TW201144265A - Compound, polymer comprising the compound, and chemically amplified resist composition comprising the polymer - Google Patents

Abstract

Provided are a compound, a polymer containing this compound, and a chemically amplified resist composition including the polymer, and a compound represented by the following formula (1) and a polymer containing the compound as a monomer are provided. wherein in the formula (1), the definitions of R11, Q1, Q2 and A+ are as described in the specification. When the compound and a polymer containing this compound as a monomer are used in a chemically amplified resist composition, the resist composition may have excellent sensitivity and higher stability with a reduced amount of gas discharge, and may have higher resolution and lower line-edge-roughness.

Description

201144265 jo jplf VI. Description of the Invention: [Technical Field] The present invention relates to a novel compound, a polymer containing the same, and a chemically amplified resist composition containing the same, which uses the character and The polymer produced by polymerizing the compound monomer causes the two components to be dispersed and conformed to form a fine _, which has characteristics such as high adhesion, local sensitivity, and high thermal stability (IV) reduction in gas generation amount, and Improve resolution and edge margin. More particularly, the present invention relates to novel compounds which are capable of producing photoresists which are capable of using various radiations such as KrF excimer lasers, ArF excimer lasers and the like, and infrared radiation, Forming a pattern under X-rays (such as synchrotron radiation) and charged particle radiation (such as electron beam), so it can be used for micro-processing; a polymer obtained by polymerizing a compound as a monomer; and a chemical amplification type containing the polymer Photoresist composition. [Prior Art] Since lithography used in the semiconductor industry and similar industries has recently been replaced by the next 50 nm technology, it is expected that new and improved technologies will emerge. Although lithography using far ultraviolet radiation is an important technique for such patterning, the technique of achieving a sub-32 nm pattern requires very difficult manufacturing. The use of a 193 nm wavelength lithography technique is considered to be an important way to implement the technique of manufacturing a sub-32 nm pattern in the future, and this technique can be made possible by increasing the numerical aperture (NA). According to Rayleigh's equation, the numerical aperture can be increased to increase the refractive index of the immersion immersion fluid or sub->resistance, and the analytical yield can be increased simultaneously with the 4 201144265 38535pif. In addition, an increase in refractive index can increase the depth of focus (D〇F). Κ = (Κ1·/1)/(ΝΑ), NA=72sin0, R=resolution, 2=wavelength 'NA=numerical aperture, ^refractive index, buckle incident angle. λ improves the demand for novel photoresist compositions such as resolution, sensitivity, refractive index, and line edge roughness (LER). There is always a need to increase the refractive index of the active photoresist and obtain higher sensitivity. Research on resistance technology is already underway. However, the results of these studies are unsatisfactory in achieving a finer semiconductor integrated circuit, and there is a problem that the speed of light is lowered. Furthermore, it is a chemical amplification type that allows the introduction of a photoacid generator into a photoacid generator with high sensitivity and high stability while reducing gas emissions, and having high & resolution and low line edge roughness. Photoresist composition. SUMMARY OF THE INVENTION An object of the present invention is to provide a novel compound which can be used as a photoacid generator or monomer in a chemically amplified photoresist. Another object of the present invention is to provide a polymer containing the above compound as a monomer which can be used in a chemically amplified resist composition. The chemically amplified photoresist composition has excellent sensitivity and high stability while reducing gas emissions, and also has high resolution and low line edge roundness. In order to achieve the above object, a compound of one aspect of the present invention is represented by the formula (1):

ojcQ1 5 (1) 201144265 38535pif In the formula (丨), R" denotes an alkoxy group consisting of a hydrogen atom, an alkyl group having a carbon number of 1 to 10, a carbon number of 1 to 10, and a soil number of 1 to 10. Any one selected from the group consisting of: (^ and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. Another aspect of the present invention The polymer contains a repeating unit represented by the formula (2):

In the formula (2), R11, r41 and r42 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a perfluoroalkyl group having 1 to 1 carbon number, and an alkoxy group having 1 to 10 carbon atoms. Any one selected from the group consisting of; q and ^ each independently represent any one selected from the group consisting of a hydrogen atom and a dentate atom; and A+ represents an organic counter ion. The polymer may be a polymer represented by the following formula (3):

Wherein in the formula (3), 'R}i, ~, core 3, R14, R41, R42, R43, R44, R46, R47 and R48 each independently represent a hydrogen atom, a carbon number 丨~1〇6 201144265 38535pif alkane Any one selected from the group consisting of a perfluoroalkyl group having 1 to 10 carbon atoms and an alkoxy group having 1 to 10 carbon atoms; Qi&& each independently representing a gas atom and a S atom Any one selected from the group; r21, r22, and R23 each independently represent a group consisting of a hydrogen atom, a nucleus, a heterofilament, a cyclofilament, a heterocycloalkyl aryl group, a heteroaryl group, and combinations thereof. Either 'A denotes an organic counter ion; X denotes a polymer unit derived from an olefin monomer; and m, n, 0 and P are respectively in the following ranges: 0 < 1 young. 4, 0 < mS 0.5, 1^0.5 '0%0·5 and 00<pS0.2, while l+m+n+〇+p=l. The above polymer may have a weight average molecular weight of 2, 〇〇〇~1 〇〇, and may have a molecular weight distribution of 1 to 5. Another chemically amplified photoresist composition of the present invention comprises a polymer comprising a repeating unit of the formula (2). [Embodiment] Hereinafter, the present invention will be described in more detail. The terms used in the description of the present invention are defined as follows. ^ Unless otherwise specifically stated herein, a halogen atom means any one selected from the group consisting of fluorine, chlorine, bromine and iodine. Unless otherwise specifically stated herein, examples of leuco bases include a primary alkyl group, a primary alkyl group, and a tertiary alkyl group. Unless otherwise specifically stated herein, a perfluoroalkyl group means an alkyl group in which a part of a hydrogen atom or all hydrogen atoms are replaced by a fluorine atom. Unless otherwise specifically stated herein, perfluoroalkoxy means that a portion of a hydrogen atom or all of the money is alkoxylated by a gas atom. Unless otherwise specifically stated herein, all compounds and substituents may be substituted or not peaked by 201144265 38535pif. Herein, substituted means that the hydrogen atom has been replaced by any one selected from the group consisting of: an atom, a thiol group, a nitro group, an amine group, a thio group, a methylthio group, Alkoxy, guess, acid, % oxy, ketone, g-, benzyl, acetyl, ketone, alkyl, valence, ring, heterocyclic, propylene Base, benzyl, aryl, heteroaryl, derivatives thereof, and combinations thereof. - Unless otherwise specifically stated herein, the word "hetero" means a carbon atom, - a hetero atom substitution of -1 selected from the group consisting of: N, 〇, S, and p. By way of example, "heteroalkyl" means that one to three carbon atoms in the carbon atom of the alkyl group are substituted with a hetero atom. Unless otherwise specified herein, alkyl means a branched group having a carbon number of 1 to 30; miscellaneous * means a heteroalkyl group having a carbon number of 1 to 3; Perfluoroalkyl group means a perfluoro group having a carbon number of 1 to 1 = = a perfluorosilyl group means a perfluorosilyl group having a carbon number L; a fluorenyl group means a cycloalkyl group of carbon; and a heterocycloalkyl group means a carbon number of 2 to 32. a heterocycloalkyl group; an aryl group having a carboxyl group number of 6 to 30; and a heteroaryl group means a heteroaryl group having 2 to 30 carbon atoms. Unless otherwise specifically stated herein, examples of cycloalkyl groups include monocyclic, bicyclic, tricyclic, and tetracyclic groups. Examples of the loop filament also include an adamantyl group, a norbornyl group, and a polycyclic cycloalkyl group having a norbornyl group. Unless otherwise specifically stated herein, aryl means a benzene ring-containing compound or a derivative thereof, and examples of the aryl group include toluene and xylene, wherein the alkane side chain is bonded to a benzene ring; biphenyl, wherein two or more benzenes thereof The ring is linked by a single bond; xanthene and anthracene, wherein two or more of the stupid rings are linked by a cycloalkyl or heterocycloalkyl group; and naphthalene and an anthracene, wherein two or more benzene rings are combined. 8 201144265 38535pif Unless otherwise specifically stated herein, an olefin means an unsaturated hydrocarbon compound containing a double bond, and examples thereof include, but are not limited to, an alkene, a acetoacetate, a styrene, an ice thinner, an indene.苊, 苊 and cough South two show j. The compound of one aspect of the present invention is represented by the following formula (1). = 〇 0 P1 0- (1) In the formula (1), it represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a perfluoroalkyl group having a carbon number of i to 1 fluorene, and an alkoxy group having 1 to 10 carbon atoms. Any one of the selected ones of the group, and preferably one selected from the group consisting of a hydrogen atom, a trifluoromethyl group, a carbon number of 碳5 and an alkyl group having a carbon number of 1 to 5; j ...^ And Q2 each independently represent (4) any one selected from the group of atoms and halogen atoms, and may preferably be a fluorine atom, and the base thereof is an organic counter ion, which may preferably be represented by the following formula (5) or (6) ^ R2

:丨S—R (5 杂 八 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中 中Any one of the selected ethnic groups; 'R4—丨-R5 (6) each independently represents any one selected from the group consisting of silk, substrate, read burn, ', aryl and heteroaryl Any f(5) may be selected from the group consisting of the following formulas (5_i) to (5_uii)

[5-i]

〇CH3 [5-v]

F [5-ίχ]

D, I [5-xi 】 [5-xii ] 201144265 38535pif

O

[5-xvi 1

[5-xxi ]

〇, ;5-xxii ] Equation (6) can be selected from the group consisting of the following formulas (6-i) to (6-ix): 〇·|+_Ο~0εΗ3 [6-1] [ 6-iii ] 〇-'+ [6-iv ] [6-v] [6-vi ]

[6-vii ] [6-viii ] [6-ix] 11 201144265 The compound of the formula (1) functions as a monomer and a photoacid generator. Under this circumstance, the degree of cleavage and LER is improved by adjusting the carbon number of the main chain of the compound to ensure that the poly(polymer) obtained by polymerizing the compound (1) is exposed to generate an acid space. It also adjusts the acid diffusion distance suitable for patterning. The polymer of another aspect of the present invention contains a repeating unit represented by the following formula (2).

(2) In the formula (2), _ Rii and R42 each independently represent a hydrogen atom, a carbon number of 1 to 1 Å, a perfluorocarbon group having a carbon number of 1 to 10, and a carbon number of 1 to 1 Å. Any one selected from the group consisting of alkoxy groups, and preferably selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an alkyl group having 1 to 5 carbon atoms, and an alkoxy group having 1 to 5 carbon atoms. One; Qi and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom, and may preferably be a fluorine atom; and A+ represents an organic counter ion, and its definition and formula (丨) The same is true and therefore will not be repeated for further description. The polymer is produced by directly polymerizing a compound of the formula (1) which has a photoacid generator in the polymer to introduce a large amount of the photoacid generator. (d), can produce a high exposure sensitivity of the photoresist containing it 12 201144265 38535pif degree and higher stability, and a low LER simultaneous exposure after the amount of emission of gas produced by the reduction of the amount of gas. The polymer is a multicomponent copolymer' and may be a block copolymer, a scrambled copolymer or a graft copolymer. Further, the polymer containing the repeating unit represented by the formula (2) may be a polymer having any one selected from the group consisting of the following repeating units: a repeating unit having an acid labile group, and a hydroxyl group a repeating unit, a repeating unit comprising an adhesive group of a lactone ring, and combinations thereof. More specifically, the polymer may be a polymer represented by the following formula (3):

In the formula (3), R", R12, R13, R14, R41, R42, r43, r44, r45, R, R47 and R48 each independently represent a hydrogen atom, a carbon number of 1 to 10 Å, and carbon. Any one selected from the group consisting of a perfluoroalkyl group having 1 to 10 and an alkoxy group having 1 to 10 carbon atoms, and preferably a hydrogen atom, a trifluoromethyl group or a carbon number. And any one selected from the group consisting of alkoxy groups having 1 to 5 carbon atoms; (^ and Q2 each independently represent a hydrogen atom and a halogen atom and are selected from the group, and may preferably be a fluorine atom; A is not an organic counterion' because its definition is the same as that described in the formula (1), so it will not be repeated for further description; 13 201144265 38535pif Symbols m, n, o and p are divided into the following ranges: 〇 < κ 〇4, 〇<η^〇5, 0<η<0.5, (Κ〇<0.5 and 0 < pS0.2, while 1+m+n+〇+p=1; and X represents an olefin monomer derived from The olefin monomer may preferably be any one selected from the group consisting of acrylate, styrene, norbornene, hydrazine, hydrazine, furanedione and derivatives thereof. Formula (3-a) Polymerized units of one of (3-f) represented by:

In the formulae (3-a) to (3-f), R15, R49 and 5'' each independently represent a perfluoroalkyl group having a hydrogen atom, an alkyl group having 1 to 1 carbon number, and a carbon number of 1 to 10. And any one selected from the group consisting of alkoxy groups having a carbon number of 1 to 10, and each of them may preferably be a hydrogen atom, a trimethyl group, an alkyl group having 1 to 5 carbon atoms, and a carbon number of 1 to 5. Any one selected from the group consisting of alkoxy groups; R3i and R32 each independently represent any one selected from the group consisting of a halogen atom, a thiol group, a cyano group, a thiol group, a nitrile group, a fluorenyl group, and an epoxy group. Base, nitro, amine, thio, methylthio, alkyl, alkoxy, perfluoroalkoxy, alkyl, cycloalkyl, heterocycloalkyl, aryl, heteroaryl, COOR' And COR· 'where R· represents any one selected from the group consisting of an alkyl group, a perfluoroalkyl group, a cycloalkyl group, a 201144265 38535pif aryl group and a cyclic aryl group; an integer representing the number of 〇5'b 〇~ An integer of 5, an integer of c 〇 § §, an integer of Table 0 to 4, an integer of e 〇 〜3, and f represents an integer of 0 to 3. In the formula (3), ^21 R22 and trans 23 each independently represent a group consisting of a hydrogen atom, an alkyl group, a heterodyne*% alkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, and a combination thereof. Any one selected from the group, and preferably selected from the group consisting of the following formulas (4) to (4):

KI

'(r33>h /, '(^33)h (3-i) (3-ϋ) /\/ /—i^(R33)i Ό

(3-iv)

v=° 0 (R33)k (3-V) R35 R34 (3-vi)

-OH into R33 35 R34 (3-vii) (3⁄43⁄4

(3-viii)

33 J, (3-ix) In the formulae (3-i) to (3-ix), the independent representation of the group consisting of the following groups is selected from the group consisting of an oxy group, an a Γ Γ group, a wei group, and a perfluoro group. Silk, perfluorinated ruthenium, halogen atom, toughness, «· base, methylthio, methoxy, methoxy, work soil, murine, nitro, amine, sulfur independent Preferably, the composition is preferably any one selected from the group consisting of R33 to the heart of each paper: hydrogen atom, 15 201144265 38535pif alkyl group having 1 to 6 carbon atoms, alkoxy group having 1 to 6 carbon atoms, carbon a perfluoroalkyl group having 1 to 4, a perfluoroalkoxy group having 1 to 4 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, a halogen atom, a trans group, a cyano group, a nitro group, an amine group, a sulfur group, Methylthio and methoxy. The symbol g represents an integer of 0 to 9, h represents an integer of 〇~9, i represents an integer of 0 to 5, j represents an integer of 0 to 15, k represents an integer of 〇15, and q represents an integer of 0-17, and ! · Indicates an integer from 〇 to 11. The polymer may preferably be a polymer represented by the following formula (4):

,R13 [R43 ,R12 / \ / ►QvwVWV' W\AAJ ΛΑ.0—*0·ΛΛΛΛΛ/' R 么—Ο Ίη Ο, '22 23 44 / Ο R21

Wherein in the formula (4), Rn, R12, Rl3, R14, R41, R42, r43, R44, R45, R46, r47, r48 'Q, q2, A+, R21, R22, r23, 1, m, n, The definitions of 〇 and p are the same as those described for the formula (3), respectively, and therefore will not be further described. In the formula (4), b represents an integer of 0 to 5, and c represents an integer of 〇8. In the formula (4), 'R1S and R49 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a perfluoroalkyl group having 1 to 1 carbon number, and a oxy group having a carbon number of :~:^. Any one selected from the group, and preferably R R 5 and r 49 may each independently be a hydrogen atom, a trifluoromethyl group, a carbon number of 1 to 5, and an alkoxy group having a carbon number of j 5 . Any one of the selected ethnic groups. In the formula (4), Ru represents any one selected from the group consisting of a halogen atom, a hydroxyl group, a cyano group, a carboxyl group, a nitrile group, an aldehyde group, and a ring 16 201144265 38535 pif oxy group, an exact group, Amine, thio, methylthio, silk into # = base, ship base, cycloalkyl, hetero-enzyme, aryl OR 'the towel R' is not from the base, perfluoro-wire, ring burned and nuclear ^ • Any of the selected ethnic groups. Any one selected from the group consisting of the carbon number of the earth's base: 6th wire, stone inverse number 6 decyloxy group, carbon number η base, stone anomaly number 1 to 4 perfluoroalkoxy group, carbon number =: , warp group, aryl group, base, amine group, sulfur group and = and =

Jiake is a polymer produced by a hydrogen atom and a group of the 3_χ domain of the following formula: L-ΟΗ =0 〇λτ (3-χ) light-absorbing thiol-containing polymer) The dimethyl methacrylate polymer is roasted. The acid-filling part is very silky (the vaporization is softened and partially retained in the photoresist film. Therefore, the fluidity of the exposed features is improved, and thus Figure Κ 5 can be selected from the group consisting of the formula (4-aH4-l): 17 201144265 38535pif

(4-a)

(4-b)

(4-c)

(4-d)

(4-e) (4-f) 18 201144265 38535pif

(4-h) (4-i) (4-j) (4-k) (4-g) (4-1). 19 201144265 38535pif In the formulae (4-a) to (4_1}, η η 〇 and P are respectively in the following ranges: 〇 < 丨 < 〇 4, A table dry ^; in the (1) "sentence knife 1, And a molecular weight distribution of 1 to 5 and more preferably a weight average molecular weight of 3, _30, _ and a molecular weight distribution of i 5 〇 〜 3 have a right reset average molecular weight _, _, a polymer used for When the average molecular weight of the photoresist is less than 2, 嶋, the mechanical strength of the resin is not, and the pattern cannot be satisfactorily formed (pattern is broken. In addition, the distribution of the right molecule 1 is greater than 5, and the line edge roughness is It may be defective. Therefore, when the average weight of the object in the photoresist region and the molecular weight distribution are in the above-mentioned range, the photoresist composition exhibits appropriate characteristics in terms of developability, coatability, and heat resistance. The compound represented by the formula (1) can be produced by the method described below. The compound represented by the formula (1) can be produced by the method of the following step: the compound represented by the following formula (7) is represented by the following formula (8). The first step of the compound reaction, and the reaction produced in the first step The compound represented by the composition formula (9) of the second step substitution reaction. 20 201144265 38535pif

O Cl (7) M + - O-S-C- ΌΗ (8)

II 〇 A+Z- (9). In the formulas (7) to (9), M+ represents any one selected from the group consisting of L1+ and NaiK+, and any one selected from the group consisting of (oso2CF3)-, (os〇2c4F9) )_,(〇s〇2c8F . (K(C^ - (Ncc4F9)2) , (C(CF3)3)., (C((!2F5;);>;; (c(C=3, >, F_, C1_, Br_, BF4_, AsF6, and %; and the definitions of n, Q!, and Q2 are the same as those described above with respect to the formula, so the process is not repeated. The reaction of 7: can be carried out by spraying, and the use of either diketone, decylamine, alcohol and a combination thereof can be used as a solvent. It is preferred to use dichlorobenzene = acetonitrile 1 benzene, benzene m The analog reading-emulsion, the first step of the reaction can be carried out in the alkaline catalyst catalyst can be triethylamine, diethylamine, lower, and the test amine, di-erythramine and "combination" (10) Benzene. When the reaction of the first step is carried out in the presence of the test catalyst, the conversion ratio can be increased, and when 仃, the compound represented by the formula (8) can be obtained by the following formula (10): 21 201144265 38535pif

(10) ο In formula (10), any one of the selected ones of the family; the selected one of the groups consisting of the ϊ ϊ ΓΓ ΓΓ 氲 氲 氲 氲 氲 氲 氲 氲 氲 氲 四 四 四 四 四 四 四 四 四 四 四Any one selected from 1 to 3 wind room groups. Good, m is the atomic group of 1 to 5, trifluoromethyl, monodecyl, tribromomethyl and triiod. The thiol group; and the definition of the interesting Q=Q2 is divided into the compounds of the formula (1), and the description thereof will not be repeated for further description. The compound of the formula (10) is prepared by the following steps: the compound of the formula (8) is dissolved in tetrahydrofuran; the reducing agent is slowly dropped in an ice bath. Adding to the solution; after the dropwise addition of the element, increasing the temperature to 40~100〇c to prepare the ruthenium mixture (4); reacting the reverse complex (4) under the solution; then terminating the reaction of the 3 mixture liquid; a solvent; and crystallizing the reaction product. For the method of hydrazine, any crystallization method conventionally used may be used, but specifically, a method comprising the steps of: acidifying the reaction mixture of the removed solvent with a strong acid to pH 5 to 6; concentrating the resulting mixture; The resulting concentrate was made into a slurry by the addition of alcohol 1; the slurry was filtered, and the filtrate was washed again with hexane; then the filtrate was concentrated again; and the product was crystallized from diethyl ether. The polymer containing the repeating unit of the formula (2) can be polymerized by a method of producing a polymer 22 201144265 38535pif ', but a free radical polymerization method is preferred. The polymerization initiator for radical polymerization can be used from azobisisobutyronitrile (AIBN), benzoquinone benzoate (BK), ruthenium peroxide, azobisisohexanenitrile, azobisisopentazole, Any of the selected groups of hydrogen peroxide secondary butyl groups and combinations thereof. The polymerization can be achieved by a square wire such as bulk polymerization, solution polymerization, suspension polymerization, bulk suspension polymerization, and milk (tetra). The solvent for polymerization can be used from the present, transcripts, diphenylbenzene, halogenated benzene, ethyl scale, and tetrahydrogen. One or more of fulc, 1,2_-ethane, ester, ether, lactone, ketone and decylamine are selected. After the completion of the reaction, the unreacted monomer and the product remaining in the liquid of the reaction mixture can be removed by a conventional method for removing these monomers and by-products, and can preferably be used by the method of Solvent to remove these substances. A chemically amplified photoresist composition according to another aspect of the present invention comprises a polymer comprising a repeating monomethane of the formula (2), wherein the amount of the monomer represented by the formula (1) is = the total solid of the polymer for the loo by weight The content can be 〇5~15 weight injury. If the amount of monomer used in the right formula (1) is within the above range, the vehicle sensitivity and stability are obtained, and the gas emission can be reduced. The photoresist composition may comprise a polymer containing a repeating unit of the formula (2) in an amount of 3 wt% and preferably 5 Wt% or more based on the total amount of the photoresist composition. When the f content of the right-handed compound is 3 wt% or less, the effect of containing a polymer is not necessarily the case, and the knife appears. The silk composition may contain, in addition to the polymer, conventional constituents constituting the photoresist group, such as additives or solvents. The photoresist composition comprising the complex unit of the formula (2) can be used for the pattern shape. The method for forming the method includes: coating the photoresist composition on the substrate; and heating the applied photoresist composition. The step of treating 'and south energy 23 201144265 38535pif rays to expose the photoresist composition; and the step of developing the photoresist composition using a developer. Higher energy ray in the range of 13.5 to 250 nm is preferred because it increases resolution while reducing LER. When the novel compound of the present invention and a polymer containing the same are used in a chemically amplified photoresist composition, the photoresist composition can have good sensitivity and high stability while reducing gas emissions, and can have Higher resolution and lower edge seam. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the invention may be embodied in various different embodiments and is not limited to the examples described below. Synthesis of the compound Example 1) Synthesis of difluoro-propyl propyl sulfonate sodium salt 83 g of sodium 3,3-difluoro-3-sulfopropionate sodium salt was dissolved in 160 ml of decyl alcohol and ι in an ice bath. • 2 liters of tetrahydrofuran (THF), and 44 grams of butterfly hydrogen hydride was slowly added dropwise to the solution. After completion of the dropwise addition, the reaction mixture was removed from the ice bath and heated to 6 °C. The reaction mixture was stirred at the same temperature for about 4 hours. The thus stirred reaction mixture liquid was quenched with distilled water to remove the solvent. The reaction mixture obtained after removing the bath was again dissolved in distilled water, and the resulting solution was acidified to pH 5-6 with concentrated hydrochloric acid. The acidified reaction mixture was concentrated again, and methanol was added thereto to obtain a polymer. The bulk material was filtered to remove the inorganic salts, and the filtrate was washed twice with the house. 24 201144265 38535pif The sterol layer was again concentrated, followed by crystallization using diethyl ether. The white solid obtained by crystallization was dried in vacuo, and the structure of the solid was determined by 1H_NMR. Thus, 68.5 g (yield 95%) of difluorohydroxypropane sulfonate sodium salt represented by the formula [A] in the following reaction scheme (1) (3_ethoxy-1,1-difluoro-3-) was obtained. Sodium oxypropane small sodium). h-NMR (gas-d3, internal standard: tetramethyl decane): 5 (ppm) 3 3 (t, 2H), 4.58-4, 68 (t, 2H). [Reaction Scheme 1]

NaBH4

THF, MeOH

Naofg eight vOH +Et〇H

[A] wherein in Reaction Scheme 1, Me represents a thiol group, and Et represents an ethyl group. 2) Synthesis of 2-mercaptopropanuric acid-2,2-difluoro-2-stone base propyl acetate salt 68 g of the compound produced in the synthesis example 1) of the compound in the reaction scheme (1) [A] represents difluorohydroxypropane sulfonate sodium salt (3_ethoxy^, bdifluoro-3-isooxypropyl-1-hetate sodium) and 54.6 ml of mercapto propylene xenon 500 ml of dichlorodecane (MC) were mixed and the resulting mixture was stirred. Then, 3.2 g of N,N'-didecylaminopyridine (DMAP) and 50 mg of a polymerization inhibitor (hydroquinone monomethyl ether (MEHQ)) were added to the mixture at 15 to 25 ° C, and the resulting mixture was mixed. 104 ml of triethylamine (Et^N) placed in a dropping funnel was slowly added dropwise to the mixture at 15 to 25 ° C to prepare a reaction mixture. The mixture was stirred at 15 to 25 ° C; the reaction mixture was mixed for 3 hours' and then the degree of reaction was confirmed by NMR, and the reaction was terminated. 25 201144265 38535pif After the reaction of the reaction mixture was terminated, distillation under reduced pressure was carried out to remove the second gas calcination as a reaction solvent, and 300 ml of steamed crane water was added thereto. Subsequently, potassium carbonate was added to the reaction mixture to obtain a saturated solution. After stirring the saturated solution for 2 hours, 'the solid thus produced was filtered to obtain 81 g (yield: 86%) of 2-methyl-acrylic acid 2,2_ represented by the formula [B] in the reaction scheme 2. Sodium difluoro-2-sulfopropyl ester (sodium 1,1-difluoro-3.(decyl propylene decyloxy)propane-1-sulfonate). The structure of the salt was determined by 1 H-NMR. b-NMR (DMSO, internal standard: tetradecyl sulphate): 5 (ppm) 1.91 (s, 3H), 3.3 (t, 2H), 4.57-4.67 (t, 2H), 5.77 (s, 1H), 6.11 (s, 1H). [Reaction Scheme 2]

NaO-S'CF2CH2CH2OH

1) Et3N, 2) DMAP 3) MEHQ

MC

Na〇-S-CF2CH2CH2〇

[B] wherein in Reaction Scheme 2, hydrazine represents an ethyl group. 3) Synthesis of 2-mercaptoacrylic acid-2,2-difluoro-2-sulfopropyl ester benzhydryl phenyl sulfonium salt 31 g of 2-methacrylic acid produced in Synthesis Example 2) of the compound 2,2-Difluoro-2-sulfopropyl ester sodium salt (込丨·Difluoro_3_(mercaptopropenyloxy)propen-1-nart naphthalate) and 35 g in the following Reaction Scheme 3 The diphenyl phenyl phenyl trifluorodecane sulfonium salt represented by the formula [c:| is dissolved in 3 ml of dichloromethane (MC) and 300 ml of distilled water to prepare a reaction mixture under vigorous stirring. The reaction mixture was subjected to a two-layer reaction for 3 hours. An aliquot of the organic layer (aliqU〇t) was obtained after the mixing was carried out to determine the degree of reaction by 19f-nmr at 26 201144265 38535pif, and the reaction was terminated. The organic layer of the reaction mixture was collected and the solvent was removed. A good solvent after the reaction of the friend) and a hospital (which is a poor solvent) washing machine (crystals obtained as a solvent. _, and then remove the crystals obtained by drying under reduced pressure to obtain 4 96 〇 / 〇) In the following Reaction Scheme 3, the acid-2,2-difluoro-2-hydroxypropyl acetoacetate diphenylmethylphenyl salt represented by the formula [D]. By setting the structure of the salt. W-NMR (chloroform-d3, internal standard: tetradecyl sulphate): ^卯% (s, 3H), 2.43 (s, 3H), 3.3 (t, 2H), 4.82 (t, 2H), 5 6 6.22 (s, 1H), 7.43-7.80 (m, 14H). ’ ” [Reaction Scheme 3] [Β] II Na〇j, g〆 0 F2

Synthesis Example of Polymer (Example 1) As a monomer for polymerization '13 g of 2-mercapto-2-adamantyl acrylate, 8.4 g of azlactone methacrylate, 11.6 g of fluorenyl group 3-Acetyl-1-adamantyl acrylate and 1 gram of 2-mercaptopropionic acid-2,2-difluoro-2-reverse propyl diphenyl represented by the formula [D] in the above Reaction Scheme 3 The methylphenylphosphonium salt was dissolved in 58 g of 1,2-dichloroethane, thereby preparing a monomer mixture. 27 201144265 38535pif Add 3.7 g of norbornene, 2.5 g of azobisisobutyronitrile (AIBN) as a polymerization initiator and 117 g of 1,2-diethane (as a polymerization solvent) to 250 ml A flask was provided to provide a reaction bath, and nitrogen gas was introduced into the reaction bath. The mixture was stirred for 1 hour while maintaining the temperature at 15 to 25. 〇 When the temperature of the reaction bath was 65 ° C, the above monomer mixture was slowly added dropwise to the reaction bath over 1 hour to prepare a reaction mixture, and the reaction mixture was allowed to react for 16 hours. After completion of the polymerization reaction, the reaction mixture was cooled to 15 to 25 ° C, and the reaction product was precipitated with hexane, and the precipitate was filtered. The precipitate was washed several times with the same solvent as during the filtration process, and the thus obtained crystal was dried under reduced pressure to give 37 g (yield: 793⁄4) of the polymer of Example 1 represented by (11). In the example 丨1 = compound represented by the following formula (11), 1 = 0.24, m = 0.25, η = 0.30, 〇 = 0.20, and p = 〇 〇1. The polymer of Example 1 has a polystyrene equivalent weight of 1,190, a molecular weight (Mw) and a molecular weight distribution of 1.57 (weight average molecular θ 数目 number average molecular weight ratio, Mw / Mn). Dong Wei,

(Example 2) m Poly 28 201144265 38535 pif was produced in the same manner as in Example 除了 except that the individual amounts of the monomers used for the polymerization were adjusted to change the values of the formulas (ι, η, 〇, and p). The values of 丨, m yT 1 m, n, 〇 and p in the formula (11) of the polymer are as follows: 1 = 0.24, m = 0.25, n = 0.30, (iv) s 0 υ.18 and p = 0.03. (Example 3) The polymer was produced in the same manner as in Example i except that the individual amounts of the monomers used for the polymerization were adjusted to change the values of bm, η, . and p in the formula (1). In the formula (9) of the polymer of Example 3, The values of m, n, 〇 and p are as follows: 1 = 0.24, m = 0.25, η = 0.30, 〇 = 016 and p = = 〇〇 5. (Example 4) 'In addition to adjusting the monomer used for polymerization The polymer was produced in the same manner as in Example i by varying the amount of 1, m, η, 〇 and p in the formula (丨丨). The polymer of the example 4 was in the formula (11), m, m, n The values of 〇, 〇 and p are as follows: 1 = 0.24 ' m = 0.25, η = 0.30, 〇 = 〇 · 14 and p = = 〇〇 7. (Comparative Example) As a monomer for polymerization 'mix 10.0 g of methyl group Acrylic acid 2_mercapto-2-golden S S, 7.3 g y-butyl The purpose of the S is to base the amino acid from the purpose and 1 〇 1 gram of 3-hydroxy-1-carbobutyl acrylate, the mixture is dissolved in the gram of the ketone, and the early mixture is prepared. The temperature is slowly increased to 65 ° C. 3.7 g of norbornene, 2.5 g of azobisisobutyronitrile (aibn) (as a polymerization initiator) and 117 g of 1,2-digas (as a polymerization solvent) are added. The reaction bath was supplied to a 250 ml flask, and nitrogen was introduced into the reaction bath. The mixture was stirred for 1 hour while maintaining the temperature at 15 to 25 ° C. When the temperature of the reaction bath was at 65 ° C, it was used for 1 hour. The above monomer mixture is slowly added dropwise to the reaction bath to prepare a reaction mixture, and the reaction mixture is reacted for 16 hours. After the polymerization is completed, the reaction mixture 29 201144265 38535 pif liquid is cooled to 15 to 25. (: The reaction product was precipitated with hexane, and the precipitate was filtered. The precipitate was washed several times with the same solvent as in the filtration process, and the crystals thus obtained were dried under reduced pressure to give 25 g (yield: 91%). In the following formula (12), 1 = 0.28, m = 0.24, n = 0. 24 and 〇 = 〇 24. The polymer represented by the following formula (12) has a polystyrene-equivalent weight average molecular weight (Mw) of 1780 and a molecular weight distribution of 1.68 (Mw/Mn^*).

Preparation of photoresist and property evaluation (Example 1) Each 100 parts by weight of the polymer of Example i, 75 parts by weight of tetraammonium oxynitride was dissolved as a basic additive in 1000 parts by weight of propylene glycol oxime ether acetate, and then 0.2 micron. A membrane filter was used to filter the solution to prepare a photoresist. The photoresist was applied to the substrate using a spinner and dried at 11 ° C 3 C for 90 seconds to form a film having a thickness of 2 2 μm. The film thus formed was exposed using an ArF excimer laser stepper (transparent aperture: 〇.75), and the film was heat treated at 12 ° C for 90 seconds. The substrate was treated with 2.38 wt% of hydrogen and oxygen = 4% of the solvent, and the substrate was washed and dried. Thus, the substrate is a photoresist pattern. (Examples 2 to 4) 201144265 38535pif In addition to the use of the polymer synthesized in Examples 2 to 4 of the polymer synthesis, each of the polymeric maternal preparation groups and the characteristics of the sample 1 of 100 weights of the polymer were A photoresist pattern was formed in the same manner as in Example 1 for preparing photoresist and property evaluation, and the characteristics of the photoresist pattern were evaluated. (Comparative Examples 1 to 3) The same procedure as in Example 1 for preparing photoresist and property evaluation was carried out except that the polymer of the comparative example represented by the above formula (12) was used to produce a photoresist having the composition shown in Corporal 1. The photoresist pattern is evaluated and the characteristics of the photoresist pattern are evaluated. [Table 1] A polymer acid generator (1) Ancillary additive (2) Comparative Example 1 100 3 1 - Comparative Example 2 100 5 1 Comparative Example 3 100 7 1 (content: parts by weight) Acid generator: Nine Triphenyl sulfonium fluorobutane C2) Ingredient Additive: The characteristics of Examples 1 to 4 and Comparative Examples 1 to 3 were evaluated in terms of sensitivity, resolution and LER. The results are shown in Table 2 below. in. When evaluating sensitivity, it is possible to define an exposure amount with a 1:1 line width = 0.10 μm line/space (L/S) pattern after development as the optimum exposure, and define the optimum exposure amount as the sensitivity. . The minimum pattern size resolved at this time is defined as the resolution. LER is measured by critical dimension scanning electron microscopy (CD SEM) and is based on 5 grades (eg 1 (very poor), 2 (poor), 3 (medium), 4 31 201144265 38535pif (good) and 5 ( Excellent)) to rate the results of the assessment. [Table 2] Sensitivity (mJ/cm^2) Resolution (nano) LER Example 1 15 70 4 Example 2 18 70 4 Example 3 15 90 4 Example 4 13 70 5 Comparative Example 1 19 90 2 Comparative Example 2 17 80 3 Comparative Example 3 16 90 3 According to Table 2, Examples 1 to 4 exhibited better sensitivity than Comparative Examples 1 to 3, and also exhibited better resolution. Particularly in the case of LER, Examples 1 to 4 exhibited much superior results compared to the comparative examples. Therefore, the preferred embodiments of the present invention have been described in detail, but the scope of the present invention is not intended to be limited thereto, and various modifications and improvements may be made by those skilled in the art using the basic concepts of the invention as defined in the following claims. Within the scope of the invention. 32

Claims (1)

201144265 38535pif VII. Patent Application Range: 1. A compound represented by the following formula (1): (1), wherein in the formula (1), Rii is represented by a group consisting of a nitrogen atom, a carbon number of 1 to 10, a perfluoroalkyl group having 1 to 10 carbon atoms, and an alkoxy group having 1 to 10 carbon atoms. Any one selected; Qi and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. 2. A polymer comprising a repeating unit represented by the following formula (2): In the formula (2), 33 201144265 R&quot;, Han 41 and R42 each independently represent a hydrogen atom, a carbon number of 1 to 10, a perfluoroalkyl group having a carbon number of 1 to 1 and a carbon number of 1 to 10. Any one selected from the group consisting of alkoxy groups; Q1 and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. 3. The polymer of claim 2, which is represented by the following formula (3): In the formula (3), RH ' R12 ' R13 ' R14 ' R41 ' R42 ' R43 ' R44 ' R45 ' R46 ' 仏 7 and each independently represent a hydrogen atom, an alkyl group having a carbon number of 1 to 10, and a carbon number Any one selected from the group consisting of a perfluoroalkyl group of 1 to 10 and an alkoxy group having 1 to 1 carbon atom; Qi and Q2 each independently represent a group selected from a hydrogen atom and a halogen atom; One; the ruler 22 and the R_23 each independently represent a group selected from the group consisting of a hydrogen atom 'alkyl group, a heteroalkyl group, a heterocyclic group, a group, a heteroaryl group, and combinations thereof. One; 34, 201144265 38535pif A+ denotes an organic counter ion; X denotes a polymer unit derived from an olefin monomer; and the symbols b, n, 0 and p are respectively in the following ranges: 〇 &lt; 匕〇 4, 〇 &lt;m&lt;〇'5 ' 〇&lt;η$〇·5 '0幺〇&lt;0.5 and 〇&lt;p"〇.2, while l+m+n+o+p=l. 4. The polymer of claim 3, which has a weight average molecular weight of from 2,000 to 100,000, and a molecular weight distribution of from 1.5 to 5. A chemically amplified resist composition comprising a polymer comprising a repeating unit represented by the following formula (2): In the formula (2), Rii, % and R42 each independently represent a hydrogen atom, an alkyl group of a carbon number, a perfluoroalkyl group having a carbon number of 1 to 10, and an alkoxy group having a carbon number of 1 to 10. Any one selected from the group; the group indicates that A+ composed of a hydrogen atom and a _ atom represents an organic counter ion. 35 201144265 38535pif IV. Designated representative map: (1) The designated representative figure of the case: None (2) The symbolic symbol of the representative figure is simple: 5. If there is a chemical formula in this case, please reveal the best display of the invention features __^11 The 201144265 38535pifl is the 100119119 Chinese manual without a slash correction. This amendment date: (10) August 25 invention patent specification (this specification format, order and bold type 'do not change any more' ※ mark not to fill out) ※Application No.: I00119 9 7 4 ※Application deadline: ※IPC classification: 1. Invention name: (Chinese/English) Compound, polymer containing the compound, and chemically amplified photoresist composition containing the polymer. COMPOUND, POLYMER COMPRISING THE COMPOUND, AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE POLYMER II. SUMMARY OF THE INVENTION The present invention provides a compound, a polymer containing the same, and a chemically amplified photoresist composition comprising the same, and provided by a compound represented by the following formula G) and containing the compound as a monomer Polymer. In the formula (1), the definitions of Rn, Qi, Q2 and A+ are as described in the specification. When the compound and the polymer containing the compound as a monomer are used in the chemically amplified photoresist composition, the photoresist composition can have excellent sensitivity. 1 201144265 38535pifl is the 100U9974 Chinese manual without a sizing correction. Date (August 25th, 2016). Description of the Invention: [Technical Field] The present invention relates to a novel compound, a polymer containing the same, and a chemically amplified resist composition containing the same, which is used The character and the polymer produced by polymerizing the compound as a monomer, so that the composition is uniformly dispersed and suitable for forming a fine pattern having characteristics such as high adhesion, high sensitivity, and high thermal stability while reducing the amount of gas generated, And can improve the resolution and line edge roughness. More particularly, the present invention relates to a novel compound which can be used to fabricate photoresists which are capable of using various radiations such as KrF excimer lasers, ArF excimer lasers and the like, far infrared radiation, X a pattern formed by radiation (such as synchrotron radiation) and charged particle radiation (such as electron beam), and thus can be used for micro-processing; a polymer obtained by polymerizing a compound as a monomer; and a chemical large-sized light containing the polymer Blocking composition. [Prior Art] Since lithography used in the semiconductor industry and similar industries has recently been replaced by the next 50 nanotechnology, it is expected that new and improved technologies will emerge. Although lithography using far ultraviolet radiation is an important technique for such patterning, the technique of achieving a sub-32 nm pattern requires a difficult process. The use of a 193 nm wavelength lithography technique is considered to be an important way to implement the technique of manufacturing a sub-32 nm pattern in the future, and this technique can be made possible by increasing the numerical aperture (NA). According to the Rayleighs equation, the numerical aperture can be increased to increase the refractive index of the immersion fluid or the immersion photoresist, and the resolution can be 201144265 38535pifl. Correction date: August 25, 100 is the 10011 &quot;74 Chinese manual without The line correction is also increased at the same time. In addition, an increase in refractive index can increase the depth of focus (D〇F). R=(K1-/l)/(NA) &gt; NA=wsin^ » Resolution, h wavelength, NA = numerical aperture, gamma refractive index, buckle incident angle. The need to improve the novel photoresist composition such as resolution, sensitivity, refractive index and line edge roughness (LER) has always existed, and the refractive index of the photoresist and the photoresist technology for obtaining higher sensitivity have been studied. The work has been carried out, and the results of these studies are unsatisfactory in achieving a finer semiconductor integrated circuit, and there is a problem that the speed of light is lowered. ^ Furthermore, the demand for chemically amplified photoresist compositions with high resolution and low line edge roughness is reduced for the introduction of photoacid generators with higher sensitivity and higher stability while reducing gas emissions. increase. SUMMARY OF THE INVENTION An object of the present invention is to provide a novel compound which can be used as a photoacid generator or monomer in a chemically amplified photoresist. Another object of the present invention is to provide a polymer containing the above compound as a monomer which can be used for a chemically amplified ruthenium resistant group 2 towel. The chemically amplified photoresist composition has excellent sensitivity &amp; and a higher stability body emission reduction, and also has high resolution and low line edge coarse rotation. In order to achieve the above object, the compound of one aspect of the present invention is represented by the formula (1): 201144265 38535pifl is the Chinese specification of the No. 100119974. There is no slash correction. The revision date is: August 25, 1 曰 in the formula (1) Rn represents any one of a group consisting of a hydrogen atom, a carbon number of 1 to 1 (), a perfluoroalkyl group having 1 to 10 carbon atoms, and an alkoxy group having 1 to 1 carbon number. ; Qi and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. The polymer of another aspect of the invention contains a repeating unit represented by the formula (2): (2) In m(1), Rn, 〜 and 〜 each independently represent a hydrogen atom, a ruthenium group, a perfluoroalkyl group having a carbon number of 1 to 1 (), and a carbon number of 1 to 1 Å. Any one of the ethnic groups selected; α(3) is independent of any one selected from 1 ', sub, and ethnic group towels; and a represents an organic counter ion. ♦ 5 may be a polymer represented by the following formula (3): 11 !4 ' R41 ' R42 is represented by a hydrogen atom. In the formula (3), R R45, R R12, R13, R 46 ' R47 and R48 are each independently represented, R43, R44, and carbon number 1 to 10 1 201144265 38535pifl Amendment date: August 25, 100 is a private group consisting of the alkyl group of the _19974, the fine line of the book, the perfluoroalkyl group having a carbon number of 1 to 10, and the alkoxy group having a carbon number of 1 to 10. Any one selected; Qi and Q2 each independently represent any one selected from the group consisting of a gas atom and a halogen atom; each of r21, r22, and R23 represents a hydrogen atom, a burnt group, a miscellaneous wire, Any one selected from the group consisting of a cycloalkyl group, an indole cycloalkyl group, a +aryl group, a heteroaryl group, and combinations thereof; Α+ represents an organic counter ion; χ represents a polymer unit derived from an olefin monomer; And 1, m, η, 〇, and Ρ are in the following ranges: 〇 &lt;1 young. 4,0&lt;ms0 · 5, (Kn young.5 ' Ο^χο.5 and 〇&lt;pg〇2, 1+m+n+〇+p(一) The above polymer may have a molecular weight distribution of 2, 〇〇〇~1〇〇, 〇〇〇, and may have a molecular weight distribution of 1 to 5. ^Sub-form (7) Amplified photoresist composition The present invention will be described in more detail below. The terms used in the description of the present invention are defined as follows: gas, external specific said sun and moon, no (tetra) atom means a group consisting of fluorine, ', and eight Any one of the selected ones. In addition to the other special definitions, the examples of silks include -Laiyi primary alkyl and tertiary alkyl. Sub or sub-system, otherwise specified in this article, otherwise all compounds and substitutions QI Qiao 201144265 38535pifl Amendment date: August 25, 100 is the Chinese manual No. 100119974. The unmodified u-line correction is substituted or unsubstituted. In this context, substituted means a group of hydrogen atoms which have been composed of the following groups. Any one of the selected ones is replaced by: _ atom, hydroxyl, carboxyl, cyano, nitro Amine group, thio group, methylthio group, alkoxy group, nitrile group, aryl group, epoxy group, yl group, ester group, several groups, thiol group, yl group, alkyl group, perfluoroalkyl group, ring-burning a group, a heterocyclic group, an allyl group, a stupid methyl group, an aryl group, a heteroaryl group, a derivative thereof, and a combination thereof. Unless otherwise specifically stated herein, the word "hetero" means a carbon atom of 1 to 3 A hetero atom selected from the group consisting of N, 〇, s, and p. For example, heteroalkyl means that 丨~3 atoms in the carbon atom of the alkyl group are substituted by a hetero atom. Specific description, otherwise silk means carbon number Busun's two strands; miscellaneous base refers to a carbon number of 1 to 3 of a miscible group; alkoxylate t is an inverse of 1 to 1G of alkoxy; perfluoroalkyl group refers to money 1~10 of perfluorocarbon-producing carbon number 1~1Q of all-wei-oxyl; alkality of "feminine f miscellaneous pure Wei 2~32 miscellaneous; aryl group 曰 = 1~30 aryl; and miscellaneous The aryl group refers to a heteroaryl group having a carbon number of 2 to 3 Å, and is specifically described herein. Otherwise, the example of the cycloalkyl group includes a single id water === an alkyl group. Examples of the ring-shaped base also include King Kong|Niu Bing Base and contain ice a polycyclic ring-based base. The substance or two children, otherwise aryl means a benzene ring-containing side chain connecting line r. Examples include toluene and di-f-benzene, wherein the burning of bi-phenylene: two or more of them The benzene ring is bonded to the fluorenyl group or the heterocyclic ring (PAHne) by a single bond, and two or more benzene rings are bonded to each other by a cyclic oxime group, and naphthalene and anthracene, wherein two or more benzene rings are combined. 201144265 38535pifl _ is No. 100119974# The specification is not underlined. Amendment date: August 25, 100, unless otherwise specified herein. 'Otherwise hydrocarbons are meant to mean unsaturated hydrocarbon compounds containing double bonds, examples of which include, but are not limited to, alkenes, acrylates , styrene, norbornene, indene, anthracene and furan II | The compound of one aspect of the present invention is represented by the following formula (1). In the formula (1), the perfluoro 11 has a /= atom, a carbon number of 1 to 1 G, and a carbon number of 1 to 10, and may preferably be a hydrogen atom or a trifluoromethyl group. And any one selected from the group consisting of alkoxy groups having a carbon number of 1 to 5; the groups A to Qi and Q2 independently represent any one of hydrogen group 2, and may be a group composed of two groups. It is preferably an organic counter ion, which may preferably be represented by the following formula (5) or (6): R2-S (5) wherein in the formula (5), R1 U R3 are independently represented by a burnt group, miscellaneous burn 9 201144265 38535pifl曰期: August 25, 1st, is the selected one of the groups consisting of the base, perfluoroalkyl, fluorenyl, aryl and heteroaryl groups without the underline correction of the Chinese manual of IOOII9974; R4 - hR5 (6) and /15 each independently represent any one selected from the group consisting of an alkyl group, a miscible group, a perfluoroalkyl group, a terephthalate, an aryl group and a heteroaryl group. Any 5(5) may be selected from the group consisting of the following formulas (5_i) to (5_xxii) [S, i] 〇CH3 [5*v] F [5 seven] 口丨 I [5州 [5-xii] 10 201144265 38535pifl is the Chinese manual of the 100119974 without a slash correction. Amendment date: August 25, (10) The formula (6) may be one selected from the group consisting of the following formulas (6-i) to (6-ix): [6-i] [6-iv ] [6-v] 0^| +_0&quot;01 [6-v" [6-viii ] och3 〇 ο [6-丨 H ] [6-V!] [6-ix] 11 201144265 38535pifl Revision date: August 25, 1st The Chinese manual No. 1001199·74 is not underlined. The compound of formula (1) acts as a monomer and a photoacid generator. Under this circumstance, the characteristics of = degree and = can be improved by (4) the following method: adjusting the compound (in) = the secret of the chain, from the tree to the compound (1) as the polymerization of the monomer = the acid space - The polymer of the present invention, which is also suitable for patterning, contains repeating units of the following formula (2). \ΛΛΛ-^ ^-C &lt;ΛΛΛΛΛΠ R42 )^° 〇q2—c' Two s. ;〆/〇〇- +A (2) In the formula (2), Ru, R41 and R42 each independently represent hydrogen Atom, carbon number, 凡 凡 、 、 、 、 、 、 、 、 、 全 全 全 全 全 全 全 全 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 The tender job 5 finds the base, the prime: the child-formed ===== secret is the same as the formula (1) (iv), and the octyl compound is produced by directly polymerizing the compound of the formula (1), which is in the polymer There is a fairy of photoacid generator, which makes the light and the bow. Therefore, it can be produced to make it contain fine Wei high exposure sensitivity = 12 201144265 38535pifl is the 100119974 Chinese manual without a slash correction. This revision date: 1 August 25th and higher stability 'and has a low LER A polymer having a reduced amount of exhaust gas generated after exposure at the same time. The polymer is a multicomponent copolymer and may be a block copolymer, a scrambled copolymer or a graft copolymer. Further, the polymer containing the repeating unit represented by the formula (2) may be a polymer having any one selected from the group consisting of the following repeating units: a repeating unit having an acid labile group, and a hydroxyl group a repeating unit, a repeating unit containing an adhesive group of a lactone ring (adhesive 〇grouP), and a combination thereof. More specifically, the polymer may be a polymer represented by the following formula (3): • + A (3) In the formula (3), Ο R4 and ^12::13, Rl4, R41, R42, R43, R44, R45, R46, number '10: in, stand-up table not by hydrogen atom, carbon Preferably, the group consisting of a group of 1 to 10, a carbon 7 fluorenyl group and a carbon number of 1 to 7 is a hydrogen atom, a trifluoromethyl group, a number of 1 to 5, and a read 1~ In the 5th wire foundation, the person in charge is the one--; (^ and Q2 each independently represent the ^ in the 氲 atomic group, the 骑 较佳 较佳 较佳 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α A+ 13 201144265 38535pifl Revision date: August 25th of the following year is the 1001199·74 Chinese manual. No marking correction 1 m η, 〇 &amp; The following ranges: 0 &lt; M). 4, 0 &lt; m^). 5, 0, 0.5, 0 such as 0.5 and (K_ 2, while coffee +_=1; and X represents a polymer unit derived from an olefin monomer. The dilute hydrocarbon monomer may preferably be any one selected from the group consisting of acrylic vinegar, styrene, norbornene, known, dangerous "fudanedione and its derivatives. X may preferably be of the following formula (3_a) ~ (3_Heart - indicates the aggregation unit: In the formulae (3-a) to (3-f), Rl5, R49 and R50 each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a perfluoroalkyl group having 1 to 10 carbon atoms, and a carbon number. Any one selected among the oxygen-burning A groups of the diterpenoids, and each of them may preferably be selected from the group consisting of a gas original diyl group, a carbon number of 1 to 5 alkyl groups, and a carbon number of 1 to 5 alkoxy groups. Rm and R32 each independently represent any one selected from the group consisting of a halogen atom, a hydroxyl group, a cyano group, a slow group, a nitrile group, a chelating group, an epoxy group, a nitro group, an amine group, Thio, sulfonyl, alkyl, alkoxy, perfluoroalkoxy, hydroxyalkyl, cycloalkyl, heterocycloalkyl, aryl, heteroaryl, COOR' and COR', wherein R' represents From the alkyl group, perfluorinated group, ring-burning 1, 14 201144265 38535pifl to the Chinese manual of No. 100119974, no picture of the dirty revision. Amendment date: August 25, 100 aryl and ring aryl group a represents an integer of 0 to 5, b. 〇' d represents an integer of ～4, and e represents 〇~3: „ an integer of 〜8, in the formula (3), and 卩 denotes an integer of 0 to 3. R21 , R22 and R23 each independently represent a base Any one selected from the group consisting of a cyclodecyl group, a heterocyclic group, a H ^ $ group, and a miscellaneous group, and preferably a combination of the selected groups: ', , and Formula (3-i)~(3-ix) , (卩33)g (3-0 〇 (called ‘ 〇^°(3_iV), 々(3 ., (3-νι) (3-ix) In the formulas (3-i) to (3-ix), the output = face, group J base, ship base, coffee base = base, whole soil, methylthio group, ether group and oxime Oxygen, and preferably ^, ra, amine group independently selected from the group consisting of R3 5 vocal: hydrogen source 15 201144265 38535pifl for the first penny n Chinese no text corrections this revision date: __The carbon number of 1 to 6, the carbon number of 1 to 6, the total number of carbon number 4, the total number of carbon atoms 1 to 4, the alkyl group, the carbon group , dentate atom, thiol, cyano, nitro, amine, thio, methylthio and methoxy. The symbol g represents an integer of 0 to 9, h represents an integer of 〇~9, i represents an integer of 〇~5, where j represents an integer of G15, k represents an integer of 〇15, and q represents an integer of 0~17. And r represents an integer of 〇~丨丨. The polymer may preferably be a polymer represented by the following formula (4): R47 R14 \ / /W'C~〇 JVWW ftJWV1 1 lr 公)=〇. m 0' only 23 R21 (4) Rl4, R4I + R42' R43 R22, R23 R In the formula (4), Ru, Ri2, and R] are the same as those described in the formula (3), and therefore, b is not an integer of 0 to 5, And ° represents an integer from 0 to 8. 1 to 10, wherein each of U R49 independently represents any one selected from the group consisting of a hydrogen atom, a carbon number-% carbon number of 1 to 1 G perfluorodecyl group, and a carbon number of 1 to a group of alkoxy groups == Preferably, any one selected from the group consisting of η A atoms, difluoro fluorenyl groups, alkyl groups having 1 to 5 carbon atoms, and carbon number 1 to 5 is used. A = (4) towel 'R3i' indicates the dentate atom selected from the group consisting of the following, the thiol group, the cyano group, the slow group, the nitrile group, the group, and the ring 16 201144265 38535pifl is the date of revision of the Chinese manual No. 100119974 :1 August 25, oxy, nitrate, amide, amine, thio, methylthioalkoxy, minus group, base, heterocyclic, aryl, perfluoro and COR, Wherein R 丨 represents a group consisting of alkaloids, octazones, anthracene groups, COOR oximes and cyclic aryl groups; "= group, cycloalkyl group, aryl group 〇h may preferably be composed of the following group An alkyl group having a carbon number of 1 to 6 and an alkoxy group having 1 to 6 carbon atoms, either: a base, a carbon number of 1 to 4, a decyloxy group, a carbon number of 2, a sulfonium group, a thiol group, and a cyano group. The nitro group, the amine group, the thio group and the phenyl group are preferably in the group consisting of a hydrogen atom and the following formula (4): two or two more ΌΗ =〇〇(3-χ) Λ~ when using The potassium benzoate polymer ruthenium has a == greater than the aromatic compound and the carbon number of the cyclic olefin introduced into the main chain can be highly improved and completely vaporized and partially retained in the photoresist film. This ==== the fluidity is improved, and therefore any of the polymers selected in the figure can be in the group of the formula (4-a)~(4-1). 17 201144265 38535pifl is the 100119119 Line revision date of this amendment: (10) August 25 (4-a) (4-b) (4-c) (4-d) (4-e) (4-f) 18 201144265 38535pifl is the Chinese manual of No. 100119974 without a slash correction. Amendment date: 1〇〇 August 25th (4-g) (4-h) (4-i) (4-j) (4-k) (4-1). 19 201144265 38535pifl Revision date: August 25, 100 is the Chinese manual No. 100119974. There is no slash correction. In the formulas (4-a) to (4-1), the symbols m, n, 〇 &amp; p are respectively Within the following range: 〇 <匕〇4, 0&lt;〇^5 ' 0^0.5 ' 〇如〇.5 and 〇&lt;_ 2, at the same time l+m+n+〇+p=i; A+ is not organic ion Since its definition is the same as that described for A+ in the formula (1), further description will not be repeated. The polymer containing the heavy freshener of formula (2) preferably has a weight average molecular weight of 2, _~100,000 relative to the polystyrene standard measured by smear permeation chromatography (GPC); f 'and 丨~ The molecular weight distribution of 5, and more preferably has a weight average molecular weight of 3,000 to 30,000 and a molecular weight distribution of j 5 〇 3 . If the weight average molecular weight f is greater than _, _, it will be polymerized in the photoresist composition, the simplicity of the polymer may be poor, and the edge roughness may be poor. If the weight average molecular weight is less than 2, _, the mechanical strength of the resin is poor, and the pattern may not be satisfactorily formed (pattern rupture. Further, if the molecular weight distribution is more than 5, the line edge coarseness may be poor. Therefore, when When the weight average molecular weight and the molecular weight distribution are in the above range, the photoresist composition exhibits appropriate characteristics in terms of developability, coatability, and heat resistance. The compound represented by the formula (1) can be used. The compound represented by the formula (1) can be produced by the method of the following step: a first step of reacting a compound represented by the following formula (7) with a compound represented by the following formula (8), And a second step of subjecting the reaction product produced in the first step to a substitution reaction of the compound represented by the following formula (9). 20 201144265 38535pifl is the temple 119974 Chinese _埘__正本^ Revision date: 1 to August 25 day A+Z- (9). In the formulas (7) to (9), any one selected from the group consisting of HL^HLl+ and Na+*K+. Any one selected from the group consisting of (N(C2F5)2)- (N(c4p9)2) . (C(CF3)3)_ ; ^ (C(C4F,3)- &gt; F- , Cl- , Br- ^ !. , BF4- , AsP^p;;^ The definitions of ' Rii, Qi and Q2 are the same as those for the formula = respectively, so the description will not be repeated. The upper step of the ether: the second one can be carried out in a solvent and can be used in vinegar. The two are used as a solvent. Preferably, dichloroanthracene, gas, acetonitrile, toluene, benzene, 1,4-dioxane and the like are used. The decane is catalyzed in the presence of an inert catalyst, and The test 蜊j is a group consisting of diethylamine, diethylamine, pyridine, di rww::different, and combinations thereof: when the reaction is carried out in the presence of an inert catalyst, Between the inches, the conversion ratio can be increased, and the side reaction can be reduced. The compound represented by the formula (8) can be obtained by the following formula (10): 21 201144265 38535pifl Revision date: August 25, 100 is the 100119974 Chinese manual. Marking correction book M+ - 0-SC ' II 0 〇 2 〇—r6 (10) In the formula (10), M+ represents any one selected from the group consisting of Li+, Na+, and K+; and R6 represents any one selected from the group consisting of: a nitrogen atom, The base of the carbon number U), and the base of the carbon number of the carbon atom, which is replaced by a halogen atom, and may be any one selected from the group consisting of the towns: hydrogen Atom, a carbon number of K5, a trimethyl group, a trimethyl group, a tribromoindenyl group and a triiodomethyl group; and (^ and Q2 are as defined as those described for the compound represented by the formula (1), respectively 'Therefore, the further description of the compound represented by the formula (10) is carried out. The process of the compound represented by the formula (8) may specifically comprise the step of dissolving the compound of the formula (8) in tetrahydrofuran and in a solvent. The reducing agent is slowly added dropwise to the solution ten in an ice bath; after the dropwise addition, the temperature is raised to 4 〇~1 〇〇 to prepare a liquid of the reaction mixture; the reaction mixture is allowed to flow under stirring Reaction; then terminating the reaction of the liquid of the reaction mixture; removing the solvent; and reacting the reaction product For the method of crystallization, any crystallization method conventionally used may be used, but in particular, a method comprising the steps of: acid-resolving the solvent with a strong acid to pH ρ 5 to 6; Subsequently, an alcohol is added to make the obtained concentrate into a slurry; the slurry is filtered, and the filtrate is washed again with hexane, followed by concentrating the filtrate again; and the product is crystallized from diethyl ether. The polymer containing the repeating unit of the formula (2) It is customary to produce a polymer 22 201144265 38535pifl ^_9974 ___^ Fine series coffee day 3 = Ϊ 'But it is better to use free radical polymerization. The free radical polymerization is used to reduce diisobutyronitrile (Α_), benzoyl peroxide Any one selected from the group consisting of decyl lauryl, azobisisohexanenitrile, azobisisovaleronitrile, ruthenium ruthenium and combinations thereof - the present "sputum sputum polymerization, suspension polymerization, Ο Ο use benzene, 曱 曱The polymerized solvent may be one or more selected from the group consisting of a friend, a book, a halogenated version, an ether, a tetrahydrofuran, a 1,2-, a solvent, an ether, a lactone, a ketone, and a decylamine. Inverse The unreacted monomer field in the mixture liquid can be borrowed, and the method for removing these monomers and by-products is conventionally used to remove the teeth, and the rutting can be removed by a precipitation method using a solvent. The chemically amplified photoresist composition of the present invention comprises a polymer comprising: a complex unit of m, wherein the amount of the monomer represented by the formula (1) "the total solid content of the polymer of two 100 11 parts may be 〇. 5~15 weight = If the amount of the monomer represented by the formula (1) is within the above range, better sensitivity and higher stability can be obtained, and the amount of the same rail body can be reduced. The photoresist composition can be included with respect to The total amount of the photo-performed product is 3 wt% ^ and is more than 5 wt% m of the smoke-containing heavy fresh polymer. When the content of the right polymer is 3 wt% or less, the effect of containing the polymer does not necessarily appear. The photoresist composition may contain, in addition to the polymer, (c) a constituent element such as an additive or a solvent constituting the photoresist group. The photoresist composition of the repeating unit of the formula (2) can be used for pattern formation. The pattern forming method comprises: applying a photoresist composition to the substrate to heat the resist composition of the sheet And the high energy 23 201144265 38535pifl is the 100119119 Chinese manual without a slash correction. The date of revision: the step of exposing the photoresist composition by radiation on August 25, 100; and the step of developing the photoresist composition using a developing solution . Higher energy ray in the range of 13.5 to 250 nm is preferred because it increases resolution while reducing LER. When the novel compound of the present invention and the polymer containing the same are used in the chemically amplified photoresist composition, the photoresist composition can have good sensitivity and high stability while reducing gas emissions, and can have The souther resolution and the lower line edge coarseness. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention can be implemented in various different embodiments, and is not limited to the examples described below. Synthesis of Compound Example 1) Synthesis of sodium difluorohydroxypropane sulfonate 83 g of sodium 3,3-difluorosulfopropionate in an ice bath was dissolved in 160 ml of methanol and 1.2 liters of tetrahydroanthracene ( In THF), 44 g of sodium borohydride was slowly added dropwise to the solution. After completion of the dropwise addition, the reaction mixture was removed from the ice bath and heated to 60 °C. The reaction mixture was stirred at the same temperature for about 4 hours. The liquid of the reaction mixture thus disturbed is quenched by steaming, and the solvent is removed. The reaction mixture obtained after removing the solvent was again dissolved in distilled water, and the resulting solution was acidified to pH 5-6 with / HCl. The acidified reaction mixture was concentrated again, and methanol was added thereto to obtain a slurry. The slurry was filtered to remove the inorganic salt, and the filtrate was washed twice with hexane. 24 201144265 38535pifl Revision date: August 25, 1st is the Chinese manual No. 100119974. There is no slash correction. The sterol layer is concentrated again. Then, it is crystallized using diethyl ether. The white solid obtained by crystallization was dried in vacuo, and the structure of the solid was determined by iH_NMR. Thus, 68.5 g (yield 95%) of difluoropyridylpyruvate sodium salt represented by the formula [A] in the following reaction scheme (1) (3_ethoxy-1,1-difluoro-) was obtained. 3-sided oxypropyl sulfonate sodium sulfonate). H-NMR (gas-d3, internal standard: tetradecyl sulphate): 3 (ppm) 3 3 (t, 2H), 4.58-4.68 (t, 2H).反应 [Reaction Scheme 1] Na〇trx〇Et NaBH, THF, MeOH Ο II Na〇{, c^^\^〇H 0 f2 EtOH [A] wherein in Reaction Scheme 1, Me represents a thiol group, and Et represents Ethyl. 2) Synthesis of 2 methyl propyl known @文_2,2-一气-2-石黄propyl propyl salt, 68 g is produced in the synthesis example of the compound 在) in the reaction scheme (1) by the formula [A] Indicates sodium difluorohydroxypropane sulfonate (3-ethoxydifluoro-3-oxopropane-sodium sulfonate) and 54 6 ml of decyl propylene chloride with 500 ml of dichloromethane (MC) Mix and stir the resulting mixture. Subsequently, 3.2 g of hydrazine, hydrazine, dimethylaminopyridine (DMAP) and 50 mg of a polymerization inhibitor (hydroquinone monoterpene ether were added to the mixture to mix the resulting mixture at 15 to 25 ° C. at 15 to 25 Under the 〇c, 104 ml of triethylamine (Et3N) placed in a dropping funnel was slowly added dropwise to the mixture to prepare a reaction mixture. The reaction mixture liquid was stirred at 15 to 25 ° C for 3 citrus, followed by The degree of reaction was determined by NMR, and the reaction was terminated. 25 201144265 is the Chinese manual of the 1st to 119974 without a slash correction. The date of this revision: August 25, 100, after the reaction of the reaction mixture is terminated, the distillation is carried out under reduced pressure. Dichloromethane was used as a reaction solvent, and 3 ml of distilled water was added thereto. Subsequently, potassium carbonate was added to the reaction mixture to obtain a saturated solution. After stirring the saturated solution for 2 hours, the solid thus produced was passed through. 81 g (yield: 86%) of 2-mercapto-acrylic acid 2,2-difluoro-2-retentyl-propyl ester sodium salt represented by the formula [B] in the reaction scheme 2 (丨, 1_) Difluoro_3_(methylpropoxy)propane-1-sulfonate sodium. Determination of salt by 1H-NMR Structure W-NMR (DMSO, internal standard: tetramethyl decane): 3 (ρρηι) 1.91 (s, 3H), 3.3 (t, 2H), 4.57-4.67 (t, 2H), 5.77 (s, 1H) , 6.11 (s, lH)〇 [Reaction Scheme 2] 1) Et3N, 2) DMAP 3) MEHQ Na〇-S-CF2CH2CH20 〇 NaO-S—CF 2 CH 2 CH 2 OH + 6 [B] wherein in Reaction Scheme 2, Et represents an ethyl group. 3) Synthesis of 2-(2-difluoro-2-sulfopropyl 2-methacrylate) diphenylmercaptophenyl sulfonium salt 31 g of 2_mercaptoacrylic acid produced in Synthesis Example 2) of the compound 2,2-difluoro-2-sulfopropyl ester sodium salt (丨, ^difluoro_3_(decyl propylene oxime) propyl ketone-1-benzoate) and 35 g in the following reaction scheme 3 The formula [C] represents the abbreviated phenyl fluorene trifluorodecane sulfonium salt dissolved in 3 ml of di-methane (MC) and 300 ml of distilled water to prepare a reaction mixture, and the reaction mixture is stirred under vigorous stirring. A two-layer reaction was carried out for 3 hours. After the ingredient is mixed, an aliquot of the organic layer (aliqU〇t) is obtained as 26 201144265 38535pifl. Amendment date: August 25, 100 is the 100119974 Chinese manual. No slash correction. By 19F-NMR test The extent of the reaction, and the reaction was terminated. After the reaction was terminated, the organic layer of the reaction mixture was collected, and the solvent was removed. The organic layer was washed with dioxane (as a good solvent) and hexane (as a poor solvent), and the solvent was removed to obtain a crystal. The crystals thus obtained were dried under reduced pressure to give 40 g (yield: 96%) of 2- methacrylic acid-2,2-difluoro-2- represented by the formula [D] in the following Reaction Scheme 3. Sulfopropyl diphenyl nonylphenyl sulfonium salt. The structure of the salt is determined by ih_nmr. W-NMR (chloroform-d3, internal standard: tetramethyl fluorene): external (iv) 195 (s, 3H), 2.43 (s, 3H), 3.3 (t, 2H), 4.82 (t, 2H), 5.60 (s , 1H), 6.22 (s, 1H), 7.43-7.80 (m, 14H). [Reaction Scheme 3] Synthesis Example of Polymer (Example 1) As a monomer for polymerization, 13 g of 2-mercapto-2-adamantyl acrylate, 8.4 g of y-butyrolactone decyl acrylate, and 11.6 g of decyl acrylate were used. 3-hydroxy-1-adamantyl ester and 1 g of 2-mercaptoacrylic acid 2,2-difluoro-2-sulfopropyl diphenyl nonylphenyl represented by the formula [D] in the above Reaction Scheme 3 The onium salt was dissolved in 58 g of 1,2-dichloroethane, thereby preparing a monomer mixture. 27 201144265 38535pifl Revision date: _August 25th is the 100119974 Chinese manual without a slash correction 3.7 grams of norbornene; I: Greek, 2.5 grams of azobisisobutyronitrile (aibn) (as a polymerization The starting agent) and 117 g of 1,2-dichloroethane (as a polymerization solvent) were added to a 250-liter flask to provide a reaction bath, and nitrogen gas was introduced into the reaction bath. The mixture was stirred for 1 hour while maintaining the temperature at 15 to 25 °C. When the temperature of the reaction bath was 65 ° C, the above monomer mixture was slowly added dropwise to the reaction bath over 1 hour to prepare a reaction mixture, and the reaction mixture was allowed to react for 16 hours. After completion of the polymerization, the reaction mixture was cooled to 15 to 25 ° C, and the reaction product was precipitated with hexane, and the precipitate was filtered. The precipitate was washed several times with the same solvent as during the filtration process, and the crystals thus obtained were dried under reduced pressure to obtain 37 g (yield: 79%) of the polymer of the formula 1 represented by the formula (11). . In the polymer of the example represented by the following formula (11), 1 = 0.24, m = 0.25, η = 0.30, 〇 = 0.20 and ρ = 0.11. The polymer of Example 1 had a polystyrene-equivalent weight average molecular weight (Mw) of 1,190 and a molecular weight distribution of 1.57 (ratio of weight average molecular weight to number average molecular weight, Mw/Mn). (Example 2) Poly 28 was produced in the same manner as in Example 1 except that the individual amounts of the monomers used for the polymerization were adjusted to change the values of m, η ' 〇 and p in the formula (11). Chinese manual without slash correction This revision period: on August 25, 100, m, n ' 〇 and p value as a compound. In the formula (11) of the polymer of Example 2, the following: 1 = 0.24, m = 0.25 'n = 〇30, 〇: (Example 3) In addition to the individual amount of the monomer of ^, ^, &quot; The value of 卩 is outside the 'with instance ^): compound. In the formula (11) of the polymer of Example 3, the manner of the 丨 :: ^ water under: (d). 3 〇, (4); and the value of P such as (Example 4) 〇]6 and (4).05. The polymer was prepared in the same manner as in Example 1 except that the number of monomers used for the polymerization was adjusted by using 1 to change the values of ^, &quot; and 13 in the formula (11). The polymer of the formula 4 (11) has the values of im, η, 0, and ρ as follows: &quot;· m=a25, (iv)·30, (iv) 14 and (iv) 〇7, value 々 (comparative example) Monomer for polymerization, mixing 100 g of methyl acetoacetate 2 - methyl-2-gold (4), 7.3 g of y · butyl (tetra) methacrylic acid g and guai gram methacrylic acid 3-hydroxy- 1-adamantyl ester, the mixture was dissolved in 82 g of i,4 dioxin to prepare a monomer mixture. The bath temperature was slowly raised to 65 〇c. 3.7 g of norbornene, 2.5 g of azobisisobutyronitrile (AIBN) (as a polymerization initiator) and 117 g of 1,2-diethylene b (as a polymerization solvent) were added to a 250 ml flask to provide a reaction. Bath and introduce nitrogen into the reaction bath. The mixture was stirred for 1 hour while maintaining the temperature at 15 to 25 °C. When the temperature of the reaction bath was 65 ° C, the above monomer mixture was slowly added dropwise to the reaction bath over 1 hour to prepare a reaction mixture, and the reaction mixture was allowed to react for 16 hours. After the completion of the polymerization reaction, the reaction is mixed. 29 201144265 38535pifl is the Chinese manual of No. 100119974. There is no slash correction. The date of revision: The date of August 100 is cooled to I5~25. (:, using the appearance of the reaction product to smear, and then sinking. The precipitate was washed several times with the same solvent as during the filtration process, and the resulting crystal was dried under reduced pressure to obtain 25 g (yield : 91% The polymer represented by the following formula (12): '^ is given by the following formula (12), i = 〇.28, m = 〇24, n = 〇24 and 〇 == 〇 &amp; The polymer represented has a polystyrene tube weight average molecular weight (Mw) of 1/78 Torr and a molecular weight distribution of M68 (Mw/Mn^). Preparation of photoresist and evaluation of properties (Example 1) 100 weights of the polymer of Example 1 and 〇.75 weight of tetrahydrogen hydroxide as an additive additive were dissolved in 1,000 parts by weight of propylene glycol methyl ether. It is known that the solution is filtered with a 0.2 micron membrane filter to prepare a photoresist solution.光 A photoresist was applied to the substrate using a spinner and dried at 110 ° C to form a film having a thickness of 0.2 μm. The film thus formed was exposed using an ArF excimer laser (lens numerical aperture: 〇, 75), and the film was heat-treated at 12 ° C for 90 seconds. The heat-treated substrate was developed with a 2.38 wt% t ίL solution. Seconds and washing H Λ this is cut into a resist pattern on the substrate. C example 2~4) 30 201144265 38535pifl is the Chinese manual of No. 100119974 without a slash correction. The 7F mouth repair period: August 25, 100, except for the synthesis in the polymer synthesis examples 2 to 4 Q heavy halves of each polymer instead of the preparation of photoresist and the evaluation of the characteristics of the first layer of weight = part of the polymer, in the form of the photoresist and the characteristics of the evaluation of the first example to form a photoresist pattern, and Evaluate the characteristics of the photoresist pattern. (Comparative Examples 1 to 3) The same procedure as in Example 1 in which the photoresist and the characteristics were evaluated was produced except that the polymer of the comparative example represented by the above formula (12) was used to produce a photoresist having the composition shown in the following Table 1. Forming a photoresist pattern and evaluating the photoresist pattern of Teko [Table 1] ^ Q content Heavy and heavy parts) Bioactive agent: pill gas butan acid triphenyl spar (2) alkaline additive: hydroquinone tetraammonium The resolution of νΓ5 and LER* of 1 to 3 were evaluated in the faces of Examples 1 to 4 and Comparative Examples, and the results are shown in Table 2 below. It will be able to form a 1:1 line width after development, and the exposure amount of the optimum exposure B light amount is defined as the optimum exposure pattern is defined as sensitivity. The minimum resolution at this time is based on: Electron microscopy (CD S measurement LER, temple, and (for example, 1 (very poor), 2 (poor), 3 (medium), 4 31 201144265 38535pifl _ is the Chinese manual for IOOII9974 without a slash correction (good) and 5 (excellent) for the evaluation [Table 2] Date of revision: 1 August 25 results. Example 1 Example 2 - --------^15 ~ __--- IS? kg (nano) 1 70 ---- _ LER 4 . Example 3 _^ - 70 4 Example 4 -IIIji----- ~~ 90 4 Comparative Example 1 .____ΙΙΙΓΐ9~~·~~~—— 70 5 Comparative Example 2 ΖΖΓΓπ—----- 90 2 Comparative Example 3 ~~~~--- 80 3 ^~~---- - 90 3 According to Table 2, the examples ι~4 phase 4 generally show better resolutions 2 and 1: better resolution than the comparison examples i~3. Especially in the case of LER's case 1 to 4, compared to comparison The examples show much better results. # Accordingly, the preferred embodiments of the present invention have been described in detail, but the scope of the present invention is not intended to be limited thereto, and can be used by a general practitioner as in the following claims. Various modifications to the basic concepts of the invention defined And the improvement is also included in the scope of the present invention. 32 201144265 38535pifl is the Chinese manual of No. 100119974 without a slash correction. The date of this amendment: (10) The invention patent specification of August 25 (the format, order and bold type of this manual) Do not change the '※ mark part please do not fill in. ※ ※Application number: I00119 9 7 4 ※Application deadline: ※IPC classification: 1. Invention name: (Chinese / English) Compound, polymer containing the compound and containing Chemically amplified photoresist composition of polymer 0 COMPOUND, POLYMER COMPRISING THE COMPOUND, AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE POLYMER 2. SUMMARY OF THE INVENTION The present invention provides a compound, a polymer containing the same, and a polymer comprising the same A chemically amplified resist composition, and a compound represented by the following formula G) and a polymer containing the compound as a monomer are provided. In the formula (1), the definitions of Rn, Qi, Q2 and A+ are as described in the specification. When the compound and a polymer containing the compound as a monomer are used in the chemically amplified photoresist composition, the photoresist composition can have excellent sensitivity. 1 201144265 38535pifl Revision date: August 25, 100 is 100119974 The Chinese manual has no slash correction and high stability while reducing gas emissions, and can have higher resolution and lower line edge roughness. 3. The invention includes a compound, a polymer containing this compound, and a chemically amplified resist composition including the polymer, and a compound represented by the following formula (1) and a polymer containing the compound as a monomer are provided. 0- +A (1) in the formula (1), the definitions of Rn, Qi, Q2 and A+ are as described in the specification. When the compound and a polymer containing this compound as a monomer are used in a chemically amplified resist composition , the resist composition may have excellent sensitivity and higher stability with a reduced amount of gas discharge, and may have higher resolution and lower line-edge-roughness. 201144265 38535pifl is the Chinese manual of No. 100119974 without a slash correction. Amendment date: 1〇 August 25, the following year, the scope of application for patents: 1. A compound, represented by the following formula (1): ^11 In the formula (1), Rn is selected from the group consisting of a hydrogen atom, a carbon number of 1 to 10, a perfluoroalkyl group having a number of 1 to 10, and an alkoxy group having 1 to 10 carbon atoms. Either (^ and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. 2. A polymer, including represented by the following formula (2) Repeat unit: In the formula (2), 33 (2) 201144265 38535pifl Revision period: August 25, 100 is the 100119974 Chinese manual without a slash correction. Rn, 1^41 and R_42 each independently represent a hydrogen atom, carbon Any one selected from the group consisting of a number of alkyl groups, a perfluoroalkyl group having 1 to 10 carbon atoms, and an alkoxy group having a carbon number of 川~chuan; Q! and Q2 each independently represent a hydrogen atom and a dentate atom; Any one of the selected ethnic groups; and A+ represents an organic counter ion. 3: The polymer according to claim 2, which is represented by the following formula (3): Wherein in the formula (3), R.Rn, R13, R14, R41, r42, R43, R44, &amp;, 47 and R48 each independently represent a hydrogen atom, an alkyl group having a carbon number of 〇~1〇, and an alkyl group. The job is 1~1G, and it is composed of the cypress material and the (4) materials. , 22 and I3 each independently represent a hydrogen atom, an alkyl group, a fresh group, an aryl group, a heteroaryl group, and a combination thereof: 34 201144265 38535pifl Revision date: August 25, 1 No. 100119974 Chinese specification without scribe correction A+ represents an organic counter ion; X represents a polymer unit derived from an olefin monomer; and symbols 1, m, η, 〇 and p are respectively in the following ranges: 〇 &lt; 匕〇 4, 0&lt;mS0.5 ' 0%〇.5 ' 〇幺0幺〇5 and 〇2, while 1+m+n+〇+p=1. 4. The polymer of claim 3, which has a weight average molecular weight of from 2, 100 to 10,000, and a molecular weight distribution of from 5 to 5. 5. A chemically amplified resist composition comprising a polymer comprising a repeating unit represented by the following formula (2): R 42 41 F?ii \ / 11 &gt; = 0 〇 (7) wherein, in the formula (2), R&quot;, the ruler 41 and R42 each independently represent a hydrogen atom, a carbon number of 1 to 1 Å, a perfluoroalkyl group having a carbon number of 1 to fluorene, and a carbon number of 1 to 10; Any one selected from the group consisting of alkoxy groups; Qi and Q2 each independently represent any one selected from the group consisting of a hydrogen atom and a halogen atom; and A+ represents an organic counter ion. 35 201144265 38535pifl For the Chinese manual No. 100119974, there is no slash correction. The date of this amendment is: August 25, 1 四 4. Designated representative map: (1) The designated representative figure of the case: None (2) The symbol of the representative figure Brief Description: 5. If there is a chemical formula in this case, please reveal the chemical i that best shows the invention features. 3