TW201127747A - Manufacturing method for AlN - Google Patents

Manufacturing method for AlN Download PDF

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TW201127747A
TW201127747A TW99104597A TW99104597A TW201127747A TW 201127747 A TW201127747 A TW 201127747A TW 99104597 A TW99104597 A TW 99104597A TW 99104597 A TW99104597 A TW 99104597A TW 201127747 A TW201127747 A TW 201127747A
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Taiwan
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reactant
powder
aluminum
heating
nitrogen
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TW99104597A
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Chinese (zh)
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TWI401206B (en
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Shyan-Lung Chung
Chun-Nan Lin
Chih-Wei Chang
Jing-Hsin Lin
Hung-Ying Lin
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Univ Nat Cheng Kung
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Priority to JP2011002064A priority patent/JP5369123B2/en
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Abstract

A manufacturing method for AlN comprises mixing Al powder and a modifying agent as a reactant and placing it into a container; exposing the reactant in the container to a nitrogenous gas and heating the reactant to over and above 660 DEG C to combustion wherein the modifying agent and the reactant proceeding a surface modifying reaction to form a ceramic layer on the surface of the Al powder having a combustion reaction with the nitrogenous gas to form AlN.

Description

201127747 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種氮化鋁之製備方法。 【先前技術】 氮化鋁由於具有優越的熱傳導性,良好的電絕緣性, 低熱膨脹率,良好的抗熱震性與良好的抗侵蝕性,近年來 ,已成為工業上極為重要的材料。它在許多高科技的工業 上極具應用潛力,例如可作為積體電路封裝材料及高熱傳 導複合材料使用,亦可應用於電子基板、高功率led晶片 載板、電子元件散熱體或耐高溫容器之製作。 目前習用氮化鋁之製備方法通常係分為氣相反應法 、有機金屬前驅物法、氧化Is粉碳素還原氮化法、金屬產呂 直接氮化法及燃燒合成法等。 以習用氣相反應法而言,反應式如式(1 )所示,其 主要係於900K至1500K之溫度進行操作5小時以上,以 反應生成結晶形及非晶形之氮化鋁( A1N)粉體。201127747 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for preparing aluminum nitride. [Prior Art] Aluminum nitride has become an extremely important material in the industry in recent years due to its excellent thermal conductivity, good electrical insulation, low thermal expansion rate, good thermal shock resistance and good corrosion resistance. It has great application potential in many high-tech industries, such as integrated circuit packaging materials and high thermal conductivity composite materials, and can also be applied to electronic substrates, high-power LED wafer carrier boards, electronic component heat sinks or high temperature resistant containers. Production. At present, the preparation methods of conventional aluminum nitride are generally classified into a gas phase reaction method, an organic metal precursor method, an oxidized Is powder carbon reduction nitridation method, a metal ruthenium direct nitridation method, and a combustion synthesis method. In the conventional gas phase reaction method, the reaction formula is as shown in the formula (1), which is mainly operated at a temperature of 900 K to 1500 K for 5 hours or more to react to form a crystalline and amorphous aluminum nitride (A1N) powder. body.

AlCl3(g)+ 4NH3(g) -+ A]N(S) +3 ΝΗ4〇(&).·· ( 1 ) 然而,該氣相反應法所需反應時間需達5小時以上, 且一般產物之轉化率僅約為80%,生產成本高且產率小, 不適合工業生產。 以習用有機金屬前驅物法而言,反應式如式(2)〜 (5 )所示,其係於400Κ至1000Κ之溫度下進行操作,所 需反應時間為10至240分鐘,反應當中,烷基(R)會裂解 產生破,必須再將產物置於空氣中加熱除碳,此一步驟可 201127747 能導致氧含量增加。 R3A1(1)+NH3(1)-»R3A1NH3(1)................ (2) R3A1NH3(!) ^ R2A1NH2(I) +RH(g)............ (3) R2AINH2⑴-> RA1NH(丨)+RH(g)............. (4) RAlNH(i) 4 A1N⑻ +RH(g)................... ( 5 ) 此外,此方法亦有步驟繁複、耗能源、成本高、產率 低的問題,而不適合工業生產。AlCl3(g)+ 4NH3(g) -+ A]N(S) +3 ΝΗ4〇(&). (1) However, the reaction time required for the gas phase reaction method needs to be more than 5 hours, and generally The conversion of the product is only about 80%, the production cost is high and the yield is small, which is not suitable for industrial production. In the conventional organometallic precursor method, the reaction formula is as shown in the formulas (2) to (5), and the operation is carried out at a temperature of from 400 Torr to 1000 Torr, and the reaction time is required to be from 10 to 240 minutes. The base (R) will crack and break, and the product must be placed in air to heat and remove carbon. This step can lead to an increase in oxygen content at 201127747. R3A1(1)+NH3(1)-»R3A1NH3(1)................ (2) R3A1NH3(!) ^ R2A1NH2(I) +RH(g).. .......... (3) R2AINH2(1)-> RA1NH(丨)+RH(g)............. (4) RAlNH(i) 4 A1N(8) +RH (g)................... (5) In addition, this method has the problems of complicated steps, energy consumption, high cost and low yield, and is not suitable for industrial production. .

以習用氧化鋁粉碳素還原氮化法而言,反應式如式( 6)所示。其係將氧化鋁粉及碳粉均勻混合,並於1500K 至2200K之溫度環境下進行反應以獲得氮化鋁產物,所需 反應時間亦需5小時以上。In the conventional aluminum oxide powder carbon reduction nitridation method, the reaction formula is as shown in the formula (6). The alumina powder and the carbon powder are uniformly mixed and reacted at a temperature of 1500 K to 2200 K to obtain an aluminum nitride product, and the reaction time is required to be more than 5 hours.

Al203(s)+ N2(s) + 3C(s)— 2A1N⑸ +3CO(g)... (6) 然而’該習用氧化鋁粉碳素還原氮化法仍須於高溫下 反應五小時至數十小時’因此具有耗時耗能之缺點;再立 ’為了使运原氣化反應完全,必須加入過量的;g炭粉進行反 應,而添加過量的碳粉將會需要再進一步利用高溫去除殘 碳’因此需要消耗更多的熱能;再且,以高盈氧化方气☆ 碳過程中,又可能造成氮化鋁粉之氧含量提升,而'告 : 化鋁之熱傳導率大幅降低,而造成氮化鋁粉的品質;卩久氣 以習用金屬鋁直接氮化法而言,反應式如式(?)牛 示。其係於1000Κ至1500Κ之溫度環境下進行操作,戶= 反應時間5小時以上。 木 斤需 2Al(s)+ N2(s) 2AlN(s)................ (7) 然而’該金屬鋁直接氮化法亦需在高溫下進行五 至數十小時之操作方能完成反應,因而亦有乾時、丁耗時 匕白勺 201127747 問題。此外,該習用金屬鋁直接氮化法在高溫反應過程中 ’铭粉會因為高溫融聚,而形成塊狀之鋁,造成氮氤無法 餐入該塊狀铭内,使得反應無法進行。因此必須在反應過 程中,暫停反應,於冷卻後將鋁粉及產生融聚之塊狀鋁取 出研磨’再形成顆粒狀之鋁粉,再放入高溫爐中反應,如 此重複數次,才能使氮氣與鋁粉充分接觸,而達到高的轉 化率。如此,造成該金屬鋁直接氮化法具有製程繁複之缺 點;再且,該多次研磨之程序亦將引入雜質,使得該習用 金屬鋁直接氮化法除了耗時及耗能之外,尚有步驟繁複、 純度無法提高以及雜質含量高的缺點。 前述習用氣相反應法、有機金屬前驅物法、氧化鋁粉 碳素還原氮化法及金屬紹直接氮化法主要係具有反應時間 過長之缺點,而下述之燃燒合成法由於反應時間相對較翅 ’因此可克服前述該些習用氮化鋁之製備方法所造成時間 成本較高之缺點。 以習用燃燒合成法而言,其反應式亦如式(7 )所示 。以下針對各個習用燃燒合成法之相關技術簡述如下: (a)在日本特許公開公報昭第63-274605號專利申請 案,係將鋁、氮化鋁與其他化合物[例如碳酸鈣(CaC〇3)、 硝酸鈣(Ca(N〇3)2),氧化釔(y2〇3)、碳酸鋇(BaC03)、硝竣 鋇(Ba(N03)2)、硝酸紀(Y(N〇3)3)、氧化鈽(Ce〇2)或含水草峻 釔(Y2(C2〇4)2 . 8H2〇)]以適當比例混合後,壓成適當形狀, 再將其置於50大氣壓之氮氣中,使用電熱片加熱以點燃反 應’而合成氮化鋁(A1N)粉體。 然而’該曰本特許公開公報昭第63-274605號專利申 201127747 請案以50大氣壓之高壓進行反應,所使用之高壓將大幅提 昇製程危險性;再且,其亦f使用可對應產生高壓環境之 設備進行反應,將造成整體設備及操作成本的增加。 中,係將鋁與氮化鋁粉末以適當比例混合後 耐火容器中,再將此整體置於液態氮中,Al203(s)+ N2(s) + 3C(s)— 2A1N(5) +3CO(g)... (6) However, the conventional aluminum oxide carbon reduction nitridation method still needs to react at high temperature for five hours to several Ten hours' therefore has the disadvantage of time-consuming and energy-consuming; in order to make the gasification reaction complete, it is necessary to add an excess; g carbon powder to carry out the reaction, and adding excessive carbon powder will require further use of high temperature to remove the residue. Carbon' therefore needs to consume more heat; moreover, it can cause the oxygen content of aluminum nitride powder to increase in the process of carbon oxidation ☆ carbon, and 'said: the thermal conductivity of aluminum is greatly reduced, resulting in The quality of aluminum nitride powder; the long-term gas is the conventional direct method of metal aluminum nitridation, and the reaction formula is as shown in the formula (?). It is operated at a temperature of 1000 Κ to 1500 ,, and the reaction time is 5 hours or more. Mujin needs 2Al(s)+ N2(s) 2AlN(s)................ (7) However, the metal aluminum direct nitridation method also needs to be carried out at high temperature. Five to several tens of hours of operation can complete the reaction, so there are also problems with the 201127747 problem. In addition, the conventional metal aluminum direct nitriding method in the high-temperature reaction process, the powder will form a block of aluminum due to high temperature melting, causing the nitrogen bismuth not to be eaten into the block, making the reaction impossible. Therefore, it is necessary to suspend the reaction during the reaction. After cooling, the aluminum powder and the agglomerated aluminum which is melted are taken out and ground to form a granular aluminum powder, which is then placed in a high temperature furnace for reaction, and this is repeated several times. Nitrogen is in full contact with the aluminum powder to achieve high conversion. Thus, the direct nitriding method of the metal aluminum has the disadvantages of complicated processing; further, the process of the multiple grinding will introduce impurities, so that the conventional direct nitriding method of metal aluminum has time and energy consumption, The steps are complicated, the purity cannot be improved, and the impurity content is high. The above-mentioned conventional gas phase reaction method, organometallic precursor method, alumina powder carbon reduction nitridation method and metal sulphide direct nitriding method mainly have the disadvantages of excessive reaction time, and the following combustion synthesis method has relatively short reaction time. The relatively fins' can thus overcome the disadvantages of the high time cost caused by the preparation methods of the conventional aluminum nitrides described above. In the conventional combustion synthesis method, the reaction formula is also shown in the formula (7). The following is a brief description of the related art for each conventional combustion synthesis method: (a) Patent application No. 63-274605 to Japanese Patent Application Laid-Open No. Hei No. 63-274605, which is incorporated herein by reference. ), calcium nitrate (Ca(N〇3)2), yttrium oxide (y2〇3), barium carbonate (BaC03), barium nitrate (Ba(N03)2), nitric acid (Y(N〇3)3) , cerium oxide (Ce〇2) or aqueous grass 钇 (Y2 (C2〇4) 2. 8H2 〇)], mixed in an appropriate ratio, pressed into a suitable shape, and then placed in a nitrogen atmosphere of 50 atm, using electric heating The sheet is heated to ignite the reaction' to synthesize aluminum nitride (A1N) powder. However, the patent application of the Japanese Patent Application Laid-Open No. 63-274605, 201127747, is applied at a high pressure of 50 atmospheres, and the high pressure used will greatly increase the process risk. Moreover, it can also be used to generate a high pressure environment. The reaction of the equipment will result in an increase in overall equipment and operating costs. In the refractory container, the aluminum and aluminum nitride powder are mixed in an appropriate ratio, and then the whole is placed in liquid nitrogen.

(b)在日本特許公開公報昭第64-76906號專利申請案 後,盛裝於多孔 使用電熱線點燃 ^公報昭第64-76906號專利申請 案所使用之液,悲氮的溫度甚低,其亦將增加設備與操作之 成本及操作上之複雜性與危險性。 (C)在日本特許公開公報昭第64-76905號專利申請案 中’係將IS與含氮m化合物[如疊氮仙⑽⑹、疊氣 化鉀(KNS)或4氮化鋇伽机)等]之粉體以適當比例混合後 置於而寸火容器中’混合後之粉體上方設置有引燃劑,再將 該混合後之粉體及引燃劑置於電熱爐中,並於壓力小於1〇 φ kg/C〇r之氮氣環境下進行反應。反應開始前先開啟電熱爐 加熱反應物’再使用電熱線加熱以點燃引燃劑,而後點燃 合成氮化銘之燃燒合成反應,而合成氮他粉體。 (d) 在中華民國公告第247897號專利,及美國第 5,460,794 #。專利中,兩案係使用|呂粉與固態含氮化合物為 ' 原料,二者之混合粉末經模壓成型後,以引燃劑完全包覆 - ,置於充滿氮氣之岔閉容器中,加熱點燃引燃劑,而產生 燃燒合成反應形成氮化鋁粉體。 (e) 在中華民國公告第226987號專利,及美國專利第 5,453,407號,兩案中係使用在呂粉與固態含氣化合物為原料 201127747 ,並添加ii化敍鹽類,再將此三者之混合粉末模壓成型後 ,以引燃劑完全包覆,置於充滿氮氣之密閉容器中,加熱 點燃?丨燃劍,合成反應隨之被點燃而合成氮化铭粉體。 前述日本特許公開公報昭第64-76905號、中華民國第 247897號專利及中華民國第226987號專利雖可降低該曰 本特許公開公報昭第63-274605號及第64_769〇6號專利中 的&又備操作危性,然而,為使反應能以自行傳播之燃燒 方式進行,此固態含I化合物必須為易於熱分解之化合物 ,使得該固態含氮化合物經熱分解後所產生之氮氣能可與 鋁粉進行反應。然而,該固態含氮化合物經熱分解後所產 生之氮氣可能造成尚壓或是氮氣逸出而造成使反應無法進 行之問題。 (f) 在中華民國第86103021號專利申請案,及美國專 利第5,846,5〇8 ’皆係使用铭粉與齒化銨鹽類為原料, -者之混合粉末模壓成型,或置於—具開口或多孔之耐高 溫容器内,再置於充滿氮氣之密閉容器中,經加熱點燃反 應’而生成氮化鋁粉體。 (g) 在中華民國f 86117545號專利申請案,係使用|呂 粉與含ΝΗΧ«素且在贿,fUx下可分解或氣化之化合物 為原料,以適當比例混合後置於一具開口或多孔之耐高溫 容器内’或成適當形狀再將之£於充滿氮氣之密閉容 态中,加熱點燃反應後,合成氮化銘粉體。 刖述中華民國第86103021號及第86117545號專利申 δ月案透過於|呂粉中添加齒化銨鹽或於銘熔點以下可分解之 含鹵素之化合物可在低氮壓下獲得高的產率,雖可 201127747 避免前述日本特許公開公報昭第64-76905號、中華民國第 247897號專利及中華民國第226987號專利因添力α固態含 氮化合物而造成高壓之缺點,但是於反應過程中會產生氣 化氫(HC1)、氨(ΝΗ3)、氣化銨(NH4C1)、氯(Cu)或 碳(C)等副產物,會增加後續處理的繁複性與操作成本 〇 (h)美國公告第5649278號專利中,係使用鉈粉為反 應物’並加入20wt %至80 wt % (以鋁粉與氮化鋁粉之總重 量為基準)之氮化紹粉為稀釋劑,兩者混合後所形成之粉體 混合物置於石墨坩堝或氧化物陶瓷等耐高溫容器中,並使 此粉體混合物之密度介於0.5〜1.5 g/cm3之間,再將之置於 充滿氮氣之反應器中,在0.75〜30大氣壓(atm)之氮氣壓 力下,加熱點燃燃燒合成反應,而生成氮化鋁粉體。 然而,該美國公告第5649278號專利中雖可防止紹粉 融聚,維持氮氣流通,而獲得較高的轉化率,並避免如中 華民國第86103021號及第86117545號專利申請案需對副 產物進一步去除之缺點,但是製程中須有先將鋁粉與氮化 鋁混合均勻的步驟,且稀釋劑的含量須高達30 wt %以上 ’才能得到較高的轉化率,此舉亦增加了製程的繁複性與 操作成本,且降低了每單位重量之進料量所能合成的氮化 紹的產能。此外,該粉體混合物的密度須介於〇.5g/ cm3與 g/cm3之間,對堆積密度高於1·5 g/cm3或低於〇.5 g/cm3 的鋁粉與氮化鋁粉並不適用,此一情形亦限制了原料的選 擇範圍。 ⑴中華民國公告第466212號發明專利及美國第 201127747 US6,482,384B1號專利中,係一種氮化鋁粉體之合成方法 。其係將鋁粉置於一具開口之耐高溫容器中,若鋁粉的堆積 密度小於〇.8g/cm3時,便將此财高溫容器置於充滿氤氣的 密閉室中,若鋁粉的堆積密度大於〇.8g/cm3時,先在鋁粉 中以直立方式置放多孔鋁管,或於鋁粉頂面置放起始劑, 或同時於鋁粉中置放多孔鋁管並於鋁粉頂面置放起始劑, 再將此耐高溫容器置於充滿氮氣的密閉室中。之後,在該 耐高溫容器之底端輸入氮氣,並於該耐高溫容器之頂端加 熱引燃該起始劑,使銘粉與氮氣發生燃燒合成反應而生成 氮化鋁粉體。 然而,該中華民國第466212號發明專利及美國第 US6,482,384B1號專利中,當鋁粉堆積密度較大時 (sO.Sg/cm·5),操作則較為複雜,且兩者惰形下之轉化率最 高僅為99%,仍有進步改進的空間。 ⑴中華民國公告第1230685號發明專利,係關於一種 氮化鋁的合成方法與裝置,乃利用一耐高壓反應器,將鋁 粉與各種可以合成氮化紹的化合物,如稀釋劑、添加劑及 鋁箔團等化合物混合以共同組成反應物,置入一具有兩端 開口之鋁製容器内再將此容器置於耐高壓反應器内,從容 器底部通入氮氣並於耐高壓反應器内填充氮氣,以進行燃 燒合成反應。如此,可反應獲得高純度之氮化铭產物,且 該1230685號專利案將各種用以合成氮化鋁的各式反應物 ,在不同壓力、不同組成、不同堆積密度與各種控制條件 下進行燃燒合成反應,以獲得高純度的I化銘產物,以適 用於各種堆疊密度之反應物,可避免該中華民國第466212 —10 — 201127747 號發明專利操作複雜之缺點。 '、、、而衫123(3685號專利中,由於該法須於原料銘 ,中=稀釋劑、添加劑或耗團等化合物方可反應獲得 f產物,使得該稀釋劑、添加劑或㈣團之添加可能 V致氮化1呂產物污染的問題,且其轉化率最高為99%,技 術亦仍有改進的空間。(b) After the patent application of Japanese Patent Application Laid-Open No. SHO-64-76906, the liquid used in the patent application of the Japanese Patent Application No. 64-76906, the temperature of the sad nitrogen is very low, It will also increase the cost and operational complexity and risk of equipment and operation. (C) In the Japanese Patent Application Laid-Open No. 64-76905, the application of IS to nitrogen-containing m compounds [such as azide (10) (6), potassium hydride (KNS) or 4 nitriding) The powder is mixed in an appropriate proportion and placed in a fire container. 'The mixed powder is provided with a igniting agent, and the mixed powder and the igniting agent are placed in an electric heating furnace under pressure. The reaction was carried out under a nitrogen atmosphere of less than 1 〇 φ kg / C 〇r. Before the start of the reaction, the electric heating furnace is turned on to heat the reactants, and then the electric heating wire is used to heat the ignition agent, and then the combustion synthesis reaction of the synthetic nitriding is ignited to synthesize the nitrogen powder. (d) Patent No. 247897 of the Republic of China, and US 5,460,794 #. In the patent, the two cases use | Lu powder and solid nitrogen compounds as 'raw materials, the mixed powder of the two is molded and then completely coated with the ignition agent - placed in a closed container filled with nitrogen, heated and ignited The igniting agent generates a combustion synthesis reaction to form an aluminum nitride powder. (e) in the Republic of China Announcement No. 226987 and U.S. Patent No. 5,453,407, in which the use of Lu powder and solid gas-containing compounds as raw materials 201127747, and the addition of ii chemical salts, and then the three After the mixed powder is molded, it is completely covered with a igniting agent, placed in a closed container filled with nitrogen, and heated and ignited. The smoldering sword, the synthetic reaction is then ignited to synthesize the nitriding powder. The above-mentioned Japanese Patent Application Laid-Open No. 64-76905, the Republic of China No. 247897, and the Republic of China No. 226987 patent can reduce the & patents of the Japanese Patent Publication Nos. 63-274605 and 64-769-6 In addition, in order to make the reaction proceed in a self-propagating combustion mode, the solid I-containing compound must be a compound which is easily decomposed by thermal decomposition, so that the nitrogen gas generated by the thermal decomposition of the solid nitrogen-containing compound can be Reacts with aluminum powder. However, the nitrogen gas generated by the thermal decomposition of the solid nitrogen-containing compound may cause a problem that the reaction may not be caused by the pressure or the escape of nitrogen. (f) in the Patent Application No. 86103021 of the Republic of China, and in U.S. Patent No. 5,846,5〇8', the use of powdered and ammoniumized ammonium salts as raw materials, mixed powder molding, or placed in The open or porous high temperature resistant container is placed in a closed container filled with nitrogen, and the reaction is heated to generate 'aluminum nitride powder. (g) In the case of the patent application of the Republic of China on No. 86117545, the use of a compound that is decomposed or vaporized under the bribe and fUx is used as a raw material, mixed in an appropriate ratio and placed in an opening or The porous high-temperature resistant container is 'in a suitable shape and then in a sealed state filled with nitrogen gas. After heating and igniting the reaction, the nitriding powder is synthesized. A brief description of the patents of the Republic of China No. 86103021 and No. 86117545, which can be obtained by adding a toothed ammonium salt or a halogen-containing compound which can be decomposed below the melting point of the alloy, can obtain a high yield under low nitrogen pressure, although 201127747 avoids the above-mentioned Japanese Patent Publication No. 64-76905, the Republic of China No. 247897 patent and the Republic of China No. 226987 patent for the high pressure caused by the addition of α solid nitrogen compounds, but generates gas during the reaction. By-products such as hydrogen (HC1), ammonia (ΝΗ3), ammonium sulfate (NH4C1), chlorine (Cu) or carbon (C) increase the complexity and operating costs of subsequent treatments. (h) US Bulletin No. 5649278 In the patent, the powder is used as the reactant 'and 20% to 80 wt% (based on the total weight of the aluminum powder and the aluminum nitride powder) is used as a diluent, and the two are mixed. The powder mixture is placed in a high temperature resistant container such as graphite crucible or oxide ceramic, and the density of the powder mixture is between 0.5 and 1.5 g/cm3, and then placed in a reactor filled with nitrogen at 0.75. ~30 atmosphere (atm) of nitrogen Under force, heating-ignition combustion synthesis reaction to generate aluminum nitride powder. However, in the U.S. Patent No. 5,649,278, it is possible to prevent the melting of the powder, maintain the circulation of the nitrogen, and obtain a higher conversion rate, and avoid the need for further by-products such as the patent applications of the Republic of China No. 86103021 and No. 86117545. The disadvantages of removal, but the process of mixing the aluminum powder and aluminum nitride first, and the content of the diluent must be as high as 30 wt% or more to obtain a higher conversion rate, which also increases the complexity of the process. With the operating cost, and reducing the amount of feed per unit weight of the amount of nitrogen can be synthesized. In addition, the powder mixture must have a density between 〇.5g/cm3 and g/cm3, and aluminum powder and aluminum nitride having a bulk density higher than 1.25 g/cm3 or less than 〇5 g/cm3. Powder is not suitable, and this situation also limits the choice of raw materials. (1) The invention patent of the Republic of China Announcement No. 466212 and the US Patent No. 201127747 US Pat. No. 6,482,384 B1 are a method for synthesizing aluminum nitride powder. The aluminum powder is placed in an open high temperature resistant container. If the bulk density of the aluminum powder is less than 〇8g/cm3, the high temperature container is placed in a sealed chamber filled with helium, if the aluminum powder When the bulk density is greater than 〇8g/cm3, the porous aluminum tube is placed in an upright manner in the aluminum powder, or the initiator is placed on the top surface of the aluminum powder, or the porous aluminum tube is placed in the aluminum powder at the same time and in the aluminum The initiator was placed on the top of the powder, and the high temperature resistant container was placed in a sealed chamber filled with nitrogen. Thereafter, nitrogen gas is introduced into the bottom end of the high temperature resistant container, and the initiator is heated and ignited at the top end of the high temperature resistant container to cause the combustion reaction of the powder with nitrogen to form an aluminum nitride powder. However, in the invention patent of the Republic of China No. 466212 and the US Patent No. 6,482,384B1, when the aluminum powder has a high bulk density (sO.Sg/cm·5), the operation is complicated, and both are under the form of inertia. The conversion rate is only 99%, and there is still room for improvement. (1) The invention patent of the Republic of China Announcement No. 1230685 relates to a method and a device for synthesizing aluminum nitride, which utilizes a high pressure resistant reactor to mix aluminum powder with various compounds which can be synthesized, such as diluents, additives and aluminum foil. The compound such as a group is mixed to form a reactant, placed in an aluminum container having open ends, and then placed in a high pressure resistant reactor, nitrogen gas is introduced from the bottom of the vessel, and nitrogen gas is filled in the high pressure resistant reactor. To carry out a combustion synthesis reaction. In this way, a high-purity nitriding product can be obtained by reaction, and the various reagents for synthesizing aluminum nitride are burned under different pressures, different compositions, different bulk densities and various control conditions in the patent No. 1230685. The synthesis reaction is carried out to obtain a high-purity I product, which is suitable for various stacking density reactants, and can avoid the disadvantages of the complicated operation of the invention patent of the Republic of China No. 466212-10-201127747. ',,, and shirt 123 (3685 patent, because the law must be in the raw materials, medium = diluent, additives or consumables can be reacted to obtain the f product, so that the diluent, additive or (four) group added It may be a problem of V-nitriding 1 Lu product contamination, and its conversion rate is up to 99%, and there is still room for improvement in technology.

…(k)中爭民國g 1246997號發明專利,係先將原料紹 如、工由水煮或疋置放於南溫高濕度的環境下,以對該紹粉 表面進行改貝,使|g粉表面形成—層氧化物或氫氧化物之 陶究層’以使反應物在燃燒合成反應過程中不會產生融聚 現而&維持多孔狀’再通人氮氣以產生氮化反應而生 成氮化!S產物。如此,可避免該巾華民國公告帛i23〇685 说專利因添加_劑、添加劑及料團而造魏化铭產物 污染的問題。 兩然而,該第1246997號專利由於在燃燒合成反應之前 而先對該鋁粉表面進行冗長且複雜的改質處理,將造成耗 時耗能之缺點。 (1)中華民國第1315296號發明專利,係一種經由鋁粉 表面改吳製備氮化鋁的方法,其係先進行一盛裝步驟,將 ^鋁粉體置入一盛裝容器中;接著進行一氮氣通入步驟, 將該裴有含鋁粉體之盛裝容器置放於氮氣環境中;再進行 加熱步驟,對該盛裝容器中之含鋁粉體進行加熱直至該 含鋁粉體產生燃燒合成反應,並於燃燒合成反應開始後通 入含氧氣體,透過該含氧氣體於該含鋁粉體之表面產生氧 化物或氫氧化物層之陶瓷層,以防止含鋁粉體因高温產生 201127747 炫融現象;最後再進行—氮氣回充㈣ 體,並通入氮氣,使氣氣流經該含紹粉體,以使 體進行職合纽應㈣賴化銘。如此 服 專利需於燃燒合成反應進行前先對該觸: 進仃改寊處理而造成製程冗長之缺點。 然而,該第1315296練轰4丨丨<+7 心 6 ▲專利中,於發生燃燒合成反應 開始仗必須先通入該含氧氣體,以於 反應形成賴層後’再通入氮氣以形成氣化銘,方^ =同轉化率之效果’因而造成製程程序較為複 之缺點。 此外’由於該些含紹粉體之堆叠密度並不均勾所通 入的含乳氣體經常無法均勻流經該些含紹粉體之表面,且 粉體之各處溫度不盡相同,造成該些含㈣體表 面^應較不均勻’因此造成該第131通號專利容易有紹 私表面所形成之陶£層不均句之問題,使得其避免該些含 / — p" 士 I ’ 不佳,僅可於少量含鋁粉體進 仃反應時方可達高轉化率,且高轉化率之再現性不佳。 之製述原因,其有必要進—步改良上述f用氮㈣ 【發明内容】 本毛月目的乃改良上述缺點,以提供一種氮化鋁之製 備方法’以均勻地於峰表面反應形成耐高溫之陶究層為 目白勺。 、 才報月人目的係提供一種氮化I呂之製備方法,以提 12 -- 201127747 升避免鋁粉產生融聚現象之效果。 根據本發明的氮化鋁之製備方法,係包含··一反應物 調配步驟將鋁粉及一表面改質劑均勻混合形成一反應物, 並將該反應物置放於一容器中;及一加熱燃燒步驟使該容 器中的反應物暴露於一含氮氣體中,並加熱至660°c以上 的溫度使該反應物燃燒’於加熱過程中,該表面改質劑與 該鋁粉產生表面改質反應’以於該鋁粉之表面形成一陶瓷...(k) Invented the patent of the Republic of China g 1246997, the first is to put the raw materials, such as boiled or placed in the environment of high temperature and humidity, to modify the surface of the powder, so that | The surface of the powder forms a layer of oxide or hydroxide, so that the reactant does not melt during the combustion synthesis reaction, and the pores are maintained and the nitrogen is generated to generate a nitridation reaction. Nitriding! S product. In this way, it can be avoided that the Republic of China Announcement 帛i23〇685 said that the patent caused the contamination of Wei Huaming products due to the addition of _agents, additives and masses. However, this Patent No. 1,246,997 suffers from a lengthy and complicated modification of the surface of the aluminum powder prior to the combustion synthesis reaction, which causes a disadvantage of time consuming and energy consuming. (1) The invention patent of No. 1315296 of the Republic of China is a method for preparing aluminum nitride by modifying the surface of aluminum powder, which is first carried out in a holding step, and the aluminum powder is placed in a container; then a nitrogen gas is introduced. In the step of introducing, the container containing the aluminum-containing powder is placed in a nitrogen atmosphere; and then heating is performed to heat the aluminum-containing powder in the container until the aluminum-containing powder generates a combustion synthesis reaction. And after the start of the combustion synthesis reaction, an oxygen-containing gas is introduced, and the ceramic layer of the oxide or hydroxide layer is generated on the surface of the aluminum-containing powder through the oxygen-containing gas to prevent the aluminum-containing powder from being generated due to high temperature. Phenomenon; finally carry out - nitrogen backfill (four) body, and through the nitrogen, so that the gas flow through the containing powder, so that the body to work in the New Zealand (4) Lai Huaming. In this way, the patent needs to be dealt with before the combustion synthesis reaction: the defect of the process is caused by the tampering process. However, in the 1315296 tempering 4 丨丨 <+7 heart 6 ▲ patent, the oxygen-containing gas must be introduced into the combustion synthesis reaction at the beginning of the reaction to form a layer of lysate and then pass nitrogen gas to form Gasification Ming, square ^ = the effect of the same conversion rate' thus caused the process program to be more complex. In addition, because the milk containing gas which is not uniformly distributed in the stacking density of the powders is not able to uniformly flow through the surface of the powder containing the powder, and the temperature of the powder is not the same, resulting in Some of the (IV) body surfaces should be less uniform, thus causing the problem that the 131st patent is easy to have the uneven layer formed by the surface of the private surface, so that it avoids the inclusion of /p" Preferably, high conversion can be achieved only when a small amount of aluminum-containing powder is reacted, and the high conversion rate is not reproducible. For the reason of the description, it is necessary to further improve the above-mentioned nitrogen for f (IV) [Summary of the Invention] The purpose of the present invention is to improve the above disadvantages to provide a method for preparing aluminum nitride to form a high temperature resistance by uniformly reacting on the peak surface. The ceramic layer is the eye for it. The purpose of the monthly report is to provide a method for preparing nitrided I, to raise the effect of melting the aluminum powder by 12 -- 201127747 liters. The method for preparing aluminum nitride according to the present invention comprises the steps of: uniformly mixing aluminum powder and a surface modifying agent to form a reactant, and placing the reactant in a container; and heating The burning step exposes the reactants in the vessel to a nitrogen-containing gas and heats to a temperature above 660 ° C to burn the reactants during heating. The surface modifier and the aluminum powder surface-modify Reaction 'to form a ceramic on the surface of the aluminum powder

層’且該叙粉因燃燒而與該含氮氣體進行燃燒合成反應而 形成氮化鋁。 【實施方式】 為讓本發明之上述及其他目的、特徵及優點能更明顯 易懂,下文特舉本發明之較佳實施例,並配合所附圖式, 作詳細說明如下: 本發明所提供之氮化鋁之製備方法,係包含一反應物 調配步驟si以調配出一反應物,及一加熱燃燒步驟幻使 該反應物暴露於-含线料,使該含氮氣體與該反應物 充分接觸’朗該反應物進行加熱,料生職合成反應 形成氮化减物。本發明之反應物調配步驟si及加熱燃燒 少驟S 2分別詳述如下: 反應物調配步驟S1 : δ月多 /、、、 之虱化鋁之製備方法的反 應物凋配步称S1係將鋁粉及一 .^ , -if ^ 表面改質劑均勻混合形成 該反亿物絲献錢置心—容 銘粉係可選擇為各種形狀之含 °°更心之’ ο 銘私月豆,例如片狀、球狀或 201127747 蛘屑’狀之紹粉’且其含紹量較佳係高於5_%,且平均粒 徑係選擇為〇.01〜200/rm ’以作為反應原料。該表面改質 劑係指能於後續之加熱燃燒步驟S2中可直接與該銘粉反 應生成陶莞層之化合物,或在㈣點66(rc以下之溫度產 生分解或氣化生成活性物_如H2Q或。2],而‘“ 鋁粉反應生成陶曼層的化合物。該表面改質劑可 (H20)、氫氧化紹(A1_)3)、峭酸|g (A_4)、氨氧 化鎂(Mg(〇H)2 )、氫氧倾(Ca(〇H)2)及氫氡化鋇(Ba(叫 )所組成之群組。其巾,該表面改㈣以錢百分比計俘 佔該反應物總重之(U〜·,且較佳係倾反應物總重之 卜’若該表面改質劑於該反應物t之含量低於〇 , 則該表面改質劑之含量過少,而無法均勾的於該紹粉表面 形成該陶宽層;若該表面改質劑於該反應物中之含量高於 二0% ’則可能因過高之表面改質劑含量而造成該陶究層之 厚度過厚而阻礙該I呂粉與該含氮氣體之反應,而使反 完全。 … ,曰該反應物調配步驟S1係將該鋁粉與該表面改質劑均 勻混合後作為該反應物,以使該紹粉之顆粒之間分佈有該 表面改質劑,再將該反應物置放於該容器中,本發明所使 用=設備主要係與如中華民國公告第1246997所述相同, 。亥可選擇為以石墨' 氮化紹(A1N)、氮化碎(SW) 二氧化!呂(Al2〇3)、氧化錯(Zr〇2)或碳化鶴(wc)等材 貝製成,本實施例係選擇以石墨坩鍋作為該容器,且該容 5上較佳係設有數個穿孔,且該穿孔之#向—積之總和 較佳係佔該容器總表面積之卜5 0 % (以τ'簡稱為容器穿孔 一-Η 201127747 率)’以提升該含聽體與該反應物之接觸,進而提升整體 反應轉化率。 加熱燃燒步驟S2 : 口月茶照第1圖所不,本發明之氮化紹之製備方法的加 ,燃燒步驟S2係使該容㈣之反應物暴露於該含氮氣體 ’並對該反應物加熱至6帆以上的溫度使該反應物燃 於加熱過程中,該表面改質劑直接或間接與該铭粉產 改質反應’以於該雜之表面形成m層,且該 f粉因燃燒而與該含氮氣體進行峨合纽應而形成氮化 之’該含氮氣體係可選擇由氮氣、氨氣及空氣 所、、且成之群組’用以提供生錢 明係選擇將該盛裝有反庫物之容原子本15 器中,抽直空後_^=放於—真空耐壓反應 ,今人^卿 4含魏體迫人該真空_反應器内 容==較佳係為。.1〜30大氣壓(叫使該 分暴露於該錢氣體中,再透過以軌 射寻方式對該反應物進行加熱,㈣ 或紅外線等方式對該反應物進行= 燃=至4相㈣α點⑽。C)以上,使該轉產生 於反由輸粉]與該表面改質劑2 …引,:勻,'口,而暴露於該含氮氣體3中,因此, 、,ft:::不’灰加熱過程中’該表面改質劑2便可如前 二二】1之广、式與_ 1產生反應,而均勻地於 =/形成㈣高溫之陶1層4(例如氧化物、 垔羊 1化物錢氧化物),因此可提升該紹粉]表面 15 201127747 之陶瓷層4的均勻度。 舉例而言,若該表面改質劑選擇為水,則於加熱過程 中,該水便可直接與該鋁粉進行如式a之反應而形成氫氧 化鋁之陶瓷層,或間接與該鋁粉進行如式b所示之反應而 形成氧化鋁之陶瓷層。 2[A1]-A1+6H20—2[Λ1]-Α1(0Η)3+3Η2..........(a) 2[A1]-A1(0H)3-^[A1]- Al2〇3+3H20............(b) 若該表面改質劑選擇為氫氧化鋁、氫氧化鎂、氫氧化 鈣或氫氧化鋇,則於加熱過程中,該氫氧化鋁、氫氧化鎂 、氫氧化妈或氫氧化鋇便會分別如式c、式d、式e或式f 所示,因熱分解而產生水及氧化物,而所產生之水便可作 為活性物質,與該鋁粉進行如式a.所示之反應而形成氫氧 化物材質之陶竞層;或者進一步間接與該铭粉進行如式b 所示之反應而形成氧化鋁之陶瓷層。因此,以該氫氧化鋁 、氫氧化鎂、氫氧化鈣或氫氧化鋇作為表面改質劑可間接 與該鋁粉反應生成該陶瓷層。其中,該表面改質劑較佳係 選擇為氫氧化鋁。 2A1(0H)3 ^ Al2〇3 + 3H20.....................(c)The layer 'and the powder is combusted and reacted with the nitrogen-containing gas to form aluminum nitride. The above and other objects, features and advantages of the present invention will become more <RTIgt; The method for preparing aluminum nitride comprises a reactant preparation step si to prepare a reactant, and a heating combustion step to illuminate the reactant to be exposed to the -containing material, so that the nitrogen-containing gas and the reactant are sufficiently Contacting 'Lang's the reactants for heating, the raw synthesis reaction is formed to form a nitride reduction. The reactant preparation step si and the heating and combustion less step S 2 of the present invention are respectively described in detail as follows: The reactant preparation step S1: the reactants of the preparation method of the aluminum oxide of δ ○ 、, 、, 、, 、 Aluminum powder and a ^., -if ^ surface modifiers are evenly mixed to form the anti-100 million silk to pay for the heart - Rong Ming powder can be selected for a variety of shapes ° ° more heart of ' ο 私私月 beans, For example, a sheet-like, spherical or 201127747 swarf-like powder is preferred and its content is preferably higher than 5%, and the average particle size is selected to be 〇.01~200/rm' as a reaction raw material. The surface modifying agent refers to a compound which can directly react with the Ming powder to form a pottery layer in the subsequent heating combustion step S2, or to generate an active substance at a temperature below (c) 66 (the temperature below rc is decomposed or gasified). H2Q or .2], and ''aluminum powder reacts to form a compound of the Tauman layer. The surface modifier can be (H20), sulphuric acid (A1_)3), succinic acid|g (A_4), magnesium oxychloride ( Mg(〇H)2), hydrogen-oxygen (Ca(〇H)2), and hydroquinone (Ba (called) group. The towel, the surface is changed (4) to capture the reaction in percentage of money The total weight of the material (U~·, and preferably the total weight of the reactants) If the content of the surface modifier in the reactant t is lower than 〇, the content of the surface modifier is too small to be The ceramic layer is formed on the surface of the powder; if the surface modifier is higher than 20% in the reactant, the ceramic layer may be caused by an excessively high surface modifier content. The thickness is too thick to hinder the reaction between the Ilu powder and the nitrogen-containing gas, and the reaction is completely reversed. The reaction preparation step S1 is to uniformly homogenize the aluminum powder and the surface modifier. After being combined as the reactant, the surface modifier is distributed between the particles of the powder, and the reactant is placed in the container. The device used in the present invention is mainly related to the Republic of China Announcement No. 1246997. The same, the hai can be selected from graphite 'nitriding slag (A1N), nitriding (SW) oxidized! Lu (Al2 〇 3), oxidized (Zr 〇 2) or carbonized crane (wc) In the present embodiment, a graphite crucible is selected as the container, and the plurality of perforations are preferably provided on the volume 5, and the sum of the inward-products of the perforations preferably accounts for the total surface area of the container. 50% (referred to as τ's container perforation - Η 201127747 rate) 'to enhance the contact between the listener and the reactants, thereby improving the overall reaction conversion rate. Heating and burning step S2: mouth month tea photo 1 No, the method of preparing the nitrile of the present invention, the burning step S2 is such that the reactant of the volume (4) is exposed to the nitrogen-containing gas and the reactant is heated to a temperature above 6 sails to ignite the reactant. During the heating process, the surface modifier directly or indirectly reacts with the Ming powder production. Forming an m layer on the surface of the impurity, and the f powder is nitrided by the nitrogen gas containing by combustion, and the nitrogen-containing system can be selected from nitrogen, ammonia and air. The group 'is used to provide the money to choose the source of the atomic material contained in the anti-reservoir. After the pumping straight, the _^= is placed in the vacuum withstand voltage reaction, and now the person ^ Qing 4 contains the Wei body Forced person vacuum_reactor content == preferably is 1. 1~30 atmosphere (called to expose the point to the money gas, and then through the orbital search method to heat the reaction, (four) or infrared The method is carried out = burning = to 4 phase (four) α point (10). C) or more, so that the rotation is caused by the powder transfer] and the surface modifier 2,: uniform, 'mouth, and exposed to the In the nitrogen-containing gas 3, therefore, ft::: not in the 'ash heating process', the surface modifier 2 can be as wide as the first two two, the formula and _ 1 react, and evenly = / Forming (4) High temperature pottery 1 layer 4 (for example, oxide, 垔 1 1 钱 钱 氧化物 ,), thus improving the uniformity of the ceramic layer 4 of the surface 15 201127747. For example, if the surface modifier is selected to be water, the water may directly react with the aluminum powder to form a ceramic layer of aluminum hydroxide or indirectly with the aluminum powder during heating. A reaction as shown in formula b is carried out to form a ceramic layer of alumina. 2[A1]-A1+6H20—2[Λ1]-Α1(0Η)3+3Η2..........(a) 2[A1]-A1(0H)3-^[A1]- Al2〇3+3H20......(b) If the surface modifier is selected from aluminum hydroxide, magnesium hydroxide, calcium hydroxide or barium hydroxide, during the heating process, The aluminum hydroxide, magnesium hydroxide, hydroxide or barium hydroxide will be respectively represented by formula c, formula d, formula e or formula f, and water and oxide are generated by thermal decomposition, and the water produced is As an active material, the aluminum powder is reacted with the aluminum powder to form a pottery layer of a hydroxide material; or further indirectly reacted with the powder to form a ceramic of alumina as shown in formula b Floor. Therefore, the aluminum oxide, magnesium hydroxide, calcium hydroxide or barium hydroxide can be used as a surface modifier to indirectly react with the aluminum powder to form the ceramic layer. Among them, the surface modifier is preferably selected from aluminum hydroxide. 2A1(0H)3 ^ Al2〇3 + 3H20.....................(c)

Mg(OH)2 ^ MgO + I-I20........................(d)Mg(OH)2 ^ MgO + I-I20........................(d)

Ca(OH)2 CaO + H2〇..........................(e)Ca(OH)2 CaO + H2〇..............................(e)

Ba(〇H)2 — BaO + H20..........................(f) 若該表面改質劑選擇為硝酸鋁,則於加熱過程中,該 硝酸鋁便會如式g所示,因熱分解產生〇2,而所產生之 〇2便可作為活性物質,與該铭粉進行如式h所示之反應而 形成氧化銘材質之陶竞層。因此,以該硝酸銘作為表面改 —]6—— 201127747 質劑可間接與該鋁粉反應生成該陶瓷層。 2Α1(Ν〇3)3 &quot;&quot;&quot;^ A】2〇3 + 6N〇2+3/2 〇2......................(§) 2[Α1]-Α]+3/2 02 -&gt; [Al]-Al2N〇3......................(h) 請再參照第4圖所示,形成該陶瓷層4後,隨著溫度 持續上升達660°C,即使該鋁粉1内部因高溫而炫融形成 熔融態的鋁Γ,該耐高溫之陶瓷層4仍可使炫融態的鋁Γ 之間保有空隙供含氮氣體3充分的流經,因此可避免產生 融聚現象。Ba(〇H)2 — BaO + H20.........................(f) If the surface modifier is selected as aluminum nitrate, Then, during the heating process, the aluminum nitrate will be as shown in the formula g, and the ruthenium 2 is generated by thermal decomposition, and the ruthenium 2 produced can be used as an active material to form a reaction with the powder as shown in the formula h. Oxidation of the material of the pottery layer. Therefore, using the nitric acid as a surface modification -] 6 - 201127747 plasmon can indirectly react with the aluminum powder to form the ceramic layer. 2Α1(Ν〇3)3 &quot;&quot;&quot;^ A]2〇3 + 6N〇2+3/2 〇2..................... (§) 2[Α1]-Α]+3/2 02 -&gt; [Al]-Al2N〇3......................(h Referring to FIG. 4 again, after the ceramic layer 4 is formed, as the temperature continues to rise to 660 ° C, even if the aluminum powder 1 is fused to form a molten aluminum crucible due to high temperature, the high temperature resistant ceramic The layer 4 still allows a gap between the dazzling aluminum crucibles to allow sufficient flow of the nitrogen-containing gas 3, thereby avoiding the occurrence of melting.

請再參照第5圖所示,待溫度持續提升至660°C以上 ’該陶兗層4因内部熔融態鋁之熱膨脹而破裂,該熔融態 的銘Γ將會溢出’此時,由於該含氮氣體3可充分的流經 該些空隙’且溫度已達燃燒合成反應之高溫,因此該含氮 氣體3可快速與該熔融態的鋁〗,進行燃燒合成反應形成氮 化铭:)之產物,而該陶瓷層4亦將完全與氮氣產生氮化反 應而形成該氮化鋁5之產物,如第6圖所示,進而提升整 體轉化率。 因此 本發明透過該表面改質劑之添加,並與該鋁粉 方、反應Θ便均勻混合’使得於加熱過程中,該表面改質劑 將直,或間接與該㈣反應,而均勻地於趣粉表面形成 該=溫之卩”層,可避免習職化|g製備方法需先通入 含氧氣體進行表㈣f該後,再進行氮化反應而造成穿』 亦可避免因含氧氣體無法均勾流過紹粉而 ^ \ e刀佈不均勻之缺點。而本發明所形成之陶竞層 f程中亦將因氮氣的充分提供錢化形魏化紹, 因此所4之氮⑽成品的氧含量並不會因絲面改質劑 -17 — 201127747Please refer to Figure 5 again, until the temperature continues to rise above 660 ° C. 'The pottery layer 4 is broken due to the thermal expansion of the internal molten aluminum, and the molten state will overflow.' At this time, due to the inclusion The nitrogen gas 3 can flow sufficiently through the gaps 'and the temperature has reached the high temperature of the combustion synthesis reaction, so the nitrogen-containing gas 3 can be rapidly reacted with the molten aluminum to form a product of nitriding:) The ceramic layer 4 will also be completely nitrided with nitrogen to form the product of the aluminum nitride 5, as shown in Fig. 6, thereby increasing the overall conversion. Therefore, the present invention is uniformly mixed with the aluminum powder and the reaction sputum by the addition of the surface modifier, so that the surface modifier will react directly or indirectly with the (4) during heating, and uniformly The surface of the fun powder forms the layer of the temperature layer, which can avoid the occupationalization|g preparation method. First, the oxygen-containing gas is introduced into the table (4), and then the nitriding reaction is carried out to cause the wear. It is impossible to quit the flow of Shao powder and the unevenness of the ^ \ e knife cloth. However, the pottery layer formed by the invention will also be provided by the full amount of nitrogen to form Wei Huashao, so the nitrogen (10) finished product Oxygen content is not due to the surface modifier -17 — 201127747

之添加而增加D &quot;至此’便完成本發明之氮化狀製備方法,因而可提 升氬化鋁之轉化率。 此外,該反應物調配步.驟si可選擇性的另進行下列 處理’尤其在該反應物於該容器㈣整體 物總重/反應物堆疊後所佔的體積)高於峰該;; 不易通過該反應物,為避免轉化率之降低,較佳係 另採用下列處理之至少一種: :稀釋劑與該崎及表面改質劑進行混合作 广反應物,該稀釋劑係為高熔點且不參 ::可選自由氮卿丨N)售卿4)、氮化 太⑶N)、氮化石朋(BN)、碳化石夕(%)、氧化紹㈤办 ^化錯(构'二氧化欽⑽)及二氧切⑽ 所=成之群組,以_触粉,增加軸粉之間的空隙 I幫助吸熱,避纽應溫度過高。該騎劑以重量百分 比計係佔該反應物總重之_〜8啊,較佳係為卜戰。 其⑺另於該反應财置放至少-個無孔或多孔狀之結 可選擇將該反應物容置於該容器後,將該铭管 反應針,可增加該_之_空隙以便該含 =姐之流通。該崎内徑選擇為卜^,該 ::3一_,管壁之穿孔的直徑選擇為 =辟?^,若選擇為多孔狀銘管,則穿孔的總面積佔 ^ =設穿孔時之管壁面積的]〜·,以提升該含氮氣 (3)另於該反應物上鋪設 起始劑,該起始劑係指可在 18 — 201127747 在呂文容―' 趟 ‘乂下刀解或氣化之化合物,例如可選自由_化錢 二合^如氯化銨^含^^ (广1〜4)之化合物、含鹵素之 細紹粉及链箔球所組成的群組,以 幫助該反應物 中之鉈粉產生燃燒。 # 先於該容器上舖設一層耐高溫之隔離化合物後,再 將该反應、W ^ 、 置放方;έ玄谷器内’使該隔離化合物位於該容器 及反應私];^ ^ 人、 間,以幫助吸熱,進而提升轉化率。該隔離化 入物可璉擇為氮化物、氧化物、碳化物或其他耐高溫化 中,。例如本發明係選擇以氮化鋁作為該隔離化合物。其 ,以^隔離化合物與該反應物之間較佳係另設置一阻絕層 黏g Y免减反應物經燃燒合成反應所形成之氮化链產物沾 二忒隔離化合物而影響該氮化鋁產物之純度。該阻 仏可,擇為無孔或多孔㈣。 此外,該加熱燃燒步驟S2中係可另選擇性的 列處理,^•、甘+ β ± 」、&lt;丁广 〇 1%^ 、在该表面改質劑之含量低於該反應物總重的 鋁於0 U下時,該表面改質劑的量較少,可能無法使大部分 蜱後,表面形成該陶瓷層,因此較佳係於該反應物開始燃 反應哭將一含氧氣體,例如氧氣或空氣,通入該真空耐壓 二。°,使該含氧氣體流經前述該鋁粉之間的空隙並與該 接觸’使得該含氧氣體可與該⑽進行氧化反應 升陶瓷^鉋粉表面形成氧化物材質之陶瓷層’以進一步提 體回充度;再將該含氧氣體關閉,並將該含氣氣 重新暴真空耐壓反應器,使該包覆有陶隻層之紹粉 究層因古、/含氮氣體中’如前述之反應機制所述,該陶 曰阿還破裂後,使内部的鋁粉可充分與該含氣氣體反 —19 — 201127747 應而形成氮化鋁產物。因此,可透過通入該含氧氣體使該 . 在呂粉表面更均勻的形成該陶曼層。 如前所述,透過前述反應物調配步驟s]及加熱燃燒 步驟S2便可完成氮化鋁粉體之製作。而反應完成所獲得之 氮化鋁產物亦可進一步研磨成粉狀顆粒,以作為進—步之 應用。 以下另揭示本發明之氮化鋁之製備方法於各種不同 條件下的實施例,以驗證本發明確實可大幅提昇氮化鋁之 製作效率及轉化率,並簡化製程。 請參照表一所示,其係為本發明第】至第7實施例之春 反應條件。以第1實施例為例,其係先將100g的片狀鋁粉 及Iwt%之氫氧化鋁(表面改質劑)混合作為該反應物,於 直徑8cm,高9cm,穿孔率為15〇/0之石墨坩鍋(容器)中 鋪放一層粒徑為〇·〗〜3mm之氮化鋁粉(耐高溫之隔離化合 物)’再將無孔之圓筒狀鋁箔(阻絕層)置入該石墨坩禍中 ,並將該反應物置入圓筒狀鋁箔中,最後在該圓筒狀鋁箔 與§亥石墨坩禍間均勻填充該氮化鋁粉體。將該盛裝有反應鲁 物之石墨坩鍋置於該真空耐壓反應器中,先抽真空至〇.】 陶爾(ton·)再同時由該石墨坩堝底部及側面通入3大氣壓 的氛氣(含氮氣體),以鎢絲線圈(電熱線)通電(、電壓: 3〇伏特’電流:28安培)進行加熱,進行加熱約30秒燃燒 合成反應即被引燃,隨即關閉鎢絲線圈電源並由該石墨坩 禍底部通入空氣(含氧氣體)1分鐘,空氣流量為20 liter/min — ’隨後持續通入氮氣以維持該真空耐壓反應器内壓力為3 大氣壓(回充氮氣壓力),經約60秒反應即完成,而獲得 20 - 201127747 氮化鋁產物。待氮化鋁產物〆、 ^ 〜部後取出,為淡黃色疏鬆粉 肢’此氮伽產物經解研磨後,以X光繞射儀(XRD) 鏗定,結杲如第7圖所示,_中箭頭標示處為氮化銘之繞 射峰,顯示為氮化鋁粉體無嘍 、,α w &quot; a, “、、味’亚且將數克氮化鋁粉體放 入15wt%鹽酸(HC1)溶液由 w x 之中’&gt;谷解殘餘之鋁,同時以排 水集氣法收集氫氣,利用所妆隹糾认^丄斤μ&quot;方从达 1叹集到的虱氣計算轉化率約為 99.96%,再以氮氧分析儀八Λ ^ m分析產物得知氧含量約為 〇.15wt%。 第2至第7實施例與第1每 ^1灵軛例之製程條件至異處列 於表二’其巾’第7貫施例係麵以微波方式加熱,加熱 後與第1貫施例相同通人空氣,各實施例其餘製程條件與 第1實施例相同。 由表一結果可得知,不論以電熱線加熱或以微波加熱 ’該第1至第7實施例之轉化率皆可達到99.95%以上,再 現性相當高,含氧量亦僅有0.15%,且整體反應僅需數分 鐘便可完成,可大幅提升製程效率及轉化率。 表一、第1至第7實施例之反應條件差異 實施例 金呂粉 改質劑 (wt%) 容器穿孔 率(%) 氮氣壓力 (atm) 加熱方式 回充氮 氣壓力 (atm) 轉化率 (wt%) 含氧量 (wt%) ] 100g 片狀 1%氫氧 化鋁 15 一&gt; 30V: 28A 電熱線加熱 3 99.96 0.15 2 100g 片狀 1%硝酸 鋁 15 3 25V, 28A 電熱線加熱 3 99.95 0.1 100g 球狀 2%硝酸 鋁 15 3 30V: 28A 電熱線加熱 3 99.96 0.1 4 100g 鋁碎屑 】%氫氧 化鋁 15 30V: 28A 電熱線加熱 3 99.96 0.1 5 100g 片狀 】%氫氧 化鈣 10 30 30V, 28A ' 電熱線加熱 4 99.96 0.15 6 100〇 片狀 1%氫氧 化鋇 15 20 30V, 28A 電熱線加熱 20 99.96 0.15 201127747 Γ 化鋇 ---------^ !? 150g 球狀 ]%硝酸 15 Λ 1000W [—4 ^ 1 鋁 微波加埶 3| 99^961 0.1 ——1 ---—一 __ 弟8至第10實施例與第1實施例之製程條件芦里處 表一’其中,第1Q實施例之反應物中另添加有30wi% 為雜劑,各實闕其㈣程條件與第〗實施 的果可Γ,該第8至第]G實施例的圓筒狀 :.96%’再現性相當高,含氧量亦僅為。.2二;= =反應僅讀分鐘便可完成,可大幅提升製程效率及轉化 實施例 鋁粉 8 100g 片狀 9 片狀 10 ]00g 球狀 1%硝酸 |S_ — ]%氫氧 1 %氫氧The addition of D &quot;up to this&quot; completes the nitrided preparation process of the present invention, thereby increasing the conversion of aluminum argon. In addition, the reactant preparation step can be selectively carried out by the following treatments [especially, the volume occupied by the reactants in the container (4) total weight of the whole body/reactant stack) is higher than the peak; In order to avoid the decrease of the conversion rate, the reactant is preferably at least one of the following treatments: a diluent is mixed with the surface and the surface modifying agent as a wide reactant, and the diluent is high in melting point and does not participate in the reaction. ::Optional Free Nitrogen 丨N)Sale Qing 4), Nitriding Tai (3)N), Nitride Peng (BN), Carbonized Stone Xi (%), Oxidation Shao (5) Office ^ Huayin (Construction 'Dioxide Chin (10)) And the group of dioxotomy (10) = _ touch the powder, increase the gap between the shaft powder I to help absorb heat, the temperature should be too high. The riding agent accounts for _~8 of the total weight of the reactants by weight percentage, and is preferably a war. And (7) additionally placing at least one non-porous or porous junction on the reaction, and then selecting the reactant to be placed in the container, and the reaction needle can be added to increase the gap to the content. The circulation of the sister. The inner diameter of the saki is selected as 卜^, the::3__, the diameter of the perforation of the pipe wall is selected as = ??^, if the porous pipe is selected, the total area of the perforation is occupied by ^= The wall area is ~~· to enhance the nitrogen content (3) and the initiator is laid on the reactant. The initiator refers to the knife or gasification under Lvwenrong-'趟'乂 under 18—201127747 a compound, for example, a group consisting of a compound of free chemistry, such as ammonium chloride, a compound containing 1, (1, 4, 4), a halogen-containing fine powder, and a chain foil ball, to assist the reaction. The bismuth powder in the product produces combustion. # Before laying a layer of high temperature resistant isolation compound on the container, then the reaction, W ^ , placing the square; in the έ玄谷器, 'the isolation compound is located in the container and the reaction privately; ^ ^ people, between To help absorb heat and thus increase conversion rate. The isolating material can be selected from nitrides, oxides, carbides or other high temperature resistant materials. For example, the present invention selects aluminum nitride as the isolation compound. The aluminum nitride product is affected by the nitriding chain product formed by the combustion synthesis reaction between the isolating compound and the reactant. Purity. The barrier can be selected as non-porous or porous (four). In addition, in the heating and burning step S2, the column can be selectively treated, ^•, 甘+β±", &lt;丁广〇1%^, the content of the surface modifier is lower than the total weight of the reactant When the aluminum is under 0 U, the amount of the surface modifying agent is small, and the surface of the ceramic layer may not be formed after most of the crucible is formed. Therefore, it is preferred that the reactants start to react and cry an oxygen-containing gas. For example, oxygen or air, the vacuum withstand voltage is passed. °, the oxygen-containing gas is passed through the gap between the aluminum powder and the contact 'so that the oxygen-containing gas can be oxidized with the (10) to raise the ceramic layer of the ceramic powder to form an oxide layer of the ceramic material' to further Lifting the recharge degree; then turning off the oxygen-containing gas, and re-expanding the gas-containing gas to the vacuum pressure-resistant reactor, so that the layer coated with the ceramic layer is in the ancient and/or nitrogen-containing gas As described in the foregoing reaction mechanism, the ceramic enamel is also broken, so that the internal aluminum powder can sufficiently form an aluminum nitride product with the gas-containing gas. Therefore, the Tauman layer can be formed more uniformly on the surface of the powder by passing the oxygen-containing gas. As described above, the production of the aluminum nitride powder can be completed by the above-described reactant preparation step s] and the heating and burning step S2. The aluminum nitride product obtained by the completion of the reaction can be further ground into powdery particles for use as a further step. The following is an example of the preparation method of the aluminum nitride of the present invention under various conditions to verify that the present invention can greatly improve the production efficiency and conversion rate of aluminum nitride and simplify the process. Referring to Table 1, it is the spring reaction conditions of the seventh to seventh embodiments of the present invention. Taking the first embodiment as an example, 100 g of flake aluminum powder and 1 wt% of aluminum hydroxide (surface modifier) are first mixed as the reactant, and the diameter is 8 cm, the height is 9 cm, and the perforation rate is 15 〇/ A graphite crucible (container) of 0 is placed with a layer of aluminum nitride powder (high temperature resistant isolation compound) having a particle size of 〇·〗 3mm, and then a non-porous cylindrical aluminum foil (barrier layer) is placed in the graphite. In the event of a disaster, the reactant was placed in a cylindrical aluminum foil, and finally the aluminum nitride powder was uniformly filled between the cylindrical aluminum foil and the ruthenium graphite. The graphite crucible containing the reaction product is placed in the vacuum pressure-resistant reactor, and the vacuum is firstly applied to the crucible.] Taur (ton·) simultaneously passes the atmosphere of 3 atmospheres from the bottom and sides of the graphite crucible. (including nitrogen gas), heating with tungsten wire coil (heating wire) (voltage: 3 volts 'current: 28 amps), heating for about 30 seconds, combustion synthesis reaction is ignited, then turn off the tungsten wire coil power supply And the graphite is vented to the bottom of the air (oxygen-containing gas) for 1 minute, the air flow rate is 20 liter / min - 'then continuously continue to pass nitrogen to maintain the pressure in the vacuum withstand pressure reactor is 3 atm (recharged nitrogen pressure) ), the reaction is completed in about 60 seconds, and the 20 - 201127747 aluminum nitride product is obtained. After the aluminum nitride product 〆, ^ 〜 part is taken out, it is a light yellow loose powder limb 'this nitrogen gamma product is de-milled and determined by X-ray diffractometer (XRD), as shown in Figure 7, The middle arrow indicates the diffraction peak of Nitride, which is shown as aluminum nitride powder without flaws, α w &quot; a, ",, taste" and put a few grams of aluminum nitride powder into 15wt% Hydrochloric acid (HC1) solution is extracted from the residual aluminum in the wx, and the hydrogen is collected by the drainage and gas collection method, and the enthalpy is calculated by using the makeup 隹 丄 丄 丄 & 方 方 方 方 方 方 方 方 方 方 方 方 方 方 方 方 方 方The rate is about 99.96%, and the product is analyzed by the nitrous oxide analyzer to obtain an oxygen content of about 1515.5%. The process conditions of the second to seventh embodiments and the first yoke yoke are different. The seventh embodiment of the table of 'the towel' is heated by microwaves, and after heating, it is the same as the first embodiment. The remaining process conditions of the embodiments are the same as those of the first embodiment. As a result, it can be seen that the conversion rate of the first to seventh embodiments can reach 99.95% or more regardless of heating by a heating wire or heating by microwave, and the reproducibility is relatively high, and the oxygen content is high. Only 0.15%, and the overall reaction can be completed in only a few minutes, which can greatly improve the process efficiency and conversion rate. Table 1. Differences in reaction conditions of the first to seventh embodiments Example Jinlu powder modifier (wt% Perforation rate of container (%) Nitrogen pressure (atm) Heating method Recharge nitrogen pressure (atm) Conversion rate (wt%) Oxygen content (wt%)] 100g Flaky 1% aluminum hydroxide 15 A &gt; 30V: 28A Heating wire heating 3 99.96 0.15 2 100g flake 1% aluminum nitrate 15 3 25V, 28A heating wire heating 3 99.95 0.1 100g spherical 2% aluminum nitrate 15 3 30V: 28A heating wire heating 3 99.96 0.1 4 100g aluminum crumbs]% Aluminum hydroxide 15 30V: 28A heating wire heating 3 99.96 0.1 5 100g flakes]% calcium hydroxide 10 30 30V, 28A ' heating wire heating 4 99.96 0.15 6 100 〇 flakes 1% barium hydroxide 15 20 30V, 28A electricity Hot wire heating 20 99.96 0.15 201127747 Γ 钡---------^ !? 150g Sphere]% nitric acid 15 Λ 1000W [—4 ^ 1 Aluminum microwave 埶 3| 99^961 0.1 ——1 -- - a __ _ 8 to 10th embodiment and the process conditions of the first embodiment, the reed table 1 ', of which, the inverse of the 1Q embodiment An additional 30 wi% of the dopant was added to the solution, and the conditions of the (four) conditions and the results of the first embodiment were obtained. The cylindrical shape of the eighth to the third embodiment was: .96%' reproducibility was quite high. The oxygen content is also only. .2 2; = = The reaction can be completed in only minutes, which can greatly improve the process efficiency and conversion of the example aluminum powder 8 100g flakes 9 flakes 10 ]00g spherical 1% nitric acid | S_ — ]% hydrogen oxygen 1 % hydrogen oxygen

改質劑 (wt%) 容器穿瓦 率(%) 10 圓同狀銘 箱之穿孔 率(%) 加熱方式 空氣通 入時間 (min) 轉化率 (wt%) 含氧量 (wt%) 50 30Y 40A 電熱線加熱 1.5 99.96 0.15 30 ----- 30V. 28A 電熱線加熱 2 99.96 0.2 20 — 35V: 28A 電熱線加熱 1 1 99.96 0.15 入第η及第12貫施例與第丨實施例之製程條件差異處 列方;表二,其餘製程條件與第1實施例相同。 友由結果可得知,該第】]實施例係於反應物上鋪設 一,安作為起始劑,以幫助該反應物產生燃燒;第12 貝丘^ ‘將㉝粉、表面改質劑及2 5wt%的氮化|g (稀釋劑 )/、同此5作為該反應物,以提升鋁粉顆粒之間的空隙。 201127747 該二實施例轉化率皆可達到99.96%,再現性相當高,含氧 量亦僅有0.2%以下,且整體反應僅需數分鐘便可完成,可 大幅提升製程效率及轉化率。 表三、第11及第〗2實施例之反應條件差異 實施例 鋁粉 改質劑 稀釋劑 起始劑 加熱方式 空氣通 入時間 (min) 轉化率 (wt%) 含氧量 (wt%) 11 l〇〇g 片狀 3m冰 無 氯化銨 30V; 30A 電熱線加熱 T5^ 99.96 0.2 12 l〇〇g 片狀 3wt% 氫 氧化銘 25wt% 氮化鋁 無 30V, 28A 電熱線加熱 1 99.96 0.1Modifier (wt%) Vessel wear rate (%) 10 Perforation rate of round-shaped box (%) Heating mode Air passage time (min) Conversion rate (wt%) Oxygen content (wt%) 50 30Y 40A heating wire heating 1.5 99.96 0.15 30 ----- 30V. 28A heating wire heating 2 99.96 0.2 20 — 35V: 28A heating wire heating 1 1 99.96 0.15 into the η and 12th embodiment and the process of the third embodiment The condition difference is listed; in Table 2, the remaining process conditions are the same as in the first embodiment. According to the results, the first embodiment is laid on the reactants, and the ampoule is used as a starter to help the reactants to burn; the 12th bakelite '33 powder, surface modifier and 2 5 wt% of nitriding|g (diluent) /, the same as 5 as the reactant to raise the gap between the aluminum powder particles. 201127747 The conversion rate of the two examples can reach 99.96%, the reproducibility is quite high, the oxygen content is only 0.2% or less, and the overall reaction can be completed in only a few minutes, which can greatly improve the process efficiency and conversion rate. Table 3, Differences in Reaction Conditions of the 11th and 2nd Embodiments Example Aluminum Powder Modifier Diluent Starter Heating Mode Air Passing Time (min) Conversion Rate (wt%) Oxygen Content (wt%) 11 L〇〇g flake 3m ice without ammonium chloride 30V; 30A electric heating wire T5^ 99.96 0.2 12 l〇〇g flake 3wt% hydrazine Ming 25wt% aluminum nitride no 30V, 28A heating wire heating 1 99.96 0.1

第13至第15實施例與第1實施例之製程條件差異處 列於表四中,且第13至第15實施例於該電熱絲通電加熱 30秒至該反應物燃燒後,並未通入空氣,而是直接充入氮 氣;其中,第15實施例係於該反應物中另行置放多孔鋁管 ’以利氣體通過。各實施例其餘製程條件與第1實施例相 同。The difference of the process conditions of the thirteenth to fifteenth embodiments and the first embodiment is shown in Table 4, and the thirteenth to fifteenth embodiments are not heated until the electric heating wire is electrically heated for 30 seconds until the reactant is burned. The air is directly filled with nitrogen gas; wherein, in the fifteenth embodiment, a porous aluminum tube is separately placed in the reactants to facilitate gas passage. The remaining process conditions of the respective embodiments are the same as those of the first embodiment.

由表四結果可得知,該第13至15實施例,轉化率皆 可達到99.96%以上’再現性相當高,含氧量亦僅有〇2% 以下’且整體反應僅f數分鐘便可完成,可大幅提升製程 效率及轉化率 實施 例 丨銘粉丨改質劑;器穿差異 (wt°/〇) 孔 (%) 率 13 i〇〇g 片狀 4% 氫氧化鋁 20 14 l〇〇g 片狀 0.5% 氫氧化鋁 15It can be seen from the results in Table 4 that in the 13th to 15th embodiments, the conversion rate can reach 99.96% or more, the reproducibility is quite high, the oxygen content is only less than %2%, and the overall reaction is only f minutes. Completed, can greatly improve process efficiency and conversion rate. Example: 丨明粉丨 modifier; device wear difference (wt°/〇) hole (%) rate 13 i〇〇g sheet 4% aluminum hydroxide 20 14 l〇 〇g flake 0.5% aluminum hydroxide 15

無孔I&quot; 10〇2 片狀 30% 氫氧化鋁 30 ® ^銘 泊&lt; ! 率(%) 1壓力 1) 加熱方式 回充氮 氣壓力 (atm) 轉化 率 (wt%) 含氧量 (wt%) 30V,28A 電熱線加熱 3 99.96 5T 30V, 35A 電熱線加熱 3 99.97 0.2 30V, 28A 電熱線加熱 2 99.96 0.15 〜23 201127747 第16及第17實施例與第〗實施例之製程條件差異處 列於表五中,且第]6及第π實施例於該電熱絲通電加熱 3〇秒至該反應物燃燒後,係將第1實施例之空氣(含氧氣 體)置換為氧氣通入該真空耐壓反應器後,再回充氮氣, 且該第16實施例所鋪設之氮化鋁粉體為〇 5〜3nm,其餘 製程條件與第1實施例相同。 由表五結果可得知,該第16及17實施例,轉化率皆 可達到99.9%以上,再現性相當高,含氧量亦僅有〇.3%以 下,且整體反應僅需數分鐘便可完成,可大幅提升製程效 率及轉化率。 表五、第16 實施例 鋁粉 _改質劑 16 ]00g j Wt%氫氧 片狀 化鋁 17 l〇〇g Twt%—氧 片狀 化鋁 實施例之反應條件差異 起始劑 氮氣壓力 (atrn) 氧氣通入 時間(秒) 回充氮氣壓1轉化率 力(atm) l(wt%) 含氧量 (wt%) &gt; t \ N 4 15 3 99.95 0.2 氯化銨 Γ~ 4 30 4; 99.9 1 0.3 第】8至第21貫施例與第】實施例之製程條件差異處 列於表六中,其餘製程條件與第丨實施例相同。 八=表六結果可得知,該第18至第2】實施例所使用之 鋁知里達20〇g或35〇g ’轉化率仍可達到99·96%之高轉化 率再現丨生相^尚,含氧量亦僅有0.25%以下,且整體反 應僅需數分鐘便可完成,因此本案之氮触之製備方法即 =為大量之反應物亦可充分反應,而可避免氣體無法 刀德粉之間的空隙經過的缺點,可提升轉化率。 含氧量 201127747 (wt%) 壓力 (atm) 入時間 (min) 氣壓力 (atm) (wt%) (wt%) 18 200g 銘碎屑 1 %氫氧化鋁 Λ 30V: 28Α 電熱線加熱 1 3 99.96 0.25 19 2〇〇g 片狀 2%氫氧化鋁 +1%硝酸鋁 3 35V: 30A 電熱線加熱 ]·5 3 99.96 0.2 20 350g 球狀 10%氫氧化 鋇 3 15V, 25A 電熱線加熱 1 3 99.96 0.15 21 350g 球狀 5%硝酸鋁 3 40V: 30A 電熱線加熱 2 3 99.96 0.15 此外,所製備之氮化鋁粉體的掃瞄式電子顯微鏡( scanning electron microscope, SEM)結果如附件一所示, 可明顯得知所形成之氮化銘粉體之間仍保有空隙,可驗證 本發明於燃燒合成反應過程中,鋁粉之間確實保有空隙供 氣體通過,因而達到高轉化率之效果。 透過上述各貫施例可明確驗證本發明之氮化銘之製 備方法,透過使該表面改質劑與該鋁粉均勻混合,確實可 於該鋁粉表面均勻形成該耐高溫之陶瓷層,進而提升避免 鋁如間產生融聚現象之效果,使該鋁粉間可保有空隙供氣 體充分流經該鋁粉之表面,而與該鋁粉充分進行反應,提 升氮化鋁之轉化率。 雖然本發明已利用上述較佳實施例揭示,然其並非用 以,定本發明,任何熟習此技藝者在錢離本發明之精神 矛範圍之^,相對上述實關進行各種更動與修改仍屬本 ^明所保瞍之技*鱗,@此本發明之保護範圍當視後附 之申凊專利範圍所界定者為準。 一 25—— 201127747 【圖式簡單說明】 ^圖·:本發明氮⑽之製備方法的流程圖。 ^ 2圖:本發明ls粉與表面改f劑暴露於含氮氣體下的 示意圖。 ί3圖:本發明_表面形成陶t層的示意圖。 弟4圖:本發鴨融態_包覆於陶竞層_示意圖。 :5圖:本發明陶瓷層因高溫破裂的示意圖。 第6圖:本發明氮化鋁產物的示意圖。 第7圖:本發日歧化狀f備方法所製得之氮化 的XRD圖。 附件-:本發賴⑽之製備方法所製得U化 的的SEM圖。 &amp; 【主要元件符號說明】 文容融態的產呂 含氮氣體 氮化鋁 1 鋁粉 2 表面改質劑 4 陶瓷層Non-porous I&quot; 10〇2 flake 30% aluminum hydroxide 30 ® ^ Ming Po &lt; ! rate (%) 1 pressure 1) heating method backfilling nitrogen pressure (atm) conversion rate (wt%) oxygen content (wt %) 30V, 28A heating wire heating 3 99.96 5T 30V, 35A heating wire heating 3 99.97 0.2 30V, 28A heating wire heating 2 99.96 0.15 ~ 23 201127747 Differences between the processing conditions of the 16th and 17th embodiments and the first embodiment In Table 5, and in the sixth and third embodiments, after heating the heating wire for 3 seconds until the reactant is burned, the air of the first embodiment (oxygen-containing gas) is replaced by oxygen into the vacuum. After the pressure-resistant reactor was charged, nitrogen gas was again charged, and the aluminum nitride powder laid in the sixteenth embodiment was 〇5 to 3 nm, and the rest of the process conditions were the same as in the first embodiment. It can be seen from the results in Table 5 that in the 16th and 17th embodiments, the conversion rate can reach 99.9% or more, the reproducibility is quite high, the oxygen content is only less than 3%, and the overall reaction takes only a few minutes. Can be completed, which can greatly improve process efficiency and conversion rate. Table 5, Example 16 Aluminum Powder_Modifier 16]00g j Wt% Hydrogen Oxide Sheet Aluminum 17 l〇〇g Twt%—Oxygen Flaky Aluminum Example Reaction Conditions Difference Initiator Nitrogen Pressure ( Atrn) Oxygen access time (seconds) Backfilled nitrogen pressure 1 Conversion force (atm) l (wt%) Oxygen content (wt%) &gt; t \ N 4 15 3 99.95 0.2 Ammonium chloride Γ~ 4 30 4 99.9 1 0.3 The difference between the process conditions of the eighth to twenty-first embodiments and the first embodiment is shown in Table 6. The other process conditions are the same as those of the third embodiment. Eight = Table 6 results show that the 18th to 2nd embodiment used aluminum Zhilida 20〇g or 35〇g 'conversion rate can still reach 99.96% high conversion rate reproduction twin phase ^ Still, the oxygen content is only less than 0.25%, and the overall reaction can be completed in only a few minutes. Therefore, the preparation method of the nitrogen contact in this case is that the reaction can be fully reacted for a large amount of reactants, and the gas can not be avoided. The disadvantage of the gap between the powders can increase the conversion rate. Oxygen content 201127747 (wt%) Pressure (atm) Into time (min) Gas pressure (atm) (wt%) (wt%) 18 200g Integrity 1% aluminum hydroxide Λ 30V: 28Α Heating wire heating 1 3 99.96 0.25 19 2〇〇g flake 2% aluminum hydroxide + 1% aluminum nitrate 3 35V: 30A heating wire heating · · 5 3 99.96 0.2 20 350g spherical 10% barium hydroxide 3 15V, 25A heating wire heating 1 3 99.96 0.15 21 350g spherical 5% aluminum nitrate 3 40V: 30A heating wire heating 2 3 99.96 0.15 In addition, the scanning electron microscope (SEM) results of the prepared aluminum nitride powder are shown in Annex 1. It can be clearly seen that there is still a gap between the formed nitriding powders, and it can be verified that in the process of the combustion synthesis reaction, the aluminum powder does have a gap between the aluminum powders for gas to pass, thereby achieving the effect of high conversion. Through the above various examples, the preparation method of the nitriding of the present invention can be clearly verified. By uniformly mixing the surface modifying agent with the aluminum powder, the high temperature resistant ceramic layer can be uniformly formed on the surface of the aluminum powder. The effect of avoiding the phenomenon of melting of aluminum is achieved, so that the aluminum powder can maintain a gap between the aluminum powder to fully flow through the surface of the aluminum powder, and fully react with the aluminum powder to increase the conversion rate of the aluminum nitride. Although the present invention has been disclosed in the above-described preferred embodiments, it is not intended to be used in the present invention. Any skilled person skilled in the art will be able to make various changes and modifications to the above-mentioned actual conditions. ^Technology of the stipulations of the stipulations of the stipulations of the stipulations of the invention. A 25 - 201127747 [Simple description of the figure] ^ Figure: Flow chart of the preparation method of the nitrogen (10) of the present invention. Fig. 2 is a schematic view showing the exposure of the ls powder and the surface modifying agent of the present invention to a nitrogen-containing gas. Figure 3: Schematic diagram of the present invention_surface forming a ceramic layer. Brother 4: The hair of the duck is melted _ wrapped in the Tao Jing layer _ schematic. Fig. 5 is a schematic view showing the cracking of the ceramic layer of the present invention due to high temperature. Figure 6: Schematic representation of the aluminum nitride product of the present invention. Figure 7: XRD pattern of nitriding prepared by the method of disproportionation. Attachment -: An SEM image of the U-form prepared by the preparation method of the present invention (10). &amp; [Description of main component symbols] Wenrong Rongzi production Lu nitrogenous body Aluminum nitride 1 Aluminum powder 2 Surface modifier 4 Ceramic layer

Claims (1)

201127747 七、申请專利範圍: 1、 一種氮化鋁之製備方法,包含: 一反應物調配步驟,將粉及一表面改質劑均勻混合形 成一反應物,並將該反應物置放於一容器中;及 . 一加熱燃燒步驟,使該容器中的反應物暴露於一含氮氣 • 體中,並加熱至660°C以上的溫度使該反應物燃燒,於 加熱過程中,該表面改質劑與該鋁粉產生表面改質反應 φ ,以於該I呂粉之表面形成一陶瓷層,且該紹粉因燃燒而 與該含氮氣體進行燃繞合成反應而形成氮化鋁。 2、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟中,該表面改質劑係直接與該鋁粉產生 該表面改質反應而形成該陶瓷層。 3、 依申晴專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟中,該表面改質劑係間接與該鋁粉產生 該表面改質反應而形成該陶瓷層。 • 4、依申請專利範圍第i項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟中,該表面改質劑係因熱分解產生一活 性物質,再透過該活性物質與該鋁粉產生該表面改質反 . 應而形成該陶曼層。 5、依申請專利範圍帛1項所述之氮化I呂之製備方法,其中 . 以水、氫氧化鋁、硝酸鋁、氫氧化鎂、氩氧化鈣及氫氧 化鋇所組成之群組作為該表面改質劑。 6依申明專^乾圍第1項所述之氮化紹之製備方法,其中 该表面改質剖以重量百分比計係佔該反應物總重之0.1 —27 一 201127747 〜30%。 7、 依申請專利範圍帛6項所述之說化紹之製備方法,其中 送表面改質劑以重量百分比計係佔該反應物總重之】 〜5%。 8、 依申請專利範圍帛】項所述之氣化铭之製備方法,其中 該反應物調配步驟中,該鋁粉及表面改質劑另與―稀釋 劑共同均勻混合形成該反應物。 =申。月專利範圍第8項所述之氮化銘之製備方法,其中 違擇由氮化紹(A1N)、氮化石夕(Si3N4.)、氮化敍(TiN 氮化石朋(BN)、碳化矽(sic)、氧化紹(Al2〇3)、 乳化錯(ZK)2)、二氧化欽(Ti〇2)及二氧化矽(抓 )所組成之群組作為該稀釋劑。 - 、依申請專利範圍帛8項所述之氮化銘之製備方法,其中 该稀釋劑以重量百分比計係佔該反應物總重之_〜肋 % ° 】]依申凊專利範圍第]項所述之氮化紹之製備方法,其中 ,反應物調配步驟中,另於該反應物中設置至少—個鋁 管。 ’’ 12、依申請專利範圍帛]項所述之氮化紹之製備方法,其中 該反應物調配步驟中,另於該反應物上鋪設—起始劑, 且該起始劑能夠在66CTC以下分解或氣化。 片 依申4專利範圍第丨項所述之氮化㉝之製備方法,其中 該反應物調配步驟中,係先於該容器鋪設—層隔離^合 物後’再將該反應物置放於該容器内,使得該隔離化: 物係介於該容器及反應物之間。 σ -28 - 201127747 14、 依申請專利範圍第13項所述之氮化鋁之製備方法,其 中該隔離化合物與該反應物之間另設置有一阻絕層。 15、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟中,該含氮氣體之壓力係為0.1〜30大 氣壓。 16、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟中,該反應物燃燒後,使一含氧氣體與 該反應物接觸後,關閉該含氧氣體,再重新使該含氮氣 體與該反應物接觸。 17、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該含氮氣體係選自由氨氣、氮氣及空氣所組成之群組。 18、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟當中,係以電熱線、微波、雷射或紅外 線之方式進行加熱。 19、 依申請專利範圍第1項所述之氮化鋁之製備方法,其中 該加熱燃燒步驟當中,係形成氧化物、氫氧化物、氮化 物或氮氧化物材質之陶瓷層。 —29 —201127747 VII. Patent application scope: 1. A method for preparing aluminum nitride, comprising: a reactant preparation step, uniformly mixing a powder and a surface modifier to form a reactant, and placing the reactant in a container; And a heating combustion step of exposing the reactants in the vessel to a nitrogen-containing gas and heating to a temperature above 660 ° C to burn the reactants. During the heating process, the surface modifier is The aluminum powder generates a surface modification reaction φ to form a ceramic layer on the surface of the I-lu powder, and the powder is combusted with the nitrogen-containing gas by combustion to form aluminum nitride. 2. The method for preparing aluminum nitride according to claim 1, wherein in the heating and burning step, the surface modifying agent directly reacts with the aluminum powder to form the ceramic layer. 3. The method for preparing aluminum nitride according to claim 1, wherein in the heating and burning step, the surface modifying agent indirectly reacts with the aluminum powder to form the ceramic layer. 4. The method for preparing aluminum nitride according to claim i, wherein in the heating and burning step, the surface modifying agent generates an active substance by thermal decomposition, and then transmits the active material and the aluminum powder. The surface is modified to form the Tauman layer. 5. A method for preparing a nitrided I-lu according to the scope of the patent application, wherein the group consisting of water, aluminum hydroxide, aluminum nitrate, magnesium hydroxide, calcium aroxide and barium hydroxide is used as the group. Surface modifier. The preparation method of the nitriding according to claim 1, wherein the surface modification is 0.1-27 to 201127747 to 30% by weight of the total weight of the reactant. 7. The preparation method according to the application of the patent scope 帛6, wherein the surface modifying agent is 5% by weight of the total weight of the reactant. 8. The method for preparing a gasification according to the scope of the patent application, wherein the aluminum powder and the surface modifying agent are uniformly mixed with a diluent to form the reactant. = Shen. The preparation method of the nitriding in the eighth paragraph of the patent scope, wherein the violation is made by nitriding (A1N), nitriding cerium (Si3N4.), nitriding (TiN nitriding (BN), niobium carbide ( As the diluent, a group consisting of sic), oxidized (Al2〇3), emulsified (ZK) 2), dioxin (Ti〇2), and cerium oxide (scratch) is used. - The preparation method of the nitriding according to the scope of the patent application 帛8, wherein the diluent accounts for _~ rib% of the total weight of the reactant by weight percentage]] In the preparation method of the nitriding, in the reactant compounding step, at least one aluminum tube is further disposed in the reactant. ''12. According to the preparation method of the nitriding according to the scope of the patent application, wherein the reactant preparation step, the initiator is laid on the reactant, and the initiator can be below 66 CTC. Decompose or gasify. The method for preparing nitriding 33 according to the invention of claim 4, wherein in the reactant compounding step, the reactant is placed in the container before the layer is separated from the container. Internally, the isolation: the system is between the container and the reactant. σ -28 - 201127747 14. The method for preparing aluminum nitride according to claim 13, wherein a barrier layer is further disposed between the isolation compound and the reactant. 15. The method for preparing aluminum nitride according to claim 1, wherein the pressure of the nitrogen-containing gas in the heating and burning step is 0.1 to 30 atm. The method for preparing aluminum nitride according to claim 1, wherein in the heating and burning step, after the reactant is burned, an oxygen-containing gas is brought into contact with the reactant, and the oxygen-containing gas is turned off. The nitrogen-containing gas is again brought into contact with the reactant. 17. The method for preparing aluminum nitride according to claim 1, wherein the nitrogen-containing system is selected from the group consisting of ammonia, nitrogen and air. 18. The method for preparing aluminum nitride according to claim 1, wherein the heating and burning step is performed by means of a heating wire, a microwave, a laser or an infrared ray. 19. The method for preparing aluminum nitride according to claim 1, wherein the heating and burning step forms a ceramic layer of an oxide, a hydroxide, a nitride or an oxynitride. —29 —
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TWI629237B (en) * 2016-11-28 2018-07-11 國立清華大學 A method for producing aluminum nitride

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JP7185865B2 (en) * 2019-01-09 2022-12-08 株式会社燃焼合成 Method for producing spherical AlN particles
WO2021112146A1 (en) * 2019-12-05 2021-06-10 株式会社トクヤマ Method for producing metal nitride
KR20220110742A (en) * 2019-12-05 2022-08-09 가부시끼가이샤 도꾸야마 Method for manufacturing metal nitride
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TWI629237B (en) * 2016-11-28 2018-07-11 國立清華大學 A method for producing aluminum nitride

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