TW201144252A - Spattering target of aluminum oxide-zinc oxide group - Google Patents

Abstract

The invention provides a spattering target of aluminum oxide-zinc oxide group, the spattering target being characterized in containing at least one of Pb and Cd. The spattering target of aluminum oxide-zinc oxide group of this invention has a high sintering density even if it is sintered at a low sintering temperature such as 1300 DEG C, for example. A high temperature sintering of the raw material powder is not necessary for obtaining a high sintering density and therefore less load is applied onto a sintering furnace. As a result an early deterioration of the sintering furnace can be prevented, a volatilization of such component as zinc from the raw material powder can be suppressed, and a film having a predetermined composition can be easily formed. The spattering target of the present invention has a small specific resistance and less spattering reduction rate.

Description

201144252 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a kind of oxidation-smelting-oxidation system, which can be manufactured even at low temperature, and is high-density and suitable for one. Formation_ [Prior Art] Oxygen-doped riding type (4) ((10) The film (_ is widely used in the field of flat display 11, hard panel, solar cell, etc. as a transmissive material (10). However, IT 〇 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主 主The material "is oxidized! Lu_Zinc oxide-based material (AZG) or oxidized zinc oxide-based material (_ attracts attention. The material formed by the zinc oxide doped oxidation oxide (Al2〇3) is colorless. Transparent and highly conductive. ΑΖ0貘 is generally formed by sputtering using an AZ lanthanum sputtering target. In such sputtering, the sputtering is performed on the surface of the target. Prominence of nodule This becomes / ·, earthing electricity (arcing) or splashing, sometimes it is difficult to stabilize the film formation. Also, the arc is the cause of the particles in the sputtering chamber (3 卯 叶In the case of floating in the chamber, it is attached to the film to reduce the quality of the AZ film. Therefore, in the development of the dead button, it is required to suppress the occurrence of nodules, etc. This technology is aimed at increasing the density of the film. Increasing the speed of strontium iron 322881 4 201144252 degrees and achieving efficient film formation 'seeking to reduce the specific resistance of the sputtering target. Even GZ0, there is the same situation as the above ΑΖ0. GZ0 system sputtering meeting the above requirements In the case of the target, for example, a gallium oxide-oxidized sintered body sputtering target containing 20 to 500 ppm by mass of alumina and a sintered density of 5·55 g/cm 3 or more (Patent Document No.) has been proposed, or contains an oxidation error of 20 to a gallium oxide-zinc oxide-based sintered body sputtering target having a sintered density of 5,000 g/cm 3 or more (Patent Document 2), etc. However, the sputtering target systems described in Patent Document 1 and Patent Document 2 are Formed by CIP (cold iS0Static press) After the raw material powder, if it is not sintered, it will not become a high density. CIP is a special method, and it is not widely used, and its apparatus is expensive. If this method is performed, there is a problem that the manufacturing cost of the sputtering target increases. [PRIOR ART DOCUMENT] Patent Document 1: Japanese Patent No. 4054054 Patent Document 2: Japanese Patent No. 4098345 [Invention] The object of the present invention is to obtain a zinc oxide splash. Qiangan, which can inhibit the formation of nodules, arcs or particles, has a high sintered density and a low specific resistivity, and can be manufactured at low cost without using special equipment. (Means for Solving the Problem) The present inventors have found that if a zinc oxide-based sputtering target contains Pb or Cd, or both, the age can be made; eip can also have a high sintered density, 322881 5 201144252 invention. That is, the present invention which achieves the above object is an alumina-zinc oxide-based splashing target characterized by containing at least one of Pb and the like. The preferred mode of the foregoing alumina-zinc oxide sputtering target is: Pb and Cd only contain Pb, and the content thereof is 4 to 2000 mass ppin; and Pb and Cd only contain cd, and the content is 3 to 2000 mass. Ppm; the total content of each of Pb and Cd' is 4 to 2000 ppm by mass. In the above alumina-zinc oxide-based sputtering target, the concentration of alumina is preferably from 0.1 to 10% by mass. Further, another invention is a method for producing an alumina-oxidation-based sputtering target, characterized in that a mixed powder containing an alumina powder, a zinc oxide powder, and a powder containing at least one of Pb and Cd is used. sintering. (Effects of the Invention) The alumina-zinc oxide-based sputtering target of the present invention does not require the use of a special device such as cip, can be manufactured at low cost, and has a high sintered density. In particular, the money-bonding system of the present invention has a high sintered density even if the sintering temperature is low, even if it is, for example, about 1300 °C. For example, when the oxidation temperature is 0.5% by mass, even if the sintering temperature is 1300 ° C, the sintered density becomes 5.54 g/cm 3 or more. Therefore, it is not necessary to sinter the raw material powder at a high temperature in order to obtain a high sintered density, so that the burden on the sintering furnace is small, and early deterioration of the sintering furnace can be avoided. In addition, since it is possible to suppress volatilization of components such as zinc derived from the raw material powder during sintering, the composition of the target material can be easily adjusted, and a film having a predetermined composition can be easily formed by sputtering. . Further, the specific resistance of the oxidized residual zinc oxide sputtering target is small. Further, the oxidation of the present invention in Lu, 6 322881 201144252 zinc oxide sputtering target system can suppress the formation of nodules due to the high density of the target, and can also suppress the generation of electric arc or particles. Therefore, stable sputtering can be performed, and the sputtering rate reduction rate can be reduced. [Embodiment] <Oxide-oxidation-based money-mineral light> The gallium oxide-zinc oxide-based sputtering target of the present invention is characterized by containing at least one of Pb and Cd. When the sputtering target of the present invention contains only Pb in Pb and Cd, the content of Pb is preferably 4 to 2000 ppm by mass, more preferably 5 to 1000 ppm by mass, still more preferably 5 to 500 ppm by mass, particularly preferably 5 to 100 ppm by mass. When the sputtering target of the present invention contains only Cd in Pb and Cd, the content of Cd is preferably from 3 to 2,000 ppm by mass, more preferably from 3 to 1,000 ppm by mass, still more preferably from 3 to 500 ppm by mass, particularly preferably 3 to 100 ppm by mass. When the sputtering target of the present invention contains both Pb and Cd, the total content of Pb and Cd is preferably 4 to 2000 ppm by mass, more preferably 5 to 1000 ppm by mass, still more preferably 5 to 500 by mass. The ppm is particularly preferably 5 to 100 ppm by mass. When the gallium oxide-oxidation system sputtering target contains Pb or Cd or Pb and Cd, a high sintered density is obtained particularly when it is contained in the above-mentioned contents. In particular, a gallium oxide-zinc oxide-based sputtering target containing at least one of Pb and Cd as described above can obtain a high sintered density even when the mixed powder is sintered at a low temperature. The gallium oxide-oxidation system sputtering target is generally produced by sintering a mixed powder obtained by mixing gallium oxide (Ga2〇3) powder with zinc oxide (ZnO) powder. At this time, regarding the sintered density of the sintered body, 7 322 881 201144252 generally, the higher the sintering temperature, the larger the sintered density, and if the sintering temperature is lowered, the sintered density is lowered. For example, when the concentration of the gallium oxide is 5% by mass, the sintering density is 5.60g/, even if the mixed powder does not contain Pb and Cd. When the sintered body is not less than 1300 ° C, the sintered powder having a sintered density of about 5.53 g/cm 3 can be obtained only when Pb and Cd are not contained in the mixed powder. On the other hand, when the mixed powder containing at least one of Pb and Cd in the above content is sintered at a high temperature of 1500 ° C or sintered at a low temperature of 1300 ° C, a sintered density of 5.60 g can be obtained. Sintered body of /cm2 or more. When sintering is performed at a high temperature of 1500 ° C or higher, the load applied to the sintering furnace is large, and the deterioration of the sintering furnace becomes intense. Further, when the sintering is carried out at such a high temperature, the components such as zinc are volatilized from the raw material powder, and the composition of each component changes, so that a target having a predetermined composition may not be formed. As described above, the sputtering target of the present invention can obtain a high sintered density even at a low temperature of 1300 ° C, so that the burden on the sintering furnace can be reduced, and the deterioration of the sintering furnace can be reduced. Further, the sputtering target of the present invention can suppress the volatilization of components such as zinc derived from the mixed powder during sintering by the low-temperature sintering as described above, so that a predetermined composition can be easily obtained. Such an effect can be obtained by adding either Pb or Cd. Moreover, this effect can be obtained even if Pb and Cd are coexistent. The optimum amount of Pb and Cd at this time is not significantly different from that of Pb or Cd alone. From the above discussion, it is considered that for the above effects, Pb and Cd act on the gallium oxide-zinc oxide sputtering target by the same mechanism. In addition, even if 8 322881 201144252 is described later in the oxidation of zinc oxide, brittle and splashing (4), the Pb* ed gallium-oxidation system is similarly developed by the same mechanism as the oxidized zinc oxide-based sputtering. Activator. And the specific gallium oxide-zinc oxide-based sputtering of the gallium oxide concentration system: the temple limit, generally 0.1 to 10 quality ", preferably 0.5 to 5.7 quality =. . The concentration of right gallium oxide in this range can be an effective substitute for the material of ιτ〇 \ and \ can be suitable for the effects caused by (7) and (7). Here, the gallium oxide concentration means a value which is marked in terms of Ga2〇3. The gallium oxide-zinc oxide-based sputtering target of the present invention comprises at least one of yttrium, Ga, Zn, and ytterbium of (7) and an element derived from unavoidable impurities. As described above, the density of the sputtering target of the present invention is such that the higher the sintering temperature, the higher the temperature, and the higher the gallium oxide concentration, the lower the density. With respect to the density of the sputter target of the present invention, when the gallium oxide concentration is 0.5% by mass, the sintering at 1200 Å is 5.49 to 5 54 g/cm 3 , which is 13 〇 (the sintering of rc is 5.60 to 5.61 g / Cm3, to 1400. (: The sintering is 5.60 to 5.61g / cm3 ' to 15 〇〇. (: the sintering is 5. 60 to 5. 61g / cm3. When the concentration of gallium oxide is 3. 0. When the mass is %, it is 1200. (: The sintering is 5.23 to 5.27g/cm3, which is 13〇〇. The sintering is 5.47 to 5.50g/cro3, and the sintering at 1400C is 5.48 to 5. 51克/厘米之间。 The sintering at 1500 ° C is 5.12 to 5. 16g / cm3, when the concentration of galvanic oxide is 5. 5 to 5. 54g / cm3. 130 (the sintering of TC is 5.27 to 5.29 g/cm3, the sintering at 1400 ° C is 5.28 to 9 322881 201144252 5.35 g / cm 3 , and the sintering at 1500 ° C is 5.40 to 5. 50 g / cm 3 . The sputtering target contains Pb or Cd, or Pb and Cd, and is particularly contained in the above-mentioned content, so that the specific resistivity is low. The density of the sputtering target is also the same as the sintered density. The higher the temperature, the higher the density, and the oxygen The higher the gallium concentration, the lower the density. The specific resistivity of the sputtering target of the present invention is 1.00 % 〇 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至〇xi〇-3q · cm or so. Further, the sputtering target of the present invention contains Pb or cd, or Pb and Cd, and in particular, the sputtering rate reduction rate is contained by the content shown above. The sputtering rate reduction rate of the sputtering target of the present invention is about 0.5% by mass for the gallium oxide concentration and about 19 to 23% for the sintering temperature of 13 Å. Further, regarding the reduction rate of the sputtering rate The measurement method is described in detail in the examples. The gallium oxide-zinc oxide-based sputtering target of the present invention is produced, for example, by the same method. When a sputtering target containing only Pb in Pb and Cd is produced, the content of the letter pb is obtained. In a manner of 5 to 1 〇00 mass 卯m, a powder containing gallium (Ga^) powder and zinc oxide (Zn 〇) powder are mixed to form a powder, and the mixed powder is sintered. Pb& cd + only contains the record of c, so that the content of Cd becomes 3 to _ mass_, and the 対Gd is read and oxygen Pour the powder into a pure powder and mix it into a powder to form a mixed powder. When the pulverization of % and cd is produced, the total content of Pb and the content of Cd will be the quality, and will be contained. The pb powder is mixed with the cd-containing "gallium oxide powder and zinc oxide powder to prepare a mixed powder, and the mixed powder is poured in 10 322881 201144252. When the concentration of gallium oxide in the sputtering target is set to 0.5 to 5% by mass, in each case t, the oxidation recording powder is mixed so that the concentration of gallium oxide is from 0.5 to 5.7 mass%. The mixed powder is cFj" The powder containing Pb may be any of Pb metal powder, Pb oxide powder, and other Pb compound powder. Examples of the oxide of Pb include PbO, Pb〇2, and Pb3〇4. The cd-containing powder may be any of cd metal powder, Cd oxide powder, and other cd compound powder. The oxide of Cd may, for example, be CdO. The granules of the Pb-containing powder, the Cd-containing powder, the gallium oxide powder, and the zinc oxide powder are generally measured by a BET (Brunauer-Emmett-Teller) method. The mixed powder is obtained by mixing the above respective powders in, for example, a ball mill or the like. The method of sintering the mixed powder is not particularly limited, but a method of forming the molded body into a molded body and sintering it in a sintering furnace is generally employed. The mixed powder may be directly molded into a molded body, or may be formed by adding a binder to the mixed powder as needed. As the binder, a binder which is used in obtaining a molded body by a known powder metallurgy method, such as polyvinyl alcohol or the like can be used. λ, the obtained shaped body can be degreased by a method employed in a known powder metallurgical towel as needed. The forming method can also be applied to the method employed in known powder metallurgy towels. The tree, the vaporized gallium-zinc oxide system of the present invention can be manufactured to a high density without using a special molding method as in (10). 322881 11 201144252 A molded body obtained by sintering is obtained to obtain a sintered body. The sintering system can be used in a sintering furnace employed in a known powder metallurgy method. The sintering environment is preferably a gas containing oxygen. Specifically, the atmosphere is first, and examples thereof include oxygen, a mixed gas of nitrogen and oxygen, a mixed gas of argon and oxygen, and a mixed gas of nitrogen and argon and oxygen. The oxygen concentration in the gas containing oxygen is preferably from 5 to 100% by volume. Further, it is also possible to sinter while blowing oxygen into the atmosphere. As described above, the gallium oxide-zinc oxide-based sputtering target of the present invention can form a high density even if it is not sintered at a high temperature of 1500 °C. For example, when the concentration of the gallium oxide is 0.5% by mass, the sintered density of 5.60 g/cm3 or more can be obtained even if the sintering is performed at a low temperature of 1300 °C. <Alumina-Zinc Oxide Sputtering Target> The alumina-zinc oxide sputtering target of the present invention is characterized by containing at least one of Pb and Cd. When the sputtering target of the present invention contains Pb only in Pb and Cd, the content of Pb is preferably 4 to 2000 ppm by mass, more preferably 5 to 1000 ppm by mass, still more preferably 5 to 500 ppm by mass, particularly preferably 5 Up to 100 ppm by mass. When the sputtering target of the present invention contains only Cd in Pb and Cd, the content of Cd is preferably from 3 to 2,000 ppm by mass, more preferably from 3 to 1,000 ppm by mass, still more preferably from 3 to 500 ppm by mass, particularly preferably Up to 100 ppm by mass. When the sputtering target of the present invention contains both Pb and Cd, the total content of Pb and Cd is preferably 4 to 2000 ppm by mass, more preferably 5 to 1000 ppm by mass, still more preferably 5 to 500 ppm by mass. Especially preferably 5 to 100 ppm by mass ° 12 322881 201144252 If the alumina zinc oxide-based splashing concentrate contains % or cd, or Pb and Cd 'specially contained in the above-mentioned contents, it will be high ^ 〇,, '. After _ degrees. In particular, the above-mentioned content contains at least one of % and (7) of oxygen = :: zinc oxide 彡, 崎35' 卩卩 卩卩 以 以 以 以 以 以 m m m m m m m m m m 般 般 般 般 般 般 般 般 般 般 般 般 般It is produced by sintering a mixed alumina (Ahoo powder and zinc oxide (Zn 〇) powder). At this time, regarding the sintered density of the sintered body, generally, the higher the sintering temperature, the higher the sintered density. When the sintering temperature is lowered, the sintered density is lowered. When the oxidation concentration in the mixed powder is $2 〇 mass%, if it is sintered at a high temperature of 1500X: even if the mixed powder does not contain Pb and Cd, A sintered body having a sintered density of 5.54 g/cm3 or more is obtained. However, when sintered at a low temperature of 1,300⁄4, the mixed powder does not contain pb and cd, and only a sintered body having a sintered density of about 5 47 g/cm 3 is obtained. And a sintered density of 5.54 g/cm2, which is obtained by sintering at a high temperature of 1500 ° C or at a low temperature of i30 (rc). The above sintered body. If it is higher than 1500 °C When the temperature is sintered, the burden on the sintering furnace is large. The deterioration of the sintering furnace is fierce. When the sintering is performed at such a high temperature, the components such as zinc are volatilized from the raw material powder, and the composition of each component changes. A light-weight material having a pre-twisted composition is formed. As described above, the ruthenium plating system of the present invention can reduce the load applied to the sintering furnace and reduce the sintering even if 130 (TC can be sintered at a low temperature for low-temperature sintering). Further, the sputtering target of the present invention can suppress the volatilization of components such as zinc derived from the mixed powder during sintering by the low-temperature sintering as described above, so that it is easy to obtain the effect of the composition of 322881 13 201144252. Adding Pb and adding c, even if Pb and Cd i are left, can be obtained. This and Cd are two to the effect. At this time, it is appropriate to discuss from this, and it is considered that for +, cd There is no difference in big ducks. The same machine of zinc-based lexicon X:: Oxidation of oxy-gallium-zinc oxide system... Also with oxidation: oxygen =, mine _ similarly shows the addition of Pb and Cd = chemical: System d is a gallium oxide-zinc oxide sputtering target and Aluminium, and the same mechanism to play the role., & zinc zinc money plating dry no special: j ===: system: _ oxidative concentration system == concentration in __, can become effective The effect of the needle on the needle is the result of this and W. Here, the oxidation morning refers to the value marked with (4) 3 conversion. Any of the inventions oxidized ^ zinc oxide splash _ is composed of at least elements of Pb and Cd ::::,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, - the same effect as the zinc oxide system. The oxidation of the present invention is oxidized, for example, in the following manner, when Pb and ed are only contained in Pb and ed, so that the amount of 3 is 5 to 1000 mass ΡΡ ίπ In a manner, a powder containing Pb powder 322881 201144252 zinc oxide (10)) is mixed to prepare a mixed powder. When the content of the product contained in % and the money is 3 to the mass of the round: 乍, 二,太二,: the end is mixed with the alumina powder and the zinc oxide powder: the sintered powder is finally sintered. When manufacturing a ship handle containing Pb and Cd =, the total amount of Pb and the content of Cd is 5, and the method of deleting the quality, the powder containing pb and the private and oxygen containing silk Cd Zinc powder is mixed* to make a mixed powder, and UM is private. When the concentration of the oxidized sulphur in the machine record is set to 5 to 6.0 罝%, in each of the above cases, the degree of oxidation is made to be 0·5 to 6.00. It is sufficient to mix the oxidized powder to make a mixture. The Pb-containing powder may be any of Pb metal powder, Pb oxide powder, and other Pb compound powder. Examples of the oxide of pb include Pb〇, Pb〇2, and Pb^. The powder containing Cd may be any of cd metal powder, Cd oxide powder, and other Cd compound powder. The oxide of Cd may, for example, be CdO. The granules of the granules of the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules, the granules. The mixed powder is obtained by mixing the above respective powders in, for example, a ball mill or the like. The method of sintering the mixed powder is not particularly limited, but a method of forming the molded body into a molded body and sintering it in a sintering furnace is generally employed. Mixing 322881 15 201144252 The powder can be directly formed into a shaped body. It can also be formed by adding a binder to the mixed powder as needed. As the binder, a binder which is used in obtaining a molded body in a known powder metallurgy method, such as polyethylene glycol or the like can be used. Further, the obtained forming vessel can be carried out by a method known in the known powder metallurgy method as needed. The forming method can also be applied to the method employed in the known powder metallurgy method. That is, the oxidized zinc oxide line of the present invention can be manufactured to a high density without using a special forming method such as CIP. The obtained body is obtained by sintering to obtain a sintered body. The sintering system can be used in a (4) junction furnace made by a known powder metallurgy towel. The sintering environment is preferably a gas containing oxygen. Specifically, it is based on the atmosphere, and may be a mixture of oxygen, a mixed gas of oxygen and oxygen, a mixed gas of argon and oxygen, and a mixture of nitrogen and oxygen. Oxygen in a gas containing oxygen is 5 to test. Further, it is also possible to blow oxygen into the atmosphere at a level of 15tn!^, and the oxidized zinc oxide of the present invention (4) can form a high density even if it is not sintered at 0CM. For example, when the oxidation amount is 0.5% by mass, the sintered density of 5.54 g/cm3 or more is obtained even if it is sintered at a low temperature of 130 (the low temperature of rc. The above-mentioned gallium oxide-zinc oxide sputtering target system is composed of the right-handed system in the system. , + & Oxidation Recording and Oxidation Deterioration h #成之料料, Oxygen-Zinc Oxide is a sputtering target composed of Pb, which is composed of f-depleted zinc oxide, but as described above, Zinc oxide, such as pb, is reduced by oxidation, and the wire is in the gallium oxide-hole 5 emulsified zinc system. Similarly, it is 322881 16 201144252. Therefore, it is considered to be composed of gallium oxide, aluminum oxide and zinc oxide. In the sputtering target containing Pb or the like, the same effect as that of the above-described gallium oxide-zinc oxide sputtering target can be obtained. Further, Pb and Cd in the mixed powder or in the sputtering target. The chemical compositions of Ga, A1, and the like can be measured by the ICP method, etc. In the following examples, the concentrations of Pb, Cd, Ga, and A1 in the mixed powder and the Pb and Cd in the sputtering target were confirmed. The concentrations of Ga, A1, etc. are the same. [Examples] First, the measurement method used in the examples will be described. Density and Relative Density> The relative density of the deposited plating is determined according to the Aruchimedis method. Specifically, the air weight of the sputtering target is divided by the volume (the weight of the water in the sputtering target/measured temperature) The density was calculated from the water specific gravity, and the value of the density with respect to the theoretical density p (g/cm3) obtained according to the following formula (X) was taken as the relative density (unit: %). The results are shown in Table 1.

Ci/100 C2/IOO , , Ci/100 ρ = -+--1-----1-- , P 1 P 2 P ' , J (1) (in the formula (X), 匕 to Ci respectively represent the target The content (% by weight) of the constituent material of the sintered body, PI to Pi represents the density (g/cm3) of each constituent material corresponding to 匕 to Ci.) < Specific resistivity> The specific resistivity is based on JIS. The four-probe method of K7194 was measured using Loresta GP MCP-T610 (manufactured by Mitsubishi Chemical Corporation). 17 322881 201144252 < Sputtering rate reduction rate> Sputtering having a diameter of 4 inches (inch) and a thickness of 5 mm was not bonded to a backing plate, and sputtering treatment was carried out in accordance with the sputtering conditions described below. This treatment was carried out at an input power amount of 3 W/cm 2 . <sputtering conditions> Apparatus: DC magnetron clock device, exhaust system cryopump, rotary pump, vacuum degree: 3xlO_6Pa sputtering pressure: 0. 4Pa oxygen partial pressure: lxl (T3Pa The film was formed by sputtering treatment under the above conditions for 30, 60, 120, and 180 minutes, and the film thickness at each time point was measured. The horizontal axis was used as the treatment time, and the vertical axis was used as the film thickness to form a curve. The slope of the tangent of the aforementioned curve at the end of the sputtering and the sputtering rate Ri at the start of sputtering and the rate of re-plating at the end of the ore reduction, respectively, and the rate of reduction of the upset rate is obtained according to the following formula; When the plating is terminated, it means that the thickness of the invaded part of the material (the deepest part excavated by the money mine) becomes 1 mm. [Sputter rate reduction rate] = [(Ri-Re) / Ri] xl〇〇 <Gas Oxide-Zinc Oxide Sputtering Target> [Comparison of the effects of the contents of Pb and Cd and the effects of the sintering temperature] (Reference Examples GP1 to GP9) The contents of Pb are shown in Table 1. In the manner of numerical value, Pb〇 is mixed in such a manner that the content of gallium oxide (Ga2〇3) is 0.5% by mass. Powder and 322881 201144252 Oxidation (Ga2〇3) powder and zinc oxide (ZnO) powder, placed in a 20 liter polypropylene crucible' by a ball mill to make a mixed powder. The medium is a Zr〇2 sphere with a diameter of 10 mm. The average particle diameters of the powder, the oxidized recording powder, and the zinc oxide powder measured by the BET method are (iv) (iv), 〇12 β m, and 0.35 ym, respectively. In the mixed powder, the diluted powder is added to the mixed powder to a mass of 4 %聚乙骑6质量% 'Use the chyle to fully immerse the polyethylene glycol in the powder and pass it through the mesh of 5.5 and mesh. Fill the mixed mold with the mixed polyethylene powder into the mold for stamping. Uniaxial forming was carried out by pressing 5 〇〇Kg/cm 2 for 60 seconds. The obtained molded body was placed in a sintering furnace having a capacity of about lm 3 and sintered at 1200 c for 8 hours in the atmosphere. The heating rate was 1 〇〇〇 C / In the hour, the cooling rate is 10 0 C / hr. The 474x305xl2mmt gallium oxide-zinc oxide sputtering target is produced by the sintered body obtained by the cutting process, and the diameter is 4 吋 and thickness in the measurement of the sputtering rate reduction rate. 5mm. For this gallium oxide-oxygen The zinc-based sputtering target was measured for the density by the above method. The results are shown in Table 1. (Comparative Example G1) A gallium oxide-zinc oxide system was produced in the same manner as in the example gpi except that the PbO powder was not used. Sputtered dry. For this gallium oxide-zinc oxide sputtering target, the density was measured by the above method. The results are shown in Table 1. (Reference examples GP10 to GP18) 19 322881 201144252 In addition to making the content of Pb into Table 2 In the method of the numerical value, the pb powder and the gallium oxide (Ga2〇3) powder and the zinc oxide (Zn〇) powder are mixed so that the content of gallium oxide (Ga2〇3) is 0.55% by mass. The powder was mixed and the sintering temperature was 1303⁄4, and the gallium oxide-zinc oxide system was produced in the same manner as in the example Gpi. With respect to this gallium oxide-zinc oxide-based sputtering target, the density, the specific resistivity, and the sputtering rate reduction rate were measured by the above methods. The results are shown in Table 2. (Comparative Example G2) The sintering temperature was 13 Torr except that the PbO powder was not used. In the same manner as in Example GP1 except for ruthenium, gallium oxide-zinc oxide-based sputtering was produced. For this gallium oxide-zinc oxide-based splatter, the density, specific resistivity, and sputtering rate reduction rate were measured by the above methods. The results are shown in Table 2 (Reference Examples GP19 to GP27), except that the content of Pb is changed to the value shown in Table 3, and the content of gallium oxide (Ga2〇3) is 〇. 5 mass%. Gallium oxide-oxidation was carried out in the same manner as in Example GP1 except that the pb powder and the gallium oxide (GaA3) powder and the zinc oxide (Zn〇) powder were mixed to prepare a mixed powder 'and the sintering temperature was 14 Torr. Zinc sputter target. For this gallium oxide-zinc oxide-based splash, the density was measured by the above method. The results are shown in Table 3. (Comparative Example G3) Gallium Oxide-Zinc Oxide Sputtering was performed in the same manner as in Example GP1 except that the PbO powder was not used and the sintering temperature was i40 (TC). The sputtering target was measured, and the density was measured by the above method. The results are shown in Table 3. (Reference Examples GP28 to GP36) In addition to the method of making the content of Pb into the value shown in Table 4, in order to make gallium oxide (Gaz〇) 3) The content of 5% by mass is mixed with pb 〇 powder, gallium oxide (Gaz〇3) powder and zinc oxide (Zn 〇) powder to prepare a mixed powder, and the sintering temperature is 15 〇 (other than Tc). The gallium oxide-zinc oxide-based sputtering target was produced in the same manner as in Example GP1. The density of the gallium oxide-zinc oxide-based sputtering target was measured by the above method. The results are shown in Table 4. (Comparative Example G4 The gallium oxide-zinc oxide sputtering target was produced by the same method as the example GP14 except that the Pb powder was not used and the sintering temperature was 15 〇 (rc). , the density was measured by the above method. It is shown in Table 4. (Reference Examples GC1 to GC9) In addition to the use of CdO powder in place of Pb〇 powder, the content of cd became the value shown in Table 5, and the content of gallium oxide (Ga2〇3) was 5 In the same manner as in the example Gpi, a gallium oxide-zinc oxide-based sputtering target was produced in the same manner as in the example Gpi, except that the mixture of the cd powder and the gallium oxide (Ga2〇3) powder and the zinc oxide (ZnO) powder was mixed. The average particle diameter of the Cd〇 powder used by the BET method was 〇34^m. 21 322881 201144252 degrees for this gallium oxide-zinc oxide sputtering target. The results are shown in Table 5. The method was determined to be dense (Reference Examples GC10 to GC18) except that CdO powder was used instead of m powder 'to make the content of Cd a value of Γ' and the content of gallium oxide (4) 3) was made into u : / Kun σ Cd0 powder and gallium oxide (Ga 2 ) 〇3) Powder and zinc oxide were mixed to prepare a mixed powder 'and the sintering temperature was (10) generation, ^ is the same as in the example GP1 to produce an oxidation record - oxidized system for this gallium oxide - zinc oxide Record, measure the density 'specific resistivity and splashing by the above method Rate reduction rate. The results are shown in Table 6. (Reference Examples GC19 to GC27) In addition to the substitution of the powder of the Pb0 powder so that Cd = the numerical value, the gallium oxide (the content of _ was changed to =) By mixing (10) powder with gallium oxide (Ga2〇〇 powder and oxidized η) powder to prepare a mixed powder, and making the sintering temperature the same, ^ is the same as in the example GP1 to produce gallium oxide. The results of this gallium oxide-zinc oxide sputtering target are shown in Table 7. The density was measured by the above method (Reference Examples GC29 to GC36), except that the cd 〇 powder was used in place of the Pb0 powder so that the content of Cd became a numerical value, and the content of gallium oxide (Ga2 〇 3) was made in the middle. : 5 amount of 'mixed CdO powder and gallium oxide (GhO3) powder and zinc oxide 322881 22 201144252 (ZnO) powder to make a mixed powder, so that the sintering temperature is 15 〇 (rc other than the same as the embodiment GP1 Gallium oxide-zinc oxide-based sputtering was produced. For this gallium oxide-zinc oxide-based clock, the density was measured by the above method. The results are shown in Table 8. (Reference examples GPC1 to GPC9) In addition to the use of CdO powder Pb 〇 powder, in such a manner that the content of Pb and cd is the value shown in Table 9, and Pb 〇 powder and Cd 〇 powder and gallium oxide (Ga 2 〇 3) are mixed so that the content of gallium oxide is 0.5% by mass. The powder was mixed with zinc oxide (Zn 〇) powder to prepare a mixed powder, and the sintering temperature was 1300 ° C. The gallium oxide-zinc oxide-based sputtering was produced in the same manner as in Example GP1. The zinc-based sputtering target was measured for density, specific resistivity, and sputtering rate reduction rate by the above method. The results are shown in Table 9. As is apparent from Table 1, when the sintering temperature was 120 (TC, the Pb was increased by the addition of Pb. The effect of the density, but because of Since the sintering temperature is low, the density does not become large as compared with the case where the sintering temperature is 130 (TC or more. As is apparent from Table 2, the sintering temperature is 130 (the titer is increased by adding pb when TC is added), and the specific resistivity is also With regard to the sputtering text ~> rate 'when the % addition amount is 1〇PPm or less, if the Pb addition amount is more fixed = 3: 7 addition amount exceeds Μ, 'the rate is about - the result is known to contain 'pb Moreover, the reduction rate of the dry material obtained by sintering at 1300 ° C is low, and the money for stabilization can be carried out. From Table 3, it can be seen that when the sintering temperature is 14 ,, 322881 23 201144252 is dried by adding this. The density of the material is increased to about the theoretical density. As is clear from Table 4, when the sintering temperature is uoot, a large density can be obtained without adding pb, but the density is further increased by adding Pb. As is clear from Table 8, when Cd was added, the same effects as those in the case of adding Pb shown in Tables 1 to 4 were obtained. As is apparent from Table 9, both Pb and Cd were added and 130 (when TC was sintered, it was also obtained. Pb shown in Table 2 was separately added and was 1300. (: The same effect as the effect at the time of sintering. [Gal oxide Comparison of the effects by the amount] (Reference Example GP37 to GP42) In addition to the content of Pb and the content of gallium oxide (GazO3) as the values shown in Table 1 'mixed Pb powder and gallium oxide (Ga2〇) 3) A powdery powder and a oxidized (ZnO) powder were used to prepare a mixed powder, and a sintering temperature was 13 〇〇C, and a gallium oxide-zinc oxide-based sputtering target was produced in the same manner as in Example GP1. A zinc oxide-based sputtering target was measured for density and relative density by the above method. The results are shown in Table 10. Further, the relative densities of the examples GP12 and GP14 were also measured, and the results are shown in Table 10 (Comparative Examples P1 to P2), except that the content of Pb was changed to the value shown in Table 10, and gallium oxide was not used. (Ga2〇3) powder "mixed PbO powder and zinc telluride (Zn) powder to prepare a mixed powder" and the sintering temperature was 1300 ° C, and the same procedure as in Example GP1 was carried out to prepare an oxidized sputter dry. . 322881 24 201144252 For this oxidation system, the density and relative density were measured by the above method. The results are shown in Table 1. (Comparative Example 1) Oxide-based sputtering was carried out in the same manner as in Example GP1 except that only the PbO powder and the gallium oxide (Ga2〇3) powder were used, and only the zinc oxide powder was used and the degree of burning was 13 Gm. target. For this zinc oxide-based sputtering target, the density and the relative progress were measured by the above method. The results are shown in Table 1. (Comparative Examples G5 to G7) In addition to the use of the PbO powder, a powder of cerium oxide (10) was mixed with galvanic oxide (10) powder to form a mixed powder so that the content of gallium oxide became a value not shown in Table 10, and Let the sintering temperature be (4). Further, in the same manner as in Example GP1, a gallium oxide-oxidation system sputtering target was produced. For this zinc oxide-based sputtering, the density was measured and the density was measured by the above method. The results are shown in the table. (Refer to GC37 to GC42) Mixing (10) powder with gallium oxide (GaA) powder, except that Cd〇 powder is used in place of Pb0 powder so that the content of Cd and the content of gallium oxide (Ga.) become the values shown in Table u. A mixed powder was prepared with zinc oxide (Zn〇) powder and the sintering temperature was 13 () (Rc, except that the gallium oxide-oxidized sputtering target was produced in the same manner as in the example fertilizer. For this gallium oxide- Oxygen lining _, the density and relative density were measured by the above method. The results are shown in Table u. Further, the relative density of the 322881 25 201144252 GC12 and GC14 was also measured, and the results are shown in Table 11. Comparative Examples C1 to C2) In addition to using CdO powder in place of Pb 〇 powder, so that the content of cd became the value shown in Table 11, without using gallium oxide (Ga2〇3) powder, mixing CdO powder with zinc oxide (ZnO) The powder was mixed to prepare a mixed powder, and the sintering temperature was 1300 ° C. The rest of the method was the same as in the example Gpi to prepare an oxidized sputtering target. For the zinc oxide-based radical drying, the density was determined by the above method. Relatively dense The results are shown in Table 11. As is clear from Table 10, when the content of GazO3 is increased, sintering is difficult, and the degree of dryness tends to decrease. However, even if Pb is added, the tendency is suppressed. The high Ga 2 〇 3 content was also sufficiently high in density. As is apparent from Table 11, when Cd was added, the same effect as the effect of adding Pb shown in Table 1 得到 was obtained. Comparison of effects] (Comparative Examples GA1 1 to GA1 2) In addition to the use of the AhO3 powder in place of the Pb〇 powder, the content of A1 was changed to the value shown in Table 12, and the content of gallium oxide (Ga2〇3) was further increased. In the form of 0.5% by mass, the mixed powder of the Ah3 powder and the gallium oxide (Ga2〇3) and the zinc oxide (ZnO) powder was mixed to form a mixed powder, and the sintering temperature was 13 〇〇t: In the same manner, a gallium oxide-zinc oxide-based sputtering target was produced. The average particle diameter of the A12〇3 powder used by the BET method was 0.33 // m. 322881 26 201144252 For this gallium oxide-zinc oxide splash The target was plated and the density was measured by the above method. (Comparative Example GZrl to GZr2) In addition to the use of Zr〇2 powder in place of pb〇 powder, so that the content of Zr becomes the value shown in Table 12, the content of gallium oxide (Ga2〇3) is made zero. · 5 mass % of the method, mixing Zr 〇 2 powder with gallium oxide (Ga 2 〇 3) and zinc oxide (ZnO) powder to prepare a mixed powder, and the sintering temperature is 13 ° ° C, the rest of the system and the example GP1 In the same manner, a gallium oxide-zinc oxide sputtering target is produced. The average particle diameter of the Zr〇2 powder used by the BET method was 0.22 μm. 〇 For this gallium oxide-oxidation system, the density was measured by the above method. The results are shown in Table 12. (Comparative Examples GIn1 to GIn2) In addition to the use of Im 〇 3 powder in place of the Pb 〇 powder, so that the content of In became the value shown in Table 12, the content of gallium oxide (Ga 2 〇 3) was 0.5 mass ° / . In the same manner, a mixed powder of (1) powder, gallium oxide (Ga2〇3) and zinc oxide (ZnO) powder was mixed to prepare a mixed powder, and the sintering temperature was changed, and the gallium oxide-zinc oxide was produced in the same manner as in Example GP1. Sputter target. The average grain of the Ι ^ powder used in the BET method is 0.13 // m. For this gallium oxide-zinc oxide-based sputtering target, the measurement was carried out by the above method. The results are shown in Table 2. Preparation (Comparative Examples GSnl to GSn2) In addition to the use of Sn〇2 powder in place of pb〇 powder, the content of Sn was changed to the value shown in Table 12 of 322881 27 201144252, in order to make the content of gallium oxide (Ga2〇3) In a mode of 0.5% by mass, a mixture of Snn 2 powder and gallium oxide (Ga 2 〇 3 ) and zinc oxide (ZnO) powder was used to prepare a mixed powder, and the sintering temperature was 13 Torr. Other than ruthenium, a gallium oxide-zinc oxide-based sputtering target was produced in the same manner as in Example GP1. The average particle diameter of the Sn 〇 2 powder measured by the BET method is 0.14 / zm. For this gallium oxide-zinc oxide-based sputtering target, the density was measured by the above method. The results are shown in Table 12. 5质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量质量The % method was prepared by mixing Sb2〇3 powder with gallium oxide (Ga2〇3) and zinc oxide (ZnO) powder to prepare a mixed powder, and sintering temperature was 13 Torr, and the same procedure as in Example GP1 was carried out. Gallium oxide-zinc oxide sputtering target. The average particle diameter of the Sb2〇3 powder used by the BET method was 0·24 v m 〇 For this oxidized threo-oxidized rheology splash, the density was measured by the above method. The results are shown in Table 12. 5质量质量。 [Comparative Example GBil to GBi2) In addition to the use of Bh 〇 3 powder in place of the pb 〇 powder, so that the content of μ is shown in Table 12, and the content of gallium oxide (Ga2 〇 3) is 0.5.罝% of the method 'mixed BhCb powder with gallium oxide (Ga2〇3) and zinc oxide (ZnO) powder to prepare a mixed powder, and the sintering temperature was 13 ' except that the others were oxidized in the same manner as in Example GP1. Gallium_oxidation 322881 28 201144252 is a sputtering target. The average particle size of the Bh 3 powder used was determined by the BET method to be 0.37 // m. For this oxidation-oxidation word, the density was measured by the above method. The results are shown in Table 12. (Comparative Example GCul to GCu2) In addition to the use of CuzO powder in place of Pb powder "to make the content of Cu into the value shown in Table 12, the content of gallium oxide ((2 2 3) was 0.5% by mass). In the same manner, the mixed powder of the CmO powder and the gallium oxide ((2) and the zinc oxide (ZnO) powder were mixed, and the sintering temperature was 丨3 〇〇, and the others were oxidized in the same manner as in Example GP1. The gallium-zinc oxide-based sputtering target. The average particle diameter of the CuzO powder used by the BET method is 0.24 // m. For the gallium oxide-zinc oxide-based splashing ore, the density is determined by the above method. The results are shown in Table 12. (Comparative Examples GNil to GNi2) In addition to the use of NiO powder in place of the pb powder, the content of Ni was set to the value shown in Table 12, and the gallium oxide was removed...) When the content was 5% by mass, the Ni 〇 powder and the gallium oxide and the zinc oxide (ZnO) powder were mixed to prepare a mixed powder, and the sintering temperature was η (10). Other than the ruthenium, the oxidation was carried out in the same manner as in Example GP1. Gallium _ oxidized words are dry and dry. The average particle diameter measured by the β ΕΤ method was 〇·μ // m. * For this gallium oxide-zinc oxide-based ore I, the density was measured by the above method. The results are shown in Table 12. 322881 29 201144252 From the table 12 It can be seen that among the various metals added, those having a large effect on the sintered density show only Pb and Cd, and other metals are small and even 'anti-effects.' <Aluminum oxide-zinc oxide splash Plating target> (Examples API to AP10) Pb 〇 powder and alumina (Al2〇3) powder and zinc oxide (Zn) were mixed so that the content of Pb and alumina (A12〇3) became the values shown in Table 13. 〇) The powder is placed in a 2G liter polypropylene bottle, and II is mixed by a ball mill to make a mixed powder. The medium is a Zr 〇 2 ball with a diameter of 10 〇 min. The pb 〇 powder, alumina powder and zinc oxide powder used. The average particle size measured by the BET method is 0·24/zm, 〇·33 ym, and 〇. In the mixed powder, the amount of polyvinyl alcohol diluted to 4% by mass is added to the mixed powder. Spider and fully immerse the polyethylene into the powder, through the 5.5 mesh The mixed powder mixed with polyvinyl alcohol was filled in a die for pressing, and uniaxially formed (10) seconds by pressing at 5 〇〇 Kg/cm 2 . The obtained molded body was placed in a sintering furnace having a capacity of about lm 3 . The atmosphere is sintered at 1200 C for 8 hours, the heating rate is i〇〇°c/hour, and the cooling rate is 100 ° C / hour. By sintering the obtained sintered body, a 474×305×12 mm oxidation-zinc oxide splash is produced. In the measurement of the sputtering rate reduction rate, the diameter is 4 吋 and the thickness is 5 mm. For this oxidation-zinc oxide-based sputtering target, the density was measured by the above method. The results are shown in Table 13. Further, in Example Ap3, Example AP4 and Comparative Example A2, the sputtering rate reduction rate was measured by the above method 30 322881 201144252. The results are shown in Table 13. (Comparative Examples A1 to A5) Alumina (ai2〇3) powder and zinc oxide (ZnO) were mixed in such a manner that the content of alumina (Ah〇3) was changed to the value shown in Table 13 except that the PbO powder was not used. An alumina-zinc oxide-based splashing dry was produced in the same manner as in the example API except for the powder. For this alumina-zinc oxide-based sputtering target, the density was measured by the above method. The results are shown in Table 13. (Examples AC1 to AC10) In addition to the method of making the content of Cd and alumina (Ah〇3) into the values shown in Table 14, 'mixing CdO powder with alumina (Ah〇3) powder and zinc oxide (ZnO) privately. 'In a 20-liter polypropylene bottle, a mixed powder was prepared by mixing with a ball mill, and the rest was made in the same manner as in the example Αρι! g zinc oxide is splashed or dried. The average particle diameter of the (10) powder used by the β ΕΤ method was 〇 34. ^. For this oxidized zinc oxide ruthenium plating &, the density was measured by the above method. Actually [and Example AC4 is the sputtering rate reduction rate by the above method. The results are shown in Table 13. It can be seen from Table 13, that the content of . ^ ^ ^ ^ Al2 〇 3 is increased, it is difficult to sinter, the target The tendency to reduce the degree of enthalpy, Eclipse & ancient η people 抑制 by adding Pb, that is, suppressing its tendency, even if it is the same as A12 〇 3, you can, * 玄 ... ..., f / T pieces to full height Density. In addition, it can be seen that the rate of reduction of the sputtering rate is Pb added '曰 &> ^ The succession of the system can be added by force: An oxidation (4) of the system 322881 31 201144252 It can be seen from Table 14 that when adding Cd, The same effects as those obtained when Pb was added as shown in Table 13 were obtained. (Examples AP11 to APio were obtained in such a manner that the content of Pb became the value shown in Table 15, and further, it was oxidized (ai2〇3). a method of mixing the pb 〇 powder with the oxidized (Al 2 〇 3) powder and the oxidized (Zn 〇) powder in a manner of 2. Further, the molded body was sintered at the sintering temperature shown in Table 15, and the oxidation was carried out in the same manner as in the example API to produce a oxidized-oxidized lining. The density of the aluminum hydroxide (Ai2〇3) was changed to 2, In the mass % manner, the Cd 〇 powder and the alumina (Ah 〇 3) powder and the zinc oxide (Zn 〇 粉末 powder) were mixed, and the molded body was sintered at the sintering temperature shown in Table 16 in the same manner as in Example AC1. In the aluminum oxide-zinc oxide-based sputtering target, the density was measured by the above method. The results are shown in Table 16. From Table 15, it is known that 1200X:, 140 (Tc) And the effect of adding pb in the same manner as in the sintering of 130 ° C at the time of sintering of 150 ° C. From Table 16, it can be seen that when sintered at 1200 C, 1400 ° C, and 1500 〇c, The effect of adding μ is the same when sintering at 13 ° C. 322881 32 201144252 -士 [Table 1 ]

Pb content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative Example G1 0 0. 5 1200 5. 481 Reference example GP1 2 0. 5 1200 5. 482 Reference example GP2 3 0. 5 1200 5. 482 Reference example GP3 5 0. 5 1200 5. 493 Reference example GP4 8 0. 5 1200 5. 504 Reference example GP5 10 0. 5 1200 5. 516 Reference example GP6 100 0. 5 1200 5 530 Reference example GP7 500 0. 5 1200 5. 533 Reference example GP8 1000 0. 5 1200 5. 542 Reference example GP9 5000 0. 5 1200 5. 510 [Table 2]

Pb content (ppm) Ga2〇3 content (mass 90 sintering temperature (°e) density (g/cm3) specific resistivity (Ω · cm) sputtering rate reduction rate (%) Comparative example G2 0 0_ 5 1300 5. 534 3. 13E-03 25. 1 Reference example GP10 2 0. 5 1300 5. 548 3. 13E-03 25. 1 Reference example GP11 3 0_ 5 1300 5: 579 3.13E-03 24. 7 Reference example GP12 5 0· 5 1300 5. 601 1·77E-03 22. 1 Reference example GP13 8 0. 5 1300 5. 602 1.04E-03 19.4 Reference example GP14 10 0. 5 1300 5. 606 1.04E-03 19. 1 Reference example GP15 100 0. 5 1300 5. 604 1.04E-03 19. 0 Reference example GP16 500 0. 5 1300 5. 604 1.05E-03 19. 1 Reference example GP17 1000 0. 5 1300 5. 602 1.08E-03 19. 0 Reference example GP18 5000 0. 5 1300 5. 581 1.64E-03 19. 1 33 322881 201144252 [Table 3]

Pb content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative Example G3 0 0. 5 1400 5. 584 Reference example GP19 2 0. 5 1400 5. 584 Reference example GP20 3 0. 5 1400 5. 590 Reference example GP21 5 0. 5 1400 5. 604 Reference example GP22 8 0. 5 1400 5. 608 Reference example GP23 10 0. 5 1400 5. 608 Reference example GP24 100 0. 5 1400 5 608 Reference example GP25 500 0. 5 1400 5. 608 Reference example GP26 1000 0. 5 1400 5. 608 Reference example GP27 5000 0. 5 1400 5. 600 [Table 4]

Pb content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative example G4 0 0. 5 1500 5. 608 Reference example GP28 2 0. 5 1500 5. 608 Reference example GP29 3 0. 5 1500 5. 608 Reference example GP30 5 0.5 1500 5. 608 Reference example GP31 8 0. 5 1500 5. 608 Reference example GP32 10 0. 5 1500 5. 608 Reference example GP33 100 0. 5 1500 5. 608 Reference example GP34 500 0. 5 1500 5. 608 Reference example GP35 1000 0. 5 1500 5. 608 Reference example GP36 5000 0. 5 1500 5. 608 34 322881 201144252 -- [Table 5]

Cd content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative Example G1 0 0. 5 1200 5.481 Reference example GC1 2 0. 5 1200 5. 481 Reference example GC2 3 0 5 1200 5. 506 Reference example GC3 5 0. 5 1200 5. 516 Reference example GC4 8 0. 5 1200 5. 521 Reference example GC5 10 0. 5 1200 5. 526 Reference example GC6 100 0. 5 1200 5. 538 Reference example GC7 500 0. 5 1200 5. 541 Reference example GC8 1000 0. 5 1200 5. 540 Reference example GC9 5000 0. 5 1200 5. 530 [Table 6]

Cd content Ga2〇3 content Sintering temperature density specific resistivity sputtering rate (ppm) (mass 90 rc) (g/cms) (Ω · cm) Reduction rate (%) Comparative example G2 0 0. 5 1300 5. 534 3.13 E-03 25. 1 Reference example GC10 2 0. 5 1300 5. 582 2.91E-03 23. 5 Reference example GC11 3 0. 5 1300 5. 601 1.80E-03 21. 9 Reference example GC12 5 0. 5 1300 5. 604 1.62E-03 20. 9 Reference example GC13 8 0. 5 1300 5. 606 1.53E-03 20. 5 Reference example GC14 10 0. 5 1300 5. 608 1.50E-03 20. 2 Reference example GC15 100 0. 5 1300 5. 608 1.44E-03 20. 1 Reference example GC16 500 0. 5 1300 5. 608 1.35E-03 19. 9 Reference example GC17 1000 0. 5 1300 5. 608 1.37E-03 19. 7 Reference example GC18 5000 0. 5 1300 5. 586 1.74E-03 21. 0 35 322881 201144252 [Table 7]

Cd content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative Example G3 0 0. 5 1400 5. 584 Reference Example GC19 2 0. 5 1400 5. 589 Reference Example GC20 3 0. 5 1400 5. 603 Reference example GC21 5 0. 5 1400 5. 608 Reference example GC22 8 0. 5 1400 5. 608 Reference example GC23 10 0. 5 1400 5. 608 Reference example GC24 100 0. 5 1400 5 608 Reference example GC25 500 0. 5 1400 5. 608 Reference example GC26 1000 0. 5 1400 5. 608 Reference example GC27 5000 0. 5 1400 5. 593 [Table 8]

Cd content (ppm) Ga2〇3 content (% by mass) Sintering temperature (°C) Density (g/cm3) Comparative example G4 0 0. 5 1500 5. 608 Reference example GC28 2 0. 5 1500 5. 608 Reference example GC29 3 0. 5 1500 5. 608 Reference example GC30 5 0. 5 1500 5. 608 Reference example GC31 8 0. 5 1500 5. 608 Reference example GC32 10 0. 5 1500 5. 608 Reference example GC33 100 0.5 1500 5. 608 Reference example GC34 500 0. 5 1500 5. 608 Reference example GC35 1000 0.5 1500 5. 608 Reference example GC36 5000 0.5 1500 5.604 36 322881 201144252 •~ [Table 9]

Pb content (ppm) Cd content (ppm) Total of Cd content and Pb content (ppm) GaaOa content (mass « sintering temperature (°C) density (g/cm3) specific resistivity (Ω · cm) sputtering rate reduction rate (%) Comparative Example G2 0 0 0 0. 5 1300 5. 534 3. 13E-03 25. 1 Reference Example GPC1 I 1 2 0. 5 1300 5. 542 2.93E-03 25. 1 Reference Example GPC2 2 2 3 0. 5 1300 5. 575 2. 13E-03 25. 1 Reference example GPC3 3 3 5 0. 5 1300 5. 600 1.73E-03 20. 5 Reference example GPC4 4 4 δ 0. 5 1300 5. 603 1.29E -03 20. 1 Reference example GPC5 5 5 10 0_ 5 1300 5. 605 1.32E-03 19. 1 Reference example GPC6 50 50 100 0.5 1300 5. 607 1.12E-03 19. 3 Reference example GPC7 250 250 500 0_ 5 1300 5. 606 1. 16E-03 19. 1 Reference example GPC8 500 500 1000 0.5 1300 5, 604 1_ 30E-03 18.9 Reference example GPC9 2500 2500 5000 0.5 1300 5. 582 1.72E-03 19. 0 37 322881 201144252 [ Table ίο]

Ga2〇3 content Pb content sintering temperature true density density relative density (% by mass) (ppm) (°C) Cg/cm3) (g/cm3) (g/cm3) Comparative Example 1 0 0 1300 5. 607 5.484 97. 8 Comparative Example P1 0 5 1300 5. 607 5. 529 98. 6 Comparative Example P2 0 10 1300 5. 607 5. 540 98. 8 Comparative Example G2 0· 5 0 1300 5. 608 5. 534 98. 7 Reference Example GP12 0· 5 5 1300 5. 608 5. 601 99. 9 Reference example GP14 0. 5 10 1300 5. 608 5. 606 100. 0 Comparative example G5 3. 0 0 1300 5. 616 5. 346 95. 2 Reference Example GP37 3. 0 5 1300 5. 616 5.476 97. 5 Reference example GP38 3. 0 10 1300 5. 616 5.498 97. 9 Comparative example G6 5. 0 0 1300 5. 622 5. 167 91. 9 Reference example GP39 5 0 5 1300 5. 622 5. 324 94. 7 Reference example GP40 5. 0 10 1300 5. 622 5. 341 95. 0 Comparative example G7 5. 7 0 1300 5. 625 5. 136 91. 3 Reference example GP41 5. 7 5 1300 5. 625 5. 293 94. 1 Reference example GP42 5. 7 10 1300 5. 625 5. 304 94. 3 38 322881 201144252 , ~ [Table 11]

Ga2〇3 content Cd content sintering temperature true density density relative density (% by mass) (ppm) (°C) (g/cm3) (g/cm3) (g/cm3) Comparative Example 1 0 0 1300 5. 607 5.484 97 8 Comparative Example C1 0 5 1300 5. 607 5. 529 98. 6 Comparative Example C2 0 10 1300 5. 607 5. 540 98. 8 Comparative Example G2 0. 5 0 1300 5. 608 5. 534 98. 7 Reference Example GC12 0. 5 5 1300 5. 608 5. 604 99. 9 Reference example GC14 0. 5 10 1300 5. 608 5. 608 100. 0 Comparative example G5 3. 0 0 1300 5. 616 5. 346 95. 2 Reference example GC37 3. 0 5 1300 5. 616 5.492 97. 8 Reference example GC38 3. 0 10 1300 5. 616 5. 509 98. 1 Comparative example G6 5. 0 0 1300 5. 622 5. 167 91. 9 Reference Example GC39 5. 0 5 1300 5. 622 5. 347 95. 1 Reference example GC40 5. 0 10 . 1300 5. 622 5. 363 95. 4 Comparative example G7 5. 7 0 1300 5. 625 5. 136 91. 3 Reference example GC41 5. 7 5 1300 5. 625 5. 299 94. 2 Reference example GC42 5. 7 10 1300 5. 625 5. 310 94. 4 39 322881 201144252 [Table 12] Metal type Metal content (ppm) Sintering temperature (°C) Density (g/cm3) Comparative Example G2 – 1300 5. 534 Reference example GP14 Pb 10 1300 5. 606 Reference example GP15 Pb 100 1300 5. 604 Reference Example GC14 Cd 10 1300 5. 608 Reference Example GC15 Cd 100 1300 5. 608 Comparative Example GA11 A1 10 1300 5. 537 Comparative Example GAI2 A1 100 1300 5. 547 Comparative Example GZrl Zr 10 1300 5. 536 Comparative Example GZr2 Zr 100 1300 5. 542 Comparative Example Glnl In 10 1300 5. 530 Comparative Example Gln2 In 100 1300 5. 521 Comparative Example GSnl Sn 10 1300 5. 527 Comparative Example GSn2 Sn 100 1300 5. 517 Comparative Example GSbl Sb 10 1300 5. 535 Comparison Example GSb2 Sb 100 1300 5. 547 Comparative Example GBil Bi 10 1300 5. 536 Comparative Example GBi2 Bi 100 1300 5. 540 Comparative Example GCul Cu 10 1300 5. 531 Comparative Example GCu2 Cu 100 1300 5. 514 Comparative Example GNil Ni 10 1300 5. 532 Comparative Example GNi2 Ni 100 1300 5. 512 40 322881 201144252 ,— [Table 13]

Ah〇3 content Pb content sintering temperature true density density relative density sputtering rate (mass 90 (ppm) rc) (g/cma) (g/cm3) (g/cm3) reduction rate (3⁄4) Comparative Example 1 0 0 1300 5. 607 5. 484 97. 8 - Comparative Example P1 0 5 1300 5. 607 5. 529 98. 6 - Comparative Example P2 0 10 1300 5. 607 5. 540 98. 8 - Comparative Example A1 0· 5 0 1300 5. 589 5. 505 98. 5 - Example API 0. 5 5 1300 5. 589 5. 544 99. 2 - Example AP2 0_ 5 10 1300 5. 589 5. 555 99. 4 A comparative example A2 2. 0 0 1300 5. 555 5. 466 98.4 26. 2 Example AP3 2_ 0 5 1300 5. 555 5. 527 99. 5 21.9 Example AP4 2. 0 10 1300 5. 555 5. 544 99. 8 19. 5 Comparative Example A3 3. 0 0 1300 5. 532 5. 443 98. 4 - Example AP5 3. 0 5 1300 5. 532 5. 499 99.4 - Example AP6 3. 0 10 1300 5. 532 5. 515 99. 7 - Comparative Example A4 5. 0 0 1300 5.488 5. 384 98. 1 - Example AP7 5. 0 5 1300 5.488 5. 439 99. 1 - Example AP8 5. 0 10 1300 5.488 5. 455 99. 4 - Comparative Example A5 6. 0 0 1300 5. 473 5. 358 97. 9 - Example AP9 6. 0 5 1300 5. 473 5. 424 99. 1 - Example API0 6. 0 10 1300 5. 473 5.435 99. 3 — 41 322881 201144252 [Table 14] Α1ϊ〇3 content Cd content sintering temperature true density density relative density sputtering rate (mass Dong (ppm) (•C) (g/cm3) (g/cm3) ( g/cm3) reduction rate (90 Comparative Example 1 0 0 1300 5. 607 5. 484 97. 8 - Comparative Example Cl 0 5 1300 5. 607 5. 529 98. 6 - Comparative Example C2 0 10 1300 5. 607 5 540 98. 8 - Comparative Example A1 0. 5 0 1300 5. 589 5. 505 98. 5 - Example AC1 0. 5 5 1300 5. 589 5. 567 99. 6 - Example AC2 0. 5 10 1300 5. 589 5. 589 100. 0 - Comparative Example A2 2. 0 0 1300 5. 555 5. 466 98. 4 26. 2 Example AC3 2. 0 5 1300 5. 555 5. 544 99. 8 21.8 Example AC4 2. 0 10 1300 5. 555 5. 566 100. 2 20. 4 Comparative example A3 3. 0 0 1300 5. 532 5. 443 98. 4 - Example AC5 3. 0 5 1300 5. 532 5. 515 99. 7 — Example AC6 3. 0 10 1300 5. 532 5. 543 100. 2 - Comparative Example A4 5. 0 0 1300 5.488 5. 384 98. 1 - Example AC7 5. 0 5 1300 5. 488 5 461 99. 5 - Example AC8 5. 0 10 1300 5.488 5. 493 100. 1 - Comparative Example A 5 6. 0 0 1300 5. 473 5. 358 97. 9 - Example AC9 6. 0 5 1300 5 473 5. 440 99. 4 - Example AC10 6. 0 10 1300 5.473 5. 462 99. 8 - 42 322881 201144252 [Table 15]

Al2〇3 content (% by mass) Pb content (ppm) Sintering temperature rc) Density (g/cm3) Comparative Example A6 2. 0 0 1200 5. 372 Example API 1 2. 0 5 1200 5. 452 Example AP12 2 0 10 1200 5. 493 Comparative Example A2 2. 0 0 1300 5. 466 Example AP3 2. 0 5 1300 5. 527 Example AP4 2. 0 10 1300 5. 544 Comparative Example A7 2. 0 0 1400 5. 511 Example API3 2. 0 5 1400 5. 550 Example API4 2. 0 10 1400 5. 552 Comparative Example A8 2. 0 0 1500 5. 542 Example API5 2. 0 5 1500 5. 556 Example AP16 2.0 10 1500 5. 556 43 322881 201144252 [Table 16]

Al2〇3 content (% by mass) Cd content (ppm) Sintering temperature (°C) Density (g/cm3) Comparative Example A6 2. 0 0 1200 5. 372 Example AC11 2. 0 5 1200 5. 466 Example AC12 2. 0 10 1200 5. 501 Comparative Example A2 2. 0 0 1300 5.466 Example AC3 2. 0 5 1300 5. 544 Example AC4 2. 0 10 1300 5. 566 Comparative Example A7 2. 0 0 1400 5. 525 EXAMPLE AC13 2. 0 5 1400 5. 568 Example AC14 2. 0 10 1400 5. 568 Comparative Example A8 2. 0 0 1500 5. 548 Example AC15 2. 0 5 1500 5. 568 Example AC16 2. 0 10 1500 5. 569 [Simple description of the diagram] None. [Main component symbol description] No 0 44 322881

Claims (1)

201144252 -. VII. Patent application scope: 1. An alumina-zinc oxide sputtering target characterized by containing at least one of Pb and Cd. 2. The alumina-zinc oxide-based sputtering target according to the first aspect of the invention, wherein Pb and Cd contain only Pb in an amount of 4 to 2000 ppm by mass. 3. The alumina-oxidized sputter target according to the first aspect of the invention, wherein Cb is contained in Pb and Cd in an amount of from 3 to 2000 ppm by mass. 4. The alumina-zinc oxide-based sputtering target according to claim 1, which contains Pb and Cd, and the total content of each is 4 to 2000 ppm by mass. 1至10质量百分比。 The alumina-oxidation splattering target of the present invention, wherein the concentration of alumina is from 0.1 to 10% by mass. A method for producing an alumina-zinc oxide-based sputtering target, characterized in that a mixed powder containing an alumina powder, a zinc oxide powder, and a powder containing at least one of Pb and Cd is sintered. 1 322881 201144252 IV. Designated representative map: There is no schema in this case. (1) The representative representative of the case is: ( ). (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: There is no chemical formula in this case. 322881