TW201204500A - Laser processing apparatus, method of processing products to be processed, and method of dividing products to be processed - Google Patents

Abstract

This invention provides a laser processing apparatus capable of suppressing machining scratches and realizing the starting point for dividing a work piece more precisely. The laser processing apparatus is equipped with a light source emitting pulsed laser beam and a carrying platform for carrying the work piece, and further has a cooling mechanism for cooling the carrying surface of the work piece carried on the carrying platform. Under the condition that the work piece is carried on the carrying platform and the carrying face is cooled by the cooling mechanism, the carrying platform is moved in such a manner that the irradiated region of laser beam per unit pulse on the processing surface opposite to the carrying surface is discrete, and the pulsed laser beam irradiates on the work piece. In this way, cleavages or cracks on the work piece will be created between the irradiated regions in sequence for forming the starting point of division on the work piece.

Description

201204500 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a laser processing method for processing a workpiece by irradiating a laser beam and a laser processing apparatus using the laser processing method. [Prior Art] As a technique for processing a workpiece by irradiating a pulsed laser beam (hereinafter also referred to simply as laser processing or laser processing technology), various types are known (for example, refer to Patent Document 1 to Patent Literature). 4). The content disclosed in Patent Document 1 is a method of forming a groove (disconnection groove) having a V-shaped cross section along a predetermined dividing line by laser ablation, and dividing the mold by using the groove as a starting point. On the other hand, the content disclosed in Patent Document 2 is that a laser beam in a defocused state is irradiated along a planned dividing line of a workpiece (divided body), and a scarring state is generated in the irradiated region. The fractured section is roughly V-shaped to melt the modified region (metamorphic region), and the method of dividing the workpiece by dividing the lowest point of the modified region as a starting point. When the division starting point is formed by the techniques disclosed in Patent Document 1 and Patent Document 2, in order to perform the subsequent division well, it is important to form a V-shaped surface having a uniform shape along the scanning direction of the laser beam, that is, the dividing line direction. (Heart profile or metamorphic zone profile). As a method to be applied thereto, for example, the irradiation of the laser beam is performed in such a manner that the irradiated region (beam spot) of the laser beam per pulse is repeated before and after. For example, when the most basic parameter repetition frequency (in kHz) of laser processing is set to R and the scanning speed (in mm/sec) is set to V, the ratio v/r of the laser processing becomes I54922.doc 201204500 In the technique disclosed in Patent Document i and Patent Document 2, in order to cause the beam spots to overlap each other, (4) the laser beam is irradiated and scanned under the following conditions. Further, Patent Document 3 discloses a method of aligning a light-converging point with a laser beam on a substrate having a laminated portion on the surface thereof, thereby forming a modified region inside the substrate, and setting the modified region as Cut off the starting point. Further, Patent Document 4 discloses that the laser beam scanning is repeated a plurality of times with respect to one separation line, and the groove portion and the reforming portion which are continuous in the direction of the separation line are formed above and below the depth direction, and A sub-continuous internal reforming unit in the off-line direction. On the other hand, Patent Document 5 discloses a processing technique using an ultrashort pulse laser beam having a pulse width of "...", and discloses the following aspects: by adjusting the position of the focused spot of the pulsed laser beam Forms a micro-melt formed from the surface cracks of the surface of the workpiece (plate body) over the surface, thereby forming a linear separation region formed by the melt marks. [Prior Art Paper] [ [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. 2006-9139 [Patent Document 2] Japanese Patent Laid-Open No. Hei. No. 2007-83309 [Patent Document 4] Japan Patent Publication No. 2008-98465 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2005-271563 [Draft] [Problems to be Solved by the Invention] 154922.doc 201204500 Using a laser beam to form a starting point of division The method of splitting the opener is more advantageous in terms of autonomy, high speed, stability, and high precision than the previously used mechanical cutting method, that is, the diamond scribing. However, the laser beam is formed by the prior method. Minute At the starting point, it is inevitable to form a so-called processing mark (laser processing mark) in the portion irradiated with the laser beam. The so-called "protection mark" refers to the deterioration of the material or structure after irradiation with the laser beam compared with before irradiation. The formation of the processing marks usually has a bad influence on the characteristics of the divided workpieces (partitioned sheets), and therefore it is preferable to suppress as much as possible. "The former laser disclosed by Patent Document 2 In the processing, a substrate made of a material having a hard brittleness and an optically transparent material such as sapphire is formed as a garnish of a light-emitting element structure such as a coffee structure, and an edge portion of the light-emitting element is divided by a wafer unit (a laser beam is divided at the time of division) In the portion irradiated, a processing mark having a width (four) or so and a depth of _ to several tens of _ is continuously formed. This processing mark absorbs light generated inside the light-emitting element, and there is a problem that the light-pumping efficiency of the element is lowered. This problem is particularly remarkable in the case of using a light-emitting element structure of a sapphire substrate having a high refractive index. The inventors of the present invention have found through rigorous research that when a laser beam is irradiated to a workpiece to form a starting point of separation, the processing mark can be appropriately suppressed by utilizing the opening or breaking property of the workpiece. Formation. In addition, it is found that the processing is preferably performed using an ultrashort pulse laser beam. In Patent Document 1 to Patent Document 5, the aspect in which the starting point of the division is formed by the splitting property or the cleavage property of the workpiece is not disclosed. On the other hand, in the process of dividing the starting point by the laser beam using the laser beam, the workpiece is divided into the deepest part of the workpiece by the front end portion of the dividing starting point in the process of dividing the workpiece by the wafer 154922.doc 201204500, so that the position can be improved. Segmentation is true. This is also the case when using a laser beam of ultrashort pulse. The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for processing a divided body capable of suppressing formation of a processing mark and forming a dividing starting point for more reliably forming a workpiece, and using the processing method Laser processing equipment. [Means for Solving the Problems] In order to solve the above problems, the invention according to a second aspect of the invention is a laser processing apparatus characterized by comprising a light source that emits a pulsed laser beam, and a stage on which a workpiece is placed, and further includes a cooling mechanism for cooling a mounting surface of the workpiece placed on the stage, placing the workpiece on the stage, and cooling the mounting surface by the cooling mechanism. And irradiating the irradiated region of each unit pulse light of the pulsed laser beam on the surface to be processed facing the mounting surface, moving the stage and irradiating the workpiece with the pulsed laser The light beam is thereby sequentially opened or split between the irradiated regions to form a workpiece, thereby forming a starting point for division on the workpiece. According to a second aspect of the invention, in the laser processing apparatus of the first aspect, the pulsed laser beam has an ultrashort pulse of a pulse width of psec. According to a third aspect of the invention, in the laser processing apparatus of the second aspect or the second aspect, the cooling mechanism is disposed at least when the laser beam is irradiated with the pulse 154922.doc 201204500 opposite to the workpiece. Below the stage, the cooling mechanism cools the stage from below to cool the mounting surface. According to a fourth aspect of the invention, in the laser processing apparatus of the third aspect, the cooling mechanism includes a Peltier element, and at least when the pulsed laser beam is irradiated with respect to the workpiece, The Peltier 7G is cooled by the Peltier element in a state in which the Peltier 7G is placed close to the stage, thereby cooling the mounting surface. According to a third aspect of the invention, in the laser processing apparatus of the third aspect, the boring portion is provided on a lower side of the stage, and the cooling mechanism is disposed adjacent to the stage Tunneling department. The invention of claim 6 is the laser processing apparatus according to the jth or 2 aspect, characterized in that: when the starting point for the above-mentioned dispensing is formed on the workpiece, 'the unit pulse light is formed differently At least one of the irradiated regions is formed in such a manner that the above-mentioned workpiece is cleaved or split easily in the adjoining direction. According to a seventh aspect of the invention, in the laser processing apparatus of the sixth aspect, the at least two regions to be irradiated are formed by two different splitting or splitting directions of the workpieces. Alternately. According to a sixth aspect of the invention, in the laser processing apparatus according to the sixth aspect of the invention, the entire region to be irradiated is formed along an easy direction in which the workpiece is opened or split. The invention of the ninth aspect of the invention is characterized in that, in the laser processing work piece to which the first or second technical solution is added, the starting point of the 154922.doc 201204500 for the above division is formed, the irradiated area is It is formed in a direction equivalent to the direction in which the above-mentioned workpiece is different from the opening or the cleavage is easy. According to a tenth aspect of the invention, a laser processing apparatus according to the first aspect of the invention is characterized in that: the unit pulse is irradiated to the irradiated position by the unit pulse light, and the unit pulse is irradiated immediately or simultaneously. In the invention, the invention is a processing method for forming a splitting point between the irradiated positions of the light, and the invention is characterized in that it is used to form a dividing point on the workpiece, and includes: a loading step, The workpiece is placed on the stage; and the step of irradiating the pulsed laser beam in each unit in a state where the mounting surface of the workpiece opposite to the stage is cooled The irradiated region of the pulsed light is irradiated onto the processed object so as to be discretely formed on the surface to be processed facing the mounting surface, whereby the processed object is sequentially opened between the irradiated regions. Splitting to form a starting point for segmentation on the above-mentioned object to be affixed. The invention of the twelfth technical solution is a processing method according to the second aspect, which is characterized in that: The above-mentioned pulsed laser beam has a pulse width of ultra-short pulse light of a grade. The invention of the thirteenth aspect is the processing method of the technical solution of the first or the twelfth aspect, which is characterized in that: in the above-mentioned irradiation step, the cooling mechanism is described The invention is a processing method according to the thirteenth aspect of the present invention, which is disposed under the above-mentioned stage, and is configured to cool the surface by using the cooling mechanism to cool the stage from below. The invention of the thirteenth aspect is 154922.doc 201204500 The cooling mechanism includes a Peltier element, and in the irradiating step, the substrate is cooled by the Peltier element in a state in which the material element is disposed close to the stage, thereby cooling the load. The invention of the fifteenth technical solution is the processing of the second aspect or the technical solution of the twelfth technical solution. The two irradiated regions formed by different unit pulse lights are used for the above-mentioned workpieces. The invention of the sixteenth aspect is the processing method of the fifteenth aspect, wherein the temple is located at least two of the above-mentioned photographs The invention is a method of processing according to the sixteenth aspect of the present invention, characterized in that the above-mentioned irradiated area is the same as the processing method of the sixteenth aspect of the present invention. The invention is a method of processing according to the first or the twelfth aspect of the invention, characterized in that the irradiated region is processed relative to the above. The invention is a method of processing according to the first or second aspect of the present invention, characterized in that the pulsed laser beam is made The exit source and the workpiece are relatively moved, and the outgoing direction of the pulsed laser beam is periodically changed in a plane perpendicular to the corresponding relative movement direction, thereby forming a sawtooth configuration relationship on the workpiece. a plurality of the above-mentioned illuminated areas. The invention of the twentieth aspect of the invention, wherein the processing method of the first aspect or the 12th aspect of the invention is 154922.doc 201204500, characterized in that: a plurality of emission sources of the pulsed laser beam are moved relative to the workpiece, and the method is The irradiation timing of the unit pulse light of each of the emission sources periodically changes, thereby forming a plurality of the irradiated regions satisfying the zigzag arrangement relationship on the workpiece. According to a twenty-first aspect of the present invention, in the processing method of the second aspect or the twelfth aspect of the invention, in the illuminating step, the impact or stress at the irradiation position is irradiated by each unit pulse light, and The above-described cleaving or the above-described cleaving occurs between the irradiated positions of the above-mentioned unit pulsed light which is irradiated or simultaneously irradiated. According to a twenty-second aspect of the invention, there is provided a method of dividing a workpiece, comprising: a placing step of loading a workpiece on a stage, and an irradiation step of: attaching to the workpiece The pulsed laser beam is irradiated to the irradiated region of each unit pulsed light so as to be discretely formed on the surface to be processed facing the mounting surface in a state in which the mounting surface is cooled relative to the mounting surface. The workpiece "by sequentially generating a split or split of the workpiece between the irradiated regions, thereby forming a starting point for dividing the workpiece; and a dividing step by The object to be processed in which the division starting point is formed by the irradiation step is divided along the division starting point. [Effects of the Invention] According to the invention of the first to second aspects, the formation of the processing marks due to the deterioration of the workpiece or the scattering of the workpiece can be controlled locally, and the workpiece can be processed actively. The split or split of the object can form a starting point of the split on the workpiece at a very high speed compared to the prior art. And by 154922.doc • 10· 201204500 can help make the energy of the pulsed laser beam' so that the front end of the splitting start point can be cooled to the cut surface of the workpiece? The starting point of the segmentation is formed more effectively, reaching a deeper part. In particular, the invention according to the seventh aspect, the ninth aspect, the sixteenth aspect, and the eighteenth aspect to the second aspect can be formed along the

„The team is concentrating on the formation of a light-emitting element such as an LED structure on a substrate made of a material that is hard and brittle and optically transparent, such as a field-adjusting stone, so that the south-emitting element can be formed by forming such a concave-convex shape on the divided section of the substrate. [Embodiment] <Embodiment of Processing> The principle of processing realized in the embodiment of the present invention shown below will be described. The processing performed in the present invention is simply a scanning pulse laser beam ( Hereinafter, it is also referred to simply as a laser beam and is irradiated onto the upper surface of the workpiece (the surface to be processed), thereby sequentially opening or splitting the workpiece between the irradiated regions of the respective pulses. The starting surface for the division (the starting point of the division) is formed on each of the continuous surfaces of the cleavage surface or the cleavage surface formed. Further, in the present embodiment, the cleavage means that the workpiece is processed along the crystal plane other than the cleavage surface. The phenomenon of roughly regular fracture, the corresponding crystal surface is called the cleavage plane. In addition, except for the microscopic phenomenon of the microscopic phenomenon along the crystal plane, there is also a crack along the macroscopic fracture. The situation in which the crystal orientation is determined. Depending on the substance, there are mainly only the opening, 154922.d〇c 201204500, etc. The material of the crack or the crack in the work, etc. Miscellaneous, does not distinguish between splitting, splitting, and cracking, but is collectively referred to as splitting/cracking. In addition, there is a case where the processing of such a state is also referred to as splitting/cracking J. The following is a hexagonal crystal with a broken workpiece. The single crystal material and the "axis axis" and the axis direction of the a3 axis are cleaved, and the case where the splitting is easy is taken as an example. For example, there is corresponding. Sapphire substrate, etc. The hexagonal crystal, the U-axis, and the a3 axis are at a position symmetrical with each other in the e-plane at an angle of 12 (). In the processing of the present invention, according to the direction of the multi-axis and the direction of the planned line (processing) The relationship between the predetermined directions is different and there are a plurality of patterns. The following description will be given of the patterns. In addition, the laser beam irradiated by each pulse will be referred to as unit pulse light in the following. <First processing pattern> First The processing pattern is any one of the 31-axis direction, the a2^ direction, and the called direction: the opening/split processing when the predetermined line is paralleled. It is simpler. 'System opening/breaking easy direction and processing line Fig. 1 is a schematic view showing a machining aspect of the first machining pattern. Fig. 1 illustrates a case where the a-axis direction is parallel to the planned line L. (4) indicates the ai axis in this case. Direction, a2 axis direction, a3 axis direction, and orientation of the planned line 1 Fig. 1 (b) shows a state in which the unit pulse light of the first pulse of the laser beam is irradiated onto the irradiated region RE丨 at the end of the planned line L. Generally speaking, the irradiation of unit pulsed light The extremely small area of the workpiece is directed to at», so the β-ray illumination will be equal to or higher than the illuminated area of the I54922.doc •12·201204500 (laser beam) of the unit pulsed light on the illuminated surface (4) Deterioration of substances in a wider range of fields • Hyun fusion • Evaporation removal, etc. However, if the irradiation time of the unit pulsed light, that is, the pulse width is set to be extremely short, it is smaller than the spot size of the laser beam and exists in the irradiated The object f' in the approximate central region of the region is scattered or deteriorated in the direction perpendicular to the illuminated surface due to the kinetic energy obtained from the irradiated laser beam. On the other hand, the reaction force accompanying the scattering is the first cause. The impact or stress generated by the irradiation of the unit pulsed light acts on the periphery of the irradiated area, in particular, the easy-to-clear/clearing easy direction, that is, the a-axis direction, the a2-axis direction, and the a3-axis direction. Although the appearance is kept in contact with the I state, some of them are slightly open or (4) 'or have not reached the degree of opening or cracking. ^There is a state of thermal distortion I inside. It can also be said that the unit pulse light of ultrashort pulse The irradiation system functions as a driving force for forming a weak-strength portion that is substantially linear in a plan view in a direction in which the opening/spliting is easy to open. In FIG. 1(b), the above-described respective splitting/cleaving easy directions are schematically indicated by broken arrows. The weak intensity portion wi of the +al direction which coincides with the extending direction of the processing predetermined line 1 among the weakly formed portions formed. Next, as shown in FIG. 1(c), if the second pulse of the laser beam is irradiated The unit pulse light forms the irradiated area RE2 at a position at a predetermined distance from the irradiated area RE1 at the predetermined line of processing, and similarly to the third pulse, the second pulse also forms a weak direction in the easy direction of opening/spliting. The strength portion, for example, forms a weak strength portion W2a in the -al direction and a weak strength portion W2b in the +al direction. On the other hand, the weak intensity portion W1 of the 154922.doc 201204500 is formed by the irradiation of the unit pulse light of the first pulse, and is present in the extending direction of the weak intensity portion W2a. That is, the direction in which the weak-strength portion W2a extends becomes a portion which can be cleaved or split by using energy smaller than other portions. Therefore, in actuality, when the unit pulse 1 of the second pulse is irradiated, the impact or stress generated at this time propagates to the easy-opening/cleaving easy direction and the weak portion existing before, from the weak intensity portion W2a to the weak intensity portion W1, A complete split or split at the moment of general illumination. Thereby, the split/cleavage plane C1 shown in Fig. i(4) is formed. Further, 劈 P 歼 1 / cleavage surface C1 may be formed to a depth of several μm to several tens of μΐΏ in the vertical direction of the plan view of the workpiece. Moreover, the surface is opened/cleaved as described below. The upper surface is subjected to strong impact or stress to cause sliding of the crystal surface, thereby causing undulation in the depth direction. Further, as shown in FIG. 1(e), the laser beam is scanned along the predetermined line ', and the irradiated regions RE1, RE2, re3, and the irradiation unit pulse light are sequentially arranged to sequentially form a split/split. Open face C2, Ο. In this aspect, the split/cleavage surface is continuously formed, which is called the split/cleavage processing of the first processing file. In other words, in the first processing pattern, the region to be irradiated which is discretely formed along the planned line L and the split/split formed between the regions to be irradiated are processed along the predetermined line. The point of division of the object. After the starting point of the division is formed, the division is performed using a specific jig or device, whereby the workpiece can be divided by roughly processing the pre-twist line B along a τ # # # τ /〇. Furthermore, in order to realize such splitting/cracking processing, it is necessary to irradiate a laser beam having a short pulse width and a short pulse. Specifically, a laser beam with a pulse width (four) - below must be used. For example, a laser beam having a pulse width of i psee 〜 5Q (four) left I54922.doc 14 201204500 is preferably used. On the other hand, the irradiation interval of the unit pulse light (the center interval of the irradiated dots) is specified to be in the range of 4 μm to 50 μm. If the irradiation pitch is larger than the range, the formation of the weak strength portion in the easy direction of the splitting/cracking may not follow the formation of the split/cleavage surface, and thus the formation of the split/cleavage plane as described above is surely formed. From the point of view of the starting point of division, it is not good. Further, in terms of scanning speed, processing efficiency, and product quality, the larger the irradiation pitch, the better. However, in order to form the split/cleavage surface more reliably, it is preferably specified in the range of 4 μη to 30 μπι, more preferably 4 μιη~15 μηι or so. When the repetition frequency of the laser beam is R (kHz), the unit pulse light is emitted from the laser source every time / claw "勹". When the laser beam is relative to the workpiece, the relative velocity is V (mm/Sec) When moving, the irradiation pitch Δ (4) is determined by Δ-V/R. Therefore, the scanning speed v of the laser beam and the repetition frequency are defined by Δ being about several μη. For example, the scanning speed is preferably It is about 5〇mm/sec~3000mm/sec, and the repetition frequency is ~2〇〇, especially about 10 kHz~200 kHz. The specific value of silk is only considering the material or absorption rate of the workpiece, thermal conductivity, The laser beam is preferably irradiated with a beam diameter of about i μπι to 1G (four). At this time, the peak power density of the laser beam is about 〇iTw/em2~10 TW. /cm2. In addition, the irradiation energy (pulse energy) of the w-beam is appropriately defined within the range of "〇5". Fig. 2 is a view showing a split-time microscope image by splitting/cleaving of light on the surface of the workpiece at the first processing pattern point. Specifically, 154922.doc •15-201204500 The sapphire C-plane substrate is a workpiece, and the &amp;1 axis direction is set to the extending direction of the planned line L on the c-plane, and is formed at intervals of 7 μm. The result of processing the illuminated spot. The results shown in Fig. 2 indicate that the actual workpiece is processed by the above mechanism. Further, Fig. 3 is an SEM (Scanning Electron Microscope) image of the surface (c surface) to the cross section of the sapphire c-plane substrate "> the sapphire c-plane substrate "> the division start point is formed by the addition of the second processing pattern. Furthermore, in Fig. 3, a broken line is shown: the boundary portion between the surface and the cross section. The elongated triangular shape or needle-like region having a length from the surface of the workpiece to the inside, which is substantially equally spaced from the surface of the workpiece, as viewed in Fig. 3, is observed by unit pulse light. a region in which a phenomenon such as direct deterioration or a phenomenon such as scattering is removed by irradiation (hereinafter referred to as a direct metamorphic region), and a rib-like portion having a longitudinal direction in a left-right direction of the paper surface observed in a submicron interval is observed between the direct metamorphic regions. The area in which the paper surface is continuous in the vertical direction is a split/cleavage surface. The direct metamorphic region and the lower surface of the split surface are the split surfaces formed by the division. The area in which the split/clear surface is formed is not affected by the thunder. In the region where the beam is irradiated, the processing of the i-th processing pattern is performed, and the directly deformed region which is discretely formed becomes a processing mark. The size of the processed surface of the direct metamorphic region is only about several hundred (10) to 1 μm. By performing the addition of the i-th processing pattern, it is possible to form a division starting point which can appropriately suppress the formation of the processing marks as compared with the prior art. Furthermore, the rib-like portion observed in the SEM image is actually formed by cleavage/cleavage on the surface of 154922.doc -16 - 201204500 (the slight convexity of the height difference of Μ μιη~i μιη is such as sapphire Hard and brittle inorganic compounds are used as objects: When the concave-opening process is performed, the workpiece is subjected to 劈 shock or stress due to the irradiation of the unit pulsed light, and the material surface _, (9) acts as a strong heart, The surface of the mouth is formed by sliding. Although such fine concavities and convexities exist, the judgment table is substantially orthogonal according to Fig. 3. Therefore, if the fine concavities and convexities are located at plus == wave = =, it can be said that the first processing can be performed. The cutting edge of the starting point of the pattern forming division divides the workpiece, thereby dividing the surface to be processed substantially vertically. The surface of the surface is further formed by the positive formation of the fine unevenness. The processing of the case can also be paid to some extent by the processing of the second processing pattern described below. The effect of the processing of the second processing pattern is as follows: "Using the government" &lt;2nd processing pattern> ^Adding the pattern to the axis direction, a2 In the direction of the axis direction axis - , ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The two split/split open directions are equivalent and the direction is equivalent (the direction of the symmetry axis of the two split/clear easy directions). The processing pattern when the direction of the predetermined line is processed. Fortunately, a pattern diagram of the processing aspect of the Λη T -13⁄4 round tea. The case where the W-axis direction is orthogonal to the planned line L is illustrated in Fig. 4. Fig. 4(a) shows the _direction '32-axis direction at this time, a3 The azimuth relationship between the axial direction and the planned processing line L. The unit pulse light of the third pulse of the beam of the light beam of Fig. 4 (8) is irradiated to the state of the irradiated region RE11 at the end of the 154922.doc •17·201204500 predetermined line L. The second processing pattern also forms a weak intensity portion in the same manner as the first processing pattern by irradiating the unit pulse light of the ultrashort pulse. In Fig. 4(b), the _a2 direction and the +a3 direction which are close to the processing direction line L in the weak strength portion formed in the easy direction of each of the above-described splitting/cracking are schematically indicated by the dotted arrow. Strength portions Wlla, W12a. Further, as shown in FIG. 4(c), when the unit pulse light of the second pulse of the laser beam is irradiated, the irradiated area RE 12 is formed on the planned line L at a position at a certain distance from the irradiated area re11. Then, similarly to the first pulse, the second pulse also forms a weak intensity portion in the easy direction of splitting/cleaving. For example, a weak intensity portion wilb is formed in the -a3 direction, a weak intensity portion W12b is formed in the +a2 direction, a weak intensity portion w11c is formed in the +a3 direction, and a weak intensity portion W12c is formed in the -a2 direction. In this case, similarly to the first processing pattern, the weak-strength portions W11a and W12a formed by the irradiation of the unit pulse light of the first pulse exist in the extending directions of the weak-strength portions W11b and W12b, respectively. The 2 pulse of unit pulse light' then the impact or stress generated at this time will propagate in the easy direction of the splitting/cracking and the weak intensity part existing before. That is, as shown in Fig. 4(d), split/cleavage surfaces C11a and C11b are formed. Further, in this case, the split/cleavage surfaces Cl1a and Cl1b may be formed to have a depth of about several ηι to several tens of μηη in the vertical direction of the sheet surface of the workpiece. Next, as shown in FIG. 4(e), the laser beam is scanned along the planned line L, and the irradiated areas RE11, RE12, RE13, RE14, ... are sequentially irradiated with unit pulse light, and thus the impact or stress is generated. Along the processing line [and according to 154922.doc •18·201204500 order, the paper surface is formed with a straight line of open/cleaved open surfaces Clla and Cllb, Cl2a and C12b, C13a and Cl3b, Cl4a and Cl4b..·. Thus, the state in which the split/cleavage plane is symmetrical with respect to the planned line 1 is achieved. In the second processing pattern, the plurality of irradiated regions that are discretely present, and the split/cleavage surfaces that exist in the zigzag shape as a whole are divided into the workpieces along the planned line L. starting point. Fig. 5 is an optical microscope image of the surface of the workpiece on which the starting point is divided by the splitting/cracking process of the 帛2 processing pattern. Specifically, the processing is performed by forming the substrate as the workpiece "and on the c-plane, the direction a orthogonal to the axis direction is the direction in which the planned line B is extended, and the irradiated dots are discretely formed at intervals of 7 (four). According to Fig. 5, the actual workpiece is also in the same manner as the nucleus diagram of Fig. 4(e), and the surface-discriminate (z-shaped) split/cleaved surface is confirmed. This result indicates that the actual processed material is processed by the above mechanism. Further, Fig. 6 is an SEM image of a cross section of the sapphire C-plane substrate which is divided by the processing of the second processing pattern along the division starting point, from the surface & surface to the cross section. Further, the boundary portion between the surface and the cross section is indicated by a broken line in Fig. 6. According to Fig. 6, it is confirmed that the cross section of the workpiece after the division is within a range of 1 μm from the surface, and the cross section of the workpiece has irregularities corresponding to the ore-like arrangement schematically shown in Fig. 4 . The cleavage/cleavage surface of the embossing is formed. Further, the distance between the concavities and convexities in Fig. 6 is about 5 μηη. Similarly to the processing of the 丨 machining pattern, the cleavage/cleavage surface is not flat, but The knowledge of the unit pulse light causes the specific crystal plane to slip, and the unevenness of the submicron pitch is generated along with the 154922.doc •19-201204500. Moreover, the position corresponding to the convex portion of the concave and convex is from the surface portion to the depth. The direction extending is a section of the direct metamorphic region, and the shape is not uniform compared with the direct metamorphic region formed by the processing of the second processing pattern shown in Fig. 3. Moreover, the direct metamorphic region and the split/cleavage surface The lower part is a divided surface formed by the division. The second processing pattern is the same as the second processing pattern, and only the directly deformed direct metamorphic region becomes a processing mark. Moreover, the direct metamorphic region The size of the machined surface is only about several hundred nm to 2 μΓη. That is, when the second process pattern is processed, the formation of the process marks can be formed more preferably than the previous division start point. In the case of the second process pattern processing In addition to the unevenness of the sub-micron pitch formed on the split/cleavage surface, the adjacent split/cleavage surfaces are formed with irregularities at a distance of several μηι. The aspect of the profile having such a concave-convex shape is formed by sapphire In the case of a substrate having a light-brittle and optically transparent material, it is effective to form a workpiece in which a light-emitting element structure such as an LED structure is formed by a wafer (divided sheet). In the case of a light-emitting element, a laser is used. The portion of the processing mark formed on the substrate absorbs the light generated inside the light-emitting element, so that the light-pumping efficiency of the element is lowered, but the processing of the second processing pattern is intentionally formed on the substrate processing section. In the case of the unevenness shown in Fig. 6, the total reflectance of the corresponding position is lowered. 'The light-emitting element achieves a higher light-pig-out efficiency. &lt;3rd processing drawing Case> The third processing pattern is the same as the second processing pattern in that any of the laser beam of the ultra-short pulse I54922.doc •20·201204500 and the direction of the a-axis, the a2 axis, and the a3 axis are used. It is perpendicular to the addition of the n-line (the direction in which the two sides are different from each other and the equivalent direction becomes the direction in which the line is processed), and the difference from the second pattern is the irradiation of the laser beam. Fig. 7 is a schematic view showing a processing state of the third processing pattern. The case of the a-axis direction and the planned line is illustrated in Fig. 7. Fig. 7(4) shows the a-axis direction, the a2-axis direction, the a3-axis direction and the processing at this time. In the second processing pattern, the laser beam is extended along the processing line L, that is, the U-axis direction and the a3 axis, according to the same orientation relationship as shown in FIG. 7(a). The direction of the direction of the direction (as opposed to. The axial direction is scanned linearly with the direction equivalent to the axial direction. In the third processing pattern, instead of this, as shown in FIG. 7(b), each of the irradiated regions is zigzag in an alternating direction of two open/clearing directions with respect to the predetermined line L of the nip processing. (2 words) is formed by irradiating the unit pulse light forming each of the irradiated regions. In the case of Fig. 7, the parent region forms the irradiated regions re] 1, RE22, RE23, RE24, RE25, ... in the _a2 direction and the +a3 direction. When the unit pulse light is irradiated in this manner, similarly to the second and second processing patterns, the split/clear surface is formed between the irradiated regions in accordance with the irradiation of the respective unit pulsed light. In the case shown in FIG. 7(b), by forming the irradiated regions RE21, RE22, RE23, RE24, RE25, ... in order, the split/cleavage surfaces C21, C22, C23, C24 are sequentially formed. . . . In the third processing pattern, the plurality of irradiated regions which are arranged in a zigzag manner on the basis of the planned planned line, and the split/clear plane formed between each of the irradiated regions become the entire The machining planned line L is divided by the starting point of the 154922.doc -21 - 201204500 workpiece. Further, when the actual division is performed along the corresponding division starting point, in the same manner as the second processing pattern, the distance between the cross-section of the workpiece after the division and the surface is 丨〇, and the number of μηι intervals caused by the split/cleavage surface is formed. Bump. Further, in the respective split/cleavage surfaces, as in the case of the second and second processing patterns, the specific crystal plane is slid by the irradiation of the unit pulse light, and the unevenness of the submicron pitch is generated therewith. Further, the formation form of the direct metamorphic region is also the same as that of the second processed pattern. In other words, in the third processing pattern, the formation of the processing marks can be suppressed to the same level as the second processing pattern. Therefore, in the case of processing of the third processed pattern, similarly to the processing of the second pattern, in addition to the unevenness of the submicron pitch formed on the split/cleavage surface, the split/cleavage surfaces are mutually When the light-emitting element is used as the object of the light-emitting element, the light-emitting element is improved as described above.

On the other hand, the arrangement position of the third processing map of the Mb', the broken, the, and the shot area is along the midpoint of the planned line along the completion line L.

The common feature of the processing pattern may be that at least two of the irradiated regions are formed adjacent to each other in the easy opening/split direction of the workpiece 154922.doc -22-201204500. Therefore, in other words, the third processing pattern can also be considered to periodically change the direction of the scanning laser beam and perform the processing of the first processing pattern. In addition, in the case of the i-th and second processing patterns, the illuminated area is located on a straight line, so that the source of the laser beam is moved along the line by adding the H line and the object position is specified for each material. When the unit pulsed light is irradiated to form the irradiated area, the formation form is most effective. However, in the case of the third processing pattern, the irradiated area is not located on a straight line but is formed into a mineral tooth shape (2 words). Therefore, it is possible to use not only the method of moving the source of the laser beam in a substantially (four) shape (2 words), but also various methods to form the illuminated region. Further, in the present embodiment, the movement of the emission source refers to the relative movement between the workpiece and the emission source, and includes not only the case where the workpiece is fixed but also the movement of the source, and the source is fixed and the object is moved. The upper stage mounts the stage on which the workpiece is moved. For example, 'the output source is moved at a constant speed in parallel with the stage and the planned line, and the direction of the field beam is perpendicular to the planned line. The periodic change in the plane, etc., can also form the irradiated area in the wrong tooth-like arrangement relationship as described above. Or 'the plurality of exit sources are moved in parallel at equal speeds, and the respective exit sources are made The irradiation timing of the unit pulse light is periodically changed, whereby the irradiated region can be formed in a manner to satisfy the zigzag arrangement relationship as described above. Fig. 8 shows the planned planned line and the irradiated area in the above two cases. Shape: the relationship between the predetermined positions. In any case, as shown in Figure 8, the area to be illuminated - then, RE22, coffee, and the formation of the predetermined position (9), I54922.doc -23-201204500 P22, P23, P24, P25 Formed alternately with the line to be processed [parallel lines Let, ίβ, the formation of the irradiated areas at predetermined positions p21, p23, P25.&quot; along the line La, and the formation of predetermined positions P22, P24 along the line The formation of the illuminated area of ' can also be seen as a simultaneous juxtaposition. Further, when the output source is zigzag-shaped (Z-shaped), the source of the laser beam is moved directly, or the stage on which the workpiece is placed is moved to scan the laser beam, and the source is emitted. Or the movement of the stage is two simultaneous operations of the two axes. For this purpose, only the operation source or the stage is moved in parallel with the planned line. _, the latter is more suitable in terms of achieving high-speed movement of the exit source, that is, processing efficiency. As shown in each of the above processing patterns, the open-cut processing performed in the present embodiment uses discrete illumination of unit pulse light as a mechanism for mainly imparting a shock or stress to the continuous opening/spliting of the object to be added. Use 4 machining patterns. The deterioration of the workpiece in the irradiated area (that is, the formation or scattering of the processing mark is locally generated only by the accompanying object. The splitting/cracking process of the present spin form having such characteristics is performed by the unit pulse light The irradiation areas are overlapped and connected: or the deformation is intermittently produced. The mechanism of the previous processing methods of processing by smelting and evaporation is substantially different. And 'the moment of applying strong impact or stress to each irradiated area Yes, it is possible to scan the laser beam at high speed and illuminate it. Specifically, it can achieve the maximum south speed scanning or high speed machining. The processing speed of the previous processing method is about 200 mm/sec. g月5—The processing method achieved in the form is the father's second difference. Of course, this implementation method significantly improves the productivity of the I54922.doc •24· 201204500 compared with the previous processing method. Furthermore, the embodiment is opened. / split P bow, "A, shoulder / split open processed in the same as the above processing pattern of the crystal orientation of the workpiece (opening / agro-valley direction of orientation, when the predetermined line of the spot meets a specific relationship, especially right 40,000) /, processing * s J has a political, but the object of application is not limited to this, in principle, it can also be applied to the situation of the two /, the relationship between the two, or the case that the work is polycrystalline. In other cases, ^ the direction of splitting/cracking is not necessarily g', the line of the job is scheduled, and the π is the target. The non-shoulder is fixed, so the starting point of the split can produce irregular bumps, by appropriately setting the suede... The interval between the regions, or the irradiation condition of the laser beam headed by the pulse width, ^ # ^ ^ ^, the processing of the concave and convex is controlled in the processing of the poor processing of the material processing. [Last processing device <Summary> Next, it will be described that each of the above-described apparatuses can be realized. The laser beam of the processing of the pattern is shown in Fig. 9 as a schematic diagram showing the configuration of the field processing apparatus 50 of the present drawing. 〇 Λ , , , , , , , , , , , , , , , , , , , 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先Various actions (observation ^ alignment action, moving part 50 one action寻) The controller 1. The laser beam irradiation &, the preparation of the laser source SL and the optical system of the Λ τ k in ', the yuan ύ and the workpiece 7 placed on the workpiece 1 〇 irradiation The beam of the thunder beam, the shield. &amp; the first part of the beam, equivalent to the above laser light Κ ίίί source. Observing part 5 〇 for the surface or bedding, Ding from..., shooting the laser beam side (call it from # ϋ丄面) directly observes the JL surface of the object to be protected 10, and observes the portion of the object, which is the back surface or the mounting surface, through the back surface of the load and the sigma workpiece 10. I54922. Doc •25· 201204500 II. 7 is movable in the horizontal direction between the laser beam illuminating portion 5A and the portion 50B by the moving mechanism 7m. The moving mechanism &amp; actuates the stage 7 in the horizontal plane in the χ2 axis direction by the action of a driving mechanism (not shown). Thereby, the "laser beam in the laser beam irradiation portion 50" is realized: the movement of the shot position, the movement of the observation position in the observation portion 5, and the load between the laser beam irradiation portion 50A and the observation portion lake. The movement of the stage 7 or the like. Further, the movement (7) rotation of the movement mechanism 7m and f in the horizontal plane with the specific rotation axis as the center of the movement may be performed independently of the horizontal drive. In the case of 50, the front view and the back view can be appropriately switched. Thereby, the material or state corresponding to the workpiece ι can be flexibly and quickly observed. The stage 7 is formed of a transparent member such as quartz. A suction pipe (not shown) that is an intake passage for adsorbing and fixing the workpiece H) is provided inside. The suction pipe is formed by, for example, machining a specific position of the stage 7 by machining. In the state in which the workpiece 10 is placed on the stage 7, the suction pipe is suctioned by a suction mechanism 11 such as a suction pump, and is loaded on the stage 7 of the suction pipe. a suction hole provided at the front end of the setting side is given By pressing, the workpiece 10 (and the fixing sheet 4) is fixed to the stage 7. Further, in Fig. 9, the workpiece 1 to be processed is attached to the fixed sheet 4, Preferably, a fixing ring (not shown) for fixing the fixing sheet * is disposed on the outer edge portion of the fixing sheet 4. Further, although the illustration is omitted in Fig. 9, the laser beam irradiation portion 5a is loaded in the object. There is no cooling mechanism 6〇 at the lower position of the stage 7 (see Fig. 12). The laser processing apparatus 50 of the embodiment 154922.doc •26·201204500 is characterized in that the cooling mechanism 60 is provided. The detailed description of the cooling mechanism 60 will be <Illumination system and observation system> The observation unit 50B is configured to overlap the workpiece 1 placed on the stage 7 and to superimpose the projection illumination from the upper surface of the stage 7 to the illumination source s The light L1 and the self-oblique illumination light source s2 illuminate the oblique light to transmit the illumination light [2, and the front side of the stage 7 is viewed from the front side of the stage 7 and the lower side of the stage 7 is used by the back side observation mechanism 丨6. Observing the back. Specific and Lu, The epi-illumination light L emitted from the epi-illumination light source si is reflected by the half mirror 9 provided in the lens barrel, and is irradiated onto the workpiece 1〇. The observation unit 50B is provided with a front observation mechanism 6, and the front surface is provided. The observation mechanism 6 includes a CCD camera & disposed above the half mirror 9 (above the lens barrel) and a monitoring secret connected to the CCD camera 6a, and can immediately observe the workpiece under the condition of irradiating the epi-illumination light u. Further, in the observation unit 50B, it is preferable to include a back surface observation mechanism 16 below the stage 7, and the back surface observation mechanism 16 includes a CCD provided below the half mirror (below the lens barrel) The camera 丨 6a and the monitor 16b connected to the CCD camera 16 & Further, the monitor 16b and the monitor 6b provided in the front observation mechanism 6 may be used in common. Further, the coaxial illumination light L3 emitted from the coaxial illumination light source s3 provided under the stage 7 is reflected by the semi-reflection_reflection provided in the lens barrel (not shown), and is condensed by the collecting lens 18 to be transmitted. The stage 7 is irradiated onto the workpiece 1 Q. More preferably, the lower stage g of the stage 7 is located at the beginning D, and the oblique illumination source S4 is provided below, and the oblique illumination light L4 can be transmitted through the carrier A 7 and the B3 6+ & Workpiece 10. The equivalent 154922.doc •21·201204500 The axis illumination source S3 and the oblique illumination source S4 are preferably opaque metal layers or the like on the surface side of the workpiece 1 且, and the observation of the surface side is difficult due to the reflection of the metal layer. In the case of the case, the object to be processed is observed from the back side. &lt;Laser light source&gt; The wavelength of the laser light source SL is 5 〇〇 nm to 16 〇〇 nm. Further, in order to realize the processing of the above-described processing pattern, the pulse width of the laser beam LB must be about i psec to 5 〇 psec. Further, it is preferable that the repetition frequency scale is about 1 kHz to 2 kHz, and the irradiation energy (pulse energy) of the laser beam is 〇"μ; Furthermore, the polarization state of the laser beam 1B emitted from the laser light source SL may be circularly polarized or linearly polarized. In the case of linear polarization, in view of the bending and energy absorption rate of the processed cross section in the crystalline material to be processed, it is preferable that the polarization direction is substantially parallel to the scanning direction, for example, the angle formed by the two is ± 1. Within. &lt;Optical System&gt; The optical system 5 sets a portion where the laser beam is irradiated onto the optical path of the workpiece 1〇. The laser beam is irradiated to a specific irradiation position of the workpiece (predetermined position at which the irradiated region is formed) in accordance with the optical path set by the optical system 5. Fig. 1 is a schematic view showing the configuration of an optical system 5. The optical system 5 mainly includes a beam amplifier 51 and an objective lens system 52. Further, in the optical system 5, in order to change the optical path direction of the laser beam LB, an appropriate number of lenses 5ae may be provided at appropriate positions. Fig. 1A illustrates the case where two lenses are provided. Further, in the case where the emitted light is linearly polarized, the optical system 5 is preferably provided with a reducer 5b. The attenuator 5b is disposed at an appropriate position on the optical path of the laser beam LB to adjust the intensity of the exiting laser beam (3). 154922.doc -28·201204500 In the optical system 5 exemplified in the figure, the laser light emitted from the laser light source SL is irradiated to the workpiece in a state where the optical path is fixed during the processing. In addition to the above, a configuration may be adopted in which a plurality of optical paths of the laser beam LB when the laser beam emitted from the laser light source SL is irradiated onto the workpiece H) are actually or virtually set, and The optical path setting means 5e (FIG. 11) can be used to switch the optical path when each unit pulse light of the laser beam LB is irradiated onto the workpiece in the set plurality of optical paths. In the latter case, it is possible to realize a state in which a plurality of parts on the upper surface of the workpiece are simultaneously scanned in parallel or in a state of being simultaneously scanned in parallel. In other words, this multiplexes the optical path of the laser beam LB. Further, in Fig. 9, the case where three portions are described by three laser beams lb 〇, lbi lb^ is illustrated, but the optical path of the optical system 5 is multiplexed, and is not limited thereto. A specific configuration example of the optical system 5 will be described later. <Controller> The controller 1 controls the operation of each of the above-described units, and further includes a control unit 2 that realizes processing of the workpiece 1〇 in various aspects described below, and a storage unit 3′ that stores and controls the laser processing apparatus The program of the 5 动作 action and various materials referred to during processing. The control unit 2 is realized by a general-purpose computer such as a personal computer or a microcomputer, and the program 3p stored in the storage unit 3 is read into the computer and bound, and various components are realized as functional components of the control unit 2. . Specifically, the control unit 2 mainly includes a drive control unit 2 that controls the driving of the stage 7 of the moving mechanism 7m and the focusing operation of the collecting lens unit 8, and the operation of various driving portions related to the processing. The imaging control unit 22, 154922.doc -29·201204500 controls the imaging of the CCD cameras 6a and 16a, and the illumination control unit 23 controls the illumination of the laser beam LB of the laser light source SL and the optical path setting pattern of the optical system 5. The adsorption control unit 24 controls the suction mechanism 吸附 to adsorb and fix the workpiece 1 to the stage 7; and the processing unit 25 according to the supplied processing position data D1 (described below) and processing The mode setting data D2 (described below) is executed to process the machining target position. The memory unit 3 is realized by using R〇M or a memory medium such as a RAM or a hard disk. Further, the memory unit 3 can be realized by the components constituting the computer of the control unit 2. The situation of the hard disk can also be set outside the computer. The memory unit 3 stores a processing position data m which is provided from the outside and describes the position of the planned line to be processed. Moreover, the memory unit 3 pre-stores the guard mode setting rule, wherein the conditions related to the parameters of the laser beam or the optical path of the optical system 5, the setting conditions or the driving conditions of the stage 7 are described for each processing mode. (or its configurable range). Further, the operator can provide the GUI for the various types of input instructions to the laser processing device 5, which are used in the preferred controller, and the processing menu is provided by (10). . The operator inputs the following machining mode = according to the 加工 machining processing menu. &lt;Plating processing conditions &lt;Alignment operation&gt; In the laser processing apparatus 50Φ, the workpiece is finely adjusted. ==; _ _ position alignment action. Alignment J54922.doc 201204500 is performed in order to make the χ-coordinate axis defined by the x-object 1G and the coordinate axis of the stage 7. In the case of performing the processing of the above-described processing pattern, it is important that the alignment direction of the workpiece, the planned line of processing, and the scanning direction of the laser beam satisfy the specific relationship found in each processing pattern. The alignment action can be performed using well-known techniques as long as it corresponds to the processing pattern in an appropriate manner. For example, when a plurality of element wafers produced by one mother board are cut out, etc., if a repeating pattern is formed on the surface of the workpiece 1 ,, it is appropriate to use pattern matching or the like. Align the action. In this case, the imaging circle image of the plurality of alignment marks formed on the workpiece 10 is simply obtained by the ccd camera or the W, and the processing relationship is based on the relative relationship between the imaging positions of the captured images. The amount of alignment "the drive control unit 21 moves the stage 7 by the moving mechanism 7m in accordance with the amount of alignment, thereby achieving alignment. By performing this alignment operation, the processing position of the processing can be accurately determined. When the alignment operation is completed, the stage 7 on which the workpiece 10 is placed is moved to the laser beam irradiation unit 50A, and then the processing for irradiating the laser beam LB is performed. Further, the movement of the stage 7 from the observation portion 5〇b to the laser beam irradiating portion 50A is such that the predetermined machining position and the actual machining position are not deviated in order to ensure the alignment operation. <Summary of Processing Process> Next, the processing of the laser processing apparatus 5 of the present embodiment will be described. The lightning light source SL is emitted by the laser light source LB, and is combined with the movement of the stage 7 I54922.doc -31 · 201204500 on which the workpiece H) is placed and fixed. Thereby, the laser beam that has passed through the optical system 5 is relatively scanned with respect to the workpiece 1 ,, and the workpiece 1 is processed. The laser processing apparatus 50 is characterized in that the mode (processing mode) of the processing of the (relatively) scanning laser beam LB can be selected from the basic mode and the multi mode t. These processing modes are set corresponding to the optical path setting aspect of the optical system 5 described above. The basic mode is a mode that fixedly defines the optical path of the laser beam emitted from the laser light source SL. In the basic mode, the laser beam LB is always moved by a certain optical path by the stage 7 on which the workpiece 10 is placed, thereby realizing that the laser beam scans the workpiece i in one direction. Sample processing. In the case of the optical system 5 illustrated in Fig. 10, only the processing in this basic mode can be performed. The basic mode is suitable for the addition of the first and second king pattern described above. That is, in the case of the workpiece to be processed, which is set to be easy to open/split, the easy opening direction and the moving direction of the stage are aligned. The object lQ is then subjected to the processing in the basic mode to perform the processing of the first processing pattern. On the other hand, the processing planned line L is set so as to be perpendicular to the easy opening/spliting direction of the object 10, and the direction of the opening/spliting easy direction and the movement of the stage 7 are orthogonal to each other. The quasi-machined object 10 is then subjected to the force in the basic mode: the second processing pattern is processed by the work. In addition, the original 'supplied&' can be applied by appropriately changing the moving direction of the stage 7. 3 processing of the processing pattern - the multi-mode is a mode in which the optical path of the laser beam LB is virtually multiplexed by 154922.doc -32·201204500 to set a plurality of optical paths. The mode is as follows, for example, Along the line La parallel to the processing planned line L, the coffee person and the pre-twist line L themselves 'physically or virtually scan a plurality of laser lights' thereby achieving a scanning thunder with a repeating process of processing the planned line L The same processing is performed in the illuminating booth. Further, the plurality of laser beams are virtually scanned, and the optical ray is irradiated with the optical path in the same manner as the basic mode, and the optical path is changed in time. When the light path illuminates the laser beam The multi-mode is suitable for the processing of the third processing pattern. That is, in the same manner as in the case of the 2 processing pattern, the processing target line 1 is set to be opened, and the workpiece 1 perpendicular to the easy direction is opened. In other words, the splitting is easy to align the workpiece (7) so as to be orthogonal to the moving direction of the stage 7, and then the processing of the third processing pattern is performed by processing in the multiple mode. Preferably, the processing mode is performed by the controller 1 based on the processing processing unit available to the operator, for example, by the controller 1 to obtain the machining position data and the self-processing. The mold setting data D2 acquires a condition corresponding to the selected processing pattern, and in order to perform the operation corresponding to the corresponding condition, the drive control unit 21, the illumination control unit 23, and the others control the operations of the corresponding units. For example, The illumination control unit 23 of the controller realizes the wavelength, the output, the repetition frequency of the pulse, the pulse width, and the like of the laser light LB emitted from the laser light source. The control unit 23 issues a specific setting signal according to the processing mode setting data (1), and the irradiation control unit sets the irradiation condition of the laser beam 1^8 according to the setting signal. 154922.doc •33- 201204500 When the mode is processed, the illumination control unit 23 synchronizes the optical path switching timing of the optical path setting means 5c with the emission timing of the unit pulse light from the laser light source. Thereby, the optical path is formed with respect to each of the irradiated regions. The setting mechanism 5 irradiates the unit pulse light with the optical path corresponding to the predetermined position among the plurality of optical paths that are set. Further, in the laser processing apparatus 50, the processing position may be intentionally The surface of the workpiece 1 deviates from the defocused state, and the laser beam LB is irradiated. This can be achieved, for example, by adjusting the relative distance between the stage 7 and the optical system 5. &lt;Configuration Example of Optical Path Setting Mechanism and Operation thereof&gt; Next, the specific configuration of the optical path setting unit 5c and an operation example thereof will be mainly described for the operation of the multi-mode. In the following description, when the processing is performed, the stage 7 on which the workpiece 10 is placed is moved in the movement direction D that coincides with the direction in which the planned line is extended, and processed. Further, in the operation of the multiple mode, the laser beam LB 照射 irradiated when the irradiated region RE is formed on the planned line L is formed, and the irradiated region RE is formed on the straight line La parallel to the planned line 1 The laser beam LB2 is irradiated when the irradiated region RE is formed on the straight line Lp parallel to the same planned line L and positioned at a position symmetrical with respect to the planned line. Further, the processing of the third processing pattern in the multi-mode is realized by sequentially or simultaneously forming a plurality of irradiated regions in a direction in which the splitting/cleaving is easy. 154922.doc •34· 201204500 The diagram shows a schematic diagram of the configuration of the optical path setting mechanism 5c. The optical path setting mechanism 5c is provided as one of the constituent elements of the optical system 5. The optical path setting mechanism 5C includes a plurality of half mirrors 53, a lens 54, and an optical path selecting means 55. The purpose of providing the half mirror 53 and the lens 54 is to cause the optical path of the laser beam LB emitted from the laser source to branch in the in-plane direction perpendicular to the moving direction 载 of the stage 7, thereby forming a plurality of optical paths (Ray The light path of the beam LB0, LB1, LB2). Further, the number of the half mirrors 53 depends on the number of optical paths. In Fig. 11, two half mirrors 53 are provided in order to obtain three optical paths. By possession. The semi-reflecting mirror 53 and the lens 54 project the laser beam LB and move the stage 7, thereby realizing a state in which a plurality of laser beams scan the workpiece. The purpose of the optical path selecting means 55 is to control the timing at which the laser beam of the workpiece 10 of the plurality of optical paths is emitted. More specifically, the optical path selecting means 55 is provided with an optical switch SW in the middle of the optical path of each of the laser beams branched by the half mirror 53 and the lens 54. The optical switch SW is constituted by, for example, an AOM (Audio Optical Modulator) or an EOM (Electro-Optical Device), and has an incident laser beam when the 〇N state is passed, and the incident laser beam is blocked when the FF state is Attenuation (non-passing state) function. Thereby, the optical path selecting means 55 irradiates only the laser beam of 8% of the optical switch in the ON state to the workpiece 1?. The operation in the multiple mode of the laser processing apparatus 5 having the light path setting mechanism having such a configuration is realized by the irradiation control unit 23 according to the emission timing of the unit pulse light of the laser beam LB2 in accordance with the repetition frequency R. In the manner that the optical switches 3 on the optical paths of the laser beams lbo, lb1, and LB2 are sequentially and periodically turned ON, the optical switches SWi on/off are controlled. By the control, each of the laser beams LB〇 LB1, LB2 154922.doc -35· 201204500 Only when the timing at which the irradiated region is formed is reached, each of the laser beams LB〇, LB1, and LB2 is irradiated onto the workpiece by the optical path selecting unit 55. In other words, the optical path of the laser beam irradiated to the workpiece 1 is actually provided with a plurality of 'the scanning timings of the unit pulse lights of the respective laser beams are different and simultaneously scanned in parallel, thereby performing the multi-mode The action. Furthermore, the operation of the basic mode can also be realized by, for example, causing only the optical switch SW on the optical path of any of the laser beams LBG, LB1, LB2 to be in the ON state and emitting the laser beam LB. The stage 7 is moved. &lt;Efficiency of Cooling and Cleaving/Cleaning of Workpieces&gt; The above-described splitting/cracking process utilizes an impact or stress generated by irradiation of unit pulsed light to cause the workpiece to be cleaved/cracked. technique. Therefore, each unit of pulsed light can form a split/clearing surface with less energy consumption. Even if the energy supplied is the same, the splitting/cracking can be made to reach the workpiece at a deeper point before the cutting point reaches the workpiece. The deeper portion allows the split/cleavage surface to be formed more effectively. According to the above point of view, in the present embodiment, the pulsed laser beam is irradiated with the tensile stress applied to the surface to be processed in advance, whereby a more effective splitting/cracking process can be realized. Specifically, a temperature difference is generated between the mounting surface and the surface to be processed by cooling the mounting surface of the workpiece. When this temperature difference occurs, the mounting surface side on the workpiece becomes more contracted than the surface to be processed, and tensile stress acts on the surface to be processed. If the pulsed laser beam is irradiated in this state, the part of the tensile stress can reduce the energy consumed in forming the open/clear surface, and the progress of the split/cleavage surface becomes 154922.doc -36 201204500 Easy. Further, in general, if the temperature is lowered, the damage of the solid is lowered. Moreover, the lower the damage property value, the easier the split/cleavage surface is formed. Therefore, in the above-described aspect, the state in which the workpiece is placed closer to the mounting surface side by the cold portion mounting surface is lower, and the progress of the split/cleavage surface is easier. The practice of starting the 'cooling of the placed surface of the workpiece helps to increase the efficiency of the splitting/cracking process. In other words, in the present embodiment, in the state in which the mounting surface of the workpiece is cooled, and the five temples are subjected to the application of the tensile stress applied to the surface and the destruction of the mounting surface side, The split/split is applied, so that the split/cleavage surface can be formed more effectively. &lt;Cooling Mechanism&gt; Next, a cooling mechanism 6A for cooling the mounting surface side of the workpiece in the laser processing apparatus 5A will be described. Fig. 12 is a view showing the configuration and arrangement position of the cooling mechanism (9). Further, Fig. 12 exemplifies a case where the workpiece 1 is composed of the gemstone substrate 1〇1 and the (four) structure 102 formed of the m-group nitride or the like. - as shown in Fig. 12 [cooling machine (4) is provided as a cooling member, the member 61 "heat dissipating portion 62" which includes the branch portion m of the supporting member 61 and the continuous portion 62a. The fin portion 62b' and the fan portion 63' having a plurality of fins are disposed adjacent to the fin portion (four), and the fin portion 62b is blown by driving a fan provided inside. The cooling mechanism 60 is disposed in such a manner that, at least when the stage is used for the laser beam irradiation unit 50A, the material 61 is close to the stage 7 and the workpiece 10 is placed 154922.doc -37·201204500. The upper surface 7a is the back surface 7b on the opposite side. In this arrangement state, when the Peltier element 61 is energized by an energization means (not shown), the surface 61a generates heat absorption. The stage 7 is cooled by the heat absorption, and the mounting surface 1a of the workpiece 10 placed thereon is cooled. Further, the Peltier element 61 has a principle that when the surface 61a absorbs heat, the opposite surface inevitably generates heat, so that the cooling mechanism 60 is provided with a heat radiating portion 62 and a fan portion for dissipating the generated heat to the outside. 63. This cooling mechanism 6 can be realized by combining well-known members. When the laser beam irradiation unit 50A irradiates the pulsed laser beam to perform the splitting/cracking process, the cooling mechanism 60 cools the surface I 〇a of the workpiece 1 from the stage 7 side, thereby achieving the above-described splitting/ The efficiency of cracking processing is high. Further, the cooling process of the cooling mechanism 60 is preferably controlled integrally with the processing by the processing unit. However, the constituting stage 7 shown in Fig. 12 has the boring portion 71 at the center portion of the back surface 7b on the side opposite to the upper surface 7a on which the workpiece 1 is placed. Further, the cooling mechanism 60 is disposed such that the Peltier element 61 approaches the stage 7 by the boring portion 71. That is, in the stage 7, only the formed portion of the boring portion 71 becomes thinner than the other portions. In the case of this configuration, the mounting surface 10a of the workpiece 1 is more effectively cooled by the Peltier element 61. Further, in this case, in order to prevent the stage 7 from moving to the observation unit 5B, it does not interfere with the cooling mechanism 60, and at least one of the stage 7 and the cooling mechanism 60 is provided with a not shown. A moving mechanism that moves in a vertical direction toward the paper surface. Alternatively, it may be a direction in which the direction of the stage 7 of the moving mechanism 7111 is perpendicular to the plane of the paper, and the boring portion 71 is extended in the corresponding direction. 154922.doc -38-201204500 &lt;Modifications&gt; The aspect in which a temperature difference is generated between the placement surface and the surface to be processed is not limited to the above embodiment. For example, instead of cooling the load, the side of the machined surface is heated, and the same effect can be obtained by this. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) to (e) are explanatory views of the processing of the first processing pattern; Fig. 2 is the surface of the workpiece which is formed by the splitting process of the i-th processing pattern to form the dividing starting point. Fig. 3 is an image of the surface of the sapphire C-plane substrate which is divided by the processing of the first processing pattern and which is formed along the division starting point, from the surface (4) to the cross section (4); Fig. 4 (a) to (4) FIG. 5 is a schematic view showing a processing state of a workpiece of a second processing pattern; FIG. 5 is an optical microscope image of a surface of a workpiece to be formed by a splitting/cracking process of the second processing pattern; Processing of the pattern to form the sapphire soil plate of the starting point of the division~ The image of the surface (c surface) to the cross section after the division of the starting point of the sea knife; Figure 7 (a), (b) shows the processing of the third processing pattern FIG. 8 is a view showing a relationship between a predetermined processing line of the third processing pattern of the table tf and a predetermined position of the irradiated area; and FIG. 9 is a view schematically showing the configuration of the laser processing apparatus 50 according to the embodiment of the present invention. Schematic diagram; Fig. 1 Example 7^ Optical system 5 FIG. 9 is a schematic view showing the configuration of the optical path setting mechanism 5c; and 154922.doc -39-201204500. FIG. 12 is a view showing a configuration and an arrangement position of the cooling mechanism 60.

Cl~C3, Clla, Cllb, C2, C24 split/cleavage surface [Description of main components] 1 2 3 4 5 5a, 54 5c 7 7m 10 10a

50 50A 51 52 53 55 60 61 a 1 ~ a3 Controller control unit Memory section Fixed sheet optical system Lens optical path setting mechanism Stage moving mechanism Processing object (Processed object) Mounting surface Laser processing device Laser beam Irradiation 邹 beam amplifier objective lens system half mirror optical path selection mechanism cooling mechanism Wang Bai Er posts component axis direction

D (stage) moving direction 154922.doc 40- 201204500

L LB, LBO, LB1, LB2 RE, RE1 ~ RE4, RE11 ~ RE15, RE2 BU RE25

SL

SW W1 ' W2 ' W2a &gt; W2b Machining Schedule Line Laser Beam Irradiated Area Laser Source Optical Switch Weak Intensity Section 154922.doc -41 -

Claims (1)

201204500 VII. Patent application scope: i A laser processing device, characterized in that: a light source 'which emits a pulsed laser beam; and a stage 'which is loaded with a workpiece; and further a cooling mechanism for cooling The mounting surface of the workpiece placed on the stage, the workpiece is placed on the stage, and the mounting surface is cooled by the cooling mechanism, and each of the pulsed laser beams is used. The irradiated region of the unit pulsed light is formed so as to be discretely formed on the surface to be processed facing the mounting surface, and the sample stage is moved to irradiate the pulsed laser beam to the workpiece, thereby being The irradiation regions sequentially cause the workpiece to be cleaved or split, thereby forming a starting point for division on the workpiece. 2. A laser processing apparatus as claimed in claim 1, wherein said pulsed laser beam has an ultrashort pulse light having a pulse width of psec. 3. The laser processing apparatus according to claim 1, wherein, when the pulsed laser beam is irradiated to the workpiece, the cooling mechanism is disposed under the load σ, and the cooling mechanism cools the load from below. The object-stage' cools the above-mentioned mounting surface. 4. The laser processing apparatus according to claim 3, wherein the cooling mechanism includes a Peltier element, and the material element is close to the stage at least when the pulsed laser beam is irradiated to the workpiece. In the state of the arrangement, the above-described stage is cooled by the above-described Peltier element, thereby cooling the mounting surface. 154922.doc 201204500 5. The laser processing apparatus according to claim 3, wherein the lower side 5 of the stage has a boring portion 'the cooling mechanism ..., the raft is made by the boring portion The above-mentioned cutting table is arranged in a close manner. 6. The laser processing apparatus according to claim 1 or 2, wherein at least two irradiated regions w formed by the unit pulse light different from each other when the core for division is formed on the workpiece The above-mentioned workpiece is formed by splitting or splitting in an easily adjacent manner. 7. The laser processing apparatus of claim 6 wherein the formation of the at least two irradiated regions alternates between two of the splitting or splitting directions of the respective workpieces. 8. The laser processing apparatus according to claim 6, wherein the entire irradiated area is formed in an easy direction in which the workpiece is opened or split. 9. The laser processing of claim 1 or 2, wherein the gemstone is disposed, wherein when the starting point for the dividing is formed on the workpiece, the irradiated region is attached to the workpiece Two different splits or splits are formed in an easy direction and in an equivalent direction. 10. The laser processing apparatus according to claim 2 or 2, wherein the shock or stress when the pulse light of each unit is irradiated to the irradiated position is irradiated with the unit immediately after irradiation or simultaneously, and the unit pulse light is The above-described splitting or the above splitting occurs between the irradiation positions. 11 - A method for processing an additive, characterized in that it is used to form a starting point of a division on a workpiece, and includes: a placing step of cutting a workpiece onto a stage and/or In the state in which the mounting target is cooled in a state in which the mounting surface of the workpiece and the stage relative to I54922.doc 201204500 is cooled, the pulsed laser beam is irradiated with the unit pulsed light in the unit The workpiece is irradiated onto the workpiece so as to be discretely formed on the surface to be processed, whereby the workpiece is sequentially opened or split between the 曰, ?, and the shot regions. A starting point for division is formed on the workpiece. 12. The method of processing the workpiece according to claim 11, wherein the pulsed laser beam has an ultrashort pulse light having a pulse width of psec. The processing method of the workpiece according to claim 11 or 12, wherein in the irradiating step, the cooling mechanism is disposed below the stage, and the stage is cooled by the cooling mechanism to cool the mounting surface. The processing method of the workpiece according to claim 13, wherein the cooling mechanism includes a Peltier element, and in the irradiating step, the Peltier element is used in a state in which the Peltier element is disposed close to the stage. The stage is cooled to cool the mounting surface. The processing method of the object to be processed, wherein at least two of the irradiated regions formed by using the different unit pulsed light are adjacent to each other in an easy direction of splitting or splitting of the workpiece The way it is formed. The method of processing a workpiece according to claim 15, wherein the formation of the at least two regions to be irradiated alternates between the two splitting or splitting directions in which the workpieces are different. The method of claim 16, wherein the irradiated I54922.doc 201204500 region is formed integrally along the easy opening or splitting direction of the workpiece. 18. The method of processing a workpiece according to claim 11 or 12, wherein the irradiated region is formed in a direction equivalent to two different splitting or splitting directions of the workpiece. 19. The method of processing a workpiece according to claim 11 or 12, wherein the source of the pulsed laser beam is moved relative to the workpiece, and the outgoing direction of the pulsed laser beam is opposite to the corresponding object. The surface in which the moving direction is perpendicularly changes periodically, whereby a plurality of the irradiated regions satisfying the orthodontic arrangement relationship are formed on the workpiece. The method of processing a workpiece according to claim 11 or 2, wherein a plurality of emission sources of the pulsed laser beam are relatively moved with the workpiece, and the unit pulse light of each of the emission sources is made. The irradiation timing is periodically changed, thereby forming a plurality of the irradiated regions satisfying the zigzag arrangement relationship on the workpiece. [Claim 21] The method for processing a workpiece according to claim 11 or 12, wherein, in the irradiating step, the impact or stress when the unit pulse light is irradiated to the irradiated position is irradiated with the irradiation or the stress immediately before or at the same time The above-described splitting or the above-described splitting occurs between the irradiated positions of the unit pulsed light. 22. A method for dividing a workpiece according to the method for dividing a workpiece, comprising: a placing step of loading a workpiece on a stage; and an irradiation step of: The irradiated light beam is irradiated to the irradiated region of each unit pulsed light in a state in which the surface of the processed laser beam is cooled with respect to the mounting surface of the I54922.doc. 201204500. Irradiating the surface on the surface to be processed, whereby the object to be irradiated is sequentially opened or split between the objects to be irradiated, thereby forming a starting point for dividing the workpiece; And a dividing step of dividing the workpiece formed with the dividing starting point by the irradiation step along the dividing starting point. 154922.doc