201123279 六、發明說明： 【發明所屬之技術領域】 本發明關於一種去除蝕刻殘留物之方法’尤指去除蝕刻後殘 留物之同時，避免放電現象的方法。 【先前技術】 鑲嵌内連線技術係目前積體電路内多重金屬内連線 (multi-level interconnects)之主要技術，亦可說係為目前半導 體工業中銅導線之主要製作方式，其可概分為單鑲嵌(single damascene)製程以及雙鑲嵌(dual damascene)製程。其中雙鑲 鼓製程因可減少製程步驟、降低導線與插塞間之接觸電阻、 增進可靠性等優點，而被大幅採用於鎮嵌内連線技術中。此 外’為降低金屬内連線的電阻值以及寄生電容效應，以增加 訊號傳遞速度’現行之雙鑲嵌製程大多係於低介電（1〇w_K) 材料所構成之介電層中蝕刻出具有溝渠（trench)與介層洞 (via)之雙鑲嵌圖案，再填入銅金屬並加以平坦化，進而完成 金屬内連線之製作。依在介制中㈣圖案之方式來區分， 雙鎮嵌製程又可再細分為溝渠優先(trench-first)製程、介層洞 優先(via first)。卩分介層洞優先製程、以及 自行對準（self-alignecj)製程等。 但疋」^對介電層進行乾餘刻製程形成介層洞、和導線溝 渠時^會形成電荷大量蓄積在被㈣的介電層上，所以 201123279 後續以清洗溶液去除介電層上之餘刻殘留物肖，在清洗溶液 與介電層表面接觸時，就會發生放電(arcing)現象，使得元件 發生爆裂情況，造成良率下降。 【發明内容】 有鑑於此，本發明係提供一種去除飯刻殘留物之清洗方法， 決上述問題。 • 本發明揭露一種使用去除餘刻後殘留物之方法，包含：首先，提 供-基底’基底上覆有-絶緣層，—導電層設践緣層巾，並且一 介電層和-硬遮罩層覆蓋絶緣層和導電層，接著，進行—電魏刻 製程，利驛電離子侧硬料層，以軸—_化硬遮罩並露出 部分該介電層表面，之後，進行一電荷移除步驟，利用一含導電離 子之溶液清洗11案化硬遮罩和介電層，以移除在前述糊製程時， 累積於圖案化硬遮罩和介電層上的電荷，最後，移除圖案化硬遮罩 和介電層上，於該蝕刻製程時所生成的蝕刻殘留物，其中該蝕刻殘 留物不與該導電離子產生反應。 根據本發明之-較佳實施例，上叙導電溶液包含去離子水和導 電離子，例如，碳酸氫根離子邮⑹、碳酸根離子( 子_/)，並且導電溶液之電阻值係介於⑽·cm至3〇〇__cm 之間本發明利用導電溶液，去除飯刻所產生的電荷，所以不會有 大量蓄積電荷在介電層和圖案化硬遮罩上，因此，在後續移除侧 殘留物時，當清洗液接觸介電層和_化硬遮罩時，就不會發生元 件爆裂情況。 曰 5 201123279 【實施方式】 第1圖至第4圖繪示本發明之去除触刻後殘留物之方法之示音 圖。本發明之製程特別適用於銅製程(copper pr〇cess)之單鑲嵌(single damascene)或者是雙鑲嵌(dualdamascene)製程。如第1圖所示，首 先提供一基底10其上設有一介電層Π，於介電層n上覆有一絶緣 層14 ’在絶緣層14中包含有一導電層12，例如為銅導線、鋁導線 或是其它導電材料。於導電層^和絶緣層Μ±依序覆有一介電層 16以及-硬遮罩層18，其中介電層16可以為氮化♦、氧切或^ 其它介電材料所構成之多層結構，而硬遮罩層18可以為多層結構， 如第1圖所示，硬遮罩層可包含一氣化欽層2〇和一氧化石夕。 接著如第2圖所示’形成一圖案化光阻(圖未示)覆蓋部分θ之硬遮 罩層18，之後進行-蝴製程，.，電聚 或其它利用離子'原子或自由基_的方式，以介電層 停止層’轴刻硬遽罩層18後形成_圖案化硬遮單2化避 罩24具有一開口 25，開口 2 園系化硬遮 是雙鑲嵌結構之-溝渠圖案。之一介層润圖案或 子_硬_，因此在:=製程中’由於使用帶電離 在蝕刻元成後，會有大量的正電荷或負 電何累積在圖案化硬遮罩24和介電層16上。 U負 隨後，如第3圖所示，進行一 26沖洗圖案化硬鮮24和 f l驟’ _ —導電溶液 部分的電荷帶走，使得_料騎26將大 #大幅下降。在本鄉物咖含梅子水I: 201123279 子’導電離子可以為碳酸氫根離子(hco3·)、碳酸根離子(co32+)或銨 根離子(NH4 )。根據本發明之較佳實施例，導電溶液26之電阻值係 ^於1 ΚΩ-cni至3〇〇〇 ΚΩ-cm之間，並且導電溶液26之PH值較佳 ^ 3 °導t溶液26可以為上述導電離子在室溫下馳和溶液，例如 導電溶液26可在室溫室壓下，於去離子水中通入二氧化碳氣體，直 至一氧化妷在常溫常壓下於去離子水中達到飽和狀態而形成。除此 之外’電荷移除步驟亦可以_非液態之趙，例如_離子風扇201123279 VI. Description of the Invention: [Technical Field] The present invention relates to a method of removing an etching residue, particularly a method of removing a residue after etching and avoiding a discharge phenomenon. [Prior Art] Inlaid interconnect technology is the main technology of multi-level interconnects in integrated circuits. It can also be said that it is the main production method of copper wires in the semiconductor industry. It is a single damascene process and a dual damascene process. Among them, the double-drum process is widely used in the town-embedded interconnect technology because it can reduce the process steps, reduce the contact resistance between the wires and the plug, and improve the reliability. In addition, in order to reduce the resistance value of the metal interconnect and the parasitic capacitance effect, to increase the signal transmission speed, the current dual damascene process is mostly etched with a trench in a dielectric layer composed of a low dielectric (1〇w_K) material. The double mosaic pattern of the trench and the via is filled with copper metal and planarized to complete the fabrication of the metal interconnect. According to the way of mediating (four) patterns, the two-town embedded process can be further subdivided into a trench-first process and a via first. Divide the layer priority process, and self-alignecj process. However, when the dielectric layer is subjected to a dry-engraving process to form a via hole and a wire trench, a large amount of charge is accumulated on the dielectric layer of (4), so that the subsequent removal of the dielectric layer by the cleaning solution is performed in 201123279. When the cleaning solution is in contact with the surface of the dielectric layer, an arcing phenomenon occurs, causing the component to burst, resulting in a decrease in yield. SUMMARY OF THE INVENTION In view of the above, the present invention provides a cleaning method for removing cooking residue, which solves the above problems. • The present invention discloses a method of using a residue after removing a residue, comprising: firstly, providing a substrate-on-insulation layer, a conductive layer provided with a protective layer blanket, and a dielectric layer and a hard mask The layer covers the insulating layer and the conductive layer, and then, an electric Wei-cut process is performed to facilitate the hard-ion layer of the ion-ion side, and the hard mask is axially-shielded to expose a portion of the surface of the dielectric layer, and then a charge removal is performed. Step of cleaning the hard mask and the dielectric layer with a solution containing conductive ions to remove the charge accumulated on the patterned hard mask and the dielectric layer during the paste process, and finally, removing the pattern An etch residue formed on the hard mask and the dielectric layer during the etching process, wherein the etch residue does not react with the conductive ions. According to a preferred embodiment of the present invention, the conductive solution comprises deionized water and conductive ions, for example, bicarbonate ion (6), carbonate ion (sub-/), and the resistance value of the conductive solution is between (10) Between cm and 3 〇〇__cm, the present invention utilizes a conductive solution to remove the charge generated by the meal, so that a large amount of accumulated charge is not present on the dielectric layer and the patterned hard mask, and therefore, on the subsequent removal side In the case of residue, when the cleaning liquid contacts the dielectric layer and the hard mask, the component does not burst.曰 5 201123279 [Embodiment] Figs. 1 to 4 are diagrams showing a method of removing the residue after the touch of the present invention. The process of the present invention is particularly suitable for a copper pr〇cess single damascene or a dualdamascene process. As shown in FIG. 1, a substrate 10 is first provided with a dielectric layer Π, and a dielectric layer 14 is overlying the dielectric layer n. The insulating layer 14 includes a conductive layer 12, such as a copper wire or aluminum. Wire or other conductive material. The dielectric layer and the insulating layer are sequentially covered with a dielectric layer 16 and a hard mask layer 18, wherein the dielectric layer 16 may be a multilayer structure composed of nitride, oxygen, or other dielectric materials. The hard mask layer 18 may have a multi-layer structure. As shown in FIG. 1, the hard mask layer may include a gasification layer and a stone oxide. Then, as shown in FIG. 2, a patterned photoresist (not shown) is formed to cover the hard mask layer 18 of the portion θ, and then subjected to a butterfly process, electropolymerization or other use of an ion 'atoms or radicals. In a manner, the dielectric layer stop layer is formed by axially engraving the hard mask layer 18. The patterned hard mask 2 has an opening 25, and the opening 2 is a double damascene structure-ditch pattern. One of the interlayer patterns or sub-hard _, therefore, in the := process 'Because of the use of ionization after etching, there will be a large amount of positive or negative charge accumulated in the patterned hard mask 24 and dielectric layer 16 on. U-negative Subsequently, as shown in Fig. 3, the charge of the portion of the conductive solution is carried out by a pattern of 26 rinsing and hardening, so that the material ride 26 will greatly decrease. In the hometown, the coffee contains plum water I: 201123279 The child's conductive ion can be bicarbonate ion (hco3·), carbonate ion (co32+) or ammonium ion (NH4). According to a preferred embodiment of the present invention, the resistance value of the conductive solution 26 is between 1 Κ Ω-cni and 3 〇〇〇Κ Ω-cm, and the pH of the conductive solution 26 is preferably ^ 3 °. The conductive ions are allowed to pass through the solution at room temperature, for example, the conductive solution 26 can be pressurized in a room temperature chamber, and carbon dioxide gas is introduced into the deionized water until the cerium oxide is saturated in the deionized water at normal temperature and normal pressure. . In addition to this, the 'charge removal step can also be _ non-liquid Zhao, such as _ ion fan
使空氣含有大量離子，再利用帶有大量離子的空氣將累積電荷由圖 案化硬遮罩24和介電層16表面中和。 最後如第4圖所示，進行一清洗步驟以去除飯刻後殘留物，一 主=在巧/先步驟中，可使用含水量8〇重量百分比(wt%)以上的 月先洛液28例如，稀釋的氟化氫，去除在姑刻製程後殘留在圖案 ^硬遮罩和介電層的糊前物3()，和導電溶液％不同的是清洗 =液，的電阻錄向，因此，清洗溶液Μ被認為是非導電液體。 /月洗/合液28巾含有會和侧殘留物反應的離子，因此除了物理性的 ^洗之外’财化學性的料反麟助去除殘留㈣。導電溶液％ 的離=不和触刻殘留物3〇反應，其離子僅作導離電荷之用。 、&值得一提的是，前述在導電溶液26中的導電離子，亦可 / 28且28巾’降低縣清洗溶液28的電阻，使得清洗溶 之/、、電性。於是，前述之導電溶液26便可省去，改成直接 她16，也就是 另卜除了可以在清洗溶液28中加入一定濃度的導電離子使清 7 201123279 洗溶液28具有良好的導電性之外，也健可_導電溶液26在去 除殘留物之則’先進行去除電荷步驟，也就是說先以導電溶液％ 進行去除電荷麵，再以清洗溶液28 _進行電荷移除和去除钮刻 殘留物之步驟，以加強電荷移除的效果。 在完成第3·4圖中的電荷移除和清洗步驟之後，可_圖案化硬 遮罩Μ作為料，酬介 16軸溝誠是介制，之後，並 利用另-圖案化遮罩’在介電層16巾另形賴應前述溝渠的介層 洞，或是對應前述介層洞的溝渠。 〜上述的製程雖以銅製程為例，但$限於此，本發明亦可適用於其 匕製程’例如接觸插塞製程或是其它侧介電層製程。 在習知技術中，利用電漿或反應性離子蝕刻硬遮罩層，由於圖 案化之硬遮罩層和介電層兩者皆非導電材料，因此，侧過後電荷 會大量蓄積於圖案化之硬鮮層和介電層上，若是立刻使用高電阻 值的清洗絲清洗爛殘㈣，當綠溶祕綱目案化硬遮罩和 介電層表Φ時，就會產生嚴重的放電絲，造成元件爆裂，影響品 質良率，並嚴重降低產能。而本發明利用導電溶液，使得钮刻所 產生的大部分電荷，在沖洗侧殘留物之前，得峨著導電溶液離 開圖案化硬遮罩和介電層表面或被巾和，因此，可避免在後續清洗 触刻殘留物時產生放電現象。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所 做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 201123279 【圖式簡單說明】 第1圖至第4圖繪示本發明之去除蝕刻後殘留物之方法之示意圖。 【主要元件符號說明】 10 基底 12 導電層 14 絶緣層 11 ' 16 介電層 18 硬遮罩層 20 氮化鈦 22 氧化矽 24 圖案化硬遮罩 25 開口 26 導電溶液 28 清洗溶液 30 触刻殘留物The air is made to contain a large amount of ions, and the accumulated charge is neutralized by the surface of the patterned hard mask 24 and the dielectric layer 16 by using air with a large amount of ions. Finally, as shown in FIG. 4, a washing step is performed to remove the residue after the meal, and in the main = first step, the monthly liquid 28 having a water content of 8 〇 by weight (wt%) or more can be used, for example. Diluted hydrogen fluoride, remove the paste precursor 3 () remaining in the pattern ^ hard mask and dielectric layer after the etching process, and the difference of the conductive solution is the cleaning = liquid, the resistance is recorded, therefore, the cleaning solution Tantalum is considered to be a non-conductive liquid. / month wash / liquid 28 towels contain ions that will react with the side residue, so in addition to physical washing, the chemical chemical material will help remove the residue (4). The % of the conductive solution does not react with the contact residue 3〇, and the ions are only used to conduct the charge. It is worth mentioning that the above-mentioned conductive ions in the conductive solution 26 can also reduce the electric resistance of the cleaning solution 28 of the county, so that the cleaning is soluble and/or electrical. Therefore, the foregoing conductive solution 26 can be omitted and changed to directly her 16, that is, in addition to adding a certain concentration of conductive ions to the cleaning solution 28, the cleaning solution 28 has good conductivity. Also, the conductive solution 26 can remove the charge first, that is, the charge removal step is first performed, that is, the charge surface is removed first by the conductive solution, and then the charge is removed and the residue is removed by the cleaning solution 28 Steps to enhance the effect of charge removal. After completing the charge removal and cleaning steps in Figure 3.4, the hard mask can be patterned as a material, and the 16-axis groove is mediated, and then, using another-patterned mask The dielectric layer 16 is further shaped by a via hole of the trench or a trench corresponding to the via hole. The above process is exemplified by a copper process, but the present invention is also applicable to the process of the process such as a contact plug process or other side dielectric layer process. In the prior art, the hard mask layer is etched by plasma or reactive ions. Since both the patterned hard mask layer and the dielectric layer are non-conductive materials, the post-side charge is accumulated in the patterning. On the hard fresh layer and the dielectric layer, if the high-resistance cleaning wire is used immediately to clean the rotten residue (4), when the green-soluble secret film hard mask and the dielectric layer table Φ, a serious discharge wire is generated, resulting in The component burst, affecting the quality yield and seriously reducing the production capacity. However, the present invention utilizes a conductive solution such that most of the charge generated by the buttoning can leave the conductive solution away from the patterned hard mask and the surface of the dielectric layer or the towel before the residue on the rinse side, thereby avoiding A subsequent discharge occurs when the residue is washed. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. 201123279 [Simple Description of the Drawings] Figs. 1 to 4 are schematic views showing a method of removing residues after etching according to the present invention. [Main component symbol description] 10 Substrate 12 Conductive layer 14 Insulation layer 11 '16 Dielectric layer 18 Hard mask layer 20 Titanium nitride 22 Cerium oxide 24 Patterned hard mask 25 Opening 26 Conductive solution 28 Cleaning solution 30 Touch residue Object