TW201128814A - Light emitting diode device - Google Patents

Light emitting diode device Download PDF

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Publication number
TW201128814A
TW201128814A TW99103784A TW99103784A TW201128814A TW 201128814 A TW201128814 A TW 201128814A TW 99103784 A TW99103784 A TW 99103784A TW 99103784 A TW99103784 A TW 99103784A TW 201128814 A TW201128814 A TW 201128814A
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Taiwan
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light
emitting diode
encapsulation layer
diode device
top surface
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TW99103784A
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Chinese (zh)
Inventor
Zong-Lin Lu
Hsin-Nan Kuo
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Everlight Electronics Co Ltd
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Priority to TW99103784A priority Critical patent/TW201128814A/en
Publication of TW201128814A publication Critical patent/TW201128814A/en

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Abstract

A light emitting diode (LED) device is provided. The LED device comprises a substrate, a LED chip and a packaging body. The LED chip is disposed on the substrate and comprises a top surface. The packaging body is disposed on the substrate, and completely covers the LED chip, in which the packaging body comprises a first packaging layer and a second packaging layer. The first packaging layer and the second packaging layer comprise a wavelength converting substance. The first packaging layer is disposed upon the top surface and has a concentration weight percentage of the wavelength converting substance greater than that of the second packaging layer.

Description

201128814 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種發光二極體裝置;特別是關於一種具有濃度 分佈非均勻之波長轉換物質之發光二極體裝置。 【先前技術】 由於發光二極體具有體積小、反應快、效率高以及壽命長之優 點,因此無論是用於顯示器之照明或環境照明,皆有其廣大之應 用空間。早期之發光二極體係為單色光之發光二極體,因此需同 時使多顆不同顏色之發光二極體晶粒加以混光,方能提供白光之 光源。然而利用此種方法製成之白光發光二極體裝置,其成本過 於咼昂而不利於產業應用。因此隨著發光二極體製造技術的發 展,一種利用單顆晶粒即可產生白光之發光二極體裝置遂被提出。 第1圖所示係為一習知單顆晶粒之白光發光二極體裝置1示意 圖。發光二極體裝置1包含一基板n、一發光二極體晶粒12、電 極14及一封裝層13。發光二極體晶粒12係為一藍光發光二極體 修晶粒,並且設置於基板丨丨之電極14上。發光二極體晶粒12之頂 部亦β又置有一電極14’並藉由一金電屬導電線連接至基板丨丨上之 電極14。封裝層13係由一膠體所構成,並且包含有例如為螢光粉 之一波長轉換物質。 發光二極體晶粒12所發出之藍光,將有一部分直接出射發光二 極體裝置1,並且具有另一部分被波長轉換物質轉換成黃光後射出 發光一極體裝置卜藉此’當藍光與黃光同時被使用者觀察到時, 由於藍光與黃光的互補作用,其效果即相當於一白光。 201128814 然而’發光二極體晶粒12所發出之光源在方向性上並非一均勻 光源。通常而言,如第1圖中所示,發光二極體晶粒12將在如第 一方向15之一縱向(即90。)有一最強之發光強度,並且會隨著 角度的遞增及遞減,而減少於該角度上之發光強度。亦即,在如 第三方向17之一橫向(即〇。或18〇。)時,發光二極體晶粒具有一最 小之發光強度,而在如第二方向16之一斜向時,則具有一發光強 度介於第一方向15及第三方向17之發光強度。 在習知之發光二極體裝置1中,波長轉換物質係均勻分佈於封 裝層13中’並且由於發光二極體晶粒12之發光強度隨角度而不 同,因此’藉由波長轉換物質所轉換出的白光波長,亦隨著角度 變化而改變》更詳細而言’於第三方向17,發光二極體晶粒12 之光線強度較弱’因此發光二極體晶粒12在第三方向17上發出 之藍光將可以受到波長轉換物質較充份之轉換,而使發光二極體 裝置1在第三方向17上具有一較偏黃之白光。相對地,於第一方 向15 ’發光二極體晶粒12之光線強度較強,因此,大部分之藍光 將直接穿透封裝層13,導致發光二極體裝置1在第一方向15上將 具有一較偏藍之白光。 發光二極體裝置1所發出之光源顏色在各方向上不均勻之狀 況’將使得發光二極體裝置1所提供之白光品質不佳。有伊於此 提供一在各方向具有一均勻顏色之白光發光二極體,乃為此一業 界亟待解決的問題》 【發明内容】 本發明之主要目的在於提供一種發光二極體裝置,在各方向具 201128814 有一發光顏色均勻性,並且具有一較集中之發光強度。 為達上述目的,本發明提供一種發光二極體裝置,包含一基板、 一發光二極體晶粒以及一封裝主體。發光二極體晶粒係設置於基 板上,並且包含一頂面。封裝主體係設置於基板上,完全包覆發 光二極體晶粒,並且具有一第一封裝層、一第二封裝層及一透鏡 結構。其中,第一封裝層及第二封裝層之材料係包含一波長轉換 物質。第一封裝層係位於頂面上方,並且具有一相對於該第二封 裝層較高之波長轉換物質之重量百分比濃度,而第二封裝層適可 與透鏡結構一體成形。 綜上所述,本發明之發光二極體裝置藉由使該封裝主體具有不 同之封裝層,而使波長轉換物質於封裝主體中有不同之濃度分 佈。藉此,由發光二極體晶粒之各方向所發出之光線經過不同濃 度之波長轉換物質,而使各方向之光線受到近似程度之轉換,以 得到均勻之白光。同時,藉由該透鏡結構,發光二極體裝置所發 出之光線可以更集中於一方向射出。 在參閱圖式及隨後描述之實施方式後,該技術領域具有通常知 識者便可瞭解本發明之其它目的,以及本發明之技術手段及實施 態樣。 【實施方式】 第2圖所示係為本發明第一實施例之發光二極體裝置2。發光二 裝體裝置2具有一基板21、一發光二極體晶粒22及一封裝主體 23。於此實施例中,發光二極體晶粒22係為一垂直結構式設計 (Vertical chip design )之藍光發光二極體,並且具有一頂面221。 201128814 發光二極體晶粒之兩側分別設置有二電極27,其中於頂面221上 之電極27更藉由一金屬導電線電性連接至基板21上之另一電極 27 ^封裝主體23係完全包覆發光二極體晶粒22、電極27及該金 屬導電線,以對發光二極體晶粒22提供適當之保護能力。 雖然發光二極體晶粒22係向各方向投射光線,然而其中較大部 分之光線係由一主要發光強度方向28所投射而出,此主要發光強 度方向28亦即垂直於頂面221之一方向。隨著投射角度由主要發 光強度方向28往發光二極體晶粒22之側向29(即平行於頂面221 之方向)變化,發光強度將會隨之衰減。因此,在發光二極體裝 置2之主要發光強度方向28上,需提供濃度較為充足之波長轉換 物質,而使由發光二極體晶粒22所發出之藍光光線被轉換為黃光 的比例提高(即,較大比例之藍光被轉換為黃光),不致使朝向主 要發光強度方向28投射之白光偏藍。相對地,在發光二極體裝置 2之側向29上,需提供濃度較低之波長轉換物質,以降低發光二 極體晶粒22所發出之藍光光線被轉換為黃光之比例(即,使轉換 為黃光之藍光比例降低),而避免朝向側向29投射之白光偏黃。 為了達成上述目的,封裝主體23係包含第一封裝層24、第二封 裝層25。第一封裝層24係相應於主要發光強度方向28而設置於 發光二極體晶粒22之頂面221上方。較佳地,第一封裝層24係 利用内聚力而完全包覆發光二極體晶粒22之頂面221,而第二封 裝層25係完全包覆發光二極體晶粒22及第一封裝層24。本實施 例中,第一封裝層24及第二封裝層25之材料係實質上相同,該 材料包含由一封裝膠體及一波長轉換物質混合而成之材料。該封 201128814 裝膠體之一材質係選自環氧樹脂及矽掛脂所組成之群組,而該波 長轉換物質係可為一磷光體。其中,第一封裝層24之波長轉換物 質之重量濃度百分比,係相當地大於第二封裝層25之波長轉換物 質之重量濃度百分比。然而,上述僅用於說明,於其他實施例中, 第一封裝層24亦可僅實質上包覆頂面221之至少一部份。甚或, 第一封裝層24係僅位於頂面221上方而不與頂面221接觸。此外, 第二封裝層25亦可不需完全包覆第一封裝層24,使部分第一封裝 層24顯露於外。 ^ 藉此設置,由頂面221朝主要發光強度方向28所發出之藍光光 線,可以先行經過具有較高濃度之波長轉換物質之第一封裝層 24,而後再經過具有較低濃度之波長轉換物質之第二封裝層25, 使較大比例之藍光被波長轉換物質轉換為黃光。藉此,發光二極 體裝置2在主要發光強度方向28上將有足夠強度之黃光,以與未 被轉換之藍光混合成一理想顏色之白光,自主要發光強度方向28 射出,避免產生偏藍之白光。 • 另一方面,由發光二極體晶粒22朝側向29射出之藍光光線, 則將不會經過具有較高濃度之波長轉換物質之第一封裝層24,而 只會經過具有較低濃度之波長轉換物質之第二封裝層25。藉此, 由發光二極體裝置2朝側向29所發出之藍光光線,將不會因過多 比例之藍光被轉換為黃光,造成黃光比例增加,導致朝側向29投 射之整體白光偏黃。 藉由上述之揭露,係可使發光二裝體裝置2於各方向所產生之 白光波長範圍更為集中,避免造成偏藍或偏黃之白光,因此可以 201128814 提供一較為均勻之白光。此外,藉由降低第二封裝層25中波長轉 換物質之濃度,減少發光二極體晶粒22所發出之光線能量被波長 轉換物質所吸收,使光阻降低,亦可提高發光二裝體裝置2之整 體亮度。 在實際應用上,舉例而言,第一封裝層24之波長轉換物質之重 量百分比濃度係介於5%至2〇%之間,第二封裝層25之該波長轉 換物質之重量百分比度係介於0.5至3%之間,可以使得發光二極 體裝置2所發出之光線,在各方向性上均能提供較佳之白光光源。 此外第二封裝層25之材料,更可包含一擴散劑,以使發光二極體 裝置2内之藍光與黃光更均勻地被混光,使整體之光線更為柔和、 視覺效果更佳。第二封裝層25所含之擴散劑濃度,舉例而言,係 在小於10%之重量百分比濃度時可以使整體光線品質有較佳之效 果0 為了進-步調整發光二極體裝置2之主要光線以預定角度投射 出’封裝主體23更可包含-透鏡結構26,設置於第二封裝層25 之上。較佳地,透鏡結構%係與第二封裝層25 一體成型,藉以 控制光線投射方向。上述僅用於說明,於其他實施例中,若第一 封裝層24之部分顯露於外,則透鏡結構26亦可設置於第一封裝 層24之上,並與第一封裝層24 一體成型。 第3圖所示係為本發明第二實施例之發光二極體裝置3。於此 施例中,發光二極體裝置3所具有之發光二極體晶粒U,係為二 及一第 .次頂面223。封裝主體23係、包含—第—封裝層2心 向結構式設計(Lateral chip design),並且且有 s ^ 5 第'次頂面2: 201128814 一封裝層25及-透鏡結構26。第-封裝層24係、完全包覆發光二 極體晶粒22乂第一次頂面222及第二次頂面223。於本實施例中 之發光二極體晶粒22,所具有之發光強度分佈,雖與第—實施例中 之發光二極體晶粒22有所差異(於一側向29具有相對於發光二 極體裝置2較大之發光強度然;而利用各封裝層具有不同波長轉 換物質之濃度’亦可改善發光二極體裝置3光源均勾性,以提供 一較佳視覺效果之白光。詳細之設置方式相似於上述實施例,於 此不再加以贅述。 綜上所述,本發明提供一發光二極體裝置,藉由具有不同濃度 之波長轉換物質之封裝層,相較於習知技術,係可提供一較為均 勻之白光。同時,利用透鏡結構的設置,亦可使發光二極體裝置 之光線射出方向得以被控制。 上述實施例僅為例示性說明本發明之原理及其功效,以及闡釋 本發明之技術特徵,而非用於限制本發明之保護範疇。任何熟悉 本技術者之人士均可在不違背本發明之技術原理及精神的情況 下,可輕易完成之改變或均等性之安排均屬於本爹明所主張之範 圍。因此,本發明之權利保護範圍應如後述之申請專利範圍所列。 【圖式簡單說明】 第1圖係習知之白光發光二極體裝置示意圖; 第2圓係本發明第一實施例之發光二極體裝置示意圖;以及 第3圖係本發明第二實施例之發光二極體裝置示意圖。 201128814 【主要元件符號說明】 1 :發光二極體裝置 11 :基板 12 :發光二極體晶粒 13 :封裝層 14 :電極 15 :第一方向 16 :第二方向 17 :第三方向 2:發光二極體裝置 21 :基板 22 :發光二極體晶粒 22’ :發光二極體晶粒 221 :頂面 222 :第一次頂面 223 :第二次頂面 23 :封裝主體 24 :第一封裝層 25 :第二封裝層 26 :透鏡結構 27 :電極 28 :主要發光強度方向 29 :側向 3:發光二極體裝置201128814 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode device; and more particularly to a light-emitting diode device having a wavelength-converting substance having a non-uniform concentration distribution. [Prior Art] Since the light-emitting diode has the advantages of small size, fast response, high efficiency, and long life, it has a wide application space for both illumination of the display and ambient illumination. In the early days, the light-emitting diode system was a light-emitting diode of monochromatic light. Therefore, it is necessary to simultaneously mix a plurality of light-emitting diode crystals of different colors to provide a light source of white light. However, the white light emitting diode device fabricated by such a method is costly and unfavorable for industrial applications. Therefore, with the development of the manufacturing technology of the light-emitting diode, a light-emitting diode device which can generate white light using a single crystal grain has been proposed. Fig. 1 is a schematic view of a conventional white light emitting diode device 1 having a single crystal grain. The LED device 1 comprises a substrate n, a light-emitting diode die 12, an electrode 14 and an encapsulation layer 13. The light-emitting diode die 12 is a blue light-emitting diode trimmed and disposed on the electrode 14 of the substrate. The top portion of the light-emitting diode die 12 is also provided with an electrode 14' and is connected to the electrode 14 on the substrate by a gold-cored conductive wire. The encapsulation layer 13 is composed of a colloid and contains, for example, a wavelength conversion substance of phosphor powder. The blue light emitted by the light-emitting diode die 12 will have a part directly exiting the light-emitting diode device 1, and another portion is converted into yellow light by the wavelength-converting substance, and then emits a light-emitting one-pole device. When Huang Guang is observed by the user at the same time, the effect of blue light and yellow light is equivalent to a white light. 201128814 However, the light source emitted by the light-emitting diode die 12 is not a uniform light source in directionality. In general, as shown in FIG. 1, the light-emitting diode die 12 will have the strongest luminous intensity in a longitudinal direction (i.e., 90°) as in the first direction 15, and will increase and decrease with increasing angle. And reduce the luminous intensity at this angle. That is, in the lateral direction (i.e., 〇 or 18 〇) of one of the third directions 17, the light-emitting diode crystal grains have a minimum luminous intensity, and when one of the second directions 16 is oblique, There is a luminous intensity of a luminous intensity between the first direction 15 and the third direction 17. In the conventional light-emitting diode device 1, the wavelength converting substance is uniformly distributed in the encapsulating layer 13' and since the luminous intensity of the light-emitting diode crystal 12 varies with angle, it is converted out by the wavelength converting substance. The white light wavelength also changes with the angle change. In more detail, in the third direction 17, the light intensity of the light-emitting diode die 12 is weak, so the light-emitting diode die 12 is in the third direction 17 The emitted blue light will be more fully converted by the wavelength converting material, so that the light emitting diode device 1 has a more yellowish white light in the third direction 17. In contrast, the light intensity of the LED diode 12 in the first direction is relatively strong. Therefore, most of the blue light will directly penetrate the encapsulation layer 13, causing the LED device 1 to be in the first direction 15 It has a more bluish white light. The fact that the color of the light source emitted from the light-emitting diode device 1 is uneven in all directions will cause the white light quality provided by the light-emitting diode device 1 to be poor. There is a white light emitting diode having a uniform color in all directions, which is an urgent problem to be solved in the industry. [The present invention] The main object of the present invention is to provide a light emitting diode device in each The direction tool 201128814 has a luminous color uniformity and has a relatively concentrated luminous intensity. To achieve the above objective, the present invention provides a light emitting diode device comprising a substrate, a light emitting diode die, and a package body. The light emitting diode die is disposed on the substrate and includes a top surface. The package main system is disposed on the substrate, completely encasing the light emitting diode die, and has a first encapsulation layer, a second encapsulation layer and a lens structure. The material of the first encapsulation layer and the second encapsulation layer comprises a wavelength converting substance. The first encapsulation layer is above the top surface and has a weight percent concentration of a higher wavelength converting material relative to the second encapsulation layer, and the second encapsulation layer is adapted to be integrally formed with the lens structure. In summary, the light-emitting diode device of the present invention has a different concentration distribution of the wavelength converting substance in the package body by having the package body have different encapsulation layers. Thereby, the light emitted from the directions of the light-emitting diode grains passes through the wavelength conversion substances of different concentrations, so that the light in each direction is converted to an approximate degree to obtain uniform white light. At the same time, with the lens structure, the light emitted by the light-emitting diode device can be more concentrated in one direction. Other objects of the present invention, as well as the technical means and embodiments of the present invention, will be apparent to those skilled in the art in view of the appended claims. [Embodiment] Fig. 2 shows a light-emitting diode device 2 according to a first embodiment of the present invention. The light-emitting device 2 has a substrate 21, a light-emitting diode die 22, and a package body 23. In this embodiment, the LED die 22 is a vertical chip design blue light emitting diode and has a top surface 221 . A two-electrode 27 is disposed on each side of the light-emitting diode die. The electrode 27 on the top surface 221 is electrically connected to the other electrode 27 on the substrate 21 by a metal conductive wire. The light-emitting diode die 22, the electrode 27 and the metal conductive wire are completely coated to provide appropriate protection to the light-emitting diode die 22. Although the light-emitting diode die 22 projects light in all directions, a larger portion of the light is projected from a main light-intensity direction 28, which is perpendicular to the top surface 221 direction. As the projection angle changes from the direction of the main light intensity 28 to the side 29 of the light-emitting diode die 22 (i.e., parallel to the top surface 221), the intensity of the light will be attenuated. Therefore, in the main light-emission intensity direction 28 of the light-emitting diode device 2, it is necessary to provide a wavelength conversion substance having a sufficient concentration, so that the proportion of the blue light emitted by the light-emitting diode crystal 22 is converted into yellow light. (ie, a larger proportion of the blue light is converted to yellow light) so that the white light projected toward the main illumination intensity direction 28 is not bluish. In contrast, in the lateral direction 29 of the light-emitting diode device 2, a lower concentration of the wavelength converting substance is required to reduce the ratio of the blue light emitted by the light-emitting diode die 22 to yellow light (ie, to convert The ratio of the blue light to the yellow light is reduced, and the white light projected toward the lateral direction 29 is prevented from being yellowish. In order to achieve the above object, the package body 23 includes a first encapsulation layer 24 and a second encapsulation layer 25. The first encapsulation layer 24 is disposed over the top surface 221 of the LED die 22 in response to the primary illumination intensity direction 28. Preferably, the first encapsulation layer 24 completely covers the top surface 221 of the LED die 22 by cohesive force, and the second encapsulation layer 25 completely encapsulates the LED die 22 and the first encapsulation layer. twenty four. In this embodiment, the materials of the first encapsulation layer 24 and the second encapsulation layer 25 are substantially the same, and the material comprises a mixture of an encapsulant and a wavelength conversion material. One of the materials of the 201128814 gel is selected from the group consisting of epoxy resin and enamel grease, and the wavelength conversion material may be a phosphor. The weight concentration percentage of the wavelength conversion substance of the first encapsulation layer 24 is substantially greater than the weight concentration percentage of the wavelength conversion substance of the second encapsulation layer 25. However, the above description is for illustrative purposes only. In other embodiments, the first encapsulation layer 24 may only substantially cover at least a portion of the top surface 221 . Or even, the first encapsulation layer 24 is only above the top surface 221 and not in contact with the top surface 221. In addition, the second encapsulation layer 25 may not completely cover the first encapsulation layer 24, so that part of the first encapsulation layer 24 is exposed. ^ By this arrangement, the blue light emitted from the top surface 221 toward the main light intensity direction 28 can pass through the first encapsulation layer 24 having a higher concentration of the wavelength conversion substance, and then pass through the wavelength conversion substance having a lower concentration. The second encapsulation layer 25 converts a large proportion of blue light into yellow light by the wavelength converting substance. Thereby, the light-emitting diode device 2 will have sufficient intensity of yellow light in the main luminous intensity direction 28 to mix with the unconverted blue light into a desired color of white light, which is emitted from the main luminous intensity direction 28 to avoid bluing. White light. • On the other hand, the blue light emitted by the light-emitting diode die 22 toward the lateral direction 29 will not pass through the first encapsulation layer 24 having a higher concentration of the wavelength converting substance, but only after having a lower concentration. The second encapsulation layer 25 of the wavelength converting substance. Thereby, the blue light emitted by the light-emitting diode device 2 toward the lateral direction 29 will not be converted into yellow light due to an excessive proportion of blue light, resulting in an increase in the proportion of yellow light, resulting in an overall white light shift projected toward the lateral direction 29. yellow. According to the above disclosure, the wavelength range of white light generated by the light-emitting two-body device 2 in each direction is more concentrated to avoid white light which is bluish or yellowish, so that a relatively uniform white light can be provided by 201128814. In addition, by reducing the concentration of the wavelength converting substance in the second encapsulating layer 25, the light energy emitted by the light emitting diode die 22 is reduced by the wavelength converting substance, so that the photoresist is reduced, and the light emitting device can be improved. 2 overall brightness. In practical applications, for example, the weight percentage of the wavelength conversion substance of the first encapsulation layer 24 is between 5% and 2%, and the weight percentage of the wavelength conversion substance of the second encapsulation layer 25 is Between 0.5 and 3%, the light emitted by the LED device 2 can provide a better white light source in all directions. In addition, the material of the second encapsulation layer 25 may further comprise a diffusing agent to make the blue light and the yellow light in the LED device 2 more uniformly mixed, so that the overall light is softer and the visual effect is better. The concentration of the diffusing agent contained in the second encapsulating layer 25, for example, can achieve a better overall light quality at a concentration of less than 10% by weight. 0 In order to further adjust the main light of the LED device 2 Projecting at a predetermined angle 'the package body 23 may further include a lens structure 26 disposed on the second encapsulation layer 25. Preferably, the lens structure % is integrally formed with the second encapsulation layer 25 to control the direction in which the light is projected. The foregoing is only for illustration. In other embodiments, if a portion of the first encapsulation layer 24 is exposed, the lens structure 26 may also be disposed on the first encapsulation layer 24 and integrally formed with the first encapsulation layer 24. Fig. 3 shows a light-emitting diode device 3 according to a second embodiment of the present invention. In this embodiment, the LED body U of the light-emitting diode device 3 is a second and a second top surface 223. The package body 23 is comprised of a first package layer 2 and has a s ^ 5 first top surface 2: 201128814 an encapsulation layer 25 and a lens structure 26. The first encapsulation layer 24 is completely covered with the light emitting diode die 22, the first top surface 222 and the second top surface 223. The illuminating intensity distribution of the illuminating diode dies 22 in the present embodiment is different from that of the illuminating diode dies 22 in the first embodiment (the lateral direction 29 has a relative light emission The polar light intensity of the polar body device 2 is large; and the concentration of the different wavelength converting substances in each of the packaging layers can also improve the light source uniformity of the light emitting diode device 3 to provide a white light with better visual effect. The arrangement is similar to the above embodiment, and will not be further described herein. In summary, the present invention provides a light emitting diode device with an encapsulation layer having different concentrations of wavelength converting substances, compared with the prior art. It can provide a relatively uniform white light. At the same time, the arrangement of the lens structure can also control the light emission direction of the light emitting diode device. The above embodiments are merely illustrative of the principle and function of the present invention, and The technical features of the present invention are explained, and are not intended to limit the scope of protection of the present invention. Anyone skilled in the art can do without departing from the technical principles and spirit of the present invention. The arrangement that can be easily changed or equalized is within the scope claimed by the present invention. Therefore, the scope of protection of the present invention should be as listed in the scope of the patent application described later. [Simple description of the drawing] Schematic diagram of a white light emitting diode device; a second circle is a schematic diagram of a light emitting diode device according to a first embodiment of the present invention; and Fig. 3 is a schematic view of a light emitting diode device according to a second embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 : Light-emitting diode device 11 : Substrate 12 : Light-emitting diode die 13 : Package layer 14 : Electrode 15 : First direction 16 : Second direction 17 : Third direction 2 : Light-emitting diode device 21: substrate 22: light-emitting diode die 22': light-emitting diode die 221: top surface 222: first top surface 223: second top surface 23: package body 24: first package layer 25: Second encapsulation layer 26: lens structure 27: electrode 28: main luminous intensity direction 29: lateral 3: light emitting diode device

Claims (1)

201128814 七、申請專利範圍: 1. 一種發光二極體裝置,包含: 一基板; 一發光二極體晶粒,設置於該基板上,並且包含一頂面; 以及 -封裝主體,設置於該基板上’完全包覆該發光二極體 晶粒’並且具有一第一封裝層及一第二封裝層; 其中該第一封裝層及該第一封裝層之材料係包含一波長 φ 轉換物質,該第一封裝層係位於該頂面上方,並且具有一相 對於該第二封裝層較高之該波長轉換物質之重量百分比濃 度。 2·如請求項1所述之發光二極體裝置’其中該第—封裝層係實 質上包覆該頂面之至少一部分。 3. 如請求項2所述之發光二極體裝置,其中該封裝主體更包含 一透鏡結構,設置於該第一封裝層及該第二封裝層之上。 4. 如請求項3所述之發光二極體裝置,其中該透鏡結構係與該 •第二封裝層-體成型。 5. 如請求項1所述之發光二極體裝置’其中該頂面具有一第一 次頂面及一第二次頂面,該第一封裝層係包覆該第一次頂面 及該第二次頂面之至少一部分。 6. 如請求項2所述之發光二極體裝置,其中該第二封裝層係完 全包覆該第一封裝層。 7. 如請求項6所述之發光二極體裝置’其中該第二封裝層之材 料更包含一擴散劑。 201128814 8.如請求項7所述之發光二極體裝置,其中該第一封裝層之該 波長轉換物質之重量百分比濃度係介於5%至20°/。之間,該第 二封裝層之該波長轉換物質之重量百分比度係介於0 5至3% 之間。 9·如請求項8所述之發光二極體裝置,其中該第二封裝層之該 擴散劑之重量百分比濃度係小於10%。 10.如請求項9所述之發光二極體裝置,其中該第一封裝層及該 第二封裝層之材料更包含一封裝膠體。 u·如請求項10所述之發光二極體裝置,其中該封裝膠體之一材 質係選自環氧樹脂及矽樹脂所組成之群組。 12.如請求項1所述之發光二極體裝置,其中該發光二極體晶粒 係為一藍光發光二極體晶粒’該波長轉換物質係為一碟光體。 U.如請求項1所述之發光二極體裝置,其中垂直於該頂面之一 方向係為該發光二極體晶粒之主要發光強度方向。201128814 VII. Patent application scope: 1. A light-emitting diode device comprising: a substrate; a light-emitting diode die disposed on the substrate and including a top surface; and a package body disposed on the substrate Upper 'overlying the light-emitting diode die' and having a first encapsulation layer and a second encapsulation layer; wherein the first encapsulation layer and the material of the first encapsulation layer comprise a wavelength φ conversion substance, The first encapsulation layer is above the top surface and has a higher concentration of the wavelength conversion material relative to the second encapsulation layer. 2. The light-emitting diode device of claim 1, wherein the first encapsulation layer substantially covers at least a portion of the top surface. 3. The LED device of claim 2, wherein the package body further comprises a lens structure disposed on the first encapsulation layer and the second encapsulation layer. 4. The light emitting diode device of claim 3, wherein the lens structure is formed with the second encapsulation layer. 5. The illuminating diode device of claim 1, wherein the top mask has a first top surface and a second top surface, the first encapsulating layer covering the first top surface and the At least a portion of the second top surface. 6. The light emitting diode device of claim 2, wherein the second encapsulation layer completely encapsulates the first encapsulation layer. 7. The light-emitting diode device of claim 6, wherein the material of the second encapsulation layer further comprises a diffusing agent. The light-emitting diode device of claim 7, wherein the wavelength-converting substance of the first encapsulating layer has a concentration by weight of 5% to 20°/. The weight percentage of the wavelength converting substance of the second encapsulating layer is between 0 5 and 3%. 9. The light-emitting diode device of claim 8, wherein the second encapsulating layer has a concentration percentage of the diffusing agent of less than 10%. 10. The LED device of claim 9, wherein the material of the first encapsulation layer and the second encapsulation layer further comprises an encapsulant. The light-emitting diode device of claim 10, wherein one of the encapsulants is selected from the group consisting of epoxy resins and resin resins. 12. The light-emitting diode device of claim 1, wherein the light-emitting diode crystallite is a blue light-emitting diode die. The wavelength converting material is a light-emitting body. U. The illuminating diode device of claim 1, wherein a direction perpendicular to one of the top faces is a main illuminating intensity direction of the illuminating diode dies. 1212
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474967B (en) * 2011-07-14 2015-03-01 Getters Spa Improvements to phosphors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474967B (en) * 2011-07-14 2015-03-01 Getters Spa Improvements to phosphors

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