TW201122482A - Out-of plane accelerometer - Google Patents

Out-of plane accelerometer Download PDF

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TW201122482A
TW201122482A TW98146136A TW98146136A TW201122482A TW 201122482 A TW201122482 A TW 201122482A TW 98146136 A TW98146136 A TW 98146136A TW 98146136 A TW98146136 A TW 98146136A TW 201122482 A TW201122482 A TW 201122482A
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Taiwan
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surface electrode
fingers
finger
accelerometer
micro
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TW98146136A
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Chinese (zh)
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Yu-Hsiang Huang
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Yu-Hsiang Huang
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Priority to TW98146136A priority Critical patent/TW201122482A/en
Publication of TW201122482A publication Critical patent/TW201122482A/en

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Abstract

The disclosure is an out of plane accelerometer, which uses asymmetric proof masses formed first comb electrodes thereon interlaced with second comb electrodes to form differential capacitive accelerometer. When the accelerometer moves up and down, the asymmetric proof masses move in different directions cause the asymmetric structure, then the capacitors gain different capacitance variation from increase and decrease at the same time. The accelerometer then acquires differential capacitive detecting function.

Description

201122482 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種加速度感測器,特別是關於一種出平面微加速度計。 【先前技術】 目前’已有許多應用微機電製程(MEMS)所製作出的電容,其透過電容 值的改變來偵測加速度的方法與架構。電容值的計算公式為c=k£〇A/z,其 中C為電谷,k為絕緣常數;&為介電常數;A為平行板的面積;z為兩平 板間的距離。因此,有兩個參數可改變電容值,分別為A與z。 ® 其中’差動電容式加速度計由於採取一增一減的電容俄測方式,可達 到很好的感度而廣受設計人員的歡迎》由於差動電容式加速度計的偵測架 構’電容量可以是互補的(兩者電容的變化量絕對值相等,僅為一增一減, 也就是Ci=C〇+AC,C2=C〇-AC) ’而在設計上就有非常多的變化。運用差 動電容架構進行感測的好處,在於電容相減的同時可以把部份諧波項消 除’而且環境變化所造成的電容值變化也會被當成共模訊號而被衰減掉, 有助於做信號分析》 ® 差動電容式加速度計的設計,許多都採用指狀電極的設計,以增加電 容的平板電極的面積,進而產生較大的電容變化量,並提高感測訊號的強 度,相對地,雜訊的影響也會縮小;同時,可在縮小MEMS的製作面積, 降低生產成本。 傳統的同平面(in plane)加速度計設計架構,其偵測方式與生產製程屬 於相對成熟的領域。不過’要將出平面(out-of-plane)的微加速度計架構整 合同平面微加速度計的不同架構至同一晶片中,製程上將會變得較為複 201122482 雜。於是,如何能在既有同平面技術成熟基礎上設計出平面的加速度計, 進而能夠降低三維加速度計的整體面積,成為業界競相研究開發的目標。 【發明内容】 本發明提出一種出平面微加速度計,包含有:基板;固定部,形成於 基板上;扭轉部,連接固定部;不對稱部,具有左右兩端並連接於扭轉部, 藉由扭轉部之形變使不對稱部力矩平衡,肖以進行_板式之丨平面之運 動。固定部包含有:複數個左指狀部,每個左指狀部之兩側分別形成有第 •—表面電極與第二表面電極,且左指狀部以垂直方向上下交錯之方式間隔 排列;及複數個右指狀部’每個右指狀部之賴分卿成有第三表面電極 與第四表面電極’且右指狀部以垂直方向上下交錯之方式_排列。不對 稱部包含有·第-可動件’形成於左端,其質量為M1,重心、距離扭轉部之 力臂為L ’並具有複數個帛一指狀部,第一指狀部與左指狀部形成交又排 列’第-指狀部之兩側分別形成有與第一表面電極、第二表面電極分別面 對形成心重#之第五表面電極與第六表面電極而形成第—電容與第二電 _ 容,及第二可動件,形成於右端’其質量為M2並與M1不相等,重心距離 扭轉部之力臂為L ’與第-可動件形成力矩不平衡並具有複數個第二指狀 »P第一指狀部與右指狀部形成交又排列,每個帛二指狀部之兩側分別形 、有與第—表面電極、第四表面電極分別面對形成部分重整之第七表面電 極與第八表面電極而形成第三電容與第四電容。 本發明更提出-種出平面微加速度計,包含有:基板;固定部,形成 =基板上;扭_,連翻不對卿,具有左“端並連接於扭轉 藉由扭轉。卩之職使;j;對辦力矩平衡肖㈣行她喊之出平面 201122482 之運動。其中,固定部包含有:複數個左指狀部,每個左指狀部之兩側分 別形成有第一表面電極與第二表面電極;及複數個右指狀部,每個右指狀 部之兩側分別形成有一第三表面電極與一第四表面電極。不對稱部包含: 第一可動件,形成於不對稱部之左端,其質量為,重心距離扭轉部之力 臂為L,並具有複數個第一指狀部,與左指狀部形成交又排列,且第一指狀 部以垂直方向上下交錯之方式間隔排列,每個第一指狀部之兩側分別形成 有與第一表面電極、第二表面電極分別面對形成部分重疊之第五表面電極 9 與第六表面電極而形成第一電容與第二電容;及第二可動件,形成於不對 稱部之右端,其質量為M2並與M1不相等,重心距離扭轉部之力臂為|_, 與該第一可動件形成力矩不平衡,並具有複數個第二指狀部,第二指狀部 以垂直方向上下交錯之方式間隔排列且與右指狀部形成交又排列,每個第 二指狀部之兩側分別形成有與第三表面電極、第四表面電極分別面對形成 部分重疊之第七表面電極與第八表面電極而形成第三電容與第四電容。 本發明尚提出-種出平面微加速度計,包含有:基板;固定部,形成 鲁於基板上;扭轉部’連接固定部;不對稱部’具有左右兩端並連接於扭轉 部’藉由扭轉部之形變使不對稱部力矩平衡,用以進行翹赵板式之出平面 之運動其中’固疋部包含有.複數個左指狀部,每個左指狀部之兩側分 別瓜成有第表面電極與第一表面電極;及複數個右指狀部,每個右指狀 部之兩側分別形成有第三表面電極與第四表面電極。不對稱部包含:第一 可動件,形成於不對稱部之左端,其質量為M1,重心距離扭轉部之力臂為 並具有複數個帛-指狀部’第—指狀部與左指狀部形成交又排列並形成 上下交錯’每個第一指狀部之兩側分別形成有與第一表㈣極、第二表面⑸ 5 201122482 六另J面對形成部分重叠之第五表面電極與第六表面電極而形成第一電 令與H,及第二可動件,形成於不對稱部之右端,其質量為M2,重 ⑽離扭轉部之力臂為L,與第—可動件形成力料平衡,並具有複數個第 一指狀部’第二指狀部與右指狀部形成交又排列並形成上下交錯,每個第 才曰狀4之兩側分別形成有與第三表面電極第四表面電極分別面對形成 Ρ分重疊之第七表面電極與第八表面電極而形成第三電容與第四電容。201122482 VI. Description of the Invention: [Technical Field] The present invention relates to an acceleration sensor, and more particularly to an out-of-plane micro-accelerometer. [Prior Art] At present, there are many methods and architectures for detecting the acceleration of a capacitor fabricated by a microelectromechanical process (MEMS) through a change in capacitance value. The capacitance value is calculated as c = k 〇 A / z, where C is the electric valley, k is the insulation constant; & is the dielectric constant; A is the area of the parallel plate; z is the distance between the two plates. Therefore, there are two parameters that change the capacitance values, A and Z, respectively. ® Among them, the 'differential capacitive accelerometer can achieve good sensitivity due to the increase and decrease of the capacitance and the Russian method. It is widely welcomed by designers." Due to the differential capacitance accelerometer's detection architecture, the capacitance can be They are complementary (the absolute values of the capacitance changes are equal, only one increase and one decrease, that is, Ci=C〇+AC, C2=C〇-AC)' and there are many changes in the design. The advantage of using the differential capacitor architecture for sensing is that the partial subtraction can be eliminated while the capacitance is subtracted, and the change in capacitance caused by environmental changes is also attenuated as a common mode signal, which helps Do Signal Analysis ® Differential Capacitance Accelerometer design, many of which use the design of finger electrodes to increase the area of the plate electrode of the capacitor, thereby generating a large amount of capacitance change and increasing the intensity of the sensing signal. Ground, the impact of noise will also shrink; at the same time, it can reduce the production area of MEMS and reduce production costs. The traditional in-plane accelerometer design architecture is relatively mature in its detection and production processes. However, to make the out-of-plane micro-accelerometer architecture complete the different architectures of the contract plane micro-accelerometer into the same wafer, the process will become more complicated. Therefore, how to design a planar accelerometer based on the maturity of the same plane technology, and thus reduce the overall area of the three-dimensional accelerometer, has become the target of the industry's competitive research and development. SUMMARY OF THE INVENTION The present invention provides an out-of-plane micro-accelerometer, comprising: a substrate; a fixing portion formed on the substrate; a torsion portion connected to the fixing portion; and an asymmetrical portion having left and right ends and connected to the torsion portion by The deformation of the torsion portion balances the moment of the asymmetrical portion, and the movement of the plane of the plate is performed. The fixing portion includes: a plurality of left fingers, each of which is formed with a first surface electrode and a second surface electrode on both sides thereof, and the left fingers are arranged at intervals in a vertical direction; And a plurality of right fingers "each right finger is divided into a third surface electrode and a fourth surface electrode" and the right fingers are arranged in a vertical direction. The asymmetrical portion includes a ·-movable member ' formed at the left end, the mass of which is M1, the center of gravity and the distance arm of the torsion portion are L ' and has a plurality of first finger portions, the first finger portion and the left finger shape The second surface electrode and the sixth surface electrode, which are formed to face the first surface electrode and the second surface electrode, respectively, form a first surface and a second surface electrode to form a first capacitance and a first surface. The second electric_capacitor and the second movable member are formed at the right end, the mass of which is M2 and is not equal to M1, and the center of gravity of the torsion portion is L' and the first movable member is unbalanced and has a plurality of second The first finger portion of the finger shape and the right finger portion are arranged and arranged, and the two sides of each of the two finger portions are respectively formed and partially deformed to face the first surface electrode and the fourth surface electrode. The seventh surface electrode and the eighth surface electrode form a third capacitor and a fourth capacitor. The invention further proposes to produce a planar micro accelerometer comprising: a substrate; a fixed portion formed on the substrate; a twisted _, which is not aligned, has a left end and is connected to the twist by twisting. j; for the torque balance Xiao (four) line she shouted out of the plane 201122482 movement, wherein the fixed part includes: a plurality of left fingers, each of the left side of the left part of the first surface electrode and the first a second surface electrode; and a plurality of right fingers, each of which has a third surface electrode and a fourth surface electrode respectively formed on both sides of the right finger. The asymmetric portion comprises: a first movable member formed in the asymmetrical portion The left end of the mass is such that the center of gravity of the torsion portion is L, and has a plurality of first fingers, which are arranged and arranged with the left fingers, and the first fingers are vertically and vertically staggered. Arranged at intervals, each of the first finger portions is formed with a fifth surface electrode 9 and a sixth surface electrode that face the first surface electrode and the second surface electrode, respectively, to form a first capacitance and a first surface Two capacitors; and second The moving member is formed at the right end of the asymmetrical portion, the mass of which is M2 and is not equal to M1, and the force arm of the center of gravity from the torsion portion is |_, forming a moment imbalance with the first movable member, and having a plurality of second fingers a second portion of the second finger portion and the fourth surface are respectively formed on the two sides of the second finger portion. The electrodes respectively face the partially overlapping seventh surface electrode and the eighth surface electrode to form a third capacitor and a fourth capacitor. The present invention also proposes to produce a planar micro accelerometer, comprising: a substrate; a fixing portion, forming a On the substrate; the torsion portion is connected to the fixing portion; the asymmetrical portion has the left and right ends and is connected to the torsion portion. The deformation of the asymmetrical portion is balanced by the deformation of the torsion portion for performing the motion of the plane out of the plane. The solid body portion includes a plurality of left finger portions, each of which has a first surface electrode and a first surface electrode, and a plurality of right finger portions, each of the right finger portions Both sides are formed separately a third surface electrode and a fourth surface electrode. The asymmetrical portion comprises: a first movable member formed at a left end of the asymmetric portion, the mass of which is M1, and a center of gravity of the torsion portion is a plurality of 帛-finger portions 'The first finger and the left finger are formed and arranged and formed up and down. The two sides of each first finger are respectively formed with the first table (four) pole and the second surface (5) 5 201122482 Forming a first electrical order and H for forming the partially overlapped fifth surface electrode and the sixth surface electrode, and forming a second actuator, the second movable member is formed at the right end of the asymmetrical portion, the mass of which is M2, and the weight (10) from the torsion portion L is balanced with the first movable member, and has a plurality of first fingers. The second finger portion and the right finger portion are formed and arranged to form an upper and lower stagger, and each of the first fingers is shaped. The third surface electrode and the fourth surface electrode are formed on the two sides to form a third surface electrode and a fourth surface electrode, respectively, which face the fourth surface electrode and the fourth surface electrode are formed to overlap each other to form a third capacitance and a fourth capacitance.

為讓本發明之上述和其他目的特徵和優點能更明顯易懂下文特 Μ個較&amp;實_ ’並配合所附圖式,作詳細說明如下: 【實施方式】 本發明係運用不平衡可動件的概念,藉由其扭轉角度與重力加速度成 正比來設計出平面微加速度計。其中,指狀觸設計,採取上下交錯的方 式來設計’亦即,不平衡可動件的触部以及@定部的指狀之間的相對位 置’採取_LT交錯的方絲制,藉鄉成差動式電容彳貞測架構。 首先’請參考第1A圖,其為本發明之出平面微加速度計1〇〇第一具體 實施例,其為一樣態,其包含有:基板1〇1(纷於第2A圖之後)、固定部11〇、 扭轉部120、不對稱部之左質量塊130與右質量塊14〇,以及連接臂15〇。 各部之間的關係說明如下:固定部11〇形成於基板上,其上形成有複數個 左指狀部111/112與右指狀部113/114。每個左指狀部Π1/Π2之兩側分別 形成有第一表面電極與第二表面電極,且左指狀部以垂直方向上下交錯之 方式間隔排列,亦即’左指狀部111與左指狀部112形成上下交錯排列, 其具體排列方式將說明於後。每個右指狀部Π3/114之兩側分別形成有第 二表面電極與第四表面電極’且該些右指狀部以垂直方向上下交錯之方式 201122482 間隔排列,亦即,右指狀部113與右指狀部114形成上下交錯排列,其具 體排列方式將說明於後。扭轉部12Q連接固定部m及不對稱部。 不對稱部具有左右兩端並連接於扭轉部12〇,藉由扭轉部12〇之形變 使不對稱部之左右_力矩平衡,肋進行她板式之出平面之運動包 含:左質量塊伽’形成於不對稱部之左端,其質量為州,重心距離扭轉 P之力臂為L並具有複數個指狀部131,每個指狀部⑶之兩側分 別形成有與第-表面電極、第二表面電齡別賴形成部分重紅第五表The above and other objects, features and advantages of the present invention will become more apparent and understood from the following description of the <RTIgt; The concept of a piece, by which the torsion angle is proportional to the acceleration of gravity, designs a planar micro accelerometer. Among them, the finger-touch design adopts the up-and-down staggered design to design 'that is, the relative position between the contact portion of the unbalanced movable member and the finger of the @ fixed portion' adopts the _LT interlaced square wire system, Differential capacitance measurement architecture. First, please refer to FIG. 1A, which is a first embodiment of the planar micro-accelerometer 1 of the present invention, which is in the same state, and includes: a substrate 1〇1 (after the second FIG. 2A), and a fixed The portion 11〇, the torsion portion 120, the left mass 130 and the right mass 14〇 of the asymmetrical portion, and the connecting arm 15〇. The relationship between the parts is explained as follows: The fixing portion 11 is formed on the substrate, and a plurality of left fingers 111/112 and right fingers 113/114 are formed thereon. A first surface electrode and a second surface electrode are respectively formed on both sides of each of the left finger Π 1 / Π 2, and the left fingers are arranged in a vertical manner in a vertical direction, that is, 'left finger 111 and left The fingers 112 are arranged in a staggered arrangement, the specific arrangement of which will be described later. A second surface electrode and a fourth surface electrode ' are respectively formed on two sides of each of the right finger Π 3/114, and the right fingers are arranged in a vertical direction and vertically staggered in a manner of 201122482, that is, the right knuckle 113 and the right finger portion 114 are formed in a staggered arrangement, and the specific arrangement thereof will be described later. The torsion portion 12Q connects the fixing portion m and the asymmetrical portion. The asymmetrical portion has left and right ends and is connected to the torsion portion 12A. The deformation of the torsion portion 12〇 causes the left and right _ moments of the asymmetrical portion to be balanced, and the movement of the rib to the plane of the plane of the plate includes: forming a left mass gamma At the left end of the asymmetrical portion, the mass is state, the center of gravity of the center of gravity twisting P is L and has a plurality of fingers 131, and the sides of each finger (3) are respectively formed with the first surface electrode and the second Surface electric age is not to form part of the red table 5

面電極與第六表面電極,指狀部131與左指狀部111/112形成交叉排列而 形成第-電容與第二電容;及右質量塊14Q,形成於不對稱部之右端,其 質量為M2並與M1不相等,重心距離扭轉部12〇之力臂為l,與左質量塊 130形成力矩不平衡,並具有複數個指狀部141,每個指狀部141之兩側 分別形成有與第三表面電極、第四表面電極分別面對形成部分重昼之第七 表面電極與第八表面電極,指狀部141與右指狀部·14形成交叉排列 而形成第三電容與第四電容。 連接臂150則為連接左質量塊13〇與扭轉部12〇以及右質量塊與扭轉 部120之部份。 ,其中,左指狀部_列方式,係可為上下交錯之方式間隔排 、採取上下、上、下之交錯方式排列,兹說明於第2A、2B圖。 在第1A目令,左指狀部渭112所指涉的是在_成於左質量塊13〇 狀邛131而形成的交又結構,其為此種交又結構的一種樣態。其 中,指狀部⑶除了形成於左#量塊13〇的左側外,亦可形成於其上側或 下側’或者’只形成於上側或下側而不形成於左側。亦即,左指狀部111/112 7 201122482 夂 並非僅指涉左側之實體’而為與左質量塊130之指狀部131交又的指狀結 構。 例如’第1B圖中,出平面微加速度計·彳所包含的基本結構與第 1A圖中的出平面微加速度計1〇〇相同其差別在於於左質量塊1加與右 質量塊140的上側/下側增加指狀部131與指狀部141,並增加左指狀部 111AI12與右指狀部ιι3/114。 第1C圖則為另一種樣態,出平面微加速度計100-2所包含的基本結構 • 與第1A圖中的出平面微加速度計1〇〇相同,其差別在於,於左質量塊130 、質量塊140的指狀部131與指狀部141設置於上側與下側,同樣地, 左心狀》p 111/112與右指狀部113/114亦設置於上側與下側並分別與指狀 部131、指狀部交叉設置。 請參考第2A圖’其為本發明第一具體實施例之第一例中,沿八一a軸 線之剖面圖,其說明了左指狀部111a與112a與右指狀部ma與ma採 取上下交錯的排列方式而分別與左質量塊13〇上的指狀部以及右質 • #塊141a軸u《錯制的情形。 在匕實施例中’左指狀部111a的第一表面電極與指狀部⑶a的第五 表面電極形成部分電極重昼而構成第一電容,左指狀部H2a的第二表面電 極與指狀部131a的第六表面電極形娜分電極重疊而構成第二電容。同樣 右和狀《卩113a的第三表面電極與指狀部彳作的第七表面電極形成部 分電極重叠而構成第三電容,右指狀部⑽的第四表面電極與指狀部 、第表面電極形成部分電極重叠而構成第四電卜在财之初,第一電 '、 電谷第一電容與第四電容的電容量約略相等。不過,當發生出 8 .201122482 平面運動時’由於原先由扭轉部12G所產生的形變⑽原來的力矩不平衡 變為力矩平衡雜態被打破,因此,會造成不平衡部的左f魏13〇與右 質量塊14G職翹翹板式的上下運動。如此的運動,將導妙—電容與第 二電容的電容量-增-減,且第三電容與第四電容的電容量—增一減,進 而可構成差動式的加速度計偵測結構βThe surface electrode and the sixth surface electrode, the fingers 131 and the left fingers 111/112 are arranged in a crosswise arrangement to form a first capacitor and a second capacitor; and the right mass 14Q is formed at the right end of the asymmetrical portion, the mass of which is M2 is not equal to M1, and the center of gravity of the torsion portion 12〇 is 1 , which forms a moment imbalance with the left mass 130, and has a plurality of fingers 141, and the sides of each of the fingers 141 are respectively formed with The third surface electrode and the fourth surface electrode face the seventh surface electrode and the eighth surface electrode, respectively, and the finger portion 141 and the right finger portion 14 are arranged to form a third capacitance and a fourth capacitance. capacitance. The connecting arm 150 is a portion that connects the left mass 13 〇 with the torsion 12 〇 and the right mass and the torsion 120. The left-finger-column method may be arranged in a staggered manner in an up-and-down manner, and arranged in an interlaced manner of up, down, up, and down, as illustrated in FIGS. 2A and 2B. In the 1st AA command, the left finger 渭 112 refers to a cross-structure formed by forming a 质量-shaped 邛 131 in the left mass 13 , which is a form of such a cross-structure. Here, the finger portion (3) may be formed on the upper side or the lower side 'or on the left side of the left # gauge block 13', or may be formed only on the upper side or the lower side and not on the left side. That is, the left finger 111/112 7 201122482 并非 does not refer only to the entity on the left side but is a finger structure that intersects the finger 131 of the left mass 130. For example, in FIG. 1B, the basic structure included in the out-of-plane micro-accelerometer is the same as the out-of-plane micro-accelerometer in FIG. 1A, and the difference is that the left mass 1 is added to the upper side of the right mass 140. / The lower side increases the finger 131 and the finger 141, and increases the left finger 111AI12 and the right finger ιι3/114. The 1C figure is another form, and the basic structure included in the out-of-plane micro-accelerometer 100-2 is the same as the out-of-plane micro-accelerometer 1〇〇 in Figure 1A, with the difference being that the left-hand mass 130, The finger 131 and the finger 141 of the mass 140 are disposed on the upper side and the lower side. Similarly, the left heart shape p 111/112 and the right finger 113/114 are also disposed on the upper side and the lower side, respectively. The shape 131 and the fingers are arranged to intersect each other. Please refer to FIG. 2A, which is a cross-sectional view along the axis of Baya a in the first example of the first embodiment of the present invention, which illustrates that the left fingers 111a and 112a and the right fingers ma and ma are taken up and down. The staggered arrangement is the same as the finger on the left mass 13 以及 and the right • • #块141a axis u. In the 匕 embodiment, the first surface electrode of the left finger portion 111a and the fifth surface electrode of the finger portion (3) a form a partial electrode to form a first capacitance, and the second surface electrode of the left finger portion H2a and the finger shape The sixth surface electrode of the portion 131a is overlapped to form a second capacitance. Similarly, the right surface and the third surface electrode of the crucible 113a overlap with the seventh surface electrode forming partial electrode of the finger portion to constitute a third capacitance, and the fourth surface electrode of the right finger portion (10) and the finger portion and the first surface The electrode forming portion electrodes overlap to form a fourth electric power. At the beginning of the financial period, the first electric power, the first capacitance of the electric valley and the fourth capacitance have approximately the same capacitance. However, when the plane motion of 8.201122482 occurs, 'the original torque imbalance caused by the deformation of the torsion portion 12G (10) is changed to the moment balance miscellaneous state, and thus the left balance of the unbalanced portion is caused. With the right mass 14G job, the seesaw type up and down movement. Such a motion will increase the capacitance of the capacitor and the second capacitor - increase and decrease, and increase or decrease the capacitance of the third capacitor and the fourth capacitor to form a differential accelerometer detection structure β.

在實際的設計上,左指狀部川a/1i2a與右指狀部ma/114a的排列 方式’亦可採取上上、下下之交錯方式排列^其他的上下交錯方式亦可 採行,例如,上、下、上、下、上、上、下、下等等。只要能達到第一電 容與第二電容,第三電容與第四電容等量的電容量分配即可。 第2B圖係為本發明第一具體實施例中之第一例令,沿^日軸線之剖 面圖,其提供了左指狀部111a與112a採取上、下、上、下之交錯方式排 列。而指狀部131a為平行排列並穿插於左指狀部111a與112a之間。 本發明可互補式錄半導體(CMOSm程來製作電極,以達到降低 成本的目的’如前所述之第—表面電極、第二表面電極、第三表面電極、 第四表面電極、第五表面電極、第六表面電極、第七表面電極與第八表面 電極均可以CMOS製程形成。以下,將以第3A、3β圖說明之。 請參考第3Α圖,其為本發明第一具體實施例之第二例中,沿八_一八軸 線之剖面圖,採用CMOS製程,概念上的整片電極將會形成多層電極的形 態。左指狀部111b/112b、右指狀部113b/114b、指狀部131b與指狀部14化 均為多層電極結構。同樣地,左指狀部111b/112b以及右指狀部ii3b/ii4b 均以上、下 '上、下交錯方式排列,與第2A圖者相同,不再贅述。 [S] 接著請參考第3B圖,其為本發明第一具體實施例中之第二例中沿 9 201122482 B-B轴線之剖面圖’其為採用CM〇s製程並具有六層金屬層(M1, M2, M3, M4, M5, M6)的結構示範例❶藉由CM0S製程所形成的電極,讓左指狀部 111b與指狀部131b具有重疊的電極而形成第一電容,且左指狀部彳^匕與 指狀部131b具有重昼的電極而形成第二電容。當發生左質量塊13〇之上 下運動時,第一電容與第二電容將發生一增一減的情形。 第1、2A、2B、3A、3B圖所示者為左指狀部與右指狀部採取上下交 錯的排?!方式者。另-種實施例為在質量塊上的指狀部採取上下交錯的排 # 列方式者,以下將舉數個實施例於第4、5A、5B、6A、6B圖。 第4圖係為本發明之出平面微加速度計第二具體實施例,其基本結構 同於第1圖’差別在於’位於左質量塊13〇的指狀部132/133與位於右質 量塊140的指狀部期43採取上下交錯的排列方式,餘糊定部的左 指狀部115與右指狀部116則採取平行排列的方式。 接著,請參考第5A圖,其為本發明第二具雜實施例之第一例中,沿 軸線之面圖’其說明了指狀部】32a與133a與指狀部142a與143a _練上下交錯的排列方式而分別與左指狀部115a以及右指狀部⑽形成 上下交錯排列的情形。 第5B圖係為本發明第二具體實施例中之第一例中,沿μ軸線之剖 面圖’其說明了指狀部132a與133a採取上、下、上、下之交錯方式排列。 而左指狀部115a為平行排列並穿插於指狀部咖與伽之間。 第6A圖係為本發明第二具體實施例之第二例中沿a—a轴線之剖面 圖,其採謂OS製程,嫩繼電極將會形成多層電極的形態。左 指狀部⑽、右指狀部⑽、指狀部咖咖與指狀部麵伽均 10 201122482 為多層電極結構。同樣地,左指狀部115b以及右指狀部116b均以上、下、 上、下交錯方式排列’與第5A圖者相同,不再贅述》 第6B圖係為本發明第二具體實施例中之第二例中’沿軸線之剖 面圖,其為採用CMOS製程並具有六層金屬層(Μ1, M2, M3, Μ4, Μ5, Μ句In actual design, the arrangement of the left finger chuan a/1i2a and the right finger ma/114a can also be arranged in an up-and-down manner, and other up-and-down interleaving methods can also be adopted, for example , up, down, up, down, up, up, down, down, etc. As long as the first capacitance and the second capacitance can be achieved, the third capacitance and the fourth capacitance are equally distributed. Fig. 2B is a cross-sectional view along the line of the first example of the first embodiment of the present invention, which provides the arrangement of the left and right fingers 111a and 112a in an alternating manner of up, down, up and down. The fingers 131a are arranged in parallel and interspersed between the left fingers 111a and 112a. The invention can complement the recorded semiconductor (CMOS circuit to fabricate the electrode for the purpose of reducing cost) as described above - the surface electrode, the second surface electrode, the third surface electrode, the fourth surface electrode, the fifth surface electrode The sixth surface electrode, the seventh surface electrode, and the eighth surface electrode may each be formed by a CMOS process. Hereinafter, the third embodiment will be described with reference to FIGS. 3A and 3β. Referring to FIG. 3, it is the first embodiment of the present invention. In the two cases, the cross-sectional view along the eight-eight-eight axis is CMOS, and the conceptual whole-piece electrode will form the multilayer electrode. Left finger 111b/112b, right finger 113b/114b, finger The portion 131b and the finger portion 14 are both multi-layer electrode structures. Similarly, the left finger portion 111b/112b and the right finger portion ii3b/ii4b are arranged in a top-bottom and a lower-upper and lower-order manner, and are the same as those in the second A-picture. [S] Next, please refer to FIG. 3B, which is a cross-sectional view along the BB axis of 9 201122482 in the second example of the first embodiment of the present invention, which is a process using CM〇s and has six Structural demonstration of layer metal layers (M1, M2, M3, M4, M5, M6) For example, by the electrode formed by the CMOS process, the left finger portion 111b and the finger portion 131b have overlapping electrodes to form a first capacitance, and the left finger portion and the finger portion 131b have a double electrode. The second capacitor is formed. When the left mass 13 〇 moves up and down, the first capacitor and the second capacitor will increase and decrease. The first, second, second, third, and third views are left. The finger portion and the right finger portion are arranged in an up-and-down manner. The other embodiment is a method in which the fingers on the mass block are arranged in an up-and-down staggered manner, and several embodiments will be described below. 4, 5A, 5B, 6A, 6B. Fig. 4 is a second embodiment of the planar microaccelerometer of the present invention, the basic structure of which is the same as that of Fig. 1 'is located at the left mass 13〇 The finger portions 132/133 and the finger portion 43 located in the right mass 140 are arranged in an up-and-down manner, and the left finger portion 115 and the right finger portion 116 of the remaining paste portion are arranged in parallel. Please refer to FIG. 5A, which is a plan view along the axis in the first example of the second embodiment of the present invention. It is described that the finger portions 32a and 133a and the finger portions 142a and 143a are arranged in an up-and-down manner, and the left finger portion 115a and the right finger portion (10) are alternately arranged in a vertical arrangement. In the first example of the second embodiment of the present invention, the cross-sectional view along the μ axis describes that the fingers 132a and 133a are arranged in an alternating manner of up, down, up, and down. The left finger 115a is Parallelly arranged and interspersed between the fingers and the gamma. Fig. 6A is a cross-sectional view along the a-a axis in the second example of the second embodiment of the present invention, which is referred to as the OS process, and the tender electrode The morphology of the multilayer electrode will be formed. The left finger (10), the right finger (10), the finger coffee and the finger surface gamma 10 201122482 are multilayer electrode structures. Similarly, the left and right fingers 115b and 116b are arranged in a staggered manner in the upper, lower, upper, and lower directions, which are the same as those in the fifth embodiment, and are not described again. FIG. 6B is a second embodiment of the present invention. In the second example, a cross-sectional view along the axis, which is a CMOS process and has six metal layers (Μ1, M2, M3, Μ4, Μ5, haiku)

的結構示範例。藉由CMOS製程所形成的電極,讓左指狀部115b與指狀 部132b具有重疊的電極而形成第一電容,且左指狀部115b與指狀部杞北 具有重叠的電極而形成第二電容。當發生左質量塊13G之上下運動時,第 電谷與第一電容將發生一增一減的情形。 除了在左指狀部/右指狀部或者質量塊上的指狀部採取上下交錯的排列 方式外,亦可採取兩者都平行排列,但左指狀部,左質量塊的指狀部,右指 狀部/右質量塊的指狀部形成上下交錯的排列方式。如此將可形成第一電 容/第三電容’第二電容/第四電容形成—增—_方式,亦可達到差動電容 式加速度計的設計目的。以下,將舉數個實施例說明之。 請參考第7圖,其為本發明之出平面微加速度計第三具體實施例,^ 基本結構同於第1 ®,差別在於,所有的指狀部,包括位於左質量塊η 的指狀部131、位於右質量塊14〇的指狀部141、左指狀部彳口與右指出 部118均採平行湖的方式,而指狀部131與左指狀部117、指狀部^ 與右指狀部彻卿成上τ交錯的制方式。此種排財式,·可綱 差動電容式的加速度偵測結構。 請參考第8Α圖,其為本發明第三具趙實施例之第一例中沿A—轴 線之剖面圖,其為左指狀部117a與右指狀部彻a位於指狀部⑶_ 狀部141a的下方而形成t極重#的情形。 .201122482 圖顺本發明第三频實施财之I射,沿β^轴線之剖 面圖,其· 了左指狀部117a為平行湖,且餘部131 的情形。 第9A圖係為本發明第三具體實施例之第二例中沿a—A轴線之剖面 圖’其為左指狀部117b細狀部機位於缝部⑶幽狀部池 的上方而形成電極重疊的情形。An example of the structure. The electrodes formed by the CMOS process have electrodes that overlap the left fingers 115b and the fingers 132b to form a first capacitance, and the left fingers 115b and the fingers have overlapping electrodes to form a second electrode. capacitance. When the left mass 13G moves up and down, the first valley and the first capacitor will increase and decrease. Except that the fingers on the left finger/right finger or the mass are arranged in an up and down staggered manner, both may be arranged in parallel, but the left finger, the finger of the left mass, The fingers of the right finger/right mass form an up and down staggered arrangement. Thus, the first capacitance/third capacitance 'second capacitance/fourth capacitance formation-increasing-_ mode can be formed, and the design purpose of the differential capacitance type accelerometer can also be achieved. Hereinafter, several embodiments will be described. Please refer to FIG. 7 , which is a third embodiment of the planar micro accelerometer of the present invention. The basic structure is the same as that of the first ® , except that all the fingers include the fingers located at the left mass η. 131. The finger 141, the left finger mouth and the right pointing portion 118 located at the right mass 14 均 are all in parallel with the lake, and the fingers 131 and the left fingers 117, the fingers ^ and the right The fingers are cut into a system of alternating τ. This kind of fuel-saving type, can be a differential capacitance type acceleration detection structure. Please refer to FIG. 8 , which is a cross-sectional view along the A-axis in the first example of the third embodiment of the present invention, in which the left finger portion 117 a and the right finger portion are located at the finger portion ( 3 ) _ shape. A case where t pole weight # is formed below the portion 141a. .201122482 The following is a cross-sectional view along the β^ axis of the third frequency of the present invention, in which the left finger 117a is a parallel lake and the remainder 131. Figure 9A is a cross-sectional view along the a-A axis in the second example of the third embodiment of the present invention. The left-handed portion 117b is formed above the slit portion (3) pleated pool. The case where the electrodes overlap.

第9B9B

圖則為本發明第三具體實施例中之第二例中,沿 面圖,其說明了左指狀部满為平行·,且指狀部咖亦為平行排列 的情形 亦可以左指狀部位於指狀部131a 除了第8A、8B、9A、9B圖的情形外 之上’而右指狀部位於指狀部141a之下的排列方式,或者反過來的方式, 均可達到差動電容式加速度計的結構。 第8A、8B、9A、9B圖的實施例,係採取平面電極的製作方法。同樣 地’本發明亦可獅CM0S製程技術,其說明於第1〇八、湖、In the second example of the third embodiment of the present invention, the plan view shows that the left fingers are completely parallel, and the fingers are also arranged in parallel, and the left fingers are also located. In addition to the case of the 8A, 8B, 9A, and 9B diagrams, the finger portion 131a is disposed above the finger portion 141a, or the reverse manner, and the differential capacitance acceleration can be achieved. The structure of the meter. In the embodiments of Figs. 8A, 8B, 9A, and 9B, a method of fabricating a planar electrode is employed. Similarly, the invention can also be used in the lion CM0S process technology, which is described in the first eight, eight,

圖。 請參考第概圖,其為本發明第三具趙實施例之第三例之第一樣態, 沿A-A轴線之剖關,其 CM〇s製程,崎上的以電極將會形成 多層電極的形態。左指狀部㈣、右指狀部恤、指狀部獅與指狀部 馳均為多層電極結構,且左指狀部阶與右指狀部1他位於指狀部 131b、指狀部i41b的下方。 第10B圖係為本發明第三具趙實施例中之第三例之第一樣態沿 軸線之剖面圖’其為_ CMOS製程並具有五層金軸_,M2, M3, M4, 12 201122482 M5)的結構示範例。藉由CM〇s製程所形成的電極,讓左指狀部hr與指 狀部131b具有重昼的電極而形成第-電容與第二電容1發生左質量塊 130之上下運動時,第—電容與第二電容將發生同時發生增減的情形不 過’第三電容與第四電容將產生反方向的電容增減。Figure. Please refer to the overview, which is the third state of the third example of the third embodiment of the present invention. The CM〇s process is performed along the AA axis, and the electrodes on the surface of the Sasa will form a multilayer electrode. Shape. The left finger (4), the right finger shirt, the finger lion and the finger are all multi-layer electrode structures, and the left finger and the right finger 1 are located at the finger 131b and the finger i41b Below. 10B is a cross-sectional view along the axis of the third state of the third embodiment of the third embodiment of the present invention. It is a CMOS process and has five layers of gold axes _, M2, M3, M4, 12 201122482 An example of the structure of M5). The electrode formed by the CM〇s process causes the left finger hr and the finger 131b to have a heavy electrode to form a first capacitor and the second capacitor 1 when the left mass 130 moves up and down, the first capacitor The second capacitor will occur simultaneously with the increase or decrease. However, the third capacitor and the fourth capacitor will increase or decrease the capacitance in the opposite direction.

第10C ®係為本發明第三具體實施例之第三例之第二樣態,沿A—A 軸線之剖面圖,其採用CM〇s製程,概念上的整片電極將會形成多層電極 的形態。左指狀部117d、右指狀部H8d、指狀部131b與指狀部“化均 • 為多層電極結構,且左指狀部與右指狀部118d位於指狀部131b、指 狀部141b的上方。 第10D圖係為本發明第三具體實施例中之第三例之第二樣態,沿 轴線之剖面圖,其為採用CM0S製程並具有五層金屬層(Μ1, Μ2, Μ3, Μ4, Μ5)的結構示範例嘈由CM〇s製程所形成的電極,讓左指狀部⑽與指 狀部131b具有重叠的電極而形成第—電容與第二電容。當發生左質量塊 130之上下運動時,第—電容與第二電容將發生同時發生增減的情形不 籲 ㉟’第二電容與第四電容將產生反方向的電容増減。 同樣地’除了左指狀部與右指狀部均同時位於指狀部131amib或指 狀部141趣b的上方或者下方,亦可採取左指狀部位於上方而右指狀部 位於下方的方式排列。或者,反過來,左質量塊13〇上的指狀部⑶挪化 與右質量塊上_狀部141a/141b分雜於上核下方的制方式均可。 雖然本發明之實關揭露如上輯,然其並_職定本發明, 任何熟習相關技藝者,在不脫離本發明之精神和範圍内,當可作些許之更 動與调飾,因此本發明之專利保護範圍須視本說明書所附之申請專利範圍⑸ 13 201122482 所界定者為準。 【圖式簡單說明】 第1A圖係為本發明之出平面微加速度計第一具镀實施例之一樣態; 第1B圖係為本發明之出平面微加速度計第一具體實施例之另一樣態; 第1C圖係為本發明之出平面微加速度計第一具艘實施例之又一樣態; 第2A圖係為本發明第一具體實施例之第一例中’沿A—A軸線之剖面圖; 第2B圖係為本發明第一具體實施例中之第一例中,沿B—B軸線之剖面圖; 鲁第3A圖係為本發明第一具體實施例之第二例中,沿A—A軸線之剖面圖; 第3B圖係為本發明第一具體實施例中之第二例中,沿B—B轴線之剖面圖; 第4圖係為本發明之出平面微加速度計第二具璩實施例; 第5A圖係為本發明第二具體實施例之第一例中’沿A—A軸線之剖面圖; 第5B囷係為本發明第二具體實施例中之第一例中,沿B—B轴線之剖面圖; 第6A圖係為本發明第二具體實施例之第二例中,沿A_A軸線之剖面圖; 第6B圖係為本發明第二具體實施例中之第二例中,沿B—B轴線之剖面圖; • 第7圖係為本發明之出平面微加速度計第三具韹實施例; 第8A圖係為本發明第三具體實施例之第一例中,沿A—A軸線之剖面圖; 第8B圖係為本發明第三具艎實施例中之第一例中’沿B—B軸線之剖面圖; 第9A圖係為本發明第三具體實施例之第二例中,沿A—A軸線之剖面圖; 第9B圖係為本發明第三具體實施例中之第二例中’沿B—B轴線之剖面圖; 第10A圖係為本發明第三具體實施例之第三例之第一樣態,沿A—A軸線 之剖面圖; 第10B圖係為本發明第三具體實施例中之第三例之第一樣態,沿軸[s] 14 201122482 線之剖面圖; 第10C圖係為本發明第三具體實施例之第三例之第二樣態’沿A—A轴線 之剖面圖;及 第10D圖係為本發明第三具體實施例中之第三例之第二樣態’沿轴 線之剖面圖。 【主要元件符號說明】 100'100a ' 100b 出平面微加速度計 φ 200、200a、200b 出平面微加速度計 300、300a、300b、300c、300d 出平面微加速度計 100-1 出平面微加速度計 100-2 出平面微加速度計 101 基板 110 固定部 111、111a、111b、112、112a、112b 左指狀部 _ 113、113a、113b、114、114a、114b 右指狀部 115、 115a、115b 左指狀部 116、 116a、116b 右指狀部 117、 117a、117b、117c、117d 左指狀部 118、 118a、118b、118c、118d 右指狀部 120 扭轉部 130 左質量塊10C is the second aspect of the third example of the third embodiment of the present invention. The cross-sectional view along the A-A axis uses a CM〇s process, and the conceptual entire electrode will form a multilayer electrode. form. The left finger portion 117d, the right finger portion H8d, the finger portion 131b, and the finger portion are "a multilayer electrode structure, and the left and right finger portions 118d are located at the finger portion 131b and the finger portion 141b. The 10D is a second aspect of the third example of the third embodiment of the present invention, and is a cross-sectional view along the axis, which is a CM0S process and has five metal layers (Μ1, Μ2, Μ3). Example of the structure of Μ4, Μ5) 电极 The electrode formed by the CM〇s process has the left finger (10) and the finger 131b have overlapping electrodes to form a first capacitance and a second capacitance. When a left mass occurs When the upper and lower movements of 130, the first capacitance and the second capacitance will occur simultaneously increase or decrease, and the second capacitance and the fourth capacitance will produce a capacitance reduction in the opposite direction. Similarly, except for the left finger and the right The fingers are located above or below the finger 131amib or the finger 141, or may be arranged such that the left finger is above and the right finger is below. Or, in turn, the left mass The finger (3) on the 13〇 is divided into the _ 141a/141b on the right mass The method underlying the upper core can be used. Although the present invention is disclosed in the above, it is intended that the invention may be made by those skilled in the art without departing from the spirit and scope of the invention. The invention is based on the scope of the patent application (5) 13 201122482 attached to the specification. [FIG. 1A is a planar micro-accelerometer of the present invention. The first embodiment of the first embodiment of the planar micro-accelerometer is the first embodiment of the planar micro-accelerometer of the present invention; 2A is a cross-sectional view along the A-A axis in the first example of the first embodiment of the present invention; FIG. 2B is the first in the first embodiment of the present invention. In the example, a cross-sectional view along the B-B axis; Lu 3A is a cross-sectional view along the A-A axis in the second example of the first embodiment of the present invention; FIG. 3B is the first specific embodiment of the present invention. In the second example of the embodiment, the section along the B-B axis Figure 4 is a second embodiment of the planar micro-accelerometer of the present invention; Figure 5A is a cross-sectional view along the A-A axis in the first example of the second embodiment of the present invention; 5B is a cross-sectional view along the B-B axis in the first example of the second embodiment of the present invention; FIG. 6A is a second example of the second embodiment of the present invention, along the A_A axis FIG. 6B is a cross-sectional view along the B-B axis in the second example of the second embodiment of the present invention; and FIG. 7 is the third embodiment of the planar micro accelerometer of the present invention.实施实施例; Figure 8A is a cross-sectional view along the A-A axis in the first example of the third embodiment of the present invention; Figure 8B is the first example in the third embodiment of the present invention. 'A cross-sectional view along the B-B axis; FIG. 9A is a cross-sectional view along the A-A axis in the second example of the third embodiment of the present invention; FIG. 9B is a third embodiment of the present invention In the second example, the cross-sectional view along the B-B axis; the 10A is the third state of the third embodiment of the third embodiment of the present invention, along the A-A axis FIG. 10B is a cross-sectional view taken along line [s] 14 201122482 of the third embodiment of the third embodiment of the present invention; FIG. 10C is a third embodiment of the present invention The second aspect of the third example is a cross-sectional view along the A-A axis; and the 10D is a second aspect of the third example of the third embodiment of the present invention. . [Description of main component symbols] 100'100a ' 100b Out-of-plane micro-accelerometer φ 200, 200a, 200b Out-of-plane micro-accelerometers 300, 300a, 300b, 300c, 300d Out-of-plane micro-accelerometer 100-1 Out-of-plane micro-accelerometer 100 -2 Out-of-plane micro-accelerometer 101 Substrate 110 Fixed portion 111, 111a, 111b, 112, 112a, 112b Left finger _ 113, 113a, 113b, 114, 114a, 114b Right finger 115, 115a, 115b Left finger Shapes 116, 116a, 116b right fingers 117, 117a, 117b, 117c, 117d left fingers 118, 118a, 118b, 118c, 118d right fingers 120 torsion 130 left mass

131、131a、131b、132、132a、132b、133、133a、133b 相狀A ° [S] 15 201122482 140 右質量塊 指狀部 141、141a、141b、142、142a、142b、143、143a、143b 150 連接臂 L1 力臂 M1、M2、M3、M4、M5、M6 金屬層131, 131a, 131b, 132, 132a, 132b, 133, 133a, 133b phase A [S] 15 201122482 140 right mass finger 141, 141a, 141b, 142, 142a, 142b, 143, 143a, 143b 150 connecting arm L1 arm M1, M2, M3, M4, M5, M6 metal layer

[S] 16[S] 16

Claims (1)

.201122482 七、申請專利範圍: 1. 一種出平面微加速度計,包含: 一基板; 一固定部,形成於該基板上,包含有: 複數個左指狀部,每個該左指狀部之兩側分別形成有一第一表面電極 與一第二表面電極,且該些左指狀部以垂直方向上下交錯之方式間隔排 列;及 Φ 複數個右指狀部,每個該右指狀部之兩側分別形成有一第三表面電極 與一第四表面電極’且該些右指狀部以垂直方向上下交錯之方式間隔排列; 一扭轉部,連接該固定部;及 一不對稱部,具有左右兩端並連接於該扭轉部,藉由該扭轉部之形變 使該不對稱部力矩平衡,用以進行翹翹板式之出平面之運動包含: 一第一可動件,形成於該左端,其質量為M1,重心距離該扭轉部之力 臂為L,並具有複數個第一指狀部,該些第一指狀部與該些左指狀部形成交 17 201122482 四電容。 2. 如申請專利範圍第]項之出平面微加速度計,其中該第一表面電極該 第二表面電極、該第三表面電極、該第四表面電極、該第五表面電極該 第六表面電極、該第七表面電極與該第八表面電極係以互補式金氧半導體 (CMOS)製程形成。 3. 如申請專利範g|第1項之奸面微加速度計,其中該些左指狀部之上下 交錯之方式間賭列係採取上、下、上、下之交錯方式排列。 _ 4•如巾請專概圍第彳項之出平面微加速度計,其中該些左錄部之上下 交錯之方式間隔排列係採取上上、下下之交錯方式排列。 5·如申請專利範圍第1項之出平面微加速度計,其中該些右指狀部之上下 交錯之方式間隔排列係採取上、下、上、下之交錯方式排列。 6·如申請專利範圍第1項之出平面微加速度計,其中該些右指狀部之上下 交錯之方式間隔排列係採取上上、下下之交錯方式排列。 7. 如申請專利範圍第1項之出平面微加速度計,其中該些左指狀部與該些 • 右指狀部之上下交錯之方式間隔排列係為兩兩對稱。 8. —種出平面微加速度計,包含: 一基板; 一固定部,形成於該基板上,包含有: 複數個左指狀部,每個該左指狀部之兩側分別形成有一第一表面電極 與一第二表面電極;及 複數個右指狀部,每個該右指狀部之兩側分別形成有一第三表面電極 與一第四表面電極; 18 201122482 一扭轉部,連接該固定部;及 一不對稱部,連接於該扭轉部,藉由該扭轉部之形變使該不對稱部力 矩平衡,用以進行出平面之運動,包含: 一第一可動件’形成於該不對稱部之左端,其質量為M1,重心距離該 扭轉部之力臂為L ’並具有複數個第一指狀部,其與該些左指狀部形成交又 排列,每個該第一指狀部之兩側分別形成有與該第一表面電極、該第二表 面電極分別面對形成部分重巷之一第五表面電極與一第六表面電極而形成 • 一第一電容與一第二電容,且該些第一指狀部以垂直方向上下交錯之方式 間隔排列;及 一第二可動件,形成於該不對稱部之右端,其質量為M2並與M1不相 等,重心距離該扭轉部之力臂為’與該第一可動件形成力矩不平衡,並具 有複數個第二指狀部,其與該些右指狀部形成交又排列,每個該第二指狀 部之兩侧分別形成有與該第三表面電極、該第四表面電極分別面對形成部 分重疊之一第七表面電極與一第八表面電極而形成一第三電容與一第四電 ® 容,且該些第二指狀部以垂直方向上下交錯之方式間隔排列。 9.如申請專利範圍第8項之出平面微加速度計,其中該第一表面電極、該 第一表面電極、該第二表面電極、該第四表面電極、該第五表面電極該 第六表面電極、該第七表面電極與該第八表面電極仙互補式金氧半導體 (CMOS)製程形成。 10·如申請專利範圍第8項之出平面微加速度計,其中該些第一指狀部之 上下交錯之方式間隔排列係採取上、下、上、下之交錯方式排列。 11.如申請專利範圍第8項之出平面微加速度計,其中該些第一指狀部之上⑸ 19 201122482 下交錯之方式間隔排列係採取上上、下下之交錯方式排列。 12_如申請專利範圍第8項之出平面微加速度計,其中該些第二指狀部之 上下交錯之方式間隔排列係採取上、下、上、下之交錯方式排列。 13.如申請專利範圍第8項之出平面微加速度計,其中該些第二指狀部之 上下交錯之方式間隔排列係採取上上、下下之交錯方式排列。 14·如申請專利範圍第8項之出平面微加速度計,其中該些第一指狀部與 該些第二指狀部之上下交錯之方式間隔排列係為對稱結構。 φ 15. —種出平面微加速度計,包含: 一基板; 一固定部,形成於該基板上,包含有: 複數個左指狀部,每個該左指狀部之兩侧分別形成有一第一表面電極 與一第二表面電極;及 複數個右指狀部’每個該右指狀部之兩侧分別形成有一第三表面電極 與一第四表面電極; Φ 一扭轉部,連接該固定部;及 一不對稱部,連接於該扭轉部,藉由該扭轉部之形變使該不對稱部力 矩平衡’用以進行出平面之運動,包含: 一第一可動件,形成於該不對稱部之左端,其質量為M1,重心距離該 扭轉部之力臂為L,並具有複數個第一指狀部,該些第一指狀部與該些左指 狀部形成交叉排列並形成上下交錯,每個該第一指狀部之兩側分別形成有 與該第一表面電極、該第二表面電極分別面對形成部分重疊之一第五表面 電極與一第六表面電極而形成一第一電容與一第二電容;及 20 201122482 一第二可動件’形成於該不對稱 丨之右端,其質量為M2,重心距離該 轉。Ρ之力臂為L,與該第一可動 風刀矩不平衡,並具有複數個第二指 狀部’該些第二指狀部與該些右指狀部形成交又排列並形成上下交錯,每 個該第二指狀部之兩側分鄉成有與該第三表面電極、該第四表面電極分 j十形成。ρ分重昼之一第七表面電極與一第八表面電極而形成一第三電 容與一第四電容。.201122482 VII. Patent application scope: 1. An out-plane micro-accelerometer, comprising: a substrate; a fixing portion formed on the substrate, comprising: a plurality of left fingers, each of the left fingers a first surface electrode and a second surface electrode are respectively formed on the two sides, and the left fingers are arranged at intervals in a vertical direction; and Φ a plurality of right fingers, each of the right fingers a third surface electrode and a fourth surface electrode ' are respectively formed on the two sides, and the right fingers are arranged at intervals in a vertical direction; a torsion portion is connected to the fixing portion; and an asymmetrical portion has left and right sides The two ends are connected to the torsion portion, and the asymmetry portion is balanced by the deformation of the torsion portion, and the movement of the plane of the seesaw type is included: a first movable member is formed at the left end, and the mass thereof For M1, the center of gravity of the torsion portion is L, and has a plurality of first fingers, and the first fingers form an intersection with the left fingers. 2. The out-of-plane micro-accelerometer according to claim 4, wherein the first surface electrode, the second surface electrode, the third surface electrode, the fourth surface electrode, the fifth surface electrode, the sixth surface electrode The seventh surface electrode and the eighth surface electrode are formed in a complementary metal oxide semiconductor (CMOS) process. 3. For example, the patented micro-accelerometer is applied in the patented model g|1, wherein the gambling columns of the left and right fingers are arranged in an interlaced manner of up, down, up, and down. _ 4• For the towel, please refer to the plane micro-accelerometer of the third item, in which the left-hand parts are arranged in an interlaced manner, which is arranged in an upper, lower and lower staggered manner. 5. The planar micro accelerometer according to item 1 of the patent application scope, wherein the right fingers are arranged in an interlaced manner in an interlaced manner, which is arranged in an interlaced manner of up, down, up and down. 6. The planar micro accelerometer according to item 1 of the patent application scope, wherein the right fingers are arranged in an interlaced manner in an upper and lower interlacing manner. 7. The plane micro-accelerometer according to item 1 of the patent application, wherein the left fingers are spaced apart from each other by the upper and lower sides of the right finger. 8. A planar micro-accelerometer, comprising: a substrate; a fixing portion formed on the substrate, comprising: a plurality of left fingers, each of which has a first side formed on each side of the left finger a surface electrode and a second surface electrode; and a plurality of right fingers, each of the two sides of the right finger is formed with a third surface electrode and a fourth surface electrode; 18 201122482 a torsion portion, the connection is fixed And an asymmetrical portion connected to the torsion portion, wherein the deformation of the torsion portion balances the moment of the asymmetrical portion for performing the movement of the plane, comprising: forming a first movable member' The left end of the portion has a mass M1, and the center of gravity of the torsion portion is L' and has a plurality of first fingers, which are arranged and arranged with the left fingers, each of the first fingers The two sides of the portion are respectively formed with the first surface electrode and the second surface electrode to form a partial surface of the fifth surface electrode and a sixth surface electrode to form a first capacitor and a second capacitor. And the first ones The second movable member is formed at a right end of the asymmetrical portion, and has a mass M2 and is not equal to M1, and the center of gravity of the torsion portion is 'and The first movable member forms a torque imbalance, and has a plurality of second finger portions which are arranged and arranged with the right finger portions, and the two sides of each of the second finger portions are respectively formed with the third portion The surface electrode and the fourth surface electrode respectively form a third surface electrode and a fourth surface electrode which are partially overlapped to form a third capacitor and a fourth capacitor, and the second fingers are perpendicular The directions are arranged in an alternating manner. 9. The planar microaccelerometer of claim 8 wherein the first surface electrode, the first surface electrode, the second surface electrode, the fourth surface electrode, and the fifth surface electrode are the sixth surface The electrode, the seventh surface electrode and the eighth surface electrode are formed by a complementary metal oxide semiconductor (CMOS) process. 10. The planar micro-accelerometer according to item 8 of the patent application scope, wherein the first finger portions are arranged in an alternating manner in an upper, lower, upper and lower staggered manner. 11. The plane micro-accelerometer according to item 8 of the patent application scope, wherein the first finger portions are arranged in an interlaced manner on the upper and lower sides of the (5) 19 201122482. 12_ The plane micro-accelerometer according to item 8 of the patent application scope, wherein the second finger portions are arranged in an alternating manner of up, down, up, and down. 13. The planar microaccelerometer according to item 8 of the patent application scope, wherein the second finger portions are arranged in an upper and lower staggered manner. 14. The planar micro-accelerometer according to item 8 of the patent application, wherein the first fingers are spaced apart from the second fingers in a manner of being symmetrically arranged. Φ 15. The planar micro-accelerometer comprises: a substrate; a fixing portion formed on the substrate, comprising: a plurality of left fingers, each of which has a first side formed on each side of the left finger a surface electrode and a second surface electrode; and a plurality of right fingers ′ each of the two sides of the right finger are respectively formed with a third surface electrode and a fourth surface electrode; Φ a torsion portion, the connection is fixed And an asymmetrical portion connected to the torsion portion, wherein the asymmetrical portion is torque-balanced by the deformation of the torsion portion for performing a plane motion, comprising: a first movable member formed on the asymmetry The left end of the portion has a mass M1, the center of gravity of the torsion portion is L, and has a plurality of first finger portions, and the first finger portions are arranged in a cross arrangement with the left fingers to form an upper and lower portions. Interlaced, each of the first finger portions is formed with a first surface electrode and a second surface electrode respectively forming a partial overlap with the first surface electrode and the second surface electrode to form a first a capacitor and a second Capacitance; and 20 201122482 A second movable member ' is formed at the right end of the asymmetric crucible, the mass of which is M2, and the center of gravity is the distance. The force arm of the cymbal is L, and the first movable air knife moment is unbalanced, and has a plurality of second finger portions. The second finger portions are arranged and arranged with the right finger portions and are formed up and down. Each of the two sides of the second finger portion is formed to be formed with the third surface electrode and the fourth surface electrode. The seventh surface electrode and the eighth surface electrode form a third capacitance and a fourth capacitance. 16·如申請專利範圍第15項之出平面微加速度計,其中該第一表面電極、 該第二表面電極、該第三表面電極、該第四表面電極、該第五表面電極、 該第六表面電極、該第七表面電極與該第八表面電極係以互補式金氧半導 體(CMOS)製程形成。 17·如申請專利範圍第15項之出平面微加速度計’其中該些第一指狀部與 該些第二指狀部係為平行排列。The planar micro-accelerometer of claim 15 wherein the first surface electrode, the second surface electrode, the third surface electrode, the fourth surface electrode, the fifth surface electrode, the sixth The surface electrode, the seventh surface electrode, and the eighth surface electrode are formed in a complementary metal oxide semiconductor (CMOS) process. 17. The planar microaccelerometer of claim 15 wherein the first fingers and the second fingers are arranged in parallel. [S] 21[S] 21
TW98146136A 2009-12-31 2009-12-31 Out-of plane accelerometer TW201122482A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103910323A (en) * 2013-01-09 2014-07-09 先技股份有限公司 Micro-electromechanical device
TWI574910B (en) * 2013-01-09 2017-03-21 先技股份有限公司 Mems apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103910323A (en) * 2013-01-09 2014-07-09 先技股份有限公司 Micro-electromechanical device
TWI574910B (en) * 2013-01-09 2017-03-21 先技股份有限公司 Mems apparatus

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