TW201125148A - A simple manufacture process to obtain near stoichiometric CuxZn-SnSy(CZTS) thin films used for solar cells - Google Patents

A simple manufacture process to obtain near stoichiometric CuxZn-SnSy(CZTS) thin films used for solar cells Download PDF

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TW201125148A
TW201125148A TW099100741A TW99100741A TW201125148A TW 201125148 A TW201125148 A TW 201125148A TW 099100741 A TW099100741 A TW 099100741A TW 99100741 A TW99100741 A TW 99100741A TW 201125148 A TW201125148 A TW 201125148A
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tin
copper
zinc
film
alloy
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TW099100741A
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TWI402996B (en
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Min-Yen Yeh
Tong-Hsing Wu
Chin-Cheng Li
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Univ Nat Kaohsiung Marine
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to a simple manufacture process to obtain near stoichiometric Cu2ZnSnS4(CZTS) thin films used for solar cells. The preparation of the CZTS thin-film absorption layer is described as following. Firstly, materials of copper, zinc, and tin were mixed to make an alloy of CuZnSn. The CuZnSn alloy was used to form a CuZnSn thin film on substrates through physical deposited methods. Finally, The CuZnSn thin film was transformed into Cu2ZnSnS4 through a sulfurization process.

Description

201125148 六、發明說明： 【發明所屬之技術領滅 [画]本發明係關於’種以銅鋅錫（CuZnSn )合金製備太陽能電 池的CuxZnSnSy(CZTS)薄膜之方法，尤指一種（Cll Zn-Sns4)薄膜之製程。 1 [先前技術3 [〇〇〇2]太陽能電池在目前能源有限之環境下，為許多產業逐漸 重視，而大多數的太陽能電池目前為矽晶圓太陽能電池 0 ，主要係矽晶圓太陽忐電池具有轉換效率較佳、設備較 為低廉、生產效率杈為快速以及良率容易達到等優勢。 但是由於原料因素’即多晶砂材料相對缺乏以及所帶動 之成本上揚’尤其是在製造大面積發電模組時，其相對 之成本因素更為明顯。 _3]因此，市場上在不斷研發下，逐漸麵謂「薄膜太陽能 電池J產生，可以在不同且多樣之基板上製造，例如軟 勃之塑膠基板（或者玻璃、或其他板材），因此可以具有 〇 相#之撓性來祕多種環境1且薄獻電池，'其 在塑膠、玻璃或是其他板材上形成光電效應所需要之厚 度需求相#低，而可以在同—勉面積下，材料相對節 [0004] 099100741 而各種薄膜太陽能電池之種類中，除了料膜太陽能電 也之外，銅銦鎵砸Cu(In，Ga)s GS)薄 池的發展亦有相當不錯的成果，“《膜太陽能電池 面臨材料組成成分中銦和鎵（In，Ga)為稀有元素， 格高昂’且砸⑽具有毒性等問題，因此以地球上薇含、 表單編號A0101 . 、· 3 第3頁/共13頁 0992001501-0 201125148 量較多的鋅與錫CZn’Sn)及較無毒害的硫（s)分別取代銦 和鎵（In，Ga)及硒（Se)，便可製作出無毒害且低成本之 銅辞錫硫（CZTS)太陽能電池。 [0005] [0006] [0007] 銅辞錫硫（Ci^ZnSnS4)薄膜為Iru —Iv_v、族p型直接 能隙半導體材料，晶體結構為鋅黃錫礦結構 structure)，能隙值約為14 — ^電子伏特，其波長約 為827~886nm，折射率2. 07(refractive index)，晶 格常數：a = 0.5426nm、c=l.〇848nm ，銅鋅錫硫 (CuUnSnS4)薄膜對光的吸收性良好，在可見光範圍吸收 係數（absorption coefficient)大於 104cm-i，所以 僅需薄薄的幾私m厚即可吸收大部份的入射光，加上良好 的熱穩定性，因此相當適合作為高效率薄膜太陽電池吸 收層的使用。 銅辞錫硫（Cu2ZnSnS4)太陽能電池薄膜之各種製備技術中 ，物理性沉積被廣為使用，有以次序性的分三次分別進 行銅、鋅、錫，三層金屬薄膜沉積物者，亦有同時一次 使用三個鑛源（銅、鋅、錫）進行金屬薄膜沉積物者所 得的金屬薄膜沉積物再施以硫化製程，以得到銅鋅锡硫 (CZTS)太陽能電池薄膜，以上所指金屬薄膜沉積物的製 程複雜且難以控制比例，對於後續再施加硫化製程所得 到銅鋅錫硫（CZTS)太陽能電池薄膜的品質將難以維護。 【發明内容】 有鐘於先前技術之問題，本發明者認為應有一種改善之 製程，本發明解決先前技術問題之技術手段，係設計— 種以銅鋅錫（CuZnSn)合金製備太陽能電池的 099100741 表單編號A0101 第4頁/共13頁 0992001501-0 201125148 [0008] Cu ZnSnS (CZTS)薄膜之方法，其中，0SxS2, 0SyS4 x y 。其步驟至少包括： [0009] 1. 2. Ο 3· 分別取銅、鋅、錫（Cu、Zn、Sn)材料製備成銅 鋅錫合金Cu Zn Sn (CZT); x y z 將此銅鋅錫合金以物理性的沉積方式在基板上進行 薄膜沉積，經沉積後便可在基板上得到一層銅鋅錫 沉積薄膜； 將此銅鋅錫沉積薄膜施以硫化製程，形成可應用於 太陽能電池的銅鋅錫硫（Cu ZnSnS )薄膜。 X γ,... 該銅鋅錫Cu Zn Sn (CZT)合金之具體實施痛喺藉由加熱 X y z 達共金溫度，將銅、鋅、錫（Cu、Zn、Sn)材料形成均 勻混合的銅鋅錫Cu Zn Sn (CZT)合金。由於此法可以先 X y z 將銅、鋅、錫材料按比例，予以混合形成均勻之合金， 之後再將此合金以物理性的方式沉積到基板上以得到沉 積薄膜，因所得到的沉積薄膜中的銅、鋅、錫比例已於 之前形成合金時取得，因此沉積薄膜的比例易於控制， 製程上相對較為簡易。 【實施方式】 [0010] 以下藉由圖式之輔助，說明本發明之内容、特色以及實 施例，請參閱第一圖至第三圖所示，本發明係關於一種 太陽能電池的Cu ZnSnS (CZTS)薄膜製備方法，其步驟 X y 包括： [0011] 1.分別取銅（1 )、鋅（2)、錫（3) (Cu、Zn、Sn) 099100741 表單編號Α0101 第5頁/共13頁 0992001501-0 201125148 [0012] [0013] 099100741 材料製備成銅鋅錫合金（5):該銅鋅錫合金（5)的形 成，主要可以取銅（1)、鋅（2)、錫（3) (Cu、Zn Sn)材料’按比例混合後，透過加熱器（4)予以 加熱達合金熔解溫度後，形成銅鋅錫合金（5)。 2. 將此銅鋅锡合金（5)以物理性的沉積方式在基板（7 ) 上進行薄膜沉積，經沉積後便可在基板（7)上得到— 層铜辞錫沉積薄膜（6):於此物理性沉積乃指非化學 陡的方式，例如熱蒸著法，電漿濺鍍法、電子束蒸 鍍去、脈衝雷射沉積法等。該基板（7)可以為塑膠、 金屬破璃中之其一或二種以上之複合或其他材質 ，使传本發明具有多>〇之基板得以適用。 3. 將此鋼鋅錫沉積薄媒（6)施以硫化製程’形成可應用 於太陽说電池的鋼鋅錫硫薄膜（9):於此硫化製程乃 才曰將含銅鋅錫沉積薄膜（6)的基板（7)，置入含有硫 成伤物（8)的環境中予以加熱，以形成銅鋅錫硫薄膜 (9) °此處含有硫成份物(8)乃指疏无素、或各種硫 化物’可以用来進行硫化反應者，且此硫成份物（8) 可以是固態、液態或氣憊存在者。 本發明之具體製法說明如下：配合第一圖按比例混合 加入銅（1) '鋅（2)、錫（3)材料，然後經由加熱器（4)進 行加溫達到合金溫度後，形成鋼鋅錫合金。 然後經由第二圖所示，以物理性的沉積方式，將銅鋅錫 合金（5)沉積在基板（7)上，形成銅鋅錫沉積薄膜（6)。 之後再配合第三圖所示，將此銅鋅錫沉積薄膜（6)及基板 (7)置入含有硫成份物（8)的環境中，予以加熱進行硫化 表單編號A0101 第6頁/共13頁 0992001501 一0 201125148 製程，以得到銅鋅錫硫薄膜（9)。· ' [0014] 藉由本發明可以較為簡易的製程，有效的掌控銅鋅錫沉 積薄膜的比例，之後再施以硫化製程即可以得到所需的 銅鋅錫硫太陽能電池薄膜。本發明之方法簡易可行且沒 有尺寸的限制。 [0015] 綜上所述，由於認為本創作符合可專利之要件，爰依法 提出專利申請。惟上述所陳，為本創作產業上一較佳實 施例，舉凡依本創作申請專利範圍所作均等變化，皆屬 Ο 本案訴求標的之範疇。 【圖式簡單說明】 [0016] 第一圖係本發明之形成合金材料示意圖 第二圖係本發明薄膜沉積示意圖 第三圖係本發明之硫化製程示意圖201125148 VI. DESCRIPTION OF THE INVENTION: [Technology] The present invention relates to a method for preparing a CuxZnSnSy (CZTS) film of a solar cell using a copper-zinc-tin (CuZnSn) alloy, especially one (Cll Zn-Sns4) ) Process of film. 1 [Prior Art 3 [〇〇〇2] Solar cells are gradually gaining importance for many industries in the current limited energy environment, and most solar cells are currently silicon wafer solar cells, mainly silicon wafers. It has the advantages of better conversion efficiency, lower equipment, faster production efficiency and easy yield. However, due to the raw material factor, that is, the relative lack of polycrystalline sand material and the rising cost, especially when manufacturing large-area power generation modules, the relative cost factor is more obvious. _3] Therefore, under the continuous research and development in the market, it is gradually said that "thin film solar cells J can be produced on different and diverse substrates, such as soft plastic substrates (or glass, or other plates), so it can have 〇 The flexibility of the phase # is a variety of environments 1 and thin battery, 'the thickness requirement required for the photoelectric effect on plastic, glass or other plates is low, but the material can be in the same area [0004] 099100741 Among the various types of thin film solar cells, in addition to the film solar power, the development of copper indium gallium arsenide Cu (In, Ga) s GS) thin pool has also a very good result, "film solar energy The indium and gallium (In,Ga) are rare elements in the material composition of the battery, and the high-order and 砸(10) have toxicity problems. Therefore, the earth contains Wei, Form No. A0101.,·3 Page 3 of 13 0992001501-0 201125148 A large amount of zinc and tin CZn'Sn) and a less toxic sulfur (s) replace indium and gallium (In, Ga) and selenium (Se), respectively, to produce a non-toxic and low-cost Copper sulphur (CZTS) solar energy Pool. [0007] [0007] The copper-tin-sulfur (Ci^ZnSnS4) film is Iru—Iv_v, a family of p-type direct energy gap semiconductor materials, and the crystal structure is a zinc yellow tin structure structure, and the energy gap value is about 14 — ^ eV, its wavelength is about 827~886nm, refractive index 2. 07 (refractive index), lattice constant: a = 0.5426nm, c = l. 〇 848nm, copper zinc tin sulphur (CuUnSnS4) film for light Good absorption, absorption coefficient in the visible light range is greater than 104cm-i, so only a small amount of private thickness can absorb most of the incident light, plus good thermal stability, so it is quite suitable as The use of high efficiency thin film solar cell absorber layers. Among the various preparation techniques for copper-tin-sulfur (Cu2ZnSnS4) solar cell films, physical deposition is widely used, and copper, zinc, tin, and three-layer metal film deposits are separately ordered in three stages. A metal film deposit obtained by using three mineral sources (copper, zinc, tin) for metal film deposition is subjected to a vulcanization process to obtain a copper zinc tin sulfide (CZTS) solar cell film, and the above-mentioned metal film deposition The process of the material is complicated and difficult to control, and the quality of the copper-zinc-tin-sulfur (CZTS) solar cell film obtained by the subsequent application of the vulcanization process will be difficult to maintain. SUMMARY OF THE INVENTION In view of the problems of the prior art, the inventors believe that there should be an improved process, and the technical means for solving the prior art problem of the present invention is to design a kind of solar cell using a copper-zinc-tin (CuZnSn) alloy to prepare a solar cell. Form No. A0101 Page 4 of 13 0992001501-0 201125148 [0008] A method of Cu ZnSnS (CZTS) film, wherein 0SxS2, 0SyS4 xy . The steps include at least: [0009] 1. 2. Ο 3· respectively preparing copper, zinc, tin (Cu, Zn, Sn) materials into copper zinc tin alloy Cu Zn Sn (CZT); xyz copper zinc tin alloy Film deposition on the substrate by physical deposition, after deposition, a copper-zinc-tin deposition film can be obtained on the substrate; the copper-zinc-tin deposition film is subjected to a vulcanization process to form copper and zinc which can be applied to the solar cell. Tin sulphide (Cu ZnSnS ) film. X γ,... The specific implementation of the copper zinc tin Cu Zn Sn (CZT) alloy is formed by uniformly mixing copper, zinc and tin (Cu, Zn, Sn) materials by heating X yz to a common gold temperature. Copper zinc tin Cu Zn Sn (CZT) alloy. Since this method can firstly mix copper, zinc and tin materials by X yz to form a uniform alloy, and then deposit the alloy on the substrate in a physical manner to obtain a deposited film, because the obtained deposited film is The ratio of copper, zinc and tin has been obtained when the alloy was formed before, so the proportion of the deposited film is easy to control and the process is relatively simple. [Embodiment] The contents, features, and embodiments of the present invention will be described below with the aid of the drawings. Referring to the first to third figures, the present invention relates to a Cu ZnSnS (CZTS) for a solar cell. The film preparation method, the step X y includes: [0011] 1. Take copper (1), zinc (2), tin (3) (Cu, Zn, Sn) respectively 099100741 Form No. 1010101 Page 5 of 13 0992001501-0 201125148 [0013] 099100741 material prepared into copper zinc tin alloy (5): the formation of the copper zinc tin alloy (5), mainly copper (1), zinc (2), tin (3) The (Cu, Zn Sn) material is mixed in proportion, and then heated by the heater (4) to reach the alloy melting temperature to form a copper-zinc-tin alloy (5). 2. The copper zinc-tin alloy (5) is deposited on the substrate (7) by physical deposition, and after deposition, the copper-tin-deposited film (6) can be obtained on the substrate (7): The physical deposition refers to a non-chemically steep manner, such as thermal evaporation, plasma sputtering, electron beam evaporation, pulsed laser deposition, and the like. The substrate (7) may be a composite or other material of one or more of plastic and metal glazing, so that a substrate having a multi-> 〇 substrate of the present invention can be applied. 3. Applying the steel zinc-tin-deposited thin medium (6) to a vulcanization process to form a steel-zinc-tin-sulfur film that can be applied to the solar cell of the solar cell (9): the vulcanization process is to deposit a copper-zinc-tin-deposited film ( 6) The substrate (7) is placed in an environment containing a sulfur-inducing substance (8) and heated to form a copper-zinc-tin-sulfur film (9). Here, the sulfur-containing component (8) means no substance, Or a variety of sulfides can be used to carry out the vulcanization reaction, and the sulfur component (8) can be in the form of a solid, liquid or gas. The specific manufacturing method of the present invention is as follows: the copper (1) 'zinc (2), tin (3) material is mixed and mixed according to the first figure, and then heated by the heater (4) to reach the alloy temperature to form steel zinc. Tin alloy. Then, as shown in the second figure, a copper-zinc-tin alloy (5) is deposited on the substrate (7) by physical deposition to form a copper-zinc-tin deposition film (6). Then, as shown in the third figure, the copper-zinc-tin deposition film (6) and the substrate (7) are placed in an environment containing the sulfur component (8), and heated to be vulcanized. Form No. A0101 Page 6 of 13 Page 0992001501 A 0 201125148 process to obtain a copper zinc tin sulphur film (9). [0014] By the present invention, a relatively simple process can be used to effectively control the proportion of the copper-zinc-tin-deposited film, and then a vulcanization process can be applied to obtain a desired copper-zinc-tin-sulfur solar cell film. The method of the present invention is simple and feasible and has no size limitations. [0015] In summary, since the creation is considered to be in compliance with the patentable requirements, a patent application is filed according to law. However, the above-mentioned findings are a better example of the creative industry. Any change in the scope of patent application for this creation belongs to the scope of the claim. BRIEF DESCRIPTION OF THE DRAWINGS [0016] The first drawing is a schematic view of the alloy forming material of the present invention. The second drawing is a schematic view of the film deposition of the present invention. The third drawing is a schematic view of the vulcanization process of the present invention.

[0017] [0018] [0019] [0020] [0021] [0022] [0023] 【主要元件符號說明】 (1) .銅 (2) ·鋅 (3) ·錫 (4) .加熱器 (5) .銅鋅錫合金 (6) .銅鋅錫沉積薄膜 (7) .基板 099100741 表單編號A0101 第7頁/共13頁 0992001501-0 [0023] 201125148 [0024] (8).含硫成扮物· [0025] ( 9 ).銅鋅錫硫薄膜 0992001501-0 099100741 表單編號A0101 第8頁/共13頁[0019] [0020] [0022] [0012] [Main component symbol description] (1). Copper (2) · Zinc (3) · Tin (4). Heater (5 Copper-zinc-tin alloy (6). Copper-zinc-tin-deposited film (7). Substrate 099100741 Form No. A0101 Page 7 of 13 0992001501-0 [0023] 201125148 [0024] (8). Sulfur-containing composition · [0025] (9). Copper, zinc, tin and sulfur film 0992001501-0 099100741 Form No. A0101 Page 8 of 13

Claims (1)

201125148 七、申請專利範圍： . 1 . 一種以銅鋅錫（CuZnSn)合金製備太陽能電池的 CuxZnSnSy(CZTS)薄膜之方法’其中 其步驟至少包括：A.分別取銅、鋅、錫（Cu、zn、 Sn)材料製備成銅鋅錫合金；β•將此銅鋅錫合金以物理 性的沉積方式在基板上進行薄膜沉積，經沉積後便可在基 板上得到一層銅鋅錫沉積薄膜；c將此銅鋅沉積薄膜施以 硫化製程，形成可應用於太陽能電池的鋼鋅錫硫薄膜。 0 2 .如申請專利範圍第1項所述以銅鋅錫（CuZnSn)合金製備太 陽能電池的CuxZnSi^y(CZTS)薄膜之方法，其中該加熱 採直接加熱’或尚週波電磁幅射加熱，且該加熱所處環境 可以是一般大氣環境、真空下、或加入鈍氣。 3 .如申請專利範圍第1項所述以銅鋅錫（CuZnSn)合金製備太 陽能電池的CuxZnSnSy(CZTS)薄膜之方法，該B步驟之物 理性沉積包括熱蒸著法，電漿濺鍵法、電子束蒸鍍法或脈 衝雷射沉積法。 Q 4 ·如申請專利範圍第1項所述以銅鋅錫（CuZnSn)合金製備太 陽能電池的CuxZnSnSy(CZTS)薄膜之方法，該C步驟之硫 化製程包括將含cuxznysnz(czt)沉積薄膜的基板，置入 含有硫成份物的環境中予以加熱，以形成銅鋅錫硫 Cu ZnSnS (CZTS)薄膜，且該硫成份物係包括硫元素或 X y 可以用來進行硫化反應之硫化物，且該硫成份物為固態或 或氣態。 5 ·如申請專利範圍第1項所述以銅鋅錫（CuZnSn)合金製備太 陽能電池的Cu ZnSnS (CZTS)薄膜之方法，其中A步驟之 X y 099100741 表單編號A0101 第9頁/共13頁 0992001501-0 201125148 製備經由加熱'。， 6 .如申請專利範圍第1項所述以銅辞錫（CuZnSn)合金製備太 陽能電池的Cu ZnSnS (CZTS)薄膜之方法，其中該B步驟 X y 之基板選自塑膠、金屬、玻璃之群組中之其一或二種以上 之複合。 7 .如申請專利範圍第1項所述以銅鋅錫（CuZnSn)合金製備太 陽能電池的Cu ZnSnS (CZTS)薄膜之方法，其中C步驟經 X y 由加熱。 099100741 表單編號A0101 第10頁/共13頁 0992001501-0201125148 VII. Patent application scope: 1. A method for preparing a CuxZnSnSy (CZTS) film of a solar cell using a copper-zinc-tin (CuZnSn) alloy, wherein the steps include at least: A. taking copper, zinc, tin (Cu, zn, respectively) , Sn) material is prepared into copper-zinc-tin alloy; β• this copper-zinc-tin alloy is deposited on the substrate by physical deposition, and a copper-zinc-tin deposition film can be obtained on the substrate after deposition; The copper-zinc deposition film is subjected to a vulcanization process to form a steel zinc-tin-sulfur film which can be applied to a solar cell. 0 2 . The method for preparing a CuxZnSi^y (CZTS) film of a solar cell by using a copper zinc tin (CuZnSn) alloy according to the first aspect of the patent application, wherein the heating is directly heated by heating or a circumferential electromagnetic radiation heating, and The heating can be carried out in a general atmospheric environment, under vacuum, or by adding an inert gas. 3. A method for preparing a CuxZnSnSy (CZTS) thin film of a solar cell using a copper zinc tin (CuZnSn) alloy as described in claim 1, wherein the physical deposition of the B step comprises a thermal evaporation method, a plasma sputtering method, Electron beam evaporation or pulsed laser deposition. Q 4 · A method for preparing a CuxZnSnSy (CZTS) film of a solar cell using a copper zinc tin (CuZnSn) alloy as described in claim 1, the vulcanization process of the C step comprising: a substrate comprising a cuxznysnz (czt) deposited film, Heating in an environment containing a sulfur component to form a copper zinc tin sulfide Cu ZnSnS (CZTS) film, and the sulfur component includes sulfur or a sulfide which can be used for the sulfurization reaction, and the sulfur The ingredients are solid or gaseous. 5 · A method for preparing a Cu ZnSnS (CZTS) film of a solar cell using a copper zinc tin (CuZnSn) alloy as described in claim 1 of the patent application, wherein the X step of the A step is 0 y 099100741 Form No. A0101 Page 9 / Total 13 Page 0992001501 -0 201125148 Preparation via heating'. 6. A method for preparing a Cu ZnSnS (CZTS) film of a solar cell using a CuZnSn alloy as described in claim 1, wherein the substrate of the step B X y is selected from the group consisting of plastic, metal, and glass. One or more of the combinations in the group. 7. A method of preparing a Cu ZnSnS (CZTS) film of a solar cell using a copper zinc tin (CuZnSn) alloy as described in claim 1, wherein the C step is heated by X y . 099100741 Form No. A0101 Page 10 of 13 0992001501-0
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WO2013126540A1 (en) * 2012-02-21 2013-08-29 Zetta Research And Development Llc - Aqt Series Closed-space sublimation process for production of czts thin-films
WO2013126542A1 (en) * 2012-02-21 2013-08-29 Zetta Research And Development Llc - Aqt Series Controlled-pressure process for production of czts thin-films
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EP2032743B1 (en) * 2006-05-24 2010-10-27 ATOTECH Deutschland GmbH Metal plating composition and method for the deposition of copper-zinc-tin suitable for manufacturing thin film solar cell
US20090260678A1 (en) * 2008-04-16 2009-10-22 Agc Flat Glass Europe S.A. Glass substrate bearing an electrode
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US8828767B2 (en) 2011-12-30 2014-09-09 Industrial Technology Research Institute Fabriation method for light absorption layer of solar cell
WO2013126540A1 (en) * 2012-02-21 2013-08-29 Zetta Research And Development Llc - Aqt Series Closed-space sublimation process for production of czts thin-films
WO2013126542A1 (en) * 2012-02-21 2013-08-29 Zetta Research And Development Llc - Aqt Series Controlled-pressure process for production of czts thin-films
CN114068737A (en) * 2020-07-31 2022-02-18 全南大学校产学协力团 Preparation method of p-type semiconductor layer for inorganic thin-film solar cell
CN114068737B (en) * 2020-07-31 2024-02-13 全南大学校产学协力团 Preparation method of p-type semiconductor layer for inorganic thin film solar cell

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