TW201137825A - Organic light emitting diode display and organic light emitting diode pixel circuit thereof - Google Patents

Organic light emitting diode display and organic light emitting diode pixel circuit thereof Download PDF

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TW201137825A
TW201137825A TW99113958A TW99113958A TW201137825A TW 201137825 A TW201137825 A TW 201137825A TW 99113958 A TW99113958 A TW 99113958A TW 99113958 A TW99113958 A TW 99113958A TW 201137825 A TW201137825 A TW 201137825A
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transistor
signal
source
gate
drain
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TW99113958A
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TWI430236B (en
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Hsuan-Ming Tsai
Yuan-Chun Wu
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Au Optronics Corp
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Abstract

An organic light emitting diode (OLED) display and an organic light emitting diode pixel circuit thereof are provided. The OLED pixel circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor and an organic light emitting diode. A source/drain of the first transistor is adapted to receive display data. The other source/drain of the first transistor is coupled to a source/drain of the fourth transistor and is coupled to the gate of the second transistor and a source/drain of the third transistor through the capacitor. A source/drain of the second transistor is coupled to the other source/drain of the third transistor and the other source/drain of the fourth transistor and is coupled to a source/drain of the fifth transistor. The other source/drain of the fifth transistor is coupled to a first supply voltage. The anode and the cathode of the organic light emitting diode are coupled to the other source/drain of the second transistor and a second supply voltage respectively. Wherein, the second supply voltage is smaller than the first supply voltage.

Description

201137825 六、發明說明: 【發明所屬之技術領域】 本發明是-種有關於有機發光二極體的顯示技術,且特別 是有關於-種有料光二極體顯示裝置及其有機發光二極體 畫素電路。 【先前技術】 有機發光二極體(Organic Light Emitting Diode,〇咖)面板 是以有機發光二極體來作為發光元件。而有機發光二極體乃是 •-種由電流來進行驅動的元件’其發絲度會隨著通過有機發 光二極體的電流而改變。因此,如何精準地控制通過有機發光 二極體的電流遂成為有機電激發光面板發展中的重要課題。 請參照圖1 ’其為習知之有機發光二極體顯示裝置的示意 圖。此有機發光二極體顯示裝置100包括有掃描驅動電ς 110、資料驅動電路120、電源電壓供應電路13〇與顯示面板 140。而顯示面板140又包括有多條掃描線(如標示142所示)、 多條資料線(如標示144所示)、導線146與多個畫素(如標示 春148所示每一畫素148是由電晶體148心電晶體148_2、 電容148-3與有機發光二極體148_4所組成。其中,電晶體⑽心 與148-2皆以Ν型電晶體來實現,例如是皆以ν型薄膜電晶 體(N-type Thin-Film Transistor,N_type TFT)來實現。而圖中所 示之OVSS係為參考用的電源電壓,例如是接地電位。一般來 說,電晶體148-1在這樣的晝素電路架構是稱為開關電晶體, 而電晶體148-2在這樣的晝素電路架構則是稱為驅動電晶體。 在圖1所示之架構中,每一畫素148中的電晶體148_2皆 透過導線146接收電源電壓供應電路130所提供之電源電壓 201137825 OVDD ’且每-畫素148中之有機發光二極體148 4的陰極皆 耦接參考㈣魏電壓0VSS。喊躲144所傳送之顯示資 料的電壓將會與電源電壓0VDD與〇vss之電位差共同影響 通過有機發光二極體148-4的電流大小,藉此控制有機發光二 極體148-4的亮度。 然而’由於上述這些晝素148中的電晶體皆會因為製程上 的差異而有不同的臨界電壓(Thresh〇kJ v〇hage)變異,也會因 為長時間操作導致臨界電壓飄移而造成不同的臨界電壓變 異’使得通過各有機發光二極體148_4的電流大小不一致而造 成些晝素148的受度不一致,進而導致顯示畫面的亮度出現 不均勻的現象。 此外,隨著有機發光二極體148_4的老化,使得有機發光 一極體148_4的内阻上升,進一步使得有機發光二極體148_4 的跨壓上升。而有機發光二極體148_4之跨壓的上升,將迫使 電晶體148-2(即驅動電晶體)的沒極_源極電壓(即vds)變小。而 由於通過電晶體148-2的電流大小是與電晶體148_2的乂⑽電 壓成正比,因此在電晶體148-2的VDS電壓變小的情況下,通 Φ 過電晶體I48-2的電流也會變小,進一步使得有機發光二極體 148-4的亮度變低。如此一來,由於有機發光二極體148 4的 老化現象會降低有機發光二極體148·4的亮度,導致顯示晝面 出現了允度不均勻的現象。這些亮度不均勻現像即所謂的烙痕 (Image Sticking)現象。 藉由上述可知,畫素148所示的這種有機發光二極體畫素 電路會因為電晶體的臨界電壓變異而導致顯示畫面出現亮度 不均勻的現象’也會因為有機發光一極體的老化而導致顯示畫 面出現亮度不均勻的現象。 5 201137825 【發明内容】 路’其可改善因電二c有機發光二極體晝素電 化而導致顯示晝^亮度不均m異與有機發光:極體的老 極體畫素务電月機目^^在提供一種採用上述有機發光二 本發明置。 電晶體、第二電晶體第發電5極電路伽^201137825 VI. Description of the Invention: [Technical Field] The present invention relates to a display technology for an organic light-emitting diode, and more particularly to a light-emitting diode display device and an organic light-emitting diode display thereof Prime circuit. [Prior Art] An organic light emitting diode (Organic Light Emitting Diode) panel is an organic light emitting diode as a light emitting element. The organic light-emitting diode is an element that is driven by an electric current, and its hairiness changes with the current passing through the organic light-emitting diode. Therefore, how to accurately control the current passing through the organic light-emitting diode becomes an important issue in the development of the organic electroluminescent panel. Please refer to Fig. 1 which is a schematic view of a conventional organic light emitting diode display device. The organic light emitting diode display device 100 includes a scan driving device 110, a data driving circuit 120, a power supply voltage supply circuit 13A, and a display panel 140. The display panel 140 further includes a plurality of scan lines (as indicated by the symbol 142), a plurality of data lines (as indicated by the numeral 144), a wire 146 and a plurality of pixels (such as each pixel 148 indicated by the spring 148). It is composed of a transistor 148, an electrocardiograph 148_2, a capacitor 148-3, and an organic light-emitting diode 148_4. The transistor (10) and the 148-2 are realized by a Ν-type transistor, for example, a ν-type film. The O-type thin-Film Transistor (N_type TFT) is used for the circuit, and the OVSS shown in the figure is the reference power supply voltage, for example, the ground potential. In general, the transistor 148-1 is in such a state. The circuit architecture is called a switching transistor, and the transistor 148-2 is called a driver transistor in such a pixel circuit structure. In the architecture shown in Figure 1, the transistor 148_2 in each pixel 148 The power supply voltage 201137825 OVDD ' provided by the power supply voltage supply circuit 130 is received through the wire 146 and the cathode of the organic light-emitting diode 148 4 in each pixel 148 is coupled to the reference (four) Wei voltage 0VSS. The voltage of the displayed data will be the same as the power supply voltage 0VDD and 〇vss The difference affects the magnitude of the current passing through the organic light-emitting diode 148-4, thereby controlling the brightness of the organic light-emitting diode 148-4. However, since the transistors in the above-mentioned halogens 148 are different in process, However, there are different threshold voltages (Thresh〇kJ v〇hage) variations, and different threshold voltage variations may occur due to the threshold voltage drift caused by long-term operation, which causes the currents of the respective organic light-emitting diodes 148_4 to be inconsistent. The degree of acceptance of the halogen 148 is inconsistent, which leads to uneven brightness of the display screen. In addition, as the organic light-emitting diode 148_4 ages, the internal resistance of the organic light-emitting diode 148_4 rises, further making the organic light-emitting diode The voltage across the pole body 148_4 rises, and the rise in the voltage across the organic light-emitting diode 148_4 will force the pole-source voltage (ie, vds) of the transistor 148-2 (ie, the driving transistor) to become smaller. The magnitude of the current through the transistor 148-2 is proportional to the voltage of the 乂(10) of the transistor 148_2, so that in the case where the VDS voltage of the transistor 148-2 becomes small, the Φ passes through the transistor I48-2. The flow is also reduced, further reducing the brightness of the organic light-emitting diode 148-4. As a result, the aging phenomenon of the organic light-emitting diode 148 4 reduces the brightness of the organic light-emitting diode 148·4, resulting in There is a phenomenon of unevenness in the display surface. These uneven brightness phenomena are called image sticking phenomenon. As can be seen from the above, the organic light-emitting diode pixel circuit shown by pixel 148 will The phenomenon of uneven brightness on the display screen due to the critical voltage variation of the transistor may also cause uneven brightness of the display screen due to aging of the organic light-emitting body. 5 201137825 [Summary of the Invention] Lu's can improve the display of 昼^brightness unevenness and organic luminescence due to the electrification of the electric two-electron luminescent diodes: the polar body of the old body ^^ In the present invention, a second embodiment of the present invention is provided. Transistor, second transistor, power generation 5 pole circuit gamma ^

電容與有_二顧;;mn_晶體、 -源/沒極與第二源/沒極,,曰曰體具有第-閘極、第 料。所述之電容罝古势* ,原/汲極適用於接收顯示資 汲極。所述之第ι與第二蠕’且第一端麵接第二源/ 源_且第、第三祕極, 具有第三間榀墙 之第一螭。所述之第三電晶體 接Ϊ五源/汲極與第六源/汲極,且第五源/汲極耦 第六源/嶋接第三源/沒極。所述之第四電 、第七源/w第八源/汲極,且第七源/ 之=第二源/汲極’而第八源/汲極耦接第三源/汲極。所述 盆體具有第五·、第九源成極與第七織極,真 t 軸接第—電源電壓,而第十源/祕耗接第三源/ 、。斤过之有機發光一極體之陽極與陰極分別輕接第四游/ ;及極與第二電源電壓。其中,第二電源電壓小於第-電源電麽。 依照上述有機發光二極體畫素電路之一較佳實施例戶斤 述在預充電期間中,第一電晶體、第三電晶體與第五電晶雜 各自依據其閘極訊號而呈現導通,而第四電晶體則依據其閘極 °凡號而呈現關閉;在寫入期間中,第一電晶體與第三電晶體各 自依據其閘極訊號而呈現導通,而第四電晶體與第五電晶體則 6 201137825 在發光期間中,第-電晶體 與第五電晶=====’,電晶體 期間在4=之一 示面板、資料=發光一極體顯示裴置’其包括有顯 貝枓驅動電路與掃描驅動雷政。 體種而;又包括有第-電 二極體。、電容與有機發光 二源/汲極,且篦一、、语am有第閘極、第一源/汲極與第 具有第-端斑第-端、,〆且^用於接收顯示資料。所述之電容 二電晶體具有'第::極第第源_。所述之第 電容之第二端。所體:二= 極第三源/汲極。所述之第:電接:體有極第= 沒極,而沒極,且第七源/沒極耗接第二 ;第五閘極 '苐九:::=極=第五電晶趙具 發光第十源/_接第三源_。所述= 壓。其中,第二^與陰極分別健第四源/汲極與第二電源電 電路用以提^_頓小於第—電源頓。所述之資料驅動 1極、至於所述之掃描驅動電路, 第四電晶體與第五電晶體關閉’亦用以在發 201137825 ==中控㈣-電晶體與第三電晶 體與第五電晶體導通。其中,寫㈣弟四冤曰曰 發光期間在寫人顧之後。在預域_之後,而 本發明乃是採用五個電晶體、—個電容盥一 有機發光二極體晝素電路。透過^述這些替“ 2 =關,以及各電晶體的特定導通時序所產㈣電路特 界電過有機㈣二極體的電流A小與驅動電晶體的臨 == 通過有機發光二極體的電流大小會與有機發光Capacitor and _ _ 顾;; mn_ crystal, - source / no pole and second source / no pole, the body has a first - gate, the first material. The capacitance is the oldest potential*, and the original/bungee is suitable for receiving display assets. The first and second creeps and the first end face are connected to the second source/source_ and the third and third secret poles have a first turn of the third wall. The third transistor is connected to the fifth source/drain and the sixth source/drain, and the fifth source/drain is coupled to the sixth source/drain to the third source/drain. The fourth source, the seventh source/w eighth source/drain, and the seventh source/the second source/drainage and the eighth source/drain are coupled to the third source/drain. The basin has a fifth, a ninth source pole and a seventh weave, the true t-axis is connected to the first-supply voltage, and the tenth source/secret is connected to the third source/. The anode and the cathode of the organic light-emitting one are lightly connected to the fourth tour/; and the pole and the second power supply voltage. Wherein, the second power supply voltage is less than the first power supply. According to a preferred embodiment of the above-described organic light-emitting diode pixel circuit, during the pre-charging period, the first transistor, the third transistor and the fifth transistor are each turned on according to the gate signal thereof. The fourth transistor is turned off according to the gate of the gate; during the writing period, the first transistor and the third transistor are respectively turned on according to the gate signal thereof, and the fourth transistor and the fifth transistor are fifth. The transistor is 6 201137825, during the illuminating period, the first transistor and the fifth transistor =====', during the period of the transistor, at 4=one of the panel, the data=the light-emitting one shows the device' Xianbei drive circuit and scan drive Lei Zheng. In addition to the body; it also includes a first-electric diode. Capacitor and organic light emitting diodes/drain electrodes, and 篦一, 语am has a gate, a first source/dual pole and a first end-end patch-end, and is used to receive display data. The capacitor diode has a 'first:: pole first source _. The second end of the first capacitor. Body: two = extremely third source / bungee. The first: electrical connection: the body has a pole = no pole, and no pole, and the seventh source / no pole consumes the second; the fifth gate '苐 nine:::= pole = fifth electric crystal Zhao With the tenth source of light / _ connected to the third source _. Said = pressure. Wherein, the second source and the cathode respectively have a fourth source/drain and a second power supply circuit for raising the voltage smaller than the first power supply. The data drives a pole, as for the scan driving circuit, and the fourth transistor and the fifth transistor are turned off 'also used to send the 201137825 == central control (four) - the transistor and the third transistor and the fifth The crystal is turned on. Among them, write (four) brother four 冤曰曰 during the illuminating period after writing people. After the pre-domain, the present invention uses five transistors, a capacitor, an organic light-emitting diode, and a halogen circuit. By substituting these for "2 = off, and the specific conduction timing of each transistor is produced (4) The circuit boundary is electrically over the organic (four) diode current A is small and the driving transistor is near == through the organic light-emitting diode Current will be related to organic light

比。因此,有機發光二極體的亮度與驅 外界電壓無關’因而能使得各晝素的亮度一致。此 二 =發光二極體老化而使得有機發光二極體的跨壓上 :通過有機發光二㈣的電流Α小也會隨著跨壓的上升程度 ,話說’通過有機發k極體的電流大小會隨著有 體的老化程度而提高。因此,每個畫素因有機發光 =體老化而出現亮度降低的現象便可以藉由上述電流大小 ::::到補償’進而能改善因有機發光二極體老化所造成 為讓本發明之上述和其他目的、特徵和優點能更明顯易 ’下文特舉較佳實施例,並酉己合所附圖式,作詳細說明如下。 【實施方式】 第一實施例: =參照圖2,其繪示依照本發明一實施例之有機發光二極 旦素電路。此有機發光二極體畫素電路200是由電晶體 曰、電晶體204、電容裏、電晶體208、電晶體210(即驅動 電s曰體)、有機發光二極體犯與電晶體叫所組成。在此例 201137825 中’上述之五個電晶體皆以一]SJ型電晶體來實現,例如是皆 以一個N型薄膜電晶體來實現。 圖2所示之OVDD係為電源電壓供應電路(未繪示)所提供 的電源電壓。而圖中所示之OVSS,其為參考用的電源電壓, 例如是接地電位。理所當然地,電源電壓0VDD大於電源電 壓OVSS。此外,電晶體202的其中一溽/沒極適用於接收顯示 資料VDATA。而電晶體202與204的閘極皆用以接收掃描訊號 Gn ’其中η為自然數,而Gn表示第η條掃描線所傳送的掃描 訊號。電晶體208的閘極用以接收致能訊號ΕΜ。至於電晶體 鲁 214的閘極則用以接收掃描訊號Gn的反相訊號χ〇η。 圖3繪示圖2之顯示資料VDATA、致能訊號EM、掃描訊 號Gn及其反相訊號χ〇η的訊號時序。請依照說明之需要而參 照圖3與圖2。在預充電期間p中,掃描訊號Gn為高準位 (High),掃描訊號Gn之反相訊號XGn為低準位(L〇w),而致能 汛號EM為高準位。由於掃描訊號Gn與致能訊號EM皆為高 準位,因此電晶體202、204與208皆為導通(Turn 〇n)。而由 於掃描訊號Gn之反相訊號xGn為低準位,因此電晶體214為 • 關閉(Turn〇ff)。此時的電路狀態可由圖4來表示。圖4繪示圖 2之有機發光二極體晝素電路於預充電期間p時的電路狀態。 請參照圖4,此時接點G的電壓大小與電容2〇6的跨壓大小可 分別由下列式(1)與式(2)來表示:ratio. Therefore, the luminance of the organic light-emitting diode is independent of the driving external voltage, and thus the luminance of each pixel can be made uniform. The second = illuminating diode aging causes the cross-voltage of the organic light-emitting diode: the current through the organic light-emitting diode (four) will also increase with the increase in the voltage across the layer, saying that the current through the organic-emitting k-pole Will increase with the degree of aging of the body. Therefore, the phenomenon that the brightness of each pixel is reduced due to organic light emission = body aging can be improved by the above current magnitude:::: to compensation', thereby improving the aging of the organic light-emitting diode to make the above-mentioned Other objects, features, and advantages will be apparent from the following description of the preferred embodiments. [Embodiment] First Embodiment: Referring to Fig. 2, an organic light emitting diode circuit according to an embodiment of the present invention is shown. The organic light-emitting diode pixel circuit 200 is composed of an transistor 曰, a transistor 204, a capacitor, a transistor 208, a transistor 210 (ie, a driving s-body), an organic light-emitting diode, and a transistor. composition. In this example, 201137825, the above five transistors are all realized by an SJ type transistor, for example, by an N-type thin film transistor. The OVDD shown in Fig. 2 is the power supply voltage supplied from a power supply voltage supply circuit (not shown). The OVSS shown in the figure is the reference power supply voltage, for example, the ground potential. As a matter of course, the power supply voltage 0VDD is greater than the power supply voltage OVSS. In addition, one of the transistors 202 is not suitable for receiving the display material VDATA. The gates of the transistors 202 and 204 are both used to receive the scanning signal Gn ' where n is a natural number and Gn is the scanning signal transmitted by the nth scanning line. The gate of the transistor 208 is used to receive the enable signal ΕΜ. The gate of the transistor Lu 214 is used to receive the inverted signal χ〇η of the scanning signal Gn. 3 is a timing diagram of the signal VDATA, the enable signal EM, the scan signal Gn, and the inverted signal χ〇η of FIG. Please refer to Figure 3 and Figure 2 as required. In the pre-charging period p, the scanning signal Gn is at a high level (High), the inversion signal XGn of the scanning signal Gn is at a low level (L〇w), and the enabling signal EM is at a high level. Since both the scanning signal Gn and the enable signal EM are at a high level, the transistors 202, 204 and 208 are all turned on (Turn 〇n). Since the inverted signal xGn of the scanning signal Gn is at a low level, the transistor 214 is turned off (Turn 〇 ̄). The state of the circuit at this time can be represented by FIG. FIG. 4 is a diagram showing the circuit state of the organic light emitting diode halogen circuit of FIG. 2 during a precharge period p. Referring to FIG. 4, the magnitude of the voltage of the contact G and the voltage across the capacitor 2〇6 can be expressed by the following equations (1) and (2), respectively:

Vg=〇VDD ' ……⑴Vg=〇VDD ' ......(1)

Cst=〇VDD-Vdata ……(2) 其申’ Vg表示為接點G的電壓大小,也就是電晶體21〇的閘 極電壓大小,而cst則表示為電容20ό的跨壓大小。 請再參照圖3。接著,在寫入期間冒中,掃描訊號仏仍 201137825 保持在高準位,掃描訊號Gn之反相訊號XGn也保持在低準 位,而致能訊號EM則轉變為低準位。因此,有機發光二極體 畫素電路200會由圖4所示的電路狀態轉變為圖5所示的電路 狀態。圖5繪示圖2之有機發光二極體晝素電路於寫入期間w 時的電路狀態。請依照說明之需要而參照圖5與圖3。此時, 由於掃描訊號Gn為高準位,因此電晶體202與204皆為導通。 而由於致能訊號EM與掃描訊號Gn之反相訊號XGn皆為低準 位,因此電晶體208與214皆為關閉。此時接點G的電壓大 小與電容206的跨壓大小可分別由下列式(3)與式(4)來表示: VG=yS〇+Vth ……⑶ CST = Vso + Vth ~ Vdata ......⑷ 其中,VSQ表示為接點S於此時的電壓大小,也就是電晶體 之源極於此時的電壓大小,而Vth則表示為電晶體210 電壓。 請再參照圖3。接下來,在發光期間E中,掃描訊號α 轉變為低準位,掃描訊號Gn之反相訊號XGn轉變為高準位, 而致能訊號EM亦轉變為高準位。因此,有機發光二極體畫素 ,路200會由圖5所示的電路狀態轉變為圖6所示的電路狀 態。圖6繪示圖2之有機發光二極體畫素電路於發光期間E 時的電路狀態。請依照說明之需要而參照圖6與圖3。此時, 由於掃描訊號Gn為低準位,因此電晶體2〇2與2〇4皆為關閉。 而由於致能訊號EM與掃描訊號Gn之反相訊號XGn皆為高準 位,因此電晶體208與214皆為導通。此時電晶體21〇的閘極 -源極電壓(即VGS電壓)大小可由下列式(5)來表示: VGS =OVDD + ys〇+ V(h _ ν〇ΑτΑ - ys ......(5) 201137825 其中,vs表示為接點s於此時的電 之源極於此時的電壓大 仄小,也就是電晶體210 八4、° V th則表示a带 壓。而將上列式(S)再進—步整理,馬電晶體210的臨界電 vgs-〇vdd+v ,ΛΤ/可得到下列式⑹·· 其中,。 ......⑹ 來表示’· 由於通過有機發光二極體212 的電流大小可由下列式(7)Cst=〇VDD-Vdata (2) Its application 'Vg is expressed as the voltage of the contact G, that is, the gate voltage of the transistor 21〇, and cst is the magnitude of the voltage across the capacitor 20ό. Please refer to Figure 3 again. Then, during the write period, the scan signal remains at the high level for 201137825, the inverted signal XGn of the scan signal Gn is also kept at the low level, and the enable signal EM is turned to the low level. Therefore, the organic light emitting diode circuit 200 is changed from the circuit state shown in Fig. 4 to the circuit state shown in Fig. 5. FIG. 5 is a diagram showing the circuit state of the organic light emitting diode device of FIG. 2 during the writing period w. Please refer to Figure 5 and Figure 3 as required. At this time, since the scanning signal Gn is at a high level, the transistors 202 and 204 are both turned on. Since both the enable signal EM and the inverted signal XGn of the scanning signal Gn are at a low level, the transistors 208 and 214 are both turned off. At this time, the magnitude of the voltage of the contact G and the voltage across the capacitor 206 can be expressed by the following equations (3) and (4): VG=yS〇+Vth (3) CST = Vso + Vth ~ Vdata ... (4) where VSQ is the magnitude of the voltage at which the contact S is at this time, that is, the voltage at which the source of the transistor is at this time, and Vth is expressed as the voltage of the transistor 210. Please refer to Figure 3 again. Next, in the light-emitting period E, the scanning signal α changes to a low level, the inverted signal XGn of the scanning signal Gn is converted to a high level, and the enable signal EM is also converted to a high level. Therefore, the organic light-emitting diode pixel, the path 200 will be changed from the circuit state shown in Fig. 5 to the circuit state shown in Fig. 6. FIG. 6 is a diagram showing the circuit state of the organic light emitting diode pixel circuit of FIG. 2 during the light emitting period E. Please refer to FIG. 6 and FIG. 3 as needed for the description. At this time, since the scanning signal Gn is at a low level, the transistors 2〇2 and 2〇4 are both turned off. Since both the enable signal EM and the inverted signal XGn of the scanning signal Gn are at a high level, the transistors 208 and 214 are both turned on. At this time, the gate-source voltage (ie, VGS voltage) of the transistor 21〇 can be expressed by the following formula (5): VGS = OVDD + ys〇 + V(h _ ν〇ΑτΑ - ys ...... (5) 201137825 where vs is the contact point s at this time, the source of the electric current at this time is much smaller than the voltage at that time, that is, the transistor 210 八, ° V th means a pressure, and will be listed above. The formula (S) is further advanced, and the critical electric power vgs-〇vdd+v of the horse crystal 210 is obtained by the following formula (6). Among them, (6) is expressed as '· The current of the LED 212 can be expressed by the following formula (7)

OLED 2 K^V〇s-Vj 0)OLED 2 K^V〇s-Vj 0)

表示二數V,機發光二極體212的電流大小,κ v矣為二日触 為電晶體21。的閘極·源極電壓,而 二:f 0的臨界電壓。因此,將上列式⑹代入上 列式⑺中,便可得到下列式⑻: 夕⑻Indicates the magnitude of the current of the two-digit V, the organic light-emitting diode 212, and κ v矣 is the two-day touch transistor 21. The gate and source voltages, and the second: the threshold voltage of f 0 . Therefore, by substituting the above formula (6) into the above formula (7), the following formula (8) can be obtained: 夕(8)

OLED iK(〇VDD + Vth-V_—AVs — Vj2 (8) 而將上列式⑻再進-步整理,便可得到下列式⑼: • I〇LED = \Ki〇VDD ~ VDATA -AFS)2 ……(9) 由式(9)可知,l〇LED的大小與電晶體21〇的臨界電壓無關。 ,句話說,I0LED的大小並不受電晶體21〇之臨界電壓變異的 ^ β因此,各畫素的党度得以一致。此外,由上列式(6)的 t明可知ΔΚΑ。,而其中fsq = 〇^ + l _,vth_0LED 為有機發光二極體212的臨界電壓。因此,根據這二個等式再 將上列式(9)再進一步整理,便可得到下列式(1〇): (10) l〇UD = ~K(OVDD - VDATA -vs+ OVSS + vlh OLED y 201137825 由式(10)可知,ioled的大小乃是與Vth 0LED的大小成正比。換 句話說’無論有機發光二極體212的老化使得有機發光二極體 212的跨壓上升了多少,通過有機發光二極體212的電流大小 都會隨著跨壓的上升程度而提高。因此,每個畫素因有機發光 二極體老化而出現亮度降低的現象便可以藉由上述電流大小 的提高而得到補償’進而改善因有機發光二極體老化所造成的 恪痕現象。 第二實施例: ® 藉由第一實施例之教示,本領域具有通常知識者應當知 道’即使有機發光二極體畫素電路200中之電晶體214改成以 一 P型電晶體來實現,例如是以一個P型薄膜電晶體來實現, 亦可實現本發明,一如圖7所示。 圖7繪示依照本發明另一實施例之有機發光二極體畫素 電路。在圖7所示之有機發光二極體晝素電路700中,電晶體 214已改成以一 P型電晶體來實現,且電晶體214的閘極亦耦 接掃描訊號Gn。而在圖7的其餘標示中,與圖2中之標示相 • 同者表示為相同之構件或訊號。將電晶體214改成以一 P型電 晶體來實現的好處,是有機發光二極體畫素電路700不需要使 用到掃描訊號Gn之反相訊號XGn ’使得反相訊號XGn可予以 省略’且有機發光二極體晝素電路700仍可依照圖3所示之掃 描訊號Gn、致能訊號EM與顯示資料VOLED的訊號時序來進行 操作。 第三實施例: 藉由第一實施例之教示,本領域具有通常知識者應當知 12 201137825 道’即使有機發光二極體晝紊電路200中之電晶體202與204 皆改成以一 P型電晶體來實現,例如是皆以一個P型薄骐電晶 體來實現,亦可實現本發明,一如圖8所示。 圖8繪示依照本發明另一實施例之有機發光二極體書素 電路。在圖8所示之有機發光二極體畫素電路800中,電=體 202與204皆已改成以一 p型電晶體來實現,且電晶體2(^與 204的閘極亦皆耦接掃描訊號Gn之反相訊號XGn。而在圖^ 的其餘標示中’與圖2中之標示相同者表示為相同之構件或吼 號。將電晶體202與204皆改成以一 P型電晶體來實現的^ 處,是有機發光二極體晝素電路800不需要使用到掃描訊號 Gn ’使得掃描訊號Gn可予以省略,且有機發光二極體晝素電 路800仍可依照圖3所示之掃描訊號Gn的反相訊號、致 能訊號EM與顯示資料V0LED的訊號時序來進行操作。以'另一 觀點來看,有機發光二極體畫素電路800中的電晶體2〇2、2〇4 與214就是將所述的反相訊號XGn當作一般的掃描訊號來使 用0 藉由第一實施例至第三實施例的教示’可以歸納出這些實 施例中之電晶體202、204、208與214之導通時序的規則。也 就是說,無論電晶體202、204、208與214是以N髮電晶體 還是以P型電晶體來實現,這四個電晶體的導通時序都必須符 合這樣的規則。此規則說明如下:在預充電期間p中,電晶體 202、204與208各自依據其閘極訊號而呈現導通,而電晶體 214則依據其閘極訊號而呈現關閉;在寫入期間w中,電晶體 202與204各自依據其閘極訊號而呈現導通,而電晶體208與 212則各自依據其閘極訊號而呈現關閉;在發光期間E中,電 13 201137825OLED iK (〇VDD + Vth-V_-AVs - Vj2 (8) and the above equation (8) is further stepped back to obtain the following equation (9): • I〇LED = \Ki〇VDD ~ VDATA -AFS)2 (9) From equation (9), the size of the LED is independent of the threshold voltage of the transistor 21〇. In other words, the size of the I0LED is not affected by the threshold voltage variation of the transistor 21〇. Therefore, the party's degree of each pixel is consistent. Further, ΔΚΑ is known from t of the above formula (6). And wherein fsq = 〇^ + l _, vth_0LED is the threshold voltage of the organic light-emitting diode 212. Therefore, according to these two equations, the above equation (9) can be further refined to obtain the following formula (1〇): (10) l〇UD = ~K(OVDD - VDATA -vs+ OVSS + vlh OLED y 201137825 It can be seen from equation (10) that the size of the iole is proportional to the size of the Vth 0 LED. In other words, regardless of the aging of the organic light-emitting diode 212, the cross-voltage of the organic light-emitting diode 212 rises. The magnitude of the current of the light-emitting diode 212 increases with the increase of the voltage across the cross-voltage. Therefore, the phenomenon that the brightness of each pixel is reduced due to the aging of the organic light-emitting diode can be compensated by the increase of the above-mentioned current. Further, the scar phenomenon caused by the aging of the organic light-emitting diode is improved. Second Embodiment: ® With the teaching of the first embodiment, those skilled in the art should know that even the organic light-emitting diode pixel circuit 200 The transistor 214 is modified to be implemented by a P-type transistor, for example, by a P-type thin film transistor, and the present invention can also be implemented, as shown in FIG. 7. FIG. 7 illustrates another embodiment in accordance with the present invention. Organic hair of the examples In the organic light emitting diode circuit 700 shown in FIG. 7, the transistor 214 has been modified to be implemented by a P-type transistor, and the gate of the transistor 214 is also coupled to scan. Signal Gn. In the remaining indications of Figure 7, the same components or signals are indicated as the same in Figure 2. The benefit of changing the transistor 214 to a P-type transistor is organic illumination. The diode pixel circuit 700 does not need to use the inverted signal XGn ' of the scanning signal Gn so that the inverted signal XGn can be omitted' and the organic light emitting diode circuit 700 can still follow the scanning signal Gn shown in FIG. The signal EM is enabled to operate with the signal timing of the display data VOLED. Third Embodiment: With the teachings of the first embodiment, those skilled in the art should know that 12 201137825 track 'even organic light-emitting diodes The transistors 202 and 204 in the circuit 200 are all modified to be implemented by a P-type transistor, for example, by a P-type thin germanium transistor, and the present invention can also be implemented, as shown in Fig. 8. Fig. 8 Illustrated according to another embodiment of the present invention In the organic light-emitting diode pixel circuit 800 shown in FIG. 8, the electric bodies 202 and 204 have been modified to be realized by a p-type transistor, and the transistor 2 ( The gates of ^ and 204 are also coupled to the inverted signal XGn of the scanning signal Gn. In the remaining indications of the figure, 'the same as the one shown in Fig. 2 is denoted by the same member or nickname. The transistor 202 is 204 is changed to a P-type transistor, and the organic light-emitting diode circuit 800 does not need to use the scanning signal Gn ', so that the scanning signal Gn can be omitted, and the organic light-emitting diode is The circuit 800 can still operate according to the signal timing of the inverted signal, the enable signal EM and the display data V0LED of the scan signal Gn shown in FIG. In another aspect, the transistors 2〇2, 2〇4, and 214 in the organic light-emitting diode pixel circuit 800 use the inverted signal XGn as a general scanning signal to use 0. The teachings of the first to third embodiments can be summarized as rules for the conduction timing of the transistors 202, 204, 208, and 214 in these embodiments. That is, regardless of whether the transistors 202, 204, 208, and 214 are implemented as N-powered crystals or as P-type transistors, the turn-on timing of the four transistors must conform to such a rule. The rule is as follows: during the pre-charging period p, the transistors 202, 204 and 208 each are turned on according to their gate signals, and the transistor 214 is turned off according to its gate signal; during the writing period w, The transistors 202 and 204 each are turned on according to their gate signals, and the transistors 208 and 212 are each turned off according to their gate signals; during the illumination period E, the electricity 13 201137825

晶體202與204各自依據其閘極訊號而2 ϊΒ日日_ 208與214則各自依據其閘; 間W在預充電期間P之後, 第四實施例:The crystals 202 and 204 are each based on their gate signals. 2 ϊΒ _ _ 208 and 214 are each according to their gates; between W and after the precharge period P, the fourth embodiment:

藉由第一實施例至第三實施例之教- 採用上述有機發光二極體畫素電路之有機發光二極體顯示裝By the teachings of the first embodiment to the third embodiment - the organic light emitting diode display device using the above organic light emitting diode pixel circuit

線(如標示942-1所示)、多條掃描線(如標示942_2所示)、多條 反相訊號線(如標示942-3所示)、多條資料線(如標示944所 示)、導線946與多個畫素(如標示948所示)。.' 在此例中’每一畫素948皆採用圖2之有機發光二極體畫 素電路200所示的電路架構,因此在每一畫素948中與圖2 中之標示相同者表示為相同之構件或訊號。值得注意的是在 • 此例中,參考用的電源電壓OVSS係為接地電位如圖9所 示,每一畫素948中的電晶體皆是以N型電晶體來實現,例 如疋皆以N型薄膜電晶體來實現。此外,關於掃描驅動電路 910的部份,標示EMn表示為第n列晝素948所需之致能訊號。 而示為第η列晝素948所需之掃描訊號。至於χ(}η,其 表示為第η列晝素948所需之掃描訊號Gn的反相訊號。其中, η為自然數。以上所述構件的詳細連接關係已在圖9中展示, 在此便不再贅述。 上述之資料驅動電路920用以提供各畫素948所需之顯示 201137825 資料。至於上述之掃描驅動電路91〇,其可依照圖3所示的訊 號時序來驅動每一列畫素948。請同時參照圖9與圖3,以顯 示面板940中所描繪的第η列畫素948為例,掃描驅動電路 910在預充電期間ρ中,會使掃描訊號Gn與致能訊號ΕΜη皆 為高準位,並使掃描訊號^之反相訊號XGn為低準位。而掃 描驅動電路910在寫入期間w中,會使掃描訊號Gn為高準位, 並使掃描訊號Gn之反相訊號XGn與致能訊號EMn皆為低準 位。此外’掃描驅動電路910在發光期間E中,會使掃描訊號Line (as indicated by the label 942-1), multiple scan lines (as indicated by the symbol 942_2), multiple inverted signal lines (as indicated by the symbol 942-3), and multiple data lines (as indicated by the symbol 944) Wire 946 and a plurality of pixels (as indicated by numeral 948). In this example, 'each pixel 948 uses the circuit structure shown in the organic light-emitting diode pixel circuit 200 of FIG. 2, so that the same as the one shown in FIG. 2 in each pixel 948 is represented as The same component or signal. It is worth noting that in this example, the reference power supply voltage OVSS is the ground potential. As shown in Figure 9, the transistors in each pixel 948 are implemented as N-type transistors, for example, N A thin film transistor is used to achieve this. In addition, regarding the portion of the scan driving circuit 910, the mark EMn is indicated as the enable signal required for the nth column of pixels 948. The scanning signal required for the nth column 948 is shown. As for χ(}η, which is represented as the inverted signal of the scanning signal Gn required for the nth column 948. Among them, η is a natural number. The detailed connection relationship of the above components is shown in FIG. The above data driving circuit 920 is used to provide the display 201137825 data required for each pixel 948. As for the above scanning driving circuit 91, it can drive each column of pixels according to the signal timing shown in FIG. 948. Referring to FIG. 9 and FIG. 3 simultaneously, taking the nth column pixel 948 depicted in the display panel 940 as an example, the scan driving circuit 910 causes the scan signal Gn and the enable signal to be in the precharge period ρ. The high level is set, and the inverted signal XGn of the scan signal ^ is at a low level. In the writing period w, the scan driving circuit 910 causes the scanning signal Gn to be at a high level and inverts the scanning signal Gn. Both the signal XGn and the enable signal EMn are low-level. In addition, the scan drive circuit 910 causes the scan signal during the illumination period E.

Gn為低準位,並使掃描訊號Gn之反相訊號XGn與致能訊號 ® EMn皆為高準位。 由於顯示面板940採用圖2之有機發光二極體畫素電路 200所示的電路架構,因此各畫素948的亮度得以一致,且每 個畫素948因有機發光二極體老化而出現亮度降低的現象可 以得到補償’進而改善因有機發光二極體老化所造成的烙痕 象。 第五實施例: • 藉由第四實施例之教示,本領域具有通常知識者應當知道 前述顯示面板940中的每一晝素948皆可改為採用圖7之有 發光二極體晝素電路700所示的電路架構。如此一來,有機 光二極體顯示裝置900便可省略所有的反相訊號線(如標示 9 4 2 - 3所示)’且掃描驅動電路91 〇也不需要具備可輸出掃描訊 號之反相訊號的功能。 ° 第六實施例: 藉由第四實施例之料,本領域具有通常知識者應當知道 201137825 前述顯示面板940中的每一晝素948皆可改為採用圖8之有機 發光二極體晝素電路8〇〇所示的電路架構。如此一來,有機發 光二極體顯示裝置900便可省略所有的掃描線(如標示942-2 所示),且掃描驅動電路910也不需要具備可輸出掃描訊號的 功能。 藉由第四實施例至第六實施例之教示,可以歸納出這些實 施例中之掃描驅動電路910導通各晝素948之電晶體202、 204、208與214的規則。也就是說,無論電晶體202、204、 208與214是以N型電晶體還是以p型電晶體來實現,這四個 電晶體的導通時序都必須符合這樣的規則。以顯示面板94〇中 所描繪的第η列晝素948為例:掃描驅動電路91〇用以在預充 電期間Ρ中控制此列每一晝素948之電晶體202、204與208 導通,並控制此列每一晝素948之電晶體2Μ關閉。掃描驅動 ,路910還用以在寫入期間w中控制此列每一畫素948之電 晶體202與204導通,並控制此列每一畫素9佔之電晶體2〇8 與214關閉。此外,掃描驅動電路削亦用以在發光期間e 中^制=列每-畫素948之電晶體2〇2與2〇4關閉,並控制此 7-旦素948之電晶體208與214導通。其中,寫入期間W 電期間P之後,而發光期間E在寫入期間W之後。 右撼所述’本發明乃是採用五個電晶體、—個電容斑一' 此構來製作有機發光二極體畫素電路。透過上述 的電路特彳通時序所產 晶體的臨界電壓無機發光二極體的電流大小與驅動 且通過有機發光二極體的電流大小會 201137825 有機發光二極體本身的跨壓成正比。因此,有機發光二極體的 亮度與驅動電晶體的臨界電壓無關,因而能使得各畫素的亮度 一致。此外,即便有機發光二極體老化而使得有機發光二極體 的跨壓上升,通過有機發光二極體的電流大小也會隨著跨壓的 上升程度而提高。換句話說,通過有機發光二極體的電流大小 會隨著有機發光二極體的老化程度而提高。因此,每個晝素因 有機發光二極體老化而出現亮度降低的現象便可以藉由上述 電流大小的提高而得到補償,進而能改善因有機發光二極體老 化所造成的烙痕現象。 雖然本發明已以較佳實施例揭露如上,然其並非用以限定 本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍 内,备可作些許之更動與潤飾,因此本發明之保護範圍當視 附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為^知之有機發光二極體顯示裝置的示意圖。Gn is at a low level, and the inversion signal XGn and the enable signal ® EMn of the scanning signal Gn are both at a high level. Since the display panel 940 adopts the circuit structure shown by the organic light emitting diode pixel circuit 200 of FIG. 2, the brightness of each pixel 948 is uniform, and each pixel 948 has a brightness reduction due to aging of the organic light emitting diode. The phenomenon can be compensated' to improve the appearance of the burn-in caused by the aging of the organic light-emitting diode. The fifth embodiment: • With the teachings of the fourth embodiment, those skilled in the art should know that each of the elements 948 in the display panel 940 can be replaced with the LED diode circuit of FIG. The circuit architecture shown in 700. In this way, the organic photodiode display device 900 can omit all the inverted signal lines (as indicated by the mark 9 4 2 - 3) and the scan driving circuit 91 does not need to have an inverted signal for outputting the scan signal. The function. 6th Embodiment: With the material of the fourth embodiment, those skilled in the art should know that 201137825 each of the display panels 940 can be replaced with the organic light-emitting diode of FIG. The circuit architecture shown in circuit 8〇〇. In this way, the organic light-emitting diode display device 900 can omit all the scanning lines (as indicated by the numeral 942-2), and the scanning driving circuit 910 does not need to have the function of outputting the scanning signals. By the teachings of the fourth embodiment to the sixth embodiment, the rules of the scan driving circuit 910 of these embodiments for turning on the transistors 202, 204, 208 and 214 of the respective elements 948 can be summarized. That is, regardless of whether the transistors 202, 204, 208, and 214 are implemented as N-type transistors or p-type transistors, the turn-on timing of the four transistors must conform to such a rule. Taking the n-th pixel 948 depicted in the display panel 94A as an example: the scan driving circuit 91 is configured to control the transistors 202, 204, and 208 of each cell 948 in the column during the pre-charging period, and Control the transistor 2 of each column 948 in this column to turn off. The scan driver circuit 910 is further configured to control the transistors 202 and 204 of each pixel 948 of the column to be turned on during the writing period w, and control each pixel 9 of the column to occupy the transistors 2〇8 and 214. In addition, the scan driving circuit is also used to turn off the transistors 2〇2 and 2〇4 of the column per pixel 948 during the light-emitting period e, and control the transistors 208 and 214 of the 7-denier 948 to be turned on. . Here, the writing period W is after the period P, and the light-emitting period E is after the writing period W. The right side of the invention is based on the fact that five transistors, a capacitor spot, are used to fabricate an organic light-emitting diode pixel circuit. The magnitude of the threshold voltage of the phosphor produced by the above-mentioned circuit characteristics is proportional to the magnitude of the current driven by the organic light-emitting diode and the voltage across the organic light-emitting diode itself. Therefore, the luminance of the organic light-emitting diode is independent of the threshold voltage of the driving transistor, and thus the luminance of each pixel can be made uniform. Further, even if the organic light-emitting diode ages, the voltage across the organic light-emitting diode increases, and the magnitude of the current passing through the organic light-emitting diode increases as the voltage rises. In other words, the magnitude of the current passing through the organic light-emitting diode increases as the organic light-emitting diode ages. Therefore, the phenomenon that the brightness of each of the halogens is lowered due to the aging of the organic light-emitting diode can be compensated by the increase in the magnitude of the above current, thereby improving the occurrence of the mark phenomenon caused by the aging of the organic light-emitting diode. While the invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of an organic light emitting diode display device.

圖2、’’s示依照本發明一實施例之有機發光二極體畫素電 訊號之顯示資料、致能訊號、掃描訊號及其反相 的電之有機發光二極體晝素電路於預充電期間時 電路狀態。目2之有機發光二極體晝素電路於寫人期間時的 電路ϋ繪Μ2之麵發光二極體畫素電路於發光期間時的 201137825 圖7繪示依照本發明另一實施例之有機發光二極體畫素 電路。 圖8繪示依照本發明另一實施例之有機發光二極體畫素 電路。 圖9為依照本發明一實施例之有機發光二極體顯示裝置 的示意圖。 【主要元件符號說明】 100、900 :有機發光二極體顯示裝置 • 110、910 :掃描驅動電路 120、920 :資料驅動電路 130、930 :電源電壓供應電路 140、940 :顯示面板 142、942-2 :掃描線 144、944 :資料線 146、946 :導線 148、948 :晝素 φ 148-1、148-2 :電晶體 148-3 :電容 148-4 :有機發光二極體 200、700、800 :有機發光二極體晝素電路 202、204、208、210、214 :電晶體 206 :電容 212 :有機發光二極體 942-1 : EM訊號線 942-3 :反相訊號線 201137825 E:發光期間 EM :致能訊號2, FIG. 2 shows a display data, an enable signal, a scan signal, and an inverted electric organic light-emitting diode circuit of the organic light-emitting diode pixel according to an embodiment of the invention. Circuit state during charging. The organic light-emitting diode of the organic light-emitting diode is used in the circuit of the human body during the writing process. The light-emitting diode circuit is illuminated during the period of 201137825. FIG. 7 illustrates the organic light-emitting according to another embodiment of the present invention. Diode pixel circuit. FIG. 8 illustrates an organic light emitting diode pixel circuit in accordance with another embodiment of the present invention. Figure 9 is a schematic diagram of an organic light emitting diode display device in accordance with an embodiment of the present invention. [Description of main component symbols] 100, 900: organic light emitting diode display device • 110, 910: scan driving circuit 120, 920: data driving circuit 130, 930: power supply voltage supply circuit 140, 940: display panel 142, 942- 2: scan lines 144, 944: data lines 146, 946: wires 148, 948: halogen φ 148-1, 148-2: transistor 148-3: capacitor 148-4: organic light-emitting diodes 200, 700, 800: organic light-emitting diode halogen circuit 202, 204, 208, 210, 214: transistor 206: capacitor 212: organic light-emitting diode 942-1: EM signal line 942-3: reverse signal line 201137825 E: EM during illumination: enable signal

Gn :掃描訊號 OVDD :電源電壓 OVSS :參考用的電源電壓 P:預充電期間Gn : Scan signal OVDD : Power supply voltage OVSS : Reference power supply voltage P: Precharge period

Vdata :顯示資料 W:寫入期間 XGn :掃描訊號Gn的反相訊號Vdata : Display data W: Write period XGn : Reverse signal of scan signal Gn

Claims (1)

201137825 七、申請專利範圍: 1、一種有機發光二極體晝素電路,包括: -第-電晶體,具有一第一閘極 二源/汲極,該第-源/祕適用於接收—顯示資料;極與一第 源/祕電容,具有一第一端與一第二端’該第一端輕接該第二 -第二電晶體’具有—第二閘極、一第三源/汲極 四源/汲極,該第二閘極耦接該電容之該第二端; 一第201137825 VII, the scope of application for patents: 1. An organic light-emitting diode halogen circuit comprising: - a first transistor, having a first gate two source / drain, the first source / source for receiving - display Data; a pole and a source/secret capacitor having a first end and a second end 'the first end is lightly connected to the second-second transistor' having a second gate, a third source/汲a fourth source/drain, the second gate is coupled to the second end of the capacitor; -第三電晶體’具有一第三閘極、一第五源/汲極 =二=五職_接該㈣極’該第六一 一第四電晶體,具有-第四閘極、—第七源/汲極盘 ,該第七源/汲_接該第二源/錄,該第八源 耦接該第三源/汲極; 4 了第五電晶體,具有-第五間極、—第九源/沒極與 十源/;及極,该第九源/沒極麵接—第―電源電壓, 汲極耗接該第三源/沒極;以及 ’、 -有機發光二極體’其陽極與陰極分別輕接該第四源/沒 極與-第二電源電壓’該第三電源電壓小於該第—電源電壓。 2、如申請專利範圍第〗項所述之有機發光二極體晝素電 路’其中在一預充電期間中,該第一電晶體、該第三電晶體與 該第五電晶體各自依據其雜訊號而呈現導通,而該第四電晶 體則依據其閘極訊號而呈現關閉,在一寫入期間令,該第一= s曰體與δ亥第二電晶體各自依據其閘極訊號而呈現導通,而該第 四電曰曰體與5亥第五電晶體則各自依據其間極訊號而呈現關 閉,在-發光期財,該第一電晶體與該第三電晶體各自依據 I S1 20 201137825 其閘極訊號而呈現關閉,而該第四電晶體與該第五電晶體則各 自依據其閘極訊號而呈現導通,其中該寫入期間在該預充電期 間之後,而該發光期間在該寫入期間之後。 3如申叫專利範圍第2項所述之有機發光二極體畫素電 路,其中該第一電晶體、該第二電晶體、該第三電晶體、該第 四電a日體與遠第五電晶體皆以一 N型電晶體來實現,且該第 一閘極與該第三閘極皆耦接一掃描訊號’該第四閘極耦接該掃 描讯號之反相訊號,而該第五閘極搞接一致能訊號,其中在該 預充電期間中,該掃描訊號與該致能訊號皆為高準位,而該掃 描sfl號之反相訊號為低準位,在該寫入期間中,該掃描訊號為 高準位,而該掃描訊號之反相訊號與該致能訊號皆為低準位, 在该發光期間中,該掃描訊號為低準位,而該掃描訊號之反相 訊號與該致能訊號皆為高準位。 4、 如申請專利範圍第2項所述之有機發光二極體晝素電 路,其中該第一電晶體、該第二電晶體、該第三電晶體與該第 五電晶體皆以一 N型電晶體來實現,而該第四電晶體則以一 p 型電晶體來實現,且該第一閘極、該第三閘極與該第四閘極皆 • 輕接一掃描訊號,而該第五閘極耦接一致能訊號,其中在該預 充電期間中,該掃描訊號與該致能訊號皆為高準位,在該寫入 期間中’該掃描訊號為高準位,而該致能訊號為低準位,在該 發光期間中,該掃描訊號為低準位’而該致能訊號為高準位。 5、 如申請專利範圍第2項所述之有機發光二極體畫素電 路,其中該第二電晶體、該第四電晶體與該第五電晶體皆以一 N型電晶體來實現,而該第一電晶體與該第三電晶體則皆以一 ?型電晶體來實現,且該第一閘極、該第三閘極與該第四閘極 皆耦接一掃描訊號,而該第五閘極耦接一致能訊號,其中在該 21 201137825 預充電期間中,該掃描訊號為低準位,而該致能訊號為高準 位,在該寫入期間中,該掃描訊號與該致能訊號皆為低準位, 在該發光期間中,該掃描訊號與該致能訊號皆為高準位。 6、 如申請專利範圍第2項所述之有機發光二極體晝素電 路,其中該第一電晶體、該第二電晶體、該第三電晶體、該第 四電晶體與該第五電晶體皆以一薄膜電晶體來實現。 7、 一種有機發光二極體顯示裝置,包括: 一顯示面板,具有一晝素電路,該畫素電路包括: 一第一電晶體,具有一第一閘極、一第一源/汲極與 • 一第二源/汲極,該第一源/汲極適用於接收一顯示資料; 一電容,具有一第一端與一第二端,該第一端耦接 該第二源/汲極; 一第二電晶體,具有一第二閘極、一第三源/汲極與 一第四源/汲極,該第二閘極耦接該電容之該第二端; 一第三電晶體,具有一第三閘極、一第五源/汲極與 一第六源/汲極,該第五源/汲極耦接該第二閘極,該第六源/ 汲極耦接該第三源/汲極; φ 一第四電晶體,具有一第四閘極、一第七源/汲極與 一第八源/汲極,該第七源/汲極耦接該第二源/汲極,該第八源 /汲極耦接該第三源/汲極; 一第五電晶體,具有一第五閘極、一第九源/汲極與 一第十源/汲極,該第九源/汲極耦接一第一電源電壓,該第十 源/汲極耦接該第三源/汲極;以及 一有機發光二極體,其陽極與陰極分別耦接該第四 源/汲極與一第二電源電壓,該第二電源電壓小於該第一電源 電壓; m 22 201137825 一貝料驅動電路’用以提供 一掃描驅動電路,_^、^、貝不貝料,以及 閘極與該第五閘極,用土第1極、該第三閉極、該第四 體、該第三電晶體與 —日預充電期間中控制該第-電晶 關閉,且用以在—寫'/ 日日體導通’並控制該第四電晶體 體導通,並控制該第^控制該第—電晶體與該第三電晶 一發光期間中控制該第與該第五電晶體關閉’亦用以在 該第四電晶體與該‘五電曰該第三電晶體關閉’並控制- the third transistor 'has a third gate, a fifth source / drain pole = two = five jobs - connects the (four) pole 'the sixth one to the fourth transistor, has a - fourth gate, - the first a seventh source/drain plate, the seventh source/汲_ is connected to the second source/record, the eighth source is coupled to the third source/drain; 4 the fifth transistor has a fifth interpole, - ninth source / no pole and ten source /; and pole, the ninth source / no pole face - the first - power voltage, the drain consumes the third source / no pole; and ', - organic light-emitting diode The body 'the anode and the cathode are respectively connected to the fourth source/no pole and the second power source voltage', and the third power source voltage is less than the first power source voltage. 2. The organic light-emitting diode device as described in claim </ RTI> wherein the first transistor, the third transistor and the fifth transistor are each based on a miscellaneous period The signal is turned on, and the fourth transistor is turned off according to the gate signal. During a writing period, the first=s body and the second transistor are respectively represented according to the gate signal thereof. Turning on, and the fourth electric body and the 5th fifth crystal are respectively turned off according to the interpole signal thereof, and the first transistor and the third transistor are respectively according to I S1 20 201137825 The gate signal is turned off, and the fourth transistor and the fifth transistor are each turned on according to the gate signal thereof, wherein the writing period is after the pre-charging period, and the light-emitting period is during the writing period. After the entry period. 3. The organic light emitting diode pixel circuit of claim 2, wherein the first transistor, the second transistor, the third transistor, the fourth a a body and the far end The fifth transistor is implemented by an N-type transistor, and the first gate and the third gate are coupled to a scan signal, wherein the fourth gate is coupled to the inverted signal of the scan signal, and the fourth gate is coupled to the inverted signal of the scan signal. The fifth gate is connected to the consistent signal, wherein the scan signal and the enable signal are both at a high level during the pre-charge period, and the inverted signal of the scan sfl is a low level at the write During the period, the scan signal is at a high level, and the inverted signal of the scan signal and the enable signal are both at a low level. During the illumination period, the scan signal is at a low level, and the scan signal is reversed. Both the phase signal and the enable signal are of high standard. 4. The organic light emitting diode halogen circuit of claim 2, wherein the first transistor, the second transistor, the third transistor, and the fifth transistor are both N-type The transistor is implemented by a p-type transistor, and the first gate, the third gate, and the fourth gate are both connected to a scan signal, and the first The five gates are coupled to the uniform signal, wherein the scan signal and the enable signal are both at a high level during the precharge period, and the scan signal is at a high level during the writing period, and the enablement The signal is at a low level. During the illumination period, the scan signal is at a low level and the enable signal is at a high level. 5. The organic light emitting diode pixel circuit of claim 2, wherein the second transistor, the fourth transistor, and the fifth transistor are implemented by an N-type transistor, and The first transistor and the third transistor are both implemented by a transistor, and the first gate, the third gate and the fourth gate are coupled to a scan signal, and the first The five gates are coupled with a uniform signal, wherein during the 21 201137825 precharge period, the scan signal is at a low level, and the enable signal is a high level. During the write period, the scan signal and the result are The signal can be at a low level, and the scanning signal and the enabling signal are both at a high level during the lighting period. 6. The organic light emitting diode halogen circuit according to claim 2, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth electrode The crystals are all realized by a thin film transistor. 7. An organic light emitting diode display device comprising: a display panel having a pixel circuit, the pixel circuit comprising: a first transistor having a first gate, a first source/drain a second source/drain, the first source/drain is adapted to receive a display data; a capacitor having a first end and a second end, the first end coupled to the second source/drain a second transistor having a second gate, a third source/drain and a fourth source/drain, the second gate coupled to the second end of the capacitor; a third transistor Having a third gate, a fifth source/drain, and a sixth source/drain, the fifth source/drain is coupled to the second gate, and the sixth source/drain is coupled to the first Three source/drain electrodes; φ a fourth transistor having a fourth gate, a seventh source/drain and an eighth source/drain, the seventh source/drain is coupled to the second source/ a drain, the eighth source/drain is coupled to the third source/drain; a fifth transistor having a fifth gate, a ninth source/drain, and a tenth source/drain Ninth source/dippole coupling a power source voltage, the tenth source/drain is coupled to the third source/drain; and an organic light emitting diode, wherein the anode and the cathode are respectively coupled to the fourth source/drain and a second power voltage, The second power supply voltage is less than the first power supply voltage; m 22 201137825 a bucker drive circuit 'to provide a scan drive circuit, _^, ^, beibei, and the gate and the fifth gate, the soil The first pole, the third closed pole, the fourth body, and the third transistor control the first-electro-crystal shutdown during the pre-charging period, and are used to control and write the '/day body conduction' The fourth transistor is turned on, and controls the first transistor to control the first transistor and the third transistor to control the fifth transistor to be turned off during the light-emitting period, and is also used in the fourth transistor The 'five electric 曰 the third transistor is turned off' and controlled 電期間之後,而Hi Ba導通’其中該寫入期間在該預充 發光期間在該寫人期間之後。 置,i圍第7項所述之錢發光二極體顯示裝 描驅動電路提供-掃描訊號至該第一二該l . °虎之反相訊唬與一致能訊號至該第四閘極與 其中在該預充電期間中,該掃描訊號與該致能訊 雜’岐翻錢之反相喊為低雜,在該寫入 j間中,崎描訊料紳位,而該掃描職之反相訊號與該 月t*訊號自為低準位,在該發光期間巾,該掃描訊號為低準 位,而該掃描訊號之反相訊號與該致能訊號皆為高準位。 P 9、如申請專利範圍第7項所述之有機發光二極體顯示裝 置’其中該第-電晶體、該第二電晶體、該第三電晶體與該第 五電晶體皆以一 N型電晶體來實現,而該第四電晶體則以一 型電晶體來實現’且該掃描驅動電路提供一掃描訊號至該第 閘極、該第三閘極與該第四閘極,並提供一致能訊號至該第五 閘極’其中在該預充電期間中,該掃描訊號與該致能訊號皆為 向準位’在該寫入期間中’該婦描訊號為高準位,而該致能訊 m 23 201137825 =:準:該發光期間中,該掃描訊號為低準位,而該致After the electrical period, and Hi Ba is turned on, wherein the writing period is after the writing period during the pre-charging period. The money-emitting diode display device described in item 7 of the present invention provides a scanning driving circuit to provide a scan signal to the first two of the first phase of the antenna signal and the uniform energy signal to the fourth gate. In the pre-charging period, the scanning signal is inferior to the inversion of the enabling message, and in the writing j, the scanning information is clamped, and the scanning job is reversed. The phase signal and the monthly t* signal are at a low level. During the illumination period, the scanning signal is at a low level, and the inverted signal of the scanning signal and the enabling signal are both at a high level. The organic light emitting diode display device of claim 7, wherein the first transistor, the second transistor, the third transistor, and the fifth transistor are all N-type The transistor is implemented by a type of transistor, and the scan driving circuit provides a scan signal to the first gate, the third gate and the fourth gate, and provides a uniform The signal can be sent to the fifth gate ′, wherein during the pre-charging period, the scan signal and the enable signal are both in a position of 'the writing period' and the woman is marked as a high level, and能讯 m 23 201137825 =: quasi: during the illumination period, the scan signal is low, and so 二”請專利範圍第7項所述之有機發光二極體顯示裝 置’,、4第—電晶體、該第四電晶體與該第五電晶體皆以一 N变電晶體來實現,而該第一電晶體與該第三電晶體則皆以一 Ρί電晶體來實現,且該掃描驅動電路提供一掃描訊號至該第 一閘極、該第三閘極與該第四閘極,並提供一致能訊號至該第 五閘極’其中在該預充電期間中’該掃描訊號為低準位,而該 致能訊號為高準位,在該寫入期間中,該掃描訊號與該致能訊 號皆為低準位,在該發光期間該掃描訊號與該致能訊號皆 為高準位。 11、如申請專利範圍第7項所述之有機發光二極體顯示裝 置,其中該第一電晶體、該第二電晶體、該第三電晶體、該第 四電晶體與該第五電晶體皆以一薄膜電晶體來實現。 八、圖式:[2] The organic light emitting diode display device of the seventh aspect of the patent scope, the fourth transistor, the fourth transistor and the fifth transistor are all realized by an N-transistor crystal, and the The first transistor and the third transistor are both implemented by a transistor, and the scan driving circuit provides a scan signal to the first gate, the third gate and the fourth gate, and provides a consistent signal to the fifth gate 'where the scan signal is at a low level during the precharge period, and the enable signal is a high level during which the scan signal and the enable The signal is a low level, and the scanning signal and the enabling signal are both at a high level during the illuminating period. 11. The organic light emitting diode display device according to claim 7, wherein the first electric The crystal, the second transistor, the third transistor, the fourth transistor and the fifth transistor are all implemented by a thin film transistor. I Si 24 ·I Si 24 ·
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9257074B2 (en) 2014-05-05 2016-02-09 Au Optronics Corp. Pixel compensation circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257074B2 (en) 2014-05-05 2016-02-09 Au Optronics Corp. Pixel compensation circuit

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