TW201121084A - System and method for manufacturing solar cell - Google Patents

Abstract

The invention discloses a system and a method for manufacturing a solar cell. The system for manufacturing the solar cell comprises a first coating device, a second coating device, and a combination device. The first coating device is used to form an absorber layer on a first substrate, having a first surface and a second surface, and the absorber layer is formed on the first surface. The second coating device is used to form a transparent conducting layer on a second substrate, having a third surface and a fourth surface, and the transparent conducting layer is formed on the third surface. The combination device is used to combine the first substrate and the second substrate, where the first surface toward the third surface.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell system and, in particular, to a thin film and a method of fabricating the same. 'Prior art

With the increase of population and the advancement of science and technology, the issue of pollution is getting more and more attention. As the energy is depleted and the environmental materials are decreasing year by year, the world is open to the use of renewable energy for the production of petrochemicals such as coal. Reclaimed Lin's _ and water and hydropower are both renewable energy and wind. The cost of solar power generation is low and does not need to occupy Pangshui. The door is paid. Generally speaking, the solar power generation side uses solar energy to absorb light energy and generate electricity to generate electricity. The semiconductor materials of the upper energy, generally referred to as solar cells = the use of materials and technologies, solar cells can be subdivided; pool = thin film solar cells. Among them, the wafer is surface-etched with a p-type semiconductor germanium wafer, a ρ_Ν junction N junction diffusion, a surface anti-reflection film, and a metal electrode for screen printing. On the other hand, a thin film type solar cell generates electricity by absorbing light energy from a film of a different composition to generate electric current. For example, please refer to FIG. 1 , which is a schematic structural view of a solar cell in the prior art. As shown in FIG. 1, the solar cell 9 includes a substrate 90 and a plurality of 201121084 layer films on the substrate 90. A layer of molybdenum is formed on the solar cells 9 and 9 to form a layer of the absorber layer 92 on the substrate. Next, a layer (CdS) layer 93 is formed on the metal layer 91. Then, a layer of the inorganic zinc oxide S fQ layer 94 is sequentially formed on the layer of the antimony sulfide layer 93 formed on the vulcanized layer. (4) Doping zinc oxide (10): A1 AZO) layer 95. Finally, the heavily doped oxidized layer & , = 96 and the external electrode 97. The ytterbium reflective layer is formed on the M2 like ff, and the substrate 9 〇 can be nano glass (S 〇da_lime fine), copper indium (CuInSe2) or copper indium gallium 砸 砸 化 layer 99 is an N-type semiconductor, that is, the f structure of the bismuth can be a p_n diode junction, cadmium sulfide layer 93 may also be referred to as a buffer layer. For the absorption efficiency of the hi古hi, the sulphide ore layer 93 may also be selected to have other light transmission and 'a loss of the solar cell 9 due to the reflective surface of the semiconductor surface, and magnesium fluoride (g) may be used. 2) As the anti-reflection layer 96 is used to increase the proportion of sunlight entering the solar cell 9. Please continue to refer to (4)-, because the solar light contains a large spectral range, when the solar energy, the pool 9 is irradiated with sunlight, among which the short wavelength and the medium wavelength The long wavelength of the 11⁄4 light is absorbed by different regions, thereby exciting the free electron form. For example, the aluminum heavily doped oxidized layer 95 and the absorbing layer 92 can absorb sunlight, and the aluminum heavily doped zinc oxide layer 95 and the absorbing layer 92 are N-type and P-type semiconductors, respectively, if incident sunlight A light energy greater than the band gap of the semiconductor can excite electrons in the valence band of the semiconductor to jump to the conductive band (c〇nducti〇n ban) Conducted electrons, thereby generating free electrons and holes. In other words, when the light energy of the sunlight absorbed by the |g heavily doped zinc oxide layer 95 and the absorption layer 92 201121084 exceeds the corresponding energy band gap, respectively A large amount of free electrons and holes are generated, and these free electrons and holes can be led out by the molybdenum metal layer 91 and the external electrode 97 to form a current. Thus, the solar cell 9 can generate electricity by absorbing light of the sunlight to generate electricity. As mentioned above, in order to improve the manufacturing efficiency of solar cells, the current practice is still to improve the coating technology of each layer and shorten the manufacturing time of each layer to improve the manufacturing efficiency of the overall solar cell. However, although The improvement of the mineral film technology of each layer, the solar cell still has to stack the clocks layer by layer, which can not effectively shorten the manufacturing time. Therefore, the solar cell needs a more efficient manufacturing process than the layer-by-layer cascading method. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a solar cell manufacturing system that does not sequentially manufacture a solar cell by layer-by-layer plating, which can effectively shorten the manufacturing time. For example, the solar cell manufacturing system of the present invention comprises a first coating device, a second coating device, and a bonding device, wherein the first film is disposed to form an absorber layer on the first substrate, first The substrate has a first surface and a second surface 'and the absorber layer is above the first surface. The first film device is configured to form a transparent electrode layer on the second substrate, the first substrate has a third surface and a fourth surface, and the transparent electrode layer is located on the third surface. The bonding device is configured to bond the first substrate to the second substrate, wherein the first surface faces the third surface. In a practical application, the first substrate may have a back electrode layer, and the first coating 201121084 device forms an absorber layer over the back electrode layer. In addition, the first money forms a buffer layer (buffei* lays on the layer can have an external electric anti-reflection layer (anfcefleetiGn丨^ engage / in addition, 'di-one membrane device can form a buffer layer in transparent electricity απί) i Wherein the 'transparent electrode layer may comprise (iv) a doped zinc oxide layer 'AZ〇) and an intrinsic zinc oxide (i_Zn0) layer, and the intrinsic zinc oxide layer is located on the aluminum heavily doped oxidized layer.卜'Γφ real, with +, the combination device can include a positioning module and θ, wherein the reading mode field is scheduled, the rib is aligned with the first substrate and the second substrate, and the positioning is output according to the execution result of the positioning program. information. The pressure module is connected to the group and is subjected to a laminating process for bonding the first substrate and the second substrate. Another method of the present invention is to provide a solar cell manufacturing method according to a specific embodiment of the present invention, comprising the steps of: forming an absorber layer on a first substrate, The first substrate has a first surface and a second surface, and the absorption layer is located above the first surface; the transparent electrode layer is formed on the second substrate, the second substrate has a third surface and a fourth surface, and is transparent The electrode layer is located above the third surface; the first substrate and the second substrate are combined, wherein the first surface faces the third surface. In the north-only application, the first substrate may have a back electrode layer, and the absorption layer is formed; above the moon electrode layer. Further, a buffer layer may be formed on the absorption layer. On the other hand, the second substrate may have an external electrode and an anti-reflection layer 201121084 (anti-reflecti layer), and the external electrode layer may be formed on the surface of the electrode layer. Connecting the 'essential zinc oxide layer' and the intrinsic zinc oxide layer is in use, wherein the bonding the first substrate and the second substrate 2 may comprise the following steps: performing a positioning procedure for aligning

Soil material - substrate; a lamination process is performed to bond the first substrate to the second substrate in accordance with the results of the positioning procedure. According to the invention, the solar cell manufacturing system and the solar cell manufacturing method of the present invention have the same age of the solar cell on a plurality of substrates, and then the substrates are laminated. The effect of absorbing light energy to convert into electrical energy is achieved. In particular, the solar cell of the present invention does not manufacture solar cells in a sequential manner by layer-by-layer plating, so that the manufacturing time can be effectively shortened. The advantages and spirit of the present invention will be further understood from the following detailed description of the invention. [Embodiment] The present invention provides a solar cell manufacturing system and a solar cell manufacturing method. Several specific embodiments of the invention are disclosed below. Referring to FIG. 2, FIG. 2 is a block diagram showing a solar cell manufacturing system according to an embodiment of the present invention. As shown, the solar cell manufacturing system 1 includes a first coating device 1A, a second coating device 12, and a 201121084 bonding device 14. The first money film device Kawada, layer) is above the first ride, and the first - base * table is m = 0^ber first. In the practice, the bonding device 14 includes a positioning module +-substrate, and outputs positioning information according to the execution result of the clamping program. The reed module 142 is connected to the positioning module 14〇, and receives and according to the pressing procedure, the rib is combined with the first-substrate wire two-image I, and the first layer-coating device 10 and the second coating device 12 are simultaneously After the execution of the i film is completed, the first substrate and the bonding device 14 are separated from the substrate by the first filming device 1 and the substrate and the second coating device 12 are rotated. Here, the second substrate having the first substrate and the second substrate is the second portion. Next, the combined device 14 is re-pooled. In the following, please refer to FIG. 3A, which shows a block diagram of the first part of a specific embodiment according to the present invention. As shown in the figure, the first substrate 20 has a first substrate 200, a back electrode layer 202, and an absorption layer 204. The back electrode layer 202 and the absorbing layer 2〇4 are located on the same side of the first substrate 2〇〇, and are sequentially the first substrate 200, the back electrode layer 202, and the absorbing layer 204. In practice, the first substrate 200 may be selected from stainless steel (stainiess steel), aluminum, titanium dioxide (Ti〇2), soda glass (s〇da lime 201121084 glass), polymer (p〇lymer) or other suitable Material. The back electrode layer 202 can be matched with a material having good ohmic contact with the absorbing layer 204. For example, when the absorbing layer 204 is selected from copper indium diselenide (CuInSe2) or bismuth bismuth bismuth hydride (QGS), A molybdenum (M〇) metal film is used as the back electrode layer 202. In general, the absorbing layer 204 is a p-type semiconductor, and the absorbing layer 204 may be selected from copper indium bismuth disulfide (CIInSe2) or copper indium bisphosphide (CIGS). CuInS2), copper bismuth disulfide (cuGaS2), copper gallium diselide (cuGaSe2) or other suitable materials.

Referring to Figure 3B, Figure 3B is a block diagram of a second portion of an embodiment of the present invention. As shown, the second portion 22 has a second substrate 22, an anti-reflective layer 222, a transparent electrode layer 224, and a buffer layer 226. The anti-reflection layer 222, the transparent electrode layer 224, and the buffer layer 226 are located on the same side of the second substrate 220, and sequentially move the second substrate 220, the anti-reflection layer 222, the transparent electrode layer, and the buffer layer. In the second substrate 220, a transparent plastic material may be used, and a plurality of external electrodes 2200 are formed in the second substrate 220. The external electrode (8) is (10) or aluminum (Α1). The two-dwelling transparent electrode layer 224 may comprise a heavily doped oxidized layer 224 and a zinc oxide layer 2242. Among them, the heavily doped zinc oxide layer 2 is a germanium-type semi-conductive zinc layer 2242 which is an undoped semiconductor. Anti-reflective layer Please: 11 Mouse (MgF2) film. The buffer layer 226 may be selected from the group consisting of tin sulfide 匕L, diindium trisulfide (ΙηΑ), diindium trioxide 3) or other suitable materials. / After the first portion 2〇 and the second portion 22 are joined by the bonding device 14, the gentleman has a good battery. Referring to FIG. 3c, FIG. 3 is a diagram showing a solar cell module 201121084 according to an embodiment of the present invention. As shown in the figure, the solar cell 2 includes a first portion 2 〇 and a second portion 22, and the first substrate 2 第一, the back electrode layer 202, and the absorbing layer 204 and the second portion of the first portion 20 are sequentially arranged from bottom to top. The buffer layer 226 of 22, the transparent electrode layer 224, the anti-reflection layer 222, and the second substrate 22 are. % is the same as the solar cell of the prior art, the solar cell of the present invention is also a structure formed by the junction of the PN diode, when the absorbed light energy of the incident sunlight is larger than the energy band of the semiconductor. The gap, which excites electrons in the valence band of the semiconductor, jumps to the conductive strip and becomes freely conductive electrons, thereby generating free electrons and holes. Unlike the solar cells of the prior art, the solar cells of the present invention are manufactured in a combined manner. By simultaneously manufacturing the first portion and the second portion, and finally combining the first portion with the second portion, the solar cell manufacturing system of the present invention can thereby shorten the manufacturing time. The following is a more detailed description of the method of manufacturing a solar cell according to a specific embodiment of the present invention. Referring to FIG. 1, FIG. 3c and FIG. 4, FIG. 4 is a flow chart showing a method of manufacturing a solar cell according to an embodiment of the present invention. As shown in the figure, in step S40, the first coating device 1 is formed to form an absorbing layer over the first substrate 2A. In practice, the back electrode layer 2〇2 may be pre-, and - substrate 2. . Above, an absorbing layer is formed on the electrode layer 202 by the first film forming apparatus ω. Here, the present invention is not limited to the formation of the absorption layer 2〇4, for example, the first coating device 1〇 can use the intaglio P; the method (Gravure), the electrodeposited metal method (eiec^r〇(jep〇siti) The absorbing layer 204 is formed by tensn removing, tensi〇ned-Web slot coating (sc), inkjet printing (Ink_jet printing) or other suitable method. In step S42, The second coating device 12 forms a transparent electrode layer 224 201121084

Above the second substrate 220. In practice, the anti-reflective layer 222 and the plurality of outer electrodes 2200 may be disposed on the second substrate 22A in advance, and then the second electrode film 224 is formed on the anti-reflective layer 222, and The layer 226 is over the transparent electrode layer 224. Herein, the present invention does not limit the manner in which the transparent electrode layer 224 is formed. For example, the second coating package may be formed by spray pyrolysis, chemical water bathing, or other suitable methods. Transparent electrode layer 224. I

In step S44, the bonding device 14 combines the first portion 2A and the second portion 22 to form the solar cell 2. The first portion 2 includes a substrate 200' and the second portion 22 includes a second substrate 22'. Here, the order of step S40 and step S42 should not be limited to this. The surface S40 and the step S42 are often performed at the same time, whereby the manufacturing of the solar cell 2 is only short and the figure 3 C and FIG. Figure 5 is a flow chart showing a method of fabricating a solar cell according to an embodiment of the present invention. For example, the clock film device 10 can sequentially form a back electrode layer view and an absorption 曰. That is, in step S500, first, the first plating film s5 〇 m pole layer 202 is over the first substrate 2 〇 0. Next, in ίί 2, an absorbing layer 204 is formed over the back electrode layer 202. The second mineral film device 12 can also form an anti-reflection layer, a transparent layer 2, and a buffer layer 226 in sequence. That is, in step S5〇4, the anti-reflective layer 222 is formed by the second coating device 12 to “reform the transparent electrode layer 224 into the anti-reflective layer such as the layer” in the second substrate 22〇 in step S5〇8. The buffer layer 226 is further formed on the transparent electrode for performing the positioning procedure for the positioning module 14 in step S510, and the first and second blades 220 are included. In practice, the locating program may include a program for finding edges and brothers P_〇n C〇ntr〇1 'EPC) for aligning the first part with 20g St 2: 3 sets of modules 140 may be executed according to the positioning procedure The layer-forming process of the first portion 2G and the second portion 22 may include heating the first portion 2〇 and the second portion 22 to a preset temperature, and then after positioning m indicates positioning The layer module 142 pressurizes the first portion 2〇 and the second portion 22. Thereby, the solar cell manufacturing method of the present invention can complete the fabrication of the solar cell 2. It is noted that the buffer layer is not limited to be formed on the second substrate, and may be formed on the first substrate. For example, please refer to FIG. 2, FIG. 6A and FIG. 6B. FIG. 6A is a block diagram showing a first part of another embodiment of the present invention. Figure 6B is a block diagram showing a second portion of another embodiment of the invention. As a result, the first coating device 10 and the second coating device 12 can form a multilayer film on the first substrate 200 and the second substrate 22, respectively. Here, the first substrate after the coating is the first portion, and the second portion of the second substrate after the coating. The first portion 20 has a first substrate 200, a back electrode layer 202, an absorbing layer 204, and a buffer layer 206. The back electrode layer 2 〇 2, the absorbing layer 204 and the buffer layer 206 are located on the same side of the first substrate 200, and are sequentially the first substrate 200, the back electrode layer 202, the absorbing layer 204, and the buffer layer 206. Further, the second portion 22 has a second substrate 220, an antireflection layer 222, and a transparent electrode layer 224. The anti-reflective layer 222 and the transparent electrode layer 224 are located on the same side of the second substrate 220, and are sequentially the second substrate 22, the anti-reflective layer 222, and the transparent electrode layer 224. 12 201121084 22 The first part 20 and the second part of the solar cell with the ship are placed. Here, the line edge searching and alignment procedure of the device is used to align the first frame 22' and the positioning module 14 can output the clamp information according to the positioning program. The lamination module 142 ΐ ΐ 7 7 7 7 7 7 7 7 至 至 至 至 至 至 7 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 , , , , , , , Limited use of heating and pressurization

The tilt is divided into 2G and the second portion 22. That is, the spirit of the present invention resides in a portion 20 and a second portion 22 of the art, and those skilled in the art, having ordinary knowledge, may employ other suitable methods in conjunction with the first portion 2 and the second portion 22°, for example. After being immersed in the chemical solvent, the pressure is further increased, i is divided into 20 and the second portion 22. On the other hand, the buffer layer is not limited to be formed on one of the first substrate or the second substrate, and may be formed on the first substrate and the second substrate. For example, see FIG. Figure 7 is a block diagram of a first portion of a further embodiment of the present invention. Figure 7B is a block diagram showing a second portion of still another embodiment of the present invention. As shown, the first portion 20 can have a buffer layer 2〇6, while the second portion 22 also has a buffer layer 226, which is also within the scope of the present invention. In the above description, the solar cell of the present invention does not manufacture a too 1% energy battery in such a manner that it is stacked up layer by layer. By simultaneously manufacturing different blocks of the solar cell by a plurality of mineral film devices, and combining the above-mentioned blocks, the effect of absorbing light energy to convert into electric energy is also achieved, thereby effectively reducing the manufacturing time. The features and spirits of the present invention are intended to be more apparent from the detailed description of the preferred embodiments. Rather, its purpose &<RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Therefore, the scope of the patent scope of the present invention should be reduced to the broadest interpretation of the above description, and it is read to cover all possible changes and arrangements of equality. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a structure of a solar cell in the prior art. FIG. 1 is a block diagram of a solar cell according to an embodiment of the present invention. First part of the example

Figure 2B is a block diagram showing a second portion of an embodiment of the present invention. Figure 2C is a block diagram showing a solar cell according to an embodiment of the present invention. Figure 4 is a flow chart showing a method of fabricating a solar cell according to an embodiment of the present invention. Figure 5 is a flow chart showing a method of fabricating a solar cell according to another embodiment of the present invention. Figure 6A is a block diagram of a first portion of another embodiment of the present invention. Figure 6B is a block diagram showing a second portion of another embodiment of the present invention. Figure 7A is a block diagram showing a first portion of still another embodiment of the present invention. Figure 7B is a block diagram showing a second portion of still another embodiment of the present invention. [Description of main component symbols] [s 15 201121084 1 : Solar cell manufacturing system 1 : First coating device 12 : Second coating device 14 : Bonding device 140 : Positioning module 142 : Lamination module 20 : First part 200 : First substrate 202: back electrode layer 204: absorption layer 206: buffer layer 22: second portion 220: second substrate 2200: external electrode 222: anti-reflection layer 224: transparent electrode layer 2240: aluminum heavily doped zinc oxide Layer 2242: Intrinsic zinc oxide layer 226: Buffer layer 9: Solar cell 90: Substrate 91: Molybdenum metal layer 92: Absorbing layer 93: Cadmium sulfide layer 94: Intrinsic zinc oxide layer 95: Aluminum heavily doped zinc oxide layer %: Anti- Reflective layer 97: external electrodes S40 to S44, S500 to S512: process steps

Claims (1)

201121084 VII. Patent application scope: 1. A solar cell manufacturing system comprising: a money film device for forming an absorbing layer on a first substrate, the first substrate having a a first surface and a second surface, and the absorbing layer is located above the first surface; a second coating device for forming a transparent electrode layer on a second substrate, the second substrate having a a third surface and a fourth surface, and the transparent electrode layer is located above the third surface; and a device for bonding the first substrate and the second substrate, wherein φ the first surface faces The third surface, 2. The solar cell manufacturing system of claim 1, wherein the first substrate has a back electrode layer and the first coating device forms the absorber layer over the back electrode layer. 3. The solar cell manufacturing system of claim 2, wherein the back electrode layer comprises molybdenum (Mo) metal. 4. The solar cell manufacturing system of claim 2, wherein the young mineral film device further forms a buffer layer on the absorption. 5. The solar cell manufacturing system of claim 1, wherein the first coating device sequentially forms a back electrode layer and the absorbing layer, and the absorbing layer is located above the back electrode layer. 6. The solar cell manufacturing system of claim 5, wherein the back electrode layer comprises molybdenum metal. 7. The solar cell manufacturing system of claim 5, wherein the first coating device further forms a buffer layer over the absorbing layer. The solar cell manufacturing system of claim 1, wherein the connection t" has an external electrode, the external electrode and the transparent electrode layer, wherein the solar cell manufacturing system of the eighth aspect, wherein An anti-reflection layer, and the second ore deposit forms the transparent electrode layer on the anti-reflection layer. The solar cell manufacturing method according to claim 9 of the patent application, The second mineral film device further forms a buffer layer in the battery manufacturing system of the above-mentioned ninth item, wherein the A20) electrical layer comprises a sauerium-doped zinc layer ( ZnO: A solar cell manufacturing system, wherein the layer, and the second layer, further comprises an intrinsic zinc oxide (intrinsic Zn0, i-Zn0), the bei oxidized layer is located in the aluminum heavily doped zinc oxide The solar cell manufacturing system of claim 8, wherein the anti-reflection layer and the transparent electrode layer are in the solar cell manufacturing system of the fourteenth aspect, wherein the film device further forms a buffer layer The transparent electrode layer 15. The solar cell manufacturing system, wherein the electrode layer comprises an aluminum heavily doped zinc oxide layer. 16. The patent application scope of about 5 solar transparent electrode layers, Will be one (four) a few pure tables n, dead eight in the layer is located in the __= layer;! oxygen layer, and _ zinc oxide 9, 10, 11, 12, 13, 201121084 as described in the scope of claim 1 The solar energy device 17 includes: a battery manufacturing system, wherein the positioning module performs a positioning process on the second substrate, and according to the positioning pair, the brother-substrate and positioning information; and the sequence-executing result output a laminating module connecting the fixed interest, performing a level sequence, and (4) combining the positioning information substrate, wherein the first surface faces the first substrate and the second 18, as described in claim 17 The locating program includes the program of the first substrate and the second substrate, and the position control (EPC) of the second substrate is </ RTI> </ RTI> </ RTI> The rigid sequence includes heating the first substrate and the crucible a substrate to a first &amp; production, and according to the positioning information, the first substrate and the second substrate are combined with the second substrate: the solar cell manufacturing system according to claim 1, The absorbing layer comprises a p-type semiconductor. The solar cell manufacturing system of claim 1, wherein the transparent conductive layer comprises an N-type semiconductor. The solar cell manufacturing system of claim 2, wherein the absorption layer is derived from a copper beryllium (CuInSe2), copper indium bismuth (CuInS2), copper gallium disulfide (CuGaS2), and copper gallium diselide ( Among the group of CuGaSe2) and copper indium gallium diselide (CIGS), one or more of them are formed. 23. The solar cell manufacturing system of claim 1, wherein the second substrate is a transparent substrate. 24. A solar cell manufacturing method comprising the steps of: 201121084 opening &gt; forming an absorber layer on a first substrate, the first substrate having a first surface and a second surface, and The absorbing layer is located on the first surface; forming a transparent electrode layer on a second substrate, the second substrate has a third surface and a fourth surface, and the transparent electrode layer is located on the third surface And bonding the first substrate and the second substrate, wherein the first surface faces the third surface. The method of manufacturing a solar cell according to claim 24, wherein in the step of forming the absorbing layer on the first substrate, the first substrate has a back electrode layer, and the absorbing layer is formed. Above the back electrode layer. The method of manufacturing a solar cell according to claim 25, wherein the back electrode layer comprises ruthenium (Mo) metal. 27. The method of fabricating a solar cell of claim 25, further comprising the step of: forming a buffer layer over the absorber layer. The method of manufacturing a solar cell according to claim 24, wherein in the step of forming the absorbing layer on the first substrate, the method further comprises the step of: forming a back electrode layer on the first Above a substrate; and forming the absorber layer over the back electrode layer. The method of manufacturing a solar cell according to claim 28, wherein the back electrode layer comprises molybdenum metal. 30. The solar cell manufacturing method of claim 28, further comprising the steps of: forming a buffer layer over the absorber layer. 20 201121084 31, 32, 33, 34, 35, • 36, 37, 38. The method for manufacturing the solar cell according to claim 24, the step of forming the transparent electrode layer on the second substrate The external electrode of the external electrode is electrically connected to the transparent electrode layer. The solar cell manufacturing method according to claim 31, wherein the transparent electrode layer is on the second substrate, the substrate is two layers (-ion(four)' and the transparent electrode layer The method for manufacturing a solar cell according to claim 32, further comprising the steps of: forming a buffer layer on the absorbing layer. The method for manufacturing a solar cell according to the invention, wherein the ατΊ electrode layer comprises a solar cell manufacturing method according to the (4)-doped zinc oxide layer (Zn0: A1, AZ(J) 0 ϋ, her 11th item, Wherein the electrode layer further comprises an intrinsic ZnO (i-ZnO) layer and the intrinsic oxidized contact is located on the slit-doped purified zinc layer. The solar cell described in Item 31 of the ttr patent The manufacturing method, wherein the step of forming the transparent electrode layer on the second substrate further comprises: forming the 7 anti-reflection layer on the second substrate; and forming the transparent electrode layer on the anti-reflection Above the layer. Solar energy as described in Article 36 of the patent scope The battery manufacturing method further comprises the steps of: forming a buffer layer on the transparent electrode layer, wherein the solar cell manufacturing method according to claim 36, wherein the 21 201121084 is in the moon electrode layer A solar cell manufacturing method in which a layer is located in the "doped zinc oxide layer" and the essential zinc oxide 40, the solar cell manufacturing method described in the 'tim=24 item In the transition between the substrate and the second substrate, the method further comprises the following steps: II and a clamping program 'for aligning the first substrate with the second substrate; performing the result according to one of the programs, performing a laminating process for a two-sided substrate and a second substrate, wherein the first surface faces the solar cell manufacturing method described in 41, Lifan '4G, wherein the execution of the niche is further The method includes the following steps: Performing the base-based redemption (edge position contro EPC), and the method for manufacturing a solar cell according to the fourth aspect, wherein the step of performing the lamination process is performed Money, more The method comprises the steps of: heating the first substrate and the second substrate to a temperature of the first substrate; and pressurizing and bonding the first substrate and the first substrate according to the recording result of the predetermined order. The solar cell manufacturing method of claim 41, wherein the absorbing layer comprises a p-type semiconductor, 44, and the method for manufacturing a solar cell according to claim 24 The transparent conductive layer comprises an N-type (N-tyPe) semiconductor, wherein the solar cell manufacturing method according to claim 24, wherein the 22 201121084 absorption layer is derived from copper indium diselenide (CuInSe2), One or more of the group consisting of copper indium disulfide (CuInS2), copper gallium disulfide (CuGaS2), copper gallium bismuth (CuGaSe2), and copper indium gallium dichloride (CIGS). The method of manufacturing a solar cell according to claim 24, wherein the second substrate is a transparent substrate. twenty three