201135789 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種溫控開關、應用該溫控開關之方法及使 用該溫控開關之報警系統。 【先前技術】 [0002] 於一些要求工作溫度穩定之場合，如生產車間、反應爐 等，需要一溫控開關來監控工作溫度之變化。該溫控開 關不僅能感測該該工作溫度，還能夠根據該工作溫度之 變化，於該工作溫度之變化大於或小於一設定值時，使 該溫控開關保持於一個固定之工作狀態，從而使與該溫 控開關連接之一報警系統能夠保持於報警狀態，即便該 場合之工作溫度之變化消除》 [0003]為使該溫控開關能夠於監測到溫度變化時保持於固定之 工作狀態，該溫控開關不僅包括一感測工作溫度之溫度 感測器，還包括一具邏輯運算能力之集成晶片或電路。 該集成晶片或電路根據溫幾物器感測到之溫度訊號判 斷該工作溫度之變化是否大於等於該設定值。當該工作 溫度之變化大於或小於該設定值時，該集成晶片發出操 作指令並使該溫控開關保持於固定之工作狀態。 剛從上賴述可看丨，為使該溫控％隨夠監測到工作溫 X之支化而1作於固定之工作狀態’該溫控開關必須包 括複雜之賴運算元件，如上述钱W，從而使得該 溫控開關所包括之器件較多，結構比較複雜。 【發明内容】 _5]㈣於此’提供—種結構簡單之溫控開關、應用該溫控 099111028 表單編號麵 第4㈣291 0992019365-0 201135789 [0006] Ο [0007] Ο [0008] 099111028 開關之方法及使用該溫控開關之報警系統實為必要。 一種溫控開關，其包括一雙穩態電阻元件，該雙穩態電 阻元件包括一高分子載體及分散於該高分子載體中之複 數金屬顆粒。該雙穩態電阻元件具有一低阻態與一高阻 態兩個工作狀態。於低阻態，該複數金屬顆粒表面形成 有金屬導電絲，該複數金屬顆粒通過該金屬導電絲形成 一導電通路。於高阻態，該複數金屬顆粒表面之金屬導 電絲斷裂，使該導電通路斷開。該低阻態之觸發訊號為 一激勵電場。該高阻態之觸發訊號為一溫差訊號，該溫 ：- . ' - - . 差訊號為該導電通路形成時直接作用於該雙稳態電阻元 件之一初始溫度與該導電通路斷開時直接作用於該雙穩 態電阻元件之一觸發溫度之絕對差值。 一種溫控開關，其包括一雙穩態電阻元件，該雙穩態電 阻元件包括一高分子載體及分散於該高分子載體中之複 數金屬顆粒。一激勵電場產生單元’用於產生一激勵電 場使該複數金屬顆粒形成一導電通路並記憶一初始溫度 。一溫差訊號產.生單元’用於產生一大於等於一最小溫 差之溫差訊號使該導電通路斷開。 一種溫控開關，其包括一雙穩態電阻元件、一發出激勵 電場之激勵電場產生單元及一發出溫差訊號之温差訊號 產生單元。該雙穩態電阻元件包括一高分子載體及分散 於該高分子載體中之複數金屬顆粒。該激勵電場作用於 該雙穩態電阻元件使該複數金屬顆粒形成一導電通路並 使該雙穩態電阻元件記憶一初始溫度；該溫差訊號產生 單元用於產生一大於等於一最小溫差之溫差訊號使該導 表單編號Α0101 第5頁/共29頁 0992019365-0 201135789 電通路斷開。 [0009] —種應用溫控開關之方法，包括以下步驟：提供一雙穩 態電阻元件，該雙穩態電阻元件包括一高分子載體及分 散於該高分子載體中之複數金屬顆粒；當需要監測該溫 控開關所處環境之工作溫度變化時，於初始溫度T1施加 一激勵電場作用於該雙穩態電阻元件，使該雙穩態電阻 元件處於並維持低阻態；當該雙穩態電阻元件之溫度變 化超過最小溫差ΛΤ時，該雙穩態電阻元件由低阻態變成 高阻態並維持於高阻態。 [0010] 一種報警系統，其包括一報警裝置及一溫控開關。該溫 控開關用於控制該報警裝置報警。該溫控開關包括一雙 穩態電阻元件、一激勵電場產生單元及溫差訊號產生單 元。該雙穩態電阻元件包括一高分子載體及分散於該高 分子載體中之複數金屬顆粒。該激勵電場產生單元，用 於施加一激勵電場使該雙穩應電阻元件工作於低阻態。 該溫差訊號產生單元，用於產生一溫差訊號使該雙穩態 電阻元件工作於高阻態。 [0011] 相較於先前技術，該溫控開關中之雙穩態電阻元件通過 該激勵電場與該溫差訊號於低阻態與高阻態之間進行轉 換，且於感應到該溫差訊號後自動切換到高阻態。從而 使該溫控開關不需要結構複雜之邏輯運算元件，僅需要 一雙穩態電阻元件就能監測該溫控開關所處環境之工作 溫度之變化，且能於監測到該工作溫度之變化時保持於 固定之工作狀態，如高阻狀態，從而使得該溫控開關結 構簡單。進一步地，該雙穩態電阻元件於該激勵電場作 099111028 表單編號A0101 第6頁/共29頁 0992019365-0 201135789 用下又工作於低阻態，可用來再次監測該溫差訊號。 【實施方式】 [0012] [0013] [0014] Ο ❹ 099111028 以下將結合附圖對本發明實施例進行詳細說明。 請參見圖1，本發明實施例提供一種溫控開關1 〇 〇，其包 括一雙穩態電阻元件10、一激勵電場產生單元20及一溫 差訊號產生單元30。 請參見圖2至圖4，該雙穩態電阻元件1〇為一複合材料， 其包括複數金屬顆粒11及一而分子載體12，該複數金屬 顆粒11分散於高分子載體12争。該雙穩態電阻元件1〇具 有一低阻態與一高阻態兩個工作狀態。於低阻態，該複 數金屬顆粒11表面形成有金屬導電絲13 (Filament)， 該複數金屬顆粒11通過該金屬導電絲13.形...成一導電通路 。於高阻態，該複數金屬顆粒11表面之金屬導電絲13斷 裂’使該導電通路斷開。該高分子載體12為具有明顯地 熱脹冷縮效應之絕緣材料，用於支撐該金屬顆粒11，並 於受熱或受冷時產生熱脹冷縮。於本實施例中，金屬顆 粒11為粒徑於1微米微米左右之鎳顆粒，該鎳顆粒於該 雙穩態電阻元件10中之體積比於之間；該高分子 載體12為具有較大熱膨脹係數之矽橡膠，用於支撐該金 屬顆粒11，具體地，該高分子載體12為與鎳顆粒之熱膨 脹係數之比值大於等於40之聚二甲基矽氧烷（PDMS: PolyDimethylsiloxane);該雙穩態電阻元件10於高阻 態時之電阻與於低阻態時之電阻之比值大致於103:1與 1〇4:1之間。 該激勵電場產生單元20用於產生一激勵電場，該激勵電 表單編號A0101 第7頁/共29頁 0992019365-0 [0015] 201135789 場直接作用於雙穩態電阻元件ίο，使該雙穩態電阻元件 10工作於低阻態，即該激勵電場為該雙穩態電阻元件10 工作於低阻態之觸發訊號。具體地，請參閱圖3，該雙穩 態電阻元件1 0種之複數金屬顆粒11於該激勵電場之激勵 下從表面延伸出複數金屬導電絲13，從而使相鄰之兩個 金屬顆粒11之間通過金屬導電絲相互連接，從而使相互 電連接之金屬顆粒11之個數增多，進而形成一個導電通 路，該雙穩態電阻元件10之電阻產生躍遷，使該雙穩態 電阻元件1 0工作於低阻態。於本實施例中，該激勵電場 產生單元20為一脈衝訊號產生裝置，該激勵電場為一脈 衝電場。該脈衝電場之寬度於1毫秒~10秒之間，強度於 0. 3伏特每毫米〜3伏特每毫米之間。該激勵電場可通過任 意方式載入於該雙穩態電阻元件10，如將該雙穩態電阻 元件10放置於一具有該激勵電場之環境中，如電容中。 [0016] 該溫差訊號產生單元30用於產生一溫差訊號使該雙穩態 電阻元件10發生溫度變化。該溫差訊號為直接作用於該 雙穩態電阻元件10之熱量變化。當該溫差訊號超過一最 小溫差時，即該雙穩態電阻元件10之溫度變化的絕對值 大於一預定值時，該雙穩態電阻元件10工作於高阻態， 即該溫差訊號為使該雙穩態電阻元件10工作於高阻態之 觸發訊號。定義該導電通路形成時該雙穩態電阻元件10 之溫度為一初始溫度，該溫差訊號產生單元30產生溫差 訊號，使該雙穩態電阻元件10工作於高阻態時，該雙穩 態電阻元件10溫度為一觸發溫度，該溫差訊號為該觸發 溫度與初始溫度之絕對差值。譬如於該導電通路形成時 099111028 表單編號A0101 第8頁/共29頁 0992019365-0 201135789 4初始也度為2〇度，而溫差訊號產生單元如作用於該雙 穂怨電阻元件1〇後，使該雙穩態電阻元件1〇工作於高阻 匕該觸發溫度為15度，則該溫差訊號為5度。即，該溫 差訊號為該導電通路於形成與斷開時該雙穩態電阻元件 10所處環境之溫度變化強度或溫度變化值。另外，依據 形成導電通路時該雙穩態電阻元件10之溫度之不同，該 雙穩態電阻元件10可具有不同之初始溫度，即上述該雙 穩態電阻元件10形成導電通路時之初始溫度係可變化的 。當該雙穩態電阻元件10於不同之溫度下被激勵電場多 次觸發形成導電通路時’該雙穩態電阻元件1 〇即可具有 複數數值不等之初始溫度，又可具有複數數值相等之初 始溫度。即當該雙穩態電阻元件1 〇於高阻態與低阻態之 間多次切換時具有之初始溫度之數值係可變的。譬如， 該雙穩態電阻元件10於第一次工作於低阻態時之初始溫 度為20度，切換到高阻態時之觸發溫度為15度。此時， 若於15度時給該雙穩態電阻元件1〇施加一激勵電場使該 雙穩態電阻元件10工作於低阻態，則該雙穩態電阻元件 10第二次工作於低阻態時之初始溫度為15度。故，該初 始溫度是根據施加一激勵電場使該雙穩態電阻元件10工 作於低阻態時雙穩態電阻元件10之溫度而確定之，係可 變化的。另外’該溫差訊號之產生方式及其採用之溫差 訊號產生單元30之構成不限，只要能使直接作用於該雙 穩態電阻元件1〇溫度產生變化即可。譬如，該溫差訊號 可為放置該雙穩態電阻元件10之空間内之環境溫度之變 化，如反應爐中氣體溫度之變化、自然環境中氣溫之變 化或生產車間之溫度變化等；也可為直接作用於該雙穩 099111028 表單編號A0101 第9頁/共29頁 0992019365-0 201135789 〜、電阻兀件1G上之一，該熱源包括靠近該雙穩態電阻 元件10之電子70件、⑭、射於該雙穩態電阻元件10之加熱 燈或浸泡該雙穩態·元件1G之液體等。 [0017] [0018] 於工作時’該雙穩態電阻元件1 0於不同之初始溫度下對 應有不同之最小溫差。當該雙穩態電阻元件1 〇於一初始 溫度接收到一激勵電場時，該複數金屬顆粗11形成一導 電通路，此時，該雙穩態電阻元件10工作於低阻態。此 時，該雙穩態電阻元件1 〇於該初始溫度下具有一個對應 之最小溫差。請參見圖4 ’當該雙穩態電阻元件10接收到 一大於該最小溫差之溫差訊號時’該雙穩態電阻元件1〇 於該溫差訊號之作用下產生熱脹冷縮’引起該雙穩態電 阻元件10中分子鏈之滑動’從而破壞導電通路’使該雙 穩態電阻元件10工作於高阻態。具體地由於該高分子 載體12之熱膨脹係數遠大於該金屬顆粒11之熱膨脹係數 ，該高分子載體12於該溫差訊號下產生熱骑·冷縮效應， i ....... . ； .. ：. 使該複數金屬顆粒11之間產生相對滑移，使該金屬顆粒 11之間之距離產生變化，從而使该彳复數金屬導電絲13斷 裂。且，該溫差訊號對該導電通路之作用為非可逆之， 即便係該溫差訊號撤銷，或者再次施加不同之溫差訊號 ，該導電通路依然於斷開狀態，使該雙穩態電阻元件10 依然工作於高阻態。 請參閱圖5，為本實施例中雙穩態電阻元件10電連接一電 源時之電流變化曲線示意圖。具體之，於個初始溫度 大致為24攝氏度時給該雙穩態電阻兀件1 〇 —教勵電場使 該雙穩態電阻元件10工作於低阻態，此時，該雙穩態電 099111028 表單編號A0101 第10頁/共29買 0992019365-0 201135789 Ο 阻元件10之電流大於等於0. 15毫安培，輸出一個高電平 訊號；同時，記錄該初始溫度，此時，與初始溫度對應 之最小溫差為1. 4攝氏度。而當作用於該雙穩態電阻元件 10之溫度升高或降低1.4攝氏度以上時，即該溫差訊號大 於等於最小溫差時，該雙穩態電阻元件10工作於高阻態 ，此時，該雙穩態電阻元件10之電流基本為0毫安培培， 輸出一個低電平訊號。請參閱圖6，與圖5中之雙穩態電 阻元件10之測試原理相似，用一激勵電場使該雙穩態電 阻元件10工作於低阻態時，該初始溫度大致為14度，此 時，與初始溫度對應之最小溫差為2攝氏度。當該雙穩態 電阻元件1 0所處環境之溫度升高或降低2攝氏度以上時， 該雙穩態電阻元件10中之導電通路斷開，工作於高阻態 。從上述描述還可看出，該最小溫差為使該導電通路斷 開之最小溫差訊號。 [0019] Ο 除了本實施例中所列舉之材料及結構，該雙穩態電阻元 件10中金屬顆粒11之種類、粒徑、於該雙穩態電阻元件 10中之體積比及該高分子載體12之種類並沒有特別限制 。只要能滿足該金屬顆粒11於一激勵電場下才能形成導 電通路，且該導電通路於該高分子載體12之熱脹冷縮下 能夠斷開即可。具體之，該金屬顆粒11還可為金、銀、 錫、鐵、銅或鉑等，該金屬顆粒11之粒徑範圍可為2奈米 到20微米，該金屬顆粒11於雙穩態電阻元件10中所佔之 體積比可為5%到40%。該高分子載體12還可為除聚二曱基 矽氧烷外之其他矽橡膠系列；該高分子載體12還可為聚 合物，如聚乙烯乙二醇、聚丙烯；該高分子載體12還可 099111028 表單編號Α0101 第11頁/共29頁 0992019365-0 201135789 為聚酯、環氧樹脂系列、缺氧膠系列或壓克力膠系列等 。該雙穩態電阻元件1 〇於高阻態時之電阻與於低阻態時 之電阻之比值大於102:1。進一步地，請參見圖7，該溫 控開關100還可包括兩個電極40，該兩個電極40分佈於該 雙穩態電阻元件1 0相對之兩個表面，如該雙穩態電阻元 件10為一膜狀結構時，該兩個電極40可將該膜狀結構夾 持形成一三明治結構。該溫控開關100可通過該兩個電極 與外部電路電連接，如一控制電路或一報警裝置等。為 操作方便，該激勵電場產生單元20可通過該兩個電極40 與該雙穩態電阻元件10電連接。該電極40之材料不限， 包括金屬、導電膠或金屬性奈米碳管等。 [0020] 該溫控開關10 0中之雙穩態電阻元件10通過該激勵電場與 該溫差訊號於低阻態與高阻態之間進行轉換，且於感應 到該溫差訊號後自動切換到高阻態。從而使該溫控開關 100不需要結構複雜之邏輯運算元件，僅需要一雙穩態電 阻元件1 0就能監測該溫控開關1 0 0所處環境之工作溫度之 變化，且能於監測到該工作溫度之變化時保持於固定之 工作狀態，如高阻狀態，從而使得該溫控開關100結構簡 單。進一步地，該雙穩態電阻元件10於該激勵電場作用 下又工作於低阻態，可用來再次監測該溫差訊號。 [0021] 請參見圖8，為應用該溫控開關100之方法，包括以下步 驟。 [0022] 步驟S101，提供一雙穩態電阻元件10，該雙穩態電阻元 件10包括一高分子載體12及分散於該高分子載體1 2中之 複數金屬顆粒11。 099111028 表單編號A0101 第12頁/共29頁 0992019365-0 201135789 [0023] [0024] Ο [0025] 〇 [0026] [0027] =驟S!G2，當需要監測該溫控開關i⑹所處環境之工作溫 ^變化時，於初始溫度Tm加—激勵電場作用於該雙穩 =電阻元件1()，使該雙誠電阻元件1()處於並維持低障 態。該初始溫度了丨為施加該激勵電場時該雙穩態電阻元 件1 Q之溫度。 步驟S103，當該雙穩態電阻元件1〇之溫度變化超過最小 溫差ΔΤ時’該雙穩態電阻元件1〇由低阻態變成高阻態並 維持於高阻態。即，當該雙穩態電阻元件1 〇之溫度變化 I T2-T1丨 ΛΤ時，該雙穩態電阻元件10之工作狀態發 生變換並固定工作於高醉態。 由上述描述可看出，於應用該溫控開關100時，可先確定 一個最佳工作溫度，如20攝氏度。於該最佳工作溫度對 該雙穩態電阻元件10進行電場激勵使其工抑於低阻態。 此時，該溫控開關100即可用來監控所處環境之工作溫度 變化。而，當該工作溫度上升或者下降之幅度大於時 ，該雙穩態電阻元件10自動切換到高阻態’直到下一個 激勵電場之激勵。 請參見圖9，為使用本發明實施例提供之溫控開關100之 一種報警系統200 ’該報警系統200還包括一電源210及 一報警裝置220。 該電源210分別與該溫控開關1〇〇及報警裝置220電連接 組成一回路。該電源21〇用於為該回路提供電壓’且該電 源210於該雙穩態電阻元件10所產生之電場不會觸發該雙 穩態電阻元件10使該雙穩態電阻元件10工作於高阻態。 099111028 表單編號A0101 第13頁/共29頁 0992019365-0 201135789 [0028] 該溫控開關用於控制該報警裝置220報警。具體地，當該 激勵電場產生單元2 0產生一激勵電場使該溫控開關1 0 0工 作於低阻態時，該報警裝置220用來監控溫差訊號產生單 元30之溫差變化。當該溫差訊號產生單元30產生一溫差 訊號使該溫控開關1 0 0工作於高阻態時該報警裝置2 2 0發 出一報警訊號。即該報警裝置220僅於該溫控開關100記 憶有溫差訊號時發出報警訊號，直到該溫控開關100接收 到一激勵電場。 [0029] 該報警裝置220與該溫控開關100可串聯於該回路中，也 可並聯於該回路中。於本實施例中，該報警裝置220可與 該溫控開關100串聯，當該溫控開關100工作於高阻態時 ，該回路電流降低，從而使該報警裝置220發出報警訊號 〇 [0030] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施例 ，自不能以此限制本案之申請專利範圍。舉凡習知本案 技藝之人士援依本發明之精神所作之等效修飾或變化， 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0031] 圖1為本發明實施例提供之溫控開關之結構示意圖。 [0032] 圖2為圖1中溫控開關中之雙穩態電阻元件之結構示意圖 〇 [0033] 圖3為圖2中之雙穩態電阻元件形成有導電通路之結構示 意圖。 099111028 表單編號A0101 第14頁/共29頁 0992019365-0 201135789 [0034] 圖4為圖3中之雙穩遙電阻元件於導電通路斷開時之結構 示意圖。 [0035] 圖5為本發明實施例提供之初始工作溫度於24攝氏度之溫 • 控開關外接一電源時之電流變化曲線示意圖。 [0036] 圖6為本發明實施例提供之初始工作溫度於14攝氏度之溫 控開關外接一電源時之電流變化曲線示意圖。 [0037] 圖7為本發明實施提供之另一種溫控開關於未包括溫差產 生裝置之結構示意圖。 ❹ [0038] 圖8為應用本發明實施例提供之溫控開關之流程示意圖。 [0039] 圖9為具本發明實施例提供之溫控開關之一種報警系統之 連接示意圖。 【主要元件符號說明】 [0040] 溫控開關：100 [0041] 雙穩態電阻元件：10 q [0042] 金屬顆粒：11 [0043] 高分子載體：12 [0044] 金屬導電絲：13 [0045] 激勵電場產生單元：20 [0046] 溫差訊號產生單元：30 [0047] 電極：40 [0048] 報警系統：2 0 0 099111028 表單編號A0101 第15頁/共29頁 0992019365-0 220 201135789 [0049] [0050] 電源：210 報警裝置： 099111028 表單編號A0101 第16頁/共29頁 0992019365-0201135789 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a temperature control switch, a method of applying the temperature control switch, and an alarm system using the temperature control switch. [Prior Art] [0002] In some applications where the operating temperature is stable, such as a production plant, a reaction furnace, etc., a temperature control switch is required to monitor the change in operating temperature. The temperature control switch can not only sense the working temperature, but also maintain the temperature control switch in a fixed working state when the change of the working temperature is greater than or less than a set value according to the change of the working temperature. The alarm system connected to the temperature control switch can be kept in an alarm state even if the change of the operating temperature in the case is eliminated. [0003] In order to enable the temperature control switch to maintain a fixed working state when the temperature change is detected, The temperature control switch includes not only a temperature sensor that senses the operating temperature, but also an integrated chip or circuit with logic operation capability. The integrated chip or circuit determines whether the change in the operating temperature is greater than or equal to the set value based on the temperature signal sensed by the temperature detector. When the change in operating temperature is greater or less than the set value, the integrated wafer issues an operational command and maintains the temperature controlled switch in a fixed operational state. Just from the above, you can see that the temperature control is enough to monitor the branching of the working temperature X and the fixed working state. The temperature control switch must include complex computing components, such as the above money W. Therefore, the temperature control switch includes more devices and the structure is more complicated. [Description of the Invention] _5] (d) This provides a simple temperature control switch, the application of the temperature control 099111028 form number face 4 (four) 291 0992019365-0 201135789 [0006] 0007 [0007] 0008 [0008] 099111028 switch method and An alarm system using this temperature control switch is necessary. A temperature controlled switch comprising a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. The bistable resistive element has a low impedance state and a high impedance state. In the low resistance state, a metal conductive wire is formed on the surface of the plurality of metal particles, and the plurality of metal particles form a conductive path through the metal conductive wire. In the high resistance state, the metal wire on the surface of the plurality of metal particles is broken to break the conductive path. The trigger signal of the low resistance state is an excitation electric field. The high-impedance trigger signal is a temperature difference signal, and the temperature is - - . . - - . The difference signal is directly applied to the initial temperature of the bistable resistive element when the conductive path is formed, and the conductive path is directly disconnected from the conductive path. The absolute difference in the trigger temperature of one of the bistable resistive elements. A temperature controlled switch comprising a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. An excitation electric field generating unit ' is used to generate an excitation electric field to form the plurality of metal particles into a conductive path and to memorize an initial temperature. A temperature difference signal is generated by generating a temperature difference signal equal to or greater than a minimum temperature difference to disconnect the conductive path. A temperature control switch includes a bistable resistive element, an excitation electric field generating unit that emits an electric field, and a temperature difference signal generating unit that emits a temperature difference signal. The bistable resistive element comprises a polymer carrier and a plurality of metal particles dispersed in the polymer carrier. The excitation electric field acts on the bistable resistive element to form the conductive metal path to form a conductive path and the bistable resistive element memorizes an initial temperature; the temperature difference signal generating unit is configured to generate a temperature difference signal greater than or equal to a minimum temperature difference Make the form number Α0101 Page 5 / Total 29 page 0992019365-0 201135789 The electrical path is disconnected. [0009] A method for applying a temperature-controlled switch, comprising the steps of: providing a bistable resistive element comprising a polymer carrier and a plurality of metal particles dispersed in the polymer carrier; When monitoring the operating temperature change of the environment in which the temperature control switch is located, an excitation electric field is applied to the bistable resistance element at the initial temperature T1, so that the bistable resistance element is in and maintains a low resistance state; when the bistable state When the temperature of the resistive element changes exceeds the minimum temperature difference ,, the bistable resistive element changes from a low resistance state to a high resistance state and is maintained in a high resistance state. [0010] An alarm system includes an alarm device and a temperature control switch. The temperature control switch is used to control the alarm of the alarm device. The temperature control switch includes a dual steady state resistance element, an excitation electric field generating unit and a temperature difference signal generating unit. The bistable resistive element comprises a polymeric support and a plurality of metal particles dispersed in the polymeric carrier. The excitation electric field generating unit is configured to apply an exciting electric field to operate the bistable resistive element in a low resistance state. The temperature difference signal generating unit is configured to generate a temperature difference signal to operate the bistable resistance element in a high resistance state. [0011] Compared with the prior art, the bistable resistive element in the temperature control switch is converted between the low resistance state and the high resistance state by the excitation electric field and the temperature difference signal, and automatically after sensing the temperature difference signal. Switch to high impedance. Therefore, the temperature control switch does not need a complicated logic operation component, and only needs a bistable resistance component to monitor the change of the working temperature of the environment in which the temperature control switch is located, and can monitor the change of the working temperature. It is kept in a fixed working state, such as a high resistance state, so that the temperature control switch has a simple structure. Further, the bistable resistive element is used in the excitation field as 099111028 Form No. A0101 Page 6 of 29 0992019365-0 201135789 The lower working state is used to monitor the temperature difference signal again. [Embodiment] [0012] [0014] The embodiment of the present invention will be described in detail below with reference to the accompanying drawings. Referring to FIG. 1, an embodiment of the present invention provides a temperature control switch 1 〇 〇, which includes a bistable resistive element 10, an excitation electric field generating unit 20, and a temperature difference signal generating unit 30. Referring to FIGS. 2 to 4, the bistable resistive element 1 is a composite material comprising a plurality of metal particles 11 and a molecular carrier 12 dispersed in a polymer carrier. The bistable resistive element 1 has two operating states of a low resistance state and a high resistance state. In the low resistance state, the surface of the plurality of metal particles 11 is formed with a metal conductive wire 13 through which the plurality of metal particles 11 form a conductive path. In the high resistance state, the metal conductive wire 13 on the surface of the plurality of metal particles 11 is broken, and the conductive path is broken. The polymer carrier 12 is an insulating material having a remarkable thermal expansion and contraction effect for supporting the metal particles 11 and causing thermal expansion and contraction when heated or cooled. In the present embodiment, the metal particles 11 are nickel particles having a particle diameter of about 1 micrometer and the nickel particles are in a volume ratio between the bistable resistive elements 10; the polymer carrier 12 has a large thermal expansion. a coefficient of ruthenium rubber for supporting the metal particles 11. Specifically, the polymer carrier 12 is a polydimethylsiloxane (PDMS: PolyDimethylsiloxane) having a ratio of thermal expansion coefficient of nickel particles of 40 or more; The ratio of the resistance of the state resistance element 10 in the high resistance state to the resistance in the low resistance state is approximately between 103:1 and 1〇4:1. The excitation electric field generating unit 20 is configured to generate an excitation electric field, the excitation electric form number A0101, page 7 / 29 pages 0992019365-0 [0015] 201135789 field directly acts on the bistable resistance element ίο, the bistable resistance The component 10 operates in a low resistance state, that is, the excitation electric field is a trigger signal that the bistable resistance element 10 operates in a low resistance state. Specifically, referring to FIG. 3, the plurality of metal particles 11 of the bistable resistive element 10 are extended from the surface by the excitation electric field to extend the plurality of metal conductive wires 13 so that the adjacent two metal particles 11 The metal conductive wires are connected to each other to increase the number of metal particles 11 electrically connected to each other, thereby forming a conductive path, and the resistance of the bistable resistance element 10 generates a transition, so that the bistable resistance element 10 operates. In the low resistance state. In the embodiment, the excitation electric field generating unit 20 is a pulse signal generating device, and the exciting electric field is a pulse electric field. The pulse electric field has a width of between 1 millisecond and 10 seconds, and an intensity of between 0.3 and 5 volts per millimeter to 3 volts per millimeter. The excitation field can be loaded into the bistable resistive element 10 by any means, such as placing the bistable resistive element 10 in an environment having the exciting electric field, such as a capacitor. [0016] The temperature difference signal generating unit 30 is configured to generate a temperature difference signal to cause a temperature change of the bistable resistance element 10. The temperature difference signal is a change in heat directly acting on the bistable resistive element 10. When the temperature difference signal exceeds a minimum temperature difference, that is, when the absolute value of the temperature change of the bistable resistance element 10 is greater than a predetermined value, the bistable resistance element 10 operates in a high resistance state, that is, the temperature difference signal is such that The bistable resistive element 10 operates in a high impedance state trigger signal. Defining that the temperature of the bistable resistive element 10 is an initial temperature when the conductive path is formed, the temperature difference signal generating unit 30 generates a temperature difference signal, and when the bistable resistive element 10 operates in a high resistance state, the bistable resistance The temperature of the component 10 is a trigger temperature, and the temperature difference signal is an absolute difference between the trigger temperature and the initial temperature. For example, when the conductive path is formed, 099111028, Form No. A0101, Page 8 of 29, 0992019365-0, 201135789 4, the initial degree is 2 degrees, and the temperature difference signal generating unit acts on the double-resistance resistance element, The bistable resistive element 1 〇 operates at a high resistance, and the trigger temperature is 15 degrees, and the temperature difference signal is 5 degrees. That is, the temperature difference signal is a temperature change intensity or a temperature change value of the environment in which the bistable resistive element 10 is placed when the conductive path is formed and broken. In addition, depending on the temperature of the bistable resistive element 10 when forming the conductive path, the bistable resistive element 10 may have different initial temperatures, that is, the initial temperature system when the bistable resistive element 10 forms a conductive path. changeable. When the bistable resistive element 10 is triggered by the excitation electric field at different temperatures to form a conductive path multiple times, the bistable resistive element 1 〇 may have an initial temperature of unequal values, and may have a complex numerical value equal to The initial temperature. That is, the value of the initial temperature which is variable when the bistable resistive element 1 is switched between the high resistance state and the low resistance state is variable. For example, the initial temperature of the bistable resistive element 10 when operating in the low resistance state for the first time is 20 degrees, and the trigger temperature when switching to the high resistance state is 15 degrees. At this time, if an exciting electric field is applied to the bistable resistive element 1 at 15 degrees to operate the bistable resistive element 10 in a low resistance state, the bistable resistive element 10 operates in a low resistance state for the second time. The initial temperature is 15 degrees. Therefore, the initial temperature is determined based on the temperature at which the bistable resistive element 10 operates in the low resistance state when an exciting electric field is applied, and is variable. Further, the manner of generating the temperature difference signal and the configuration of the temperature difference signal generating unit 30 employed therein are not limited as long as it can directly change the temperature of the bistable resistance element 1 to change. For example, the temperature difference signal may be a change in ambient temperature in a space in which the bistable resistive element 10 is placed, such as a change in a gas temperature in a reaction furnace, a change in temperature in a natural environment, or a temperature change in a production plant; Directly acting on the bistable 099111028 Form No. A0101 Page 9/Total 29 Page 0992019365-0 201135789 ~, one of the resistors 1G, the heat source includes 70 pieces of electrons close to the bistable resistive element 10, 14, shot The heating lamp of the bistable resistive element 10 or the liquid immersing the bistable element 1G. [0018] The bistable resistive element 10 has a different minimum temperature difference at different initial temperatures during operation. When the bistable resistive element 1 receives an exciting electric field at an initial temperature, the plurality of metal strips 11 form a conductive path, and at this time, the bistable resistive element 10 operates in a low resistance state. At this time, the bistable resistive element 1 has a corresponding minimum temperature difference at the initial temperature. Referring to FIG. 4 'When the bistable resistive element 10 receives a temperature difference signal greater than the minimum temperature difference, the bistable resistive element 1 generates thermal expansion and contraction under the action of the temperature difference signal to cause the bistable The sliding of the molecular chain in the state resistive element 10, thereby destroying the conductive path, causes the bistable resistive element 10 to operate in a high resistance state. Specifically, since the thermal expansion coefficient of the polymer carrier 12 is much larger than the thermal expansion coefficient of the metal particles 11, the polymer carrier 12 generates a thermal riding/shrinking effect under the temperature difference signal, i..... The relative slip between the plurality of metal particles 11 is caused to cause a change in the distance between the metal particles 11, so that the plurality of metal conductive wires 13 are broken. Moreover, the effect of the temperature difference signal on the conductive path is irreversible, and even if the temperature difference signal is cancelled, or a different temperature difference signal is applied again, the conductive path is still in an off state, so that the bistable resistance element 10 still works. In high resistance state. Please refer to FIG. 5, which is a schematic diagram of current variation curves when the bistable resistive element 10 is electrically connected to a power source in the embodiment. Specifically, when the initial temperature is approximately 24 degrees Celsius, the bistable resistor element is taught to teach the electric field to operate the bistable resistive element 10 in a low resistance state. At this time, the bistable electric 099111028 form number A0101 Page 10 / Total 29 buy 0992019365-0 201135789 Ο The current of the resistive component 10 is greater than or equal to 0. 15 mA, output a high level signal; at the same time, the initial temperature is recorded, at this time, the minimum temperature difference corresponding to the initial temperature It is 1. 4 degrees Celsius. When the temperature of the bistable resistive element 10 is increased or decreased by 1.4 degrees Celsius or more, that is, when the temperature difference signal is greater than or equal to the minimum temperature difference, the bistable resistive element 10 operates in a high resistance state, and at this time, the double The current of the steady-state resistive element 10 is substantially 0 mA, and outputs a low level signal. Referring to FIG. 6, similar to the test principle of the bistable resistive element 10 of FIG. 5, when the bistable resistive element 10 is operated in a low resistance state by an exciting electric field, the initial temperature is approximately 14 degrees. The minimum temperature difference corresponding to the initial temperature is 2 degrees Celsius. When the temperature of the environment in which the bistable resistive element 10 is placed rises or falls below 2 degrees Celsius, the conductive path in the bistable resistive element 10 is turned off and operates in a high resistance state. It can also be seen from the above description that the minimum temperature difference is the minimum temperature difference signal that causes the conductive path to be broken. [0019] In addition to the materials and structures recited in the present embodiment, the type, particle diameter, volume ratio of the metal particles 11 in the bistable resistive element 10, and the polymer carrier in the bistable resistive element 10 There are no special restrictions on the type of 12. As long as the metal particles 11 are satisfied under an excitation electric field, a conductive path can be formed, and the conductive path can be broken under thermal expansion and contraction of the polymer carrier 12. Specifically, the metal particles 11 may also be gold, silver, tin, iron, copper or platinum, and the metal particles 11 may have a particle diameter ranging from 2 nm to 20 μm, and the metal particles 11 are in the bistable resistive element. The volume ratio in 10 can be 5% to 40%. The polymer carrier 12 may also be a series of other ruthenium rubbers other than polydecyl fluorene oxide; the polymer carrier 12 may also be a polymer such as polyethylene glycol or polypropylene; 099111028 Form No. 1010101 Page 11 of 29 0992019365-0 201135789 It is a polyester, epoxy resin series, anoxic glue series or acrylic series. The ratio of the resistance of the bistable resistive element 1 to the high resistance state and the resistance of the low resistance state is greater than 102:1. Further, referring to FIG. 7 , the temperature control switch 100 may further include two electrodes 40 distributed on opposite surfaces of the bistable resistive element 10 , such as the bistable resistive element 10 . In the case of a film-like structure, the two electrodes 40 can sandwich the film-like structure to form a sandwich structure. The temperature control switch 100 can be electrically connected to an external circuit through the two electrodes, such as a control circuit or an alarm device. For ease of operation, the excitation electric field generating unit 20 can be electrically connected to the bistable resistance element 10 through the two electrodes 40. The material of the electrode 40 is not limited, and includes a metal, a conductive paste or a metallic carbon nanotube. [0020] The bistable resistive element 10 of the temperature control switch 10 is converted between the low resistance state and the high resistance state by the excitation electric field and the temperature difference signal, and automatically switches to high after sensing the temperature difference signal. Resistance state. Therefore, the temperature control switch 100 does not need a complicated logic operation component, and only needs a bistable resistance component 10 to monitor the change of the operating temperature of the environment in which the temperature control switch 100 is located, and can monitor The change of the operating temperature is maintained in a fixed working state, such as a high resistance state, thereby making the temperature control switch 100 simple in structure. Further, the bistable resistive element 10 operates in a low resistance state under the excitation electric field, and can be used to monitor the temperature difference signal again. [0021] Referring to FIG. 8, a method for applying the temperature control switch 100 includes the following steps. [0022] Step S101, a bistable resistive element 10 is provided. The bistable resistive element 10 includes a polymer carrier 12 and a plurality of metal particles 11 dispersed in the polymer carrier 12. 099111028 Form No. A0101 Page 12 / Total 29 Page 0992019365-0 201135789 [0023] [0024] 0026 [0026] [0027] = S S! G2, when it is necessary to monitor the environment in which the temperature control switch i (6) is located When the operating temperature is changed, the excitation electric field acts on the bistable = resistance element 1 () at the initial temperature Tm, so that the double-resistance element 1 () is in and maintains a low barrier state. The initial temperature is the temperature of the bistable resistance element 1 Q when the excitation electric field is applied. In step S103, when the temperature of the bistable resistive element 1 变化 exceeds the minimum temperature difference ΔΤ, the bistable resistive element 1 〇 changes from a low resistance state to a high resistance state and is maintained at a high resistance state. That is, when the temperature of the bistable resistive element 1 I is changed to T T2-T1 丨 , the operating state of the bistable resistive element 10 is changed and fixed in a highly drunk state. As can be seen from the above description, when the temperature control switch 100 is applied, an optimum operating temperature, such as 20 degrees Celsius, can be determined. The bistable resistive element 10 is electrically excited at the optimum operating temperature to work in a low resistance state. At this time, the temperature control switch 100 can be used to monitor the operating temperature change of the environment. However, when the operating temperature rises or falls more than, the bistable resistive element 10 automatically switches to the high impedance state until the excitation of the next exciting electric field. Referring to FIG. 9, an alarm system 200' for using the temperature control switch 100 provided by the embodiment of the present invention further includes a power source 210 and an alarm device 220. The power source 210 is electrically connected to the temperature control switch 1 and the alarm device 220 to form a loop. The power source 21〇 is used to supply a voltage to the loop' and the electric field generated by the power source 210 at the bistable resistive element 10 does not trigger the bistable resistive element 10 to operate the bistable resistive element 10 at high resistance. state. 099111028 Form No. A0101 Page 13 of 29 0992019365-0 201135789 [0028] The temperature control switch is used to control the alarm device 220 to alarm. Specifically, when the excitation electric field generating unit 20 generates an excitation electric field to operate the temperature control switch 100 in the low resistance state, the alarm device 220 is configured to monitor the temperature difference change of the temperature difference signal generating unit 30. When the temperature difference signal generating unit 30 generates a temperature difference signal to cause the temperature control switch 100 to operate in a high impedance state, the alarm device 220 sends an alarm signal. That is, the alarm device 220 sends an alarm signal only when the temperature control switch 100 remembers the temperature difference signal until the temperature control switch 100 receives an excitation electric field. [0029] The alarm device 220 and the temperature control switch 100 may be connected in series in the circuit, or may be connected in parallel in the circuit. In this embodiment, the alarm device 220 can be connected in series with the temperature control switch 100. When the temperature control switch 100 is operated in a high impedance state, the loop current is reduced, so that the alarm device 220 sends an alarm signal [0030] In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0031] FIG. 1 is a schematic structural view of a temperature control switch according to an embodiment of the present invention. 2 is a schematic structural view of a bistable resistive element in the temperature control switch of FIG. 1. FIG. 3 is a schematic view showing the structure in which the bistable resistive element of FIG. 2 is formed with a conductive path. [0033] FIG. 099111028 Form No. A0101 Page 14 of 29 0992019365-0 201135789 [0034] FIG. 4 is a schematic view showing the structure of the bistable remote resistance element of FIG. 3 when the conductive path is broken. 5 is a schematic diagram of a current variation curve when an initial operating temperature of a temperature control switch is externally connected to a power supply according to an embodiment of the present invention. 6 is a schematic diagram of current variation curves when a temperature control switch with an initial operating temperature of 14 degrees Celsius is connected to a power supply according to an embodiment of the present invention. 7 is a schematic structural view of another temperature control switch according to an embodiment of the present invention, which does not include a temperature difference generating device. [0038] FIG. 8 is a schematic flow chart of a temperature control switch according to an embodiment of the present invention. 9 is a schematic diagram of a connection of an alarm system with a temperature control switch according to an embodiment of the present invention. [Main component symbol description] [0040] Temperature control switch: 100 [0041] Bi-stable resistance element: 10 q [0042] Metal particles: 11 [0043] Polymer carrier: 12 [0044] Metal conductive wire: 13 [0045] Excitation electric field generating unit: 20 [0046] Temperature difference signal generating unit: 30 [0047] Electrode: 40 [0048] Alarm system: 2 0 0 099111028 Form number A0101 Page 15 / 29 pages 0992019365-0 220 201135789 [0049] [0050] Power: 210 Alarm: 099111028 Form No. A0101 Page 16 of 29 0992019365-0