201118185 AU0907039 32435twf.doc/d 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種蒸鑛程序及蒸鑛設備，且特別是 有關於一種應用於有機電致發光顯示器之蒸鍍程序及蒸鍵 設備。 【先前技術】 φ 資訊通訊產業已成為現今的主流產業，特別是可攜帶 式的各種通訊顯示產品更是發展的重點。而由於平面顯示 器是人與資訊之間的溝通界面，因此其發展顯得特別重 要。有機電致發光顯示器（Organic Light Emitting Diode, OLED)以其自發光、廣視角、省電、程序簡易、低成本、 操作溫度廣泛、高應答速度以及全彩化等等的優點，使其 具有極大的潛力，因此可望成為下一代平面顯示器之主流。 有機電致發光顯示器是一種利用有機發光材料的自 φ 發光特性來達到顯示效果的顯示器，其中依照有機發光材 料的分子量分為小分子有機電致發光顯示器（SmaU Molecule OLED，SM-OLED)與高分子電激發光顯示器 (Polymer Light Emitting Diode，PLED)兩大類。兩者之發光 結構皆是由一對電極以及有機材料層所構成。當施加直流 電壓時，電洞從陽極(an〇de)注入有機發光材料層，而電子 從陰極(cathode)注入有機發光材料層，因為外加電場所造 成的龟位差’使知電洞與電子兩種載子(carrier)在有機發光 材料層中移動並產生輻射性結合（Radiative 201118185 AU0907039 32435twf.doc/d201118185 AU0907039 32435twf.doc/d VI. Description of the Invention: [Technical Field] The present invention relates to a steaming process and a steaming plant, and in particular to an evaporation process applied to an organic electroluminescent display And steaming key equipment. [Prior Art] φ The information communication industry has become the mainstream industry today, especially the portable communication display products are the focus of development. Since the flat panel display is the communication interface between people and information, its development is particularly important. Organic Light Emitting Diode (OLED) has great advantages such as self-illumination, wide viewing angle, power saving, simple program, low cost, wide operating temperature, high response speed and full color. The potential is expected to become the mainstream of next-generation flat panel displays. The organic electroluminescent display is a display that utilizes the φ luminescence property of the organic luminescent material to achieve a display effect, wherein the molecular weight of the organic luminescent material is classified into a small molecule organic electroluminescent display (SmaU Molecule OLED, SM-OLED) and a high There are two major categories of Polymer Light Emitting Diode (PLED). Both of the light-emitting structures are composed of a pair of electrodes and an organic material layer. When a DC voltage is applied, a hole is injected from the anode into the organic light-emitting material layer, and electrons are injected from the cathode into the organic light-emitting material layer, because the turtle position difference caused by the external electric field makes the hole and the electron Two carriers move in the organic luminescent material layer and produce a radiative bond (Radiative 201118185 AU0907039 32435twf.doc/d
Recombination)。咅p 分由帝 2 a ②子黾洞再結合所放出之能量會將 娜先材枓刀子激發形成單 ==基態時，其中-定比例的能二以光二 有機電致發光顯示器的發光原理。 i光顯7^器之大型化的發展，其所面臨 致發光顯示器驗程序中所需的遮罩大小 中發光應輪11的全彩化，傳統蒸艘製程 曰的。p伤通吊品要紅、藍、 一 分別的蒸锻腔室内進行⑼;、^=先材科於二個 數目多，·腔體數:：讀的程序除了所需的遮罩 用較高的因此會導致程料間較長且費 【發明内容】 示哭種蒸鍍程序，其可解決有機電致發光顯 从製程設·職高的問題。 示器所^_、=種洛鍍設備’其可減少有機電致發光顯 、遮罩數以及蒸鍍所需的腔體數。 其首先提供基板以及提供 供蒸鍍源，：中以25；!個圖案區域。另外’提 遮if=遮罩的至少-圖案區域設置。接著，將蒸鑛 蒸鍍之間°之後’對基板進行第一次 程序。ΐ-欠ίίϊΓ 後’對基板進行第二次蒸銀 丹-人將基板轉動90度之後，對基板進行第三次蒸鍍 201118185 AU〇y〇/039 32435twf.d〇c/d 對基板進行第四次蒸鍍 程序。再次將基板轉動9〇度之後 程序。 μ本發=提出—種級減m對基板進行基鍍 私序，所述鉻鍍设備包括蒸鍍源以及蒗鍍遮 又 有多個蒸鍍區域，其中所述蒗鍍區域 =鍍源具 相同。蒸鍵遮罩上具有_圖案區 蒸鑛區域對應練遮罩的至少—個圖案區域設置。 基=上述，本發明之蒸鑛程序以及蒸錄設備可在同一 =鍍腔至中在-個基板上完成N個區域的蒸锻，以同時完 f N個面板的蒸錄序。由於不需在多個蒸鑛腔室 換，因此JT以有效減少蒸鏡程序所需的時間進而提高產能。 為讓本發明之上述特徵和優點能更明顯㈣，下文特 舉實施例，並配合所附圖式作詳細說明如下。 、 【實施方式】 。一圖1A至圖1F為根據本發明一實施例之蒸鑛程序的流 程不意圖。請先參照圖1A，首先提供一基板1〇〇以及一蒸 鍍遮罩200。基板1〇〇上具有N區域1〇2a〜1〇2d。蒸鍍遮 罩200上具有n個圖案區域2〇2a〜2〇2d。在一較佳實施例 中，上迷之N=4n，且η為〇或0以上之正整數。在本實施 例中，是以η=1，也就是Ν=4為例來說明，但其並非用以 限疋本發明。換言之，在本實施例中，蒸鍍遮罩200具有 4個圖案區域202a〜202d。 在本實施例中，此蒸鍍程序是以用於有機電致發光顯 201118185 AU0907039 32435twf.doc/d 庳明。更詳細來說’本實施例之蒸鍍程序是以 示器之有機發光層的^程序^ η但本發明不限於此，以下所述之蒸錢程序亦可以 應用於其他裝置或是其他膜層的蒸鍍。 之右Ur狀蒸鍍程序是㈣於錢電致發光顯示器 有機《光層為例來說明’蒸錢遮罩勘上的圖案設計如 圖2所不。在圖2中，蒸鑛遮罩具有四個 2〇2a〜·，其分別為第一圖案區域職、第二圖案^ 2〇2b、弟二圖案區域廳以及第四圖案區域皿心立中 第一圖案區域2G2a與第三圖案施是位於蒸鑛遮罩_ 的對角線上，且第二圖案區域2〇2b與第四圖案區域2咖 位於条鑛遮罩細的另一對角線上。上述蒸鑛遮罩上 之各圖，區域202a〜202(1内的圖案為開σ圖案，用以使蒸 鍍源之蒸㈣料可輯過這些開σ圖案而圖形化地形成在 基板100上。接著，請參照圖m，將基板1〇〇與蒸鍍遮罩 200組合在一起。在本實施例中，蒸鍍遮罩2⑻是設置於 基板100的下方。-般來說，將基板1〇〇與蒸鍍遮罩2〇〇 組合在一起的方式是透過機械手臂將基板1〇〇與蒸鍍遮罩 200組合在一起。為了顧及不損及基板100的表面或是基 板100表面上的膜層，通常基板100與蒸鍍遮罩200之間 會保持一小段距離而不直接貼合在一起。另外，為了使蒸 鍍材料能精確的鍍在基板100的特定位置，所以基板1〇〇 與蒸鐘遮罩200之間的距離越小越好。 之後，請參照圖1C，提供一蒸鍍源300，在蒸鍍遮罩 201118185 ALIUVU /039 32435twf.doc/d 200之下方，此蒸鍍源300具有蒸鍍區域3〇2a〜3〇2d。本實 施例是以4個蒸鍍區域為例來說明，但本發明不限於此。 特別是，每一個蒸鍍區域302a〜302d對應蒸鍍遮罩200的 —個圖案區域202a〜202d設置。在本實施例中，蒸鍍源300 之蒸鍍區域302a是對應蒸鍍遮罩200的圖案區域202a設 置；蒸鍍源300之蒸鍍區域302b是對應蒸鍍遮罩200的圖 案區域202b設置；蒸鍍源300之蒸鍍區域302c是對應蒸 錢遮罩200的圖案區域202c設置；蒸鍍源300之蒸鍍區域 3〇2d是對應蒸鍍遮罩2〇〇的圖案區域2〇2d設置。此外，Recombination). The energy released by the recombination of the 2p by the 2 2 2 黾 会将 will be excited by the Na 先 枓 knife to form a single == ground state, where - the ratio of the energy can be based on the principle of light-emitting organic electroluminescent display. The development of the large-scale development of the i-light display device is faced with the size of the mask required for the illumination display process. The full-colorization of the light-emitting wheel 11 is awkward. p wounds hanging goods should be red, blue, a separate steaming chamber (9);, ^ = first material in two numbers, · number of chambers:: read the program in addition to the required mask with a higher Therefore, the length of the material is long and the cost is invented. [Inventive content] The crying seed evaporation process can solve the problem of the organic electroluminescence display process. The device is used to reduce the number of organic electroluminescence, the number of masks, and the number of cavities required for vapor deposition. It first provides the substrate and provides the evaporation source, with 25:! pattern areas. In addition, the cover = if = at least - pattern area setting of the mask. Next, the substrate was subjected to the first procedure after evaporation between the vapor depositions. ΐ-Under ίίϊΓ After the second evaporation of the substrate to the substrate - after the substrate is rotated 90 degrees, the substrate is subjected to a third evaporation 201118185 AU〇y〇/039 32435twf.d〇c/d Four evaporation processes. Rotate the substrate again 9 degrees after the program.本本发=presentation-level reduction m to base plate private order, the chrome plating apparatus includes an evaporation source and a ruthenium plating layer and a plurality of evaporation regions, wherein the ruthenium plating region=plate source the same. The steaming mask has a _pattern area. The steaming area corresponds to at least one pattern area setting of the mask. Base = As described above, the steaming program of the present invention and the steaming apparatus can perform the steaming forging of N regions on the same substrate in the same plating chamber to simultaneously complete the steaming order of the N panels. Since there is no need to change in multiple steaming chambers, JT can effectively reduce the time required for the steaming process and increase productivity. The above described features and advantages of the present invention will become more apparent from the following detailed description of the embodiments of the invention. [Embodiment] 1A through 1F are flowcharts of a steaming process according to an embodiment of the present invention. Referring first to Figure 1A, a substrate 1 and an evaporation mask 200 are first provided. The substrate 1 has an N region 1 〇 2a 〜 1 〇 2d. The vapor deposition mask 200 has n pattern regions 2〇2a to 2〇2d. In a preferred embodiment, N = 4n is above and η is a positive integer of 〇 or more. In the present embodiment, η = 1, that is, Ν = 4 is taken as an example, but it is not intended to limit the present invention. In other words, in the present embodiment, the vapor deposition mask 200 has four pattern regions 202a to 202d. In this embodiment, the evaporation process is used for organic electroluminescence. 201118185 AU0907039 32435twf.doc/d. More specifically, the evaporation process of the present embodiment is a process of the organic light-emitting layer of the display, but the invention is not limited thereto, and the steaming process described below can also be applied to other devices or other layers. Evaporation. The right Ur-shaped evaporation process is (4) on the money electroluminescent display. The organic "light layer is used as an example to illustrate" the pattern design of the steam mask is shown in Figure 2. In FIG. 2, the steam mask has four 2〇2a~·, which are respectively the first pattern area, the second pattern ^2〇2b, the second pattern area hall, and the fourth pattern area. A pattern area 2G2a and a third pattern are placed on the diagonal of the vapor mask _, and the second pattern area 2〇2b and the fourth pattern area 2 are located on another diagonal line of the strip mask. In each of the above-mentioned vapor masks, the regions 202a to 202 (the pattern in 1 is an open σ pattern for patterning the evaporation source (four) material to form the σ pattern on the substrate 100. Next, referring to FIG. m, the substrate 1 is combined with the vapor deposition mask 200. In the present embodiment, the vapor deposition mask 2 (8) is disposed under the substrate 100. In general, the substrate 1 is The combination of the crucible and the vapor deposition mask 2 is a combination of the substrate 1 and the vapor deposition mask 200 through the robot arm, in order not to damage the surface of the substrate 100 or the surface of the substrate 100. The film layer is usually kept at a small distance between the substrate 100 and the vapor deposition mask 200 without being directly bonded together. In addition, in order to accurately deposit the evaporation material on a specific position of the substrate 100, the substrate 1〇〇 The smaller the distance from the steaming bell cover 200, the better. Referring now to Figure 1C, an evaporation source 300 is provided below the vapor deposition mask 201118185 ALIUVU /039 32435twf.doc/d 200. The source 300 has vapor deposition regions 3〇2a to 3〇2d. In this embodiment, four vapor deposition regions are used. Although the present invention is not limited thereto, in particular, each of the vapor deposition regions 302a to 302d is provided corresponding to one pattern region 202a to 202d of the vapor deposition mask 200. In the present embodiment, evaporation of the vapor deposition source 300 is performed. The region 302a is disposed corresponding to the pattern region 202a of the vapor deposition mask 200; the vapor deposition region 302b of the vapor deposition source 300 is disposed corresponding to the pattern region 202b of the vapor deposition mask 200; and the vapor deposition region 302c of the vapor deposition source 300 corresponds to the evaporation of money The pattern region 202c of the mask 200 is disposed; the vapor deposition region 3〇2d of the vapor deposition source 300 is disposed corresponding to the pattern region 2〇2d of the vapor deposition mask 2〇〇.
在蒸鍍源300之各蒸鍍區域3〇2a〜302d内各自設置有蒸鍍 材料306a〜306d，且此些蒸鍍材料306a〜306d不完全相同。 舉例來說’上述之蒸鍍區域3〇2a〜302c内分別設置第一顏 色条鍍材料306a、第二顏色蒸鍍材料306b與第三顏色蒸 缝材料306c。第一顏色蒸鍍材料306a例如是紅色蒸鍍材 料二第二顏色蒸鍍材料306b例如是綠色蒸鍍材料，第三顏 色游錢材料306c例如是藍色蒸鍍材料。 另外’蒸鍍區域302d内可設置第四顏色蒸鍍材料306d 二可疋不設置任何蒸鍍材料。倘若蒸鍍區域302d内有設置 第四顏色蒸鍍材料3〇6d，所述第四蒸鍍材料306d可以是 色I顏色蒸锻材料(紅色蒸鍍材料）、第二顏色蒸鍍材料(綠 _翁錢材料)與第三顏色蒸鍍材料（藍色蒸鍍材料)其中之 '根/象另—實施例，上述之第四蒸鍍材料306d可以是不 1第—顏色蒸鍍材料(紅色蒸鍍材料）、第二顏色蒸鍍材 ;〇彔色蒸鏡材料)與第三顏色蒸鍍材料（藍色蒸鍍材料)之 201118185 AU0907039 32435twf.doc/d 蒸鍍材料，其例如是白色蒸鍍材料、淺綠色蒸鍍材料、深 紅色蒸鍍材料或是其他顏色之蒸鍍材料。為了詳細說明以 使此領域技術人員瞭解本發明，本實施例是以在蒸鍍區域 302d内有設置第四顏色蒸鍍材料306d(綠色蒸鍍材料)為例 來說明。 根據本發明之一較佳實施例，為了使蒸鏡源300内之 各蒸鑛區域302a〜302d之蒸鍍材料306a〜306d於蒸鑛過程 中不彼此干擾或混雜在一起，在蒸鐘源300内可包括設置 檔板304。檔板304主要是設置於蒸鍍源300之蒸鍍區域 302a〜302d之間。檔板304之材質一般為金屬，其主要是 可以承受蒸鍍程序所需的溫度為考量。另外，此蒸鍍源3〇〇 的形式可以是點蒸艘源、線蒸鑛源或面蒸鐘源。更詳細來 說’蒸鍍源300内之各蒸鍍區域302a〜302d之蒸鍍材料 306a〜306d可以以點蒸鍍的形式蒸鍍出、以線蒸鍍的形式 蒸鍍出’或者是以面蒸鍍的形式蒸鍍出。 請繼續參照圖1C，蒸鍍遮罩200設置於基板1〇〇與 蒸鍍源300之間’進行第一次蒸鍍程序，其中蒸鍍源3〇〇 上之每一個蒸鍍區域302a〜302d對應蒸鍍遮罩200上的— 個圖案區域202a〜202d設置。在進行第一次蒸鍍程序時， ?备鍵遮罩200與基板1〇〇組合在一起之俯視示意圖如圖3八 所示。在圖3A中’蒸鍍遮罩之蒸鍍區域202a上的圖案是 對應基板的區域l〇2a設置，蒸鍍遮罩之蒸鍍區域2〇2b上 的圖案是對應基板的區域丨〇 2 b設置，蒸鍍遮罩之蒸鍍區域 202c上的圖案是對應基板的區域1〇2c設置，蒸鍍遮罩之 201118185 AUU9〇7039 32435twf.doc/d 蒸鑛區域202d上的圖案是對應基板的區域i〇2d設置。進 行第一次蒸鍍程序之後’在基板100上所形成的蒸鑛圖案 如圖4A所示。在圖4A中，在基板100的區域i〇2a〜i〇2d 中分別蒸鍍有紅、綠、藍、綠蒸鍍圖案。 之後’請繼續參照圖1D，將基板1〇〇順著ri方向轉 動90度。換言之’蒸鑛遮罩200與蒸鑛源3〇〇都固定不動， 而僅將基板100轉動90度。緊接著，對基板1〇〇進行第二 φ 次蒸鑛程序。在進行第二次蒸鐘程序時，蒸鑛遮罩2〇〇與 基板100組合在一起之俯視不意圖如圖3B所示。在圖3B 中’蒸鍵遮罩之蒸鑛區域202a上的圖案是對應基板的區域 102d設置，蒸鑛遮罩之蒸鑛區域202b上的圖案是對應基 板的區域102a設置，蒸鑛遮罩之蒸鑛區域2〇2c上的圖案 是對應基板的區域102b設置，蒸鑛遮罩之蒸鑛區域2〇2d 上的圖案是對應基板的區域102c設置。進行第二次蒸鐘程 序之後，在基板100上所形成的蒸鍍圖案如圖4B所示。 在圖4B中’在基板1〇〇的區域l〇2d、l〇2a、l〇2b、l〇2e 鲁 中分別蒸鍵有紅、綠、藍、綠蒸鏡圖案。 之後’請繼續參照圖1E ’將基板1〇〇順著R2方向再 度轉動90度。換言之’蒸鍵遮罩200與蒸链源3〇〇都固定 不動，而僅將基板100再度轉動90度。緊接著，對基板 100進行第二次蒸鐘程序。在進行第三次蒸鐘程序時，蒸 鑛遮罩200與基板1〇〇組合在一起之俯視示意圖如圖3C 所不。在圖3C中，条锻遮罩之悉鑛區域2〇2a上的圖宰是 對應基板的區域102c設置’蒸鐘遮罩之蒸錢區域2〇2b上 201118185 AU0907039 32435twf.doc/d 的圖案是對應基板的區域102d設置，蒸鍍遮罩之蒸鍍區域 202c上的圖案是對應基板的區域i〇2a設置，蒸鍍遮罩之 蒸鍍區域202d上的圖案是對應基板的區域l〇2b設置。進 行第三次蒸鍍程序之後，在基板100上所形成的蒸鍍圖案 如圖4C所示。在圖4C t，在基板100的區域l〇2c、102d、 102a、102b中分別蒸鍍有紅、綠、藍、綠蒸鐘圖案。 請繼續參照圖1F ’將基板100順著R3方向再度轉動 90度。換言之’蒸鑛遮罩200與蒸鐘源300都固定不動， 而僅將基板100再度轉動90度。緊接著，對基板1〇〇進行 第四次蒸鑛程序。在進行第四次蒸鑛程序時，蒸鍍遮罩2〇〇 與基板100組合在一起之俯視示意圖如圖3D所示。在圖 3D中，蒸鍍遮罩之蒸鍍區域202a上的圖案是對應基板的 區域102b設置，蒸鑛遮罩之蒸鑛區域2〇2b上的圖案是對 應基板的區域102c設置’蒸鍍遮罩之蒸鏡區域2〇2c上的 圖案是對應基板的區域102d設置，蒸鑛遮罩之蒸鑛區域 202d上的圖案是對應基板的區域1 〇2a設置。當進行第四 次蒸鍍程序之後，在基板100上所形成的蒸鑛圖案如圖4D 所示。在圖4D中’在基板1〇〇的區域i〇2b、l〇2c、l〇2d、 102a中分別蒸鍍有紅、綠、藍、綠蒸鐘圖案。 圖4D所示之基板100已經完成四次的蒸鍍程序，且 基板100的每一區域102a〜102d都各自蒸鍍有四種蒸鍍材 料。而由於本發明在崧鍍遮罩上作特殊的圖案設計並且搭 配蒸鍍程序之數次90度旋轉的操作方式，可使得基板1〇〇 的母一區域l〇2a〜102d的蒸鑛圖案相同。因此，在繼續進 201118185 AUuyu/039 32435twf.doc/d 行圖4D之後的製造程序之後’即完成有機電致發光顯示 器的各膜層的製造程序之後，即可將基板1〇〇進行切割步 驟’如此可以取得4片的顯示面板。換言之，根據本實施 例之方法可以在同一蒸鍍腔室中同時進行4片有機電致發 光顯示面板的有機發光層的蒸錢程序。 值得一提的是’根據本發明之一實施例，依照基板1〇〇 上之區域102a〜102d中的晝素設計的需要，當完成上述蒸 Φ 鍍程序之後，最後在基板10〇之區域102a〜102d中的圖案 具有特殊的鏡像對稱關係。換言之，在區域1〇2a中之圖案 與區域102c之圖案具有鏡像對稱的關係，且在區域1〇2b 中之圖案與區域102d之圖案具有鏡像對稱的關係。 上述實施例是在四個蒸鍵區域中都設置蒸鐘材料。 然，根據其他的實施例，倘若蒸鍍源300之第四個蒸鍍區 域302d中未设置有蒸鐘材料，則此蒸鑛程序可在進行圖 1E之步驟之後’於進行圖1F之步驟時，也就是將基板1〇〇 順著R3方向再度轉動90度之後，對基板100進行第四次 藝蒸鍍程序時，所述第四次蒸鍍程序是對設置有蒸鍍材料的 二個蒸鍍區域進行蒸鍍，而對應未設置有蒸鍍材料的第四 個蒸鑛區域302d的基板區域則不會被蒸鑛上蒸鑛材料。 上述之實施例是以基板100上具有4個區域，蒸鍍遮 罩200具有4個蒸鍍區域(N=4)，且蒸鍍源3〇〇具有4個蒸 鍍源為例來說明。然，本發明不限於此，在本發明中，上 述之N=4n ’且η為〇或〇以上之正整數。因此根據本發明 之其他實施例，基板1〇〇上可具有16個區域，蒸鍍遮罩 201118185 AU0907039 32435twf.doc/d 200可具有16個蒸鍍區域(N=42)，且蒸鍍源3〇〇具有4個 条鍍源。如圖5所示’其是根據本發明另一實施例之蒸鍍 遮罩的不意圖。在圖5中，蒸鍍遮罩400具有圖案區域 402a〜402d’且每一圖案區域4〇2a〜4〇2d又可進一步分為4 個圖案區域。以圖案區域4〇2a為例，圖案區域4〇2a内可 進一步分成圖案區域401a〜401d。然，在此實施例中，每 一，案區域402a〜402d是對應蒸鍍源的一個蒸鍍區域(一 種蒸鍍材料）’因此在同一個圖案區域402a内的四個圖案 區域401a〜4〇ld都是對應蒸鍍源的一個蒸鍍區域(一種蒸 鑛材料）。 而以圖5之蒸鍍遮罩搭配如圖1A至圖1F所述之蒸鏡 程序，在基板上所形成的蒸鍍圖案如圖6所示。在圖6中， 基板5〇〇具有區域5〇2a〜502d，且每一區域502a〜502d又 了進步为為4個圖案區域。以區域5〇2a為例，區域5〇2a 内可進一步分成區域5〇la〜5〇ld。類似地，圖6所示之基 板5〇〇是完成四次的蒸鍍程序的結構。由於本發明在蒸鍍 ，罩上作特殊的圖案設計並且搭配蒸鍍程序之數次90度 方疋轉，操作方式，可使得基板500的每-區域5〇2a〜5〇2d =及每一區域5〇2a〜502d内之區域(5〇ia〜5〇ld)的蒸鍍圖 =相同。因此，在繼續進行圖6之後的製造程序之後，即 70成有機電致發光顯示器的各膜層的製造程序之後，即可 :基板jGG進行切割步驟，如此可以取得16片的顯示面 。士換s之，根據本實施例之方法可以在同—蒸鍍腔室中 5 τ進行16片有機電致發光顯示面板的有機發光層的蒸 12 201118185 AU09U7039 32435twf.doc/d 鍍程序 —綜^賴，本發明之蒸鍍程序叹綠設備可在同— 中在—個基板上完成N個區域的蒸鐘，以同時完 示面板^蒸鑛程序。由於不需在多個蒸鐘腔室令 =換’因此可以有效減少麵程序所f的時間進而提高產 固—，是將基板縣、紐料和蒸錢源都The vapor deposition materials 306a to 306d are provided in each of the vapor deposition regions 3〇2a to 302d of the vapor deposition source 300, and the vapor deposition materials 306a to 306d are not completely identical. For example, the first color strip plating material 306a, the second color vapor deposition material 306b, and the third color steaming material 306c are respectively disposed in the vapor deposition regions 3〇2a to 302c described above. The first color evaporation material 306a is, for example, a red vapor deposition material 2, the second color evaporation material 306b is, for example, a green vapor deposition material, and the third color money release material 306c is, for example, a blue vapor deposition material. Further, a fourth color evaporation material 306d may be disposed in the vapor deposition zone 302d, and no vapor deposition material may be provided. If the fourth color evaporation material 3〇6d is disposed in the vapor deposition zone 302d, the fourth vapor deposition material 306d may be a color I color evaporation material (red evaporation material), and a second color evaporation material (green_翁钱材料) and the third color evaporation material (blue evaporation material) of which the 'root/image another embodiment, the above fourth evaporation material 306d may be not a first color evaporation material (red steaming 201118185 AU0907039 32435twf.doc/d of a plating material), a second color evaporation material; a blue color evaporation material) and a third color evaporation material (blue evaporation material), which is, for example, white vapor deposition Material, light green evaporation material, deep red evaporation material or other color evaporation materials. In order to explain in detail to the skilled person in the art, the present embodiment is described by taking a fourth color evaporation material 306d (green evaporation material) in the vapor deposition zone 302d as an example. According to a preferred embodiment of the present invention, in order to prevent the vapor deposition materials 306a to 306d of the respective vaporized regions 302a to 302d in the vapor source 300 from interfering with or intermingling each other during the steaming process, the steam source 300 is provided. A set baffle 304 can be included therein. The shutter 304 is mainly disposed between the vapor deposition regions 302a to 302d of the vapor deposition source 300. The material of the baffle 304 is generally metal, which is mainly considered to be able to withstand the temperature required for the evaporation process. In addition, the vapor deposition source 3〇〇 may be in the form of a point steam source, a line steam source or a surface steam source. More specifically, the vapor deposition materials 306a to 306d of the respective vapor deposition regions 302a to 302d in the vapor deposition source 300 may be deposited by vapor deposition in the form of a vapor deposition or in the form of a line vapor deposition. The vapor deposited form is evaporated. Referring to FIG. 1C, the vapor deposition mask 200 is disposed between the substrate 1 and the vapor deposition source 300 to perform a first vapor deposition process, wherein each of the vapor deposition regions 302a to 302d on the evaporation source 3 is formed. Corresponding to the pattern areas 202a to 202d on the vapor deposition mask 200 are provided. When the first vapor deposition process is performed, a schematic top view of the combination of the key mask 200 and the substrate 1 is shown in FIG. In FIG. 3A, the pattern on the vapor deposition region 202a of the vapor deposition mask is disposed in the region l〇2a corresponding to the substrate, and the pattern on the vapor deposition region 2〇2b of the vapor deposition mask is the region corresponding to the substrate 丨〇2 b It is provided that the pattern on the vapor deposition region 202c of the vapor deposition mask is disposed in the region 1〇2c corresponding to the substrate, and the pattern on the vapor deposition mask 201118185 AUU9〇7039 32435twf.doc/d is the region corresponding to the substrate. I〇2d settings. The steaming pattern formed on the substrate 100 after the first vapor deposition process is as shown in Fig. 4A. In FIG. 4A, red, green, blue, and green vapor deposition patterns are deposited in the regions i〇2a to i〇2d of the substrate 100, respectively. Thereafter, please continue to refer to Fig. 1D to rotate the substrate 1 90 90 degrees in the ri direction. In other words, the 'mineering mask 200 and the source 3 are fixed, and only the substrate 100 is rotated by 90 degrees. Next, the substrate 〇〇 is subjected to a second φ steaming process. When the second steaming process is performed, the top view of the vapor mask 2〇〇 combined with the substrate 100 is not intended to be as shown in Fig. 3B. In Fig. 3B, the pattern on the steaming area 202a of the steaming key mask is set in the area 102d corresponding to the substrate, and the pattern on the steaming area 202b of the steaming mask is set in the area 102a corresponding to the substrate, and the steam mask is placed. The pattern on the steaming zone 2〇2c is set in the region 102b corresponding to the substrate, and the pattern on the steaming zone 2〇2d of the vapor mask is set in the region 102c corresponding to the substrate. After the second steaming step, the vapor deposition pattern formed on the substrate 100 is as shown in Fig. 4B. In Fig. 4B, red, green, blue, and green vapor mirror patterns are respectively steamed in the regions l〇2d, l〇2a, l〇2b, and l〇2e of the substrate 1〇〇. Thereafter, please continue to turn the substrate 1 turns 90 degrees in the R2 direction with reference to Fig. 1E'. In other words, the steaming key mask 200 and the steaming chain source 3 are both fixed, and only the substrate 100 is rotated by 90 degrees. Next, the substrate 100 is subjected to a second steaming process. In the third steaming process, a top view of the combination of the vapor mask 200 and the substrate 1 is shown in Figure 3C. In Fig. 3C, the pattern on the mining area 2〇2a of the strip forging mask is the area 102c of the corresponding substrate. The pattern of the steaming area of the steaming mask 2〇2b is 201118185 AU0907039 32435twf.doc/d is The region 102d corresponding to the substrate is disposed, the pattern on the vapor deposition region 202c of the vapor deposition mask is disposed in the region i〇2a corresponding to the substrate, and the pattern on the vapor deposition region 202d of the vapor deposition mask is set in the region l〇2b corresponding to the substrate. . After the third vapor deposition process, the vapor deposition pattern formed on the substrate 100 is as shown in Fig. 4C. In FIG. 4C t, red, green, blue, and green steam bell patterns are vapor-deposited in the regions l〇2c, 102d, 102a, and 102b of the substrate 100, respectively. Please continue to rotate the substrate 100 by 90 degrees in the R3 direction with reference to Fig. 1F'. In other words, both the steam mask 200 and the steam source 300 are stationary, and only the substrate 100 is rotated 90 degrees again. Next, a fourth steaming process was performed on the substrate 1〇〇. In the fourth steaming process, a top view of the vapor deposition mask 2〇〇 combined with the substrate 100 is shown in Fig. 3D. In FIG. 3D, the pattern on the vapor deposition region 202a of the vapor deposition mask is disposed in the region 102b corresponding to the substrate, and the pattern on the vapor deposition region 2〇2b of the vapor mask is set to the vapor deposition mask of the region 102c corresponding to the substrate. The pattern on the vapor-shielding region 2〇2c of the cover is provided in the region 102d corresponding to the substrate, and the pattern on the vapor-salting region 202d of the vapor-salt mask is disposed in the region 1〇2a corresponding to the substrate. After the fourth vapor deposition process, the vapor pattern formed on the substrate 100 is as shown in Fig. 4D. In Fig. 4D, red, green, blue, and green steam bell patterns are vapor-deposited in the regions i 〇 2b, l 〇 2c, l 〇 2d, and 102a of the substrate 1 分别, respectively. The substrate 100 shown in Fig. 4D has been subjected to four vapor deposition processes, and each of the regions 102a to 102d of the substrate 100 is vapor-deposited with four kinds of vapor deposition materials. However, since the present invention has a special pattern design on the ruthenium plating mask and a plurality of 90-degree rotation operation modes of the evaporation process, the evaporation pattern of the mother-side regions l〇2a to 102d of the substrate 1〇〇 can be made the same. . Therefore, after proceeding to the manufacturing procedure after the image of FIG. 4D in 201118185 AUuyu/039 32435 twf.doc/d, that is, after the manufacturing process of each film layer of the organic electroluminescence display is completed, the substrate 1 can be subjected to a cutting step. In this way, four display panels can be obtained. In other words, according to the method of the present embodiment, the evaporation process of the organic light-emitting layer of the four organic electroluminescence display panels can be simultaneously performed in the same vapor deposition chamber. It is worth mentioning that, according to an embodiment of the present invention, in accordance with the design of the halogen design in the regions 102a to 102d on the substrate 1 after the completion of the above-described vapor deposition process, the region 102a of the substrate 10 is finally completed. The patterns in ~102d have a special mirror symmetry relationship. In other words, the pattern in the area 1〇2a has a mirror symmetrical relationship with the pattern of the area 102c, and the pattern in the area 1〇2b has a mirror symmetrical relationship with the pattern of the area 102d. The above embodiment is to provide a steaming material in all of the four steaming key regions. However, according to other embodiments, if the vapor deposition material is not disposed in the fourth vapor deposition zone 302d of the evaporation source 300, the steaming process may be performed after the step of FIG. 1E is performed. That is, when the substrate 1 is rotated 90 degrees in the R3 direction and the fourth art evaporation process is performed on the substrate 100, the fourth vapor deposition process is two steaming with the vapor deposition material. The plated region is vapor-deposited, and the substrate region corresponding to the fourth vapor-deposited region 302d not provided with the vapor-deposited material is not vaporized by the vaporized material. The above embodiment is described by taking four regions on the substrate 100, the vapor deposition mask 200 having four vapor deposition regions (N = 4), and the vapor deposition source 3 having four vapor deposition sources as an example. However, the present invention is not limited thereto, and in the present invention, N = 4n ' and η is a positive integer of 〇 or 〇 or more. Therefore, according to other embodiments of the present invention, the substrate 1 may have 16 regions, and the vapor deposition mask 201118185 AU0907039 32435twf.doc/d 200 may have 16 vapor deposition regions (N=42), and the evaporation source 3 〇〇 has 4 strips of plating source. As shown in Fig. 5, it is a schematic view of an evaporation mask according to another embodiment of the present invention. In Fig. 5, the vapor deposition mask 400 has pattern regions 402a to 402d' and each of the pattern regions 4〇2a to 4〇2d can be further divided into four pattern regions. Taking the pattern area 4〇2a as an example, the pattern area 4〇2a can be further divided into pattern areas 401a to 401d. However, in this embodiment, each of the case areas 402a to 402d is a vapor deposition area (a vapor deposition material) corresponding to the evaporation source 'and thus four pattern areas 401a to 4 in the same pattern area 402a. Ld is an evaporation zone (a type of vaporized material) corresponding to the evaporation source. The vapor deposition pattern formed on the substrate is shown in Fig. 6 by the vapor deposition mask of Fig. 5 in combination with the vapor deposition mirror shown in Figs. 1A to 1F. In Fig. 6, the substrate 5A has regions 5〇2a to 502d, and each of the regions 502a to 502d is further developed into four pattern regions. Taking the region 5〇2a as an example, the region 5〇2a can be further divided into regions 5〇la~5〇ld. Similarly, the substrate 5 shown in Fig. 6 is a structure in which the vapor deposition process is completed four times. Since the present invention is subjected to vapor deposition, a special pattern design on the cover and a 90-degree turn with the evaporation process, the operation mode can be made such that each region of the substrate 500 is 5〇2a~5〇2d = and each The vapor deposition patterns of the regions (5〇ia to 5〇ld) in the regions 5〇2a to 502d are the same. Therefore, after the manufacturing process after Fig. 6 is continued, i.e., after the manufacturing process of each film layer of the organic electroluminescence display, the substrate jGG can be subjected to the dicing step, so that 16 display faces can be obtained. According to the method of the present embodiment, the evaporation of the organic light-emitting layer of 16 organic electroluminescent display panels can be carried out in the same vapor deposition chamber by 5 τ 12 201118185 AU09U7039 32435twf.doc/d plating procedure - comprehensive ^ Lai, the vapor deposition program of the present invention can complete the steaming of N regions on the same substrate in the same manner to simultaneously complete the panel steaming process. Since it is not necessary to make a change in a plurality of steaming chambers, it is possible to effectively reduce the time of the surface program and thereby improve the production--the substrate county, the new material and the steaming source are both
=财式進行，在實際制上，也可以是將基板固 ^轉動減遮罩和驗源的方式進行，只要是基板盘轉 動療鑛遮罩和紐關有相_位移_即可 不限定。 +知亚 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明’任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範_，當可作些許之更動與潤飾，故本 發明之保魏圍當視伽之_料概麟界定者為準。 【圖式簡單說明】 圖1Α至圖1F是根據本發明一實施例之蒸鍍程序的流 程示意圖。 圖2是根據本發明一實施例之蒸鍍遮罩的示意圖。 一圖3A至圖3D分別是對應圖ic至圖1F之蒸鍍程序 的示意圖。 …、又 圖4A至圖41)分別是圖3A至圖31)之蒸鍍程序之後 的基板上視示意圖。 13 201118185 AU0907039 32435twf.doc/d 圖5是根據本發明一實施例之蒸鍍遮罩的示意圖。 圖6是利用圖5之蒸鎪遮罩進行蒸鍍程序之後的基板 上視示意圖。 【主要元件符號說明】 100、500 :基板 102a〜102d、502a〜502d、501a〜501d :區域 200、400 :蒸鍍遮罩 202a〜202d、402a〜402d :圖案區域 300 :蒸鍍源 302a〜302d :蒸鍵區域 304 ;檔板 306a〜306d :蒸鑛材料 R1〜R3 :方向= The financial system is carried out. In actual production, it is also possible to carry out the method of solid-rotating the substrate and reducing the mask and the source. As long as the substrate disk is rotated, the therapeutic mask and the button have a phase _ displacement _ which is not limited. The present invention has been disclosed in the above embodiments, but it is not intended to limit the invention to those of ordinary skill in the art, and may be modified and modified without departing from the spirit and scope of the invention. Therefore, the Weiwei of the present invention is subject to the definition of the gamma. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A to Fig. 1F are schematic diagrams showing the flow of an evaporation process according to an embodiment of the present invention. 2 is a schematic illustration of an evaporation mask in accordance with an embodiment of the present invention. 3A to 3D are schematic views respectively corresponding to the vapor deposition process of Figs. 1 to 1F. Fig. 4A to Fig. 41) are schematic top views of the substrate after the vapor deposition process of Figs. 3A to 31), respectively. 13 201118185 AU0907039 32435twf.doc/d Figure 5 is a schematic illustration of an evaporation mask in accordance with an embodiment of the present invention. Fig. 6 is a top plan view of the substrate after the vapor deposition process is performed using the dip mask of Fig. 5. [Description of main component symbols] 100, 500: substrates 102a to 102d, 502a to 502d, 501a to 501d: regions 200, 400: vapor deposition masks 202a to 202d, 402a to 402d: pattern region 300: evaporation sources 302a to 302d : steaming key zone 304; baffles 306a to 306d: steaming material R1 to R3: direction
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