201117309 六、發明說明： 【發明所屬之技術領域】 本發明係關於可於太陽電池之期望區土或中高#度評估局 部之光電轉換效率之評估方法及評估震置。 【先前技術】 而言，近年來太陽電池日益受到 以利用矽單結晶之太陽電池其每 由能量有效利用之觀點 廣泛且普遍地利用。尤其 單位面積之能量轉換效率優良。但另一方面，矛丨!用矽單結 晶之太陽電池由於使用將妙單結晶錢切片之石夕晶圓，因此 錠之製造需花費大量能量，製造成本高。尤其要實現在室 外等設置大面積太陽電池之情形中，若利用⑦單結晶製造 太陽電池，就現狀而言相當地花費成本。因此，利用可更 低價製造之非晶質(非晶態)矽薄膜之太陽電池正作為低成 本之太陽電池而普及。 非晶質石夕太陽電池係使用以P型與„型石夕膜央持接收光則 產生電子與電洞之非晶質石夕膜㈣）之稱作pin接合之層構 造之半導體膜。於該半導體膜之兩面分別形成有電極。利 用太陽光而產生之電子與電洞會因P型、η型半導體之電位 差而活躍移動，在此其連續重複下於兩面之電極產生電位 差。 作為如此非曰曰曰質石夕太陽電池之具體構纟，例㈣用於玻 璃基板上將 TCO(Transparent Conductive 0xide，透明導電 氧化物）等透明電極作為下部電極而成膜’且於其上形成 有包含非晶質矽之半導體膜、成為上部電極之“薄膜等。 150375.doc 201117309 具備包含如此之上下電極與半導體膜之光電轉換體之非 晶質矽太陽電池’若僅於基板上以廣面積均一地成膜各 層，會有電位差變小、電阻值變大之問題。因此，例如藉 由形成將光電轉換體依每特定尺寸電性區劃之區劃元件， 且將互相鄰接之區劃元件彼此電性連接，藉此構成非晶質 矽太陽電池。 具體言之，採用以下構造：在以廣面積均一形成於基板 上之光電轉換體上，使用雷射光等形成稱作劃刻線（劃線） 之溝槽，獲得多數個短條狀的區劃元件，將該區劃元件彼 此電性串聯連接。 但，如此結構之薄膜矽太陽電池中，已知在製造階段會 產生若干結構缺陷。例如，可能會於非晶質矽膜成膜時混 入顆粒或產生針孔，而導致上部電極與下部電極局部短 路。另，於基板上形成光電轉換體後，藉由劃刻線分割成 多數個區劃元件時’成為上部電極之金屬膜可能會沿著該 劃刻線炫融而到達下部電極，而料致上#電極與下部電 極局部短路^如此短路時，在與非晶質膜之面平行之方向 上，光電轉換效率會局部變化而產生分佈（偏差）。 ♦又’隨著薄膜矽太陽電池之大型化，由於成膜條件或成 膜裝置之狀態，使得在與砂膜之面平行之方向上光電轉換 效率易產生分佈，因而太陽電池之品質易產生偏差。 因此，期望開發出一種可高精度測定光電轉換效率，且 在光電轉換效率產生分佈的情形時可高精度特定該部位之 技術。 150375.doc 201117309 對此，先前已揭示一種方法，例如對太陽電池之評估對 象區域照射光，測疋此時所產生之光致發光或電致發光以 測定發光之強度分佈，而評估光電轉換效率。 另，已有揭示一種方法，其係對評估對象區域導入直流 電流’測定此時所產生之光致發光或電致發光以測定發光 強度之分佈，而評估光電轉換效率（例如參照國際公開第 2006/059615號說明書）。 但’由光致發光或電致發光測定發光強度之分佈之評估 方法中，發光強度與光電轉換效率間未必一定是定量之關 係’故有無法正確評估光電轉換效率之問題。又，存在著 在期望之區域内無法高精度評估局部之光電轉換效率之問 題。其理由一面參照圖14A、圖14B—面說明。圖14A、圖 14B係用以說明利用先前方法之光電轉換效率之評估方法 之問題之概念圖’圖14A係薄膜矽太陽電池之頂視圖，圖 14B係圖14A之II-II線之剖面圖。 先前方法中，如圖14B所示，對太陽電池10之評估對象 即基板11之區域E照射光9，測定區域e内之發光強度，由 該測定值評估區域E之光電轉換效率。但，例如於太陽電 池10中’當造成上部電極丨5與下部電極丨3局部短路之結構 缺陷A於區域E附近產生時，若於光照射時產生之電流之 一部份經過結構缺陷A ’將無法正確評估區域e内之光電 轉換效率。再者，圖14A、圖14B中，如後述符號12表示 光電轉換體，符號14表示半導體層，符號19表示劃刻線， 符號21表示區劃元件。 150375.doc 201117309 【發明内容】 本發明係鑑於上述情況而完成者，其課題係提供一種可 於薄膜石夕太陽電池之期望區域内高精度評估局部之光電轉 換效率之評估方法及評估裝置。 為解決上述問題，本發明提供如下之太陽電池之評估方 法及評估裝置。 (1) 本發明之太陽電池之評估方法包括以下步驟：準備 太陽電池，其具有：光電轉換體，其包含於基板上至少按 第一電極層、半導體層、及第二電極層之順序重疊並電性 連接之複數個區劃元件；及將前述光電轉換體中前述半導 體層及前述第二電極層除去之劃刻線；於評估對象之前述 區劃元件中，將特定區域與周邊區域絕緣（絕緣步驟）；對 巴3 .、’呈絕緣之如述特定區域之區域照射光（照射步驟）；及 測定光照射時前述特定區域之電流電壓特性（測定步驟）。 (2) 上述（1)之太陽電池之評估方法中將前述特定區域 與周邊區域絕緣時（絕緣步驟），藉由至少除去前述半導體 層及第二電極層而將絕緣線形成於前述區劃元件上，由前 述絕緣線包圍之區域可為前述特定區域。 (3) 上述（1)之太陽電池之評估方法中將前述特定區域 與周邊區域絕緣時（絕緣步驟），藉由至少除去前述半導體 層及第二電極層，而將二條絕緣線以分別跨過相鄰二條劃 刻線之方式形成於前述區劃元件上’以跨過前述二條絕緣 線之方式升’成一條絕緣線，以前述—條劃刻線及三條絕緣 線包圍之區域可為前述特定區域。 150375.doc 201117309 ⑷另’本發明之太陽電池之評估裝置，其太陽電池具 有：光電轉換體，其包含於基板上至少按第一電極層、半 導體層、及第二電極層之順序重疊並電性連接之複數個區 劃凡件；及於前述光電轉換體中將前述半導體層及前述第 一電極層除去之劃刻線；上述太陽電池之評估裝置具備. 於測定對象之前述區劃元件中’將特定區域與周邊區域絕 緣之絕緣部；對包含經絕緣之前述特定區域之區域照射光 之照射部；及測定光照射時之前述特定區域之電流電壓特 性之測定部。 & (5)上述（4)之太陽電池之評估裝置中，前述絕緣部具備 t射光源，前述照射部具備光源，前述測定部具備檢測電 流或電邀之探頭，前述雷射光源及光源及探頭分別獨立且 可於前述區劃元件上移動較佳。 ，根據本發明，可於薄时太陽電池之期望區域内高精度 評估局部之光電轉換效率。 又 【實施方式】 j下，針對本發明之太陽電池之評估方法及評估裝置之 實施形態’基於附圖進行說明。又’本實 更力:理解發明主旨而具體說明者，除非特別指，，= 限疋本發明者。另，以下說明所使用之附圖，4易於理解 本發明之特徵’有時為求方便故將要部之部份放大顯示， 各構成要素之尺寸比率等並不一定與實際相同。 <太陽電池之評估方法> 係利用本發明之評估方法之一實施形態進行評估之 150375.doc 201117309 薄膜矽型太陽電池之要部之放大立體圖。圖2A係圖丨之太201117309 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an evaluation method for evaluating the photoelectric conversion efficiency of a desired area or a medium-high evaluation of a solar cell, and an evaluation of the vibration. [Prior Art] In recent years, solar cells have been widely and widely used from the viewpoint of efficient use of energy by solar cells using single crystals. In particular, the energy conversion efficiency per unit area is excellent. On the other hand, spears! Because of the use of a single-crystal solar cell, the ingot production costs a lot of energy and the manufacturing cost is high. In particular, in the case where a large-area solar cell is installed outside the room, if a solar cell is manufactured by using 7 single crystals, it is costly in the current situation. Therefore, solar cells using amorphous (amorphous) tantalum films which can be manufactured at a lower cost are being popularized as low-cost solar cells. The amorphous Aussie solar cell uses a semiconductor film called a pin-bonded layer structure in which a P-type and a P-type film are used to receive light, and an amorphous stone film (4) of electrons and holes is generated. Electrodes are formed on both sides of the semiconductor film. Electrons and holes generated by sunlight are actively moved by the potential difference between the P-type and n-type semiconductors, and the potential difference is generated between the electrodes on both sides continuously. The specific configuration of the enamel stone solar cell, the example (4) is used for forming a transparent electrode such as TCO (Transparent Conductive 0xide) as a lower electrode on the glass substrate and forming an amorphous film thereon A thin film of a thin film, a thin film or the like which becomes an upper electrode. 150375.doc 201117309 An amorphous tantalum solar cell including a photoelectric conversion body having such a lower electrode and a semiconductor film. If the layers are formed uniformly over a wide area on a substrate, the potential difference becomes small and the resistance value becomes large. problem. Therefore, for example, an amorphous germanium solar cell is constructed by forming a zoning element electrically aligning the photoelectric conversion body with a specific size and electrically connecting the mutually adjacent dicing elements to each other. Specifically, a configuration is adopted in which a groove called a scribe line (scribe line) is formed on a photoelectric conversion body uniformly formed on a substrate by a wide area, and a plurality of short strip-shaped dicing elements are obtained. The zoning elements are electrically connected in series with each other. However, in a thin film solar cell of such a structure, it is known that a number of structural defects are generated at the manufacturing stage. For example, particles may be mixed or pinholes may be formed when the amorphous ruthenium film is formed, and the upper electrode and the lower electrode may be partially short-circuited. In addition, after the photoelectric conversion body is formed on the substrate, when the scribe line is divided into a plurality of dicing elements, the metal film that becomes the upper electrode may scatter along the scribe line to reach the lower electrode, and the material is on the surface. The electrode and the lower electrode are partially short-circuited. When the short circuit is so short, the photoelectric conversion efficiency changes locally in a direction parallel to the surface of the amorphous film to cause a distribution (deviation). ♦In addition, with the enlargement of the solar cell of the film ,, the photoelectric conversion efficiency is easy to be distributed in the direction parallel to the surface of the sand film due to the film formation conditions or the state of the film forming device, and thus the quality of the solar cell is liable to be deviated. . Therefore, it has been desired to develop a technique capable of measuring the photoelectric conversion efficiency with high precision and specifying the portion with high precision in the case where the photoelectric conversion efficiency is distributed. In this regard, a method has been previously disclosed, such as illuminating the evaluation area of the solar cell, measuring the photoluminescence or electroluminescence generated at this time to determine the intensity distribution of the luminescence, and evaluating the photoelectric conversion efficiency. Further, there has been disclosed a method of evaluating a photoelectric conversion efficiency by measuring a photoluminescence or electroluminescence generated by measuring a photocurrent or electroluminescence generated at a time when a DC current is introduced into an evaluation target region (for example, refer to International Publication No. 2006). /059615 manual). However, in the evaluation method of measuring the distribution of the luminescence intensity by photoluminescence or electroluminescence, the relationship between the luminescence intensity and the photoelectric conversion efficiency is not necessarily quantitative. Therefore, there is a problem that the photoelectric conversion efficiency cannot be correctly evaluated. Further, there is a problem that it is impossible to accurately evaluate the local photoelectric conversion efficiency in a desired region. The reason for this will be described with reference to Figs. 14A and 14B. Figs. 14A and 14B are conceptual views for explaining the problem of the evaluation method of photoelectric conversion efficiency by the prior method. Fig. 14A is a top view of a thin film solar cell, and Fig. 14B is a sectional view taken along line II-II of Fig. 14A. In the prior art, as shown in Fig. 14B, the light E is irradiated to the region E of the substrate 11 which is the object of evaluation of the solar cell 10, and the luminous intensity in the region e is measured, and the photoelectric conversion efficiency of the region E is evaluated from the measured value. However, for example, in the solar cell 10, when a structural defect A which causes partial short-circuiting of the upper electrode 丨5 and the lower electrode 丨3 is generated in the vicinity of the region E, if a part of the current generated at the time of light irradiation passes through the structural defect A' The photoelectric conversion efficiency in the area e will not be correctly evaluated. Further, in Fig. 14A and Fig. 14B, reference numeral 12 denotes a photoelectric conversion body, reference numeral 14 denotes a semiconductor layer, reference numeral 19 denotes a scribe line, and reference numeral 21 denotes a zoning element. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an evaluation method and an evaluation apparatus capable of highly accurately evaluating local photoelectric conversion efficiency in a desired region of a thin film solar cell. In order to solve the above problems, the present invention provides the following evaluation method and evaluation device for a solar cell. (1) The method for evaluating a solar cell of the present invention comprises the steps of: preparing a solar cell, comprising: a photoelectric conversion body, comprising: superposing on the substrate at least in the order of the first electrode layer, the semiconductor layer, and the second electrode layer; a plurality of zoning elements electrically connected; and a scribe line for removing the semiconductor layer and the second electrode layer in the photoelectric conversion body; and insulating the specific region from the peripheral region in the zoning element of the evaluation object (insulation step And illuminating the area of the specific region as described above (irradiation step); and measuring the current-voltage characteristics of the specific region at the time of light irradiation (measurement step). (2) In the method for evaluating a solar cell according to (1) above, when the specific region is insulated from the peripheral region (insulation step), the insulated wire is formed on the zoning element by removing at least the semiconductor layer and the second electrode layer. The area surrounded by the aforementioned insulated wire may be the aforementioned specific area. (3) In the method for evaluating a solar cell according to (1) above, when the specific region is insulated from the peripheral region (insulation step), the two insulated wires are respectively crossed by removing at least the semiconductor layer and the second electrode layer. Two adjacent scribe lines are formed on the zoning element to 'rise' into an insulated line across the two insulated wires, and the area surrounded by the scribe line and the three insulated lines may be the specific area. . In the solar cell evaluation device of the present invention, the solar cell includes: a photoelectric conversion body, which is disposed on the substrate and overlaps and is electrically connected at least in the order of the first electrode layer, the semiconductor layer, and the second electrode layer. And a plurality of zoning portions for sexually connecting; and a scribe line for removing the semiconductor layer and the first electrode layer in the photoelectric conversion body; wherein the solar cell evaluation device is provided in the zoning element of the measurement target An insulating portion that is insulated from the peripheral region by a specific region; an irradiated portion that irradiates light to a region including the specific region that is insulated; and a measuring portion that measures current-voltage characteristics of the specific region when the light is irradiated. (5) The solar cell evaluation device according to (4), wherein the insulating portion includes a t-light source, the irradiation portion includes a light source, and the measuring portion includes a probe for detecting a current or an electric induction, the laser light source and the light source, and The probes are independent and can be moved over the aforementioned zoning elements. According to the present invention, local photoelectric conversion efficiency can be evaluated with high precision in a desired region of a thin solar cell. [Embodiment] The embodiment of the evaluation method and evaluation device for a solar cell of the present invention will be described based on the drawings. Further, the present invention is more specifically understood to understand the gist of the invention, and unless otherwise specified, = is limited to the inventor. In addition, the drawings used in the following descriptions 4 are easy to understand. The features of the present invention are sometimes enlarged for the sake of convenience, and the dimensional ratios and the like of the respective constituent elements are not necessarily the same as the actual ones. <Evaluation Method of Solar Cell> An enlarged perspective view of an essential part of a thin film tantalum solar cell, which is evaluated by an embodiment of the evaluation method of the present invention. Figure 2A is a picture of
陽電池之層構成之要部之放大剖面圖。圖2B係顯示圖2A 之符號z所表示之部份之放大剖面圖。太陽電池1〇具有透 明絕緣性基板11 ^於基板丨丨之第一面丨la形成有光電轉換 體12。基板11例如係以玻璃或透明樹脂等太陽光之透射性 優良，且具有耐久性之絕緣材料形成。使太陽光s入射至 如此之基板11之第二面llb。 光電轉換體12令，於基板丨〗上依次積層有第一電極層 13(下部電極）、半導體層14、及第二電極層ι5(上部電 極）。第一電極層13係由透明導電材料，例如TC〇、 ITO(Indiiun Tin Oxide，銦錫氧化物）等光透性金屬氧化物 所形成。另，第二電極層15係由Ag、Cu等導電性金屬膜 形成。 半導體層14例如如圖2B所示，具有於p型矽膜17與11型矽 膜18間夾持有！型矽膜16ipin接合結構。而當太陽光入射 至该半導體層14時會產生電子與電洞，電子及電洞會因p 型矽膜17與n型矽膜18之電位差而活躍移動，在此連續重 複下而於第一電極層13與第二電極層15之間產生電位差 (光電轉換）。又，作為矽膜之材料，使用非晶質型、奈米 晶粒型等中之任一種材料。 光電轉換體12藉由劃刻線19被分割成例如外形為短條狀 之多數個區劃元件21、21…。該區劃元件21、21...互相被 電性區劃，且在互相鄰接之區劃元件21彼此間，例如電性 串聯連接。藉此，光電轉換體12具有將區劃元件21、2ι I50375.doc 201117309 全部電性串聯連接之結構， 僻 』取付向電位差之電流。劃刻 線1 9例如係於基板11之第—而n 弟 面11 a均一地形成光電轉換體 1 2後，利用雷射等於光雷鏟揸贼 寸、％电轉換體12上以特定間隔形成溝槽 而藉此形成。 又，在構成如此之光電轉換體12之第二電極層15上，較 佳進而形成含絕緣性樹脂等之保護層（未圖示）。 (絕緣步驟） 本發明之#估方法之__實施形態中，首先，於評估對象 之前述區劃元件中進行使特定區域與周邊區域絕緣而形成 絕緣區域之絕緣步驟。絕緣步驟例如如圖3A、圖3b所示 而進行。圖3 A、圖3B係例示絕緣步驟後之太陽電池之 圖’圖3A係頂視圖’圖3B係圖3A之I-Ι線之剖面圖。 即，藉由除去半導體層14及第二電極層15而形成二條絕緣 線R2及R3。各絕緣線R2及R3以跨過相鄰之二條劃刻線19a 及19b之方式而設。進而以跨過該等二條絕緣線以及们之 方式，藉由除去半導體層14及第二電極層15而形成一條絕 緣線R1。 絕緣線R2及R3在與劃刻線19a及19b正交之方向上延 伸。另’絕緣線R1在與絕緣線R2及R3正交之方向上延 伸。 絕緣線R1〜R3例如係藉由將雷射照射於太陽電池1〇上而 形成。使用同種雷射（相同波長之雷射）同時除去半導體層 14及第二電極層15 ’藉此可設置絕緣線R1〜R3。如此，於 絕緣步驟中’只除去半導體層14及第二電極層15二層，而 150375.doc 201117309 形成絕緣線R1〜仏如上述藉由另外設置絕緣線幻，而使 由一條劃刻線！ 9 a及三條絕緣線R1〜R 3所包圍之絕緣區域 D1 ’於區劃元件21a中確實與周緣區域(其他區域)絕緣。 又圖3A、圖3B中，符號B表示半導體層14與基板η接 觸之邛位符號C表示第一電極層13與第二電極層丨5連接 之部位。 另方面，說明不設置絕緣線R1，而將由二條劃刻線 19a及19b以及二條絕緣線112及113所包圍之區域（未圖示）形 成於區元件21 s上之情形。為使該區域於區劃元件21 s上 作為、、’邑緣區域而確實與周邊區域（其他區域）絕緣，需要藉 由除去第一電極層13、半導體層14及第二電極層15三層而 形成二條絕緣線R2及R3。若不設置絕緣線R1而僅除去半 導體層14及第二電極層丨5二層，則例如電流會經由位於絕 緣線下之第一電極層丨3而在其與相鄰區域間傳達。因此導 致絕緣不完全，無法獲得期望之絕緣區域。另一方面利 用雷射照射而除去三層時，需要使照射第一電極層丨3之種 類（波長）與照射半導體層14及第二電極層15之雷射之種類 (波長）不同。因此’隨著步驟數之增加而需要複雜之裝 置。 (照射步驟） 本發明之評估方法之一實施形態中，於前述絕緣步驟 後’進行對包含前述絕緣區域之區域照射光之照射步驟。 例如’圖3 A、圖3 B所示之太陽電池之情形中，照射光 之區域包含絕緣區域D1，亦可對位於絕緣區域D1外側之 150375.doc 201117309 區域照射光。光從太陽電池10之第二面1 lb照射β (測定步驟） 本發明之評估方法之一實施形態中’接著進行用以獲得 光照射時之前述絕緣區域之電流電壓特性之測定步驟。 例如’圖3Α、圖3Β所示之太陽電池之情形中，使探頭 接觸於絕緣區域以之第二電極層15，與鄰接於絕緣區域 D1之區域D2之第二電極層15(太陽電池1〇之與光照射.面相 反侧之面）^於區域D2與絕緣區域D1間形成有劃刻線19&。 第二電極層1 5係形成於與光所照射之第二面Ub相反之第工 面11a上方之層。在接觸於絕緣區域m之第二電極層15之 探頭與接觸於區域D2之第二電極層15之探頭間，測定電流 及電壓。藉此而獲得電流電壓特性。該測定步驟中，由於 絕緣區域D1確實與區劃元件21s之周邊區域絕緣，因此不 受周邊區域之影響。例如，周邊區域中產生之電流不會流 動於區域D1。因此，例如如圖3A所示，即使鄰接於絕緣 區域D1之前述區域D2或區域D3中存在結構缺陷a之情形 時，亦可高精度評估絕緣區域以之光電轉換效率^此處， 於區域D3與絕緣區域D1間形成有絕緣線R2。另，即使妗 構缺陷A存在於前述區域〇2或〇3外之區域之情形時，同2 亦可尚精度評估絕緣區域D丨之光電轉換效率。 ， <太陽電池之評估裝置> 本發明之評估裝置之一實施形態，係於前述評估步驟 中’具備：使敎對象之區劃元件之特定區域與周邊區域 絕緣而形成絕緣區域之絕緣部；冑包含前㈣緣區域之區 150375.doc 201117309 域照射光之照射部；及測定光照射時之前述絕緣區域之電 流電壓特性之測定部。 作為絕緣部，例如使用具備雷射光源之雷射照射裝置。 作為照射部，例如使用具備光源之光照射裝置。又，本說 3月書中’除非特別指定，否則「光源」係指「構成照射部 之光源」’與「構成絕緣部之雷射光源」有所區別。作為 測定部，例如使用具備複數個探頭之電流電壓測定器。 本發明之評估裝置之一實施形態中，前述雷射光源光 源及!木頭較佳為各自獨立，且構成為可在太陽電池之區劃 兀件上移動。為此，評估裝置較佳具備分別固定於前述雷 射光源、光源、及探頭之複數個第一固定部。複數個第— 固定㈣使前述雷射光源、光源、及探頭移動並配置於期 望之位置。另，評估裝置更佳具備與該等第一固定部電性 連接，且自動控制該等第一固定部之移動之電腦等之第一 控制部。又，評估裝置較佳具備固定供評估之太陽電池之 第二固定部。該第二固定部係使太陽電池移動較佳期望之 位置。再者，評估裝置又更佳具備與第二固定部電性連 接，且自動控制第二固定部之移動之電腦等之第二控制 * #。名’ 一控制部及第二控制部可一體化。 - 圖4係例示本發明之评估裝置之—實施形態之概要構成 圖。 圖4所示之評估襄置3具備：以使雷射光源與太陽電池ι〇 之基板Η對向之方式配置之雷射照射裝置31、以使光源與 太陽電池10之基板U對向之方式配置之光照射裝心、及 150375.doc -13· 201117309 使二個探頭330、330可與太陽電池1〇之第二電極層i5接觸 而配置之電流電壓測定器33β並且，雷射照射裝置”、光 照射裝置32、電流電壓測定器33及太陽電池ι〇各自固定於 上述第-固定部或第二固定部（省略圖示），可獨立於圖中 之X軸方向、Y軸方向及2軸方向之任一者上移動。再者， 本實施形態中’作為電流電壓測定器，係顯示具備二個一 體设有電壓探頭與電流探頭之探頭的測定器，但亦可使用 例如具備二個分開設有電壓探頭與電流探頭之探頭之所謂 四端子型電流電壓測m，本實施形態中，乃顯示具 備二個探頭之電流電壓測定器，但亦可使用具備2n(n表示 2以上之整數）個探頭之測定器。具有如此構成之測定器 中，可同時測定複數個絕緣區域之電流電壓特性，或以複 數個探頭同時對一個絕緣區域測定電流電壓特性。另光 照射裝置亦同，可使用具備一個光源之光照射裝置亦可 使用具備n(n表示2以上之整數）個光源之光照射裝置。 根據本發明，於區劃元件中設置與周邊絕緣之評估對象 之、邑、、彖區域，對包含該區域之區域照射光，從而可不受周 邊區域之影響而測定該絕緣區域之電流電壓特性，可局部 性尚精度評估光電轉換效率。 例如’在測定電流電壓特性之複數個絕緣區域中，若存 在具有光電轉換效率與其他絕緣區域大不相同之光電轉換 效率之絕緣區域’則可判斷該區域中存在結構缺陷。另一 方面’不應用本發明之評估方法的情形時，基於獲得之測 定結果’將無法正確判斷是否受結構缺陷之影響。 150375.doc 201117309 如此，纟4明率先提供—帛高精度評估與太陽電池之石夕 膜之面平订方向上之光電轉換效率之分佈狀態’且於產生 分佈之情形時可高精度特定該部位之裝置及方法。 (變形例） 接著，針對前述絕緣步驟之變形例進行說明。以下，與 上述實施形態相同之部位以同一符號表示。 上述絕緣步驟中’如圖3 A所示’於光電轉換體〖2中，將 藉由除去半導體層14及第二電極層15而形成之二條絕緣線 R2及R3，以各自分別跨過相鄰的二條劃刻線i9a及丨％之方 式設置，進而以跨過該等二條絕緣線以及们之方式，設 置藉由除去半導體層14及第二電極層15而形成之一條絕緣 線R1。然後，形成由一條劃刻線19a及三條絕緣線ri〜r3 所包圍之絕緣區域D1。 此處所說明之變形例中，如圖u所示，於光電轉換體^ 中，於相鄰之二條劃刻線19a及19b間，設置藉由除去半導 體層14及第二電極層丨5而形成之四條絕緣線R4〜R7，而形 成以該等絕緣線R4〜R7包圍之矩形狀之絕緣區域D4。 如此形成只以絕緣線包圍之絕緣區域的情形時，可排除 . 劃刻線之影響’而測定絕緣區域之電流電壓特性之分佈。 又，作為只以絕緣線包圍之區域之形態（形狀），例如可為 三角形狀、五角形狀、圓形狀等。 另，於絕緣步驟中，可根據狀況判斷是要形成不含劃刻 線之絕緣區域，或是形成含劃刻線之絕緣區域。 接著’圖12係顯示於絕緣步驟中，於形成於光電轉換體 150375.doc 15- 201117309 12之相鄰二條劃刻線19a及19b間，並列設置只以絕緣線包 圍之絕緣區域D5 ’及以劃刻線19b與三條絕緣線包圍之絕 緣區域D6之例。圖13A係顯示圖12之X-X線之剖面，圖13B 係顯示圖12之Y-Y線之剖面。 此例中，絕緣區域D5藉由四條絕緣線R8〜R1丨而形成矩 形狀。絕緣區域D6係藉由以下而形成：劃刻線19b ;跨過 劃刻線19b ’且從劃刻線19b朝向劃刻線19a延伸至區劃元 件21之大致中央區域之絕緣線in 2、R13 ;及以跨過互相 平行延伸之絕緣線R12、R13之方式，沿著劃刻線i9b延伸 之絕緣線R14。又，圖12中R15表示以跨過絕緣線r 12、 R13之方式沿著劃刻線19b延伸之絕緣線。該絕緣線R1 5以 由絕緣線R1 5與絕緣線R14夾持劃刻線19b之方式而配置。 另’圖12、圖13A、B中顯示探頭330。 如此，於光電轉換體12中，在將只以絕緣線包圍之絕緣 區域與以劃刻線及絕緣線包圍之絕緣區域並列設置的情形 時，藉由比較雙方之電流電壓特性，可測定因劃刻線影響 所引起之分佈。 (實施例） 以下，藉由具體實施例而更詳細說明本發明。惟本發明 不限於以下所示之實施例。 (實施例1、比較例1) 如圖5所示，準備具有複數個區劃元件（單元2、3 i、 60、91、及119)之太陽電池1〇，，不在各區劃元件（單元之、 31、60、91、及119)上設置絕緣線，對一個區劃元件之五 I50375.doc •16- 201117309 個部位（圖中以符號D|表示）以22mmx8.6_之照射面積照 射光。圖5係顯示所使用（準備）之太陽電池1〇，之頂視圖。 並且，使用本發明之評估裝置測定光照射時各區域之電流 電廢特性（比較例丨）。測定結果顯示於圖6。又，圖6係對^ 單兀2、3 1、60、91、及11 9測定四個部位之照射區域之電 流電壓特性之結果。 由圖6明顯所示，於相同區劃元件内（一個區劃元件 内）’照射區域間之電流電壓特性之偏差小。另，於任一 區劃區域中，其光電轉換效率都比對太陽電池ig，全體照射 光測定電流電壓特性時之光電轉換效率低。 接著，準備如上述測定電流電壓特性後之前述太陽電池 10’，將絕緣線R1〜R3形成於各區劃元件（單元）上。具體言 之，如圖7所示，與圖3之情形相同，於各區劃元件（單元） 上設置絕緣線R1〜R3，使成為評估對象之複數個特定區域 與周邊區域絕緣，而獲得形成有複數個絕緣區域之太陽 電池10。圖7係顯示設有絕緣線R1〜R3之太陽電池1〇之頂 視圖。其後，對包含絕緣區域D1之區域以22 mmx84爪爪 之照射面積照射光，且與比較例丨之情形同樣的，使用本 發明之評估裝置測定電流電壓特性（實施例丨）。將實施例丄 之測定結果顯示於圖8。再者，圖8係顯示各單元2、3 ι、 及119之二個部位之照射區域之電流電壓特性之測定結 果、顯示單元60之五個部位之照射區域之電流電壓特性之 測定結果，及顯示單元91之一個部位之照射區域之電流電 壓特性之測定結果。 150375.doc -17· 201117309 由圖8明顯所示’可確認於一個區劃元件（單元6〇)中， 其中一個絕緣區域D1之電流電壓特性與其他區域之電流電 壓特性大不相同。此表示該絕緣區域D1中存在結構缺陷。 提取單元60之實施例1及比較例1之結果，顯示於圖9。 又’圖9係顯示對實施例1及比較例1任一者都測定五個部 位之照射區域之電流電壓特性之結果。 另’圖10中，提取單元119之實施例1及比較例1之結果 而歸納該結果。又，圖1 〇係顯示對實施例1測定二個部位 之照射區域之電流電壓特性之結果，且顯示對比較例1測 定五個部位之照射區域之電流電壓特性之結果。 如基於圖8之說明，實施例1中’單元6 〇之其中一個絕緣 區域D1之電流電壓特性與其他絕緣區域D1之電流電壓特 性大不相同’可確認該絕緣區域Di中存在結構缺陷。又， 圖9中，在除去圖8所示之結構缺陷所存在之絕緣區域〇丨之 複數個絕緣區域D1之間，仍確認電流電壓特性有大幅偏 差°即，在圖9中以符號I表示之電流電壓特性群組中，確 W電電壓特性產生大幅偏差。另一方面，難以判斷圖9 中以符號Ρ表示之電流電壓特性群組，即由比較例1所測定 之電流電壓特性是否產生偏差。 因此’可明確確認圖9中，實施例1之電流電壓特性之偏 差大小’大於比較例1之電流電壓特性之偏差大小。即， 藉由應用本發明之評估方法，可明瞭電流電壓特性群皴工 中存在獲得良好電流電壓特性之絕緣區域D1，與獲得不佳 電/’IL電壓特性之絕緣區域D 1兩方（存在偏差）。認為電流電 150375.doc •18· 201117309 壓特性之偏差係表示膜質之偏差，即與太陽電池之面平行 之方向上產生膜質分佈。 另’圖ίο除不顯示表示結構缺陷存在之測定結果之點 外’表示獲得與圖9相同之結果。即，藉由應用本發明之 評估方法，可明瞭雖於單元119中不存在結構缺陷，但絕 緣區域D1中電流電壓特性有偏差。 另一方面，如圖6、9及10所示，由比較例j所測定之電 流電壓特性之偏差較小，另，各區劃元件之光電轉換效率 低於太陽電池10全體之光電轉換效率。此理由認為是電流 電壓特性受到存在於單元6〇中之結構缺陷之影響之結果二 在如此狀態下，如實施例丨所示，無法確認結構缺陷是否 存在或是否產生膜質分佈。 如上所述，應用本發明之評估方法，可高精度評估太陽 電池10之光電轉換效率，且可高精度特定結構缺陷之部 位。另一方面，比較例丨中’如上述由實施例i可特定之結 構缺陷會對照射區域全面帶來影響，其測定結果（電流電 壓特性）精度較低。 如上記載之本發明可於薄膜矽太陽電池之期望區.域中， 高精度評估局部之光電轉換效率。 【圖式簡單說明】 圖1係顯示利用本發明之評估方法之一實施形態而評估 之太陽電池之要部之放大立體圖； 圖2A係顯示利用本發明之評估方法之一實施形態而評估 之太陽電池之要部之放大剖面圖； 150375.doc -19- 201117309 圖2B係顯示圖2A之符號Z所表示之部位之放大剖面圖； 圖3 A係例示絕緣步驟後之太陽電池之圖，係太陽電池之 頂視圖； 圖3B係例示絕緣步驟後之太陽電池之圖，係圖3A之I · I線之剖面圖； 圖4係例示本發明之評估裝置之一實施形態之概要構成 圖； 圖5係顯示比較例1所使用之太陽電池之頂視圖； 圖6係顯示比較例1之電流電壓特性之測定結果之圖； 圖7係顯示實施例1使用之設有絕緣線之太陽電池之頂視 圖； 圖8係顯示實施例1之電流電壓特性之測定結果之圖； 圖9係選取顯示實施例1及比較例1之單元6〇之測定結果 之圖； 圖10係選取顯示實施例1及比較例1之單元119之測定結 果之圖； 圖11係例示變形例之絕緣步驟後之太陽電池之圖，係模 式化顯示太陽電池之頂視圖； 圖12係例示變形例之絕緣步驟後之太陽電池之圖，係模 式化顯示太陽電池之頂視圖； 圖13A係圖12之X-X線之剖面圖； 圖13B係圖12之Y-Y線之剖面圖； 圖14 A係用以說明利用先前方法之光電轉換效率之評估 方法之問題之概念圖，係薄膜矽太陽電池之頂視圖；及 150375.0. -20- 201117309 之評估 圖148係用以說明利用先前方法之光電轉換效率 【主要元件符號說明】 3 評估裝置 10 太陽電池 11 基板 11a 基板之一面 12 光電轉換體 13 第一電極層 14 半導體層 15 第一電極層 19(19a、19b) 劃刻線 21 區劃元件 31 雷射照射裝置 32 光照射裝置 33 電流電壓測定器 330 探頭 D1、D4、D5、D6 絕緣區域 R(R1~R5) 絕緣線 150375.doc 21An enlarged cross-sectional view of the main part of the layer structure of the anode battery. Fig. 2B is an enlarged cross-sectional view showing a portion indicated by a symbol z of Fig. 2A. The solar cell 1 has a transparent insulating substrate 11 and a photoelectric conversion body 12 is formed on the first surface 丨1a of the substrate. The substrate 11 is formed of an insulating material having excellent transparency such as glass or a transparent resin and having durability. The sunlight s is incident on the second surface 11b of the substrate 11 thus. The photoelectric conversion body 12 has a first electrode layer 13 (lower electrode), a semiconductor layer 14, and a second electrode layer ι5 (upper electrode) laminated in this order on the substrate. The first electrode layer 13 is formed of a transparent conductive material such as a phototransparent metal oxide such as TC〇 or ITO (Indiiun Tin Oxide). Further, the second electrode layer 15 is formed of a conductive metal film such as Ag or Cu. The semiconductor layer 14 is sandwiched between the p-type germanium film 17 and the 11-type germanium film 18 as shown, for example, in Fig. 2B! Type diaphragm 16ipin joint structure. When sunlight is incident on the semiconductor layer 14, electrons and holes are generated, and electrons and holes are actively moved by the potential difference between the p-type germanium film 17 and the n-type germanium film 18, and are continuously repeated first. A potential difference (photoelectric conversion) is generated between the electrode layer 13 and the second electrode layer 15. Further, as the material of the ruthenium film, any one of an amorphous type, a nanocrystalline type, and the like is used. The photoelectric conversion body 12 is divided by a scribe line 19 into, for example, a plurality of zoning elements 21, 21, ... having a short strip shape. The zoning elements 21, 21... are electrically scribed to each other and between the mutually adjacent zoning elements 21, for example electrically connected in series. Thereby, the photoelectric conversion body 12 has a structure in which the division elements 21, 2ι I50375.doc 201117309 are electrically connected in series, and the current of the potential difference is taken. The scribe line 1 9 is, for example, attached to the first portion of the substrate 11 - and the n-face 11 a uniformly forms the photoelectric conversion body 12, and is formed at a specific interval by using a laser equal to the light shovel shovel and the % electric conversion body 12. The groove is thereby formed. Further, on the second electrode layer 15 constituting the photoelectric conversion body 12, a protective layer (not shown) containing an insulating resin or the like is preferably formed. (Insulation step) In the embodiment of the present invention, first, an insulating step of insulating the specific region from the peripheral region to form an insulating region is performed in the zoning element to be evaluated. The insulating step is performed, for example, as shown in Figs. 3A and 3b. Fig. 3A and Fig. 3B are views showing a solar cell after the insulating step. Fig. 3A is a top view. Fig. 3B is a cross-sectional view taken along line I-Ι of Fig. 3A. That is, the two insulated wires R2 and R3 are formed by removing the semiconductor layer 14 and the second electrode layer 15. Each of the insulated wires R2 and R3 is provided so as to straddle the adjacent two scribe lines 19a and 19b. Further, an insulating line R1 is formed by removing the semiconductor layer 14 and the second electrode layer 15 across the two insulated wires. The insulated wires R2 and R3 extend in a direction orthogonal to the scribe lines 19a and 19b. Further, the insulated wire R1 extends in a direction orthogonal to the insulated wires R2 and R3. The insulated wires R1 to R3 are formed, for example, by irradiating a laser onto the solar cell. The same type of laser (laser of the same wavelength) is used to simultaneously remove the semiconductor layer 14 and the second electrode layer 15' by which the insulated wires R1 to R3 can be disposed. Thus, in the insulating step, only the second layer of the semiconductor layer 14 and the second electrode layer 15 are removed, and 150375.doc 201117309 forms the insulated wire R1~仏 as described above by additionally providing an insulating line illusion, thereby making a scribe line! The insulating region D1' surrounded by the 9a and the three insulated wires R1 to R3 is surely insulated from the peripheral region (other region) in the zoning element 21a. Further, in Fig. 3A and Fig. 3B, the symbol B indicates that the semiconductor symbol 14 is in contact with the substrate n, and the reference symbol C indicates a portion where the first electrode layer 13 and the second electrode layer 丨5 are connected. On the other hand, a case will be described in which the insulating line R1 is not provided, and a region (not shown) surrounded by the two scribe lines 19a and 19b and the two insulated wires 112 and 113 is formed on the area element 21 s. In order to insulate the region from the peripheral region (other region) as the "edge region" on the zoning element 21 s, it is necessary to remove the first electrode layer 13, the semiconductor layer 14, and the second electrode layer 15 by three layers. Two insulated wires R2 and R3 are formed. If only the insulating layer R1 is provided and only the second layer of the semiconductor layer 14 and the second electrode layer 丨5 are removed, for example, a current is transmitted between the adjacent region and the adjacent region via the first electrode layer 位于3 located under the insulating line. As a result, the insulation is incomplete and the desired insulating area cannot be obtained. On the other hand, when the three layers are removed by laser irradiation, it is necessary to make the type (wavelength) of the first electrode layer 丨3 irradiated different from the type (wavelength) of the laser light that irradiates the semiconductor layer 14 and the second electrode layer 15. Therefore, as the number of steps increases, complex devices are required. (Irradiation step) In one embodiment of the evaluation method of the present invention, the step of irradiating light to the region including the insulating region is performed after the insulating step. For example, in the case of the solar cell shown in Figs. 3A and 3B, the region where the light is irradiated includes the insulating region D1, and the region of 150375.doc 201117309 located outside the insulating region D1 may be irradiated with light. The light is irradiated from the second surface of the solar cell 10 by 1 lb (measurement step). In one embodiment of the evaluation method of the present invention, the measurement step of the current-voltage characteristic of the insulating region at the time of light irradiation is performed. For example, in the case of the solar cell shown in Fig. 3A and Fig. 3, the probe is brought into contact with the insulating region with the second electrode layer 15 and the second electrode layer 15 adjacent to the region D2 of the insulating region D1 (the solar cell 1〇) The surface opposite to the surface of the light is irradiated with a scribe line 19& between the region D2 and the insulating region D1. The second electrode layer 15 is formed on a layer above the first working surface 11a opposite to the second surface Ub to which the light is irradiated. The current and voltage were measured between the probe contacting the second electrode layer 15 of the insulating region m and the probe contacting the second electrode layer 15 of the region D2. Thereby, current and voltage characteristics are obtained. In this measuring step, since the insulating region D1 is surely insulated from the peripheral region of the zoning element 21s, it is not affected by the peripheral region. For example, the current generated in the peripheral area does not flow in the area D1. Therefore, for example, as shown in FIG. 3A, even if there is a structural defect a in the region D2 or the region D3 adjacent to the insulating region D1, the photoelectric conversion efficiency of the insulating region can be evaluated with high precision, here, in the region D3. An insulated wire R2 is formed between the insulating region D1. Further, even in the case where the structural defect A exists in the region outside the region 〇2 or 〇3, the photoelectric conversion efficiency of the insulating region D丨 can be accurately evaluated. <Evaluation Apparatus of Solar Cell> An embodiment of the evaluation apparatus of the present invention is characterized in that the evaluation step includes: an insulating portion that insulates a specific region of the zoning element of the ruthenium object from the peripheral region to form an insulating region;胄 includes a region of the front (four) edge region 150375.doc 201117309 a region irradiated with light, and a measuring portion for measuring a current-voltage characteristic of the insulating region at the time of light irradiation. As the insulating portion, for example, a laser irradiation device including a laser light source is used. As the irradiation unit, for example, a light irradiation device including a light source is used. In addition, in the March book, unless otherwise specified, the "light source" means "the light source constituting the illuminating unit" and the "laser source constituting the insulating portion". As the measuring unit, for example, a current-voltage measuring device including a plurality of probes is used. In one embodiment of the evaluation device of the present invention, the laser source and the wood are preferably independent of each other and configured to move over the compartment of the solar cell. To this end, the evaluation device preferably includes a plurality of first fixing portions respectively fixed to the laser light source, the light source, and the probe. The plurality of first-fixed (four) moves and arranges the aforementioned laser light source, light source, and probe at a desired position. Further, the evaluation device preferably includes a first control unit such as a computer or the like that is electrically connected to the first fixing portions and automatically controls the movement of the first fixing portions. Further, the evaluation device preferably has a second fixing portion for fixing the solar cell for evaluation. The second fixing portion moves the solar cell to a desired desired position. Furthermore, the evaluation device is further preferably provided with a second control that is electrically connected to the second fixed portion and automatically controls the movement of the second fixed portion. The name of a control unit and the second control unit can be integrated. - Fig. 4 is a schematic configuration diagram showing an embodiment of the evaluation apparatus of the present invention. The evaluation device 3 shown in FIG. 4 is provided with a laser irradiation device 31 arranged such that the laser light source and the substrate of the solar cell are opposed to each other so that the light source and the substrate U of the solar cell 10 face each other. The light irradiation core of the arrangement, and the current and voltage measuring device 33β configured to make the two probes 330, 330 contact the second electrode layer i5 of the solar cell 1 and the laser irradiation device" The light irradiation device 32, the current voltage measuring device 33, and the solar battery ι are each fixed to the first fixing portion or the second fixing portion (not shown), and can be independent of the X-axis direction, the Y-axis direction, and 2 in the drawing. In the present embodiment, the current measuring device is a measuring device having two probes in which a voltage probe and a current probe are integrally provided. However, for example, two measuring instruments may be used. The so-called four-terminal type current-voltage measurement m in which the probe of the voltage probe and the current probe are separately provided. In the present embodiment, the current-voltage measuring device having two probes is shown. However, it is also possible to use 2n (n means 2 or more. The measuring device of the probe. In the measuring device having the above configuration, the current-voltage characteristics of the plurality of insulating regions can be simultaneously measured, or the current-voltage characteristics of one insulating region can be simultaneously measured by a plurality of probes. A light irradiation device having n (n represents an integer of 2 or more) light sources may be used as the light irradiation device having one light source. According to the present invention, the 邑, 彖 region of the evaluation object insulated from the periphery is provided in the zoning element. The area including the region is irradiated with light, so that the current-voltage characteristics of the insulating region can be measured without being affected by the peripheral region, and the photoelectric conversion efficiency can be evaluated with locality accuracy. For example, in a plurality of insulating regions for measuring current-voltage characteristics If there is an insulating region having a photoelectric conversion efficiency that is different from other insulating regions, it is possible to judge that there is a structural defect in the region. On the other hand, when the evaluation method of the present invention is not applied, based on the obtained The measurement result 'will not be correctly judged whether it is affected by structural defects. 150375 .doc 201117309 In this way, 纟4 明 is the first to provide - 帛 high-precision evaluation and the distribution state of the photoelectric conversion efficiency in the direction of the flat surface of the solar cell, and the high-precision specific part of the position when the distribution is generated (Modification) Next, a modification of the insulating step will be described. Hereinafter, the same portions as those of the above-described embodiment are denoted by the same reference numerals. In the insulating step, 'as shown in Fig. 3A', the photoelectric conversion body In [2], the two insulated wires R2 and R3 formed by removing the semiconductor layer 14 and the second electrode layer 15 are respectively disposed across the adjacent two scribe lines i9a and 丨%, thereby further spanning One of the two insulated wires and the manner in which the insulating layer R1 is formed by removing the semiconductor layer 14 and the second electrode layer 15 is provided. Then, an insulating region D1 surrounded by one scribe line 19a and three insulated wires ri to r3 is formed. In the modification described here, as shown in FIG. u, in the photoelectric conversion body, a semiconductor layer 14 and a second electrode layer 丨5 are formed between the adjacent two scribe lines 19a and 19b. The four insulated wires R4 to R7 form a rectangular insulating region D4 surrounded by the insulated wires R4 to R7. When the insulating region surrounded only by the insulated wire is formed in this manner, the influence of the scribe line can be eliminated, and the distribution of the current-voltage characteristics of the insulating region can be measured. Further, the form (shape) of the region surrounded only by the insulated wire may be, for example, a triangular shape, a pentagonal shape, or a circular shape. Further, in the insulating step, it may be judged according to the condition that an insulating region containing no scribe line is formed, or an insulating region containing a scribe line is formed. Next, FIG. 12 is shown in the insulating step, and is formed between the adjacent two scribe lines 19a and 19b formed on the photoelectric conversion body 150375.doc 15-201117309 12, and the insulating regions D5 ′ surrounded only by the insulated wires are arranged side by side. An example of the insulating region D6 surrounded by the scribe line 19b and the three insulated wires. Fig. 13A is a cross section taken along line X-X of Fig. 12, and Fig. 13B is a cross section taken along line Y-Y of Fig. 12. In this example, the insulating region D5 is formed into a rectangular shape by four insulated wires R8 to R1. The insulating region D6 is formed by: a scribe line 19b; an insulated line in 2, R13 extending across the scribe line 19b' and extending from the scribe line 19b toward the scribe line 19a to a substantially central region of the zoning element 21; And an insulated wire R14 extending along the scribe line i9b so as to straddle the insulated wires R12 and R13 extending in parallel with each other. Further, R15 in Fig. 12 indicates an insulated wire extending along the scribe line 19b so as to straddle the insulated wires r12, R13. The insulated wire R1 5 is disposed such that the scribe line 19b is sandwiched between the insulated wire R1 5 and the insulated wire R14. The probe 330 is shown in Fig. 12, Fig. 13A, and B. As described above, in the case where the insulating region surrounded only by the insulated wire and the insulating region surrounded by the scribe line and the insulated wire are arranged in parallel, the photoelectric conversion body 12 can be measured by comparing the current-voltage characteristics of both sides. The distribution caused by the reticle influence. (Embodiment) Hereinafter, the present invention will be described in more detail by way of specific examples. However, the invention is not limited to the embodiments shown below. (Example 1 and Comparative Example 1) As shown in Fig. 5, a solar cell 1A having a plurality of zoning elements (units 2, 3i, 60, 91, and 119) is prepared, and is not in each zoning element (unit, 31, 60, 91, and 119) are provided with insulated wires, and the light is irradiated with an area of 22 mm x 8.6 mm for one of the division elements of the I50375.doc •16-201117309 parts (indicated by the symbol D| in the figure). Fig. 5 is a top view showing the solar cell used (prepared). Further, the current electric waste characteristics of each region at the time of light irradiation (Comparative Example) were measured using the evaluation device of the present invention. The measurement results are shown in Fig. 6. Further, Fig. 6 shows the results of measuring the current-voltage characteristics of the irradiation regions of the four portions for the 兀2, 3 1, 60, 91, and 119. As is apparent from Fig. 6, the variation in the current-voltage characteristics between the irradiation regions in the same zoning element (in one zoning element) is small. Further, in any of the divisional regions, the photoelectric conversion efficiency is lower than that of the solar cell ig, and the photoelectric conversion efficiency when measuring the current-voltage characteristics of the entire illumination light is low. Next, the solar cell 10' after measuring the current-voltage characteristics as described above is prepared, and the insulated wires R1 to R3 are formed on the respective zoning elements (cells). Specifically, as shown in FIG. 7, as in the case of FIG. 3, insulating wires R1 to R3 are provided on each of the division elements (units) so that a plurality of specific regions to be evaluated are insulated from the peripheral regions, and are formed. A plurality of solar cells 10 in an insulated region. Fig. 7 is a top view showing a solar cell 1A provided with insulated wires R1 to R3. Thereafter, the region including the insulating region D1 was irradiated with light at an irradiation area of 22 mm x 84 claws, and the current-voltage characteristics were measured using the evaluation device of the present invention in the same manner as in the comparative example (Example 丨). The measurement results of Example 显示 are shown in Fig. 8 . Further, FIG. 8 shows measurement results of current-voltage characteristics of the irradiation regions of the two portions of the respective units 2, 3, and 119, and measurement results of current-voltage characteristics of the irradiation regions of the five portions of the display unit 60, and The measurement result of the current-voltage characteristics of the irradiation region of one portion of the display unit 91. 150375.doc -17· 201117309 As apparent from Fig. 8, it can be confirmed that in one zoning element (cell 6 〇), the current-voltage characteristic of one insulating region D1 is greatly different from the current-voltage characteristic of other regions. This indicates that there is a structural defect in the insulating region D1. The results of Example 1 and Comparative Example 1 of the extraction unit 60 are shown in FIG. Further, Fig. 9 shows the results of measuring the current-voltage characteristics of the irradiation regions of the five portions in either of the first embodiment and the comparative example 1. In Fig. 10, the results of Example 1 and Comparative Example 1 of the extraction unit 119 are summarized and the results are summarized. Further, Fig. 1 shows the results of measuring the current-voltage characteristics of the irradiation regions of the two portions in the first embodiment, and shows the results of measuring the current-voltage characteristics of the irradiation regions of the five portions in Comparative Example 1. As described based on Fig. 8, the current-voltage characteristics of one of the insulating regions D1 of the unit 6 实施 in the first embodiment are greatly different from those of the other insulating regions D1. It can be confirmed that there is a structural defect in the insulating region Di. Further, in Fig. 9, between the plurality of insulating regions D1 in which the insulating region 存在 existing in the structural defect shown in Fig. 8 is removed, it is confirmed that the current-voltage characteristics largely deviate. That is, the symbol I is shown in Fig. 9. In the current-voltage characteristic group, it is confirmed that the W-voltage characteristic is largely deviated. On the other hand, it is difficult to judge whether or not the current-voltage characteristic group indicated by the symbol Ρ in Fig. 9 is a deviation of the current-voltage characteristics measured in Comparative Example 1. Therefore, it can be clearly confirmed that the magnitude of the deviation of the current-voltage characteristics of the first embodiment in Fig. 9 is larger than the magnitude of the variation of the current-voltage characteristics of the comparative example 1. That is, by applying the evaluation method of the present invention, it is understood that there is an insulating region D1 in which a good current-voltage characteristic is obtained in the current-voltage characteristic group completion, and an insulating region D1 in which a poor electric/'IL voltage characteristic is obtained (existing deviation). It is considered that the current characteristic 150375.doc •18· 201117309 The deviation of the pressure characteristics indicates the deviation of the film quality, that is, the film distribution occurs in a direction parallel to the surface of the solar cell. The other figure shows that the same result as in Fig. 9 is obtained except that the measurement result indicating the existence of the structural defect is not displayed. That is, by applying the evaluation method of the present invention, it is understood that although there is no structural defect in the cell 119, the current-voltage characteristics in the insulating region D1 are deviated. On the other hand, as shown in Figs. 6, 9, and 10, the variation in the current-voltage characteristics measured by the comparative example j was small, and the photoelectric conversion efficiency of each of the zoning elements was lower than the photoelectric conversion efficiency of the entire solar cell 10. This reason is considered to be a result of the influence of the current-voltage characteristics on the structural defects existing in the cell 6〇. In this state, as shown in the embodiment, it is impossible to confirm the presence or absence of a structural defect. As described above, by applying the evaluation method of the present invention, the photoelectric conversion efficiency of the solar cell 10 can be evaluated with high precision, and the position of the specific structural defect can be accurately determined. On the other hand, in the comparative example, the structural defects which can be specified by the above-described example i have an influence on the entire irradiation region, and the measurement result (current voltage characteristic) is low in accuracy. The present invention as described above can evaluate the local photoelectric conversion efficiency with high precision in the desired region of the thin film germanium solar cell. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an enlarged perspective view showing an essential part of a solar cell evaluated by an embodiment of the evaluation method of the present invention; FIG. 2A is a view showing the sun evaluated by an embodiment of the evaluation method of the present invention. An enlarged sectional view of a main part of the battery; 150375.doc -19- 201117309 Fig. 2B is an enlarged sectional view showing a portion indicated by a symbol Z of Fig. 2A; Fig. 3A is a view showing a solar cell after the insulating step, which is a sun FIG. 3B is a view showing a solar cell after the insulating step, and is a cross-sectional view taken along line I-I of FIG. 3A; FIG. 4 is a schematic structural view showing an embodiment of the evaluation device of the present invention; The top view of the solar cell used in Comparative Example 1 is shown; FIG. 6 is a view showing the measurement results of the current-voltage characteristics of Comparative Example 1; and FIG. 7 is a top view showing the solar cell provided with the insulated wire used in Example 1. Fig. 8 is a view showing the measurement results of the current-voltage characteristics of the first embodiment; Fig. 9 is a view showing the measurement results of the cells 6〇 showing the first embodiment and the comparative example 1; Fig. 10 is a selection showing the display example 1. FIG. 11 is a view showing a solar cell after the insulating step of the modification, schematically showing a top view of the solar cell; FIG. 12 is a view showing the sun after the insulating step of the modification. Figure 13A is a cross-sectional view taken along line XX of Figure 12; Figure 13B is a cross-sectional view taken along line YY of Figure 12; Figure 14A is a view showing the photoelectric method using the prior method The conceptual diagram of the problem of the evaluation method of conversion efficiency is the top view of the thin film solar cell; and the evaluation diagram of 150375.0. -20- 201117309 is used to illustrate the photoelectric conversion efficiency using the previous method [main component symbol description] 3 evaluation Apparatus 10 Solar cell 11 Substrate 11a One side of substrate 12 Photoelectric conversion body 13 First electrode layer 14 Semiconductor layer 15 First electrode layer 19 (19a, 19b) Scribe line 21 Zoning element 31 Laser irradiation device 32 Light irradiation device 33 Current Voltage measuring device 330 Probe D1, D4, D5, D6 Insulation area R (R1~R5) Insulation line 150375.doc 21