TW201140974A - Group-iii nitride semiconductor laser element, and method of manufacturing the same - Google Patents

Group-iii nitride semiconductor laser element, and method of manufacturing the same Download PDF

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TW201140974A
TW201140974A TW099140581A TW99140581A TW201140974A TW 201140974 A TW201140974 A TW 201140974A TW 099140581 A TW099140581 A TW 099140581A TW 99140581 A TW99140581 A TW 99140581A TW 201140974 A TW201140974 A TW 201140974A
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nitride semiconductor
laser
axis
substrate
degrees
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Shimpei Takagi
Yusuke Yoshizumi
Koji Katayama
Masaki Ueno
Takatoshi Ikegami
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Sumitomo Electric Industries
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    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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Abstract

In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces, and the first surface is opposite to the second surface. Each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The support base of the laser structure has a recess provided at a portion of the edge of the first surface in the first fractured face. The recess extends from a back surface of the support base, and an end of the recess is apart from the edge of the second surface of the laser structure.

Description

201140974 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種III族氮化物半導體雷射元件及製作 族氮化物半導體雷射元件之方法。 【先前技術】 專利文獻1中記載有雷射裝置。若將自{〇〇〇1}面向等價 於[1-100]方向的方向以28.1度傾斜之面作為基板之主面， 則2次解理面成為相對於主面及光諧振器面該兩者垂直之 {11-20}面，雷射裝置成為長方體狀。 專利文獻2中記載有氮化物半導體裝置。對用於劈開之 基板之背面進行研磨，使總層厚薄膜化而成為1〇〇 μιη& 右。將介電質多層膜堆積於解理面。 專利文獻3中記載有氮化物系化合物半導體元件。氮化 物系化合物半導體元件中使用之基板中，包含貫通差排密 度為3xl〇6 cm-2以下之氮化物系化合物半導體貫通差排 密度於面内大致均勻。 專利文獻4中記載有氮化物系半導體雷射元件。氮化物 系半導體雷射元件中，如下所示形成解理面。對於以自半 導體雷射元件層及於η型GaN基板之方式藉由蝕刻加工而 形成的凹部’一方面避開η型GaN基板之諧振器面之蝕刻 口工時所形成的凸部’一方面使用雷射刻劃器，於與脊狀 °Ρ之延伸方向正交的方向以虛線狀（約40 μιη間隔）形成刻 劃槽。Λίι ΡΙ 且’於刻劃槽之位置將晶圓劈開。另外，此時， Ρ等未形成刻劃槽之區域係，以鄰接之刻劃槽為起點而 152214.doc 201140974 被劈開。結果’ s件分離面分別形成為包含㈣㈣基板 之（0001)面之解理面。 專利文獻5中記載有發光元件。根據發光元件，容易實 現長波長之發光，而無損於發光層之發光效率。 專利文獻6中記載有具有接觸阻抗降低之對向電極構造 之氮化物半導體元件。氮化物半導體基板具有第1主面及 第2主面。氣化物半導體基板中包含結晶成長面含有（〇〇〇1) 面之區域。氮化物半導體層係積層於該氮化物半導體基板 之第1主面上。上述第2主面之第2區域内形成凹部槽。上 述氮化物半導體基板之第丨主面之上部具有脊形狀之條 紋。藉由劈開而製作諸振器。 非專利文獻1中，記載有於半極性（ίο-ll)面上，將波導 设於傾斜方向，而利用反應性離子蝕刻法形成鏡面的半導 體雷射。 先前技術文獻 專利文獻 專利文獻1:日本專利特開2001_230497號公報 專利文獻2:曰本專利特開2〇〇5_35369〇號公報 專利文獻3:曰本專利特開2〇〇7_184353號公報 專利文獻4:曰本專利特開2〇〇9·〇81336號公報 專利文獻5:曰本專利特開2〇〇8_235804號公報 專利文獻ό:曰本專利特開2〇〇5_159278號公報 非專利文獻 非專利文獻 1 : Jpn. J. Appl_ Phys. Vol. 1〇 (2007) L444 152214.doc 201140974 【發明内容】 發明所欲解決之問題 根據氮化鎵系半導體之能帶構造，存在可實現雷射振盪 之若干躍遷。根據發明者之觀點，認為，於使用（；軸向爪軸 之方向傾斜的半極性面之支持基體的ΙΠ族氮化物半導體雷 射元件中’當使雷射波導沿由c軸及m轴所規定之面延伸 時，可降低閾值電流。該雷射波導之方向下，其中之躍遷 能量（傳導帶能量與價帶能量之差）最小之模式可實現雷射 振盡’當可實現該模式之振盪時，可降低閾值電流。 然而，該雷射波導之方向下，因諧振鏡之緣故，無法利 用C面、a面或者m面等先前之解理面。因此，為了製作諧 振鏡’使用反應性離子蝕刻（Reactive i〇n etching ，RIE) 而形成有半導體層之乾式蝕刻面。作為利用RIE法形成之 諧振鏡，期望在對於雷射波導之垂直性、乾式蝕刻面之平 坦性或者離子損傷等方面進行改善。而且，當前之技術水 平下用於獲得良好的乾式蝕刻面之製程條件的導出成為較 大的負擔。 據發明者所知，目前為止，在形成於上述半極性面上之 III族氮化物半導體雷射元件中，延伸於c軸之傾斜方向（傾 斜方向）的雷射波導及不使用乾式蝕刻而形成的諧振鏡用 端面該兩者均未實現。 另一方面，於c面上製作III族氮化物半導體雷射元件 時，當利用先前之解理面而形成諧振鏡時，於磊晶面側之 薄膜上形成刻劃槽，並且藉由刮刀對基板背面之按壓而製 152214.doc 201140974 而’如已有說明所述’在延伸於C軸之傾斜 方向（傾斜方向）的雷射波導之方向下’無法利用先前之解 理面製作諧振鏡。根據發明者之觀點，於使用e軸向m輛之 方向傾斜之半極性面的基板之m族氮化物半導體雷射元件 中，可將與解理面不同之端面用作譜振鏡。該端面係藉由 在薄膜之磊晶面側上形成刻劃槽且對基板之背面側之按壓 而製作。纟a月者等人關於將利用t亥方法之端面改善成適於 諧振鏡之更佳品質進行討論。本發明係鑒於上述情況而研 製。本申请案之申請人關於包含用於光諧振器之割斷面的 III族氮化物半導體雷射元件進行專利申請（日本專利特願 2009-144442號）。 本發明之目的在於，提供一種ΙΠ族氮化物半導體雷射元 件，其係於自六方晶系ΠΙ族氮化物之c軸向m軸之方向傾 斜之支持基體的半極性面上，具有表現出用於諧振鏡之高 品質且可實現低閾值電流之雷射諧振器，且目的又在於提 供一種製作III族氮化物半導體雷射元件之方法。 解決問題之技術手段 本發明之一態樣之III族氮化物半導體雷射元件中具有： (a)雷射構造體，其包含含有六方晶系m族氮化物半導體 且具有半極性主面的支持基體、及設於上述支持基體之上 述半極性主面上的半導體區域；（b)電極，其設於上述雷射 構造體之上述半導體區域上。上述半導體區域包含含有第 1導電型氣化鎵系半導體之第1包覆層、含有第2導電型氛 化鎵系半導體之第2包覆層、以及設於上述第丨包覆層與上 152214.doc 201140974 述第2包覆層之間的活性層，上述第1包覆層、上述第2包 覆層及上述活性層係沿上述半極性主面之法線轴排列，上 述活性層包含氮化鎵系半導體層，上述支持基體之上述六 方晶系III族氮化物半導體之c軸係，相對於上述法線軸而 向上述六方晶系ΙΠ族氮化物半導體之m軸的方向以有限之 角度ALPHA傾斜，上述法線軸與上述六方晶系in族氣化 物半導體之c軸所成的上述角度ALPHA係於45度以上80度 以下或100度以上135度以下之範圍，上述雷射構造體包含 與由上述六方晶系III族氮化物半導體之m軸及上述法線轴 所規定的m-n面交又之第1及第2割斷面，該in族氮化物半 導體雷射元件之雷射諧振器包含上述第1及第2割斷面，上 述雷射構造體包含第1及第2面，上述第1面係上述第2面之 相反側之面’上述半導體區域位於上述第2面與上述支持 基體之間，上述第1及第2割斷面分別自上述第丨面之邊緣 延伸至上述第2面之邊緣’上述雷射構造體之上述支持基 體於上述第1割斷面具有設於上述第1面之上述邊緣之一部 分的凹部，該凹部自上述支持基體之背面延伸，且該凹部 之末端與上述半導體區域之上述第2面之邊緣相隔。 根據該III族氮化物半導體雷射元件，作為雷射諧振器之 第1及第2割斷面與由六方晶系ΠΙ族氛化物半導體之m軸及 法線軸所規定的m-n面交叉，因此，可設置延伸於m_n面與 半極性面之交叉線的方向之雷射波導。因此，可提供一種 具有能實現低閾值電流之雷射諧振器之ΙΠ族氮化物半導體 雷射元件。 152214.doc 201140974 而且，於小於45度及超過135度之角度，藉由按壓而形 成之端面包含爪面的可能性變高。於超過80度且小於100度 之角度’有無法獲#所需平坦性及垂直性之虞。 進而，與刻劃痕相對應之凹部自支持基體之背面延伸， 並且該凹部之末端與半導體區域之第2面（磊晶面）之邊緣相 隔。因此，露出於割斷面之活性層端面具有良好之平坦 性。而且’該凹部對割斷進行導引，割斷中較大之彎曲力 矩產生於包含活性層之半導體積層之磊晶面側的半導體 上’從而認為該力矩分佈使割斷面之品質變得良好。 本發明之III族氮化物半導體雷射元件中，較佳為，上述 支持基體之厚度為400 μπι以下。該ΠΙ族氮化物半導體雷射 元件中’適於獲得用於雷射諧振器之優良之割斷面。 本發明之III族氮化物半導體雷射元件中，更佳為，上述 支持基體之厚度為50 μιη以上100 μηι以下。若厚度5 〇 以 上’則操作變得容易，且生產良率提高。若為1〇〇 μιηα 下，則進一步適於獲得用於雷射諧振器之優良之割斷面。 本發明之III族氮化物半導體雷射元件中，上述雷射構造 體之上述凹部可及於上述半導體區域。 本發明之III族氮化物半導體雷射元件中，更佳為，上述 法線軸與上述六方晶系III族氮化物半導體之c軸所成之角 度係於63度以上80度以下或100度以上117度以下之範圍。 該III族氮化物半導體雷射元件中，於63度以上80度以下 或者100度以上117度以下之範圍内，藉由按壓而形成之端 面成為接近垂直於基板主面的面之可能性變高。而且，於 152214.doc 201140974 超過80度且小於100度之角度，有無法獲得所需平坦性及 垂直性之虞。 本發明之III族氮化物半導體雷射元件中，來自上述活性 層之雷射光向上述六方晶系III族氮化物半導體之a軸的方 向偏光。該III族氮化物半導體雷射元件中，可實現低閾值 電流之能帶躍遷具有偏光性。 本發明之in族氮化物半導體雷射元件中，該m族氮化物 半導體雷射元件之LED模式下之光於上述六方晶系ΠΙ族氮 化物半導體之a抽之方向包含偏光成分η、並於將上述六 方BB系III族氣化物半導體之c轴投影至主面之方向包含偏 光成分12，且上述偏光成分Π大於上述偏光成分12。根據 該III族氮化物半導體雷射元件，可使用雷射諧振器而雷射 振盪LED模式下發光強度較大之模式下的光。 本發明之III族氮化物半導體雷射元件中，較佳為，上述 半極性主面係{20-21}面、{10-11}面、{20-2-1}面、及{10_ 1-1 }面中之任一面。 根據該III族氮化物半導體雷射元件，該等典型之半極性 面上’可提供具有能構成該III族氮化物半導體雷射元件之 雷射諧振器之程度的充分之平坦性及垂直性之第1及第2端 面0 本發明之III族氮化物半導體雷射元件中，作為上述半極 性主面’自{20-21}面、{10-11}面、{20-2-1}面、及 1}面中之任一半極性面向m面方向具有-4度以上+4度以下 之範圍之微傾斜的面亦可較佳地作為上述主面。 152214.doc •10· 201140974 根據該III族氮化物半導體雷射元件，於自該等典型之半 極性面偏離之微傾斜面，可提供具有能構成該m族氮化物 半導體雷射7L件之雷射諧振器之程度的充分之平坦性及垂 直性之第1及第2端面。 本發明之III族氮化物半導體雷射元件令，較佳為，上述 支持基體之積層缺陷密度為lxl〇4cm-i以下。 根據該III族氮化物半導體雷射元件，因積層缺陷密度為 lxio4 cm·〗以下，故因偶發事件損壞割斷面之平坦性及/或 垂直性的可能性較低。 本發明之III族氮化物半導體雷射元件中，上述支持基體 可包含 GaN、AlGaN、AIN、InGaN 及 InAlGaN 中之任一 者。 根據該III族氮化物半導體雷射元件，當使用包含該等氮 化鎵系半導體之基板時，可獲得能用作諧振器之第1及第2 端面。當使用A1N基板或者AlGaN基板時，可提高偏光 度，且可藉由低折射率而強化光束缚。當使用InGaN基板 時，可減小基板與發光層之晶格失配率，且可提高結晶品 質。 本發明之III族氮化物半導體雷射元件中，可進而設有設 於上述第1及第2割斷面中之至少一面上的介電多層膜。 該III族氮化物半導體雷射元件中，亦可對斷裂面亦適用 端面塗佈》藉由端面塗佈，可調整反射率。 本發明之III族氮化物半導體雷射元件中，上述活性層可 包含以發出波長360 nm以上600 nm以下之光的方式而設置 152214.doc 201140974 之量子井構造。該III族氮化物半導體雷射元件藉由半極性 面之利用可獲得有效利用有LED模式之偏光的III族氮化物 半導體雷射元件，從而可獲得低閾值電流。 本發明之III族氮化物半導體雷射元件中，更佳為，上述 活性層包含以產生波長為430 nm以上550 nm以下之光之方 式而設置的量子井構造。該III族氮化物半導體雷射元件係 藉由半極性面之利用而減小壓電電場且提高發光層區域之 結晶品質’從而可提高量子效率，可較佳地發出波長430 nm以上5 5 0 nm以下之光。 本發明之III族氮化物半導體雷射元件中，上述第1及第2 割斷面上分別呈現出上述支持基體之端面及上述半導體區 域之端面’上述半導體區域之上述活性層的端面與正交於 包含上述六方晶系氮化物半導體的支持基體之爪轴之基準 面所成之角度係，於由上述III族氮化物半導體之c軸及m 軸所規定之第1平面上成（ALPHA-5)度以上（ALPHA+5)度以 下之範圍的角度。 該III族氮化物半導體雷射元件具有關於自c轴及m轴令 之一者向另一者獲取的角度而滿足上述垂直性之端面。 本發明之III族氮化物半導體雷射元件中，較佳為，上述 角度係於與上述第1平面及上述法線轴正交的第2平面上介 於-5度以上+5度以下之範圍。 該III族氮化物半導體雷射元件具有關於與半極性面之法 線轴垂直的面上所規定之角度滿足上述垂直性之端面。 本發明之III族氮化物半導體雷射元件中，上述電極係於 152214.doc 12 201140974 既定之軸之方向延伸，上述第丨及第2割斷面與上述既定之 軸交又。 本發明之III族氮化物半導體雷射元件中，上述雷射構造 體"T具有用於s亥III族氮化物半導體雷射元件之一對側面， 上述凹部可位於上述一對側面之上述一端。 根據泫III族氮化物半導體雷射元件，凹部係刻劃痕，該 凹部位於—對側面之—端，故而，雷射構造體之雷射條紋 與刻劃線相隔。 本發明之III族氮化物半導體雷射元件中，上述雷射構造 體可具有用於該III族氮化物半導體雷射元件之一對側面， 上述凹部位於上述一對側面之上述一端，上述雷射構造體 之上述支持基體具有與上述凹部相隔之另一凹部，該另一 凹部自上述支持基體之背面延伸，該另_凹部於上述第】 及第2割斷面中之任一者上設於上述第i面的上述邊緣之一 部分，該另一凹部之末端與上述半導體區域之上述第2面 相隔。 根據該III族氮化物半導體雷射元件，當另一凹部及凹部 分別設於第1及第2割斷面時，可於用於雷射構造體之雷射 條紋的第1及第2割斷面之附近分別設置刻劃槽。因此，該 等割斷面可向雷射條紋提供用於諧振鏡之更高品質的端 面0 根據该III族氮化物半導體雷射元件，當另一凹部及凹部 設於第1割斷面_，用於雷射構造體之雷射條紋的割斷面 由2個刻劃槽規定。因此’該割斷面可向雷射條紋提供用 I522I4.doc •13· 201140974 於諧振鏡之更高品質的端面。 本發明之另一態樣係製作III族氮化物半導體雷射元件之 方法。該方法中包括如下步驟：（a)準備含六方晶系ΠΙ族 氮化物半導體且具有半極性主面之基板；形成具有雷射 構造體、陽極電極及陰極電極之基板產物，該雷射構造體 包含形成於上述半極性主面上之半導體區域與上述基板； (C)於上述六方晶系ΠΙ族氮化物半導體之a軸之方向，將上 述基板產物之第1面作局部刻劃；以及藉由對上述基板 產物之第2面之按壓而進行上述基板產物之分離，形成另 一基板產物及雷射條。上述第1面係上述第2面之相反側之 面’上述半導體區域係位於上述第2面與上述基板之間， 上述雷射條具有自上述第1面延伸至上述第2面且藉由上述 分離而形成之第1及第2端面’上述第1及第2端面構成該in 族氮化物半導體雷射元件之雷射諧振器，上述陽極電極及 陰極電極形成於上述雷射構造體上，上述半導體區域包含 含有第1導電型氮化鎵系半導體之第1包覆層、含有第2導 電型氮化鎵系半導體之第2包覆層、以及設於上述第1包覆 層與上述第2包覆層之間的活性層，上述第1包覆層、上述 第2包覆層及上述活性層係沿上述半極性主面之法線軸排 列，上述活性層包含氮化鎵系半導體層，上述基板之上述 六方晶系III族氮化物半導體之c軸係相對於上述法線軸而 向上述六方晶系III族氮化物半導體的m軸之方向以有限的 角度ALPHA傾斜，上述第1及第2端面與由上述六方晶系 III族氮化物半導體之m轴及上述法線轴所規定之m-n面交 152214.doc • 14- 201140974 又。 根據該方法，於六方晶系111族氮化物半導體之a軸之方 向刻劃基板產物之第1面之後’藉由對基板產物之第2面之 按壓而進行基板產物之分離，形成另一基板產物及雷射 條。因此，以由六方晶系III族氮化物半導體之m軸與法線 軸所規定之m-n面交叉之方式，於雷射條形成第1及第2端 面。藉由該端面形成，可向第1及第2端面提供具有能構成 該III族氮化物半導體雷射元件之雷射諧振器之程度的充分 之平坦性、垂直性或者無離子損壞之諧振鏡面》 而且，該方法中，於小於45度及超過13 5度之角度 ALPHA内，藉由按壓而形成之端面包含m面的可能性變 高。而且’於超過80度且小於100度之角度，無法獲得所 需之平坦性及垂直性《雷射波導係於六方晶系III族氮化物 之c軸之傾斜方向延伸’不使用乾式蝕刻面而形成可提供 該雷射波導之諧振鏡端面。 刻劃槽導引雷射條之端面生成’由用於端面生成之按壓 而產生之彎曲力矩產生於包含活性層之半導體積層之磊晶 面側的半導體上。該彎曲力矩於因按壓而產生斷裂之面的 附近表現為極大。藉由按壓，於雷射條形成第丨及第2端 面。該較大之彎曲力矩可對露出於該等端面之活性層端面 提供良好之平坦性，故而較佳》藉由基板產物之分離，刻 劃槽作為刻劃痕而殘留於雷射條。 本發明之方法中，於形成上述基板產物之上述步驟中， 上述基板被施以切片或者研削加工，使上述基板之厚度成 152214.doc 15 201140974 為400 μιη以下，上述第1面可為藉由上述加工而形成之加 工面。或者，可為包含上述加工面上所形成的電極之面。 本發明之方法中，於形成上述基板產物之上述步驟中， 上述基板被施以研磨’使上述基板之厚度為5〇 pm以上1〇〇 μιη以下，上述第1面可為藉由上述研磨而形成之研磨面。 或者’可為包含上述研磨面上所形成的電極之面。 如此之厚度之基板上，可以良好之良率形成具有能構成 該ΙΠ族氮化物半導體雷射元件之雷射諧振器之程度的充分 之平坦性、垂直性或者無離子損壞之第1及第2端面。 本發明之方法中，上述較佳為’角度ALPHA係於63度以 上80度以下及1〇〇度以上i 17度以下之範圍。於小於63度及 超過117度之角度’藉由按壓而形成之端面的一部分可能 會出現111面。而且，於超過80度且小於1〇〇度之角度，無法 獲得所需之平坦性及垂直性。 本發明之方法中，較佳為’上述半極性主面係丨2〇_2 J } 面、{10-11}面、{20-2-1}面、及{10-1-1}面中之任一面。 該等典型之半極性面上，亦可提供具有能夠構成該ΙΠ族 氮化物半導體雷射元件之雷射諧振器之程度的充分之平坦 性、垂直性或者無離子損壞的第1及第2端面。 本發明之方法中’作為上述半極性主面，自{2〇_2ΐ丨 面、{10-11}面、{20-2-1}面、及{ΐ〇_ι·ΐ}面中之任一半極 性面向m面方向具有_4度以上+4度以下之範圍之微傾斜的 面亦可較佳地作為上述主面。 自該等典型之半極性面偏離之微傾斜面上，亦可提供具 152214.doc -16- 201140974 有能夠構成該III族氮化物半導體雷射元件之雷射諧振器之 程度的充分之平坦性、垂直性或者無離子損壞的第丨及第2 端面。 本發明之方法中，上述刻劃係使用雷射刻劃器而進行， 藉由上述刻劃而形成刻劃槽，上述刻劃槽之長度係短於由 • 上述六方晶系m族氮化物半導體之a軸及上述法線軸所規 定的a-n面與上述第丨面之交叉線的長度。 根據該方法，藉由基板產物之割斷，形成另一基板產物 及雷射條。該割斷係使用比雷射條之割斷線更短的刻劃槽 而產生。 本發明之方法中，上述第丨及第2端面各自之上述活性層 之端面，相對於與包含上述六方晶系氮化物半導體之支持 基體的m軸正交之基準面，於由上述六方晶系m族氮化物 半導體之c軸及m軸所規定之平面可成（ALpHA_5)度以上 (ALPHA+5)度以下之範圍的角度。 根據該方法，可形成關於自c軸及m軸中之一者向另一者 獲取之角度具有上述垂直性的端面。 本發明之方法中’上述基板可包含GaN、AIN、 AlGaN、InGaN及InAK}aN中之任一者。根據該方法當使 用包含該等氮化鎵系半導體之基板時，可獲得能用作諸振 器之第1及第2端面。 本發明之方法中，於刻劃上述基板產物之步驟中，可以 與上述III族氮化物半導體雷射元件之元件寬度等值的間距 形成刻劃槽。該方法中可進而包括如下步驟，即，進行上 152214.doc 201140974 述雷射條之分離而製作ΙΠ族氮化物半導體雷射元件。上述 III族氮化物半導體雷射元件之上述雷射構造體具有用於該 III族氮化物半導體雷射元件之一對側面。根據該方法，可 使用以與元件寬度相等之間距形成之刻劃槽而製作雷射 條。以與元件寬度相等之間距排列之刻劃槽係導引割斷之 行進方向。刻劃槽可使位於該等刻劃槽之間的雷射條紋之 端面之品質變得良好。 本發明之方法中’於刻劃上述基板產物之步驟中，可以 與上述III族氮化物半導體雷射元件之元件寬度之複數倍等 值的間距形成刻劃槽。該方法中進而包括如下步驟即， 可進行上述雷射條之分離從而製作ΠΙ族氮化物半導體雷射 元件。上述III族氮化物半導體雷射元件之上述雷射構造體 具有用於該III族氮化物半導體雷射元件之一對側面。根據 該方法，可使用以與元件寬度之複數倍等值的間距所形成 之刻劃槽而製作雷射條。 本發明之一態樣之ΙΠ族氮化物半導體雷射元件中具有： ⑷雷射構造體，其包含含有六方晶系III族氮化物半導體 且具有半極性主面及背面之支持基體、及上述支持基體之 上述半極性主面上所設之半導體區域；以及（b)電極，其設 於上述雷射構造體之上述半導體區域上。上述半導體區域 包含第1導電型包覆層、第2導電型包覆層、及設於上述第 1包覆層與上述第2包覆層之間的活性層，上述第丨導電型 包覆層、上述第2導電型包覆層及上述活性層係沿上述半 極性主面之法線轴而排列，上述支持基體之上述六方晶系 152214.doc •18· 201140974 in族氮化物半導體之c軸係相對於上述法線軸而向上述六 方BB系III族氮化物半導體之瓜軸的方向以角度alpha傾 斜，上述角度ALPHA係於45度以上80度以下或1〇〇度以上 135度以下之範圍，上述雷射構造體包含第1及第2面，上 述第1面係上述第2面之相反側之面，上述半導體區域位於 上述第2面與上述支持基體之間’上述雷射構造體之上述 支持基體，係於上述雷射構造體之端部具有分別設於上述 第1面之邊緣的一端及另一端之第丨及第2刻劃痕，上述第1 及第2刻劃痕係沿由上述法線軸與上述六方晶系m族氮化 物半導體之a轴所規定的平面而延伸，上述第1及第2刻劃 痕係自上述支持基體之上述背面延伸，上述雷射構造體之 上述端部具有將上述第1及第2刻劃痕之上述邊緣及上述雷 射構造體之上述第2面之上述邊緣連接的割斷面，該出族 氮化物半導體雷射元件之雷射諧振器包含上述割斷面。 根據該III族氮化物半導體雷射元件，因與由六方晶系in 族氮化物半導體之m軸及法線軸所規定的m_n面交叉，故 而可設置延伸於m-n面與半極性面之交叉線的方向之雷射 波導。因此，可提供一種具有能實現低閾值電流之雷射諧 振器之III族氮化物半導體雷射元件。而且，於小於45度及 超過135度之角度’藉由按壓而形成之端面包含瓜面的可能 性變南。於超過8 0度且小於1 〇 〇度之角度，有無法獲得所 需平坦性及垂直性之虞》 第1及第2刻劃痕設於雷射構造體之端部。第1及第2刻劃 痕係沿由六方晶系III族氮化物半導體之a轴及法線軸所規 152214.doc •19· 201140974 定之a-n面排列。第1及第2刻劃痕之排列可導引用於雷射 諧振器之割斷面的生成，故而，割斷面設成將刻劃痕之邊 緣與雷射構造體之第2面之邊緣連接，結果，使露出於割 斷面之活性層端面具有良好之平坦性。 刻劃痕自支持基體之背面延伸，割斷中較大之彎曲力矩 產生於包含活性層之半導體積層之磊晶面側的半導體上， 該力矩分佈使割斷面之品質變得良好。 本發明之另一態樣係製作III族氮化物半導體雷射元件之 方法。該方法中包括如下步驟：（a)由六方晶系ΙΠ族氮化 物半導體形成具有雷射構造體、陽極電極及陰極電極之基 板產物’該雷射構造體包含基板及形成於上述基板之半極 性主面上之半導體區域’該陽極電極及陰極電極形成於上 述雷射構造體上；（b)刻劃上述基板產物之第丨面，形成複 數個刻劃槽之排列；以及（c)藉由對上述基板產物之第2面 之按壓而進行上述基板產物之分離，形成另一基板產物及 雷射條。上述基板之上述六方晶系m族氮化物半導體之c 軸係相對於上述法線轴而向上述六方晶系m族氮化物半導 體的m軸之方向以有限的角度aLPha傾斜，上述角度 ALPHA係於45度以上80度以下或1〇〇度以上135度以下之範 圍，上述半導體區域包含第i導電型包覆層、第2導電型包 覆層、及设於上述第1包覆層與上述第2包覆層之間的活性 層，上述第1導電型包覆層、上述第2導電型包覆層及上述 活性層係沿上述半極性主面之法線軸而排列上述第i面 係上述第2面之相反側之面，上述半導體區域位於上述第2 152214.doc 20· 201140974 面與上述基板之間，上述刻劃槽各自沿由上述六方晶系III 族氮化物半導體之a軸與上述法線轴所規定之平面延伸， 上述雷射條具有藉由上述分離而形成之第1及第2端面，上 述第1及第2端面構成該ΠΙ族氮化物半導體雷射元件之雷射 諧振器。 根據該方法，於六方晶系III族氮化物半導體之a軸之方 向刻劃基板產物之第1面之後，藉由對基板產物之第2面之 按壓而進行基板產物之分離，形成另一基板產物及雷射 條。因此，以與由六方晶系III族氮化物半導體之m軸及法 線軸所規定之m-n面交又之方式，於雷射條形成第1及第2 端面形成。藉由該端面形成，可對第1及第2端面提供具有 能構成該III族氮化物半導體雷射元件之雷射諧振器之程度 的充分之平坦性、垂直性或者無離子損壞的諧振鏡面。 而且，該方法中，於小於45度及超過135度之角度 ALPHA内，藉由按壓而形成之端面包含爪面的可能性變 高。於超過80度且小於1〇〇度之角度，無法獲得所需之平 坦性及垂直性。雷射波導係於六方晶系ΙΠ族氮化物之c轴 之傾斜方向延伸’不使用乾式蝕刻面而形成能提供該雷射 波導之諧振鏡端面。 刻劃槽係關於深度方向及長度方向沿a_n面而形成。該 刻劃槽之排列導引雷射條之端面生成，由用於端面生成之 按壓而產生之彎曲力矩產生於包含活性層之半導體積層之 蟲晶面側的半導體上。該彎曲力矩係於由按壓而產生斷裂 之面的附近表現為極大。藉由按壓而於雷射條形成第1及 152214.doc -21· 201140974 第2端面。該較大之彎曲力矩可適於向露出於其等端面之 活性層端面提供良好的平坦性。藉由基板產物之分離，刻 劃槽作為刻劃痕而殘留於雷射條。 本發明之上述目的以及其他目的、特徵、以及優點可根 據參照隨附圖式描述之本發明之較佳實施㈣的以下詳細 描述而容易明瞭。 發明之效果 如以上說明所述，根據本發明，可提供一種於六方晶系 III族氮化物之C軸向m軸之方向傾斜的支持基體之半極性 面上具有表現出用於諧振鏡之高品質且可實現低閾值電流 的雷射諧振器之ΠΙ族氮化物半導體雷射元件，而且，根據 本發明，可提供製作該III族氮化物半導體雷射元件之方 法。 【實施方式】 本發明之觀點可參照作為例示而表示的隨附圖式且考慮 到以下詳細描述而容易地理解。繼而，參照隨附圖式，對 本發明之III族氮化物半導體雷射元件、及製作ΠΙ族氮化物 半導體雷射元件之方法的實施形態進行說明。可能的情況 下’對相同之部分標註相同之符號。 圖1係概略性地表示本實施形態之ΙΠ族氮化物半導體雷 射元件的構造之圖式^ ΠΙ族氮化物半導體雷射元件u雖具 有增益導引型之構造’但本發明之實施形態並不限於增益 導引型之構造^ III族氮化物半導體雷射元件η具有雷射構 造體13及電極15»雷射構造體13包含支持基體17及半導體 152214.doc •22· 201140974 區域19。支持基體17包含六方晶系III族氮化物半導體，且 具有半極性主面17a及背面17b。半導體區域19設於支持基 體17之半極性主面17a上。電極15設於雷射構造體13之半 導體區域19上。半導體區域19包含第1包覆層21、第2包覆 層23、及活性層25。第1包覆層21包含第1導電型氮化鎵系 半導體，例如包含η型AlGaN、η型InAlGaN等。第2包覆層 23包含第2導電型氮化鎵系半導體，例如包含p型AiGaN、 p型InAlGaN等。活性層25設於第1包覆層21與第2包覆層23 之間。活性層25包含氮化鎵系半導體層，該氮化鎵系半導 體層例如為井層25a。活性層25包含含有氮化鎵系半導體 之障壁層25b，井層25a及障壁層25b係交替排列。井層25a 包含例如InGaN等，障壁層25b包含例如GaN、InGaN等。 活性層25可包含以發出波長360 nm以上600 nm以下之光的 方式而設置之量子井構造。藉由半極性面之利用，有利於 產生波長430 nm以上550 nm以下之光。第1包覆層21、第2 包覆層23及活性層25係沿半極性主面17a之法線軸NX而排 列。III族氮化物半導體雷射元件11中，雷射構造體丨3包含 與由六方晶系III族氮化物半導體之m軸及法線轴NX所規定 的m-n面交又之第1割斷面27及第2割斷面29。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a group III nitride semiconductor laser device and a method of fabricating a group nitride semiconductor laser device. [Prior Art] Patent Document 1 describes a laser device. If the direction from {〇〇〇1} is equivalent to the direction in the [1-100] direction is 28. When the 1 degree inclined surface is the main surface of the substrate, the secondary cleavage surface becomes a {11-20} plane perpendicular to the main surface and the optical resonator surface, and the laser device has a rectangular parallelepiped shape. Patent Document 2 describes a nitride semiconductor device. The back surface of the substrate for cleavage is polished to thin the total layer thickness to become 1 〇〇 μηη & right. A dielectric multilayer film is deposited on the cleavage surface. Patent Document 3 describes a nitride-based compound semiconductor device. In the substrate used for the nitride-based compound semiconductor device, the nitride-based compound semiconductor having a through-difference density of 3 x 16 cm-2 or less has a substantially uniform interplanar density in the plane. Patent Document 4 describes a nitride-based semiconductor laser element. In the nitride-based semiconductor laser device, a cleavage plane is formed as follows. On the one hand, the concave portion formed by the etching process from the semiconductor laser device layer and the n-type GaN substrate avoids the convex portion formed by the etching operation time of the resonator surface of the n-type GaN substrate. Using a laser scriber, scribed grooves are formed in a dotted line shape (about 40 μm intervals) in a direction orthogonal to the extending direction of the ridges. Λίι ΡΙ and the wafer is cleaved at the location of the scribed groove. In addition, at this time, the area where the scribed groove is not formed, and the adjacent scribed groove is used as the starting point 152214. Doc 201140974 was opened. As a result, the s piece separation faces were respectively formed as cleavage faces including the (four) (four) substrate (0001) plane. Patent Document 5 describes a light-emitting element. According to the light-emitting element, it is easy to realize long-wavelength light emission without impairing the light-emitting efficiency of the light-emitting layer. Patent Document 6 describes a nitride semiconductor device having a counter electrode structure with reduced contact resistance. The nitride semiconductor substrate has a first main surface and a second main surface. The vaporized semiconductor substrate includes a region in which the crystal growth surface contains a (〇〇〇1) plane. The nitride semiconductor layer is laminated on the first main surface of the nitride semiconductor substrate. A recess groove is formed in the second region of the second main surface. The upper portion of the first major surface of the nitride semiconductor substrate has a ridge-shaped strip. The vibrators are made by opening. Non-Patent Document 1 discloses that a mirror-based semiconductor laser is formed by a reactive ion etching method on a semipolar (ίο-ll) surface in which a waveguide is provided in an oblique direction. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Laid-Open Publication No. 2001-230497. Patent Document 2: Japanese Patent Laid-Open Publication No. Hei No. Hei. Patent Publication No. 2〇〇9·〇81336, Patent Document 5: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2-235804. Patent Document: Japanese Patent Laid-Open No. Hei 2 No. 5-159278 Document 1: Jpn.  J.  Appl_ Phys.  Vol.  1〇 (2007) L444 152214. Doc 201140974 SUMMARY OF THE INVENTION Problems to be Solved by the Invention According to the energy band structure of a gallium nitride-based semiconductor, there are several transitions that can achieve laser oscillation. According to the inventor's point of view, it is considered that in the ΙΠ-type nitride semiconductor laser element using the supporting substrate of the semi-polar surface inclined in the direction of the axial claw axis, when the laser waveguide is made along the c-axis and the m-axis When the specified surface is extended, the threshold current can be reduced. In the direction of the laser waveguide, the mode in which the transition energy (difference between the conduction band energy and the valence band energy) is minimized can achieve laser excitation. When oscillating, the threshold current can be lowered. However, in the direction of the laser waveguide, due to the resonator mirror, the previous cleavage plane such as the C plane, the a plane, or the m plane cannot be used. Therefore, in order to fabricate the resonator mirror, the reaction is used. A dry etching surface of a semiconductor layer is formed by reactive ion etching (RIE). As a resonant mirror formed by the RIE method, it is desirable to have perpendicularity to a laser waveguide, flatness of a dry etched surface, or ion damage. Improvements have been made, etc. Moreover, the derivation of process conditions for obtaining a good dry etched surface under the current state of the art has become a large burden. According to the inventors, currently In the group III nitride semiconductor laser device formed on the semipolar surface, the laser waveguide extending in the oblique direction (inclination direction) of the c-axis and the end surface of the resonator mirror formed without using dry etching On the other hand, when a III-nitride semiconductor laser device is fabricated on the c-plane, when the resonant mirror is formed by using the previous cleavage plane, a scribed groove is formed on the film on the epitaxial surface side. And by the blade to the back of the substrate to make 152214. Doc 201140974 and 'as described above', in the direction of the laser waveguide extending in the oblique direction (inclined direction) of the C-axis, the resonator mirror cannot be fabricated using the previous cleavage plane. According to the inventors' point of view, in the group m nitride semiconductor laser device of the substrate having the semipolar plane inclined in the direction of m-direction m, an end face different from the cleavage plane can be used as the spectral galvanometer. This end face is produced by forming a scribed groove on the epitaxial surface side of the film and pressing against the back side of the substrate.纟a Yue et al. discuss the improvement of the end face using the t-hai method to better quality for resonant mirrors. The present invention has been made in view of the above circumstances. The applicant of the present application has a patent application for a group III nitride semiconductor laser element including a cut section for an optical resonator (Japanese Patent Application No. 2009-144442). It is an object of the present invention to provide a bismuth nitride semiconductor laser device which exhibits a semipolar surface of a support substrate which is inclined from the c-axis of the hexagonal bismuth nitride in the direction of the m-axis. A laser resonator of high quality and low threshold current can be realized for a resonant mirror, and another object is to provide a method for fabricating a group III nitride semiconductor laser device. Means for Solving the Problems A group III nitride semiconductor laser device according to an aspect of the present invention has: (a) a laser structure comprising a hexagonal crystal group m-nitride semiconductor and having a semipolar primary surface support a substrate and a semiconductor region provided on the semipolar primary surface of the support substrate; and (b) an electrode provided on the semiconductor region of the laser structure. The semiconductor region includes a first cladding layer containing a first conductivity type gallium carbide semiconductor, a second cladding layer containing a second conductivity type gallium nitride semiconductor, and the second cladding layer and the upper 152214 . Doc 201140974 The active layer between the second cladding layers, wherein the first cladding layer, the second cladding layer and the active layer are arranged along a normal axis of the semipolar primary surface, and the active layer comprises nitriding In the gallium-based semiconductor layer, the c-axis system of the hexagonal III-nitride semiconductor of the support substrate is inclined at a finite angle ALPHA toward the m-axis of the hexagonal bismuth nitride semiconductor with respect to the normal axis The angle ALPHA formed by the normal axis and the c-axis of the hexagonal indium-based semiconductor semiconductor is in a range of 45 degrees or more and 80 degrees or less or 100 degrees or more and 135 degrees or less, and the laser structure includes and The m-axis of the hexagonal III-nitride semiconductor and the first and second sections of the mn plane defined by the normal axis, the laser resonator of the in-zinc semiconductor laser device includes the first And the second cut surface, the laser structure includes first and second surfaces, and the first surface is a surface opposite to the second surface. The semiconductor region is located between the second surface and the support substrate. 1st and 2nd cuts The support base of the laser structure is extended from the edge of the second surface to the edge of the second surface. The support base of the laser structure has a concave portion provided at one of the edges of the first surface in the first fractured surface. The recess extends from the back surface of the support base, and an end of the recess is spaced apart from an edge of the second surface of the semiconductor region. According to the group III nitride semiconductor laser device, the first and second fractured faces of the laser resonator intersect with the mn plane defined by the m-axis and the normal axis of the hexagonal bismuth-based semiconductor semiconductor, and thus A laser waveguide extending in a direction extending from the intersection of the m_n plane and the semipolar plane is provided. Therefore, a bismuth nitride semiconductor laser element having a laser resonator capable of realizing a low threshold current can be provided. 152214. Doc 201140974 Moreover, at an angle of less than 45 degrees and more than 135 degrees, the possibility that the end face formed by pressing includes a claw face becomes high. At an angle of more than 80 degrees and less than 100 degrees, it is impossible to obtain the desired flatness and verticality. Further, the concave portion corresponding to the scratch is extended from the back surface of the support base, and the end of the concave portion is spaced apart from the edge of the second surface (elliptical surface) of the semiconductor region. Therefore, the end face of the active layer exposed on the cut surface has good flatness. Further, the concave portion guides the cutting, and a large bending moment is generated in the semiconductor on the epitaxial surface side of the semiconductor laminate including the active layer, and the torque distribution is considered to be good in the quality of the cut surface. In the group III nitride semiconductor laser device of the present invention, it is preferable that the support substrate has a thickness of 400 μm or less. The ΠΙ-nitride semiconductor laser element is adapted to obtain an excellent cut surface for a laser resonator. In the group III nitride semiconductor laser device of the present invention, it is more preferred that the support substrate has a thickness of 50 μm or more and 100 μη or less. If the thickness is 5 〇 or more, the operation becomes easy and the production yield is improved. If it is 1 〇〇 μιηα, it is further suitable to obtain an excellent cut section for a laser resonator. In the group III nitride semiconductor laser device of the present invention, the concave portion of the laser structure may be in the semiconductor region. In the group III nitride semiconductor laser device of the present invention, it is more preferable that an angle formed by the normal axis and the c-axis of the hexagonal III-nitride semiconductor is 63 degrees or more and 80 degrees or more or more than 100 degrees. The range below the degree. In the group III nitride semiconductor laser device, in the range of 63 degrees or more and 80 degrees or less or 100 degrees or more and 117 degrees or less, the end face formed by pressing becomes highly likely to be close to the surface perpendicular to the main surface of the substrate. . Moreover, at 152214. Doc 201140974 Over 80 degrees and less than 100 degrees, there is no need to achieve the desired flatness and verticality. In the group III nitride semiconductor laser device of the present invention, the laser light from the active layer is polarized in the direction of the a-axis of the hexagonal III-nitride semiconductor. In the group III nitride semiconductor laser device, the energy band transition capable of realizing a low threshold current is polarized. In the indium nitride semiconductor laser device of the present invention, the light in the LED mode of the m-type nitride semiconductor laser device includes a polarization component η in a direction in which the hexagonal bismuth nitride semiconductor is extracted, and The direction in which the c-axis of the hexagonal BB-based group III vaporized semiconductor is projected onto the principal surface includes the polarizing component 12, and the polarizing component Π is larger than the polarizing component 12. According to the group III nitride semiconductor laser device, it is possible to use a laser resonator and laser light to oscillate light in a mode in which the intensity of light is large in the LED mode. In the group III nitride semiconductor laser device of the present invention, it is preferable that the semipolar primary surface is {20-21} plane, {10-11} plane, {20-2-1} plane, and {10_1 -1 } Any of the faces. According to the group III nitride semiconductor laser device, the typical semi-polar planes can provide sufficient flatness and verticality to the extent that they can constitute a laser resonator of the group III nitride semiconductor laser device. First and second end faces 0 In the group III nitride semiconductor laser device of the present invention, the semi-polar principal surface is from the {20-21} plane, the {10-11} plane, and the {20-2-1} plane. And a surface having a slight inclination in which the half polarity of the 1} surface is in the range of -4 degrees or more and +4 degrees or less in the m-plane direction is preferably used as the above-mentioned main surface. 152214. Doc •10· 201140974 According to the III-nitride semiconductor laser element, a micro-inclined surface deviated from the typical semi-polar planes can provide a laser resonance capable of constituting the 7-member of the group-m nitride semiconductor laser The first and second end faces of the flatness and verticality of the degree of the device are sufficient. In the group III nitride semiconductor laser device of the present invention, it is preferable that the support substrate has a laminated defect density of 1 x 10 〇 4 cm-i or less. According to the group III nitride semiconductor laser device, since the buildup defect density is 1xio4 cm or less, the possibility of damage to the flatness and/or the perpendicularity of the cut surface due to an accidental event is low. In the group III nitride semiconductor laser device of the present invention, the support substrate may include any one of GaN, AlGaN, AIN, InGaN, and InAlGaN. According to the group III nitride semiconductor laser device, when the substrate including the gallium nitride-based semiconductor is used, the first and second end faces which can be used as the resonator can be obtained. When an A1N substrate or an AlGaN substrate is used, the degree of polarization can be increased, and the beam bonding can be enhanced by a low refractive index. When an InGaN substrate is used, the lattice mismatch ratio of the substrate and the light-emitting layer can be reduced, and the crystal quality can be improved. Further, in the group III nitride semiconductor laser device of the present invention, a dielectric multilayer film provided on at least one of the first and second fractured faces may be further provided. In the group III nitride semiconductor laser device, the end surface coating can also be applied to the fracture surface, and the reflectance can be adjusted by coating the end surface. In the group III nitride semiconductor laser device of the present invention, the active layer may include 152214 in such a manner as to emit light having a wavelength of 360 nm or more and 600 nm or less. Doc 201140974 Quantum Well Construction. The Group III nitride semiconductor laser device can utilize a Group III nitride semiconductor laser element that effectively utilizes polarization of the LED mode by utilizing a semipolar plane, thereby obtaining a low threshold current. In the group III nitride semiconductor laser device of the present invention, it is more preferable that the active layer includes a quantum well structure provided to generate light having a wavelength of 430 nm or more and 550 nm or less. The III-nitride semiconductor laser device can reduce the piezoelectric electric field by using the semi-polar surface and improve the crystal quality of the light-emitting layer region, thereby improving quantum efficiency, and preferably emitting a wavelength of 430 nm or more and 5 5 0 Light below nm. In the group III nitride semiconductor laser device of the present invention, the end faces of the support substrate and the end faces of the semiconductor regions, respectively, of the end faces of the support regions and the end faces of the active regions of the semiconductor regions are orthogonal to The angle formed by the reference plane of the claw axis of the support matrix including the hexagonal nitride semiconductor is formed on the first plane defined by the c-axis and the m-axis of the group III nitride semiconductor (ALPHA-5) An angle above the range of (ALPHA+5) degrees. The group III nitride semiconductor laser element has an end face that satisfies the above-described perpendicularity with respect to an angle obtained from one of the c-axis and the m-axis to the other. In the group III nitride semiconductor laser device of the present invention, preferably, the angle is in a range of -5 degrees or more and +5 degrees or less on a second plane orthogonal to the first plane and the normal axis. . The group III nitride semiconductor laser device has an end face whose angle defined by a plane perpendicular to the normal axis of the semipolar plane satisfies the above-described perpendicularity. In the group III nitride semiconductor laser device of the present invention, the above electrode is used in 152214. Doc 12 201140974 The extension of the established axis, the above-mentioned third and second sections are intersected with the above-mentioned established axis. In the group III nitride semiconductor laser device of the present invention, the laser structure "T" has one side surface for a group III nitride semiconductor laser element, and the recess portion may be located at the one end of the pair of side surfaces . According to the Group III nitride semiconductor laser element, the recess is scored, and the recess is located at the end of the opposite side, so that the laser strip of the laser structure is spaced apart from the score line. In the group III nitride semiconductor laser device of the present invention, the laser structure may have one side surface for the group III nitride semiconductor laser element, and the concave portion is located at the one end of the pair of side surfaces, and the laser The support base of the structure has another recess spaced apart from the recess, the other recess extending from the back surface of the support base, and the other recess is provided on the first and second cut surfaces One of the edges of the i-th surface, the end of the other recess being spaced apart from the second surface of the semiconductor region. According to the group III nitride semiconductor laser device, when the other concave portion and the concave portion are provided in the first and second fractured faces, respectively, the first and second fractured faces of the laser beam used in the laser structure can be used. A scribed groove is provided in the vicinity. Therefore, the cut sections can provide the laser strip with a higher quality end face 0 for the resonant mirror. According to the III-nitride semiconductor laser element, when the other recess and the recess are provided in the first cut section _, The section of the laser strip of the laser structure is defined by two scribed grooves. Therefore, the section can be used to provide laser strips with I522I4. Doc •13· 201140974 The higher quality end face of the resonator mirror. Another aspect of the invention is a method of fabricating a III-nitride semiconductor laser device. The method includes the steps of: (a) preparing a substrate having a hexagonal lanthanide nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure a semiconductor region formed on the semipolar primary surface and the substrate; (C) partially scribed the first surface of the substrate product in a direction of the a-axis of the hexagonal lanthanide nitride semiconductor; Separation of the substrate product is performed by pressing the second surface of the substrate product to form another substrate product and a laser strip. a surface of the first surface opposite to the second surface, wherein the semiconductor region is located between the second surface and the substrate, and the laser strip has a surface extending from the first surface to the second surface a first and a second end surface formed by the separation, wherein the first and second end faces constitute a laser resonator of the in-line nitride semiconductor laser device, and the anode electrode and the cathode electrode are formed on the laser structure, The semiconductor region includes a first cladding layer including a first conductivity type gallium nitride based semiconductor, a second cladding layer including a second conductivity type gallium nitride based semiconductor, and the first cladding layer and the second cladding layer The active layer between the cladding layers, the first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis of the semipolar primary surface, and the active layer includes a gallium nitride based semiconductor layer. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at a finite angle ALPHA toward the m-axis of the hexagonal III-nitride semiconductor with respect to the normal axis, and the first and second end faces With the above six m-axis III nitride crystal semiconductors, and under the normal axis of the m-n personally 152,214. Doc • 14- 201140974 Again. According to this method, after the first surface of the substrate product is scribed in the direction of the a-axis of the hexagonal group 111 nitride semiconductor, the substrate product is separated by pressing the second surface of the substrate product to form another substrate. Products and laser strips. Therefore, the first and second end faces are formed on the laser strip so that the m-axis of the hexagonal III-nitride semiconductor intersects the m-n plane defined by the normal axis. By forming the end face, the first and second end faces can be provided with a resonance mirror having sufficient flatness, perpendicularity, or no ion damage to the extent that the laser resonator of the group III nitride semiconductor laser device can be formed. Further, in this method, in the ALPHA at an angle of less than 45 degrees and more than 13 degrees, the possibility that the end surface formed by pressing includes the m-plane becomes high. Moreover, 'at the angle of more than 80 degrees and less than 100 degrees, the desired flatness and perpendicularity cannot be obtained. "The laser waveguide is extended in the oblique direction of the c-axis of the hexagonal III-nitride" without using a dry etched surface. A resonant mirror end face is provided that provides the laser waveguide. The scribed groove guides the end face of the laser bar to generate 'the bending moment generated by the pressing for the end face generation from the semiconductor on the epitaxial side of the semiconductor laminate including the active layer. This bending moment is extremely large in the vicinity of the surface which is broken by pressing. The first and second end faces are formed on the laser strip by pressing. The large bending moment provides good flatness to the end faces of the active layer exposed on the end faces. Therefore, it is preferred that the etched grooves remain as scratch marks on the laser bar by separation of the substrate products. In the method of the present invention, in the above step of forming the substrate product, the substrate is subjected to slicing or grinding to make the thickness of the substrate 152214. Doc 15 201140974 is 400 μηη or less, and the first surface may be a processing surface formed by the above processing. Alternatively, it may be a surface including the electrode formed on the processing surface. In the method of the present invention, in the step of forming the substrate product, the substrate is subjected to polishing 'the thickness of the substrate is 5 〇pm or more and 1 〇〇μηη or less, and the first surface may be polished by the polishing. The abrasive surface formed. Alternatively, it may be a surface including an electrode formed on the above-mentioned polishing surface. On the substrate having such a thickness, the first and second portions having sufficient flatness, perpendicularity, or ion-free damage to the extent that the laser resonator of the bismuth nitride semiconductor laser device can be formed can be formed with good yield. End face. In the method of the present invention, it is preferable that the angle ALPHA is in a range of not less than 80 degrees and not more than 80 degrees and not more than 1 degree and not more than 17 degrees. A portion of the end face formed by pressing at an angle of less than 63 degrees and more than 117 degrees may have 111 faces. Moreover, at an angle of more than 80 degrees and less than 1 degree, the desired flatness and verticality cannot be obtained. In the method of the present invention, it is preferred that the above semi-polar principal surface system 丨2〇_2 J } plane, {10-11} plane, {20-2-1} plane, and {10-1-1} plane Any of the faces. On the typical semi-polar plane, the first and second end faces having sufficient flatness, verticality, or ion-free damage to the extent that the laser resonator of the bismuth nitride semiconductor laser device can be formed can be provided. . In the method of the present invention, 'as the semi-polar main surface, from the {2〇_2ΐ丨, {10-11}, {20-2-1}, and {ΐ〇_ι·ΐ} faces Any of the semi-polar faces having a micro-tilt surface having a range of _4 degrees or more and +4 degrees or less in the m-plane direction may preferably be used as the above-mentioned main surface. A sloping surface from which the typical semi-polar surface deviates may also be provided with 152214. Doc -16- 201140974 There are sufficient flatness, perpendicularity or no-ion damage to the second and second end faces of the laser resonator which can constitute the III-nitride semiconductor laser element. In the method of the present invention, the scribing is performed by using a laser scriber, and the scribed groove is formed by the scribing, and the length of the scribed groove is shorter than that of the above-mentioned hexagonal m-type nitride semiconductor The length of the a-axis and the intersection of the an surface defined by the normal axis and the first surface. According to this method, another substrate product and a laser strip are formed by cutting the substrate product. The cut is produced using a scribed groove that is shorter than the cut line of the laser strip. In the method of the present invention, the end faces of the active layers of the second and second end faces are formed by the hexagonal crystal system with respect to a reference plane orthogonal to the m-axis of the support matrix including the hexagonal nitride semiconductor. The plane defined by the c-axis and the m-axis of the m-nitride semiconductor can be an angle in the range of (ALPHA_5) or more (ALPHA+5) degrees or less. According to this method, it is possible to form an end face having the above-described perpendicularity with respect to an angle obtained from one of the c-axis and the m-axis to the other. In the method of the present invention, the substrate may include any one of GaN, AIN, AlGaN, InGaN, and InAK}aN. According to this method, when the substrate including the gallium nitride-based semiconductor is used, the first and second end faces which can be used as the vibrators can be obtained. In the method of the present invention, in the step of scribing the substrate product, a scribed groove may be formed at a pitch equal to the width of the element of the group III nitride semiconductor laser device. The method may further comprise the step of performing 152214. Doc 201140974 A bismuth nitride semiconductor laser device is fabricated by separating the laser strips. The above-described laser structure of the above-described group III nitride semiconductor laser device has one side surface for the group III nitride semiconductor laser device. According to this method, a laser beam can be formed by using a scribed groove formed at an equal distance from the width of the element. The scribed groove is arranged to be aligned with the width of the element to guide the direction of travel of the cut. The scribed grooves allow the quality of the end faces of the laser stripes located between the scribed grooves to be good. In the method of the present invention, in the step of scribing the substrate product, a scribed groove may be formed at a pitch equal to a multiple of the element width of the group III nitride semiconductor laser device. The method further includes the step of performing separation of the above-described laser strips to fabricate a bismuth nitride semiconductor laser device. The above-described laser structure of the above-described group III nitride semiconductor laser device has one side surface for the group III nitride semiconductor laser element. According to this method, a laser beam can be produced by using a scribed groove formed by a pitch equal to a multiple of the width of the element. A bismuth nitride semiconductor laser device according to an aspect of the present invention includes: (4) a laser structure comprising a support substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface and a back surface, and the above support a semiconductor region provided on the semi-polar main surface of the substrate; and (b) an electrode provided on the semiconductor region of the laser structure. The semiconductor region includes a first conductive type cladding layer, a second conductive type cladding layer, and an active layer provided between the first cladding layer and the second cladding layer, and the second conductive type cladding layer The second conductive type cladding layer and the active layer are arranged along a normal axis of the semipolar primary surface, and the hexagonal crystal system 152214 of the support substrate. Doc • 18· 201140974 The c-axis of the in-nitride semiconductor is inclined at an angle α toward the direction of the melon axis of the hexagonal BB-based group III nitride semiconductor with respect to the normal axis, and the angle ALPHA is at 45 degrees or more and 80 degrees. In the range of 1 degree or more and 135 degrees or less, the laser structure includes first and second surfaces, the first surface is a surface opposite to the second surface, and the semiconductor region is located on the second surface The support base of the above-mentioned support structure between the support bases has end portions and second scratches provided at one end and the other end of the edge of the first surface at the end portion of the laser structure The first and second scratches extend along a plane defined by the normal axis and the a-axis of the hexagonal m-type nitride semiconductor, and the first and second scratches are from the support substrate. The end portion of the laser structure has a cut surface connecting the edge of the first and second score marks and the edge of the second surface of the laser structure to the end portion. Nitride semiconductor The laser resonator element including the fractured face. According to the group III nitride semiconductor laser device, since it intersects with the m_n plane defined by the m-axis and the normal axis of the hexagonal in-type nitride semiconductor, a cross line extending from the mn plane and the semipolar plane can be provided. Laser waveguide in the direction. Therefore, a group III nitride semiconductor laser element having a laser resonator capable of realizing a low threshold current can be provided. Further, the end face formed by pressing at an angle of less than 45 degrees and more than 135 degrees has a possibility of including a melon surface. At the angle of more than 80 degrees and less than 1 〇 ,, the flatness and the perpendicularity are not obtained. The first and second scratches are provided at the end of the laser structure. The first and second scribes are defined by the a-axis and the normal axis of the hexagonal III-nitride semiconductor. Doc •19· 201140974 The a-n plane is arranged. The arrangement of the first and second scratches can be used to guide the formation of the cut surface of the laser resonator. Therefore, the cut surface is arranged to connect the edge of the scratch to the edge of the second surface of the laser structure. The end surface of the active layer exposed on the cut surface has good flatness. The scratches extend from the back surface of the support substrate, and a large bending moment is generated on the semiconductor on the epitaxial surface side of the semiconductor laminate including the active layer, and the torque distribution makes the quality of the cut surface good. Another aspect of the invention is a method of fabricating a III-nitride semiconductor laser device. The method includes the steps of: (a) forming a substrate product having a laser structure, an anode electrode, and a cathode electrode from a hexagonal lanthanide nitride semiconductor; the laser structure comprising a substrate and a semipolar formed on the substrate a semiconductor region on the main surface 'the anode electrode and the cathode electrode are formed on the laser structure; (b) the first surface of the substrate product is scribed to form an arrangement of a plurality of scribed grooves; and (c) The substrate product is separated by pressing the second surface of the substrate product to form another substrate product and a laser strip. The c-axis of the hexagonal m-type nitride semiconductor of the substrate is inclined at a finite angle aLPha toward the m-axis of the hexagonal m-type nitride semiconductor with respect to the normal axis, and the angle ALPHA is a range of 45 degrees or more and 80 degrees or less or 1 degree or more and 135 degrees or less, wherein the semiconductor region includes an ith conductivity type cladding layer, a second conductivity type cladding layer, and the first cladding layer and the first layer 2, the active layer between the cladding layers, the first conductive type cladding layer, the second conductive type cladding layer, and the active layer are arranged along the normal axis of the semipolar primary surface; On the opposite side of the 2 faces, the above semiconductor region is located at the above 2152214. Doc 20· 201140974 between the surface and the substrate, each of the scribed grooves extends along a plane defined by an a-axis of the hexagonal III-nitride semiconductor and the normal axis, and the laser strip has the separation On the first and second end faces formed, the first and second end faces constitute a laser resonator of the bismuth nitride semiconductor laser device. According to this method, after the first surface of the substrate product is scribed in the direction of the a-axis of the hexagonal III-nitride semiconductor, the substrate product is separated by pressing the second surface of the substrate product to form another substrate. Products and laser strips. Therefore, the first and second end faces of the laser bar are formed so as to intersect with the m-n plane defined by the m-axis and the normal axis of the hexagonal III-nitride semiconductor. By the formation of the end faces, the first and second end faces can be provided with a resonance mirror having sufficient flatness, perpendicularity, or no ion damage to the extent that the laser resonator of the group III nitride semiconductor laser device can be formed. Further, in this method, in the angle ALPHA of less than 45 degrees and more than 135 degrees, the possibility that the end surface formed by pressing includes the claw faces becomes high. At the angle of more than 80 degrees and less than 1 degree, the desired flatness and verticality cannot be obtained. The laser waveguide is extended in the oblique direction of the c-axis of the hexagonal lanthanide nitride. The end face of the resonator mirror capable of providing the laser waveguide is formed without using a dry etched surface. The scribed groove is formed along the a_n plane with respect to the depth direction and the longitudinal direction. The arrangement of the scribed grooves guides the end faces of the laser strips, and the bending moment generated by the pressing for the end face generation is generated on the semiconductor side of the crystal face side of the semiconductor laminate including the active layer. This bending moment is extremely large in the vicinity of the surface which is broken by pressing. The first and 152214 are formed on the laser strip by pressing. Doc -21· 201140974 The second end face. The larger bending moment can be adapted to provide good flatness to the end faces of the active layer exposed at the end faces thereof. By the separation of the substrate product, the scribed grooves remain as scratch marks and remain in the laser strip. The above and other objects, features, and advantages of the present invention will be apparent from the description of the appended claims. EFFECT OF THE INVENTION As described above, according to the present invention, it is possible to provide a support substrate having a tilting direction in the direction of the C-axis of the hexagonal III-nitride nitride, and having a height for the resonator mirror A bismuth nitride semiconductor laser element of a laser resonator of a quality and capable of achieving a low threshold current, and in accordance with the present invention, a method of fabricating the group III nitride semiconductor laser element can be provided. [Embodiment] The present invention can be easily understood by referring to the accompanying drawings and the following detailed description. Next, an embodiment of a group III nitride semiconductor laser device of the present invention and a method of fabricating a bismuth nitride semiconductor laser device will be described with reference to the accompanying drawings. Where possible, the same symbol is marked with the same part. Fig. 1 is a view schematically showing the structure of a bismuth nitride semiconductor laser device of the present embodiment. The bismuth nitride semiconductor laser device u has a gain-guide type structure, but the embodiment of the present invention is The structure is not limited to the gain-guide type. The group III nitride semiconductor laser element η has a laser structure 13 and an electrode 15»the laser structure 13 includes a support substrate 17 and a semiconductor 152214. Doc •22· 201140974 Area 19. The support substrate 17 includes a hexagonal Group III nitride semiconductor and has a semipolar primary surface 17a and a back surface 17b. The semiconductor region 19 is provided on the semipolar primary surface 17a of the support substrate 17. The electrode 15 is provided on the semiconductor region 19 of the laser structure 13. The semiconductor region 19 includes a first cladding layer 21, a second cladding layer 23, and an active layer 25. The first cladding layer 21 includes a first conductivity type gallium nitride-based semiconductor, and includes, for example, n-type AlGaN or n-type InAlGaN. The second cladding layer 23 includes a second conductivity type gallium nitride-based semiconductor, and includes, for example, p-type AiGaN or p-type InAlGaN. The active layer 25 is provided between the first cladding layer 21 and the second cladding layer 23. The active layer 25 includes a gallium nitride based semiconductor layer, for example, the well layer 25a. The active layer 25 includes a barrier layer 25b containing a gallium nitride-based semiconductor, and the well layer 25a and the barrier layer 25b are alternately arranged. The well layer 25a includes, for example, InGaN or the like, and the barrier layer 25b includes, for example, GaN, InGaN, or the like. The active layer 25 may include a quantum well structure provided to emit light having a wavelength of 360 nm or more and 600 nm or less. The use of a semi-polar surface facilitates the generation of light having a wavelength of 430 nm or more and 550 nm or less. The first cladding layer 21, the second cladding layer 23, and the active layer 25 are arranged along the normal axis NX of the semipolar primary surface 17a. In the group III nitride semiconductor laser device 11, the laser structure body 3 includes a first cut surface 27 which is overlapped with a mn plane defined by an m-axis and a normal axis NX of a hexagonal III-nitride semiconductor and Second cut section 29.

參照圖1可知，描繪有正交座標系S及結晶座標系CR法 線軸NX係朝向正交座標系S之Z軸的方向。半極性主面17a 係平行於由正交座標系S之X轴及Y軸所規定之既定之平面 而延伸。而且，圖1中描繪有代表性之c面Sc。支持基體17 之六方晶系III族氮化物半導體之c軸係，相對於法線軸NX 152214.doc -23- 201140974 而向六方晶系III族氮化物半導體之m軸的方向以有限的角 度ALPHA傾斜。 III族氮化物半導體雷射元件11進而具有絕緣膜3丨。絕緣 膜31覆蓋於雷射構造體13之半導體區域19之表面19a，半 導體區域19位於絕緣膜31與支持基體17之間《支持基體17 包含六方晶系III族氮化物半導體》絕緣膜3 1具有開口 31a，開口 31a係於半導體區域19之表面19a與上述m-n面的 交叉線LIX之方向延伸，形成為例如條紋形狀。電極丨5經 由開口31a而與半導體區域19之表面19a(例如第2導電型接 觸層33)形成接觸，且於上述交叉線LIX之方向延伸。01族 氮化物半導體雷射元件11中，雷射波導包含第1包覆層 21、第2包覆層23及活性層25，且於上述交叉線LIX之方向 延伸。 ΠΙ族氮化物半導體雷射元件11中，第1割斷面27及第2割 斷面29係與由六方晶系in族氮化物半導體之m軸及法線轴 NX所規定的m-n面交叉》ΠΙ族氮化物半導體雷射元件丨丨之 雷射諧振器包含第1及第2割斷面27、29，雷射波導自第1 割斷面27及第2割斷面29中之一者向另一者延伸。雷射構 造體13包含第1面13a及第2面13b，第1面13a係第2面13b之 相反側之面。半導體區域1〇設於第2面13b與支持基體17之 間。第1及第2割斷面27、29自第1面13a之邊緣13c延伸至 第2面13b之邊緣13d。第1及第2割斷面27、29與c面、m面 或者a面等目前為止之解理面不同。 根據該III族氮化物半導體雷射元件11，構成雷射諧振器 152214.doc •24· 201140974 之第1及第2割斷面27、29與_面交叉。因此，可…置延 伸於m-n面與半極性面17a之交又線的方向之雷射波導。因 此，III族氮化物半導體雷射元件u變得 I侍具有可實現低閾值 電流之雷射諧振器。 雷射構造體η之支持基體17具有設於一個割斯面（例如 第】割斷面27)上之凹吾卜圖！中纟示出具有例示之形狀之 凹部30。凹部30自支持基體17之背面丨％延伸。凹部川設 於第ana之邊緣13c之一部分。而且，凹部3〇之末端術 係與第2面13b之邊緣13d相隔。凹部3〇係與割斷前之刻劃 槽相對應，故為刻劃痕。 如此於支持基體之背面設有刻劃痕，故而刻劃槽設於基 板背面。藉由刮刀對基板背面之相反側之薄膜側的按壓可 能引起斷裂。如此設置之用於光諧振器的端面具有良好地 割斷面的平坦性、垂直性。如此之諧振鏡對於半極性面上 之半導體雷射可提供較高的振盪良率。 凹邛3 0係與刻劃槽相關聯，故而，向雷射構造體13提供 用於諧振器之割斷面，因此，刻劃槽有利於導引割斷行進 之方向。而且，刻劃槽形成於基板（支持基體17)之背面， 而且雷射構造體13之第2面13b受到按壓。割斷係以刻劃槽 為起點而於自第1面13a朝向第2面13b的方向行進，而且亦 於與其交又之方向行進。而且，由用於割斷之按壓力而產 生之彎曲力矩於第2面（磊晶面）13b之表層發生變化，且認 為’當施加用於割斷之按壓力時，該彎曲力矩之值於由刻 劃槽之排列方向所規定的平面或者直線上成為最大。另外 152214.doc • 25· 201140974 認為，較大的彎曲力矩係形成良好之諸振鏡的一個有利因 素。 進而，凹部30係沿由六方晶系III族氮化物半導體之&轴 及法線轴NX所規定的a-n面延伸。因此，可使露出於割斷 面27之活性層端面具有更優良之平坦性。凹部3〇自支持基 體17之背面17b延伸，而且該凹部30之末端3〇a與第2面（蟲 晶面）13 b之邊緣13 d相隔。 凹部30之側緣30b沿III族氮化物半導體雷射元件丨丨之側 面20a延伸。該側緣3 Ob係穿過絕緣膜3 1之開口 3 1 a及活性 層25之發光區域’且與法線軸NX之方向上所規定之基準 面相隔。 第2面13 b之邊緣13 d係自雷射構造體13之一對側面 (20a、20b)中之一者（例如側面2〇a)的一端延伸至另一者（例 如側面20b)的另一端。蟲晶面之邊緣上午刻劃痕。或者， 邊緣13c係自一對側面（20a、20b)中之一者（例如側面2〇a) 的一端延伸至側緣30b。凹部30自側面20b沿a-n面延伸。 凹部30位於側面20a之一端》 本實施例中，雷射構造體13之支持基體17可具有設於另 一割斷面（例如第2割斷面2 9)且與刻劃槽相對應之凹部3 2。 凹部32係沿例如III族氮化物半導體雷射元件u之側面2〇a 延伸。凹部32亦與凹部30同樣含有刻劃痕。凹部32亦可具 有與例如凹部30相同之形狀》凹部32亦與凹部3〇同樣沿 η面延伸。 刻劃槽有利於導引割斷行進之方向。當例如支持基體17 152214.doc •26· 201140974 之异度比刻劃槽之深度更薄之情形時，凹部3 〇、3 2有時及 於半導體區域19。 III族氮化物半導體雷射元件丨丨包含η側導光層35及ρ側導 光層37。η側導光層35包含第1部分35a及第2部分35b，η側 導光層35包含例如GaN、InGaN等。ρ側導光層37包含第1 为37a及第2部分37b，p側導光層37包含例如GaN、 InGaN寻。載體阻擋層39設於例如第1部分37a與第2部分 37b之間。支持基體17之背面17b設有另一電極41，電極41 覆蓋於例如支持基體17之背面17b。 圖2係表示III族氮化物半導體雷射元件之活性層的能帶 構造之圖式。圖3係表示ΙΠ族氮化物半導體雷射元件丨丨之 活性層25的發光之偏光的圖式。圖4係示意性地表示由〇軸 及m軸所規定的斷面之圖式。參照圖2之（a)部可知，於能 帶構造BAND之Γ點附近’傳導帶與價帶之間的可能的躍遷 為3個。A能帶及B能帶係比較小的能量差。傳導帶與a能 帶之躍遷Ea所產生之發光向a軸方向偏光，傳導帶與b能帶 之躍遷Eb所產生之發光向將c轴投影至主面的方向偏光。 關於雷射振盪，躍遷Ea之閾值小於躍遷Eb之間值。 參照圖2之（b)部可知，表現出πι族氮化物半導體雷射元 件11之LED模式下的光之光譜。LED模式下的光包括六方 晶系III族氮化物半導體之a軸之方向的偏光成分η、及將 六方晶糸ΠΙ族氮化物半導體之c轴投影至主面之方向的偏 光成分12’偏光成分II大於偏光成分12。偏光度ρ係由η_ 12)/(11+12)規定。使用該III族氮化物半導體雷射元件丨丨之 152214.doc -27- 201140974 雷射諧振器，可雷射振盪LED模式下之發光強度較大的模 式之光。 如圖3所示，可進而包括第1及第2割斷面27、29中之至 少另一者’或者其等上所設之介電質多層膜43a、43b。斷 裂面27、29上均可使用端面塗佈。藉由端面塗佈，可調整 反射率。 如圖3之（b)部所示，來自活性層25之雷射光[向六方晶 系III族氮化物半導體之a軸的方向偏光。該m族氮化物半 導體雷射元件11中，可實現低閾值電流之能帶躍遷具有偏 光性。用於雷射諧振器之第i及第2割斷面27、29與c面、m 面或者a面等目前為止之解理面不同。然而，第1及第2割 斷面27、29具有用於諧振器之、作為鏡面之平坦性、垂直 性。因此’使用第1及第2割斷面27、29與延伸於該等割斷 面27、29間的雷射波導’如圖3之（b)部所示，利用躍遷Ea 之發光，可實現低閾值之雷射振盪，該躍遷Ea之發光比向 將c軸投影至主面的方向偏光之躍遷Eb的發光更強。 III族氮化物半導體雷射元件11中，第1及第2割斷面27、 29各自呈現支持基體17之端面17c及半導體區域19之端面 19c ’端面17c及端面19c被介電質多層膜43 a覆蓋。支持基 體17之端面17c及活性層25之端面25c的法線向量NA與活 性層25之m軸向量MA所成的角度BETA係由成分（BETA) j 以及成分（BETA)〗規定’該成分（BETAh係規定於由III族 氮化物半導體之c軸及m軸所規定的第1平面S1上，該成分 (beta)2係規定於與第1平面S1(為了便於理解而未圖示， 152214.doc • 28- 201140974 但可參照為「S1」）及法線軸NX正交的第2平面S2(為了便 於理解而未圖示，但可參照為「S2」）上。較佳為，成分 (BETA)!係於由III族氮化物半導體之c軸及m軸所規定的第 1平面S 1上介於（ALPHA-5)度以上（ALPHA+5)度以下之範 圍。圖4中，該角度範圍係表示為代表性之m面~與參照 面Fa所成之角度。為了便於理解，圖4中，對於代表性之以 面sM自雷射構造體之内側跨及外側而進行描繪。參照面Fa 沿活性層25之端面25c延伸。該⑴族氮化物半導體雷射元 件11中具有關於自c轴及m軸中之一者向另一者而獲取之角 度BETA而滿足上述垂直性的端面。而且，較佳為，成分 (BETA)2於第2平面S2上介於_5度以上+5度以下之範圍。此 處’ betaL^etaV+cbeta)22。此時，ΠΙ族氮化物半 導體雷射元件11之端面27、29關於與半極性面17a之法線 軸NX垂直之面上所規定的角度而滿足上述垂直性。 再次參照圖1可知’ III族氮化物半導體雷射元件丨丨中， 較佳為，支持基體17之厚度DSUB為400 μηι以下。該III族 氮化物半導體雷射元件中，適於獲得用於雷射諧振器的優 良之割斷面。III族氮化物半導體雷射元件丨丨中，更佳為， 支持基體17之厚度DSUB為50 μιη以上1〇〇 μιη以下。該in族 氮化物半導體雷射元件11中，進一步適於獲得用於雷射諧 振器的優良之割斷面。而且，操作變得容易，且可提高生 產良率。 III族氮化物半導體雷射元件丨丨中，法線軸]^乂與六方晶 系III族氮化物半導體之c軸所成的角度alpha較佳為45度 152214.doc -29· 201140974 以上，而且較佳為80度以下。而且，角度alpha較佳為 100度以上，而且較佳為135度以下。於小於45度及超過 135度之角度’藉由按壓而形成之端面包含爪面的可能性變 高。而且’於超過80度且小於1〇〇度之角度，有無法獲得 所需平坦性及垂直性之虞。 III族氮化物半導體雷射元件1丨中，法線軸Νχ與六方晶 系III族氮化物半導體之c軸所成的角度ALPHA更佳為63度 以上’而且較佳為80度以下。而且，角度ALPHA較佳為 100度以上，而且較佳為117度以下。於小於63度及超過 117度之角度’藉由按壓而形成之端面的一部分可能會出 現m面。而且，於超過80度且小於1〇〇度之角度，有無法獲 得所需平坦性及垂直性之虞。 半極性主面17a可為{20-21}面、{10-11}面、 面、及{10-1-1}面中之任一者。進而，自該等面於_4度以 上+4度以下之範圍微傾斜之面亦較佳地作為上述主面。該 等典型之半極性面17a上，可提供具有能夠構成該m族氮 化物半導體雷射元件11之雷射諧振器之程度的充分之平坦 性及垂直性之第1及第2端面27、29。而且，於跨及該等典 型之面方位的角度之範圍内，可獲得表現出充分之平坦性 及垂直性之端面。 III族氮化物半導體雷射元件丨丨中，支持基體17之積層缺 陷密度可為lxlO4 cnT1以下。因積層缺陷密度為lxl〇4 em-i 以下’故因偶發事件損壞割斷面之平坦性及/或垂直性的 可能性較低。而且，支持基體17可包含GaN、ΑιΝ、 152214.doc -30- 201140974Referring to Fig. 1, it is understood that the orthogonal coordinate system S and the crystal coordinate system CR normal axis NX are oriented in the direction of the Z axis of the orthogonal coordinate system S. The semipolar primary surface 17a extends parallel to a predetermined plane defined by the X-axis and the Y-axis of the orthogonal coordinate system S. Moreover, a representative c-plane Sc is depicted in FIG. The c-axis system of the hexagonal III-nitride semiconductor supporting the substrate 17 is inclined at a finite angle ALPHA toward the m-axis of the hexagonal III-nitride semiconductor with respect to the normal axis NX 152214.doc -23-201140974. . The group III nitride semiconductor laser element 11 further has an insulating film 3A. The insulating film 31 covers the surface 19a of the semiconductor region 19 of the laser structure 13, and the semiconductor region 19 is located between the insulating film 31 and the support substrate 17. The support substrate 17 includes a hexagonal III-nitride semiconductor insulating film 31. In the opening 31a, the opening 31a is formed in a stripe shape, for example, in a direction in which the surface 19a of the semiconductor region 19 and the mn plane intersect the line LIX. The electrode 5 is brought into contact with the surface 19a of the semiconductor region 19 (e.g., the second conductive type contact layer 33) via the opening 31a, and extends in the direction of the intersecting line LIX. In the group 01 nitride semiconductor laser device 11, the laser waveguide includes the first cladding layer 21, the second cladding layer 23, and the active layer 25, and extends in the direction of the intersection line LIX. In the bismuth nitride semiconductor laser device 11, the first fractured surface 27 and the second fractured surface 29 are intersected with the mn plane defined by the m-axis and the normal axis NX of the hexagonal indium nitride semiconductor. The laser resonator of the nitride semiconductor laser device includes first and second fractured faces 27 and 29, and the laser waveguide extends from one of the first fractured section 27 and the second fractured section 29 to the other. The laser structure 13 includes a first surface 13a and a second surface 13b, and the first surface 13a is a surface on the opposite side of the second surface 13b. The semiconductor region 1 is disposed between the second surface 13b and the support substrate 17. The first and second fractured sections 27, 29 extend from the edge 13c of the first surface 13a to the edge 13d of the second surface 13b. The first and second fractured faces 27 and 29 are different from the conventional cleaved faces such as the c-plane, the m-plane, or the a-plane. According to the group III nitride semiconductor laser device 11, the first and second fractured faces 27, 29 constituting the laser resonator 152214.doc • 24· 201140974 intersect with the _ plane. Therefore, it is possible to extend the laser waveguide extending in the direction of the intersection of the m-n plane and the semipolar plane 17a. Therefore, the group III nitride semiconductor laser element u becomes a laser resonator which can realize a low threshold current. The support base 17 of the laser structure η has a concave pattern provided on a cut surface (for example, the first cut surface 27)! The middle portion shows a recess 30 having an exemplary shape. The recess 30 extends from the back side 支持% of the support base 17. The concave river is located in a part of the edge 13c of the ana. Further, the end portion of the recessed portion 3 is spaced apart from the edge 13d of the second surface 13b. The recess 3 is a scribed groove corresponding to the scribed groove before the cutting. Thus, the back surface of the supporting substrate is provided with scoring marks, so that the scribed grooves are provided on the back surface of the substrate. The pressing of the film side on the opposite side of the back side of the substrate by the doctor blade may cause breakage. The end face for the optical resonator thus disposed has flatness and verticality of a good cut section. Such a resonant mirror provides a higher rate of oscillation for semiconductor lasers on a semi-polar surface. The recess 30 is associated with the scribed groove, so that the laser structure 13 is provided with a cut section for the resonator, and therefore, the scribed groove is advantageous for guiding the direction of the cut travel. Further, the scribed groove is formed on the back surface of the substrate (support base 17), and the second surface 13b of the laser structure 13 is pressed. The cutting travels in the direction from the first surface 13a toward the second surface 13b with the scribed groove as a starting point, and also travels in the direction in which it intersects. Further, the bending moment generated by the pressing force for cutting is changed in the surface layer of the second surface (elevation plane) 13b, and it is considered that the value of the bending moment is when the pressing force for cutting is applied. The plane or straight line defined by the direction in which the grooves are arranged is maximized. In addition, 152214.doc • 25· 201140974 believes that a large bending moment is a favorable factor for the formation of good galvanometers. Further, the recess 30 extends along the a-n plane defined by the & axis of the hexagonal III-nitride semiconductor and the normal axis NX. Therefore, the end face of the active layer exposed on the cut surface 27 can be made to have more excellent flatness. The recess 3〇 extends from the back surface 17b of the support base 17, and the end 3〇a of the recess 30 is spaced apart from the edge 13d of the second surface (worm surface) 13b. The side edge 30b of the recess 30 extends along the side surface 20a of the group III nitride semiconductor laser element. The side edge 3 Ob passes through the opening 3 1 a of the insulating film 3 1 and the light-emitting region ' of the active layer 25 and is spaced apart from the reference plane defined in the direction of the normal axis NX. The edge 13 d of the second face 13 b extends from one end of one of the side faces (20a, 20b) of one of the laser structures 13 (for example, the side face 2〇a) to the other (for example, the side face 20b) One end. The edge of the insect crystal face is scratched in the morning. Alternatively, the edge 13c extends from one end of one of the pair of sides (20a, 20b) (e.g., side 2〇a) to the side edge 30b. The recess 30 extends from the side surface 20b along the a-n plane. The recess 30 is located at one end of the side surface 20a. In this embodiment, the support base 17 of the laser structure 13 may have a recess 3 2 provided in another cut section (for example, the second cut section 29) and corresponding to the scribed groove. . The recess 32 extends along, for example, the side 2〇a of the group III nitride semiconductor laser element u. The recess 32 also has a score mark similarly to the recess 30. The recess 32 may also have the same shape as, for example, the recess 30. The recess 32 also extends along the n-plane as the recess 3〇. The scribed groove is useful for guiding the direction of the cut. When, for example, the support base 17 152214.doc • 26· 201140974 is thinner than the depth of the scribed groove, the recesses 3 〇, 3 2 sometimes coincide with the semiconductor region 19. The group III nitride semiconductor laser device 丨丨 includes an n-side light guiding layer 35 and a p-side light guiding layer 37. The n-side light guiding layer 35 includes a first portion 35a and a second portion 35b, and the n-side light guiding layer 35 includes, for example, GaN, InGaN, or the like. The p-side light guiding layer 37 includes a first portion 37a and a second portion 37b, and the p-side light guiding layer 37 includes, for example, GaN or InGaN. The carrier barrier layer 39 is provided between, for example, the first portion 37a and the second portion 37b. The back surface 17b of the support base 17 is provided with another electrode 41 which covers, for example, the back surface 17b of the support base 17. Fig. 2 is a view showing the energy band structure of an active layer of a group III nitride semiconductor laser device. Fig. 3 is a view showing polarization of luminescence of the active layer 25 of the lanthanide nitride semiconductor laser device 丨丨. Fig. 4 is a view schematically showing a cross section defined by a 〇 axis and an m axis. Referring to part (a) of Fig. 2, there are three possible transitions between the conduction band and the valence band near the defect point of the band structure BAND. The A energy band and the B energy band have a relatively small energy difference. The light emitted by the conduction band and the transition of the a band Ea is polarized in the a-axis direction, and the light emitted by the transition band Eb of the conduction band and the b band is polarized in the direction in which the c-axis is projected to the principal surface. Regarding the laser oscillation, the threshold of the transition Ea is smaller than the value between the transitions Eb. Referring to part (b) of Fig. 2, the spectrum of light in the LED mode of the πι nitride semiconductor laser element 11 is exhibited. The light in the LED mode includes a polarization component η in the direction of the a-axis of the hexagonal III-nitride semiconductor and a polarization component 12' polarization component in which the c-axis of the hexagonal bismuth nitride semiconductor is projected in the direction of the principal surface. II is larger than the polarizing component 12. The degree of polarization ρ is defined by η_ 12) / (11 + 12). The use of the III-nitride semiconductor laser element 152214.doc -27- 201140974 laser resonator can be used to illuminate the mode light with a large intensity of illumination in the LED mode. As shown in Fig. 3, at least one of the first and second fractured faces 27, 29 or the dielectric multilayer films 43a, 43b provided thereon may be further included. End face coating can be used on the fracture faces 27, 29. The reflectance can be adjusted by coating the end face. As shown in part (b) of Fig. 3, the laser light from the active layer 25 is polarized in the direction of the a-axis of the hexagonal group III nitride semiconductor. In the group m nitride semiconductor laser element 11, the energy band transition of the low threshold current can be made polarized. The i-th and second cut sections 27 and 29 used in the laser resonator are different from the cleaved surfaces such as the c-plane, the m-plane, or the a-plane. However, the first and second cutting sections 27 and 29 have flatness and perpendicularity as mirror surfaces for the resonator. Therefore, using the first and second fractured faces 27 and 29 and the laser waveguides extending between the fractured faces 27 and 29 as shown in part (b) of Fig. 3, the low threshold can be realized by the light emission of the transition Ea. In the laser oscillation, the light emission of the transition Ea is stronger than the light emission of the transition Eb in the direction in which the c-axis is projected to the main surface. In the group III nitride semiconductor laser device 11, the first and second fracture faces 27 and 29 each have an end face 17c of the support base 17 and an end face 19c of the semiconductor region 19. The end face 17c and the end face 19c are made of a dielectric multilayer film 43a. cover. The angle between the normal vector NA of the end face 17c of the base 17 and the end face 25c of the active layer 25 and the m-axis vector MA of the active layer 25 is defined by the component (BETA) j and the component (BETA). (BETAh is defined on the first plane S1 defined by the c-axis and the m-axis of the group III nitride semiconductor, and the component (beta) 2 is defined in the first plane S1 (not shown for ease of understanding, 152214) .doc • 28- 201140974 However, it can be referred to as "S1" and the second plane S2 orthogonal to the normal axis NX (not shown for convenience of understanding, but can be referred to as "S2"). Preferably, the component ( BETA) is in a range of (ALPHA-5) or more (ALPHA+5) degrees or less on the first plane S1 defined by the c-axis and the m-axis of the group III nitride semiconductor. In Fig. 4, The angular range is expressed as a representative angle between the m-plane and the reference surface Fa. For the sake of easy understanding, in Fig. 4, the representative surface sM is drawn from the inner side and the outer side of the laser structure. The surface Fa extends along the end surface 25c of the active layer 25. The (1) group nitride semiconductor laser element 11 has a relationship from the c-axis and the m-axis. It is preferable that the component (BETA) 2 is in the range of _5 degrees or more and +5 degrees or less on the second plane S2 at the angle BETA obtained from the other. 'betaL^etaV+cbeta)22. At this time, the end faces 27 and 29 of the bismuth nitride semiconductor laser element 11 satisfy the above-described perpendicularity with respect to an angle defined on the surface perpendicular to the normal axis NX of the semipolar surface 17a. Referring again to Fig. 1, it can be seen that in the group III nitride semiconductor laser device, it is preferable that the thickness of the support substrate 17 is DS μη or less. Among the group III nitride semiconductor laser elements, it is suitable to obtain a good cut surface for a laser resonator. In the group III nitride semiconductor laser device, it is more preferable that the thickness of the support substrate 17 is 10 μm or more and 1 μm or less. The in-nitride semiconductor laser element 11 is further adapted to obtain an excellent cut surface for a laser resonator. Moreover, the operation becomes easy and the yield can be improved. In the III-nitride semiconductor laser device, the angle α between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is preferably 45 degrees 152214.doc -29·201140974 or more. Good is below 80 degrees. Further, the angle alpha is preferably 100 degrees or more, and preferably 135 degrees or less. The end face formed by pressing at an angle of less than 45 degrees and more than 135 degrees has a high possibility of including a claw face. Moreover, at an angle of more than 80 degrees and less than 1 degree, there is a possibility that flatness and verticality are not obtained. In the group III nitride semiconductor laser device, the angle ALPHA formed by the normal axis Νχ and the c-axis of the hexagonal group III nitride semiconductor is more preferably 63 degrees or more and more preferably 80 degrees or less. Further, the angle ALPHA is preferably 100 degrees or more, and preferably 117 degrees or less. A portion of the end face formed by pressing at an angle of less than 63 degrees and more than 117 degrees may have an m-plane. Moreover, at an angle of more than 80 degrees and less than 1 degree, the desired flatness and perpendicularity cannot be obtained. The semipolar primary surface 17a may be any of a {20-21} plane, a {10-11} plane, a face, and a {10-1-1} face. Further, a surface which is slightly inclined from the surface of the surface at a level of +4 degrees or more and +4 degrees or less is also preferably used as the main surface. The first and second end faces 27 and 29 having sufficient flatness and perpendicularity to the extent that the laser resonator of the group m nitride semiconductor laser device 11 can be formed can be provided on the typical semipolar surface 17a. . Moreover, an end surface exhibiting sufficient flatness and perpendicularity can be obtained within a range of angles across the surface orientations of the above-mentioned types. In the group III nitride semiconductor laser device, the buildup defect density of the support substrate 17 may be 1xlO4 cnT1 or less. Since the density of the laminated defects is lxl 〇 4 em-i or less, the possibility of damage to the flatness and/or verticality of the cut surface due to an accidental event is low. Moreover, the support substrate 17 may comprise GaN, ΑιΝ, 152214.doc -30- 201140974

AlGaN、lnGaN& InA1GaN中之任一者。當使用包含該等氮 化錄系半導體之基板時，可獲得能用作諳振器之端面27、 29°當使用A1N或者AlGaN基板時，可提高偏光度，且可 藉由低折射率而強化光束缚。當使用InGaN基板時，可減 小基板與發光層之晶格失配率，且可提高結晶品質。 圖5係表示製作本實施形態之ΠΙ族氮化物半導體雷射元 件之方法的主要步驟之圖式。參照圖6之（a)部可知，表示 有基板51 ^步驟si〇i中，準備用於製作⑴族氮化物半導體 雷射元件之基板5 1。基板5 1之六方晶系in族氮化物半導體 之c軸（向量VC)係相對於法線軸NX而向六方晶系in族氮化 物半導體之m軸方向（向量VM)以有限的角度ALPHA傾斜。 因此，基板5 1具有包含六方晶系m族氮化物半導體之半極 性主面5 1 a。 步驟S102中，形成基板產物犯。圖6之（a)部中，基板產 物SP係描繪成大致圓板形之構件，但基板產物SP之形狀並 不限於此。為了獲得基板產物SP，首先，於步驟w 〇3中形 成雷射構造體55。雷射構造體55包含半導體區域53及基板 51 ’於步驟S103中，半導體區域53係形成於半極性主面 51 a上。為了形成半導體區域53，於半極性主面513上依序 成長第1導電型氮化鎵系半導體區域57'發光層59、及第2 導電型氛化鎵系半導體區域61。氮化鎵系半導體區域57可 包含例如η型包覆層，氮化鎵系半導體區域61可包含例如p 型包覆層。發光層59可設於氮化鎵系半導體區域57與氮化 鎵系半導體區域61之間’且可包含活性層、導光層及電子 152214.doc 31 201140974 阻措層等》氮化鎵系半導體區域57、發光層59、及第2導 電里氮化鎵系半導體區域61沿半極性主面51 a之法線軸NX 排列。該等半導體層係磊晶成長。半導體區域53上被絕緣 膜54覆蓋。絕緣膜54包含例如矽氧化物。絕緣膜54具有開 口 54a。開口 54a形成為例如條紋形狀。 步驟S104中’於雷射構造體55上形成陽極電極58a及陰 極電極58b。而且’於在基板51之背面形成電極之間，對 結晶成長中所使用之基板的背面進行研磨，形成所需之厚 度DSUB的基板產物SP。形成電極時，例如，陽極電極58a 形成於半導體區域53上，而且陰極電極58b形成於基板51 之背面（研磨面）5 lb上。陽極電極58a於X軸方向延伸，陰 極電極58b覆蓋於整個背面51b。藉由該等步驟形成基板產 物SP。基板產物SP包含第1面63a、及位於其之相反側之第 2面63b。半導體區域53位於第2面63b與基板51之間。 步驟S 105中，如圖6之（b)部所示，於基板產物SP之第1 面63a作刻劃。該刻劃係使用雷射刻劃器1 〇a而進行。該步 驟S105中’藉由刻劃而形成刻劃槽65a。圖6之（b)部中，已 經形成5個刻劃槽’再使用雷射光束lb形成刻劃槽65b。刻 劃槽65 a之長度比由六方晶系ΠΙ族氣化物半導體之a軸及法 線軸NX所規定之a-n面與第1面63a的交又線AIS之長度更 短，交又線AIS之一部分受到雷射光束LB之照射。藉由雷 射光束LB之照射，於第1面63a上形成延伸於特定之方向且 及於半導體區域之槽。該刻劃槽65a可形成於例如基板產 物sp之一個邊緣。而且’可形成沿交又線AIS排列之複數 152214.doc •32· 201140974 個刻劃槽。為了形成各個刻劃槽，較佳為，以雷射光束 大致垂直地入射於第1面63a之方式，於步驟S105中，相對 於第1面63a調整雷射光束LB之軸。雷射光束lb之軸的偏 離範圍可為例如相對於第1面63a之法線軸偏離-5度以上+5 度以下。 刻劃槽65a有利於導引割斷行進之方向。刻劃槽65&具有 深度（Z軸方向之值）、寬度（X轴方向之值）及長度（γ軸方向 之值），而且’關於深度及長度方向沿a_n面延伸。為了向 雷射構造體55提供用於諧振器之割斷面，刻劃槽65&有利 於導引割斷行進之方向，且形成於基板（支持基體17)51之 背面51a ’而且，對雷射構造體μ之第2面63b進行按壓。 割斷係以刻劃槽65a為起點於自第1面63a朝向第2面63b之 方向行進，且亦於與其交叉之方向行進。 由用於割斷之按壓力所產生之彎曲力矩分佈於第2面（磊 晶面）63b之表層，且認為，該彎曲力矩之分佈於規定刻劃 槽65a之排列方向的平面或者直線上為最大，較佳為，對 準該平面或者直線而施加用於割斷之按壓力。另外認為， 較大之彎曲力矩為形成優良之諧振鏡的一個有利因素。 ' 步驟S106中，如圖6之（c)部所示’藉由對基板產物卯之 • 第2面631?之按壓而進行基板產物SP之分離，形成基板產物 SP1及雷射條LB 1。按壓係使用例如刮刀69等致斷裝置而 進行。刮刀69包含於一個方向延伸之邊緣69a、以及規定 邊緣69a之至少2個刮刀面69b、69c。而且，基板產物spi 之按壓係於支持裝置70上進行。支持裝置7〇包含支持面 152214.doc -33- 201140974 70a與凹部70b，凹部70b係於一個方向延伸。凹部7〇b形成 於支持面70a。使基板產物SP1之刻劃槽65a之朝向及位置 對準支持裝置70之凹部70b的延伸方向，從而使基板產物 SP1定位於支持裝置70上的凹部7〇b。使致斷裝置之邊緣之 朝向對準凹部70b之延伸方向’而自與第2面63b交叉之方 向使致斷裝置之邊緣抵壓於基板產物SP1。交叉方向較佳 為與第2面63b大致垂直之方向。藉此，進行基板產物”之 分離’形成基板產物SP1及雷射條LB1。藉由抵壓，形成 具有第1及第2端面67a、67b之雷射條LB1，該等端面67a、 67b具有至少發光層之一部分可適於半導體雷射之諧振鏡 之程度的垂直性及平坦性。 為了導引割斷之行進方向，刻劃槽之排列形成於基板51 之背面51b’而且’於雷射構造體55之第2面63b進行按 壓。割斷係以刻劃槽為起點於自第！面63a朝向第2面63b之 方向（例如Z轴方向）行進，且亦於與其交叉之方向（例如γ 軸方向）行進。 於刻劃基板產物SP1之步驟中，可以與ΙΠ族氮化物半導 體雷射元件之元件寬度等值的間距形成刻劃槽。因以元件 寬度之間距而形成刻劃槽’故而，於Υ轴方向之割斷之行 進中，以各元件之距離而進行割斷之導引。因此，可期待 於割斷之生成方向進行切實之導引。以與元件寬度等值之 間距而排列的刻劃槽係導引割斷之行進方向。該排列可有 利於位於該等刻劃槽之間的雷射條紋之端面之品質。 或者，於刻劃基板產物SP 1之步驟中，可以與ΠΙ族氮化 152214.doc • 34 - 201140974 物半導體雷射元件之元件寃度之複數倍等值的間距形成刻 一·槽例如田以與元件寬度之2倍等值之間距而形成刻劃 槽時於γ軸方向之割斷之行進時，對割斷進行導引。因 此於割斷之行進時可期待良好之導引。以與元件寬度之 二倍等值之間距而排列的刻劃槽係對割斷之行進方向進行 導引。該排列有利於位於該等刻劃槽之間的2個雷射條紋 之端面之品質。 當沿由a軸及法線軸所規定之平面而於基板背面形成刻 劃槽及其排列並且藉由到刀對薄膜側進行按壓而斷裂時， 可製作具有優良之平坦性及垂直性之諧振鏡，可提高半極 性面上之半導體雷射之振盪良率。 所形成之雷射條LB1具有藉由上述分離而形成之第1及 第2端面67a、67b，端面67a、67b各自自第1面63a延伸至 第2面63b。因此’端面67a、67b構成該ΙΠ族氮化物半導體 雷射元件之雷射諧振器，且與XZ面交又。該又2面係與由 六方晶系III族氮化物半導體之m轴及法線轴NX所規定之 m-n面相對應。 根據該方法，於六方晶系III族氮化物半導體之a軸之方 向刻劃基板產物SP之第1面63a之後，藉由對基板產物sp之 第2面63 b之按壓而進行基板產物SP之分離，形成新的基板 產物SP1及雷射條LB 1。因此，以與m-n面交又之方式，於 雷射條LB1形成第1及第2端面67a、67b。藉由該端面形 成，第1及第2端面67a、67b可具有能夠構成該in族氮化物 半導體雷射元件之雷射諧振器之程度的充分之平坦性及垂 152214.doc -35- 201140974 直性。 而且，該方法中，所形成之雷射波導係於六方晶系ΠΙ族 氮化物之C轴之傾斜的方向延伸。不使用乾式蝕刻面，形 成可提供該雷射波導之諧振鏡端面。 根據該方法’藉由基板產物SP1之割斷，形成新的基板 產物SP1及雷射條LB1。步驟S107中，反覆藉由按壓而進 行分離，而製作多個雷射條。該割斷係使用比雷射條LB1 之割斷線BREAK更短之刻劃槽65a而產生。 步驟S108中，於雷射條LB1之端面67 a、67b形成介電質 多層膜，而形成雷射條產物《步驟S109中，將該雷射條產 物分離成各個半導體雷射之晶片。半導體雷射之晶片上形 成用於該半導體雷射之一對側面。 進行雷射條LB1或者雷射條產物之分離而製作πΐ族氮化 物半導體雷射元件。刻劃基板產物SP之際，當以與in族氮 化物半導體雷射元件之元件寬度相等的間距形成刻劃槽 時’刻劃槽之位置可對準雷射條上之分離位置。以用於半 導體雷射之一對側面對準刻劃槽的位置之方式，進行雷射 條LB1或雷射條產物之分離^可使雷射條紋自用於半導體 雷射之一對侧面分離，而且，可使刻劃槽（刻劃痕）之位置 自雷射條紋分離。 如前述，刻劃基板產物SP之際，可以與III族氮化物半導 體雷射元件之元件寬度之複數倍等值的間距形成刻劃槽。 當例如以等於元件寬度2倍的間距形成刻劃槽時，刻劃槽 之位置可定位於雷射條之晶片分離之位置。以用於半導體 152214.doc -36- 201140974 雷射之側面中的任一者對準刻劃槽之位置的方式，進行雷 射條LB 1或雷射條產物之分離。 本貫施形態之製造方法中’角度ALPHA可為45度以上80 度以下及100度以上135度以下之範圍。於小於45度及超過 135度之角度，藉由按壓而形成之端面包含111面的可能性變 高。而且，於超過80度且小於1〇〇度之角度，有無法獲得 所需平坦性及垂直性之虞。較佳為，角度ALPHA係於63度 以上80度以下及100度以上117度以下之範圍。於小於45度 及超過135度之角度’藉由按壓而形成之端面的一部分可 能會出現m面。而且，於超過8〇度且小於100度之角度，有 無法獲得所需平坦性及垂直性之虞。半極性主面51a可為 {20-21}面、{10-11}面、{20-2-1}面、及{1〇_1_1}面中之任 一者。進而’自該等面於_4度以上+4度以下之範圍微傾斜 之面亦適於作為上述主面。該等典型之半極性面上，可提 供具有能夠構成該III族氮化物半導體雷射元件之雷射諧振 器之程度的充分之平坦性及垂直性的用於雷射諧振器之端 面。 而且’基板51可包含GaN、AIN、AlGaN、InGaN及 InAlGaN中之任一者。當使用包含該等氮化鎵系半導體之 基板時，可獲得能用作雷射諧振器之端面。較佳為，基板 5 1包含GaN。 於形成基板產物SP之步驟s 104中，結晶成長中所使用之 半導體基板被施以切片或者研削加工，而使基板厚成為 400 μηι以下’第1面63 b可為藉由研磨而形成之加工面。該 152214.doc •37· 201140974 基板厚下’能以良好之良率而形成具有能構成該m族氮化 物半導體雷射元件之雷射諧振器之程度的充分之平坦性、 垂直性或者無離子損壞之端面67a、67b。第1面63b為藉由 研磨而形成之研磨面，若研磨後基板厚為1〇〇 μπι以下則更 佳。而且’為了能比較容易地處理基板產物Sp，基板厚較 佳為50 μπι以上。 本實施形態之雷射端面之製造方法中，雷射條LB1上亦 規定有參照圖3而說明之角度BETA »雷射條LB 1上，較佳 為，角度BETA之成分（BETA)〗係在由III族氮化物半導體之 c軸及m轴所規定之第1平面（與參照圖3進行之說明中的第1 平面S1相對應之面）上於（ALPHA-5)度以上（ALPHA+5)度以 下之範圍。雷射條LB1之端面67a、67b關於自c軸及m軸中 之一者向另一方所獲取之角度BETA的角度成分滿足上述 垂直性。而且，較佳為，角度BETA之成分（BETA)2在第2 平面（與圖3所示之第2平面S2相對應之面）上於_5度以上+5 度以下之範圍。此時’雷射條LB1之端面67a、67b係於與 半極性面5 1 a之法線軸NX垂直的面上關於規定之角度 BETA之角度成分滿足上述垂直性。 化面67a、67b係因對蟲晶成長於半極性面51a上的複數 個氮化鎵系半導體層之按壓而引起的斷裂而形成。因半極 性面5 1 a上之磊晶膜之緣故，端面67a、67b並非係目前為 止用作譜振鏡之c面、m面、或者a面等低面指數之解理 面。然而，當半極性面51a上之磊晶膜之積層產生斷裂 時，端面67a、67b具有可適用於諸振鏡之平坦性及垂直 152214.doc • 38 · 201140974 性。 (實施例1) 如下所述，準備半極性面GaN基板，觀察割斷面之垂直 性。基板係使用自利用HVPE法較厚地成長之（0001)(}31^錠 於m軸方向以75度之角度切取的（20-21}面GaN基板。GaN 基板之主面係被施以鏡面精加工，背面係被施以研削精加 工而成為緞紋狀態。基板之厚度為37〇μπ1。 於緞紋狀態之背面側，使用鑽石筆，垂直於將c軸投影 至基板主面之方向而施加劃線後，進行按壓而割斷基板。 為了觀察所得之割斷面之垂直性，使用掃描型電子顯微鏡 自a面方向觀察基板。 圖7之（a)部係自a面方向觀察割斷面之掃描型電子顯微鏡 像，右側之端面為割斷面。可知，割斷面相對於半極性主 面具有平坦性及垂直性。圖7之（b)部係觀察割斷面之表面 之掃指型電子顯微鏡像，基板背面形成有刻劃痕。圖中之 「表面」表示磊晶面，「背面」表示基板背面。該基板之 厚度為90 μπι。 以下，對基板背面形成有刻劃槽之基板產物SP1的斷裂 進行說明。參照圖8之（a)部可知，基板產物spi支持於用 於割斷之支持裝置70的支持面70a。基板產物spi之刻劃槽 65a之排列方向與凹部7〇b之方向一致。刻劃槽65&具有側 面64a、64b、底面64c、及一對端面64d。當於支持裝置7〇 上之基板產物SP1之表面使用到刀69進行按壓時，如圖9之 ⑷部所示，基板產物spi翹曲，磊晶表面成為凹狀。因 152214.doc -39- 201140974 此，於雷射構造體55之半導體區域53中，如圖8之化）部所 示，認為，由刻劃槽65a之排列方向所規定之割斷線的正 下方的半導體區域53之表層的彎曲力矩表現為極大，而 且，隨著自割斷線之正下方向兩側（χ軸之正方向及負方 向）分離，·彎曲力矩減少。較佳為，使刮刀69之接觸方向 與該割斷線一致》此時，彎曲力矩係於刮刀正下方及割斷 線正下方為最大，故而，於半導體薄膜側可沿其而獲得如 圖7之（b)部所示之平坦之端面，雷射條具有作為諧振鏡之 高品質的上述端面。而且，雷射條包含複數個半導體雷射 元件之排列’每個半導體雷射元件之端面之品質偏差較 小’因此，割斷面之品質得以穩定化。根據該半導體雷射 及其製造方法，可改善諧振鏡之品質。 繼而’對於磊晶面上形成有刻劃槽之基板產物的斷裂進 行說明。該基板產物與基板產物SP1不同。當使用到刀69 按壓支持裝置70上之基板產物時’如圖9之（b)部所示，該 基板產物向與基板產物SP1之翹曲相反的方向翹曲，從而 磊晶表面成為凸狀。由刻劃槽66a之排列方向所規定之割 斷線的正下方的基板背面之表層的彎曲力矩表現為極大。 圖9之（c)部表示藉由圖9之（a)部所示之方法而製作的雷 射條。該雷射條具有殘留於基板背面之刻劃痕68。刻劃痕 68位於通過2個半導體雷射之端面的發光區域的基準面 ROP之間。 為了製作雷射條’刻劃槽之排列可以半導體雷射之寬度 的間距P1形成。該排列下，如圖10之⑷部所示，雷射條 152214.doc •40- 201140974 LB2上’以半導體雷射之寬度之間距pl而形成有刻劃痕 SB1 °當使該雷射條LB2分離而形成半導體雷射元件LD1 時’如圖10之（b)部所示，半導體雷射LD1於支持基體之底 面之四個角具有刻劃痕QB1。於雷射構造體之端部，割斷 面CAV1將一對刻劃痕QB1之邊緣EG1及雷射構造體之第2 面之邊緣EG2連接。割斷面CAV1可適用於雷射諧振器其 具有特別優良之平坦性及垂直性。 為了製作雷射條’刻劃槽之排列可以與半導體雷射之寬 度之2倍相對應的間距P2而形成。該排列下，如圖11之（a) 部所不’雷射條LB3上，以半導體雷射之寬度之間距1>2而 形成有刻劃痕SB2。當將該雷射條LB3分離而形成半導體 雷射件LD2時，如π之部所示，半導體雷射ld2於支 持基體之底面之一邊緣具有2個刻劃痕qB2。於雷射構造 體之鳊部，割斷面CAV2將刻劃痕QB2之邊緣EG3及雷射構 仏體之第2面之邊緣EG2連接。割斷面^八、】可適用於雷射 ’白振器且具有優良之平坦性及垂直性。 為了製作雷射條，刻劃槽之排列可以與半導體雷射之寬 度之2倍相對應的間距p2而形成。該排列下，如圖丨2之（a) 部所示，雷射條LB4上，以半導體雷射之寬度之間距？2而 形成有刻劃痕SB3。當將該雷射條LB4分離而形成半導體 雷射το件LD3時’如圖12之（b)部所示，半導體雷射Lm於 夺基體之底面之一個邊緣具有單一的刻劃痕QB 3，而於 f —個邊緣具有單一的刻劃痕QB3。於雷射構造體之端 邠，割斷面CAV3將刻劃痕QB3之邊緣EG3及雷射構造體之 152214.doc -41· 201140974 第2面之邊緣EG2連接。割斷面CAV3可適用於雷射諧振器 且具有優良之平坦性及垂直性。 (實施例2) 可知，實施例1中，於具有半極性{20·21}面之GaN基板 上’垂直於將c轴投影至基板主面之方向而施加劃線進行 按壓而得之割斷面，相對於基板主面具有平坦性及鸯直 性。因此’為了調查該割斷面用作雷射之諧振器之有用 性，如下所述，利用有機金屬氣相成長法而成長圖13所示 之雷射二極體。原料係使用三甲基鎵（TMGa)、三甲基銘 (TMA1)、三甲基銦（TMIn)、氨（NH3)、矽烷（以仏）。準備基 板71。於基板71，自利用HVPE法較厚地成長之（〇〇〇1)GaN 錠於m軸方向以自〇度〜9〇度之範圍之角度使用晶圓切片裝 置切取，製作C軸向m軸方向之傾斜角度ALPHA具有〇度〜 9〇度之範圍之所需之傾斜角的GaN基板。例如，當以乃度 之角度切取時，獲得{20-21}面（^]^基板，於圖8之（&)部所 示之六方晶系之晶格由參照符號71a表示。 成長之則，為了調查基板之積層缺陷密度，利用陰極發 光法觀察基板。陰極發光時，觀察藉由電子束而激發之載 體之發光過程，若存在積層缺陷，則於其附近，載體進行 非發光再結合，故而觀察到呈暗線狀。求出該暗線之單位 長度之密度（線密度），定義為積層缺陷密度。此處，為了 調查積層缺陷密度而使用非破壞測定之陰極發光法，但亦 可使用破壞測定之穿透型電子顯微鏡。穿透型電子顯微鏡 中，s自a軸方向觀察試樣斷面時，自基板向試樣表面於m 152214.doc -42- 201140974 軸方向伸展之缺陷係支持基體中所含之積層缺陷，與陰極 發光法之情形相同，可求出積層缺陷之線密度。 將該基板71配置於反應爐内之晶座上之後，按照以下之 成長順序成長磊晶層，而於η型GaN基板71上形成半導體 區域。首先，成長厚度為1000 nm之η型GaN層72。繼而， 成長厚度為1200 nm之η型In A1 GaN包覆層73。然而，成長 厚度為200 nm之η型GaN導引層74a及厚度為65 nm之無摻 雜InGaN導引層74b之後，成長由厚度為15 nm之GaN/厚度 為3 nm之InGaN構成的3週期MQW75。然後，成長厚度為 65 nm之無摻雜InGaN導引層76a、厚度為20 nm之p型 AlGaN阻擋層77及厚度為200 nm之p型GaN導引層76b。繼 而，成長厚度為400 nm之p型InAlGaN包覆層77。最後，成 長厚度為50 nm之ρ型GaN接觸層78。藉由該等步驟形成雷 射構造體。 將Si02之絕緣膜79成膜於接觸層（雷射構造體之磊晶 面）78上之後，使用光微影法及於濕式蝕刻而形成寬度為 1 0 μιη之條紋孔。此處，以如下之兩種方式形成條紋方向 之接觸孔。雷射條紋為（1)Μ方向（接觸孔沿著由c軸及m軸 所規定之既定之面的方向）者，（2)A方向者：<11-20>方向 者。 形成條紋孔之後，蒸鍵包含Ni/Au之ρ側電極80a及包含 Ti/Al之焊墊電極。繼而，於GaN基板（GaN晶圓）之背面使 用鑽石漿料進行研磨，而製作背面為鏡面狀態之基板產 物。此時，使用接觸式膜厚計測定基板產物之厚度。測定 152214.doc -43· 201140974 厚度時’亦可藉由顯微鏡自試樣斷面進行測定。顯微鏡可 使用光學顯微鏡、或掃描型電子顯微鏡。GaN基板（GaN晶 圓）之者面（研磨面）係藉由蒸鍍而形成包含Ti/Al/Ti/Au之n 側電極80b。 針對該等2種雷射條紋製作諧振鏡時，使用採用波長為 355 nm之YAG雷射之雷射刻劃器。當使用雷射刻劃器進行 斷裂時，與使㈣石刻劃之情形相比，可提高振盪晶片良 率。作為刻劃槽之形成條件，可使用以下條件：雷射光輸 出100 mW;掃描速度為5 mm/se所形成之刻劃槽係例如 長度為30 μηι、寬度為1〇 μηι、深度為4〇 μπι之槽。藉由以 800 μπι之間距穿過基板之絕緣膜開口部位而對磊晶表面直 接照射雷射光，形成有刻劃槽。諧振器長度設為6〇〇 μιη。 田藉由使用刮刀進行割斷，而製作用於譜振鏡之端面。 此處，以如下之兩種方式形成刻劃槽。即，刻劃槽形成於 薄膜側者（方法Α用），以及刻劃槽形成於背面側者（方法Β 用）。刻劃槽之行之間隔係用於諧振器長度之值6〇〇 μπι。 當刻劃槽形成於磊晶面側（磊晶面側）時，按壓基板背面（方 法（Α))。當刻劃槽形成於背面側時，按壓磊晶面（半導體區 域側）（方法（Β))。藉由該等按壓而引起基板產物之斷裂， 而製作各個雷射條。 關於{20-21}面之GaN基板’更具體而言’表示結晶方位 與割斷面之關係者係圖14之（a)部與圖“之沙）部。圖14之 (a)部係表示將雷射條紋設於（1)m方向之情形，表示有半極 性面71a以及用於雷射諧振器之端面81a、81b。端面81a、 152214.doc •44- 201140974 81b與半極性面71a大致正交，但與先前之c面、m面或者a 面等目前為止之解理面不同。圖14之（b)部係表示將雷射條 紋設於（2)<11-20>方向之情形，表示有半極性面71a以及用 於雷射讀振器之端面81c、81d。端面81c、81d與半極性面 71a大致正交，且由a面構成。 當使用方法B時，對因斷裂而形成之多個雷射條之割斷 面利用掃描型電子顯微鏡進行觀察發現，（1)及（2)各自均 未觀察到明顯之凹凸，且雷射條間之偏差較小。因此，割 斷面之生成較穩疋。可推斷，割斷面之平坦性（凹凸之大 小）於1.4X10·8平方米之區域内為2〇 nm以下。進而，割斷 面相對於試樣表面之垂直性係於_5度以上+5度以下之範圍 内。 於雷射條之端面利用真空蒸鍍法塗佈有介電質多層膜。 介電質多層膜係例如將Si〇2# TiC>2交替積層而構成。設計 成，膜厚於50〜1〇〇 nm之範圍而調整，而使反射率之中心 波長係於500〜530 nm之範圍。將一側之反射面設為⑺週 ^ ’將反射率之設計值設計為約95%，將另—側之反射面 設為6週期，將反射率之設計值設為約8〇%。 ^室溫下通電而進行評估。電源係使用脈寬為500 ns、 佔空比為0.1%之脈衝電源’使探針落於表面電極而通電。 進行光輸出測定時，利用光電二極體檢測出來自雷射條端 發光而調查電流-光輸出特性（I-L特性）。測定發光 波長時’使來自雷射條端面之發光穿過光纖，使用光譜分 析儀作為_ ^進行光譜料。魅偏光狀態時，使來 152214.doc -45· 201140974 自雷射條之發光穿過偏光板而旋轉，從而調查偏光狀態。 當觀測LED模式光時，將光纖配置於雷射條表面側，藉此 測定出自表面放出的光。 於所有的雷射下確認振盪後之偏光狀態後可知，向a軸 方向偏光。振盪波長為500〜530 nm。 於所有的雷射下測定LED模式（自然放出光）之偏光狀 態。令a軸之方向之偏光成分作為π，令將m軸投影至主面 之方向之偏光成分作為12，將（11-12)/(11+12)定義為偏光度 P。如此’調查求得之偏光度p與閾值電流密度之最小值的 關係之後’獲得圖9。根據圖9可知，當偏光度為正時，（1) 雷射條紋Μ方向之雷射下’閾值電流密度大幅下降。亦 即’可知，當偏光度為正（11>12) '且於傾斜方向設有波導 時，閾值電流密度大幅下降。 圖15所示之資料係以下内容。 偏光度 閾值電流 閾值電流 (M方向條紋） (<11-20>條紋） 0.08 64 20 0.05 18 42 0.15 9 48 0.276 7 52 0.4 6 調查GaN基板之c軸朝向m軸方向的傾斜角與振盪良率之 關係後，獲得圖16。本實施例中，振盪良率係定義為（振 盪晶片數）/(測定晶片數）。而且，圖16係描繪出基板之積 152214.doc • 46 - 201140974 層缺陷密度為lx104(cm-丨）以下之基板、且雷射條紋為（1)M 方向之雷射者。根據圖16可知，當傾斜角為45度以下時， 振盈良率極其低。利用光學顯微鏡觀察端面狀態可知，於 小於45度之角度，幾乎所有晶片上均呈現m面，未獲得垂 直性。而且可知’傾斜角為63度以上80度以下之範圍内， 垂直性提高，振盪良率增加至50%以上。根據該等情況， GaN基板之傾斜角度之範圍最適宜為63度以上80度以下。 再者’於具有該結晶上等價之端面的角度範圍即1 〇〇度以 直 上117度以下之範圍内，可獲得同樣之結果。圖16所示 資料係以 下内容。 傾斜角 良率A 良率B 10 0.1 0.1 43 0.2 0.2 58 50 48 63 65 68 66 80 89 71 85 96 75 80 87 79 75 79 85 45 48 90 35 31 良率A表示於磊晶面進行刻劃且對基板背面進行按壓之方 法下的值。良率B係表示於基板背面進行刻劃且對磊晶面 進行按壓之方法下的值。角度係以「度」表示。 1522H.doc 47· 201140974 調查積層缺陷密度與振盪良率之關係’可獲得圖17。振 盡良率之定義係與上述相同。根據圖17可知，若積層缺陷 密度超過lxl(^(cnT1) ’則振盪良率會急遽下降。而且，利 用光學顯微鏡觀察端面狀態後發現，於振盪良率降低之樣 本中，端面之凹凸較激烈，未獲得平坦之割斷面。認為， 因存在積層缺陷’導致割斷難度存在差異。因此，基板中 所含之積層缺陷密度必需為ixl04(cm-i)以下。 圖17所示之資料係以下内容。 積層缺陷密度（cm·1) 良率A 良率B 500 80 94 1000 75 91 4000 70 80 8000 65 76 10000 20 36 50000 2 6 調查基板厚度與振盪良率之關係，可獲得圖18〇振盪良 率之定義係與上述相同。而且，圖18中係於基板之積層缺 陷密度為lxlO^cm·1)以下，而且雷射條紋為（1)Μ方向之雷 射之情形時描繪。根據圖18可知，當基板厚度薄於1〇〇 μιη 且厚於50 μηι時，振盪良率較高。其原因在於，若基板厚 度厚於100 μπι ’則割斷面之垂直性會惡化。而且，其原因 在於’若薄於50 μιη，則操作困難，晶片容易被破壞。因 上述原因’基板之厚度最適宜為5〇 μηι以上1〇〇 μιη以下。 圖18所示之資料係以下内容。 152214.doc •48· 201140974 基板厚 良率A 良率B 48 10 10 Β0 65 81 90 70 92 110 45 76 150 48 70 200 30 26 400 20 11 (實施例3) 實施例2中’係於具有{20-21}面之GaN基板上成長用於 半導體雷射之複數個遙晶膜。如上所述’藉由刻劃槽之形 成與按壓而形成光諧振器用之端面。為了找到其等端面之 候補’形成與（20-21)面成90度左右之角度，藉由計算而求 出與a面不同之面方位。參照圖i 9可知，以下之角度及面 方位相對於（20-21)面具有90度左右之角度。 具體之面指數 相對於{20-21}面之角度 (•1016) : 92.46度 (-1017) ·· 90.10度 (-1018) : 88.29度 圖20係表示（20-21)面與（_101_6)面及卜1〇16)面之原子配 置的圖式。圖21係表示（20-21)面與（_1〇1·7)面及（_1〇17)面 之原子配置的圖式。圖22係表示（2〇_21)面與（401-8)面及 (1018)面之原子配置的圖式。如圖2〇〜圖所示，箭頭所 不之局之原子配置表示電荷上為中性之原子之排列，週 152214.doc •49- 201140974 期性地呈現電性上為中性之原子配置。對於成長面獲得比 較垂直之面之理由可能係，因週期性地出現該電荷上為中 性之原子排列，使割斷面之生成變得比較穩定。 藉由包含上述實施例1〜3之多種實驗，角度ALPHA可介 於45度以上80度以下及1〇〇度以上135度以下之範圍。為了 提高振盪晶片良率，角度ALPHA可於63度以上80度以下及 100度以上117度以下之範圍。典型之半極性主面可為{2〇_ 21}面、{ 10-11}面、{20-2-1}面、及{1〇_卜1}面中之任一 者。進而，可為自該等半極性面偏離之微傾斜面。例如， 半極性主面可為自{20-21}面、{10-11}面、{20_2_1}面、 及{10-1-1}面中之任一面向〇!面方向傾斜_4度以上+4度以 下之範圍的微傾斜面。 以上之較佳實施形態中以利用圖式說明了本發明之原 理’但業者瞭解’本發明可於不脫離其原理之範圍内於配 置及細節上進行變更。本發明並不限於本實施形態中所揭 示之特定之構成。因此，對於自申請專利之範圍及其精神 之範圍而來之所有修正以及變更申請專利權。 產業上之可利用性 如以上之說明所述，根據本實施形態，可提供一種於六 方晶系III族氮化物之c軸向m軸之方向傾斜之支持基體的 半極性面上具有表示用於諧振鏡之高品質且可實現低閾值 電流的雷射諧振器之III族氮化物半導體雷射元件，而且， 根據本實施形態，可提供製作該瓜族氮化物半導體雷射元 件之方法。 I52214.doc -50· 201140974 【圖式簡單說明】 圖1係概略性地表示本實施形態之πι族氮化物半導體雷 射元件的構造之圖式。Any of AlGaN, lnGaN & InA1GaN. When a substrate including the nitride-based semiconductor is used, an end face 27 which can be used as a snubber, 29° can be obtained, and when an A1N or AlGaN substrate is used, the degree of polarization can be improved and can be enhanced by a low refractive index. Beam bound. When an InGaN substrate is used, the lattice mismatch ratio between the substrate and the light-emitting layer can be reduced, and the crystal quality can be improved. Fig. 5 is a view showing the main steps of a method of producing a bismuth nitride semiconductor laser device of the present embodiment. Referring to part (a) of Fig. 6, it is understood that the substrate 51 is formed in the substrate 51. In step si〇i, the substrate 5 1 for fabricating the (1)-nitride semiconductor laser device is prepared. The c-axis (vector VC) of the hexagonal indium nitride semiconductor of the substrate 51 is inclined at a finite angle ALPHA toward the m-axis direction (vector VM) of the hexagonal indium nitride semiconductor with respect to the normal axis NX. Therefore, the substrate 51 has a semipolar primary surface 51a including a hexagonal m-type nitride semiconductor. In step S102, a substrate product is formed. In the portion (a) of Fig. 6, the substrate product SP is drawn as a substantially disk-shaped member, but the shape of the substrate product SP is not limited thereto. In order to obtain the substrate product SP, first, the laser structure 55 is formed in the step w 〇3. The laser structure 55 includes a semiconductor region 53 and a substrate 51'. In step S103, a semiconductor region 53 is formed on the semipolar primary surface 51a. In order to form the semiconductor region 53, the first conductivity type gallium nitride based semiconductor region 57' light emitting layer 59 and the second conductive type gallium nitride semiconductor region 61 are sequentially grown on the semipolar primary surface 513. The gallium nitride based semiconductor region 57 may comprise, for example, an n-type cladding layer, and the gallium nitride based semiconductor region 61 may comprise, for example, a p-type cladding layer. The light-emitting layer 59 may be provided between the gallium nitride-based semiconductor region 57 and the gallium nitride-based semiconductor region 61 'and may include an active layer, a light guiding layer, and an electron 152214.doc 31 201140974 a resistive layer, etc." gallium nitride-based semiconductor The region 57, the light-emitting layer 59, and the second conductive gallium nitride-based semiconductor region 61 are arranged along the normal axis NX of the semipolar primary surface 51a. These semiconductor layers are epitaxially grown. The semiconductor region 53 is covered by an insulating film 54. The insulating film 54 contains, for example, cerium oxide. The insulating film 54 has an opening 54a. The opening 54a is formed in, for example, a stripe shape. In step S104, the anode electrode 58a and the cathode electrode 58b are formed on the laser structure 55. Further, the back surface of the substrate used for crystal growth is polished between the electrodes formed on the back surface of the substrate 51 to form a substrate product SP of a desired thickness DSUB. When the electrode is formed, for example, the anode electrode 58a is formed on the semiconductor region 53, and the cathode electrode 58b is formed on the back surface (polishing surface) 5 lb of the substrate 51. The anode electrode 58a extends in the X-axis direction, and the cathode electrode 58b covers the entire back surface 51b. The substrate product SP is formed by these steps. The substrate product SP includes a first surface 63a and a second surface 63b on the opposite side thereof. The semiconductor region 53 is located between the second surface 63b and the substrate 51. In step S105, as shown in part (b) of Fig. 6, the first surface 63a of the substrate product SP is scored. This scribe is performed using the laser scriber 1 〇a. In step S105, the scribed groove 65a is formed by scribing. In the portion (b) of Fig. 6, five scribed grooves have been formed, and the scribed grooves 65b are formed using the laser beam lb. The length of the scribed groove 65a is shorter than the length of the intersection AIS defined by the a-axis and the normal axis NX of the hexagonal bismuth hydride semiconductor and the first surface 63a, and a part of the AIS of the intersection and the line Irradiated by the laser beam LB. By the irradiation of the laser beam LB, a groove extending in a specific direction and in the semiconductor region is formed on the first surface 63a. The scribed groove 65a may be formed, for example, at one edge of the substrate product sp. Moreover, a plurality of 152214.doc •32·201140974 scribed grooves can be formed along the intersection and line AIS. In order to form each of the scribed grooves, it is preferable to adjust the axis of the laser beam LB with respect to the first surface 63a in step S105 so that the laser beam is incident on the first surface 63a substantially perpendicularly. The deviation range of the axis of the laser beam lb may be, for example, deviated by -5 degrees or more + 5 degrees or less with respect to the normal axis of the first surface 63a. The scribed groove 65a facilitates guiding the direction of the cut travel. The scribed grooves 65 & have depth (value in the Z-axis direction), width (value in the X-axis direction), and length (value in the γ-axis direction), and extend in the a_n plane with respect to the depth and the longitudinal direction. In order to provide the laser structure 55 with a cut plane for the resonator, the scribed groove 65& is advantageous for guiding the direction of the cut travel, and is formed on the back surface 51a' of the substrate (support base 17) 51 and, also for the laser structure The second surface 63b of the body μ is pressed. The cutting travels in the direction from the first surface 63a toward the second surface 63b with the scribed groove 65a as a starting point, and also travels in a direction intersecting therewith. The bending moment generated by the pressing force for cutting is distributed on the surface layer of the second surface (elevation surface) 63b, and it is considered that the distribution of the bending moment is the largest in the plane or straight line of the direction in which the predetermined groove 65a is arranged. Preferably, the pressing force for cutting is applied to the plane or straight line. In addition, it is considered that a large bending moment is an advantageous factor for forming an excellent resonant mirror. In step S106, as shown in part (c) of Fig. 6, the substrate product SP is separated by pressing the second surface 631 of the substrate product to form the substrate product SP1 and the laser strip LB1. The pressing is performed using a breaking device such as a doctor blade 69. The scraper 69 includes an edge 69a extending in one direction and at least two scraper faces 69b, 69c defining the edge 69a. Moreover, the pressing of the substrate product spi is performed on the support device 70. The support device 7A includes a support surface 152214.doc-33-201140974 70a and a recess 70b extending in one direction. The recess 7b is formed on the support surface 70a. The orientation and position of the scribed groove 65a of the substrate product SP1 are aligned with the extending direction of the recess 70b of the support device 70, thereby positioning the substrate product SP1 at the recess 7b on the support device 70. The edge of the breaking device is oriented in the direction in which the recess 70b extends, and the edge of the breaking device is pressed against the substrate product SP1 from the direction intersecting the second surface 63b. The intersecting direction is preferably a direction substantially perpendicular to the second surface 63b. Thereby, the substrate product "separation" is performed to form the substrate product SP1 and the laser strip LB1. By pressing, the laser strip LB1 having the first and second end faces 67a, 67b is formed, and the end faces 67a, 67b have at least One portion of the light-emitting layer can be adapted to the degree of verticality and flatness of the semiconductor laser's resonant mirror. To guide the direction of travel of the cut, the arrangement of the scribed grooves is formed on the back surface 51b' of the substrate 51 and in the laser structure The second surface 63b of the 55 is pressed. The cutting is performed in a direction from the fourth surface 63a toward the second surface 63b (for example, the Z-axis direction) with the scribed groove as a starting point, and also in a direction intersecting therewith (for example, the γ-axis direction) In the step of scribing the substrate product SP1, a scribed groove may be formed at a pitch equal to the width of the element width of the bismuth nitride semiconductor laser device. The scribed groove is formed by the distance between the element widths. When the cutting in the direction of the yaw axis is performed, the cutting is performed by the distance between the elements. Therefore, it is expected to be reliably guided in the direction in which the cutting is generated. The scribed grooves are arranged in a distance from the element width. Guiding the direction of travel of the cut. The arrangement may be advantageous for the quality of the end face of the laser stripe between the scribed grooves. Alternatively, in the step of scribing the substrate product SP1, it may be nitrided with the lanthanum 152214. Doc • 34 - 201140974 The spacing of the component dimensions of the material semiconductor laser element is equal to the equivalent value of the groove. For example, the groove is formed in the γ-axis direction when the groove is formed at a distance equal to twice the width of the element. When cutting is performed, the cutting is guided. Therefore, a good guiding can be expected during the cutting travel. The scribed grooves are arranged in a distance equal to twice the width of the component to guide the traveling direction of the cutting. The arrangement is advantageous for the quality of the end faces of the two laser stripes located between the scribed grooves. The scribed grooves and their arrangement are formed on the back surface of the substrate along a plane defined by the a-axis and the normal axis and by When the film is pressed against the film side to break, a resonant mirror having excellent flatness and perpendicularity can be produced, and the oscillation yield of the semiconductor laser on the semipolar surface can be improved. The formed laser bar LB1 has Above The first and second end faces 67a and 67b are formed so that the end faces 67a and 67b extend from the first face 63a to the second face 63b. Therefore, the end faces 67a and 67b constitute the laser resonance of the steroid-based nitride semiconductor laser device. And intersecting with XZ. The two sides are corresponding to the mn plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis NX. According to the method, the hexagonal III-nitride nitrogen After the first surface 63a of the substrate product SP is scribed in the direction of the a-axis of the semiconductor, the substrate product SP is separated by pressing the second surface 63b of the substrate product sp to form a new substrate product SP1 and laser. The strip LB 1. Therefore, the first and second end faces 67a and 67b are formed on the laser bar LB1 in such a manner as to face the mn. By the formation of the end faces, the first and second end faces 67a, 67b can have sufficient flatness to the extent that the laser resonator of the indium nitride semiconductor laser device can be formed, and the vertical 152214.doc -35 - 201140974 Sex. Further, in this method, the formed laser waveguide extends in a direction in which the C-axis of the hexagonal bismuth nitride is inclined. Instead of using a dry etched surface, a resonant mirror end face that provides the laser waveguide is formed. According to this method, a new substrate product SP1 and a laser strip LB1 are formed by cutting the substrate product SP1. In step S107, the separation is performed by pressing, and a plurality of laser strips are produced. This cutting is produced by using the groove 65a shorter than the cut line BREAK of the laser bar LB1. In step S108, a dielectric multilayer film is formed on the end faces 67a, 67b of the laser bar LB1 to form a laser bar product. In step S109, the laser bar product is separated into wafers of respective semiconductor lasers. A semiconductor laser is formed on the wafer for one side of the semiconductor laser. The separation of the laser strip LB1 or the laser strip product is carried out to fabricate a π-lanthanide nitride semiconductor laser element. When the substrate product SP is scored, the position of the scribed groove can be aligned with the separation position on the laser bar when the scribed groove is formed at a pitch equal to the width of the element of the in-line nitride semiconductor laser element. Separating the laser strip LB1 or the product of the laser strip in such a manner that one of the semiconductor lasers is aligned with the side to align the groove, so that the laser stripe can be separated from one side of the semiconductor laser, and The position of the scribed groove (scratch mark) can be separated from the laser stripe. As described above, when the substrate product SP is scribed, the scribed grooves can be formed at a pitch equal to the multiple of the element width of the group III nitride semiconductor laser device. When the scribed groove is formed, for example, at a pitch equal to twice the width of the element, the position of the scribed groove can be positioned at the position where the wafer of the laser bar is separated. The separation of the laser strip LB 1 or the laser strip product is performed in such a manner that either of the sides of the semiconductor 152214.doc -36- 201140974 laser is aligned with the position of the scribed groove. In the manufacturing method of the present embodiment, the angle ALPHA may be in the range of 45 degrees or more and 80 degrees or less and 100 degrees or more and 135 degrees or less. At an angle of less than 45 degrees and more than 135 degrees, the possibility that the end face formed by pressing contains 111 faces becomes high. Moreover, at an angle of more than 80 degrees and less than 1 degree, there is a possibility that the desired flatness and perpendicularity cannot be obtained. Preferably, the angle ALPHA is in the range of 63 degrees or more and 80 degrees or less and 100 degrees or more and 117 degrees or less. A portion of the end face formed by pressing at an angle of less than 45 degrees and more than 135 degrees may have an m-plane. Moreover, at an angle of more than 8 degrees and less than 100 degrees, there is a possibility that the desired flatness and verticality cannot be obtained. The semipolar primary surface 51a may be any one of a {20-21} plane, a {10-11} plane, a {20-2-1} plane, and a {1〇_1_1} plane. Further, the surface which is slightly inclined from the surface of _4 degrees or more and +4 degrees or less is also suitable as the main surface. The typical semi-polar planes provide an end face for the laser resonator with sufficient flatness and perpendicularity to the extent that the laser resonator of the group III nitride semiconductor laser element can be formed. Further, the substrate 51 may include any one of GaN, AIN, AlGaN, InGaN, and InAlGaN. When a substrate including such gallium nitride-based semiconductors is used, an end face which can be used as a laser resonator can be obtained. Preferably, the substrate 51 contains GaN. In the step s104 of forming the substrate product SP, the semiconductor substrate used for crystal growth is subjected to slicing or grinding to have a substrate thickness of 400 μm or less. The first surface 63 b may be formed by grinding. surface. The 152214.doc •37·201140974 substrate thickness can be sufficiently flat, perpendicular or ion-free to form a laser resonator capable of forming the m-type nitride semiconductor laser element with good yield. Damaged end faces 67a, 67b. The first surface 63b is a polishing surface formed by polishing, and it is more preferable that the substrate thickness after polishing is 1 〇〇 μπι or less. Further, in order to process the substrate product Sp relatively easily, the substrate thickness is preferably 50 μm or more. In the method of manufacturing the laser end face of the present embodiment, the angle BETA »the laser bar LB1 described with reference to FIG. 3 is also defined on the laser bar LB1. Preferably, the component of the angle BETA (BETA) is The first plane defined by the c-axis and the m-axis of the group III nitride semiconductor (the surface corresponding to the first plane S1 in the description of FIG. 3) is above (ALPHA-5) (ALPHA+5). The range below the degree. The angular components of the end faces 67a, 67b of the laser strip LB1 with respect to the angle BETA obtained from one of the c-axis and the m-axis to the other satisfy the above-described perpendicularity. Further, it is preferable that the component (BETA) 2 of the angle BETA is in the range of _5 degrees or more and +5 degrees or less in the second plane (the surface corresponding to the second plane S2 shown in FIG. 3). At this time, the end faces 67a and 67b of the laser bar LB1 are attached to the surface perpendicular to the normal axis NX of the semipolar surface 5 1 a with respect to the angle of the predetermined angle BETA satisfying the above-described perpendicularity. The smoothed surfaces 67a and 67b are formed by rupture caused by pressing of a plurality of gallium nitride-based semiconductor layers in which the crystallites grow on the semipolar surface 51a. Due to the epitaxial film on the semipolar plane 51 1 a, the end faces 67a, 67b are not currently used as cleavage planes for the low surface index such as the c-plane, the m-plane, or the a-plane of the spectral mirror. However, when the laminate of the epitaxial film on the semipolar surface 51a is broken, the end faces 67a, 67b have flatness and verticality applicable to the galvanometers. 152214.doc • 38 · 201140974. (Example 1) A semipolar GaN substrate was prepared as described below, and the perpendicularity of the cut surface was observed. The substrate is a (20-21)-plane GaN substrate which is cut at an angle of 75 degrees from the m-axis direction by a thick film grown by the HVPE method (0001). The main surface of the GaN substrate is mirror-finished. After processing, the back surface is subjected to grinding and finishing to a satin state. The thickness of the substrate is 37 〇μπ1. On the back side of the satin state, a diamond pen is used, which is perpendicular to the direction in which the c-axis is projected onto the main surface of the substrate. After the scribing, the substrate was cut and pressed. In order to observe the perpendicularity of the obtained cut surface, the substrate was observed from the a-plane direction using a scanning electron microscope. Fig. 7 (a) is a scanning type in which the cut surface is observed from the a-plane direction. In the electron microscope image, the end surface on the right side is a cut surface. It can be seen that the cut surface has flatness and perpendicularity with respect to the semipolar primary surface. The part (b) of Fig. 7 is a scanning electron microscope image of the surface of the cut surface, and the back surface of the substrate The surface is formed with scratches. The "surface" in the figure indicates the surface of the substrate, and the "back surface" indicates the back surface of the substrate. The thickness of the substrate is 90 μm. Hereinafter, the fracture of the substrate product SP1 in which the groove is formed on the back surface of the substrate is described. Referring to part (a) of Fig. 8, the substrate product spi is supported by the support surface 70a of the support device 70 for cutting. The arrangement direction of the scribed grooves 65a of the substrate product spi coincides with the direction of the concave portion 7〇b. The groove 65 & has side faces 64a, 64b, a bottom face 64c, and a pair of end faces 64d. When the surface of the substrate product SP1 on the support device 7 is pressed by the blade 69, as shown in part (4) of Fig. 9, the substrate product The spi warps, the surface of the epitaxial surface is concave. As shown in Fig. 152214.doc -39- 201140974, in the semiconductor region 53 of the laser structure 55, as shown in the portion of Fig. 8, it is considered that the groove 65a is scribed. The bending moment of the surface layer of the semiconductor region 53 directly under the cut line defined by the arrangement direction is extremely large, and is separated from both sides in the direct downward direction of the self-cutting line (the positive and negative directions of the x-axis) The bending moment is reduced. Preferably, the contact direction of the blade 69 is consistent with the cutting line. At this time, the bending moment is directly below the blade and directly below the cutting line, so that the semiconductor film side can be along It is obtained as shown in part (b) of Fig. 7. The end face of the tan, the laser strip has the above-mentioned end face of high quality as a resonant mirror. Moreover, the laser strip comprises an arrangement of a plurality of semiconductor laser elements, and the quality deviation of the end face of each semiconductor laser element is small. The quality of the surface is stabilized. According to the semiconductor laser and its manufacturing method, the quality of the resonant mirror can be improved. Then, the fracture of the substrate product having the scribed groove formed on the epitaxial surface is explained. The substrate product and the substrate product SP1 is different. When the substrate 69 on the support device 70 is pressed by the blade 69, as shown in part (b) of Fig. 9, the substrate product warps in a direction opposite to the warpage of the substrate product SP1, thereby devitrifying the surface. Become convex. The bending moment of the surface layer of the back surface of the substrate directly below the cutting line defined by the direction in which the grooves 66a are arranged is expressed as a maximum. Part (c) of Fig. 9 shows a laser bar produced by the method shown in part (a) of Fig. 9. The laser strip has scratches 68 that remain on the back side of the substrate. The scratches 68 are located between the reference planes ROP of the light-emitting regions passing through the end faces of the two semiconductor lasers. In order to make the laser strips, the arrangement of the scribed grooves can be formed by the pitch P1 of the width of the semiconductor laser. In this arrangement, as shown in part (4) of Fig. 10, the laser strip 152214.doc • 40- 201140974 LB2 is formed with a scratch SB1 ° at a distance pl between the widths of the semiconductor lasers. When the semiconductor laser element LD1 is formed by separation, as shown in part (b) of FIG. 10, the semiconductor laser LD1 has a scribe mark QB1 at four corners of the bottom surface of the support substrate. At the end of the laser structure, the cut surface CAV1 connects the edge EG1 of the pair of score marks QB1 and the edge EG2 of the second face of the laser structure. The cut-away section CAV1 can be applied to a laser resonator which has particularly excellent flatness and verticality. In order to fabricate the laser strip, the arrangement of the scribed grooves can be formed at a pitch P2 corresponding to twice the width of the semiconductor laser. In this arrangement, as shown in Fig. 11(a), the laser beam LB3 is formed with a score SB2 at a distance of 1 > 2 between the widths of the semiconductor lasers. When the laser strip LB3 is separated to form the semiconductor laser LD2, as shown by the portion of π, the semiconductor laser ld2 has two scribe marks qB2 at one edge of the bottom surface of the supporting substrate. At the crotch portion of the laser structure, the cut surface CAV2 connects the edge EG3 of the score mark QB2 and the edge EG2 of the second face of the laser structure body. Cut section ^8,] can be applied to laser 'white vibrator and has excellent flatness and verticality. In order to fabricate a laser strip, the arrangement of the scribed grooves can be formed at a pitch p2 corresponding to twice the width of the semiconductor laser. Under this arrangement, as shown in part (a) of Figure 2, on the laser strip LB4, what is the width of the semiconductor laser? 2, a score SB3 is formed. When the laser bar LB4 is separated to form the semiconductor laser τ LD3, as shown in part (b) of FIG. 12, the semiconductor laser Lm has a single scribe mark QB 3 on one edge of the bottom surface of the substrate. On the other hand, there is a single score scratch QB3 at f-edge. At the end of the laser structure, the cut surface CAV3 connects the edge EG3 of the scratch mark QB3 and the edge EG2 of the second surface of the laser structure 152214.doc -41· 201140974. The cut-away section CAV3 is suitable for laser resonators and has excellent flatness and verticality. (Example 2) In the first embodiment, a cross section obtained by pressing a scribe line on a GaN substrate having a semipolar {20·21} plane perpendicular to a direction in which the c-axis is projected onto the main surface of the substrate is obtained. It has flatness and straightness with respect to the main surface of the substrate. Therefore, in order to investigate the usefulness of the use of the section as a laser resonator, the laser diode shown in Fig. 13 was grown by the organometallic vapor phase growth method as described below. The raw materials used were trimethylgallium (TMGa), trimethylamine (TMA1), trimethylindium (TMIn), ammonia (NH3), and decane (仏). The substrate 71 is prepared. In the substrate 71, a GaN ingot grown in a thicker manner by the HVPE method is cut out in the m-axis direction at a range of from a width of 〇9 to a range of 〇9 使用 degrees, and a C-axis m-axis direction is produced. The tilt angle ALPHA has a desired tilt angle of the GaN substrate in the range of 〜 to 9 〇 degrees. For example, when the angle is cut at the angle of the degree, the {20-21} plane (^)^ substrate is obtained, and the hexagonal crystal lattice shown in the (&) portion of Fig. 8 is denoted by reference numeral 71a. Then, in order to investigate the density of the laminated defects of the substrate, the substrate is observed by the cathodoluminescence method. When the cathode emits light, the light-emitting process of the carrier excited by the electron beam is observed. If there is a build-up defect, the carrier is non-light-emitting and recombined in the vicinity thereof. Therefore, a dark line is observed. The density (linear density) per unit length of the dark line is determined as the thickness of the laminated defect. Here, a cathodoluminescence method using non-destructive measurement is used to investigate the density of the laminated defect, but it is also possible to use A penetrating electron microscope that destroys the measurement. In a transmission electron microscope, when s is viewed from the a-axis direction, the defect is extended from the substrate to the surface of the sample at m 152214.doc -42 - 201140974. The layer defects contained in the matrix are the same as in the case of the cathodoluminescence method, and the linear density of the buildup defects can be obtained. After the substrate 71 is placed on the crystal holder in the reactor, the following The epitaxial layer is grown in a long-term order, and a semiconductor region is formed on the n-type GaN substrate 71. First, an n-type GaN layer 72 having a thickness of 1000 nm is grown. Then, an n-type In A1 GaN cladding layer 73 having a thickness of 1200 nm is grown. However, after growing the n-type GaN guiding layer 74a having a thickness of 200 nm and the undoped InGaN guiding layer 74b having a thickness of 65 nm, the growth is made of GaN having a thickness of 15 nm and InGaN having a thickness of 3 nm. The period MQW 75. Then, an undoped InGaN guiding layer 76a having a thickness of 65 nm, a p-type AlGaN barrier layer 77 having a thickness of 20 nm, and a p-type GaN guiding layer 76b having a thickness of 200 nm are grown. Then, the growth thickness is a p-type InAlGaN cladding layer 77 of 400 nm. Finally, a p-type GaN contact layer 78 having a thickness of 50 nm is grown. The laser structure is formed by the steps. The insulating film 79 of SiO 2 is formed on the contact layer (Ray After the epitaxial surface of the structure is 78, a stripe hole having a width of 10 μm is formed by photolithography and wet etching. Here, contact holes in the stripe direction are formed in the following two ways. The fringe is (1) the Μ direction (the contact hole is along the predetermined surface defined by the c-axis and the m-axis) Direction), (2) A direction: <11-20> Directions. After the streaking holes are formed, the steaming key includes a Ni/Au ρ side electrode 80a and a Ti/Al pad electrode. Then, a diamond paste was used for polishing on the back surface of the GaN substrate (GaN wafer) to produce a substrate product having a mirror surface on the back surface. At this time, the thickness of the substrate product was measured using a contact type film thickness meter. The measurement 152214.doc -43· 201140974 thickness can also be measured from the sample section by a microscope. The microscope can be an optical microscope or a scanning electron microscope. On the surface (polishing surface) of the GaN substrate (GaN crystal), an n-side electrode 80b containing Ti/Al/Ti/Au is formed by vapor deposition. A laser scriber using a YAG laser with a wavelength of 355 nm is used to fabricate a resonator mirror for these two types of laser stripes. When the laser scribe is used for the rupture, the oscillating wafer yield can be improved as compared with the case of the (4) stone scribe. As a forming condition of the scribed groove, the following conditions can be used: a laser light output of 100 mW; a scanning speed of 5 mm/se, for example, a scribed groove such as a length of 30 μm, a width of 1 〇μηι, and a depth of 4 〇μπι. Slot. The etched groove is formed by directly irradiating the epitaxial surface with laser light at a distance of 800 μm from the opening portion of the insulating film of the substrate. The length of the resonator is set to 6 〇〇 μιη. The field was cut by a doctor blade to make an end face for the spectrum mirror. Here, the scribed grooves are formed in the following two ways. That is, the scribed groove is formed on the side of the film (method for use), and the scribed groove is formed on the back side (method for use). The interval between the grooves is used for the length of the resonator 6 〇〇 μπι. When the scribed groove is formed on the epitaxial surface side (the epitaxial surface side), the back surface of the substrate is pressed (method). When the scribed groove is formed on the back side, the epitaxial surface (semiconductor region side) is pressed (method (Β)). Each of the laser strips is fabricated by causing the substrate product to be broken by such pressing. Regarding the GaN substrate of the {20-21} plane, more specifically, the relationship between the crystal orientation and the cut surface is shown in part (a) of Fig. 14 and the "sha" of the figure. Fig. 14 (a) shows The case where the laser stripe is set in the (1)m direction indicates that the semipolar plane 71a and the end faces 81a and 81b for the laser resonator are provided. The end faces 81a, 152214.doc • 44 - 201140974 81b are substantially the same as the semipolar plane 71a. Orthogonal, but different from the previous c-plane, m-plane, or a-plane, etc. The part (b) of Figure 14 indicates that the laser stripe is set to (2) The <11-20> direction indicates a semipolar surface 71a and end faces 81c and 81d for the laser reader. The end faces 81c and 81d are substantially orthogonal to the semipolar surface 71a and are constituted by the a face. When Method B was used, the cut sections of a plurality of laser strips formed by the fracture were observed by a scanning electron microscope, and it was found that no significant unevenness was observed in each of (1) and (2), and between the laser strips. The deviation is small. Therefore, the formation of the cut section is relatively stable. It can be inferred that the flatness of the cut surface (the size of the unevenness) is 2 〇 nm or less in the region of 1.4×10·8 square meters. Further, the perpendicularity of the cut surface with respect to the surface of the sample is in the range of _5 degrees or more + 5 degrees or less. A dielectric multilayer film is coated on the end face of the laser strip by vacuum evaporation. The dielectric multilayer film is formed by, for example, alternately stacking Si〇2#TiC>2. It is designed such that the film thickness is adjusted in the range of 50 to 1 〇〇 nm, and the center wavelength of the reflectance is in the range of 500 to 530 nm. The reflection surface on one side was set to (7) cycles ^', the design value of the reflectance was designed to be about 95%, the reflection surface on the other side was set to 6 cycles, and the design value of the reflectance was set to be about 8%. ^ Evaluate at room temperature for evaluation. The power supply uses a pulse power supply having a pulse width of 500 ns and a duty ratio of 0.1% to cause the probe to fall on the surface electrode to be energized. When the light output was measured, the light emitted from the laser bar end was detected by the photodiode, and the current-light output characteristic (I-L characteristic) was examined. When the luminescence wavelength is measured, the luminescence from the end face of the laser strip is passed through the optical fiber, and the spectral material is used as a spectral material. In the glare polarization state, the 152214.doc -45· 201140974 is rotated from the light of the laser strip through the polarizing plate to investigate the polarization state. When the LED mode light is observed, the optical fiber is placed on the surface side of the laser bar, thereby measuring the light emitted from the surface. After confirming the polarization state after the oscillation under all the lasers, it was found that the light was polarized in the a-axis direction. The oscillation wavelength is 500 to 530 nm. The polarization state of the LED mode (naturally emitted light) is measured under all lasers. Let the polarization component in the direction of the a-axis be π, the polarization component in the direction in which the m-axis is projected to the principal surface be 12, and (11-12)/(11+12) be defined as the polarization degree P. Thus, the relationship between the polarization degree p obtained by the investigation and the minimum value of the threshold current density is obtained, and Fig. 9 is obtained. As can be seen from Fig. 9, when the degree of polarization is positive, (1) the laser in the direction of the laser stripe Μ has a sharp drop in the threshold current density. That is, it can be seen that when the degree of polarization is positive (11 > 12) ' and the waveguide is provided in the oblique direction, the threshold current density is largely lowered. The information shown in Figure 15 is as follows. Polarization threshold current threshold current (M direction fringe) ( <11-20> Stripe) 0.08 64 20 0.05 18 42 0.15 9 48 0.276 7 52 0.4 6 The relationship between the inclination angle of the c-axis of the GaN substrate in the m-axis direction and the oscillation yield was examined, and then Fig. 16 was obtained. In the present embodiment, the oscillation yield is defined as (the number of oscillating wafers) / (the number of wafers to be measured). Further, Fig. 16 is a diagram showing a substrate having a substrate of 152214.doc • 46 - 201140974 with a layer defect density of 1×104 (cm-丨) or less and a laser stripe of (1) M direction. As can be seen from Fig. 16, when the inclination angle is 45 degrees or less, the vibration yield is extremely low. Observation of the state of the end face by an optical microscope revealed that at an angle of less than 45 degrees, almost all of the wafers exhibited an m-plane, and verticality was not obtained. Further, it can be seen that the inclination angle is in the range of 63 degrees or more and 80 degrees or less, and the perpendicularity is improved, and the oscillation yield is increased to 50% or more. According to such a case, the range of the inclination angle of the GaN substrate is most preferably 63 degrees or more and 80 degrees or less. Further, the same result can be obtained in the range of the angular range of the end face equivalent to the crystal, i.e., 1 〇〇 in the range of 117 degrees or less. The data shown in Figure 16 is as follows. Inclination angle yield A Yield B 10 0.1 0.1 43 0.2 0.2 58 50 48 63 65 68 66 80 89 71 85 96 75 80 87 79 75 79 85 45 48 90 35 31 Yield A is indicated on the facet surface and The value under the method of pressing the back surface of the substrate. The yield B is a value obtained by scribing the back surface of the substrate and pressing the epitaxial surface. The angle is expressed in degrees. 1522H.doc 47· 201140974 Investigating the relationship between the density of laminated defects and the oscillation yield is shown in Figure 17. The definition of the rate of recovery is the same as above. According to Fig. 17, it can be seen that if the laminated defect density exceeds lxl (^(cnT1)', the oscillation yield is drastically lowered. Moreover, when the end surface state is observed by an optical microscope, it is found that the unevenness of the end face is intense in the sample in which the oscillation yield is lowered. A flat cut section is not obtained. It is considered that there is a difference in the difficulty of cutting due to the presence of a build-up defect. Therefore, the density of the build-up defect contained in the substrate must be ixl04 (cm-i) or less. The data shown in Fig. 17 is as follows. Stacked defect density (cm·1) Yield A Yield B 500 80 94 1000 75 91 4000 70 80 8000 65 76 10000 20 36 50000 2 6 Investigate the relationship between substrate thickness and oscillation yield, and obtain good vibration in Figure 18 The definition of the rate is the same as described above, and is depicted in Fig. 18 when the layered defect density of the substrate is 1xlO^cm·1) or less, and the laser stripe is (1) the laser in the x direction. According to Fig. 18, when the substrate thickness is thinner than 1 μm and thicker than 50 μm, the oscillation yield is high. The reason for this is that if the thickness of the substrate is thicker than 100 μm, the perpendicularity of the cut surface is deteriorated. Moreover, the reason is that if it is thinner than 50 μm, the operation is difficult and the wafer is easily broken. For the above reasons, the thickness of the substrate is preferably 5 〇 μηι or more and 1 〇〇 μιη or less. The information shown in Fig. 18 is as follows. 152214.doc •48· 201140974 Substrate Thickness Yield A Yield B 48 10 10 Β0 65 81 90 70 92 110 45 76 150 48 70 200 30 26 400 20 11 (Example 3) In Example 2, 'there is { 20-21} A plurality of crystal films for semiconductor laser growth are grown on the GaN substrate. As described above, the end face for the optical resonator is formed by the formation and pressing of the scribed groove. In order to find that the candidate faces of the equal faces are formed at an angle of about 90 degrees from the (20-21) plane, the plane orientation different from the a plane is calculated by calculation. Referring to Fig. 9, the following angles and plane orientations have an angle of about 90 degrees with respect to the (20-21) plane. The specific surface index is relative to the angle of {20-21} face (•1016): 92.46 degrees (-1017) ·· 90.10 degrees (-1018): 88.29 degrees Figure 20 shows the (20-21) face and (_101_6) The pattern of the atomic configuration of the surface and the surface of the surface. Fig. 21 is a view showing the atomic arrangement of the (20-21) plane and the (_1〇1·7) plane and the (_1〇17) plane. Fig. 22 is a view showing the atomic arrangement of the (2〇_21) plane and the (401-8) plane and the (1018) plane. As shown in Fig. 2〇 to the figure, the atomic configuration of the arrow indicates that the atomic arrangement of the atom is neutral, and 152214.doc •49-201140974 periodically presents an electrically neutral atomic configuration. The reason why the growth surface is relatively perpendicular is likely to be that the atomic arrangement of the charge is periodically generated, so that the generation of the fracture surface becomes relatively stable. By including the various experiments of the above Examples 1 to 3, the angle ALPHA can be in the range of 45 degrees or more and 80 degrees or less and 1 degree or more and 135 degrees or less. In order to improve the oscillating wafer yield, the angle ALPHA can be in the range of 63 degrees or more and 80 degrees or less and 100 degrees or more and 117 degrees or less. A typical semi-polar major surface can be any of {2〇_ 21} plane, { 10-11} plane, {20-2-1} plane, and {1〇_卜1} plane. Further, it may be a slightly inclined surface that deviates from the semipolar surfaces. For example, the semi-polar main surface may be inclined from the {20-21} plane, the {10-11} plane, the {20_2_1} plane, and the {10-1-1} plane to the 〇! plane direction _4 degrees A slightly inclined surface with a range of +4 degrees or less above. In the above preferred embodiments, the present invention has been described with reference to the drawings, and the invention may be modified in the details and details without departing from the scope of the invention. The present invention is not limited to the specific configuration disclosed in the embodiment. Therefore, all amendments and changes to patent claims are made for the scope of the patent application and the scope of its spirit. INDUSTRIAL APPLICABILITY As described above, according to the present embodiment, it is possible to provide a semipolar surface of a support substrate which is inclined in the c-axis m-axis direction of the hexagonal III-nitride nitride and has a representation for A group III nitride semiconductor laser device of a laser resonator of high quality and capable of realizing a low threshold current, and according to this embodiment, a method of fabricating the quasar nitride semiconductor laser device can be provided. [Brief Description of the Drawings] Fig. 1 is a view schematically showing the structure of a π-type group nitride semiconductor laser device of the present embodiment.

圖2(a)、（b)係表示ΙΠ族氮化物半導體雷射元件之活性層 的能帶構造之圖式D 圖3(a)、（b)係表示in族氮化物半導體雷射元件之活性層 之發光的偏光之圖式。 圖4係表示m族氮化物半導體雷射元件之端面與活性層 之m面的關係之圖式。 圖5係表示製作本實施形態之m族氮化物半導體雷射元 件之方法的主要步驟之步驟流程圖。 圖6⑷〜⑷係示意性表示製作本實施形‘態之III族氮化物 半導體雷射元件之方法的主要步驟之圖式。 圖7(a)、（b)係表示諧振器端面之掃描型電子顯微鏡像以 及割斷面上之刻劃痕的圖式。 圖8(a)、（b)係表示用於割 板產物及其彎曲力矩之分佈 斷之支持裝置上對準到 的圖式。 圖9(a)〜(c)係示意性地表 板產物之圖式。 示支持裝置上正進行割 刀之基 斷之基 痕槽之間距與半_射之刻劃 之刻劃 之刻劃 圖11⑷、(b)係表示刻劃槽之間距與半導體雷射 的關係之另一例之圖式。 圖12(a)、（b)係表示刻劃槽之間距與半導體雷射 152214.doc •51 - 201140974 痕的關係的又一例之圖式。 圖丨3係表示實施例1所示之雷射二極體之構造的圖式。 圖14(a)、（b)係表示晶格之（20-21}面、且表示用於諧振 器之a面端面的圖式。 圖15係表示求得之偏光度p與閾值電流密度之關係的圖 式。 圖16係表示GaN基板之c軸朝向⑺軸方向之傾斜角與振盪 良率的關係之圖式。 圖丨7係表示積層缺陷密度與振盪良率之關係之圖式。 圖18係表示基板厚度與振盪良率之關係之圖式。 圖19係表示（20-21)面與另一面方位（指數）所成之角度之 圖式。 圖20係表示（20-21)面與（_101_6)面及卜1〇16)面之原子配 置之圖式。 圖21係表示（2〇·21)面與（_101_7)面及（_1〇17)面之原子配 置之圖式。 圖22係表示（20-21)面與（_1〇1_8)面及卜1〇18)面之原子配 置之圖式。 【主要元件符號說明】 10a 雷射刻劃器 11 III族氮化物半導體雷射元件 13 雷射構造體 13a 第1面 13b 第2面 152214.doc -52· 201140974 13c 、13d 邊緣 15 電極 17 支持基體 17a 半極性主面 17b 支持基體背面 17c 支持基體端面 19 半導體區域 19a 半導體區域表面 19c 半導體區域端面 21 第1包覆層 23 第2包覆層 25 活性層 25a 井層 25b 障壁層 27 ' 29 割斷面 30、 32 凹部 30a 末端 30b 側緣 31 絕緣膜 31a 絕緣膜開口 33 接觸層 35 η側導光層 35a (η側導光層之）第1部分 35b (η側導光層之）第2部分 152214.doc •53· 201140974 37 37a 37b 39 41 43a 、 43b 51 51a 53 54 54a 55 57 58a 58b 59 61 63a 63b 65a 、 65b 67a 、 67b 、 81a 、 81b 、 81c 、 81d 69 69a p側導光層 (P側導光層之）第1部分 (P側導光層之）第2部分 載體阻擋層 電極 介電質多層膜 基板 半極性主面 半導體區域 絕緣膜 絕緣膜開口 雷射構造體 氮化鎵系半導體區域 陽極電極 陰極電極 發光層 氮化鎵系半導體區域 第1面 第2面 刻劃槽 端面 刮刀 邊緣 152214.doc 54- 201140974 69b 、 69c 刮刀面 71 支持裝置 71a 支持面 71b 凹部 72 η型GaN層 73 η型InAlGaN包覆層 74a η型GaN導引層 74b 無摻雜InGaN導引層 75 3週期MQW 76a 無摻雜InGaN導引層 76b p型GaN導引層 78 p型GaN接觸層 79 絕緣膜 80a p側電極 80b η側電極 ALPHA 角度 a-n、m-n 面 BETA 角度 CR 結晶座標系 DSUB 支持基體厚度 Fa 參照面 11、12 偏光成分 LB 雷射光束 LB1 雷射條 152214.doc -55- 201140974 ΜΑ m軸向量 NX 法線軸 Sc c面 SP 基板產物 SP1 基板產物 152214.doc ·56·2(a) and 2(b) are diagrams showing the energy band structure of the active layer of the lanthanide nitride semiconductor laser device. Figs. 3(a) and 3(b) show the indium nitride semiconductor laser device. A pattern of polarization of the luminescence of the active layer. Fig. 4 is a view showing the relationship between the end faces of the group m nitride semiconductor laser device and the m-plane of the active layer. Fig. 5 is a flow chart showing the steps of the main steps of the method of fabricating the m-nitride semiconductor laser device of the present embodiment. 6(4) to (4) are diagrams schematically showing the main steps of a method of fabricating a Group III nitride semiconductor laser device of the present embodiment. Fig. 7 (a) and (b) are views showing a scanning electron microscope image of the end face of the resonator and scratches on the cut surface. Figures 8(a) and (b) show the alignment of the support device for the distribution of the cutting product and its bending moment. Figures 9(a) to (c) are schematic representations of the surface products. The scribes of the distance between the base mark grooves and the scribes of the half-shots on the support device are shown in Fig. 11 (4), and (b) shows the relationship between the distance between the grooves and the semiconductor laser. Another example of the schema. Figures 12(a) and (b) are diagrams showing still another example of the relationship between the scribed grooves and the semiconductor laser 152214.doc • 51 - 201140974. Fig. 3 is a view showing the structure of the laser diode shown in the first embodiment. 14(a) and 14(b) are diagrams showing the (20-21} plane of the crystal lattice and showing the end surface of the a-plane for the resonator. Fig. 15 shows the obtained polarization degree p and the threshold current density. Fig. 16 is a view showing the relationship between the inclination angle of the c-axis direction of the GaN substrate in the (7)-axis direction and the oscillation yield. Fig. 7 is a diagram showing the relationship between the laminated defect density and the oscillation yield. Fig. 19 is a diagram showing the relationship between the thickness of the substrate and the oscillation yield. Fig. 19 is a diagram showing the angle formed by the (20-21) plane and the other plane orientation (index). Fig. 20 shows the (20-21) plane. A pattern of atomic configurations with (_101_6) faces and pads 1〇16). Fig. 21 is a view showing the arrangement of atoms of the (2〇·21) plane and the (_101_7) plane and the (_1〇17) plane. Fig. 22 is a view showing the atomic arrangement of the (20-21) plane and the (_1〇1_8) plane and the Bu 1〇18) plane. [Description of main component symbols] 10a Laser scriber 11 Group III nitride semiconductor laser element 13 Laser structure 13a First surface 13b Second surface 152214.doc -52· 201140974 13c, 13d Edge 15 Electrode 17 Support substrate 17a Semi-polar main surface 17b Support base back surface 17c Support base end surface 19 Semiconductor region 19a Semiconductor region surface 19c Semiconductor region end surface 21 First cladding layer 23 Second cladding layer 25 Active layer 25a Well layer 25b Barrier layer 27 ' 29 Section 30, 32 recess 30a end 30b side edge 31 insulating film 31a insulating film opening 33 contact layer 35 n-side light guiding layer 35a (n-side light guiding layer) first portion 35b (n-side light guiding layer) second portion 152214 .doc •53· 201140974 37 37a 37b 39 41 43a , 43b 51 51a 53 54 54a 55 57 58a 58b 59 61 63a 63b 65a , 65b 67a , 67b , 81a , 81b , 81c , 81d 69 69a p side light guide (P Part 1 of the side light guiding layer (of the P side light guiding layer) Part 2 carrier barrier layer dielectric dielectric multilayer film substrate semipolar main surface semiconductor region insulating film insulating film Port laser structure GaN gallium semiconductor region anode electrode cathode electrode light-emitting layer gallium nitride-based semiconductor region first surface second surface scribed groove end face scraper edge 152214.doc 54- 201140974 69b, 69c scraper surface 71 support device 71a Support surface 71b recess 72 n-type GaN layer 73 n-type InAlGaN cladding layer 74a n-type GaN guiding layer 74b undoped InGaN guiding layer 75 3-period MQW 76a undoped InGaN guiding layer 76b p-type GaN guiding layer 78 p-type GaN contact layer 79 insulating film 80a p-side electrode 80b η side electrode ALPHA angle an, mn surface BETA angle CR crystal coordinate system DSUB support substrate thickness Fa reference surface 11, 12 polarized component LB laser beam LB1 laser bar 152214 .doc -55- 201140974 ΜΑ m-axis vector NX normal axis Sc c-plane SP substrate product SP1 substrate product 152214.doc ·56·

Claims (1)

201140974 七、申請專利範圍： 1. 一種ΠΙ族氮化物半導體雷射元件，其包括： 雷射構造體，其包含含有六方晶.系m族氮化物半導體 且具有半極性主面的支持基體、及設於上述支持基體之 上述半極性主面上的半導體區域；以及 電極，其没於上述雷射構造體之上述半導體區域上； 上述半導體區域包含含有第丨導電型氮化鎵系半導體 之第1包覆層、含有第2導電型氮化鎵系半導體之第2包 覆層、及設於上述第1包覆層與上述第2包覆層之間的活 性層， 上述第1包覆層、上述第2包覆層及上述活性層係沿上 述半極性主面之法線軸排列， 上述活性層包含氮化鎵系半導體層， 上述支持基體之上述六方晶系III族氣化物半導體之c 軸係相對於上述法線軸而向上述六方晶系ΠΙ族氮化物半 導體之m軸的方向以有限之角度ALPHA傾斜，上述角度 ALPHA係於45度以上80度以下或100度以上135度以下之 範圍， 上述雷射構造體包含與由上述六方晶系III族氮化物半 導體之m軸及上述法線轴所規定的m-n面交叉之第1及第2 割斷面， 該III族氮化物半導體雷射元件之雷射諧振器包含上述 第1及第2割斷面， 上述雷射構造體包含第1及第2面，上述第1面係上述 152214.doc 201140974 第2面之相反側之面， 上述半導體區域位於上述第2面與上述支持基體之 間， 上述第1及第2割斷面分別自上述第1面之邊緣延伸至 上述第2面之邊緣， 上述雷射構造體之上述支持基體於上述第1割斷面具 有設於上述第1面之上述邊緣之一部分的凹部，該凹部 自上述支持基體之背面延伸，且該凹部之末端與上述雷 射構造體之上述第2面之邊緣相隔。 2. 如請求項1之III族氮化物半導體雷射元件，其中 於上述第1及第2割斷面各自呈現上述支持基體之端面 及上述半導體區域之端面， 上述半導體區域之上述活性層的端面與正交於含有上 述六方晶系氮化物半導體之支持基體之m軸的基準面所 成角度，係於由上述III族氮化物半導體之c軸及m軸所規 定之第1平面上成（ALPHA-5)度以上（ALPHA+5)度以下之 範圍的角度。 3. 如請求項2之III族氮化物半導體雷射元件，其中 上述角度係於與上述第1平面及上述法線軸正交之第2 平面上介於-5度以上+5度以下之範圍。 4. 如請求項1至3中任一項之III族氮化物半導體雷射元件， 其中 上述支持基體之厚度為400 μιη以下。 5.如請求項1至4中任一項之III族氮化物半導體雷射元件， 1522I4.doc 201140974 其中 上述支持基體之厚度為50 μηι以上10 0 μιη以下。 6·如請求項4或5之III族氮化物半導體雷射元件，其中 上述雷射構造體之上述凹部及於上述半導體區域。 7_如請求項1至6中任一項之ΙΠ族氮化物半導體雷射元件， 其中 上述法線軸與上述六方晶系m族氮化物半導體之c軸 所成角度係於63度以上80度以下或1〇〇度以上in度以下 之範圍。 8. 如請求項1至7中任一項之in族氮化物半導體雷射元件， 其中 來自上述活性層之雷射光向上述六方晶系m族氮化物 半導體之a軸的方向偏光。 9. 如請求項1至8中任一項之in族氮化物半導體雷射元件， 其中 該III族氮化物半導體雷射元件之led模式下之光於上 述六方晶系III族氮化物半導體之a軸之方向包含偏光成 分II、並於將上述六方晶系ΠΙ族氮化物半導體之e轴投影 至主面之方向包含偏光成分12，且 上述偏光成分II大於上述偏光成分12。 10. 如請求項1至9中任一項之III族氮化物半導體雷射元件， 其中 上述半極性主面係自{20-21}面、{1〇_11}面、{2〇_2_1} 面、及{10-1-1}面中之任一者偏離-4度以上+4度以下之 152214.doc 201140974 11. 12. 13. 14. 15. 16. 範圍的微傾斜面。 如請求们至1()中任-項之ΙΠ族氮化物半導體雷射元 件’其中 上述半極性主面係{20-21}面、{1(Ml}面、{2〇21} 面、及{1〇_1_1}面中之任一者。 如請求項an中任一項之_氮化物半導體雷射元 件，其中 上述支持基體之積層缺陷密度為1X104 cnrl以下。 如請求項1至12中任一項之in族氮化物半導體雷射元 件，其中 上述支持基體包含GaN、AlGaN、AIN、InGaN及 InAlGaN中之任一者。 如請求項1至13中任一項之in族氮化物半導體雷射元 件，其中 進而包含設於上述第1及第2割斷面中至少一者之介電 質多層膜。 如請求項1至14中任一項之πΐ族氮化物半導體雷射元 件，其中 上述活性層包含以產生波長為360 nm以上600 nm以下 之光之方式而設的發光區域。 如請求項1至15中任一項之in族氮化物半導體雷射元 件，其中 上述活性層包含以產生波長為430 nm以上5 50 nm以下 之光之方式而設的量子井構造。 152214.doc 201140974 17. 如請求項1至16中任一項之m族氮化物半導體雷射元 件，其中 上述雷射構造體具有用於該m族氮化物半導體雷射元 件之一對側面， 上述凹部位於上述一對側面之上述一端。 18. 如請求項17之III族氮化物半導體雷射元件，其中 上述雷射構造體具有用於該⑴族氮化物半導體雷射元 件之一對側面， 上述凹部位於上述一對側面之上述一端， 上述雷射構造體之上述支持基體具有與上述凹部相隔 之另一凹部，該另一凹部自上述支持基體之背面延伸， 該另一凹部於上述第1割斷面上設於上述第1面的上述邊 緣之一部分，該另一凹部之末端與上述半導體區域之上 述第2面相隔。 19. 一種製作in族氮化物半導體雷射元件之方法，其包括如 下步驟： 準備含六方晶系III族氮化物半導體且具有半極性主面 之基板； 形成具有雷射構造體、陽極電極及陰極電極之基板產 物’該雷射構造體包含形成於上述半極性主面上之半導 體區域與上述基板； 於上述六方晶系III族氮化物半導體之a轴之方向，將 上述基板產物之第1面作局部刻劃；以及 藉由對上述基板產物之第2面之按壓而進行上述基板 152214.doc 201140974 產物之分離，形成另一基板產物及雷射條； 上述第1面係上述第2面之相反側之面， 上述半導體區域位於上述第2面與上述基板之間， 上述雷射條具有自上述第1面延伸至上述第2面且藉由 上述分離而形成之第1及第2端面， 上述第1及第2端面構成該III族氮化物半導體雷射元件 之雷射諧振器， 上述陽極電極及陰極電極形成於上述雷射構造體上， 上述半導體區域包含含有第1導電型氮化鎵系半導體 之第1包覆層、含有第2導電型氮化鎵系半導體之第2包 覆層、以及設於上述第1包覆層與上述第2包覆層之間的 活性層， 上述第1包覆層、上述第2包覆層及上述活性層係沿上 述半極性主面之法線軸排列， 上述活性層含有氮化鎵系半導體層， 上述基板之上述六方晶系III族氮化物半導體之C軸係 相對於上述法線軸而向上述六方晶系III族氮化物半導體 的m軸之方向以有限的角度ALPHA傾斜， 上述角度ALPHA係於45度以上80度以下或100度以上 135度以下之範圍， 上述第1及第2端面與由上述六方晶系ΠΙ族氮化物半導 體之m轴及上述法線轴所規定之m-n面交又。 20.如請求項19之製作III族氮化物半導體雷射元件之方法， 其中 152214.doc 201140974 上述第1及第2端面各自之上述活性層之端面，相對於 與含上述六方晶系氮化物半導體之支持基體的m轴正交 之基準面，於由上述六方晶系m族氮化物半導體之c軸 及m軸所規定之平面係成（ALpHA-5)度以上（ALPHA+5) 度以下之範圍的角度。 21. 如請求項19或20之製作in族氮化物半導體雷射元件之方 法，其中 上述角度ALPHA係於63度以上80度以下或100度以上 117度以下之範圍。 22. 如請求項19至21中任一項之製作川族氮化物半導體雷射 元件之方法，其中 於形成上述基板產物之上述步驟中，上述基板被施以 切片或研削加工’使上述基板之厚度成為4〇〇 μπι以下， 上述第1面係藉由上述加工而形成之加工面、或係包 含上述加工面之上所形成的電極之面。 23. 如請求項19至22中任一項之製作ill族氮化物半導體雷射 元件之方法，其中 於形成上述基板產物之上述步驟令，上述基板經研磨 而使上述基板之厚度成為50 μιη以上1 〇 〇 μπι以下， 上述第1面係藉由上述研磨而形成之研磨面、或係包 含上述研磨面之上所形成的電極之面。 24. 如請求項19至23中任一項之製作III族氮化物半導體雷射 元件之方法，其中 上述雷射構造體之上述刻劃槽及於上述半導體區域。 152214.doc .7- 201140974 25. 如請求項19至24中任一項之製作III族氮化物半導體雷射 元件之方法，其中 上述刻劃係使用雷射刻劃器而進行， 藉由上述刻劃而形成刻劃槽，上述刻劃槽之長度係短 於由上述六方晶系III族氮化物半導體之a軸及上述法線 軸所規定的a-n面與上述第1面之交叉線的長度。 26. 如請求項丨9至25中任一項之製作III族氮化物半導體雷射 元件之方法，其中 上述半極性主面係{20-21}面、{10-11}面、{20-2-1} 面、及{10-1-1}面中之任一者。 27·如請求項19至26中任一項之製作III族氮化物半導體雷射 元件之方法，其中 上述基板包含 GaN、AlGaN、AIN、InGaN及 InAlGaN 中之任一者。 28. 如請求項19至27中任一項之製作III族氮化物半導體雷射 元件之方法，其中 於刻劃上述基板產物之步驟中，以與上述III族氮化物 半導體雷射元件之元件寬度相等之間距形成刻劃槽，且 該方法中進而包括進行上述雷射條之分離而製作III族 氮化物半導體雷射元件之步驟， 上述III族氮化物半導體雷射元件之上述雷射構造體具 有用於該III族氮化物半導體雷射元件之一對側面。 29. 如請求項19至27中任一項之製作III族氮化物半導體雷射 元件之方法，其中 152214.doc 201140974 於刻劃上述基板產物之步驟中，以與上述ΙΠ族氮化物 半導體雷射元件之元件寬度之複數倍等值的間距形成刻 劃槽，且 該方法中進而包括進行上述雷射條之分離而製作爪族 氮化物半導體雷射元件之步驟， 上述III族氮化物半導體雷射元件之上述雷射構造體具 有用於該III族氮化物半導體雷射元件之一對側面。 30. —種III族氮化物半導體雷射元件，其包括： 雷射構造體，其包含含有六方晶系III族氮化物半導體 且具有半極性主面及背面之支持基體、及設於上述支持 基體之上述半極性主面上之半導體區域；以及 電極，其設於上述雷射構造體之上述半導體區域上； 上述半導體區域包含第1導電型包覆層、第2導電型包 覆層及設於上述第1包覆層與上述第2包覆層之間的活性 層，上述第1導電型包覆層、上述第2導電型包覆層及上 述活性層係沿上述半極性主面之法線軸而排列， 上述支持基體之上述六方晶系ΠΙ族氮化物半導體之c 軸係相對於上述法線軸而向上述六方晶系ΠΙ族氮化物半 導體之m軸的方向以角度ALPHA傾斜，上述角度ALPHA 係於45度以上80度以下或1〇〇度以上135度以下之範圍， 上述雷射構造體包含第1及第2面，上述第1面係上述 第2面之相反側之面，上述半導體區域位於上述第2面與 上述支持基體之間， 上述雷射構造體之上述支持基體於上述雷射構造體之 152214.doc -9- 201140974 端部具有分別設於上述第1面之邊緣的一端及另一端之 第1及第2刻劃痕，上述第1及第2刻劃痕係沿由上述法線 軸與上述六方晶系III族氮化物半導體之a轴所規定的平 面而延伸’上述第1及第2刻劃痕係自上述支持基體之上 述背面延伸， 上述雷射構造體之上述端部具有將上述第1及第2刻劃 痕之上述邊緣及上述雷射構造體之上述第2面之上述邊 緣連接的割斷面， 該III族氮化物半導體雷射元件之雷射諧振器包含上述 割斷面。 3 1 · —種製作III族氮化物半導體雷射元件之方法，其包括如 下步驟： 由六方晶系III族氮化物半導體形成具有雷射構造體、 陽極電極及陰極電極之基板產物，該雷射構造體包含基 板及形成於上述基板之半極性主面上之半導體區域，該 陽極電極及陰極電極形成於上述雷射構造體上； 刻劃上述基板產物之第1面，形成複數個刻劃槽之排 列；以及 藉由對上述基板產物之第1面之按壓而進行上述基板 產物之分離’形成另一基板產物及雷射條； 上述基板之上述六方晶系III族氮化物半導體之C軸係 相對於上述法線轴而向上述六方晶系ΙΠ族氮化物半導體 的m軸之方向以有限的角度ALPHA傾斜，上述角度 ALPHA係於45度以上80度以下或1〇〇度以上135度以下之 152214.doc -10· 201140974 範圍， 上述半導體區域包含第！導電型包覆層、第2導電型包 覆層、及設於上述第咜覆層與上述第2包覆層之間的活 I·生層上述第1導電型包覆層、上述第2導電型包覆層及 上述活性層係沿上述半極性主面之法線軸而排列， 上述第1面係上述第2面之相反侧之面， 上述半導體區域位於上述第2面與上述基板之間， 上述刻劃槽各自沿由上述六方晶系m族氮化物半導體 之a軸與上述法線轴所規定之平面延伸， 上述雷射條具有藉由上述分離而形成之第i及第2端 面， 上述第1及第2端面構成該III族氮化物半導體雷射元之 雷射諧振器。 152214.doc -11 -201140974 VII. Patent application scope: 1. A bismuth nitride semiconductor laser device, comprising: a laser structure comprising a support substrate having a hexagonal crystal group m-nitride semiconductor and having a semipolar main surface, and a semiconductor region provided on the semipolar primary surface of the support substrate; and an electrode not included in the semiconductor region of the laser structure; wherein the semiconductor region includes a first region containing a second conductivity type gallium nitride semiconductor a coating layer, a second cladding layer containing a second conductivity type gallium nitride based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer, the first cladding layer, The second cladding layer and the active layer are arranged along a normal axis of the semipolar primary surface, the active layer includes a gallium nitride based semiconductor layer, and the c-axis system of the hexagonal III-based vapor semiconductor of the support substrate The direction toward the m-axis of the hexagonal bismuth nitride semiconductor is inclined at a limited angle ALPHA with respect to the normal axis, and the angle ALPHA is 45 degrees or more and 80 degrees or less or 10 a range of 0 degrees or more and 135 degrees or less, wherein the laser structure includes first and second cut planes intersecting with a mn plane defined by an m-axis of the hexagonal III-nitride semiconductor and the normal axis; The laser resonator of the III-nitride semiconductor laser device includes the first and second fractured sections, wherein the laser structure includes first and second faces, and the first face is 152214.doc 201140974 second face a surface of the opposite side, wherein the semiconductor region is located between the second surface and the support base, and the first and second fractured surfaces extend from an edge of the first surface to an edge of the second surface, and the laser structure The support base has a recess provided in one of the edges of the first surface in the first cut surface, the recess extends from a rear surface of the support base, and an end of the recess and the second portion of the laser structure The edges of the faces are separated. 2. The group III nitride semiconductor laser device according to claim 1, wherein each of the first and second fractured faces has an end surface of the support substrate and an end surface of the semiconductor region, and an end surface of the active layer of the semiconductor region is The angle formed by the reference plane orthogonal to the m-axis of the support substrate containing the hexagonal nitride semiconductor is formed on the first plane defined by the c-axis and the m-axis of the group III nitride semiconductor (ALPHA- 5) The angle of the range below (ALPHA+5) degrees. 3. The group III nitride semiconductor laser device according to claim 2, wherein the angle is in a range of -5 degrees or more + 5 degrees or less on a second plane orthogonal to the first plane and the normal axis. 4. The group III nitride semiconductor laser device according to any one of claims 1 to 3, wherein the support substrate has a thickness of 400 μm or less. 5. The group III nitride semiconductor laser device according to any one of claims 1 to 4, wherein the thickness of the support substrate is 50 μηη or more and 10 0 μηη or less. 6. The group III nitride semiconductor laser device according to claim 4 or 5, wherein said concave portion of said laser structure is in said semiconductor region. The bismuth nitride semiconductor laser device according to any one of claims 1 to 6, wherein the normal axis and the c-axis of the hexagonal m-type nitride semiconductor are at an angle of not less than 63 degrees and not more than 80 degrees. Or a range of less than 1 degree below in degrees. 8. The indium nitride semiconductor laser device according to any one of claims 1 to 7, wherein the laser light from the active layer is polarized in the direction of the a-axis of the hexagonal m-type nitride semiconductor. 9. The indium nitride semiconductor laser device according to any one of claims 1 to 8, wherein the light in the LED mode of the group III nitride semiconductor laser device is in the hexagonal group III nitride semiconductor The direction of the axis includes the polarizing component II, and the polarizing component 12 is included in a direction in which the e-axis of the hexagonal bismuth nitride semiconductor is projected onto the principal surface, and the polarizing component II is larger than the polarizing component 12. 10. The group III nitride semiconductor laser device according to any one of claims 1 to 9, wherein the semipolar principal surface is from {20-21} plane, {1〇_11} plane, {2〇_2_1 } Face, and any of the {10-1-1} faces deviate from -4 degrees to +4 degrees below 152214.doc 201140974 11. 12. 13. 14. 15. 16. The range of micro-inclined faces. The steroidal nitride semiconductor laser element of the ninth-first aspect of the present invention, wherein the semi-polar principal surface {20-21} plane, the {1 (Ml} plane, the {2〇21} plane, and Any one of the {1〇_1_1} faces. A nitride semiconductor laser element according to any one of claims, wherein the support substrate has a laminate defect density of 1×104 cnrl or less. As in claims 1 to 12. Any one of the indium nitride semiconductor laser elements, wherein the support substrate comprises any one of GaN, AlGaN, AIN, InGaN, and InAlGaN. The indium nitride semiconductor of any one of claims 1 to 13 Further, the element further comprising a dielectric multilayer film provided in at least one of the first and second fractured cross sections, wherein the π bismuth nitride semiconductor laser element according to any one of claims 1 to 14, wherein the activity The layer includes a light-emitting region of a light source of a wavelength of 360 nm or more and 600 nm or less. The indium nitride semiconductor laser device according to any one of claims 1 to 15, wherein the active layer is included to generate a wavelength Quantum well structure for 430 nm and above 5 50 nm light The group m nitride semiconductor laser element of any one of claims 1 to 16, wherein the above-described laser structure has one side pair for the group m nitride semiconductor laser element, The recessed portion is located at the one end of the pair of side faces. 18. The group III nitride semiconductor laser device of claim 17, wherein the laser structure has one side pair for the (1) group nitride semiconductor laser device, The concave portion is located at the one end of the pair of side surfaces, and the support base of the laser structure has another recess separated from the recess, the other recess extends from a rear surface of the support base, and the other recess is in the first One end of the edge of the first surface is provided on the cut surface, and the end of the other recess is spaced apart from the second surface of the semiconductor region. 19. A method of fabricating an in-situ nitride semiconductor laser device, comprising the following Step: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a laser structure, an anode And a substrate product of the cathode electrode, wherein the laser structure includes a semiconductor region formed on the semipolar primary surface and the substrate; and the substrate product is in the direction of the a-axis of the hexagonal III-nitride semiconductor 1 surface is partially scribed; and the substrate 152214.doc 201140974 product is separated by pressing the second surface of the substrate product to form another substrate product and a laser strip; the first surface is the second a surface of the opposite side of the surface, wherein the semiconductor region is located between the second surface and the substrate, and the laser strip has first and second portions formed by extending from the first surface to the second surface and separated by the separation The end surface, the first and second end faces constitute a laser resonator of the group III nitride semiconductor laser device, wherein the anode electrode and the cathode electrode are formed on the laser structure, and the semiconductor region includes a first conductivity type nitrogen a first cladding layer of the gallium-based semiconductor, a second cladding layer containing the second conductivity type gallium nitride-based semiconductor, and the first cladding layer and the second cladding layer In the active layer, the first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis of the semipolar primary surface, and the active layer includes a gallium nitride based semiconductor layer, and the substrate is The C-axis of the hexagonal III-nitride semiconductor is inclined at a finite angle ALPHA toward the m-axis of the hexagonal III-nitride semiconductor with respect to the normal axis, and the angle ALPHA is 45 degrees or more and 80 degrees. Hereinafter, in the range of 100 degrees or more and 135 degrees or less, the first and second end faces are overlapped with the mn plane defined by the m-axis of the hexagonal bismuth nitride semiconductor and the normal axis. 20. The method of fabricating a group III nitride semiconductor laser device according to claim 19, wherein: 152214.doc 201140974, an end surface of each of said first and second end faces of said active layer, with respect to and containing said hexagonal nitride semiconductor The reference plane orthogonal to the m-axis of the support substrate is equal to or less than (ALPHA+5) degrees (ALPHA+5) degrees defined by the c-axis and the m-axis of the hexagonal m-type nitride semiconductor. The angle of the range. 21. The method of fabricating an in-situ nitride semiconductor laser device according to claim 19 or 20, wherein the angle ALPHA is in a range of 63 degrees or more and 80 degrees or less or 100 degrees or more and 117 degrees or less. The method of producing a Kawasaki nitride semiconductor laser device according to any one of claims 19 to 21, wherein in the step of forming the substrate product, the substrate is subjected to slicing or grinding to make the substrate The thickness is 4 μm or less, and the first surface is a processed surface formed by the above processing or a surface including an electrode formed on the processed surface. The method of producing a ll-nitride semiconductor laser device according to any one of claims 19 to 22, wherein in the step of forming the substrate product, the substrate is ground to have a thickness of the substrate of 50 μm or more 1 〇〇μπι or less, the first surface is a polishing surface formed by the polishing, or a surface including an electrode formed on the polishing surface. The method of fabricating a group III nitride semiconductor laser device according to any one of claims 19 to 23, wherein said scribed groove of said laser structure is in said semiconductor region. The method of fabricating a Group III nitride semiconductor laser device according to any one of claims 19 to 24, wherein the scoring is performed using a laser scriber by the above engraving The scribed groove is formed to be shorter than the length of the line intersecting the a-axis defined by the a-axis of the hexagonal III-nitride semiconductor and the normal axis and the first surface. 26. The method of claim 1, wherein the semi-polar major surface is {20-21} plane, {10-11} plane, {20- 2-1} Face, and any of the {10-1-1} faces. The method of fabricating a group III nitride semiconductor laser device according to any one of claims 19 to 26, wherein the substrate comprises any one of GaN, AlGaN, AIN, InGaN, and InAlGaN. The method of fabricating a group III nitride semiconductor laser device according to any one of claims 19 to 27, wherein in the step of scribing the substrate product, the element width of the group III nitride semiconductor laser device is Forming a scribed groove at equal intervals, and the method further includes the step of fabricating the group III nitride semiconductor laser device by performing the separation of the laser strip, wherein the laser structure of the group III nitride semiconductor laser device has Used for one side of the group III nitride semiconductor laser element. 29. The method of fabricating a group III nitride semiconductor laser device according to any one of claims 19 to 27, wherein 152214.doc 201140974 is used in the step of scribing the substrate product to perform laser irradiation with the above-described bismuth nitride semiconductor The plurality of equivalent pitches of the element widths of the elements form a scribed groove, and the method further includes the step of fabricating the claw-type nitride semiconductor laser elements by performing the separation of the laser strips, the III-nitride semiconductor laser The above-described laser structure of the element has a pair of side faces for the group III nitride semiconductor laser element. 30. A Group III nitride semiconductor laser device, comprising: a laser structure comprising a support matrix comprising a hexagonal Group III nitride semiconductor and having a semipolar primary surface and a back surface, and a support substrate provided thereon a semiconductor region on the semipolar primary surface; and an electrode provided on the semiconductor region of the laser structure; wherein the semiconductor region includes a first conductive type cladding layer, a second conductive type cladding layer, and An active layer between the first cladding layer and the second cladding layer, wherein the first conductive type cladding layer, the second conductive type cladding layer, and the active layer are along a normal axis of the semipolar primary surface And arranging, the c-axis of the hexagonal lanthanide nitride semiconductor of the support substrate is inclined at an angle ALPHA toward the m-axis of the hexagonal bismuth nitride semiconductor with respect to the normal axis, and the angle ALPHA is In a range of 45 degrees or more and 80 degrees or less or 1 degree or more and 135 degrees or less, the laser structure includes first and second surfaces, and the first surface is a surface opposite to the second surface, and the half The conductor region is located between the second surface and the support base, and the support base of the laser structure is provided at an edge of the first surface at an end of the 152214.doc -9-201140974 of the laser structure. The first and second scratches at one end and the other end, wherein the first and second scratches extend along a plane defined by the normal axis and the a-axis of the hexagonal III-nitride semiconductor The first and second scratches extend from the back surface of the support base, and the end portion of the laser structure has the edge of the first and second scratches and the laser structure A slice of the above-mentioned edge connection of the two faces, the laser resonator of the group III nitride semiconductor laser device comprising the above-mentioned cut surface. 3 1 - A method of fabricating a III-nitride semiconductor laser device, comprising the steps of: forming a substrate product having a laser structure, an anode electrode, and a cathode electrode from a hexagonal III-nitride semiconductor, the laser The structure includes a substrate and a semiconductor region formed on the semipolar primary surface of the substrate, wherein the anode electrode and the cathode electrode are formed on the laser structure; the first surface of the substrate product is scribed to form a plurality of scribed grooves And arranging the substrate product by pressing the first surface of the substrate product to form another substrate product and a laser strip; and a C-axis of the hexagonal III-nitride semiconductor of the substrate The direction of the m-axis of the hexagonal bismuth nitride semiconductor is inclined at a finite angle ALPHA with respect to the normal axis, and the angle ALPHA is 45 degrees or more and 80 degrees or less or 1 degree or more and 135 degrees or less. 152214.doc -10· 201140974 Scope, the above semiconductor area contains the first! a conductive coating layer, a second conductive type cladding layer, and a first layer of the first conductive type cladding layer and the second conductive layer provided between the first cladding layer and the second cladding layer The cladding layer and the active layer are arranged along a normal axis of the semipolar primary surface, and the first surface is a surface opposite to the second surface, and the semiconductor region is located between the second surface and the substrate. Each of the scribed grooves extends along a plane defined by an a-axis of the hexagonal m-type nitride semiconductor and the normal axis, and the laser strip has an i-th and a second end surface formed by the separation, The first and second end faces constitute a laser resonator of the group III nitride semiconductor laser. 152214.doc -11 -
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JP4793494B2 (en) * 2010-01-18 2011-10-12 住友電気工業株式会社 Method for fabricating group III nitride semiconductor laser device
JP5494259B2 (en) * 2010-06-08 2014-05-14 住友電気工業株式会社 Group III nitride semiconductor laser device and method for manufacturing group III nitride semiconductor laser device
JP5206734B2 (en) * 2010-06-08 2013-06-12 住友電気工業株式会社 Method for fabricating group III nitride semiconductor laser device
JP4971508B1 (en) * 2011-01-21 2012-07-11 住友電気工業株式会社 Group III nitride semiconductor laser device and method of manufacturing group III nitride semiconductor laser device
JP5054221B1 (en) * 2011-08-26 2012-10-24 住友電気工業株式会社 Group III nitride semiconductor laser device

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