201205653 J»332pif 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種自半導體鑄錠（ing〇t)進行切片 (slice)加工而切出的太陽電池基板用半導體晶圓的洗淨 方法。 【先前技術】 太陽電池用半導體晶圓的製造步驟是藉由對半導體鑄 錠進行切片加工而切出成晶圓（wafer)狀之後，在該晶圓 上形成用於光侷限（optical confinement)的棱錐（pyramid) 狀的表面紋理（texture)構造而進行。紋理構造是在對自 半導體鑄錠切出的晶圓進行洗淨之後，將該晶圓浸潰於氫 氧化鉀（KOH)等的驗性水溶液或者於氫氧化斜（K〇H) 等的驗性水溶液中添加有異丙醇（is〇pr〇pyl alc〇h〇b jpA ) 等的溶液中進行鹼蝕刻（非等向性蝕刻（etching))而形成。 進而，為了提高所製造的太陽電池的品質，對於自半 導體鑄錠的切片至紋理構造的形成，提出有各種製造製程 (praCess)。例如，於專利文獻i中揭示有一種方法：對 自半導體鑄錠進行切片而切出的半導體晶圓進行蝕刻以去 除的圓表面的損壞（damage)層，再浸潰於氧化性水溶液 與鹼性水溶液的混合液中以於晶圓表面形成化學氧化膜之 後，進行非等向性蝕刻。而且，於專利文獻2中記載有： 對表面具有損壞層的半導體晶圓依序進行酸溶液中的浸潰 處理、水處理、鹼溶液中的浸潰處理以及水洗處理，以於 晶圓表面形成紋理構造。 201205653^ 另一方面’作為自半導體鑄錠切出晶圓的切割方法， 使用有利用油性（礦物油系）漿料（slurry)的切割與利用 水溶性（乙二醇（glycol)系）漿料的切割這兩種方法。 在這兩種方法之間，由於所使用的漿料的種類以及切片後 的洗淨條件的不同（有無油分洗淨），於太陽電池基板用半 導體晶圓的表面殘存的有機物的附著量產生差異。 然而’若於太陽電池基板用半導體晶圓的表面附著有 機物’則會成為對隨後進行的太陽電池製造製程的鹼蝕刻 處理造成阻礙的主要原因，從而在與未附著（或少附著） 有機物的太陽電池用半導體晶圓之間，蝕刻量產生差異。 其結果，亦會對紋理構造形成等的製程品質造成影響，最 終導致由該太陽電池基板用半導體晶圓製造的太陽電池的 轉換效率降低。 因此’必須對應於上述使用油性及水溶性漿料的切割 =法來調整上述紋理構造形成（鹼蝕刻）以後的太陽電池 單疋（cell)製造製程，從而成為導致製造線（Une)管理 的繁瑣性並且阻礙所製造的太陽電池單元的品質的穩定性 ，主要原因。進而’參照上述專利文獻丨以及專利文獻2 或其他公知文獻，皆未揭示將因如上所述的自鑄錠切出半 導體晶BJ的切出方法的差異所造成的影料以去除的方 法。 先前技術文獻 專利文獻 專利文獻1 ·日本專利特開2006-344675號公報 4 201205653. jojjzpif 專利文獻2 :日本專利特開2〇〇5_34〇643號公報 【發明内容】 (發明所欲解決之問題） 因此’著眼於該些方面而完成的本發明的目的在於提 供一種太陽電池基板用半導體晶圓的洗淨方法，無論對半 導體鑄錠進行切片時所用的加工用漿料是油性漿料還是水 溶性衆料，在隨後進行的太陽電池製造製程的鹼蝕刻處理 中，均可適用大致相同的鹼蝕刻條件。 (解決問題之技術手段） 達成上述目的之太陽電池基板用半導體晶圓的洗淨方 法的發明的特徵在於包括：切片步驟，使用加工用聚料來 對半導體鑄錠進行切片加工而切出半導體晶圓；第丄洗淨 步驟，將附著於切出的半導體㈣表面的加工用漿料予以 ^除；以及第2洗淨步驟，使用僅具有氧化作用的氧化性 ϋΐϊ附著於第1洗淨步射獲得的半導體晶圓表面的 有機雜質進行分解去除。 太陽St”㈣液來對加m料已被洗淨去除的 池基板用半導體晶圓的表面進行洗淨，可對附著於 Ϊ電池基板用半導體晶圓表面的有機物進行分解去除。 在隨後的太陽電池單元製造製用 所得的域電池餘料導體= 料進仃切片加獨得的太陽電^水 下’亦稱作水溶性切f 的製造^ =3 201205653 在洗淨階段伴隨银刻而有利於在隨後的鹼银刻處理中形 良好的紋理構造。 / 進而，較佳為，加工用漿料為油性漿料或水溶性漿料， 無論對切片加工使用油性漿料以及水溶性漿料令的任一 種，使用氧化性藥液的洗淨是均根據規定的洗淨條件而 行。 由於無論是使用油性漿料還是使用水溶性漿料，均根 據規定的洗淨條件來進行利用氧化性藥液的洗淨，因此無 須根據每片太陽電池基板用半導體晶圓的切片加工的方 來改變洗淨方法，因而容易進行製造步驟的管理。 “而且’較佳為’上述規定的洗淨條件包括上述氧化性 樂液的濃度以及溫度與洗淨時間的條件。 雜二較佳為’氣化性藥液為臭氧水、過氧化氫水或 曰为门夂^谷液。該些藥液具有優異的氧化性，有助於半導體 B曰圓表面附著的有機物的分解去除。 二而’較為理想的是’加工用漿料的洗 加工而切出的半導趙晶圓進 (發明的效果） 附著僅具有氧化作用的氧化性藥液來對 進仃分解去除，因此無論對料 + ^ 加工用将Μ S、、i 、s千導體鸩叙進行切片時所用的 陽電池製造二驗姓刻在隨後進行的太 埋中，均可適用大致相同的鹼 6 201205653 钱刻條件。 【實施方式】 以下’參照圖式來說明本發明的實施例。 圖1是表示本發明的實施例的太陽電池基板用半導體 B曰圓的洗淨方法的測試流程的圖。首先，分別使用油性漿 料與水溶性漿料，對半導體鑄錠進行切片而分別切出必要 片數的半導體晶圓（尺寸：156mmxl56mm)(步驟S1)。 繼而’對於切出的晶m，進行崎的加工賴料的洗淨去 除驟S2)。圖2⑷是對油性漿料進行洗淨去除的流 ί用H恃導體晶圓進行煤油洗淨（步驟S21);然後， 使用50⑽界岭關（_ 劑_液)進行洗淨3。分鐘(步驟 = 粗洗淨與精洗淨這兩階段來進行。進而， 〇.5%_ 2%)進行洗淨15 界面： 圖2⑷的情況相比，|彡的流程。此時，與 步驟，僅實施界面活性劑洗淨(丁=^，^ 驟S23)。 少驟S22)與鹼洗淨（步 繼而’將藉由步驟S1、 池基板用半導體晶圓分為進$而準備的多個太陽電 溶液（hn〇3)或過氧化氫曰由臭乳水（03)、硝酸水 淨（步驟S3)的晶圓 2〇2)的氧化性藥液的洗 -)的，對設為氧W二：== 201205653 處理（步驟Μ ) si以及步驗^ 處，步驟S3以及步驟s3’無須與步驟 S2而預头八，連續地進行，只要藉由步驟S1以及步驟 切片晶圆準備必要片數的油性切片晶圓以及水溶性 理的詳細。j。此處，圖3表示藉由氧化性藥液的洗淨處 用純水進^ ’對於太陽電池基板料導體晶圓，首先利 ===':)洗淨5分鐘(步_);繼而， 用純水進行里1〇分鐘（步驟S32);進而，利 、、也美拓^洗洗分鐘（步驟S33);隨後，使太陽電 池基板用+導體晶圓乾燥（步驟s34)。 PPm^7^ ： 10 K為(U wt%(重量百分比），過氧化氫水為3〇/〇。 ，作為藉由氧化性藥液的處理條件，當使用臭氧 理時問，較佳為常溫且濃度為。.lppm至2Gppm，處 、s ·、、分鐘至20分鐘的範圍；更佳為濃度為1〇 ppm PPm ’處理時間為1〇分鐘。而且，當使用過氧化氮 2〇2)時，較佳為常溫且濃度為0.1 wt°/〇至10 wt%， 處理時間為1分鐘至20分鐘的範圍；更佳為.濃度為4 wt% ，6 wt/。，處理時間為1()分鐘。進而，當使用硝酸水溶液 (HN〇3)時’較佳為常溫且濃度為0.01 wt%至10 wt%， 處理時間1分鐘至2G分鐘的_ ;更佳紐度為〇] wt% 至Iwt%，處理時間$ 1〇分鐘。該些較佳的濃度以及處理 時間的範_下限值是若低於此侧無法賴藉由洗淨來 增加鹼餘刻處理時的敍刻量的效果的值，上限值是若超過 此值則上述效果將飽和的值。 8 201205653 藉由氧化性藥液的洗淨 基板用半導體晶圓於S3)之後，將太陽電池 量行_刻處理⑽一， 步驟^:以:’:广對應於切片步驟’ ^ 1 . _ 驟步驟3對應於第2洗淨步驟。 用本錢目1❺職流麵败社陽電池基板 用^體日日圓，刻量的測定結果。該測試中，針對油性 二曰日圓與水/合性切片晶圓這兩者，進行無處理、藉由臭 ^的洗淨、藉由硝酸水溶㈣洗淨以及藉由過氧化氣水 、、，；爭作為步驟S3或S3,，並測定出餘刻量。針對各 況使用3片明圓來進行測定，並求出平均值。201205653 J»332pif VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor wafer for solar cell substrate cut by slice processing from a semiconductor ingot (ingt) Net method. [Prior Art] The manufacturing process of a semiconductor wafer for a solar cell is performed by slicing a semiconductor ingot to form a wafer shape, and then forming an optical confinement on the wafer. It is carried out by a pyramid-like surface texture. The texture structure is obtained after the wafer cut out from the semiconductor ingot is washed, and the wafer is immersed in an aqueous test solution such as potassium hydroxide (KOH) or the like (K〇H). The aqueous solution is formed by adding an isopropanol (is〇pr〇pyl alc〇h〇b jpA ) or the like to an alkali etching (non-isotropic etching). Further, in order to improve the quality of the manufactured solar cell, various manufacturing processes (praCess) have been proposed for the formation of a semiconductor ingot from a slice to a texture structure. For example, Patent Document i discloses a method of etching a semiconductor wafer sliced from a semiconductor ingot to remove a damaged layer of a circular surface, and then immersing in an oxidizing aqueous solution and an alkaline layer. In the mixed solution of the aqueous solution, an anisotropic etching is performed after forming a chemical oxide film on the surface of the wafer. Further, Patent Document 2 discloses that a semiconductor wafer having a damaged layer on its surface is sequentially subjected to an impregnation treatment in an acid solution, a water treatment, an impregnation treatment in an alkali solution, and a water washing treatment to form a wafer surface. Texture construction. 201205653^ On the other hand, 'cutting method for cutting wafers from semiconductor ingots, using oily (mineral oil) slurries and using water-soluble (glycol) pastes The two methods of cutting. Between the two methods, depending on the type of the slurry to be used and the washing conditions after the slicing (with or without oil washing), the amount of organic substances remaining on the surface of the semiconductor wafer for solar cell substrate is different. . However, 'If the organic substance adheres to the surface of the semiconductor wafer for a solar cell substrate', it is a major cause of hindrance to the alkali etching process of the subsequent solar cell manufacturing process, and thus the sun is attached to (or less attached to) the organic substance. There is a difference in the amount of etching between semiconductor wafers for batteries. As a result, the process quality such as the texture structure formation is also affected, and the conversion efficiency of the solar cell manufactured from the semiconductor wafer for solar cell substrate is eventually lowered. Therefore, it is necessary to adjust the cell manufacturing process of the solar cell after the above-described texture structure formation (alkali etching) in accordance with the above-described cutting method using the oily and water-soluble slurry, thereby causing cumbersome manufacturing line (Une) management. The main reason is the stability of the quality of the manufactured solar cell unit. Further, the above-mentioned Patent Document 丨 and Patent Document 2 or other known documents do not disclose a method of removing the shadow material caused by the difference in the cutting method of cutting out the semiconductor crystal BJ from the ingot as described above. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2006-344675 No. 201205653. Therefore, an object of the present invention which has been made in view of the above aspects is to provide a method for cleaning a semiconductor wafer for a solar cell substrate, which is an oily slurry or a water-soluble slurry for slicing a semiconductor ingot. It is expected that substantially the same alkali etching conditions can be applied to the alkali etching treatment of the subsequent solar cell manufacturing process. (Technical means for solving the problem) The invention of the method for cleaning a semiconductor wafer for a solar cell substrate which achieves the above object includes a slicing step of slicing a semiconductor ingot using a processing aggregate to cut out a semiconductor crystal a second cleaning step of removing the processing slurry attached to the surface of the cut semiconductor (four); and a second cleaning step of attaching to the first cleaning step using an oxidizing cerium having only oxidation The organic impurities on the surface of the obtained semiconductor wafer are decomposed and removed. The sun St" (four) liquid is used to clean the surface of the semiconductor wafer for the cell substrate from which the m material has been washed and removed, and the organic matter adhering to the surface of the semiconductor wafer for the silicon battery substrate can be decomposed and removed. The battery cell residual conductor obtained from the manufacture of the battery unit = the material into the 仃 slice and the unique solar power ^ underwater 'also known as the water-soluble cut f manufacturing ^ = 3 201205653 in the washing stage with silver engraving A good texture structure is formed in the subsequent alkali silver etching process. Further, it is preferable that the processing slurry is an oily slurry or a water-soluble slurry, regardless of the use of the oily slurry and the water-soluble slurry for the slicing process. In any case, the cleaning using the oxidizing chemical solution is performed according to the predetermined washing conditions. The oxidizing liquid is used according to the predetermined washing conditions, whether the oily slurry or the water-soluble slurry is used. Since the cleaning method is not required, the cleaning method is not changed according to the slicing of the semiconductor wafer for each solar cell substrate, so that the manufacturing step can be easily managed. "And 'better' Wash conditions including the concentration of the predetermined conditions of temperature and time and the washing liquid oxidation music. Preferably, the miscible chemical liquid is ozone water, hydrogen peroxide water or hydrazine is a threshold liquid. These chemical liquids have excellent oxidizing properties and contribute to the decomposition and removal of organic substances adhering to the surface of the semiconductor B. Secondly, it is preferable that the semiconductor wafer which is cut out by the processing slurry is processed (the effect of the invention), and the oxidizing chemical liquid having only the oxidation effect is attached to decompose and remove the enthalpy, so that no matter the material + ^ For the processing of the Μ S, i, s 千 鸩 进行 的 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳 阳[Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a view showing a test flow of a method for cleaning a semiconductor B-circle for a solar cell substrate according to an embodiment of the present invention. First, the semiconductor ingot was sliced using the oily slurry and the water-soluble slurry, respectively, and the necessary number of semiconductor wafers (size: 156 mm x 125 mm) were cut out (step S1). Then, for the cut crystal m, the cleaning of the processed material is carried out to remove the step S2). Fig. 2 (4) is a flow of washing and removing the oily slurry. The kerosene is washed with a H-conductor wafer (step S21); and then, washing is performed using 50 (10) boundary ridge (liquid). Minutes (step = rough wash and fine wash are carried out in two stages. Further, 〇.5%_ 2%) is washed 15 interface: Figure 2 (4) compared to the case of |彡. At this time, with the procedure, only the surfactant cleaning is performed (d = ^, step S23). a small number of steps S22) and alkali washing (step by step), a plurality of solar electric solutions (hn〇3) prepared by dividing the semiconductor wafer in the cell substrate by the step S1, or hydrogen peroxide by the stinky water (03), the nitric acid water (step S3) of the wafer 2〇2) of the oxidizing chemical liquid wash-), the pair is set to oxygen W 2:== 201205653 processing (step Μ) si and step test ^ Steps S3 and s3' need not be performed in advance with step S2, and are continuously performed, and the necessary number of oil-sliced wafers and water-soluble details are prepared by slicing the wafer by step S1 and step. j. Here, FIG. 3 shows that the cleaning of the oxidizing chemical liquid is carried out by using pure water for the solar cell substrate material wafer wafer, firstly, ===':) for 5 minutes (step _); The inside of the solar cell substrate is dried with a +conductor wafer (step S34). PPm^7^ : 10 K is (U wt% (% by weight), hydrogen peroxide water is 3 〇 / 〇. As a treatment condition by oxidizing chemical solution, when using ozone, preferably at room temperature And the concentration is from .lppm to 2Gppm, at the range of s ·, and minutes to 20 minutes; more preferably, the concentration is 1〇ppm PPm 'the treatment time is 1〇 minutes. Moreover, when using nitrogen peroxide 2〇2) Preferably, it is normal temperature and the concentration is from 0.1 wt/〇 to 10 wt%, and the treatment time is in the range of from 1 minute to 20 minutes; more preferably, the concentration is 4 wt%, 6 wt/. The processing time is 1 () minutes. Further, when an aqueous solution of nitric acid (HN〇3) is used, 'it is preferably normal temperature and the concentration is 0.01 wt% to 10 wt%, and the treatment time is 1 minute to 2 G minutes _; the better ratio is 〇] wt% to 1 wt% , processing time is $1〇. The preferred concentration and the lower limit value of the treatment time are values below the effect that the side cannot be reduced by the cleaning to increase the amount of the alkali residue treatment, and the upper limit value is exceeded. The value is the value that the above effect will saturate. 8 201205653 After cleaning the semiconductor wafer for the substrate by the oxidizing chemical solution, after S3), the solar cell is processed (10), and the step is: ': wide corresponds to the slicing step '^1. _ Step 3 corresponds to the second washing step. It is measured by the Japanese yen and the measurement of the amount of the Japanese yen. In this test, both the oily divalent yen and the water/composite sliced wafer were treated without treatment, washed with odor, washed with nitric acid (4), and treated with peroxygen gas, As a step S3 or S3, the amount of the remaining amount is determined. The measurement was performed using three bright circles for each case, and the average value was calculated.
201205653 JO J201205653 JO J
[表1] 油性切片 無處理 蝕刻量（g) 0.759 平均值（g) 0.814 0.904 〇 780 〇3處理 1.262 1.341 1.511 , 1.250 册〇3處理 1.151 1.128 1.197 1.037 H2〇2處理 1.090 1.095 1.071 1 125 水溶性切片 無處理 1*1. 1.294 1.280 1.276 1 271 〇3處理 1.265 1.243 1.235 1.229 ⑽〇3處理 1.332 *" 一 1.289 1.276 1 260 H2〇2處理 1.264 1.214 1.206 1 17? -----_ 、，圖4將表1的太陽電池基板用半導體晶圓的侧量的 平均值示於圖表。若觀察在加I用歸的洗淨•去除（步 驟幻）之後不進行藉由氧化性藥液的洗淨（步驟S3)，即 無處理（步，驟S3，）的半導體晶圓，則在油性切片晶圓盘水 ，性切JiM中，餘刻量出現大的差異。考慮其原因在於， 當使用油性漿料來進行切片加工時，鹼蝕刻因附著於太陽 電池基板用半導體晶圓的有機物而受到妨礙。 對於水;谷性切片晶圓，當進行藉由臭氧水（)、石肖 201205653 :上-==03)以及過氧化氫水(H2〇2)的洗淨處理 驟S3)時，與無處理的情況相比，蝕刻量幾乎看不到 另-方面’對於油性切片晶圓，進行藉由臭氧水 、、(，）、石肖酸水溶液（hno3)以及過氧化氫水（H2〇2)的 '先f處理（步驟S3)的情況時的磁彳量比無處理的情況時 由此可知’藉由進行利用氧化性藥液的洗淨處 八紐ί於太陽電池基板用半導體晶圓表面的有機物將被 i好地^除’太陽電池_用半導體晶圓表面的蝕刻得以 如以上職明的’根據本發明，使祕具有氧化作用 ':化性藥液即臭氧水（c>3)、㈤酸水（HNC^以及過氧 ^·Λ^Μϋ2ο2；)來對加m料已被洗淨去除的太陽電池 二板，半導體BBagJ的表面騎洗淨，目此無論料導麟 旋進行切片加工時使用油絲料以及水溶性㈣中的任-，’均可_大致相同雜勤!條件，以驗太陽電池的 =理構造形成。藉此，太陽電池單元製造線的管理變得簡 早，且可使所製造的太陽電池單元的品質穩定。 。再者，本發明並不僅限於上述實施形態，可進行若干 種變更或變形。例如，作為氧化性藥液，並不限於臭氧水、 肖酉文水、過氧化氫水，亦可使料氯酸或硫酸等。而且， 作為對加JL㈣料進行洗料除的方法，並*限於使用界 劑的方法’可採㈣向半導體晶圓噴射高壓的純水 的方法或施加超聲波的方法、或者這些方法與使用界面活 性劑的方法的組合等各種方法。 201205653 [產業上的可利用性] 工 f據f發明，無論對半導體鑄錠進行切片時所用的加 用水料疋油性漿料還是水溶性漿料，在隨後進行的太陽 電池製造製程的鹼_處理中’均可適用大 刻條件。 【圖式簡單說明】 曰二ϋΐΐ本發明的實施例的太陽電池基板用半導體 日日圓的洗孕方法的測試流程的圖。 去2(b)是表示圖1的加工用漿料的洗淨· 去除产程，^d*12(^喊料性漿_的洗淨· 流程: ()表示使用水溶性漿料時的洗淨•去除 圖。圖3是表示圖1的藉由氧化性藥液的洗淨的詳細流程 板用試流程而測定的太_基 【主要元件符號說明】 ° S1、S2、S3、S3，、S4、S21、S22 S33、S34 :步驟 S23、S31、S32、 12[Table 1] Oil-free section No treatment etching amount (g) 0.759 Average value (g) 0.814 0.904 〇780 〇3 treatment 1.262 1.341 1.511, 1.250 Book 〇3 treatment 1.151 1.128 1.197 1.037 H2〇2 treatment 1.090 1.095 1.071 1 125 Water-soluble Slice no treatment 1*1. 1.294 1.280 1.276 1 271 〇3 treatment 1.265 1.243 1.235 1.229 (10) 〇3 processing 1.332 *" A 1.289 1.276 1 260 H2〇2 processing 1.264 1.214 1.206 1 17? -----_ ,, 4 is a graph showing the average value of the side amount of the semiconductor wafer for a solar cell substrate of Table 1. If it is observed that after the cleaning/removal (step magic) of the addition of I, the semiconductor wafer is not washed by the oxidizing chemical solution (step S3), that is, without processing (step S3), then The oily sliced wafer water, the sex cut JiM, there is a big difference in the amount of the remaining amount. The reason for this is that the alkali etching is hindered by the organic matter adhering to the semiconductor wafer for a solar cell substrate when the oil slurry is used for slicing. For water; grain-cut wafer, when washing process S3) by ozone water (), Shi Xiao 201205653: upper -==03) and hydrogen peroxide water (H2〇2), and no treatment In the case of the etching, the amount of etching is hardly seen in another aspect. For the oil-sliced wafer, ozone water, (,), aqueous solution of tartaric acid (hno3), and hydrogen peroxide water (H2〇2) are used. In the case where the amount of magnetic enthalpy in the case of the first f treatment (step S3) is smaller than that in the case of no treatment, it is known that the surface of the semiconductor wafer for the solar cell substrate is removed by the cleaning of the oxidizing chemical liquid. The organic matter will be removed from the 'solar cell _ by the etching of the surface of the semiconductor wafer as described above. 'According to the present invention, the secret has an oxidation effect': the chemical liquid is ozone water (c > 3), (5) Acid water (HNC^ and peroxygen ^·Λ^Μϋ2ο2;) to clean the surface of the solar cell, which has been washed and removed, and the surface of the semiconductor BBagJ is washed, so that it can be sliced regardless of the material When using oil wire and water-soluble (four) in any -, 'can be _ roughly the same miscellaneous! Conditions to test solar power = The management structure is formed. Thereby, the management of the solar cell manufacturing line becomes simple, and the quality of the manufactured solar cell unit can be stabilized. . Further, the present invention is not limited to the above embodiments, and various modifications and changes can be made. For example, the oxidizing chemical liquid is not limited to ozone water, xiaoqiwen water, or hydrogen peroxide water, and may be made of chloric acid or sulfuric acid. Further, as a method of washing and adding a JL (four) material, and * limited to a method using an interface agent, a method of spraying high-pressure pure water onto a semiconductor wafer or a method of applying ultrasonic waves, or using the interface activity Various methods such as a combination of methods of the agent. 201205653 [Industrial Applicability] According to the invention of f, the water-in-oil slurry or the water-soluble slurry used for slicing the semiconductor ingot, the alkali treatment in the subsequent solar cell manufacturing process Medium 'can be used for large engraving conditions. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a view showing a test flow of a semiconductor wafer sealing method for a solar cell substrate according to an embodiment of the present invention. 2(b) is a washing and removing process of the processing slurry of Fig. 1, and ^d*12 (cleaning of the shouting slurry): () indicates washing when the water-soluble slurry is used • The figure is removed. Fig. 3 is a graph showing the flow chart of the detailed process plate for cleaning by the oxidizing chemical solution of Fig. 1 (the main component symbol description) ° S1, S2, S3, S3, and S4 , S21, S22 S33, S34: steps S23, S31, S32, 12