施例 中，加熱器40是陶瓷塊（例如氮化鋁），其具有第二電 阻式加熱元件嵌於其卜該第二加熱元件獨立於加熱元 件26受控制。另一實施例中，加熱器4〇包括匿式 (cartridge)加熱器，其滑進經機械加工成加熱器塊的空 腔。 辅助加熱器40裝配於空腔30内，並且比鄰基材支撐 件22的底部表面32於提供加熱器4〇與基材支撐件間良 好的熱接觸的位置。根據本發明之實施例，加熱器4〇是 與基材支樓件22分開的部件，並且不與基材支撐件整合 或黏結。此舉使輔助加熱器在基材處理工具的壽命内可 能需要時彳寸以附接、拆卸及置換。此外，不將這兩個部 件以固定的方式黏結在一起減少或消除了表面3 2與輔 助加熱器40之間的界面處的破裂機會，該破裂是由於加 熱器40與基材支撐件22之間的熱膨脹係數差異相關的 應力所致。本發明一些實施例包括偏壓機構（在第2圖 中未示），其推抵加熱器40使之與基材支撐件熱接觸（如 下文所述），且其亦使得辅助加熱器如需要則得以易於脫 離。 當加熱器20定位在基材處理腔室内時，空腔30與腔 201208496 室的基材處理區域（圖中未示）隔離。大體而言，空腔 3〇處於大氣壓力下，而基材處理區域被抽空至次大氣屋 或接近真空壓力。因此，加熱器4G不暴露至處理腔室内 的環境（其經常具腐錄）。雖然在第2圖中未示，但在 -個特別的實施例巾’加熱器4〇包括四個端子 (terminal)，其運行通過抽桿3〇至基材支撑件，該等端 子包括兩個加熱器端子、RF端子、與熱偶端子。 本發明的實施例容許基材加熱器2〇的中央處溫度控 制的額外裕度，使得定位在表面21上的基材能見得橫越 整體表面的更均句的溫度。如前所提，在沒有此額外溫 度控制的情況下，基材的中央區域可能有時會比周邊區 域冷，進而可能造成非均勻地處理基材。例如，中央冷 的加熱器溫度輪廓將會造成尤其是沉積各sacvd矽氧 化物厚臈或薄膜期間具有較高中央區域的膜沉積。發明 人已確定這項問題部份是由缺乏加熱器線圈於中央處所 引發’其為至加熱器與RF電極的所需端子連接佔去面積 所致。然而，即使加熱元件26的加熱器線圈設計最佳 化，使得橫跨整體基材表面上，特定加熱器以特定溫度 (例如480 C或540 °C)遞送均勻溫度輪廓，A1N的傳 導率仍會隨溫度變化。因此，當加熱器設定點降低，底 座28與基材支撐件22的Ain熱導率增加，因而增加通 過底座的熱損失。甚至中央與周邊之間〇5%的溫度差（例 如，周邊處500°C而中央處497.5〇c)可能造成在膜均 勻性方面無法接受的表現。 201208496 田本發明的實施例以輔助加熱器4〇補償加 '里降’該輔助加熱器40於軸桿28的空腔30内、、的 式轉接基材支撐件22的下表面於界面32處^可操作 例中（顯示於第3圖)，輔 ::實施 材支揮件22的背:::觸或:述者之合金等)’其與基 田、鱼 表接觸。空氣間隙58環繞加熱器塊 側壁/加钕使得加熱器塊不會直接接觸底座軸桿28的 “等㈣5G可透過諸如電阻式加熱器、或®式加 :等適'的機構加熱。熱偶”監視辅助加熱器的溫 2I的Ί力:熱S塊5〇的期望設定點能夠根據基材支撐件 、處的溫度感測器（圖中未示）是否指示基材 、相對於周邊有溫度差異而設定。端桿（例如錄桿） 運行通過陶£管路54與56，以提供功率給嵌人的^電 :與嵌在基材支撐件22内的電阻式加熱元件（皆未示於 3圖中）°如上文所提，基材支撐件22包括—個或多 個有別於熱偶52的其自身的溫度感測器或熱偶（圖中未 丁)其測I基材支撐件在不同位置的溫度’ i且以可操 作式輕接用於電阻式加熱器（例如第2圖中所示之加熱 器26 ’其為對支樓件22的主要熱源）的控制元件。 、第4圖是根據本發明另—實施例的基材加熱器之簡化 透視圖纟中辅助加熱器6〇裝配於空腔内，並且在 空腔内以可操#式耦接於基材支撐#22#下表面。如第 圖所不’加熱器60與軸桿28的内表面透過空氣間隙 58刀開。加熱器60能夠由金屬或陶瓷塊（諸如氮化鋁） 201208496 製成’並且包括裝配在尺寸π阶从… 寸匹配的空腔内的加熱器Ε 6卜熱偶62以類似於前文對熱偶52所述的方某 材支撐件的溫度。線路64a、64b描徂Λ"201208496 VI. Description of the invention: [Related application of cross-reference] This application claims priority from US Patent Provisional Application No. 61/334,386, which is filed on May 13, 2010, entitled "heater with The independent center zone CONTROL" is hereby incorporated by reference in its entirety. TECHNICAL FIELD OF THE INVENTION The present invention generally relates to the field of substrate processing equipment. In particular, the present invention relates to apparatus and methods for controlling the temperature of substrates (such as semiconductor substrates) used in the fabrication of integrated circuits. [Prior Art] The modern integrated circuit (1C) contains millions of individual components formed by patterning materials such as germanium, metal and/or dielectric layers that make up the integrated circuit up to a few microns. size. Many of the steps associated with the fabrication of integrated circuits include accurately controlling the temperature of the semiconductor substrate on which 1C is formed. One of the challenges semiconductor manufacturers face in such steps is to evenly control the temperature of the substrate across the entire surface of the substrate. Even the temperature difference between the substrate locations can cause undesired differences in physical properties of one or more layers formed at these locations on the substrate. One type of heater that is particularly useful in high temperature substrate processing is the design of the base of the 201208496 cut piece with a ceramic base. A resistive heating element is buried beneath the upper surface of the ceramic substrate support member' and an electronic feedback member for the resistive heater is clamped in the base, the base being attached to the bottom of the heater and lifting the substrate to the substrate The top of the processing chamber floor 1 1 is an example of a previously known base heater 2 which includes a base material support 4 to which a hollow column or base 6 is attached. Embedded in the ceramic building 4 is a lamp electrode 8 and a resistive heater 1 〇. The electrical connection rods ^ and ^ respectively provide the material & RF electrode 8 and resistive heating $ 1 (). Some of the base heaters also include a vacuum line (not shown) that allows the substrate to be clamped to the base by vacuum pressure. The challenge of temperature control discussed above often appears for base heaters (such as heater 2): it is slightly cooler at the center of the substrate heater than the rest of the heater. This is because the electrical connections of the heater and the RF electrode are generally close to the center of the base, providing a small area of the resistive heating element (compared to other areas of the heater), although the substrate shown in Figure 1 is heated ^ It is quite practical in many substrate processing operations, but there is still a need in the world for new and improved substrate heaters and methods for precisely controlling substrate temperature. SUMMARY OF THE INVENTION [0007] Some embodiments of the present invention provide substrate heaters, The utility model comprises two respectively controllable heating systems, the system comprising a first main heater and a second auxiliary heater, the first main heater being embedded in the upper flat surface of the solid 201208496 of the substrate support, The second auxiliary heater is positioned in a hollow base coupled to the back surface of the substrate support. The primary heater may be, for example, a resistive heater embedded in the substrate support and in a two-dimensional pattern Spreading to cover the ground support of the substrate support. The auxiliary heater is operatively coupled to the substrate support such that the auxiliary heater can change the substrate support a temperature in a central region of the upper surface of the struts. According to one embodiment of the invention, a substrate heater is provided that includes a ceramic substrate support having a substantially flat upper surface, Supporting a substrate during processing of the substrate. A resistive heater is embedded in the substrate support, and a heater shaft is coupled to a back surface of the substrate support. The heater shaft can have a An internal cavity extending along a longitudinal axis thereof and terminating at a bottom central surface of the substrate support. The substrate heater may further include an auxiliary heater, the auxiliary heater and the ceramic The substrate support is separated and positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the auxiliary heater can change the substrate support a temperature of a central region of the upper surface. The substrate heater according to another embodiment comprises a ceramic substrate support having a substantially flat upper surface to The resistive heater during the processing of the material is discussed in the substrate support and spread in a two-dimensional pattern adapted to heat the upper surface of the substrate support in a substantially uniform manner, while heating The 201208496 shaft is coupled to a back surface of the substrate support. The heater shaft includes an internal cavity extending along a longitudinal axis thereof and terminating at a bottom central surface of the substrate support. a detachable auxiliary heater is positioned in the cavity, and an air gap surrounds the auxiliary heater and is located at an inner surface of the heater shaft bounding the working chamber and an outer peripheral surface of the auxiliary heater The biasing mechanism is operatively coupled to (f_) the auxiliary heater in thermal contact with a portion of the bottom center surface of the substrate support such that the auxiliary heater can change the substrate The temperature of a central region of the upper surface of the support. The advantages and benefits of the present invention with other embodiments are described below in conjunction with the drawings. [Embodiment] Fig. 2 is a simplified cross-sectional view of a substrate heater 20 according to an embodiment of the present invention. Heater 20 includes a ceramic (e.g., AIN, BN, SiC, SiN) substrate support 22' having RF electrodes 24 and resistive heating elements embedded in it' and accompanying the shaft or base 28. The heating element % is the main heat source of the substrate support, and may be a resistive heating coil that is spread in a two-dimensional pattern. The heating element 26 is located slightly below the surface of the substrate support and is placed across the substrate support as a whole. Heating on the upper basement table and on the body. The base 28 can be made of the same material as the base material of the base material, and includes (4) a cavity 3 metal rod (the figure is thousands, π ^ ^ dry), extending in the cavity 30 and coupling the electrode 201208496 24 and heating element 26 provide power to each of the electrodes and the heating elements. As shown in Fig. 2, the substrate heater 2〇 also includes an auxiliary twister assembly (in the cavity 3〇 of the base 28 to provide an additional heat source in the central region of the pure support. The auxiliary heater can be any assembly A suitable source for the cavity 30 (four). In a particular embodiment, the heater 40 is a ceramic block (e.g., aluminum nitride) having a second resistive heating element embedded in the second heating element. The heating element 26 is controlled. In another embodiment, the heater 4A includes a cartridge heater that slides into a cavity machined into a heater block. The auxiliary heater 40 is mounted in the cavity 30. And adjacent the bottom surface 32 of the substrate support 22 to provide a good thermal contact between the heater 4 and the substrate support. According to an embodiment of the invention, the heater 4 is associated with the substrate support 22 Separate parts and are not integrated or bonded to the substrate support. This allows the auxiliary heater to be attached, removed and replaced during the life of the substrate processing tool. Furthermore, these two parts are not Bonded in a fixed manner The chance of cracking at the interface between the surface 3 2 and the auxiliary heater 40 is reduced or eliminated due to the stress associated with the difference in coefficient of thermal expansion between the heater 40 and the substrate support 22. Some implementations of the invention Examples include a biasing mechanism (not shown in Figure 2) that pushes the heater 40 into thermal contact with the substrate support (as described below) and which also allows the auxiliary heater to be easily detached if desired When the heater 20 is positioned within the substrate processing chamber, the cavity 30 is isolated from the substrate processing region (not shown) of the chamber 201208496. In general, the cavity 3 is at atmospheric pressure while the substrate The treatment area is evacuated to the sub-atmosphere or near vacuum pressure. Therefore, the heater 4G is not exposed to the environment within the processing chamber (which is often rotted). Although not shown in Figure 2, in a special implementation The towel 'heater 4' includes four terminals that operate through a drawbar 3 to a substrate support that includes two heater terminals, an RF terminal, and a thermocouple terminal. Allow substrate to be added The additional margin of temperature control at the center of the device 2 allows the substrate positioned on the surface 21 to see a more uniform temperature across the overall surface. As previously mentioned, without this additional temperature control, The central region of the substrate may sometimes be colder than the surrounding region, which may result in non-uniform processing of the substrate. For example, a central cold heater temperature profile will result in, inter alia, deposition of each sacvd 矽 oxide thick 臈 or film Membrane deposition in the higher central region. The inventors have determined that this problem is partly caused by the lack of a heater coil at the center where it is the area required to connect the heater to the desired terminal of the RF electrode. However, even The heater coil design of the heating element 26 is optimized such that a particular heater delivers a uniform temperature profile at a particular temperature (e.g., 480 C or 540 °C) across the surface of the overall substrate, and the conductivity of the A1N will still vary with temperature. . Therefore, as the heater set point is lowered, the Ain thermal conductivity of the base 28 and the substrate support 22 is increased, thereby increasing the heat loss through the base. Even a temperature difference of 5% between the center and the periphery (for example, 500 ° C at the periphery and 497.5 〇 c at the center) may cause unacceptable performance in terms of film uniformity. 201208496 The embodiment of the invention is supplemented by an auxiliary heater 4 加 plus 'living' the auxiliary heater 40 in the cavity 30 of the shaft 28, the lower surface of the transfer substrate support 22 at the interface 32 In the operation example (shown in Figure 3), the auxiliary:: the back of the material support member 22::: touch or: the alloy of the above, etc.) 'It is in contact with the base field and the fish watch. The air gap 58 surrounds the heater block side wall/twist so that the heater block does not directly contact the base shaft 28 of the "etc. (4) 5G can be heated by means such as a resistive heater, or a type of heating: thermocouple" Monitoring the temperature of the auxiliary heater at a temperature of 2I: The desired set point of the thermal S block 5〇 can be based on whether the substrate support or the temperature sensor (not shown) indicates the temperature difference with respect to the periphery. And set. The end rods (e.g., the rods) are run through the tubing 54 and 56 to provide power to the inset: and the resistive heating elements embedded in the substrate support 22 (all not shown in Figure 3) As mentioned above, the substrate support 22 includes one or more temperature sensors or thermocouples (not shown) that are different from the thermocouple 52. The I substrate support is in different positions. The temperature 'i' is operatively lightly coupled to a resistive heater (such as heater 26 shown in FIG. 2, which is the primary source of heat to the building member 22). 4 is a simplified perspective view of a substrate heater according to another embodiment of the present invention, wherein the auxiliary heater 6 is assembled in the cavity and is coupled to the substrate support in the cavity. #22#下下。 The heater 60 and the inner surface of the shaft 28 are cut through the air gap 58 as shown in the figure. The heater 60 can be made of a metal or ceramic block (such as aluminum nitride) 201208496 and includes a heater 装配 6 thermocouple 62 assembled in a cavity of a size π order to resemble the previous pair of thermocouples. 52 The temperature of the square member support member. Lines 64a, 64b depict "
Mb如供功率/訊號給加熱Mb is supplied with power/signal for heating
IsS 61及熱偶62。加私3|间以π、 那热喆匣61可包括例如標準電阻式 鶴加熱器元件。 陶瓷帽63固定至加熱器6〇的端部以固持加熱器匿η 在適當位置。_帽63可由絕緣陶究材料（諸如氧化幻 製成，其具有比氮化鋁低的導熱率，以將軸桿3〇内以及 加熱器60下方的部件隔離1^ ^ 干加離其熱。與陶瓷帽63分開的是 商溫陶竞（例如Al2〇3 )杯*4. ^扳65，其以可操作式附接彈簧 66於接近板65的中心點處。在並 地仕具他貫施例中，板6 5可 由尚溫塑膠或類似材料製成。 一個或多個陶竟管路67定位在板65與帽63之間使 加熱器與RF料得㈣行通過該等管路到達基材支樓 件22。彈簧66㈣板65、管路67與帽63之組件，使 得在操作上’加熱器60的上表面與基材支稽件22的下IsS 61 and thermocouple 62. In addition to π, the enthalpy 61 may include, for example, a standard resistive crane heater element. A ceramic cap 63 is fixed to the end of the heater 6'' to hold the heater in place. The cap 63 can be made of an insulating ceramic material, such as oxidized phantom, which has a lower thermal conductivity than aluminum nitride to isolate the components within the shaft 3 and the heater 60 from the heat. Separate from the ceramic cap 63 is a Shang Wen Tao Jing (eg Al2〇3) cup*4. ^ Puller 65, which is operatively attached to the spring 66 at the center point of the plate 65. In the embodiment, the plate 65 may be made of a temperature-sensitive plastic or the like. One or more ceramic pipes 67 are positioned between the plate 65 and the cap 63 to allow the heater and the RF material (four) to pass through the pipes. The substrate support member 22. The spring 66 (four) plate 65, the assembly of the conduit 67 and the cap 63, such that the upper surface of the heater 60 and the substrate support member 22 are operationally
表面熱接觸1簀66定位餘㈣加熱器基座板I 该基座板固定式附接底座28。 顯示於第5圖的另—音说& 以 ^貫施例中，輔助加熱器70定位在 底座28的空腔30ιλι，-ifej· 腔30内，並且耦接彈簧負载機構72,該機 構使加熱器70得以在第—位置之間移動或移動進入第 一位置’該第一位置是當期望有額外熱量控制時，加熱 器以可操作式與基材支撐件接合之處，而該第二位置是 加熱器70*實體接觸基材支料處。加熱器μ包括一 11 201208496 個或多個孔洞71，端桿73 (例如電極24與RF加熱器 26的端桿）延伸通過該等孔洞71。孔洞71使加熱器7〇 得以在底座空腔内上下滑動。如需要，則瓦楞狀羯B(例 如A卜Cu、BeCu等）或陶竞荡或類似的部件能夠定位 在加熱器70 (以及其他實施例中所示的加熱器、 60或80)與基材支撐件的界面之間，以使兩個主體之間 的熱傳生效。 在第6圖的又一實施例十，輔助加熱器8〇以可操作式 耦接彈簧’使得加熱器能夠接合底座軸桿28的内表面 8卜該内表面耗接基材支標件22的底部。為了接合表面 8卜加熱器80能夠透過沿線85分開而徑向擴張。一旦 接合’來自加熱H 80的熱傳送通過軸桿28到支樓件以 底部處的環狀區域。如第7A圖所示（其為軸桿28的簡 化截面圖）’在-些實施例中，轴桿28的截面在外表面 8:處是圓形，但在内表面81處具有矩形、磨圓的矩形、 =。此就圓形基材而言非對稱的形狀在基材支撐件 22一匕括以可操作式輕接真空線路料的真空夹盤（圖中 加熱器8〇能夠設計成透過提供轴桿 的，此、：邛伤處較高的溫度而補償非對稱形狀，軸桿28 他域件22底部接觸的表面積比轴桿 有具有如第7B圖所千夕冋此 支揮件22上受處… 固形截面，且因此就在 、圓形基材而言是對稱的。 第8圖與第9圖描泠 、’曰員不本發明相較於先前已知基材 12 201208496 支：件之效率的測試結果。詳言之，第8圖顯示相較於 先前已知的加熱器（「基準線」測試），本發明的實施例 能夠用於改善遍及在根據本發明之基材加熱器上受處理 之晶圓表面上的溫度均勻性◊注意，在〇%功率處，特別 的5 5 0 C製程的溫度均勻性比先前已知的加熱器糟糕， 运是因為加熱器作用為吸熱體以將熱量傳送遠離晶圓中 心，此時該晶圓中心已經比此加熱器設計中處於55〇。c 的周邊冷。雖輔助加熱器被賦能5〇%，相較於無本發明 技術者，以本發明之技術，橫跨基材上平均溫度差下降 且溫度更加均句。第9圖顯示繪於第8圖中的測試功率 層級在不同基材半徑處所量的真實溫度。 一些例子中，基材支撐件的設計可具有在一些或所有 溫度範圍下確實比周邊更熱的中心溫度。本發明的實施 例亦能夠透過不賦能輔助加熱器内的加熱器或透過以比 基材溫度低的設定點驅動輔助加熱器，而改善這些基材 支撐件的非均勻性。在這些情況中，具有相對大質量的 辅助加熱器作用為吸熱體，將熱量從基材令央汲引，因 此相對於周邊而冷卻基材中央。 【圖式簡單說明】 第1圖是根據先前技術的基材加熱器之簡化截面圖； 第2圖是根據本發明實施例的基材加熱器之簡化截面 13 201208496 第3圖是根據本發明另一實施例的基材加熱器之簡化 透視圖； s 之簡化 第4圖疋根據本發明再一實施例的基材加熱器 透視圖； 施例的基材加熱器之簡化 施例的基材加熱器之簡化 第5圖是根據本發明另一實 截面圖； 第6圖是根據本發明又一實 截面圖； 第7A圖與第7B圖是根據本發明不同實施例的加熱器 軸桿的簡化截面圖；而 ‘ 第8圖與第9圖描洛Ss_ 。 圖描1顯示本發明相較於先前已知基材 加熱器之效率的測試結果。 【主要元件符號說明】 2底座加熱器 4支撐件 6底座 8電極 ^電阻式加熱器 12、14電連接桿 2〇基材加熱器 21表面 22基材支撐件 24 RF電極 2 6加熱元件 28底座 30空腔 3 2底部表面 4〇輔助加熱器 50加熱器塊 52熱偶 54、56管路 14 201208496 58 空氣間隙 70 輔 助 加 熱 器 60 加熱器 71 孔 洞 61 加熱器匣 72 彈 簣 負 載 機構 62 熱偶 73 端 桿 63 帽 80 輔 助 加 熱 器 64a 、64b線路 81 内 表 面 65 板 83 外 表 面 66 彈簧 84 真 空 線路 67 管路 85 線 68 基座板 15Surface Thermal Contact 1箦66 Positioning Remaining (4) Heater Base Plate I This base plate is fixedly attached to the base 28. The auxiliary heater 70 is positioned in the cavity 30 ιλι, -ifej cavity 30 of the base 28 and coupled to the spring load mechanism 72, which is shown in FIG. The heater 70 is moved or moved between the first position into a first position 'this first position is where the heater is operatively engaged with the substrate support when additional heat control is desired, and the second The location is where the heater 70* physically contacts the substrate support. The heater μ includes an 11 201208496 or plurality of holes 71 through which the end bars 73 (e.g., the electrode 24 and the end bars of the RF heater 26) extend. The hole 71 allows the heater 7 to slide up and down within the base cavity. If desired, corrugated 羯B (eg, A, Cu, BeCu, etc.) or pottery or similar components can be positioned in heater 70 (and heaters, 60 or 80 shown in other embodiments) and substrate Between the interfaces of the supports, so that heat transfer between the two bodies takes effect. In still another embodiment 10 of FIG. 6, the auxiliary heater 8 is operatively coupled to the spring 'to enable the heater to engage the inner surface 8 of the base shaft 28, the inner surface consuming the substrate support 22 bottom. In order to engage the surface 8, the heater 80 can be radially expanded by being separated along the line 85. Once joined, the heat from the heated H 80 is transmitted through the shaft 28 to the annular portion of the slab member at the bottom. As shown in Figure 7A (which is a simplified cross-sectional view of the shaft 28), in some embodiments, the cross-section of the shaft 28 is circular at the outer surface 8: but has a rectangular, rounded surface at the inner surface 81. Rectangle, =. Thus, the asymmetric shape of the circular substrate is such that the substrate support 22 includes a vacuum chuck that is operable to lightly connect the vacuum line material (the heater 8 can be designed to provide a shaft, This: the higher temperature of the bruise compensates for the asymmetric shape, and the surface area of the shaft 28 contacting the bottom of the shaft member 22 has a surface area as compared with the shaft as shown in Fig. 7B. The cross section, and thus the symmetry of the circular substrate, is illustrated in Figures 8 and 9. "The employee does not compare the invention with the prior known substrate 12 201208496: the efficiency of the test Results. In detail, Figure 8 shows that embodiments of the present invention can be used to improve processing over a substrate heater in accordance with the present invention as compared to previously known heaters ("baseline" tests). Temperature uniformity on the wafer surface ◊ Note that at 〇% power, the temperature uniformity of the special 550 C process is worse than previously known heaters because the heater acts as a heat sink to transfer heat. Far from the center of the wafer, at which point the center of the wafer has been heated In the design of the device, the periphery is cold at 55 〇 c. Although the auxiliary heater is energized by 5 〇%, the average temperature difference across the substrate is lowered and the temperature is further improved by the technique of the present invention than without the technique of the present invention. Figure 9. Figure 9 shows the true temperature measured at different substrate radii in the test power level plotted in Figure 8. In some examples, the substrate support can be designed to have a better than some perimeter in some or all temperature ranges. a hotter center temperature. Embodiments of the present invention are also capable of improving the non-uniformity of the substrate support by disabling the heater in the auxiliary heater or by driving the auxiliary heater at a set point lower than the substrate temperature. In these cases, the auxiliary heater having a relatively large mass functions as a heat absorbing body, and heat is introduced from the substrate, so that the center of the substrate is cooled with respect to the periphery. [Simplified illustration] FIG. 1 is based on A simplified cross-sectional view of a prior art substrate heater; FIG. 2 is a simplified cross-section of a substrate heater in accordance with an embodiment of the present invention. 13 201208496 FIG. 3 is a substrate in accordance with another embodiment of the present invention Simplified perspective view of the heat exchanger; simplification of the fourth embodiment 透视 perspective view of the substrate heater according to still another embodiment of the present invention; simplified embodiment of the substrate heater of the simplified embodiment of the substrate heater of the embodiment Another solid sectional view according to the present invention; Fig. 6 is a further cross-sectional view according to the present invention; Figs. 7A and 7B are simplified cross-sectional views of a heater shaft according to various embodiments of the present invention; Figure 8 and Figure 9 show the Ss_. Figure 1 shows the test results of the present invention compared to the previously known substrate heater efficiency. [Main component symbol description] 2 base heater 4 support 6 base 8 electrode ^ Resistive heaters 12, 14 electrically connected to the rod 2 〇 substrate heater 21 surface 22 substrate support 24 RF electrode 2 6 heating element 28 base 30 cavity 3 2 bottom surface 4 〇 auxiliary heater 50 heater block 52 heat Even 54, 56 pipeline 14 201208496 58 Air gap 70 Auxiliary heater 60 Heater 71 Hole 61 Heater 匣 72 Bolt load mechanism 62 Thermocouple 73 End rod 63 Cap 80 Auxiliary heater 64a, 64b Line 81 Inner surface 65 plate83 Outer surface 66 Spring 84 Vacuum line 67 Line 85 Line 68 Base plate 15