TW201207983A - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
TW201207983A
TW201207983A TW100118173A TW100118173A TW201207983A TW 201207983 A TW201207983 A TW 201207983A TW 100118173 A TW100118173 A TW 100118173A TW 100118173 A TW100118173 A TW 100118173A TW 201207983 A TW201207983 A TW 201207983A
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Taiwan
Prior art keywords
film forming
chamber
substrate
film
forming apparatus
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TW100118173A
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Chinese (zh)
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Yasuo Shimizu
Takafumi Noguchi
Katsuhiko Mori
Munemoto Hagiwara
Masatoshi Nakamura
Takehisa Miyaya
Yawara Morioka
Takashi Shigeta
Hiroto Uchida
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Ulvac Inc
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Publication of TW201207983A publication Critical patent/TW201207983A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A film forming apparatus that forms a film on a substrate, the film forming apparatus including: a transportation chamber accommodating a first moving device on which a career holding the substrate is mounted, the first moving device is movable; a plurality of film forming chambers and a loading-ejecting chamber that are provided so as to communicate with an individual opening and closing devices interposed therebetween; and discharging devices that are individually provided to each of the transportation chamber, the loading-ejecting chamber, and the film forming chamber.

Description

201207983 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種太陽電池用之成膜裝置。 本申請案係基於2010年5月24曰向曰本申請之曰本專利 特願2010-118336號而主張優先權，且將其内容引入本文。 【先前技術】 當前之太陽電池中，一大半係使用單晶矽（Si)或多晶矽之 晶態矽太陽電池，其廣泛流通於市場◦然而，§1之材料不 足等問題令人擔憂，近年來對於製造成本較低且材料不足 之風險較小之例如利用薄膜矽之薄膜太陽電池的需求不斷 增咼。進而，各公司正積極進行如下嘗試：除了先前廣泛 使用之僅利用非晶石夕（a_Si)層而成之單接面型之薄膜太陽 電池以外，最近研究出將a_Si層與微晶矽bc_Si)層積層而成 $多接面型之太陽電池（例如串聯型薄膜太陽電池），以期提 尚轉換效率。 於形成薄膜太陽電池之光電轉換層（發電層）之情形時， 大多係使用電聚cvD(Chemieal Vap0r Dep〇siti〇n，化學氣相 沈積）裝置（成膜裝置），具體而1•，作為電裂CVD裝置可列 • 舉例如單片式PE-CVD(電漿c VD)裝置、連續式pE_cVD裝置 , 及批次式PE-CVD裝置等（例如參照專利文獻丨、2)。 然而，先前用以量產薄媒太陽電池之電聚⑽裝置(成膜 裝置）係例如經由門閥將饋入/取出室與成膜室之間直接連 接而成之腔室。於此種腔室構成之成膜裝置中，自饋入/取 出室取出基板或向饋入/取出室内放入基板時，必須變更饋 156412.doc 201207983 入/取出室之氣體環境’即’將饋入/取出室自真空狀態變更 為大氣壓狀態，或者反過來自大氣壓狀態變更為真空狀蘇。 因此，每當使基板於饋入/取出室與成膜室之間移動時， 饋入/取出室内之不穩定之氣體m境被帶入至成膜室内，其 結果導致成膜室内受到影響，而難以於穩定之環境、且無 到控制之成膜條件下進行成膜。又，於一次處理複數塊大 板之情形時，亦極難有效地進行如上所述之饋入/取出— •之 氣體環境之變更動作（操作）》 [先行技術文獻] [專利文獻] [專利文獻1]曰本專利特開平5-63223號公報 [專利文獻2]曰本專利特開平1 號公報 【發明内容】 [發明所欲解決之問題] 本發明之若干態樣㈣於上述狀況研究而成者，其目的 在於提供-種向成膜室内之基板移動不對饋人/取出 之氣體環境變動造成影響、且可同時進行多個不同製 生產效率良好的成臈裝置。 [解決問題之技術手段] 為解決上述問題 置。 本發明之若干態樣提供如下之成膜裝 其内置Si之成膜裝置之特徵在於包括:搬送室 構，入㈣ 基板之搬運器且可自走之第-移動 構，饋人/取出室及複數個成膜室，其係以與上述搬送室 156412.doc 201207983 通之方式經由個別之開閉機構而配置；及排氣機構，其個 別地附設於上述搬送室、上述饋入/取出室及上述成膜室； 且於上述複數個成膜室内分別具備在上述基板上形成被膜 之成膜裝置。 ' 於上述態樣中，上述第—移動機構進而包括使上述搬運 器於上述搬送至與上述成膜室之間移動之第二移動機構。 於上述態樣中，上述搬運器具備複數個，上述第二移動 機構使複數個上述搬運器同時移動。 於上述j樣令，上述成膜室具備上述基板之加熱機構。 於上述態樣令，上述搬運器係以上述基板之面沿重力方 向之方式進行保持’且上述第—移動機構可載置複數個上 述搬運器。 於上述態樣中，上述搬運器可保持複數個上述基板。 於上述態樣中，於上述搬送室内内置複數個上述第一移 動機構。 於上述態樣中’於上述搬送室之兩側設有複數個上述成 膜室’且上述第-移動機構可自彼此不同之2個方向取出或 放入上述搬運器。 於上述態樣中，上述成膜機構可對複數個基板同時成膜。 於上述1、樣中，上述成膜機構係包含複數個陰極電極、 及设於上述各陰極電極之兩側之陽極電極的電漿CVD機 構。 於上述態樣中，上述基板係以其面沿重力方向之方式被 上述搬運器保持之狀態，於上述陰極電極與上述陽極電極 1564I2.doc 201207983 之間搬入/搬出。 於上述J樣中，上述被膜係用於太陽電池之微晶矽膜。 於上述I、樣中’上述成膜裝置包括將與上述成膜室不同 種類之被膜成膜之其他成膜室。 於上述I、樣中’上述成膜裝置包括將與上述成膜室相同 種類之被膜成膜之其他成膜室。 [發明之效果] 此種搬運器於饋人/取出室與成膜室之間移動、或搬運器 於成膜室彼此之間移動時，係、經由包括於真空環境下載置 搬運器且可移動之第一移動機構之搬送室而進行，且藉由 經由使第-移動機構與饋入/取出室或成膜室之間連‘之 開閉機構’而維持真空㈣地使搬運器於該等各室間移 動，藉此連續且依序地供給保持有基板之多個搬運器，從 而可短時間且有效地於基板上進行成膜。 【實施方式】 以下 歹…園式對本發明之一實施形態之成膜裝置進行 說明。再者，本實施形態係為更佳地理解本發明之主旨而 具體說明者’只要未特別指定，則並非限定本發明者。又， 於以下之說明中所用之圖式為易於理解本發明之特徵，方 便起見有時將作為要部之部分放大表示， 寸比率等不限於與實際相同。 素 首先’對於藉由使用本實施形態之成膜裝置進行成膜而 製造之薄膜太陽電池’係以串聯型為例進行說明、然而， 本發明之成膜裝置之用途並非僅限定於串聯型者。 156412.doc 201207983 (薄膜太陽電池） 圖1係薄膜太陽電池之剖面圖。如圖1所示，例如串聯型 之薄膜太陽電池100積層有：包含構成表面之基板W、及設 於基板W上之透明導電膜之上部電極1 〇 1 ;由非晶石夕（a_s〇 構成之頂部單元102 ;包含設於頂部單元102與下述底部單 元104之間之透明導電膜的中間電極103 ;由微晶矽（pc_si) 構成之底部單元（微晶矽膜）1〇4 ;包含透明導電膜之緩衝層 105 ;及包含金屬膜之背面電極1〇6。即，自太陽光入射側 觀察’薄膜太陽電池1〇〇係將包含a_Si之頂部單元1〇2、及包 含gc-Si之底部單元104依序疊合併積層而成，且分別以頂部 單元102吸收短波長光，以底部單元i〇4吸收長波長光，藉 此可提高發電效率。 頂部單元102之p層（l〇2p)、i層（i〇2i)、n層（ι〇2η)之3層構 造係由a-Si形成。又，底部單元1〇4之ρ層（1〇4ρ)、丨層（1〇4i)、 η層（104η)之3層構造係由pC_si構成。 以此方式構成之薄膜太陽電池1〇〇於太陽光中所含之所 明光子之能量粒子碰撞i層時’藉由光伏效應而產生電子與 電洞（hole)，且電子向n層移動，電洞向p層移動。藉由該光 伏效應所產生之電子係藉由上部電極1〇1與背面電極1〇6而 掠出’且可將光能轉換為電能。 又，藉由於頂部單元102與底部單元1〇4之間設有中間電 極103 ’通過頂部單元102而到達底部單元1〇4之光的一部分 被中間電極103反射並再次入射至頂部單元1〇2側，故有助 於提高單元之感光度特性，提高發電效率。 156412.doc 201207983 又’自玻璃基板w側入射之太陽光，通過各層後由背面 電極106發射。薄膜太陽電池100為提高光能之轉換效率， 較佳採用用以實現延長入射至上部電極101之太陽光之光 程的稜鏡效應及光之封閉效應的紋理構造。 (薄膜太陽電池之製造裝置） 圖2係作為本發明之成膜裝置之一例的薄膜太陽電池之 製造裝·置之整體構成圖。如圖2所示’薄媒太陽電池之製造 裝置（成膜裝置）10包括搬送室18,該搬送室18内置有載置保 持有基板W之搬運器21且可自走之橫動裝置（第一移動機 構）17。又，以與該搬送室18連通之方式經由個別之門閥（開 閉機構）19而形成有饋入/取出室13及複數個成膜室η。於該 等饋入/取出室13、複數個成膜室11及搬送室丨8内分別個別 地附設有真空泵（排氣機構）3〇、43、50。 複數個成膜室11、11…係夾持搬送室18而形成於其兩 側。而且’橫動裝置（第一移動機構）丨7構成為：以能夠相對 於夾持搬送室18而形成於兩側之彼此對向的2個成膜室j i 之雙方而交接搬運器21之方式，可自彼此不同之2個方向取 出放入搬運器21。 成膜室11、11…係可對於複數個基板W同時使用CVD法進 行成膜之成膜室，且包括：成膜室11A，其成膜由a-Si構成 之頂部單元102之p層（i〇2p)或n層（1〇2n);成膜室11B，其成 膜由a-Si構成之頂部單元102之i層（l〇2i);及成膜室lie，其 成膜由pc-Si構成之底部單元ι〇4(半導體層）之p層（1〇4p)、} 層（104i)、η層（104η)。 156412.doc 201207983 進而，於成膜室11A中可形成加熱基板w而使其成為特定 之成膜溫度之加熱器（加熱機構）。該加熱器（加熱機構）例如 以如下方式進行加熱：於最初之成膜步驟中加熱基板〜， 且於其後之成膜室11B、成膜室11C中之成膜時，亦以溫度 按特定之溫度梯度緩緩下降並利用餘熱保持為高溫之狀態 進行成膜。 饋入/取出室13係包含相對於搬運器21而饋入基板w之饋 入室13A、及自搬運器21中取出已成膜之基板w之取出^ 13B。 搬送室18係以内部可成為真空狀態之方式形成為大致長 方體，且沿其長度方向例如敷設有導軌16，橫動裝置（第— 移動機構）17形成為可沿該導執丨6移動。橫動裝置（第一移動 機構）17係載置搬運器21而沿導轨16呈直線狀地自走，且於 各成膜室11及饋入/取出室13之間搬送搬運器21。 橫動裝置（第一移動機構）17設為可載置丨個搬運器21或 複數個搬運器2丨。藉此，亦可於成膜室丨丨及饋入/取出室13 之間同時搬送複數個搬運器21。 如此之搬送室18上連接有用於真空排氣之排氣管（省略 圖不），且經由該該排氣管而設有真空泵5()。藉由如此之真 工栗50’將包含t田、動裂置（第一移動機構）17之搬送室以之内 部設為真空狀態。 成膜至11及饋入/取出室13係配置於鄰接於如此之搬送 室18之位置（面向位置）上，成膜室11A、11B、11C、及馈入 至13A取出室13B係經由與該搬送室18之間分別形成之門 1564I2.doc 201207983 閥（開閉機構）19而可連通。 該門閥（開閉機構）19係僅於成膜室11及饋入/取出室13與 橫動裝置17之間交換搬運器21時，維持雙方之真空狀熊， 即成膜室11、饋入/取出室13與搬送室18之真空狀態而開放 的氣密門即可。 於橫動裝置（第一移動機構）17上，可形成能夠經由門閥 (開閉機構）19而於成膜室η及饋入/取出室13與橫動裝置17 之間移動1個或複數個搬運器21之拔插裝置（第二移動機 構於門閥（開閉機構）19開放之狀態下驅動拔插裝置（第 二移動機構）15,經由門閥19將載置於橫動裝置（第一移動機 構）17之搬運器21送入至成膜室u及饋入/取出室13。又，經 由門閥19牽引成膜室u及饋入/取出室13中之搬運器^而 將其載置於橫動裝置17。 對使用如上所述之本實施形態之薄膜太陽電池之製造裝 置（成膜裝置）1〇於基板W上成膜之步驟（成膜裝置之動作） 進行說明。再者，該說明中乃對收容於某一特定搬運器 之基板W上之成膜進行說明，但亦可一邊依序移動複數個 搬運器21 —邊進行成膜。 如圖2所示，例如將成膜處理前之基板w安裝於饋入室 ΠΑ内所設置之搬運器2丨上。如此之基板w向搬運器幻之安 裝，例如可使用臂式機械手自收容有多個基板w之匿盒（省 略圓示）令逐塊取出基板W而進行。 搬運益21將基板W沿縱方向即圖2之紙面深度方向安裝 即可。又，只要構成為於各搬運器21上沿如此之縱方向分 156412.doc 201207983 別安裝複數塊、例如2塊基板W即可。 其次’如圖19A所示’使收容於搬送室18之橫動裝置（第 移動機構)17沿導轨16自走’並移動至與饋入室丨3 A對向 (鄰接）之位置。然後，將搬送室18及饋入室13A保持為真空 狀態’開放將搬送室18與饋入室13 A隔開之門閥（開閉機 構）19’使搬送室18與饋入室13A在真空狀態下連通。接著， 如圖19B所示，藉由形成於橫動裝置（第一移動機構）17之拔 插裝置（第二移動機構）15，經由門閥19牽引饋入室13A内之 搬運器21而將其載置於橫動裝置17。 如圖19C所示’若搬運器21被載置於橫動裝置17，則再次 關閉門閥（開閉機構）19。然後，使橫動裝置17沿導軌16自走 至例如與成膜室11A對向（鄰接）之位置為止。另一方面，門 閥（開閉機構）19已關閉之饋入室13A再次變成大氣壓狀態 後’亦可實施於其他搬運器21上收容成膜處理前之基板w 之步驟。 動裝置17鄰接於成膜室11A’則將搬送室18及成膜室 11A保持為真空狀態，開放將搬送室18與成膜室UA隔開之 門閥（開閉機構）19，而使搬送室1 8與成膜室〖1A以真空狀態 連通。接著，藉由形成於橫動裝置（第—移動機構）17之拔插 裝置（第二移動機構）15’經由門閥19而使載置於橫動裝置17 之搬運器21移動至成膜室ha内。 使用拔插裝置（第二移動機構）15將保持有成膜處理前之 基板wi之搬運器21移動至成膜室n(11A)，當移動結束之後 使擋板25變成關閉狀態。再者，成膜室丨丨係保持為真空狀 156412.doc •11· 201207983 態。此時，安裝於搬運器21之成膜處理前之基板W1於成膜 室11内以沿鉛錘方向（縱方向）的狀態插入即可，使得表面 WO在構成成膜機構之陽極組件（陽極電極）90與陰極組件 (陰極電極）68之間形成為與重力方向大致平行（參照圖20、 圖 21)。 該陽極組件（陽極電極）90係分別形成於複數個陰極組件 (陰極電極）68之兩側’藉此構成電漿cVD機構。 再者’構成如此之成膜機構之陽極組件（陽極電極）9〇與 陰極組件（陰極電極）68以插入至成膜室11之複數個基板w 可同時成膜之數形成即可》 如圖20、圖21所示，藉由驅動裝置71使移動電極組件31 之2個陽極组件90於彼此接近之方向移動，而使陽極組件 90(陽極67)與成膜處理前之基板W1之背面wu抵接。 如圖22所示，若進而驅動驅動裝置乃，則成膜處理前之 基板W1被陽極67推壓而向陰極組件68側移動。並且，移動 至使成膜處理前基板W1與陰極組件68之喷淋板75之間隙 成為特疋距離（成膜距離）為止。再者，該基板冒丨與陰極組 件68之噴淋板75之間隙（成膜距離）為5〜Η爪⑺左右既可，例 如為5 mm左右。 此時抵接於基板wi之表面wo側之搬運器21的夾持部 59之夾持片59A係隨著成膜處理前之基板们（陽極組件9〇) 移動而移位。再者’當陽極組件的朝向自陰極組件^離 開之方向移動時’於夾持片59A上作用彈簧等之恢復力而朝 向夾持片59B側移位。此時，成膜前基板—係藉由陽極ο 156412.doc 201207983 及夾持片59A而夾持β 若成膜處理前基板W1朝向陰極組件68側移動，則夾持片 59Α抵接於遮罩78，此時陽極組件9〇之移動停止（參照圖 23)。 此處，如圖23所示，遮罩78係以覆蓋失持片59Α之表面及 基板w之外緣部之方式而形成，並且形成為可與夾持片59α 或基板w之外緣部密接。即，遮罩78與夹持片59Α或基板w 之外緣部之接合面具有密封面之作用，使得成m氣體大體 上不會自該等遮罩78與夾持片59A或基板w之外緣部之間 向陽極67側洩漏》 藉此，成膜氣體擴散之範圍受到限制，而可抑制不需要 之範圍成膜之狀況。藉此，可減小清潔範圍且可減少清潔 頻率’裝置之運行率提高。 又，因成膜處理前基板贾丨之移動係因基板w之外緣部抵 接遮罩78而停止，故遮罩78與喷淋板乃及排氣導管79之間 隙、即氣體流路R之厚度方向之流路高度係以成膜處理前基 板W1與陰極組件6 8之間隙成為特定距離的方式而設定。 作為另一形態，亦可藉由經彈性體而將遮罩安裝於排氣 導管79’使基板W與喷淋板75(=陰極)之距離能夠根據驅動 裝置71之行程而任意變更。於上述說明中係記載遮罩冗與 基板W抵接之情形，但亦可隔開能夠限制成膜氣體通過之 微小間隔而配置遮罩78與基板w。 於此種狀態下自陰極組件68之喷淋板75噴出成膜氣體， 並且啟動匹配箱72而對陰極纟且件68之噴淋板（=陰極）75施 156412.doc 201207983 加電壓，藉此使成膜空間81内產生電漿，對成膜處理前之 基板Wi之表面WO實施成膜。此時，藉由内置於陽極67之 加熱器（加熱機構）而將成膜處理前之基板^加熱至所需溫 度。 此處，若加熱成膜處理前之基板W1達到所需溫度則陽極 組件90停止加熱。然而，因陰極組件68上施加有電壓而使 得成膜空間81内產生電漿。隨著時間之經過，由於自電漿 之熱量輸入，即便陽極組件90停止加熱亦有成膜處理前之 基板W1的溫度上升至超過所需溫度之虞。該情形時，亦可 使陽極組件9G作為用以冷卻溫度過度上升之絲處理前基 板W1之散熱板而發揮功能。因此，成膜處理前基板W1可無 關於成膜處理時間之時間經過而保持為所需溫度。 ‘ 於成膜中及成膜後，自形成於陰極組件68之周緣部之排 氣口 80而排出成膜空間81之氣體或副產物，並且所排出之 氣體經由氣體流路R而自陰極組件68之周緣部之排氣導管 79通過開口部（形成於陰極組件68之下部之排氣導管79的 朝向成膜室11之面83上之開口部），且自形成於成膜室丨丨之 側面下部之貫通孔28内所設之排氣管29向外部排氣。 若成膜結束’則藉由驅動裝置71使2個陽極組件9 〇向彼此 背離之方向移動，將成膜處理後基板W2及框架5"夾持片 59A)返回至原本之位置（參照圖21、圖22)。進而，藉由使 陽極組件90向背離方向移動，成膜處理後基板W2與陽極組 件90背離（參照圖2〇)。 若對成膜室11A内之基板W之成膜結束，則使收容於搬送 156412.doc ⑧ 14· 201207983 室18内之橫動裝置（第一移動機構）17沿導軌16自走，並移動 至與成膜室11A對向（鄰接）之位置為止。然後，將搬送室18 及成膜至11A保持為真空狀態，開放將搬送室μ與成膜室 11A隔開之門閥（開閉機構）19 ’使搬送室18與成膜室UA以 真空狀態連通。接著，藉由形成於橫動裝置（第一移動機 構）1 7之拔插裝置（第二移動機構）丨5，經由門閥丨9牽引成膜 室11A内之搬運器21而將其載置於橫動裝置17。 若將搬運器21载置於橫動裝置17，則再次關閉門閥（開閉 機構）19。並且，使橫動裝置17沿導執16自走至例如與成膜 室11B對向（鄰接）之位置為止。另一方面，成膜室UA可對 載置於下一其他搬運器21之基板w進行成膜處理。 重複進行如上之次序，於成膜室11A内成膜圖丨所示之由 a-Si構成之頂部單元102之p層（1〇2p)及η層（1〇2η)β又，於成 膜至11Β内成膜由a_si構成之頂部單元丄们之丨層（i〇2i)。進 而，於成膜室11C内成膜由pc-Si構成之底部單元1〇4(半導體 層）之p層（104p)、i層（l〇4i)、！!層（ι〇4η)。並且，將收容有所 有成膜結束之基板W之搬運器21移動至取出室13Β，將成膜 後之基板W自薄膜太陽電池製造裝置（成膜裝置）1〇中取出。 於搬運器21於如此之饋入/取出室13與成膜室π、u之 間移動、或搬運器21於成膜室π、丨丨彼此之間移動時，係 經由於包括於真空環境下載置搬運器21且可移動之橫動裝 置（第一移動機構）17之搬送室18而進行’且經由使橫動裳置 17與饋入/取出室13或成膜室丨丨之間連通之門閥（開閉機 構）19,維持真空狀態而使搬運器21於該等各室間移動，藉 156412.doc -15· 201207983 此可連續且依序地供給保持有基板w之多個搬運器2ι，從 而可於短時間内有效地於基板w上進行成膜。 尤其，於饋入/取出室13與成膜㈣之間，包括具備於真 空環境下載置搬運器21且可移動之橫動裝置（第一移動機 構）17之搬送室18，藉此可於穩定之環境、且受到控制之成 膜條件下進行成膜。即，如先前之將饋入/取出室與成膜室 11之間經由門閥直接連接之腔室之情形時，自饋入/取出室 13取出基板W或向饋入/取出室13内放入基板料，必須變 更饋入/取出室丨3内之氣體環境，即，將饋入/取出室13自真 空狀態變更為大氣壓狀態、’或者相反地自大氣壓狀態變更 為真空狀態。 因此，每當使基板於饋入/取出室13與成膜室12之間移動 時，饋入/取出室13内之不穩定之氣體環境會被帶入至成膜 至11内，其結果為成膜室U内受到影響，難以於穩定之環 境、且受到控制之成膜條件下進行成膜。 然而，如本實施形態之成膜裝置般，於饋入/取出室13與 成膜室11之間形成可於真空環境下移動搬運器21之搬送室 18’藉此可確實地防止自饋入/取出室13取出基板w或向饋 入/取出室13内放入基板W時變得不穩定之饋入/取出室13 内之氣體環境被帶入至成膜室丨丨内的狀況。藉此，成膜室 11内之環境始終保持固定，從而可於穩定之環境、且受到 控制之成膜條件下於基板w上進行成膜。 圖3〜圖5係表示成膜室之一例之概略構成圖，圖3係立體 圖’圖4係自與圖3不同之另一角度觀察之立體圖，圖$係側 156412.doc ⑧ •16· 201207983 視圖。如圖3〜圖5所示，成膜室11係形成為例如箱型。於成 膜室Π之與搬送室18連接之側面23上，形成有3處可通過搭 載有基板W之搬運器21之搬運器搬出搬入口 24。又，於搬 運器搬出搬入口 24上設有打開或關閉搬運器搬出搬入口 24 之門閥（開閉機構）19之一部分。 於門閥19及擋板25關閉時，搬運器搬出搬入口 24為確保 氣密性而關閉《於與側面23對向之側面27上安裝有例如3 座用以對基板W實施成膜之電極組件3 1。電極組件3 1構成 為可自成膜室11裝卸。又，於形成於成膜室u之側面下部 之貫通孔28内，連接有用以對成膜室丨丨内進行真空排氣之 排氣管29，且於排氣管29上設有真空泵30。 於4膜太％電池製造裝置（成膜裝置）1〇中，亦可進而包 括可向成膜室内導入含臭氧（〇3)之氣體之第一含臭氧之氣 體供給機構180。 而且，於裝置之保養時，藉由向上述成膜室丨丨内導入上 述合臭氧之氣體，而使矽膜、尤其是包含微晶矽之 薄膜（底部單元104之p層（l〇4p)、丨層（1〇4〇、11層（1〇4n))於成 膜中所生成之含有聚矽烷之副產物氧化，使其變成矽氧化 物。 如圖5〜圖7所示，亦可於成膜室丨丨内設有向成膜室丨丨内導 入含臭氧之氣體之第一含臭氧之氣體供給機構18〇。第一含 臭氧之氣體供給機構180包括設於外部之含臭氧之氣體供 、=源188、及配设於含臭氧之氣體供給源丨與成膜室11之 間的含臭氧之氣體導入管189。 156412.doc 17 201207983 為除去成膜室11内所堆積之副產物等而必須定期進行保 養，於保養時，藉由第一含臭氧之氣體供給機構丨8〇而將含 臭氧之氣體供給至成膜室11内，而可利用含臭氧之氣體使 成膜室11内所堆積之副產物（聚矽烷）氧化。 因作為該副產物之聚矽烷係茶褐色粉末且具有可燃性， 故操作中需要注意，而作為聚矽烷之氧化物之矽氧化物係 白色粉末且不具有可燃性，故可使用例如真空吸塵器等而 容易地除去》 成膜裝置10可迅速且簡單地處理於矽膜之成膜時所生成 之副產物。又，由於並不如先前般使用水，故保養完成後 可加快成膜室11之啟動。 又，如圖6〜圖8所示，於成膜室u内可設置向成膜室u 内喷射氮氣之氮氣供給機構150 〇氮氣供給機構15〇包括設 於外部之氮氣供給源15 8、配設於氮氣供給源丨5 8與成膜室 11之間的氮氣導入管159、及連接於氮氣導入管159之氮氣 供給配管1 5 1。 氮氣供給配管151係敷設於成膜室丨丨内，且於成膜室“内 之上方包含用以喷射氮氣之第丨供給配管151&及第2供給配 管15ib，且於成膜室丨丨内之下方包含用以噴射i氣之第3供 給配管1 5 1 c及第4供給配管1 5 1 d。 第1供給配管151a係自設於成膜室11之上面之連接凸緣 152起延伸設置，且於成膜室u内之上方係沿搬運器21之前 進方向而配設。 第2供給配管15 lb係與第1供給配管151&同樣地自設於成 156412.doc ⑧ 201207983 膜至11之上面之連接凸緣153起延伸設置，且於成膜室“内 之上方係沿搬運器21之前進方向配設。又，第2供給配管 15 1 b係配„又為與第1供給配管丨51a大略相同之高度且介隔 電極組件3 1而配設於與第1供給配管丨5丨&對向之位置上。 第3供給配管151c係自設於成膜室丨丨之上面之連接凸緣 155起，朝向成膜室u之下部延伸設置於不與電極組件31干 擾之位置上，且於成膜室11内之下方係沿搬運器2丨之前進 方向而配設。 第4供給配管I51d係與第3供給配管151c同樣地自設於成 膜至11之上面之連接凸緣155起，朝向成膜室π之下部延伸 设置於不與電極組件31干擾之位置上，且於成膜室丨丨内之 下方係沿搬運器21之前進方向而配設。又，第4供給配管 1 5 1 d係介隔電極組件3 1而配置於與第3供給配管15 1 c對向 之位置上。 於第1供給配管1518~第4供給配管151d上適當地配設有 可向所需方向喷射氮氣之氮氣噴射機構170。 圖9係氮氣喷射機構170之立體圖，圖1〇係沿圖9之A-A線 之剖面圖，圖11係氮氣喷射機構170之前視圖。 如圖9〜圖11所示，氮氣喷射機構170包括於與第1供給配 管151a〜第4供給配管151d之軸方向大致垂直之方向上延伸 設置之第1配管171、與該第1配管171在軸方向上共通且可 旋轉地連接於第1配管171之第2配管172、與該第2配管172 以在軸方向上正交之方式連接之第3配管173、及配置於該 第3配管173之軸方向兩端部且包含喷射口 175之喷射口構 156412.doc •19· 201207983 件1 76。又，於二個喷射口構件176上分別形成有與喷射口 175不同之氮氣排出孔177。再者，於第1配管m與第2配管 172之間介裝有轴承178。 此處’設於氮氣喷射機構17〇之二個喷射口 175、175之喷 射方向係以朝向不同方向之方式而配設。又，設於氮氣喷 射機構170之二個氮氣排出孔177、177之喷射方向亦係以朝 向不同方向之方式而配設。 並且，該等喷射口 175及氮氣排出孔177係形成為於氮氣 喷射時，第2配管！72經由軸承178而相對於第i配管171旋 轉，即產生扭矩。 藉由以此方式構成氮氣喷射機構17〇，若自氮氣供給源 158供給氮氣，則氮氣自噴射口 175及氮氣排出孔Η?喷射。 同時，氮氣係自喷射口 175及氮氣排出孔177向各不相同之 方向喷射，故第2配管172、第3配管173及噴射口構件176 相對於第1配f 171而旋轉。即，喷射口 175係__面以與第丄 供、。配管151a〜第4供'給配管151d之軸方向正交之軸方向為 中2，換言之以第1配管丨71之轴方向為中心晝圓的方式旋 轉面喷射氮氣，故可遍佈較廣範圍而噴射氮氣。 因此^噴射口 175指向於電極組件31及成膜$11之内壁 上易附者副產物（聚錢）之位置之方式適當地配 射機構17。，藉此可有效地處理微粒。 氣嘴 e再者’若切口 175之噴射方向不同，貝、1並非必須設置氮 b出孔177。相反地，若氮氣排出孔177形成於產生扭矩 置則亦可不必使喷射口 175之喷射方向朝向不同方 156412.doc ⑧ •20· 201207983 向。進而’本實施形態中說明了於一個氮氣噴射機構170 上設有2個噴射口 175之情形’但喷射口 175既可設置1個、 且亦可設置3個以上。 圖12~圖15係電極組件31之概略構成圖，圖12係立體圖， 圖13係自與圖12不同之另一角度觀察之立體圖，圖14係電 極組件31之部分分解立體圖，圖15係陰極組件及陽極組件 之部分剖面圖。如圖12〜圖15所示，電極組件31構成為可裝 卸於成膜室11之側面27所形成之3處開口部26(參照圖4)。電 極組件3 1構成為於底部設有車輪6丨且可於底面上移動。 又於女裝有車輪61之底板部62，在船垂方向上立設有側 板部63 »該側板部63具有閉塞成膜室〗丨之側面27之開口部 26的大小。 如圖14所示，附有車輪61之底板部62亦可設為能夠與電 極組件3 1分離•連接之車架構造。藉由設為此種可分離之 車架構造，將成膜室11連接於電極组件3丨之後，分離車架， 而可作為共用之車架使用於其他電極組件31之移動。 即’側板部63成為成膜室11之壁面之一部分。於側板部 63之一方之面（朝向成膜室丨〖之内部之面）65上，設有實施成 膜時位於基板W之兩面之陽極組件9〇及陰極組件68。於本 實施形態之電極組件3 1中，係夾持陰極組件68而於兩側隔 開地分別配置陽極組件9〇 ’藉由一個電極組件3 1而可同時 對2塊基板W進行成膜。因此，將基板w以被成膜面與重力 方向大略平行之狀態分別對向配置於陰極組件68之兩面 側，2個陽極組件90於於各基板w之厚度方向之外側以與各 I56412.doc •21 · 201207983 基板W分別對向之狀態而配置。再者，陽極組件90係由板 狀之陽極67及内置於陽極組件9〇之加熱器（加熱機構）而構 又，於側板部63之另一方之面69上，安裝有用以驅動陽 極組件90之驅動裝置71、及成膜時用以向陰極組件68之陰 極中間構件76供電之匹配箱72。進而’於側板部63上形成 有向陰極組件68供給成膜氣體之配管用之連接部（未圖示）。 於陽極組件90中内置有加熱器（加熱機構）作為控制基板 W之度之溫度控制機構。又，2個陽極組件90、90構成為 可藉由設於側板部63之驅動裝置7 1而向彼此接近•背離之 方向（水平方向）移動，且基板…與陰極組件68之隔開距離為 可控制。具體而言，實施基板w之成臈時，2個陽極組件9〇、 90向陰極組件68方向移動而與基板w抵接。 進而’向接近陰極組件68之方向移動而調節基板w與接 近陰極組件68之間隔距離至所需之距離。其後，進行成膜， 成膜結束後陽極組件90、90向彼此背離之方向移動，而可 谷易地將基板W自電極組件3 1取出。 進而’陽極組件90經由鉸鏈（未圖示）而安裝於驅動袈置 71，且於成膜至11拉出電極組件31之狀態下，能夠旋動（打 開）至陽極組件90(陽極67)之陰極組件68側之面67A與側板 部63的一方之面65大略平行為止。即，陽極組件9〇於俯視 時可旋動大致90。（參照圖12)。 陰極組件68包含噴淋板75(=陰極）、陰極中間構件76、排 氣導管79、及雜散電容體82。 -22- 1564I2.doc ⑧ 201207983 於陰極組件68上在對向於陽極組件9Q(陽極67)之面上配 置有刀別形成有複數個小孔（未圖示）之嘴淋板乃，能夠朝向 基板w喷射成膜氣體。進而，喷淋板75、75係與匹配箱72 連接之陰極（高頻電極）。於2㈣淋板75、75之間設與有匹 配箱72連接之陰極中間構件％。 P喷淋板75於陰極中間構件76之兩側面係以與該陰極 中間構件76電性連接之狀態而配置。陰極中間構件％與喷 淋板（陰極)75係由導電體形成，經由陰極令間構件76而對喷 淋板（陰極）75施加高頻。因此，2塊喷琳板75、75上施加有 用以產生電漿之同電位•同相位之電壓。 陰極中間構件76係藉由未圖示之配線而與匹配箱⑽ 接。於陰極中間構件76與喷淋板75之間形成有空間部… 自氣體供給裝置（未圖示）而向該空間部77供給成膜氣體。空 間部77構成為利用陰極中間構件76分開，對應於各喷二 75、75而分別形成’且獨立控制自各喷淋板〜75所放出 之氣體。即，空間部77具有氣體供給通路之作用。於該實 施形態中，空間部77係對應於各喷淋板75、75而分別形成， 故陰極組件68具有2個系統之氣體供給通路。 又，於陰極組件68之周緣部遍及大致全周而設有中空狀 之排氣導管79。於排氣導管79上形成有用以排出成膜:間 81之成膜氣體或副產物（微粒）之排氣口 8〇。具體而古，面内 實施成膜時之基板W與噴淋板75之間所形成之成膜空間“ 而形成排氣口 80。排氣口 80沿陰極組件68之周緣部形成有 複數個，且以可遍及全周而大致均等地排氣之方式構成。 156412.doc -23· 201207983 又，於陰極組件68之下部之排氣導管79的朝向成膜室U 内之面83上形成有開口部（未圖示），能夠將所排放之成膜氣 體等向成膜室11内排出。向虑眩玄。免糾t尸 门攻膜至11内排出之氣體自形成 於成膜室11之側面下部之貫通孔28内所設的排氣管29,而 向成膜室11之外部排氣。 又，於排氣導管79與陰極中間構件76之間，設置有具有 介電質及/或積層空間之雜散電容體82。排氣導管79係連接 於接地電位。排氣導管79亦作為用以防止自喷淋板（=陰 極)75及陰柘中間構件76之異常放電的屏蔽框而發揮功能。 進而’於陰極組件68之周緣部，以覆蓋自排氣導管79之 外周部至喷淋板（=陰極）75之周緣部的部位之方式設置有 遮罩78。該遮罩78覆蓋設於搬運器21之下述夾持部59之夾 持片59A(參照圖23)，並且形成有於實施成膜時與夾持片 5 9 A成為一體而用以將成膜空間8丨之成膜氣體或微粒導入 排氣導管79的氣體流路即，於搬運器2丨（夾持片59A)與 喷淋板75之間、及與排氣導管79之間形成有氣體流路r。 藉由設置此種電極組件3 1，於一個電極組件3 !中形成有2 處插入基板W之陽極組件90與陰極組件68之間隙。因此， 可利用一個電極組件31而同時對2塊基板W進行成膜。 又’構成為於陽極組件9 0與陰極組件6 8之間配置基板 W，陽極組件90(陽極67)與基板w抵接，並且為調整基板w 與陰極組件68之間隔距離而可移動，故藉由電漿cvr)法而 於基板W上成膜薄膜S i層時’基板W與陰極組件6 8之間隙必 須設定為5〜15 mm左右，而藉由可移動陽極67，能夠於成 156412.doc •24- 201207983 膜前後調節陽極67與陰極組件68之間隔距離。因此，可容 易地進行基板W之取出放入。又，可防止取出放入基板w 時基板W接觸於陽極67或陰極組件68而損傷之狀況。 進而，由於可使陽極67與基板W抵接，故雖一面使用加 熱器加熱基板W-面進行成膜’亦可有效地將此加熱器之 熱傳遞至基板W。因此，可實施高品質之成膜。 進而，由於構成為可自成膜室u裝卸電極組件31，故電 極組件3 1之陰極組件68及陽極組件9〇雖為除去所堆積之副 產物等而需要定期地保養，但可容易地進行保養。又，若 準備備用之電極組件31，則即便因保養而自成膜室u中卸 除電極組件，亦可藉由將備用之電極組件31代替安裝， 而可不停止生產線地進行保養。因此，可提高生產效率。 其結果為’即便於基板W上成膜低速率之半導體層時，亦 可實現高產量。 圖16、圖17係饋入/取丨室13之概略構成圖，圖16係立體 圖’圖⑽與圖16不同之另一角度觀察之立體圖。如圖16、 圖Π所示，饋人/取出室13係形成為箱型。側面〜形成有 可相對於外部而開閉之開σ32，該開π32内形成有門閥（省 略圖示)。於饋入/取出室13之與搬送室18連接之側面Μ上， 形成有3處能夠插通3個搬運器21之搬運器搬出搬入口 w。 於搬運器搬出搬入口 35内設有構成可確保 (開閉機構）19之擋板（第二開閉部）36。 氣密性之門閥 並且’於饋人/取出室13之側面下部41連接有用以對饋入/ 取出室13内進行真空排氣之排氣f42，且於排氣管^設 156412.doc -25- 201207983 有真空泵43。 再者，亦可於饋入/取出室13内設置向饋入/取出室13内喷 射含臭氧之氣體之第一含臭氧之氣體供給機構190。第二含 臭氧之氣體供給機構190包含没於外部之含臭氧之氣體供 給源198、及配设於含臭氧之氣體供給源198與饋入/取出室 13之間的含臭氧之氣體導入管199。 於饋入/取出室13之基板W之饋入/取出時，基板w、尤其 堆積於成膜處理後基板W2上之副產物會灑落而堆積於饋 入/取出室13内。 因此’根據本實施形態’並無副產物灑落而被帶入搬送 至18之狀況。由此，搬送室1 8内保持極其清潔之真空空間。 因此’搬運器21係於該搬送室18與成膜室丨丨之間交換，故 成膜室11亦保持極其清潔之真空空間，能夠於穩定之製程 條件下進行成膜等，成膜條件提高，而可進行特性優異之 太陽電池之製造。 與成膜室11之情形同樣地，於保養時，藉由第二含臭氧 之氣體供給機構190向饋入/取出室13内供給含臭氧之氣 體，而可利用含臭氧之氣體使饋入/取出室13内存在之副產 物（聚矽烷）氧化。作為聚矽烷之氧化物之矽氧化物係白色粉 末’可使用例如真空吸塵器等而容易地除去。由於並不如 先則叙使用水’故保養結束後可加快饋入/取出室〗3之啟 動。 圖18係搬運器之立體圖。如圖18所示，搬運器21形成有2 個可女裝基板w之邊框狀之框架51。即，一個搬運器21上 156412.doc ⑧ •26· 201207983 可安裝例如2塊基板Wc2個框架5l、5i係於其上部藉由連 接構件52而一體化。又，於連接構件52之上方設有載置於 移動導軌37之車輪53，且車輪53於移動導軌37上滾動，藉 此搬運器21可移動。 又，於框架51之下部，為於搬運器21移動時抑制基板^ 之搖晃而5又有框架座54，框架座54之前端係嵌合於各室之 底面上所設的剖面呈凹狀之導執構件55。再者，導軌構件 55俯視時係沿移動導執37之方向而配設。若框架座μ由複 數個輥構成，則可更穩定地搬送。 框架51分別具有周緣部57及夾持部”。基板w之被成膜 面於形成於框架51之開口部56露出，且於開口料之周緣 σρ 57，夾持部59可自兩側夾持基板w而進行固定。 並且，夾持基板W之夾持部59係藉由彈簧等之施壓力進 行運作。 又，夾持部59構成為包含抵接於基板W之表面W〇(被成 膜面）及背面wu(背面）之夾持片59A、59B(參照圖23)，該夾 持片59A、59B之間隔距離可經由彈簧等而可變動，即，對 應於陽極組件90(陽極67)之移動，夾持片59A可沿相對於夾 持片59B接近•背離之方向移動（詳細内容於下文敍述卜此 處，該搬運器21於一個移動導軌37上係安裝有丨個（可保持1 對（2塊）基板之1個搬運器）。即，於一組之薄膜太陽電池製 造裝置10中安裝有3個（保持3對6塊基板）之搬運器21。 再者，於成膜室11内無搬運器（基板）之狀態下，較佳為藉 由氮氣供給機構150向成膜室丨丨内喷射氮氣，而除去副產物 156412.doc •27· 201207983 (及/或該副產物之氧化物）。 具體而言，於成膜室11内無搬運器（基板）之狀態下暫時關 閉擋板25 ^其後，自氮氣供給源158向氮氣導入管159供給 氮氣。氮氣經由氮氣導入管159而供給至氮氣供給配管 1 5 1。然後，藉由自氮氣嗔射機構170之喷射口 175噴射氮氣 而吹飛附著於電極組件3 1或成膜室11之内壁上之副產物 (及/或該副產物之氧化物）’使其滯留於成膜室丨丨之下部。 大致同時地，驅動真空泵30進行成膜室11内之排氣，除去 該副產物（及/或該副產物之氧化物）。 再者，構成為一面藉由向成膜室1丨内噴射氮氣，例如使 成膜室11内之壓力自約1〇 Pa上升至大氣壓或接近大氣壓 (大氣壓以下）為止，一面大致同時地除去副產物即可。又， 藉由真空泵30之排氣可與氮氣之喷射開始大致同時地開始 進行，亦可自喷射氮氣開始起經過特定時間後開始進行， 還可於成膜室11内之壓力達到特定壓力（例如1〇〇 pa)以上 之階段時開始進行，也可於成膜室丨丨内之壓力達到最終壓 力後開始進行。 又，亦可重複進行氮氣之噴射及藉由真空泵3〇之排氣。 此時’亦可—面進行藉由真空㈣之排氣，-面間歇地重 複噴射氮氣複數次》 查此處’因喷射0175係、-面以第1配管171之軸以為中心 晝圓之方式旋轉-面嘴射氮氣，故可遍及較廣範圍而喷射 氮氣即’可有效地吹飛各部位上所附著之副產物（及/或該 副產物之氧化物）而進行處理。 156412.doc ⑧ -28- 201207983 該氮氣之噴射既可每批次地進行，亦可每隔數批次地定 期進行。 圖24係表示本發明之薄膜太陽電池製造裝置（成膜裝置） 之另一實施形態之概略構成圖。 於該實施形態之薄膜太陽電池製造裝置（成膜裝置）9〇中 包括：成膜室91A’其成膜由a」Si構成之頂部單元1〇2之p層 (102p)及η層（102η);成膜室91B，其成膜由a-Si構成之頂部 單元1〇2之i層（l〇2i);成膜室91C’其成膜由pc-Si構成之底 部單元104(半導體層）之p層（ι〇4ρ);及成膜室91D，其成膜 由pc-Si構成之底部單元ι〇4(半導體層）之丨層（1〇4i)、11層 (104η)。 又，該實施形態之薄膜太陽電池製造裝置（成膜裝置）9〇 包含饋入/取出室93及搬送室98。搬送室98内形成（内置）有 可沿導軌16而移動之複數個橫動裝置（第一移動機構）97、 97。該等複數個橫動裝置97可彼此獨立地個別自走，且控 制為移動時不抵接、不接觸。藉由該等複數個橫動裝置97， 而於成膜室91Α、91Β、91C、91D及饋入/取出室93之間搬 送搬運器21 〇 ~~ 又，於成膜室91Α、91Β、91C、91D、及饋入/取出室％ 與搬送室98之間，分別形成有門閥（開閉機構）99、％進 而，於該等饋入/取出室93、複數個成膜室91及搬送室98 内，分別個別地附設有真空泵（排氣機構）95a、95b、95c。 於該實施形態之薄膜太陽電池製造裝置（成膜裝置）9〇 中，將成膜膜厚必需較厚形成之底部單元1〇4(半導體層）之i 156412.doc •29· 201207983 層（1〇4i)、η層（HMn)之㈣室9删己置地多餘其他成膜室 91A、91B、91C，藉此可提高裝置整體之成膜能力，而有 效地製造事聯構造之薄膜太陽電池100。 又，藉由形成複數個橫動裝置（第一移動機構）97，可同 時且迅速地進行多種搬運器21於饋入/取出室93與成膜室 91之間的移動、及搬運器21於多個成膜室91彼此之間的移 動，從而可提高薄膜太陽電池製造裝置（成膜裝置）9〇之整體 之成膜能力。 [產業上之可利用性] 本發明可廣泛適用於使用CVD法而於基板上成膜矽膜之 成膜裝置。 【圖式簡單說明】 圖1係表示薄膜太陽電池之一例之概略剖面圖； 圖2係本發明之實施形態之薄膜太陽電池製造裝置（成膜 裝置）之概略構成圖； 圖3係本發明之實施形態之成膜室之立體圖； 圖4係本發明之實施形態之成膜室的自另一角度觀察之 立體圖； 圖5係本發明之實施形態之成膜室之側視圖； 圖6係本發明之實施形態之成膜室之透視圖（立體圖）； 圖7係本發明之實施形態之成膜室之透視圖（側視圖）； 圖8係本發明之實施形態之成膜室之透視圖（自饋入/取出 室側觀察的前視圖）； 圖9係本發明之實施形態之氮氣喷射機構之立體圖； 156412.doc ⑧ •30· 201207983 圖10係沿圖9之A-A線之剖面圖； 圖11係本發明之實施形態之氮氣喷射機構之前視圖； 圖12係本發明之實施形態之電極組件之立體圖； 圖13係本發明之實施形態之電極組件的自另一角度觀察 之立體圖； ' 圖14係本發明之實施形態之電極組件之部分分解立體 圖， 圖1 5係本發明之實施形態之電極組件的陰極組件及陽極 組件之部分剖面圖； 圖1 6係本發明之實施形態之饋入/取出室之立體圖； 圖1 7係本發明之實施形態之饋入/取出室的自另一角度 觀察之立體圖； 圖18係本發明之實施形態之搬運器之立體圖； 圖1 9A係表示本發明之實施形態之搬運器的移動狀況之 說明圖； 圖19B係表示本發明之實施形態之搬運器的移動狀況之 說明圖； 圖19C係表示本發明之實施形態之搬運器的移動狀況之 說明圖； • 圖20係表示本發明之實施形態之薄膜太陽電池之製造方 法的過程之說明圖，且係當基板插入至電極組件時之概略 剖面圖； 圖21係表示本發明之實施形態之薄膜太陽電池之製造方 法的過程之說明圖； 156412.doc -31· 201207983 圖22係表示本發明之實施形態之薄膜太陽電池之製造方 法的過程之說明圖； 圖23係表示本發明之實施形態之薄膜太陽電池之製造方 法的過程之說明圖，且係基板設置於電極組件時之部分剖 面圖；及 圖24係表示本發明之實施形態之薄膜太陽電池製造褒置 的另一態樣之概略構成圖。 【主要元件符號說明】 10 薄膜太陽電池製造裝置（成臈裝 11 成膜室 13 饋入/取出室 17 橫動裝置（第一移動機構） 18 搬送室 19 門閥（開閉機構） 21 搬運器 30 、 43 、 50 真空泵（排氣機構） 156412.doc '32.201207983 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a film forming apparatus for a solar cell. Priority is claimed on Japanese Patent Application No. 2010-118336, the entire disclosure of which is incorporated herein by reference. [Prior Art] Among the current solar cells, most of the solar cells use single crystal germanium (Si) or polycrystalline germanium crystal cells, which are widely distributed in the market. However, the shortage of materials in §1 is worrying. The demand for thin film solar cells using thin film crucibles, which are less risky to manufacture and less material, continues to increase. Further, each company is actively making the following attempts: In addition to the previously widely used single-junction type thin-film solar cells using only the amorphous a-Si layer, a_Si layer and microcrystalline 矽bc_Si have recently been studied. Stacked multi-junction solar cells (such as tandem thin-film solar cells) to improve conversion efficiency. In the case of forming a photoelectric conversion layer (power generation layer) of a thin film solar cell, an electropolymerization cvD (Chemical Vapor Deposition) device (film formation device) is often used, specifically The rupture CVD apparatus can be exemplified by, for example, a monolithic PE-CVD (plasma c VD) device, a continuous pE_cVD device, and a batch type PE-CVD device (for example, refer to Patent Document 丨, 2). However, the electropolymer (10) device (film forming device) previously used for mass production of thin-film solar cells is a chamber in which a feed-in/out chamber and a film-forming chamber are directly connected, for example, via a gate valve. In the film forming apparatus constructed in such a chamber, when the substrate is taken out from the feeding/removing chamber or the substrate is placed in the feeding/extracting chamber, the feed 156412 must be changed. Doc 201207983 The gas environment of the inlet/exit chamber is changed from the vacuum state to the atmospheric pressure state, or from the atmospheric pressure state to the vacuum state. Therefore, each time the substrate is moved between the feeding/extracting chamber and the film forming chamber, the unstable gas in the feeding/extracting chamber is brought into the film forming chamber, and as a result, the film forming chamber is affected. It is difficult to form a film under a stable environment and without filming under controlled conditions. Further, in the case of processing a plurality of large plates at one time, it is extremely difficult to efficiently perform the change operation (operation) of the gas environment as described above. [Previous Technical Literature] [Patent Literature] [Patents [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. 5-63223 [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei No. Hei. As a result, the object of the invention is to provide a sputum-forming device that can move the substrate in the film-forming chamber without affecting the gas environment change of the feeder/outtake, and can simultaneously perform a plurality of different production efficiencies. [Technical means to solve the problem] To solve the above problems. Some aspects of the present invention provide a film forming apparatus having a built-in Si as follows: a transfer chamber structure, a (four) substrate carrier and a self-propelled first-moving structure, a feed/extraction chamber, and a plurality of film forming chambers, which are attached to the transfer chamber 156412. Doc 201207983 is configured by an individual opening and closing mechanism; and an exhaust mechanism is separately attached to the transfer chamber, the feeding/extracting chamber, and the film forming chamber; and is provided in each of the plurality of film forming chambers A film forming apparatus for forming a film on the substrate. In the above aspect, the first moving mechanism further includes a second moving mechanism that transports the carrier to the moving between the film forming chamber. In the above aspect, the plurality of carriers are provided, and the second moving mechanism simultaneously moves the plurality of carriers. In the above-described sample, the film forming chamber includes a heating mechanism of the substrate. In the above aspect, the carrier is held in a gravity direction by the surface of the substrate, and the first moving mechanism can mount a plurality of the carriers. In the above aspect, the carrier can hold a plurality of the substrates. In the above aspect, a plurality of the first moving mechanisms are built in the transfer chamber. In the above aspect, 'a plurality of film forming chambers' are provided on both sides of the transfer chamber, and the first moving mechanism can be taken out or placed in the carrier in two directions different from each other. In the above aspect, the film forming mechanism can simultaneously form a plurality of substrates. In the above, the film formation mechanism includes a plurality of cathode electrodes and a plasma CVD mechanism provided on the anode electrodes on both sides of the cathode electrodes. In the above aspect, the substrate is held by the carrier in such a manner that its surface is in the direction of gravity, and the cathode electrode and the anode electrode are 1564I2. Move in/out between doc 201207983. In the above J sample, the above film is used for a microcrystalline germanium film of a solar cell. In the above I, the film forming apparatus includes another film forming chamber in which a film of a different type from the film forming chamber is formed. In the above I, the film forming apparatus includes another film forming chamber in which a film of the same type as the film forming chamber is formed. [Effect of the Invention] When the carrier moves between the feeding/extracting chamber and the film forming chamber, or when the carrier moves between the film forming chambers, the carrier is detachable via the vacuum environment and is movable. The transfer chamber of the first moving mechanism is performed, and the carrier is placed in the vacuum by maintaining the vacuum (four) by connecting the opening and closing mechanism between the first moving mechanism and the feeding/extracting chamber or the film forming chamber. By moving between the chambers, the plurality of carriers holding the substrate are continuously and sequentially supplied, so that film formation can be performed on the substrate in a short time and efficiently. [Embodiment] A film forming apparatus according to an embodiment of the present invention will be described below. Further, the present embodiment is intended to better understand the gist of the present invention, and the present invention is not limited to the present invention unless otherwise specified. In addition, the drawings used in the following description are for easy understanding of the features of the present invention, and in some cases, they may be enlarged as a part of the main part, and the ratio or the like is not limited to the actual one. First, the thin film solar cell produced by film formation using the film forming apparatus of the present embodiment will be described as an example of a tandem type. However, the use of the film forming apparatus of the present invention is not limited to the tandem type. . 156412. Doc 201207983 (Thin film solar cell) Figure 1 is a cross-sectional view of a thin film solar cell. As shown in FIG. 1, for example, a tandem type thin film solar cell 100 includes a substrate W including a surface and an upper electrode 1 〇1 of a transparent conductive film provided on the substrate W; and an amorphous stone (a_s〇) The top unit 102; the intermediate electrode 103 including a transparent conductive film disposed between the top unit 102 and the bottom unit 104; the bottom unit (microcrystalline germanium film) 1〇4 composed of microcrystalline germanium (pc_si); a buffer layer 105 of a transparent conductive film; and a back electrode 1〇6 including a metal film. That is, the thin film solar cell 1 includes a top unit 1 a2 of a_Si and includes gc-Si as viewed from a sunlight incident side. The bottom unit 104 is stacked and laminated, and absorbs short-wavelength light by the top unit 102 and long-wavelength light by the bottom unit i〇4, thereby improving power generation efficiency. The p-layer of the top unit 102 (l〇 2p), i layer (i〇2i), n layer (ι〇2η) three-layer structure is formed by a-Si. In addition, the bottom unit 1〇4 ρ layer (1〇4ρ), 丨 layer (1〇 4i), the 3-layer structure of the η layer (104η) is composed of pC_si. The thin film solar cell constructed in this way 1〇 When the energy particles of the bright photons contained in the sunlight collide with the i-layer, 'electrons and holes are generated by the photovoltaic effect, and the electrons move to the n-layer, and the holes move toward the p-layer. The electrons generated by the effect are swept out by the upper electrode 1〇1 and the back electrode 1〇6 and can convert the light energy into electrical energy. Also, by the middle between the top unit 102 and the bottom unit 1〇4 A portion of the light of the electrode 103' that reaches the bottom unit 1〇4 through the top unit 102 is reflected by the intermediate electrode 103 and is again incident on the side of the top unit 1〇2, thereby contributing to an improvement in the sensitivity characteristics of the unit and an improvement in power generation efficiency. . Doc 201207983 Further, the sunlight incident from the side of the glass substrate w passes through each layer and is emitted by the back electrode 106. In order to improve the conversion efficiency of light energy, the thin film solar cell 100 preferably employs a texture structure for realizing a 稜鏡 effect and a light blocking effect of extending the path of sunlight incident on the upper electrode 101. (Manufacturing Apparatus of Thin Film Solar Cell) Fig. 2 is a view showing the overall configuration of a manufacturing apparatus of a thin film solar cell as an example of the film forming apparatus of the present invention. As shown in FIG. 2, the manufacturing apparatus (film forming apparatus) 10 for thin-film solar cells includes a transfer chamber 18 in which a traverse device capable of self-propelled is placed on a carrier 21 on which a substrate W is placed. A moving mechanism) 17. Further, a feeding/extracting chamber 13 and a plurality of film forming chambers η are formed via an individual door valve (opening and closing mechanism) 19 so as to communicate with the transfer chamber 18. Vacuum pumps (exhaust mechanisms) 3, 43, and 50 are separately attached to the feed-in/out-out chamber 13, the plurality of film forming chambers 11, and the transfer chambers 8, respectively. A plurality of film forming chambers 11, 11 are sandwiched between the transfer chambers 18 and formed on both sides. Further, the traverse device (first moving mechanism) 7 is configured such that the carrier 21 can be delivered to both of the two film forming chambers ji which are formed on both sides with respect to the pinch transfer chamber 18 The carrier 21 can be taken out in two directions different from each other. The film forming chambers 11, 11 are film forming chambers in which a plurality of substrates W are simultaneously formed by a CVD method, and include a film forming chamber 11A which forms a p layer of the top unit 102 composed of a-Si ( I〇2p) or n layer (1〇2n); film forming chamber 11B, which forms an i layer (l〇2i) of the top unit 102 composed of a-Si; and a film forming chamber lie, which is formed by a pc The p-layer (1〇4p), the layer (104i), and the η layer (104η) of the bottom unit ι〇4 (semiconductor layer) composed of -Si. 156412. Doc 201207983 Further, in the film forming chamber 11A, a heater (heating means) for heating the substrate w to a specific film forming temperature can be formed. The heater (heating means) is heated, for example, by heating the substrate in the first film forming step, and forming a film in the film forming chamber 11B and the film forming chamber 11C thereafter, and also by temperature. The temperature gradient is gradually lowered and film formation is performed while maintaining the residual heat at a high temperature. The feeding/extracting chamber 13 includes a feeding chamber 13A that feeds the substrate w with respect to the carrier 21, and a take-out unit 13B that takes out the filmed substrate w from the carrier 21. The transfer chamber 18 is formed in a substantially rectangular shape so that the inside thereof can be in a vacuum state, and a guide rail 16 is disposed, for example, along the longitudinal direction thereof, and a traverse device (first moving mechanism) 17 is formed to be movable along the guide cymbal 6. The traverse device (first moving mechanism) 17 mounts the carrier 21 and linearly moves along the guide rails 16, and transports the carrier 21 between the film forming chambers 11 and the feeding/extracting chambers 13. The traverse device (first moving mechanism) 17 is provided with a plurality of carriers 21 or a plurality of carriers 2 。. Thereby, a plurality of carriers 21 can be simultaneously transported between the film forming chamber 丨丨 and the feeding/extracting chamber 13 . An exhaust pipe for vacuum evacuation (not shown) is connected to the transfer chamber 18, and a vacuum pump 5 () is provided through the exhaust pipe. The transfer chamber including the t-field and the movable split (first moving mechanism) 17 is placed in a vacuum state by such a real work 50'. The film formation 11 and the feeding/extracting chamber 13 are disposed adjacent to the position (facing position) of the transfer chamber 18, and the film forming chambers 11A, 11B, and 11C and the feeding chamber 13B are fed to the 13A. The door 1564I2 is formed between the transfer chambers 18 respectively. Doc 201207983 Valve (opening and closing mechanism) 19 can be connected. When the door valve (opening and closing mechanism) 19 exchanges the carrier 21 between the film forming chamber 11 and the feeding/unloading chamber 13 and the traverse device 17, the vacuum bears are maintained, that is, the film forming chamber 11 and the feeding/ It is sufficient to take out the airtight door in which the chamber 13 and the transfer chamber 18 are opened in a vacuum state. In the traverse device (first moving mechanism) 17, one or a plurality of transports can be formed between the film forming chamber η and the feeding/extracting chamber 13 and the traverse device 17 via the gate valve (opening and closing mechanism) 19. The plugging device of the device 21 (the second moving mechanism drives the plugging device (second moving mechanism) 15 in a state where the door valve (opening and closing mechanism) 19 is open, and is placed on the traverse device (first moving mechanism) via the gate valve 19 The carrier 21 of 17 is fed to the film forming chamber u and the feeding/extracting chamber 13. Further, the film forming chamber u and the carrier in the feeding/extracting chamber 13 are pulled through the gate valve 19 and placed in the traverse Device 17. The step of forming a film on the substrate W (the operation of the film forming apparatus) using the manufacturing apparatus (film forming apparatus) of the thin film solar cell of the present embodiment described above will be described. The film formation on the substrate W accommodated in a specific carrier is described. However, it is also possible to form a film while moving the plurality of carriers 21 in sequence. For example, as shown in FIG. The substrate w is mounted on the carrier 2 设置 provided in the feeding chamber 。. The substrate w is attached to the carrier, and for example, an arm robot can be used to take out the substrate W one by one from a box (not shown) in which a plurality of substrates w are accommodated. The paper surface of Figure 2 can be installed in the depth direction. Moreover, it is configured to be divided into 156,412 in each longitudinal direction of each carrier 21. Doc 201207983 Do not install a plurality of blocks, for example, two substrates W. Next, as shown in Fig. 19A, the traverse device (the first moving mechanism) 17 accommodated in the transfer chamber 18 is moved away along the guide rail 16 and moved to a position (adjacent) to the feed chamber 丨3A. Then, the transfer chamber 18 and the feed chamber 13A are kept in a vacuum state. The door valve (opening and closing mechanism) 19' that separates the transfer chamber 18 from the feed chamber 13A is opened, and the transfer chamber 18 and the feed chamber 13A are communicated in a vacuum state. Next, as shown in Fig. 19B, the carrier 21 in the feeding chamber 13A is pulled by the gate valve 19 by the insertion device (second moving mechanism) 15 formed in the traverse device (first moving mechanism) 17 Placed in the traverse device 17. As shown in Fig. 19C, when the carrier 21 is placed on the traverse device 17, the door valve (opening and closing mechanism) 19 is closed again. Then, the traverse device 17 is caused to travel along the guide rail 16 to, for example, a position opposite to (adjacent to) the film forming chamber 11A. On the other hand, after the feed valve 13A in which the gate valve (opening and closing mechanism) 19 is closed becomes the atmospheric pressure state again, the step of accommodating the substrate w before the film forming process on the other carrier 21 can be performed. When the moving device 17 is adjacent to the film forming chamber 11A', the transfer chamber 18 and the film forming chamber 11A are kept in a vacuum state, and a gate valve (opening and closing mechanism) 19 that separates the transfer chamber 18 from the film forming chamber UA is opened, and the transfer chamber 1 is moved. 8 is connected to the film forming chamber 1A in a vacuum state. Then, the carrier 21 placed on the traverse device 17 is moved to the film forming chamber ha via the gate valve 19 by the insertion device (second moving mechanism) 15' formed in the traverse device (first moving mechanism) 17. Inside. The carrier 21 holding the substrate wi before the film forming process is moved to the film forming chamber n (11A) by using the insertion/removal device (second moving mechanism) 15, and the shutter 25 is brought into a closed state after the end of the movement. Furthermore, the film formation chamber is kept in a vacuum 156412. Doc •11· 201207983 State. In this case, the substrate W1 attached to the carrier 21 before the film formation process is inserted into the film forming chamber 11 in the direction of the plumb direction (longitudinal direction) so that the surface WO is in the anode assembly (anode) constituting the film forming mechanism. The electrode 90 and the cathode assembly (cathode electrode) 68 are formed to be substantially parallel to the direction of gravity (see FIGS. 20 and 21). The anode assembly (anode electrode) 90 is formed on both sides of a plurality of cathode assemblies (cathode electrodes) 68, respectively, thereby constituting a plasma cVD mechanism. Furthermore, the anode assembly (anode electrode) 9 构成 and the cathode assembly (cathode electrode) 68 constituting such a film formation mechanism can be formed by a plurality of substrates w inserted into the film formation chamber 11 at the same time. 20. As shown in FIG. 21, the two anode assemblies 90 of the moving electrode assembly 31 are moved in the direction in which they approach each other by the driving device 71, so that the anode assembly 90 (anode 67) and the back surface of the substrate W1 before the film formation process are wu. Abut. As shown in Fig. 22, when the driving device is further driven, the substrate W1 before the film formation process is pressed by the anode 67 and moved toward the cathode assembly 68 side. Further, the movement is made such that the gap between the substrate W1 before the film formation process and the shower plate 75 of the cathode assembly 68 becomes a characteristic distance (film formation distance). Further, the gap between the substrate and the shower plate 75 of the cathode assembly 68 (film formation distance) may be about 5 to about the claw (7), for example, about 5 mm. At this time, the holding piece 59A of the nip portion 59 of the carrier 21 on the surface wo side of the substrate wi is displaced in accordance with the movement of the substrate (anode assembly 9A) before the film formation process. Further, when the orientation of the anode assembly is moved away from the cathode assembly, the restoring force of the spring or the like acts on the holding piece 59A to be displaced toward the holding piece 59B side. At this time, the substrate before film formation - by the anode ο 156412. Doc 201207983 and the holding piece 59A are sandwiched. If the substrate W1 moves toward the cathode unit 68 side before the film formation process, the holding piece 59A abuts against the mask 78, and the movement of the anode unit 9 is stopped (refer to FIG. 23). ). Here, as shown in FIG. 23, the mask 78 is formed so as to cover the surface of the missing piece 59A and the outer edge of the substrate w, and is formed to be in close contact with the outer edge of the holding piece 59α or the substrate w. . That is, the joint surface of the mask 78 and the outer edge portion of the holding piece 59 or the substrate w has a sealing surface so that the m gas is not substantially removed from the mask 78 and the holding piece 59A or the substrate w. The edge portion leaks toward the anode 67 side. Thereby, the range in which the film forming gas is diffused is limited, and the film formation in an unnecessary range can be suppressed. Thereby, the cleaning range can be reduced and the cleaning frequency can be reduced. Further, since the movement of the substrate before the film formation process is stopped by the outer edge of the substrate w contacting the mask 78, the gap between the mask 78 and the shower plate and the exhaust pipe 79, that is, the gas flow path R The flow path height in the thickness direction is set so that the gap between the front substrate W1 and the cathode assembly 68 becomes a specific distance before the film formation process. Alternatively, the distance between the substrate W and the shower plate 75 (= cathode) may be arbitrarily changed by the stroke of the driving device 71 by attaching the mask to the exhaust duct 79' via the elastic body. In the above description, the case where the mask is in contact with the substrate W is described. However, the mask 78 and the substrate w may be disposed so as to be able to restrict the passage of the film forming gas. In this state, the film forming gas is ejected from the shower plate 75 of the cathode assembly 68, and the matching box 72 is activated to apply the 156412 to the shower plate (= cathode) 75 of the cathode block 68. Doc 201207983 A voltage is applied to cause plasma to be generated in the film formation space 81, and a film WO is formed on the surface WO of the substrate Wi before the film formation process. At this time, the substrate before the film formation process is heated to a desired temperature by a heater (heating means) built in the anode 67. Here, if the substrate W1 before the film forming process is heated to a desired temperature, the anode assembly 90 stops heating. However, plasma is generated in the film forming space 81 due to the application of a voltage to the cathode assembly 68. Over time, due to the heat input from the plasma, even if the anode assembly 90 stops heating, the temperature of the substrate W1 before the film formation process rises to exceed the desired temperature. In this case, the anode assembly 9G can also function as a heat sink for cooling the front substrate W1 before the wire is excessively raised in temperature. Therefore, the substrate W1 before the film formation process can be maintained at a desired temperature without elapse of the time of the film formation process. After the film formation and film formation, the gas or by-product of the film formation space 81 is discharged from the exhaust port 80 formed at the peripheral portion of the cathode assembly 68, and the discharged gas is supplied from the cathode assembly via the gas flow path R. The exhaust duct 79 of the peripheral portion of the 68 passes through the opening (the opening formed on the surface 83 of the exhaust duct 79 which is formed at the lower portion of the cathode assembly 68 toward the film forming chamber 11), and is formed in the film forming chamber. The exhaust pipe 29 provided in the through hole 28 at the lower side of the side surface is exhausted to the outside. When the film formation is completed, the two anode assemblies 9 are moved away from each other by the driving device 71, and the film-forming substrate W2 and the frame 5" holding sheet 59A are returned to their original positions (refer to Fig. 21). Figure 22). Further, by moving the anode assembly 90 in the facing direction, the substrate W2 is separated from the anode assembly 90 after the film formation process (see Fig. 2A). When the film formation of the substrate W in the film forming chamber 11A is completed, the film is placed in the transport 156412. Doc 8 14· 201207983 The traverse device (first moving mechanism) 17 in the chamber 18 moves away along the guide rail 16 and moves to a position opposite (adjacent) to the film forming chamber 11A. Then, the transfer chamber 18 and the film formation 11A are kept in a vacuum state, and a gate valve (opening and closing mechanism) 19' that separates the transfer chamber μ from the film forming chamber 11A is opened to allow the transfer chamber 18 and the film forming chamber UA to communicate in a vacuum state. Then, by the insertion/removal device (second moving mechanism) 形成5 formed in the traverse device (first moving mechanism) 17, the carrier 21 in the film forming chamber 11A is pulled through the gate valve 而9 and placed thereon. Traverse device 17. When the carrier 21 is placed on the traverse device 17, the gate valve (opening and closing mechanism) 19 is closed again. Further, the traverse device 17 is self-propelled along the guide 16 to, for example, a position opposite to (adjacent to) the film forming chamber 11B. On the other hand, the film forming chamber UA can perform a film forming process on the substrate w placed on the next other carrier 21. By repeating the above procedure, the p layer (1〇2p) and the η layer (1〇2η) β of the top unit 102 composed of a-Si as shown in the film forming chamber 11A are formed in the film forming chamber 11A. The film layer (i〇2i) of the top unit composed of a_si is formed into the film within 11 inches. Further, a p-layer (104p) and an i-layer (l〇4i) of the bottom unit 1〇4 (semiconductor layer) composed of pc-Si are formed in the film forming chamber 11C. ! layer (ι〇4η). Then, the carrier 21 containing the substrate W on which the film formation has been completed is moved to the take-out chamber 13A, and the substrate W after the film formation is taken out from the thin film solar cell manufacturing apparatus (film forming apparatus). When the carrier 21 moves between the feeding/removing chamber 13 and the film forming chambers π, u, or when the carrier 21 moves between the film forming chambers π and 丨丨, it is downloaded via a vacuum environment. The carrier 21 is moved by the transfer chamber 18 of the movable traverse device (first moving mechanism) 17 and communicates between the traverse skirt 17 and the feed/extract chamber 13 or the film forming chamber 经由. The door valve (opening and closing mechanism) 19 maintains the vacuum state and moves the carrier 21 between the chambers by borrowing 156412. Doc -15·201207983 This allows a plurality of carriers 2i holding the substrate w to be continuously and sequentially supplied, so that film formation can be efficiently performed on the substrate w in a short time. In particular, between the feeding/extracting chamber 13 and the film forming (four), a transfer chamber 18 having a movable traverse device (first moving mechanism) 17 for downloading the carrier 21 in a vacuum environment is included, thereby being stable Film formation was carried out under the conditions of film formation under controlled conditions. That is, as in the case where the chamber between the feeding/removing chamber and the film forming chamber 11 is directly connected via the gate valve, the substrate W is taken out from the feeding/extracting chamber 13 or placed in the feeding/extracting chamber 13 In the substrate material, it is necessary to change the gas atmosphere in the feeding/extracting chamber 3, that is, to change the feeding/extracting chamber 13 from the vacuum state to the atmospheric pressure state, or to change from the atmospheric pressure state to the vacuum state. Therefore, each time the substrate is moved between the feeding/extracting chamber 13 and the film forming chamber 12, the unstable gas atmosphere in the feeding/extracting chamber 13 is brought into the film formation to 11, and the result is The film formation chamber U is affected, and it is difficult to form a film under a controlled film formation condition under a stable environment. However, as in the film forming apparatus of the present embodiment, a transfer chamber 18' capable of moving the carrier 21 in a vacuum environment is formed between the feeding/extracting chamber 13 and the film forming chamber 11, thereby reliably preventing self-feeding The extraction chamber 13 takes out the substrate w or the gas atmosphere in the feeding/extracting chamber 13 which becomes unstable when the substrate W is placed in the feeding/extracting chamber 13 is brought into the film forming chamber. Thereby, the environment in the film forming chamber 11 is always kept constant, so that film formation can be performed on the substrate w under a stable environment and under controlled film forming conditions. 3 to 5 are schematic views showing an example of a film forming chamber, and Fig. 3 is a perspective view. Fig. 4 is a perspective view from another angle different from Fig. 3, and Fig. 3 is a side 156412. Doc 8 •16· 201207983 View. As shown in FIGS. 3 to 5, the film forming chamber 11 is formed, for example, in a box shape. On the side surface 23 of the film forming chamber which is connected to the transfer chamber 18, three carrier carry-in/out ports 24 through which the carrier 21 of the substrate W is placed are formed. Further, a part of the door valve (opening and closing mechanism) 19 that opens or closes the carrier loading/unloading port 24 is provided in the transporting/unloading port 24 of the transporter. When the gate valve 19 and the shutter 25 are closed, the carrier loading/unloading port 24 is closed to ensure airtightness. "On the side surface 27 facing the side surface 23, for example, three electrodes for mounting the substrate W are formed. 3 1. The electrode assembly 3 1 is configured to be detachable from the film forming chamber 11. Further, in the through hole 28 formed in the lower portion of the side surface of the film forming chamber u, an exhaust pipe 29 for evacuating the inside of the film forming chamber is connected, and a vacuum pump 30 is provided in the exhaust pipe 29. The first film-containing apparatus (film forming apparatus) of the four-film solar cell may further include a first ozone-containing gas supply mechanism 180 that can introduce a gas containing ozone (〇3) into the film forming chamber. Further, at the time of maintenance of the apparatus, the ruthenium film, particularly the film containing the microcrystalline ruthenium (the p-layer of the bottom unit 104 (l〇4p)) is introduced into the film formation chamber 上述. The ruthenium layer (1〇4〇, 11 layer (1〇4n)) is formed by oxidation of a by-product containing polydecane which is formed into a film to form a cerium oxide. As shown in Fig. 5 to Fig. 7, A first ozone-containing gas supply mechanism 18 that introduces an ozone-containing gas into the film formation chamber is provided in the film formation chamber. The first ozone-containing gas supply mechanism 180 includes an ozone-containing gas disposed outside. A gas supply, a source 188, and an ozone-containing gas introduction pipe 189 disposed between the ozone-containing gas supply source 丨 and the film forming chamber 11. 156412. Doc 17 201207983 It is necessary to perform maintenance on a regular basis in order to remove by-products and the like accumulated in the film forming chamber 11, and to supply the ozone-containing gas to the film forming chamber by the first ozone-containing gas supply mechanism 于8〇 during maintenance. In the case of 11, the by-product (polydecane) deposited in the film forming chamber 11 can be oxidized by the ozone-containing gas. Since the polydecane-based brown powder which is the by-product is flammable, it is necessary to pay attention to the operation, and the cerium oxide which is an oxide of polydecane is a white powder and does not have flammability. Therefore, for example, a vacuum cleaner or the like can be used. Easily removed The film forming apparatus 10 can quickly and easily process by-products generated at the time of film formation of the ruthenium film. Further, since the water is not used as before, the start of the film forming chamber 11 can be accelerated after the maintenance is completed. Further, as shown in FIG. 6 to FIG. 8, a nitrogen gas supply mechanism 150 for injecting nitrogen into the film forming chamber u may be provided in the film forming chamber u. The nitrogen gas supply mechanism 15 includes a nitrogen gas supply source 15 provided outside. A nitrogen gas introduction pipe 159 provided between the nitrogen gas supply source 丨58 and the film formation chamber 11, and a nitrogen gas supply pipe 155 connected to the nitrogen gas introduction pipe 159. The nitrogen gas supply pipe 151 is placed in the film forming chamber ,, and the first supply pipe 151 & and the second supply pipe 15 ib for injecting nitrogen gas are contained in the film forming chamber "in the film forming chamber". The third supply pipe 1 5 1 c and the fourth supply pipe 15 1 d for jetting the gas are provided below. The first supply pipe 151a is extended from the connecting flange 152 provided on the upper surface of the film forming chamber 11. The upper portion of the film forming chamber u is disposed along the forward direction of the carrier 21. The second supply pipe 15 lb is provided in the same manner as the first supply pipe 151 & Doc 8 201207983 The connecting flange 153 of the upper surface of the film 11 is extended and arranged in the upper direction of the film forming chamber in the forward direction of the carrier 21. Further, the second supply pipe 15 1 b is matched The electrode assembly 31 is disposed at a position that is substantially the same as the height of the first supply pipe 丨51a, and is disposed at a position opposite to the first supply pipe 丨5丨& The third supply pipe 151c extends from the connecting flange 155 provided on the upper surface of the film forming chamber ,, and extends toward the lower portion of the film forming chamber u at a position that does not interfere with the electrode assembly 31, and is formed in the film forming chamber 11 The lower side is disposed along the forward direction of the carrier 2丨. Similarly to the third supply pipe 151c, the fourth supply pipe I51d extends from the connection flange 155 formed on the upper surface of the film formation 11 to the lower portion of the film formation chamber π so as not to interfere with the electrode assembly 31. The lower portion of the film forming chamber is disposed along the forward direction of the carrier 21. Further, the fourth supply pipe 1 5 1 d is disposed at a position opposed to the third supply pipe 15 1 c by interposing the electrode assembly 31. A nitrogen gas injection mechanism 170 that can spray nitrogen gas in a desired direction is appropriately disposed in the first supply pipe 1518 to the fourth supply pipe 151d. Figure 9 is a perspective view of a nitrogen sparging mechanism 170. Figure 1 is a cross-sectional view taken along line A-A of Figure 9, and Figure 11 is a front view of the nitrogen sparging mechanism 170. As shown in FIG. 9 to FIG. 11, the nitrogen gas injection mechanism 170 includes a first pipe 171 extending in a direction substantially perpendicular to the axial direction of the first supply pipe 151a to the fourth supply pipe 151d, and the first pipe 171 is The second pipe 172 that is connected to the first pipe 171 in the axial direction and that is rotatably connected to the first pipe 171, the third pipe 173 that is connected to the second pipe 172 so as to be orthogonal to the axial direction, and the third pipe 173 are disposed in the third pipe 173. The injection port structure 156412 of the injection port 175 is included at both ends of the axial direction. Doc •19· 201207983 Article 1 76. Further, a nitrogen gas discharge hole 177 different from the injection port 175 is formed in each of the two injection port members 176. Further, a bearing 178 is interposed between the first pipe m and the second pipe 172. Here, the ejection directions of the two ejection ports 175, 175 provided in the nitrogen gas ejecting mechanism 17 are arranged in different directions. Further, the injection directions of the two nitrogen gas discharge holes 177, 177 provided in the nitrogen gas injection means 170 are also arranged in different directions. Further, the injection ports 175 and the nitrogen gas discharge holes 177 are formed as a second pipe when the nitrogen gas is injected! 72 is rotated with respect to the i-th pipe 171 via the bearing 178, that is, torque is generated. By configuring the nitrogen gas injection mechanism 17A in this manner, when nitrogen gas is supplied from the nitrogen gas supply source 158, nitrogen gas is ejected from the injection port 175 and the nitrogen gas discharge port. At the same time, the nitrogen gas is injected from the injection port 175 and the nitrogen gas discharge hole 177 in different directions, so that the second pipe 172, the third pipe 173, and the injection port member 176 are rotated with respect to the first distribution f 171. That is, the injection port 175 is provided with the __ face and the 丄. The axial direction of the piping 151a to the fourth supply pipe 151d is orthogonal to the axial direction of the pipe 151d, and in other words, the rotating surface is circulated so that the axial direction of the first pipe 丨71 is rounded, so that it can spread over a wide range. Spray nitrogen. Therefore, the ejection port 175 is appropriately positioned to the position of the electrode assembly 31 and the position on the inner wall of the film formation $11 as a by-product (aggregate). Thereby, the particles can be effectively treated. The nozzle e is the same as the injection direction of the slit 175, and it is not necessary to provide the nitrogen b out hole 177. Conversely, if the nitrogen gas discharge hole 177 is formed to generate a torque, it is not necessary to make the injection direction of the injection port 175 face different directions 156412. Doc 8 •20· 201207983 To. Further, in the present embodiment, the case where two injection ports 175 are provided in one nitrogen injection mechanism 170 has been described. However, one or more injection ports 175 may be provided. 12 to 15 are schematic views of the electrode assembly 31, Fig. 12 is a perspective view, and Fig. 13 is a perspective view from another angle different from Fig. 12, Fig. 14 is a partially exploded perspective view of the electrode assembly 31, and Fig. 15 is a cathode Partial cross-section of the assembly and anode assembly. As shown in Figs. 12 to 15, the electrode assembly 31 is configured to be detachably attached to the three opening portions 26 formed by the side faces 27 of the film forming chamber 11 (see Fig. 4). The electrode assembly 31 is configured to be provided with a wheel 6 at the bottom and movable on the bottom surface. Further, in the women's clothing, the bottom plate portion 62 of the wheel 61 is provided with a side plate portion 63 in the vertical direction of the ship. The side plate portion 63 has a size that closes the opening portion 26 of the side surface 27 of the film forming chamber. As shown in Fig. 14, the bottom plate portion 62 to which the wheel 61 is attached may be a frame structure that can be separated and connected to the electrode assembly 31. By providing such a separable frame structure, the film forming chamber 11 is connected to the electrode assembly 3, and the frame is separated, and the frame can be used as a common frame for the movement of the other electrode units 31. That is, the side plate portion 63 is a part of the wall surface of the film forming chamber 11. On one of the side plates 63 (the inner surface facing the film forming chamber) 65, an anode assembly 9A and a cathode assembly 68 which are located on both sides of the substrate W during film formation are provided. In the electrode assembly 31 of the present embodiment, the cathode assembly 68 is sandwiched, and the anode assembly 9A is disposed on both sides, and the two substrates W can be simultaneously formed by one electrode assembly 31. Therefore, the substrate w is disposed on the both sides of the cathode assembly 68 so that the film formation surface is substantially parallel to the direction of gravity, and the two anode assemblies 90 are disposed on the outer side in the thickness direction of each substrate w to each of the I56412. Doc •21 · 201207983 The substrate W is placed in the opposite direction. Further, the anode assembly 90 is constructed by a plate-shaped anode 67 and a heater (heating mechanism) built in the anode assembly 9A, and is mounted on the other side 69 of the side plate portion 63 to drive the anode assembly 90. The driving device 71 and the matching box 72 for supplying power to the cathode intermediate member 76 of the cathode assembly 68 during film formation. Further, a connecting portion (not shown) for piping for supplying the film forming gas to the cathode assembly 68 is formed on the side plate portion 63. A heater (heating mechanism) is built in the anode assembly 90 as a temperature control mechanism for controlling the degree of the substrate W. Further, the two anode assemblies 90 and 90 are configured to be movable toward and away from each other (horizontal direction) by the driving device 71 provided in the side plate portion 63, and the distance between the substrate and the cathode assembly 68 is controllable. Specifically, when the substrate w is formed, the two anode modules 9A and 90 are moved in the direction of the cathode assembly 68 to be in contact with the substrate w. Further, the distance between the substrate w and the cathode assembly 68 is adjusted to a desired distance by moving toward the cathode assembly 68. Thereafter, film formation is performed, and after the film formation is completed, the anode modules 90, 90 are moved away from each other, and the substrate W can be taken out from the electrode assembly 31. Further, the anode assembly 90 is attached to the driving unit 71 via a hinge (not shown), and can be rotated (opened) to the anode assembly 90 (anode 67) in a state where the film assembly 11 is pulled out to the electrode assembly 31. The surface 67A on the cathode assembly 68 side is substantially parallel to one surface 65 of the side plate portion 63. That is, the anode assembly 9 can be rotated approximately 90 in plan view. (Refer to Figure 12). The cathode assembly 68 includes a shower plate 75 (= cathode), a cathode intermediate member 76, an exhaust conduit 79, and a stray capacitance body 82. -22- 1564I2. Doc 8 201207983 A nozzle plate having a plurality of small holes (not shown) formed on the surface of the cathode assembly 68 opposite to the anode assembly 9Q (anode 67) is capable of being sprayed toward the substrate w. gas. Further, the shower plates 75 and 75 are cathodes (high-frequency electrodes) connected to the matching box 72. A cathode intermediate member % connected to the matching box 72 is provided between the 2 (four) shower plates 75, 75. The P shower plate 75 is disposed on both sides of the cathode intermediate member 76 in a state of being electrically connected to the cathode intermediate member 76. The cathode intermediate member % and the shower plate (cathode) 75 are formed of a conductor, and a high frequency is applied to the shower plate (cathode) 75 via the cathode interposing member 76. Therefore, the voltages of the same potential and the same phase for generating plasma are applied to the two spray panels 75 and 75. The cathode intermediate member 76 is connected to the matching box (10) by wiring (not shown). A space portion is formed between the cathode intermediate member 76 and the shower plate 75. The film forming gas is supplied to the space portion 77 from a gas supply device (not shown). The space portion 77 is configured to be separated by the cathode intermediate member 76, and is formed corresponding to each of the sprays 275 and 75, and independently controls the gas discharged from each of the shower plates 175. That is, the space portion 77 has a function of a gas supply passage. In this embodiment, the space portion 77 is formed corresponding to each of the shower plates 75 and 75, so that the cathode assembly 68 has two system gas supply passages. Further, a hollow exhaust duct 79 is provided over the entire circumference of the peripheral portion of the cathode assembly 68. An exhaust port 8 有用 is formed on the exhaust duct 79 to discharge a film forming gas or a by-product (fine particles) of the film 81. Specifically, the film forming space formed between the substrate W and the shower plate 75 during film formation is formed in the surface to form the exhaust port 80. The exhaust port 80 is formed along the peripheral portion of the cathode assembly 68. And it is configured to be exhausted substantially equally throughout the entire week. 156412. Doc -23·201207983 Further, an opening (not shown) is formed in the surface 83 of the exhaust duct 79 below the cathode assembly 68 facing the inside of the film forming chamber U, and the discharged film forming gas can be formed into the same The inside of the membrane chamber 11 is discharged. Thinking about glare. The gas discharged from the attack film 11 to the inside of the film forming chamber 11 is exhausted from the outside of the film forming chamber 11 through the exhaust pipe 29 formed in the through hole 28 formed in the lower portion of the side surface of the film forming chamber 11. Further, a stray capacitance body 82 having a dielectric material and/or a buildup space is provided between the exhaust duct 79 and the cathode intermediate member 76. The exhaust duct 79 is connected to the ground potential. The exhaust duct 79 also functions as a shield frame for preventing abnormal discharge from the shower plate (= cathode) 75 and the cathode intermediate member 76. Further, a mask 78 is provided on the peripheral portion of the cathode assembly 68 so as to cover a portion from the outer peripheral portion of the exhaust duct 79 to the peripheral portion of the shower plate (= cathode) 75. The mask 78 covers the holding piece 59A (see FIG. 23) provided in the following clamping portion 59 of the carrier 21, and is formed integrally with the holding piece 59A when the film formation is performed. The gas flow path of the film forming gas or the fine particles introduced into the exhaust duct 79 in the membrane space is formed between the carrier 2 (the holding piece 59A) and the shower plate 75, and between the exhaust duct 79. Gas flow path r. By providing such an electrode assembly 31, a gap between the anode assembly 90 and the cathode assembly 68 of the substrate W is formed in one electrode assembly 3! Therefore, it is possible to simultaneously form two substrates W by one electrode assembly 31. Further, the substrate W is disposed between the anode assembly 90 and the cathode assembly 68, and the anode assembly 90 (anode 67) abuts against the substrate w and is movable to adjust the distance between the substrate w and the cathode assembly 68. When the film S i layer is formed on the substrate W by the plasma cvr) method, the gap between the substrate W and the cathode assembly 68 must be set to about 5 to 15 mm, and by the movable anode 67, it can be formed into 156412. . Doc •24- 201207983 The distance between the anode 67 and the cathode assembly 68 is adjusted before and after the membrane. Therefore, the take-out of the substrate W can be easily performed. Further, it is possible to prevent the substrate W from coming into contact with the anode 67 or the cathode assembly 68 and being damaged when the substrate w is placed. Further, since the anode 67 can be brought into contact with the substrate W, the heat of the heater can be efficiently transmitted to the substrate W by heating the substrate W-plane to form a film using a heater. Therefore, high quality film formation can be performed. Further, since the electrode assembly 31 can be attached and detached from the film forming chamber u, the cathode assembly 68 and the anode unit 9 of the electrode unit 31 need to be regularly maintained to remove accumulated by-products, etc., but can be easily performed. maintenance. Further, when the spare electrode assembly 31 is prepared, even if the electrode assembly is removed from the film forming chamber u by maintenance, the spare electrode assembly 31 can be replaced by mounting, and the maintenance can be performed without stopping the production line. Therefore, the production efficiency can be improved. As a result, even when a semiconductor layer having a low rate is formed on the substrate W, high yield can be achieved. Fig. 16 and Fig. 17 are schematic views showing the configuration of the feeding/retracting chamber 13, and Fig. 16 is a perspective view showing another perspective view of Fig. 16 (10) and Fig. 16. As shown in Fig. 16 and Fig. 馈, the feed/extraction chamber 13 is formed in a box shape. The side surface 〜 is formed with an opening σ32 which is openable and closable with respect to the outside, and a gate valve (not shown) is formed in the opening π32. On the side surface of the feeding/unloading chamber 13 that is connected to the transfer chamber 18, three carrier carry-in/out ports w into which three carriers 21 can be inserted are formed. A baffle (second opening/closing portion) 36 constituting an (opening and closing mechanism) 19 is provided in the carrier loading/unloading port 35. The airtight door valve and the side lower portion 41 of the feeding/extracting chamber 13 are connected to an exhaust gas f42 for vacuum evacuating the feeding/extracting chamber 13, and the exhaust pipe is provided with 156412. Doc -25- 201207983 There is a vacuum pump 43. Further, a first ozone-containing gas supply mechanism 190 that injects a gas containing ozone into the feeding/extracting chamber 13 may be provided in the feeding/withdrawal chamber 13. The second ozone-containing gas supply mechanism 190 includes an ozone-free gas supply source 198 that is not external, and an ozone-containing gas introduction pipe 199 that is disposed between the ozone-containing gas supply source 198 and the feed-in/exit chamber 13. . When the substrate W of the feeding/extracting chamber 13 is fed/removed, the substrate w, particularly the by-product deposited on the substrate W2 after the film formation process, is sprinkled and deposited in the feeding/extracting chamber 13. Therefore, according to the present embodiment, there is no case where the by-products are sprinkled and brought into the transport to 18. Thereby, an extremely clean vacuum space is maintained in the transfer chamber 18. Therefore, the carrier 21 is exchanged between the transfer chamber 18 and the film forming chamber, so that the film forming chamber 11 also maintains an extremely clean vacuum space, and film formation can be performed under stable process conditions, and the film forming conditions are improved. , and the manufacture of solar cells with excellent characteristics can be performed. In the same manner as in the case of the film forming chamber 11, the ozone-containing gas is supplied to the feeding/extracting chamber 13 by the second ozone-containing gas supply means 190 during the maintenance, and the ozone-containing gas can be used for feeding/ The by-product (polydecane) present in the take-out chamber 13 is oxidized. The cerium oxide-based white powder which is an oxide of polydecane can be easily removed by using, for example, a vacuum cleaner. Since it is not as good as the use of water first, the start of the feed/extraction chamber can be accelerated after the maintenance is completed. Figure 18 is a perspective view of the carrier. As shown in Fig. 18, the carrier 21 is formed with a frame 51 having a frame shape of two women's substrates w. That is, one carrier 21 is 156412. Doc 8 • 26· 201207983 For example, two substrates Wc2 frames 5l and 5i can be attached to the upper portion thereof and integrated by the connecting member 52. Further, a wheel 53 placed on the moving rail 37 is provided above the connecting member 52, and the wheel 53 is rolled on the moving rail 37, whereby the carrier 21 can be moved. Further, in the lower portion of the frame 51, in order to suppress the shaking of the substrate when the carrier 21 is moved, the frame holder 54 is further provided, and the front end of the frame holder 54 is fitted to the bottom surface of each chamber to have a concave cross section. Guide member 55. Further, the rail member 55 is disposed in the direction of the movement guide 37 in plan view. If the frame base μ is composed of a plurality of rollers, it can be conveyed more stably. Each of the frames 51 has a peripheral portion 57 and a nip portion. The film formation surface of the substrate w is exposed at the opening portion 56 formed in the frame 51, and the nip portion 59 can be sandwiched from both sides at the periphery σρ 57 of the opening material. The holding portion 59 of the holding substrate W is operated by a pressing force of a spring or the like. Further, the holding portion 59 is configured to include a surface that is abutted against the surface of the substrate W. The surface of the back surface wu (back surface) holding pieces 59A, 59B (see FIG. 23), the distance between the holding pieces 59A, 59B can be varied by a spring or the like, that is, corresponding to the anode assembly 90 (anode 67) With the movement, the holding piece 59A can be moved in the direction of approaching/offward with respect to the holding piece 59B (details will be described later, the carrier 21 is mounted on one moving rail 37 (can be kept 1) For one (two) substrate carrier, that is, three carriers (holding three pairs of six substrates) are mounted in one set of thin film solar cell manufacturing apparatuses 10. Further, in the film forming chamber In the state where there is no carrier (substrate) in 11 , it is preferable to feed the film forming chamber by the nitrogen gas supply mechanism 150. Nitrogen is sprayed into the crucible to remove by-products 156412. Doc •27· 201207983 (and/or oxides of this by-product). Specifically, the shutter 25 is temporarily closed in the state where the carrier (substrate) is not present in the film forming chamber 11, and thereafter, nitrogen gas is supplied from the nitrogen supply source 158 to the nitrogen gas introduction tube 159. Nitrogen gas is supplied to the nitrogen gas supply pipe 1 51 through the nitrogen gas introduction pipe 159. Then, the by-product (and/or the oxide of the by-product) attached to the inner wall of the electrode assembly 31 or the film forming chamber 11 is blown by injecting nitrogen gas from the ejection port 175 of the nitrogen gas ejector mechanism 170. Stayed in the lower part of the film forming chamber. At substantially the same time, the vacuum pump 30 is driven to perform the exhaust in the film forming chamber 11, and the by-product (and/or the oxide of the by-product) is removed. In addition, it is configured to remove the nitrogen gas in the film forming chamber 1 by, for example, raising the pressure in the film forming chamber 11 from about 1 〇Pa to about atmospheric pressure or near atmospheric pressure (atmospheric pressure or lower). The product can be. Further, the exhaust of the vacuum pump 30 can be started substantially simultaneously with the start of the injection of nitrogen gas, or can be started after a certain period of time from the start of the injection of the nitrogen gas, and the pressure in the film forming chamber 11 can reach a specific pressure (for example, 1〇〇pa) The above stage is started, and it can also be started after the pressure in the film forming chamber reaches the final pressure. Further, the injection of nitrogen gas and the evacuation by the vacuum pump 3 may be repeated. At this time, the surface of the first pipe 171 can be repeatedly circulated by the vacuum of the vacuum (four), and the surface is intermittently repeatedly sprayed with nitrogen. Since the rotary-face nozzle emits nitrogen gas, the nitrogen gas can be sprayed over a wide range, that is, the by-product (and/or the oxide of the by-product) attached to each portion can be effectively blown and treated. 156412. Doc 8 -28- 201207983 This nitrogen injection can be carried out in batches or periodically over several batches. Fig. 24 is a schematic block diagram showing another embodiment of the thin film solar cell manufacturing apparatus (film forming apparatus) of the present invention. The thin film solar cell manufacturing apparatus (film forming apparatus) 9 of the embodiment includes a film forming chamber 91A' which forms a p layer (102p) and an η layer (102η) of the top unit 1〇2 composed of a"Si. a film forming chamber 91B which forms an i layer (l〇2i) of the top unit 1〇2 composed of a-Si; a film forming chamber 91C' which forms a bottom unit 104 composed of pc-Si (semiconductor layer) a p-layer (ι〇4ρ); and a film forming chamber 91D, which is formed by a layer (1〇4i) and an 11 layer (104η) of a bottom unit ι〇4 (semiconductor layer) composed of pc-Si. Further, the thin film solar cell manufacturing apparatus (film forming apparatus) 9A of the embodiment includes the feeding/unloading chamber 93 and the transfer chamber 98. A plurality of traverse devices (first moving mechanisms) 97, 97 that are movable along the guide rail 16 are formed (built in) in the transfer chamber 98. The plurality of traversing devices 97 can be independently self-propelled independently of each other and controlled to be non-contacting and non-contacting when moving. By the plurality of traverse devices 97, the carrier 21 is transported between the film forming chambers 91A, 91Β, 91C, and 91D and the feeding/extracting chamber 93, and in the film forming chambers 91Α, 91Β, 91C. A gate valve (opening and closing mechanism) 99 and % are formed between the 91D and the feeding/extracting chamber % and the transfer chamber 98, respectively, and the feeding/extracting chamber 93, the plurality of film forming chambers 91, and the conveying chamber 98 are formed. Inside, respective vacuum pumps (exhaust mechanisms) 95a, 95b, and 95c are attached. In the thin film solar cell manufacturing apparatus (film forming apparatus) 9 of the embodiment, the thickness of the film forming film must be thicker to form the bottom unit 1〇4 (semiconductor layer) i 156412. Doc •29·201207983 The layer (1〇4i) and the η layer (HMn) (4) chamber 9 have been replaced with other film forming chambers 91A, 91B, and 91C, thereby improving the film forming ability of the entire device and efficiently manufacturing A thin film solar cell 100 constructed by the event. Further, by forming a plurality of traverse devices (first moving mechanisms) 97, the movement of the plurality of carriers 21 between the feeding/unloading chamber 93 and the film forming chamber 91 and the carrier 21 can be simultaneously and quickly performed. The movement of the plurality of film forming chambers 91 with each other can improve the film forming ability of the entire thin film solar cell manufacturing apparatus (film forming apparatus). [Industrial Applicability] The present invention is widely applicable to a film forming apparatus which forms a film on a substrate by a CVD method. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing an example of a thin film solar cell; FIG. 2 is a schematic configuration view of a thin film solar cell manufacturing apparatus (film forming apparatus) according to an embodiment of the present invention; Fig. 4 is a perspective view of the film forming chamber of the embodiment of the present invention viewed from another angle; Fig. 5 is a side view of the film forming chamber of the embodiment of the present invention; Fig. 7 is a perspective view (side view) of a film forming chamber according to an embodiment of the present invention; Fig. 8 is a perspective view of a film forming chamber according to an embodiment of the present invention; (Front view from the side of the feed-in/out chamber); Fig. 9 is a perspective view of a nitrogen sparging mechanism according to an embodiment of the present invention; 156412. Figure 10 is a cross-sectional view taken along line AA of Figure 9; Figure 11 is a front view of a nitrogen sparging mechanism according to an embodiment of the present invention; and Figure 12 is a perspective view of an electrode assembly according to an embodiment of the present invention; Fig. 14 is a partially exploded perspective view of an electrode assembly according to an embodiment of the present invention, and Fig. 15 is a cathode assembly of an electrode assembly according to an embodiment of the present invention; FIG. 1 is a perspective view of a feed/removal chamber according to an embodiment of the present invention; FIG. 1 is a perspective view of the feed/extract chamber of the embodiment of the present invention viewed from another angle; Fig. 18 is a perspective view of a carrier according to an embodiment of the present invention; Fig. 9A is an explanatory view showing a movement state of a carrier according to an embodiment of the present invention; and Fig. 19B is a view showing a movement state of the carrier according to the embodiment of the present invention; Fig. 19C is an explanatory view showing a movement state of a carrier according to an embodiment of the present invention; Fig. 20 is a view showing a thin film solar battery according to an embodiment of the present invention; Illustrating a process of manufacturing method, and a schematic cross-sectional view of the system when the substrate is inserted into an electrode assembly; FIG. 21 are diagrams illustrating a process of manufacturing a form of embodiment of the present invention is a method of thin film solar cell; 156,412. Illustrated in the process of the method for producing a thin film solar cell according to the embodiment of the present invention, and Fig. 23 is an explanatory view showing the process of the method for producing a thin film solar cell according to the embodiment of the present invention. A partial cross-sectional view of the substrate in the case of the electrode assembly; and FIG. 24 is a schematic configuration view showing another aspect of the thin film solar cell manufacturing device according to the embodiment of the present invention. [Description of main component symbols] 10 Thin film solar cell manufacturing apparatus (into the armor 11 film forming chamber 13 feeding/extracting chamber 17 traverse device (first moving mechanism) 18 transfer chamber 19 gate valve (opening and closing mechanism) 21 carrier 30, 43 , 50 vacuum pump (exhaust mechanism) 156412. Doc '32.

Claims (1)

201207983 七、申請專利範圍： ^ 一種成膜裝置，其特徵在於具備： 搬送室，其内置有載置保持有基板之搬運器且可自走 之第一移動機構； 饋入/取出室及複數個成膜室’其以與上述搬送室連通 之方式經由個別之開閉機構而配設；及 排氣機構，其個別地附設於上述搬送室、上述铲入/ 出室及上述成膜室；且 於上述複數個成膜室内分別具備於上述基板 膜之成膜裝置》 皮 2. 如請求項！之成膜裝置，其中上述第一移動機構進而包括 使上述搬運器於上述搬送室與上述成膜室之間移動 二移動機構。 3. 如請求項2之成膜裝置，其中上述搬運器具備複數個； 上述第二移動機構使複數個上述搬運器同時移動。 4. 如請求項1至3中任_适 項之成膜裝置，其中上述成膜室且 備上述基板之加熱機構。 5. 如請求項1之成膜裝置，其中上述搬運器係以上述基板之 面沿重力方向之方4 # 彳式保持上述基板，且上述第—移動機 構可載置複數個上述搬運器。 6. 如明求項1之成膜裝置，其中上述搬運器可保持複 述基板。 7. 如4求項1之成膜褒置，其中於上述搬送室内内置複數個 上述第一移動機構。 156412.doc 201207983 8.如凊求項1之成膜裝置，其中於上述搬送室之兩側設有複 數個上述成膜室，且上述第一移動機構可自彼此不同之2 個方向進行上述搬運器之取出放入。 9 士 求項1之成膜裝置，其中上述成膜機構可對複數個基 板同時成膜。 1 〇.如凊求項9之成膜裝置，其中上述成膜機構係包括複數個 陰極電極、及設於上述各陰極電極之兩側之陽極電極的 電漿CVD機構。 11. 如請求項10之成獏裝置，其中上述基板係於以其面沿重 力方向之方式被上述搬運器保持之狀態下，於上述陰極 電極與上述陽極電極之間搬入/搬出。 12. 如s青求項1〇之成膜裝置，其中上述被膜係使用於太陽電 池之微晶矽膜。 13. 如请求項1之成膜裝置，其中包括將與上述成膜室不同種 類之被膜成膜之其他成膜室。 14. 如請求項1之成膜裝置，其中包括將與上述成膜室相同種 類之被膜成膜之其他成膜室。 156412.doc ^ • L · ⑧201207983 VII. Patent application scope: ^ A film forming apparatus, comprising: a transfer chamber having a first moving mechanism on which a carrier holding a substrate is placed and capable of self-propelled; a feeding/extracting chamber and a plurality of a film forming chamber that is disposed in communication with the transfer chamber via an individual opening and closing mechanism; and an exhaust mechanism that is individually attached to the transfer chamber, the scooping/exiting chamber, and the film forming chamber; Each of the plurality of film forming chambers is provided in the film forming apparatus of the substrate film. 2. The request item! In the film forming apparatus, the first moving mechanism further includes a moving mechanism that moves the carrier between the transfer chamber and the film forming chamber. 3. The film forming apparatus of claim 2, wherein the carrier has a plurality of carriers; and the second moving mechanism simultaneously moves the plurality of carriers. 4. The film forming apparatus according to any one of claims 1 to 3, wherein the film forming chamber is provided with a heating mechanism of the substrate. 5. The film forming apparatus of claim 1, wherein the carrier holds the substrate in a direction of gravity in a direction of the substrate, and the first moving mechanism can mount a plurality of the carriers. 6. The film forming apparatus of claim 1, wherein the carrier is capable of holding a plurality of substrates. 7. The film forming apparatus of claim 1, wherein a plurality of the first moving mechanisms are built in the transfer chamber. The film forming apparatus of claim 1, wherein a plurality of the film forming chambers are provided on both sides of the transfer chamber, and the first moving mechanism can perform the transport in two directions different from each other. Take out the device. 9. The film forming apparatus of claim 1, wherein the film forming mechanism can form a film simultaneously on a plurality of substrates. The film forming apparatus of claim 9, wherein the film forming mechanism comprises a plurality of cathode electrodes and a plasma CVD mechanism provided on the anode electrodes on both sides of the cathode electrodes. 11. The apparatus according to claim 10, wherein the substrate is carried in and out between the cathode electrode and the anode electrode in a state where the substrate is held by the carrier in a direction along the gravity direction. 12. A film forming apparatus according to the invention, wherein the film is used in a microcrystalline germanium film of a solar cell. 13. The film forming apparatus of claim 1, which comprises a film forming chamber which forms a film of a different kind from the film forming chamber. 14. The film forming apparatus of claim 1, which comprises a film forming chamber which forms a film of the same kind as the film forming chamber described above. 156412.doc ^ • L · 8
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