201107235 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種奈米碳管結構及其製備方法，特別係一 種奈米碳管膜先驅、奈米碳管膜及其製備方法。 【先前技術】 [0002] 奈米碳管（Carbon Nanotube，CNT)係一種新型碳材料 ，1991年由曰本研究人員Ii jima在實驗室製備獲得（請 參見，Helical Microtubules of Graphitic Car-bon，Nature, V354，P56〜58 (1991 ))。奈米碳管 之特殊結構決定了其具有特殊性質，如高抗張強度及高 熱穩定性；隨著奈米碳管螺旋方式之變化，奈米碳管可 呈現出金屬性或半導體性等。由於奈米碳管具有理想之 一維結構及在力學、電學、熱學等領域優良性質，其在 材料科學、化學、物理學等交叉學科領域已展現出廣闊 應用前景，包括場發射平板顯示，電子器件，原子力顯 微鏡（Atomic Force Microscope, AFM)針尖，熱感測 器，光學感測器，筛檢程式等。 [0003] 先前技術多通過直接生長法或喷塗法獲得奈米碳管膜結 構，然而該種奈米碳管膜結構中之奈米碳管往往容易聚 集成團，導致奈米碳管膜厚度不均。奈米碳管在奈米碳 管結構中為無序排列，不利於充分發揮奈米碳管之性能 〇 [0004] 為克服上述問題，Baughman, Ray，H.等人2005於文獻 “Strong， Transparent, Multifunctional, Carbon Nanotube Sheets” Mei Zhang, Shaoli Fang, 098128588 表單編號A0101 第4頁/共26頁 0982049089-0 201107235201107235 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a carbon nanotube structure and a preparation method thereof, and particularly to a carbon nanotube film precursor, a carbon nanotube film, and a preparation method thereof. [Prior Art] [0002] Carbon Nanotube (CNT) is a new type of carbon material. It was prepared in 1991 by the researcher Ii jima (see, Helical Microtubules of Graphitic Car-bon, Nature). , V354, P56~58 (1991)). The special structure of the carbon nanotubes determines its special properties, such as high tensile strength and high thermal stability. With the change of the helical shape of the carbon nanotubes, the carbon nanotubes can exhibit metallic or semiconducting properties. Because carbon nanotubes have ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, heat, etc., they have shown broad application prospects in the fields of materials science, chemistry, physics and other interdisciplinary fields, including field emission flat panel display, electronics. Devices, Atomic Force Microscope (AFM) tips, thermal sensors, optical sensors, screening programs, etc. [0003] In the prior art, the carbon nanotube film structure is obtained by direct growth method or spray coating method. However, the carbon nanotubes in the carbon nanotube film structure tend to aggregate easily, resulting in the thickness of the carbon nanotube film. Uneven. The carbon nanotubes are disorderly arranged in the carbon nanotube structure, which is not conducive to the full play of the performance of the carbon nanotubes. [0004] To overcome the above problems, Baughman, Ray, H. et al. 2005 in the literature "Strong, Transparent , Multifunctional, Carbon Nanotube Sheets” Mei Zhang, Shaoli Fang, 098128588 Form No. A0101 Page 4 of 26 Page 0992049089-0 201107235
Anvar A. Zakhidov， Ray H. Baughman, etc.Science，Vol.309，P121 5-121 9(2005)中揭示 了 一種奈米碳管膜之製備方法。所述奈米碳管膜可從一 奈米碳管陣列中拉取製備。該奈米碳管陣列為一生長在 一基底上之奈米碳管陣列。所述奈米碳管膜之長度不限 。然而.，上述製備方法在製備過程中由於先前用於生長 奈米碳管陣列之基底一般為4英寸之圓形基底，使得上述 製備方法難以製得寬度一致之奈米碳管膜，而奈米碳管 膜之寬度不一致會影響該奈米碳管膜之應用範圍。 Ο [0005] [0006] Ο [0007] 098128588 【發明内容】 有鑒於此，實為必要提供一種具有一致寬度之奈米碳管 膜及其製備方法，及由該方法過程中所製得之奈米碳管 膜先驅。 一種奈米碳管膜，該奈米碳管膜包括複數擇優取向排列 之奈米碳管，並且所述複數奈米碳管通過凡德瓦爾力首 尾相連，其中，所述奈米碳管膜具有一致之寬度。 一種奈米碳管膜先驅，其包括：一基底、一形成於基底 表面之奈米碳管陣列及至少一奈米碳管膜，其中，該奈 米碳管陣列表面具有至少兩個相互平行且間隔之凹槽， 凹槽處奈米碳管陣列中奈米碳管之高度基本上小於等於 100微米；及至少一個奈米碳管膜，該奈米碳管膜與奈米 碳管陣列位於相鄰之兩個凹槽之間之部分相連，且具有 一致之寬度。 一種奈米碳管膜之製備方法，其包括以下步驟：提供一 奈米碳管陣列形成於一基底；處理所述奈米碳管陣列， 表單編號A0101 第5頁/共26頁 0982049089-0 [0008] 201107235 在奈米碳管陣列表面形成至少兩個相互平行且間隔設置 之凹槽，凹槽處奈米碳管陣列中奈米碳管之高度基本上 小於等於100微米；採用一拉伸工具選定位於複數凹槽之 間之奈米碳管陣列中之複數奈米碳管；採用該拉伸工具 沿基本平行於凹槽長度方向之方向拉抽所述選定之複數 奈米碳管，該複數奈米碳管沿遠離奈米碳管陣列之方向 首尾相連地被拉出形成複數奈米碳管膜。 [0009] 與先前技術相比，本發明提供之奈米碳管膜之製備方法 ，通過處理奈米碳管陣列，使奈米碳管陣列形成至少兩 個相互平行且間隔之凹槽。四槽處奈米碳管陣列中奈米 碳管之高度基本上小於等於100微米，從而使該部分奈米 碳管就無法參與後續之拉膜過程，進而製得一具有一致 寬度之奈米碳管膜。 【實施方式】 [0010] 為了對本發明作進一步之說明，舉以下具體實施例並配 合附圖詳細描述如下。 [0011] 請參閱圖1，本發明具體實施例提供一種奈米碳管膜之製 備方法。該製備方法包括下列步驟： [0012] 步驟S101，提供一奈米碳管陣列形成於一基底； [0013] 步驟S102，處理所述奈米碳管陣列，使該奈米碳管陣列 表面具有至少兩個相互平行且間隔設置之凹槽，凹槽處 奈米碳管陣列中奈米碳管之高度基本上小於等於100微米 [0014] 步驟S103，採用一拉伸工具選定位於複數凹槽之間之奈 098128588 表單編號A0101 第6頁/共26頁 0982049089-0 201107235 [0015] [0016] Ο ο [0017] 098128588 表單編號A0101 米碳管陣列中之複數奈米碳管；及 步驟S104，採用該拉伸工具沿基本平行於凹槽長度方向 之方向拉抽所述選定之旅數奈米後管，該複數奈米碳管 沿遠離奈米碳管陣列之方向首尾相連地被拉出形成複數 奈米碳管膜。 在步驟S101中，請參閱圖2 ’所述奈米碳管陣列10包括複 數大致沿其同一個生長方向排列之奈米碳管30。在這裡 還需要進一步說明的是，所述“大致”之意思係由於奈 米碳管30在生長過程中受各種因素之制約，如碳源氣氣 流之流動速度不一致，破源氣之泼度之不均句及催化劑 之不平整，不可能也不必使奈米碳管陣列10中之每根奈 米碳管30完全沿其生長方向排列，即每根奈米碳管3〇完 全平行。本實施例中所述奈米碳管陣列1〇為輕順排奈米 碳管陣列。所述超順排奈米碳管陣列中的奈米碳管可為 單壁奈米碳管、雙壁奈米碳管或多壁奈米破管。所述超 順排奈米碳管陣列為由複數彼此大致平行且垂直於基底 生長之奈米碳管形成之純奈米碳管陣列。本實施例中， 超順排奈米碳管陣列之製備方法採用化學氣相沈積法’ 如圖3所示，為生長所述超順排奈米衫陣列方法之流程 圖。所述生長超_奈《管_之方法包括以下步驟 步驟S2G1，提供—平整基底2Q。所述基底20可選用Ρ型 或N型碎基底，或制形成有氧化層&基^所述基底 20之形狀可以為圓形也可以為方形1可以為無規則之 任意形狀。本實施例優選地制直料4英寸之圓形石夕基 第7頁/共26頁 0982049089-0 201107235 底。 [0018] 步驟S202，在基底20表面均勻形成一催化劑層。該催化 劑層之製備可通過熱沈積法、電子束沈積法或濺射法實 現。所述催化劑層之材料可選用鐵（Fe)、鈷（Co)、 鎳（Ni)或其任意組合之合金之一，本實施例中採用鐵 為催化劑。 [0019] 步驟S203，將上述形成有催化劑層之基底20在700〜900 ° C之空氣中退火約30分鐘〜90分鐘。 [0020] 步驟S204，將處理過之基底20置於反應爐中，在保護氣 體環境下加熱到500〜740°C。然後通入碳源氣體反應約 5~30分鐘，生長得到超順排奈米碳管陣列，其高度為 200〜400微米。所述碳源氣可選用乙炔、乙烯、曱烷等碳 氫化合物。本實施例中所述碳源氣為乙炔，所述保護氣 體為氬氣，所得奈米碳管生長高度為200微米。 [0021] 通過上述控制生長條件，該超順排奈米碳管陣列中基本 不含有雜質，如無定型碳或殘留之催化劑金屬顆粒等。 該奈米碳管陣列中之奈米碳管彼此通過凡德瓦爾力緊密 接觸形成陣列。 [0022] 在步驟S102中，所述處理奈米碳管陣列10之方法可以採 用雷射處理，還可以採用其他方法，例如採用一工具刮 擦所述奈米碳管陣列10。本實施例中所述處理奈米碳管 陣列1 0之方法採用雷射處理方法。 [0023] 請參閱圖4，為採用雷射處理所述奈米碳管陣列1 0方法之 流程圖。所述採用雷射處理奈米碳管陣列10可通過固定 098128588 表單編號A0101 第8頁/共26頁 0982049089-0 201107235 [0024] [0025] [0026] Ο [0027] 〇 [0028] [0029] [0030] 奈米碳管陣列1 0，然後移動雷射裝置照射該奈米碳管陣 列10之方法，其具體包括以下步驟： S301，固定奈米碳管陣列10連同基底20。 S302，提供一可移動之雷射器。 所述雷射器包括固體雷射器、液體雷射器、氣體雷射器 或半導體雷射器。本實施例中，所述雷射器為二氧化碳 雷射器。所述雷射器之移動方法不限，可以適過外力移 動雷射器使其按照一定路徑移動。本實施例中，該二氧 化碳雷射器之雷射光束之照射路徑通過電腦程序控制， 將確定好奈米碳管陣列10中所需要形成之至少兩平行凹 槽之圖形及位置等資料輸入電腦程式中。 S303，移動該雷射器使雷射光束照射該奈米碳管陣列10 ，使奈米碳管陣列10中被雷射處理過之部分形成至少兩 個平行且間隔設置之凹槽。請參閱圖5及圓6，圖中僅示 出複數凹槽12中之任意兩相鄰凹槽12。 經過上述雷射處理，則得到至少兩個凹槽12，凹槽12處 奈米碳管之高度小於等於100微米。由於相鄰之兩個凹槽 12係相互平行，所以可以使奈米碳管陣列位於相鄰兩個 凹槽12之間之部分具有一致寬度。 奈米碳管陣列位於相鄰兩個凹槽12之間之部分之寬度可 由兩凹槽12之間之距離控制。本實施例中，所述奈米碳 管陣列位於相鄰兩個凹槽12之間之部分之寬度為1英寸。 所採用之雷射光束為波長為10 54奈米之紅光雷射光束或 098128588 表單編號Α0101 第9頁/共26頁 0982049089-0 201107235 波長為527奈米之綠光雷射光束。所述雷射光束之掃描速 度為50毫米/秒至150毫米/秒。所述雷射光束之功率密度 優選地為5xl07瓦/平方米至5xl09瓦/平方米。本實施例 中，採用波長為1 0 5 4奈米之紅外雷射光束，該紅外雷射 光束之掃描速度為100毫米/秒，功率密度為lxl〇8瓦/平 方米。 [0031] 雷射照射過程中，由於雷射光束所具有之高能量被奈米 碳管30吸收，產生之高溫將處於雷射照射路徑處之奈米 碳管全部或部分燒蝕，從而在奈米碳管陣列10中形成預 定深度及距離之至少兩凹槽12。雷射處理後奈米碳管之 高度會降低，當被雷射處理後之奈米碳管之高度小於100 微米時，則該部分奈米碳管就無法參與後續之拉膜過程 。即只要被雷射處理後之奈米碳管之高度小於100微米， 就可保證所製備之奈米碳管膜具有一致之寬度。但若要 所製備之奈米碳管膜不僅寬度一致，且奈米碳管膜中奈 米碳管之密度分佈均勻，則凹槽12處被處理後之奈米碳 管之高度不可太低，其應大於1微米。這是因為，在後續 之拉膜步驟中，只有凹槽12處之奈米碳管具有一定高度 才可保持對與其相鄰之且位於相鄰兩凹槽12之間之奈米 碳管之凡德瓦爾力之作用。因此在相鄰兩凹槽12之間之 奈米碳管之拉膜過程中，與凹槽12相鄰之且位於相鄰兩 凹槽12之間之奈米碳管之消耗速度同不與凹槽12相鄰之 且位於相鄰兩凹槽12之間之奈米碳管消耗速度相同，從 而保證所得之膜之寬度一致性及奈米碳管膜中奈米碳管 之均勻性。如果凹槽12處之奈米碳管高度太低，該凹槽 098128588 表單編號A0101 第10頁/共26頁 0982049089-0 201107235 1 2中奈米碳管對與其相鄰之位於相鄰兩凹槽丨2之間之奈 米碳官就會沒有凡德瓦爾力作用，與凹槽12相鄰之位於 相鄰兩凹槽12之間之奈来碳管之消耗速度將大於不與凹 槽12相鄰之位於兩凹槽12之間之奈米碳管消耗速度。如 此在拉膜過財使奈米料陣m Q巾消耗奈米碳管之邊 界線呈弧形，則使所製備之奈米碳管膜不僅寬度不—致 ，而且奈米碳管膜中奈米碳管之密度也不一致。因此， Ο [0032] 通過控制雷射之功率及掃描速度等參數以使雷射處理過 之凹槽12中之奈米碳管之高度範圍為^00微米。優選地 ，凹槽12中之奈米碳管之高度為5〇_1〇〇微米。本實施例 中，所述凹槽12中之奈米碳管之高度為1〇〇微米。 Ο [0033] 所述凹槽12之寬度優選的大於奈米碳管陣列1〇中奈米碳 管之尚度。這是因為，位於相鄰之兩凹槽12之間之奈米 碳管在拉膜過程中，位於凹槽12之另一側但不位於該相 鄰之兩凹槽12之間之奈米碳管有可能傾倒從而跨過凹槽 12參與到位於相鄰兩凹槽12之間芝奈米碳^之拉膜過程 中。這將會導致獲滅之奈米碳管膜之寬度不一致。本實 施例中’奈米碳管陣列中之奈米碳管之高度為2〇〇微来， 因此控制凹槽12之寬度為250微米。 可以理解，本技術方案中所採用之雷射處理奈米碳管陣 列10之製備方法還可以為固定雷射裝置，移動奈米破管 陣列使雷射照射該奈米碳管陣列之方法，其具體包括以 下步驟：提供一固定之雷射器’該雷射器在一固定區域 形成一雷射掃描區；使奈米碳管陣列10連同基底20以一 定之速度經過該雷射掃描區’使奈米碳管陣列10表面形 098128588 表單編號A0101 第11頁/共26頁 0982049089-0 201107235 成複數平行且間隔設置之凹槽12。 [0034] 在步驟S103中，請參閱圖7為拉抽位於相鄰兩凹槽12之間 之奈米碳管以獲得一奈米碳管膜之方法之流程圖。所述 拉抽位於相鄰兩凹槽1 2之間之奈米碳管以獲得一奈米碳 管膜之方法包括以下步驟： [0035] 步驟S401，選定位於相鄰兩凹槽12之間之奈米碳管沿凹 槽長度方向之一端之複數奈米碳管片段，優選地，該複 數奈米碳管片段之寬度等於兩相鄰凹槽12之間之距離。 由於本實施例中奈米碳管陣列生長於圓形基底之表面， f 因此，奈米碳管陣列1 0之形狀也為圓形。可以理解，奈 米碳管陣列10中被雷射處理過之部分形成至少兩個凹槽 12，奈米碳管陣列10位於相鄰兩個凹槽12之間之部分之 兩端均有呈弧形之邊緣。因此，選定之用於拉伸得到奈 米碳管膜之奈米碳管片段應該位於相鄰兩凹槽12之間之 奈米碳管之邊緣弧形部分結束之位置，即所選取之複數 奈米碳管片段之寬度等於兩平行凹槽12之間之距離。本 實施例中採用具有一定寬度之膠帶與兩凹槽12之間之奈 I1 米碳管相接觸以選定複數奈米碳管片段。 [0036] 當所採用之用於生長奈米碳管陣列10之基底20為方形時 ，採用雷射處理奈米碳管陣列10後，若所形成凹槽12平 行於方形基底20之兩個平行邊，則所形成之凹槽12之兩 端為一直線，且該直線垂直於凹槽12之長度方向。因此 ，相鄰兩凹槽12之任何位置均具有一致之寬度，此時可 以直接從相鄰兩凹槽12之間之奈米碳管30之端部選取複 數奈米碳管片段進行拉膜，該複數奈米碳管片段之寬度 098128588 表單編號A0101 第12頁/共26頁 0982049089-0 201107235 [0037] [0038] Ο ο 等於該相鄰兩凹槽12之間之距離。 步驟S402 ϋ速度拉伸該複數奈米碳管片段，以形 成一連續之具有一致寬度之奈米碳管膜。 請參關8，所述複數奈米碳管片段在拉力作用下沿遠離 奈米碳管陣mo之㈣方向逐漸顏基細，在未完全 脫離基底20時，此時形成奈米碳管膜先驅綱。該奈米碳 管膜先驅綱包括一基⑽及-形成於基底20表面之奈米 碳管陣列’其中，該奈米碳管陣列1〇表面具有至少兩個 相互平行且間隔之凹槽丨2，凹褚^處奈米碳管陣列中奈 米碳管之高度基本上小於等於1〇〇微米；及至少一個奈米 破管膜30G，該奈米碳管膜_與奈米碳管本列位於相鄰 之兩個凹槽12之間之部分相連，且具有一致之寬度。若 要通過該奈米碳管膜先驅2〇〇製備之奈米碳管膜3〇〇僅具 有-致寬度，則凹槽12中奈米碳管之高度可以為小於1〇〇 微米。若要通過該奈*碳管臈先驅2QG製,之奈米碳管膜 300不僅具有一致寬度而且還具有良好之均勻性，則凹槽 12 +奈米碳管之高度應小於1〇〇微米且大於丨微米。奈米 碳管陣列位於相鄰兩凹槽丨2之間之部分具有一致之寬度 ，所述奈米碳管膜300與奈米碳管陣列位於相鄰兩凹槽 12之間之部分沿長度方向相連，所述奈米碳管膜3 〇 〇具有 一致之寬度。 [0039] 本發明提供之奈米碳管膜3〇〇之先驅200中由於相鄰兩個 平行之凹槽12中之奈米碳管對位於相鄰兩凹槽12之間之 奈米碳管之凡德瓦爾力作用，使得拉膜過程中凹槽12處 及相鄰兩凹槽12之間處之奈米碳管之消耗速度一致，因 098128588 表單編號A0101 第13頁/共26頁 0982049089-0 201107235 此當拉取該相鄰兩凹槽12之間處之奈米碳管時，可製得 具有一致寬度及密度均勻之奈米碳管膜300。該奈米碳管 膜3 0 0包括複數擇優取向排列奈米碳管，所述複數奈米碳 管通過該相鄰奈米碳管之間之凡德瓦爾力首尾相連。該 奈米碳管膜300中奈米碳管之排列方向基本平行於奈米碳 管膜300之拉伸方向。 [0040] 與先前技術相比，本發明提供之奈米碳管膜300之製備方 法，通過處理奈米碳管陣列1 0，使奈米碳管陣列10形成 至少兩個相互平行且間隔之凹槽。凹槽處奈米碳管陣列 10中奈米碳管之高度基本上小於尊於100微米，從而使該 部分奈米碳管就無法參與後續之拉膜過程，進而製得一 具有一致寬度之奈米碳管膜300 » [0041] 另外，本領域技術人員還可在本發明精神内作其他變化 ，當然這些依據本發明精神所作之變化，都應包含在本 發明所要求保護之範圍内。 【圖式簡單說明】 [0042] 圖1係本發明實施例提供之奈米碳管膜之製備方法流程圖 〇 [0043] 圖2係本發明實施例提供之奈米碳管膜之製備方法所採用 的生長有奈米碳管陣列之基底。 [0044] 圖3為本發明實施例提供之奈米碳管膜之製備方法所採用 的生長超順排奈米碳管陣列之方法之流程圖。 [0045] 圖4為本發明實施例提供之奈米碳管膜之製備方法所採用 雷射處理奈米碳管陣列之方法之流程圖。 098128588 表單編號A0101 第14頁/共26頁 0982049089-0 201107235 [0046] 圖5係本發明實施例提供之奈米碳管膜之製備方法所採用 的具有凹槽之奈米碳管陣列之俯視圖。 [0047] [0048] [0049] 〇 圖6係本發明實施例提供之奈米碳管膜之製備方法所採用 的具有凹槽之奈米碳管陣列之主視圖。 圖7係本發明實施例提供之奈米碳管膜之製備方法所採用 的從奈米碳管陣列中拉取獲得奈米碳管膜之方法之流程 圖。 圖8係本發明具體實施例提供之奈米碳管膜之製備方法所 製備的奈米碳管膜之結構示意圖。 【主要元件符號說明】 [0050] 奈米碳管陣列 10 凹槽 12 基底 20 奈米碳管 30 奈米碳管膜先驅 200 奈米碳管膜 oU(J '· -' ' . 〇 098128588 表單編號A0101 第15頁/共26頁 0982049089-0An ink preparation method of a carbon nanotube film is disclosed in Anvar A. Zakhidov, Ray H. Baughman, etc. Science, Vol. 309, P121 5-121 9 (2005). The carbon nanotube film can be prepared by drawing from a carbon nanotube array. The carbon nanotube array is an array of carbon nanotubes grown on a substrate. The length of the carbon nanotube film is not limited. However, the above preparation method is difficult to produce a uniform carbon nanotube film by the above preparation method because the substrate used for the growth of the carbon nanotube array is generally a circular substrate of 4 inches in the preparation process, and the nanometer film is not uniform. Inconsistent widths of the carbon nanotube film affect the application range of the carbon nanotube film. [0007] [0006] [0007] 098128588 [Invention] In view of this, it is necessary to provide a carbon nanotube membrane having a uniform width and a preparation method thereof, and the naphthalene obtained by the method The carbon nanotube film pioneer. A carbon nanotube film comprising a plurality of preferred orientation aligned carbon nanotubes, and wherein the plurality of carbon nanotubes are connected end to end by van der Waals force, wherein the carbon nanotube film has Consistent width. A carbon nanotube film precursor comprising: a substrate, an array of carbon nanotubes formed on a surface of the substrate, and at least one carbon nanotube film, wherein the surface of the carbon nanotube array has at least two parallel and a groove, the height of the carbon nanotube in the carbon nanotube array at the groove is substantially less than or equal to 100 microns; and at least one carbon nanotube film, the carbon nanotube film and the carbon nanotube array are located The portion between the adjacent two grooves is connected and has a uniform width. A method for preparing a carbon nanotube film, comprising the steps of: providing a carbon nanotube array formed on a substrate; processing the carbon nanotube array, Form No. A0101, Page 5 of 26, 0982049089-0 [ 0008] 201107235 forming at least two mutually parallel and spaced grooves on the surface of the carbon nanotube array, the height of the carbon nanotubes in the carbon nanotube array at the groove is substantially less than or equal to 100 microns; using a stretching tool Selecting a plurality of carbon nanotubes in the array of carbon nanotubes between the plurality of grooves; drawing the selected plurality of carbon nanotubes in a direction substantially parallel to the length of the groove by the stretching tool, the plurality The carbon nanotubes are pulled out end to end in a direction away from the array of carbon nanotubes to form a plurality of carbon nanotube membranes. [0009] Compared with the prior art, the present invention provides a method for preparing a carbon nanotube film by forming a carbon nanotube array to form at least two mutually parallel and spaced grooves. The height of the carbon nanotubes in the four-slot carbon nanotube array is substantially less than or equal to 100 micrometers, so that the portion of the carbon nanotubes cannot participate in the subsequent film-drawing process, thereby producing a carbon nanotube having a uniform width. Tube membrane. [Embodiment] [0010] In order to further clarify the present invention, the following specific embodiments are described in detail below with reference to the accompanying drawings. [0011] Referring to FIG. 1, a specific embodiment of the present invention provides a method for preparing a carbon nanotube film. The preparation method includes the following steps: [0012] Step S101, providing a carbon nanotube array formed on a substrate; [0013] Step S102, processing the carbon nanotube array to have at least the surface of the carbon nanotube array Two mutually parallel and spaced grooves, wherein the height of the carbon nanotubes in the carbon nanotube array at the groove is substantially less than or equal to 100 micrometers [0014] Step S103, using a stretching tool selected between the plurality of grooves奈 098128588 Form No. A0101 Page 6 of 26 Page 0992049089-0 201107235 [0015] 00 00 [0017] 098128588 Form number A0101 multiple carbon nanotubes in the carbon nanotube array; and step S104, using the The drawing tool pulls the selected number of nanometers in a direction substantially parallel to the length direction of the groove, and the plurality of carbon nanotubes are pulled out end to end in a direction away from the array of carbon nanotubes to form a plurality of nana Carbon tube film. In step S101, referring to Fig. 2', the carbon nanotube array 10 includes a plurality of carbon nanotubes 30 arranged substantially in the same growth direction. It should be further noted here that the meaning of "substantially" is due to various factors that are restricted during the growth process of the carbon nanotubes 30, such as the inconsistent flow velocity of the carbon source gas stream, and the splash of the source gas. The unevenness of the sentence and the unevenness of the catalyst make it impossible or necessary to arrange each of the carbon nanotubes 30 in the carbon nanotube array 10 completely along its growth direction, that is, each of the carbon nanotubes 3 is completely parallel. In the present embodiment, the carbon nanotube array 1 is a lightly arranged carbon nanotube array. The carbon nanotubes in the super-sequential carbon nanotube array may be single-walled carbon nanotubes, double-walled carbon nanotubes or multi-walled nanotubes. The super-sequential carbon nanotube array is a pure carbon nanotube array formed of a plurality of carbon nanotubes that are substantially parallel to each other and perpendicular to the substrate. In the present embodiment, the preparation method of the super-sequential carbon nanotube array is carried out by chemical vapor deposition as shown in Fig. 3, which is a flow chart for growing the super-aligned nano-shirt array method. The method of growing the tube comprises the following step S2G1, providing - leveling the substrate 2Q. The substrate 20 may be formed of a Ρ-type or N-type ruthenium substrate, or an oxide layer may be formed. The substrate 20 may have a circular shape or a square shape 1 which may be irregular in any shape. This embodiment is preferably made of a straight 4-inch round stone base. Page 7 of 26 0982049089-0 201107235. [0018] Step S202, uniformly forming a catalyst layer on the surface of the substrate 20. The preparation of the catalyst layer can be carried out by a thermal deposition method, an electron beam deposition method or a sputtering method. The material of the catalyst layer may be one selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni) or any combination thereof. In the present embodiment, iron is used as a catalyst. [0019] Step S203, annealing the substrate 20 on which the catalyst layer is formed in an air of 700 to 900 ° C for about 30 minutes to 90 minutes. [0020] Step S204, the treated substrate 20 is placed in a reaction furnace and heated to 500 to 740 ° C in a protective gas atmosphere. Then, the carbon source gas is introduced for about 5 to 30 minutes to grow, and a super-aligned carbon nanotube array is grown to have a height of 200 to 400 μm. The carbon source gas may be selected from hydrocarbons such as acetylene, ethylene, and decane. In the present embodiment, the carbon source gas is acetylene, the shielding gas is argon gas, and the obtained carbon nanotubes have a growth height of 200 μm. [0021] By controlling the growth conditions described above, the super-sequential carbon nanotube array contains substantially no impurities such as amorphous carbon or residual catalyst metal particles. The carbon nanotubes in the array of carbon nanotubes are in close contact with each other to form an array by van der Waals force. [0022] In step S102, the method of processing the carbon nanotube array 10 may employ a laser treatment, and other methods such as scraping the carbon nanotube array 10 using a tool may be employed. The method of processing the carbon nanotube array 10 in the present embodiment employs a laser processing method. [0023] Please refer to FIG. 4, which is a flow chart of a method for processing the carbon nanotube array 10 by laser. The laser-processed carbon nanotube array 10 can be fixed by 098128588. Form number A0101 Page 8 of 26 page 0992049089-0 201107235 [0024] [0025] [0026] [0028] [0028] [0029] [0030] The carbon nanotube array 10, and then moving the laser device to illuminate the carbon nanotube array 10, specifically comprising the following steps: S301, fixing the carbon nanotube array 10 together with the substrate 20. S302, providing a movable laser. The laser comprises a solid laser, a liquid laser, a gas laser or a semiconductor laser. In this embodiment, the laser is a carbon dioxide laser. The method of moving the laser is not limited, and the laser can be moved by an external force to move according to a certain path. In this embodiment, the illumination path of the laser beam of the carbon dioxide laser is controlled by a computer program, and data such as the pattern and position of at least two parallel grooves formed in the carbon nanotube array 10 are determined and input into the computer program. in. S303, moving the laser to illuminate the carbon nanotube array 10 with the laser beam, so that the laser-treated portion of the carbon nanotube array 10 forms at least two parallel and spaced grooves. Referring to Figure 5 and circle 6, only any two adjacent grooves 12 of the plurality of grooves 12 are shown. After the above laser treatment, at least two grooves 12 are obtained, and the height of the carbon nanotubes at the grooves 12 is less than or equal to 100 μm. Since the adjacent two grooves 12 are parallel to each other, the portion of the carbon nanotube array located between the adjacent two grooves 12 can have a uniform width. The width of the portion of the carbon nanotube array located between adjacent two grooves 12 can be controlled by the distance between the two grooves 12. In this embodiment, the portion of the carbon nanotube array located between the adjacent two grooves 12 has a width of 1 inch. The laser beam used is a red laser beam with a wavelength of 10 54 nm or 098128588 Form No. 1010101 Page 9 of 26 0982049089-0 201107235 A green laser beam with a wavelength of 527 nm. The scanning speed of the laser beam is from 50 mm/sec to 150 mm/sec. The power density of the laser beam is preferably 5 x 107 watts per square meter to 5 x 109 watts per square meter. In this embodiment, an infrared laser beam having a wavelength of 105 nm is used, and the scanning speed of the infrared laser beam is 100 mm/sec, and the power density is lxl 〇 8 watt / square meter. [0031] During the laser irradiation, since the high energy of the laser beam is absorbed by the carbon nanotubes 30, the high temperature generated will ablate all or part of the carbon nanotubes at the laser irradiation path, thereby At least two grooves 12 of a predetermined depth and distance are formed in the carbon nanotube array 10. After the laser treatment, the height of the carbon nanotubes is lowered. When the height of the carbon nanotubes after laser treatment is less than 100 μm, the portion of the carbon nanotubes cannot participate in the subsequent film drawing process. That is, as long as the height of the carbon nanotubes after laser treatment is less than 100 micrometers, the prepared carbon nanotube film has a uniform width. However, if the prepared carbon nanotube film is not only uniform in width, and the density distribution of the carbon nanotubes in the carbon nanotube film is uniform, the height of the carbon nanotube after the treatment at the groove 12 is not too low. It should be greater than 1 micron. This is because, in the subsequent film drawing step, only the carbon nanotube at the groove 12 has a certain height to maintain the carbon nanotube between the adjacent two grooves 12 adjacent thereto. The role of Devalli. Therefore, during the film drawing process of the carbon nanotubes between the adjacent two grooves 12, the consumption speed of the carbon nanotubes adjacent to the groove 12 and located between the adjacent two grooves 12 is not concave. The carbon nanotubes adjacent to the groove 12 and located between the adjacent two grooves 12 consume the same speed, thereby ensuring the uniformity of the width of the obtained film and the uniformity of the carbon nanotubes in the carbon nanotube film. If the height of the carbon nanotube at the groove 12 is too low, the groove 098128588 Form No. A0101 Page 10 / Total 26 Page 0992049089-0 201107235 1 2 The carbon nanotube is adjacent to the adjacent two grooves The nanocarbon officer between 丨2 will have no van der Waals force, and the Nylon carbon tube between the adjacent two grooves 12 adjacent to the groove 12 will consume more speed than the groove 12 The carbon nanotube consumption rate between the two grooves 12 is adjacent. In this way, if the boundary line of the nano-carbon nanotubes consumed by the nano-film array is in an arc shape, the prepared carbon nanotube film is not only in a width, but also in the carbon nanotube film. The density of carbon nanotubes is also inconsistent. Therefore, [0032] the height of the carbon nanotubes in the laser-treated recess 12 is controlled to be ^00 μm by controlling parameters such as the power of the laser and the scanning speed. Preferably, the height of the carbon nanotubes in the recess 12 is 5 〇 1 〇〇 micrometers. In this embodiment, the height of the carbon nanotubes in the recess 12 is 1 〇〇 micrometer.宽度 [0033] The width of the groove 12 is preferably greater than the width of the carbon nanotubes in the carbon nanotube array 1 . This is because the carbon nanotubes located between the adjacent two grooves 12 are located on the other side of the groove 12 but not between the adjacent two grooves 12 during film drawing. It is possible for the tube to be poured so as to participate in the process of pulling the film between the adjacent two grooves 12 across the groove 12. This will result in inconsistent widths of the carbon nanotube membranes that are destroyed. In the present embodiment, the height of the carbon nanotubes in the carbon nanotube array is 2 〇〇, so that the width of the control groove 12 is 250 μm. It can be understood that the method for preparing the laser-processed carbon nanotube array 10 used in the technical solution can also be a fixed laser device, and the method of moving the nano-tube array to irradiate the laser to the carbon nanotube array is Specifically, the method includes the following steps: providing a fixed laser device that forms a laser scanning area in a fixed area; and passing the carbon nanotube array 10 along with the substrate 20 at a certain speed through the laser scanning area Carbon nanotube array 10 surface shape 098128588 Form No. A0101 Page 11 / 26 pages 0992049089-0 201107235 The plurality of grooves 12 are arranged in parallel and at intervals. [0034] In step S103, please refer to FIG. 7 is a flow chart of a method of drawing a carbon nanotube between adjacent two grooves 12 to obtain a carbon nanotube film. The method for drawing a carbon nanotube between adjacent two grooves 1 2 to obtain a carbon nanotube film comprises the following steps: [0035] Step S401, selecting between adjacent two grooves 12 The plurality of carbon nanotube segments of the carbon nanotubes along one end of the length of the groove, preferably, the width of the plurality of carbon nanotube segments is equal to the distance between the two adjacent grooves 12. Since the carbon nanotube array is grown on the surface of the circular substrate in this embodiment, f, the shape of the carbon nanotube array 10 is also circular. It can be understood that the laser-treated portion of the carbon nanotube array 10 forms at least two grooves 12, and the carbon nanotube array 10 has an arc at both ends of the portion between the adjacent two grooves 12. The edge of the shape. Therefore, the selected carbon nanotube segments for stretching to obtain the carbon nanotube film should be located at the end of the curved portion of the edge of the carbon nanotube between the adjacent two grooves 12, that is, the selected plurality of carbon nanotubes. The width of the carbon nanotube segments is equal to the distance between the two parallel grooves 12. In this embodiment, a tape having a certain width is used to contact the carbon nanotube between the two grooves 12 to select a plurality of carbon nanotube segments. [0036] When the substrate 20 for growing the carbon nanotube array 10 is square, after the laser treatment of the carbon nanotube array 10, if the groove 12 is formed parallel to the two parallel sides of the square substrate 20 At the edge, the two ends of the groove 12 formed are straight lines, and the straight line is perpendicular to the length direction of the groove 12. Therefore, any position of the adjacent two grooves 12 has a uniform width. In this case, a plurality of carbon nanotube segments can be directly drawn from the end portions of the carbon nanotubes 30 between the adjacent two grooves 12 to perform film drawing. The width of the plurality of carbon nanotube segments 098128588 Form No. A0101 Page 12/26 pages 0992049089-0 201107235 [0038] [0038] ο ο is equal to the distance between the adjacent two grooves 12. Step S402: The plurality of carbon nanotube segments are stretched at a speed to form a continuous carbon nanotube film having a uniform width. Please refer to Fig. 8, the plurality of carbon nanotube fragments are gradually thinned along the direction of (4) away from the carbon nanotube array mo, and the carbon nanotube film precursor is formed when the substrate 20 is not completely separated. Outline. The carbon nanotube film precursor comprises a base (10) and a carbon nanotube array formed on the surface of the substrate 20, wherein the surface of the carbon nanotube array has at least two mutually parallel and spaced grooves 丨2 The height of the carbon nanotubes in the nanotube array of the concave 褚^ is substantially less than or equal to 1 〇〇 micrometer; and at least one nanotube membrane 30G, the carbon nanotube membrane _ and the carbon nanotubes The portion between the adjacent two grooves 12 is connected and has a uniform width. If the carbon nanotube film 3 prepared by the carbon nanotube film precursor 2 has only a width, the height of the carbon nanotube in the groove 12 may be less than 1 μm. To pass the nanocarbon tube precursor 2QG system, the carbon nanotube film 300 not only has a uniform width but also has good uniformity, the height of the groove 12 + carbon nanotube should be less than 1 〇〇 micron and Greater than 丨 microns. The carbon nanotube array has a uniform width in a portion between the adjacent two grooves 丨2, and the portion of the carbon nanotube film 300 and the carbon nanotube array located between the adjacent two grooves 12 is along the length direction. Connected, the carbon nanotube film 3 〇〇 has a uniform width. [0039] In the precursor 200 of the carbon nanotube film provided by the present invention, the carbon nanotubes in the adjacent two parallel grooves 12 are located between the adjacent two grooves 12 of the carbon nanotubes. The van der Waals force acts to make the consumption speed of the carbon nanotubes at the groove 12 and between the adjacent two grooves 12 in the process of pulling the film uniform, since 098128588 Form No. A0101 Page 13 / Total 26 Page 0992049089- 0 201107235 When the carbon nanotubes between the adjacent two grooves 12 are pulled, a carbon nanotube film 300 having uniform width and uniform density can be obtained. The carbon nanotube film 300 includes a plurality of preferred orientation aligned carbon nanotubes, and the plurality of carbon nanotubes are connected end to end by a van der Waals force between the adjacent carbon nanotubes. The arrangement direction of the carbon nanotubes in the carbon nanotube film 300 is substantially parallel to the stretching direction of the carbon nanotube film 300. [0040] Compared with the prior art, the present invention provides a method for preparing a carbon nanotube film 300 by treating the carbon nanotube array 10 such that the carbon nanotube array 10 is formed into at least two parallel and spaced concaves. groove. The height of the carbon nanotubes in the carbon nanotube array 10 at the groove is substantially less than 100 micrometers, so that the portion of the carbon nanotubes cannot participate in the subsequent film-drawing process, thereby producing a uniform width. The carbon nanotube film 300 » [0041] Further, those skilled in the art can make other variations within the spirit of the invention, and it is to be understood that these changes in accordance with the spirit of the invention are included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0042] FIG. 1 is a flow chart of a method for preparing a carbon nanotube film according to an embodiment of the present invention. [0043] FIG. 2 is a method for preparing a carbon nanotube film according to an embodiment of the present invention. The substrate on which the carbon nanotube array is grown is used. 3 is a flow chart of a method for growing a super-sequential carbon nanotube array used in a method for preparing a carbon nanotube film according to an embodiment of the present invention. 4 is a flow chart of a method for processing a carbon nanotube array by using a method for preparing a carbon nanotube film according to an embodiment of the present invention. 098128588 Form No. A0101 Page 14 of 26 0982049089-0 201107235 [0046] FIG. 5 is a plan view of a grooved carbon nanotube array used in a method for preparing a carbon nanotube film according to an embodiment of the present invention. [0049] FIG. 6 is a front view of a grooved carbon nanotube array used in a method for preparing a carbon nanotube film according to an embodiment of the present invention. Fig. 7 is a flow chart showing a method for extracting a carbon nanotube film from a carbon nanotube array used in a method for preparing a carbon nanotube film according to an embodiment of the present invention. Fig. 8 is a schematic view showing the structure of a carbon nanotube film prepared by a method for preparing a carbon nanotube film according to a specific embodiment of the present invention. [Main component symbol description] [0050] Nano carbon tube array 10 Groove 12 Substrate 20 Carbon nanotube 30 Nano carbon tube membrane precursor 200 Nano carbon tube membrane oU(J '· -' ' . 〇098128588 Form number A0101 Page 15 of 26 0992049089-0