201205199 * 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種形成光阻之裝置、一種空白光罩、 及一種空白光罩之製造方法，更具體來說，其係關於一種 形成光阻之裝置，其係能夠將形成在基板邊緣及附著於該 基板之側邊的光阻殘餘層之珠狀殘餘物(edge bead)的寬度 及高度減至最小，並關於一種空白光罩、及一種空白光罩 之製造方法。 【先前技術】 用於製造半導體元件之光微影製程的光罩係藉由圖案 化空白光罩之金屬層或其類似物來製造。 王曰亢皁係由形成在矩形玻璃基板上之遮光層、半透 明層、及相轉移層或其類似物所構成，而光阻係^勻地塗 布於其上。空白光罩通常係以如下之方法製造，其中透明 ，板上形成有-層以上金屬層，而光阻劑係滴在該金屬居 士’接者使該基板旋轉以使該光阻劑向基 二 光阻劑均勾的塗布於該金屬層上。藉由;C 述方法來形成光阻之裝置，通常被稱為旋塗裝置 上 然該光阻層係以典型嶋置形;在該 上時，由於光㈣之表面張相及基板 金屬層 =:基板的邊緣部分會形成異常厚之球二燥 》年來於光罩内的主要圖親域變寬 上餘物。 轉點、及條碼或其類似物職於其 ’電框架、 伸至光罩邊緣’且實施圖案化至從自空白二^案，係延 、切00 _處。因此，難題 先罩邊緣起至多 狀殘餘物寬度大於約__時要^空白光阜之殊 要圖案無法圖案化。 3/19 201205199 • * 上述難題’典型使用重複曝光次要圖 法“，在增加曝光時間的同時也減 方 ==加產率依然降低，因為次要圖案 王L復因此，提高了空白光罩之製造成本。 π 圖1為顯示典型使用之光阻形成裝置 型光阻形成裝置10包括喷嘴〗丨、旋 之不思圖。典 15、排氣管路Μ、壓力計〗6、及排氣祕達 置10具有氣流透過排氣管路14自旋蛛 1裝 ::該气_繼10係設計成藉由=二 為了使用㈣㈣流動’㈣㈣乾燥光阻。 為了使用典型光阻形成裝置10來在空 具:光金屬層或其類似物之空白光罩5。係固 i二二=透過物11恤空白光罩5。 泛二去該光_藉離:力廣 = 推去之級嶋表祕力在空白 光罩50之邊緣聚集，並形成珠狀殘餘物。 中光部分的_意圖，其 喷灑在金屬層52中央之光阻 = 旋轉，自透明基板51之中央部八^f由透明基板51之 勻的塗布透明基板51。到達邊^、，散布出去，藉以均 並形成不需要的光阻殘餘層53士 ^劑將基板側邊包住 央部分之光阻劑還快開始^焊。1緣之光阻劑比中 光軍5〇之旋射心移動5t h 騎光阻劑自空白 中央部分再次散布出去以時旋轉速度變快之故。自 帝出去之先阻劑係聚集在已經乾燥的光阻 201205199 ' 劑上並再次乾燥，且重複上述製 处 狀殘餘物-，基板側 .的寬=====珠狀殘餘物- —效圖案區域。_，珠狀_= 光罩中的有 味了-㈣3-1及光阻殘餘層弘2產 放ΡΙΐΓ們以運^白光罩50 ’其在經由 放進相子或類似物來輸送時掉落， 如顆粒動作。 你/、匕衣面上並 【發明内容】 本發明提供—種光_絲置，其在藉由㈣光阻 、即所謂的旋塗裝置在透縣板上形成光阻時 會在透明基板之邊緣產生珠狀殘餘物，亦 生多餘的光阻殘餘層，或其至少能夠將珠狀： 物及光阻殘餘層之寬度及厚度最小化。 、 ::明亦提供一種空白光罩，其不具珠狀殘餘物及光 :于、曰’或其至少最小化了珠狀殘餘物及光阻 寬度及厚度。 ,本發明之實施例提供-種藉由將光阻劑塗布在基板上 亚旋轉基板來形成光阻之裝置，其係包括：旋钵，f且有 形成於其内之内部空間；夾頭，其係可旋轉地設置在㈣ 二間内，s亥基板被架设在該夾頭上；喷嘴，其係設置在夾 頭上’該喷嘴係用於將光阻劑喷麗於基板上；排氣管路， 其係連接至内部空間’並用於將内部空間内的空氣排放至 外部；及氣流導件，其係設置成鄰接該基板，並沿著該基 板側邊。 5/19 201205199 • » 於部分實施例中’該氣流導件包括下部導件，及分開 間隔且S又置在该下部導件上方之上部導件。 於，-實施例中’該下部導件之上表面係與該基板之 上表面設置在同一水平面。 ㈣Γ二實=中’該下部導件可具有延著該基板之側 邊連結之内側空間。 於本發明之更另-實施例中，係一種空白光罩之製造 =法’其係包括：藉由將光阻劑滴在透明基板上並旋轉該 基板，以在職板上形成総，射在婦縣板時，產 板Γ轉方向的相反方向、沿著該基板之側邊流 力之第-^ ’错以防止該光阻劑附著在該基板之側邊。 、在還要3實&例中，該第—氣流係透過藉由設置成 接鄰該基板__邊之下部導件，所沿著該基板之四個 側邊連結之内側空間來產生。 在又另-實施例中，在旋轉該基板時 t中央區域向該基板之邊緣區域流動之第二氣流， 一軋流在其他區域之流速係快於中央區域。 在進-步實施例中，該第二氣流係透過該 分^隔且設置在該下部導件上方之上部導件之間的^ 所產生。 ’' 在本發明之更另-實施例中，係—種空白光罩， 包括：金屬層’其係在翻基板之主要表面上；及光阻'，、 =係在該金·上’其中該級未形成於該透明基板側邊 在另-實施例中，在該透明基板 基板之邊緣區域之_光阻厚以〃'及4透明 予！差，係小於10000 Α 〇 6/19 201205199 在：：明之更另-實施例中，係一種空白光罩，其係 2層’其係在透明基板之主要表面上；及光阻， '、二’層上’其中形成在該透明基板之侧邊的該光阻 之”月基板之側邊的上端起，約為2腿以下。 t只〜例中，在該透明基板之中央區域及該透明 土，之邊龍域之_光阻厚度差，係小於 【實施方式】 入』=式係意圖提供來進一步了解本發明，其係併 n 明書之—部分。料圖式顯示本發明之示範 心例’顧文錢述—起轉本發明之原理。 =’參__圖式說明本發明之較佳實施例。 [先阻形成裝置] 圖4ΓΛΓ如本發明之光阻形成裝置之示意戴面圖，而 L 如本發明之光阻形成震置中的氣流導件之 用於示f截面圖。如本發明之光阻形成裝置20係 光阻。例如，該基板為透明基板5卜該 金屬層形成於具 裝置20麟—纽跡，該光阻形成 元件。同時，先罩其亦可用於製造半導體 千Π時，料阻形成裝置2G可 塗法用於在基板上形成各·。 4絲&，猎由疑 如本發明之金屬層52包括—種以上， 曰、半透明層、相轉移層、或其 「光 圖案化前或圖案化後者。 I違金屬層52可為 如本發明之光阻形成裝置2〇係用於 式係將先阻劑滴在透明基板51之主要表面=二= 7/19 201205199 > » 基板51旋轉以將透明基板51之士 I主 ’ 出去。 王罟表面上的光阻劑散布 如本發明之光阻形成裝置2〇產生 轉方向的反方向流動之第一氣流。該 基板 +走 該透明基板51之側邊流動，使多餘的X光J流強勁的沿著 黏附在透明基板之側邊。于、的先阻殘餘層53_2不會 如本發明之光阻形成裝置2Q產生自 == = =區域之第二氣流:第二氣流乾 媒塗布之先阻53,同時將光_更均勻的散布出去。 當自透明基板51之主要表面的 之第二氣流到達透明基板51之邊抑代向邊'、仏域 率變的更快。結果，第二氣二產:/二/流之速 邊緣區域的珠狀殘餘物53-1強勁的推 :明土板51之 小化了珠狀殘餘祕！之寬最卜邊的邊緣’最 因此，能夠最小化珠狀殘餘物53_】及光阻殘餘層抑 之寬度及厚度的如本發明之轨形成裝置2q ^ 21、，蛛22、夾頭23、排氣管路Μ、馬達25'壓力計26" 及排氣閥27。排氣幫浦(未圖示)係被提供來在排裔 尾端強制排氣。如本發明之夾頭 流導件28包括上部導件28_丨及下部導件28_2 噴嘴被固定在夾頭23，而在將光阻劑經由 噴鳥21滴在透明基板51上後，藉由馬達^旋轉 ^頭23與氣流導件28 —起旋轉同時，該光 的塗布於設置在透明基板51上的金屬層52。 ^ 該喷嘴21係設置在夾頭23上方，並將光阻 架設於夾頭23上的空白光罩.該空白光罩50係 8/19 201205199 夾頭23上’與朗23 -起旋轉。因而，該光 的散布至金屬層52上形成光阻53。 皮贗泛 係仙來控制排放幫浦所抽取之氣體的流動 (P蝴’及使用氣流自旋钵22之上部、透過排氣管路24 ^第二氣流。第二氣流沿著光阻53之整體表 據相關技藝，固定的第二氣流係均勾的沿著光阻53之敗= 相：依據本發明，第二氣流之流速在： 1時的流㈣快。因而，在透明基板51之邊緣 = I:被強勁，外側’而多餘的_^^ 朱狀殘餘物53-1的寬度及厚度被最小化。 ㈣’以透板51之旋轉方向的反方向沿著透明美 :二之側邊流動之第一氣流’係藉由透明基板51之旋i 皮產生。该第-氣流並非自外部供 明基板51之旋轉的相對 J里解為依據透 加黏附至透明基邊韻1流防止光阻殘餘層 =成有金屬層52之透明基板51係被固定在失頭B 流料氣包置在接鄰在透明基板51之側邊的氣 部_8^^ 部導件叫及設置在上 • 附28]下方之下部導件28.2。該上部導件叫料f 在献金屬層52表現之位置。 守又置 面，以在牛^表面係設置成高於金屬層52之上表 透明基板5 w Λ、及錢層5 2之__定空隙。自 係。^二域向邊親域流動的第二氣流通過空 層52之^二;主在第二氣流通過上部導件瓜1及金屬 之間的空隙時變得更快。第二氣流在接近光阻53之 9/19 201205199 • t 邊緣區域，即珠狀殘餘物53_1時，強勁的流動。珠狀殘餘 物53-〗之宽度在藉由第二氣流向透明基板51之邊緣移動時 變得更窄’且部分珠狀殘餘物53-1自透明基板5】掉落，並 與第二氣流透過空隙一起排放。 依據本發明’在上部導件28-1之下表面及金屬層之上 表面之間的空隙在約〇.5 mm至約1〇 mm範圍時，珠狀殘餘 物53-1之寬度可被有效的減低。在該空隙約為1〇mm以上 時，減低珠狀殘餘物53_1之寬度的效果變小。原因為通過 寬空隙之氣流的流速不快◦在空隙約為〇 5 mm以下時，珠 狀殘餘物53-1的寬度變得更寬。由於氣流未通過窄空隙並 藉由撞擊到上部導件叫之牆面而產生涡流，使珠狀殘餘 物53-1變得更寬。 如本發明之光阻形成裝置20中，在第二氣流快速通過 上部導件28-1及下部導件28_2間之空隙時，珠狀殘餘物 53-1之寬度及厚度被最小化。同時，珠狀殘餘物5；M之發 生可僅藉由上部導件28-1而無下部導件28_2來被減少。然 而’若僅藉由上部導件28-】會難以減少形成於透明基板51 之側邊的光阻殘餘層53-2之寬度。 如圖4A齡，下部導件28-2係設置成接鄰透明基板 51之側邊，並可具有開口向透明基板51之側邊，且水平地 連結之内側空間。第-氣流以依據透板51之旋轉的旋 轉方向之相反方向’通過下部導件28_2之連結的内側空 間。第-氣流通過下部導件28·2之内側空間強勁的沿著透 明基板51之側邊流動。結果，可減少光阻劑向透明基板51 之側邊的流動。 如圖4B I頁示’下部導件28_2可具一形狀，其具自透 10/19 201205199 明基板51之側邊向其相反側穿透之内側空間。如 落 示，下部導件28-2可具一形狀，其具開口向透= 之側邊且在其相反侧向下突出之連結的内側空間^圖4d 顯不，下部導件28_2之截面可具有平坦倾。同時 及夹頭23之間的空間’與為了固定透明 基板51 ’失頭23可具有向如圖4C及4D之1#止 突出之形狀。 .之下部導件28-2 下部導件28-2之上表面可設置成與金屬層”之上表面 相同高度。然而，高度並非必須相同，而是^钟 ^古 或略低於金屬層52之上表面。雖然下部導件28^可緊^ 附著於透明基板51之側邊或金屬層52之側邊，其間二空 間並不需要完全靠近。即使光阻劑在透明基板51及下邻^ 件瓜2之間流動，由於第-氣流沿著下部導件况2之連社 ，使光_餘層加不細著至透明基^ ^導件28-2之連結的内側空間的垂直空隙可為〇5 小於透明基板51之厚度。下部導件28_2之連 =空間的垂直空隙可在約0.5咖至約& 内。當内側空間之垂直空隙小於約〇5_時 2 法輕易的沿著下部導件28-2之内側空間流動。當内側：間 之垂直空隙大於透明基板51之厚度 ' 田内側工間 會魏。 該之流速不 _=透之主要表面流向側邊，並形成光 =::、:：!係藉由使用如本發明之光阻 53切會形成於下部導 28_2之上和而不會形成於第—氣流流動之下部導件 Π/19 201205199 的内側空間中。 .· U之部導件28_2之上表面_ 同時，^且下刪28·2的取厚度更薄的 被最小化。51阻_53·2之紐及厚度可 以下。1方==下部導件28·2之上板厚度可為約】_ 部導件wit件瓜2之该太薄時會容易受損，下 件28·2之上板厚度可為約G.5 _以上。 依據本發明’第二氣流之流速藉由氣流導件Μ 會變，在光阻層53咖 古〜“冰 了 逐月暴扳51之旋轉方向的相反 的ιΙΓ之第一氣流’以高流速流過下部導件28_2之連社 =側空間。第-氣流強勁的沿著透明基板51之側邊流 動，以防止光阻劑流下至透縣板51之側邊上。因而，第 一乳流防止多餘姑阻殘餘層附著至透縣板51之側邊。 圖5為顯示如本發明之光阻形成裝置之爽頭的平面 圖。空白光罩50被架設在夾頭(未圖示)上，氣流導件“係 以圓弧形形成在夾頭的四個方向。由於通常使用之空白光 罩50為尺寸6χ㈣.25英时之方形，為了在旋轉空白光罩 5〇時均勻的將離心力施加在空白鮮％上，氣流導件28 可成形為圓弧形。然而，其形狀不必限制為圓弧形，而可 做出各種變化且不偏離本發明之精神。 〃透明基板53係被架設在夾頭上並在單一方向旋轉，（以 箭頭1標示）。第-氣流2係在透縣板53之旋轉方向之 相反方向產生。第-氣流沿著透明基板之側邊流經下部導 件之連結的_空間。由於下部導件28_2之關空間被連 12/19 201205199 結’第-氣流可輕㈣通過下部導件28_2之 —圖6為顯示空白光罩之截面示意圖，其令光阻於依 使用本發明之光阻形成裝置形成。當光阻5心 使用本發明之光阻形成裝置2〇形成在空白光罩5〇上'日: 於咖基板51之邊緣區域的珠狀殘餘物二 :者於透明基板51之側邊的光阻殘餘層 3-2之見度R可減少至約2 mm以下。珠狀殘餘物$ 形成於光阻層S3之邊緣區域，且可具有小於光 ^ 分之厚度加10000 A之厚度。 天°丨 當光阻53賴由使用典型光阻形成裝置1G 珠狀殘餘物53-1之寬度E為約2〇〇〇_以上，发二 於中央部分之厚度加15_ A，而光阻殘餘層 在透明基板51之整個側邊，且寬度為約6 4_。”成 因此’以如本發明之光阻形成裝置2 Q製造之 5〇 ’由於最小化了珠狀殘餘物糾之寬度及厚度，而 了可形成圖案之有效面積。同時’因減少了珠狀殘 ^ 及光=餘層Μ之寬度及厚度，而可減化__ 53-!及光阻殘餘層53·2掉落而產生之顆粒。因而，】2 發明可製造高品質之空白光罩50。 蘇本 (實驗例） 依據本實驗例，形成有〇系金屬層之尺寸約6 英对的透明紐，餘設在安財圖4續示之氣 的 夾頭上，而光阻係形成於金屬層上。上邱 干的 係安裝成在其間具有約2随之空隙，而:部導件 間之垂直間隙為約lmm。同時，下部導件之上表面係^ 於金属層之表面。實驗係在下部導件之上板厚度分別改= 13/19 201205199 »· »201205199 * VI. Description of the Invention: [Technical Field] The present invention relates to a device for forming a photoresist, a blank mask, and a method for manufacturing a blank mask, and more particularly to a light-forming method a resisting device capable of minimizing the width and height of the edge bead formed on the edge of the substrate and the photoresist residual layer attached to the side of the substrate, and relating to a blank mask, and A method of manufacturing a blank mask. [Prior Art] A photomask for manufacturing a photolithography process of a semiconductor element is manufactured by patterning a metal layer of a blank mask or the like. The saponin is composed of a light-shielding layer, a translucent layer, and a phase transfer layer or the like formed on a rectangular glass substrate, and the photoresist is uniformly coated thereon. The blank reticle is usually manufactured by a method in which a transparent metal plate is formed on the plate, and a photoresist is dropped on the metal stalker to rotate the substrate to make the photoresist to the base two. A photoresist is applied to the metal layer. The device for forming a photoresist by the method of C is generally called a spin coating device, and the photoresist layer is in a typical crucible shape; on the upper side, due to the surface phase of the light (4) and the metal layer of the substrate = : The edge part of the substrate will form an unusually thick ball and the second thing will be widened in the main picture in the mask. The turning point, bar code or the like acts on its 'electric frame, extends to the edge of the reticle' and is patterned to be from the blank, and is cut and cut. Therefore, the difficulty of patterning from the edge of the mask to the width of the multi-residue residue is greater than about __. 3/19 201205199 • * The above problem 'Typical use of repeated exposure secondary map method', while increasing the exposure time, but also reducing the square == plus yield is still reduced, because the secondary pattern Wang L complex, therefore, the blank mask Manufacturing cost π Fig. 1 is a view showing a photoresist forming device type resistive device 10 which is typically used, including a nozzle, a spinner, a spinner, a ventilating pipe, a pressure gauge, and an exhaust gas. The secret set 10 has a gas flow through the exhaust line 14 and the spin spider 1 is installed: the gas 10 is designed to pass the second (four) (four) flow '(four) (four) dry photoresist. To use the typical photoresist forming device 10 In the empty: light metal layer or the like of the blank mask 5. Tied i 22 = through the 11-shirt blank mask 5. Pan two to the light _ lend: force wide = push to the level of the table The secret force gathers at the edge of the blank mask 50 and forms a bead residue. The light-emitting portion of the light-emitting portion is intended to be sprayed in the center of the metal layer 52. The light resistance is rotated from the central portion of the transparent substrate 51. The transparent substrate 51 is evenly coated with the transparent substrate 51. When it reaches the edge, it is scattered and distributed. Into the unnecessary photoresist residual layer 53 agents to the side of the substrate wrapped in the central portion of the photoresist is also soon to start welding. 1 edge of the photoresist than the light of the 5th 旋 射 移动 5 5 5 5 5 5 5 5 5 The photoresist is dispersed again from the blank central portion, and the rotation speed becomes faster. The first resist from the emperor is gathered on the dried photoresist 201205199' and dried again, and the above-mentioned system residue is repeated. -, the width of the substrate side ===== bead residue - the area of the effect pattern. _, bead _ = the smell in the mask - (4) 3-1 and the residual layer of the photoresist The white hood 50' is dropped when transported through a phase-in or the like, such as a particle action. You/, 匕 面上 并 发明 发明 发明 发明 发明 【 【 【 【 【 【 【 【 【 【 When a photoresist is formed on the plate through the (4) photoresist, the so-called spin coating device, a bead residue is generated at the edge of the transparent substrate, and an excess photoresist residue layer is generated, or at least the bead can be Shape: The width and thickness of the residual layer of the object and the photoresist are minimized. :: Ming also provides a blank mask that does not have a bead shape Residues and light: 曰, 曰' or at least minimize the bead residue and the photoresist width and thickness. The embodiments of the present invention provide a method for forming a sub-rotating substrate by coating a photoresist on a substrate. a photoresist device comprising: a rotary cymbal, and having an inner space formed therein; a collet rotatably disposed in the (four) two, the s-substrate is mounted on the collet; the nozzle, It is disposed on the chuck 'the nozzle is used to spray the photoresist onto the substrate; the exhaust pipe is connected to the internal space' and is used to discharge the air in the internal space to the outside; and the air flow guide It is disposed adjacent to the substrate and along the side of the substrate. 5/19 201205199 • » In some embodiments, the airflow guide includes a lower guide, and is spaced apart and S is placed on the lower guide Upper upper guide. In the embodiment, the upper surface of the lower guide is disposed at the same level as the upper surface of the substrate. (d) Γ二实=中' The lower guide may have an inner space that is joined to the side of the substrate. In a further embodiment of the present invention, a method of manufacturing a blank mask includes: forming a flaw on a job board by dropping a photoresist onto a transparent substrate and rotating the substrate, In the case of the Fenxian board, the opposite direction of the direction of the sheet is reversed, and the first step along the side of the substrate is to prevent the photoresist from adhering to the side of the substrate. In the case of the third embodiment, the first airflow is generated by being disposed adjacent to the lower guide of the substrate __ along the inner space of the four sides of the substrate. In still another embodiment, the second airflow flowing from the central region to the edge region of the substrate when the substrate is rotated, the flow rate of one of the rolling streams in the other regions is faster than the central region. In an alternate embodiment, the second air flow is generated by the separation between the upper guides disposed above the lower guide. In a further embodiment of the invention, a blank mask comprises: a metal layer 'on a major surface of the flip substrate; and a photoresist ', = in the gold The stage is not formed on the side of the transparent substrate. In another embodiment, the thickness of the photoresist in the edge region of the transparent substrate is transparent to 〃' and 4! The difference is less than 10000 Α 〇 6/19 201205199 In the following: In the embodiment, it is a blank reticle, which is a two-layer 'on the main surface of the transparent substrate; and the photoresist, ', two The upper layer of the side layer of the "light layer" formed on the side of the transparent substrate is about 2 legs or less. In the example, the central region of the transparent substrate and the transparent portion Soil, the edge of the dragon domain _ photoresist thickness difference, is less than [Embodiment] Into the formula is intended to provide further understanding of the present invention, which is a part of the book. The drawing shows the demonstration of the present invention The following is a description of the preferred embodiment of the present invention. [Pre-resistance forming device] Figure 4 is a schematic representation of the photoresist forming device of the present invention. FIG. 1 is a cross-sectional view of the gas flow guiding member in the light-shielding formation of the present invention. The photoresist forming device 20 of the present invention is a photoresist. For example, the substrate is a transparent substrate 5 The metal layer is formed on the device 20-neon, which forms the component. When it is also used in the manufacture of a semiconductor mill, the material resistance forming device 2G can be applied to form each substrate on the substrate. 4 Wire & The metal layer 52 suspected of the present invention includes more than one type, 曰, half The transparent layer, the phase transfer layer, or the "light patterning before or patterning the latter. The metal-inhibiting layer 52 may be a photoresist forming device 2 according to the present invention, and the first resist is dropped on the transparent substrate 51. The main surface = two = 7/19 201205199 > » The substrate 51 rotates to take out the transparent substrate 51. The photoresist on the surface of the wafer is dispersed as in the photoresist forming device 2 of the present invention. The first air flow flowing in the opposite direction. The substrate + flows away from the side of the transparent substrate 51, so that the excess X-ray J flow strongly adheres to the side of the transparent substrate. The photoresist forming device 2Q of the present invention generates a second airflow from the ==== region: the first airflow dry coating is applied to the first resistor 53, while the light is more evenly dispersed. When the self-transparent substrate 51 is dominant The second airflow of the surface reaches the side of the transparent substrate 51 and suppresses the edge side, 仏The rate of the domain becomes faster. As a result, the second gas production: /2 / the speed of the edge of the edge of the bead residue 53-1 strong push: the clay plate 51 is reduced by the pearl residue! The most edged edge 'mostly, the bead residue 53_】 and the width and thickness of the photoresist residual layer can be minimized as in the present invention. The rail forming device 2q ^ 21, the spider 22, the chuck 23, the exhaust Piping, motor 25' pressure gauge 26" and exhaust valve 27. An exhaust pump (not shown) is provided to force exhaust at the tail end of the drain. The chuck flow guide 28 of the present invention includes The upper guide 28_丨 and the lower guide 28_2 are fixed to the collet 23, and after the photoresist is dropped on the transparent substrate 51 via the bird 21, the motor 23 rotates the head 23 and the air flow guide 28 At the same time as the rotation, the light is applied to the metal layer 52 provided on the transparent substrate 51. ^ The nozzle 21 is disposed above the collet 23 and mounts the photoresist on the collet 23. The blank mask 50 is rotated on the 8/19 201205199 collet 23. Thus, the light is scattered on the metal layer 52 to form the photoresist 53. The skin is controlled by the genus to control the flow of the gas extracted by the discharge pump (P butterfly' and the upper portion of the airflow spin 钵22, the second airflow through the venting line 24. The second airflow along the photoresist 53 According to the related art, the fixed second airflow system is hooked along the photoresist 53. = According to the present invention, the flow velocity of the second airflow is faster at 1 (4). Thus, on the transparent substrate 51 Edge = I: is strong, the outer side and the excess _^^ The width and thickness of the Zhu-like residue 53-1 are minimized. (4) 'In the opposite direction of the direction of rotation of the transparent plate 51 along the transparent beauty: the side of the second The first airflow flowing along the side is generated by the spiral of the transparent substrate 51. The first airflow is not caused by the relative J-solution of the rotation of the external substrate 51 from the outside, and is prevented from adhering to the transparent base. Residual layer of photoresist = transparent substrate 51 formed with metal layer 52 is fixed in the head B. The gas is placed on the side of the transparent substrate 51. The guide is called Above • Attached 28] below the lower guide 28.2. The upper guide is called the material f in the position of the metal layer 52. The surface of the cow is set to be higher than the surface transparent substrate 5 w 金属 of the metal layer 52, and the gap of the money layer 52. The second airflow flowing through the two domains to the side domain passes through the space. The layer 52 is two; the main air becomes faster when the second airflow passes through the gap between the upper guide member 1 and the metal. The second airflow is near the edge of the photoresist 53 9/19 201205199 • t, that is, the bead When the residue 53_1 is strong, the width of the bead residue 53-〗 becomes narrower when moving toward the edge of the transparent substrate 51 by the second gas flow' and the partial bead residue 53-1 is from the transparent substrate 5 Dropped and discharged with the second gas stream through the gap. According to the present invention, the gap between the lower surface of the upper guide 28-1 and the upper surface of the metal layer is in the range of about 〇5 mm to about 1 mm. The width of the bead residue 53-1 can be effectively reduced. When the void is about 1 mm or more, the effect of reducing the width of the bead residue 53_1 becomes small. The flow rate of the gas stream passing through the wide gap is obtained. When the gap is about 〇5 mm or less, the width of the bead residue 53-1 becomes wider. The narrow gap and the eddy current are generated by impinging on the wall surface of the upper guide member, so that the bead residue 53-1 becomes wider. In the photoresist forming device 20 of the present invention, the second air current rapidly passes through the upper portion. When the gap between the guiding member 28-1 and the lower guiding member 28_2 is small, the width and thickness of the bead residue 53-1 are minimized. Meanwhile, the bead residue 5; M can occur only by the upper guiding member 28- 1 without the lower guide 28_2 is reduced. However, it is difficult to reduce the width of the photoresist residual layer 53-2 formed on the side of the transparent substrate 51 only by the upper guide 28-. The lower guide 28-2 is disposed to be adjacent to the side of the transparent substrate 51, and may have an inner space that is open to the side of the transparent substrate 51 and horizontally coupled. The first airflow passes through the inner space of the joint of the lower guide 28_2 in the opposite direction of the direction of rotation of the rotation of the diffuser 51. The first airflow flows strongly along the side of the transparent substrate 51 through the inner space of the lower guide 28·2. As a result, the flow of the photoresist to the side of the transparent substrate 51 can be reduced. As shown in Fig. 4B, the lower guide 28_2 may have a shape with an inner space penetrating from the side of the substrate 51 to the opposite side. As shown, the lower guide member 28-2 may have a shape with an inner space in which the opening protrudes toward the side of the through-hole and protrudes downward on the opposite side thereof. FIG. 4d shows that the cross section of the lower guide member 28-2 may be Has a flat tilt. At the same time, the space ' between the collet 23 and the head 23 for fixing the transparent substrate 51' may have a shape protruding toward 1# as shown in Figs. 4C and 4D. The lower surface of the lower guide 28-2 may be disposed at the same height as the upper surface of the metal layer. However, the height does not have to be the same, but is less than or slightly lower than the metal layer 52. The upper surface 28. Although the lower guiding member 28 can be closely attached to the side of the transparent substrate 51 or the side of the metal layer 52, the two spaces do not need to be completely close together. Even if the photoresist is on the transparent substrate 51 and the lower side ^ The flow between the pieces of melon 2, because the first air flow along the lower guide condition 2, the vertical gap of the inner space of the connection of the transparent layer to the transparent base 〇5 is smaller than the thickness of the transparent substrate 51. The vertical gap of the connection of the lower guide 28_2 can be about 0.5 ga to about & and when the vertical gap of the inner space is less than about 〇5_, the method is easily along The inner space of the lower guide member 28-2 flows. When the inner side: the vertical gap between the two is larger than the thickness of the transparent substrate 51, the inner side of the field will be Wei. The flow rate is not _= the main surface flows to the side and forms light = ::, ::: is formed on the lower guide 28_2 by using the photoresist 53 as in the present invention and It will not be formed in the inner space of the lower part of the first airflow flow guide Π/19 201205199. . . . the upper surface of the guide part 28_2 of the U _ at the same time, and the lower thickness of the lower part of the 28·2 is minimized. 51. Resistance _53·2 of the new and thickness can be. 1 square == lower guide 28 · 2 upper plate thickness can be about _ _ part guide wit piece melon 2 which is too thin will be easily damaged The thickness of the upper plate of the lower piece 28·2 may be about G.5 _ or more. According to the invention, the flow velocity of the second air flow is changed by the air flow guiding member, and the light is in the photoresist layer 53. The first airflow of the opposite ι of the direction of rotation of the blade 51 flows at a high flow rate through the side space of the lower guide 28_2. The first air flow strongly flows along the side of the transparent substrate 51 to prevent the photoresist from flowing down to the side of the permeable plate 51. Thus, the first emulsion flow prevents the residual residual layer from adhering to the side of the plateau plate 51. Fig. 5 is a plan view showing the cool head of the photoresist forming apparatus of the present invention. The blank mask 50 is mounted on a chuck (not shown), and the air flow guides are formed in a circular arc shape in the four directions of the chuck. Since the blank mask 50 is generally used, the size is 6 inches (four). 25 inches In order to uniformly apply centrifugal force to the blank fresh % when the blank mask 5 is rotated, the air flow guide 28 can be formed into a circular arc shape. However, the shape is not necessarily limited to a circular arc shape, and various changes can be made. Without departing from the spirit of the invention, the transparent substrate 53 is erected on the chuck and rotated in a single direction (indicated by arrow 1). The first airflow 2 is generated in the opposite direction of the direction of rotation of the permeable plate 53. - the airflow flows along the side of the transparent substrate through the connected space of the lower guide. Since the closed space of the lower guide 28_2 is connected to 12/19 201205199, the knot-the airflow can be lightly (four) through the lower guide 28_2. 6 is a schematic cross-sectional view showing a blank mask which is formed by using the photoresist forming apparatus of the present invention. When the photoresist 5 is formed on the blank mask 5 by using the photoresist forming apparatus 2 of the present invention' Day: Beads on the edge area of the coffee substrate 51 Remaining 2: The visibility R of the photoresist residual layer 3-2 on the side of the transparent substrate 51 can be reduced to about 2 mm or less. The bead residue $ is formed in the edge region of the photoresist layer S3, and may have The thickness is less than the thickness of the light plus 10000 A. The thickness of the photoresist is determined by the use of a typical photoresist forming device 1G. The width E of the bead residue 53-1 is about 2 〇〇〇 _ or more. The thickness of the central portion is increased by 15_A, and the residual layer of the photoresist is on the entire side of the transparent substrate 51, and the width is about 64%. Thus, it is manufactured by the photoresist forming device 2Q of the present invention. The width and thickness of the bead residue are minimized, and the effective area of the pattern can be formed. At the same time, the particles produced by the falling of the __ 53-! and the photoresist residual layer 53·2 can be reduced by reducing the width and thickness of the bead residue and the light layer. Thus, the invention can produce a high quality blank mask 50. Su Ben (Experimental Example) According to the experimental example, a transparent neon having a lanthanide metal layer of about 6 inches in size is formed, and the remaining is disposed on the chuck of the gas continued in An Cai Figure 4, and the photoresist is formed on the metal layer. on. The upper Qiu dry system is installed with about 2 subsequent gaps therebetween, and the vertical gap between the guides is about 1 mm. At the same time, the upper surface of the lower guide is attached to the surface of the metal layer. The thickness of the plate on the lower guide is changed to 13/19 201205199 »· »
I 為約2.0 mm、KO mm及0.5麵時實施。使用之光 】·Ρ3500 (製造商：東京應化工業）。實驗例中，光阻之目^厚 度為約4650 A，而預定之旋轉數則是施家來得到目標^ (以下，在比較例及參考例亦使用相同條件）。 又 參照圖6，當下部導件之上板厚度為約2 〇 _時 留在透明基板5】之側邊的光阻殘餘層53_2之寬度尺， 明基板51之側邊的上端起為約2.〇1細。當下部導^叔 厚度為約】.0 mm時，光阻殘餘層53_2之寬度 :當下部導件之上板厚度為約〇.5mm時，袭居 53-2之寬度R為約〇 5醜。紐之 纖層 46= A ’且所量測到之邊緣區域的層厚 之層厚度加約10000 A。 兴〇P刀 未形成低於下部導件之上板厚度 且隨著下部導件之上柘， 坟餘層53-2， 可被最小化。厚度更細，光阻殘餘層53·2之寬度 (比較例） 阻準備具未安裝氣流導件之夾頭的典型光 ㈣透顿板H成有Cr系金屬層之尺寸約6x6x〇.25英 具相同厚2塗1程上述實驗例相同之條件下，實施得到 如圖7顯示，依據比較例 珠狀殘餘物53-1的會# P & 二白光罩中形成之 15000A以上。光阻餘% 、2 ^〇〇〇_以上，且厚度約 個側邊。 雄盾53 2係附著於透明基板51之整 (參考例） 本參考例中，準備如圖8顯示之光阻形成裝置，其中 14/19 201205199 間未連二=有部導…内甸空 系金屬層之尺寸: t驗例相同之條件下，實施得到具相:厚产之先::上 上部導件％及下部導件㈣之空 之寬結果，如圖9顯示’減少了珠 二 ί。然而，由於光阻殘餘層53_2附著於透明 蝴之側邊並塗布在瓣板51的整個側邊，此結果 屬声!Π1!使用如本發明之光阻形成裝置形成在金 形蝴嶋=====珠狀殘餘物及 狀殘餘減級殘層，或者可最小化珠 加了狀殘餘物之寬度及厚度被最小化，而增 效面積。因而，提升了空白光罩之可靠 笑而’由於因珠狀殘餘物及光阻殘餘層自透明基板掉 洛而產生之顆粒減少，而可製造高品質之空白光罩。 以上揭7FS體應視為麻性㈣限触，*附加之 ίΐ:範：涵=有嶋於本發明的實際精神綱 範圍;内’本㈣之範輕以後面申料·财其等= 了允权最廣解釋決定，且不應约束或限制於上述詳細說 明0 15/19 201205199 【圖式簡單說明】 圖1為顯示典型光阻形成裝置之示意截面圖。 圖2為顯示以典型光阻形成裝置形成之光阻的組態之 示意截面圖。 圖3為顯示如本發明之光阻形成裝置的示意截面圖。 圖4A至4D為顯示如本發明之氣流導件的實施例之截 面圖。 圖5為顯示如本發明之光阻形成裝置的平面圖。 圖6為顯示光阻係依實驗例形成之空白光罩的示意戴 面圖。 圖7為顯示光阻係依比較例形成之空白光罩的示意截 面圖。 圖8為顯示依照參考例之光阻層形成裝置之示意截面 圖。 圖9為顯示光阻係依參考例形成之空白光罩的示意截 面圖。 【主要元件符號說明】 1 箭頭 2 第一氣流 10 光阻形成裝置 11 喷嘴 12 旋钵 13 夾頭 14 排氣管路 15 馬達 16 壓力計 16/19 201205199 17 排氣閥 20 光阻形成裝置 21 喷嘴 22 旋砵 23 夾頭 24 排氣管路 25 馬達 26 壓力計 27 排氣閥 28 氣流導件 28-1 上部導件 28-2 下部導件 50 空白光罩 51 透明基板 52 金屬層 53 光阻層 53-1 珠狀殘餘物 53-2 光阻殘餘層 E 珠狀殘餘物53-1之寬度 R 光阻殘餘層53-2之寬度 17/19When I is about 2.0 mm, KO mm, and 0.5 side, it is implemented. Light used 】·Ρ3500 (manufacturer: Tokyo Yinghua Industry). In the experimental example, the thickness of the photoresist is about 4650 A, and the predetermined number of rotations is the target to obtain the target ^ (hereinafter, the same conditions are used in the comparative example and the reference example). Referring to FIG. 6, when the upper guide member has a thickness of about 2 〇_, the width of the photoresist residual layer 53_2 remaining on the side of the transparent substrate 5], the upper end of the side of the substrate 51 is about 2 .〇1 is fine. When the thickness of the lower guide is about 0.02 mm, the width of the residual layer of the photoresist 53_2: when the thickness of the upper guide is about 〇5 mm, the width R of the ridge 53-2 is about 〇5 ugly. . The layer of the layer 46 is A' and the thickness of the layer thickness of the edge region measured is about 10000 A. The X-ray P-knife is not formed lower than the upper plate thickness of the lower guide and the grave layer 53-2 can be minimized as the lower guide is turned over. Thinner thickness, width of resistive residual layer 53·2 (Comparative example) Typical light for preparing a chuck with no airflow guide installed (4) The platen H is a size of a Cr-based metal layer of about 6x6x〇.25英Under the same conditions as in the above experimental examples with the same thickness of 2 coats, the results are as shown in Fig. 7, which is 15000 A or more formed in the #P & two white mask according to the comparative example bead residue 53-1. The remaining part of the photoresist is 2 ^ 〇〇〇 _ or more, and the thickness is about the side. The male shield 53 2 is attached to the transparent substrate 51 (Reference example) In this reference example, a photoresist forming device as shown in Fig. 8 is prepared, in which 14/19 201205199 is not connected with a second guide. Dimensions of the metal layer: Under the same conditions as in the test case, the implementation of the phase: the first of the thick production: the width of the upper upper guide % and the lower guide (four), as shown in Figure 9 'reduced the beads two ί . However, since the photoresist residual layer 53_2 is attached to the side of the transparent butterfly and is coated on the entire side of the flap 51, the result is sound! Π1! formed using a photoresist forming apparatus according to the present invention in a gold-shaped butterfly == === Bead residue and residual residual degraded residue, or minimize the width and thickness of the bead-added residue to minimize the synergistic area. Therefore, the reliability of the blank mask is improved and the high-quality blank mask can be manufactured due to the reduction of particles due to the loss of the bead residue and the residual layer of the photoresist from the transparent substrate. The above 7FS body should be regarded as hemp (4) limited touch, *additional ΐ: Fan: 涵= 嶋 嶋 嶋 嶋 嶋 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The right to explain the decision is the most extensive and should not be constrained or limited to the above detailed description. 0 15/19 201205199 [Simplified Schematic] FIG. 1 is a schematic cross-sectional view showing a typical photoresist forming apparatus. Fig. 2 is a schematic cross-sectional view showing the configuration of a photoresist formed by a typical photoresist forming device. Figure 3 is a schematic cross-sectional view showing a photoresist forming apparatus according to the present invention. 4A through 4D are cross-sectional views showing an embodiment of a gas flow guide according to the present invention. Figure 5 is a plan view showing a photoresist forming apparatus according to the present invention. Fig. 6 is a schematic perspective view showing a photomask formed by a blank mask according to an experimental example. Fig. 7 is a schematic cross-sectional view showing a blank mask formed by a comparative example of a photoresist. Fig. 8 is a schematic cross-sectional view showing a photoresist layer forming apparatus according to a reference example. Fig. 9 is a schematic cross-sectional view showing a blank mask in which a photoresist is formed according to a reference example. [Description of main components] 1 arrow 2 first airflow 10 photoresist forming device 11 nozzle 12 rotary 13 chuck 14 exhaust pipe 15 motor 16 pressure gauge 16/19 201205199 17 exhaust valve 20 photoresist forming device 21 nozzle 22 Rotary 23 Chuck 24 Exhaust line 25 Motor 26 Pressure gauge 27 Exhaust valve 28 Air flow guide 28-1 Upper guide 28-2 Lower guide 50 Blank mask 51 Transparent substrate 52 Metal layer 53 Photoresist layer 53-1 Bead residue 53-2 Residual photoresist layer E Width of bead residue 53-1 R Width of resistive residual layer 53-2 17/19