TW201144264A - Photoacid generator, method for manufacturing the same, and resist composition comprising the same - Google Patents
Photoacid generator, method for manufacturing the same, and resist composition comprising the same Download PDFInfo
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- TW201144264A TW201144264A TW100118860A TW100118860A TW201144264A TW 201144264 A TW201144264 A TW 201144264A TW 100118860 A TW100118860 A TW 100118860A TW 100118860 A TW100118860 A TW 100118860A TW 201144264 A TW201144264 A TW 201144264A
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
- C07C309/09—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Abstract
Description
201144264 38471pif 六、發明說明: 【發明所屬之技術領域】 本發明是關於一種光酸產生劑及其製造方法,以及含 有光酸產生劑的光阻組合物。更特定言之,本發明是關於 一種光酸產生劑,其能夠在曝光時產生酸,所述酸具有低 擴散率(diffusion rate)、短擴散距離,且展現適當酸度以 使線兄粗糙度(line width roughness ; LWR)特徵可得以 改良,並且其在製程中使用的諸如純水之溶劑中的溶離可 受控制,及製造光酸產生劑的方法,以及含有光酸產生劑 的光阻組合物。 【先前技術】 隨著使用光微影術變化之微處理方法更新換代,需要 具有較高解析度之光阻,且_於此等需要,已開發出化 學增幅型光阻。此類化學·型光阻組合物(如咖 amplified resist composition)含有光酸產生劑。 化學增幅型光阻組合物中之光酸產生劑為重要要 素j其在解析度、LWR、靈敏度及其類似㈣方面賦予化 學增幅型光阻以及光阻組合物以極佳性f。因此, 行對各種類型光酸產生劑之研究^ 的化學增㈣触組合物。 更1備具有適當性質 特,言之,彼等用作光酸產生劑以改良酸 類錄質的化合物已針對陽離進i f 度之修飾及實驗,其中崎性料 厦及靈敏度之_ —_,在t^、, 201144264 38471pif 藉由修飾光酸產生劑之陰離子部分而改良化學增幅型光阻 之性質的研究仍不充分。 基於報導陰離子部分可比陽離子部分學 性質施加更大影響的實驗資料,其實質上改 光阻組合物之性質,新發明是關於近來已實現之光酸產生 劑的陰離子部分。此外,對可調節滲透性同時降低酸擴散 率之光酸產生劑的需求曰益增加。 此外,近來化學增幅型光阻之光源需要比通常使用之 g線或i線區域甚至更短之波長,且因此正對使用遠紫外 輻射、KrF準分子雷射光、ArF準分子雷射光、極紫外(EUV) 幸田射、X射線及電子束之微影術進行研究。特定言之,因 為在浸沒式(immersion) ArF方法中使用純水進行曝光製 程,所以用於此類浸沒式ArF方法中之光阻組合物需要具 有以下特徵:光阻組合物中所含之光酸產生劑或自此光酸 產生劑產生之酸不會溶離至純水中。 【發明内容】 本發明之一目標為提供一種光酸產生劑,其能夠在曝 光時產生酸,所述酸具有低擴散率、短擴散距離,且展現 適當酸度以使線寬粗糙度(LWR)特徵可得以改良,並且 其在製程中使用的諸如純水之溶劑中的溶離可受控制。 為實現上述目標,根據本發明之一實施例,提供由下 式1表示之光酸產生劑: 6 201144264 / ιριι [式1]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoacid generator, a method for producing the same, and a photoresist composition containing a photoacid generator. More particularly, the present invention relates to a photoacid generator capable of generating an acid upon exposure, the acid having a low diffusion rate, a short diffusion distance, and exhibiting an appropriate acidity to make the line brother roughness ( Line width roughness ; LWR) characteristics can be improved, and the dissolution in a solvent such as pure water used in the process can be controlled, and a method for producing a photoacid generator, and a photoresist composition containing a photoacid generator . [Prior Art] With the replacement of the micro-processing method using photolithography, a photoresist having a higher resolution is required, and a chemical-amplified photoresist has been developed. Such a chemical type resist composition (e.g., a coffee resist resist composition) contains a photoacid generator. The photoacid generator in the chemically amplified photoresist composition is an important element which imparts excellent sensitivity to the chemically amplified photoresist and the photoresist composition in terms of resolution, LWR, sensitivity and the like (four). Therefore, a chemically enhanced (four) touch composition for the study of various types of photoacid generators. In addition, they have appropriate properties. In other words, they have been used as photoacid generators to improve the acid recording. The compounds have been modified and tested for cations, and the sensibility and sensitivity of ___, In t^,, 201144264 38471pif, studies to improve the properties of chemically amplified photoresists by modifying the anion portion of the photoacid generator are still insufficient. Based on the experimental data reporting that the anionic moiety can exert a greater influence than the cationic partial properties, which substantially alters the properties of the photoresist composition, the new invention relates to the anionic portion of the recently implemented photoacid generator. In addition, the demand for photoacid generators which can adjust the permeability while reducing the acid diffusion rate increases. In addition, recent sources of chemically amplified photoresists require even shorter wavelengths than the g-line or i-line regions that are commonly used, and are therefore directed to the use of extreme ultraviolet radiation, KrF excimer laser light, ArF excimer laser light, and extreme ultraviolet light. (EUV) Kodak, X-ray and electron beam lithography were studied. In particular, since the exposure process is performed using pure water in the immersion ArF method, the photoresist composition used in such an immersion ArF method needs to have the following characteristics: light contained in the photoresist composition The acid generator or the acid produced from the photoacid generator does not dissolve into pure water. SUMMARY OF THE INVENTION An object of the present invention is to provide a photoacid generator capable of generating an acid upon exposure, the acid having a low diffusivity, a short diffusion distance, and exhibiting an appropriate acidity to achieve a line width roughness (LWR) The characteristics can be improved, and the dissolution in a solvent such as pure water used in the process can be controlled. In order to achieve the above object, according to an embodiment of the present invention, a photoacid generator represented by the following formula 1 is provided: 6 201144264 / ιριι [Formula 1]
Μ ?1 H2Μ ?1 H2
A+H’C 〇 q2 在式1中,Y表示由ϋ至30個碳原子之環烧基及 具有3至30個碳原子之壞稀基所構成的族群中選出之任一 者;QA Q2各自獨立地表示卣素原子;χ表示由下列基 團所構成的族群中選出之任一者:烷二基、婦二基、NR,、 S、Ο、CO以及其組合,RI表不由氫原子及烷基所構成的 族群中選出之任一者;η表示0至5之整數;且A+表示有 機相對離子。 根據本發明之另一實施例’提供製造光酸產生劑的方 法,其包括第一步驟:將由下式8表示之化合物溶於溶劑 中,且使溶液與還原劑反應以獲得由下式6表示之化合 物;第二步驟:使由下式7表示之化合物與由下式6表示 之化合物在鹼性催化劑存在下反應以獲得由下式4表示之 化合物;以及第三步驟:使由下式4表示之化合物與由下 式5表示之化合物進行取代反應,且藉此獲得由下式1表 不之化合物。 7 201144264 38471pif [式8] M+ O 〇2 [式6] o m. -〇441hoh \\ I O 〇2 [式7] 〇5~~fx)-A+H'C 〇q2 In Formula 1, Y represents any one selected from the group consisting of a fluorene group of 30 to 30 carbon atoms and a bad group having 3 to 30 carbon atoms; QA Q2 Each independently represents a halogen atom; χ represents any one selected from the group consisting of alkanediyl, banyl, NR, S, hydrazine, CO, and combinations thereof, and RI is not represented by a hydrogen atom. And any one selected from the group consisting of alkyl groups; η represents an integer from 0 to 5; and A+ represents an organic relative ion. According to another embodiment of the present invention, there is provided a method of producing a photoacid generator comprising the first step of dissolving a compound represented by the following formula 8 in a solvent, and reacting the solution with a reducing agent to obtain a formula 6 a compound; a second step of reacting a compound represented by the following formula 7 with a compound represented by the following formula 6 in the presence of a basic catalyst to obtain a compound represented by the following formula 4; and a third step of: The compound shown is subjected to a substitution reaction with a compound represented by the following formula 5, and thereby a compound represented by the following formula 1 is obtained. 7 201144264 38471pif [Formula 8] M+ O 〇2 [Equation 6] o m. -〇441hoh \\ I O 〇2 [Equation 7] 〇5~~fx)-
[式4] [式5] A+Z- [式1] a+-o-^-61-c2-c2~〇. II I 〇 〇2 在式1、式4、式5、々β 烷基,QrQAQ么白^式7以及式8中,R6表示 目# 5自獨立地表示鹵素原子丨Y表示由 $ 3至3〇個碳原子之觀基及具有3至3Q個碳原子之 輯基所構成的族群中勒妹-者;X表示由下列基團 所構成的族群中選出之任—者·炫二基、婦二基、服,、s、 〇、C〇以及其組合;R,表示氫原子及烧基;η表示〇至5 8 201144264 之整數’且A+表示有機相對離子。表示由下列離子所 構成的族群中選出之任—者:u+、Na+及κ+ ;且z_表示 由下列離子所構成的族群中選出之任一者:(〇s〇2CF3)一、 (0S02C4F9)- > (〇S〇2C8F17)- > (N(CF3)2)- ' (N(C2F5)2)- ' (N(C4F9)2) ^ (C(CF3)3)- , (C(C2F5)3)- ^ (C(C4F9)3)- ' F- > cn-、Br-、I-、BF4” AsV 以及 pF6。 減本發明之另—實施例,提供化學增幅型光阻組合 物,其含有如上所述之光酸產生劑。 下文中將更洋細描述本發明。 本發明說明書巾所細之術語定義如下。 除非本文另外特別說明,否則鹵素原子意謂由下列原 子所構成的族群中選出之任—者m以及埃。 除非本文另外特別說明,否則烧基包括一級烧基、二 级烷基以及三級烷基。 除,本文另外特別說明,否狀二基為藉由烧煙上脫 :兩個=子:獲得之二價原子團,且可由通式 除非本文另外特別說明,否則全氟烷其音巧一 原子或所有氫原子經氟取代产其 凡土忍明β刀虱 部分氫原子或所有氫原子經氟二;之=烧氧基意謂- 經取特化合物及取代基可 列基團所構成的族群中選出之任一者=、=^ 201144264 38471pif 經基、敌基、氰基、硝其此 腊美、㈣、基、硫基、f硫基、院氧基、 尸二、二二1、㈣基、§旨基、絲、祕基、酮基、 :土、王氟烧土、環燒基、雜環烧基、婦丙基、节基、芳 基、雜芳基,其衍生物,以及其组合。 土 除非本文另外特別說明, 經一至三個由N、〇、s及p 子取代。 否則字首「雜」意謂碳原子 所構成的族群中選出之雜原 除非本文另外特別說明,否職基意謂 個碳原子之直鏈或分支鏈絲;烧二基意謂具有i至ι〇 個=原子之炫二基;埽二基意謂具有2至1()個碳原子之稀 2 ;稀丙基意謂具有2至1()個碳原子之烯丙基;烧氧基 =具有i至Π)個碳原子之絲基;全氟燒基意謂具有i 至10個碳原子之全魏基;全歧氧基意謂且有丨至1〇 個碳原子之全眺氧基;Μ紐基意謂科丨至1G個碳原 子之羥基烷基;環烷基意謂具有3至32個碳原子之環浐 基;雜環烷基意謂具有2至32個碳原子之雜環烷基;芳= 具有6至30個碳原子之芳基;且雜芳基音袖’二广 個碳原子之雜芳基。 H⑽ 如本文所用,Me為曱基之縮寫。 本發明之一實施例的光酸產生劑由下式丨表示 [式1][Formula 4] [Formula 5] A+Z- [Formula 1] a+-o-^-61-c2-c2~〇. II I 〇〇2 In Formula 1, Formula 4, Formula 5, 々β-alkyl, In the formula Q7 and the formula 8, R6 represents that the target #5 independently represents a halogen atom 丨Y represents an observation group of $3 to 3 carbon atoms and a radical having 3 to 3Q carbon atoms. Among the ethnic groups, X is the one selected from the group consisting of the following groups: Hyun Erji, Fu Erji, Qi, s, 〇, C〇 and combinations thereof; R, hydrogen Atom and a base; η represents an integer from 〇 to 5 8 201144264 and A+ represents an organic relative ion. It is selected from the group consisting of: u+, Na+, and κ+; and z_ represents any one of the following groups of ions: (〇s〇2CF3) I. (0S02C4F9 )- > (〇S〇2C8F17)- > (N(CF3)2)- ' (N(C2F5)2)- ' (N(C4F9)2) ^ (C(CF3)3)- , , (C (C2F5)3)- ^(C(C4F9)3)- 'F- > cn-, Br-, I-, BF4" AsV and pF6. Substituting another embodiment of the invention to provide a chemically amplified photoresist A composition comprising a photoacid generator as described above. The invention will be described more hereinafter. The terminology of the specification of the present invention is defined as follows. Unless otherwise specifically stated herein, a halogen atom means Among the constituent groups, the m and the angstroms are selected. Unless otherwise specified herein, the alkyl group includes a primary alkyl group, a secondary alkyl group, and a tertiary alkyl group. From the burning of smoke: two = sub-: obtained divalent atomic group, and can be derived from the general formula unless otherwise specified herein, otherwise the perfluoroalkane is one atom or all hydrogen atoms replaced by fluorine Any of the hydrogen atoms or all of the hydrogen atoms of the genus β 虱 经 氟 氟 ; ; ; = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = ^ 201144264 38471pif carbyl, diradical, cyano, nitano, (iv), thiol, thiol, alkoxy, corpse 2, 2, 1, (4), §, base, silk, secret a base, a ketone group, a soil, a king fluorocarbonate, a cycloalkyl group, a heterocycloalkyl group, a propyl group, a benzyl group, an aryl group, a heteroaryl group, a derivative thereof, and a combination thereof. Unless otherwise specifically stated herein One to three are replaced by N, 〇, s, and p. Otherwise, the word "hetero" means the miscellaneous matter selected from the group consisting of carbon atoms. Unless otherwise specified in this article, the non-function base means a carbon atom. a straight or branched chain filament; a burnt dibasic meaning has a dih radical of i to ι〇 = atom; a fluorenyl group means a dilute 2 having 2 to 1 () carbon atoms; a dilute propyl means having 2 Allyl groups to 1 () carbon atoms; alkoxy groups = silk groups having from i to Π) carbon atoms; perfluoroalkyl groups means all-wei groups having from i to 10 carbon atoms; And means a fluorenyloxy group having from 1 to 3 carbon atoms; a cycloalkyl group means a cyclic fluorenyl group having from 3 to 32 carbon atoms; Heterocycloalkyl means a heterocycloalkyl group having 2 to 32 carbon atoms; aryl = an aryl group having 6 to 30 carbon atoms; and a heteroaryl group having a heteroaryl group of two broad carbon atoms. H(10) As used herein, Me is an abbreviation for sulfhydryl. The photoacid generator of one embodiment of the present invention is represented by the following formula [Equation 1]
0 ?1 h2 h20 ?1 h2 h2
A+-0—S—C_C —C —OA+-0—S—C_C —C —O
II I O 〇2 201144264 38471pif 在上式1中,(^及Q2各自獨立地表示鹵素原子,且 較佳為氟原子。 η為0至5之整數,且較佳為〇至2之整數。 X表示由下列基團所構成的族群中選出之任一者··烷 二基、稀二基、NR1、s、〇、CO以及其組合,且R,表示 由氫原子及烷基所構成的族群中選出之任一者。 X可表示由下列基團所構成的族群中選出之任一者: -〇-、-〇CH2-、-OCH(Cl)-、-CO-、-coch2-、-COCH2CH2-、 -CHr、-CH2CH2-、-CH2-〇-、-CH2-〇-CH2-、-CH2CH2-0-、 -CH2-0-CH2CH2- ' -CH2CH2-0-CH2- > -CH2CH2CH2-0- ' -ch2-o-ch2ch2ch2- 、-CH2CH2-〇-CH2CH2-、 -ch2ch2ch2-0-ch2- ^ -CH(CH3)- ^ -C(CH3)2CH2- ^ -CH(CH3)CH2- ' -CH(CH2CH3)- . -CH(OCH3)- ' -C(CF3)(OCH3)- ' -CH2-S- ' -CH2-S-CH2- ' -CH2CH2-S- ' -CH2-S-CH2CH2- ' -CH2CH2-S-CH2- ' -CH2CH2CH2-S- ' -CH2-S-CH2CH2CH2- 、 -CH2CH2-S-CH2CH2-、 -CH2CH2CH2-S-CH2- ' -CH(CH2)CH- ' -C(CH2CH2)- ' -CH2C0-、-CH2CH2CO-、-CH(CH3)CH2CO-、-CH(OH)-、 -C(OH)(CH3)-、-CH(F)-、-CH(Br)-、-CH(Br)CH(Br)-、 -CH=CH- > -CH2CH=CH- ^ -CH=CHCH2- ^ -CH=CH-0- > -CHNCH-S-,以及-CH=CHCO-。 在上式1中,Y表示由具有3至30個碳原子之環烷 基及具有3至30個碳原子之環烯基所構成的族群中選出之 任一者0 201144264 3847 lpif Y可表示由下列基團所構成的族群中選出之任一者: 金剛烷基、降冰片基(norbornyl group)、具有1〇至30個 碳原子的包括降冰片基之多環環烷基、具有3至14個碳原 子的單%環烷基、具有4至20個碳原子的雙環環烷基、具 有10至30個碳原子的三環環烷基,以及具有1〇至3〇個 碳原子的四環環烷基。 Y之氫原子中,一至五個氫原子可經由下列基團所構 成的族群中選出之任一者取代:具有丨至6個碳原子之烧 基、具有1至6個碳原子之烷氧基、具有丨至4個碳原子 之全氟烷基、具有1至4個碳原子之全氟烷氧基、具有1 至6個碳原子之羥基烷基、鹵素原子、羥基、氰基、硝基、 胺基、硫基、曱硫基、曱氧基、、c〇R,,以及c〇〇R,。 R’表示由烧基及芳基所構成的族群中選出之任一者。 較佳地’Y可表示由下列各式1-a至i_i所構成的族群 中選出之任一者。 12 201144264 [式 l-a] [式 1-b]^T^Rl1)b [式 1-c] [式 1-d]II IO 〇 2 201144264 38471pif In the above formula 1, (^ and Q2 each independently represent a halogen atom, and preferably a fluorine atom. η is an integer of 0 to 5, and preferably an integer of 〇 to 2. X represents Any one selected from the group consisting of an alkyldiyl group, a dilute diyl group, NR1, s, anthracene, CO, and a combination thereof, and R represents a group consisting of a hydrogen atom and an alkyl group Any one selected. X may represent any one selected from the group consisting of: -〇-, -〇CH2-, -OCH(Cl)-, -CO-, -coch2-, -COCH2CH2 -, -CHr, -CH2CH2-, -CH2-〇-, -CH2-〇-CH2-, -CH2CH2-0-, -CH2-0-CH2CH2-'-CH2CH2-0-CH2- > -CH2CH2CH2-0 - ' -ch2-o-ch2ch2ch2-, -CH2CH2-〇-CH2CH2-, -ch2ch2ch2-0-ch2- ^ -CH(CH3)- ^ -C(CH3)2CH2- ^ -CH(CH3)CH2- ' - CH(CH2CH3)- . -CH(OCH3)- ' -C(CF3)(OCH3)- ' -CH2-S- ' -CH2-S-CH2- ' -CH2CH2-S- ' -CH2-S-CH2CH2- '-CH2CH2-S-CH2- '-CH2CH2CH2-S- '-CH2-S-CH2CH2CH2-, -CH2CH2-S-CH2CH2-, -CH2CH2CH2-S-CH2- '-CH(CH2)CH- '-C( CH2CH2)- '-CH2C0-, -CH2CH2CO-, -CH(CH3)CH2CO-, -CH(OH)-, -C(OH)(CH3)-, -CH(F)-, -CH(Br)-, -CH(Br)CH(Br)-, -CH=CH- > -CH2CH=CH-^ -CH =CHCH2- ^ -CH=CH-0- > -CHNCH-S-, and -CH=CHCO-. In the above formula 1, Y represents a cycloalkyl group having 3 to 30 carbon atoms and has 3 to Any one selected from the group consisting of cycloalkenyl groups of 30 carbon atoms 0 201144264 3847 lpif Y may represent any one of the groups consisting of the following groups: adamantyl group, norbornyl group a polycyclic cycloalkyl group having a norbornyl group having 1 to 30 carbon atoms, a mono-cycloalkyl group having 3 to 14 carbon atoms, a bicyclic cycloalkyl group having 4 to 20 carbon atoms, having a tricyclic cycloalkyl group of 10 to 30 carbon atoms, and a tetracyclic cycloalkyl group having 1 to 3 carbon atoms. In the hydrogen atom of Y, one to five hydrogen atoms may be substituted by any one selected from the group consisting of: a group having from 丨 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms a perfluoroalkyl group having up to 4 carbon atoms, a perfluoroalkoxy group having 1 to 4 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, a halogen atom, a hydroxyl group, a cyano group, a nitro group , amine, thio, thiol, decyloxy, c〇R, and c〇〇R,. R' represents any one selected from the group consisting of an alkyl group and an aryl group. Preferably, 'Y' may be any one selected from the group consisting of the following formulae 1-a to i_i. 12 201144264 [Formula l-a] [Formula 1-b]^T^Rl1)b [Formula 1-c] [Formula 1-d]
[式 1-e][Equation 1-e]
[式 1-h][Equation 1-h]
[式 1-i] 13 201144264 38471pif 在式1-a至1-i中’ Rn及Ri2可各自獨立地表示氫原 子、烧基、烧氧基、全氟燒基、全氟烧氧基、鹵素原子、 經基、缓基、氰基、硝基、胺基、硫基、曱硫基、曱氧基、 OR1、COR’,以及COOR’。R·表示由烷基及芳基所構成的 族群中選出之任一者。 在上文所示之下標中’ a、c及d各自獨立地表示〇至 9之整數;b表示0至11之整數;e表示〇至15之整數; f表示0至7之整數;且0$ c+d $ 17 ’同時〇 $ c+f $ 15。 較佳地’在式1-a、l~b、l_d以及Ι-g中,r"可表 示由下列基團所構成的族群中選出之任一者:氫原子、具 有1至6個碳原子之烷基、具有1至6個碳原子之烷氧基、 具有1至4個碳原子之全氟烷基、具有1至4個碳原子之 全氟烷氧基、具有1至6個碳原子之羥基烷基、鹵素原子、 羥基、氰基、硝基、胺基、硫基、甲硫基,以及甲氧基。 此外,在卜c、Ι-e、Ι-f、卜h以及1-1中,Ru及Rl2 可各自獨立地表示由下列基團所構成的族群中選出之任一 ^ :氫原子、具有1至6個碳原子之烷基、具有丨至6個 碳原子之烧氧基、具有!至4個碳原子之全氟炫基、具有 1至4個碳原子之全氟烷氧基、具有1至6個碳原子之羥 基烧基、鹵素原子、經基、氰基、硝基、胺基、硫基、甲 硫基、甲氧基,以及其組合。 較佳地,由下式3表示之部分可表示由下列各式i—i 至j-xx所構成的族群中選出之任一者所述式3為由上文 所示之式1表示之化合物的陰離子部分。 -x-201144264 [式3] ? ?1 h2 h2 -0—s—c—C -G -o- Jl i 〇 〇2 [式 l-i 至 l-xx] -o[Formula 1-i] 13 201144264 38471pif In the formulae 1-a to 1-i, 'Rn and Ri2 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, a perfluoroalkyl group, a perfluoroalkoxy group, a halogen. Atom, a sulfhydryl group, a thiol group, a cyano group, a nitro group, an amine group, a thio group, a thiol group, a decyloxy group, OR1, COR', and COOR'. R· represents any one selected from the group consisting of an alkyl group and an aryl group. In the above-mentioned subscripts, 'a, c and d each independently represent an integer from 〇 to 9; b represents an integer from 0 to 11; e represents an integer from 〇 to 15; and f represents an integer from 0 to 7; 0$ c+d $ 17 'At the same time 〇 $ c+f $ 15. Preferably, 'in the formulae 1-a, l~b, l_d, and Ι-g, r" may represent any one selected from the group consisting of: a hydrogen atom having 1 to 6 carbon atoms An alkyl group, an alkoxy group having 1 to 6 carbon atoms, a perfluoroalkyl group having 1 to 4 carbon atoms, a perfluoroalkoxy group having 1 to 4 carbon atoms, having 1 to 6 carbon atoms A hydroxyalkyl group, a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amine group, a thio group, a methylthio group, and a methoxy group. Further, in c, Ι-e, Ι-f, 卜h and 1-1, Ru and Rl2 each independently represent any one selected from the group consisting of: hydrogen atom, having 1 An alkyl group of up to 6 carbon atoms, an alkoxy group having from 丨 to 6 carbon atoms, having! Perfluorononyl group to 4 carbon atoms, perfluoroalkoxy group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, halogen atom, trans group, cyano group, nitro group, amine Base, thio, methylthio, methoxy, and combinations thereof. Preferably, the moiety represented by the following formula 3 may represent any one selected from the group consisting of the following formulas i-i to j-xx, and the formula 3 is a compound represented by the formula 1 shown above. The anion part. -x-201144264 [Equation 3] ? 1 h2 h2 -0-s-c-C -G -o- Jl i 〇 〇2 [Form l-i to l-xx] -o
o f2 h2 .s-c, A c h2 o 〇 h2 O F2 H2 〇-S-CvAn -〇 w CO 0 h2 [1-i] 0 f2 h2crVSA 0 h2 11-tv ] 1-ii]o f2 h2 .s-c, A c h2 o 〇 h2 O F2 H2 〇-S-CvAn -〇 w CO 0 h2 [1-i] 0 f2 h2crVSA 0 h2 11-tv ] 1-ii]
o f2 h2 VC c -〇Λ v '〇 h2o f2 h2 VC c -〇Λ v '〇 h2
[1-vi ] 9 f2 h2 〇 h2 [1-vii ][1-vi ] 9 f2 h2 〇 h2 [1-vii ]
[1-viii] 0 F2 H2 〇4rVc'〇 0 H2 [1-x][1-viii] 0 F2 H2 〇4rVc'〇 0 H2 [1-x]
-0 〇 f2、、r - S—c、 ^ L 〇 H2 O F2 H2 人 〇 co o h2 [1-xii]-0 〇 f2, r - S-c, ^ L 〇 H2 O F2 H2 person 〇 co o h2 [1-xii]
<y〇H h2 r^\^os 〇 〇 o H2 -o o f2 h2 一、έ -〇、〆〇 \、 C 〇 ο Η2 ον<y〇H h2 r^\^os 〇 〇 o H2 -o o f2 h2 I, έ -〇, 〆〇 \, C 〇 ο Η2 ον
[1-x [1-xiv] 15 201144264 38471pif O F2 H2[1-x [1-xiv] 15 201144264 38471pif O F2 H2
[1-xviii ] o f2 h2 o-s-c ϋ 、、 c 0一 o h2 [1-xvii ][1-xviii ] o f2 h2 o-s-c ϋ , , c 0一 o h2 [1-xvii ]
o f2 h2 〇Js-c c 〇 h2 [1-xvi]o f2 h2 〇Js-c c 〇 h2 [1-xvi]
O F2 h2 crVC、A 〇 [1-xx ] [1-xix ]O F2 h2 crVC, A 〇 [1-xx ] [1-xix ]
當使用諸如ArF之光源時,藉由將脂環族環(alicyclic ring)引入由上式3表示之化合物中而獲得之上述光酸產 生劑可提供能夠調節酸擴散率且展現諸如高滲透性之特徵 的光酸產生劑,所述式3為由式1表示之化合物的陰離子 部分。 在式1中,A+表示有機相對離子。 特定言之,由下式2表示之部分可表示由下式2a及 2b所構成的族群中選出之任一者,所述式2為由式1表示 之化合物的陽離子部分。 16 201144264 [式2] A+ [式 2a]When a light source such as ArF is used, the above photoacid generator obtained by introducing an alicyclic ring into the compound represented by the above formula 3 can provide an ability to adjust the acid diffusion rate and exhibit such as high permeability. A photoacid generator characterized by the anion portion of the compound represented by Formula 1. In Formula 1, A+ represents an organic relative ion. Specifically, the portion represented by the following formula 2 may represent any one selected from the group consisting of the following formulas 2a and 2b, and the formula 2 is a cationic portion of the compound represented by Formula 1. 16 201144264 [Formula 2] A+ [Formula 2a]
[式 2b][Formula 2b]
R3 牡上式幺a乃ou i 其111私摄二、夂2b中’ Ri及R2各自獨立地表示由下列 ί團所構成的族群中選出之任-者:氫原子、絲、婦丙 二全氟烧基、芳基,以及其組合,J· Ri及&可彼此鍵 、、、。以形成具有3至3〇個碳原子的飽和或不飽和烴環。 R4表示由下贿_構成職群帽出之任一者 素原子、烷基、烷氧基、芳基、炉&备# ^ 万丞裰烷氧基、烷氧基羰基甲 虱基、硫苯氧基、以及其組合。 尺3及尺5各自獨立地表示由y ό # 選出之任一者··氫原子、貌基、烯==族芳群/ 以及其組合。 土 方基' 在式2a及2b中,烷基之實例包括ρ基、乙基、 土丙基^、 17 201144264 38471pif 異丙基、正丁基、戊基、 例包括甲氧基、乙氧基、 辛氧基。 己基,以及辛基,且烷氧基之實 丙氧基、丁氧基、己氧基,以及 另外,由式2表_ 2-χχ所構成的族群中^之^分可表示由下列各式2—i至 示之化合物的陽離子部分,任—者,所述式2為由式!表 [式2-i至jR3 上上式幺a is ou i Its 111 private photo 2, 夂 2b ' Ri and R2 each independently represent the selected group of the following groups: hydrogen atom, silk, women's two A fluoroalkyl group, an aryl group, and a combination thereof, J· Ri and & can be bonded to each other. To form a saturated or unsaturated hydrocarbon ring having 3 to 3 carbon atoms. R4 means that any one of the group consisting of a bribe _ constituting a group of atoms, an alkyl group, an alkoxy group, an aryl group, a furnace, an alkoxy group, an alkoxycarbonylmethyl group, a sulfur Phenoxy groups, and combinations thereof. The ruler 3 and the ruler 5 each independently represent any one selected by y ό #·························· Earth-based 'In Formulas 2a and 2b, examples of the alkyl group include ρ, ethyl, propyl, 17 201144264 38471pif isopropyl, n-butyl, pentyl, including methoxy, ethoxy, Octyloxy. a hexyl group, and an octyl group, and a propoxy group of alkoxy group, a butoxy group, a hexyloxy group, and, in addition, a group consisting of the formula _ 2-χχ of the formula 2 can be represented by the following formulas 2-i to the cationic part of the compound shown, any one, the formula 2 is of the formula! Table [Formula 2-i to j
18 20114426418 201144264
F [2-ix ]F [2-ix ]
[2-xi ] [2-xii ][2-xi ] [2-xii ]
OrOr
[2-xiii ] [2-Χ][2-xiii] [2-Χ]
CH H3C-S + 00CH H3C-S + 00
-S-S
[2-xvi ] [2-xv】[2-xvi ] [2-xv]
[2-xvii ] [2-xviii] [2-xix ] [2-xx] 由式2表示之部分可表示由下式3a及3b所構成的族 群中選出之任一者,所述式2為由式1表示之化合物的陽 離子部分。 19 201144264 38471pif [式 3a] i +[2-xvii ] [2-xviii] [2-xix ] [2-xx] The portion represented by Formula 2 may represent any one selected from the group consisting of the following Formulas 3a and 3b, and the Formula 2 is The cationic portion of the compound represented by Formula 1. 19 201144264 38471pif [Formula 3a] i +
[式 3b] I +[Formula 3b] I +
在式3a及3b中,R!表示由下列基 選出之任一者:氫原子、烧基、埽丙基、全狀基 / 以及其組合。 丞 ~及R3各自獨立地表示由下列基團所構成的 選出之任-者:氫原子、烧基、埽丙基、全說院基 以及其組合。 R4表示由下列基團所構成的族群中選出之任一者. 素原子、烧基、錄基、芳基、硫燒氧基、絲基幾基可 氧基'硫苯氧基,以及其組合。 在式3a及3b中,烷基之實例包括曱基、乙基'丙基 異丙基、正丁基、笨基、己基’以及辛基,战氧基& 例包括曱氧基、乙氧基、丙氧基、丁氧基、己氧基,以2 辛氧基。 _ 201144264 另外’由式2表示之部分可表示由下列各式3-i至3~ix 所構成的族群中選出之任一者,所述式2為由式1表示之 化合物的陽離子部分。 [式 3-i 至 3-ix]In Formulae 3a and 3b, R! represents any one of the following: hydrogen atom, alkyl group, fluorenyl group, hologram group, and combinations thereof.丞 and R3 each independently represent a selected one of the following groups: a hydrogen atom, a pyridyl group, a fluorenyl group, a full-length group, and combinations thereof. R4 represents any one selected from the group consisting of a aryl group, a decyl group, a aryl group, an aryl group, a sulfur alkoxy group, a benzyloxycarbonyl thiophenoxy group, and combinations thereof. . In the formulae 3a and 3b, examples of the alkyl group include mercapto group, ethyl 'propyl isopropyl group, n-butyl group, strepyl group, hexyl group, and octyl group, and the oxy group and the oxime group include an anthracene group and an ethoxy group. A group, a propoxy group, a butoxy group, a hexyloxy group, and a 2 octyloxy group. _ 201144264 Further, the portion indicated by the formula 2 may be any one selected from the group consisting of the following formulae 3-i to 3 to ix, and the formula 2 is a cationic portion of the compound represented by the formula 1. [Formula 3-i to 3-ix]
製造由本發明之另一實施例之式1表示的光酸產生劑 的方法包括:第一步驟:將由下式8表示之化合物溶於溶 劑中,且使溶液與還原劑反應以獲得由下式6表示之化合 物;第二步驟:使由下式7表示之化合物與由下式6表示 之化合物在鹼性催化劑存在下反應,以獲得由下式4表示 之化合物;以及第三步驟:使由下式4表示之化合物與由 下式表示之化合物進行取代反應,且藉此獲得由式1表示 之化合物。 第一步驟包括以下過程:將由下式8表示之化合物溶 於溶劑中,添加還原劑,且藉此獲得由下式6表示之化合 物。 201144264 38471pifA method of producing a photoacid generator represented by Formula 1 of another embodiment of the present invention includes a first step of dissolving a compound represented by the following Formula 8 in a solvent, and reacting the solution with a reducing agent to obtain a formula 6 a compound represented by the second step: reacting a compound represented by the following formula 7 with a compound represented by the following formula 6 in the presence of a basic catalyst to obtain a compound represented by the following formula 4; and a third step: The compound represented by Formula 4 is subjected to a substitution reaction with a compound represented by the following formula, and thereby a compound represented by Formula 1 is obtained. The first step includes a process of dissolving a compound represented by the following formula 8 in a solvent, adding a reducing agent, and thereby obtaining a compound represented by the following formula 6. 201144264 38471pif
U M+ -0-S-c1-r2 ^ η Y c^ 〇 q2 0、R6 [式6] M+ 在式6及式8中, 列基團所構成的族群中、6表示烷基,且可特定地表示由下 三氯曱基、三溴曱基、^出之任一者:甲基、三氟甲基、 QaQ2各自獨立^表^甲基、乙基、丙基,以及丁基。 表示由下_切構成絲㈣㈣子。嶽 及κ+。 叼私蛘中選出之任一者:Li+、Na+ 關步驟反應中用於溶解 :劑,只要溶劑能夠溶解由式8表示之醋 原反應,則任何溶劑皆可使用。 並引起還 任一 I,劑二,物1所構成的族群中選出之 :壬者.酉曰、醚、内酯,、醯胺、 出之 較佳地,可將醇基溶劑與由下列 組合,且 之任一者—起使用:二氯以、氯/構==群中選出 歹苯、四氫糾、二W醯胺 -氯乙烷、乙腈、 但本發明不欲僅限於此等溶劑。 石’以及其組合, 醇基溶劑可為由下列醇所構成的族群t選出之任一 22 201144264 3847lpif 者··曱醇、乙醇、丙醇、異丙醇、正丁醇、 丁醇、側氧基丁醇、十-醇、經基癸醇、庚醇、弟^ 戊醇、烯丙醇、乙氧絲基甲醇、甲氧基乙醇、土 -2-丙醇、苄醇、苯乙醇、環己醇、壤y含 卜 土 衣、溥何醇、四氫糠醇、四 氫旅喃醇、氰基丁醇、4,基-2-丁酮,以及其组合, 發明不欲僅限於此等溶劑。 一+ 可使用由下列各物所構成的族群中選出之任一者作 為還原劑:NaBH4、LiAlH4、BHa-THF、NaBH4-AlCl3、 NaBH4-LiCl、LiAl(〇Me)3,以及其組合。 由式8表示之化合物與還原劑可以1:1至1:5之莫耳 比使用’且較佳幻:2至1:3.5之莫耳比使用。當由式8 表示之化合物與還原劑是以上述莫耳比使用時,相對於所 使用之還原劑之量的產物產率可增加。 特定言之,第一反應可包括以下步驟:在冰浴中將由 式8表示之化合物溶於上文提及之溶劑中,逐滴添加還原 劑至溶液以製備反應混合物液體,將反應混合物液體自冰 洛中移出’且加熱並擾拌反應混合物液體。 攪拌過程較佳可在20°C至120°C下進行2至6小時, 且更佳在6(TC至100〇C下進行3至5小時。當在上述溫度 及時間範圍内實現攪拌過程時,產物產率可增加,且副產 物形成可減至最少。 反應混合物液體之反應藉由淬冷(quenching)來終 止’移除溶劑,隨後收集反應產物。 關於收集反應產物之方法,任何能夠自反應混合物液 23 201144264 體中移除溶劑並收集反應產物的習知方法皆可使用,且例 如可使用再結晶方法、藉由使用容易溶解所得化合物之溶 劑與歲乎不》谷解所述化合物之溶劑的混合物來固化反鹿產 物的方法、用溶劑萃取反應產物濃縮物的方法、或濃^反 應產物的方法。 可使用的收集反應產物之方法的較佳實例可為以下 方法:自反應混合物液體中移除溶劑,將殘餘物溶於蒸餾 水中,隨後將溶液酸化至pH值為5至6,濃縮反應混合物 液體,再次向濃縮物中添加醇以移除漿液形式之無機鹽, 過濾殘餘物,以及使用乙醚或其類似物使濾液結晶。 由式8表示之化合物可經由以下步驟而製備:中間物 製備步驟:使烷氧化物與鹵化物反應,生成具有兩個烷氧 基之二烷氧基_化物,隨後使二烷氧基鹵化物的兩個烷氧 氧化生成由下式9表不之化合物;以及續化步驟: 使由式9表示之化合物與無機亞硫酸鹽反應,生成由式8 表示之化合物。 [式9] Q3~c1-c2-?-〇__r q2 6 在式9中,&表示烷基,且地表示由下列基 :構,群中選出之任一者:甲基、三氣甲基、三氣; 、'、甲基、二蛾甲基、乙基、丙基,以及丁基;且仏 至Q3各自獨立地麵自素原子 ,且較佳為氟原子。 24 201144264 38471pif 之,烧氧化物言 ^ :可為烷基鹵化物’且可特定地為全氟曱烷、二溴二 氟曱烷、全溴甲烷或全氯甲烷。 _ ίΓ,製備步驟中’使燒氧化物與鹵化物在醇基溶 ,中反應,且所述化合物亦可與亞硫酸油(Na2 二=(NaHC03)反應。另夕卜,使如上所述生成之二 ,氧基自化物之兩織氧基之_氧化的反應可在氧化劑存 下進仃,且可使用之氧化劑的特定實例為证犯5。 特定言之,可使用亞硫酸氫鈉作為触步驟中所使 之無機亞硫酸鹽’且所述反應亦可在添加碳酸氯納 (NaHC03)之後進行。當使用亞猶氫㈣行續化反應 時,可藉由氧化由此生成之有機磺酸鹽而生成由式8表示 之化合物。在此情況下,可使用過氧化氫(Ah)、鎢酸 鈉(NaWO4)或其類似物作為氧化劑。 第二步驟包括以下過程:使由下式7表示之化合物與 由式6表示之化合物在鹼性催化劑存在下反應且藉此庐二 由下式4表示之化合物。 又于 25 201144264 •/V/ · · [式7] α5-4χ4ί^0 [式4] M+-。— 及式7中’ Ql、Q2及A各自獨立地表示齒素 ::至=氣原子;且η表示。至5之整數,且較佳 卿㈣軸鱗働之任十 夕及γ具有與上文對於由式1表示之化合物所述相同 之疋義’且所述定義將不再重複。 纽ιΐί用由刊各物觸朗辦中❹之任一者作 為驗性催化劑:三乙胺、二乙胺、_、二乙 =細合。當在第二步驟反射使用鹼性催ς劑時,可 2^1、反應時_獲得所要產物,且因此,可增加反應的 第二步驟之反應可在溶劑存在下進行,且 =物所構成的族群t選出之任—者作為溶劑:酿、驗、 下歹:各:所醇,以及其組合。較佳地,溶劑可為由 下歹J各物所構成的族群中選出之任—者··二氯甲貌、氯仿、 26 201144264 38471pif 乙酸乙酯,以及其組 二氯乙烷、乙腈、曱苯、乙酸甲酯 合0 在反應中,由式6表示之化合物與由式7表示之化合 物可以1:1至1:3之莫耳比使用,且較佳可以i、:u ^ 1丄5之莫耳比使用。當使由式6表示之化合物*由式7 表示之化合物以上述莫耳比反應時,兩種化合物可'完全消 耗,且藉此可增加反應效率。 另外’在反應中’由式6表示之化合物與鹼性催化劑 可以1:1至1:4之莫耳比使用,且較佳以1:1 1至1.2之 莫耳比使用。當式6化合物與鹼性催化劑以上述莫耳比用 於反應中時,反應時間可加速,且可使任何殘餘鹼性催化 劑之移除更容易。 第二步驟反應可特定地包括以下過程:將由式6表示 之化合物及鹼性催化劑溶於溶劑中,在升高的溫度下攪拌 混合物’將溶於溶劑中之由式7表示之化合物添二至^合 物中,且隨後攪拌所得混合物。 13 攪拌過程較佳可在40°C至120°C之溫度下進行〇 5至 6小時’且更佳在6〇。(:至9(TC之溫度下進行2至3小時。 當在上述溫度及時間範圍内進行攪拌過程時,產物產率可 增加,且副產物形成可減至最少。 反應混合物液體之反應藉由淬冷來終止,移除溶劑, P通後使反應產物結晶。從而’可獲彳于由式4表示之化合物。 關於結晶方法,只要方法為自反應混合物液體中移除 溶劑且使反應產物結晶的常見方法,則任何方法皆可使用 27 201144264 W I f ▲免/暴& 而無限制。然而,較佳地,可藉由洗滌反應混合物,接著 分開有機層以移除溶劑,使用管柱層析來分開殘餘物,然 後在真空中乾燥反應產物來獲得反應產物。 第二步驟包括以下過程:使由上文所示之式4表示之 化合物與由下式5表示之化合物進行取代反應,且藉此獲 得由下式1表示之化合物。 「4 R] A+Z- 在式5中,Z-表示由下列離子所構成的族群中選出之 任-者:(〇S02CF3>、(〇S〇2c4F9)·、(os〇2c8Fi7)_、 (N(CF3)2)- ' (N(C2F5)2)- . (N(C4F9)2) > (C(CF3)3). > (C(C2F5)3)-、(C(C4F9)3)-、F-、ci-、Br-、I_、BF4_、AsF6_ 以及PF0- ; A+表示有機相對離子。由於此有機相對離子的 具體定義與提供給由式1表示之化合物之定義相同,因此 將不再重複描述。 由式4表示之化合物與由式5表示之化合物可以1:1 至5:1之莫耳比使用’較佳以i:i至3:1之莫耳比使用, 且甚至更佳以1:1至2:1之莫耳比使用。當化合物以上述 莫耳比使用時,反應處理時間可減至最少,且可抑制由使 用過量反應產物而引起之任何副反應。 可藉由使用再結晶方法進行取代反應,或者亦可使用 利用令人滿意地溶解所述鹽之溶劑(良溶劑)與不良溶解 28 201144264 38471pif 所述鹽之溶劑(不良溶劑)的混合物來固化及回收自反應 所獲得之鹽的方法,以及用溶劑萃取之方法,或濃縮並回 收所獲得之鹽的方法。 較佳地’將化合物溶於二氣曱烧及水中以形成兩層, 隨後可攪拌此兩層以使取代反應發生。在使用此種兩層反 應法之情況下,其有利之處在於不需要其他方法來分離產 物。攪拌可進行2至6小時,且亦可進行2至4小時。當 在上述時間範圍内進行反應時,產物產率可最大限度地增 加。 Μ經由上述過程生成由式1表示之化合物時,可藉由 有效且簡單之方法生成由式1表示之化合物。 根據本發明之另一實施例的光阻組合物含有由上文 所不之式1表示之光酸產生劑。光阻組合物是基於習知光 阻組合物的組成,且因此本文中將不再重複關於光阻組合 物的描述。 本發明之光酸產生劑可在曝光時產生酸,所述酸具有 低擴散率、短擴散距離,且展現適當酸度以使線寬粗糙度 (LWR)特徵可得以改良,並且其在製程中使用的諸如純 水之溶劑中的溶離可受控制。此外,製造本發明之光酸產 生劑的方法可經由有效且簡單之方法產生上述光酸產生 劑。 29 201144264 38471pif 【實施方式】 下文中將藉助於實例詳細描述本發明以使具有關於本 發明之一般技術者可容易地進行本發明。然而了本發明可 在各種更動與修改下進行,本發明之範疇不限於本文所述 之實例。 合成光酸產生劑 [光酸產生劑之合成實例1] 合成金剛烧基-3,3-二氟-3-續基-丙醚二苯基甲基苯基 疏鹽(Adamantyl-3,3-difluoro-3-sulfo-propyl ether diphenyl methylphenyl sulfonium salt) (步驟1)如以下反應流程1中所示,在冰浴中將83 公克(0· 376莫耳)1,1-二氟—3-甲氧基-3-側氧基丙烷一卜 磺酸鈉溶於作為溶劑之160毫升甲醇(Me〇H)及12公 升四氳吱°南(THF)中。將44公克(1. 16莫耳)删氫化 鈉(NaBH4)逐滴緩慢添加至溶液中,從而製備反應混合 物液體。逐滴添加完成後,將反應混合物液體自冰浴中移 出,且加熱至60X:。保持所述溫度的同時,攪拌反應混合 物液體約4小時。 反應混合物液體經蒸餾水淬冷,隨後移除溶劑。將粗 反應混合物溶於蒸餾水,且用濃鹽酸將溶液酸化至 為5至6。 濃縮經酸化之反應混合物,且再次向其中添加甲醇。 過濾由此獲得之漿液以移除無機鹽。用己烷洗滌藉由移除 漿液所獲得之濾液兩次,且再次濃縮曱醇層,隨後使用乙 醚來結晶。 201144264 在真空中乾燥藉由結晶所獲得之白色固體,且化合物 結構藉由1H-NMR而得以確定。由此獲得5公克(0. 346 莫耳,產率95%) 1,1-二U-經基丙烧-1-石黃酸鈉。 ^-NMR (D20): (ppm) 2.38(t, 2H), 4.18(t, 2H) [反應流程1]U M+ -0-S-c1-r2 ^ η Y c^ 〇q2 0, R6 [Formula 6] M+ In Formula 6 and Formula 8, in the group consisting of column groups, 6 represents an alkyl group and can be specified The ground is represented by any of the following: a methyl group, a tribromomethyl group, and a QaQ2, each of which is methyl, ethyl, propyl, and butyl. It means that the wire (4) (four) is composed of the lower_cut. Yue and κ+. Any one selected from the group: Li+, Na+ is used to dissolve the agent in the step reaction, and any solvent can be used as long as the solvent can dissolve the vinegar reaction represented by the formula 8. And causing any one of the group I, the agent 2, and the substance 1 to be selected: the latter, the oxime, the ether, the lactone, the guanamine, preferably, the alcohol-based solvent can be combined with the following And any one of them is used: dichlorobenzene, chlorine/structure == selected from the group consisting of toluene, tetrahydrogen, di-W-amine, ethyl chloride, acetonitrile, but the invention is not intended to be limited to such solvents . Stone 'and combinations thereof, the alcohol-based solvent may be any one selected from the group t of the following alcohols. 201144264 3847lpif · sterol, ethanol, propanol, isopropanol, n-butanol, butanol, side oxygen Butanol, deca-ol, hydrazinol, heptanol, dipentyl alcohol, allyl alcohol, ethoxylated methanol, methoxyethanol, ter-2-propanol, benzyl alcohol, phenylethyl alcohol, ring Hexanol, soil y containing earthen clothes, decyl alcohol, tetrahydrofurfuryl alcohol, tetrahydrool, cyanobutanol, 4,yl-2-butanone, and combinations thereof, the invention is not intended to be limited to such solvents . One + may be selected from the group consisting of NaBH4, LiAlH4, BHa-THF, NaBH4-AlCl3, NaBH4-LiCl, LiAl(〇Me)3, and combinations thereof. The compound represented by Formula 8 and the reducing agent may be used in a molar ratio of 1:1 to 1:5 using a molar ratio of 'and a preferred illusion: 2 to 1:3.5. When the compound represented by Formula 8 and the reducing agent are used in the above molar ratio, the product yield with respect to the amount of the reducing agent to be used may be increased. Specifically, the first reaction may include the steps of dissolving the compound represented by Formula 8 in the above-mentioned solvent in an ice bath, adding a reducing agent to the solution dropwise to prepare a reaction mixture liquid, and flowing the reaction mixture liquid from Remove the ice from the ice and heat and disturb the liquid of the reaction mixture. The stirring process is preferably carried out at 20 ° C to 120 ° C for 2 to 6 hours, and more preferably at 6 (TC to 100 ° C for 3 to 5 hours. When the stirring process is carried out in the above temperature and time range The yield of the product can be increased, and the formation of by-products can be minimized. The reaction of the liquid of the reaction mixture is terminated by quenching to remove the solvent, and then the reaction product is collected. Regarding the method of collecting the reaction product, any can The reaction mixture solution 23 201144264 may be used by a conventional method of removing a solvent and collecting the reaction product, and for example, a recrystallization method may be used, by using a solvent which readily dissolves the obtained compound, and a compound which is aged and disintegrated. A method of curing a mixture of solvents to cure an anti-deer product, a method of extracting a reaction product concentrate with a solvent, or a method of enriching a reaction product. A preferred example of a method of collecting a reaction product that can be used is the following method: a liquid from a reaction mixture The solvent is removed, the residue is dissolved in distilled water, then the solution is acidified to a pH of 5 to 6, and the liquid of the reaction mixture is concentrated and again in the concentrate. The alcohol is added to remove the inorganic salt in the form of a slurry, the residue is filtered, and the filtrate is crystallized using diethyl ether or the like. The compound represented by the formula 8 can be produced by the following steps: an intermediate preparation step: alkoxide and halogenation Reacting to form a dialkoxy group having two alkoxy groups, followed by oxidizing two alkoxy groups of the dialkoxy halide to form a compound represented by the following formula 9; and a continuation step: The compound represented by 9 reacts with an inorganic sulfite to form a compound represented by Formula 8. [Formula 9] Q3~c1-c2-?-〇__r q2 6 In Formula 9, & represents an alkyl group, and Any one selected from the group consisting of: methyl, trimethyl, trigas; ', methyl, dimomethyl, ethyl, propyl, and butyl; and to Q3 Each of them is independently a self-priming atom, and preferably a fluorine atom. 24 201144264 38471pif, a sinter oxide: can be an alkyl halide 'and can be specifically perfluorodecane, dibromodifluorodecane, Permethyl bromide or perchloromethane. _ Γ Γ, in the preparation step 'make the oxide and halide in the alcohol group , in the reaction, and the compound can also be reacted with sulfite oil (Na2 bis = (NaHC03). In addition, the reaction of the second oxy group of the oxy-chemical compound can be obtained by the above-mentioned reaction. A specific example of an oxidizing agent that can be used in the presence of an oxidizing agent is a certified person. 5. In particular, sodium hydrogen sulfite can be used as the inorganic sulfite in the contacting step and the reaction can also be added. After the sodium chloride carbonate (NaHC03) is carried out, when the reductive reaction is carried out using the sub-hydrogen (IV), the compound represented by the formula 8 can be produced by oxidizing the organic sulfonate thus formed. In this case, it can be used. Hydrogen peroxide (Ah), sodium tungstate (NaWO4) or the like is used as the oxidizing agent. The second step includes a process in which a compound represented by the following formula 7 is reacted with a compound represented by the formula 6 in the presence of a basic catalyst, and thereby a compound represented by the following formula 4 is obtained. Further at 25 201144264 •/V/ · · [Equation 7] α5-4χ4ί^0 [Formula 4] M+-. - In Equation 7, 'Ql, Q2, and A each independently represent a dentate:: to = gas atom; and η represents. An integer of up to 5, and preferably any of the quaternary ridges and γ have the same meaning as described above for the compound represented by Formula 1, and the definition will not be repeated. Newumΐί is used as an experimental catalyst by any of the publications of the magazine: triethylamine, diethylamine, _, and diethyl = fine. When the alkaline stimulating agent is used for reflection in the second step, the desired product can be obtained in the reaction, and therefore, the reaction of the second step which can increase the reaction can be carried out in the presence of a solvent, and the composition of the substance The ethnic group t is selected as the solvent: brewing, testing, sputum: each: alcohol, and combinations thereof. Preferably, the solvent may be selected from the group consisting of the lower jaws, the dichloromethyl form, the chloroform, the 26 201144264 38471pif ethyl acetate, and the group of dichloroethane, acetonitrile, hydrazine. In the reaction, the compound represented by Formula 6 and the compound represented by Formula 7 may be used in a molar ratio of 1:1 to 1:3, and preferably i, :u ^ 1丄5 Moer than used. When the compound represented by Formula 6 is reacted with the compound represented by Formula 7 in the above molar ratio, the two compounds can be 'completely consumed, and thereby the reaction efficiency can be increased. Further, the compound represented by Formula 6 in the reaction may be used in a molar ratio of 1:1 to 1:4, and preferably used in a molar ratio of 1:1 1 to 1.2. When the compound of the formula 6 is used in a reaction with a basic catalyst in the above molar ratio, the reaction time can be accelerated and the removal of any residual basic catalyst can be made easier. The second step reaction may specifically include a process of dissolving a compound represented by Formula 6 and a basic catalyst in a solvent, and stirring the mixture at an elevated temperature to add a compound represented by Formula 7 dissolved in a solvent to In the compound, and then the resulting mixture was stirred. The stirring process is preferably carried out at a temperature of from 40 ° C to 120 ° C for 5 to 6 hours' and more preferably at 6 Torr. (: to 9 (2 to 3 hours at TC temperature.) When the stirring process is carried out in the above temperature and time range, the product yield can be increased, and by-product formation can be minimized. Quenching is terminated to remove the solvent, and the reaction product is crystallized after the passage of P. Thus, the compound represented by Formula 4 can be obtained. Regarding the crystallization method, as long as the method removes the solvent from the liquid of the reaction mixture and crystallizes the reaction product. A common method, any method can use 27 201144264 WI f ▲ free / storm & without limitation. However, preferably, the reaction mixture can be washed, then the organic layer is separated to remove the solvent, using the column layer The residue is separated, and then the reaction product is dried in a vacuum to obtain a reaction product. The second step includes a process of subjecting a compound represented by Formula 4 shown above to a compound represented by the following Formula 5, and Thus, a compound represented by the following formula 1 is obtained. "4 R] A + Z - In the formula 5, Z- represents any one selected from the group consisting of the following ions: (〇S02CF3>, (〇 S〇2c4F9)·, (os〇2c8Fi7)_, (N(CF3)2)- '(N(C2F5)2)- . (N(C4F9)2) > (C(CF3)3). > (C(C2F5)3)-, (C(C4F9)3)-, F-, ci-, Br-, I_, BF4_, AsF6_, and PF0-; A+ represents an organic relative ion. Due to the specific definition of this organic relative ion It is the same as the definition given to the compound represented by Formula 1, and therefore will not be repeatedly described. The compound represented by Formula 4 and the compound represented by Formula 5 may be used in a molar ratio of 1:1 to 5:1. The m:i to 3:1 molar ratio is used, and even more preferably at a molar ratio of 1:1 to 2: 1. When the compound is used in the above molar ratio, the reaction treatment time can be minimized, and Any side reaction caused by the use of an excessive amount of the reaction product can be suppressed. The substitution reaction can be carried out by using a recrystallization method, or a solvent (good solvent) which satisfactorily dissolves the salt can be used and poorly dissolved 28 201144264 38471pif a method in which a mixture of a salt solvent (poor solvent) is used to cure and recover a salt obtained from the reaction, and a method of extracting with a solvent, or concentrating and recovering the obtained salt Preferably, the compound is dissolved in dioxane and water to form two layers, which can then be stirred to effect a substitution reaction. In the case of using such a two-layer reaction, it is advantageous in that No other method is required to separate the product. Stirring can be carried out for 2 to 6 hours, and can also be carried out for 2 to 4 hours. When the reaction is carried out in the above time range, the product yield can be maximized. In the case of the compound represented by Formula 1, the compound represented by Formula 1 can be produced by an efficient and simple method. The photoresist composition according to another embodiment of the present invention contains the photoacid generator represented by the above formula 1. The photoresist composition is based on the composition of a conventional photoresist composition, and thus the description about the photoresist composition will not be repeated herein. The photoacid generator of the present invention can generate an acid upon exposure, the acid having a low diffusivity, a short diffusion distance, and exhibiting an appropriate acidity so that the line width roughness (LWR) characteristics can be improved, and it is used in a process. The dissolution in a solvent such as pure water can be controlled. Further, the method of producing the photoacid generator of the present invention can produce the above photoacid generator via an efficient and simple method. [Embodiment] Hereinafter, the present invention will be described in detail by way of examples, so that the present invention can be easily carried out by those having ordinary skill in the art. However, the invention can be carried out with various modifications and modifications, and the scope of the invention is not limited to the examples described herein. Synthetic photoacid generator [Synthesis example 1 of photoacid generator] Synthesis of adamantyl-3,3-difluoro-3-reverse-propyl ether diphenylmethylphenyl salt (Adamantyl-3,3- Difluoro-3-sulfo-propyl ether diphenyl methylphenyl sulfonium salt) (Step 1) As shown in the following Reaction Scheme 1, 83 g (0·376 mol) 1,1-difluoro-3-methyl in an ice bath Sodium oxy-3-oxopropane monosulfonate was dissolved in 160 ml of methanol (Me〇H) as a solvent and 12 liters of tetrahydrofuran (THF). 44 g (1.16 mol) sodium hydride (NaBH4) was slowly added dropwise to the solution to prepare a reaction mixture liquid. After the dropwise addition was completed, the reaction mixture liquid was removed from the ice bath and heated to 60X:. While maintaining the temperature, the reaction mixture liquid was stirred for about 4 hours. The reaction mixture liquid was quenched with distilled water, and then the solvent was removed. The crude reaction mixture was dissolved in distilled water, and the solution was acidified to 5 to 6 with concentrated hydrochloric acid. The acidified reaction mixture was concentrated, and methanol was again added thereto. The slurry thus obtained was filtered to remove inorganic salts. The filtrate obtained by removing the slurry was washed twice with hexane, and the sterol layer was again concentrated, followed by crystallization using diethyl ether. 201144264 A white solid obtained by crystallization was dried in vacuo, and the structure of the compound was determined by 1H-NMR. Thus, 5 g (0.346 mol, yield 95%) of 1,1-di U-pyridyl-1-pyristyl sodium was obtained. ^-NMR (D20): (ppm) 2.38 (t, 2H), 4.18 (t, 2H) [Reaction Scheme 1]
+ MeOH+ MeOH
NaBH4 THF, MeOH ΟNaBH4 THF, MeOH Ο
NaO^C^y〇Me 關於參考’可藉由諸如以下反應流程2之反應生成上 文所示之1,1-二氟-3-曱氧基-3-側氧基丙烷-1-磺酸鈉。 [反應流程2] 於OMe + CF2Br2NaO^C^y〇Me With respect to the reference '1,1-difluoro-3-indolyl-3-oxopropane-1-sulfonic acid shown above can be produced by a reaction such as the following Reaction Scheme 2 sodium. [Reaction Scheme 2] in OMe + CF2Br2
OMe KHS05OMe KHS05
ΟΜθΟΜθ
Ν32§2〇4 NaHC03 80CΝ32§2〇4 NaHC03 80C
N32S2〇4 NaHC03 MeOHN32S2〇4 NaHC03 MeOH
H2〇2 r Na2W〇4H2〇2 r Na2W〇4
Na03SNa03S
OMe (步驟2)如以下反應流程3中所示,將步驟i中生成 之20公克(0.101莫耳)1,1-二氟-3-經基丙烧-1-績酸納 及23毫升(0.165莫耳)三乙胺(EtsN)溶於400毫升乙 酸乙酯中,且在80°C下攪拌由此獲得之溶液。將溶於200 毫升乙酸乙酯中之20公克(0.1172莫耳)氯代金剛烷 31 201144264 38471pif (adamantyl chloride )逐滴添加至上述溶液來製備反應混合 物,加熱並攪拌反應混合物2. 5小時。 反應混合物之反應完成後,以200毫升之1N鹽酸溶 液洗滌反應混合物三次,且以200毫升之10%碳酸鈉溶液 洗滌反應混合物一次。分開反應混合物之有機層’且移除 溶劑。 藉由使用矽膠的管柱層析來分開反應產物,且在真空 中乾燥反應產物。經乾燥之反應產物進行1H-NMR ’且結 構得以確定。由此,獲得30公克(產率80%)的由以下反 應流程3中之式A表示的3-(金剛烧-1-基氧基)-1,1-二氟 丙 烧 _1_ 石夤 酸 鹽 (3-(adamantan-l-yloxy)-l,l-difluoropropane- 1-sulfonic acid salt) 〇 h-NMR (二曱亞颯-忒,四曱基矽烷):(ppm) 1.67-1.98(m,15H),2.45(t,2H),4.52(t,2H) [反應流程3]OMe (Step 2) As shown in the following Reaction Scheme 3, 20 g (0.101 mol) of 1,1-difluoro-3-pyrimidin-1-ylic acid and 23 ml (step) produced in the step i are obtained. 0.165 mol of triethylamine (EtsN) was dissolved in 400 ml of ethyl acetate, and the thus obtained solution was stirred at 80 °C. 5小时。 The reaction mixture was heated and stirred for 2.5 hours. The reaction mixture was stirred and stirred. After completion of the reaction of the reaction mixture, the reaction mixture was washed three times with 200 ml of a 1N hydrochloric acid solution, and the reaction mixture was washed once with 200 ml of a 10% sodium carbonate solution. The organic layer of the reaction mixture was separated' and the solvent was removed. The reaction product was separated by column chromatography using tannin and the reaction product was dried in vacuo. The dried reaction product was subjected to 1H-NMR' and the structure was determined. Thus, 30 g (yield 80%) of 3-(adamant-1-yloxy)-1,1-difluoropropanzein-1_glycide represented by the formula A in the following Reaction Scheme 3 was obtained. (3-(adamantan-l-yloxy)-l,l-difluoropropane- 1-sulfonic acid salt) 〇h-NMR (dioxin-indole, tetradecyl decane): (ppm) 1.67-1.98 (m) , 15H), 2.45 (t, 2H), 4.52 (t, 2H) [Reaction Scheme 3]
—L 〜0H ◦ f2 (步驟3)如以下反應流程4中所示,將步驟2中生成 之8. 5公克(0. 0255莫耳)3-(金剛烷-1-基氧基)-1,卜二 氟丙烷-1-磺酸鹽及10公克(〇·0234莫耳)由以下反應流 程4中之式B表示的三氟曱烷磺酸二苯基曱基苯基錡鹽溶 32 201144264 於 100 宅升一氯曱炫·( dichloromethane/methylene chloride,MC)及1〇〇毫升水中,形成具有兩層之反應混 合物。劇烈攪拌反應混合物3小時以使反應(兩層反應) 得以進行。 當反應混合物之授拌完成時,採集有機層之等分試樣 以藉由19F-NMR來檢查反應進程。當反應完成時,收集有 機層,且移除溶劑。使用二氣甲烷作為良溶劑且己烷作為 不良溶劑來洗滌由此獲得之漿液,且由此獲得固體。在減 壓下乾燥固體’且由此獲得由以下反應流程4中式B表示 之化合物。由此,獲得13. 3公克(產率94.3%)的由以; 反應流程4中之式C表示的金剛烷基_3,3-二氟_3_續基_ 丙醚二苯基曱基苯基銕鹽’且結構藉由ih_NMr而得以確 定。 h-NNIR (氣仿-ί/3 ’ 四曱基石夕烧):(ppm) 1 98(m 15H),2.45(t,2H),2.47(s,3H),4.76(t,2H),7.48(d,2H)’ 7.65-7.76(m, 12H) ’ ’ [反應流程4]— L 〜0H ◦ f2 (Step 3) As shown in the following Reaction Scheme 4, the 8.5 gram (0. 0255 mol) 3-(adamantan-1-yloxy)-1 was produced in the step 2. , difluoropropane-1-sulfonate and 10 g (〇·0234 mol) of triphenylsulfonylbenzene triphenylsulfonyl sulfonate salt represented by formula B in the following Reaction Scheme 4 32 201144264 A reaction mixture having two layers was formed in 100 liters of methylene chloride (MC) and 1 liter of water. The reaction mixture was stirred vigorously for 3 hours to allow the reaction (two-layer reaction) to proceed. When the mixing of the reaction mixture was completed, an aliquot of the organic layer was taken to examine the progress of the reaction by 19F-NMR. When the reaction is complete, the organic layer is collected and the solvent is removed. The thus obtained slurry was washed using dioxane as a good solvent and hexane as a poor solvent, and thereby a solid was obtained. The solid is dried under reduced pressure' and thereby the compound represented by the formula B in the following Reaction Scheme 4 is obtained. Thus, 13.3 g (yield 94.3%) of the adamantyl_3,3-difluoro_3_reverse-propyl ether diphenyl fluorenyl group represented by the formula C in Reaction Scheme 4 was obtained. Phenyl sulfonium salt' and the structure was determined by ih_NMr. h-NNIR (gas imitation - ί/3 ' 四曱基石夕烧): (ppm) 1 98 (m 15H), 2.45 (t, 2H), 2.47 (s, 3H), 4.76 (t, 2H), 7.48 (d,2H)' 7.65-7.76(m, 12H) ' ' [Reaction Scheme 4]
33 201144264 38471pif 合成樹脂 [樹脂之合成實例l] 以1:1:1 (33份:33份:33份)之莫耳比添加3一雙環 [2· 2. 1]庚-5-婦-2-基-3-經基丙酸第三丁醋、丙稀酸卜甲 基金剛烷酯(丙烯酸2-甲基-2-金剛烷酯)以及γ_丁内酯 丙烯酸甲酯(丙烯酸2~側氧基四氫呋喃_3_基酯),且將^ 相當於反應單體之總質量的3倍之1,4 -二噁烷用作聚合溶 劑。使用以單體之總莫耳量計為4莫耳%之比例的偶氮二異 丁腈作為引發劑’且使系統在65。(:下反應16小時。 反應之後,使用正己炫•使反應溶液沈殿,且在真空中 乾燥沈殿物。由此,獲得由下式10表示的樹脂。以沈澱物 形式獲得之共聚物具有8, 500之重量平均分子量。 [式 10]33 201144264 38471pif Synthetic Resin [Synthesis Example 1 of Resin] Add 3 double rings [2· 2. 1] G-5-Wo-2 in a molar ratio of 1:1:1 (33 parts: 33 parts: 33 parts) - Benzyl-3-propionic acid tert-butyl vinegar, propyl methacrylate (2-methyl-2-adamantyl acrylate) and γ-butyrolactone methyl acrylate (2-o-acrylic acid acrylate) Tetrahydrofuran_3_yl ester), and 1,4 -dioxane which is equivalent to 3 times the total mass of the reaction monomers is used as a polymerization solvent. Azobisisobutyronitrile in a ratio of 4 mol% based on the total molar amount of the monomer was used as the initiator' and the system was at 65. (The reaction was carried out for 16 hours. After the reaction, the reaction solution was immersed in a solution, and the sediment was dried in a vacuum. Thus, a resin represented by the following formula 10 was obtained. The copolymer obtained as a precipitate had 8, Weight average molecular weight of 500. [Formula 10]
製備光阻劑 [比較實例1] 將在樹脂之合成實例1中獲得的100重量份由式10 表示之樹脂、4重量份三氟曱磺酸三苯基鎳作為光酸產生 劑(PAG),以及0.5重量份氫氧化四甲銨作為鹼性添加劑 34 201144264 (BASE)溶於丨,_重量份丙二醇乙咖中,隨後將 溶液經由〇‘ 2微米膜過渡器過渡。&此,製備出光阻溶液。 使用旋轉器將光阻溶液塗覆於基板上,且在11〇它下 乾燥光阻溶液90秒以形成厚度為〇. 20微米之膜。使用ArF 準分子雷射步進器(透鏡孔徑數:〇.78)使由此形成之膜 曝光,且在110它下熱處理90秒。使用2. 38重量%氫氧化 四曱銨水溶液使由此形成之膜顯景》4〇秒,隨後絲並乾燥 所述膜。由此,形成光阻圖案。 ^ [實例1] 以與比較實例1中相同之方式製備光阻溶液,其中例 外為使用3重量份的在合成實例1中生成且由反應流程4 中之式C表示的金剛烷基-3, 3-二氟-3-磺基-丙醚二笨基 甲基本基疏鹽作為光酸產生劑。評估光阻溶液之性質。 [實例2] 以與比較實例1中相同之方式製備光阻溶液,其中例 外為使用5重量份的在合成實例1中生成且由反應流程4 中之式C表示的金剛燒基_3, 3-二氟-3-續基-丙謎二笨基 曱基苯基錶鹽作為光酸產生劑。評估光阻溶液之性質。 . [實例3] 以與比較實例1中相同之方式製備光阻溶液,其中例 外為使用7重量份的在合成實例1中生成且由反應流程4 中之式C表示的金剛烷基-3, 3-二氟-3-磺基-丙醚二苯基 曱基苯基銕鹽作為光酸產生劑。評估光阻溶液之性質。 評估比較實例1及實例1至3之性質,諸如敏感度、 35 201144264 38471pif 解析度以及LWR,結果呈現於下表1中。 在LWR之情況下,觀測顯影之後所形成之〇. 10微米 線寬/間隔(line-and-space,L/S)圖案之圖案粗糙度,且 將LWR之改良程度分成數目為1至5的等級,而比較實 例1中所獲得的圖案等級為丨。較大數目指示較佳LWR特 徵。 在敏感度之情況下,將線寬1:1下形成〇. 1〇微米線 寬/間隔(L/S)圖案的曝光量指定為最佳曝光量,且將當 敏感度設置為等於最佳曝光量時,藉由成像所獲得之最小 圖案尺寸指定為解析度。 [表1] 樹脂(100 重量份) PAG ( 1 ) (重量份) base(2) (重量份) 敏感度(毫焦 /平方公分 解析度 (奈米) LWR 實例 1 樹脂之合 成實例1 3 0.5 17 70 4 實例 2 樹脂之合 成實例1 5 0.5 16 80 3 實例 3 樹脂之合 成實例1 7 0.5 13 70 3 比較 實例 1 樹脂之合 成實例1 3 0.5 15 90 2 (1 )光酸產生劑(PAG ) 實例1至3:在合成實例1中生成且由反應流程4中 之式C表示的金剛烷基_3, 3_二氟_3_磺基_丙醚二苯基曱 基苯基锍鹽 36 201144264 38471pif 比較實例1 :三苯基銃三氟甲磺酸鹽 (triphenylsulfonium triflate ) (2)驗性添加劑(BASE):氫氧化四甲銨 藉由將脂環族環引入光酸產生劑之陰離子中而生成 用於實例1至3中之光酸產生劑(pAG)。與現有三氟甲磺 酸鹽(triflate)或九氟丁磺酸鹽(nonaflate)光酸產生劑相 比,維持酸度類似於三氟甲績酸鹽之酸度的此光酸產生劑 具有低的酸擴散率及短擴散距離。因此,此光酸產生劑具 有適於實現較精細L/S圖案的特徵。 當研究表1之性質分析結果時,與現有三氟甲磺酸鹽 型光酸產生劑相比,所述光酸產生劑在LWR及解析度方 面展示優越效能。當用光照射時,將芳環引入光酸產生劑 之陰離子巾甚至在透明度方面亦展現極佳之結果。一旦自 光酸產生舰线且所賴赌料形式軸,則芳環根 本不會影響翻度’且視芳環以、而定,祕能夠控制酸 之擴散率及擴散距_有利絲。,所述光酸產生 展不不同於現有光酸產生劑的特徵。 雖然本㈣[卩較佳實施_露如上,織並非用 明i任何熟習此技藝者,在不脫離本發明之精神 1内’ s可作些許之更動與潤飾,因此本發 I㈣當錢社申請專鄕圍所界定者料。保農 【圖式簡單說明】 益。 川、 【主要元件符號說明】 M. 〇 37Preparation of Photoresist [Comparative Example 1] 100 parts by weight of the resin represented by Formula 10 obtained in Synthesis Example 1 of the resin, and 4 parts by weight of triphenyl nickel trifluorosulfonate were used as the photoacid generator (PAG), And 0.5 parts by weight of tetramethylammonium hydroxide as a basic additive 34 201144264 (BASE) dissolved in hydrazine, _ parts by weight of propylene glycol, and then the solution was transitioned through a 〇' 2 micron membrane transition. & This prepares a photoresist solution. The photoresist solution was applied to the substrate using a spinner, and the photoresist solution was dried under 11 Torr for 90 seconds to form a film having a thickness of 20 μm. The film thus formed was exposed using an ArF excimer laser stepper (number of lens apertures: 〇.78), and heat treated at 110 for 90 seconds. The thus formed film was visualized using a 3.8 wt% aqueous solution of tetrahydric ammonium hydroxide for 4 seconds, followed by silking and drying the film. Thereby, a photoresist pattern is formed. ^ [Example 1] A photoresist solution was prepared in the same manner as in Comparative Example 1, except that 3 parts by weight of adamantyl-3 which was produced in Synthesis Example 1 and represented by Formula C in Reaction Scheme 4 was used. 3-Difluoro-3-sulfo-propyl ether dipyridylmethyl-based salt as a photoacid generator. Evaluate the properties of the photoresist solution. [Example 2] A photoresist solution was prepared in the same manner as in Comparative Example 1, except that 5 parts by weight of the adamantyl group 3, 3 which was produced in Synthesis Example 1 and represented by the formula C in Reaction Scheme 4 was used. - Difluoro-3-nextyl-propanoid dipyridyl phenyl phenyl salt as a photoacid generator. Evaluate the properties of the photoresist solution. [Example 3] A photoresist solution was prepared in the same manner as in Comparative Example 1, except that 7 parts by weight of adamantyl-3 which was produced in Synthesis Example 1 and represented by Formula C in Reaction Scheme 4 was used. 3-Difluoro-3-sulfo-propyl ether diphenylmercaptophenyl sulfonium salt as a photoacid generator. Evaluate the properties of the photoresist solution. The properties of Comparative Example 1 and Examples 1 to 3 were evaluated, such as sensitivity, 35 201144264 38471 pif resolution, and LWR, and the results are presented in Table 1 below. In the case of LWR, the pattern roughness of a 10 μm line-and-space (L/S) pattern formed after development was observed, and the degree of improvement of LWR was divided into numbers of 1 to 5. Grade, and the pattern level obtained in Comparative Example 1 is 丨. A larger number indicates a better LWR feature. In the case of sensitivity, the exposure amount of 〇. 1〇 micron line width/interval (L/S) pattern is specified as the optimum exposure amount, and the sensitivity is set equal to the optimum. At the time of exposure, the minimum pattern size obtained by imaging is specified as the resolution. [Table 1] Resin (100 parts by weight) PAG (1) (parts by weight) base (2) (parts by weight) Sensitivity (min/joule resolution (nano) LWR Example 1 Synthesis of resin 1 3 0.5 17 70 4 Example 2 Synthesis of Resin Example 1 5 0.5 16 80 3 Example 3 Synthesis of Resin Example 1 7 0.5 13 70 3 Comparative Example 1 Synthesis of Resin Example 1 3 0.5 15 90 2 (1) Photoacid Generator (PAG) Examples 1 to 3: adamantyl_3,3-difluoro_3_sulfo-propyl ether diphenylmercaptophenyl sulfonium salt 36 which was produced in Synthesis Example 1 and represented by the formula C in Reaction Scheme 4. 201144264 38471pif Comparative Example 1: Triphenylsulfonium triflate (2) Ingredient additive (BASE): tetramethylammonium hydroxide is introduced into the anion of the photoacid generator by introducing an alicyclic ring The photoacid generator (pAG) used in Examples 1 to 3 was formed. The acidity was similar to that of the existing triflate or nonaflate photoacid generator. The photoacid generator of the acidity of the trifluoromethane acid salt has a low acid diffusivity and a short diffusion distance. Therefore, the light The generator has characteristics suitable for achieving a finer L/S pattern. When studying the results of the analysis of the properties of Table 1, the photoacid generator is in LWR and compared to the existing triflate type photoacid generator. The superior performance is demonstrated in terms of resolution. When irradiated with light, the anion towel which introduces the aromatic ring into the photoacid generator exhibits excellent results even in terms of transparency. Once the ship line is generated from the photoacid, the accompaniment form axis, Then, the aromatic ring does not affect the turning degree at all, and depending on the aromatic ring, it is possible to control the diffusion rate of the acid and the diffusion distance, which is not different from the characteristics of the existing photoacid generator. Although this (4) [卩 is better implemented _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Specialized by the definition of the area. Supporting farmers [simple description of the schema] benefits. Chuan, [main symbol description] M. 〇37
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JP5970926B2 (en) * | 2011-04-13 | 2016-08-17 | 住友化学株式会社 | Salt, resist composition and method for producing resist pattern |
JP6079217B2 (en) * | 2011-12-28 | 2017-02-15 | Jsr株式会社 | Photoresist composition, resist pattern forming method, and acid generator |
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US8945814B2 (en) * | 2012-09-15 | 2015-02-03 | Rohm And Haas Electronic Materials Llc | Acid generators and photoresists comprising same |
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