TW201134293A - Integrated circuit for driving high voltage LED lamp - Google Patents

Integrated circuit for driving high voltage LED lamp Download PDF

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Publication number
TW201134293A
TW201134293A TW99109373A TW99109373A TW201134293A TW 201134293 A TW201134293 A TW 201134293A TW 99109373 A TW99109373 A TW 99109373A TW 99109373 A TW99109373 A TW 99109373A TW 201134293 A TW201134293 A TW 201134293A
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TW
Taiwan
Prior art keywords
integrated circuit
emitting diode
electrically connected
control unit
driving
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TW99109373A
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Chinese (zh)
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TWI418238B (en
Inventor
Wei-Chen Fu
Wei-Chen Liang
Wen-Cen Li
Bo-Wen Hou
Ching-Sung Lo
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Integrated Crystal Technology Inc
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Priority to TW99109373A priority Critical patent/TWI418238B/en
Publication of TW201134293A publication Critical patent/TW201134293A/en
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Publication of TWI418238B publication Critical patent/TWI418238B/en

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Abstract

An integrated circuit for driving high voltage LED lamp is applied to a rectified power and a plurality of LED stacks. The integrated circuit for driving high voltage LED lamp includes a control unit, a control-side current clamping unit electrically connected to the control unit and the LED stack, at least a controlled-side current clamping unit electrically connected to the control unit and the LED stack, and at least a current sensing unit electrically connected to the controlled-side current clamping unit and the control unit. A current passing through the controlled-side current clamping unit is detected and informed to the control unit by the current sensing unit when the LED stack is driven by the rectified power. The control-side current clamping unit and the controlled-side current clamping unit in the previous stage of the controlled-side current clamping unit having the current passing through are controlled to close by the control unit.

Description

201134293 I l 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明係有關於一種積體電路,特別是一種驅動高壓發 光二極體燈泡之積體電路。 [先前技術] [0002] 目前發光二極體的應用已經非常廣泛,例如製造成發光 二極體燈泡;然而,習知發光二極體燈泡的控制電路普 遍存在著一個缺點’那就是無法同時達成積體化且又能 符合照明法規。茲舉例如下: Ο [0003] 下列專利文件:US 2006/0038542 Al、US 2008/0129220 Al 、 US 2003/0122502 Al 、 US 6,798,1 52 B2 ' US 7, 1 35, 825 B2 ' US 7, 489, 086 B2、US 7,528,551 B2、US 7,592,755 B2、US 6,441,558 B1 ' US 7,288,900 B2 ' US 2002/0140379 Al及US 7,642,725 B2 均為有關於發 光二極體照明之專利;皆使用到變壓器、直流電源供應 Q 器、大電感、大電容或光感測器中的任一元件;因此都 不可能以現有之半導體製程進行積體化。 [0004] 專利文件WO 2007/001 1 1 6 A1需要適用於不同電位的高 壓開關,但在現有的耐高壓之半導體製程中,沒有可對 應之適用元件可供使用;因此,無法進行積體化,生產 成本無法有效降低。再者,電壓在做切換時係採用開路 方式,電流瞬間開路或短路,容易造成電磁波干擾(EM I )。且導通電流是一個固定電流,總諧波失真(THD)大 於42% ’無法滿足現有照明規範需小於33%的要求。 099109373 表單編號A0101 第3頁/共20頁 0992016669-0 201134293 [0005] 專利文件US 6, 989, 807係偵測輸入電源的電壓準位,順 序開關電流驅動電路;然而卻忽略了發光二極體在使用 過程中其順向電壓會隨溫度升高而降低,很容易使原本 的驅動電流源所承受的跨壓過高,造成使用效率低。且 其沒有掌握最佳切換時間點,容易造成電磁波干擾和諧 波失真。再者,驅動電流為一個固定電流,雖然功率因 數可以滿足90%以上,但是總諧波失真仍然大於42%,無 法滿足現有照明規範需小於33%的要求。 【發明内容】 [0006] 為改善上述習知技術之缺點,本發明之目的在於提供一 種驅動高壓發光二極體燈泡之積體電路,使得發光二極 體燈泡的控制電路能達成積體化且又符合照明法規。 [0007] 為達成本發明之上述目的,本發明之驅動高壓發光二極 體燈泡之積體電路係應用於一整流電源及複數之發光二 極體堆疊。該驅動高壓發光二極體燈泡之積體電路包含 :一控制單元;一控制端限流單元,電連接至該控制單 元及該發光二極體堆疊;至少一受控端限流單元,電連 接至該控制單元及該發光二極體堆疊;及至少一電流偵 測單元,電連接至該受控端限流單元及該控制單元。當 該整流電源驅動該發光二極體堆疊時,該電流偵測單元 偵測到該受控端限流單元有電流流過並通知該控制單元 ;該控制單元控制有電流流過之該受控端限流單元前級 之該控制端限流單元及該受控端限流單元關閉。 【實施方式】 [0008] 請參考第一圖,其係為本發明之驅動高壓發光二極體燈 099109373 表單編號A0101 第4頁/共20頁 0992016669-0 201134293 泡之積體電路之一實施例方塊圖。本發明之驅動高壓發 光二極體燈泡之積體電路4〇係應用於一交流電源u、一 橋式整流器20及複數之發光二極體堆疊3〇_i〜3〇_6 (圖 示為六個’然本發明並不以此為限)。該驅動高壓發光 二極體燈泡之積體電路4〇包含一控制單元42、一控制端 限流單元44a、至少一受控端限流單元44b〜44f (圖示 為五個,然本發明並不以此為限)及至少一電流偵測單 元46b〜46f (圖示為五個,然本發明並不以此為限)。 0 [_]為方便解說’該控制單元42與該控制端限流單元44a之間 的電連接線路稱為G1 ’該控制單元42與該受控端限流單 元44b之間的電連接線路稱為,於此類推電連接線路G3 〜G6 ;該控制單元42與該電流偵測車元46b之間的電連接 線路稱為S2 ’於此類推電連接線路S3〜S6 ;流經該控制 端限流單元44a之電流稱為導通電流u,流經該受控端限 流單元44b之電流稱為導通電流12,於此類推導通電流13 16 〇 〇 [⑻10]該控制單元42係電連接至讀橋式整流器20、該發光二極 體堆璺3 0 _ 1、該控制端限流單元4 4 a、該些受控端限流單 元44b〜44f及該些電流偵測單元46b〜46f ;該控制端限 流單元44a尚且電連接至該些發光二極體堆疊3〇_1、 30_2 ;該受控端限流單元44b尚且電連接至該些發光二極 體堆疊30_2、30_3及該電流偵測單元46b ;該受控端限 流單元44c尚且電連接至該些發光二極體堆疊3〇_3、 30_4及該電流偵測單元46c ;該受控端限流單元44d尚且 電連接至該些發光二極體堆疊3〇_4、30_5及該電流偵測 099109373 表單編號A0101 第5頁/共20頁 0992016669-0 201134293 單元46d ;該受控端限流單元44e尚且電連接至該些發光 二極體堆疊30_5、30_6及該電流偵測單元46e ;該受控 知限流單元44f尚且電連接至該發光二極體堆疊go」及該 電流債測早元4 6 f,該橋式整流器2 〇係電連接至該交流電 源10、該控制單元42及該發光二極體堆疊goj。 [0011] [0012] [0013] 該橋式整流器20係用以將該交流電源1〇做全波整流( full wave rectification),將負半週之電壓轉為正 半週電壓。該交流電源10若為220伏特之交流電源,全波 整流後之電壓峰值為311伏特。該橋式整流器2〇將該交流 電源1 0做全波整流後輪出一整流電源2 5 ;該整流電源2 5 由於未經過濾波與穩壓,因此電源的電壓變動範圍很大 ;該整流電源25係提供該驅動高壓發光二極體燈泡之積 體電路40及該些發光二極體堆疊別」〜3〇_6驅動電源。 請參考第二圖,其係為發光二極體堆疊之一實施例電路 圖。該發光二極體堆疊30_1包含複數之發光二極體彼此 串聯;每一個發光二極體尚且電連接至一齊納二極體(BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit, and more particularly to an integrated circuit for driving a high-voltage light-emitting diode bulb. [Prior Art] [0002] At present, the application of the light-emitting diode has been very extensive, for example, to manufacture a light-emitting diode bulb; however, the control circuit of the conventional light-emitting diode bulb generally has a disadvantage "that is, it cannot be achieved at the same time. Integrated and in compliance with lighting regulations. For example: Ο [0003] The following patent documents: US 2006/0038542 Al, US 2008/0129220 Al, US 2003/0122502 Al, US 6,798, 1 52 B2 ' US 7, 1 35, 825 B2 ' US 7, 489 , 086 B2, US 7,528,551 B2, US 7,592,755 B2, US 6,441,558 B1 ' US 7,288,900 B2 ' US 2002/0140379 Al and US 7,642,725 B2 are all patents on light-emitting diode lighting; all use transformers, DC power supply Q Any of the components, large inductors, large capacitors, or photosensors; therefore, it is impossible to integrate them with existing semiconductor processes. [0004] Patent document WO 2007/001 1 1 6 A1 requires a high voltage switch suitable for different potentials, but in the existing high voltage resistant semiconductor process, there is no corresponding applicable component available; therefore, it is impossible to integrate Production costs cannot be effectively reduced. In addition, when the voltage is switched, the open circuit is used, and the current is instantaneously opened or short-circuited, which easily causes electromagnetic interference (EM I ). And the on-current is a fixed current, and the total harmonic distortion (THD) is greater than 42%', which does not meet the requirements of existing lighting specifications of less than 33%. 099109373 Form No. A0101 Page 3 of 20 0992016669-0 201134293 [0005] Patent document US 6, 989, 807 detects the voltage level of the input power supply, sequentially switches the current drive circuit; however, ignores the LED During use, its forward voltage decreases with increasing temperature, which makes it easy for the original drive current source to withstand excessive crossover voltages, resulting in low efficiency. And it does not grasp the optimal switching time point, and it is easy to cause electromagnetic wave to interfere with harmonic wave distortion. Furthermore, the drive current is a fixed current. Although the power factor can satisfy more than 90%, the total harmonic distortion is still greater than 42%, which cannot meet the requirements of the existing lighting specification of less than 33%. SUMMARY OF THE INVENTION [0006] In order to improve the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an integrated circuit for driving a high-voltage light-emitting diode bulb, so that the control circuit of the light-emitting diode bulb can be integrated and It also complies with lighting regulations. In order to achieve the above object of the present invention, an integrated circuit for driving a high-voltage light-emitting diode bulb of the present invention is applied to a rectified power source and a plurality of light-emitting diode stacks. The integrated circuit for driving the high-voltage light-emitting diode bulb comprises: a control unit; a control terminal current limiting unit electrically connected to the control unit and the LED stack; at least one controlled terminal current limiting unit, electrically connected And the control unit and the LED stack; and at least one current detecting unit electrically connected to the controlled terminal current limiting unit and the control unit. When the rectifying power source drives the LED stack, the current detecting unit detects that the controlled current limiting unit has a current flowing and notifies the control unit; the control unit controls the controlled current flow. The control terminal current limiting unit of the front stage of the current limiting unit and the controlled terminal current limiting unit are turned off. [Embodiment] Please refer to the first figure, which is a driving high-voltage light-emitting diode lamp of the present invention. 099109373 Form No. A0101 Page 4 / Total 20 Page 0992016669-0 201134293 One embodiment of the integrated circuit of the bubble Block diagram. The integrated circuit 4 for driving a high-voltage light-emitting diode bulb of the present invention is applied to an AC power source u, a bridge rectifier 20, and a plurality of LED stacks 3〇_i~3〇_6 (shown as six 'The invention is not limited to this). The integrated circuit 4〇 for driving the high-voltage LED bulb includes a control unit 42, a control terminal current limiting unit 44a, and at least one controlled-end current limiting unit 44b-44f (shown as five, but the invention Not limited to this and at least one current detecting unit 46b~46f (there are five shown in the figure, but the invention is not limited thereto). 0 [_] For convenience of explanation, the electrical connection line between the control unit 42 and the control terminal current limiting unit 44a is called G1. The electrical connection line between the control unit 42 and the controlled terminal current limiting unit 44b is called For the push connection lines G3 GG6; the electrical connection between the control unit 42 and the current detecting vehicle unit 46b is referred to as S2' such push connection lines S3 S S6; The current of the flow unit 44a is referred to as the on current u, and the current flowing through the controlled terminal current limiting unit 44b is referred to as the on current 12, and such a push current 13 16 〇〇 [(8) 10] the control unit 42 is electrically connected to the read a bridge rectifier 20, the LED stack 3 0 _ 1 , the control terminal current limiting unit 44 4 a, the controlled end current limiting units 44 b 44 44f and the current detecting units 46 b 46 46f; The control terminal current limiting unit 44a is still electrically connected to the light emitting diode stacks 3〇_1, 30_2; the controlled terminal current limiting unit 44b is still electrically connected to the light emitting diode stacks 30_2, 30_3 and the current detecting The measuring unit 46b; the controlled end current limiting unit 44c is still electrically connected to the light emitting diode stacks 3〇_3, 30_4 and the current detecting unit 46c; the controlled end current limiting unit 44d is still electrically connected to the LED stacks 3〇_4, 30_5 and the current detecting 099109373 Form No. A0101 Page 5 of 20 0992016669-0 201134293 unit 46d; the controlled end current limiting unit 44e is still electrically connected to the light emitting diode stacks 30_5, 30_6 and the current detecting unit 46e; the controlled know current limiting unit 44f is still electrically connected to the The LED stack and the current capacitor are connected to the AC power source 10, the control unit 42 and the LED stack goj. [0013] [0013] The bridge rectifier 20 is configured to perform full wave rectification of the AC power source 1 to convert the voltage of the negative half cycle into a positive half cycle voltage. If the AC power source 10 is a 220 volt AC power source, the full-wave rectified voltage peak is 311 volts. The bridge rectifier 2 做 the AC power supply 10 is fully wave rectified and then a rectified power supply 2 5 ; the rectified power supply 2 5 has a large range of voltage variation due to unfiltered waves and voltage regulation; the rectified power supply The 25 series provides the integrated circuit 40 for driving the high-voltage light-emitting diode bulb and the light-emitting diode stack "3" _6 driving power supply. Please refer to the second figure, which is a circuit diagram of an embodiment of a light emitting diode stack. The light emitting diode stack 30_1 includes a plurality of light emitting diodes connected in series with each other; each of the light emitting diodes is electrically connected to a Zener diode (

Zener diode)以作為開路保護(open circuit protection) 。 其餘該些發光二極體堆疊 3〇_2〜3〇_6 與該 發光二極體堆疊30_1相同,故於此不再贅述。 一顆發光二極體在典型順向電流(typical forward current) 20毫安培驅動下,順向電壓約3. 6伏特。若以 12顆發光二極體串接作為該發光二極體堆疊3〇j,那麼 在20毫安培的順向電流驅動下,順向電壓約為43. 2伏特 。請參考第三圖,其係為發光二極體堆疊之一實施例電 流電壓曲線圖;圖示係以12顆發光二極體組成該發光二 表單編號A0101 099109373 第6頁/共20頁 0992016669-0 201134293 極體堆疊30_1 ;橫轴表示跨過該發光二極體堆疊30_1之 順向電壓,縱軸表示通過該發光二極體堆疊30_1之順向 電流。 [0014] 該些發光二極體堆疊30_1〜30_6串聯起來即可形成耐高 電壓的發光二極體串列(發光二極體燈泡)。在220伏 特交流電源的應用中,可以例如串連六個發光二極體堆 疊,使得在20毫安培驅動下的順向電壓接近全波整流後 的電壓锋值311伏特。 Ο [0015] 請參考第四圖,其係為本發明之受控端限流單元及電流 偵測單元之一實施倒方塊圖。該受控端限流單元44b包含 一N型金氧半導體442及一回饋電阻444。該回饋電阻444 電連接至該N型金氧半導體442之源極;該N型金氧半導體 442之閘極經由該電連接線路G2電連接至該控制單元42 ( 未圖示);該N型金氧半導體442之汲極電連接至該些發 光二極體堆疊30_2、30_3。 [0016] ❹ 當該電連接線路G 2經由該控制早元4 2設定在固定之南電 壓準位時(以邏輯狀態1表示),該N型金氧半導體442處 於導通狀態。而流經該N型金氧半導體442之電流(即該 導通電流12)係由該N型金氧半導體442之閘極與源極之 間的電壓與該回饋電阻444之主值(nominal value) 所控制;該導通電流12亦通過該回饋電阻444,當該導通 電流12升高時,該回饋電阻444的跨壓也會升高,該N型 金氧半導體442之閘極與源極之間的電壓就會減少,從而 限定了該導通電流12的表大值,而該導通電流12的袁大 值係由該回饋電阻444與該N型金氧半導體442之閘極之電 099109373 表單編號A0101 第7頁/共20頁 0992016669-0 201134293 壓準位決定。 [0017]該控制端限流單元44a及該些受控端限流單元44c〜44 f 與該受控端限流單元44b類似,於此不再贅述;惟該回饋 電阻444之限電流值(阻值)並不相同(例如該控制端限 流單元44a的該回饋電阻444之阻值為750歐姆;其餘該 些受控端限流單元44b〜44f的該回饋電阻444之阻值依 序為550、400、300、200及180歐姆),其目的在調整 功率因數(power factor)使其接近1〇〇%和總諧波失 真(total harmonic distortion,THD)接近於〇 % [0018]該電流偵測單元46b包含一 ΝΪ>Ν電晶體469 反向器464 ’該反向器464之輸入端電連接至該ΝΡΝ電晶體469之集 極;一緩衝器462,該緩衝器462之輸入端電連接至該反 向器464之輸出端’輸出端經由該電連接線路52電連接至 該控制單元42 (未圖示);一上拉電阻466,電連接至該 ΝΡΝ電晶體469之集極;一基極.電阻.46.8,一端電連接至 該ΝΡΝ電晶體469之基極,另·^端電連接至該回饋電阻 444及該Ν型金氧半導體442之源極。 [0019] 該電流.彳貞測單元46b偵測電流的方式為偵測流過該回饋電 阻444之跨壓;當該導通電流12大於一預設電流值時,回 饋電阻444之跨壓就會啟動該NPN電晶體469。該上拉電 阻466係用以放大電壓信號,該NPN電晶體469之集極電 壓信號通過具有遲滞輸入之該反向器464當作是簡易比較 器。因此’當有足夠大的該導通電流12通過該回饋電阻 444時’該電流偵測單元46b會輸出高邏輯準位1至該控制 099109373 表單編號A0101 第8頁/共20頁 09920 201134293 單元42 ;該導通電流12不夠大時該電流偵測單元46b會輸 出低邏輯準位0至該控制單元42。其餘該些電流偵測單元 46c〜46f與該電流偵測單元46b類似,故於此不再贅述 〇 [0020] Ο 請參考第五圖,其係為本發明之控制單元之一實施例邏 輯閘方塊圖。該控制單元42包含至少一第一反閘424_1〜 424_5 (圖示為五個);至少一第二反閘426_1〜426_5 (圖示為五個),該些第二反閘426_1〜426_5之輸入端 分別電連接至該些第一反閘424_1〜424_5之輸出端及該 些電連接線路G1〜G5 ;至少一或閘422_1〜422_4 (圖示 為四個),該些或閘422 j〜422_4之輸出端分別電連接 至該些第一反閘424_1〜424_4之輸入端。該些或閘 422_1〜422_4之輸入端之一端分別電連接至該電連接線 路S2〜S5 ;另一端分別電連接至該些第二反閘426_2〜 426_5之輸出端。該第一反閘424_5的輸入端電連接至該 電連接線路S6。 〇 [0021] 該控制單元42接受該些電流债測單.元46b〜46f的邏輯信 號,經過邏輯運算後輸出固定電壓之邏輯信號以控制該 控制端限流單元44a及該些受控端限流單元44b〜44f。 其中該導通電流II不需偵測,而該受控端限流單元44f固 定在高邏輯準位。邏輯運算之真值表如下(邏輯閘運算 為習知技術,故於此不再贅述,僅列表如下): 099109373 表單編號A0101 第9頁/共20頁 0992016669-0 201134293 [0022] 11 12 13 14 15 16 S2 S3 S4 S5 S6 G1 G2 G3 G4 G5 G6 0 0 0 0 0 1 0 0 0 0 1 0 0 η η η 1 0 0 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 0 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 ] 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 ] 1 0 1 0 0 0 0 1 0 0 0 0 0 1 1 1 ) 1 1 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 [0023] 請參考第六圖’其係為本發明之控制單元之時序圖。請 參考第七圖’其係為該些導通電流與該整流電源曲線圖 。請參考第八圖,其係為總耗電流與該整流電源曲線圖 ...... - 。當該整流電源25驅動該些發光二極體堆疊3〇_1〜3〇_6 時’該些電流偵測單元4 6 b〜4 6 f j貞測到該些受控端限流 單元44b〜44f有電流流過並通知該控制單元42 ;該控制 單元42控制有電流流過之該些受控端限流單元44b〜44f 前級之該控制端限流單元4 4 a及該些受控端限流單元4 4 b 〜44e關閉。 [0024] 舉例來說: [0025] 本發明之驅動高壓發光二極體燈泡之積體電路不但可積 體化且又符合照明法規,其測試結果如下: [0026] 1 ·功率因子(power factor) : 96% [0027] 2.總諧波失真(total harmonic distortion, THD):11.5 % 099109373 表單編號A0101 第10頁/共20頁 0992016669-0 201134293 [0028] 3.效率(ef f i ci ency ) : 90. 5% [0029] 4·光電功效(ef f i cacy ) : 1 04( lm/W) [0030] 其中發光二極體之發光效率為115(lm/W)。 [0031] 綜上所述,當知本發明已具有產業利用性、新穎性與進 步性,又本發明之構造亦未曾見於同類產品及公開使用 ,完全符合發明專利申請要件,爰依專利法提出申請。 【圖式簡單說明】Zener diode) is used as open circuit protection. The remaining LED stacks 3〇_2~3〇_6 are the same as the LED stack 30_1, and thus will not be described again. 6伏特。 A light-emitting diode is driven by a typical forward current of 20 mA, the forward voltage is about 3.6 volts. 2伏特。 If the 12-element diode is connected in series as the LED stack 3〇j, then the forward current is driven by a forward current of 20 mA, the forward voltage is about 43.2 volts. Please refer to the third figure, which is a current-voltage curve diagram of one embodiment of a light-emitting diode stack; the figure is composed of 12 light-emitting diodes. The light-emitting two form number A0101 099109373 Page 6 of 20 pages 0992016669- 0 201134293 The polar body stack 30_1; the horizontal axis represents the forward voltage across the light emitting diode stack 30_1, and the vertical axis represents the forward current through the light emitting diode stack 30_1. [0014] The light-emitting diode stacks 30_1~30_6 are connected in series to form a high-voltage-resistant light-emitting diode series (light-emitting diode bulb). In a 220 volt AC power supply application, for example, six LED stacks can be connected in series such that the forward voltage at 20 mA drive is close to the full wave rectified voltage peak of 311 volts. [0015] Please refer to the fourth figure, which is an inverted block diagram of one of the controlled end current limiting unit and the current detecting unit of the present invention. The controlled terminal current limiting unit 44b includes an N-type MOS semiconductor 442 and a feedback resistor 444. The feedback resistor 444 is electrically connected to the source of the N-type MOS 442; the gate of the N-type MOS 442 is electrically connected to the control unit 42 (not shown) via the electrical connection line G2; The drain of the MOS semiconductor 442 is electrically connected to the light emitting diode stacks 30_2, 30_3. [0016] When the electrical connection line G2 is set to a fixed south voltage level (indicated by a logic state 1) via the control element B2, the N-type MOS semiconductor 442 is in an on state. The current flowing through the N-type MOS 442 (ie, the on-current 12) is a voltage between the gate and the source of the N-type MOS 442 and a nominal value of the feedback resistor 444. The conduction current 12 also passes through the feedback resistor 444. When the conduction current 12 rises, the voltage across the feedback resistor 444 also rises. The gate and the source of the N-type MOS 442 are between the gate and the source. The voltage is reduced, thereby defining a large value of the on-current 12, and the value of the on-current 12 is the electric value of the feedback resistor 444 and the gate of the N-type MOS semiconductor 099109373 Form No. A0101 Page 7 of 20 Page 0992016669-0 201134293 The pressure level is determined. [0017] The control terminal current limiting unit 44a and the controlled terminal current limiting units 44c to 44f are similar to the controlled terminal current limiting unit 44b, and will not be described herein; however, the current limit value of the feedback resistor 444 ( The resistance value is not the same (for example, the resistance of the feedback resistor 444 of the control terminal current limiting unit 44a is 750 ohms; and the resistance values of the feedback resistors 444 of the remaining controlled current limiting units 44b 4444f are 550, 400, 300, 200, and 180 ohms, the purpose of which is to adjust the power factor to be close to 1% and the total harmonic distortion (THD) is close to 〇% [0018] The detecting unit 46b includes a ΝΪ > Ν transistor 469 inverter 464 'the input of the inverter 464 is electrically connected to the collector of the NMOS 469; a buffer 462, the input of the buffer 462 is electrically An output terminal connected to the output of the inverter 464 is electrically connected to the control unit 42 (not shown) via the electrical connection line 52; a pull-up resistor 466 is electrically connected to the collector of the germanium transistor 469; a base. resistance. 46.8, one end is electrically connected to the base of the germanium transistor 469, · ^ End electrically connected to the feedback resistor 444 and the source of Ν-type metal oxide semiconductor electrode 442. [0019] The current detecting unit 46b detects the current by detecting a voltage across the feedback resistor 444; when the conducting current 12 is greater than a predetermined current value, the voltage across the feedback resistor 444 is The NPN transistor 469 is activated. The pull-up resistor 466 is used to amplify the voltage signal, and the collector voltage signal of the NPN transistor 469 is passed through the inverter 464 having a hysteresis input as a simple comparator. Therefore, 'When the conduction current 12 is sufficiently large to pass through the feedback resistor 444', the current detecting unit 46b outputs a high logic level 1 to the control 099109373 Form No. A0101 Page 8 / Total 20 Page 09920 201134293 Unit 42; When the on current 12 is not large enough, the current detecting unit 46b outputs a low logic level 0 to the control unit 42. The remaining current detecting units 46c to 46f are similar to the current detecting unit 46b, and therefore will not be described herein. [0020] Please refer to the fifth figure, which is an embodiment of the control unit of the present invention. Block diagram. The control unit 42 includes at least one first reverse gate 424_1 424 424_5 (shown as five); at least one second reverse gate 426_1 ~ 426_5 (shown as five), and the inputs of the second reverse gates 426_1 ~ 426_5 The terminals are electrically connected to the output ends of the first back gates 424_1 424 424_5 and the electrical connection lines G1 GG5; at least one of the gates 422_1 422 422_4 (shown as four), and the 422s 422 to 422_4 The output ends are electrically connected to the input ends of the first reverse gates 424_1 424 424_4, respectively. One ends of the input terminals 422_1 to 422_4 are electrically connected to the electrical connection lines S2 to S5, respectively, and the other ends are electrically connected to the output ends of the second reverse gates 426_2 to 426_5, respectively. The input terminal of the first reverse gate 424_5 is electrically connected to the electrical connection line S6.控制 [0021] The control unit 42 receives the logic signals of the current debt test units 46b to 46f, and outputs a logic signal of a fixed voltage after the logic operation to control the control terminal current limiting unit 44a and the controlled end limits. Stream units 44b to 44f. The conduction current II does not need to be detected, and the controlled terminal current limiting unit 44f is fixed at a high logic level. The truth table of the logic operation is as follows (the logic gate operation is a conventional technique, so it will not be described here, only the list is as follows): 099109373 Form No. A0101 Page 9 / Total 20 Pages 0992016669-0 201134293 [0022] 11 12 13 14 15 16 S2 S3 S4 S5 S6 G1 G2 G3 G4 G5 G6 0 0 0 0 0 1 0 0 0 0 1 0 0 η η η 1 0 0 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 0 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 ] 0 0 1 0 0 0 0 1 0 0 0 0 0 1 1 ] 1 0 1 0 0 0 0 1 0 0 0 0 0 1 1 1 ) 1 1 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 [0023] Please refer to the sixth figure, which is the control unit of the present invention. Timing diagram. Please refer to the seventh figure, which is the graph of the on current and the rectified power supply. Please refer to the eighth figure, which is the total current consumption and the rectifier power supply curve ...... When the rectifying power supply 25 drives the LED stacks 3〇_1~3〇_6, the current detecting units 4 6 b 4 4 fj detect the controlled end current limiting units 44 b 〜 44f has a current flowing through and notifying the control unit 42; the control unit 42 controls the control terminal current limiting unit 4 4 a of the pre-stage of the controlled-end current limiting units 44b-44f through which current flows, and the controlled The end current limiting units 4 4 b 4444e are turned off. [0024] For example: [0025] The integrated circuit for driving a high-voltage light-emitting diode bulb of the present invention is not only integrated but also complies with lighting regulations, and the test results are as follows: [0026] 1 · Power factor (power factor) ) : 96% [0027] 2. Total harmonic distortion (THD): 11.5 % 099109373 Form No. A0101 Page 10 / Total 20 Pages 0992016669-0 201134293 [0028] 3. Efficiency (ef fi ci ency ) : 90. 5% [0029] 4. Photoelectric effect (ef fi cacy ) : 1 04 ( lm / W) [0030] wherein the luminous efficiency of the light-emitting diode is 115 (lm / W). [0031] In summary, it is known that the present invention has industrial applicability, novelty and advancement, and the structure of the present invention has not been seen in similar products and public use, fully conforms to the requirements of the invention patent application, and is proposed according to the patent law. Application. [Simple description of the map]

[0032] 第一圖為本發明之驅動高壓發光二極體燈泡之積體電路 之一實施例方塊圖。 [0033] 第二圖為發光二極體堆疊之一實施例電路圖。 [0034] 第三圖為發光二極體堆疊之一實施例電流電壓曲線圖。 [0035] 第四圖為本發明之受控端限流單元及電流偵測單元之一 實施例方塊圖。 [0036] 第五圖為本發明之控制單元之一實施例邏輯閘方塊圖。 [0037] 第六圖為本發明之控制單元之時序圖。 [0038] 第七圖為該些導通電流與該整流電源曲線圖。 [0039] 第八圖為總耗電流與該整流電源曲線圖。 【主要元件符號說明】 [0040] 交流電源1 0 [0041] 橋式整流器20 [0042] 整流電源2 5 099109373 表單編號A0101 第11頁/共20頁 0992016669-0 201134293 [0043] 發光二極體堆疊30_1〜30_6 [0044] 驅動高壓發光二極體燈泡之積體電路40 [0045] 控制單元4 2 [0046] 控制端限流單元44a [0047] 受控端限流單元44b〜44 f [0048] 電流彳貞測單元4 6 b〜4 6 f [0049] 電連接線路G1〜G6 [0050] 電連接線路S2〜S6 [0051] 導通電流II〜16 [0052] N型金氧半導體442 [0053] 回饋電阻444 [0054] NPN 電晶體 469 [0055] 反向器464 [0056] 緩衝器462 [0057] 上拉電阻466 [0058] 基極電阻468 099109373 表單編號A0101 第12頁/共20頁 0992016669-0[0032] The first figure is a block diagram of an embodiment of an integrated circuit for driving a high voltage light emitting diode bulb of the present invention. [0033] The second figure is a circuit diagram of one embodiment of a light emitting diode stack. [0034] The third figure is a current voltage curve diagram of one embodiment of a light emitting diode stack. [0035] The fourth figure is a block diagram of an embodiment of a controlled-ended current limiting unit and a current detecting unit of the present invention. [0036] FIG. 5 is a block diagram of a logic gate of an embodiment of a control unit of the present invention. [0037] The sixth diagram is a timing diagram of the control unit of the present invention. [0038] The seventh figure is a graph of the on current and the rectified power source. [0039] The eighth figure is a graph of the total current consumption and the rectified power supply. [Main component symbol description] [0040] AC power supply 1 0 [0041] Bridge rectifier 20 [0042] Rectifier power supply 2 5 099109373 Form number A0101 Page 11 / Total 20 pages 0992016669-0 201134293 [0043] LED stack 30_1~30_6 [0044] Integrated circuit 40 for driving a high-voltage light-emitting diode bulb [0045] Control unit 4 2 [0046] Control-end current limiting unit 44a [0047] Control-end current limiting unit 44b-44 f [0048] Current Detecting Unit 4 6 b 〜 4 6 f [0049] Electrical Connection Lines G1 GG6 [0050] Electrical Connection Lines S2 S S6 [0051] On Current II 〜 16 [0052] N-type MOS 442 [0053] Feedback resistor 444 [0054] NPN transistor 469 [0055] Inverter 464 [0056] Buffer 462 [0057] Pull-up resistor 466 [0058] Base resistor 468 099109373 Form number A0101 Page 12 of 20 Page 0992016669- 0

Claims (1)

201134293 七、申請專利範圍: 1 . 一種驅動高壓發光二極體燈泡之積體電路,係應用於一整 流電源及複數之發光二極體堆疊,該驅動高壓發光二極體 燈泡之積體電路包含: 一控制單元; 一控制端限流單元,電連接至該控制單元及該發光二極體 堆疊; 至少一受控端限流單元,電連接至該控制單元及該發光二 極體堆疊;及 至少一電流偵測單元,電連接至該受控端限流單元及該控 制單元, 其中,當該整流電源驅動該發光二極體堆疊時,該電流偵 測單元偵測到該受控端限流單元有電流流過並通知該控制 單元;該控制單元控制有電流流過之該受控端限流單元前 級之該控制端限流單元及該受控端限流單元關閉。 2 .如申請專利範圍第1項之驅動高壓發光二極體燈泡之積體 電路,該控制端限流單元包含: I 一 N型金氧半導體;及 一回饋電阻,電連接至該N型金氧半導體之源極。 3 .如申請專利範圍第1項之驅動高壓發光二極體燈泡之積體 電路,該受控端限流單元包含: 一 N型金氧半導體;及 一回饋電阻,電連接至該N型金氧半導體之源極。 4 .如申請專利範圍第1項之驅動高壓發光二極體燈泡之積體 電路,該電流偵測單元包含一NPN電晶體。 099109373 表單編號 A0101 第 13 頁/共 20 頁 0992016669-0 201134293 5 .如申請專利範圍第4項之驅動高壓發光二極體燈泡之積體 電路,該電流债測單元更包含一反向器,該反向器之輸入 端電連接至該NPN電晶體之集極。 6 .如申請專利範圍第5項之驅動高壓發光二極體燈泡之積體 電路,該電流偵測單元更包含一緩衝器,該緩衝器之輸入 端電連接至該反向器之輸出端。 7 .如申請專利範圍第6項之驅動高壓發光二極體燈泡之積體 電路,該電流偵測單元更包含一上拉電阻,電連接至該 NPN電晶體之集極。 8 .如申請專利範圍第7項之驅動高壓發光二極體燈泡之積體 電路,該電流偵測單元更包含一基極電阻,電連接至該 NPN電晶體之基極。 9 .如申請專利範圍第1項之驅動高壓發光二極體燈泡之積體 電路,該控制單元包含: 至少一第一反閘;及 至少一第二反閘,該第二反閘之輸入端電連接至該第一反 閘之輸出端。 10 .如申請專利範圍第9項之驅動高壓發光二極體燈泡之積體 電路,該控制單元更包含至少一或閘,該或閘之輸出端電 連接至該第一反閘之輸入端。 099109373 表單編號A0101 第14頁/共20頁 0992016669-0201134293 VII. Patent application scope: 1. An integrated circuit for driving a high-voltage light-emitting diode bulb is applied to a rectified power supply and a plurality of LED stacks, and the integrated circuit for driving the high-voltage LED bulb includes a control unit; a control terminal current limiting unit electrically connected to the control unit and the LED stack; at least one controlled terminal current limiting unit electrically connected to the control unit and the LED stack; At least one current detecting unit is electrically connected to the controlled terminal current limiting unit and the control unit, wherein when the rectifying power source drives the LED stack, the current detecting unit detects the controlled end limit The flow unit has a current flowing through and notifying the control unit; the control unit controls the control terminal current limiting unit of the front stage of the controlled terminal current limiting unit through which the current flows, and the controlled terminal current limiting unit is turned off. 2. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 1 of the patent scope, the control terminal current limiting unit comprises: an I-N type gold-oxygen semiconductor; and a feedback resistor electrically connected to the N-type gold The source of oxygen semiconductors. 3. The integrated circuit for driving a high-voltage light-emitting diode bulb according to claim 1, wherein the controlled-end current limiting unit comprises: an N-type metal oxide semiconductor; and a feedback resistor electrically connected to the N-type gold The source of oxygen semiconductors. 4. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 1, wherein the current detecting unit comprises an NPN transistor. 099109373 Form No. A0101 Page 13 of 20 0992016669-0 201134293 5. As disclosed in claim 4, the integrated circuit of the high-voltage light-emitting diode bulb further includes an inverter. The input of the inverter is electrically coupled to the collector of the NPN transistor. 6. The integrated circuit for driving a high voltage light emitting diode bulb according to claim 5, wherein the current detecting unit further comprises a buffer, and the input end of the buffer is electrically connected to the output end of the inverter. 7. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 6 of the patent scope, the current detecting unit further comprising a pull-up resistor electrically connected to the collector of the NPN transistor. 8. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 7, wherein the current detecting unit further comprises a base resistor electrically connected to a base of the NPN transistor. 9. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 1, wherein the control unit comprises: at least one first reverse gate; and at least one second reverse gate, the second reverse gate input end Electrically connected to the output of the first reverse gate. 10. The integrated circuit for driving a high voltage light-emitting diode bulb according to claim 9, wherein the control unit further comprises at least one gate, and the output of the gate is electrically connected to the input terminal of the first gate. 099109373 Form No. A0101 Page 14 of 20 0992016669-0
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102595715A (en) * 2012-01-19 2012-07-18 上海晶丰明源半导体有限公司 Light-emitting diode (LED) linear current control circuit and LED linear circuit
CN102665324A (en) * 2012-04-12 2012-09-12 上海晶丰明源半导体有限公司 LED linear driving circuit applicable to thyristor dimmer and control method
EP2670217A1 (en) 2012-06-01 2013-12-04 Jinone Incorporation Apparatus for controlling LED string
TWI471057B (en) * 2012-12-07 2015-01-21 Princeton Technology Corp A lighting system and controlling method thereof

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CA2336497A1 (en) * 2000-12-20 2002-06-20 Daniel Chevalier Lighting device
JP4400880B2 (en) * 2004-10-05 2010-01-20 株式会社小糸製作所 Lighting control circuit for vehicular lamp
TWI348141B (en) * 2006-10-16 2011-09-01 Chunghwa Picture Tubes Ltd Light source driving circuit
US7528551B2 (en) * 2007-02-26 2009-05-05 Semiconductor Components Industries, L.L.C. LED control system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102595715A (en) * 2012-01-19 2012-07-18 上海晶丰明源半导体有限公司 Light-emitting diode (LED) linear current control circuit and LED linear circuit
CN102665324A (en) * 2012-04-12 2012-09-12 上海晶丰明源半导体有限公司 LED linear driving circuit applicable to thyristor dimmer and control method
EP2670217A1 (en) 2012-06-01 2013-12-04 Jinone Incorporation Apparatus for controlling LED string
TWI471057B (en) * 2012-12-07 2015-01-21 Princeton Technology Corp A lighting system and controlling method thereof

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