201123207 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種儲存裝置及其操作方法，特別是一種具電壓異常保 護的儲存裝置及其操作方法。 【先前技術】 非揮發性記憶魏名思義為齡資料*會隨卫作電源敎而消失的記 憶體’其中快閃記憶體為-常用_揮發性記憶體，快閃記憶體具有省電、 耐震與存取速度快等優點，因而廣泛的被顧在電子裝置的儲存單元，取 代部分的傳統硬碟。 非揮發性纖m存裝置触外部紐，料部電歸縣儲存裝置 所需之工作電壓，以提供儲存裝置正常工作。儲存裳置中的控制器用以 接收連接於儲存裝置的主機所傳送之指令，再根據該指令對儲存裝置傳送 相關的控制命令，藉此由健存裝置存取主機所需的相關資料。 當儲存裝置地_，纖發娜_㈣例如：斷電的情 況，此時將產生正在燒錄(或抹_記憶頁燒錄(或抹除)不完整的情开^ 可能對儲存裝踩則;㈣辟，舉例制如下： … 1.造成資料的損毀。 优侍原本已 • ;51思縣構的關係(例如：記憶頁對(paired page))，使 在。己隐體中的貝料，因不完整的燒錄(或抹除)動作而損毁。 3· ^於燒錄(錄除)不完整，生潛在何靠的記㈣，使後續血 吊使用該些記憶頁。 …、 4· 〇里貝料紐，造成储存裝置無法正常繼續工作。 201123207 因此，如何解相電顧常㈣ 戸旦m 、隹而担山〆 平知注°己隐體錯存裝置所造成的不 良〜響，進而k出當非揮發性記憶體儲 * μ 1剌常情況時的較佳 處理機制，為一亟待解決的議題。 f發明内容】 有鑑於此本發明提出一種具電 电座呉吊保蠖的儲存裝置及其 =本Γ月所提出的裝置或方法，可克服《異常對非揮發性記憶體儲存 、置知成的不良鱗’飾提高細縣置的可靠卢。 本發明提㈣麵異常保護的儲編包含 二 ^ 賴·70。雜發性記Μ用靖存資料。 控制單元耦接非揮發性記憶體， 、 躲非揮發性記憶體。電源供應單元接收 外^卩電壓，依據外部電壓描 k供工作龍讀揮發性記鐘與控制單元。電 源偵測單摘接控制單元 ，〜 貞料。卩電壓，當外部電壓低於醜值時，傳 达通知信號至控制單元，使控制單元停止存取非揮發性記憶體。 本發明亦提出-種儲存裝置之操作方法，其中儲存裝 ’記㈣與控鄉元，鱗作料^ 雷厭… 付法包含下列步驟：接收外部電壓；依據外部 電壓’提供工作電壓予韭 卞非揮發性記憶體與控制單元；_外部電壓；當外 部電壓低於門檻值時，傳 知仏號至控制單元，使控制單元停止存取非 揮發性記憶體。 有關本發明的較佳實 請渐其触，兹配合圖式說明如后。 【實施方式】 請參照第1圖，令岡_ A 圖所不為具電壓異常保護的儲存裝置之-實施例示 思圖。本發明所提出之儲 置1包含：非揮發性記憶體10、控制單元20' 201123207 電源供應單元30及電源偵測單元4〇。 的控制單元2〇 儲存裝置】可連接於外部主機，如：電腦系統(圖中未示），用以接收外 部主機傳送的指令或資料，再透過輕接於非揮發性記憶體 而存取非揮發性記憶體10。 電源供應單元3〇接收外部電壓，依據外部電壓提供工作電•予非揮 可包含電壓轉換電 發性記憶體丨〇餅鮮元2G。射，魏供料元Μ °201123207 VI. Description of the Invention: [Technical Field] The present invention relates to a storage device and an operation method thereof, and more particularly to a storage device with voltage abnormality protection and an operation method thereof. [Prior Art] Non-volatile memory, the name of the age-known data* will disappear with the memory of the power supply. The flash memory is - commonly used _ volatile memory, flash memory has power saving, shockproof and The advantages of fast access speed and the like are thus widely taken into account in the storage unit of the electronic device, replacing part of the conventional hard disk. The non-volatile fiber storage device touches the external button, and the material portion is charged to the working voltage required by the county storage device to provide normal operation of the storage device. The controller in the storage shelf is configured to receive an instruction transmitted by the host connected to the storage device, and then transmit a related control command to the storage device according to the instruction, so that the related information required by the host is accessed by the storage device. When the storage device is located, _ _ _ _ _ _ (4) for example: power off, at this time will produce a burning (or wipe _ memory page burning (or erase) incomplete situation ^ may be stored on the step (4) Pioneer, the example system is as follows: ... 1. The damage caused by the data. The original service has been • ; 51 the relationship between the county (for example: the paired page), so that the bedding in the hidden body Due to incomplete burning (or erasing) action, it is destroyed. 3· ^Incomplete burning (recording), the potential of what to rely on (four), so that the follow-up blood hanging use these memory pages. ..., 4 · 〇里贝料, the storage device can not continue to work normally. 201123207 Therefore, how to solve the problem of electricity (4) 戸 m m 隹 隹 担 担 担 担 担 担 担 ° ° ° ° ° 己 己 己 己 己 己 己 己 己 己 己 己 己 己Furthermore, the better processing mechanism when the non-volatile memory is stored in the normal case is a problem to be solved. f. In view of the present invention, the present invention proposes an electric electric seat hoisting protection. Storage device and its device or method proposed by this month can overcome "abnormal storage of non-volatile memory" The poor scales that are known to be improved are used to improve the reliability of the county. The storage of the (4) surface anomaly protection of the present invention includes two Lai·70. The miscellaneous records are used for the storage of the data. The control unit is coupled to the non-volatile Sexual memory, and non-volatile memory. The power supply unit receives the external voltage, and reads the volatile clock and control unit according to the external voltage. The power detection single pick-up control unit, ~卩 voltage, when the external voltage is lower than the ugly value, the notification signal is sent to the control unit, so that the control unit stops accessing the non-volatile memory. The invention also proposes a method for operating the storage device, wherein the storage device (4) with the control of the township, scales made of materials ^ Lei ...... The method includes the following steps: receiving external voltage; providing operating voltage to the non-volatile memory and control unit according to the external voltage; _ external voltage; when the external voltage is lower than When the threshold value is reached, the nickname is transmitted to the control unit, so that the control unit stops accessing the non-volatile memory. For the preferred embodiment of the present invention, please refer to the following description. For the first embodiment, please refer to the embodiment of the storage device with voltage abnormality protection. The storage 1 proposed by the present invention includes: non-volatile memory 10, control unit 20 '201123207 Power supply unit 30 and power detection unit 4〇. The control unit 2〇 storage device】 can be connected to an external host, such as a computer system (not shown), for receiving instructions or data transmitted by an external host. The non-volatile memory 10 is accessed by being lightly connected to the non-volatile memory. The power supply unit 3 receives external voltage and provides operating power according to an external voltage. Cake fresh yuan 2G. Shooting, Wei feeding yuan Μ °
路及/或龍《電路，當鶴顧 μ 债仪Ν丨電蜃，—實施例為5 伙特，可触錢雛如DQ無祕，再經_魏喊供一穩定 10能 的工作籠，-實施例為3.3伏特，使控制單元2〇與非揮發性記憶體 正常工作。 一 電源偵測單元40可設於外邮f厭& + 與電源供應單元30之間，且電性遠 =槪Μ。她娜蝴_峨_聰值時，電源 備測早心G即__至控鮮元2(w_單元Μ停止工作。並 2通知親可為控制單元重置(Res啦號或咖忙雜喻號，使控 HU0 =存取轉發性記憶體a。於此，重置域或忙碌信號使 & T止存取非揮發性記«僅為實施例之說明，不為本案之限 =Γ技術領者可料了__其他方式使控制單元別亭止存取 非揮發性記憶體〗〇。 陣列示可知，轉發性記憶體ιό可包含：緩_丨2及記憶胞 。非揮發性記憶體丨G可依據控鮮元20於接㈣知信號之 :^的最後—筆指令，而完成對應該指令的動作，例如：燒錄資料或 ❹料㈣«輸啦明’也纖即·輸低於瞧，Road and / or dragon "circuit, when the crane Gu μ debt Ν丨 Ν丨 — — — — 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施- The embodiment is 3.3 volts, allowing the control unit 2 to operate normally with non-volatile memory. A power detecting unit 40 can be disposed between the external mail and the power supply unit 30, and is electrically farther than 槪Μ. When she is _ _ _ _ value, the power supply is measured early heart G is __ to control fresh element 2 (w_ unit Μ stop working. And 2 notice pro can be reset for the control unit (Res 啦 or coffee busy Yu, let HU0 = access to forward memory a. Here, reset the domain or busy signal to make & T stop access non-volatile record « is only the description of the embodiment, not the limit of this case =Γ The technical leader can expect __ other ways to make the control unit block access to non-volatile memory. Array shows that the forward memory ιό can include: 丨 丨 2 and memory cells. Non-volatile memory The body 可G can complete the action corresponding to the command according to the last-pen command of the control unit 20: (4), for example: burning data or dip (four) Below 瞧,
LSI 5 201123207 非揮發性記憶體】G仍可繼翁已暫存於緩齡12巾㈣料燒制記憶胞 陣歹|Π4中，而完成最後一筆資料的燒錄，由於控制單元2〇已停止存取非 揮發性記憶體10，故於最後一筆資料燒錄完成之後，非揮發性記憶體1〇不 會再接收資料燒錄指令，便不會進行資料燒錄的動作。LSI 5 201123207 Non-volatile memory] G can still be temporarily stored in the slow-age 12 towel (four) material burning memory cell array | Π 4, and the final data is burned, because the control unit 2 〇 has stopped After accessing the non-volatile memory 10, after the last data is burned, the non-volatile memory 1 will no longer receive the data burning command, and the data burning operation will not be performed.
請參照第2圖為儲存裝置之操作時序示意圖。當外部電壓發生異常， 例如：斷電的情況(如财@所示）’電壓_單元如會_到外部電她 設為5观射降’由於電祕應單元3G具碰魏故此時供應給非揮 發性記舰1G的輕仍可正轉持在工作電雜設為3別）。當外部電壓 從w下降和檻值(Vth)，例如w，電壓_單元⑽便會傳送通知信號至 控制單it 20，使控制單元2G停止存取非揮發性記憶體。 當控制單元2〇停止對非揮發性記憶體1〇執行存取工作時(如圖中⑧所 不，於此Μ通知信號為控制單元重置信號），提供給非揮發性記憶體 的，作龍仍維持3.3V。接著外部電麟續下降，直到電源供應單％元的 «功月匕已無法維持正常工作’使提供至非揮發性記憶體川之工作電麼開 始下降(如圖中©所示）。然而，雖提供至非揮發性記憶㈣之卫作電_ 始下降，但右：L作電壓可滿足非揮發性記憶體⑺所需的最低工作電墨需 求’則非揮發性記憶體1〇仍可繼續内部之動作。 底下以資料燒錄為例作說明，但不以此為限(類似的例子如：資料抹除 问樣可適用）。在控制單元2〇停止對非揮發性記憶體_亍存取工作之前， 若非揮發性記憶體1G已接收f料燒錄指令(__ng)，聰軍發性記憶 體10會在電壓下降至非揮發性記憶體1〇最低之 二將 F 电仏 vmem〇ry mi,，刖，將 緩衝器12的㈣燒錄至記憶胞陣列丨4。如第2圖所示，外部電塵 201123207 由門檻值vth開始下降至非揮發性記憶體10的最低工作電壓v_—n的時 間(tRESET)，足夠讓非揮發性記憶體10中緩衝器12所暫存的資料燒錄到記 憶胞陣列14。換句話說，外部電壓由門播值％降至的時間 (tR㈣）’係大於非揮記憶體10資料燒錄的時間(t_)，故非揮發性記 憶體ίο可將已完成接收的資料，完整的燒錄至記憶胞陣列i41，而完成 最後一筆指令所對應的動作。 請參照第3圖為儲存裝置之操作方法流關。偵測外部電壓(步驟 • sio)，判斷外部電壓是否小於門檻值(步驟S2〇)。若外部電壓沒有小於門捏 值，則回到步驟S10繼續偵測。若發生外部電壓異常的情況，使得外部電 壓便被_到小於門健時，可透過傳送通知錄至㈣單元，用以使控 】單元ίτ止存取非揮發性^己憶體(步驟s3〇)，此時可在外部電壓降低至非揮 發性記㈣最低1作電叙前’、輯完鱗·性記憶配概的最後一 筆指令所對應的動作。 • 本發明所稱之非揮發性記憶體可為快閃記憶體(FlashMemory)、相變化 記憶體(Phase Change Mem〇iy，㈣）、鐵電隨機存取記憶體(謹叫、磁 阻記憶體(MRAM)等。 再者’本發明所提出之控制單元3〇可為單-顆控制晶片。此外，考量 成本或製程等因素，電源供應單元30與電源偵測單元40兩者至少其中之 —可與控鮮元3G封裝於同—顆控制晶片之令。 ^ “的技術内谷已經以較佳實施例揭露如上然其並非用以限 疋本發明’任何孰習丨卜姑溢土 '”、 π者，在不脫離本發明之精神所作些許之更動與 s應涵錢本伽的料内，因此本發明之保護綱當視後附之申 201123207 請專利範圍所界定者為準。 【圖式簡單說明】 第1圖：具電壓異常保護的儲存裝置之一實施例示意圖 第2圖：儲存裝置之操作時序示意圖 第3圖：儲存裝置之操作方法流程圖 【主要元件符號說明】 1 :儲存裝置 • 10:非揮發性記憶體 12 :緩衝器 14 :記憶胞陣列 20 :控制單元 30 :電源供應單元 40 :電源偵測單元Please refer to FIG. 2 for a schematic diagram of the operation timing of the storage device. When the external voltage is abnormal, for example, the case of power failure (as indicated by Cai @), the voltage_unit will be _ to the external power, she is set to 5 observation drop, because the battery should be supplied to the unit 3G. The lightness of the non-volatile record ship 1G can still be reversed and the work power is set to 3). When the external voltage drops from w and the value (Vth), for example w, the voltage_unit (10) transmits a notification signal to the control unit it 20, causing the control unit 2G to stop accessing the non-volatile memory. When the control unit 2 stops performing the access operation on the non-volatile memory 1 (as shown in FIG. 8 and the notification signal is the control unit reset signal), it is supplied to the non-volatile memory. The dragon still maintains 3.3V. Then, the external power supply continues to drop until the power supply single element of the «power month has been unable to maintain normal operation" so that the work power supplied to the non-volatile memory starts to drop (as shown in ©). However, although the supply to the non-volatile memory (four) is reduced, but the right: L is the voltage to meet the minimum working ink demand required for the non-volatile memory (7) 'non-volatile memory 1〇 Can continue the internal action. The following is an example of data burning, but it is not limited to this (similar examples such as: data erasure can be applied). Before the control unit 2 stops the access to the non-volatile memory _亍, if the non-volatile memory 1G has received the f-burn command (__ng), the Cong military memory 10 will drop to a non-volatile voltage. The lowest memory of the memory 1 将 F me me me me me me mi mi 。 。 。 。 。 。 。 。 。 。 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器 缓冲器As shown in FIG. 2, the external electric dust 201123207 is reduced from the threshold value vth to the minimum operating voltage v_-n of the non-volatile memory 10 (tRESET), which is sufficient for the buffer 12 in the non-volatile memory 10. The temporarily stored data is burned to the memory cell array 14. In other words, the time when the external voltage is reduced by the gated value % (tR(4))' is greater than the time (t_) of the non-volatile memory 10 data burning, so the non-volatile memory ίο can complete the received data, Completely burn to the memory cell array i41, and complete the action corresponding to the last instruction. Please refer to Figure 3 for the operation method of the storage device. The external voltage is detected (step • sio) to determine if the external voltage is less than the threshold (step S2〇). If the external voltage is not less than the gate pinch value, then return to step S10 to continue the detection. If an external voltage abnormality occurs, so that the external voltage is _ to less than the gate, it can be recorded to the (4) unit through the transmission notification, so that the control unit ίτ can access the non-volatile memory (step s3〇). At this time, the external voltage can be reduced to the lowest value of the non-volatile record (four), and the action corresponding to the last instruction of the scale and sex memory can be completed. • The non-volatile memory referred to in the present invention may be a flash memory (Flash Memory), a phase change memory (Phase Change Mem〇iy, (4)), a ferroelectric random access memory (scream, magnetoresistive memory). (MRAM), etc. Further, the control unit 3〇 proposed by the present invention may be a single-control chip. Further, in consideration of factors such as cost or process, at least one of the power supply unit 30 and the power detecting unit 40 may be- It can be packaged with the control unit 3G in the same control chip. ^ "The technical valley has been disclosed in the preferred embodiment as above is not intended to limit the invention 'any 丨 丨 姑 溢 溢 overflow'' π, those who do not deviate from the spirit of the present invention and s should be included in the material of the gamma, so the protection of the present invention is attached as defined in the scope of the patent application 201123207. Brief description of the model: Figure 1: Schematic diagram of one embodiment of a storage device with voltage abnormal protection. Figure 2: Schematic diagram of the operation timing of the storage device. Figure 3: Flow chart of the operation method of the storage device [Description of main components] 1 : Storage Device • 10: Volatile memory 12: buffer 14: Memory cell array 20: control unit 30: power supply unit 40: power detection means