201120976 六、發明說明： 【發明所屬之技術領域】 本發明提供-㈣黯洗裝置和清洗方式，種使用不同流 速之清洗液來分別沖洗晶κ巾心和晶__清洗裝置和清洗方 式。 ® 【先前技術】 半導體裝置乃是由半導體晶_紐做理操細製得。這些操 作匕3有諸如摻質植入、閘極氧化物產生、層間介電層形成、金屬 化沉積 '線路圖案化、餘刻操作、化學機械化研磨(cMp)等等。通 常在化學機械化研磨、_、或光阻顯影之後，晶圓表面會有殘留 物餘留，如化學液體成分或是化學聚合物，因此，為了保持晶圓表 鲁面之清潔，需要適當地對晶圓施予洗淨處理。通常係利用液體喷麗 裝置’使用-沖洗液體’如特定之洗淨液或是去離子水進行沖洗處 里的七序以移除彳 在晶圓上的化學液體成分或是化學聚合物， 並且經由旋轉將晶圓表面的殘留物和沖洗液體甩離晶圓表面。 省头s曰BU洗I置包含有—贿内含㈣喷灑設備，—液體供給 系統内含複數個輸送線以及設於其下側之複數個直線型喷嘴 (straight順le) ’―驅動裝置用來帶動賴運動。然而，習知清洗裝 置-面旋轉且-面從直線型料供給清洗液歧行洗淨之方法 201120976 中，會使位於外圍的晶圓表面上的清洗液產生亂流，造成於晶圓中 心被洗淨去除之物質殘留於外_晶圓表面上之問題，並且於晶圓 外圍產缺陷或是水痕。 因此導致該•洗製€的效果大打折扣，勢必連帶影響到後續各項 製程的良率，是以如何完全洗淨晶圓，避免殘留物以及賴和水痕，、 實為一刻不容缓的重要課題。 【發明内容】 根據本發明之-較佳實施例，本發明提供—種晶圓清洗裝置，包 含：-平台’用以承載-晶圓’晶圓具有—待洗表面、—第一喷嘴 設於晶圓之上方，前述之第-喷嘴與晶圓之待洗表面之間具有」第 -高度以及-第二噴嘴設於晶圓之上方，第二噴嘴與晶圓之待洗表 面之間具有-第二高度’其中第—高度小於第二高度。 根據本發明之另-較佳實施例’本發明提供—種日日日圓清洗農置， 包a.平台，用以承載一晶圓以及一喷嘴設於晶圓之上方， 之喷嘴包含複數觸口，其巾各賴口和前述之晶圓之—待洗^ 之距離隨著各該開口相對於晶圓的位置而改變。 、 、根據本發明之又-較佳實_，本發明提供—種純清洗 首先提供L包含-待洗表面和至少—喷嘴位於晶圓上方，糾· 旋轉晶圓，並域由噴嘴_—清洗液沖洗前述之待絲面，_ 具有-噴齡數，賴參數為喷仙對於·之位置之函數。、 根據本發明之再-較佳實賴，本發明提供—種晶圓清洗方式： 201120976 一種晶圓清洗方式：首先，提供―晶圓包含 含複數個開π位於晶圓上方以及旋轉晶圓，並且如各：噴嘴包 麗-清洗液沖洗待洗表面，各該開口各財—賴 ，:口各噴 為各該開口相對於該晶圓之位置之函數。、彡，、灑參數 本發_舰在於料具有—倾麵，此倾參數㈣嘴 兴曰曰圓之位置之函數或是喷嘴上之開σ相對於晶圓之位置 舉例而言’當嘴嘴在水平方向的位置不叫，由各個喷嘴喷出的主 、Γ液之種類、清洗液和氡體混合之比例和清洗‘ 派其中—會不相同。例如，當晶圓進入清洗時，晶圓中心和晶 圓邊緣所接受到噴嘴噴出清洗液，其流速不同，則清洗液在沖洗殘 留物之後，可較順利地連同殘留物—起離開晶圓表面。 實施方式】 、第1圖繪示的是根據本發明之第—較佳實施例緣示的晶 圓清洗裝置。如第1圖所示，一晶圓清洗裝置10包含-殼體12 其包含一内搶14，在内檢14 Α 隹π艙14之底部設有一平台16，用以承第 並旋轉-晶圓18，其中晶圓18具有—待洗表面2g ;⑽14可為 ’皿度壓力等參數X到控制的環境或為—開放式空間，而平 台^可湘真空吸引、靜電吸引核械捉取方式將晶圓18 口疋於平cr 16上。—第—輸送管22，設於峨14之上側，一第 -噴嘴24設於p輸送管22之末端並錄靠近晶圓18中心之上 方’ -第二輸送管26 ’亦設於⑽14之上側，—第二喷嘴^設於 201120976 第二輸送管26之末额且姆雜第—料2 第一喷嘴W18之魏表面心間具有—第— -喷嘴28與晶圓之待洗表面2G之間具有—第二高度a得主立 =第二高fDl小於第二咖 阿又2小“分’如此-來，在兩者嘴灑之流體具有_的流速之 :，可使得由第-喷嘴24喷出之m液3G，較第二喷嘴μ 喷出之-第二清洗液32先職待洗表㈣。使得晶圓μ中 之表面殘留物可以先被第-清洗液3G沖開，接著，第二清洗液^ 則沖洗晶圓18邊緣的部分，並且可以將晶圓18中心已被第—产洗 液30沖開之表面殘留物帶往晶圓18周邊，再利用晶圓18旋轉=成 的離心力將殘留物和清洗液一起甩出。此外，為了加強清洗效果，201120976 VI. Description of the Invention: [Technical Field] The present invention provides a (four) rinsing device and a cleaning method for separately rinsing a crystal κ towel core and a crystal cleaning device and a cleaning method using cleaning fluids of different flow rates. ® [Prior Art] The semiconductor device is made of semiconductor crystal. These operations 3 include, for example, dopant implantation, gate oxide generation, interlayer dielectric layer formation, metallization deposition 'line patterning, residual processing, chemical mechanical polishing (cMp), and the like. Usually after chemical mechanized grinding, _, or photoresist development, there will be residue left on the surface of the wafer, such as chemical liquid components or chemical polymers. Therefore, in order to keep the surface of the wafer clean, it is necessary to properly The wafer is subjected to a cleaning process. Usually, the liquid spray device 'use-flush liquid', such as a specific cleaning liquid or deionized water, is used to remove the chemical liquid component or chemical polymer on the wafer, and The residue of the wafer surface and the rinse liquid are removed from the wafer surface by rotation. The provincial s曰BU wash I set contains a bribe containing (four) spraying equipment, the liquid supply system contains a plurality of conveying lines and a plurality of linear nozzles disposed on the lower side thereof ("straight") Used to drive the Lai movement. However, the conventional cleaning device-surface rotation and the surface cleaning method from the linear material supply cleaning liquid is in a method of 201120976, which causes the cleaning liquid on the surface of the peripheral wafer to be turbulent, resulting in the center of the wafer being The problem of the removed material remaining on the outer surface of the wafer and the production of defects or water marks on the periphery of the wafer. As a result, the effect of the “washing” is greatly reduced, which is bound to affect the yield of subsequent processes. It is an important issue that can completely clean the wafer and avoid residues and water marks. . SUMMARY OF THE INVENTION According to a preferred embodiment of the present invention, the present invention provides a wafer cleaning apparatus comprising: a platform for carrying a wafer, a wafer having a surface to be washed, and a first nozzle disposed on Above the wafer, there is a "first height" between the first nozzle and the surface to be washed, and a second nozzle is disposed above the wafer, and between the second nozzle and the surface to be washed of the wafer - The second height 'where the first height is less than the second height. According to another preferred embodiment of the present invention, the present invention provides a day-and-day yen cleaning farm, a platform for carrying a wafer and a nozzle disposed above the wafer, the nozzle comprising a plurality of contacts The distance between the towel and the wafer to be washed varies with the position of each opening relative to the wafer. According to the present invention - preferably, the present invention provides a pure cleaning which first provides L-to-be-washed surface and at least - the nozzle is located above the wafer, corrects and rotates the wafer, and the field is cleaned by the nozzle_- The liquid rinses the aforementioned surface to be treated, _ has the number of spray ages, and the Lai parameter is a function of the position of the spray. According to the present invention, the present invention provides a wafer cleaning method: 201120976 A wafer cleaning method: First, providing a wafer comprising a plurality of openings π above the wafer and rotating the wafer, And each of the nozzles: the cleaning solution washes the surface to be washed, and each of the openings is a function of the position of each opening relative to the wafer. , 彡, 洒, 参数 本 _ 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰 舰The position in the horizontal direction is not called, and the type of main, sputum, the ratio of the cleaning liquid and the sputum mixed by the respective nozzles, and the cleaning ratio are different. For example, when the wafer enters the cleaning, the center of the wafer and the edge of the wafer receive the nozzle to discharge the cleaning liquid at a different flow rate, and the cleaning liquid can smoothly exit the wafer surface together with the residue after the residue is rinsed. . Embodiments Fig. 1 is a view showing a crystal cleaning apparatus according to a first preferred embodiment of the present invention. As shown in FIG. 1, a wafer cleaning apparatus 10 includes a housing 12 including an inner 14 and a platform 16 at the bottom of the internal inspection 14 , 隹 舱 14 for receiving and rotating the wafer. 18, wherein the wafer 18 has a surface to be washed 2g; (10) 14 may be a parameter X such as a dish pressure to a controlled environment or an open space, and the platform ^ can be vacuum suctioned, electrostatically attracted nuclear weapon capture mode Wafer 18 is on the flat cr 16 port. - a first delivery tube 22 disposed on the upper side of the crucible 14, a first nozzle 24 disposed at the end of the p delivery tube 22 and positioned near the center of the wafer 18 - the second delivery tube 26 ' is also disposed on the upper side of the (10) 14 , the second nozzle is disposed at the end of the second delivery pipe 26 of 201120976, and the second surface of the second nozzle W18 has a -first - between the nozzle 28 and the surface to be washed 2G of the wafer Having - the second height a is the main = the second highest fDl is less than the second café and 2 small "minutes" so - the flow of the fluid in both mouths has a flow rate of _: can be sprayed by the first nozzle 24 The liquid liquid 3G is discharged from the second nozzle μ, and the second cleaning liquid 32 is used to wash the table (4), so that the surface residue in the wafer μ can be first washed by the first cleaning liquid 3G, and then, The second cleaning solution ^ rinses the edge of the wafer 18, and can bring the surface residue of the wafer 18 which has been washed by the first cleaning liquid 30 to the periphery of the wafer 18, and then rotates with the wafer 18 The centrifugal force pulls the residue together with the cleaning solution. In addition, in order to enhance the cleaning effect,
可以藉由加_方式，再使第-清洗液Μ之流輸第二清洗液D 之流速大0.1公升/分鐘。雖然在此實施例中第一輸送管^與第 送管26分職給第—喷嘴24與第二噴嘴28，但在本發明的並他^ 施例中第-噴嘴24料二噴嘴28可__輪钱供給相同的清 洗液。 第2圖是根據本發明之第—較佳實施例所繪示的晶圓旋轉方向及 清洗液沖洗方式之上視圖。如第丨圖和第2 _示，在第—清洗液 3〇喷出時會形成-第面積&覆蓋部分之待洗表面/而第 二清洗液32喷出時會形成—第二面積a2覆蓋部分之待洗表面 2〇,第-倾面積Al和第二噴灑&面積之大小可個別獨立地調整。 較佳的情況下，第-__Αι和第二倾面積A〗為前後交錯設 置’也就是說，第一噴灑面積八】和第二喷灑面積、不在晶圓Μ之 201120976 同一半徑。此外，第〜 18旋轉時，第-嘴灑面積啊亦覆蓋圓心。當晶圓 上形成-麵形的第00圓18_ —圈之後，於晶圓18 形成-個環形的第二清洗面B 1❿第—噴灑面積A2在晶圓18上 在進行清洗時，晶圓〗 時針旋轉，當旋轉時，aa圓預定方向34，例如順時針或逆 經過第-賴_Αι，再經過第 《喊點Q會先 是要讓晶圓18在旋轉時 、' 2。如此設計的目的 寻’位於晶圓18上同一條丰和卜的久p =_:?點會較離晶圓18中心較二= θθ® 18中心的殘留物混合著第-清洗液30會順著 離心力的方向流動—段距離，接著，殘留物和第-清洗液30會被後 續沖洗的第二清洗液32被帶往晶圓丨8周邊，如此，第—清洗液3〇 和第二清洗液32的流動方向即不會形成奈流可以順利地將殘留物 甩離晶圓18表面。 第-清洗液3G和第二清洗液32可以為相同或是不同的清洗液， Φ第一清洗液30和第二清洗液32可以獨立的選自去離子水、氨水或 其它化學清洗液。第一清洗液30在噴出之前可以先與一氣體36混 合’例如與氣氣或二氧化碳混合，第二清洗液32在喷出之前亦可以 先與氣體36混合。換句話說，本較佳實施例在操作時，即可以利用 混合氣體來分別加壓第一清洗液30和第二清洗液32，以調控清洗 液的流速，因此，第一清洗液30和氣體36的混合比例可以和第二 清洗液32與氣體36的混合比例不相同，其流速可以不相同，較佳 者，第一清洗液30之流速較第二清洗液32之流速大0,1公升/分鐘。 201120976 值得注意的是加壓用氣體，較佳為不參與清洗反應之氣體成分例如 氮氣，或者可使用會與清洗反應之氣體成分，藉以加壓的同時更提 升清洗效果。此外’在第-清洗液30和第二清洗液32為相同化學 溶液的情況下，其激度可以不相同，例如，第一清洗液3〇可以為 15%的氨水’第二清洗液32可以為17%的氧水。 除此之外’第3圖是根據本發明之第一較佳實施例所繪示的晶圓 旋轉方向及清洗液沖洗方式之變化型之上視圖。如第3圖所示，第 -喷凝面積A丨和第二噴灑面積a2可調整為共同覆蓋晶圓之 徑。其餘的操作條件可依第2圖中的操作條件施行。 前述之待洗表面20可以晶圓18之正面，例如晶圓^主動面 «械研賴程後、触 ___«上__清洗裝置進行清洗。依據 同的而求，可以將第-喷嘴24和第二喷嘴28固定在同一支㈣ —喷嘴24和第二喷嘴28彼此之間的相對位 也可，除了晶81 18 _方向34旋轉之外，支架38 二喷嘴2，方絲財平移動，關時平移第-她4和第 灌在於各倾具有—喷齡數，其中喷 包含喷嘴=對於晶圓之位置之函數，例如噴灑參數 、'主之_輯 '清洗液之流速、清洗液之麵、 合之咖細樣，_㈣洗液之流 會隨著喷二J Ά夜和氣體混合之比例和清洗液之濃度等均 、7、’方向相對於晶圓之位置而改變。就前述第一較佳 201120976 實施例來看，第一喷嘴24和第二喷嘴26相對於晶圓18的位置不 同，而其清洗液之流速、清洗液之種類、清洗液和氣體混合之比例 和清洗液之濃度中，至少其中之一會相異。 第4圖繪示的是根據本發明之第二較佳實施例繪示的晶圓 清洗裝置。如第4圖所示，一晶圓清洗1〇〇裝置包含一殼體112 其包含一内艙114，在内艙114之底部設有一平台116，用以 承載並旋轉一晶H 118,其中晶Μ 118具有一待洗表面12〇。一輸送 管122，設於内艙114之上側，一喷嘴124設於輸送管122之末端 且位於晶圓118之上方’並且噴嘴124包含複數個開口，如開口 152 154 156 158’各個開口和待洗表面㈣之高度隨著各 個開口相對於晶圓118的位置而改變，例如’開口 15〇和待洗表面 120之間的高度〇3，和開口 158和待洗表面12〇之間的高度队不 同。根據本發明之較佳實施例，相對位於晶圓118中心上方的 如開口 15〇會離待洗表面12〇較近，而位於晶圓ιΐ8邊緣歼口， 如開口=則會離待洗表面⑽較遠。如此—來，在相同的 下，可使得由開口 清屮夕、主、土 速之 達待洗表面⑶。此外各58出之清洗液先到 如開口 1M與其相鄰之開σ 152、丨 ^^不问，例 第二門甘丄姑 “、爷第一間距Ρ丨和— 2 第一間距ρι和第二間距Ρ2不同。 同樣地，在清洗晶圓118時，晶圓118可以往順 ^此時各個開口所噴出的清洗液 成一噴針方 :物的清洗液形成喷詢&，開:=’如 〜所有.所形成的各個面積共同覆蓋晶圓^ 201120976 之半徑。糾’輸送管122可以包含複數個歧f，分別對應連通各 個開口’因此由各個開口所噴出的清洗液可以為相同或是不同的清 洗液’清洗液可以為去離子水、氨水或其化學清洗液等。在清洗液 由各開Π在喷出之前可以先與—氣體136混合，例如轉氣或二氧 化碳混合。在操作時，可以利用混合氣體來分別加壓清洗液:調 控清洗液的流速，因此，由於各個開口喷出的清洗液和氣體的混合 二相同’其流速也可不相同。此外’各個開口噴出的清洗 =其喊可以不相同，例如，由開口 _出的清洗液可以為15% 的乳水’由開口 158噴出的清洗液可以為17%的氨水。 當然，雖然第4圖中只綸示τ —伽目户 、曰不了個具多開口之喷嘴124，根據不 同馳作需求，亦可以同時設置複數個嗔嘴，增加清洗能力。 元Unrr是=發明之第二實施例的變化型，其中相同功能的 甘使用第4圖中之標號，如第5圖所示，噴嘴m可呈一 V型， 二設有複數個開口，和第4圖中之喷嘴的不同之處在於’ 積物的物卿輪個喷灑面 :==::==r 述的晶圓清洗裝置進行清洗。在':==，上 ^之外’伽邮㈣㈣蝴=：：預定方向 數：版心㈣物-魏參 為嶽的各個開口在水平方向相對於晶圓之位 201120976 置之函數，噴灑參數包含開口和待洗表面之間的距離、清洗液之流 速、清洗液之種類、清洗液和氣體混合之比例和清洗液之濃度，換 句話說，開口和待洗表面之間的距離、清洗液之流速、清洗液之種 類、清洗液和氣體混合之比例和清洗液之濃度會隨著開口相對於晶 圓之位置而改變’就前述第二較佳實施例來看，開口 150和開口 158 在水平方向相對於晶圓118的位置不同，而其開口和待洗表面之間 的距離、清洗液之流速、清洗液之種類、清洗液和氣體混合之比例 鲁和清洗液之濃度中，至少其中之一會相異。如此，可使晶圓表面由 中％邊緣，依據不同需求，調整清洗條件，例如，在晶圓的中心用 "丨L速較快的清洗液，在晶圓的邊緣，用流速較慢的清洗液清洗。因 b在β洗曰曰圓可以避免晶圓清洗後發生殘留物殘留於晶圓上之問 題0 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所 做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖繪示的是根據本發明之第—較佳實施例㈣的晶圓清 洗裴置。 第2”的晶圓旋轉方向及清洗液沖洗方式之上視圖。 第4圖繪示的是根據本發明之第二較佳實施例繪示的晶圓清 洗裳置。 201120976 第5圖繪示的是本發明之第二實施例的變化型。 【主要元件符號說明】 10Ί00 晶圓清洗裳置 12 ' 112 殼體 14Ί14 内艙 16、116 平台 18、118 晶圓 20 > 120 待洗表面 22 第一輸送管 24 第一喷嘴 26 第二輸送管 28 第二喷嘴 30 第一清洗液 32 第二清洗液 34 預定方向 36 ' 136 氣體 38 支架 122 輸送管 124 噴嘴 150、 開口 152、 154、 156 、 158The flow rate of the second cleaning liquid D flowing through the first cleaning liquid can be increased by 0.1 liter/min by the addition method. Although the first delivery tube and the delivery tube 26 are assigned to the first nozzle 24 and the second nozzle 28 in this embodiment, in the embodiment of the present invention, the first nozzle 24 and the second nozzle 28 may be _ _Rolls supply the same cleaning solution. Figure 2 is a top plan view of the wafer rotation direction and the cleaning liquid rinsing method according to the first preferred embodiment of the present invention. As shown in the second diagram and the second embodiment, when the first cleaning liquid 3 is ejected, a -first area & covering portion of the surface to be washed/when the second cleaning liquid 32 is ejected is formed - the second area a2 The size of the surface to be washed 2 〇, the size of the first tilting area A1 and the second spray & area can be individually adjusted independently. Preferably, the first -__Αι and the second tilting area A are the front and rear staggered settings 'that is, the first spray area eight' and the second spray area, which are not the same radius of the 201120976. In addition, when the first to the 18th rotation, the first nozzle sprinkling area also covers the center of the circle. After forming a - face-shaped 00 circle 18_-circle on the wafer, a second cleaning surface B 1 is formed on the wafer 18 - the spray area A2 is being cleaned on the wafer 18, the wafer is The hour hand rotates, and when rotated, the aa circle is in a predetermined direction 34, for example, clockwise or backward through the first-deep _Αι, and then through the "calling point Q will first let the wafer 18 rotate, '2. The purpose of this design is to find that the long p = _:? point on the wafer 18 is the same as the center of the wafer 18 = θθ® 18 The residue in the center is mixed with the first cleaning liquid 30. Flowing in the direction of the centrifugal force - the distance of the segment, and then the residue and the first cleaning liquid 30 are carried to the periphery of the wafer 8 by the second cleaning liquid 32 which is subsequently washed, thus, the first cleaning liquid 3 and the second cleaning The flow direction of the liquid 32, that is, the formation of the nanoflow, can smoothly separate the residue from the surface of the wafer 18. The first cleaning liquid 3G and the second cleaning liquid 32 may be the same or different cleaning liquids, and the first cleaning liquid 30 and the second cleaning liquid 32 may be independently selected from deionized water, ammonia water or other chemical cleaning liquid. The first cleaning solution 30 may be mixed with a gas 36 prior to ejection, e.g., with air or carbon dioxide, and the second cleaning liquid 32 may be first mixed with the gas 36 prior to ejection. In other words, in the operation of the preferred embodiment, the first cleaning liquid 30 and the second cleaning liquid 32 can be separately pressurized by the mixed gas to regulate the flow rate of the cleaning liquid, and therefore, the first cleaning liquid 30 and the gas The mixing ratio of 36 may be different from the mixing ratio of the second cleaning liquid 32 and the gas 36, and the flow rate may be different. Preferably, the flow rate of the first cleaning liquid 30 is greater than the flow rate of the second cleaning liquid 32 by 0, 1 liter. /minute. 201120976 It is worth noting that the gas for pressurization, preferably a gas component that does not participate in the cleaning reaction, such as nitrogen, or a gas component that reacts with the cleaning, thereby increasing the cleaning effect while pressurizing. In addition, in the case where the first cleaning liquid 30 and the second cleaning liquid 32 are the same chemical solution, the activation may be different. For example, the first cleaning liquid 3〇 may be 15% ammonia water. The second cleaning liquid 32 may be It is 17% oxygen water. In addition, FIG. 3 is a top view of a variation of the wafer rotation direction and the cleaning liquid rinsing mode according to the first preferred embodiment of the present invention. As shown in Fig. 3, the first spray area A 丨 and the second spray area a2 can be adjusted to cover the diameter of the wafer. The remaining operating conditions can be performed in accordance with the operating conditions in Figure 2. The aforementioned surface to be washed 20 may be cleaned on the front side of the wafer 18, for example, the wafer ^ active surface, after the mechanical research, the ___« cleaning device. According to the same, the first nozzle 24 and the second nozzle 28 may be fixed in the same position (four) - the relative position between the nozzle 24 and the second nozzle 28 may be, except for the rotation of the crystal 81 18 _ direction 34, Bracket 38 two nozzles 2, square wire balance moves, off-time shifting - her 4 and the first irrigation in each tilt has - the number of sprays, wherein the spray contains nozzle = as a function of the position of the wafer, such as spray parameters, 'main _ _ 'the flow rate of the cleaning solution, the surface of the cleaning solution, combined with the coffee sample, _ (four) the flow of the washing liquid will be the same as the ratio of the mixing time of the spray and the mixing of the gas and the concentration of the cleaning solution, 7, 'direction Change with respect to the position of the wafer. In view of the foregoing first preferred embodiment 201120976, the positions of the first nozzle 24 and the second nozzle 26 are different with respect to the wafer 18, and the flow rate of the cleaning liquid, the kind of the cleaning liquid, the ratio of the cleaning liquid and the gas mixture, and At least one of the concentrations of the cleaning solution will vary. Figure 4 is a diagram showing a wafer cleaning apparatus according to a second preferred embodiment of the present invention. As shown in FIG. 4, a wafer cleaning apparatus includes a housing 112 including an inner compartment 114, and a platform 116 at the bottom of the inner compartment 114 for carrying and rotating a crystal H 118, wherein Μ 118 has a surface to be washed 12〇. A delivery tube 122 is disposed on the upper side of the inner compartment 114, a nozzle 124 is disposed at the end of the delivery tube 122 and above the wafer 118' and the nozzle 124 includes a plurality of openings, such as openings 152 154 156 158' The height of the wash surface (4) varies with the position of each opening relative to the wafer 118, such as the height 〇3 between the opening 15〇 and the surface to be washed 120, and the height between the opening 158 and the surface to be washed 12〇 different. According to a preferred embodiment of the present invention, the opening 15 相对 above the center of the wafer 118 is closer to the surface to be washed 12 ,, and is located at the edge of the wafer , 8 , such as the opening = will be away from the surface to be washed ( 10 ) Farther. In this way, under the same conditions, the surface to be washed (3) can be made clear by the opening, the main and the soil speed. In addition, each of the 58 cleaning liquids first reaches the opening σ 152, which is adjacent to the opening 1M, and 丨 ^ ^ does not ask, for example, the second door Gan Gan Gu, "the first spacing Ρ丨 and - 2 the first spacing ρι and the second spacing Similarly, when the wafer 118 is cleaned, the wafer 118 can be sterilized by the cleaning liquid sprayed from the respective openings at this time: the cleaning liquid of the object forms a squirt & Each of the formed areas collectively covers the radius of the wafer ^ 201120976. The correction tube 122 may include a plurality of manifolds f corresponding to the respective openings respectively. Therefore, the cleaning liquid sprayed from each opening may be the same or different. The cleaning liquid 'cleaning liquid can be deionized water, ammonia water or its chemical cleaning liquid, etc. The cleaning liquid can be mixed with the gas 136, such as gas or carbon dioxide, before being sprayed out. The mixed gas is used to pressurize the cleaning liquid separately: the flow rate of the cleaning liquid is regulated, and therefore, the mixing flow of the cleaning liquid and the gas ejected from each opening is the same, and the flow rate thereof may be different. In addition, the cleaning of each opening is performed. = The shouting can be different. For example, the washing liquid from the opening can be 15% of the milk. The washing liquid sprayed from the opening 158 can be 17% ammonia. Of course, although the figure 4 shows only τ. Gambling households can not find a nozzle 124 with multiple openings. According to different processing requirements, a plurality of nozzles can be set at the same time to increase the cleaning ability. Yuan Unrr is a variation of the second embodiment of the invention, wherein the same function The use of the label in Figure 4, as shown in Figure 5, the nozzle m can be a V-shaped, two with a plurality of openings, and the nozzle in Figure 4 is different in the 'materials of the accumulation Wheel spray surface: ==::==r The wafer cleaning device described is cleaned. In ':==, above ^, 'Gamous (4) (four) Butterfly =:: predetermined direction number: plate heart (four) object - Wei Each of the openings of Shen Yue is horizontally oriented relative to the position of the wafer 201120976. The spray parameters include the distance between the opening and the surface to be washed, the flow rate of the cleaning fluid, the type of cleaning fluid, and the ratio of cleaning fluid to gas mixing. And the concentration of the cleaning solution, in other words, the distance between the opening and the surface to be washed The flow rate of the cleaning liquid, the type of cleaning liquid, the ratio of the cleaning liquid to the gas mixture, and the concentration of the cleaning liquid may vary with the position of the opening relative to the wafer. As seen in the second preferred embodiment, the opening 150 and the opening 158 is different in position in the horizontal direction relative to the wafer 118, and the distance between the opening and the surface to be washed, the flow rate of the cleaning liquid, the type of the cleaning liquid, the ratio of the cleaning liquid and the gas mixture, and the concentration of the cleaning liquid, At least one of them will be different. In this way, the wafer surface can be adjusted by the middle edge and the cleaning conditions according to different requirements. For example, at the center of the wafer, the faster cleaning liquid is used in the wafer. The edge is cleaned with a slower-flowing cleaning solution. Since b is in the β-washing circle, the problem of residue remaining on the wafer after wafer cleaning can be avoided. The above is only a preferred embodiment of the present invention. Equivalent changes and modifications made in accordance with the scope of the present invention should be within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a wafer cleaning apparatus according to a first preferred embodiment (4) of the present invention. FIG. 4 is a view showing a wafer cleaning direction according to a second preferred embodiment of the present invention. FIG. 4 is a diagram showing a wafer cleaning direction according to a second preferred embodiment of the present invention. It is a variation of the second embodiment of the present invention. [Main component symbol description] 10Ί00 Wafer cleaning skirt 12' 112 Housing 14Ί14 Inner compartment 16, 116 Platform 18, 118 Wafer 20 > 120 Surface to be washed 22 A delivery tube 24 first nozzle 26 second delivery tube 28 second nozzle 30 first cleaning fluid 32 second cleaning fluid 34 predetermined direction 36 ' 136 gas 38 bracket 122 delivery tube 124 nozzle 150, openings 152, 154, 156, 158
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