201142898 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種被使用作為熔解爐或蒸鍍裝置等之 加熱裝置的電子槍燈絲的支持方法、電子搶及處理裝置。 【先前技術】 至今為止，電子槍係以電子作為能源且可輕易地進行 電子束之擺動、偏向，所以被利用作為蒸鍍裝置、熔解爐、 熱處理爐等之加熱源。發射電子束的電子槍之一，可知有 皮爾斯型（直式）電子槍(Pierce gun)(例如，參照專利文獻1、 專利文獻2)。一般而言，從該皮爾斯型電子搶釋放電子束 之際，首先，從依交流電流之焦耳熱而發熱的燈絲釋放熱 電子，並藉由該熱電子與來自燈絲之熱輻射，對於該燈絲， 從施加正電壓後的陰極電極釋放熱電子。然後，從該陰極 電極釋出的熱電子，藉由與陰極電極相同電位的韋乃耳特 (Wehnelt)電極；以及對於此等陰極電極與韋乃耳特電極施 加正電壓的陽極電極所形成的電場而聚焦，成為電子束而 釋出。 (專利文獻1)日本專利公開公報特開平7-258832號 (專利文獻2)曰本專利公開公報特開2005-268177號 【發明内容】 (發明所欲解決之課題） 被利用作為陰極電極之加熱源的燈絲在釋放電子束的 201142898 期間，持續供給有交流電流，且對於陰極電極供給足以使 陰極電極釋放熱電子程度的熱量。因此，燈絲的溫度大約 為2000K〜3000K。藉此溫度，燈絲會熱膨脹，且朝=陰極 電極凸狀變形。該燈絲之變形，由於會使燈絲與陰極電極 之間的距離變化，所以有電子束之控制變得不穩定，即電 子束輸出變成不穩定之虞。 丰發明係為了解決上述問題點而開發完成者，其目合 在於提供一種燈絲的支持方法、電子搶及具備該電子搶存 處理裝置’以期能夠使電子束輸出穩定化。 (解決課題之手段） 以下，記載用以解決上述課題的手段。 、本發明的第一態樣係一種燈絲的支持方法，其係 為了利用熱電子加熱陰極電極而被通電的燈絲的支 :括：方法係具備如下步驟：藉由支持構件支持燈絲：i 按…、因通電而發生的前述燈絲之伸展，使前述 ^前端位移的方式支持前述燈絲。若依據此方法，雜f 夺燈絲的支持構件之前端位移，吸收燈絲之 」 ==絲的彎曲部之位移量。因而，可抑制燈絲與 Θ的距離變動。因此’電子束輸出可穩定化。、w 1 上述方法中，前述支持構件之—例為支柱，卷 ，通電而發生伸展時’前述支柱之前端亦可按=心 電中之熱而位移。若依據此方法，對於燈 而發生的燈絲之伸展，使支柱:=位:此，可按照因! 本發明的第二態樣係—種電子槍。該電子搶係包〜 4 201142898 極電極；燈絲，其係為了利用執 ‘、 被通電；以及二支枉，其係支^ u述陰極電極而 身具有：安裝有前述燈絲的前端别柱’， 各前述支柱，係按照因通電而料疋於"·座的基端° 各自的前述前端仇移。若依述燈絲之伸展’使 ΐ=:=Γ_之伸展，所以可抑制燈絲的 雜徵私a, 可抑制燈絲與陰極電極之間的距 離變動。因此，電子束輸出可穩定化。 φ i述:，前述各支柱亦可按照對前述燈絲通電 述前端位移。若依據該構成，對於燈 4的通電中，支枉的前端就可對應熱而位移 照因熱而發生的燈絲之伸展，使支柱的前端位移。 上述電子搶中’則述各支柱亦可按照前述燈絲之伸 展，使各自的前述前端沿著前述燈絲之伸展方向位移。若 :據此構A自於可藉由支柱的前端位移而吸收燈絲之伸 展，所以可抑制燈絲與陰極電極之間的距離變動。 孱’ 電：搶中，則述各支柱亦可按照前述燈絲之伸 於严今ϋ立柱的月1端相互地朝相反方向位移而構成。由 分別固定於二支柱，所以燈絲之伸展係朝 ;端相互i“向發生。因而，若依據此構成，使二支柱的 袖展 相反方向位移’就可藉以吸收發生於燈絲之 伸展。 5显子搶+ ’前述各支㈣可包含具有觸脹係數 ==構件而構成。若依據此構成，藉由構成各支 、 件之線膨脹係數即熱膨脹係數的差，就可使 201142898 各支柱的前端按照熱而輕易地位移。 上述電子槍中，前述各支柱 該第一側部相反側的第二側部，=有^侧及位於 m夂座的狀態下相互地對向。此 時則述各支柱亦可藉由第一構件 該第一構件係配詈於^、+、@ 第一構件而構成， 數，兮第-错杜後；刚"第一侧部且具有第一熱膨脹係 數“第一構件係配置於前述第二側部且呈 更ΐ的第二熱膨脹係數。若:據此構成，即 认一〗第一線膨脹係數即熱膨脹係數的差，使各支柱 的刖端按照熱而輕易地位移。 二上述電子搶中，前述各支柱亦可包含固定部，兑係將 :述基端固^於前述基座；支持部，其係從前述固^ 伸，以及前端部，其係形成於前述支持部之 件此L前述支持部亦可藉由前述第-構件及 則述第二構件而構成。若依據此構成’即可依 線膨脹係數的差’使各支持部按照熱而輕⑽位移。一 ^發明的第三態樣係-種具備上述電子搶 置。此種的處理裝置中，電子槍會抑制燈絲與陰 = 間的距離變動，使電子束輸出狀化。因而，在處 中，可穩定地進行使用電子束的處理、例如對象 ：。 (發明效果） ” 如以上所述，若依據本發明即可提供一種能夠 子束之輸出駭化的燈絲的支持方法、電子搶及具備 子搶的處理裝置。 β电 6 201142898 【實施方式】 以下，說明一實施形態。 如圖1所示，電子搶10係安裝於處理裝置30之側壁 30a。處理裝置30係用以將例如MgO(氧化鎂）等金屬氧化 物的蒸鍍被覆膜形成於玻璃基板等基板之表面的蒸錢室。 電子搶10係例如為皮爾斯型電子搶’而其框體U的 11a係固定於側壁30a。 ” 14、韋乃耳特(Wehnelt)電極15、陽極電極 離子收集 電子搶10係產生電子束EB，且將該電子束 體11之開口朝向處理裝置30之處理室内射出。從樞 EB係照射配置於處理室内的對象物（蒸鍍材。戎電子束 電子槍10係包含燈絲12、陰極電極13 1 ° 器 (flowregiSter)17、聚焦線圈18及擺動線圈流量調節器 燈絲12、陰極電極13、及離子收隼琴 電子束EB之射出方向延伸的光轴a上'。险木系酉己置在朝 燈絲12配置在射出側即開口侧，離子收集|電極13係較 12配置在反射出側（反開口側）。 14係較燈絲 燈絲12之中心部與陰極電極13係在 互地對向的方式配置。 A方向以相 以射出方向為中心的陰極電極13之 耳特電極15圍繞著。圓錘筒狀的陽極電极°圉係藉由韋乃 耳特電極15配置於射出側，該陽極電極°1616係較該韋乃 係位於光軸A上。圓筒狀的流量調節器ιΥ之貫通孔中心 極16配置於射出側，該流量調節器17 係較讀陽極電 轴A上。 輛中心係位於光 201142898 在流量調節器17之外周，從接近陽極電極16之位置 依序設置有聚焦線圈18與擺動線圈19。聚焦線圈18係藉 由其產生的磁場使已通過陽極電極16的電子束EB聚焦。 擺動線圈19係藉由其產生的磁場使電子束EB擺動。 燈絲12係連接於燈絲電源21，從該燈絲電源21供給 交流電源。陰極電極13及韋乃耳特電極15係連接於陰極 電源22 ’從該陰極電源22施加直流電壓。陽極電極16係 連接於加速電源23，且從該加速電源23施加直流電壓。 此等施加於陰極電極13、韋乃耳特電極15及陽極電極16 的直流電壓係設定為燈絲12之電位最低、且陽極電極16 之電位最高。 在此種的皮爾斯型電子槍1〇中，首先，來自燈絲電源 21之交流電流供給至燈絲12，燈絲π被加熱至 2000K〜3000K而釋放熱電子。然後，該釋出的熱電子係藉 由陰極電源22，相對於上述燈絲12，由維持於正電位的陰 極電極13來接收。此時，陰極電極13會同時藉由燈絲12 之輻射熱而被加熱。陰極電極13藉由此等熱電子與輻射熱 被加熱，也會釋出熱電子。藉由該陰極電極13釋出的熱電 子係藉由與該陰極電極13同電位的韋乃耳特電極15、與 相對於此等陰極電極13及韋乃耳特電極15而維持於正電 位的陽極電極16之間的電位差而被加速，沿著上述光軸a 飛行。然後，通過陽極電極16之貫通孔與連結於該陽極電 極16的流量調節器17之熱電子，係從框體u之開口部朝 向處理裝置30内釋出成為電子束EB。 此時，若從陰極電極13釋放的熱電子之一部分在框體 8 201142898 11内及處理裝置3G内撞擊到殘留於此等内部的氣體，則 該殘留氣體就會被陽離子化，而該陽離子會藉由上述陰極 電極13與陽極電極16之電壓而被加速。若該加速後的陽 離子撞擊到陰極電極13，會因此在陰極電極13形成孔部 (凹部）。因而’若此種陽離子若長期間釋放，則會在陰極 電極13形成貫通孔。因此，相對於陰極電極，於與照 射方向相反方向的位置，即相對於陰極電極13，於盘陽極 電極16相反側的位置配置有上述離子收集g 14。該離子 14储由吸收形成於陰極電極13之通過貫通孔的 2離子（即離子束），抑制因離子束所造成的電子搶 傷。 明 成。其次’說明上述電子搶10中所包含的發射部4〇之構 發射部40係電子克產哇511 & 的科n ?电于末屋生器，如圖2所示，包含有上述 =二 極13、韋乃耳特電極15、陽極電極16 及離子收集器14。圖3係顯示燈絲12之一例。 碎ηΐϋΐ由高㈣金屬㈣合金所構成。燈 丨：具有由四個面所構成的外周面之剖面為矩形的線 12係於包含構成其外周面的—面（陰極對向面） l2a，曲部仏中，上述三處— ，繫方向之兩端部係折彎形成朝陰極對向面之法 伸之直線狀的一對腳部12b。換 '' π ^ 材的燈絲12係沿著包含於此:=，=矩形之線 的形狀而形成’藉以於其周方向不具有扭面之一 201142898 上述燈絲12係例如藉由放電加工而製作成。在此說明 該加工方法的概略。首先，準備例如鎢之金屬板。該金屬 板的板厚例如為0.5mm，該厚度係對應光軸A方向之燈絲 12的寬度(參照圖1)。由該金屬板藉由習知的線放電加工 裝置，切出用以形成燈絲12的線材。該線材係在長度方向 之中心部具有彎曲部12a。然後，將線材的長度方向之兩 端部折彎以形成腳部12b，藉以獲得燈絲12。 如圖2所示，上述燈絲12係安裝在作為支持構件而被 固定於基座41之燈絲支柱42、43。 發射部40係包含基座41，該基座41係藉由螺栓等固 疋於發射箱（均省略圖示）。在基座41係安裝有二支燈絲支 柱42、43。本例中，二支燈絲支柱42、43係經由絕緣礙 子44、45插通形成於基座41的二貫通孔，且藉由螺帽46、 47固定。 各燈絲支柱42、43係具有支持燈絲12的前端；以及 固疋於基座41的基端。本例中，各燈絲支柱42、43之前 端係形成供燈絲12之腳部12b插入用的插入部。然後，將 分別插入於燈絲支柱42、43之插入部的燈絲12之腳部12b 藉由例如設置螺釘（固定螺釘)48、49固定在燈絲支柱42、 43，藉此將燈絲12安襄在燈絲支柱42、43。 燈絲支柱42、43係分別連接有燈絲配線5〇、51，經 由該配線50、51與燈絲支柱42、43供給交流電流至燈絲 12。 陰極電極13係安襞在安裝基座41的上述發射箱（省略 圖示）’與燈絲12相對向地配置。在陰極電極13之前方（電 201142898 子束之射出方向，圖2中為右方)係配置有被安裝於 射箱的韋乃耳特電極15。 &發 上述基座41中’於燈絲支柱42、43之間的位置 有絕緣體(例如礙子)52，在該絕緣體之前端安裝有 集器14。該離子收集器14係如上所述，相對於燈絲^ 配置在與陰極電極13之相反側。另外，離子收集 ; 藉由未圖示的配線，與燈絲支柱42、43中之任丄方係 各燈絲支柱42、43係至少部分包含由具有材質互^ f數個構賴構成的部位。換句話說，該雜可為各^ f柱42、43之一部分，也可為各燈絲支柱42、43之全;:糸 各燈絲支柱42、43中，從固定於基錢的^。 =為止之部位，亦可藉由具有互異㈣的複數 ^ 構成。本實施形態中，燈絲支柱42係 =件所 定於基座41的固定部42a ;從該固定部心延伸的^固 以及形成於該支持部42b之前端（即燈絲支柱 %) ’以安裝燈絲12的前端部42c。然 的則 之支持部42b係由具有不同 以且…支柱42 樣地，燈絲支柱43係具有用以將^數個構件所構成。同 固定部43a;從該固定部!於基座… :δ;支持部43b之前端(即燈絲支柱43的；：:Μ及形成 係、2的前端部43c。然後，該燈:j支=安裝燈 ，有不同材質的複數個構件所構 〜，燈絲支柱42、43係相同的構成。 實施形 兩燈絲支柱42、43係於♦雷；击^ 通電至燈絲12時，可吸收“通^，被放射時，即當 ⑽通電而發生於燈絲12的伸 201142898 縮地係構成。燈絲12係因通電而發熱。然後，因燈絲12 係其材質為鎢或鎢合金，所以會隨著發熱所造成的溫度上 升而伸展。換句話說，二腳部12b之間隔會變寬。因此， 燈絲支柱42、43係個別的前端對應燈絲12之伸展而位移， 即二燈絲支柱42、43之前端間的間隔係隨著溫度上升而擴 展地構成。 在此說明燈絲支柱42、43之構成例。本實施形態的燈 絲支柱42、43中，各支持部42b、43b係藉由二種類的構 件（即第一構件B1及第二構件B2)所構成。第一構件B1及 第二構件B2係以具有互異線膨脹係數（即熱膨脹係數）的材 料所形成。例如，第一構件B1為鉬(Mo)，第二構件B2為 鈕(Ta)。然而，如後面所述，構件b卜B2之組合，並不被 限定於鉬與鈕。換句話說，各燈絲支柱42、43係具有第一 側部、及位於該第一側部相反侧的第二側部’燈絲支柱42、 43固定於基座41的狀態下，此等的第二側部係相互地對 向。然後，各燈絲支柱42、43之第一側部（本例中，為各 支持部42b、43b之第一側部）係配置具有第一線膨脹係數 ，第一構件B1。另—方面，各燈絲支柱42、43之第二側 σΡ(本例中’為各支持部42b、桃之第二側部）係配置具有 比第-線膨脹係數還更A n膨脹係數的第二構件 H據具有互異線膨脹係數的二構件⑴、b2之 配置關係’兩燈絲4 42、43之前端就會隨著溫度上升而 朝相互地分離的方向位移。 如上所述’燈絲12，係隨著溫度上升而伸展。假設二 、糸支柱 43不變形的情況’如圖4(b)所示’由於腳部 12 201142898 12b之位置不會變化，所以燈絲12會依該伸展而朝向電子 束之射出方向（圖4(b)中為上方）變形成凸狀。換句話說，圖 4(b)之箭頭所示的距離Lsb會變長。另外，以一點鏈線顯 示室溫中的燈絲12之位置。因此，於加熱中，應力係因該 變形而施加於燈絲12之彎曲部12a。若停止電子槍之驅 動，則因燈絲12之溫度下降，所以燈絲12會回到原來的 狀態（一點鏈線之位置）。換句話說，隨著電子槍之驅動、 停止，彎曲延展之應力係反覆施加於燈絲12。該應力係成 為使燈絲12斷線的主因。 另一方面，如圖4(a)所示，本實施形態的燈絲支柱42、 43中，此等的前端之間隔係隨著溫度上升而擴展。該擴展 若與燈絲12之伸展延長大致相等，則彎曲部12a之位置就 與未加溫之通常時的位置大致相等。換句話說，圖4(a)之 箭頭所示的距離Lsa並未變化。另外，即使前端的間隔之 擴展小於燈絲12之伸展，與前端無位移的情況相較，彎曲 部12a之移動量，即燈絲12之變形（彎曲）也會變少。另外， 圖4(a)中顯示各燈絲支柱42、43之基端至前端皆為第一構 件B1及第二構件B2。 圖4(a)及（b)中，燈絲12之上方係配置有陰極電極 13(參照圖2)。因而，如圖4(a)所示，若燈絲支柱42、43 之前端擴展，則由於燈絲12的彎曲部12a之位置變化會受 到抑制，所以燈絲12與陰極電極13之距離Lsa，與圖4(b) 所示的情況相較會變少。換句話說，伴隨溫度上升的燈絲 12與陰極電極13之間的距離Lsa的變動會受到抑制。 (實施例） 13 201142898 使用厚度為〇.5mm的鎢板作為金屬板，且對該鎢板使 用線放電加工裝置以獲得上述的燈絲12。 燈絲12之長度（兩腳部12b之中心間的距離），係在室 溫中為35mm ’在電子束EB輸出時(燈絲溫度為2800k)為 35.5nxrn 〇 將燈絲支柱42、43之支持部42b、43b，分別由第一 構件及第二構件B2而構成，以鉬作為第一構件B1， =钽作為第二構件B2。第一及第二構件B1、B2之長度以沿 著圖2A之光軸a的方向）為U 5mm，厚度（與光軸A垂直 ，方向）為3.5mm。各燈絲支柱42、43之前端的位移量（與 光轴A垂直的方向）為0.2〜0.25mm。 另外 為了防止燈絲12之彎曲部i2a與陰極電極j 的相對之位置相對於光轴A偏移（軸偏移），各燈絲支 ㈣的前狀位移量互為相料祕。又1 ^中，，吟42、43之前端的位移量係以於沿著光軸Α的； 量設定;12 曲部12&與陰極電極13的距離之變1 重成疋於±lmm以内為較佳。 法，：::有:!!子搶10所釋放的電子㈣之輸出的; 陰極電燈絲㈣及陰極控制。燈絲控制係指片 燈絲12離j由控制輸人於燈絲12㈣力，使施加力BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of supporting an electron gun filament used as a heating device for a melting furnace or a vapor deposition device, and an electronic grab processing device. [Prior Art] The electron gun has been used as a heating source for a vapor deposition device, a melting furnace, a heat treatment furnace, etc., because electrons are used as an energy source and can easily oscillate and deflect electron beams. One of the electron guns that emit an electron beam is known as a Pierce type (a straight type) electron gun (see, for example, Patent Document 1 and Patent Document 2). In general, when the electron beam is released from the Pierce-type electron, first, the hot electron is released from the filament which is heated by the Joule heat of the alternating current, and by the hot electron and the heat radiation from the filament, for the filament, The hot electrons are released from the cathode electrode after a positive voltage is applied. Then, the hot electrons emitted from the cathode electrode are formed by a Wehnelt electrode having the same potential as the cathode electrode; and an anode electrode for applying a positive voltage to the cathode electrode and the Verneut electrode. The electric field is focused and becomes an electron beam to be released. (Patent Document 1) Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2005-268177. The source filament is continuously supplied with an alternating current during 201142898, which releases the electron beam, and supplies a sufficient amount of heat to the cathode electrode to release the hot electrons to the cathode electrode. Therefore, the temperature of the filament is approximately 2000K to 3000K. At this temperature, the filament expands thermally and deforms convexly toward the cathode electrode. Since the deformation of the filament changes the distance between the filament and the cathode electrode, the control of the electron beam becomes unstable, that is, the electron beam output becomes unstable. In order to solve the above problems, the invention has been developed to provide a method of supporting a filament, and an electronic capture device having the electron capture processing device in order to stabilize the output of the electron beam. (Means for Solving the Problem) Hereinafter, means for solving the above problems will be described. A first aspect of the present invention is a method of supporting a filament, which is a filament of a filament that is energized by heating the cathode electrode by means of hot electrons: the method has the following steps: supporting the filament by the support member: i press... The extension of the filament, which occurs due to energization, supports the filament in such a manner that the front end is displaced. According to this method, the front end of the supporting member of the filament is absorbed, and the filament is absorbed by the === the displacement of the curved portion of the filament. Therefore, the variation in the distance between the filament and the crucible can be suppressed. Therefore, the electron beam output can be stabilized. In the above method, the support member is exemplified by a pillar, a coil, and an extension when energized. The front end of the pillar may be displaced by the heat in the electrocardiogram. According to this method, the extension of the filament which occurs for the lamp causes the pillar: = position: this, according to the second aspect of the invention, an electron gun. The electronic grabbing package ~ 4 201142898 pole electrode; filament, in order to use the ', is energized; and two branches, the system is supported by the cathode electrode and has: the front end column of the filament is installed, Each of the above-mentioned pillars is in accordance with the front end of each of the base ends of the " If the extension of the filament is made to extend ΐ =: = Γ _, the miscellaneous sign of the filament can be suppressed, and the variation in the distance between the filament and the cathode electrode can be suppressed. Therefore, the electron beam output can be stabilized. φ i: The above-mentioned respective pillars may also be displaced in accordance with the energization of the filament. According to this configuration, in the energization of the lamp 4, the tip end of the support can displace the filament due to heat in response to heat, and the tip end of the column is displaced. In the above-mentioned electronic rushing, the struts may be extended in accordance with the extension of the filaments in accordance with the extension of the filaments. According to this configuration, since the extension of the filament can be absorbed by the displacement of the tip end of the pillar, the variation in the distance between the filament and the cathode electrode can be suppressed.孱 电 电 电 电 电 电 电 电 电 电 电 电 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢 抢It is fixed to the two pillars respectively, so the extension of the filament is directed toward the end; the ends i are "opposite. Therefore, according to this configuration, the sleeves of the two pillars are displaced in the opposite direction" to absorb the extension of the filament. Sub-grab + 'The foregoing each branch (4) may be composed of a member having a coefficient of intensification ==. According to this configuration, the front end of each pillar of 201142898 can be made by the difference in the coefficient of thermal expansion between the linear expansion coefficients of the members and the members. In the above-mentioned electron gun, the second side portions on the opposite sides of the first side portion of the respective pillars are opposite to each other in the state of the m-seat and the m-seat. Alternatively, the first member is configured to be coupled to the first member, the first member, and the first member is configured to be the first member, and the first member has a first coefficient of thermal expansion. A component is disposed on the second side portion and has a second, higher coefficient of thermal expansion. If: According to this configuration, the difference between the first linear expansion coefficient and the thermal expansion coefficient is recognized, so that the ends of the respective pillars are easily displaced in accordance with heat. In the above electronic smashing, each of the pillars may further include a fixing portion, and the base portion is fixed to the pedestal; the supporting portion is formed from the fixing portion and the front end portion, and is formed in the foregoing support The L-support portion may be configured by the first member and the second member. According to this configuration, the difference in the coefficient of linear expansion can be made such that each support portion is lightly (10) displaced in accordance with heat. A third aspect of the invention - having the above electronic rush. In such a processing apparatus, the electron gun suppresses the variation in the distance between the filament and the cathode, and causes the electron beam to be outputted. Therefore, in the process, the processing using the electron beam, for example, the object can be stably performed. (Effect of the Invention) As described above, according to the present invention, it is possible to provide a method of supporting a filament capable of outputting a beamlet, and an apparatus for processing an electronic grab with a sub-robbing. β电6 201142898 [Embodiment] An embodiment is described. As shown in Fig. 1, an electronic grab 10 is attached to a side wall 30a of a processing apparatus 30. The processing apparatus 30 is formed by depositing a vapor deposited coating of a metal oxide such as MgO (magnesia). A vapor-storing chamber on the surface of a substrate such as a glass substrate. The electron-collecting 10 is, for example, a Pierce-type electron grab, and the 11a of the frame U is fixed to the side wall 30a." 14. Wehnelt electrode 15, anode electrode The ion collecting electron grab 10 generates an electron beam EB, and the opening of the electron beam 11 is emitted toward the processing chamber of the processing device 30. The object disposed in the processing chamber is irradiated from the pivot EB system (vapor deposition material. The electron beam electron gun 10 includes a filament 12, a cathode electrode 13 1 (flowregiSter) 17, a focus coil 18, and a swing coil flow regulator filament 12, The cathode electrode 13 and the optical axis a of the ion-receiving electron beam EB extend in the emission direction. The dangerous wood system is placed on the opening side of the filament 12 on the emission side, and the ion collection electrode 13 is arranged in 12 On the reflection side (reverse opening side), the center of the filament filament 12 and the cathode electrode 13 are arranged to face each other in the direction of the opposite direction. The A direction is the ear electrode of the cathode electrode 13 centered on the emission direction. The circular anode-shaped anode electrode is disposed on the emission side by the Vernett electrode 15, which is located on the optical axis A compared to the Weiner system. The cylindrical flow rate The center hole 16 of the through hole of the regulator ι is disposed on the exit side, and the flow regulator 17 is located on the read anode electric axis A. The center of the center is located at the light of 201142898 at the outer periphery of the flow regulator 17, from the position close to the anode electrode 16 Focus line 18 and the oscillating coil 19. The focusing coil 18 focuses the electron beam EB that has passed through the anode electrode 16 by the magnetic field generated by it. The oscillating coil 19 oscillates the electron beam EB by the magnetic field generated thereby. The filament 12 is connected to the filament. The power source 21 supplies an alternating current power source from the filament power source 21. The cathode electrode 13 and the verne gate electrode 15 are connected to the cathode power source 22' to apply a direct current voltage from the cathode power source 22. The anode electrode 16 is connected to the acceleration power source 23, and The DC voltage is applied to the accelerating power source 23. The DC voltages applied to the cathode electrode 13, the Vernet electrode 15 and the anode electrode 16 are set such that the potential of the filament 12 is the lowest and the potential of the anode electrode 16 is the highest. In the Pierce type electron gun, first, the alternating current from the filament power source 21 is supplied to the filament 12, and the filament π is heated to 2000 K to 3000 K to release the hot electrons. Then, the released hot electrons are supplied by the cathode power source 22, The filament 12 is received by the cathode electrode 13 maintained at a positive potential. At this time, the cathode electrode 13 is simultaneously heated by the radiant heat of the filament 12. The cathode electrode By heating the isothermal electrons and the radiant heat, the hot electrons are also released. The hot electrons released by the cathode electrode 13 are opposite to the Vernett electrode 15 having the same potential as the cathode electrode 13. The potential difference between the cathode electrode 13 and the Venezite electrode 15 maintained at the positive potential of the anode electrode 16 is accelerated and flies along the optical axis a. Then, the through hole of the anode electrode 16 is connected to the through hole. The hot electrons of the flow rate adjuster 17 of the anode electrode 16 are released from the opening of the frame u toward the processing device 30 to become the electron beam EB. At this time, if a part of the hot electrons released from the cathode electrode 13 is in the frame When the gas remaining inside the treatment device 3G and the inside of the treatment device 3G is cationized, the cation is accelerated by the voltages of the cathode electrode 13 and the anode electrode 16 described above. If the accelerated positive ions hit the cathode electrode 13, a hole portion (concave portion) is formed in the cathode electrode 13. Therefore, if such a cation is released for a long period of time, a through hole is formed in the cathode electrode 13. Therefore, the ion collection g 14 is disposed at a position opposite to the irradiation direction with respect to the cathode electrode, that is, at a position opposite to the cathode electrode 13 on the opposite side of the disk anode electrode 16. The ions 14 are stored by absorbing 2 ions (i.e., ion beams) formed in the through holes of the cathode electrode 13, thereby suppressing electron smash caused by the ion beam. Ming Cheng. Next, the description of the structure of the transmitting portion 40 included in the electronic grab 10 is an electronic device, and the electronic device is used in the terminal housing, as shown in FIG. 2, and includes the above=two. The pole 13, the Vernet electrode 15, the anode electrode 16, and the ion collector 14. FIG. 3 shows an example of the filament 12. The ruthenium ΐϋΐ is composed of a high (four) metal (four) alloy. Lamp 丨: a line 12 having a rectangular cross section having an outer peripheral surface composed of four faces is attached to a surface (cathode opposite surface) l2a constituting an outer peripheral surface thereof, and the above three places are in the curved portion, and the direction is The both end portions are bent to form a pair of straight leg portions 12b extending toward the opposite surface of the cathode. The filament 12 of the '' π ^ material is formed along the shape of the line including: =, = rectangle" so that one of the twisted surfaces is not provided in the circumferential direction thereof. 201142898 The filament 12 is produced, for example, by electrical discharge machining. to make. The outline of this processing method will be described here. First, a metal plate such as tungsten is prepared. The thickness of the metal plate is, for example, 0.5 mm, which corresponds to the width of the filament 12 in the direction of the optical axis A (see Fig. 1). From the metal plate, a wire for forming the filament 12 is cut by a conventional wire electric discharge machining apparatus. This wire has a curved portion 12a at the center portion in the longitudinal direction. Then, both ends of the length direction of the wire are bent to form the leg portion 12b, thereby obtaining the filament 12. As shown in Fig. 2, the filament 12 is attached to the filament stays 42, 43 which are fixed to the base 41 as a supporting member. The transmitting unit 40 includes a base 41 which is fixed to the launching box by bolts or the like (all of which are not shown). Two filament stubs 42, 43 are attached to the base 41. In this example, the two filament stays 42, 43 are inserted through the insulating barriers 44, 45 through the two through holes formed in the base 41, and are fixed by the nuts 46, 47. Each of the filament stays 42, 43 has a front end that supports the filament 12; and a base end that is fixed to the base 41. In this example, the insertion ends for the insertion of the leg portions 12b of the filament 12 are formed at the front ends of the filament stays 42, 43. Then, the leg portions 12b of the filaments 12, which are respectively inserted into the insertion portions of the filament stays 42, 43 are fixed to the filament stays 42, 43 by, for example, setting screws (fixing screws) 48, 49, thereby fixing the filament 12 to the filament Pillars 42, 43. The filament stays 42, 43 are respectively connected to the filament wirings 5, 51, and the alternating current is supplied to the filament 12 via the wirings 50, 51 and the filament stays 42, 43. The cathode electrode 13 is placed in the above-described emission box (not shown) of the mounting base 41 so as to face the filament 12. In front of the cathode electrode 13 (electricity 201142898 beamlet emission direction, right in Fig. 2), a Vernet electrode 15 attached to the capsule is disposed. & The pedestal 41 has an insulator (e.g., an obstruction) 52 at a position between the filament stays 42, 43, and a collector 14 is attached to the front end of the insulator. The ion collector 14 is disposed on the opposite side of the cathode electrode 13 with respect to the filament as described above. Further, ion collection is performed by means of a wiring (not shown), and each of the filament stays 42 and 43 has at least a portion including a plurality of constituents having a material composition. In other words, the miscellaneous may be part of each of the columns 42, 43 and may be the entirety of each of the filament struts 42, 43; 糸 each of the filament struts 42, 43 is fixed from the base. The part to the end can also be composed of complex numbers ^ which have mutually different (four). In the present embodiment, the filament stay 42 is a fixed portion 42a defined by the base 41, and is fixed from the center of the fixed portion and formed at the front end of the support portion 42b (i.e., the filament support %) to mount the filament 12 Front end portion 42c. However, the support portion 42b is formed of a different number of members, and the filament support 43 is formed to have a plurality of members. The same fixing portion 43a; the fixing portion is attached to the base: δ; the front end of the supporting portion 43b (i.e., the front end portion 43c of the filament support 43; Μ and the forming system 2). Then, the lamp: j branch = The lamp is mounted, and a plurality of members of different materials are constructed. The filament legs 42 and 43 are identical in structure. The two filament supports 42 and 43 are arranged in a ray; when the wire is energized to the filament 12, the wire can be absorbed. When it is irradiated, that is, when (10) is energized, it occurs in the extension of the filament 12, 201142898. The filament 12 is heated by energization. Then, since the filament 12 is made of tungsten or tungsten alloy, it will follow the heat. The resulting temperature rises and stretches. In other words, the interval between the two legs 12b is widened. Therefore, the individual ends of the filament struts 42, 43 are displaced corresponding to the extension of the filament 12, that is, between the front ends of the two filament struts 42, 43 The space is expanded as the temperature rises. Here, a configuration example of the filament stays 42 and 43 will be described. In the filament stays 42 and 43 of the present embodiment, each of the support portions 42b and 43b is composed of two types of members (that is, The first member B1 and the second member B2) are formed. The member B1 and the second member B2 are formed of a material having an isotropic coefficient of expansion (i.e., a coefficient of thermal expansion). For example, the first member B1 is molybdenum (Mo) and the second member B2 is a button (Ta). As will be described later, the combination of the members b and B2 is not limited to the molybdenum and the button. In other words, each of the filament stays 42, 43 has a first side portion and a second side on the opposite side of the first side portion. In the state where the filament stays 42, 43 are fixed to the base 41, the second side portions are opposed to each other. Then, the first side portions of the filament stays 42, 43 (in this example, each support) The first side portion of the portions 42b and 43b is disposed with the first linear expansion coefficient, the first member B1. On the other hand, the second side σ of each of the filament stays 42 and 43 (in this example, 'for each support portion 42b, The second side of the peach is configured to have a second member H having a coefficient of expansion of A n more than the first coefficient of linear expansion. According to the arrangement relationship of the two members (1) and b2 having a mutually different coefficient of linear expansion, the two filaments 4 42 and 43 The front end will shift in the direction of mutual separation as the temperature rises. As mentioned above, the filament 12 The degree is increased and stretched. Assume that the case where the crucible pillar 43 is not deformed is as shown in Fig. 4(b). Since the position of the foot portion 12 201142898 12b does not change, the filament 12 is projected toward the electron beam according to the extension. The direction (upward in Fig. 4(b)) is convex. In other words, the distance Lsb indicated by the arrow in Fig. 4(b) becomes long. In addition, the filament 12 in the room temperature is displayed with a little chain line. Therefore, during heating, the stress is applied to the curved portion 12a of the filament 12 due to the deformation. If the driving of the electron gun is stopped, the temperature of the filament 12 is lowered, so that the filament 12 returns to the original state (a little chain line) Position). In other words, as the electron gun is driven and stopped, the stress of the bending extension is applied to the filament 12 in turn. This stress is the main cause of the filament 12 being broken. On the other hand, as shown in Fig. 4 (a), in the filament stays 42 and 43 of the present embodiment, the intervals of the tips are expanded as the temperature rises. When the extension is substantially equal to the extension of the filament 12, the position of the curved portion 12a is substantially equal to the normal position when the temperature is not warmed. In other words, the distance Lsa indicated by the arrow of Fig. 4(a) does not change. Further, even if the interval of the front end is smaller than the extension of the filament 12, the amount of movement of the curved portion 12a, that is, the deformation (bending) of the filament 12 is reduced as compared with the case where the front end is not displaced. Further, in Fig. 4(a), the base end to the front end of each of the filament stays 42, 43 are shown as the first member B1 and the second member B2. In Figs. 4(a) and 4(b), a cathode electrode 13 (see Fig. 2) is disposed above the filament 12. Therefore, as shown in Fig. 4(a), if the front ends of the filament stays 42, 43 are expanded, since the positional change of the curved portion 12a of the filament 12 is suppressed, the distance Lsa between the filament 12 and the cathode electrode 13 is as shown in Fig. 4 (b) The situation shown will be less. In other words, the variation in the distance Lsa between the filament 12 and the cathode electrode 13 accompanying the temperature rise is suppressed. (Embodiment) 13 201142898 A tungsten plate having a thickness of 〇.5 mm was used as a metal plate, and a wire electric discharge machine was used for the tungsten plate to obtain the above-described filament 12. The length of the filament 12 (the distance between the centers of the two leg portions 12b) is 35 mm at room temperature '35.5 nxrn at the time of output of the electron beam EB (filament temperature is 2800 k), and the support portion 42b of the filament stays 42, 43 And 43b are respectively composed of the first member and the second member B2, and molybdenum is used as the first member B1, and 钽 is used as the second member B2. The lengths of the first and second members B1, B2 are U 5 mm in the direction along the optical axis a of Fig. 2A, and the thickness (perpendicular to the optical axis A, direction) is 3.5 mm. The displacement amount of the front end of each of the filament stays 42, 43 (the direction perpendicular to the optical axis A) is 0.2 to 0.25 mm. Further, in order to prevent the relative position of the curved portion i2a of the filament 12 and the cathode electrode j from being shifted (axially offset) with respect to the optical axis A, the front displacement amounts of the respective filament branches (4) are mutually different. In addition, in 1 ^, the displacement of the front end of 吟42, 43 is based on the optical axis; the amount is set; 12 the change of the distance between the curved portion 12& and the cathode electrode 13 is greater than ±1 mm. good. Law, :::: There are:!! The child grabs the output of the electron (4) released by 10; the cathode electric filament (4) and the cathode control. Filament control refers to the filament 12 from the control of the input to the filament 12 (four) force, so that the force is applied
之輸出的方電極13之間的電壓變化以控制電子束EJ 而控制上述Ϊ極1^控制係指將輸人於㈣12的電力固々 極電壓的方法。 藉由燈絲控制來驅動 X下，顯示此等二控制方法中 電子搶10而所得的結果。 14 201142898 在此計測與電子搶10射出的電子束EB之輸出的各種 照射條件相關之依存性。 另外，使用於計測的電子槍10及電子槍電源的額定輸 出為30kW(加速電壓20kVxl.5A)。 圖5係在下述的照射條件中，顯示各F-C距離（燈絲12 與陰極電極13之距離）時，對於燈絲12之輸入電力與電子 束EB之輸出的關係的圖。在此，圖5中係分別以黑圈顯 示F-C距離為2.6mm時所得的結果，另一方面，以黑四角 顯示F-C距離為4.2mm時所得的結果。The change in voltage between the square electrodes 13 outputted to control the electron beam EJ controls the above-described threshold control means a method of inputting the power-solid-state voltage of (4) 12. Driving X under the filament control shows the results of the electronic grabbing of 10 in these two control methods. 14 201142898 Here, the dependence on various illumination conditions of the output of the electron beam EB emitted by the electron rush 10 is measured. Further, the rated output of the electron gun 10 and the electron gun power supply used for measurement was 30 kW (acceleration voltage 20 kV x 1.5 A). Fig. 5 is a graph showing the relationship between the input power of the filament 12 and the output of the electron beam EB when the respective F-C distances (distance between the filament 12 and the cathode electrode 13) are displayed under the following irradiation conditions. Here, in Fig. 5, the results obtained when the F-C distance is 2.6 mm are shown by black circles, respectively, and the results obtained when the F-C distance is 4.2 mm are shown by the black squares.
•陰極電壓：1.2kV • F-C 距離：2.6mm、4.2mm 與設定為4.2mm的情況相較可知，將F-C距離設定為 2.6mm的情況時，電子束EB之輸出設為17kV時的對於燈 絲12之輸入電力可減低約10%。此可視為F-C距離較短的 一方中，燈絲12釋出的熱電子容易被引入陰極電極13之 故。 圖6係在下述的照射條件中，顯示各陰極電壓時，對 於燈絲12之輸入電力與電子束之輸出的關係的圖。圖6中 係分別以黑菱形顯示陰極電壓為l.OkV時所得的結果，以 黑圈顯示陰極電壓為1.2kV時所得的結果，再者，以黑三 角顯示陰極電壓為1.4kV時所得的結果。• Cathode voltage: 1.2kV • FC distance: 2.6mm, 4.2mm Compared with the case of setting 4.2mm, when the FC distance is set to 2.6mm, the output of the electron beam EB is set to 17kV for the filament 12 The input power can be reduced by about 10%. In this one, which can be regarded as a short F-C distance, the hot electrons emitted from the filament 12 are easily introduced into the cathode electrode 13. Fig. 6 is a graph showing the relationship between the input electric power to the filament 12 and the output of the electron beam when each cathode voltage is displayed in the following irradiation conditions. Fig. 6 shows the results obtained when the cathode voltage is 1.0 kV in black diamonds, and the result obtained when the cathode voltage is 1.2 kV in black circles, and the result obtained when the cathode voltage is 1.4 kV in black triangles. .
•陰極電壓：l.OkV、1.2kV、1.4kV • F-C 距離：2.6mm 電子束EB之輸出為17kV時的對於燈絲12之輸入電 力係陰極電壓越高而變得越小。此可視為只要陰極電壓較 Z) 15 201142898 高’燈絲12釋出的熱電子容易被引入陰極電極13之故。 然而，由個別的陰極電壓相關曲線圖的斜率可知，陰極電 壓越低’就越能提高電子束EB之輸出的控制性（即圖6中， 陰極電壓越低，曲線圖之斜率就越缓和）。 圖7係在下述的照射條件中’顯示各f-C距離時，對 於陰極電極13之輸入電壓與電子束EB之輸出的關係的 圖。另外’對於陰極電極13的輸入電壓係指：陰極電壓， 以及於燈絲12與陰極電極13之間的流動的電流之積。圖 7中係分別以黑圈顯示F-C距離為2.6mm時所得的結果，• Cathode voltage: 1.0 volt, 1.2 kV, 1.4 kV • F-C distance: 2.6 mm The input power to the filament 12 when the output of the electron beam EB is 17 kV is smaller as the cathode voltage is higher. This can be considered as long as the cathode voltage is higher than that of Z) 15 201142898, and the hot electrons released from the filament 12 are easily introduced into the cathode electrode 13. However, from the slope of the individual cathode voltage correlation graph, it can be seen that the lower the cathode voltage is, the more the controllability of the output of the electron beam EB can be improved (i.e., the lower the cathode voltage in Fig. 6, the more the slope of the graph is moderated) . Fig. 7 is a view showing the relationship between the input voltage of the cathode electrode 13 and the output of the electron beam EB when the respective f-C distances are displayed in the following irradiation conditions. Further, the input voltage to the cathode electrode 13 means the cathode voltage and the product of the current flowing between the filament 12 and the cathode electrode 13. In Fig. 7, the results obtained when the F-C distance is 2.6 mm are shown by black circles, respectively.
另一方面，以黑四角顯示F-C距離為4.2mm時所得的結果。 •陰極電壓：1.2kV • F-C 距離：2.6mm、4.2mm 與設定為4.2mm的情況相較可知，將F_c距離設定為 2.6mm的情況時，電子束EB之輸出設為17kv時的對於陰 極電極13之輸入電力可減低約4〇%。此可視為主 距離較短的一方中，其熱輻射的視角因即 從燈絲12輻射的熱之中，到達陰極電極13的熱之比例變 大之故。又’由於空間電荷之量受到限制，所以F_c距離 越大，就越需要較高的陰極電壓也可視為原因之一。 其次，分刺定搭载本實卿態之發射部4()的搶 H) ’以及搭載習知發射部’即燈絲支柱 展而變形的發射部的電子搶之輸出穩定性。另電子‘ 及電子槍電源的額定輸出為3〇kw(加速電壓2〇kVxi 又，測定時間約為30小時。 · ^ 圖8⑻係顯示本實施形態的電子搶1〇之測定結果，圖 201142898 8(b)係顯示習知構成的電子搶之測定結果。 習知構成的電子槍中，為了防止因燈絲之變形（伸展） 造成與陰極電極之接觸，係將F-C距離設定為4.2mm。習 知構成的電子搶中，相對於射束電流值850mA，有+3mA/ — 2mA之射束電流值的變動。 另一方面，本實施形態的電子搶1〇中，由於燈絲支柱 42、43會變形以吸收燈絲12之伸展，所以將F_c距離設 定為2.6mm。在該電子槍丨〇中，相對於射束電流值 850mA，觀察到有+ lmA/_ lmA之射束電流值的變動。即 相較於習知構成，本實施形態的電子搶1〇係可將射束電流 值之變動幅度改善為1/2.5。 此可視為可藉由本實施形態的發射部4〇，減少通電時 的燈絲12與陰極電極13之距離的變動之故。又，可視為 由於縮短了燈絲12與陰極電極π之距離，所以可將陰極 電壓设定較低，電子束EB之輸出的控制性變佳之故。 其次，本實施形態的電子搶10與習知構成的電子搶 中’分別針f十25條燈絲’以對燈絲開始通電至燈絲斷線為 止的動作時間作為燈絲壽命(filament Ufe)進行測定。從各 電子槍射出的電子束EB之輸出為17k W。 圖9⑻係騎本實卿態的電子槍丨Q之測定結果，圖 9(b)係顯示習知構成的電子槍之測定結果。 使用習知構成㈣子槍之燈絲壽命的平均值為⑹小 時。=-方面，使用本實施形態的電子搶之燈絲壽命的平 均值為875小時。此結果，相較於習知構成的電子搶，本 實施形態的電子搶10可使燈絲壽命為平均㈣約13倍。 201142898 此可視為藉由本實施形態的發射部40可減低施加於燈絲 12的應力之故。又，可視為由於可縮短燈絲12與陰極電 極13之間的距離，所以即使輸入至燈絲12的電力較少也 可將陰極電極13提升至所需溫度，且可抑制燈絲溫度之 故。 通常，電子槍的燈絲係可藉由折彎加工線材而得。因 本實施形態的燈絲12並未進行折彎加工，而是以具有彎曲 部12a的形式從一片金屬板切出線材所成。因而，相對於 此種燈絲，本實施形態的燈絲12，由於加工畸變較少，所 以熱變形較少。因此，在供給交流電流至燈絲12之際，相 較於藉由線材之折彎加工所製作成的燈絲，燈絲12面向陰 極電極13之方向的位移更受到抑制。換句話說，此等燈二 12與陰極電極13之距離(F-C距離）可穩定化。故而，在獲 得電子束EB之輸出的方面，因F-C距離穩定，就可更緩 和燈絲12之加熱條件。因而’可提高從電子搶1〇釋放的 電子束EB之輸出的穩定性。 上述構成的電子槍係可用於各種的處理裳置中。處 理裝置係例如：熔解裝置、表面處理裝置、成獏裂置。例 如，在成膜裝置中’可使用上述的電子搶10作為加熱源， 將保護膜（例如氧化鎂：Mgo)成膜於基板表面。此時，例 如，電子槍10係固定於處理室（蒸鍍室）之側壁，該電子柃 10射出的電子束EB，藉由偏向器等，照射於蒸發源之室= 的氧化鎂的蒸發點。藉由該電子束EB而產生氧化鎮之— 發流，使該蒸發流流通地，於移動載體上搭載的基板表面蒸 形成氧化鎂之被覆膜。因從電子搶10射出的電子束 201142898 定化，可敎地經氧傾之蒸發流，所㈣於基板表面 形成均勻的被覆膜。料，被覆膜的材料，除了氧化鎮以 外’還可使用選自包含二氧化石夕（Si〇2)、二氧化欽(Ti〇2)、 鋁（A1)、鎳鈷合金（c〇Ni)、銅（Cu)之群組的至少一個金屬、 金屬氧化物、金屬化合物等的蒸鍍材料。即使在其他的處 理裝置’同樣地，也可進行穩定的處理。 处 如以上所記載，依據本實施形態，可獲得以下效果。 (1) 電子槍10係包含為了藉由熱電子加熱陰極電極 而被通電的燈絲12 ;以及支持該燈絲12之作為支持° 13 的燈絲支柱42、43。燈絲支枉42、43係分別具有安構件 絲12的前端部42c、43c;以及囡定於基座41的固定f農燈 43a。各燈絲支柱42、43係按照因通電而發生於燈絲42&、 伸展’使前端部42c、43c位移。 …U之 因此’藉由支持燈絲12的燈絲支柱42、43之卞山 42c、43c位移，吸收燈絲12之伸展，所以可抑制部 之彎曲部12a的位移量。因而，可抑制燈絲12與陴極糸12 13之間的距離變動。此結果，可使電子束EB f電極 化。 <輸出穩定 (2) 燈絲12係因通電而發生伸展。然後，燈鮮、支 43係按照對燈絲12通電中之熱，使支持燈絲12的< =、 42c、43c位移。因而，可按照因通電中之熱而發生=端# 12之伸展使燈絲支柱42、43之前端部42c、4赴位、燈絲 可吸收燈絲12之伸展。 移，且 (3) 燈絲支桎42、43係按照燈絲12之伸展，使a 燈絲12的前端部42c、43c沿著燈絲12之伸展方向多有 19 201142898 因而，由於可藉由燈絲支柱42、43之前端部42c、43c的 位移來吸收燈絲12之伸展，所以可抑制燈絲12與陰極電 極13之間的距離變動。 (4) 燈絲支柱42、43係按照燈絲12之伸展，使個別的 前端部42c、43c相互地朝相反方向位移。由於燈絲12之 腳部12b分別固定於二燈絲支柱42、43，所以燈絲12之 伸展係朝向二端部（即二腳部12b)之方向發生。因而，藉由 使燈絲支柱42、43之前端部42c、43c相互地朝相反方向 位移，就可輕易地吸收發生於燈絲12的伸展。 (5) 燈絲支柱42、43係包含具有互異熱膨脹係數的複 數個構件Bl、B2而構成。因而，藉由構件Bl、B2之線膨 脹係數（即熱膨脹係數）的差，就可使前端部42c、43c按照 熱輕易地位移。 (6) 電子槍10係抑制燈絲12與陰極電極13之間的距 離變動，以使電子束EB之輸出穩定化。因而，處理裝置 中，可穩定地進行使用電子束EB的處理、例如對象物之 加熱。 另外，上述實施形態係顯示一例者，各構件的形狀等 亦可適當變更。以下顯示變化例之一部分。 •上述實施形態中，雖然將支持燈絲12的支持構件形 成如燈絲支柱42、43的「柱」之形狀，但是該「柱」之形 狀，可為圓柱狀、角柱狀、或是其他的形狀。換句話說，「支 持構件」之形狀，並不被限定於如圖2、圖4所示的燈絲 支柱42、43。 •上述實施形態中，雖然藉由二構件Bl、B2分別構 20 201142898 j支持部42b、43b，但除了各支持部42b、43b以外，各 前端部42c、43c也可藉由構件m、B2而構成。又，亦可 藉由構件Bl、B2構成各燈絲支柱42、43全體。 •上述實施形態中係以鉬（M〇)與钽(Ta)作為各燈絲支 =42、43之構件Bl、B2。然而，構件m與構件B2之詛 2不限於上述實施形態，只要可依_脹賊之差來吸 翻：即可：例如，亦可以鶴(W)作為構件B1，以On the other hand, the results obtained when the F-C distance was 4.2 mm were shown in black squares. • Cathode voltage: 1.2kV • FC distance: 2.6mm, 4.2mm Compared with the case of setting 4.2mm, when the F_c distance is set to 2.6mm, the output of the electron beam EB is set to 17kv for the cathode electrode. The input power of 13 can be reduced by about 4%. This is considered to be the one in which the main distance is short, and the angle of heat radiation is increased from the heat radiated from the filament 12 to the temperature of the cathode electrode 13. Moreover, since the amount of space charge is limited, the larger the F_c distance, the higher the cathode voltage is required, which can be regarded as one of the causes. Next, the output of the electronic unit that is equipped with the transmitting unit 4() of the present state is captured and the electronic unit is equipped with the transmitting unit that is deformed by the filament assembly. The rated output of the electronic ' and electron gun power supply is 3〇kw (acceleration voltage 2〇kVxi, and the measurement time is about 30 hours. · ^ Fig. 8(8) shows the measurement result of the electronic grab 1 of this embodiment, Fig. 201142898 8 ( b) shows the result of the measurement of the electronic stimuli of the conventional configuration. In the electron gun of the conventional configuration, in order to prevent contact with the cathode electrode due to deformation (stretching) of the filament, the FC distance is set to 4.2 mm. In the electronic grab, there is a variation in the beam current value of +3 mA / 2 mA with respect to the beam current value of 850 mA. On the other hand, in the electronic grabbing of the present embodiment, the filament stays 42 and 43 are deformed to absorb. Since the filament 12 is extended, the F_c distance is set to 2.6 mm. In the electron gun, a change in the beam current value of + lmA/_lmA is observed with respect to the beam current value of 850 mA. According to the configuration of the present invention, the fluctuation range of the beam current value can be improved to 1/2.5. This can be regarded as the reduction of the filament 12 and the cathode electrode at the time of energization by the emitter portion 4 of the present embodiment. 13 distance change Further, it can be considered that since the distance between the filament 12 and the cathode electrode π is shortened, the cathode voltage can be set low, and the controllability of the output of the electron beam EB can be improved. The electronic rush of the conventional configuration is divided into "five 25 filaments" to measure the filament life (filament Ufe) until the filament is energized until the filament is broken. The output of the electron beam EB emitted from each electron gun Fig. 9(8) shows the measurement result of the electron gun 丨Q of the actual state, and Fig. 9(b) shows the measurement result of the electron gun of the conventional configuration. The average value of the filament life of the conventional constitutive (4) sub-gun is (6) Hours. In the aspect of the present invention, the average value of the lifetime of the filament used in the electronic embossing of the present embodiment is 875 hours. As a result, the electronic robbing of the present embodiment can make the life of the filament average. (4) about 13 times. 201142898 This can be seen that the radiation applied to the filament 12 can be reduced by the emitting portion 40 of the present embodiment. Further, it can be considered that the distance between the filament 12 and the cathode electrode 13 can be shortened. Therefore, even if the electric power input to the filament 12 is small, the cathode electrode 13 can be raised to a desired temperature, and the filament temperature can be suppressed. Generally, the filament of the electron gun can be obtained by bending a wire. The filament 12 is not bent, but is formed by cutting a wire from a single metal plate in the form of a curved portion 12a. Therefore, with respect to such a filament, the filament 12 of the present embodiment has less distortion due to processing. Therefore, the thermal deformation is less. Therefore, when the alternating current is supplied to the filament 12, the displacement of the filament 12 in the direction facing the cathode electrode 13 is more suppressed than that of the filament formed by the bending of the wire. In other words, the distance (F-C distance) between the lamps 12 and the cathode electrode 13 can be stabilized. Therefore, in terms of obtaining the output of the electron beam EB, the heating condition of the filament 12 can be more moderated because the F-C distance is stabilized. Thus, the stability of the output of the electron beam EB released from the electrons can be increased. The electron gun system constructed as described above can be used in various processing skirts. The processing means are, for example, a melting device, a surface treating device, and a cleaving. For example, in the film forming apparatus, a protective film (e.g., magnesium oxide: Mgo) can be formed on the surface of the substrate by using the above-described electron grab 10 as a heating source. In this case, for example, the electron gun 10 is fixed to the side wall of the processing chamber (vapor deposition chamber), and the electron beam EB emitted from the electron beam 10 is irradiated to the evaporation point of the magnesium oxide in the chamber of the evaporation source by a deflector or the like. The electron beam EB is used to generate an oxidized gas, and the evaporation flow is caused to flow, and a surface of the substrate mounted on the movable carrier is vaporized to form a coating film of magnesium oxide. Due to the electron beam 201142898 emitted from the electron grab 10, it can be vaporized by the oxygen vapor, and (4) a uniform coating film is formed on the surface of the substrate. The material of the coating film, in addition to the oxidized town, may also be selected from the group consisting of cerium dioxide (Si〇2), cerium oxide (Ti〇2), aluminum (A1), and nickel-cobalt alloy (c〇Ni). And a vapor deposition material of at least one metal, metal oxide, metal compound or the like of the group of copper (Cu). Even in the case of other processing devices, stable processing can be performed. As described above, according to the present embodiment, the following effects can be obtained. (1) The electron gun 10 includes a filament 12 that is energized to heat the cathode electrode by hot electrons, and a filament support 42, 43 that supports the filament 12 as a support 13 . The filament supports 42, 43 respectively have front end portions 42c, 43c of the anchor member 12; and fixed f-lights 43a fixed to the base 41. Each of the filament stays 42 and 43 is displaced by the filament 42 & extension and the front end portions 42c and 43c. Therefore, the displacement of the filament 12 is absorbed by the displacement of the domes 42c and 43c supporting the filament stays 42, 43 of the filament 12, so that the amount of displacement of the curved portion 12a of the portion can be suppressed. Therefore, the variation in the distance between the filament 12 and the drain 糸 12 13 can be suppressed. As a result, the electron beam EB f can be polarized. <Output is stable (2) The filament 12 is stretched due to energization. Then, the lamp and the branch 43 are displaced by the heat in the energization of the filament 12 to support the filaments 12 <=, 42c, 43c. Therefore, the extension of the filament ends 42c, 43 can be placed in the position of the front end portions 42c, 4 of the filament stays 42, 43 in accordance with the heat generated by the energization during the energization, and the filament can absorb the extension of the filament 12. And (3) the filament support 42, 43 is extended according to the filament 12, so that the front end portions 42c, 43c of the a filament 12 are more along the extending direction of the filament 12 19 201142898, thus, by the filament support 42, The displacement of the front end portions 42c, 43c of 43 is to absorb the extension of the filament 12, so that the variation in the distance between the filament 12 and the cathode electrode 13 can be suppressed. (4) The filament stays 42, 43 are displaced in accordance with the extension of the filament 12 so that the individual leading end portions 42c, 43c are mutually displaced in opposite directions. Since the leg portions 12b of the filament 12 are respectively fixed to the two filament stays 42, 43, the extension of the filament 12 occurs toward the two end portions (i.e., the two leg portions 12b). Therefore, by causing the front end portions 42c, 43c of the filament stays 42, 43 to be displaced in opposite directions to each other, the stretching occurring in the filament 12 can be easily absorbed. (5) The filament stays 42, 43 are composed of a plurality of members B1 and B2 having mutually different thermal expansion coefficients. Therefore, the tip end portions 42c, 43c can be easily displaced in accordance with the heat by the difference in the coefficient of linear expansion of the members B1, B2 (i.e., the coefficient of thermal expansion). (6) The electron gun 10 suppresses the variation in the distance between the filament 12 and the cathode electrode 13 to stabilize the output of the electron beam EB. Therefore, in the processing apparatus, the processing using the electron beam EB, for example, the heating of the object can be stably performed. Further, in the above embodiment, an example is shown, and the shape and the like of each member can be changed as appropriate. The following shows a part of the variation. In the above embodiment, the support member for supporting the filament 12 is formed in the shape of a "column" such as the filament stays 42, 43. However, the shape of the "column" may be a columnar shape, a prismatic shape, or another shape. In other words, the shape of the "support member" is not limited to the filament stays 42, 43 as shown in Figs. 2 and 4 . In the above embodiment, the support members 42b and 43b are respectively configured by the two members B1 and B2. However, the front end portions 42c and 43c may be formed by the members m and B2 except for the support portions 42b and 43b. Composition. Further, the entire filament stays 42, 43 may be formed by the members B1 and B2. In the above embodiment, molybdenum (M〇) and tantalum (Ta) are used as the members B1 and B2 of the respective filament ends = 42 and 43. However, the member 2 and the member B2 are not limited to the above embodiment, as long as they can be absorbed by the difference of the swell thief: for example, the crane (W) can also be used as the member B1.
Dp ’或是以鶴作為構件Bl，以组作為構件B2。 亦即’二構件B1、B2 〜3之外侧的第—構只/選擇位於各燈絲支柱 小於位於各燈絲支柱42 4，之線膨脹係數(熱膨脹係數)， 脹係數(熱膨脹係數）即可。之内侧的第二構件B2之線膨 又’構件Bl、B2之屋痄弋且ώ 因燈絲12之埶膨脹所、“厚度或長度’只要設定為可對應 43之前端位移即可一成的變形量而使各燈絲支桎42、 亦可適虽變更上述實施形 如，如圖10所示，亦可 电于糌1之構成。例 量調節器63、64之所抑/、—聚焦線圈61、62與二流 發明具體化》 明-段聚焦型之電子搶60中，將本 增亦：當f更上述實施形態的燈絲12之形狀、加工 万/¾等。例如，如圖η 刀工 線材的燈絲7卜 所不，亦可使用採用剖面呈圓形之 _ = ;絲控制之例，但可亦於藉 J珣出的裝置中，將本發明具體化。 201142898 【圖式簡單說明】 圖1係一實施形態的電子槍概略構成圖。 圖2係設置於圖1的電子槍之發射部的概略構成圖。 圖3係顯示圖1的燈絲之一例的立體圖。 圖4(a)及(b)係設置於圖1的電子槍之發射部的說明 .圖5係顯示圖1之電子搶中的輸入於燈絲的輸入電力 與電子束輸出之關係的曲線圖。 圖6係顯示圖1之電子搶中的輸入於燈絲的輸入電力 與電子束輸出之關係的曲線圖。 圖7係顯示圖丨之電子搶中的輸入於陰極 電力與電子束輸出之關係的曲線圖。 的輪入 定性評估結果的)波形員:1之電子搶中的電子束之輸出穩 評估==示圖1之電子搶中的燈絲之耐用時間 圖10係另一電子槍的概略構成圖。 圖11係另一燈絲的立體圖。 【主要元件符號說明】 10 :電子搶 11a :凸緣 12a :彎曲部 12c :彎曲 14 :離子收集器 11 :框體 12 :燈絲 12b :腳部 13 :陰極電極 15 :韋乃耳特電極 22 201142898 16 :陽極電極 17 :流量調節器 18 :聚焦線圈 19 :擺動線圈 21 :燈絲電源 22 :陰極電源 23 :加速電源 30 :處理裝置 30a :側壁 31 :對象物（蒸鍍材料) 40 :發射部 41 :基座 42 :燈絲支柱 42a :固定部 42b :支持部 43b :支持部 42c :前端部 43 :燈絲支柱 43a :固定部 43c :前端部 44 :絕緣礙子 45 :絕緣礙子 46 :螺帽 47 :螺帽 48 ··設置螺釘 49 :設置螺釘 50 :燈絲配線 51 :燈絲配線 52 :絕緣體 60 :電子搶 61 :聚焦線圈 62 :聚焦線圈 63 :流量調節器 64 :流量調節器 71 :燈絲 A :光車由 B1 :第一構件 B2 :第二構件 EB :電子束 Lsa :距離 Lsb :距離 23Dp ' either takes the crane as the component B1 and the group as the component B2. That is, the first structure / the outer side of the two members B1, B2 to 3 is selected to be located at each of the filament struts smaller than the linear expansion coefficient (thermal expansion coefficient) and the expansion coefficient (thermal expansion coefficient) of each of the filament struts 42 4 . The line of the second member B2 on the inner side is expanded and the eaves of the members B1 and B2 are expanded by the enthalpy of the filament 12. The thickness or length can be set to a deformation corresponding to the displacement of the front end of 43. The filament support 42 may be changed in size as described above, and as shown in Fig. 10, it may be electrically connected to the crucible 1. The adjustment regulators 63, 64 suppress the / focus coil 61. , 62 and the second embodiment of the invention, the highlight-segment focusing type of electronic grab 60, the increase is also: when f is the shape of the filament 12 of the above embodiment, processing million / 3⁄4, etc. For example, as shown in Figure η knife wire The filament 7 can be used as an example of a wire control with a circular cross section, but the invention can be embodied in a device which is also J. 201142898 [Simple description of the drawing] Fig. 1 Fig. 2 is a schematic view showing a configuration of an emitting portion of the electron gun of Fig. 1. Fig. 3 is a perspective view showing an example of the filament of Fig. 1. Fig. 4 (a) and (b) The description of the transmitting portion of the electron gun of Fig. 1. Fig. 5 shows the input of the electronic grab of Fig. 1. Graph of the relationship between the input power of the wire and the output of the electron beam. Fig. 6 is a graph showing the relationship between the input power input to the filament and the output of the electron beam in the electronic grab of Fig. 1. Fig. 7 shows the electronic grab of Fig. The graph of the relationship between the input of the cathode power and the output of the electron beam. The waveform of the round-point qualitative evaluation results: the output of the electron beam in the electronic grab of 1 is stable evaluation == the filament of the electronic grab in Figure 1. Fig. 11 is a perspective view of another electron gun. Fig. 11 is a perspective view of another filament. [Description of main components] 10: electronic grab 11a: flange 12a: bent portion 12c: curved 14: ion collector 11 : Frame 12 : Filament 12b : Foot 13 : Cathode electrode 15 : Vernet electrode 22 201142898 16 : Anode electrode 17 : Flow regulator 18 : Focus coil 19 : Swing coil 21 : Filament power supply 22 : Cathode power supply 23 : Acceleration power supply 30: processing device 30a: side wall 31: object (vapor deposition material) 40: emission unit 41: susceptor 42: filament support 42a: fixing portion 42b: support portion 43b: support portion 42c: front end portion 43: filament support 43a: Fixed portion 43c: front end portion 44: insulating obstruction 45: insulating obstruction 46: nut 47: nut 48 · setting screw 49: providing screw 50: filament wiring 51: filament wiring 52: insulator 60: electronic grab 61: Focusing coil 62: Focusing coil 63: Flow regulator 64: Flow regulator 71: Filament A: Light vehicle by B1: First member B2: Second member EB: Electron beam Lsa: Distance Lsb: Distance 23